WO2024080684A1

WO2024080684A1 - Electroconductive contact pin

Info

Publication number: WO2024080684A1
Application number: PCT/KR2023/015477
Authority: WO
Inventors: 안범모; 박승호; 홍창희
Original assignee: (주)포인트엔지니어링
Priority date: 2022-10-11
Filing date: 2023-10-10
Publication date: 2024-04-18
Also published as: KR20240049950A

Abstract

The present invention provides an electroconductive contact pin that has a size that is clearly distinguishable from a surrounding structure and forms a diffused-reflection surface during vision inspection, allowing the location of a tip portion to be accurately recognized by a vision inspection device.

Description

electrically conductive contact pins

The present invention relates to electrically conductive contact pins.

Semiconductor devices are inspected using electrical connection devices such as probe cards, probe blocks, probe units, etc., which have a plurality of electrically conductive contact pins that are each pressed to electrodes of the semiconductor device. This type of electrical connection device is used to electrically connect the electrodes of a semiconductor element and a circuit board.

The electrically conductive contact pin is connected to the circuit board, and the tip portion of the electrically conductive contact pin is pressed against the electrode of the semiconductor element. When the tip is pressed against the electrode of the semiconductor device, an overdrive acts on the electrically conductive contact pin, and the electrically conductive contact pin is elastically deformed.

These electrically conductive contact pins are assembled in an electrical connection device such as a probe card, mounted on a tester, and then the tip side (or the alignment mark around the tip) of the electrically conductive contact pin is photographed by a vision inspection device such as an optical camera. By image processing the output signal of the vision inspection device, the position of the tip of the electrically conductive contact pin with respect to the electrode of the semiconductor element is obtained, and alignment is performed to determine the coordinate position.

However, since there is a flat surface around the tip of the electrically conductive contact pin that contacts the electrode of the semiconductor device, light is reflected when recognized using a vision device, making it difficult to accurately recognize the position of the tip through the vision device.

In order to prevent light reflection from such a flat surface, there are cases where scratches are formed on the flat surface or a coating layer is formed to prevent light reflection. However, there is a problem that the electrically conductive contact pin is bent in the process of forming a scratch or the manufacturing cost increases due to additional processes. Additionally, the technology for forming the coating layer also has the problem of increasing manufacturing costs due to additional processes. To solve this problem, a technology for forming irregularities on the upper surface where the tip is located was proposed (Registered Patent No. 10-0958070). During a vision inspection to check the alignment of the tip, light is incident perpendicularly to the upper surface of the electrically conductive contact pin. The incident light is not reflected perpendicularly to the upper surface due to the irregularities, but is reflected obliquely. Therefore, by preventing reflected light perpendicular to the upper surface, the position of the tip can be accurately recognized during vision inspection.

However, since the irregularities according to the prior art are formed by the pattern shape of the photoresist layer, it is difficult to form the depth and width of the irregularities and valleys to 1㎛ or less. Recently, due to the trend toward high integration of semiconductor devices, the pitch between electrically conductive contact pins must be further reduced and the size of the tip portion must also be formed smaller. The tip part, which has become smaller from a few ㎛ to tens of ㎛, is difficult to distinguish from the unevenness of a few ㎛ to tens of ㎛, making it increasingly difficult to confirm the location of the tip through vision inspection.

[Prior art literature]

[Patent Document]

(Patent Document 1) Registered Patent Gazette of Registered Patent No. 10-0958070

The present invention was developed to solve the problems of the prior art described above. The present invention is formed in a size that is clearly distinguishable from the surrounding structures and forms a diffuse reflection surface during vision inspection, so that the position of the tip can be accurately recognized by a vision inspection device. The purpose is to provide an electrically conductive contact pin that allows

In order to achieve the above-described object, an electrically conductive contact pin according to the present invention is an electrically conductive contact having a first side, a second side opposite the first side, and a side connecting the first side and the second side. In the pin, it includes a body part and a tip part, and a long groove is formed on a side of the body part in the direction of the first surface and the second surface, the depth of which is in the range of 20 nm to 1 ㎛, A nano trench having a width ranging from 20 nm to 1 μm is formed, and the tip portion is provided on the upper side of the body portion facing the inspection object among the side surfaces.

Additionally, the nano trench is formed on the entire side surface of the body portion.

Additionally, the nano trench is also formed on the side surface of the tip portion.

Additionally, the body portion may include a first body region provided in a thickness direction from the first surface to the second surface; and a second body region formed continuously with the first region in the thickness direction, wherein the tip portion is formed on the second body region.

Additionally, at least one of the first body region and the second body region is provided with a plurality of different metal layers stacked.

Additionally, the second body region is provided with a single metal layer.

Additionally, a nano-trench is provided on a side surface of the first body region, but a nano-trench is not provided on a side surface of the second body region.

Additionally, the tip portion makes surface contact with the plurality of dissimilar metal layers of the body portion.

Meanwhile, the electrically conductive contact pin according to the present invention is an electrically conductive contact pin having a first side, a second side opposite the first side, and a side connecting the first side and the second side, wherein the electrically conductive contact pin includes a circuit A body portion including a proximal end connected to a substrate, a beam portion extending from the proximal end and having a long hole extending in the width direction, and a tip portion formed at an end of the beam portion; and a tip portion that protrudes upward from a side of the tip portion and is formed to contact the inspection object, and has a cross-sectional area smaller than that of the body portion, wherein the first surface and the second surface are formed on a side of the beam portion in the direction of the tip portion. A nano trench is formed as a long groove in the plane direction, with a depth ranging from 20 nm to 1 ㎛ and a width ranging from 20 nm to 1 ㎛.

Additionally, the nano trench is also formed on the inner wall of the long hole of the beam part.

The present invention provides an electrically conductive contact pin that is formed in a size that is clearly distinguishable from surrounding structures and forms a diffuse reflection surface during vision inspection, allowing the position of the tip portion to be accurately recognized by a vision inspection device.

1 is a perspective view of an electrically conductive contact pin according to a first preferred embodiment of the present invention.

Figure 2 is an enlarged view of portion A of Figure 1.

Figure 3 is an enlarged view of part B of Figure 1.

4A to 6 are views showing a method of manufacturing an electrically conductive contact pin according to a first preferred embodiment of the present invention.

Figure 7 is a perspective view of an electrically conductive contact pin according to a second preferred embodiment of the present invention.

Figure 8 is an enlarged view of portion A of Figure 7.

Figure 9 is an enlarged view of part B of Figure 7.

10A to 10E are views showing a method of manufacturing an electrically conductive contact pin according to a second preferred embodiment of the present invention.

Figure 11 is a perspective view of an electrically conductive contact pin according to a third preferred embodiment of the present invention.

Figure 12 is an enlarged view of portion A of Figure 11.

Figure 13 is an enlarged view of part B of Figure 11.

14A to 17B are views showing a method of manufacturing an electrically conductive contact pin according to a third preferred embodiment of the present invention.

The following merely illustrates the principles of the invention. Therefore, those skilled in the art will be able to invent various devices that embody the principles of the invention and are included in the concept and scope of the invention, although not clearly described or shown herein. In addition, all conditional terms and embodiments listed in this specification are, in principle, expressly intended only for the purpose of ensuring that the inventive concept is understood, and should be understood as not limiting to the embodiments and conditions specifically listed as such. .

The above-mentioned purpose, features and advantages will become clearer through the following detailed description in relation to the attached drawings, and accordingly, those skilled in the art in the technical field to which the invention pertains will be able to easily implement the technical idea of the invention. .

Embodiments described herein will be explained with reference to cross-sectional views and/or perspective views, which are ideal illustrations of the present invention. The thicknesses of films and regions shown in these drawings are exaggerated for effective explanation of technical content. The form of the illustration may be modified depending on manufacturing technology and/or tolerance. Accordingly, embodiments of the present invention are not limited to the specific form shown, but also include changes in form produced according to the manufacturing process. Technical terms used in this specification are merely used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as “comprise” or “comprise” are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in this specification, but are intended to indicate the presence of one or more other It should be understood that this does not exclude in advance the possibility of the presence or addition of features, numbers, steps, operations, components, parts, or combinations thereof.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

The width direction of the electrically conductive contact pin 100 described below is the ±x direction shown in the drawing, the thickness direction of the electrically conductive contact pin 100 is the ±y direction shown in the drawing, and the electrically conductive contact pin 100 The height direction is the ±z direction indicated in the drawing.

제1실시예 Embodiment 1

FIG. 1 is a perspective view of an electrically conductive contact pin 100 according to a first preferred embodiment of the present invention, FIG. 2 is an enlarged view of portion A of FIG. 1, FIG. 3 is an enlarged view of portion B of FIG. 1, and FIG. 4A to 6 are diagrams showing a method of manufacturing the electrically conductive contact pin 100 according to the first preferred embodiment of the present invention.

The probe card includes electrically conductive contact pins (100). Testing the electrical properties of a semiconductor device is performed by approaching a semiconductor device as a test object to a probe card equipped with a plurality of electrically conductive contact pins 100 and contacting the electrically conductive contact pins 100 with corresponding electrodes on the semiconductor device. When the electrically conductive contact pin 100 and the electrode on the semiconductor element are brought into contact, after the two reach a state in which they begin to contact, a process of additionally accessing the semiconductor element to the probe card is performed. This processing is called overdrive. Overdrive is a process that elastically deforms the electrically conductive contact pins (100). By overdriving, even if there is a deviation in the height of the electrode or the height of the electrically conductive contact pins (100), all electrically conductive contact pins (100) are securely connected to the electrodes. It can be contacted easily. Additionally, during overdrive, the electrically conductive contact pin 100 is elastically deformed and its tip moves on the electrode, thereby causing scrubbing. This scrub removes the oxide film on the electrode surface and reduces contact resistance.

The electrically conductive contact pin 100 has a first surface (1), a second surface (2) opposite the first surface (1), and a side (3) connecting the first surface (1) and the second surface (2). ) is provided. The first surface (1) and the second surface (2) refer to two opposing surfaces in the thickness direction (±y direction), and the side surface (3) refers to the first surface (1) and the second surface (2). It is a surface formed by connecting and refers to all surfaces except the first surface (1) and the second surface (2).

The electrically conductive contact pin 100 may be a cantilever-type electrically conductive contact pin including a body portion 200 and a tip portion 300.

The body portion 200 includes a base end portion 210 connected to a circuit board, a beam portion 220 extending from the base end 210 and having a long hole 221 extending in the width direction (±x direction), and a beam portion. It includes a tip portion 230 formed at the end of 220.

During the overdrive process, the displacement of the tip portion 230 changes and the beam portion 220 is deformed, but the proximal end portion 110 has sufficient rigidity and is not deformed.

The beam portion 220 is provided with a long hole 221 extending in the width direction (±x direction) so that the distal end 230 can be displaced in the height direction (±z direction).

The body portion 200 is made of rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), cobalt (Co), nickel (Ni), manganese (Mn), tungsten (W), and phosphorus (Ph). , gold (Au), silver (Ag), copper (Cu) or their alloys, or palladium-cobalt (PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphorus (NiPh) alloy, nickel-manganese (NiMn) ), nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloy.

Meanwhile, in order to improve the electrical conductivity of the body portion 200, the body portion 200 is made of rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), cobalt (Co), and nickel (Ni). , manganese (Mn), tungsten (W), phosphorus (Ph) or their alloys, or palladium-cobalt (PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphorus (NiPh) alloy, nickel-manganese (NiMn) ), a first metal layer 101 selected from nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloy, and a second metal layer selected from gold (Au), silver (Ag), copper (Cu), or alloys thereof ( 102) may be formed by stacking a plurality of different metal layers. The first metal layer 101 is a metal with relatively high rigidity or wear resistance compared to the second metal layer 102, and the second metal layer 102 is a metal with relatively high electrical conductivity compared to the first metal layer 101.

When the body portion 200 is provided with first metal layers 101 and second metal layers 102 alternately stacked, the first metal layer 101 with high wear resistance is located on the surface side and the second metal layer with high electrical conductivity is located on the surface side. (102) is located between the first metal layers. The body portion 200 may be provided in a form in which the first metal layer 101, the second metal layer 102, and the first metal layer 101 are sequentially stacked, and the number of stacks is preferably three or more. For example, the body portion 200 may be provided by sequentially stacking a palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) alloy, or a palladium-cobalt (PdCo) alloy - copper (Cu) - Rhodium (Rd) may be sequentially stacked, or palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) - gold (Au) - palladium-cobalt (PdCo) The alloy may be sequentially stacked and provided.

The tip portion 300 is provided at the tip portion 230.

The tip portion 300 may be made of a different material from the body portion 200. The tip portion 300 may be made of a metal layer with higher wear resistance than the metal layer constituting the body portion 200. For example, if palladium-cobalt (PdCo) is selected from the first metal layer 101 for the body portion 200, rhodium (Rd) may be selected from the first metal layer 101 for the tip portion 300. Through this configuration, the wear resistance of the tip portion 300 can be increased than that of the body portion 200. Alternatively, the tip portion 300 may be made of a metal layer with higher electrical conductivity than the metal layer constituting the body portion 200. For example, if copper (Cu) is selected from the second metal layer 102 for the body portion 200, gold (Au) may be selected from the second metal layer 102 for the tip portion 300. Through this configuration, the electrical conductivity of the tip portion 300 can be made greater than that of the body portion 200.

The tip portion 300 protrudes upward from the side 3 of the distal end 230 and is formed to contact the inspection object. Here, the side 3 of the tip 230 may be the side directly facing the vision inspection device. The tip portion 300 has a cross-sectional area that is smaller than that of the tip portion 230. Through this, the removal efficiency of the oxide layer by the tip portion 300 can be improved.

The body portion 200 may be provided by stacking a plurality of different metal layers, and the tip portion 300 may be provided as a single metal layer. The tip portion 300 may be made of the same metal as the metal constituting the body portion 200 or may be a different metal. The body portion 200 may be formed to include a first metal layer 101 and a second metal layer 102, and the tip portion 300 may include any one of the first metal layer 101 and the second metal layer 102. can be formed. For example, the body portion 200 is provided by sequentially stacking a palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) alloy, and the tip portion 300 is a material selected from the body portion 200. It may be made of rhodium (Rd), a metal different from the first metal layer 101. Alternatively, the body portion 200 is provided by sequentially stacking a palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) alloy, and the tip portion 300 is a first metal layer selected from the body portion 200. It may be made of the same palladium-cobalt (PdCo) as (101).

The body portion 200 includes a plurality of nano trenches (NT) on its side surface (3). The body portion 200 may be formed by a mold 10 made of an anodized film material, as in the manufacturing method described later. The anodic oxide mold 10 includes numerous pores, and at least a portion of the anodic oxide mold 10 is etched to form an internal space, and a metal filler is formed into the inner space by electroplating, so that the body portion 200 The side surface 3 is provided with a nano trench (NT) that is formed while contacting the pores of the anodic oxide film mold 10. The nano trench NT is formed as a long groove dug in the thickness direction (±z direction) in the direction of the first surface 1 and the second surface 2 on the side surface 3 of the body portion 200.

The nano trench (NT) is formed by extending long along the thickness direction (±z direction) of the body portion 200 from the side surface 3 of the body portion 200, and the thickness direction (±z direction) is formed by the metal during electroplating. It refers to the direction in which the filling grows. The nano trench (NT) is formed as a long groove along the thickness direction (±z direction) of the body portion 200, and has several grooves aligned side by side along the side surface 3 of the body portion 200. (3) It is formed throughout.

The nano trench (NT) has a depth ranging from 20 nm to 1 μm, and its width also ranges from 20 nm to 1 μm. Here, since the nano trench (NT) is caused by a pore formed during the manufacture of the anodic oxide mold, the width and depth of the nano trench (NT) have values less than the range of the diameter of the pore of the anodic oxide mold (10). Meanwhile, in the process of forming an internal space in the anodic oxide mold 10, some of the pores of the anodic oxide mold 10 are crushed by the etching solution, forming a depth greater than the diameter of the pores formed during anodization. At least some branched nano trenches (NTs) may be formed.

The structure that makes up the exterior of the electrically conductive contact pin 100 is formed in a size exceeding 1㎛. Here, the structure constituting the exterior refers to a structure intentionally manufactured using general MEMS (Micro Electro Mechanical Systems) technology. Since the nano trench (NT) is formed in a size of 1㎛ or less, it has a size that is distinct from the structure that constitutes the exterior of the electrically conductive contact pin 100. Through this, even if light is irradiated to confirm the position of the tip portion 300 with a vision inspection device, there is no concern that the nano trench (NT) will be recognized as a structure.

Meanwhile, a vision inspection device such as an optical camera photographs an alignment mark (not shown) provided separately around the tip portion or tip portion 300, which is a structure, and image processes the output signal of the vision inspection device to form an electrically conductive contact pin (100). ), the position of the tip portion 300 is obtained, and position alignment is performed to determine its coordinate position. At this time, the nano trench (NT) forms a diffuse reflection surface when photographed with a vision inspection device, allowing the vision inspection device to accurately determine the position of the tip portion 300, which is a structure.

Meanwhile, looking at the process of joining the electrically conductive contact pin 100 to the land of the circuit board, a bonding material having conductivity and heat meltability, such as solder or conductive adhesive, is used to attach the base end 210 of the electrically conductive contact pin 100 or the circuit board. It is provided in the land of. The electrically conductive contact pin 100 is maintained in an upright position on the land of the circuit board, and then a laser beam having a spot diameter that is not irradiated to the neighboring electrically conductive contact pin 100 is applied to the electrically conductive contact pin 100. ) is irradiated to the base end 210 and the bonding material. By irradiation of the laser beam, the electrically conductive contact pin 100 and the bonding material absorb heat energy and the bonding material melts. Here, the nano trench (NT) provided on the side surface 3 of the body 200 improves the heat absorption rate of the body 200. Through this, since the body portion 200 is bonded to the molten bonding material while the temperature is raised, the cold soldering phenomenon can be reduced and bonding durability is improved.

In addition, the electrically conductive contact pin 100 provided with a nano trench (NT) on the side (3) has a greater resistance to the laser beam than the electrically conductive contact pin 100 that does not have a nano trench (NT) on the side (3). It is possible to lower the thermal energy even further. In the case of the electrically conductive contact pin 100 without a nano trench (NT), the laser beam has higher thermal energy than the electrically conductive contact pin 100 with a nano trench (NT) on the side (3). must be irradiated, and as a result, the heat energy absorbed by the bonding material bonding the neighboring electrically conductive contact pins 100 also increases, so that the neighboring bonding material softens or melts and the position of the tip portion of the electrically conductive contact pin 100 changes. Displacement problems arise. As a result, the coordinate position of the electrode of the semiconductor device corresponding to the coordinate position of the tip portion 300 does not match, so that the misaligned electrically conductive contact pin 100 cannot be used for testing the electrical characteristics of the semiconductor device unless it is re-bonded. do. On the other hand, since the electrically conductive contact pin 100 provided with a nano trench (NT) on the side 3 has a relatively high heat absorption rate, it is possible to irradiate a laser beam with lower thermal energy and Since it does not affect the bonding material, it does not cause a change in the coordinates of the tip portion 300 of the already bonded electrically conductive contact pin 100. Therefore, more effective bonding can be provided.

Hereinafter, a method of manufacturing the electrically conductive contact pin 100 according to the first preferred embodiment of the present invention will be described with reference to FIGS. 4A to 6.

The method of manufacturing the electrically conductive contact pin 100 includes forming an opening 11 in an anodic oxide film mold 10 having a lower seed layer 30 at the bottom; Forming a body portion 200 by electroplating the opening portion 11; Extracting the body portion 200; and attaching the separately manufactured tip portion 300 to the distal end 230 of the body portion 200.

First, referring to FIGS. 4A and 4B, an anodic oxide film mold 10 provided with an opening 11 is prepared. FIG. 4A is a plan view showing the anodic oxide film mold 10 provided with the opening 11, and FIG. 4B is a cross-sectional view taken along line A-A' of FIG. 4A.

In a preferred embodiment of the present invention, the anodic oxide film mold 10 is made of an anodic oxide film material. The anodic oxide film has a thermal expansion coefficient of 2~3ppm/℃. For this reason, when exposed to a high temperature environment, thermal deformation due to temperature is small. Therefore, even in a high-temperature environment for manufacturing metal molded products, a precise electrically conductive contact pin 100 can be manufactured without thermal deformation. In addition, by using the anodic oxide mold 10 made of an anodic oxide material, it is possible to demonstrate the effect of realizing precise shapes and fine shapes, which were limited in realizing them with molds made of photoresist. For the above reasons, the mold used in the manufacturing method of the electrically conductive contact pin 100 according to the first preferred embodiment of the present invention is the anodic oxide film mold 10.

An anodic oxide film refers to a film formed when a base metal is anodized, and a pore refers to a hole formed during the process of anodizing a base metal to form an anodize film. For example, when the base metal is aluminum (Al) or an aluminum alloy, when the base metal is anodized, an anodic oxide film of aluminum oxide (Al ₂ 0 ₃ ) is formed on the surface of the base metal. However, the base metal is not limited to this and includes Ta, Nb, Ti, Zr, Hf, Zn, W, Sb, or alloys thereof. The anodic oxide film formed as above is a barrier layer in which no pores are formed vertically. It is divided into a porous layer with pores formed inside. When the base metal is removed from a base metal on which an anodic oxide film having a barrier layer and a porous layer is formed on the surface, only an anodic oxide film made of aluminum oxide (Al ₂ 0 ₃ ) remains.

The opening 11 may be formed by wet etching the anodic oxide film mold 10. For this purpose, a photo resist is provided on the upper surface of the anodic oxide film mold 10 and patterned. Then, the anodic oxide film in the patterned open area reacts with an etching solution and is removed, thereby forming an opening 11.

A lower seed layer 30 is provided on the lower surface of the anodic oxide mold 10. The lower seed layer 30 may be provided on the lower surface of the anodic oxide film mold 10 before forming the opening 11 in the anodic oxide film mold 10. Meanwhile, a support substrate (not shown) is formed on the lower part of the anodic oxide mold 10 to improve the handling of the anodic oxide mold 10. Also, in this case, the lower seed layer 30 may be formed on the upper surface of the support substrate, and the anodic oxide mold 10 with the opening 11 may be coupled to the support substrate. The lower seed layer 30 may be made of copper (Cu) and may be formed by a deposition method.

The opening 11 is formed only in the portion corresponding to the body portion 200, and the opening 11 is not formed in the portion corresponding to the tip portion 300 so that the anodized film remains as is.

Next, a step is performed to form the body portion 200 by electroplating the opening portion 11. FIG. 5A is a plan view showing the body portion 200 formed by performing an electroplating process on the opening 11, and FIG. 5B is a cross-sectional view taken along line A-A' of FIG. 5A.

The body portion 200 is formed by plating a metal layer on the opening 11 using the lower seed layer 30.

The body portion 200 is made of rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), cobalt (Co), nickel (Ni), manganese (Mn), tungsten (W), and phosphorus (Ph). , gold (Au), silver (Ag), copper (Cu) or their alloys, or palladium-cobalt (PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphorus (NiPh) alloy, nickel-manganese (NiMn) ), nickel-cobalt (NiCo), or nickel-tungsten (NiW) alloy.

Meanwhile, in order to improve the electrical conductivity of the body portion 200, the body portion 200 is made of rhodium (Rd), platinum (Pt), iridium (Ir), palladium (Pd), cobalt (Co), and nickel (Ni). , manganese (Mn), tungsten (W), phosphorus (Ph) or their alloys, or palladium-cobalt (PdCo) alloy, palladium-nickel (PdNi) alloy or nickel-phosphorus (NiPh) alloy, nickel-manganese (NiMn) ), a first metal layer 101 selected from nickel-cobalt (NiCo) or nickel-tungsten (NiW) alloy, and a second metal layer selected from gold (Au), silver (Ag), copper (Cu), or alloys thereof ( 102) may be formed by stacking a plurality of different metal layers.

When the body portion 200 is provided with first metal layers 101 and second metal layers 102 alternately stacked, the first metal layer 101 with high wear resistance is located on the surface side and the second metal layer with high electrical conductivity is located on the surface side. (102) is located between the first metal layers. The body portion 200 may be provided in a form in which the first metal layer 101, the second metal layer 102, and the first metal layer 101 are sequentially stacked, and the number of stacks is preferably three or more. For example, the body portion 200 may be provided by stacking palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) alloy, or palladium-cobalt (PdCo) alloy - copper (Cu) ) - Rhodium (Rd) may be laminated, or palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) - gold (Au) - palladium-cobalt (PdCo) alloy may be laminated. It can be provided.

Next, the body portion 200 is completed by removing the anodic oxide film mold 10 and the lower seed layer 30.

Meanwhile, after the plating process is completed, the body portion 200 can be made more dense by raising the temperature to a high temperature and applying pressure to press the metal layer on which the plating process has been completed. When photoresist material is used as a mold, photoresist exists around the metal layer after the plating process is completed, so a process of raising the temperature to a high temperature and applying pressure cannot be performed. Unlike this, since an anodic oxide film mold 10 made of an anodized film material is provided around the metal layer for which the plating process has been completed, the electrically conductive contact pin (100) minimizes deformation due to the low thermal expansion coefficient of the anodized film even if the temperature is raised to a high temperature. ) It is possible to densify it. Therefore, it is possible to obtain a more dense electrically conductive contact pin 100 compared to the technology using photoresist as a mold.

Next, as shown in FIG. 6, the tip portion 300 is attached to the distal end 230 of the body portion 200. The separately formed tip portion 300 is attached to the side 3 of the tip portion 230 by brazing, soldering, welding, conductive epoxy, tacking, etc. The tip portion 300 is attached to the body portion 200 composed of the first and

second metal layers

101 and 102 by bonding to the second metal layer 102, which has relatively high electrical conductivity. Through this, the electric flow characteristics through the tip portion 300 are improved.

Second embodiment

Next, we will look at the second embodiment according to the present invention. However, the embodiments described below will be described focusing on characteristic components compared to the first embodiment, and descriptions of components that are the same or similar to the first embodiment will be omitted if possible.

Hereinafter, with reference to FIGS. 7 to 10E, the electrically conductive contact pin 100 according to the second preferred embodiment of the present invention will be described. Figure 7 is a perspective view of the electrically conductive contact pin 100 according to the second preferred embodiment of the present invention, Figure 8 is an enlarged view of part A of Figure 7, and Figure 9 is an enlarged view of part B of Figure 7. 10A to 10E are diagrams showing a method of manufacturing an electrically conductive contact pin 100 according to a second preferred embodiment of the present invention.

The electrically conductive contact pin 100 includes a body portion 200 and a tip portion 300.

The body portion 200 is divided into a first body region 250 and a second body region 260 in the thickness direction (±z direction). The body portion 200 is formed by sequentially stacking a first body region 250 and a second body region 260 in the thickness direction (±z direction) and integrally continuous with each other.

In the method of manufacturing the electrically conductive contact pin 100 described later, the first body region 250 is formed by a portion of the anodized film mold 10 and the second body region 260 is formed by a portion of the mold 20 of a patternable material. is formed by There is a difference between the first body region 250 and the second body region 260 in whether or not a nano trench (NT) is provided. That is, there is a difference between the first body region 250 and the second body region 260 in whether the nano trench NT is provided on the side surface 3. A nano trench NT is provided on the side surface 3 of the first body region 250, but the nano trench NT is not provided on the side surface 3 of the second body region 260.

The first body region 250 includes a plurality of nano trenches NT on its side surface 3. The nano trench (NT) is formed as a long groove along the thickness direction (±z direction) of the first body region 250, and has a plurality of vertical grooves in the thickness direction (±z direction) arranged side by side along the side 3. It is formed on the entire side 3 of the first body region 250 in this direction. Here, the thickness direction (±z direction) of the electrically conductive contact pin 100 refers to the direction in which the metal filler grows during electroplating.

The directionality of the electrically conductive contact pin 100 can be distinguished through the first body region 250 provided with the nano trench (NT) and the second body region 260 without the nano trench (NT). The electrically conductive contact pin 100 can be manufactured with a total thickness dimension within the range of 30㎛ or more and 60㎛ or less. Due to this small size, the first and second surfaces of the electrically conductive contact pin 100 It is not easy to distinguish between (2). However, the first surface 1 of the electrically conductive contact pin 100 is formed through the first body region 250 with the nano trench (NT) and the second body region 260 without the nano trench (NT). The second side (2) can be distinguished. For example, when the vision inspection device irradiates light to the side (3), the first body area 250 becomes a diffusely reflective surface, but the second body area 260 does not become a diffusely reflective surface, so it is classified into an electrically conductive contact pin ( 100) direction can be distinguished. Through this, it is possible to prevent the electrically conductive contact pin 100 from being bonded to the circuit board in the wrong direction.

The first body region 250 may be formed of a first metal layer 101 and a second metal layer 102. The first metal layer 101 is provided in the thickness direction (±z direction) of the electrically conductive contact pin 100, and the second metal layer 102 is provided between the first metal layers 101. For example, the first body region 250 is provided by alternately stacking the first metal layer 101, the second metal layer 102, and the first metal layer 101 in that order in the thickness direction (±z direction), The number of stacked layers may be three or more.

The second body region 260 may be formed of the third metal layer 103. The third metal layer 103 may be formed of the same metal as the first metal layer 101 or the second metal layer 102 constituting the first body region 250, or may be formed of a different metal. In the second preferred embodiment of the present invention, since the tip portion 300 is formed in the second body region 260, the second body region 260 is made of a metal with high wear resistance, and is made of a metal selected from the first metal layer 101. can be formed. For example, the third metal layer 103 may be rhodium (Rd).

Meanwhile, the second body region 260 may be provided by stacking a plurality of different metal layers. In this case, the third metal layer 103 includes a 3-1 metal layer (103-1) and a 3-2 metal layer (103-2). The 3-1 metal layer (103-1) is a metal layer with higher rigidity or wear resistance than the 3-2 metal layer (103-2), and the 3-2 metal layer (103-2) is a metal layer with higher rigidity or wear resistance than the 3-2 metal layer (103-2). ) is a metal layer with higher electrical conductivity than that of The 3-1 metal layer (103-1) with high wear resistance is located on the surface side, and the 3-2 metal layer (103-2) with high electrical conductivity is located between the 3-1 metal layers (103-1). The second body region 260 will be provided in the form of sequential stacking of the 3-1 metal layer (103-1), the 3-2 metal layer (103-2), and the 3-1 metal layer (103-1). It is preferable that the number of stacks is three or more. For example, the second body region 260 may be provided by sequentially stacking rhodium (Rd) - copper (Cu) - rhodium (Rd), or rhodium (Rd) - gold (Au) - rhodium (Rd). ) can be provided by being sequentially stacked.

The tip portion 300 is formed on the second body region 260. Since the tip portion 300 is formed integrally together in the process of forming the second body region 260, the nano trench (NT) does not exist on the side 3 of the tip portion 300 and forms the second body region 260. It is formed of the same metal layer as the metal layer. Therefore, if the second body region 260 is composed of a single metal layer, the tip portion 300 is also composed of a single metal layer, and if the second body region 260 is composed of a plurality of heterogeneous metal layers stacked, the tip portion 300 is also composed of a plurality of heterogeneous metal layers. It is constructed by stacking metal layers.

Compared to the tip portion 300 being formed of a single metal layer, the tip portion 300 including the 3-1 metal layer (103-1) and the 3-2 metal layer (103-2) has electrical conductivity and rigidity (or It can be advantageous in terms of wear resistance). Additionally, the tip portion 300 may be provided by stacking the 3-1 metal layer (103-1), the 3-2 metal layer (103-2), and the 3-1 metal layer (103-1) in that order. In this case, The metal layer with high electrical conductivity located inside is covered by a metal layer with high wear resistance, thereby improving the electrical conductivity and wear resistance of the tip portion 300 at the same time.

The second body region 260, excluding the tip portion 300, matches the shape of the first body region 250. That is, the first body region 250 and the second body region 260 have the same cross-sectional shape in the x-z plane except for the tip portion 300.

Hereinafter, a method of manufacturing the electrically conductive contact pin 100 according to the second preferred embodiment of the present invention will be described.

10A to 10E are diagrams for explaining a method of manufacturing the electrically conductive contact pin 100 according to a preferred embodiment of the present invention.

The manufacturing method of the electrically conductive contact pin 100 includes forming a lower seed layer 30 on the lower part of the anodic oxide film mold 10; Forming a patternable material (20) on the anodic oxide mold (10); Patterning the patternable material 20 to form a second opening 25 so that the upper part of the anodic oxide film mold 10 is exposed; Forming a first opening 15 by wet etching the anodic oxide film mold 10 to expose the lower seed layer 30 using the second opening 25; Forming a body metal layer 50 in the first opening 15 and the second opening 25 through a plating process; and extracting the body metal layer 50.

Referring to FIG. 10A, the step of forming the lower seed layer 30 on the lower part of the anodic oxide film mold 10 will be described. A detailed description of the anodic oxide film mold 10 has been described in the first embodiment and is therefore omitted below.

A lower seed layer 30 is provided on the lower surface of the anodic oxide mold 10. The lower seed layer 30 may be formed by depositing a metal material. The lower seed layer 30 is used when forming the body metal layer 50, particularly the first body region 250, using a plating process. The lower seed layer 30 may be formed on the entire lower surface of the anodized film mold 10.

An upper seed layer 40 is provided on the upper surface of the anodic oxide mold 10. The upper seed layer 40 may be formed by depositing a metal material. The upper seed layer 40 is used when forming the body metal layer 50, particularly the second body region 260, using a plating process. The upper seed layer 40 may be formed on the upper part of the anodic oxide film mold 10.

Since the lower seed layer 30 and the upper seed layer 40 are removed after forming the body metal layer 50, the lower seed layer 30 and the upper seed layer 30 are combined with the body metal layer 50. It is preferable that it is a metal of a different material.

Next, referring to FIG. 10b, forming a patternable material 20 on the top of the anodic oxide film mold 10 and patterning the patternable material 20 to expose the upper part of the anodic oxide film mold 10. The steps for forming the opening 25 will be described.

A patternable material 20 is formed on the anodic oxide mold 10 on which the upper seed layer 40 is formed. The patternable material 20 is made of a material capable of exposure and development processes and includes photoresist.

The patternable material 20 formed on the top of the anodic oxide film mold 10 is patterned to form a second opening 25 so that the top of the anodic oxide film mold 10 is exposed. As a result, a second mold of the patternable material 20 is provided on the anodic oxide film mold 10.

Next, referring to FIG. 10C, the step of forming the first opening 15 by wet etching the anodic oxide film mold 10 to expose the lower seed layer 30 using the second opening 25 will be described. .

Wet etching is performed using a solution that reacts only to the anodic oxide mold 10 using the upper seed layer 40 provided on the anodic oxide mold 10 and the patterned patternable material 20 as a mask. As the anodic oxide film mold 10 is selectively removed, a first opening 15 is formed in the anodic oxide film mold 10. Through this, the first mold of the anodic oxide film mold 10 in which the first opening 15 is formed is formed. That is, a second mold of the patternable material 20 is provided on the first mold of the anodic oxide film mold 10, and the first opening 15 and the second opening 25 communicate with each other to form one space.

The patterned patternable material 20 not only functions as a mold for plating but also functions as a mask for forming the first opening 15, so that in the area where the patternable material 20 functions as a mask, the thickness direction (± The first opening 15 and the second opening 25 are formed vertically in the y direction). Therefore, the first opening 15 is formed in the mold of the anodic oxide film mold 10 and the second opening 25 is formed in the mold of the patternable material 20, and then the anodic oxide film having the first opening 15 is formed. A misalignment problem that occurs when the mold of the mold 10 and the mold of the patternable material 20 provided with the second opening 25 are combined with each other is prevented.

Next, with reference to FIG. 10D, the step of forming the body metal layer 50 in the first opening 15 and the second opening 25 through a plating process will be described.

A body metal layer 50 is formed by forming a metal layer in the first opening 15 and the second opening 25 through a plating process.

A first plating process is performed within the first opening 15 using the lower seed layer 30. The plating layer formed in the first opening 15 constitutes the first body region 250. The first plating process may be a multi-layer plating process including a first metal layer 101 and a second metal layer 102. Accordingly, the first body region 250 may be composed of multiple metal layers including a first metal layer 101 and a second metal layer 102. Since the first body region 250 is a region manufactured using the first mold of the anodic oxide film mold 10, a nano trench (NT) is provided on its side.

Afterwards, a second plating process is performed on the second opening 25 using the already plated metal layer and the upper seed layer 40. The plating layer formed in the second opening 25 constitutes the second body region 260. Since the second body region 260 is a region manufactured using a second mold of the patternable material 20, a nano trench NT is not provided on its side.

The second plating process may consist of a single metal layer. The second plating process may be a single-layer plating process including the third metal layer 103. The material of the third metal layer 103 may vary depending on the function performed by the second body region 260. For example, when the second body region 260 requires wear resistance, mechanical rigidity, etc., the third metal layer 103 may be formed of a metal selected from the first metal layer 101. In contrast, when high electrical conductivity is required, the third metal layer 103 may be formed of a metal selected from the second metal layer 102. The third metal layer 103 may be formed of the same metal as the first metal layer 101 or the second metal layer 102 constituting the first body region 100b, or may be formed of a different metal. In the second preferred embodiment of the present invention, since the tip portion 300 is formed in the second body region 260, the second body region 100b is made of a metal with high wear resistance, and is made of a metal selected from the first metal layer 101. can be formed.

The upper seed layer 40 is used to improve the quality of the plating layer formed on the top and to shorten the plating time. In the case where the upper seed layer 40 is not present, it is difficult to form a long protruding length of the tip portion 300, and a polishing process is unnecessarily required. Therefore, by introducing the upper seed layer 40, it is possible to precisely form the shape of the protruding tip 188, and unnecessary polishing process can be prevented.

A first body region 250 is formed by plating a metal layer on the first opening 15 of the anodic oxide mold 10, and a metal layer is plated on the second opening 25 of the patternable material 20 to form a second body. Area 260 is formed. The first body region 250 and the second body region 260 are continuously and integrally formed in the thickness direction of the electrically conductive contact pin 100.

Next, with reference to FIG. 10E, the steps of removing the lower seed layer 30, the patternable material 20, and the anodizing film mold 10 and extracting the body metal layer 50 will be described.

The patternable material 20 is removed using a material that only reacts with the patternable material 20. Additionally, the lower seed layer 30 and the upper seed layer 40 are removed using a material that reacts only to the lower seed layer 30 and the upper seed layer 40. Additionally, the anodic oxide film mold 10 is removed using a material that reacts only with the anodized film mold 10. In this way, only the metal plated body metal layer 50 is extracted.

Meanwhile, in Figure 10e, three

metal layers

101, 102, and 101 are shown in the first body area 250, and one metal layer 103 is shown in the second body area 260, but the stacked metal layers The number is not limited to this, and various stacked structures are possible as described above. Both the first body region 250 and the second body region 260 may be provided by stacking a plurality of different metal layers.

When manufacturing the electrically conductive contact pin 100 using only photoresist, it is difficult to make the mold height sufficiently high using only a single layer of photoresist. As a result, the thickness of the electrically conductive contact pin 100 cannot be sufficiently thick. Considering electrical conductivity, resilience, and brittle fracture, the electrically conductive contact pin 100 needs to be manufactured to a predetermined thickness or more. In order to increase the thickness of the electrically conductive contact pin 100, a configuration of stacking photo resist in multiple stages may be considered. However, in this case, each layer of the photoresist sheet is slightly stepped, causing the problem that the side of the electrically conductive contact pin 100 is not formed vertically and a slightly stepped area remains. In addition, when photoresists are stacked in multiple stages, a problem arises in that it is difficult to precisely reproduce the shape of the electrically conductive contact pin 100 having a dimension range of several tens of μm or less.

Meanwhile, when manufacturing the electrically conductive contact pin 100 using the anodic oxide film mold 10 as a mold, there is an advantage in that it is possible to manufacture the electrically conductive contact pin 100 with a vertical side. However, since the anodic oxide film mold 10 is manufactured through an anodic oxidation process, it takes a lot of time to make its height sufficiently thick.

Therefore, if the anodic oxide film mold 10 and the patternable material 20 are used as a composite electroplating mold, it is not only possible to manufacture an electrically conductive contact pin 100 with a vertical side and excellent shape precision. It has the advantage of being able to make up for the insufficient height of the anodic oxide film mold 10 with the patternable material 20. In addition, when only the anodic oxide film mold 10 is used, it may be difficult to manufacture the electrically conductive contact pin 100 having a three-dimensional shape (e.g., tip portion 300) in the height direction. The mold of the anodic oxide film mold 10 By using a mold of a patternable material 20 in combination, it becomes easy to manufacture an electrically conductive contact pin 100 having a three-dimensional shape in the height direction.

A mold of the patternable material 20 is provided on top of the anodic oxide film mold 10. According to the configuration of positioning the mold of the patternable material 20 on the anodic oxide mold 10, during the planarization process (CMP) after the plating process is completed, the mold of the patternable material 20 is the mold of the anodic oxide mold 10. In that it protects, it can have the added effect of preventing cracks from occurring.

The anodic oxide mold 10 is used to manufacture the basic shape of the electrically conductive contact pin 100, and the mold of the patternable material 20 is used to manufacture a complex three-dimensional shape other than the basic shape or the height of the basic shape. It can be used to increase .

Third embodiment

Next, we will look at the third embodiment according to the present invention. However, the embodiments described below will be described focusing on characteristic components compared to the first embodiment, and descriptions of components that are the same or similar to the first embodiment will be omitted if possible.

Hereinafter, with reference to FIGS. 11 to 17B, the electrically conductive contact pin 100 according to a third preferred embodiment of the present invention will be described. Figure 11 is a perspective view of an electrically conductive contact pin 100 according to a third preferred embodiment of the present invention, Figure 12 is an enlarged view of part A of Figure 11, and Figure 13 is an enlarged view of part B of Figure 11. 14A to 17B are diagrams showing a method of manufacturing an electrically conductive contact pin 100 according to a third preferred embodiment of the present invention.

The body portion 200 of the third embodiment has the same configuration as that of the body portion 200 of the first embodiment. However, the tip portion 300 according to the first embodiment is manufactured in the anodic oxide film mold 10 used to manufacture the body portion 200, rather than being manufactured separately and then attached to the body portion 200 ( 300), there is a difference.

The tip portion 300 includes a connection portion 310 and a contact portion 320 and has a stepped shape.

The connection portion 310 is thicker in the thickness direction (±y direction) than the contact portion 320. The connection portion 310 has a thickness equal to that of the body portion 200, and the contact portion 320 has a thickness smaller than the thickness of the body portion 200.

The contact portion 320 of the tip portion 300 protrudes upward from the connection portion 310 and is formed to contact the inspection object. The contact portion 320 has a cross-sectional area that is smaller than that of the connection portion 310. Through this, the removal efficiency of the oxide layer by the tip portion 300 can be improved.

The tip portion 300 may have a stacked number that is smaller than the number of metal layers constituting the body portion 200 . More specifically, the tip portion 300 is composed of at least one metal layer. However, the number of metal layers constituting the tip portion 300 is not limited to this and may be one or more layers, but may be smaller than the number of metal layers constituting the body portion 200. When the tip portion 300 is composed of a plurality of metal layers, the tip portion 300 includes a first metal layer 101 and a second metal layer 102, and the first metal layer 101 and the second metal layer 102 are alternately formed. It can be provided in a stacked manner.

The tip portion 300 may be made of a different material from the body portion 200. The tip portion 300 may be made of a metal layer with higher wear resistance than the metal layer constituting the body portion 200. For example, if the first metal layer 101 of the body portion 200 is made of palladium-cobalt (PdCo) material, the tip portion 300 may be made of rhodium (Rd) material. Through this configuration, the wear resistance of the tip portion 300 can be improved.

The body portion 200 may be formed by stacking a plurality of different metal layers, and the tip portion 300 may be formed of a single metal layer. The tip portion 300 may be made of the same metal as the metal constituting the body portion 200 or may be a different metal. The body portion 200 may be formed to include a first metal layer 101 and a second metal layer 102, and the tip portion 300 may include any one of the first metal layer 101 and the second metal layer 102. can be formed. For example, the body portion 200 is provided by stacking a palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) alloy, and the tip portion 300 is a selected first layer of the body portion 200. It may be made of rhodium (Rd), a metal different from the metal layer 101. Alternatively, the body portion 200 is provided by stacking a palladium-cobalt (PdCo) alloy - copper (Cu) - palladium-cobalt (PdCo) alloy, and the tip portion 300 is a selected first metal layer 101 of the body portion 200. ) can be made of the same palladium-cobalt (PdCo).

Hereinafter, a method of manufacturing the electrically conductive contact pin 100 according to a third preferred embodiment of the present invention will be described with reference to FIGS. 14A to 17B.

The method of manufacturing the electrically conductive contact pin 100 includes forming a body opening 17 in an anodic oxide film mold 10 having a lower seed layer 30 at the bottom; Forming the body portion 200 by electroplating the body opening 17; Forming a tip opening (18) in the anodic oxide mold (10); forming a tip portion 300 by electroplating the tip opening 18; and extracting the electrically conductive contact pin 100.

First, referring to FIGS. 14A and 14B, an anodized film mold 10 provided with a body opening 17 is prepared. FIG. 14A is a plan view showing the anodic oxide film mold 10 provided with the body opening 17, and FIG. 14B is a cross-sectional view taken along line A-A' of FIG. 14A.

The body opening 17 may be formed by wet etching the anodized film mold 10. For this purpose, a photo resist is provided on the upper surface of the anodic oxide film mold 10 and patterned, and then the anodic oxide film in the patterned open area reacts with the etching solution to form the body opening 17.

A lower seed layer 30 is provided on the lower surface of the anodic oxide mold 10. The body opening 17 is formed only in the portion corresponding to the body portion 200, and the body opening 17 is not formed in the portion corresponding to the tip portion 300 and the anodized film remains as is.

Next, a step is performed to form the body portion 200 by electroplating the body opening 17. FIG. 15A is a plan view showing the body portion 200 formed by performing an electroplating process on the body opening 17, and FIG. 15B is a cross-sectional view taken along line A-A' of FIG. 15A.

The body portion 200 is formed by plating a metal layer on the body opening 17 using the lower seed layer 30.

A tip opening 18 is then formed. FIG. 16A is a plan view showing the tip opening 18 formed, and FIG. 16B is a cross-sectional view taken along line A-A' of FIG. 16A.

The tip opening 18 is formed adjacent to the already formed body portion 200 at a position that will become the tip portion 300. The tip opening 18 may be formed by wet etching the anodized film mold 10. For this purpose, a photo resist is provided on the upper surface of the anodic oxide film mold 10 and patterned, and then the anodic oxide film in the patterned open area reacts with the etching solution to form the tip opening 18.

Next, a step is performed to form a tip-corresponding metal layer 105 by electroplating the tip opening 18. FIG. 17A is a plan view showing the formation of the tip-corresponding metal layer 105 by performing an electroplating process on the tip opening 18, and FIG. 17B is a cross-sectional view taken along line A-A' of FIG. 17A.

In order to use the exposed side of the previously plated body portion 200 as a seed layer for electroplating, a patternable material (e.g., photoresist) is applied to the upper surface of the anodic oxide film mold 10, then exposed and developed, The upper surface of the previously plated body portion 200 is covered, but the side surface is exposed.

The tip-corresponding metal layer 105 is formed by electroplating using the lower CD layer 30 and the side surface of the previously plated body portion 200. As a result, the tip-corresponding metal layer 105 is formed in a stepped shape.

Next, the electrically conductive contact pin 100 is completed by removing the anodic oxide mold 10, the patternable material 20, and the lower seed layer 30.

In this way, since the tip portion 300 is manufactured using the anodic oxide film mold 20, a nano trench (NT) is formed on the side of the tip portion 300.

The electrically conductive contact pin 100 according to a preferred embodiment of the present invention described above is provided in an inspection device and is used to transmit an electrical signal by electrically and physically contacting an inspection object. The inspection device may be an inspection device used in a semiconductor manufacturing process, and an example may be a probe card. The electrically conductive contact pins 100 may be provided on a probe card to inspect a semiconductor chip. The inspection devices in which the electrically conductive contact pin 100 according to the preferred embodiment of the present invention can be used are not limited to this, and any inspection device that applies electricity to check whether the inspection object is defective is included. The inspection object of the inspection device may include a semiconductor device, a memory chip, a microprocessor chip, a logic chip, a light emitting device, or a combination thereof. For example, inspection objects include logic LSIs (such as ASICs, FPGAs, and ASSPs), microprocessors (such as CPUs and GPUs), memory (such as DRAM, hybrid memory cubes (HMCs), magnetic RAMs (MRAMs), and phase-processing memory (PCMs). Change Memory), ReRAM (Resistive RAM), FeRAM (ferroelectric RAM) and flash memory (NAND flash)), semiconductor light emitting devices (including LED, mini LED, micro LED, etc.), power devices, analog IC (DC-AC converter and (such as insulated gate bipolar transistors (IGBTs)), MEMS (such as acceleration sensors, pressure sensors, oscillators, and gyroscope sensors), wireless devices (such as GPS, FM, NFC, RFEM, MMIC, and WLAN), discrete devices, Includes BSI, CIS, camera module, CMOS, passive devices, GAW filter, RF filter, RF IPD, APE and BB.

As described above, although the present invention has been described with reference to preferred embodiments, those skilled in the art may modify the present invention in various ways without departing from the spirit and scope of the present invention as set forth in the following patent claims. Alternatively, it can be carried out in modification.

[Explanation of symbols]

100: electrically conductive contact pin

200: body part

210: Proximal end

220: Beam unit

300: Tip part

NT: nano trench

Claims

An electrically conductive contact pin having a first side, a second side opposite the first side, and a side connecting the first side and the second side,

Includes a body part and a tip part,

A long groove is formed on the side of the body portion in the direction of the first and second surfaces, the depth of which is in the range of 20 nm to 1 ㎛, and the width of which is in the range of 20 nm to 1 ㎛. A nano trench is formed,

The tip portion is provided on an upper side of the body portion facing the inspection object among the sides.
According to paragraph 1,

The nano trench is formed on the entire side of the body portion.
According to paragraph 1,

An electrically conductive contact pin, wherein the nano-trench is also formed on a side of the tip portion.
According to paragraph 1,

The body portion includes a first body region provided in a thickness direction from the first surface to the second surface; and a second body region formed continuously with the first region in the thickness direction,

An electrically conductive contact pin, wherein the tip portion is formed on the second body region.
According to paragraph 4,

An electrically conductive contact pin, wherein at least one of the first body region and the second body region is provided by stacking a plurality of dissimilar metal layers.
According to paragraph 4,

An electrically conductive contact pin, wherein the second body region is comprised of a single metal layer.
According to paragraph 4,

An electrically conductive contact pin, wherein a nano-trench is provided on a side surface of the first body region, but a nano-trench is not provided on a side surface of the second body region.
According to paragraph 1,

An electrically conductive contact pin, wherein the tip portion makes surface contact with a plurality of dissimilar metal layers of the body portion.
An electrically conductive contact pin having a first side, a second side opposite the first side, and a side connecting the first side and the second side,

A body portion including a proximal end connected to a circuit board, a beam portion extending from the proximal end and having a long hole extending in the width direction, and a tip portion formed at an end of the beam portion; and

A tip portion is formed to protrude upward from the side of the tip portion and is formed to contact the inspection object, and has a cross-sectional area smaller than that of the body portion,

On the side of the beam part in the direction of the tip, a long groove is formed in the direction of the first and second surfaces, the depth of which is in the range of 20 nm to 1 ㎛, and the width of which is 20 nm to 1 ㎛. An electrically conductive contact pin in which a nano-trench having a range of is formed.
According to clause 9,

The nano trench is formed on the inner wall of the long hole of the beam part.