WO2024078480A1 - 一种模块过压保护电路 - Google Patents

一种模块过压保护电路 Download PDF

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Publication number
WO2024078480A1
WO2024078480A1 PCT/CN2023/123705 CN2023123705W WO2024078480A1 WO 2024078480 A1 WO2024078480 A1 WO 2024078480A1 CN 2023123705 W CN2023123705 W CN 2023123705W WO 2024078480 A1 WO2024078480 A1 WO 2024078480A1
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WIPO (PCT)
Prior art keywords
circuit
diode
overvoltage protection
module
voltage
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PCT/CN2023/123705
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English (en)
French (fr)
Inventor
谢晔源
杨晨
段军
姜田贵
姚宏洋
殷冠贤
Original Assignee
南京南瑞继保电气有限公司
南京南瑞继保工程技术有限公司
常州博瑞电力自动化设备有限公司
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Application filed by 南京南瑞继保电气有限公司, 南京南瑞继保工程技术有限公司, 常州博瑞电力自动化设备有限公司 filed Critical 南京南瑞继保电气有限公司
Publication of WO2024078480A1 publication Critical patent/WO2024078480A1/zh

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

Definitions

  • the present application belongs to the technical field of high-voltage direct current transmission, and specifically relates to a module overvoltage protection circuit.
  • the failure rate of the system gradually increases with the module failure. Therefore, it is necessary to increase the redundant modules to improve the system reliability.
  • the faulty module can be bypassed to remove the faulty module.
  • bypassing the faulty module requires the board to be energized.
  • the board is not fully energized and the bypass operation cannot be performed. At this time, the voltage of the faulty module rises infinitely.
  • the turning thyristor can be broken down by overvoltage to complete the bypass.
  • the cost of the turning thyristor is high and it will also increase the size of the module.
  • the present application provides a module overvoltage protection circuit, which obtains the overvoltage protection basis directly from both sides of the capacitor in the branch where the transient voltage suppression diode is located, thereby realizing the overvoltage protection function.
  • a module overvoltage protection circuit of the present application includes:
  • a bridge structure module comprising a plurality of power devices and anti-parallel diodes of each of the power devices;
  • a DC energy storage capacitor, the DC energy storage capacitor is connected in parallel with the bridge structure module;
  • An overvoltage protection circuit wherein the overvoltage protection circuit is connected between the positive electrode of the DC energy storage capacitor and the gate of the power device;
  • the overvoltage protection circuit includes a plurality of groups of first transient voltage suppression diodes and first An isolation diode, wherein the cathode of the first transient voltage suppression diode is connected to the positive electrode of the DC energy storage capacitor; the anode of the first isolation diode is connected to the anode of the first transient voltage suppression diode, and the cathode of the first isolation diode is connected to the gate of the power device.
  • the bridge structure module is any one of a half-bridge structure, a full-bridge structure, or a hybrid structure formed by connecting a full-bridge and a half-bridge.
  • the bridge structure module is a half-bridge structure
  • the multiple power devices are connected in series and in parallel with the DC energy storage capacitor
  • the half-bridge structure includes a DC port and an AC port; wherein the DC port is formed between the positive and negative electrodes of the DC energy storage capacitor; and the AC port is formed between the midpoints of the half-bridge structure, or between the positive or negative electrodes of the DC energy storage capacitor.
  • At least one of the power devices connected in parallel with the AC port is a short-circuit protection device, and the remaining power devices are auxiliary devices.
  • the bridge structure module further includes:
  • a driving circuit wherein the driving circuit is connected in parallel with the short-circuit protection device and/or the auxiliary device;
  • a bypass switch is connected in parallel with the short-circuit protection device.
  • the overvoltage protection circuit further includes:
  • a voltage protection unit is connected to the first semiconductor switch.
  • the voltage protection unit includes an energy-taking circuit, a comparison circuit and a trigger circuit; the energy-taking circuit is connected to the DC energy storage capacitor, the comparison circuit is connected to the energy-taking circuit, and the trigger circuit is connected to the comparison circuit;
  • the energy extraction circuit includes at least two voltage-dividing resistors, an energy extraction diode, a DC capacitor and a voltage regulator connected in series; the voltage-dividing resistor is connected in parallel with the DC energy storage capacitor, the middle point of the voltage-dividing resistor is connected to the anode of the energy extraction diode, and the DC capacitor and the voltage regulator are connected in parallel to the cathode of the energy extraction diode;
  • the comparison circuit includes a comparator and an RC filter circuit connected in series; the positive terminal of the comparator The negative end of the comparator is connected to the cathode of the voltage regulator tube through the resistor voltage divider circuit;
  • the trigger circuit comprises a resistor push-pull circuit, and the resistor push-pull circuit is respectively connected to the output end of the comparator and the base of the first semiconductor switch.
  • the action voltage of the plurality of groups of first transient voltage suppression diodes connected in series is Vcp 1
  • the action voltage of the plurality of groups of second transient voltage suppression diodes connected in series is Vcp 2 , satisfying: Vcp 1 >Vcp 2 .
  • the module overvoltage protection circuit further includes:
  • a diode rectifier bridge wherein the AC end of the diode rectifier bridge is connected between the gate and the emitter of the short-circuit protection device;
  • a buffer energy storage capacitor is connected in parallel with the DC end of the diode rectifier bridge.
  • it also includes:
  • An active clamping circuit is connected between the collector and the gate of the auxiliary device; the active clamping circuit comprises a plurality of groups of third transient voltage suppression diodes connected in series, and the cathode of the third transient voltage suppression diode is connected to the collector of the auxiliary device.
  • the active clamping circuit further comprises:
  • a second isolation diode wherein an anode of the second isolation diode is connected to an anode of the fourth transient voltage suppression diode, and a cathode of the second isolation diode is connected to a gate of the auxiliary device;
  • a second semiconductor switch wherein the second semiconductor switch is connected in parallel with the fourth transient voltage suppression diode, and a base of the second semiconductor switch is connected to the driving circuit.
  • the action voltage of the plurality of sets of third transient voltage suppression diodes connected in series is Vcp 3
  • the action voltage of the plurality of sets of fourth transient voltage suppression diodes connected in series is Vcp 4 , satisfying: Vcp 3 >Vcp 4 .
  • the active clamping circuit further comprises:
  • a second isolation diode wherein an anode of the second isolation diode is connected to the fourth transient voltage suppression diode
  • the anode of the first isolation diode is connected to the gate of the auxiliary device, and the cathode of the second isolation diode is connected to the gate of the auxiliary device;
  • An energy extraction circuit comprising at least two voltage-dividing resistors, an energy extraction diode, a DC capacitor and a voltage-stabilizing diode connected in series; the voltage-dividing resistor is connected in parallel with the DC energy storage capacitor, the middle point of the voltage-dividing resistor is connected to the anode of the energy extraction diode, and the DC capacitor and the voltage-stabilizing diode are connected in parallel to the cathode of the energy extraction diode;
  • a comparison circuit comprising a comparator and an RC filter circuit connected in series; the positive end of the comparator is connected to the middle point of the voltage-dividing resistor through the RC filter circuit; the negative end of the comparator is connected to the cathode of the voltage-stabilizing tube through the resistor voltage-dividing circuit;
  • a trigger circuit comprising a resistor push-pull circuit, the resistor push-pull circuit being connected to an output terminal of the comparator;
  • the bootstrap circuit includes a bootstrap capacitor and a bootstrap diode connected in series, the base of the second semiconductor switch is respectively connected to the cathode of the bootstrap diode and the positive electrode of the bootstrap capacitor, the negative electrode of the bootstrap capacitor is connected to the emitter of the auxiliary device; the anode of the bootstrap diode is connected to the resistor push-pull circuit.
  • the module overvoltage protection circuit further includes:
  • a parallel circuit wherein the parallel circuit is composed of a resistor and a capacitor in parallel, and the parallel circuit is connected in series with the first isolation diode and/or the second isolation diode.
  • a module overvoltage protection circuit of the present application includes: a bridge structure module, the bridge structure module includes multiple power devices and anti-parallel diodes thereof; a DC energy storage capacitor, the DC energy storage capacitor is connected in parallel with the bridge structure module; an overvoltage protection circuit, the overvoltage protection circuit is connected between the positive electrode of the DC energy storage capacitor and the gate of the power device; wherein the overvoltage protection circuit includes multiple groups of first transient voltage suppression diodes and first isolation diodes connected in series, the cathode of the first transient voltage suppression diode is connected to the positive electrode of the DC energy storage capacitor; the anode of the first isolation diode is connected to the anode of the first transient voltage suppression diode, and the cathode of the first isolation diode is connected to the gate of the power device.
  • the present application triggers the opening of the short-circuit protection device after directly obtaining the overvoltage judgment basis from the DC energy storage capacitor, thereby realizing the module overvoltage protection function, and can reliably complete the overvoltage bypass of the power device without affecting the normal working state of the submodule itself.
  • the present application selects the protection trigger from the module capacitor voltage. It can improve the overvoltage protection refusal problem of power devices and reduce the risk of false operation without affecting the original working state of the circuit.
  • FIG1 is a schematic diagram of a module overvoltage protection circuit provided in an embodiment of the present application.
  • FIG2 is a schematic diagram of another module overvoltage protection circuit provided in an embodiment of the present application.
  • FIG3 is a schematic diagram of another module overvoltage protection circuit provided in an embodiment of the present application.
  • FIG4 is a schematic diagram of another module overvoltage protection circuit provided in an embodiment of the present application.
  • FIG5 is a schematic diagram of another module overvoltage protection circuit provided in an embodiment of the present application.
  • FIG. 6 is a flow chart of a module overvoltage protection circuit coordination method provided in an embodiment of the present application.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements.
  • the meaning of "multiple” is two or more, unless otherwise clearly and specifically defined.
  • first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more features.
  • the inventors found that the existing active clamping scheme is to conduct the pre-set power device by adding an active clamping branch when the module has an overvoltage problem, complete the self-destruction of the power device, and thus realize the bypass function of the module.
  • the problem with the existing scheme is that the transient voltage suppression diode (TVS) used in the active clamping branch will fluctuate within a certain range under factors such as the flow rate, temperature change, and discrete characteristics of device characteristics, so that the overvoltage value of the module to be protected has a large fluctuation range, so that when the sub-module needs to complete the self-destruction bypass, the voltage is not fixed, which brings difficulties to the design of TVS.
  • TVS transient voltage suppression diode
  • TVS voltage is too high, it is possible that the TVS branch will not operate, resulting in failure of the self-destruction bypass; if the TVS voltage is too low, it is possible that when the sub-module is working normally, it will be affected by the switch device shutdown spike or surge injection, affecting the normal operation of the sub-module.
  • a module overvoltage protection circuit of the present embodiment includes: a bridge structure module, which is a bridge structure formed by connecting multiple power devices and their anti-parallel diodes; a DC energy storage capacitor C1, which is connected in parallel with the bridge structure module; an overvoltage protection circuit, which is connected between the positive electrode of the DC energy storage capacitor C1 and the gate of the power device; wherein the overvoltage protection circuit includes multiple groups of first transient voltage suppression diodes TVSn and first isolation diodes D3 connected in series, the cathode of the first transient voltage suppression diode TVSn is connected to the positive electrode of the DC energy storage capacitor C1; the anode of the first isolation diode D3 is connected to the anode of the first transient voltage suppression diode TVSn, and the cathode of the first isolation diode D3 is connected to the gate of the power device.
  • the overvoltage protection circuit includes multiple groups of first transient voltage suppression diodes TVSn and first isolation diodes D3 connected in series, the
  • multiple groups of first transient voltage suppression diodes connected in series are provided with N numbers and form a TVSn branch
  • the cathode of TVSn faces the positive electrode of the DC energy storage capacitor
  • the TVSn branch is used to automatically break down and charge the gate of the power device when the capacitor voltage is overvoltage, and realize short circuit protection after turning on the power device
  • the anode of the first isolation diode D3 faces the positive electrode of the DC energy storage capacitor
  • the first isolation diode D3 is used to prevent the drive circuit from directly charging the DC energy storage capacitor C1. Since the TVSn branch directly draws energy from the positive electrode of the DC energy storage capacitor C1, the overvoltage bypass of the bridge structure module can be reliably completed without affecting the normal working state of the bridge structure module itself, so as to obtain the basis for overvoltage protection.
  • the bridge structure module is any one of a half-bridge structure, a full-bridge structure, or a hybrid structure formed by connecting a full-bridge and a half-bridge.
  • the bridge structure module is a full-bridge or half-bridge structure composed of fully controlled or half-controlled devices such as IGBT, IEGT, and thyristor.
  • the bridge structure module can be any one of the following devices: Modules include: converter valve power modules for flexible direct current transmission, power modules for cascaded reactive power compensation devices, power modules for cascaded active filter devices, inverter unit power modules for cascaded high-voltage frequency conversion devices, or chopper power modules for cascaded direct current power supply devices, etc.
  • the bridge structure module when the bridge structure module is a half-bridge structure, multiple power devices are connected in series and then connected in parallel with the DC energy storage capacitor.
  • the half-bridge structure includes a DC port and an AC port; wherein a DC port is formed between the positive and negative electrodes of the DC energy storage capacitor; an AC port is formed between the midpoints of the half-bridge structure or between the positive or negative electrodes of the DC energy storage capacitor.
  • the multiple power devices at least one power device connected in parallel with the AC port is a short-circuit protection device, and the remaining power devices are auxiliary devices.
  • the power device composed of T2 and D2 is used as a short-circuit protection device, and the power device composed of T1 and D1 is used as an auxiliary device, and the short-circuit protection device and the auxiliary device are connected in series.
  • the bridge structure module further includes: a drive circuit, the drive circuit is connected in parallel with the short-circuit protection device and/or the auxiliary device; a bypass switch K1, the bypass switch K1 is connected in parallel with the short-circuit protection device.
  • the gates of the short-circuit protection device and the auxiliary device are respectively connected to the drive circuits isolated from each other, and the drive circuits are used to directly trigger the short-circuit protection device and the auxiliary device; the normally open contact of the bypass switch K1 is connected in parallel with the output end of the short-circuit protection device or the AC port of the half-bridge structure.
  • the overvoltage protection circuit further includes: M groups of second transient voltage suppression diodes TVSm connected in series; the cathode of the second transient voltage suppression diode TVSm is connected to the anode of the first transient voltage suppression diode TVSn; the anode TVSm of the second transient voltage suppression diode is connected to the anode of the first isolation diode D3; a first semiconductor switch Q1, the first semiconductor switch Q1 is connected to the second transient voltage suppression diode TVSm in parallel; a voltage protection unit, the voltage protection unit is connected to the first semiconductor switch Q1, and the first semiconductor switch Q1 is triggered by the voltage protection unit.
  • the voltage protection unit includes an energy extraction circuit, a comparison circuit and a trigger circuit; the energy extraction circuit is connected to the DC energy storage capacitor, the comparison circuit is connected to the energy extraction circuit, and the trigger circuit is connected to the comparison circuit; wherein the energy extraction circuit includes at least two voltage-dividing resistors R1, an energy extraction diode D4, a DC capacitor C3 and a voltage-stabilizing tube D5 connected in series; the voltage-dividing resistor R1 is connected in parallel with the DC energy storage capacitor C1, the middle point of the voltage-dividing resistor R1 is connected to the anode of the energy extraction diode anode D4, and the DC capacitor C3 and the voltage-stabilizing tube D5 are connected in parallel to the cathode of the energy extraction diode D4; the comparison circuit includes a comparator and an RC filter circuit connected in series; the positive end of the comparator is connected to the middle point of the voltage-dividing resistor R1 through the RC filter circuit; The negative end of the comparator
  • the voltage protection unit can trigger the first semiconductor switch Q1, and further connect another TVSm branch in series in the overvoltage protection circuit.
  • the TVS branch voltage in the overvoltage protection circuit can be actively changed, which increases the sensitivity of the overvoltage protection circuit triggering, thereby providing overvoltage protection for the short-circuit protection device.
  • the premise for achieving overvoltage protection is to set the action voltage of the first transient voltage suppression diode TVSn of the multiple series connections to Vcp 1 , and set the action voltage of the second transient voltage suppression diode TVSm of the multiple series connections to Vcp 2 , then Vcp 1 >Vcp 2 , and Vcp 1 +Vcp 2 >Vces, Vcp 1 ⁇ Vces.
  • the module overvoltage protection coordination process can be achieved.
  • the module overvoltage protection circuit also includes a diode rectifier bridge, the AC end of the diode rectifier bridge is connected between the gate and the emitter of the short-circuit protection device; a buffer energy storage capacitor C2, and the buffer energy storage capacitor C2 is connected in parallel with the DC end of the diode rectifier bridge.
  • the diode rectifier bridge is mainly composed of a bridge circuit composed of four diodes to realize the conversion of the input AC voltage into the output DC voltage. In each working cycle of the rectifier bridge, only two diodes work at the same time, and the unidirectional conduction function of the diode converts the AC into a unidirectional DC pulsating voltage.
  • the module overvoltage protection circuit also includes an active clamping circuit, which is connected between the collector and the gate of the auxiliary device; the active clamping circuit includes K groups of third transient voltage suppression diodes TVSk connected in series, and the cathode of the third transient voltage suppression diode TVSk is connected to the collector of the auxiliary device.
  • the active clamping circuit further includes: J groups of fourth transient voltage suppression diodes TVSj connected in series, the fourth transient voltage suppression diodes TVSj
  • the cathode of the transistor TVSj is connected to the anode of the third transient voltage suppression diode TVSk;
  • the second isolation diode D6, the anode of the second isolation diode D6 is connected to the anode of the fourth transient voltage suppression diode TVSj, the cathode of the second isolation diode D6 is connected to the gate of the auxiliary device, and the second isolation diode D6 is used to prevent the drive circuit from directly charging the DC energy storage capacitor C1;
  • the second semiconductor switch Q2, the second semiconductor switch Q2 is connected in parallel with the fourth transient voltage suppression diode TVSj, the base of the second semiconductor switch Q2 is connected to the drive circuit, and the second conductor switch Q2 is directly triggered by the drive circuit.
  • the TVS branch voltage can be actively changed, the sensitivity of the overvoltage protection circuit triggering is increased, and the auxiliary device can be protected from overvoltage.
  • the action voltage of the plurality of series-connected third transient voltage suppression diodes TVSk is Vcp 3
  • the action voltage of the plurality of series-connected fourth transient voltage suppression diodes TVSj is Vcp 4
  • Vcp 3 +Vcp 4 >Vces the module overvoltage protection coordination process can be realized.
  • the second semiconductor switch Q2 can also be triggered by other methods, and the active clamping circuit further includes: a plurality of groups of fourth transient voltage suppression diodes TVSj connected in series, the cathode of the fourth transient voltage suppression diode TVSj is connected to the anode of the third transient voltage suppression diode TVSk; a second isolation diode D6, the anode of the second isolation diode D6 is connected to the anode of the fourth transient voltage suppression diode TVSj, and the cathode of the second isolation diode D6 is connected to the gate of the auxiliary device; a second semiconductor switch Q2, the second semiconductor switch Q2 is connected in parallel with the fourth transient voltage suppression diode; an energy extraction circuit, the energy extraction circuit includes at least two voltage-dividing resistors R1 and an energy extraction diode connected in series.
  • a comparator circuit comprising a comparator and an RC filter circuit connected in series; the positive end of the comparator is connected to the middle point of the voltage-dividing resistor R1 through the RC filter circuit; the negative end of the comparator is connected to the cathode of the comparator through the resistor voltage-dividing circuit; a trigger circuit, the trigger circuit comprising a resistor push-pull circuit, the resistor push-pull circuit having a resistor R2, and the resistor R2 is connected to the output end of the comparator; a bootstrap circuit, the bootstrap circuit comprising a bootstrap capacitor C boost and a bootstrap diode D boost connected in series, the base of the second semiconductor switch Q2 is respectively connected to the cathode of the bootstrap diode D boost and the positive electrode of the bootstrap capacitor C boost , the negative electrode of the bootstrap capacitor C boost is connected to the emitter of the auxiliary device; the anode of the bootstrap diode D boost is connected to the resistor push-pull circuit.
  • a parallel circuit of a resistor and a capacitor is also included, and the parallel circuit is a filtering circuit; the parallel circuit is connected in series in the overvoltage protection circuit and/or the active clamping circuit, that is, the parallel circuit is connected in series with the first isolation diode and/or the second isolation diode to attenuate the low-frequency signal.
  • FIG6 it is a flowchart of a method for coordinating a module overvoltage protection circuit. The steps include:
  • the overshoot voltage Vk is determined by the maximum operating voltage of the bridge structure module, the parasitic inductance and the shutdown speed of the power device;
  • Vcp 3 k3*Vk ⁇ Vces, where k3 is the safety factor, which is subject to the actual operating conditions; Vcp 3 +Vcp 4 >Vces;
  • the overvoltage judgment basis can be obtained directly from the DC energy storage capacitor, and the short-circuit protection device can be triggered to open, thereby realizing the module overvoltage protection function.
  • the protection trigger condition is selected from the module capacitor voltage. While not affecting the original working state of the circuit, the overvoltage protection refusal problem of the power device is improved and the risk of false operation is reduced.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Protection Of Static Devices (AREA)
  • Inverter Devices (AREA)

Abstract

提供一种模块过压保护电路，属于压直流输电技术领域。包括桥式结构模块，桥式结构模块包括多个功率器件及其反并联二极管；直流储能电容，直流储能电容与桥式结构模块并联；过压保护电路，过压保护电路连接在直流储能电容的正极和功率器件的门极之间；其中，过压保护电路包括多组串联的第一瞬态电压抑制二极管和第一隔离二极管。通过直接从直流储能电容取得过压判断依据后，触发短路保护器件开通，实现模块过压保护功能，在不影响电路原有工作状态的同时，改善了功率器件过压保护拒动问题，还降低了误动风险。

Description

一种模块过压保护电路
相关申请
本申请要求于2022年10月11日提交中国专利局、申请号为202211241596.5、申请名称为“一种模块过压保护电路”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请属于高压直流输电技术领域，具体涉及一种模块过压保护电路。
背景技术
柔性直流输电系统中，随着子模块数量的增加，系统的故障率随模块故障也逐步增多，为此需要采用增加冗余模块的办法，提高系统可靠性。当有模块故障时，将故障模块旁路，即可切除故障模组。然而旁路故障模块需要板卡带电，当故障模块在启动充电过程中，出现故障则由于板卡尚未完全带电，从而不能进行旁路操作。此时故障模块电压无限上升，可以通过配置转折晶闸管，利用过电压将转折晶闸管击穿，完成旁路。然而，转折晶闸管的成本较高，还会增加模块较大的体积。
发明内容
发明目的：本申请提供一种模块过压保护电路，将瞬态电压抑制二极管所在的支路直接从电容两侧获取过压保护依据，实现过压保护功能。
技术方案：本申请的一种模块过压保护电路，包括：
桥式结构模块，所述桥式结构模块包括多个功率器件及各所述功率器件的反并联二极管；
直流储能电容，所述直流储能电容与所述桥式结构模块并联；
过压保护电路，所述过压保护电路连接在所述直流储能电容的正极和所述功率器件的门极之间；
其中，所述过压保护电路包括多组串联的第一瞬态电压抑制二极管和第一 隔离二极管，所述第一瞬态电压抑制二极管的阴极与所述直流储能电容的正极连接；所述第一隔离二极管的阳极与所述第一瞬态电压抑制二极管的阳极连接，所述第一隔离二极管的阴极与所述功率器件的门极连接。
在一些实施例中，所述桥式结构模块为半桥结构、全桥结构或全桥与半桥连接而成的混合结构中的任一种。
在一些实施例中，所述桥式结构模块为半桥结构，所述多个功率器件串联后与所述直流储能电容并联，所述半桥结构包括直流端口和交流端口；其中，所述直流储能电容的正极和负极之间形成所述直流端口；所述半桥结构的中点之间、或与所述直流储能电容的正极或负极之间形成所述交流端口。
在一些实施例中，在所述多个功率器件中，与所述交流端口并联的至少一个所述功率器件为短路保护器件，其余的所述功率器件为辅助器件。
在一些实施例中，所述桥式结构模块还包括：
驱动电路，所述驱动电路与所述短路保护器件和/或所述辅助器件并联；
旁路开关，所述旁路开关与所述短路保护器件并联。
在一些实施例中，所述过压保护电路还包括：
多组串联的第二瞬态电压抑制二极管；所述第二瞬态电压抑制二极管的阴极与所述第一瞬态电压抑制二极管的阳极连接；所述第二瞬态电压抑制二极管的阳极与所述第一隔离二极管的阳极连接；
第一半导体开关，所述第一半导体开关与所述第二瞬态电压抑制二极管并联；
电压保护单元，所述电压保护单元与所述第一半导体开关连接。
在一些实施例中，所述电压保护单元包括取能电路、比较电路和触发电路；所述取能电路与所述直流储能电容连接，所述比较电路与所述取能电路连接，所述触发电路与所述比较电路连接；
其中，所述取能电路包括至少两个串联的分压电阻、取能二极管、直流电容和稳压管；所述分压电阻与所述直流储能电容并联，所述分压电阻的中间点连接所述取能二极管阳极的阳极，所述直流电容和所述稳压管并联后与所述取能二极管的阴极连接；
所述比较电路包括相互串联的比较器和RC滤波电路；所述比较器的正端 通过RC滤波电路与所述分压电阻的中间点连接；所述比较器的负端经过电阻分压电路连接所述稳压管的阴极；
所述触发电路包括电阻推挽电路，所述电阻推挽电路分别与所述比较器的输出端和所述第一半导体开关的基极连接。
在一些实施例中，多组串联的第一瞬态电压抑制二极管的动作电压为Vcp1，多组串联的第二瞬态电压抑制二极管的动作电压为Vcp2，满足：Vcp1>Vcp2。
在一些实施例中，所述模块过压保护电路还包括：
二极管整流桥，所述二极管整流桥的交流端跨接在所述短路保护器件的门极和发射极之间；
缓冲储能电容，所述缓冲储能电容与所述二极管整流桥的直流端并联。
在一些实施例中，还包括：
有源钳位电路，所述有源钳位电路连接在所述辅助器件的集电极和门极之间；所述有源钳位电路包括多组串联的第三瞬态电压抑制二极管，所述第三瞬态电压抑制二极管的阴极与所述辅助器件的集电极连接。
在一些实施例中，所述有源钳位电路还包括：
多组串联的第四瞬态电压抑制二极管，所述第四瞬态电压抑制二极管的阴极与所述第三瞬态电压抑制二极管的阳极连接；
第二隔离二极管，所述第二隔离二极管的阳极与所述第四瞬态电压抑制二极管的阳极连接，所述第二隔离二极管的阴极与所述辅助器件的门极连接；
第二半导体开关，所述第二半导体开关与所述第四瞬态电压抑制二极管并联，所述第二半导体开关的基极与所述驱动电路连接。
在一些实施例中，多组串联的第三瞬态电压抑制二极管的动作电压为Vcp3，多组串联的第四瞬态电压抑制二极管的动作电压为Vcp4，满足：Vcp3>Vcp4。
在一些实施例中，所述有源钳位电路还包括：
多组串联的第四瞬态电压抑制二极管和，所述第四瞬态电压抑制二极管的阴极与所述第三瞬态电压抑制二极管的阳极连接；
第二隔离二极管，所述第二隔离二极管的阳极与所述第四瞬态电压抑制二 极管的阳极连接，所述第二隔离二极管的阴极与所述辅助器件的门极连接；
第二半导体开关，所述第二半导体开关与所述第四瞬态电压抑制二极管并联；
取能电路，所述取能电路包括至少两个串联的分压电阻、取能二极管、直流电容和稳压管；所述分压电阻与所述直流储能电容并联，所述分压电阻的中间点连接所述取能二极管阳极的阳极，所述直流电容和所述稳压管并联后与所述取能二极管的阴极连接；
比较电路，所述比较电路包括相互串联的比较器和RC滤波电路；所述比较器的正端通过RC滤波电路与所述分压电阻的中间点连接；所述比较器的负端经过电阻分压电路连接所述稳压管的阴极；
触发电路，所述触发电路包括电阻推挽电路，所述电阻推挽电路与所述比较器的输出端连接；
自举电路，所述自举电路包括相互串联的自举电容和自举二极管，所述第二半导体开关的基极分别连接所述自举二极管的阴极和所述自举电容的正极，所述自举电容的负极连接所述辅助器件的发射极；所述自举二极管的阳极连接所述电阻推挽电路。
在一些实施例中，所述模块过压保护电路还包括：
并联回路，所述并联回路由电阻和电容并联组成，所述并联回路与所述第一隔离二极管和/或所述第二隔离二极管串联。
有益效果：与现有技术相比，本申请的一种模块过压保护电路，包括：桥式结构模块，桥式结构模块包括多个功率器件及其反并联二极管；直流储能电容，直流储能电容与桥式结构模块并联；过压保护电路，过压保护电路连接在直流储能电容的正极和功率器件的门极之间；其中，过压保护电路包括多组串联的第一瞬态电压抑制二极管和第一隔离二极管，第一瞬态电压抑制二极管的阴极与直流储能电容的正极连接；第一隔离二极管的阳极与第一瞬态电压抑制二极管的阳极连接，第一隔离二极管的阴极与功率器件的门极连接。本申请通过直接从直流储能电容取得过压判断依据后，触发短路保护器件开通，实现模块过压保护功能，能够可靠完成功率器件过压旁路，并不影响子模块自身正常工作状态。相比现有的模块过压保护电路，本申请从模块电容电压选取保护触 发条件，在不影响电路原有工作状态的同时，改善了功率器件过压保护拒动问题，还降低了误动风险。
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1是本申请实施例提供的一种模块过压保护电路示意图；
图2是本申请实施例提供的另一种模块过压保护电路示意图；
图3是本申请实施例提供的另一种模块过压保护电路示意图；
图4是本申请实施例提供的另一种模块过压保护电路示意图；
图5是本申请实施例提供的另一种模块过压保护电路示意图；
图6是本申请实施例提供的模块过压保护电路配合方法流程示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然， 它们仅仅为示例，并且目的不在于限制本申请。
发明人发现，现有的有源钳位方案是通过附加有源钳位支路，在模块出现过压问题时，导通事先制定的功率器件，完成功率器件的自毁直通，从而实现模块的旁路功能。现有方案存在的问题是，有源钳位支路采用的瞬态电压抑制二极管(TVS)在通流大小、温度变化、器件特性的离散性特征等因素下，额定稳压值会在一定范围内浮动，使得待保护模块过压值浮动范围较大，从而当子模块需要完成自毁旁路时，电压并不固定，为TVS的设计带来了难题。TVS电压太高，则有可能TVS支路不动作，导致自毁旁路失败；TVS电压太低，则有可能在子模块正常工作时，受开关器件关断尖峰或遭遇浪涌注入，影响子模块正常工作。
因此，需要提供一种模块过压保护电路，以解决现有技术中存在的问题。
本实施例的一种模块过压保护电路，包括：桥式结构模块，桥式结构模块是由多个功率器件及其反并联二极管连接而成的桥式结构；直流储能电容C1，直流储能电容C1与桥式结构模块并联；过压保护电路，过压保护电路连接在直流储能电容C1的正极和功率器件的门极之间；其中，过压保护电路包括多组串联的第一瞬态电压抑制二极管TVSn和第一隔离二极管D3，第一瞬态电压抑制二极管TVSn的阴极与直流储能电容C1的正极连接；第一隔离二极管D3的阳极与第一瞬态电压抑制二极管TVSn的阳极连接，第一隔离二极管D3的阴极与功率器件的门极连接。
在一些实施例中，多组串联的第一瞬态电压抑制二极管设置有N个并形成TVSn支路，TVSn阴极朝向直流储能电容的正极，TVSn支路用于在电容电压过压时自动击穿给功率器件的门极充电，导通功率器件后实现短路的保护；第一隔离二极管D3的阳极朝向直流储能电容的正极，第一隔离二极管D3用于防止驱动电路直接对直流储能电容C1充电，由于TVSn支路直接从直流储能电容C1的正极取能，从而可靠完成桥式结构模块过压旁路，并不影响桥式结构模块自身正常工作状态，以获取过压保护依据。
在一些实施例中，桥式结构模块为半桥结构、全桥结构或全桥与半桥连接而成的混合结构中的任一种。比如，桥式结构模块为由IGBT、IEGT、晶闸管类全控或半控器件构成的全桥或半桥结构。桥式结构模块可以是以下装置中的 模块，包括：柔性直流输电的换流阀功率模块、级联型无功补偿装置的功率模块、级联型有源滤波装置的功率模块、级联型高压变频装置的逆变单元功率模块或级联型直流电源装置的斩波功率模块等。
在一些实施例中，参见图1，当桥式结构模块为半桥结构时，多个功率器件串联后与直流储能电容并联，图1中功率器件设置两个；半桥结构包括直流端口和交流端口；其中，直流储能电容的正极和负极之间形成直流端口；半桥结构的中点之间、或与直流储能电容的正极或负极之间形成交流端口。在多个功率器件中，与交流端口并联的至少一个功率器件为短路保护器件，其余的功率器件为辅助器件。例如，图1中由T2和D2共同构成的功率器件作为短路保护器件，有T1和D1共同构成的功率器件作为辅助器件，短路保护器件与辅助器件之间串联。
在一些实施例中，桥式结构模块还包括：驱动电路，驱动电路与短路保护器件和/或辅助器件并联；旁路开关K1，旁路开关K1与短路保护器件并联。在一些实施例中，短路保护器件和辅助器件的门极分别连接相互隔离的驱动电路，驱动电路用于直接触发短路保护器件和辅助器件；旁路开关K1的常开接点并联在短路保护器件的输出端或半桥结构的交流端口。
在一些实施例中，参见图2，过压保护电路还包括：M组串联的第二瞬态电压抑制二极管TVSm；第二瞬态电压抑制二极管TVSm的阴极与第一瞬态电压抑制二极管TVSn的阳极连接；第二瞬态电压抑制二极管的阳极TVSm与第一隔离二极管D3的阳极连接；第一半导体开关Q1，第一半导体开关Q1与第二瞬态电压抑制二极管TVSm并联；电压保护单元，电压保护单元与第一半导体开关Q1连接，第一半导体开关Q1由电压保护单元触发。
在一些实施例中，进一步参见图2，电压保护单元包括取能电路、比较电路和触发电路；取能电路与直流储能电容连接，比较电路与取能电路连接，触发电路与比较电路连接；其中，取能电路包括至少两个串联的分压电阻R1、取能二极管D4、直流电容C3和稳压管D5；分压电阻R1与直流储能电容C1并联，分压电阻R1的中间点连接取能二极管阳极D4的阳极，直流电容C3和稳压管D5并联后与取能二极管D4的阴极连接；比较电路包括相互串联的比较器和RC滤波电路；比较器的正端通过RC滤波电路与分压电阻R1的中间点连接； 比较器的负端经过电阻分压电路连接稳压管的阴极；RC滤波电路通常由一个电容和一个电阻组成；电阻分压电路至少包括一个用于分压的电阻，由于稳压器的阴极和比较器的负端都连接Vcc，属于连接在同一个连接点上，因此实现了比较器的负端与稳压器的阴极的连接。触发电路包括电阻推挽电路，电阻推挽电路具有电阻R2，电阻R2分别与比较器的输出端和第一半导体开关Q1的基极连接。
在一些实施例中，通过取能电路、比较电路和触发电路的设置，可以实现电压保护单元触发第一半导体开关Q1，且在过压保护电路中进一步串联另一个TVSm支路，通过两段串联的方式，即TVSm与TVSn同向串联且TVSm靠近短路保护器件的门极，可以主动改变过压保护电路中TVS支路电压，增加了过压保护电路触发的灵敏度，从而可以对短路保护器件进行过压保护。在一些实施例中，当短路保护器件的过压击穿电压为Vces，实现过压保护的前提是，令多组串联的第一瞬态电压抑制二极管TVSn的动作电压为Vcp1，令多组串联的第二瞬态电压抑制二极管TVSm的动作电压为Vcp2，则Vcp1>Vcp2，且Vcp1+Vcp2>Vces，Vcp1<Vces，当满足上述关系时，可以实现模块过压保护配合过程。
在一些实施例中，参见图3，为了使接入交流端口的电路中的电流只按单向流动，模块过压保护电路还包括二极管整流桥，二极管整流桥的交流端跨接在短路保护器件的门极和发射极之间；缓冲储能电容C2，缓冲储能电容C2与极管整流桥的直流端并联。二极管整流桥内部主要是由四个二极管组成的桥路来实现把输入的交流电压转化为输出的直流电压，在整流桥的每个工作周期内，同一时间只有两个二极管进行工作，通过二极管的单向导通功能，把交流电转换成单向的直流脉动电压。
在一些实施例中，参见图4，为了进一步实现对辅助器件的过压保护，模块过压保护电路还包括有源钳位电路，有源钳位电路连接在辅助器件的集电极和门极之间；有源钳位电路包括K组串联的第三瞬态电压抑制二极管TVSk，第三瞬态电压抑制二极管TVSk的阴极与辅助器件的集电极连接。
在一些实施例中，参见图4，为了提高有源钳位电路的灵敏度，有源钳位电路还包括：J组串联的第四瞬态电压抑制二极管TVSj，第四瞬态电压抑制二 极管TVSj的阴极与第三瞬态电压抑制二极管TVSk的阳极连接；第二隔离二极管D6，第二隔离二极管D6的阳极与第四瞬态电压抑制二极管TVSj的阳极连接，第二隔离二极管D6的阴极与辅助器件的门极连接，第二隔离二极管D6用于防止驱动电路直接对直流储能电容C1充电；第二半导体开关Q2，第二半导体开关Q2与第四瞬态电压抑制二极管TVSj并联，第二半导体开关Q2的基极与驱动电路连接，第二导体开关Q2由驱动电路直接触发。同样通过两段串联的方式，即TVSj与TVSk同向串联且TVSj靠近辅助器件的门极，可以主动改变TVS支路电压，增加了过压保护电路触发的灵敏度，从而可以对辅助器件进行过压保护。令多组串联的第三瞬态电压抑制二极管TVSk的动作电压为Vcp3，多组串联的第四瞬态电压抑制二极管TVSj的动作电压为Vcp4，则Vcp3>Vcp4，且Vcp3+Vcp4>Vces，当满足上述关系时，可以实现模块过压保护配合过程。
在一些实施例中，参见图5，第二半导体开关Q2还可以通过其他方式触发，有源钳位电路还包括：多组串联的第四瞬态电压抑制二极管TVSj，第四瞬态电压抑制二极管TVSj的阴极与第三瞬态电压抑制二极管TVSk的阳极连接；第二隔离二极管D6，第二隔离二极管D6的阳极与第四瞬态电压抑制二极管TVSj的阳极连接，第二隔离二极管D6的阴极与辅助器件的门极连接；第二半导体开关Q2，第二半导体开关Q2与第四瞬态电压抑制二极管并联；取能电路，取能电路包括至少两个串联的分压电阻R1、取能二极管D4、直流电容C3和稳压管D5；分压电阻R1与直流储能电容C1并联，分压电阻R1的中间点连接取能二极管阳极D4的阳极，直流电容C3和稳压管D5并联后与取能二极管D4的阴极连接；比较电路，比较电路包括相互串联的比较器和RC滤波电路；比较器的正端通过RC滤波电路与分压电阻R1的中间点连接；比较器的负端经过电阻分压电路与比较器的阴极连接；触发电路，触发电路包括电阻推挽电路，电阻推挽电路具有电阻R2，电阻R2与比较器的输出端连接；自举电路，自举电路包括相互串联的自举电容Cboost和自举二极管Dboost，第二半导体开关Q2的基极分别连接自举二极管Dboost的阴极和自举电容Cboost的正极，自举电容Cboost的负极连接辅助器件的发射极；自举二极管Dboost的阳极连接电阻推挽电路。通过自举电容Cboost和自举二极管Dboost等电子元件，使电容放电电压和电源电压叠加，从而使电压升高，并结合电压保护电源，实现对第二半导体开关Q2的 触发。
在一些实施例中，还包括电阻和电容的并联回路，并联回路为滤波电路；并联回路串联连接在过压保护电路和/或有源钳位电路之中，即并联回路与第一隔离二极管和/或第二隔离二极管串联，用于衰减低频信号。
如附图6所示，为一种模块过压保护电路的配合方法流程示意图。步骤包括：
S11：确定功率器件的耐受电压Vces；
S12：由桥式结构模块的最高工作电压、寄生电感和功率器件关断速度来决定过冲电压Vk；
S13：确定所压保护单元比较电路的动作电压Vop，Vop<Vces；
S14：选取Vcp3＝k3*Vk<Vces，其中k3为安全系数，以实际运行的工况为准；Vcp3+Vcp4>Vces；
S15：选取Vcp1+Vcp2>Vces；Vcp1<Vces。
通过上述的配合方法，可以通过直接从直流储能电容取得过压判断依据后，触发短路保护器件开通，实现模块过压保护功能，从模块电容电压选取保护触发条件，在不影响电路原有工作状态的同时，改善了功率器件的过压保护拒动问题，还降低了误动风险。
以上对本申请实施例所提供的一种模块过压保护电路进行了详细介绍，本申请中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (14)

  1. 一种模块过压保护电路，包括：
    桥式结构模块，所述桥式结构模块包括多个功率器件及各所述功率器件的反并联二极管；
    直流储能电容，所述直流储能电容与所述桥式结构模块并联；
    过压保护电路，所述过压保护电路连接在所述直流储能电容的正极和所述功率器件的门极之间；
    其中，所述过压保护电路包括多组串联的第一瞬态电压抑制二极管和第一隔离二极管，所述第一瞬态电压抑制二极管的阴极与所述直流储能电容的正极连接；所述第一隔离二极管的阳极与所述第一瞬态电压抑制二极管的阳极连接，所述第一隔离二极管的阴极与所述功率器件的门极连接。
  2. 根据权利要求1所述的模块过压保护电路，其中，所述桥式结构模块为半桥结构、全桥结构或全桥与半桥连接而成的混合结构中的任一种。
  3. 根据权利要求2所述的模块过压保护电路，其中，所述桥式结构模块为半桥结构，所述多个功率器件串联后与所述直流储能电容并联，所述半桥结构包括直流端口和交流端口；其中，所述直流储能电容的正极和负极之间形成所述直流端口；所述半桥结构的中点之间、或与所述直流储能电容的正极或负极之间形成所述交流端口。
  4. 根据权利要求3所述的模块过压保护电路，其中，在所述多个功率器件中，与所述交流端口并联的至少一个所述功率器件为短路保护器件，其余的所述功率器件为辅助器件。
  5. 根据权利要求4所述的模块过压保护电路，其中，所述桥式结构模块还包括：
    驱动电路，所述驱动电路与所述短路保护器件和/或所述辅助器件并联；
    旁路开关，所述旁路开关与所述短路保护器件并联。
  6. 根据权利要求3所述的模块过压保护电路，其中，所述过压保护电路还包括：
    多组串联的第二瞬态电压抑制二极管；所述第二瞬态电压抑制二极管的阴极与所述第一瞬态电压抑制二极管的阳极连接；所述第二瞬态电压抑制二极管 的阳极与所述第一隔离二极管的阳极连接；
    第一半导体开关，所述第一半导体开关与所述第二瞬态电压抑制二极管并联；
    电压保护单元，所述电压保护单元与所述第一半导体开关连接。
  7. 根据权利要求6所述的模块过压保护电路，其中，所述电压保护单元包括取能电路、比较电路和触发电路；所述取能电路与所述直流储能电容连接，所述比较电路与所述取能电路连接，所述触发电路与所述比较电路连接；
    其中，所述取能电路包括至少两个串联的分压电阻、取能二极管、直流电容和稳压管；所述分压电阻与所述直流储能电容并联，所述分压电阻的中间点连接所述取能二极管阳极的阳极，所述直流电容和所述稳压管并联后与所述取能二极管的阴极连接；
    所述比较电路包括相互串联的比较器和RC滤波电路；所述比较器的正端通过RC滤波电路与所述分压电阻的中间点连接；所述比较器的负端经过电阻分压电路连接所述稳压管的阴极；
    所述触发电路包括电阻推挽电路，所述电阻推挽电路分别与所述比较器的输出端和所述第一半导体开关的基极连接。
  8. 根据权利要求6所述的模块过压保护电路，其中，多组串联的第一瞬态电压抑制二极管的动作电压为Vcp1，多组串联的第二瞬态电压抑制二极管的动作电压为Vcp2，满足：Vcp1>Vcp2。
  9. 根据权利要求4所述的模块过压保护电路，其中，所述模块过压保护电路还包括：
    二极管整流桥，所述二极管整流桥的交流端跨接在所述短路保护器件的门极和发射极之间；
    缓冲储能电容，所述缓冲储能电容与所述二极管整流桥的直流端并联。
  10. 根据权利要求5所述的模块过压保护电路，其中，还包括：
    有源钳位电路，所述有源钳位电路连接在所述辅助器件的集电极和门极之间；所述有源钳位电路包括多组串联的第三瞬态电压抑制二极管，所述第三瞬态电压抑制二极管的阴极与所述辅助器件的集电极连接。
  11. 根据权利要求10所述的模块过压保护电路，其中，所述有源钳位电路 还包括：
    多组串联的第四瞬态电压抑制二极管，所述第四瞬态电压抑制二极管的阴极与所述第三瞬态电压抑制二极管的阳极连接；
    第二隔离二极管，所述第二隔离二极管的阳极与所述第四瞬态电压抑制二极管的阳极连接，所述第二隔离二极管的阴极与所述辅助器件的门极连接；
    第二半导体开关，所述第二半导体开关与所述第四瞬态电压抑制二极管并联，所述第二半导体开关的基极与所述驱动电路连接。
  12. 根据权利要求11所述的模块过压保护电路，其中，多组串联的第三瞬态电压抑制二极管的动作电压为Vcp3，多组串联的第四瞬态电压抑制二极管的动作电压为Vcp4，满足：Vcp3>Vcp4。
  13. 根据权利要求10所述的模块过压保护电路，其中，所述有源钳位电路还包括：
    多组串联的第四瞬态电压抑制二极管，所述第四瞬态电压抑制二极管的阴极与所述第三瞬态电压抑制二极管的阳极连接；
    第二隔离二极管，所述第二隔离二极管的阳极与所述第四瞬态电压抑制二极管的阳极连接，所述第二隔离二极管的阴极与所述辅助器件的门极连接；
    第二半导体开关，所述第二半导体开关与所述第四瞬态电压抑制二极管并联；
    取能电路，所述取能电路包括至少两个串联的分压电阻、取能二极管、直流电容和稳压管；所述分压电阻与所述直流储能电容并联，所述分压电阻的中间点连接所述取能二极管阳极的阳极，所述直流电容和所述稳压管并联后与所述取能二极管的阴极连接；
    比较电路，所述比较电路包括相互串联的比较器和RC滤波电路；所述比较器的正端通过RC滤波电路与所述分压电阻的中间点连接；所述比较器的负端经过电阻分压电路连接所述稳压管的阴极；
    触发电路，所述触发电路包括电阻推挽电路，所述电阻推挽电路与所述比较器的输出端连接；
    自举电路，所述自举电路包括相互串联的自举电容和自举二极管，所述第二半导体开关的基极分别连接所述自举二极管的阴极和所述自举电容的正极， 所述自举电容的负极连接所述辅助器件的发射极；所述自举二极管的阳极连接所述电阻推挽电路。
  14. 根据权利要求10所述的模块过压保护电路，其中，所述模块过压保护电路还包括：
    并联回路，所述并联回路由电阻和电容并联组成，所述并联回路与所述第一隔离二极管和/或所述第二隔离二极管串联。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104052048A (zh) * 2014-07-10 2014-09-17 北京赛德高科铁道电气科技有限责任公司 一种igbt驱动的有源钳位电路
DE202014105631U1 (de) * 2014-11-21 2014-12-09 Infineon Technologies Ag Schaltungsanordnung zur Reduzierung von Überspannungen
CN104659757A (zh) * 2014-12-25 2015-05-27 深圳青铜剑电力电子科技有限公司 一种igbt过压保护电路及一种igbt过压保护方法
KR20180106622A (ko) * 2017-03-21 2018-10-01 엘에스산전 주식회사 액티브 클램프 제어장치
CN110380387A (zh) * 2019-07-26 2019-10-25 中国南方电网有限责任公司超高压输电公司 一种功率模块的故障保护电路
CN115483818A (zh) * 2022-10-11 2022-12-16 南京南瑞继保电气有限公司 一种模块过压保护电路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104052048A (zh) * 2014-07-10 2014-09-17 北京赛德高科铁道电气科技有限责任公司 一种igbt驱动的有源钳位电路
DE202014105631U1 (de) * 2014-11-21 2014-12-09 Infineon Technologies Ag Schaltungsanordnung zur Reduzierung von Überspannungen
CN104659757A (zh) * 2014-12-25 2015-05-27 深圳青铜剑电力电子科技有限公司 一种igbt过压保护电路及一种igbt过压保护方法
KR20180106622A (ko) * 2017-03-21 2018-10-01 엘에스산전 주식회사 액티브 클램프 제어장치
CN110380387A (zh) * 2019-07-26 2019-10-25 中国南方电网有限责任公司超高压输电公司 一种功率模块的故障保护电路
CN115483818A (zh) * 2022-10-11 2022-12-16 南京南瑞继保电气有限公司 一种模块过压保护电路

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