WO2024074014A1 - Déflecteur de faisceau térahertz pour 6g sur la base d'une métasurface de cristaux liquides - Google Patents

Déflecteur de faisceau térahertz pour 6g sur la base d'une métasurface de cristaux liquides Download PDF

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Publication number
WO2024074014A1
WO2024074014A1 PCT/CN2023/082258 CN2023082258W WO2024074014A1 WO 2024074014 A1 WO2024074014 A1 WO 2024074014A1 CN 2023082258 W CN2023082258 W CN 2023082258W WO 2024074014 A1 WO2024074014 A1 WO 2024074014A1
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WIPO (PCT)
Prior art keywords
metasurface
meta
reflection angle
coding sequence
atoms
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PCT/CN2023/082258
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English (en)
Inventor
Daquan Yang
Erpeng LV
Yanzhao Hou
Bingchao LIU
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Lenovo (Beijing) Ltd.
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Priority to PCT/CN2023/082258 priority Critical patent/WO2024074014A1/fr
Publication of WO2024074014A1 publication Critical patent/WO2024074014A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
    • H01Q3/44—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the electric or magnetic characteristics of reflecting, refracting, or diffracting devices associated with the radiating element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/14—Reflecting surfaces; Equivalent structures
    • H01Q15/148—Reflecting surfaces; Equivalent structures with means for varying the reflecting properties

Definitions

  • the subject matter disclosed herein generally relates to wireless communications, and more particularly relates to apparatus and method for terahertz (THz) beam deflector for 6G based on liquid crystal metasurface.
  • THz terahertz
  • the sixth generation (6G) of mobile communications will use the THz band to provide ultra-high speed information transmission and ubiquitous wireless connection. Nevertheless, THz links have the disadvantages of loss of channel path and line-of-sight transmission, which greatly limits the communication transmission.
  • This invention targets improvement of RIS.
  • a RIS device includes a metasurface that reflects terahertz transmission with a reflection angle, wherein the RIS device comprises a transceiver; and a processor coupled to the transceiver, wherein the processor is configured to cause the RIS device to transmit parameter for controlling the reflection angle of the metasurface; and receive an indication of a coding sequence to control the reflection angle.
  • the parameter for controlling the reflection angle of the metasurface is a mapping relation between an index and the reflection angle, and the indication of the coding sequence is the index.
  • the parameter for controlling the reflection angle of the metasurface is the values of M, N, g and h
  • the indication of the reflection angle is a coding sequence with M/g ⁇ N/h bits.
  • Each bit in the coding sequence may control the states of all meta-atoms in one unit cell.
  • Each bit of the coding sequence may be set as ‘0’ or ‘1’ corresponding to a different state of the meta-atoms in one unit cell.
  • Each bit of the coding sequence may be converted by an operational amplifier to a bias voltage.
  • the metasurface is composed of multiple meta-atoms, each meta-atom includes a liquid crystal layer sandwiched between an upper metallic layer and a lower metallic layer.
  • a symmetrical split-ring is removed from the upper metallic layer, where an inner side of the ring connects to an outer side of the ring with two symmetrical parts of the ring that are not removed.
  • the outer radius of the ring is 300 ⁇ m
  • the inner radius of the ring is 190 ⁇ m
  • an orientation angle of each symmetrical part is 30°.
  • a method performed at a RIS device that includes a metasurface that reflects terahertz transmission with a reflection angle comprising: transmitting parameter for controlling the reflection angle of the metasurface; and receiving an indication of a coding sequence to control the reflection angle.
  • a base unit comprises a transceiver; and a processor coupled to the transceiver, wherein the processor is configured to cause the base unit to: receive parameter for controlling a reflection angle of a metasurface of a RIS device, wherein, the metasurface reflects terahertz transmission with the reflection angle; and transmit an indication of a coding sequence to control the reflection angle.
  • the parameter for controlling the reflection angle of the metasurface is a mapping relation between an index and the reflection angle, and the indication of the coding sequence is the index.
  • the parameter for controlling the reflection angle of the metasurface is the values of M, N, g and h
  • the indication of the reflection angle is a coding sequence with M/g ⁇ N/h bits.
  • Each bit in the coding sequence may control the states of all meta-atoms in one unit cell.
  • Each bit of the coding sequence may be set as ‘0’ or ‘1’ corresponding to a different state of the meta-atoms in one unit cell.
  • a method performed at a base unit comprises receiving parameter for controlling a reflection angle of a metasurface of a RIS device, wherein, the metasurface reflects terahertz transmission with the reflection angle; and 804 transmitting an indication of a coding sequence to control the reflection angle.
  • Figure 1 illustrates a RIS device
  • Figures 2 (a) , 2 (b) , 2 (c) and 2 (d) show an example of a structure of each LC meta-atom of the metasurface according to this disclosure
  • Figures 3 (a) and 3 (b) show the distribution of liquid crystal molecules under applied voltage
  • Figure 4 (a) shows the reflection amplitude of the meta-atom
  • Figure 4 (b) shows the phase difference between the meta-atom in “state a” and the meta-atom in “state b” ;
  • Figures 5 (a) -5 (d) show different implementations of unit cell
  • Figure 6 illustrates a structure of terahertz communication system
  • Figure 7 is a schematic flow chart diagram illustrating an embodiment of a method according to the present application.
  • Figure 8 is a schematic flow chart diagram illustrating an embodiment of a method according to the present application.
  • Figure 9 is a schematic block diagram illustrating apparatuses according to one embodiment.
  • Figure 1 illustrates a RIS device (100) .
  • the RIS device (100) is composed of an array (110) (referred to as metasurface) and an array control module (e.g., controller) (120) .
  • the array control module may include FPGA (120-2) and an operational amplifier (120-1) .
  • the metasurface includes a quantity of repeated units distributed on one or more panels, where each unit can be referred to as a meta-atom.
  • the RIS device may be configured to control a radiation direction of a beam (e.g., a THz beam) .
  • Snell s formula is used to explain the beam steering function.
  • the RIS device may control a radiation direction of a beam based on Snell’s formula given by Equation (1) :
  • ⁇ i and ⁇ r define an incident angle and a reflection angle of the THz beam, respectively;
  • ⁇ 0 defines an operating wavelength of the THz beam;
  • n i defines a refraction index of a medium (e.g., air) above a metasurface which is designed by a VO 2 , and corresponds to a phase gradient endowed by the metasurface.
  • a medium e.g., air
  • Equation (1) can be simplified to Equation (2) :
  • the reflection angle (which indicates the radiation direction or deflection direction) ( ⁇ r ) of the reflected THz beam may be determined according to Equation (3) :
  • the radiation direction of the reflected THz beam by the RIS device (in particular, by the metasurface) can be tuned by changing the phase gradient
  • the reflection angle is equal to the incident angle. Due to the property of metasurface, when the THz beam is reflected by the metasurface, a steering angle is added to the reflection angle. It means that the reflection direction is deflected or steered by the steering angle caused by the metasurface. That is, the actual reflection angle reflected by the metasurface is equal to the sum of the reflection angle and the steering angel. In this disclosure, the incident angle is equal to 0°. So, the steering angle and the actual reflection angle have the same value. In the following description, the actual reflection angle is referred to as reflection angle. In other words, in the following description, the reflection angle and the steering angle have the same value.
  • a RIS device used in a THz frequency (e.g., 0.213THz) , where the metasurface of the RIS device is based on liquid crystal (LC) .
  • LC liquid crystal
  • each meta-atom shown in Figure 1 can be a LC meta-atom.
  • the LC meta-atoms can be controlled by a controller to control the radiation direction of the reflected THz beam.
  • a field-programmable gate array FPGA
  • the bias voltages are used to control the meta-atoms to change the phase gradient of the metasurface in a THz frequency, where the THz frequency indicates an operating bandwidth of the RIS device.
  • Figures 2 (a) , 2 (b) , 2 (c) and 2 (d) show an example of a structure of each LC meta-atom of the metasurface according to this disclosure.
  • Figure 2 (a) shows a three dimensional view
  • Figure 2 (b) shows a front view
  • Figure 2 (c) shows an upper view of a lower metallic layer
  • Figure 2 (d) shows an upper view of an upper metallic layer.
  • a LC layer is sandwiched between two metallic (e.g., copper) layers (e.g., upper metallic layer and lower metallic layer) , where the LC layer is for example in a thickness (h L ) of 25 ⁇ m, and each metallic layer is for example in a thickness (h c ) of 2 ⁇ m.
  • the metallic layers sandwiching the LC layer are sandwiched between two quartz layers (e.g., upper quartz layer and lower quartz layer, where each quartz layer is for example in a thickness (h q ) of 500 ⁇ m. Note that the upper quartz layer is not shown in Figure 2 (a) .
  • Figure 2 (c) shows the upper view of the lower metallic layer on the lower quartz layer.
  • the lower metallic layer has a length of p in y direction that is larger than p 1 which is a length in x direction.
  • the length of p is for example 630 ⁇ m; and the length of p 1 is for example 590 ⁇ m.
  • the two extra parts (in x direction with a total length of p -p 1 ) in the lower metallic layer may be filled with LC.
  • Figure 2 (d) shows the upper view of the upper metallic layer.
  • the upper metallic layer occupies a square with a side length of p.
  • a symmetrical split-ring is removed from the upper metallic layer.
  • the outer radius (r 1 ) of the ring is for example 300 ⁇ m; and the inner radius (r 2 ) of the ring is for example 190 ⁇ m.
  • the inner side of the ring connects to the outer side of the ring with two symmetrical parts of the ring (i.e., the parts that are not removed from the ring) .
  • An orientation angle ( ⁇ ) of each symmetrical part refers to the angle of the symmetrical part within the ring.
  • the orientation angle ( ⁇ ) is for example 30°.
  • the angular bisector of the orientation angle ( ⁇ ) of each symmetrical part is along the x axis.
  • the symmetrical split-ring of the upper metallic layer forms a resonant ring structure.
  • Figures 3 (a) and 3 (b) shows the distribution of LC molecules under applied voltage (e.g., bias voltage, or abbreviated as “bias” ) .
  • bias voltage e.g., bias voltage
  • all LC molecules are aligned along the horizontal direction, which is referred to as “state a” (see Figure 3 (a) ) .
  • state b shows the distribution of LC molecules under applied voltage.
  • the refractive index of the LC is referred to as extraordinary refractive index (n e ) .
  • the refractive index of the LC is referred to as ordinary refractive index (n o ) . So, the refractive index of the LC is different in “state a” or “state b” , i.e., when different bias voltage is applied.
  • the LC with model LC NC-M-LC-LDn03 is used.
  • THz frequencies e.g., 0.213 THz
  • Figure 4 (a) shows the reflection amplitude of the meta-atom. It shows that the reflection coefficient at the frequency of 213 GHz (i.e., 0.213 THz) is almost the same for the meta-atom in “state a” (i.e., no voltage difference exists (i.e., bias off) between the two metallic layers) and the meta-atom in “state b” (i.e., there is voltage difference (i.e., bias on) between the two metallic layers) .
  • Figure 4 (b) shows that, at the frequency of 213 GHz (i.e., 0.213 THz) , the phase difference (i.e., ⁇ phase) between the meta-atom in “state a” and the meta-atom in “state b” is about 180° (i.e., near ⁇ ) .
  • the following description focuses on dynamically controlling the phase gradient of the metasurface (i.e., dynamically controlling the state of each meta-atom of the metasurface) , so that the radiation direction the THz beam reflected by the metasurface (which can be referred to as beam steering) can be controlled accordingly.
  • the state of each meta-atom of the metasurface is controlled.
  • the state of each meta-atom can be either “state a” or “state b” .
  • the meta-atom in “state a” or “state b” depends on the bias voltage applied to the upper metallic layer and the lower metallic layer. When no bias voltage exists between the upper metallic layer and the lower metallic layer of a meta-atom, the meta-atom is in “state a” ; and when there is bias voltage between the upper metallic layer and the lower metallic layer of a meta-atom, the meta-atom is in “state b” .
  • This disclosure proposes to use 1 bit to indicate whether bias voltage is applied to a meta-atom (in particular, applied to the upper metallic layer and the lower metallic layer of the meta-atom) .
  • ‘0’ indicates that bias voltage is not applied to a meta-atom (or 0V is applied) , i.e., the meta-atom is in “state a” .
  • ‘1’ indicates bias voltage (e.g., 20V) is applied to a meta-atom, i.e., the meta-atom is in “state b” .
  • each of the M ⁇ N meta-atoms is controlled independently. It means that each meta-atom is a unit cell (see Figure 5 (a) ) .
  • the first implementation makes the phase distribution very complex while achieving beam deflection with largest degree of freedom.
  • the g ⁇ h meta-atoms in one unit cell are controlled together, which means that all g ⁇ h meta-atoms in one unit cell are in “state a” or all g ⁇ h meta-atoms in one unit cell are in “state b” .
  • the second implementation has fewer degrees of freedom for the beam deflection compared with the first implementation.
  • each column of M meta-atoms in N columns is a unit cell (see Figure 5 (c) ) .
  • the M meta-atoms in one unit cell (i.e., in one column) are controlled together, which means that all M ⁇ 1 meta-atoms in one unit cell (i.e., in one column) are in “state a” or all M ⁇ 1 meta-atoms in one column are in “state b” .
  • each row of N meta-atoms in M rows can be a unit cell (see Figure 5 (d) ) .
  • the N meta-atoms in one unit cell (i.e., in one row) are controlled together, which means that all 1 ⁇ N meta-atoms in one unit cell (i.e., in one row) are in “state a” or all 1 ⁇ N meta-atoms in one row are in “state b” .
  • the third or the fourth implementation has fewer degrees of freedom for the beam deflection compared with the first implementation.
  • the meta-atoms can be controlled in one dimension (per column or per row) , which is simple for controlling.
  • FIG. 6 illustrates a structure of THz communication system 600.
  • the RIS device (620) (in particular, the metasurface) reflects the beam received from the base unit (610) (e.g., gNB) to the UE (630) .
  • the RIS device (620) includes a RIS controller (625) which functions as the processor and the FPGA.
  • the THz beam control is realized by controlling the phase gradient of the meta-atoms of the metasurface (i.e., controlling the state of each meta-atom of the metasurface) .
  • a coding sequence e.g., a coding sequence ID indicating a coding sequence
  • the coding sequence corresponding to the indicated coding sequence ID is generated by the FPGA to apply to the metasurface. That is, each bit of the coding sequence, which is ‘0’ or ‘1’ , is applied to one unit cell.
  • ‘0’ is converted to “Bias off” (i.e., no voltage bias, e.g., 0V) to apply to all meta-atoms in the unit cell; and ‘1’ is converted to “Bias on” (i.e., a voltage bias, e.g., 20V) to apply to all meta-atoms in the unit cell.
  • the RIS device (620) shall report its array structure and the corresponding parameters to the gNB (610) .
  • the metasurface is composed of M ⁇ N meta-atoms and each unit cell is composed of g ⁇ h meta-atoms
  • the values of M, N, g and h shall be reported. It is assumed that the g ⁇ h meta-atoms in one unit cell are controlled together, i.e., they are controlled in the same state ( “state a” or “state b” ) .
  • the gNB may generate and send a coding sequence to the RIS device.
  • the gNB knows that the metasurface is composed of 18 ⁇ 16 meta-atoms, and each column of 18 meta-atoms are controlled together.
  • the RIS controller e.g., the FPGA
  • the operational amplifier see Figure 1 .
  • the operational amplifier outputs the bias voltages (e.g., 0V corresponding to ‘0’ or 20V corresponding to ‘1’ ) to the unit cells (i.e., columns) of meta-atoms of the metasurface.
  • the bias voltage of meta-atoms to be applied to each column (from column#1 to column#16) of meta-atoms of the metasurface is shown in Table 1.
  • the RIS device may report a mapping relation between a coding sequence (or a coding sequence index) and a beam direction.
  • a beam direction (e.g., reflection angle) can be controlled by a set of downtilt angle ( ⁇ ) and azimuth angle i.e., It means that the beam direction includes downtilt angle ( ⁇ ) and azimuth angle in two dimensions.
  • ⁇ downtilt angle
  • azimuth angle azimuth angle
  • each coding sequence can be associated with a beam direction or at least one of downtilt angle ( ⁇ ) and azimuth angle
  • ⁇ downtilt angle
  • azimuth angle a mapping between coding sequence (and/or coding sequence index) and beam direction can be established as in Table 2.
  • a coding sequence corresponds to a reflection angle (or a steering angle) , which means the radiation direction (or deflection direction) by the metasurface.
  • the RIS device may report to gNB the mapping relation between an index (e.g., coding sequence index) and deflection direction as shown in Table 3.
  • the gNB may determine a desired coding sequence (by its coding sequence index) based on the desired deflection direction.
  • the FPGA may store all coding sequences corresponding to all the supported deflection directions.
  • the FPGA may generate a coding sequence corresponding to the coding sequence index and input the coding sequence to the operational amplifier which generates bias voltages to each unit cell of the metasurface.
  • the gNB does not need to know that the index indicating the deflection direction is an index of the coding sequence. It means that gNB is only necessary to know that an index indicates a deflection direction. In other words, the gNB may regard Table 3 as Table 4.
  • the gNB determines an index (e.g., 1) from Table 4, and indicates the index (e.g., 1) corresponding to the desired deflection direction to the RIS device.
  • the deflection direction by the metasurface can be controlled by the coding sequence. That is, the structure of the metasurface (or the structure of each meta-atom of the metasurface) does not need to be changed when the deflection direction by the metasurface is changed according to the coding sequence.
  • the metasurface (or the RIS) in particular, the deflection direction by the metasurface (or the RIS device) , is reconfigurable.
  • Figure 7 is a schematic flow chart diagram illustrating an embodiment of a method 700 according to the present application.
  • the method 700 is performed by an apparatus, such as a RIS device, wherein the RIS device includes a metasurface that reflects THz transmission with a reflection angle.
  • the method 700 may be performed by a processor executing program code, for example, a microcontroller, a microprocessor, a CPU, a GPU, an auxiliary processing unit, a FPGA, or the like.
  • the method 700 may comprise 702 transmitting parameter for controlling the reflection angle of the metasurface; and 704 receiving an indication of a coding sequence to control the reflection angle.
  • the parameter for controlling the reflection angle of the metasurface is a mapping relation between an index and the reflection angle, and the indication of the coding sequence is the index.
  • the parameter for controlling the reflection angle of the metasurface is the values of M, N, g and h
  • the indication of the reflection angle is a coding sequence with M/g ⁇ N/h bits.
  • Each bit in the coding sequence may control the states of all meta-atoms in one unit cell.
  • Each bit of the coding sequence may be set as ‘0’ or ‘1’ corresponding to a different state of the meta-atoms in one unit cell.
  • Each bit of the coding sequence may be converted by an operational amplifier to a bias voltage.
  • the metasurface is composed of multiple meta-atoms, each meta-atom includes a liquid crystal layer sandwiched between an upper metallic layer and a lower metallic layer.
  • a symmetrical split-ring is removed from the upper metallic layer, where an inner side of the ring connects to an outer side of the ring with two symmetrical parts of the ring that are not removed.
  • the outer radius of the ring is 300 ⁇ m
  • the inner radius of the ring is 190 ⁇ m
  • an orientation angle of each symmetrical part is 30°.
  • Figure 8 is a schematic flow chart diagram illustrating an embodiment of a method 800 according to the present application.
  • the method 800 is performed by an apparatus, such as a base unit.
  • the method 800 may be performed by a processor executing program code, for example, a microcontroller, a microprocessor, a CPU, a GPU, an auxiliary processing unit, a FPGA, or the like.
  • the method 800 may comprise 802 receiving parameter for controlling a reflection angle of a metasurface of a RIS device, wherein, the metasurface reflects terahertz transmission with the reflection angle; and 804 transmitting an indication of a coding sequence to control the reflection angle.
  • the parameter for controlling the reflection angle of the metasurface is a mapping relation between an index and the reflection angle, and the indication of the coding sequence is the index.
  • the parameter for controlling the reflection angle of the metasurface is the values of M, N, g and h
  • the indication of the reflection angle is a coding sequence with M/g ⁇ N/h bits.
  • Each bit in the coding sequence may control the states of all meta-atoms in one unit cell.
  • Each bit of the coding sequence may be set as ‘0’ or ‘1’ corresponding to a different state of the meta-atoms in one unit cell.
  • Figure 9 is a schematic block diagram illustrating apparatuses according to one embodiment.
  • the RIS device includes a processor, a memory, and a transceiver that is a transmitter and/or a receiver.
  • the processors implement a function, a process, and/or a method which are proposed in Figure 7.
  • a RIS device includes a metasurface that reflects terahertz transmission with a reflection angle, wherein the RIS device comprises a transceiver; and a processor coupled to the transceiver, wherein the processor is configured to cause the RIS device to transmit parameter for controlling the reflection angle of the metasurface; and receive an indication of a coding sequence to control the reflection angle.
  • the parameter for controlling the reflection angle of the metasurface is a mapping relation between an index and the reflection angle, and the indication of the coding sequence is the index.
  • the parameter for controlling the reflection angle of the metasurface is the values of M, N, g and h
  • the indication of the reflection angle is a coding sequence with M/g ⁇ N/h bits.
  • Each bit in the coding sequence may control the states of all meta-atoms in one unit cell.
  • Each bit of the coding sequence may be set as ‘0’ or ‘1’ corresponding to a different state of the meta-atoms in one unit cell.
  • Each bit of the coding sequence may be converted by an operational amplifier to a bias voltage.
  • the metasurface is composed of multiple meta-atoms, each meta-atom includes a liquid crystal layer sandwiched between an upper metallic layer and a lower metallic layer.
  • a symmetrical split-ring is removed from the upper metallic layer, where an inner side of the ring connects to an outer side of the ring with two symmetrical parts of the ring that are not removed.
  • the outer radius of the ring is 300 ⁇ m
  • the inner radius of the ring is 190 ⁇ m
  • an orientation angle of each symmetrical part is 30°.
  • the gNB (i.e., the base unit) includes a processor, a memory, and a transceiver that is a transmitter and/or a receiver.
  • the processors implement a function, a process, and/or a method which are proposed in Figure 8.
  • the base unit comprises a transceiver; and a processor coupled to the transceiver, wherein the processor is configured to cause the base unit to: receiveparameter for controlling a reflection angle of a metasurface of a RIS device, wherein, the metasurface reflects terahertz transmission with the reflection angle; and transmit an indication of a coding sequence to control the reflection angle.
  • the parameter for controlling the reflection angle of the metasurface is a mapping relation between an index and the reflection angle, and the indication of the coding sequence is the index.
  • the parameter for controlling the reflection angle of the metasurface is the values of M, N, g and h
  • the indication of the reflection angle is a coding sequence with M/g ⁇ N/h bits.
  • Each bit in the coding sequence may control the states of all meta-atoms in one unit cell.
  • Each bit of the coding sequence may be set as ‘0’ or ‘1’ corresponding to a different state of the meta-atoms in one unit cell.
  • embodiments may be embodied as a system, apparatus, method, or program product. Accordingly, embodiments may take the form of an entirely hardware embodiment, an entirely software embodiment (including firmware, resident software, micro-code, etc. ) or an embodiment combining software and hardware aspects that may generally all be referred to herein as a “circuit” , “module” or “system” . Furthermore, embodiments may take the form of a program product embodied in one or more computer readable storage devices storing machine-readable code, computer readable code, and/or program code, referred to hereafter as “code” .
  • code computer readable storage devices storing machine-readable code, computer readable code, and/or program code, referred to hereafter as “code” .
  • the storage devices may be tangible, non-transitory, and/or non-transmission.
  • the storage devices may not embody signals. In a certain embodiment, the storage devices only employ signals for accessing code.
  • modules may be implemented as a hardware circuit comprising custom very-large-scale integration (VLSI) circuits or gate arrays, off-the-shelf semiconductors such as logic chips, transistors, or other discrete components.
  • VLSI very-large-scale integration
  • a module may also be implemented in programmable hardware devices such as field programmable gate arrays, programmable array logic, programmable logic devices or the like.
  • Modules may also be implemented in code and/or software for execution by various types of processors.
  • An identified module of code may, for instance, include one or more physical or logical blocks of executable code which may, for instance, be organized as an object, procedure, or function. Nevertheless, the executables of an identified module need not be physically located together, but, may include disparate instructions stored in different locations which, when joined logically together, include the module and achieve the stated purpose for the module.
  • a module of code may contain a single instruction, or many instructions, and may even be distributed over several different code segments, among different programs, and across several memory devices.
  • operational data may be identified and illustrated herein within modules and may be embodied in any suitable form and organized within any suitable type of data structure. This operational data may be collected as a single data set or may be distributed over different locations including over different computer readable storage devices.
  • the software portions are stored on one or more computer readable storage devices.
  • the computer readable medium may be a computer readable storage medium.
  • the computer readable storage medium may be a storage device storing code.
  • the storage device may be, for example, but need not necessarily be, an electronic, magnetic, optical, electromagnetic, infrared, holographic, micromechanical, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing.
  • a storage device would include the following: an electrical connection having one or more wires, a portable computer diskette, a hard disk, random access memory (RAM) , read-only memory (ROM) , erasable programmable read-only memory (EPROM or Flash Memory) , portable compact disc read-only memory (CD-ROM) , an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
  • a computer-readable storage medium may be any tangible medium that can contain or store a program for use by or in connection with an instruction execution system, apparatus, or device.
  • Code for carrying out operations for embodiments may include any number of lines and may be written in any combination of one or more programming languages including an object-oriented programming language such as Python, Ruby, Java, Smalltalk, C++, or the like, and conventional procedural programming languages, such as the "C" programming language, or the like, and/or machine languages such as assembly languages.
  • the code may be executed entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server.
  • the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN) , or the connection may be made to an external computer (for example, through the Internet using an Internet Service Provider) .
  • LAN local area network
  • WAN wide area network
  • Internet Service Provider an Internet Service Provider
  • the code may also be stored in a storage device that can direct a computer, other programmable data processing apparatus, or other devices, to function in a particular manner, such that the instructions stored in the storage device produce an article of manufacture including instructions which implement the function specified in the schematic flowchart diagrams and/or schematic block diagrams block or blocks.
  • the code may also be loaded onto a computer, other programmable data processing apparatus, or other devices, to cause a series of operational steps to be performed on the computer, other programmable apparatus or other devices to produce a computer implemented process such that the code executed on the computer or other programmable apparatus provides processes for implementing the functions specified in the flowchart and/or block diagram block or blocks.
  • each block in the schematic flowchart diagrams and/or schematic block diagrams may represent a module, segment, or portion of code, which includes one or more executable instructions of the code for implementing the specified logical function (s) .
  • Layers of a radio interface protocol may be implemented by the processors.
  • the memories are connected with the processors to store various pieces of information for driving the processors.
  • the transceivers are connected with the processors to transmit and/or receive a radio signal. Needless to say, the transceiver may be implemented as a transmitter to transmit the radio signal and a receiver to receive the radio signal.
  • the memories may be positioned inside or outside the processors and connected with the processors by various well-known means.
  • each component or feature should be considered as an option unless otherwise expressly stated.
  • Each component or feature may be implemented not to be associated with other components or features.
  • the embodiment may be configured by associating some components and/or features. The order of the operations described in the embodiments may be changed. Some components or features of any embodiment may be included in another embodiment or replaced with the component and the feature corresponding to another embodiment. It is apparent that the claims that are not expressly cited in the claims are combined to form an embodiment or be included in a new claim.
  • the embodiments may be implemented by hardware, firmware, software, or combinations thereof.
  • the exemplary embodiment described herein may be implemented by using one or more application-specific integrated circuits (ASICs) , digital signal processors (DSPs) , digital signal processing devices (DSPDs) , programmable logic devices (PLDs) , field programmable gate arrays (FPGAs) , processors, controllers, micro-controllers, microprocessors, and the like.
  • ASICs application-specific integrated circuits
  • DSPs digital signal processors
  • DSPDs digital signal processing devices
  • PLDs programmable logic devices
  • FPGAs field programmable gate arrays

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Abstract

Des procédés et des appareils pour un déflecteur de faisceau térahertz sont divulgués. Dans un mode de réalisation, un dispositif de surface intelligent reconfigurable comprend une métasurface qui réfléchit une transmission térahertz avec un angle de réflexion, le dispositif de surface intelligent reconfigurable comprenant un émetteur-récepteur; et un processeur couplé à l'émetteur-récepteur, le processeur étant configuré pour transmettre, par l'intermédiaire de l'émetteur-récepteur, un paramètre pour commander l'angle de réflexion de la métasurface; et recevoir, par l'intermédiaire de l'émetteur-récepteur, une indication d'une séquence de codage pour commander l'angle de réflexion.
PCT/CN2023/082258 2023-03-17 2023-03-17 Déflecteur de faisceau térahertz pour 6g sur la base d'une métasurface de cristaux liquides WO2024074014A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10665953B1 (en) * 2019-03-18 2020-05-26 Lumotive LLC Tunable liquid crystal metasurfaces
US20200350691A1 (en) * 2019-05-03 2020-11-05 The Johns Hopkins University Reconfigurable reflectarry for passive communications
US20220322321A1 (en) * 2021-04-01 2022-10-06 Qualcomm Incorporated Reconfigurablle intelligent surface (ris) information update
CN115243275A (zh) * 2021-04-25 2022-10-25 华为技术有限公司 一种通信方法及设备
CN115793301A (zh) * 2022-11-30 2023-03-14 南京大学 一种基于模加运算实现太赫兹波束调控的可编程超表面
WO2023035267A1 (fr) * 2021-09-13 2023-03-16 Lenovo (Beijing) Limited Configuration de multiples sous-réseaux pour un dispositif de surface intelligent reconfigurable

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10665953B1 (en) * 2019-03-18 2020-05-26 Lumotive LLC Tunable liquid crystal metasurfaces
US20200350691A1 (en) * 2019-05-03 2020-11-05 The Johns Hopkins University Reconfigurable reflectarry for passive communications
US20220322321A1 (en) * 2021-04-01 2022-10-06 Qualcomm Incorporated Reconfigurablle intelligent surface (ris) information update
CN115243275A (zh) * 2021-04-25 2022-10-25 华为技术有限公司 一种通信方法及设备
WO2023035267A1 (fr) * 2021-09-13 2023-03-16 Lenovo (Beijing) Limited Configuration de multiples sous-réseaux pour un dispositif de surface intelligent reconfigurable
CN115793301A (zh) * 2022-11-30 2023-03-14 南京大学 一种基于模加运算实现太赫兹波束调控的可编程超表面

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