WO2024071315A1

WO2024071315A1 - Method for producing mask, mask, method for forming deposited layer, and method for producing organic semiconductor element

Info

Publication number: WO2024071315A1
Application number: PCT/JP2023/035459
Authority: WO
Inventors: 博司川崎; 勝也小幡; 和彦相田
Original assignee: 大日本印刷株式会社
Priority date: 2022-09-29
Filing date: 2023-09-28
Publication date: 2024-04-04
Also published as: JP2024050156A

Abstract

This method for producing a mask comprises: a laminate preparation step for preparing a laminate including a laser-blocking layer that contains a plurality of light-transmitting holes and a resin layer that covers the laser-blocking layer; and a laser processing step for allowing laser light to enter the laminate toward the laser-blocking layer to form, in the resin layer, a plurality of first openings corresponding to the plurality of light-transmitting holes in the laser-blocking layer.

Description

MASK MANUFACTURING METHOD, MASK, METHOD FOR FORMING DEPOSITION LAYER, AND MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE

Embodiments of the present disclosure relate to a method for manufacturing a mask, a mask, a method for forming a deposition layer, and a method for manufacturing an organic semiconductor element.

As disclosed in JP2019-42762A, a deposition mask is known in which through-holes are formed in a resin film made of a resin such as polyimide. The deposition mask is used, for example, to form an organic layer and an electrode constituting an organic EL element on a substrate when manufacturing an organic EL display device. The through-holes in the deposition mask are formed by overlaying a laser processing mask on the resin film and irradiating the resin film with laser light through the laser processing mask. When forming through-holes over a wide range of the deposition mask, in order to irradiate the entire surface of the resin film with laser light by irradiating the entire surface with laser light in one laser light irradiation, it is necessary to widen the irradiation range of the laser light, which reduces the energy density of the laser light. For this reason, when forming through-holes over a wide range of the deposition mask, the resin film is irradiated with laser light multiple times while moving the irradiation position of the laser light on the resin film while keeping the irradiation range of the laser light small. The irradiation position of the laser light on the resin film is moved by placing the resin film on a stage and moving the stage or the irradiation head of the laser device. At this time, the position of the laser processing mask relative to the resin film is also moved according to the movement of the irradiation position.

When making a deposition mask for producing a high-definition display device, for example one with a pixel count of 3000 ppi or more, it is necessary to adjust the position of the laser processing mask relative to the resin film with high precision on the order of nanometers. As described above, if the position of the laser processing mask relative to the resin film is moved, or the irradiation position of the laser light on the resin film is moved, it becomes difficult to irradiate the laser light with the laser processing mask precisely aligned with the resin film. As a result, there is a risk that the positional precision of the through-holes in the deposition mask will decrease. This leads to a decrease in the positional precision of the organic layers and electrodes formed on the substrate using the deposition mask.

As a result, there is a need to improve the positional accuracy of the through holes in the mask.

A method for manufacturing a mask according to an embodiment of the present disclosure may include a laminate preparation step of preparing a laminate including a laser shielding layer formed of a metal material or a ceramic material, the laser shielding layer including a first surface, a second surface that is the surface opposite to the first surface, and a plurality of light-transmitting holes extending from the first surface to the second surface, and a resin layer covering the second surface of the laser shielding layer, and a laser processing step of forming a plurality of first openings in the resin layer corresponding to the plurality of light-transmitting holes in the laser shielding layer by irradiating the laminate with laser light toward the first surface of the laser shielding layer.

According to one embodiment of the present disclosure, the positional accuracy of the through holes in the mask can be improved.

FIG. 1 is a cross-sectional view illustrating an example of an organic device according to an embodiment of the present disclosure. FIG. 1 is a diagram showing an example of a deposition apparatus equipped with a mask. FIG. 2 is a plan view showing an example of a mask, illustrating one surface of the mask. 4 is a plan view showing the other surface of the mask shown in FIG. 3. 4 is a cross-sectional view taken along line VV of the mask shown in FIG. 3. FIG. 6 is a partially enlarged cross-sectional view showing a part of the mask shown in FIG. 5 . 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. 1A to 1C are diagrams for explaining a method for manufacturing a mask. FIG. 4 corresponds to FIG. 3 and shows a modified example of the mask. 18 is a cross-sectional view taken along line XVIII-XVIII of the mask shown in FIG. 17.

In this specification and drawings, unless otherwise specified, terms that refer to the materials that form the basis of a certain configuration, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

Unless otherwise specified, in this specification and drawings, terms that specify shapes and geometric conditions and their degrees, such as "parallel" and "orthogonal," and values of lengths and angles, are not bound by strict meanings and are interpreted to include the extent to which similar functions may be expected.

In this specification and drawings, unless otherwise specified, when a certain component or region or other component is described as being "on" or "under", "upper" or "lower" or "above" or "below" another component or region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is included between a certain component and the other component, that is, cases where the components are indirectly in contact. Furthermore, unless otherwise specified, the terms "on", "upper side", "upper", or "lower", or "lower", "lower" and "lower" may be used in the up-down direction.

In this specification and drawings, unless otherwise specified, identical parts or parts having similar functions are given the same or similar symbols, and repeated explanations may be omitted. In addition, the dimensional ratios of the drawings may differ from the actual ratios for the convenience of explanation, and some components may be omitted from the drawings.

Unless otherwise specified in this specification and drawings, one embodiment of this specification may be combined with other embodiments to the extent that no contradictions arise. In addition, other embodiments may be combined with each other to the extent that no contradictions arise.

Unless otherwise specified in this specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary to the extent that no contradiction occurs.

In one embodiment of this specification, an example will be described in which a mask is used to form an organic layer or electrodes on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality, or so-called VR, or augmented reality, or so-called AR. The mask of this embodiment may also be used to form electrodes of a display device other than an organic EL display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

A first aspect of the present disclosure is a method for manufacturing a mask, comprising:
a laminate preparation step of preparing a laminate including a laser shielding layer formed of a metal material or a ceramic material, the laser shielding layer including a first surface, a second surface that is a surface opposite to the first surface, and a plurality of light transmitting holes extending from the first surface to the second surface, and a resin layer that covers the second surface of the laser shielding layer;
a laser processing step of forming a plurality of first openings in the resin layer corresponding to the plurality of light transmitting holes of the laser shielding layer by irradiating a laser beam onto the laminate toward the first surface of the laser shielding layer;
The method for manufacturing a mask includes the steps of:

A second aspect of the present disclosure is a method for manufacturing a mask according to the first aspect described above, wherein the laser shielding layer includes at least one shielding portion including the plurality of light-transmitting holes and a surrounding portion that surrounds the shielding portion in a planar view, and the method for manufacturing the mask may include a shielding portion removal step for removing the shielding portion of the laser shielding layer.

A third aspect of the present disclosure is a method for manufacturing a mask according to the first or second aspect described above, wherein the resin layer may include a third surface facing the second surface of the laser shielding layer and a fourth surface that is the surface opposite to the third surface, and the method for manufacturing the mask may include a protective layer forming step of forming a protective layer that covers the fourth surface of the resin layer, and a protective layer removing step of removing the protective layer.

In a fourth aspect of the present disclosure, the method for manufacturing a mask according to any one of the first to third aspects described above may include a support layer preparation step of preparing a support layer having a fifth surface facing the first surface of the laser shielding layer and a sixth surface that is the surface opposite to the fifth surface and supporting the laminate, and a support frame formation step of forming at least one second opening in the support layer that overlaps with the plurality of light-transmitting holes of the laser shielding layer in a plan view.

A fifth aspect of the present disclosure is a method for manufacturing a mask according to the fourth aspect described above, wherein the laminate preparation step may include a step of forming the laser shielding layer on the support layer, a step of partially forming a first resist layer on the second surface of the laser shielding layer, a step of forming the plurality of light-transmitting holes in the laser shielding layer by etching the laser shielding layer from the side of the first resist layer, and a step of removing the first resist layer.

A sixth aspect of the present disclosure is a method for manufacturing a mask according to the fourth or fifth aspect described above, wherein the support layer may include a first layer forming the sixth surface and a second layer located between the first layer and the laser shielding layer, and the support frame forming step may include a step of partially forming a second resist layer on the sixth surface of the support layer, and a step of partially removing the first layer by etching the first layer from the side of the second resist layer.

A seventh aspect of the present disclosure is a method for manufacturing a mask according to the sixth aspect described above, wherein the support frame forming step may include a step of partially removing the second layer after a step of partially removing the first layer.

An eighth aspect of the present disclosure is a method for manufacturing a mask according to any one of the fourth to seventh aspects described above, wherein the support layer may contain an inorganic material.

A ninth aspect of the present disclosure is a method for manufacturing a mask according to any one of the fourth to eighth aspects described above, wherein the support layer may contain a metal material.

A tenth aspect of the present disclosure is a method for manufacturing a mask according to any one of the sixth to ninth aspects described above, wherein the first layer may contain a non-metallic inorganic material.

An eleventh aspect of the present disclosure is a method for manufacturing a mask according to any one of the sixth to ninth aspects described above, wherein the first layer may contain a non-metallic inorganic material, and the second layer may contain a metallic material.

A twelfth aspect of the present disclosure is a method for manufacturing a mask according to any one of the first to eleventh aspects described above, wherein the laser shielding layer may contain titanium nitride, nickel, or copper.

A thirteenth aspect of the present disclosure is a method for manufacturing a mask according to any one of the first to twelfth aspects described above, in which the laser shielding layer may be formed by a vacuum deposition method or a plating method.

A fourteenth aspect of the present disclosure is a mask, comprising:
a resin layer including a third surface and a fourth surface that is a surface opposite to the third surface, the resin layer including at least one resin mask portion including a plurality of first openings extending from the third surface to the fourth surface, and a resin surrounding portion surrounding the resin mask portion in a plan view;
a laser shielding layer formed of a metal material or a ceramic material, the laser shielding layer including a second surface facing the third surface of the resin layer, and a first surface being a surface opposite to the second surface, and including at least one peripheral portion overlapping the resin peripheral portion of the resin layer in a plan view;
a support frame including a fifth surface facing the first surface of the laser shielding layer, a sixth surface being a surface opposite to the fifth surface, and at least one second opening extending from the sixth surface to the fifth surface and overlapping with the resin mask portion of the resin layer in a plan view;
Equipped with
The support frame is a mask that includes an inorganic material.

A fifteenth aspect of the present disclosure is a mask according to the fourteenth aspect described above, wherein the support frame may include a metal material.

A sixteenth aspect of the present disclosure is a mask according to the fourteenth or fifteenth aspect described above, wherein the support frame may include a first layer forming the sixth surface and a second layer located between the first layer and the laser shielding layer, and the first layer may include a non-metallic inorganic material.

A seventeenth aspect of the present disclosure is a mask according to the sixteenth aspect described above, wherein the second layer may include a metallic material.

The eighteenth aspect of the present disclosure is a mask according to any one of the fourteenth to seventeenth aspects described above, wherein the laser shielding layer may contain titanium nitride, nickel, or copper.

A nineteenth aspect of the present disclosure is a mask according to any one of the fourteenth to eighteenth aspects described above, wherein each of the first openings of the resin layer may be tapered from the third surface of the resin layer toward the fourth surface, and each of the second openings of the support frame may expand between the fifth surface and the sixth surface of the support frame.

A twentieth aspect of the present disclosure is a mask according to any one of the fourteenth to nineteenth aspects described above, wherein the laser shielding layer may include a shielding portion that overlaps the second opening of the support frame in a planar view, and the shielding portion may include a plurality of light-transmitting holes that each overlap the plurality of first openings of the resin layer in a planar view.

A twenty-first aspect of the present disclosure is a method for forming a deposition layer, comprising:
A method for forming a deposition layer, comprising a step of forming a plurality of deposition layers on a substrate using the mask according to any one of the fourteenth to twentieth aspects described above.

A twenty-second aspect of the present disclosure is a method for producing an organic semiconductor device, comprising:
A method for manufacturing an organic semiconductor device, comprising a step of forming a plurality of deposition layers on a substrate using the mask according to any one of the fourteenth to twentieth aspects described above.

One embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

First, we will explain an organic device 100 that has an organic layer formed using a mask. Figure 1 is a cross-sectional view showing an example of an organic device 100.

The organic device 100 includes a substrate and a plurality of elements 115 arranged along the in-plane direction of the substrate. The elements 115 are, for example, organic semiconductor elements. The elements 115 correspond to, for example, pixels. In the following description, a view along the normal direction of the surface of an underlying element such as a substrate is also referred to as a planar view.

The organic device 100 may include a substrate 110, a plurality of first electrodes 120, a plurality of organic layers 130, and a second electrode 140. The substrate 110 includes a first surface 111 and a second surface 112. The second surface 112 is located opposite the first surface 111.

The multiple first electrodes 120 may be located on the first surface 111. The multiple organic layers 130 may be located on the first electrodes 120. The second electrode 140 may be located on the organic layer 130. The second electrode 140 may extend so as to overlap the multiple first electrodes 120 in a planar view. The element 115 is configured by a laminated structure including the first electrode 120, the organic layer 130, and the second electrode 140. The element 115 can achieve some function by applying a voltage between the first electrode 120 and the second electrode 140, or by causing a current to flow between the first electrode 120 and the second electrode 140.

As shown in FIG. 1, the multiple organic layers 130 may include multiple first organic layers 130A and multiple second organic layers 130B. Although not shown, the multiple organic layers 130 may include multiple third organic layers. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. When describing a configuration common to the first organic layer 130A, the second organic layer 130B, and the third organic layer, the term and symbol "organic layer 130" are used.

As shown in FIG. 1, the multiple first electrodes 120 may include multiple firstA electrodes 120A and multiple firstB electrodes 120B. Although not shown, the multiple first electrodes 120 may include multiple firstC electrodes. The firstA electrode 120A overlaps the first organic layer 130A in a planar view. The firstB electrode 120B overlaps the second organic layer 130B in a planar view. The firstC electrode overlaps the third organic layer in a planar view. When describing a configuration common to the firstA electrode 120A, the firstB electrode 120B, and the firstC electrode, the term and symbols "first electrode 120" are used.

Each element 115 may include at least one first sub-element 115A and at least one second sub-element 115B. Although not shown, each element 115 may include at least one third sub-element. The first sub-element 115A includes a first A electrode 120A, a first organic layer 130A, and a second electrode 140. The second sub-element 115B includes a first B electrode 120B, a second organic layer 130B, and a second electrode 140. The third sub-element includes a first C electrode, a third organic layer, and a second electrode 140.

The element formed by using the mask may be the organic layer 130 or the second electrode 140. The element formed by using the mask is also called a deposition layer.

The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120 in a planar view.

Next, a method for forming a deposition layer such as the organic layer 130 by a deposition method will be described. FIG. 2 is a diagram showing a deposition device 10. The deposition device 10 performs a deposition process for depositing a deposition material on a substrate 110.

As shown in FIG. 2, the deposition apparatus 10 may include therein a deposition source 6, a heater 8, and a mask 20. The deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10. The deposition source 6 is, for example, a crucible, and contains a deposition material 7 such as an organic material or a metallic material. The heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere. The mask 20 is disposed to face the crucible 6.

2, the mask 20 is placed in the deposition apparatus 10 so as to face the first surface 111 of the substrate 110. The mask 20 may be in contact with the first surface 111 of the substrate 110. The mask 20 has a plurality of through holes 21 arranged regularly in a plan view. The through holes 21 allow the deposition material 7 coming from the deposition source 6 to pass through. Therefore, the shape and pattern of the through holes 21 are reflected in the shape and pattern of the layer of the deposition material 7 formed on the first surface 111 of the substrate 110. For example, when the mask 20 is used to form an organic layer in an organic EL display, the shape and pattern of the through holes 21 are reflected in the shape and pattern of the organic layer.

2, the deposition device 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 contains a metal material, the magnet 5 can attract the mask 20 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 20 and the substrate 110. This can suppress the occurrence of a shadow in the deposition process. In this application, a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the through hole 21 is smaller than the thickness of the organic layer 130 formed at the center of the through hole 21. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.

Next, the mask 20 will be described in detail. Figures 3 and 4 are plan views showing an example of the mask 20. Figure 3 shows the surface of the mask 20 facing the deposition source 6. Also, Figure 4 shows the surface of the mask 20 facing the substrate 110. Also, Figure 5 is a cross-sectional view showing a cross section along line V-V of the mask 20 shown in Figures 3 and 4.

The mask 20 includes at least one through-hole group 23 including a plurality of through-holes 21. One through-hole group 23 corresponds to one organic device 100. For example, the plurality of first organic layers 130A included in one organic device 100 are composed of deposition material that has passed through the plurality of through-holes 21 of one through-hole group 23. The mask 20 shown in Figures 3 to 5 is a mask for simultaneously forming deposition layers for a plurality of organic devices 100, and includes a plurality of through-hole groups 23.

5, the mask 20 includes a resin layer 30 in which a plurality of first openings 34 are formed, a support frame 50 that supports the resin layer 30, and a laser shielding layer 40 that is located between the resin layer 30 and the support frame 50. In the following description, the surface of the laser shielding layer 40 that faces the support frame 50 is referred to as the first surface 41, and the surface of the laser shielding layer 40 that faces the resin layer 30 is referred to as the second surface 42. The surface of the resin layer 30 that faces the laser shielding layer 40 is referred to as the third surface 31, and the surface of the resin layer 30 opposite the third surface 31 is referred to as the fourth surface 32. The surface of the support frame 50 that faces the laser shielding layer 40 is referred to as the fifth surface 51, and the surface of the support frame 50 opposite the fifth surface 51 is referred to as the sixth surface 52.

The resin layer 30 includes a resin mask portion 36 in which a plurality of first openings 34 are formed, and a resin surrounding portion 37 that surrounds the resin mask portion 36 in a plan view of the resin layer 30. In the illustrated example, the resin layer 30 includes a plurality of resin mask portions 36. Each resin mask portion 36 is surrounded by the resin surrounding portion 37. Each resin mask portion 36 corresponds to one organic device 100. The third surface 31 of each resin mask portion 36 forms a part of the surface of the mask 20 that faces the deposition source 6. The fourth surface 32 of the resin layer 30 forms the surface of the mask 20 that faces the first surface 111 of the substrate 110.

Each first opening 34 of the resin mask portion 36 penetrates the resin layer 30. In other words, the first openings 34 reach from the third surface 31 to the fourth surface 32. In the illustrated example, the first openings 34 form the through-holes 21 of the mask 20. The multiple first openings 34 of one resin mask portion 36 form one first opening group 35. In the illustrated example, one first opening group 35 of the resin layer 30 forms one through-hole group 23 of the mask 20.

As described above, the shape and pattern of the through holes 21 are reflected in the shape and pattern of the layer of deposition material 7 formed on the substrate 110. Therefore, the shape and pattern of the first openings 34 correspond to the shape and pattern of the deposition layer formed on the substrate 110.

The material of the resin layer 30 is not particularly limited. The material of the resin layer 30 may be appropriately selected from conventionally known resin materials. Preferably, the material of the resin layer 30 is a material that allows the formation of a high-definition first opening 34 by laser processing. Preferably, the material of the resin layer 30 is a material that has a small dimensional change rate and moisture absorption rate due to heat or time. Preferably, the material of the resin layer 30 is a lightweight material. Such materials include polyimide resin, polyamide resin, polyamideimide resin, polyester resin, polyethylene resin, polyvinyl alcohol resin, polypropylene resin, polycarbonate resin, polystyrene resin, polyacrylonitrile resin, ethylene vinyl acetate copolymer resin, ethylene-vinyl alcohol copolymer resin, ethylene-methacrylic acid copolymer resin, polyvinyl chloride resin, polyvinylidene chloride resin, cellophane, ionomer resin, etc. Among the materials exemplified above, a resin material having a thermal expansion coefficient of 16 ppm/°C or less is preferable. Among the materials exemplified above, a resin material having a moisture absorption rate of 1.0% or less is preferable. Among the materials listed above, resin materials that satisfy both the thermal expansion coefficient and moisture absorption rate conditions are particularly preferred. By using these resin materials to form the resin layer, the dimensional accuracy of the first opening can be improved, and the dimensional change rate and moisture absorption rate due to heat and time can be reduced.

There is no particular limitation on the thickness T30 of the resin layer 30, but it is preferably 0.2 μm or more and 5.0 μm or less. By setting the thickness T30 of the resin layer 30 within this range, the risk of defects such as pinholes and deformations occurring in the resin layer 30 can be reduced, and the occurrence of shadows can be effectively suppressed. In particular, by setting the thickness T30 of the resin layer to 0.5 μm or more and 4.0 μm or less, more preferably 0.8 μm or more and 3.5 μm or less, and even more preferably 1.0 μm or more and 3.0 μm or less, the influence of shadows when forming a deposition layer in a high-definition pattern for an organic EL display having a pixel count of 3000 ppi or more can be more effectively reduced. Therefore, the thickness T30 of the resin layer 30 may be, for example, 0.2 μm or more, 0.5 μm or more, 0.8 μm or more, or 1.0 μm or more. The thickness T30 may be, for example, 3.0 μm or less, 3.5 μm or less, 4.0 μm or less, or 5.0 μm or less. The range of the thickness T30 may be determined by a first group consisting of 0.2 μm, 0.5 μm, 0.8 μm, and 1.0 μm, and/or a second group consisting of 3.0 μm, 3.5 μm, 4.0 μm, and 5.0 μm. The range of the thickness T30 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the thickness T30 may be determined by a combination of any two of the values included in the first group described above. The range of the thickness T30 may be determined by a combination of any two of the values included in the second group described above. The thickness T30 may be, for example, 0.2 μm or more and 5.0 μm or less, 0.2 μm or more and 4.0 μm or less, 0.2 μm or more and 3.5 μm or less, 0.2 μm or more and 3.0 μm or less, 0.2 μm or more and 1.0 μm or less, 0.2 μm or more and 0.8 μm or less, 0.2 μm or more and 0.5 μm or less, 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 4.0 μm or less, 0.5 μm or more and 3.5 μm or less, 0.5 μm or more and 3.0 μm or less, 0.5 μm or more and 1.0 μm or less, 0.5 μm or more and 0.8 μm or less, or 0.8 μm or more and 5.0 μm or less. , 0.8 μm or more and 4.0 μm or less, 0.8 μm or more and 3.5 μm or less, 0.8 μm or more and 3.0 μm or less, 0.8 μm or more and 1.0 μm or less, 1.0 μm or more and 5.0 μm or less, 1.0 μm or more and 4.0 μm or less, 1.0 μm or more and 3.5 μm or less, 1.0 μm or more and 3.0 μm or less, 3.0 μm or more and 5.0 μm or less, 3.0 μm or more and 4.0 μm or less, 3.0 μm or more and 3.5 μm or less, 3.5 μm or more and 5.0 μm or less, 3.5 μm or more and 4.0 μm or less, or 4.0 μm or more and 5.0 μm or less.

As can be seen from FIG. 5, each first opening 34 of the resin mask portion 36 is tapered from the third surface 31 to the fourth surface 32. In other words, the dimensions of each first opening 34 along the third surface 31 and the fourth surface 32 gradually decrease from the third surface 31 to the fourth surface 32. This makes it possible to suppress the occurrence of shadows near the wall surfaces of the first openings 34. The tapered first openings 34 can be formed by irradiating the resin layer 30 with laser light, as described below. The dimensions of each first opening 32 on the fourth surface 32 correspond to the dimensions of the deposition layer corresponding to that first opening 32. In the illustrated example, the dimensions of each first opening 32 on the third surface 31 are larger than the dimensions of the deposition layer corresponding to that first opening 32.

6 is an enlarged view of a portion of the resin mask portion 36 shown in FIG. 5. In FIG. 6, the symbol θ represents the angle between the fourth surface 32 and the wall surface of the first opening 34. The angle θ may be, for example, 50° or more, 55° or more, 60° or more, or 65° or more. The angle θ is less than 90°, for example, 75° or less, 80° or less, or 85° or less. The range of the angle θ may be determined by a first group consisting of 50°, 55°, 60°, and 65°, and/or a second group consisting of 75°, 80°, 85°, and 90°. The range of the angle θ may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the angle θ may be determined by a combination of any two of the values included in the first group described above. The range of the angle θ may be determined by a combination of any two of the values included in the second group described above. The angle θ may be, for example, 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 75°, 50° or more and less than 65°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 75°, 55° or more and less than 65°, 55° or more and less than 60°, or 60° or more and less than 90°. , 60° or more and 85° or less, 60° or more and 80° or less, 60° or more and 75° or less, 60° or more and 65° or less, 65° or more and less than 90°, 65° or more and 85° or less, 65° or more and 80° or less, 65° or more and 75° or less, 75° or more and less than 90°, 75° or more and 85° or less, 75° or more and 80° or less, 80° or more and less than 90°, 80° or more and 85° or less, 85° or more and less than 90°.

As shown in FIG. 5, the laser shielding layer 40 is provided on the third surface 31 of the resin layer 30. The second surface 42 of the laser shielding layer 40 faces the third surface 31 of the resin layer 30. The laser shielding layer 40 covers at least a portion of the third surface 31 of the resin peripheral portion 37 of the resin layer 30. In the illustrated example, the laser shielding layer 40 covers the entire third surface 31 of the resin peripheral portion 37 of the resin layer 30. In the illustrated example, the laser shielding layer 40 has at least one third opening 48 that overlaps the resin mask portion 36 of the resin layer 30 in a planar view. The third opening 48 penetrates the laser shielding layer 40. In other words, the laser shielding layer 40 extends from the first surface 41 to the second surface 42. In the illustrated example, the laser shielding layer 40 has a plurality of third openings 48 that overlap the plurality of resin mask portions 36 of the resin layer 30 in a planar view. When viewed in a direction from the laser shielding layer 40 toward the resin layer 30, the laser shielding layer 40 surrounds each of the multiple resin mask portions 36.

Hereinafter, the portion of the laser shielding layer 40 that overlaps with the resin peripheral portion 37 of the resin layer 30 in a plan view of the laser shielding layer 40 is also referred to as the peripheral portion 47. The laser shielding layer 40 includes at least one peripheral portion 47. In the example shown in Figures 3 to 5, the laser shielding layer 40 is made of the peripheral portion 47.

The laser shielding layer 40 is formed of a material capable of shielding laser light. The laser shielding layer 40 is made of, for example, a metal material, ceramics, or other inorganic compounds. The laser shielding layer 40 is formed of, for example, a ceramic material containing titanium nitride, or a metal material containing nickel or copper. Specific examples of metal materials containing nickel include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, and a Super Invar material containing 30% by mass or more and 34% by mass or less of nickel and further containing cobalt.
The inorganic elements contained in the laser shielding layer 40 are silver (Ag), aluminum (Al), gold (Au), cobalt (Co), chromium (Cr), iron (Fe), germanium (Ge), iridium (Ir), manganese (Mn), molybdenum (Mo), niobium (Nb), palladium (Pd), ruthenium (Ru), antimony (Sb), silicon (Si), tin (Sn), tantalum (Ta), titanium (Ti), tungsten (W), etc. The inorganic layer 40 may contain a compound or alloy of these inorganic elements. The inorganic layer 40 may contain two or more of these inorganic elements. The inorganic layer 40 may contain two or more of these inorganic elements, compounds or alloys. Two or more kinds of inorganic elements, two or more kinds of compounds or alloys may be contained in the inorganic layer 40 in a mixed state, or may be contained in the inorganic layer 40 in a stacked state.
Compounds or alloys of inorganic elements include aluminum-neodymium alloy (Al-Nd), aluminum oxide (Al ₂ O ₃ ), aluminum copper alloy (Al-Cu), aluminum nitride (AlN), aluminum silicon compound (AlSi), aluminum silicon alloy (Al-Si), aluminum silicon copper alloy (Al-Si-Cu), boron nitride (BN), cerium oxide (CeO ₂ ), chromium oxide (Cr ₂ O ₃ ), indium tin oxide (ITO), indium zinc oxide (IZO), magnesium (Mg), magnesium oxide (MgO), molybdenum oxide (MoO ₃ ), molybdenum sulfide (MoS), nickel-chromium alloy (Ni-Cr), nickel-iron compound (NiFe), polycrystalline silicon (Poly-Si), platinum (Pt), lead zirconate titanate (PZT), silicon nitride (Si ₃ N ₄ ), silicon carbide (SiC), silicon germanium alloy (Si-Ge), silicon nitride (SiN), silicon dioxide (SiO ₂ ), silicon oxynitride (SiON), _tantalum pentoxide ( _Ta2O5 ), tantalum nitride (TaN), titanium carbide (TiC), titanium-nickel alloy or compound (Ti-Ni), titanium dioxide ( _TiO2 ), titanium-tungsten alloy or compound (Ti-W), tungsten-silicon alloy or compound (W-Si ₎ _, yttrium oxide ( _Y2O3 ), YBCO ( _YBa2Cu3O7 ), zinc (Zn), zinc oxide (ZnO), zirconium nitride (ZrN), zirconium dioxide ( _ZrO2 ) _, etc.

There is no particular limitation on the thickness T40 of the laser shielding layer 40. The thickness T40 of the laser shielding layer 40 is, for example, 0.5 μm or more. In order to perform laser ablation processing on the laser shielding layer 40 formed of a ceramic material or a metal material, the fluence of the laser light incident on the laser shielding layer 40 needs to be, for example, 4 J/m ² or more. In contrast, in order to process the resin layer 30, the fluence of the laser light incident on the resin layer 30 may be about 0.4 J/m ² , which is 1/10 or less of the above-mentioned fluence. Therefore, if the thickness of the laser shielding layer 40 is 0.5 μm or more, the risk of the laser shielding layer 40 being broken or deformed by the laser light L in the laser processing step described later is effectively reduced. In order to further effectively reduce the risk of the laser shielding layer 40 being broken or deformed in the laser processing step described later, the thickness T40 is more preferably 1.0 μm or more, even more preferably 1.2 μm or more, and particularly preferably 1.5 μm or more. On the other hand, from the viewpoint of forming the first opening 34 of the resin layer 30 with high precision in the laser processing step described later, the thickness T40 of the laser shielding layer 40 is preferably 10.0 μm or less, more preferably 8.0 μm or less, more preferably 7.0 μm or less, and particularly preferably 6.0 μm or less. Therefore, the thickness T40 may be, for example, 0.5 μm or more, 1.0 μm or more, 1.2 μm or more, or 1.5 μm or more. The thickness T40 may be, for example, 6.0 μm or less, 7.0 μm or less, 8.0 μm or less, or 10.0 μm or less. The range of the thickness T40 may be determined by a first group consisting of 0.5 μm, 1.0 μm, 1.2 μm, and 1.5 μm, and/or a second group consisting of 6.0 μm, 7.0 μm, 8.0 μm, and 10.0 μm. The range of thickness T40 may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. The range of thickness T40 may be determined by a combination of any two of the values included in the above-mentioned first group. The range of thickness T40 may be determined by a combination of any two of the values included in the above-mentioned second group. The thickness T40 may be, for example, 0.5 μm or more and 10.0 μm or less, 0.5 μm or more and 8.0 μm or less, 0.5 μm or more and 7.0 μm or less, 0.5 μm or more and 6.0 μm or less, 0.5 μm or more and 1.5 μm or less, 0.5 μm or more and 1.2 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 10.0 μm or less, 1.0 μm or more and 8.0 μm or less, 1.0 μm or more and 7.0 μm or less, 1.0 μm or more and 6.0 μm or less, 1.0 μm or more and 1.5 μm or less, 1.0 μm or more and 1.2 μm or less, or 1.2 μm or more and 10.0 μm or less. Alternatively, it may be 1.2 μm or more and 8.0 μm or less, 1.2 μm or more and 7.0 μm or less, 1.2 μm or more and 6.0 μm or less, 1.2 μm or more and 1.5 μm or less, 1.5 μm or more and 10.0 μm or less, 1.5 μm or more and 8.0 μm or less, 1.5 μm or more and 7.0 μm or less, 1.5 μm or more and 6.0 μm or less, 6.0 μm or more and 10.0 μm or less, 6.0 μm or more and 8.0 μm or less, 6.0 μm or more and 7.0 μm or less, 7.0 μm or more and 10.0 μm or less, 7.0 μm or more and 8.0 μm or less, or 8.0 μm or more and 10.0 μm or less.

The third opening 48 of the laser shielding layer 40 may expand between the first surface 41 and the second surface 42. In other words, the wall surface of the third opening 48 may have a recess that is recessed in the surface direction of the laser shielding layer 40. Such a third opening 48 may be formed due to side etching when etching the laser shielding layer 40, as described below.

The support frame 50 is provided on the first surface 41 of the laser shielding layer 40. The fifth surface 51 of the support frame 50 faces the first surface 41 of the laser shielding layer 40. The sixth surface 52 of the support frame 50 forms part of the surface of the mask 20 facing the deposition source 6. This support frame 50 supports the resin layer 30 and the laser shielding layer 40.

In the illustrated example, the support frame 50 supports the resin layer 30 in a state of being pulled in the direction of its surface so that the resin layer 30 does not bend. The support frame 50 covers at least a portion of the third surface 31 of the resin peripheral portion 37 of the resin layer 30. In the illustrated example, the support frame 50 covers the entire third surface 31 of the resin peripheral portion 37 of the resin layer 30. The support frame 50 also has at least one second opening 54 that overlaps the resin mask portion 36 of the resin layer 30 in a planar view. The second opening 54 penetrates the support frame 50. In other words, the second opening 54 extends from the sixth surface 52 to the fifth surface 51. In the illustrated example, the support frame 50 has a plurality of second openings 54 that overlap the plurality of resin mask portions 36 of the resin layer 30 in a planar view. When viewed in a direction from the support frame 50 toward the resin layer 30, the support frame 50 surrounds each of the plurality of resin mask portions 36. In addition, the second opening 54 overlaps with the third opening 48 of the laser shielding layer 40 in a plan view. Since the second opening 54 of the support frame 50 and the third opening 48 of the laser shielding layer 40 overlap with the resin mask portion 36 in a plan view, the third surface 31 of the resin mask portion 36 is exposed in the second opening 54 and the third opening 48 when the mask 20 is viewed in a direction from the support frame 50 toward the resin layer 30.

The support frame 50 may include multiple layers. In the example shown in FIG. 5, the support frame 50 includes a first layer 55 forming the sixth surface 52 and a second layer 56 located between the first layer 55 and the laser shielding layer 40. In the illustrated example, the second layer 56 forms the fifth surface 51 of the support frame 50. In other words, the second layer 56 and the laser shielding layer 40 are adjacent to each other. Also, in the illustrated example, the second layer 56 is formed on the first layer 55. In other words, the first layer 55 and the second layer 56 are adjacent to each other. When the support frame 50 includes the first layer 55 and the second layer 56, the first layer 55 and the second layer 56 include a first layer opening 54a and a second layer opening 54b corresponding to the second opening 54, respectively. In this case, the first layer opening 54a and the second layer opening 54b are connected to each other. The first layer opening 54a and the second layer opening 54b form a second opening 54 that penetrates the support frame 50.

There are no particular limitations on the material of the support frame 50. The support frame 50 is formed, for example, from a material containing an inorganic substance. Metal materials with high rigidity, such as SUS, Invar material, and ceramic materials, may also be used as the material of the support frame 50. A metal support frame 50 is preferable in that it is less susceptible to deformation, etc.

When the support frame 50 includes a first layer 55 and a second layer 56, the first layer 55 may include a non-metallic inorganic material. The second layer 56 may include a metallic material. As described below, when the first layer opening 54a is formed by etching the first layer 55 with an etchant, the second layer 56 may be formed of a material that is resistant to the etchant. In this case, the second layer 56 may function as a stopper layer that stops the etching of the first layer 55. The second layer 56 may include aluminum, an aluminum alloy, titanium, or a titanium alloy.

There are no particular limitations on the thickness T50 of the support frame 50. Preferably, the thickness T50 of the support frame 50 is approximately 0.3 mm or more and 70.0 mm or less in terms of rigidity, etc.

5, when the support frame 50 includes a first layer 55 and a second layer 56, the thickness T55 of the first layer 55 may be, for example, 20 μm or more, 100 μm or more, 500 μm or more, or 1000 μm or more. The thickness T55 may be, for example, 2000 μm or less, 3000 μm or less, 4000 μm or less, or 5000 μm or less. The range of the thickness T55 may be determined by a first group consisting of 20 μm, 100 μm, 500 μm, and 1000 μm, and/or a second group consisting of 2000 μm, 3000 μm, 4000 μm, and 5000 μm. The range of the thickness T55 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of thickness T55 may be determined by any combination of two values included in the first group described above. The range of thickness T55 may be determined by any combination of two values included in the second group described above. The thickness T55 may be, for example, 20 μm or more and 5000 μm or less, 20 μm or more and 4000 μm or less, 20 μm or more and 3000 μm or less, 20 μm or more and 2000 μm or less, 20 μm or more and 1000 μm or less, 20 μm or more and 500 μm or less, 20 μm or more and 100 μm or less, 100 μm or more and 5000 μm or less, 100 μm or more and 4000 μm or less, 100 μm or more and 3000 μm or less, 100 μm or more and 2000 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 500 μm or less, 500 μm or more and 5000 μm or less, or 500 μm or more and 5000 μm or less. It may be 4000 μm or less, 500 μm or more 3000 μm or less, 500 μm or more 2000 μm or less, 500 μm or more 1000 μm or less, 1000 μm or more 5000 μm or less, 1000 μm or more 4000 μm or less, 1000 μm or more 3000 μm or less, 1000 μm or more 2000 μm or less, 2000 μm or more 5000 μm or less, 2000 μm or more 4000 μm or less, 2000 μm or more 3000 μm or less, 3000 μm or more 5000 μm or less, 3000 μm or more 4000 μm or less, or 4000 μm or more 5000 μm or less.

In this case, the thickness T56 of the second layer 56 is not particularly limited as long as it can prevent the laser shielding layer 40 and the resin layer 30 from being etched in the process of etching the first layer 55. For example, the thickness T56 may be smaller than the thickness of the laser shielding layer 40 and the resin layer 30, or may be greater than or equal to the thickness of the laser shielding layer 40 and the resin layer 30. The thickness T56 may be, for example, 0.05 μm or more, 0.10 μm or more, 0.15 μm or more, or 0.20 μm or more. The thickness T56 may be, for example, 0.5 μm or less, 1.0 μm or less, 2.0 μm or less, or 5.0 μm or less. The range of the thickness T56 may be determined by a first group consisting of 0.05 μm, 0.10 μm, 0.15 μm, and 0.20 μm, and/or a second group consisting of 0.5 μm, 1.0 μm, 2.0 μm, and 5.0 μm. The range of the thickness T56 may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group. The range of the thickness T56 may be determined by a combination of any two of the values included in the above-mentioned first group. The range of the thickness T56 may be determined by a combination of any two of the values included in the above-mentioned second group. The thickness T56 may be, for example, 0.05 μm or more and 5.0 μm or less, 0.05 μm or more and 2.0 μm or less, 0.05 μm or more and 1.0 μm or less, 0.05 μm or more and 0.5 μm or less, 0.05 μm or more and 0.20 μm or less, 0.05 μm or more and 0.15 μm or less, 0.05 μm or more and 0.10 μm or less, 0.10 μm or more and 5.0 μm or less, 0.10 μm or more and 2.0 μm or less, 0.10 μm or more and 1.0 μm or less, 0.10 μm or more and 0.5 μm or less, 0.10 μm or more and 0.20 μm or less, 0.10 μm or more and 0.15 μm or less, or 0.15 μm or more and 5 0 μm or less, 0.15 μm or more and 2.0 μm or less, 0.15 μm or more and 1.0 μm or less, 0.15 μm or more and 0.5 μm or less, 0.15 μm or more and 0.20 μm or less, 0.20 μm or more and 5.0 μm or less, 0.20 μm or more and 2.0 μm or less, 0.20 μm or more and 1.0 μm or less, 0.20 μm or more and 0.5 μm or less, 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 5.0 μm or less, 1.0 μm or more and 2.0 μm or less, or 2.0 μm or more and 5.0 μm or less. The higher the resistance of the second layer 56 to the etchant used for the first layer 55, the smaller the thickness T56 can be.

Each second opening 54 of the support frame 50 may be expanded between the fifth surface 51 and the sixth surface 52. In other words, the wall surface of the second opening 54 may have a recess recessed in the surface direction of the mask 20. As described below, such a second opening 54 may be formed due to side etching when etching the support layer 57 formed of the material forming the support frame 50. When the support frame 50 includes a first layer 55 and a second layer 56, the first layer opening 54a may be expanded between the sixth surface 52 and the surface facing the second layer 56. Also, the second layer opening 54b may be expanded between the surface facing the first layer 55 and the surface facing the laser shielding layer 40.

The mask 20 does not have to include the support frame 50.

The thickness of each layer, the dimensions of each component, the spacing, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

Next, a method for manufacturing the mask 20 will be described. First, a support layer preparation step is performed. Specifically, as shown in FIG. 7, a support layer 57 that supports the laser shielding layer 40 and the resin layer 30 is prepared. The support layer 57 is formed of a material that forms the support frame 50. In the illustrated example, a base material that constitutes the first layer 55 is first prepared. Next, a second layer 56 is formed on one surface of the first layer 55. The second layer 56 may be formed on the entire surface of the one surface of the first layer 55. The second layer 56 is formed of a material that is resistant to the etchant for the first layer 55. The second layer 56 may be formed by a vacuum film formation method such as a sputtering method. In this manner, the support layer 57 is formed.

Then, a laminate preparation process is performed. Specifically, a laminate 25 including a laser shielding layer 40 and a resin layer 30 is prepared. In the illustrated example, first, as shown in FIG. 8, a laser shielding layer 40 is formed on a fifth surface 51 of a support layer 57. The laser shielding layer 40 may be formed on the entire surface of the fifth surface 51. The laser shielding layer 40 may be formed by, for example, a vacuum film formation method such as a sputtering method or a plating method. The laser shielding layer 40 has a first surface 41 facing the support layer 57 and a second surface 42 that is the surface opposite to the first surface 41.

Subsequently, as shown in FIG. 9, a first resist layer 60 is partially formed on the second surface 42 of the laser shielding layer 40. The first resist layer 60 has a plurality of first resist openings 61. The first resist openings 61 are formed corresponding to the plurality of first openings 34 of the resin layer 30. In other words, the shape and pattern of the first resist openings 61 correspond to the shape and pattern of the first openings 34. Furthermore, the dimensions of each first resist opening 61 correspond to the dimensions of the corresponding first opening 34 on the third surface. The first resist layer 60 may be formed by a known method. Specifically, a first resist layer material, which is a material for forming the first resist layer 60, is prepared and this is partially applied on the second surface 42 of the laser shielding layer 40. Next, the first resist layer material on the second surface 42 is exposed to light, and the first resist layer material is developed. As a result, the first resist layer 60 having a plurality of first resist openings 61 is formed.

10, the laser shielding layer 40 is etched from the side of the first resist layer 60 to partially remove the laser shielding layer 40. The etching of the laser shielding layer 40 may be performed by dry etching using an etching gas, or by wet etching using an etching solution. The etching gas and the etching solution are examples of the above-mentioned etchants. By partially removing the laser shielding layer 40, a plurality of light-transmitting holes 44 are formed in the laser shielding layer 40. Each light-transmitting hole 44 extends from the first surface 41 to the second surface 42. As described above, the first resist opening 61 is formed corresponding to the plurality of first openings 34 of the resin layer 30, so that the plurality of light-transmitting holes 44 are formed corresponding to the plurality of first openings 34. In other words, the shape and pattern of the light-transmitting hole 44 correspond to the shape and pattern of the first opening 34. As described above, the shape and pattern of the first opening 34 correspond to the shape and pattern of the deposition layer formed on the substrate 110. Therefore, the shape and pattern of the light-transmitting holes 44 correspond to the shape and pattern of the deposition layer formed on the substrate 110. In addition, the size of each light-transmitting hole 44 in the plan view of the laser shielding layer 40 corresponds to the size of the corresponding first opening 34 on the third surface 31. As will be understood from FIG. 16A, which will be referred to later, the size of each light-transmitting hole 44 in the plan view of the laser shielding layer 40 is larger than the size of the corresponding first opening 34 on the fourth surface 32. Therefore, the size of each light-transmitting hole 44 in the plan view of the laser shielding layer 40 is larger than the size of the deposition layer corresponding to the corresponding first opening 34.

10, the laser shielding layer 40 includes a shielding portion 46 that covers the third surface 31 of the resin mask portion 36, and a surrounding portion 47 that surrounds the shielding portion 46 in a plan view of the laser shielding layer 40. In the illustrated example, the laser shielding layer 40 includes a plurality of shielding portions 46 corresponding to the plurality of resin mask portions 36. Each shielding portion 46 includes a plurality of light-transmitting holes 44. The plurality of light-transmitting holes 44 of each shielding portion 46 form a third opening group 45. The third opening group 45 corresponds to the first opening group 35 of the resin layer 30 described above. After the light-transmitting holes 44 are formed in the laser shielding layer 40, the first resist layer 60 is removed from the laser shielding layer 40. The first resist layer 60 can be removed, for example, using a resist processing liquid.

Subsequently, as shown in FIG. 11, a resin layer 30 is formed on the second surface 42 of the laser shielding layer 40. The resin layer 30 may be formed by a coating method such as spin coating. The resin layer 30 is formed so as to cover the second surface 42 of the laser shielding layer 40. The resin layer 30 is formed so as to cover the light-transmitting holes 44 on the second surface 42 of the laser shielding layer 40. The resin layer 30 may be formed on the entire surface of the second surface 42. The light-transmitting holes 44 may be filled with a part of the resin layer 30. The resin layer 30 includes a third surface 31 facing the second surface of the laser shielding layer 40, and a fourth surface 32 which is the surface opposite to the third surface 31.

After the material for the resin layer 30 is coated onto the laser shielding layer 40, a heating step may be carried out to heat the resin layer 30. This allows the resin layer 30 to be solidified. For example, polyamic acid, which is a precursor of polyimide, may be coated onto the laser shielding layer 40, and then a heating step may be carried out to cause an imidization reaction. This allows the resin layer 30 containing polyimide to be formed.

As a result of the above, a laminate 25 is formed, which includes a laser shielding layer 40 including a plurality of light-transmitting holes 44 and a resin layer 30 covering the second surface 42 of the laser shielding layer 40.

Subsequently, a protective layer forming process is carried out. Specifically, as shown in FIG. 12, a protective layer 63 for protecting the resin layer 30 is formed on the laminate 25. The protective layer 63 is formed on the fourth surface 32 of the resin layer 30. The material for forming the protective layer 63 is not particularly limited as long as it can protect the resin layer 30. The protective layer 63 may be formed of the same material as the material for forming the laser shielding layer 40. The protective layer 63 may be formed by a vacuum film forming method such as a sputtering method. The thickness of the protective layer 63 is not particularly limited as long as it can protect the resin layer 30. The thickness of the protective layer 63 may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more.

Subsequently, a support frame forming process is performed. Specifically, a support frame 50 is formed from the support layer 57. In the illustrated example, as shown in FIG. 13, a second resist layer 65 is partially formed on the sixth surface 52 of the support layer 57. The second resist layer 65 has second resist openings 66. The second resist openings 66 are formed corresponding to the second openings 54 of the support frame 50. In the illustrated example, the second resist layer 65 has a plurality of second resist openings 66 so that a plurality of second openings 54 are formed in the support frame 50. The second resist layer 65 may be formed by a known method. Specifically, a second resist layer material, which is a material for forming the second resist layer 65, is prepared and is partially applied on the sixth surface 52 of the support layer 57. Next, the second resist layer material on the sixth surface 52 is exposed to light, and the second resist layer material is developed. As a result, the second resist layer 65 having the second resist openings 66 is formed on the sixth surface 52 of the support layer 57.

Subsequently, as shown in FIG. 14, the first layer 55 of the support layer 57 is etched from the side of the second resist layer 65 to partially remove the first layer 55. As a result, a first layer opening 54a is formed in the first layer 55 as shown in FIG. 14. The etching of the first layer 55 may be dry etching using an etching gas. The etching gas is an example of the above-mentioned etchant. Since the second layer 56 is resistant to the etchant, it is possible to prevent the etching from progressing to the laser shielding layer 40 and the resin layer 30 as shown in FIG. 14.

Then, as shown in FIG. 15, the second layer 56 is etched to partially remove the second layer 56. As a result, a second layer opening 54b is formed in the second layer 56. The etching of the second layer 56 may be performed by supplying an etchant for the second layer 56 to the first layer opening 54a. As a result, a second layer opening 54b connected to the first layer opening 54a is formed. The etching of the second layer 56 may be performed by dry etching using an etching gas, or may be performed by wet etching using an etching solution.

The first layer opening 54a is connected to the second layer opening 54b, thereby forming a second opening 54 penetrating the support layer 57. As a result, the first surface 41 of the shielding portion 46 of the laser shielding layer 40 is exposed in the second opening 54. The second opening 54 overlaps with the multiple light-transmitting holes 44 of the shielding portion 46 in a plan view of the support frame 50. Meanwhile, the peripheral portion 47 remains covered by the support layer 57. After forming the first layer opening 54a or the second layer opening 54b, the second resist layer 65 is removed. The second resist layer 65 can be removed, for example, using a resist processing liquid. In this manner, the support frame 50 is formed.

Then, a laser processing step is performed. Specifically, as shown in FIG. 16A, laser light L is incident on the laminate 25 toward the first surface 41 of the shielding portion 46 of the laser shielding layer 40. The laser light L is incident on the resin layer 30 through the second opening 54 of the support frame 50 and the light-transmitting hole 44 of the shielding portion 46. As a result, a plurality of first openings 34 corresponding to the plurality of light-transmitting holes 44 are formed in the resin layer 30, and a first opening group 35 overlapping with the third opening group 45 of the laser shielding layer 40 is formed. As the laser light L is incident on the third surface 31 of the resin layer 30, each first opening 34 is formed in a tapered shape from the third surface 31 toward the fourth surface 32.

As a laser device that emits the laser light L, a KrF excimer laser that emits laser light with a wavelength of 248 nm, or a YAG laser that emits laser light with a wavelength of 355 nm can be used.

The laser processing process is carried out, for example, as follows. First, the laminate 25 on which the support frame 50 is formed is placed on a stage. At this time, the laminate 25 is placed on the stage so that the support frame 50 faces away from the stage. Next, laser light L is irradiated from the laser device onto the laminate 25, toward the first surface 41 of the shielding portion 46 of the laser shielding layer 40. This forms a plurality of first openings 34 in the resin layer 30 that overlap with a plurality of light-transmitting holes 44 formed in the shielding portion 46.

The beam shape of the laser light L may be any shape. In the example shown in FIG. 16B, the beam shape of the laser light L is rectangular. Correspondingly, in the example shown in FIG. 16B, the shape of the irradiation area LA of the laser light L on the laser shielding layer 40 is also rectangular. In the example shown in FIG. 16C, the beam shape of the laser light L is linear. Correspondingly, in the example shown in FIG. 16C, the shape of the irradiation area LA of the laser light L on the laser shielding layer 40 is also linear. In the examples shown in FIG. 16B and FIG. 16C, the size of the irradiation area LA of the laser light L is determined so that the energy density of the laser light L incident on the shielding portion 46 is large enough to efficiently form the first opening 34 in the resin layer 30. If the energy density of the laser light L incident on the shielding portion 46 is too low, the first opening 34 cannot be efficiently formed in the resin layer 30. Here, the energy density of the laser light L incident on the shielding portion 46 decreases as the irradiation area LA of the laser light L on the laser shielding layer 40 expands. For this reason, in the illustrated example, the size of the irradiation area LA of the laser light L is a size that can include only a part of the laser shielding layer 40. Even if the size of the irradiation area LA of the laser light L is determined in this manner, the entire area of the shielding portion 46 can be irradiated with the laser light by changing the incident position of the laser light L on the laser shielding layer 40. However, it is preferable that the size of the irradiation area LA of the laser light L on the laser shielding layer 40 is a size that can include at least one light-transmitting hole 44. It is further preferable that the size of the irradiation area LA of the laser light L on the laser shielding layer 40 is a size that can include a plurality of adjacent light-transmitting holes 44. In this case, the first opening 34 can be efficiently formed in the resin layer 30.

The incident position of the laser light L can be changed by moving the irradiation head or stage of the laser device.

The irradiation of the laser light L may be performed intermittently or continuously. In addition, the change in the incident position of the laser light L may also be performed intermittently or continuously.

In the example shown in FIG. 16B, the irradiation of the laser light L and the change of the incident position are performed intermittently. More specifically, in the example shown in FIG. 16B, the size of the irradiation area LA of the laser light L on the laser shielding layer 40 is large enough to include two adjacent light-transmitting holes 44. Then, the irradiation of the laser light L and the change of the incident position are performed as follows. First, the incident position of the laser light L on the laser shielding layer 40 is determined so that the irradiation area LA of the laser light L includes two light-transmitting holes 44. Next, the laser light L is irradiated to these two light-transmitting holes 44 for a predetermined time. Next, the irradiation of the laser light L is stopped. Next, the incident position of the laser light L on the laser shielding layer 40 is changed. At this time, the incident position of the laser light L is determined so that the irradiation area LA of the laser light L includes the other two light-transmitting holes 44. The incident position of the laser light L is changed, for example, along the arrow shown in FIG. 16B. Next, the laser light L is irradiated to these other two light-transmitting holes 44 for a predetermined time. Next, the irradiation of the laser light L is stopped. In this way, by repeating the determination or change of the incident position of the laser light L and the irradiation of the laser light L, the laser light can be irradiated to all areas of the shielding portion 46.

In the example shown in FIG. 16C, the irradiation of the laser light L and the change of the incident position are performed continuously. More specifically, in the example shown in FIG. 16C, the irradiation area LA of the laser light L on the laser shielding layer 40 is linear, and its length is a length that allows the irradiation area LA to extend across multiple shielding parts 46. Then, the irradiation of the laser light L and the change of the incident position are performed as follows. First, the incident position of the laser light L on the laser shielding layer 40 is determined so that the irradiation area LA of the laser light L extends along the direction in which the multiple shielding parts 46 are arranged near the edge of the laser shielding layer 40 and extends across the multiple shielding parts 46. Next, the irradiation of the laser light L is started, and the incident position of the laser light L is moved at a constant speed while continuing to irradiate the laser light L on the laser shielding layer 40. The movement of the incident position is performed along a direction perpendicular to the direction in which the irradiation area LA of the laser light L extends, as shown by an arrow in FIG. 16C. In this way, by continuing to irradiate the laser light L onto the laser shielding layer 40 while gradually moving the incident position of the laser light L, it is possible to irradiate the laser light onto all areas of the shielding portion 46.

In this embodiment, the laser processing of the resin layer 30 is performed in a state where the laser shielding layer 40, which functions as a laser processing mask for forming the first opening 34 in the resin layer 30, constitutes the laminate 25 together with the resin layer 30. This prevents the laser processing mask from being misaligned with respect to the resin layer 30 in the process of changing the incident position of the laser light L. In addition, since the laminate 30 includes the laser shielding layer 40 as a laser processing mask, there is no need to align the laser processing mask with the resin layer 30. As a result, it is possible to prevent the laser processing mask from being misaligned with respect to the resin layer 30 during the laser processing step, which would reduce the positional accuracy of the through holes 21 in the mask 20.

Subsequently, the shielding portion removal process is carried out. Specifically, the portion of the laser shielding layer 40 exposed in the second opening 54, i.e., the shielding portion 46, is etched. As a result, a third opening 48 is formed in the laser shielding layer 40. The etching of the shielding portion 46 may be performed by supplying an etchant for the laser shielding layer 40 to the second opening 54. As a result, the third opening 48 connected to the second opening 54 is formed. The etching of the shielding portion 46 may be performed by dry etching using an etching gas or by wet etching using an etching solution. As the second opening 54 is connected to the third opening 48, the resin mask portion 36 of the resin layer 30 is exposed in the second opening 54 and the third opening 38 (see FIG. 3). By etching the shielding portion 46, the residue attached to the shielding portion 46 when etching the support layer 57 can be removed together with the shielding portion 46. In addition, since the peripheral portion 47 is covered by the support frame 50 and the resin layer 30, it is not removed in the shielding portion removal process and remains between the support frame 50 and the resin layer 30.

Furthermore, a protective layer removal process is performed. In the protective layer removal process, the protective layer 63 is removed. The protective layer 63 can be removed by, for example, etching. The etching of the protective layer 63 may be performed by dry etching using an etching gas, or by wet etching using an etching solution. The protective layer 63 may be removed together with the laser shielding layer 40 by an etchant that etches the laser shielding layer 40. In other words, the shielding portion removal process and the protective layer removal process may be performed simultaneously. In further words, the protective layer 63 may be removed in the shielding portion removal process. In this case, the protective layer 63 is preferably formed of the same material as the laser shielding layer 40.

By the above steps, a mask 20 with a through hole 21 is manufactured.

The embodiment described above can be modified in various ways. Other embodiments will be described below, with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals are used for parts that can be configured similarly to the embodiment described above as for the corresponding parts in the embodiment described above. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the embodiment described above can also be obtained in other embodiments, the description may be omitted.

In the above embodiment, the shielding portion 46 of the laser shielding layer 40 is removed in the shielding portion removal step, and as a result, the mask 20 does not include the shielding portion 46. However, as shown in FIG. 17 and FIG. 18, the mask 20 may have the shielding portion 46. In other words, the shielding portion removal step does not need to be performed in the manufacturing process of the mask 20. In this case, the through hole 21 of the mask 20 is formed by the first opening 34 and the light-transmitting hole 44 that are continuous with each other. By including the shielding portion 46 in the mask 20, as shown in FIG. 2, the shielding portion 46 can be attracted toward the magnet 5 by magnetic force in the deposition device 10, and therefore the resin mask portion 36 can be attracted toward the magnet 5. This can reduce or eliminate the gap between the region where the through hole 21 of the mask 20 is provided and the substrate 110. This can suppress the occurrence of a shadow in the deposition process.

When the mask 20 includes a shielding portion 46, the sum of the thickness T40 of the laser shielding layer 40 and the thickness T30 of the resin layer 30 may be, for example, 2.0 μm or more, 2.5 μm or more, 3.0 μm or more, or 4.0 μm or more. The sum of the thicknesses T40 and T30 may be, for example, 6.0 μm or less, 7.0 μm or less, 8.0 μm or less, or 10.0 μm or less. The range of the sum of the thicknesses T40 and T30 may be determined by a first group consisting of 2.0 μm, 2.5 μm, 3.0 μm, and 4.0 μm, and/or a second group consisting of 6.0 μm, 7.0 μm, 8.0 μm, and 10.0 μm. The range of the sum of the thickness T40 and the thickness T30 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of the sum of the thickness T40 and the thickness T30 may be determined by a combination of any two of the values included in the first group described above. The range of the sum of the thickness T40 and the thickness T30 may be determined by a combination of any two of the values included in the second group described above. The sum of thickness T40 and thickness T30 may be, for example, 2.0 μm or more and 10.0 μm or less, 2.0 μm or more and 8.0 μm or less, 2.0 μm or more and 7.0 μm or less, 2.0 μm or more and 6.0 μm or less, 2.0 μm or more and 4.0 μm or less, 2.0 μm or more and 3.0 μm or less, 2.0 μm or more and 2.5 μm or less, 2.5 μm or more and 10.0 μm or less, 2.5 μm or more and 8.0 μm or less, 2.5 μm or more and 7.0 μm or less, 2.5 μm or more and 6.0 μm or less, 2.5 μm or more and 4.0 μm or less, 2.5 μm or more and 3.0 μm or less, or 3.0 μm or more and 10. 0 μm or less, 3.0 μm or more and 8.0 μm or less, 3.0 μm or more and 7.0 μm or less, 3.0 μm or more and 6.0 μm or less, 3.0 μm or more and 4.0 μm or less, 4.0 μm or more and 10.0 μm or less, 4.0 μm or more and 8.0 μm or less, 4.0 μm or more and 7.0 μm or less, 4.0 μm or more and 6.0 μm or less, 6.0 μm or more and 10.0 μm or less, 6.0 μm or more and 8.0 μm or less, 6.0 μm or more and 7.0 μm or less, 7.0 μm or more and 10.0 μm or less, 7.0 μm or more and 8.0 μm or less, or 8.0 μm or more and 10.0 μm or less. This makes it possible to more effectively reduce the effects of shadows when forming a highly precise pattern of deposition layers for organic EL displays with a pixel count of 3000 ppi or more.

Furthermore, when the mask 20 includes the shielding portion 46, it is preferable to select a material for the protective layer 63 that is different from the material for the laser shielding layer 40. More specifically, it is preferable to select a material for the protective layer 63 so that the laser shielding layer 40 is not removed by the etchant used when etching the protective layer 63.

5: magnet, 6: deposition source, 7: deposition material, 8: heater, 10: deposition device, 20: mask, 21: through hole, 25: laminate, 30: resin layer, 31: third surface, 32: fourth surface, 34: first opening, 36: resin mask part, 37: resin peripheral part, 40: laser light shielding layer, 41: first surface, 42: second surface, 44: light transmitting hole, 46: shielding part, 47: peripheral part, 50: support frame, 51: fifth surface, 52: sixth surface, 54: second opening, 55: first layer, 56: second layer, 60: first resist layer, 63: protective layer, 65: second resist layer, 100: organic device, 110: substrate

Claims

a laminate preparation step of preparing a laminate including a laser shielding layer formed of a metal material or a ceramic material, the laser shielding layer including a first surface, a second surface that is a surface opposite to the first surface, and a plurality of light transmitting holes extending from the first surface to the second surface, and a resin layer that covers the second surface of the laser shielding layer;
a laser processing step of forming a plurality of first openings in the resin layer corresponding to the plurality of light transmitting holes of the laser shielding layer by irradiating a laser beam onto the laminate toward the first surface of the laser shielding layer;
A method for manufacturing a mask comprising:
the laser shielding layer includes at least one shielding portion including the plurality of light-transmitting holes, and a surrounding portion surrounding the shielding portion in a plan view,
The method for producing a mask according to claim 1 , further comprising a shielding portion removing step of removing the shielding portion of the laser shielding layer.
the resin layer includes a third surface facing the second surface of the laser shielding layer, and a fourth surface that is a surface opposite to the third surface,
The method for manufacturing the mask includes a protective layer forming step of forming a protective layer that covers the fourth surface of the resin layer;
a protective layer removing step of removing the protective layer;
The method for manufacturing a mask according to claim 1 , comprising:
a support layer preparation step of preparing a support layer having a fifth surface facing the first surface of the laser shielding layer and a sixth surface that is a surface opposite to the fifth surface, the support layer supporting the laminate;
a support frame forming step of forming at least one second opening in the support layer, the second opening overlapping the plurality of light transmitting holes in the laser shielding layer in a plan view;
The method for manufacturing a mask according to claim 1 , comprising:
The laminate preparation step includes:
forming the laser shielding layer on the support layer;
forming a first resist layer partially on the second surface of the laser shielding layer;
forming the plurality of light transmitting holes in the laser light shielding layer by etching the laser light shielding layer from the first resist layer side;
removing the first resist layer;
The method of manufacturing the mask of claim 4 , comprising:
the support layer includes a first layer forming the sixth surface and a second layer located between the first layer and the laser shielding layer,
The support frame forming step includes:
forming a second resist layer partially on the sixth surface of the support layer;
partially removing the first layer by etching the first layer from the second resist layer side;
The method of manufacturing the mask of claim 4 , comprising:
The method for manufacturing a mask according to claim 6, wherein the support frame forming step includes a step of partially removing the second layer after the step of partially removing the first layer.
The method for manufacturing a mask according to claim 4, wherein the support layer includes an inorganic material.
The method for manufacturing a mask according to claim 4, wherein the support layer includes a metal material.
The method for manufacturing a mask according to claim 6, wherein the first layer includes a non-metallic inorganic material.
the first layer comprises a non-metallic inorganic material;
The method of claim 6 , wherein the second layer comprises a metallic material.
The method for manufacturing a mask according to claim 1, wherein the laser shielding layer contains titanium nitride, nickel or copper.
The method for manufacturing a mask according to claim 1, wherein the laser shielding layer is formed by a vacuum deposition method or a plating method.
a resin layer including a third surface and a fourth surface that is a surface opposite to the third surface, the resin layer including at least one resin mask portion including a plurality of first openings extending from the third surface to the fourth surface, and a resin surrounding portion surrounding the resin mask portion in a plan view;
a laser shielding layer formed of a metal material or a ceramic material, the laser shielding layer including a second surface facing the third surface of the resin layer, and a first surface being a surface opposite to the second surface, and including at least one peripheral portion overlapping the resin peripheral portion of the resin layer in a plan view;
a support frame including a fifth surface facing the first surface of the laser shielding layer, a sixth surface being a surface opposite to the fifth surface, and at least one second opening extending from the sixth surface to the fifth surface and overlapping with the resin mask portion of the resin layer in a plan view;
Equipped with
The support frame comprises an inorganic material.
The mask of claim 14, wherein the support frame comprises a metallic material.
the support frame includes a first layer forming the sixth surface and a second layer located between the first layer and the laser shielding layer,
The mask of claim 14 , wherein the first layer comprises a non-metallic inorganic material.
The mask of claim 16, wherein the second layer comprises a metallic material.
The mask of claim 14, wherein the laser shielding layer includes titanium nitride, nickel, or copper.
each of the first openings of the resin layer is tapered from the third surface to the fourth surface of the resin layer;
15. The mask of claim 14, wherein each second opening in the support frame flares between the fifth side and the sixth side of the support frame.
the laser shielding layer includes a shielding portion that overlaps the second opening of the support frame in a plan view,
The mask according to claim 14 , wherein the shielding portion includes a plurality of light-transmitting holes each overlapping with a corresponding one of the first openings of the resin layer in a plan view.
A method for forming a deposition layer, comprising a step of forming a plurality of deposition layers on a substrate using the mask according to claim 14.
A method for manufacturing an organic semiconductor device, comprising a step of forming multiple deposition layers on a substrate using the mask according to claim 14.