WO2024068546A1

WO2024068546A1 - Electrical device and method for forming an electrical device

Info

Publication number: WO2024068546A1
Application number: PCT/EP2023/076394
Authority: WO
Inventors: Dominik Lorenz; Frank Fischer
Original assignee: Robert Bosch Gmbh
Priority date: 2022-09-26
Filing date: 2023-09-25
Publication date: 2024-04-04
Also published as: DE102022210149A1

Abstract

The invention relates to an electrical device with at least one circuit carrier comprising a carrier substrate made of an electrical insulation material. On at least one outer face of the circuit carrier, an electrical conductor structure is formed with structure regions that are electrically insulated from one another by an effective first insulation structure made of the insulation material of the carrier substrate. A dam-like second insulation structure is then arranged, at least in some regions, on the first insulation structure, said second insulation structure framing an electrically insulated structure region and/or at least one group of at least two adjacent electrically insulated structure regions of the conductor structure with a dam course that is closed in each case. The thus extending second insulation structure projects in each case beyond the surface of the at least one or the several framed comprised structure regions on sides of the outer surface of the circuit carrier.

Description

title

Electrical device and method for forming an electrical device

The invention relates to an electrical device and a method for forming the electrical device according to the preambles of the independent claims.

State of the art

In the event of a fault in electrical devices, there is a risk of a fire being triggered. A fire can be triggered in particular by sparks caused by a short circuit or a voltage flashover within the electrical device.

A possible fire not only threatens to completely damage the electrical device, but also poses an immediate threat to the surrounding area, for example a building, a vehicle or even a human life.

To avoid such fire risks - also known as NoTi (No Thermal Incident) - relevant standards must be taken into account when developing electrical devices, for example ISO 26262, DIN EN 60664-1 (01/2008), DIN EN 60664-5 (05/2008), DIN EN 50124-1, DIN EN 60112. In general, electrical devices are tested by electronics developers for their NoTi robustness and are classified into so-called NoTi classes. Often the result is In addition to the standards, there are also internal guidelines, for example regarding the use of our own design elements in assembly and connection technology.

Sufficient NoTi robustness on the outer layers of a circuit carrier is often set via distances between the different potentials, so that no electrical flashover can occur due to electrically conductive particles or a closed film of water. However, for high-voltage applications, such large distances are required that implementation is made more difficult or impossible for economic reasons and with regard to a compact design. The distances can then still be reduced by applying certain insulating coatings to correspondingly endangered areas with high potentials. However, such coatings run undefined laterally, so that no clearly defined edge areas are created. Care must also be taken to ensure that neighboring areas are not accidentally contaminated by the coating material. Another possibility is to completely package the electrical device in an adhesive insulating protective material (direct packaging). For example, various mold materials are suitable for this, which cover the electrical device over a large area using corresponding known molding processes. Also known are the possibilities of “dam and fill technology”, in which an insulating material is first applied in the form of a dam around the edge of the circuit carrier. The resulting wall is then used as a filling form for another potting material, which covers at least the entire electronic circuit up to the applied wall.

In principle, such flat coverings can have an affinity for the formation of a harmful microclimate underneath the packaging material, which can damage the electronic circuit, for example through corrosive processes.

Disclosure of the invention The invention is based on the object of proposing a high NoTi robustness of electrical devices, especially in high-voltage applications.

This object is achieved by an electrical device and a method for forming the electrical device with the characterizing features of the independent claims.

It is assumed that an electrical device has at least one circuit carrier comprising a carrier substrate made of an electrical insulating material. An electrical conductor structure is formed on at least one outer surface of the circuit carrier with structural regions that are electrically insulated from one another by a first insulation structure made of the insulating material of the carrier substrate. A dam-like second insulation structure is then arranged at least in some areas on the first insulation structure, which frames at least one electrically insulated structural region and/or at least a group of at least two adjacent electrically insulated structural regions of the conductor structure with a respective closed dam course. The second insulation structure running in this way protrudes on the outer surface of the circuit carrier over the surface of the at least one or more framed structural regions. The second insulation structure therefore forms a type of mechanical protective wall for the structural areas enclosed in a closed frame. An electrically conductive media film that gets onto the outer surface of the circuit carrier is separated at relevant points by the protruding second insulation structure and is thus prevented from forming a surface-connected media film. The forced separation achieved in this way advantageously ensures that a short circuit in a structural area of the conductor structure leading between two different potentials, which would otherwise be triggered due to the bridging of the different potential areas by the media film spread over the surface, is prevented in the simplest possible way. Due to the dam-like design, depending on the Due to the protruding structural height, even very large amounts of media can be prevented from flowing further by a trough-like media intake and/or by a wall-like barrier. Since the second insulation structure does not otherwise provide large-scale coverage of structural areas, no harmful microclimates can arise locally. A separated or retained media film can completely escape again in another way in exchange with the atmosphere without causing damage to the electronic circuit of the electrical device, for example through an evaporation process. Potential surfaces on the first insulation structure for arranging the second insulation structure arise in particular as negative surfaces exposed on the outer surface of the circuit carrier for the layout of the conductor structure, which are formed from the insulation material of the first insulation structure.

The dam-like design of the second insulation structure therefore includes a line of the second insulation structure along a defined curve on the first insulation structure. In this respect, an otherwise usual direct packaging or dim&fill is reduced to a line-like packaging of the circuit carrier and runs application-specifically between potential areas at risk of flashover. In a structure area enclosed in a closed frame, the second insulation structure runs along an edge of the curve adapted to one structure area. In a group of at least two structure areas enclosed in a closed frame, this curve is adapted to an envelope curve enclosing this structure area. In this respect, structure areas within this group have exposed areas of the first insulation structure towards the outer surface of the circuit carrier without a second insulation structure being arranged there. The second insulation structure is also effective against conductive particles, which can now only be arranged on one side of the second insulation structure on the circuit carrier. This prevents them from bridging the now separate structural areas, so that short circuits are also avoided here. Advantageous further developments and improvements of the electrical device according to the invention are possible through the measures listed in the dependent claims.

In a particularly advantageous embodiment of the electrical device, the at least one structural region enclosed in a closed frame or the at least one group of at least two structural regions enclosed in a closed frame is/are designed as a high-voltage region of the electrical device, preferably with a high-voltage range >400 V, in particular with a high-voltage range >600 V, for example with a high-voltage range >800 V. High voltages in particular have the risk of voltage flashovers between potential-carrying surfaces, which is averted for a flashover path to be formed by overcoming an additional protruding insulation barrier in the form of the second insulation structure. In this respect, electrical devices in the high-voltage range, for example power modules, inverters, etc., can advantageously be designed in a NoTi-safe manner.

An advantageous embodiment of the electrical device is designed such that the second insulation structure projects beyond the surface(s) by 1 - 10 mm, preferably by 1.5 - 6 mm, at least in the region of the at least one structural region enclosed in a closed frame and/or the at least one group of at least two structural regions enclosed in a closed frame. By lengthening the creepage distances for possible voltage flashovers with increasing dam height, insulating requirements for preventing voltage flashovers and/or short circuits can be reliably met over a wide potential range to be separated despite high voltage potentials.

The second insulation structure can also be designed in multiple layers in the height and/or width direction, for example if this is done by an application process.

Further advantages result from the fact that embodiments of the electrical device are possible in which the at least one frame is closed encompassed structural region and/or the at least one closed-framed group of at least two structural regions has/have a smallest distance to the next adjacent structural regions of <=7 mm, preferably of <=5 mm, in particular of <=3.5 mm. The minimization can be particularly successful with increasing dam height and/or width and/or higher electrical dielectric strength of the insulation material of the first and/or the second insulation structure. In this way, electrical devices in the high-performance and/or high-voltage range can advantageously be made very compact.

Furthermore, very favorable conditions are given for embodiments of the electrical device in which the second insulation structure extends to the at least one closed-framed structural region and/or up to at least one or all structural regions of the at least one closed-framed group of at least two structural regions and/or at least one of the structural areas enclosed in a closed frame extends to at least one, in particular all of the next adjacent structural areas. Advantageously, the surfaces of the first insulation structure that are exposed between the structural regions to be separated on the outer surface of the circuit carrier can be flexibly partially or completely covered by the arranged second insulation structure. In this way, the insulation effect of the second insulation structure is strengthened or maximized with an increasing dam width up to a maximum of the structural area. Further advantageously, the structural area, which is at least enclosed in a closed frame, can be exposed with its entire surface. In this way, for example, heat dissipation capacity and/or contactability can be maintained, particularly in the case of contact pads.

In an optional embodiment of the electrical device, the second insulation structure flatly covers an edge region of at least one or all of the structural regions enclosed in a closed frame and/or at least one or all of the structural regions closest to this/-n. A coverage width of an edge contour of the respective structural area preferably ranges from up to at least 1 mm, more preferably from up to 2 mm. This provides flexibility to further increase the insulation effect if necessary while maintaining a compact design of the electrical device.

Additional advantages are provided in an embodiment of the electrical device in which the carrier substrate is flat on the side facing the conductor structure and the next adjacent structure areas are each arranged at a distance from one another with a trench on the carrier substrate side that extends to the carrier substrate side. The second insulation structure then runs over a corresponding section within a respective trench that borders at least one of the structure areas enclosed in a closed frame. A wide variety of substrate types or circuit carriers, in particular those with a flat design, can advantageously be used here without influencing and/or changing their known manufacturing process, in particular a DBC (Direct Bonded Copper), AMB (Active Metal Brazing), IMS (Insulated Metal Substrate), LTCC (Low Temperature Cofired Ceramic), HTCC (High Temperature Cofired Ceramic) circuit carrier or a printed circuit board, for example of the FR4 type. Overall, the creepage distances are advantageously extended further because the dam height of the second insulation structure is also increased by the trench depth.

Alternative designs of circuit carriers are also conceivable, in which the outer conductor structure is also embedded in the carrier substrate at least partially or up to its outermost structural surface. In these cases, the trenches are then partially or completely filled by the insulation material of the first insulation structure.

In general, there is a favorable, optional development of the electrical device in such a way that in the area of at least one structural region that faces closest to an edge section of the circuit carrier, the second insulation structure opens into two edge section points that are spaced apart from one another. In these cases, an edge region has a proportion of the first insulation structure, which separates the at least one closest-facing structural region from the edge of the Circuit carrier spaced apart. Advantageously, for example, the design of the first insulation structure is already sufficient in terms of value to meet the required insulation specifications.

An embodiment of the electrical device is preferred in which at least one of the structure regions enclosed in a closed frame extends to an edge section of the circuit carrier up to a distance of <7 mm, preferably <5 mm, in particular <3 mm. A corresponding partial section of the second insulation structure then extends to this edge section of the circuit carrier and/or protrudes from it. The protrusion can in particular be designed with an overhang of up to 10 mm, for example up to 5 mm. The second insulation structure preferably covers at least in regions an end face of the circuit carrier following the said edge section. This results in the great advantage that an outer surface of the circuit carrier can be used for a maximum of one electrical conduction function, thereby saving costs and installation space.

In general, there are advantages in the embodiments of an electrical device already described if the second insulation structure is a hardened injection molding structure or a hardened dispensing structure. The injection molding structure is designed as a mold of a tool mold. Injectable molding compounds are particularly suitable as materials. The dispensing structure, in turn, is designed in the form of a single-layer or multi-layer dispensing bead. Dispensable insulating polymer materials in particular can be used here. Epoxy materials are particularly suitable as injectable or dispensable insulation materials. The second insulation structure can advantageously be formed using otherwise known methods. In addition, circuit carriers that were previously insulated differently do not require any special adaptations or complex redesigns to be implemented with a simple second insulation structure.

Embodiments of the electrical device are preferably such that the second insulation structure has a plurality of closed, framed structural areas and/or closed framed groups of at least two structural regions, in particular adjacent to one another in a structural composite. In a top view, the second insulation structure resembles an irregular honeycomb structure, with individual honeycombs being larger or smaller, for example, only encompassing one or more structural areas in a closed frame, having similar or completely different contours, with the same or different dam height and/or width are, border one another or are spaced apart from one another, etc. Depending on the application, the second insulation structure can therefore very flexibly follow a required course pattern.

An advantageous development of the electrical device is shown in that the second insulation structure encloses at least one structural region or a group of at least two structural regions and at least one further structural region or a further group of at least two structural regions, each nested within one another. In particular, individual high-voltage connections can be very closed in this way be electrically insulated effectively and safely.

In general, there is an optional embodiment of the electrical device in which the conductor structure is connected to at least one electrical component. The electrical component in turn has a contact area comprising several connection contacts with a fine-pitch distance. In the contact area, the conductor structure and the connection contacts of the electrical component are then at least partially, in particular completely, covered by an insulating material. For this purpose, an insulation material forming the second insulation structure can preferably be used. In particular, this shows an advantageous combination option with a flat coverage only in areas in which very fine conductive structures have to be electrically insulated from one another.

The invention also leads to a method for forming an electrical device, in particular according to at least one of the previously described embodiments, with the following method steps: a) Providing at least one circuit carrier comprising a carrier substrate made of an electrical insulating material, an electrical conductor structure being formed on at least one outer surface of the circuit carrier with structural regions which are electrically insulated from one another by a first insulation structure made of the insulating material of the carrier substrate, b) Arranging at least in regions a second dam-like insulation structure on the first insulation structure, wherein at least one electrically insulated structural region and/or at least one group of at least two adjacent electrically insulated structural regions of the conductor structure is/are framed with a respective closed dam course, such that on the outer surface of the circuit carrier the second insulation structure projects over the surface of the at least one or more framed structural areas.

In an advantageous embodiment of the method, the insulation structure is formed as a dispensing bead applied at least in one layer by means of a dispensing process or is formed as a molding of an injection molding tool by means of an injection molding process, in particular transfer molding or direct injection molding. In the case of dispensing, the dispensing bead is formed by appropriately moving and dosing a dispensing device. In the case of spraying, the circuit carrier is arranged in a closed tool mold, the tool mold having a shape that is complementary to the second insulation structure. The formation is closed by appropriately resting the tool on the outer surfaces of the circuit carrier to form a cavity, which is filled by injecting a molten injection molding material. When the injection molding material solidifies, the tool can then be removed from the mold.

Generally advantageously, the second insulation structure can be formed before electrical contacting of the conductor structure with at least one electrical component. The same advantages can be mentioned for the method according to the invention as were already listed for the device according to the invention.

Short description of the drawings

Further advantages, features and details of the invention result from the following description of preferred exemplary embodiments and from the drawing. This shows in:

Fig. 1: an exemplary embodiment of an electrical device comprising structural regions which are electrically insulated from one another by a first insulation structure and a second insulation structure arranged on the first, in a perspective view,

Fig. 2: a sectional view of Fig. 1, in which schematically sectional surfaces of structural areas as well as the first and second insulation structures are shown in an exemplary sectional plane of the electrical device.

Embodiments of the invention

In the figures, functionally identical components are each marked with the same reference numerals.

An exemplary embodiment of an electrical device 100 is shown in a slightly perspective view in FIG. For simplification, electrical components 90 are hidden, so that in principle only one circuit carrier 10 included in the electrical device 100 is shown in an unequipped state. The circuit carrier 10 includes a carrier substrate 11, which is formed from an electrical insulation material 12. In the present exemplary embodiment, the carrier substrate 11 has flat substrate surfaces 11a, 11b on both sides. At least on one substrate surface 11a, 11b, preferably on both sides of the carrier substrate 11, a conductor structure 15 is arranged, which in connection with electrical components 90 electrical circuit of the electrical device 100. The conductor structure 15 comprises various separate structural regions 16, which are electrically insulated from one another via the insulating material 12 of the carrier substrate 11. The at least one substrate surface 11a, 11b, on which the structural regions 16 are arranged, therefore represents a first insulation structure 11.1 for their electrical insulation.

Depending on the type of circuit carrier 10 used, the insulation material 12 of the carrier substrate 11 is formed, for example, from a ceramic, a polymer material or something else. Suitable circuit carriers 10 are therefore, for example, a DBC (Direct Bonded Copper), AMB (Active Metal Brazing), IMS (Insulated Metal Substrate), LTCC (LowTemperatureCofiredCeramic), HTCC (HighTemperatureCofiredCeramic) circuit carrier or a printed circuit board, for example from FR4 type. Depending on the type of circuit carrier 10, further electrical conductor structures 15 can also be arranged in inner layers, which are electrically connected to one another with the conductor structure 15 or the structural regions 16 formed on the outer surface of the circuit carrier 10 according to an electrical circuit diagram, for example through plated-through holes.

In a top view of the outer surface of the circuit carrier 10 - this can also be easily seen in the slightly perspective view in Figure 1 - a part of the substrate surface 11 a, 11 b not covered by the structure regions 16 can be seen, which thus represents an area of the first insulation structure 11.1 that is exposed to the outer surface of the circuit carrier 10. The shape of the exposed surface of the first insulation structure 11.1 is complementary to the edge profiles of the structure regions 16. A second insulation structure 11.2 made of an electrical insulation material 13 is formed on part of this exposed surface of the first insulation structure 11.1. The second insulation structure 11.2 is oriented towards the shape of the exposed surface of the first insulation structure 11.1. The second insulation structure 11.2 has, for example, a section 11.2a through which an individual structure region 16, 16.a1 that is already electrically insulated from the first insulation structure 11.1 is enclosed. In the present embodiment the individual structural region 16, 16.a1, which is framed in this closed manner, borders on an edge section 10a of the circuit carrier 10, so that the running section 11.2a also runs along this edge section 10.a. In the same way, individual structural regions 16 can also be framed in a closed manner, which border exclusively on other structural regions 16 on all sides, i.e. do not border on an edge section of the circuit carrier 10. Alternatively or additionally, a group of at least two immediately adjacent structural regions 16 is enclosed in a closed frame by a corresponding running section 11.2b, 11.2c of the second insulation structure 11.2. In the present exemplary embodiment, a first group is designed as an enclosed framed structural composite B of two adjacent structural regions 16.b1, 16.b2. Here too, the corresponding section 11.2b of the second insulation structure 11.2 runs along an edge section 10.b of the circuit carrier 10. In contrast, another closed-framed structural composite C formed on the circuit carrier 10 and comprising three adjacent structural regions 16, 16.c1, 16.c2, 16.c3 shows a section 11.2c of the second insulation structure 11.2 in which at least one further structural region 16 is arranged between the structural composite C and an edge section of the circuit carrier 10. Closed-framed structural composites can also be formed which comprise more than three adjacent structural regions 16. In the exemplary embodiment, the structural composite D is mentioned as an example. Another special feature is also shown here. Thus, within the running section 11.2d of the second insulation structure 11.2 of such a composite D, a further running section 11.2e can be formed offset inwards, which itself again surrounds at least one structural region 16, 16e in a closed frame. This therefore corresponds to a nesting of such running sections 11.2d, 11.2e. More than two inwardly offset nests can be formed. In addition, such nests can be implemented - as shown in Figure 1 - namely at least two running sections 11.2e offset inwards with respect to the running section 11.2d, which are themselves arranged next to one another, i.e. are no longer nested further into one another. In addition, Figure 1 shows a circuit region comprising at least one structural region 16, 16.f1 or a structural composite F made up of several adjacent structural regions 16, 16.f1, 16.fx, which, however, is only framed by a running section 11.2f of the second insulation structure 11.2 that is open on one side to an edge section 10.f. In the region of the edge section 10.f, only a partial area of the exposed first insulation structure 11.1 is designed to run complementarily to the next adjacent structural region 16, 16.fx. The running section 11.2f of the second insulation structure 11.2 ends in two edge section points f1, f2, which enclose the edge section 10.f between them.

In the exemplary embodiment, the previously described options for a running section 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f of the second insulation structure 11.2 are designed to run into one another. This means that at least two adjacent running sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f share or have the same subsection. This results in a coherent type of honeycomb structure with possibly different sizes and shapes of individual honeycombs, each of which represents a structural composite B, C, D, F or individually enclosed structural regions 16 encompassed by a closed framed or one-sided open framed section 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f of the second insulation structure 11.2. Depending on the application, various honeycomb structures of this type are conceivable. For example, the section 11.2g of the second insulation structure 11.2 shows at least one representative honeycomb which is detached from the otherwise mentioned coherent honeycomb structure. Of course, in other embodiments, additional individual honeycombs or even other coherent honeycomb structures can be designed to be detached from one another. It is also conceivable to design exclusively non-coherent honeycombs for corresponding applications.

Figure 2 shows a schematic sectional view of the electrical device 100 presented in Figure 1 in a sectional plane A - A. In addition to the structural areas 16, the cross sections of the second insulation structure 11.2 are also shown in the area of their respective cut sections. 11.2a, 11 .2b. A trench 18 is formed between two adjacent structural regions 16, which extends to the substrate surface 11 a, 11 b. The second insulation structure 11 .2 runs within the trench 18, with various possible embodiments being shown as examples. The structure width m of the second insulation structure 11.2 can be selected to be smaller than the trench width M, so that the second insulation structure 11.2 - as shown to the left of the designated structural region 16.b2 - has a distance from the enclosed structural region 16, in particular in the form of an air gap. To the right of the designated structural region 16.a1, an embodiment is shown in which the second insulation structure 11.2 extends to the edge of the respectively enclosed structural regions 16. In general, it is conceivable that only on one side of the second insulation structure 11.2 does it extend to the structural region 16 encompassed there, whereas on the opposite side the second insulation structure 11.2 is spaced apart from the structural region 16 encompassed on this side.

Basically, the second insulation structure 11.2 protrudes from the first insulation structure 11.1 or the substrate surface 11a, 11b by a height dimension H. The height dimension H is always selected such that the second insulation structure 11.2 protrudes beyond the outer surface of the enclosed structure region 16 by a projection dimension h. Due to the projection dimension h, the second insulation structure 11.2 is designed in the form of a protective dam, which partially packages the circuit carrier 10 in a defined linear manner according to the respective section 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f. To the left of the designated structure region 16.a1, a further possible embodiment is shown, in which the second insulation structure 11.2 covers the respectively enclosed structure regions 16.a1, 16.b2 in their edge region with an overlap dimension x on both sides. The second insulation structure 11.2 thus has a width dimension m' above the outer surface of the enclosed structure regions 16.a1, 16.b2 that is larger than the trench width M. Alternatively, the overlap can also be implemented on only one side of the second insulation structure 11.2. Deviating from the representation in Figure 2, the height dimensions H or the projection dimensions h may differ depending on the section course 11 .2a, 11 .2b, 11 .2c, 11 .2d, 11 .2e, 11 .2f, as may the pit width M or the respective width dimension m, m' of the second insulation structure 11 .2. The structure area 16 arranged on the left is spaced from the edge of the circuit carrier 10, so that the protruding area of the carrier substrate 11 is used there to ensure insulation requirements. The structure area 16 arranged on the right, on the other hand, extends to the edge of the circuit carrier 10, so that a maximum area of the structure area 16 can be used here. The insulation requirements are ensured in such a way that the second insulation structure 11.2 covers the corner area of the circuit carrier 10 over an edge section in both corner directions. In addition to covering the edge area of the enclosed structure area 16 on the side of its outer surface, its front side is also completely covered and, in addition, at least in part, the front side of the carrier substrate 11 is covered. The coverage dimensions x' can be adapted to the specific application.

Not shown in the sectional view is the alternative possibility that the second insulation structure 11.2 is arranged in the edge region of the circuit carrier 10 on the first insulation structure 11.1 and extends to the edge of the circuit carrier 10 and/or to the enclosed structural region 16. Such an expression is formed in the edge section 10.a in FIG. Optionally, it is also possible here to design the second insulation structure 11.2 laterally over the end face of the carrier substrate 11, at least partially covering it.

In principle, the second insulation structure 11.2 can be formed from a dispensable material on the first insulation structure 11.1 using a dispensing device 200. The dispensing device 200 follows the defined sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f of the second insulation structure 11.2, forming a dispensing bead with at least one layer. To achieve large overall heights and widths of the second insulation structure 11.2, the dispensing bead can also be produced from several applied layers of the dispensable material. An alternative manufacturing option for producing the second insulation structure 11.2 is provided by means of an injection molding process. For this purpose, the unpopulated circuit carrier or the one already partially or completely populated with electrical components 90 10 is placed in an injection molding tool 300, wherein the injection molding tool 300 has a shape complementary to the defined second insulation structure 11.2 as enclosed cavities. By injecting injectable material into the tool 300 until the cavities are completely filled with material, the second insulation structure 11.2 is obtained after the material has solidified by molding the cavities.

The electrical device 100 is preferably an electronic module for a high-voltage application, with at least high-voltage areas on the circuit carrier additionally being framed by the second insulation structure 11.2.

Claims

Expectations

1 . Electrical device (100) with at least one circuit carrier (10) comprising a carrier substrate (11) made of an electrical insulation material (12), wherein an electrical conductor structure (15) is formed on at least one outer surface of the circuit carrier (10) with structure regions (16) which are electrically insulated from one another by a first insulation structure (11.1) made of the insulation material (12) of the carrier substrate (11), characterized in that a dam-like second insulation structure (11.2) is arranged at least in regions on the first insulation structure (11.1), which surrounds at least one electrically insulated structure region (16, 16.a1) and/or at least one group of at least two adjacent electrically insulated structure regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) of the conductor structure (15) with a closed dam profile and in this case on sides the outer surface of the circuit carrier (10) protrudes beyond the surface of the at least one or more framed structural regions (16).

2. Electrical device (100) according to claim 1, characterized in that the at least one closed-framed structural region (16, 16.a1) or the at least one closed-framed group of at least two structural regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) is/are designed as a high-voltage region of the electrical device (100), preferably with a high-voltage range >400 V, in particular with a high-voltage range >600 V, for example with a high-voltage range >800 V.

3. Electrical device (100) according to claim 1 or 2, characterized in that the second insulation structure (11.2) at least in the area of the at least one closed-framed structural area (16, 16.a1) and/or the at least one closed-framed group of at least two structural areas (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) projects beyond the surface(s) by 1 - 10 mm, preferably by 1.5 - 6 mm. Electrical device (100) according to one of the preceding claims, characterized in that the at least a closed framed structural region (16, 16.a1) and/or the at least one closed framed group of at least two structural regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3). has/have the smallest distance to the next adjacent structural areas (16) of <=7 mm, preferably of <=5 mm, in particular of <=3.5 mm. Electrical device (100) according to one of the preceding claims, characterized in that the second insulation structure (11.2) extends up to the at least one closed-framed structural region (16, 16.a1) and/or up to at least one or all structural regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) of the at least one closed-framed group of at least two structural regions and/or up to at least one, in particular all the next adjacent structural regions (16) of at least one of the The closed-framed structural regions (16) are sufficient. Electrical device (100) according to one of the preceding claims, characterized in that the second insulation structure (11.2) has an edge region of at least one or all of the closed-framed structural regions (16) and/or at least one or all to this/n next adjacent structural areas (16) are covered flat, in particular with a coverage width of up to at least 1 mm, preferably up to 2 mm from an edge contour of the respective structural area. Electrical device (100) according to one of the preceding claims, characterized in that the carrier substrate (11) is flat on the side facing the conductor structure (15) and the next adjacent structural regions (16) are each arranged at a distance from one another with a trench (18) extending up to the substrate surface (11a, 11b), wherein the second insulation structure (11.2) extends over a corresponding section within a respective trench (18), which borders on at least one of the closed-framed structural regions (16). Electrical device (100) according to one of the preceding claims, characterized in that in the region of at least one structural region (16) facing an edge (1 Of) of the circuit carrier, the second insulation structure (11.2) in two edge section points (f1, f2) spaced apart from one another ) ends. Electrical device (100) according to one of the preceding claims, characterized in that at least one of the closed framed structural regions (16) up to a distance of <7 mm, preferably <5 mm, in particular <3 mm to an edge section of the circuit carrier ( 10), whereby a corresponding section of the second insulation structure (11.2) extends to this edge section of the circuit carrier (10) and/or protrudes from it, in particular with a projection dimension of up to 10 mm, for example up to 5 mm. Electrical device (100) according to one of the preceding claims, characterized in that the second insulation structure (11.2) has a plurality of closed-framed structural regions (16) and/or closed-framed groups of at least two structural regions (16, 16.b1, 16.b2, 16 .c1, 16.c2, 16.c3), in particular in a structural composite (B, C, D, F) adjacent to one another. Electrical device (100) according to one of the preceding claims, characterized in that the second insulation structure (11.2) has at least one structural region (16) or a group of at least two structural regions (16) and at least one further Structural area (16) or a further group of at least two structural areas (16) each nested inside each other and closed. Method for forming an electrical device (100), in particular according to one of the preceding claims, with the following method steps: a) providing at least one circuit carrier (10) comprising a carrier substrate (11) made of an electrical insulating material (12), on at least one outer surface of the circuit carrier (10), an electrical conductor structure (15) is formed with structural regions (16) which are electrically insulated from one another by a first insulation structure (11.1) made of the insulating material (12) of the carrier substrate (11), b) arranging one at least in certain areas second dam-like insulation structure (11.2) on the first insulation structure (11.1), wherein at least one electrically insulated structural region (16, 16.a1) and / or at least one group of at least two adjacent electrically insulated structural regions (16, 16.b1 , 16.b2, 16.c1, 16.c2, 16.c3) of the conductor structure (15) is/are framed with a closed dam course in such a way that the second insulation structure (11. 2) each protrudes beyond the surface of the at least one or more framed structural regions (16). Method according to one of the preceding claims, characterized in that the second insulation structure (11.2) is formed by means of a dispensing process as a dispensing bead applied at least in one layer or by means of an injection molding process, in particular transfer molding or direct injection molding, as a molding of an injection molding tool (300). becomes. Method according to one of the preceding claims, characterized in that the second insulation structure (11.2) is formed before electrical contacting of the conductor structure (15) with at least one electrical component (90).