WO2024067147A1 - Power amplifier - Google Patents

Power amplifier Download PDF

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Publication number
WO2024067147A1
WO2024067147A1 PCT/CN2023/118933 CN2023118933W WO2024067147A1 WO 2024067147 A1 WO2024067147 A1 WO 2024067147A1 CN 2023118933 W CN2023118933 W CN 2023118933W WO 2024067147 A1 WO2024067147 A1 WO 2024067147A1
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WO
WIPO (PCT)
Prior art keywords
power amplifier
harmonic
input
signal
network
Prior art date
Application number
PCT/CN2023/118933
Other languages
French (fr)
Chinese (zh)
Inventor
谈建国
丁冲
余敏德
魏伟伟
秦天银
Original Assignee
中兴通讯股份有限公司
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Publication of WO2024067147A1 publication Critical patent/WO2024067147A1/en

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42Modifications of amplifiers to extend the bandwidth
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits

Definitions

  • the embodiments of the present disclosure relate to the field of signal processing, and in particular, to a power amplifier.
  • the second harmonic impedance required for the corresponding working frequency band cannot be achieved through network matching, and because its impedance value is equal to a fundamental impedance value within the working frequency band, it has a large real part.
  • This second harmonic impedance condition will greatly affect the efficiency index of the cross-octave power amplifier. Since this problem cannot be solved by using only a passive matching network, similar to active load modulation, second harmonic active load modulation can be introduced to change the second harmonic impedance to improve the efficiency index of the corresponding frequency band.
  • the second harmonic component is injected into the output network of the power amplifier to perform second harmonic active load modulation.
  • the second harmonic loading network used will inevitably affect the matching network of the original power amplifier, resulting in the difficulty of second harmonic active load modulation technology being set in an ultra-wideband power amplifier.
  • the embodiments of the present disclosure provide a power amplifier to at least solve the problem in the related art that it is difficult to inject a second harmonic component into the output network of the power amplifier to perform second harmonic active load modulation in an ultra-wideband power amplifier.
  • a power amplifier comprising: a coupler and a harmonic generation network, wherein the coupler is connected to the harmonic generation network, wherein:
  • a coupler is configured to couple a portion of the input signal from the input signal of the power amplifier to obtain a fundamental wave signal, and output the fundamental wave signal to the harmonic generation network;
  • the harmonic generation network is configured to generate harmonic components based on the fundamental wave signal and input the harmonic components into a power amplifier input circuit of the power amplifier.
  • the power amplifier of the embodiment of the present disclosure includes: a power amplifier, including: a coupler and a harmonic generating network, the coupler is connected to the harmonic generating network, wherein the coupler is configured to couple out a part of the input signal from the input signal of the power amplifier to obtain a fundamental signal, and output it to the harmonic generating network; the harmonic generating network is configured to generate harmonic components based on the fundamental signal, and input the harmonic components into the power amplifier input circuit of the power amplifier.
  • FIG1 is a block diagram of a power amplifier according to an embodiment of the present disclosure.
  • FIG2 is a block diagram of a power amplifier according to an exemplary embodiment of the present disclosure.
  • FIG3 is a second block diagram of a power amplifier according to an exemplary embodiment of the present disclosure.
  • FIG4 is a block diagram of a power amplifier according to an exemplary embodiment of the present disclosure.
  • FIG5 is a block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure
  • FIG6 is a functional block diagram of a coupler according to an exemplary embodiment of the present disclosure.
  • FIG7 is a schematic block diagram of a harmonic generation network according to an exemplary embodiment of the present disclosure.
  • FIG8 is a result block diagram of a circuit matching network IMN according to this embodiment.
  • FIG9 is a schematic diagram showing the effect of the phase and power of the loaded second harmonic on the performance of the power amplifier according to the present embodiment
  • FIG10 is a schematic diagram of impedance distribution of a cross-octave power amplifier matching according to this embodiment
  • FIG11 is a second block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure
  • FIG12 is a block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure
  • FIG. 13 is a block diagram of a power amplifier with harmonic injection based on a DEPA architecture according to this embodiment.
  • FIG1 is a block diagram of a power amplifier according to an embodiment of the present disclosure.
  • the power amplifier includes: a coupler and a harmonic generating network.
  • the coupler is connected to the harmonic generating network, wherein the coupler is configured to couple a portion of the input signal from the input signal of the power amplifier to obtain a fundamental signal, and output the fundamental signal to the harmonic generating network;
  • the harmonic generating network is configured to generate a harmonic component based on the fundamental signal, and input the harmonic component into a power amplifier input circuit of the power amplifier.
  • FIG. 2 is a block diagram of a power amplifier according to an exemplary embodiment of the present disclosure.
  • the power amplifier also includes: a signal processing device, a plurality of RF channels and a first bridge, wherein the signal processing device is connected to the plurality of RF channels, and the plurality of RF channels are connected to the first bridge; at least one of the plurality of RF channels is provided with a harmonic generating network, a coupler is connected to the signal processing device, and each RF channel is provided with a power amplifier input circuit; the signal processing device is configured to divide an input signal into a plurality of input signals and input them into corresponding RF channels, and one input signal is input into one RF channel; the first bridge is configured to synthesize the multi-path signals of the plurality of RF channels into an output signal.
  • FIG. 3 is a second block diagram of a power amplifier according to an exemplary embodiment of the present disclosure.
  • the power amplifier input circuit includes: a power amplifier tube and a circuit matching network, wherein each RF channel is provided with a connected circuit matching network and a power amplifier tube, the signal processing device is respectively connected to a plurality of the circuit matching networks, and a plurality of the power amplifier tubes are connected to the first bridge, wherein each of the circuit matching networks is configured to match the input of the signal processing device and the power amplifier tube; and each of the power amplifier tubes is configured to amplify the input signal on the RF channel where it is located.
  • the circuit matching network is configured to combine the input signal with the harmonic signal generated by the harmonic generating network and output them to the input end of the power amplifier tube; or to output the input signal to the input end of the power amplifier tube.
  • one end of the coupler is connected to the output end of the signal processing device, and the remaining ports are connected to the harmonic generating network and the circuit matching network respectively.
  • Figure 4 is a block diagram of the power amplifier according to an exemplary embodiment of the present disclosure. As shown in Figure 4, one end of the coupler is connected to the input end of the signal processing device, and the remaining ports are respectively connected to the harmonic generating network and the circuit matching network. The coupler is configured to select a partial frequency signal of the input signal to obtain a fundamental signal.
  • the above-mentioned signal processing device may be a power divider or a second bridge.
  • the present embodiment is described below by taking the signal processing device as a power divider as an example.
  • FIG. 5 is a block diagram of a power amplifier with harmonic injection based on the LMBA architecture according to an exemplary embodiment of the present disclosure, as shown in Figure 5, and in order to improve and expand the limitation of the working frequency band of the LMBA, this embodiment introduces a harmonic generation network in the control branch to adjust the working state of the LMBA and improve its working performance.
  • the power divider is used to divide the input signal into two or more channels to each RF channel; the coupler is used to couple a part of the signal into the harmonic generation network; the harmonic generation network: to generate harmonic components with specific amplitude and phase, and inject them into the control branch; the power amplifier tube is used to amplify the signal, and the bridge is used to synthesize or power distribute the signal (where the branch with the harmonic generation network is the control branch); IMN1/IMN2/IMN3 are circuit matching networks.
  • the performance of some frequency bands will be far lower than the theoretical performance.
  • the amplitude and phase of the harmonics are modulated at the output, which greatly improves the output power and efficiency of the LMBA power amplifier and significantly expands its operating bandwidth.
  • FIG6 is a principle block diagram of a coupler according to an exemplary embodiment of the present disclosure.
  • the coupler includes: an input terminal 201, a through terminal 202, and a coupling terminal 203, wherein the fundamental wave signal is coupled from the input terminal 201 to the coupling terminal 203, and the fundamental wave signal is obtained by directing from the input terminal 201 to the through terminal 202 in the full frequency band.
  • the coupling terminal of the coupler has a frequency selection characteristic: only part of the frequency can be coupled from the 201 port to the coupling 203 port; and the full frequency band is directly passed from the 201 port to the 202 port.
  • FIG7 is a principle block diagram of a harmonic generation network according to an exemplary embodiment of the present disclosure.
  • the harmonic generation network includes a nonlinear circuit, a bandpass filter, a phase shifter and a harmonic gain amplifier connected in sequence.
  • the harmonic gain amplifier is connected to the circuit matching network, wherein the nonlinear circuit is configured to perform nonlinear processing on the fundamental signal to generate multiple harmonic components; the bandpass filter is configured to select a target harmonic component from the multiple harmonic components; the phase shifter is configured to adjust the phase of the target harmonic component to obtain a harmonic signal; the harmonic gain amplifier is configured to amplify the harmonic signal and input it to the input end of the power amplifier tube.
  • the coupled fundamental signal is input into a nonlinear circuit to generate rich harmonic components; the second and third harmonics are then selected through a bandpass filter; the residual signal is passed through a phase shifter to adjust the phase of the harmonic component (the shifted phase depends on the phase requirement of the harmonic injection); finally, the harmonic signal is amplified by the harmonic gain amplifier and input into the power amplifier input circuit.
  • FIG8 is a result block diagram of the circuit matching network IMN according to this embodiment.
  • the main function of IMN is to match the power divider at the input end with the input of the power amplifier tube, and has the function of connecting the harmonic generation network.
  • Mode 1 When the low frequency band f1 ⁇ f0 ⁇ f2, the function of IMN is to combine the input signal and the harmonic signal and output them to the input end of the power amplifier tube;
  • Mode 2 When the low frequency band f2 ⁇ f0 ⁇ f3, the function of IMN is to make the input signal as high as possible output to the input end of the power amplifier tube.
  • the second harmonic active load loading scheme its second harmonic active load modulation process follows the same rule as the fundamental load modulation, that is, the impedance at the coupler port corresponding to the balanced power amplifier can be calculated by the following formula:
  • Z0 is the original port impedance of the coupler
  • Ipk and Iba are the output currents of the peak control amplifier and the single main amplifier, respectively, and is the current phase difference between the peak amplifier and the main amplifier at the relative port.
  • FIG9 is a schematic diagram of the effect of the phase and power of the loaded second harmonic on the performance of the power amplifier according to the present embodiment.
  • the harmonic active load modulation technology in the entire operating frequency band.
  • the functions of active devices and circuits such as couplers used are not the same as those within the operating frequency band, which may render the harmonic active load modulation ineffective.
  • the harmonic impedance outside the operating frequency band is likely to present a pure reactance characteristic, and harmonic active load modulation cannot be used for harmonic impedances with such characteristics.
  • harmonic impedance matching and harmonic active load modulation techniques can be used in different operating frequency bands, respectively, to globally optimize the performance of the designed power amplifier according to the characteristics of different operating frequency bands.
  • FIG10 is a schematic diagram of impedance distribution of a cross-octave power amplifier according to the present embodiment.
  • the impedance solution region of the current source end face for the double-octave expansion is given.
  • the fundamental impedance of each frequency point should converge into one region, that is, the real part of the fundamental impedance is within a limited range.
  • the second or third harmonic impedance of band 1 is the position of band 3, which is bound to reduce the working efficiency of band 1.
  • the second or third harmonic impedance of band 1 is located in the new impedance region by means of harmonic injection, as shown in FIG10 (b). In this way, when band 1 is working, the harmonic impedance of the power amplifier at the current source end face is pulled with the change of the injected harmonic signal, thereby improving the working efficiency of band 1.
  • the multiple power amplifier tubes include one or more main power amplifier tubes and one or more peak power amplifier tubes, as shown in Figure 5, the harmonic generating network is arranged on the radio frequency channel where the one or more main power amplifier tubes are located, the power amplifier tube 3 is the main power amplifier tube, and the harmonic generating network is arranged on the radio frequency channel where the power amplifier tube 3 is located.
  • FIG 11 is a second block diagram of a power amplifier with harmonic injection based on an LMBA architecture according to an exemplary embodiment of the present disclosure.
  • power amplifier tube 1 and power amplifier tube 2 are peak power amplifier tubes, and the harmonic generating network is arranged on the RF channel where the one or more peak power amplifier tubes are located, that is, on the RF channel where power amplifier tube 1 and power amplifier tube 2 are located.
  • FIG12 is a block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure. As shown in FIG12 , relative to FIG11 , the placement position of the coupler places the coupler input end before the power divider. Similar to the coupling loading position in FIG5 , it can also be placed at the front end, even at the front end of the pre-stage driver amplifier.
  • FIG. 13 is a block diagram of a power amplifier based on harmonic injection of the DEPA architecture according to this embodiment. As shown in Figure 13, the main power amplifier end signal of the harmonic injection is injected, and the similar signal coupling position can be the front input end of the module; the harmonic injection branch can also be changed to the peak branch.
  • DEPA distributed efficient power amplifier
  • harmonic injection is used to improve the degree of harmonic impedance mismatch and enhance the amplifier efficiency in the low-frequency band.
  • the amplifier architecture with high efficiency across octaves such as the LMBA architecture
  • its harmonics may be between the frequency bands f2-f3.
  • the high-order harmonic impedance of f1 is the impedance between f2-f3 that satisfies the n*f1 frequency point. This impedance conflicts with the high-efficiency working state of the amplifier, and thus reduces the efficiency at the f1 frequency band. Therefore, by injecting harmonic components, the efficiency at the low frequency band f1 can be improved.
  • the advantages of injecting harmonics at the input are as follows: when used in an inter-octave frequency band, the coupler is bidirectional. When the harmonic components generated by the frequency doubler can be coupled to the signal path, then when working in the high frequency band, its signal can also be coupled to the harmonic generation network. In this way, the harmonic generation network will additionally lose energy and reduce and deteriorate the efficiency and linearity of the high frequency band.
  • the devices used in the harmonic generation network need to meet the high power working requirements, which puts higher requirements on the devices of the harmonic generation network and directly increases the product cost.
  • the amplifiers in the amplifier architecture are divided into two categories: the main amplifiers work in both low-power and high-power states, and the peak amplifiers work only in high-power states; harmonic injection into the main amplifier helps to perform load harmonic modulation on the output of the amplifier at both low-power and high-power states; while harmonic injection into the peak amplifier only performs load modulation on the output of the amplifier at high-power states.
  • the choice of a certain mode depends on which power area and which amplifier tube efficiency needs to be improved during the load modulation process: for example, through reasonable circuit design, the main amplifier can have high efficiency in both low-power and high-power states, and only the peak amplifier has deteriorated efficiency in the low-frequency band. At this time, only harmonic injection into the peak amplifier is needed to effectively improve the efficiency of the peak amplifier.
  • modules or steps of the present disclosure can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation.
  • the present disclosure is not limited to any specific combination of hardware and software.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
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  • Amplifiers (AREA)

Abstract

Provided in the embodiments of the present disclosure is a power amplifier, comprising: a coupler and a harmonic generation network, the coupler being connected to the harmonic generation network, wherein the coupler is configured to couple a portion of input signals among input signals of the power amplifier, so as to obtain a fundamental-wave signal, and output the fundamental-wave signal to the harmonic generation network; and the harmonic generation network is configured to generate a harmonic component on the basis of the fundamental-wave signal, and input the harmonic component into a power-amplifier input circuit of the power amplifier.

Description

一种功率放大器A power amplifier
相关申请的交叉引用CROSS-REFERENCE TO RELATED APPLICATIONS
本公开基于2022年09月29日提交的发明名称为“一种功率放大器”的中国专利申请202211219421.4,并且要求该专利申请的优先权,通过引用将其所公开的内容全部并入本公开。The present disclosure is based on Chinese patent application 202211219421.4 filed on September 29, 2022, with the invention name “A Power Amplifier”, and claims the priority of the patent application, and all the contents disclosed therein are incorporated into the present disclosure by reference.
技术领域Technical Field
本公开实施例涉及信号处理领域,具体而言,涉及一种功率放大器。The embodiments of the present disclosure relate to the field of signal processing, and in particular, to a power amplifier.
背景技术Background technique
当功放的工作带宽超过一个倍频程时,必定存在部分工作频段的二次谐波频率落在整体工作带宽内的情况。这种情况下,对应工作频段所需的二次谐波阻抗将无法通过网络匹配实现,且由于其阻抗值等于工作频带内的某一基波阻抗值,故具有较大的实部,这种二次谐波阻抗条件将极大地影响跨倍频程功放的效率指标。由于仅使用无源匹配网络已经无法解决这一问题,故与有源负载调制类似,可以引入二次谐波有源负载调制,从而改变二次谐波阻抗来提升对应频段的效率指标。相关技术中在功放的输出网络中注入二次谐波分量从而进行二次谐波有源负载调制,然而所采用的二次谐波加载网络必然会对原始功放的匹配网络产生影响,导致二次谐波有源负载调制技术很难应设置为超宽带功放中。When the working bandwidth of the power amplifier exceeds one octave, there must be a situation where the second harmonic frequency of some working frequency bands falls within the overall working bandwidth. In this case, the second harmonic impedance required for the corresponding working frequency band cannot be achieved through network matching, and because its impedance value is equal to a fundamental impedance value within the working frequency band, it has a large real part. This second harmonic impedance condition will greatly affect the efficiency index of the cross-octave power amplifier. Since this problem cannot be solved by using only a passive matching network, similar to active load modulation, second harmonic active load modulation can be introduced to change the second harmonic impedance to improve the efficiency index of the corresponding frequency band. In the related technology, the second harmonic component is injected into the output network of the power amplifier to perform second harmonic active load modulation. However, the second harmonic loading network used will inevitably affect the matching network of the original power amplifier, resulting in the difficulty of second harmonic active load modulation technology being set in an ultra-wideband power amplifier.
针对相关技术中在功放的输出网络中注入二次谐波分量进行二次谐波有源负载调制很难应设置为超宽带功放中的问题,尚未提出解决方案。In view of the problem in the related art that injecting a second harmonic component into the output network of the power amplifier for second harmonic active load modulation is difficult to be set in an ultra-wideband power amplifier, no solution has been proposed yet.
发明内容Summary of the invention
本公开实施例提供了一种功率放大器,以至少解决相关技术中在功放的输出网络中注入二次谐波分量进行二次谐波有源负载调制很难应设置为超宽带功放中的问题。The embodiments of the present disclosure provide a power amplifier to at least solve the problem in the related art that it is difficult to inject a second harmonic component into the output network of the power amplifier to perform second harmonic active load modulation in an ultra-wideband power amplifier.
根据本公开的一个实施例,提供了一种功率放大器,包括:耦合器和谐波产生网络,耦合器与谐波产生网络连接,其中,According to an embodiment of the present disclosure, a power amplifier is provided, comprising: a coupler and a harmonic generation network, wherein the coupler is connected to the harmonic generation network, wherein:
耦合器,设置为从功率放大器的输入信号中耦合出一部分输入信号,得到基波信号,并将基波信号输出至谐波产生网络;A coupler is configured to couple a portion of the input signal from the input signal of the power amplifier to obtain a fundamental wave signal, and output the fundamental wave signal to the harmonic generation network;
谐波产生网络,设置为基于基波信号生成谐波分量,并将谐波分量输入到功率放大器的功放输入电路中。The harmonic generation network is configured to generate harmonic components based on the fundamental wave signal and input the harmonic components into a power amplifier input circuit of the power amplifier.
本公开实施例的功率放大器包括:功率放大器,包括:耦合器和谐波产生网络,耦合器与谐波产生网络连接,其中,所述耦合器,设置为从所述功率放大器的输入信号中耦合出一部分输入信号,得到基波信号,并输出至所述谐波产生网络;所述谐波产生网络,设置为基于所述基波信号生成谐波分量,并将所述谐波分量输入到所述功率放大器的功放输入电路中设置为。 The power amplifier of the embodiment of the present disclosure includes: a power amplifier, including: a coupler and a harmonic generating network, the coupler is connected to the harmonic generating network, wherein the coupler is configured to couple out a part of the input signal from the input signal of the power amplifier to obtain a fundamental signal, and output it to the harmonic generating network; the harmonic generating network is configured to generate harmonic components based on the fundamental signal, and input the harmonic components into the power amplifier input circuit of the power amplifier.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是根据本公开实施例的功率放大器的框图;FIG1 is a block diagram of a power amplifier according to an embodiment of the present disclosure;
图2是根据本公开示例性实施例的功率放大器的框图一;FIG2 is a block diagram of a power amplifier according to an exemplary embodiment of the present disclosure;
图3是根据本公开示例性实施例的功率放大器的框图二;FIG3 is a second block diagram of a power amplifier according to an exemplary embodiment of the present disclosure;
图4是根据本公开示例性实施例的功率放大器的框图三;FIG4 is a block diagram of a power amplifier according to an exemplary embodiment of the present disclosure;
图5是根据本公开示例性实施例的基于LMBA架构的谐波注入的功率放大器的框图一;FIG5 is a block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure;
图6是根据本公开示例性实施例的耦合器的原理框图;FIG6 is a functional block diagram of a coupler according to an exemplary embodiment of the present disclosure;
图7是根据本公开示例性实施例的谐波产生网络的原理框图;FIG7 is a schematic block diagram of a harmonic generation network according to an exemplary embodiment of the present disclosure;
图8是根据本实施例的电路匹配网络IMN的结果框图;FIG8 is a result block diagram of a circuit matching network IMN according to this embodiment;
图9是根据本实施例的加载二次谐波相位与功率对功放性能的示意图;FIG9 is a schematic diagram showing the effect of the phase and power of the loaded second harmonic on the performance of the power amplifier according to the present embodiment;
图10是根据本实施例的跨倍频程功放匹配阻抗分布示意图;FIG10 is a schematic diagram of impedance distribution of a cross-octave power amplifier matching according to this embodiment;
图11是根据本公开示例性实施例的基于LMBA架构的谐波注入的功率放大器的框图二;FIG11 is a second block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure;
图12是根据本公开示例性实施例的基于LMBA架构的谐波注入的功率放大器的框图三;FIG12 is a block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure;
图13是根据本实施例的基于DEPA架构的谐波注入的功率放大器的框图。FIG. 13 is a block diagram of a power amplifier with harmonic injection based on a DEPA architecture according to this embodiment.
具体实施方式Detailed ways
下文中将参考附图并结合实施例来详细说明本公开的实施例。Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and in combination with the embodiments.
需要说明的是,本公开的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是设置为区别类似的对象,而不必设置为描述特定的顺序或先后次序。It should be noted that the terms "first", "second", etc. in the specification and claims of the present disclosure and the above-mentioned drawings are set to distinguish similar objects, and are not necessarily set to describe a specific order or sequence.
本公开实施例提供了一种功率放大器,图1是根据本公开实施例的功率放大器的框图,如图1所示,包括:耦合器和谐波产生网络,耦合器与谐波产生网络连接,其中,该耦合器,设置为从该功率放大器的输入信号中耦合出一部分输入信号,得到基波信号,并将该基波信号输出至该谐波产生网络;该谐波产生网络,设置为基于该基波信号生成谐波分量,并将该谐波分量输入到该功率放大器的功放输入电路中。An embodiment of the present disclosure provides a power amplifier. FIG1 is a block diagram of a power amplifier according to an embodiment of the present disclosure. As shown in FIG1 , the power amplifier includes: a coupler and a harmonic generating network. The coupler is connected to the harmonic generating network, wherein the coupler is configured to couple a portion of the input signal from the input signal of the power amplifier to obtain a fundamental signal, and output the fundamental signal to the harmonic generating network; the harmonic generating network is configured to generate a harmonic component based on the fundamental signal, and input the harmonic component into a power amplifier input circuit of the power amplifier.
图2是根据本公开示例性实施例的功率放大器的框图一,如图2所示,该功率放大器还包括:信号处理设备、多个射频通道以及第一电桥,其中,该信号处理设备与该多个射频通道连接,该多个射频通道与该第一电桥连接;该多个射频通道中的至少一个射频通道上设置有一个该谐波产生网络,耦合器与信号处理设备连接,每个射频通道上设置有一个该功放输入电路;该信号处理设备,设置为将输入信号分成多路输入信号并输入到对应的射频通道,一路输入信号输入到一个射频通道上;该第一电桥,设置为将该多个射频通道的多路信号合成为输出信号。Figure 2 is a block diagram of a power amplifier according to an exemplary embodiment of the present disclosure. As shown in Figure 2, the power amplifier also includes: a signal processing device, a plurality of RF channels and a first bridge, wherein the signal processing device is connected to the plurality of RF channels, and the plurality of RF channels are connected to the first bridge; at least one of the plurality of RF channels is provided with a harmonic generating network, a coupler is connected to the signal processing device, and each RF channel is provided with a power amplifier input circuit; the signal processing device is configured to divide an input signal into a plurality of input signals and input them into corresponding RF channels, and one input signal is input into one RF channel; the first bridge is configured to synthesize the multi-path signals of the plurality of RF channels into an output signal.
图3是根据本公开示例性实施例的功率放大器的框图二,如图3所示,该功放输入电路包括:功放管与电路匹配网络,其中,每个射频通道上均设置有相连的一个电路匹配网络与一个功放管,该信号处理设备分别与多个该电路匹配网络连接,多个该功放管均与该第一电桥连接,其中,每个该电路匹配网络,设置为匹配该信号处理设备与该功放管的输入;每个该功放管,设置为对所在射频通道上的输入信号进行放大处理。Figure 3 is a second block diagram of a power amplifier according to an exemplary embodiment of the present disclosure. As shown in Figure 3, the power amplifier input circuit includes: a power amplifier tube and a circuit matching network, wherein each RF channel is provided with a connected circuit matching network and a power amplifier tube, the signal processing device is respectively connected to a plurality of the circuit matching networks, and a plurality of the power amplifier tubes are connected to the first bridge, wherein each of the circuit matching networks is configured to match the input of the signal processing device and the power amplifier tube; and each of the power amplifier tubes is configured to amplify the input signal on the RF channel where it is located.
在一实施例中,该电路匹配网络,设置为将该输入信号与该谐波产生网络产生的谐波信号合并输出到该功放管的输入端;或者将该输入信号输出到该功放管的输入端。In one embodiment, the circuit matching network is configured to combine the input signal with the harmonic signal generated by the harmonic generating network and output them to the input end of the power amplifier tube; or to output the input signal to the input end of the power amplifier tube.
如图3所示,该耦合器的一端与该信号处理设备的输出端连接,其余端口分别与该谐波产生网络和该电路匹配网络连接。As shown in FIG. 3 , one end of the coupler is connected to the output end of the signal processing device, and the remaining ports are connected to the harmonic generating network and the circuit matching network respectively.
图4是根据本公开示例性实施例的功率放大器的框图三,如图4所示,该耦合器的一端与该信号处理设备的输入端连接,其余端口分别与该谐波产生网络和该电路匹配网络连接,该耦合器,设置为选择该输入信号的部分频率信号,得到基波信号。Figure 4 is a block diagram of the power amplifier according to an exemplary embodiment of the present disclosure. As shown in Figure 4, one end of the coupler is connected to the input end of the signal processing device, and the remaining ports are respectively connected to the harmonic generating network and the circuit matching network. The coupler is configured to select a partial frequency signal of the input signal to obtain a fundamental signal.
本实施例中,上述的信号处理设备可以为功分器,也可以为第二电桥。In this embodiment, the above-mentioned signal processing device may be a power divider or a second bridge.
下面以信号处理设备为功分器为例,对本实施例进行说明。The present embodiment is described below by taking the signal processing device as a power divider as an example.
负载调制平衡功率放大器(Load-Modulated Balanced Amplifier,简称为LMBA)架构为输入端通过电桥或者功分器把信号分为多个输送到各个射频通道中,再在输出端通过电桥进行合成。图5是根据本公开示例性实施例的基于LMBA架构的谐波注入的功率放大器的框图一,如图5所示,而本实施例为了提升和拓展LMBA工作频带的限制,在控制支路引入谐波产生网络,来调整LMBA的工作状态,提升其工作性能。功分器为把输入信号分成两路或多路到各个射频通道;耦合器为了把信号耦合一部分进入谐波产生网络;谐波产生网络:来生成具有特定幅度和相位的谐波分量,并注入到控制支路中;功放管为放大信号,电桥为了合成或者功率分配信号(其中谐波具有谐波产生网络的支路为控制支路);IMN1/IMN2/IMN3为电路匹配网络。The architecture of the load-modulated balanced power amplifier (LMBA) is that the input end divides the signal into multiple signals and transmits them to each RF channel through a bridge or a power divider, and then synthesizes them through a bridge at the output end. Figure 5 is a block diagram of a power amplifier with harmonic injection based on the LMBA architecture according to an exemplary embodiment of the present disclosure, as shown in Figure 5, and in order to improve and expand the limitation of the working frequency band of the LMBA, this embodiment introduces a harmonic generation network in the control branch to adjust the working state of the LMBA and improve its working performance. The power divider is used to divide the input signal into two or more channels to each RF channel; the coupler is used to couple a part of the signal into the harmonic generation network; the harmonic generation network: to generate harmonic components with specific amplitude and phase, and inject them into the control branch; the power amplifier tube is used to amplify the signal, and the bridge is used to synthesize or power distribute the signal (where the branch with the harmonic generation network is the control branch); IMN1/IMN2/IMN3 are circuit matching networks.
在宽带功放设计中,部分频带的性能会远低于理论性能。如图所示,通过在LMBA的输入端注入谐波,使在输出端进行谐波的幅度和相位调制,极大提升LMBA功放的输出功率和效率,显著扩展其工作带宽。In broadband power amplifier design, the performance of some frequency bands will be far lower than the theoretical performance. As shown in the figure, by injecting harmonics at the input of the LMBA, the amplitude and phase of the harmonics are modulated at the output, which greatly improves the output power and efficiency of the LMBA power amplifier and significantly expands its operating bandwidth.
图6是根据本公开示例性实施例的耦合器的原理框图,如图6所示,耦合器包括:输入端201,直通端202,耦合端203,其中,该基波信号从该输入端201耦合进入到该耦合端203,且从该输入端201到该直通端202全频段直通,得到该基波信号。耦合器耦合端具有频率选择特性:部分频率才能从201端口耦合进入到耦合203端口;从201端口到202端口全频段直通。FIG6 is a principle block diagram of a coupler according to an exemplary embodiment of the present disclosure. As shown in FIG6 , the coupler includes: an input terminal 201, a through terminal 202, and a coupling terminal 203, wherein the fundamental wave signal is coupled from the input terminal 201 to the coupling terminal 203, and the fundamental wave signal is obtained by directing from the input terminal 201 to the through terminal 202 in the full frequency band. The coupling terminal of the coupler has a frequency selection characteristic: only part of the frequency can be coupled from the 201 port to the coupling 203 port; and the full frequency band is directly passed from the 201 port to the 202 port.
图7是根据本公开示例性实施例的谐波产生网络的原理框图,如图7所示,谐波产生网络包括依次连接的非线性电路、带通滤波器、移相器及谐波增益放大器,该谐波增益放大器与该电路匹配网络连接,其中,该非线性电路,设置为对该基波信号进行非线性处理,产生多个谐波分量;该带通滤波器,设置为从该多个谐波分量选择目标谐波分量;该移相器,设置为调整该目标谐波分量的相位,得到谐波信号;该谐波增益放大器,设置为将该谐波信号放大后输入到该功放管的输入端。把耦合的基波信号输入到一个非线性电路中,产生丰富的谐波成分;再通过带通滤波器选择出2次、3次谐波;把残留信号通过一个移相器来调整谐波分量的相位(移动相位取决于谐波注入的相位需求);最后通过谐波增益放大器把谐波信号放大后输入到功放输入电路中。FIG7 is a principle block diagram of a harmonic generation network according to an exemplary embodiment of the present disclosure. As shown in FIG7 , the harmonic generation network includes a nonlinear circuit, a bandpass filter, a phase shifter and a harmonic gain amplifier connected in sequence. The harmonic gain amplifier is connected to the circuit matching network, wherein the nonlinear circuit is configured to perform nonlinear processing on the fundamental signal to generate multiple harmonic components; the bandpass filter is configured to select a target harmonic component from the multiple harmonic components; the phase shifter is configured to adjust the phase of the target harmonic component to obtain a harmonic signal; the harmonic gain amplifier is configured to amplify the harmonic signal and input it to the input end of the power amplifier tube. The coupled fundamental signal is input into a nonlinear circuit to generate rich harmonic components; the second and third harmonics are then selected through a bandpass filter; the residual signal is passed through a phase shifter to adjust the phase of the harmonic component (the shifted phase depends on the phase requirement of the harmonic injection); finally, the harmonic signal is amplified by the harmonic gain amplifier and input into the power amplifier input circuit.
图8是根据本实施例的电路匹配网络IMN的结果框图,如图8所示,IMN主要作用是匹配输入端的功分器与功放管的输入,并具有连接谐波产生网络的功能。模式一:在低频段f1<f0<f2时,IMN的作用是使输入信号和谐波信号合并输出到功放管输入端;模式二:在低频段f2<f0<f3时,IMN的作用是使输入信号尽可能高的输出到功放管输入端。FIG8 is a result block diagram of the circuit matching network IMN according to this embodiment. As shown in FIG8, the main function of IMN is to match the power divider at the input end with the input of the power amplifier tube, and has the function of connecting the harmonic generation network. Mode 1: When the low frequency band f1<f0<f2, the function of IMN is to combine the input signal and the harmonic signal and output them to the input end of the power amplifier tube; Mode 2: When the low frequency band f2<f0<f3, the function of IMN is to make the input signal as high as possible output to the input end of the power amplifier tube.
如图5中所示的二次谐波有源负载加载方案,其二次谐波有源负载调制过程与基波负载调制遵循相同的规律,即平衡式功放对应的耦合器端口处的阻抗可由以下公式计算:
As shown in Figure 5, the second harmonic active load loading scheme, its second harmonic active load modulation process follows the same rule as the fundamental load modulation, that is, the impedance at the coupler port corresponding to the balanced power amplifier can be calculated by the following formula:
式中,Z0为耦合器原始端口阻抗,Ipk与Iba分别为峰值控制功放与单个主功放的输出电流,则为峰值功放与相对端口主功放的电流相位差。从上述公式可以看出,从峰值功放支路调整二次谐波电流的相位和幅度可以对主功放输出端口的阻抗进行二次谐波有源负载调制。经由匹配网络的变换后,这种调制效应可以传递到晶体管(功放管)端口,从而改变主功放的性能。In the formula, Z0 is the original port impedance of the coupler, Ipk and Iba are the output currents of the peak control amplifier and the single main amplifier, respectively, and is the current phase difference between the peak amplifier and the main amplifier at the relative port. It can be seen from the above formula that adjusting the phase and amplitude of the second harmonic current from the peak amplifier branch can perform second harmonic active load modulation on the impedance of the output port of the main amplifier. After transformation by the matching network, this modulation effect can be transmitted to the transistor (amplifier) port, thereby changing the performance of the main amplifier.
图9是根据本实施例的加载二次谐波相位与功率对功放性能的示意图,如图9所示,对于跨倍频程高回退效率功放来说,在整个工作频带都启用谐波有源负载调制技术是不现实的。在工作频带外,有源器件和使用的耦合器等电路的功能与工作频带内并不相同,这可能使得谐波有源负载调制失效。此外,工作频带外的谐波阻抗很可能将呈现纯电抗特性,对于这种特性的谐波阻抗是无法使用谐波有源负载调制的。针对这种情况,可以在不同的工作频带分别使用谐波阻抗匹配和谐波有源负载调制技术,根据不同工作频带的特点全局优化所设计的功放的性能。FIG9 is a schematic diagram of the effect of the phase and power of the loaded second harmonic on the performance of the power amplifier according to the present embodiment. As shown in FIG9 , for a high back-off efficiency power amplifier across octaves, it is unrealistic to enable the harmonic active load modulation technology in the entire operating frequency band. Outside the operating frequency band, the functions of active devices and circuits such as couplers used are not the same as those within the operating frequency band, which may render the harmonic active load modulation ineffective. In addition, the harmonic impedance outside the operating frequency band is likely to present a pure reactance characteristic, and harmonic active load modulation cannot be used for harmonic impedances with such characteristics. In view of this situation, harmonic impedance matching and harmonic active load modulation techniques can be used in different operating frequency bands, respectively, to globally optimize the performance of the designed power amplifier according to the characteristics of different operating frequency bands.
图10是根据本实施例的跨倍频程功放匹配阻抗分布示意图,如图10所示,给出了电流源端面扩倍频程的阻抗解区域,为了确保跨倍频程功放具有一定额度的输出功率,那么其各个频点的基波阻抗都应该收敛到一个区域内,即基波阻抗的实部在有限的范围内,如图10(a)所示,频段1处频点工作时,在功放输入端未加载谐波的情况下,频段1的二次或三次谐波阻抗为频段3所在的位置,这将注定会降低频段1的工作效率。因此,在低频段频段1工作时,通过谐波注入的方式,使频段1的二次或三次谐波阻抗位于新的阻抗区域内,如图10(b)所示。通过这种方式,在频段1工作状态下,功放在电流源端面的谐波阻抗随着注入谐波信号的变化而发生牵引,从而使频段1的工作效率得到提升。FIG10 is a schematic diagram of impedance distribution of a cross-octave power amplifier according to the present embodiment. As shown in FIG10 , the impedance solution region of the current source end face for the double-octave expansion is given. In order to ensure that the cross-octave power amplifier has a certain amount of output power, the fundamental impedance of each frequency point should converge into one region, that is, the real part of the fundamental impedance is within a limited range. As shown in FIG10 (a), when the frequency point of band 1 is working, when the power amplifier input end is not loaded with harmonics, the second or third harmonic impedance of band 1 is the position of band 3, which is bound to reduce the working efficiency of band 1. Therefore, when band 1 is working in the low frequency band, the second or third harmonic impedance of band 1 is located in the new impedance region by means of harmonic injection, as shown in FIG10 (b). In this way, when band 1 is working, the harmonic impedance of the power amplifier at the current source end face is pulled with the change of the injected harmonic signal, thereby improving the working efficiency of band 1.
在一实施例中,多个该功放管包括一个或多个主功放管、一个或多个峰值功放管,如图5所示,该谐波产生网络设置于该一个或多个主功放管所在射频通道上,功放管3为主功放管,谐波产生网络设置于功放管3所在的射频通道上。In one embodiment, the multiple power amplifier tubes include one or more main power amplifier tubes and one or more peak power amplifier tubes, as shown in Figure 5, the harmonic generating network is arranged on the radio frequency channel where the one or more main power amplifier tubes are located, the power amplifier tube 3 is the main power amplifier tube, and the harmonic generating network is arranged on the radio frequency channel where the power amplifier tube 3 is located.
图11是根据本公开示例性实施例的基于LMBA架构的谐波注入的功率放大器的框图二,如图11所示,功放管1和功放管2为峰值功放管,该谐波产生网络设置于该一个或多个峰值功放管所在射频通道上,即设置于功放管1和功放管2所在的射频通道上。Figure 11 is a second block diagram of a power amplifier with harmonic injection based on an LMBA architecture according to an exemplary embodiment of the present disclosure. As shown in Figure 11, power amplifier tube 1 and power amplifier tube 2 are peak power amplifier tubes, and the harmonic generating network is arranged on the RF channel where the one or more peak power amplifier tubes are located, that is, on the RF channel where power amplifier tube 1 and power amplifier tube 2 are located.
图12是根据本公开示例性实施例的基于LMBA架构的谐波注入的功率放大器的框图三,如图12所示,相对于图11,耦合器的放置位置,把耦合器输入端放置在功分器之前。类似的图5中的耦合加载位置也可以放置在最前端,甚至在前级驱动功放的前端。FIG12 is a block diagram of a power amplifier based on harmonic injection of an LMBA architecture according to an exemplary embodiment of the present disclosure. As shown in FIG12 , relative to FIG11 , the placement position of the coupler places the coupler input end before the power divider. Similar to the coupling loading position in FIG5 , it can also be placed at the front end, even at the front end of the pre-stage driver amplifier.
当面对的结构不是LMBA架构时,比如分布式高效功率放大器(Distributed Efficient Power Amplifier,简称为DEPA)架构,类似的也可以通过前面该的方法对跨倍频程功放进行低频点的谐波注入处理。图13是根据本实施例的基于DEPA架构的谐波注入的功率放大器的框图,如图13所示,谐波注入的主功放端信号注入,类似的信号耦合位置可以使模块最前输入端;谐波注入支路也可变更到峰值路支路。When the structure is not an LMBA architecture, such as a distributed efficient power amplifier (DEPA) architecture, the cross-octave power amplifier can also be processed by the above method to perform low-frequency harmonic injection processing. Figure 13 is a block diagram of a power amplifier based on harmonic injection of the DEPA architecture according to this embodiment. As shown in Figure 13, the main power amplifier end signal of the harmonic injection is injected, and the similar signal coupling position can be the front input end of the module; the harmonic injection branch can also be changed to the peak branch.
针对跨倍频程的LMBA功放,通过谐波注入的方式,改善谐波阻抗失配程度,提升低频段的功放效率。 For LMBA amplifiers that span octaves, harmonic injection is used to improve the degree of harmonic impedance mismatch and enhance the amplifier efficiency in the low-frequency band.
针对具有跨倍频程高效率的功放架构,比如LMBA架构,在低频段f1工作是,其谐波可能是频段f2-f3之间,由于LMBA可工作在f1-f3之间,所以f1的高次谐波阻抗就是f2-f3之间满足n*f1频点的阻抗。这个阻抗与功放高效率工作状态有冲突,因此会降低f1频段处的效率,因此通过注入谐波分量,可以提升低频段f1处的效率。For the amplifier architecture with high efficiency across octaves, such as the LMBA architecture, when working in the low frequency band f1, its harmonics may be between the frequency bands f2-f3. Since the LMBA can work between f1-f3, the high-order harmonic impedance of f1 is the impedance between f2-f3 that satisfies the n*f1 frequency point. This impedance conflicts with the high-efficiency working state of the amplifier, and thus reduces the efficiency at the f1 frequency band. Therefore, by injecting harmonic components, the efficiency at the low frequency band f1 can be improved.
相比于在功放输出端进行谐波注入,在输入端注入谐波的优势:在跨倍频程频带内应用时,耦合器是双向的,当倍频器产生的谐波分量能够耦合到信号通路上,那么当工作在高频段时,其信号也能耦合到谐波产生网络中,这样谐波产生网络将额外地损耗能量降低和恶化高频段的效率和线性、另一方面,在大功率输入下,谐波产生网络所采用器件需要满足高功率工作要求,对谐波产生网络的器件提出了更高要求,直接增加了产品成本。Compared with harmonic injection at the output of the power amplifier, the advantages of injecting harmonics at the input are as follows: when used in an inter-octave frequency band, the coupler is bidirectional. When the harmonic components generated by the frequency doubler can be coupled to the signal path, then when working in the high frequency band, its signal can also be coupled to the harmonic generation network. In this way, the harmonic generation network will additionally lose energy and reduce and deteriorate the efficiency and linearity of the high frequency band. On the other hand, under high power input, the devices used in the harmonic generation network need to meet the high power working requirements, which puts higher requirements on the devices of the harmonic generation network and directly increases the product cost.
功放架构中的功放分为两类:低功率和高功率状态下都工作的功放为主功放,仅高功率状态下才工作的功放为峰值功放;谐波注入到主功放有助于同时对功放输出端的低功率和高功率状态进行负载谐波调制;而谐波注入到峰值功放,仅仅高功率状态才对功放的输出端进行负载调制。某一种模式的选择,取决于负载调制过程中需要提升哪个功率区域的效率和需要提升哪个功放管的效率:比如当通过合理的电路设计,可以使是主功放在低功率状态和高功率都具有高效率,仅仅峰值功放在低频段有效率恶化,那么此时只需要对峰值功放进行谐波注入,便能有效的提升峰值功放的效率。The amplifiers in the amplifier architecture are divided into two categories: the main amplifiers work in both low-power and high-power states, and the peak amplifiers work only in high-power states; harmonic injection into the main amplifier helps to perform load harmonic modulation on the output of the amplifier at both low-power and high-power states; while harmonic injection into the peak amplifier only performs load modulation on the output of the amplifier at high-power states. The choice of a certain mode depends on which power area and which amplifier tube efficiency needs to be improved during the load modulation process: for example, through reasonable circuit design, the main amplifier can have high efficiency in both low-power and high-power states, and only the peak amplifier has deteriorated efficiency in the low-frequency band. At this time, only harmonic injection into the peak amplifier is needed to effectively improve the efficiency of the peak amplifier.
本实施例中的具体示例可以参考上述实施例及示例性实施方式中所描述的示例,本实施例在此不再赘述。For specific examples in this embodiment, reference may be made to the examples described in the above embodiments and exemplary implementation modes, and this embodiment will not be described in detail herein.
显然,本领域的技术人员应该明白,上述的本公开的各模块或各步骤可以用通用的计算装置来实现,它们可以集中在单个的计算装置上,或者分布在多个计算装置所组成的网络上,它们可以用计算装置可执行的程序代码来实现,从而,可以将它们存储在存储装置中由计算装置来执行,并且在某些情况下,可以以不同于此处的顺序执行所示出或描述的步骤,或者将它们分别制作成各个集成电路模块,或者将它们中的多个模块或步骤制作成单个集成电路模块来实现。这样,本公开不限制于任何特定的硬件和软件结合。Obviously, those skilled in the art should understand that the above modules or steps of the present disclosure can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present disclosure is not limited to any specific combination of hardware and software.
以上所述仅为本公开的优选实施例而已,并不设置为限制本公开,对于本领域的技术人员来说,本公开可以有各种更改和变化。凡在本公开的原则之内,所作的任何修改、等同替换、改进等,均应包含在本公开的保护范围之内。 The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims (10)

  1. 一种功率放大器,包括:耦合器和谐波产生网络,所述耦合器与所述谐波产生网络连接,其中,A power amplifier comprises: a coupler and a harmonic generation network, wherein the coupler is connected to the harmonic generation network, wherein:
    所述耦合器,设置为从所述功率放大器的输入信号中耦合出一部分输入信号,得到基波信号,并将所述基波信号输出至所述谐波产生网络;The coupler is configured to couple a portion of the input signal from the input signal of the power amplifier to obtain a fundamental wave signal, and output the fundamental wave signal to the harmonic generation network;
    所述谐波产生网络,设置为基于所述基波信号生成谐波分量,并将所述谐波分量输入到所述功率放大器的功放输入电路中。The harmonic generation network is configured to generate harmonic components based on the fundamental wave signal and input the harmonic components into a power amplifier input circuit of the power amplifier.
  2. 根据权利要求1所述的功率放大器,其中,所述功率放大器还包括:信号处理设备、多个射频通道以及第一电桥,其中,所述信号处理设备与所述多个射频通道连接,所述多个射频通道与所述第一电桥连接;所述多个射频通道中的至少一个射频通道上设置有一个所述谐波产生网络,所述耦合器与所述信号处理设备连接,每个射频通道上设置有一个所述功放输入电路;The power amplifier according to claim 1, wherein the power amplifier further comprises: a signal processing device, a plurality of RF channels and a first bridge, wherein the signal processing device is connected to the plurality of RF channels, and the plurality of RF channels are connected to the first bridge; at least one of the plurality of RF channels is provided with a harmonic generating network, the coupler is connected to the signal processing device, and each RF channel is provided with a power amplifier input circuit;
    所述信号处理设备,设置为将输入信号分成多路输入信号并输入到对应的射频通道,一路输入信号输入到一个射频通道上;The signal processing device is configured to divide the input signal into multiple input signals and input them into corresponding radio frequency channels, and one input signal is input into one radio frequency channel;
    所述第一电桥,设置为将所述多个射频通道的多路信号合成为输出信号。The first bridge is configured to synthesize the multi-path signals of the multiple radio frequency channels into an output signal.
  3. 根据权利要求2所述的功率放大器,其中,所述功放输入电路包括:功放管与电路匹配网络,其中,每个射频通道上均设置有相连的一个电路匹配网络与一个功放管,所述信号处理设备分别与多个所述电路匹配网络连接,多个所述功放管均与所述第一电桥连接,其中,The power amplifier according to claim 2, wherein the power amplifier input circuit comprises: a power amplifier tube and a circuit matching network, wherein each RF channel is provided with a connected circuit matching network and a power amplifier tube, the signal processing device is respectively connected to a plurality of the circuit matching networks, and a plurality of the power amplifier tubes are connected to the first bridge, wherein,
    每个所述电路匹配网络,设置为匹配所述信号处理设备与所述功放管的输入;Each of the circuit matching networks is configured to match the input of the signal processing device with the input of the power amplifier tube;
    每个所述功放管,设置为对所在射频通道上的输入信号进行放大处理。Each of the power amplifier tubes is configured to amplify the input signal on the radio frequency channel.
  4. 根据权利要求3所述的功率放大器,其中,The power amplifier according to claim 3, wherein:
    所述电路匹配网络,设置为将所述输入信号与所述谐波产生网络产生的谐波信号合并输出到所述功放管的输入端;或者将所述输入信号输出到所述功放管的输入端。The circuit matching network is configured to combine the input signal with the harmonic signal generated by the harmonic generation network and output the combined signals to the input end of the power amplifier tube; or to output the input signal to the input end of the power amplifier tube.
  5. 根据权利要求3所述的功率放大器,其中,多个所述功放管包括一个或多个主功放管、一个或多个峰值功放管,所述谐波产生网络设置于所述一个或多个主功放管所在射频通道上;或者,所述谐波产生网络设置于所述一个或多个峰值功放管所在射频通道上。The power amplifier according to claim 3, wherein the plurality of power amplifier tubes include one or more main power amplifier tubes and one or more peak power amplifier tubes, and the harmonic generating network is arranged on the radio frequency channel where the one or more main power amplifier tubes are located; or, the harmonic generating network is arranged on the radio frequency channel where the one or more peak power amplifier tubes are located.
  6. 根据权利要求2所述的功率放大器,其中,所述耦合器的一端与所述信号处理设备的输出端连接,其余端口分别与所述谐波产生网络和所述电路匹配网络连接。The power amplifier according to claim 2, wherein one end of the coupler is connected to the output end of the signal processing device, and the remaining ports are respectively connected to the harmonic generating network and the circuit matching network.
  7. 根据权利要求2所述的功率放大器,其中,所述耦合器的一端与所述信号处理设备的输入端连接,其余端口分别与所述谐波产生网络和所述电路匹配网络连接。The power amplifier according to claim 2, wherein one end of the coupler is connected to the input end of the signal processing device, and the remaining ports are respectively connected to the harmonic generating network and the circuit matching network.
  8. 根据权利要求6或7所述的功率放大器,其中,The power amplifier according to claim 6 or 7, wherein:
    所述耦合器包括:输入端,直通端,耦合端,其中,所述基波信号从所述输入端耦合进入到所述耦合端,且从所述输入端到所述直通端全频段直通,得到所述基波信号。The coupler comprises: an input end, a through end, and a coupling end, wherein the fundamental wave signal is coupled from the input end to the coupling end, and is directly passed from the input end to the through end in the full frequency band to obtain the fundamental wave signal.
  9. 根据权利要求2所述的功率放大器,其中,所述谐波产生网络包括依次连接的非线性电路、带通滤波器、移相器及谐波增益放大器,所述谐波增益放大器与所述电路匹配网络连接,其中,The power amplifier according to claim 2, wherein the harmonic generation network comprises a nonlinear circuit, a bandpass filter, a phase shifter and a harmonic gain amplifier connected in sequence, and the harmonic gain amplifier is connected to the circuit matching network, wherein:
    所述非线性电路,设置为对所述基波信号进行非线性处理,产生多个谐波分量;The nonlinear circuit is configured to perform nonlinear processing on the fundamental wave signal to generate a plurality of harmonic components;
    所述带通滤波器,设置为从所述多个谐波分量选择目标谐波分量; The bandpass filter is configured to select a target harmonic component from the plurality of harmonic components;
    所述移相器,设置为调整所述目标谐波分量的相位,得到谐波信号;The phase shifter is configured to adjust the phase of the target harmonic component to obtain a harmonic signal;
    所述谐波增益放大器,设置为将所述谐波信号放大后输入到所述功放管的输入端。The harmonic gain amplifier is configured to amplify the harmonic signal and then input it into the input end of the power amplifier tube.
  10. 根据权利要求2至6、8至9中任一项所述的功率放大器,所述信号处理设备为功分器或第二电桥。 According to the power amplifier according to any one of claims 2 to 6 and 8 to 9, the signal processing device is a power divider or a second bridge.
PCT/CN2023/118933 2022-09-29 2023-09-14 Power amplifier WO2024067147A1 (en)

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CN103475315A (en) * 2013-09-12 2013-12-25 电子科技大学 Method and device for improving linearity of radio frequency power amplifier
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