WO2024060332A1

WO2024060332A1 - Circuit structure and method for forming same, and memory

Info

Publication number: WO2024060332A1
Application number: PCT/CN2022/124448
Authority: WO
Inventors: 方亚德; 王彦武
Original assignee: 长鑫存储技术有限公司
Priority date: 2022-09-22
Filing date: 2022-10-10
Publication date: 2024-03-28
Also published as: CN117787197A

Abstract

A circuit structure and a method for forming same, and a memory. The circuit structure comprises a first layer-changing assembly (1), a second layer-changing assembly (2), and a coupling pad (3). The first layer-changing assembly (1) comprises a first layer-changing portion, a first pad (12), and a second pad (13), the first layer-changing portion comprises a first layer-changing via, and the first pad (12) and the second pad (13) are respectively connected to two ends of the first layer-changing via. The second layer-changing assembly (2) comprises a second layer-changing portion, a third pad (22), and a fourth pad (23), the second layer-changing portion comprises a second layer-changing via, the third pad (22) and the fourth pad (23) are respectively connected to two ends of the second layer-changing via, and the second layer-changing via is parallel to the first layer-changing via. The coupling pad (3) comprises a first coupling pad (31), the first coupling pad (31) comprises a first inner via (311) and a second inner via (312), the first inner via (311) is communicated with the second inner via (312) by means of a first connecting channel (313), the second layer-changing via penetrates through the first inner via (311), and the first layer-changing via penetrates through the second inner via (312). The circuit structure can reduce far-end crosstalk and reduce the possibility of signal distortion.

Description

Circuit structure and formation method thereof, memory

cross reference

This disclosure claims priority to the Chinese patent application with application number 202211160986. Enter this article.

Technical field

The present disclosure relates to the field of semiconductor technology, and specifically, to a circuit structure and a method of forming the same, and a memory.

Background technique

With the development of semiconductor technology, the application range of circuit structures is becoming more and more extensive. Multi-layer PCB (Printed Circuit Board) is the core of the circuit structure. It usually adopts the design of layer-changing holes to ensure high-speed signals of different loads. transmission. However, as the volume of semiconductor devices continues to shrink, there are more and more layer-changing holes per unit area, making the spacing between layer-changing holes smaller. Under high-frequency conditions, the crosstalk between layer-changing holes is increasing, which can easily lead to Signal distortion.

It should be noted that the information disclosed in the above background section is only used to enhance understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to those of ordinary skill in the art.

Contents of the invention

In view of this, the present disclosure provides a circuit structure, a method of forming the same, and a memory, which can reduce far-end crosstalk and reduce the possibility of signal distortion.

According to an aspect of the present disclosure, a circuit structure is provided, including:

A first layer-changing component, including a first layer-changing part, a first bonding pad, and a second bonding pad. The first layer-changing part includes a first layer-changing hole. The first bonding pad and the second bonding pad Connected to both ends of the first layer-changing hole respectively;

The second layer changing component includes a second layer changing part, a third bonding pad and a fourth bonding pad. The second layer changing part includes a second layer changing hole. The third bonding pad and the fourth bonding pad Connected to both ends of the second layer-changing hole, the second layer-changing hole is parallel to the first layer-changing hole;

The coupling pad includes a first coupling pad, the first coupling pad includes a first inner hole and a second inner hole, the first inner hole and the second inner hole are connected through a first connection channel, so The second layer-changing hole penetrates the first inner hole, and the first layer-changing hole penetrates the second inner hole.

In an exemplary embodiment of the present disclosure, the first inner hole and the second layer change hole are coaxially distributed, and the hole wall of the first inner hole and the outer periphery of the second layer change hole are The spacing is less than or equal to the aperture of the second layer-changing hole; the second inner hole is in contact with the outer periphery of the first layer-changing hole.

In an exemplary embodiment of the present disclosure, the width of the first connecting channel is greater than 0 and less than or equal to twice the aperture of the second layer-changing hole.

In an exemplary embodiment of the present disclosure, on the extension line of the connecting line between the center point of the first inner hole and the center point of the second inner hole, the first coupling pad is close to the The distance between the end of the first inner hole and the hole wall of the first inner hole is 0.5 to 1.5 times the hole diameter of the second layer-changing hole.

In an exemplary embodiment of the present disclosure, the coupling pad further includes a second coupling pad, the second coupling pad includes a third inner hole and a fourth inner hole, the third inner hole is connected to The fourth inner hole is connected through a second connecting channel, the first layer-changing hole penetrates the third inner hole, and the second layer-changing hole penetrates the fourth inner hole.

In an exemplary embodiment of the present disclosure, the third inner hole is coaxially distributed with the first layer-changing hole, and the distance between the hole wall of the third inner hole and the outer periphery of the first layer-changing hole is less than or equal to the aperture of the first layer-changing hole; the fourth inner hole contacts the outer periphery of the second layer-changing hole.

In an exemplary embodiment of the present disclosure, the width of the second connection channel is greater than 0 and less than or equal to 2 times the aperture of the first layer-changing hole.

In an exemplary embodiment of the present disclosure, on an extension line of a connecting line between the center point of the third inner hole and the center point of the fourth inner hole, the second coupling pad is close to the The distance between the end of the third inner hole and the hole wall of the third inner hole is 0.5 to 1.5 times the hole diameter of the first layer-changing hole.

In an exemplary embodiment of the present disclosure, the circuit structure further includes:

A first signal input terminal, connected to the first pad, used to input a first data signal to the first layer-changing hole through the first pad;

A first signal output terminal is connected to the second pad and used to output the first data signal in the first layer-changing hole;

a second signal input terminal connected to the third pad for inputting a second data signal to the second layer-changing hole through the third pad;

A second signal output terminal is connected to the fourth pad and used to output the second data signal in the second layer change hole.

According to an aspect of the present disclosure, a method for forming a circuit structure is provided, including:

A first layer change component is formed, the first layer change component includes a first layer change part, a first bonding pad and a second bonding pad, the first layer change part includes a first layer change hole, the first bonding pad The pad and the second pad are respectively connected to both ends of the first layer change hole;

A second layer change component is formed, the second layer change component includes a second layer change part, a third bonding pad and a fourth bonding pad, the second layer change part includes a second layer change hole, and the third bonding pad The pad and the fourth pad are respectively connected to both ends of the second layer change hole, and the second layer change hole is parallel to the first layer change hole;

A coupling pad is formed, the coupling pad includes a first coupling pad, the first coupling pad includes a first inner hole and a second inner hole, and the first inner hole and the second inner hole pass through a third inner hole. A connecting channel is connected, the second layer-changing hole penetrates the first inner hole, and the first layer-changing hole penetrates the second inner hole.

In an exemplary embodiment of the present disclosure, the width of the first connection channel is greater than 0 and less than or equal to 2 times the aperture of the second layer-changing hole.

In an exemplary embodiment of the present disclosure, the third inner hole and the first layer change hole are coaxially distributed, and the hole wall of the third inner hole is in contact with the outer periphery of the first layer change hole. The spacing is less than or equal to the aperture of the first layer-changing hole; the fourth inner hole is in contact with the outer periphery of the second layer-changing hole.

In an exemplary embodiment of the present disclosure, the forming method further includes:

Forming a first signal input terminal, the first signal input terminal is connected to the first pad for inputting a first data signal to the first layer-changing hole through the first pad;

Forming a first signal output terminal, the first signal output terminal is connected to the second pad for outputting the first data signal in the first layer change hole;

Forming a second signal input terminal, the second signal input terminal is connected to the third pad for inputting a second data signal to the second layer-changing hole through the third pad;

A second signal output terminal is formed, and the second signal output terminal is connected to the fourth pad for outputting the second data signal in the second layer change hole.

According to one aspect of the present disclosure, a memory is provided, including the circuit structure described in any one of the above.

In the circuit structure, formation method and memory of the present disclosure, a part of the data signal can enter the first layer change hole from the first bonding pad and then flow out from the second bonding pad; at the same time, another part of the data signal can enter the second layer change hole from the third bonding pad. The layer hole then flows out from the fourth pad to achieve signal transmission with different loads. The first inner hole of the coupling pad is sleeved on the outer periphery of the first layer change hole, and the second inner hole is sleeved on the outer periphery of the second layer change hole. At least one of the first layer change hole and the second layer change hole has a When data signals circulate, the mutual capacitance between the first switching component and the second switching component can be increased through two coupling pads (i.e., the first coupling pad and the second coupling pad), thereby offsetting the first switching component. The inductive crosstalk between the data signals in the layer hole and the second layer hole is reduced, thereby reducing the far-end crosstalk between the first layer hole and the second layer hole, which can reduce the possibility of signal distortion; at the same time, due to The coupling pad is nested between the first layer-changing component and the second layer-changing component. There is no need to reserve a special space for the coupling pad, which is helpful for miniaturization design of the circuit structure.

It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only, and do not limit the present disclosure.

Description of the drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without exerting creative efforts.

Figure 1 is a schematic diagram of a circuit structure in related technology;

Figure 2 is a front view of the circuit structure in the embodiment of the present disclosure;

Figure 3 is a side view of the circuit structure in an embodiment of the present disclosure;

Figure 4 is a schematic diagram of a first layer changing component and a second layer changing component in an embodiment of the present disclosure;

Figure 5 is a schematic diagram of the first coupling pad in an embodiment of the present disclosure;

Figure 6 is a top view of the first coupling pad in an embodiment of the present disclosure;

Figure 7 is a schematic diagram of the second coupling pad in an embodiment of the present disclosure;

Figure 8 is a top view of the second coupling pad in an embodiment of the present disclosure;

Figure 9 is a diagram of the far-end crosstalk formed between the first layer change hole and the second layer change hole before and after the coupling pad is introduced in the embodiment of the present disclosure;

Figure 10 is a graph of the impedance between each signal input end and each signal output end and each layer change hole before and after the coupling pad is introduced in the embodiment of the present disclosure;

Figure 11 is a diagram of the far-end crosstalk formed between the first layer-changing component and the second layer-changing component before and after the coupling pad is introduced in the embodiment of the present disclosure;

FIG. 12 is a schematic diagram of a method of forming a circuit structure in an embodiment of the present disclosure.

Explanation of reference symbols:

100. Layer changing hole; 200. Reflow via hole; 1. First layer changing component; 11. First connection hole; 12. First soldering pad; 13. Second soldering pad; 2. Second layer changing component; 21 , the second connection hole; 22. the third pad; 23. the fourth pad; 3. the coupling pad; 31. the first coupling pad; 311. the first inner hole; 312. the second inner hole; 313. The first connection channel; 32. The second coupling pad; 321. The third inner hole; 322. The fourth inner hole; 323. The second connection channel; 4. The first signal input terminal; 5. The first signal output terminal; 6. The second signal input terminal; 7. The second signal output terminal.

Detailed ways

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments. To those skilled in the art. The same reference numerals in the drawings indicate the same or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

Although relative terms, such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of an icon to another component, these terms are used in this specification only for convenience. For example, according to the drawings, direction of the example described. It will be understood that if the icon device were turned upside down, components described as "on top" would become components as "on bottom". When a structure is "on" another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" placed on the other structure, or that the structure is "indirectly" placed on the other structure through another structure. on other structures.

The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements/components/etc.; the terms "include" and "have" are used to indicate an open-ended has an inclusive meaning and means that there may be additional elements/components/etc. in addition to the listed elements/components/etc.; the terms "first", "second", "third" and " Fourth" and so on are only used as markers, not as a limit on the number of objects.

Multilayer PCB (Printed Circuit Board) is one of the important structures in integrated circuits. As shown in Figure 1, the design of layer-changing holes 100 is usually used to ensure high-speed signal transmission of different loads in the circuit. For example, multiple parallel-distributed layer-changing holes 100 are provided in the circuit structure, and signal transmission of different loads is achieved through the arrangement of different layer-changing holes 100 . However, the far-end crosstalk between the subsequent layer holes 100 will be superimposed as the coupling length increases.

In the related art, crosstalk is often reduced by adding reflow vias 200 between adjacent layer-changing holes 100. However, as the size of the circuit structure continues to shrink, the number of layer-changing holes 100 per unit area is increasing. As a result, the distance between adjacent layer-changing holes 100 becomes smaller, and there is no more space to accommodate the return vias 200. This further causes the far-end crosstalk caused by the coupling length between the layer-changing holes 100 under high-frequency conditions to become increasingly serious. The more serious it is.

Based on this, the embodiment of the present disclosure provides a circuit structure. FIG. 2 shows a front view of the circuit structure in the embodiment of the present disclosure. FIG. 3 shows a side view of the circuit structure in the embodiment of the present disclosure. See FIG. 2 and Figure 3, the circuit structure includes a first layer changing component 1, a second layer changing component 2 and a coupling pad 3, where:

The first layer changing component 1 may include a first layer changing part, a first bonding pad 12 and a second bonding pad 13. The first layer changing part includes a first layer changing hole. The first bonding pad 12 and the second bonding pad 13 are respectively Connected to both ends of the first layer-changing hole;

The second layer changing component 2 may include a second layer changing part, a third bonding pad 22 and a fourth bonding pad 23. The second layer changing part includes a second layer changing hole. The third bonding pad 22 and the fourth bonding pad 23 are respectively Connected to both ends of the second layer-changing hole, the second layer-changing hole is parallel to the first layer-changing hole;

The coupling pad 3 may include a first coupling pad 31 , the first coupling pad 31 includes a first inner hole 311 and a second inner hole 312 , and the first inner hole 311 and the second inner hole 312 are connected through a first connection channel 313 , the second layer-changing hole penetrates the first inner hole 311, and the first layer-changing hole penetrates the second inner hole 312.

In the circuit structure of the present disclosure, part of the data signal can enter the first layer change hole from the first bonding pad 12, and then flow out from the second bonding pad 13; at the same time, another part of the data signal can enter the second layer change hole from the third bonding pad 22, Then it flows out from the fourth pad 23, thereby realizing signal transmission of different loads. The first inner hole 311 of the first coupling pad 31 is sleeved on the outer periphery of the first layer change hole (not shown in the figure), and the second inner hole 312 is sleeved on the second layer change hole (not shown in the figure). on the outer periphery of The mutual capacitance between the first layer change component 1 and the second layer change component 2 can offset the inductive crosstalk between the data signals in the first layer change hole and the second layer change hole, thereby reducing the first layer change hole and the second layer change hole. Far-end crosstalk between the second layer-changing holes can reduce the possibility of signal distortion; at the same time, because the coupling pad 3 is set between the first layer-changing component 1 and the second layer-changing component 2, there is no need to specifically couple The pad 3 is provided with an accommodation space, which is helpful for the miniaturization design of the circuit structure.

As shown in FIG. 4 , the first layer changing component 1 may include a first layer changing part (not shown in the figure), a first bonding pad 12 and a second bonding pad 13 . The first layer changing part may include a first layer changing part. hole, the first pad 12 and the second pad 13 may be connected to both ends of the first layer-changing hole respectively. For example, the first layer-changing hole may include a plurality of first connection holes 11 arranged in a stack. Each first connection hole 11 may be provided with a first pad 12 and a second pad 13 at both ends and are adjacent to each other. The two first connection holes 11 may share one pad. For example, the second pad 13 of the upper first connection hole 11 among the two adjacent first connection holes 11 may serve as the lower first connection hole 11 . 11 of the first pad 12.

In an exemplary embodiment of the present disclosure, the first pad 12 and/or the second pad 13 may be connected to the controller or connector through a microstrip line, a transmission line, or a wire. The wire transmits the signal output by the controller or the connector to the first layer-changing hole, and then transmits it to the load through the first layer-changing hole. In this process, the first layer-changing hole can be used as a printed wire connecting various layers for transmitting signals. For example, the circuit structure may be a multi-layer PCB (Printed Circuit Board). During the signal transmission process, the signal enters the first connection hole 11 through the microstrip line, transmission line or wire connected to the first pad 12 of the first connection hole 11 on the top layer, and then enters the first connection hole 11 through the first connection hole 11 on the top layer. In the first connection hole 11 of the lower layer, that is, the signal can enter the first layer change hole through the first pad 12 located at one end of the first layer change hole, and then through the third layer change hole located at the other end of the first layer change hole. The second pad 13 outputs, and the signal transmission direction in the first layer-changing component 1 can be seen as shown by the arrow in Figure 4 .

In some embodiments of the present disclosure, the first layer-changing part may be in the shape of a rod, and both ends of the rod-shaped first layer-changing part may be penetrated, thereby forming one or more first connection holes 11 inside. The wall of the hole 11 may be made of a conductive material, which may be metal, for example. The cross section of the first connecting hole 11 may be circular, elliptical, rectangular or irregular, and is not specifically limited here. The first bonding pad 12 and the second bonding pad 13 can be connected to both ends of the first connection hole 11 respectively, and the first bonding pad 12 and the second bonding pad 13 can both be made of conductive material. For example, the material can be For metal. Both the first bonding pad 12 and the second bonding pad 13 may be circular disks, elliptical disks, rectangular disks or other shaped pads, which are not listed here.

Continuing to refer to FIG. 4, the second layer-changing component 2 may include a second layer-changing portion (not shown in the figure), a third pad 22 and a fourth pad 23, the second layer-changing portion may include a second layer-changing hole, and the third pad 22 and the fourth pad 23 may be connected to both ends of the second layer-changing hole, respectively. For example, the second layer-changing hole may include a plurality of second connection holes 21 stacked and arranged, and both ends of each second connection hole 21 may be provided with a third pad 22 and a fourth pad 23, and two adjacent second connection holes 21 may share one pad, for example, the fourth pad 23 of the second connection hole 21 located at the upper part of the two adjacent second connection holes 21 may serve as the third pad 22 of the second connection hole 21 located at the lower part.

In an exemplary embodiment of the present disclosure, the third pad 22 and/or the fourth pad 23 may be connected to the controller or connector through a microstrip line, a transmission line, or a wire. The wire transmits the signal output by the controller or the connector to the second layer-changing hole, and then transmits it to the load through the second layer-changing hole. In this process, the second layer-changing hole can be used as a printed wire connecting various layers for transmitting signals. For example, the circuit structure may be a multi-layer PCB (Printed Circuit Board). During the signal transmission process, the signal enters the second connection hole 21 through the microstrip line, transmission line or wire connected to the third pad 22 of the second connection hole 21 on the top layer, and then enters the second connection hole 21 through the second connection hole 21 on the top layer. In the second connection hole 21 of the lower layer, that is, the signal can enter the second layer change hole through the third pad 22 located at one end of the second layer change hole, and then through the third pad 22 located at the other end of the second layer change hole. The four pads 23 output, and the direction of signal transmission in the second layer changing component 2 can be seen as shown by the arrow in Figure 4 .

In some embodiments of the present disclosure, the second layer-changing part may be in the shape of a rod, and both ends of the rod-shaped second layer-changing part may be penetrated, thereby forming one or more second connection holes 21 inside. The wall of the hole 21 may be made of a conductive material, which may be metal, for example. The cross section of the second connecting hole 21 may be circular, elliptical, rectangular or irregular, and is not specifically limited here. The third soldering pad 22 and the fourth soldering pad 23 can be connected to both ends of the second connection hole 21 respectively, and the third soldering pad 22 and the fourth soldering pad 23 can both be made of conductive material. For example, the material can be For metal. Both the third bonding pad 22 and the fourth bonding pad 23 may be circular disks, elliptical disks, rectangular disks or other shaped pads, which are not listed here.

In some embodiments of the present disclosure, the second layer-changing holes can be distributed in parallel with the first layer-changing holes. It should be noted that the parallelism can be absolutely parallel or approximately parallel. There will inevitably be deviations during the manufacturing process. In the present disclosure, the angle deviation may be caused by the limitation of the manufacturing process, so that the angle between the extension direction of the first layer change hole and the extension direction of the second layer change hole has a certain deviation. As long as the extension direction of the first layer change hole If the angle deviation from the extension direction of the second layer-changing hole is within a preset range, the second layer-changing hole can be considered to be parallel to the first layer-changing hole. For example, the preset range may be 10°, that is, when the angle between the extension direction of the second layer change hole and the extension direction of the first layer change hole is less than or equal to 10°, the second layer change hole can be considered as the second layer change hole. The layer holes are distributed parallel to the first layer-changing holes.

It should be noted that the far-end crosstalk in the circuit structure can be calculated by the following formula:

Among them, FEXT is the value of far-end crosstalk; V _α is the signal line input voltage, V _f is the static line far-end voltage, k _f is the far-end coupling coefficient related only to intrinsic parameters, RT is the signal rise time, and Len is The coupling length between two signals, v is the signal propagation speed on the line, C _ml is the mutual capacitance per unit length, C _l is the capacitance per unit length on the signal path, L _ml is the mutual inductance per unit length, and L _l is the inductance per unit length on the signal path. .

It can be seen from the above formula that the far-end crosstalk in the circuit structure is mainly caused by the inductive crosstalk between signals (the optimization space for inductive crosstalk is limited). The inductive crosstalk can be offset by introducing capacitive crosstalk in the circuit structure, thereby reducing the far-end crosstalk. crosstalk; and when

When , the far-end crosstalk is 0.

Based on this, the coupling pad 3 can be introduced into the circuit structure to achieve the purpose of introducing capacitive crosstalk. Continuing to refer to Figures 2 and 3, the coupling pad 3 can be placed between the first layer changing component 1 and the second layer changing component 2. For example, the coupling pad 3 can be in the shape of a sheet or a plate. It can be sleeved on the outer circumference of the first layer change hole of the first layer change component 1 and the second layer change hole of the second layer change component 2 at the same time. The material of the coupling pad 3 can be a conductive material. When at least one of the layer hole and the second layer changing hole has a data signal flowing, the coupling pad 3 can generate capacitive coupling with the first layer changing part and the second layer changing part, thereby generating capacitive crosstalk. When at least one of the first layer-changing hole and the second layer-changing hole has a data signal flowing through it, the mutual capacitance between the first layer-changing component 1 and the second layer-changing component 2 can be increased through the coupling pad 3 to offset the second layer-changing component. The inductive crosstalk between the data signals in the first layer-changing hole and the second layer-changing hole reduces the far-end crosstalk between the first layer-changing hole and the second layer-changing hole, which can reduce the possibility of signal distortion; at the same time , since the coupling pad 3 is nested between the first layer-changing component 1 and the second layer-changing component 2, there is no need to leave a special accommodation space for the coupling pad 3, which is helpful for the miniaturization design of the circuit structure.

In an exemplary embodiment of the present disclosure, the coupling pad 3 may include at least one coupling pad, and the coupling pad may be sleeved on the outer periphery of the first layer-changing hole and the second layer-changing hole of the first layer-changing component 1 at the same time. The outer periphery of the second layer change hole of layer assembly 2.

In some embodiments of the present disclosure, the coupling pad 3 may include a coupling pad that can be sleeved on the outer periphery of any one of the first connection holes 11 in the first layer-changing holes. At the same time, Set on the outer periphery of any second connection hole 21 in the second layer-changing hole; of course, the coupling pad 3 can also include multiple coupling pads, and each coupling pad can be distributed in parallel, and each coupling pad Both can be sleeved on the outer periphery of the first layer change hole and the second layer change hole at the same time. For example, in some embodiments of the present disclosure, multiple coupling pads can be sleeved on the outer periphery of the same first connection hole 11 at the same time, and at the same time, multiple coupling pads can be sleeved on the same second connection hole 21 at the same time. the outer circumference of The outer periphery of 11 can be provided with at least one coupling pad, and the number of coupling pads is not specifically limited here.

There can be a gap between the inner hole of the coupling pad and the layer-changing hole, and the dielectric material can be filled in the gap. The dielectric material can have a lower dielectric constant, which can reduce the capacitive load, thereby increasing the layer-changing hole impedance and reducing the Small transmission delay.

In an exemplary embodiment of the present disclosure, as shown in FIG. 5 , the coupling pad 3 may include a first coupling pad 31 , and the first coupling pad 31 may include spaced-apart first inner holes 311 and second second inner holes 311 . The inner hole 312 , wherein the first inner hole 311 can penetrate the first coupling pad 31 in the thickness direction of the first coupling pad 31 . The first inner hole 311 can be sleeved on the outer periphery of the second layer-changing hole, the second inner hole 312 can be sleeved on the outer periphery of the first layer-changing hole, and the first inner hole 311 and the second inner hole 312 can pass through the first The connecting channels 313 are connected, that is, the second layer-changing hole can penetrate the first inner hole 311 , and the first layer-changing hole can penetrate the second inner hole 312 .

In some embodiments of the present disclosure, the first inner hole 311 may be a circular hole, an elliptical hole, a rectangular hole or an irregular-shaped hole structure. Of course, the first inner hole 311 may also be a hole structure of other shapes. I won’t list them all here.

In an exemplary embodiment of the present disclosure, as shown in FIG. 6 , the first inner hole 311 and the second layer-changing hole may be coaxially distributed, and the diameter of the first inner hole 311 may be larger than that of the second layer-changing hole. The hole diameter is such that the second layer-changing hole penetrates the first inner hole 311. For example, the pore diameter of the first inner hole 311 can be larger than the pore diameter of the second layer-changing hole, and at the same time less than or equal to 2 times the pore diameter of the second layer-changing hole. That is, the hole wall of the first inner hole 311 is in contact with the second layer-changing hole. The distance between the outer periphery of the layer holes may be less than or equal to the hole diameter of the second layer-changing hole. For example, the first inner hole 311 and the second connecting hole 21 of the second layer-changing hole can be coaxially distributed, and the diameter of the first inner hole 311 can be larger than the diameter of the second connecting hole 21 to facilitate the penetration of the second connecting hole 21 The first inner hole 311.

For example, the aperture of the first inner hole 311 may be 1.2 times, 1.4 times, 1.6 times, 1.8 times or 2 times the aperture of the second connecting hole 21. Of course, the aperture of the first inner hole 311 may also be other multiples of the aperture of the second connecting hole 21, which are not listed here one by one.

In some embodiments of the present disclosure, the second inner hole 312 may penetrate the first coupling pad 31 in the thickness direction of the first coupling pad 31 . The second inner hole 312 may be a circular hole, an elliptical hole, a rectangular hole or an irregular-shaped hole structure. Of course, the second inner hole 312 may also be a hole structure of other shapes, which will not be listed here. The shape of the second inner hole 312 may be the same as the shape of the first inner hole 311, or may be different from the shape of the first inner hole 311, and is not specifically limited here.

The pore diameter of the second inner hole 312 may be greater than or equal to the pore diameter of the first layer-changing hole. In some embodiments, the pore diameter of the second inner hole 312 may be slightly larger than the pore diameter of the first layer-changing hole, so that the second inner hole 312 Contact and connected with the outer periphery of the first layer change hole. For example, the second inner hole 312 and the first connection hole 11 of the first layer-changing hole can be coaxially distributed, and the diameter of the second inner hole 312 can be larger than the diameter of the first connection hole 11 to facilitate the penetration of the first connection hole 11 Second inner hole 312.

Continuing to refer to FIG. 5 and FIG. 6 , the first connecting channel 313 can be connected between the first inner hole 311 and the second inner hole 312 . The first connecting channel 313 can be in a strip shape, and can be connected through the first connecting channel 313 . The first inner hole 311 and the second inner hole 312 are connected, and the first connection channel 313 can penetrate the first coupling pad 31 in the thickness direction of the first coupling pad 31 .

In an exemplary embodiment of the present disclosure, in a direction perpendicular to the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the width of the first connection channel 313 may be greater than 0, And less than or equal to 2 times the hole diameter of the second layer-changing hole. For example, in the direction perpendicular to the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the width of the first connection channel 313 may be greater than 0 and less than or equal to the width of the second layer-changing hole. 2 times the hole diameter of the second connection hole 21 .

For example, in the direction perpendicular to the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312 , the width of the first connection channel 313 may be 0.4 times the diameter of the second connection hole 21 , 0.8 times, 1.2 times, 1.6 times or 2 times. Of course, in the direction perpendicular to the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the width of the first connecting channel 313 can be are other multiples of the hole diameter of the second connection hole 21, which are not listed here.

In an exemplary embodiment of the present disclosure, on the extension line of the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the first coupling pad 31 is close to the first inner hole. The distance between the end of 311 and the hole wall of the first inner hole 311 may be 0.5 to 1.5 times the hole diameter of the second layer-changing hole.

For example, on the extension line of the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the distance between the end of the first coupling pad 31 close to the first inner hole 311 and the hole wall of the first inner hole 311 may be 0.5 times, 0.8 times, 1.1 times, 1.4 times or 1.5 times the aperture of the second connecting hole 21 of the second layer exchange hole. Of course, on the extension line of the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the distance between the end of the first coupling pad 31 close to the first inner hole 311 and the hole wall of the first inner hole 311 may be other multiples of the aperture of the second connecting hole 21, which are not listed one by one here.

It should be noted that in the first coupling pad, on the extension line of the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the first coupling pad 31 is close to the first inner hole. The smaller the distance between the end of the hole 311 and the hole wall of the first inner hole 311, the greater the capacitive crosstalk, the smaller the far-end crosstalk, and the smaller the impedance of the layer-changing hole; The smaller the distance between the outer circumferences of the layer-changing holes, the greater the capacitive crosstalk, the smaller the far-end crosstalk, and the smaller the impedance of the layer-changing holes; the larger the width of the first connection channel 313, the greater the capacitive crosstalk, and the greater the far-end crosstalk. Small, the smaller the impedance of the layer-changing hole. According to the above rules, adjustments can be made within the range of the above values to reduce far-end crosstalk as much as possible.

In an exemplary embodiment of the present disclosure, as shown in FIG. 7 , the coupling pad 3 may further include a second coupling pad 32 , and the second coupling pad 32 may include third inner holes 321 and third inner holes 321 distributed at intervals. Four inner holes 322 , wherein the third inner hole 321 can penetrate the second coupling pad 32 in the thickness direction of the second coupling pad 32 . The third inner hole 321 can be sleeved on the outer periphery of the first layer changing hole, the fourth inner hole 322 can be sleeved on the outer periphery of the second layer changing hole, and the third inner hole 321 and the fourth inner hole 322 can pass through the second layer changing hole. The connecting channels 323 are connected, that is, the first layer-changing hole can penetrate the third inner hole 321 and the second layer-changing hole can penetrate the fourth inner hole 322.

In some embodiments of the present disclosure, the third inner hole 321 can be a circular hole, an elliptical hole, a rectangular hole or an irregular-shaped hole structure. Of course, the third inner hole 321 can also be a hole structure of other shapes. I won’t list them all here.

In an exemplary embodiment of the present disclosure, as shown in FIG. 8 , the third inner hole 321 and the first layer-changing hole may be coaxially distributed, and the diameter of the third inner hole 321 may be larger than that of the first layer-changing hole. The hole diameter is such that the first layer-changing hole penetrates the third inner hole 321 . For example, the pore diameter of the third inner hole 321 can be larger than the pore diameter of the first layer-changing hole, and at the same time less than or equal to 2 times the pore diameter of the first layer-changing hole. That is, the hole wall of the third inner hole 321 is in contact with the first layer-changing hole. The distance between the outer periphery of the layer holes may be less than or equal to the hole diameter of the first layer-changing hole. For example, the third inner hole 321 and the first connection hole 11 of the first layer-changing hole can be coaxially distributed, and the diameter of the third inner hole 321 can be larger than the diameter of the first connection hole 11 to facilitate the penetration of the first connection hole 11 The third inner hole 321.

For example, the diameter of the third inner hole 321 may be 1.2 times, 1.4 times, 1.6 times, 1.8 times or 2 times the diameter of the first connection hole 11 . Of course, the diameter of the third inner hole 321 may also be the diameter of the first connection hole 11 . Other multiples of the diameter of the connecting hole 11 are not listed here.

In some embodiments of the present disclosure, the fourth inner hole 322 may penetrate the second coupling pad 32 in the thickness direction of the second coupling pad 32 . The fourth inner hole 322 can be a circular hole, an elliptical hole, a rectangular hole or an irregular-shaped hole structure. Of course, the fourth inner hole 322 can also be a hole structure of other shapes, which will not be listed here. The shape of the fourth inner hole 322 may be the same as the shape of the third inner hole 321, or may be different from the shape of the third inner hole 321, and is not specifically limited here.

The aperture of the fourth inner hole 322 may be greater than or equal to the aperture of the second layer-changing hole. In some embodiments, the aperture of the fourth inner hole 322 may be slightly greater than the aperture of the second layer-changing hole, so that the fourth inner hole 322 is in contact with the outer periphery of the second layer-changing hole. For example, the fourth inner hole 322 and the second connecting hole 21 of the second layer-changing hole may be coaxially distributed, and the aperture of the fourth inner hole 322 may be greater than the aperture of the second connecting hole 21, so that the second connecting hole 21 passes through the fourth inner hole 322.

Continuing to refer to Figures 7 and 8, the second connection channel 323 can be connected between the third inner hole 321 and the fourth inner hole 322. The second connection channel 323 can be in a strip shape, and can be connected through the second connection channel 323. The third inner hole 321 and the fourth inner hole 322 are connected, and the second connection channel 323 can penetrate the second coupling pad 32 in the thickness direction of the second coupling pad 32 .

In an exemplary embodiment of the present disclosure, in a direction perpendicular to the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322, the width of the second connection channel 323 may be greater than 0, And less than or equal to 2 times the diameter of the first layer-changing hole. For example, in the direction perpendicular to the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322, the width of the second connection channel 323 may be greater than 0 and less than or equal to the width of the first layer-changing hole. 2 times the hole diameter of the first connection hole 11 .

For example, in a direction perpendicular to the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322 , the width of the second connection channel 323 may be 0.4 times the diameter of the first connection hole 11 , 0.8 times, 1.2 times, 1.6 times or 2 times. Of course, in the direction perpendicular to the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322, the width of the second connection channel 323 can be are other multiples of the diameter of the first connecting hole 11 , which are not listed here.

In an exemplary embodiment of the present disclosure, on the extension line of the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322, the second coupling pad 32 is close to the third inner hole. The distance between the end of 321 and the hole wall of the third inner hole 321 may be 0.5 to 1.5 times the hole diameter of the first layer-changing hole.

For example, on the extension line of the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322, the end of the second coupling pad 32 close to the third inner hole 321 and the third inner hole 322 are connected to each other. The distance between the hole walls of the hole 321 can be 0.5 times, 0.8 times, 1.1 times, 1.4 times or 1.5 times the diameter of the first connecting hole 11. Of course, the center point of the third inner hole 321 and the center of the fourth inner hole 322 On the extension line of the connection line of the point, the distance between the end of the second coupling pad 32 close to the third inner hole 321 and the hole wall of the third inner hole 321 can be other multiples of the aperture of the first connection hole 11. This will not be listed one by one.

In an exemplary implementation of the present disclosure, continuing to refer to FIGS. 2 and 3 , the circuit structure of the present disclosure may further include a first signal input terminal 4 , a first signal output terminal 5 , and a second signal input terminal 6 and the second signal output terminal 7, where:

The first signal input terminal 4 can be connected to the first pad 12 and can be used to input the first data signal to the first layer change hole through the first pad 12 . For example, the first signal input terminal 4 can include at least one of a microstrip line, a transmission line, or a wire. The first signal input terminal 4 can be connected to a controller or a connector, and the control can be controlled through the first signal input terminal 4 . The signal output by the device or connector is transmitted to the first layer changing hole.

For example, the first signal input terminal 4 and the first pad 12 can be welded together by welding. For example, when the first signal input terminal 4 is a microstrip line, a transmission line or a wire, the first signal input terminal 4 can be welded together. Connect the microstrip line, transmission line or wire to the first pad 12 .

The first signal output terminal 5 can be connected to the second pad 13 and can be used to output the first data signal in the first layer change hole. For example, the first signal output terminal 5 may include at least one of a microstrip line, a transmission line, or a conductor. The first signal output terminal 5 may be connected to a load, and the first layer-changing hole may be connected to the first signal output terminal 5 through the first signal output terminal 5 . The signal is transmitted to the load.

For example, the first signal output terminal 5 and the second pad 13 can be welded together. For example, when the first signal output terminal 5 is a microstrip line, a transmission line or a wire, the microstrip line, the transmission line or the wire can be connected to the second pad 13 by welding.

The second signal input terminal 6 can be connected to the third pad 22 and can be used to input the second data signal to the second layer-changing hole through the third pad 22 . For example, the second signal input terminal 6 can include at least one of a microstrip line, a transmission line, or a wire. The second signal input terminal 6 can be connected to a controller or a connector, and the control can be controlled through the second signal input terminal 6 . The signal output by the switch or connector is transmitted to the second layer changing hole.

The second signal output terminal 7 can be connected to the fourth pad 23 and can be used to output the second data signal in the second layer change hole. For example, the second signal output terminal 7 may include at least one of a microstrip line, a transmission line, or a conductor. The second signal output terminal 7 may be connected to a load, and the second layer-changing hole may be connected through the second signal output terminal 7 . The signal is transmitted to the load.

For example, the second signal output terminal 7 and the fourth pad 23 can be welded together by welding. For example, when the second signal output terminal 7 is a microstrip line, a transmission line or a wire, the second signal output terminal 7 can be welded together. Connect the microstrip line, transmission line or wire to the fourth pad 23 together.

It should be noted that the load connected to the second signal output terminal 7 and the load connected to the first signal output terminal 5 may be different loads. At the same time, the controller or connector connected to the second signal input terminal 6 and the load connected to the first signal output terminal 5 may be different loads. The controller or connector connected to the first signal input terminal 4 may be the same controller or connector, or may be a different connector or controller, which is not specifically limited here. The signal input by the second signal input terminal 6 and the signal input by the first signal input terminal 4 may be the same or different, and are not specifically limited here.

In this disclosure, the crosstalk of the circuit structure after the coupling pad 3 is introduced can be tested. For example, the ADS software can be used to test the crosstalk between the first layer change hole and the second layer change hole before and after the coupling pad 3 is introduced. The far-end crosstalk formed was tested. As shown in Figure 9, the far-end crosstalk formed between the first layer-changing hole and the second layer-changing hole before the coupling pad 3 was introduced was 47mv. After the coupling pad 3 was introduced, the far-end crosstalk was 47mv. The far-end crosstalk formed between the first layer-changing hole and the second layer-changing hole is 14mv, which is 70.2% lower than the far-end crosstalk between the inner coupling pad 3; at the same time, the coupling pad 3 can be introduced through the ADS software Test the impedance between the front and rear signal input terminals, each signal output terminal and each layer change hole. See Figure 10. After the coupling pad 3 is introduced, each signal input terminal, each signal output terminal and each layer change hole are tested. The impedance between the holes (47.89Ohm) is significantly smaller than the impedance (62.08Ohm) between each signal input end and each signal output end and each layer change hole before the coupling pad 3 is introduced; in addition, the introduction of The far-end crosstalk formed between the first layer-changing component and the second layer-changing component in front and behind the coupling pad 3 is tested. See Figure 11. After introducing capacitive crosstalk, the final far-end crosstalk of the circuit structure is obtained. It is greatly reduced compared to before introducing capacitive crosstalk.

The present disclosure also provides a method for forming a circuit structure. Figure 12 shows a schematic diagram of a method for forming a circuit structure in an embodiment of the present disclosure. Referring to Figure 12, the forming method may include steps S110 to S130, wherein:

Step S110, forming a first layer-changing assembly, wherein the first layer-changing assembly includes a first layer-changing portion, a first pad and a second pad, wherein the first layer-changing portion includes a first layer-changing hole, and the first pad and the second pad are respectively connected to two ends of the first layer-changing hole;

Step S120: Form a second layer change component. The second layer change component includes a second layer change part, a third bonding pad, and a fourth bonding pad. The second layer change part includes a second layer change hole, and the The third pad and the fourth pad are respectively connected to both ends of the second layer change hole, and the second layer change hole is distributed in parallel with the first layer change hole;

Step S130: Form a coupling pad. The coupling pad includes a first coupling pad. The first coupling pad includes a first inner hole and a second inner hole. The first inner hole and the second inner hole are The holes are connected through the first connecting channel, the second layer-changing hole penetrates the first inner hole, and the first layer-changing hole penetrates the second inner hole.

In the method of forming a circuit structure of the present disclosure, a part of the data signal can enter the first switching hole from the first pad 12 and then flow out from the second pad 13; at the same time, another part of the data signal can enter the second switching hole from the third pad 22. The layer hole then flows out from the fourth pad 23, thereby realizing signal transmission with different loads. The first inner hole 311 of the first coupling pad 31 is sleeved on the outer periphery of the first layer change hole, and the second inner hole 312 is sleeved on the outer periphery of the second layer change hole. Between the first layer change hole and the second layer change hole, When at least one of the holes has a data signal flowing, two coupling pads (ie, the first coupling pad 31 and the second coupling pad 32) can be used to increase the gap between the first layer changing component 1 and the second layer changing component 2. Mutual capacitance, thereby canceling out the inductive crosstalk between the data signals in the first layer-changing hole and the second layer-changing hole, thereby reducing the far-end crosstalk between the first layer-changing hole and the second layer-changing hole, which can reduce The possibility of signal distortion; at the same time, since the coupling pad 3 is set between the first layer-changing component 1 and the second layer-changing component 2, there is no need to leave a special accommodation space for the coupling pad 3, which is conducive to the improvement of the circuit structure. Miniature design.

Each step of the method for forming the circuit structure of the present disclosure is described in detail below:

As shown in Figure 12, in step S110, a first layer change component is formed. The first layer change component includes a first layer change part, a first bonding pad and a second bonding pad. The first layer change part includes In a first layer-changing hole, the first bonding pad and the second bonding pad are respectively connected to two ends of the first layer-changing hole.

As shown in Figure 12, in step S120, a second layer change component is formed. The second layer change component includes a second layer change part, a third bonding pad, and a fourth bonding pad. The second layer change part includes A second layer change hole. The third pad and the fourth pad are connected to both ends of the second layer change hole. The second layer change hole is parallel to the first layer change hole. .

Continuing to refer to FIG. 4 , the second layer changing component 2 may include a second layer changing part (not shown in the figure), a third bonding pad 22 and a fourth bonding pad 23 . The second layer changing part may include a second layer changing part. hole, the third pad 22 and the fourth pad 23 may be connected to both ends of the second layer-changing hole respectively. For example, the second layer-changing hole may include a plurality of second connection holes 21 arranged in a stack, and a third pad 22 and a fourth pad 23 may be provided at both ends of each second connection hole 21 and adjacent to each other. The two second connection holes 21 may share one pad. For example, the fourth pad 23 of the upper second connection hole 21 among the two adjacent second connection holes 21 may be used as the lower second connection hole. 21 of the third pad 22.

In an exemplary embodiment of the present disclosure, the third pad 22 and/or the fourth pad 23 can be connected to the controller or connector through a microstrip line, a transmission line or a wire, so as to transmit the signal output by the controller or the connector to the second layer-changing hole through the microstrip line, the transmission line or the wire, and then transmit it to the load through the second layer-changing hole. In this process, the second layer-changing hole can be used as a printed wire connecting each layer for transmitting signals. For example, the circuit structure can be a multilayer PCB (Printed Circuit Board). During the signal transmission process, the signal enters the second connection hole 21 from the microstrip line, the transmission line or the wire connected to the third pad 22 of the second connection hole 21 of the top layer, and then enters the second connection hole 21 of the lower layer from the second connection hole 21 of the top layer, that is, the signal can enter the second layer-changing hole from the third pad 22 located at one end of the second layer-changing hole, and then output from the fourth pad 23 located at the other end of the second layer-changing hole. The transmission direction of the signal in the second layer-changing component 2 can be shown as shown by the arrow in FIG. 4.

In some embodiments of the present disclosure, the second layer-changing part may be in the shape of a rod, and both ends of the rod-shaped second layer-changing part may be penetrated, thereby forming one or more second connection holes 21 inside. The wall of the hole 21 may be made of a conductive material, which may be metal, for example. The cross section of the second connecting hole 21 may be circular, elliptical, rectangular or irregular, and is not particularly limited here. The third soldering pad 22 and the fourth soldering pad 23 can be connected to both ends of the second connection hole 21 respectively, and the third soldering pad 22 and the fourth soldering pad 23 can both be made of conductive material. For example, the material can be For metal. Both the third bonding pad 22 and the fourth bonding pad 23 can be circular disks, elliptical disks, rectangular disks or other shaped pads, which are not listed here.

As shown in Figure 12, in step S130, a coupling pad is formed, the coupling pad includes a first coupling pad, the first coupling pad includes a first inner hole and a second inner hole, the first The inner hole and the second inner hole are connected through a first connecting channel, the second layer-changing hole penetrates the first inner hole, and the first layer-changing hole penetrates the second inner hole.

The far-end crosstalk in the circuit structure can be calculated by the following formula:

When , the far-end crosstalk is 0.

Based on this, the coupling pad 3 can be introduced into the circuit structure to achieve the purpose of introducing capacitive crosstalk. Continuing to refer to Figures 2 and 3, the coupling pad 3 can be placed between the first layer changing component 1 and the second layer changing component 2. For example, the coupling pad 3 can be in the shape of a sheet or a plate. It can be sleeved on the outer circumference of the first layer change hole of the first layer change component 1 and the second layer change hole of the second layer change component 2 at the same time. The material of the coupling pad 3 can be a conductive material. When at least one of the layer hole and the second layer change hole has a data signal flowing, the coupling pad 3 can generate capacitive coupling with the first layer change part and the second layer change part, thereby generating capacitive crosstalk. When at least one of the first layer change hole and the second layer change hole has a data signal flowing, the first layer change can be added through two coupling pads (ie, the first coupling pad 31 and the second coupling pad 32 ). The mutual capacitance between component 1 and the second layer-changing component 2 can offset the inductive crosstalk between the data signals in the first layer-changing hole and the second layer-changing hole, thereby reducing the first layer-changing hole and the second layer-changing hole. Far-end crosstalk between layer holes can reduce the possibility of signal distortion; at the same time, since the coupling pad 3 is set between the first layer-changing component 1 and the second layer-changing component 2, there is no need to specially design the coupling pad 3 Leaving accommodating space facilitates the miniaturization design of the circuit structure.

There may be a spacing between the inner hole of the coupling pad and the layer-changing hole, and a dielectric material may be filled in the spacing. The dielectric material may have a lower dielectric constant, which can reduce the capacitive load, thereby increasing the impedance of the layer-changing hole and reducing the transmission delay.

In an exemplary embodiment of the present disclosure, as shown in FIG5 , the coupling pad 3 may include a first coupling pad 31, and the first coupling pad 31 may include a first inner hole 311 and a second inner hole 312 that are spaced apart, wherein the first inner hole 311 may penetrate the first coupling pad 31 in the thickness direction of the first coupling pad 31. The first inner hole 311 may be sleeved on the outer periphery of the second layer-changing hole, the second inner hole 312 may be sleeved on the outer periphery of the first layer-changing hole, and the first inner hole 311 and the second inner hole 312 may be connected through a first connecting channel 313, that is, the second layer-changing hole may penetrate the first inner hole 311, and the first layer-changing hole may penetrate the second inner hole 312.

In an exemplary embodiment of the present disclosure, as shown in FIG. 6 , the first inner hole 311 and the second layer-changing hole may be coaxially distributed, and the diameter of the first inner hole 311 may be larger than that of the second layer-changing hole. The hole diameter is such that the second layer-changing hole penetrates the first inner hole 311. For example, the pore diameter of the first inner hole 311 can be larger than the pore diameter of the second layer-changing hole, and at the same time less than or equal to 2 times the pore diameter of the second layer-changing hole. That is, the hole wall of the first inner hole 311 is in contact with the second layer-changing hole. The distance between the outer circumferences of the layer holes may be less than or equal to the hole diameter of the second layer-changing hole. For example, the first inner hole 311 and the second connecting hole 21 of the second layer-changing hole can be coaxially distributed, and the diameter of the first inner hole 311 can be larger than the diameter of the second connecting hole 21 to facilitate the penetration of the second connecting hole 21 The first inner hole 311.

Continuing to refer to Figures 5 and 6, the first connecting channel 313 can be connected between the first inner hole 311 and the second inner hole 312. The first connecting channel 313 can be in a strip shape, and the first inner hole 311 and the second inner hole 312 can be connected through the first connecting channel 313. In the thickness direction of the first coupling pad 31, the first connecting channel 313 can pass through the first coupling pad 31.

For example, on the extension line of the connecting line between the center point of the first inner hole 311 and the center point of the second inner hole 312, the end of the first coupling pad 31 close to the first inner hole 311 and the first inner hole 312 are connected to each other. The spacing between the hole walls of the hole 311 can be 0.5 times, 0.8 times, 1.1 times, 1.4 times or 1.5 times the diameter of the second connection hole 21 of the second layer-changing hole. Of course, the center point of the first inner hole 311 and On the extension of the connection line of the center point of the second inner hole 312 , the distance between the end of the first coupling pad 31 close to the first inner hole 311 and the hole wall of the first inner hole 311 can be the second connection hole 21 Other multiples of the aperture are not listed here.

In an exemplary embodiment of the present disclosure, as shown in FIG7 , the coupling pad 3 may further include a second coupling pad 32, and the second coupling pad 32 may include a third inner hole 321 and a fourth inner hole 322 that are spaced apart, wherein the third inner hole 321 may penetrate the second coupling pad 32 in the thickness direction of the second coupling pad 32. The third inner hole 321 may be sleeved on the outer periphery of the first layer-changing hole, the fourth inner hole 322 may be sleeved on the outer periphery of the second layer-changing hole, and the third inner hole 321 and the fourth inner hole 322 may be connected through the second connecting channel 323, that is, the first layer-changing hole may penetrate the third inner hole 321, and the second layer-changing hole may penetrate the fourth inner hole 322.

In some embodiments of the present disclosure, the fourth inner hole 322 may penetrate the second coupling pad 32 in the thickness direction of the second coupling pad 32 . The fourth inner hole 322 may be a circular hole, an elliptical hole, a rectangular hole or an irregular-shaped hole structure. Of course, the fourth inner hole 322 may also be a hole structure of other shapes, which will not be listed here. The shape of the fourth inner hole 322 may be the same as the shape of the third inner hole 321, or may be different from the shape of the third inner hole 321, and is not specifically limited here.

The pore diameter of the fourth inner hole 322 may be greater than or equal to the pore diameter of the second layer-changing hole. In some embodiments, the pore diameter of the fourth inner hole 322 may be slightly larger than the pore diameter of the second layer-changing hole, so that the fourth inner hole 322 Contact connection with the outer periphery of the second layer change hole. For example, the fourth inner hole 322 and the second connection hole 21 of the second layer-changing hole can be coaxially distributed, and the diameter of the fourth inner hole 322 can be larger than the diameter of the second connection hole 21 to facilitate the penetration of the second connection hole 21 Fourth inner hole 322.

For example, in a direction perpendicular to the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322 , the width of the second connection channel 323 may be 0.4 times the diameter of the first connection hole 11 , 0.8 times, 1.2 times, 1.6 times or 2 times. Of course, in the direction perpendicular to the connecting line between the center point of the third inner hole 321 and the center point of the fourth inner hole 322, the width of the second connection channel 323 can be are other multiples of the diameter of the first connection hole 11 , which are not listed here.

In an exemplary embodiment of the present disclosure, the method for forming a circuit structure of the present disclosure may further include steps S140 to S170, wherein:

Step S140: Form a first signal input terminal 4. The first signal input terminal 4 is connected to the first pad 12 for inputting a first signal to the first layer-changing hole through the first pad 12. data signal.

In step S150, a first signal output terminal 5 is formed, and the first signal output terminal 5 is connected to the second pad 13 for outputting the first data signal in the first layer change hole.

For example, the first signal output terminal 5 and the second pad 13 can be welded together by welding. For example, when the first signal output terminal 5 is a microstrip line, a transmission line or a wire, the first signal output terminal 5 can be welded together. Connect the microstrip line, transmission line or wire and the second pad 13 together.

Step S160, forming a second signal input terminal 6, which is connected to the third pad 22 and used to input a second signal to the second layer-changing hole through the third pad 22. data signal.

For example, the second signal input terminal 6 and the third pad 22 can be welded together by welding. For example, when the second signal input terminal 6 is a microstrip line, a transmission line or a wire, the second signal input terminal 6 can be welded together. Connect the microstrip line, transmission line or wire to the third pad 22 together.

In step S170, a second signal output terminal 7 is formed, and the second signal output terminal 7 is connected to the fourth pad 23 for outputting the second data signal in the second layer change hole.

For example, the second signal output terminal 7 and the fourth pad 23 can be welded together. For example, when the second signal output terminal 7 is a microstrip line, a transmission line or a wire, the microstrip line, the transmission line or the wire can be connected to the fourth pad 23 by welding.

In this disclosure, the crosstalk of the circuit structure after the coupling pad 3 is introduced can be tested. For example, the ADS software can be used to test the crosstalk between the first layer change hole and the second layer change hole before and after the coupling pad 3 is introduced. The far-end crosstalk formed was tested. As shown in Figure 9, the far-end crosstalk formed between the first layer-changing hole and the second layer-changing hole before the coupling pad 3 was introduced was 47mv. After the coupling pad 3 was introduced, the far-end crosstalk was 47mv. The far-end crosstalk formed between the first layer-changing hole and the second layer-changing hole is 14mv, which is 70.2% lower than the far-end crosstalk between the inner coupling pad 3; at the same time, the coupling pad 3 can be introduced through the ADS software Test the impedance between the front and rear signal input terminals, each signal output terminal and each layer change hole. See Figure 10. After the coupling pad 3 is introduced, each signal input terminal, each signal output terminal and each layer change hole are tested. The impedance between the holes (47.89Ohm) is significantly smaller than the impedance (62.08Ohm) between each signal input end and each signal output end and each layer change hole before the coupling pad 3 is introduced; in addition, the introduction of The far-end crosstalk formed between the first layer-changing component and the second layer-changing component in front and behind the coupling pad 3 is tested. See Figure 11. After introducing capacitive crosstalk, the final far-end crosstalk of the circuit structure is obtained. It is greatly reduced compared to before the introduction of capacitive crosstalk.

It should be noted that although the various steps of the method for forming a circuit structure in the present disclosure are described in a specific order in the drawings, this does not require or imply that these steps must be performed in the specific order, or that all steps must be performed. Follow the steps shown to achieve the desired results. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step for execution, and/or one step may be decomposed into multiple steps for execution, etc.

Embodiments of the present disclosure also provide a memory, which may include the circuit structure in any of the above embodiments. Its specific details, formation methods and beneficial effects have been described in detail in the corresponding circuit structure and the formation method of the circuit structure. , which will not be described again here.

For example, the memory can be dynamic random access memory (Dynamic Random Access Memory, DRAM), static random access memory (static random access memory, SRAM), etc. Of course, other storage devices may also be used, which are not listed here.

Other embodiments of the disclosure will be readily apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure that follow the general principles of the disclosure and include common knowledge or customary technical means in the technical field that are not disclosed in the disclosure. . It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims

A circuit structure including:

A first layer-changing component comprises a first layer-changing portion, a first pad and a second pad, wherein the first layer-changing portion comprises a first layer-changing hole, and the first pad and the second pad are respectively connected to two ends of the first layer-changing hole;

The second layer changing component includes a second layer changing part, a third bonding pad and a fourth bonding pad. The second layer changing part includes a second layer changing hole. The third bonding pad and the fourth bonding pad Connected to both ends of the second layer-changing hole respectively, the second layer-changing hole is parallel to the first layer-changing hole;

The coupling pad includes a first coupling pad, the first coupling pad includes a first inner hole and a second inner hole, the first inner hole and the second inner hole are connected through a first connection channel, so The second layer-changing hole penetrates the first inner hole, and the first layer-changing hole penetrates the second inner hole.
The circuit structure according to claim 1, wherein the first inner hole and the second layer-changing hole are coaxially distributed, and the hole wall of the first inner hole and the outer periphery of the second layer-changing hole are The spacing is less than or equal to the aperture of the second layer-changing hole; the second inner hole is in contact with the outer periphery of the first layer-changing hole.
The circuit structure according to claim 1, wherein the width of the first connecting channel is greater than 0 and less than or equal to twice the aperture of the second layer-changing hole.
The circuit structure according to claim 1, wherein on the extension line of the connecting line between the center point of the first inner hole and the center point of the second inner hole, the first coupling pad is close to the The distance between the end of the first inner hole and the hole wall of the first inner hole is 0.5 to 1.5 times the hole diameter of the second layer-changing hole.
The circuit structure according to any one of claims 1 to 4, wherein the coupling pad further includes a second coupling pad, the second coupling pad includes a third inner hole and a fourth inner hole, and the The third inner hole and the fourth inner hole are connected through a second connecting channel, the first layer-changing hole penetrates the third inner hole, and the second layer-changing hole penetrates the fourth inner hole.
The circuit structure of claim 5, wherein the third inner hole and the first layer-changing hole are coaxially distributed, and the hole wall of the third inner hole is in contact with the outer periphery of the first layer-changing hole. The spacing is less than or equal to the aperture of the first layer-changing hole; the fourth inner hole is in contact with the outer periphery of the second layer-changing hole.
The circuit structure according to claim 5, wherein the width of the second connection channel is greater than 0 and less than or equal to 2 times the aperture of the first layer-changing hole.
The circuit structure of claim 5, wherein the second coupling pad is close to the The distance between the end of the third inner hole and the hole wall of the third inner hole is 0.5 to 1.5 times the hole diameter of the first layer-changing hole.
The circuit structure according to any one of claims 1-8, wherein the circuit structure further includes:

A first signal input terminal, connected to the first pad, used to input a first data signal to the first layer-changing hole through the first pad;

A first signal output terminal is connected to the second pad and used to output the first data signal in the first layer-changing hole;

a second signal input terminal connected to the third pad for inputting a second data signal to the second layer-changing hole through the third pad;

The second signal output terminal is connected to the fourth pad and is used to output the second data signal in the second layer-changing hole.
A method for forming a circuit structure, comprising:

A first layer change component is formed, the first layer change component includes a first layer change part, a first bonding pad and a second bonding pad, the first layer change part includes a first layer change hole, the first bonding pad The pad and the second pad are respectively connected to both ends of the first layer change hole;

A second layer change component is formed, the second layer change component includes a second layer change part, a third bonding pad and a fourth bonding pad, the second layer change part includes a second layer change hole, and the third bonding pad The pad and the fourth pad are respectively connected to both ends of the second layer change hole, and the second layer change hole is parallel to the first layer change hole;

A coupling pad is formed, the coupling pad includes a first coupling pad, the first coupling pad includes a first inner hole and a second inner hole, and the first inner hole and the second inner hole pass through a third inner hole. A connecting channel is connected, the second layer-changing hole penetrates the first inner hole, and the first layer-changing hole penetrates the second inner hole.
The forming method according to claim 10, wherein the first inner hole and the second layer change hole are coaxially distributed, and the hole wall of the first inner hole and the outer periphery of the second layer change hole are The spacing is less than or equal to the aperture of the second layer-changing hole; the second inner hole is in contact with the outer periphery of the first layer-changing hole.
The forming method according to claim 10, wherein the width of the first connection channel is greater than 0 and less than or equal to 2 times the aperture of the second layer-changing hole.
The forming method according to claim 10, wherein on the extension line of the connecting line between the center point of the first inner hole and the center point of the second inner hole, the first coupling pad is close to the The distance between the end of the first inner hole and the hole wall of the first inner hole is 0.5 to 1.5 times the hole diameter of the second layer-changing hole.
The forming method according to any one of claims 10 to 13, wherein the coupling pad further includes a second coupling pad, the second coupling pad includes a third inner hole and a fourth inner hole, The third inner hole and the fourth inner hole are connected through a second connecting channel, the first layer-changing hole penetrates the third inner hole, and the second layer-changing hole penetrates the fourth inner hole.
According to the forming method of claim 14, wherein the third inner hole is coaxially distributed with the first layer-changing hole, and the distance between the hole wall of the third inner hole and the outer periphery of the first layer-changing hole is less than or equal to the aperture of the first layer-changing hole; the fourth inner hole is in contact with the outer periphery of the second layer-changing hole.
The forming method according to claim 14, wherein the width of the second connection channel is greater than 0 and less than or equal to 2 times the aperture of the first layer-changing hole.
The forming method according to claim 14, wherein the second coupling pad is close to the The distance between the end of the third inner hole and the hole wall of the third inner hole is 0.5 to 1.5 times the hole diameter of the first layer-changing hole.
The forming method according to any one of claims 10 to 17, wherein the forming method further includes:

forming a first signal input terminal, the first signal input terminal being connected to the first pad and being used for inputting a first data signal to the first layer-changing hole through the first pad;

forming a first signal output terminal, wherein the first signal output terminal is connected to the second pad and is used to output the first data signal in the first layer-changing hole;

Forming a second signal input terminal, the second signal input terminal is connected to the third pad for inputting a second data signal to the second layer-changing hole through the third pad;

A second signal output terminal is formed, and the second signal output terminal is connected to the fourth pad for outputting the second data signal in the second layer change hole.
A memory including the circuit structure according to any one of claims 1-9.