WO2024058088A1 - Dispositif électroluminescent à semi-conducteur - Google Patents

Dispositif électroluminescent à semi-conducteur Download PDF

Info

Publication number
WO2024058088A1
WO2024058088A1 PCT/JP2023/032957 JP2023032957W WO2024058088A1 WO 2024058088 A1 WO2024058088 A1 WO 2024058088A1 JP 2023032957 W JP2023032957 W JP 2023032957W WO 2024058088 A1 WO2024058088 A1 WO 2024058088A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting element
substrate
wiring
axis direction
Prior art date
Application number
PCT/JP2023/032957
Other languages
English (en)
Japanese (ja)
Inventor
智一郎 外山
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Publication of WO2024058088A1 publication Critical patent/WO2024058088A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Definitions

  • the present disclosure relates to a semiconductor light emitting device.
  • a semiconductor light emitting device including a light emitting diode (LED) as a light source is known (see, for example, Patent Document 1).
  • semiconductor light emitting devices are required to emit light over a wider range.
  • a semiconductor light emitting device that solves the above problems includes a substrate having a substrate surface, a side light emitting element provided on the substrate surface and having a light emitting side surface that emits light, and a side light emitting element provided on the substrate surface that emits light.
  • a top light emitting element having a light emitting upper surface, the side light emitting element being arranged with the light emitting side surface facing in a direction intersecting the thickness direction of the substrate, and the top light emitting element having the light emitting upper surface It is arranged so as to face the thickness direction of the substrate.
  • FIG. 1 is a perspective view of a semiconductor light emitting device according to a first embodiment.
  • FIG. 2 is a plan view of the semiconductor light emitting device of FIG. 1.
  • 3 is a plan view of the substrate of the semiconductor light emitting device of FIG. 2.
  • FIG. 4 is a back view of the substrate of FIG. 3.
  • FIG. 5 is a cross-sectional view of the semiconductor light emitting device taken along line F5-F5 in FIG.
  • FIG. 6 is a cross-sectional view showing the light emission mode of the side light emitting element and the top light emitting element in the semiconductor light emitting device of FIG. 5.
  • FIG. 7 is an enlarged view of the first light emitting side surface and its surroundings, showing a light emission mode of the side light emitting element in the semiconductor light emitting device of FIG.
  • FIG. FIG. 8 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device of the first embodiment.
  • FIG. 9 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device following FIG. 8.
  • FIG. 10 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device following FIG. 9.
  • FIG. 11 is a cross-sectional view schematically showing the semiconductor light emitting device of FIG. 10.
  • FIG. 12 is a plan view of the semiconductor light emitting device of the second embodiment.
  • FIG. 13 is a cross-sectional view showing the light emission mode of the side light emitting element and the top light emitting element in the cross sectional structure of the semiconductor light emitting device taken along the line F13-F13 in FIG. FIG.
  • FIG. 14 is an enlarged view of the second light emitting side surface and its surroundings, showing the light emission mode of the side light emitting element in the semiconductor light emitting device of FIG. 13.
  • FIG. 15 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device of the second embodiment.
  • FIG. 16 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device following FIG. 15.
  • FIG. 17 is a plan view of the semiconductor light emitting device of the third embodiment.
  • FIG. 18 is a plan view of the substrate of the semiconductor light emitting device of FIG. 17.
  • FIG. 19 is a back view of the substrate of FIG. 18.
  • FIG. 20 is a cross-sectional view of the semiconductor light emitting device taken along line F20-F20 in FIG. FIG.
  • FIG. 21 is a cross-sectional view showing the light emission mode of the first side light emitting element, the second side light emitting element, and the top light emitting element in the semiconductor light emitting device of FIG. 20.
  • FIG. 22 is a plan view of the semiconductor light emitting device of the fourth embodiment.
  • FIG. 23 is a cross-sectional view of a portion of the semiconductor light emitting device taken along line F23-F23 in FIG.
  • FIG. 24 is a cross-sectional view showing the light emission mode of the first side light emitting element, the second side light emitting element, and the top light emitting element in the semiconductor light emitting device of FIG. 22.
  • FIG. 25 is a plan view of the semiconductor light emitting device of the fifth embodiment.
  • FIG. 26 is a cross-sectional view showing the light emission mode of the first side light emitting element and the top light emitting element in the semiconductor light emitting device of FIG. 25.
  • FIG. 27 is a cross-sectional view showing a light emission mode of the second side light emitting element in the semiconductor light emitting device of FIG. 25.
  • FIG. 28 is a plan view of the semiconductor light emitting device of the sixth embodiment.
  • FIG. 29 is a plan view of the substrate of the semiconductor light emitting device of FIG. 28.
  • FIG. 30 is a back view of the substrate of FIG. 29.
  • FIG. 31 is a partially enlarged plan view of the semiconductor light emitting device of FIG. 28.
  • FIG. 32 is a partially enlarged plan view of the semiconductor light emitting device of FIG. 28.
  • FIG. 33 is a cross-sectional view showing the light emission mode of the first side light emitting element, the second side light emitting element, and the top light emitting element in the semiconductor light emitting device of FIG. 28.
  • FIG. 34 is a cross-sectional view showing the light emission mode of the third side light emitting element, the fourth side light emitting element, and the top light emitting element in the semiconductor light emitting device of FIG. 28.
  • FIG. 35 is a plan view of the semiconductor light emitting device of the seventh embodiment.
  • FIG. 36 is a plan view of the substrate of the semiconductor light emitting device of FIG. 35.
  • FIG. 37 is a back view of the substrate of FIG. 36.
  • FIG. 38 is a partially enlarged plan view of the semiconductor light emitting device of FIG. 35.
  • FIG. 39 is a partially enlarged plan view of the semiconductor light emitting device of FIG. 35.
  • FIG. FIG. 40 is a plan view of the semiconductor light emitting device of the eighth embodiment.
  • FIG. 41 is a cross-sectional view of the semiconductor light emitting device taken along line F41-F41 in FIG.
  • FIG. 42 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device of the eighth embodiment.
  • FIG. 43 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device following FIG. 42.
  • FIG. 44 is a plan view schematically showing an example of the manufacturing process of the semiconductor light emitting device following FIG. 43.
  • FIG. 45 is a cross-sectional view schematically showing an example of the manufacturing process of the semiconductor light emitting device of FIG. 44.
  • FIG. 46 is a plan view of the semiconductor light emitting device of the ninth embodiment.
  • FIG. 47 is a plan view of the semiconductor light emitting device of FIG. 46, with side light emitting elements, top light emitting elements, wires, sealing resin, and side walls omitted.
  • FIG. 48 is a cross-sectional view of the semiconductor light emitting device in which the side light emitting element and the top light emitting element of FIG. 46 are cut away.
  • FIG. 49 is a plan view of the semiconductor light emitting device of the tenth embodiment.
  • FIG. 50 is a cross-sectional view of the semiconductor light emitting device taken along line F50-F50 in FIG. 49.
  • FIG. 51 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 52 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 53 is a cross-sectional view of the semiconductor light emitting device taken along line F53-F53 in FIG.
  • FIG. 54 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 55 is a sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 56 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 57 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 58 is a cross-sectional view showing the light emission mode of the side light emitting element and the top light emitting element of the semiconductor light emitting device of FIG. 57.
  • FIG. 59 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 60 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 61 is a cross-sectional view of the semiconductor light emitting device taken along line F61-F61 in FIG.
  • FIG. 62 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 63 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 64 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 65 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 66 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 67 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 68 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 69 is a cross-sectional view showing the semiconductor light emitting device of FIG. 68 mounted on a circuit board.
  • FIG. 70 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 71 is a plan view of a semiconductor light emitting device according to a modification.
  • FIG. 72 is a cross-sectional view of the semiconductor light emitting device taken along line F72-F72 in FIG.
  • FIG. 73 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 74 is a cross-sectional view of a semiconductor light emitting device according to a modification.
  • FIG. 75 is a sectional view of a semiconductor light emitting device according to a modification.
  • FIGS. 1 to 11 show a schematic configuration of a semiconductor light emitting device 10 of the first embodiment
  • FIGS. 8 to 11 show an example of a method for manufacturing the semiconductor light emitting device 10 of the first embodiment.
  • planar view refers to viewing the semiconductor light emitting device 10 in the Z-axis direction of the mutually orthogonal XYZ axes shown in FIG. Furthermore, in the semiconductor light emitting device 10 shown in FIG. 1, the +Z direction is defined as the top, and the -Z direction is defined as the bottom. Unless otherwise specified, “planar view” refers to viewing the semiconductor light emitting device 10 from above along the Z-axis.
  • FIG. 1 shows a perspective structure of a semiconductor light emitting device 10
  • FIG. 2 shows a planar structure of the semiconductor light emitting device 10.
  • FIG. 3 shows a planar structure in which a side light emitting element 40, a top light emitting element 50, wires W1 and W2, a sealing resin 60, and a side wall 70, which will be described later, are omitted from FIG. 2.
  • FIG. 4 shows a backside structure of a substrate 20 of the semiconductor light emitting device 10, which will be described later.
  • the sealing resin 60 is omitted for easy understanding of the drawings.
  • FIG. 5 shows a schematic cross-sectional structure of the semiconductor light-emitting device 10, and FIG.
  • FIG. 6 shows a schematic cross-sectional structure of the semiconductor light-emitting device 10, schematically showing a region of light emitted from the semiconductor light-emitting device 10.
  • FIG. 7 shows a schematic cross-sectional structure of a part of the semiconductor light emitting device 10 for explaining light emitted from the side light emitting element 40. Note that in FIGS. 1 and 2, a diffusing material 67, which will be described later, is omitted for easy understanding of the drawings. In FIGS. 6 and 7, areas of light are shown with dots.
  • the semiconductor light emitting device 10 is formed into a rectangular flat plate shape with the thickness direction in the Z-axis direction.
  • the semiconductor light emitting device 10 includes a substrate 20, and a side light emitting element 40 and a top light emitting element 50 arranged on the substrate 20.
  • the substrate 20 is a component that supports both the side light emitting element 40 and the top light emitting element 50.
  • the substrate 20 is formed into a flat plate shape with the Z-axis direction being the thickness direction.
  • plane view is synonymous with "viewed from the thickness direction of the substrate”.
  • the substrate 20 has a rectangular shape in which the X-axis direction is the lateral direction and the Y-axis direction is the longitudinal direction when viewed from above.
  • the substrate 20 includes a front surface 21, a back surface 22 opposite to the front surface 21, and first to fourth side surfaces 23 to 26 (see FIG. 2) that connect the front surface 21 and the back surface 22.
  • the first substrate side surface 23 and the second substrate side surface 24 constitute both end surfaces of the substrate 20 in the Y-axis direction
  • the third substrate side surface 25 and the fourth substrate side surface 26 constitute the end surfaces of the substrate 20 in the X-axis direction. It constitutes both end faces of.
  • each of the first substrate side surface 23 and the second substrate side surface 24 extends in the X-axis direction in plan view.
  • Each of the third substrate side surface 25 and the fourth substrate side surface 26 extends in the Y-axis direction in plan view.
  • the first substrate side surface 23 constitutes an end surface in the +Y direction of both end surfaces in the Y-axis direction of the substrate 20, and the second substrate side surface 24 constitutes an end surface in the -Y direction.
  • the third substrate side surface 25 constitutes an end surface in the +X direction of both end surfaces in the X-axis direction of the substrate 20, and the fourth substrate side surface 26 constitutes an end surface in the -X direction.
  • the shape of the substrate 20 can be changed arbitrarily.
  • the substrate 20 may have a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction. Further, the shape of the substrate 20 in plan view may be square.
  • the substrate 20 is made of glass epoxy resin.
  • the substrate 20 may be formed of a material containing ceramic.
  • the ceramic-containing material include aluminum nitride (AlN) and alumina (Al 2 O 3 ).
  • AlN aluminum nitride
  • Al 2 O 3 alumina
  • the semiconductor light emitting device 10 includes a first wiring 31, a second wiring 32, and a third wiring 33 provided on the front surface 21 of the substrate, and a first electrode provided on the back surface 22 of the substrate. 34, a second electrode 35, and a third electrode 36.
  • the semiconductor light emitting device 10 also includes a first via 37 that electrically connects the first wiring 31 and the first electrode 34, and a second via 38 that electrically connects the second wiring 32 and the second electrode 35. and a third via 39 that electrically connects the third wiring 33 and the third electrode 36.
  • the first wiring 31, the second wiring 32, and the third wiring 33 are arranged so as to be spaced apart from each other in the longitudinal direction of the substrate 20, that is, in the Y-axis direction when viewed from above.
  • the second wiring 32 and the third wiring 33 are arranged so as to be spaced apart from each other in the lateral direction of the substrate 20, that is, in the X-axis direction when viewed from above.
  • Each of the first to third wirings 31 to 33 is formed of a material containing copper (Cu), for example. Note that each of the first to third wirings 31 to 33 can be arbitrarily changed within the range of the conductive material.
  • the first wiring 31 is arranged closer to the first substrate side surface 23 with respect to the second wiring 32 and the third wiring 33.
  • the first wiring 31 is arranged between the first substrate side surface 23 and the second wiring 32 and third wiring 33 in the Y-axis direction.
  • the second wiring 32 and the third wiring 33 are arranged between the first wiring 31 and the second substrate side surface 24 in the Y-axis direction.
  • the first wiring 31 has a rectangular shape in which the X-axis direction is the short direction and the Y-axis direction is the long direction when viewed from above. That is, the longitudinal direction of the first wiring 31 and the longitudinal direction of the substrate 20 match, and the lateral direction of the first wiring 31 and the lateral direction of the substrate 20 match. Note that the shape of the first wiring 31 in plan view can be arbitrarily changed.
  • the second wiring 32 is arranged closer to the third substrate side surface 25 with respect to the third wiring 33. It can also be said that the second wiring 32 is arranged between the third wiring 33 and the third substrate side surface 25 in the X-axis direction.
  • the second wiring 32 is arranged at a position overlapping with the first wiring 31 when viewed from the Y-axis direction.
  • the second wiring 32 is arranged at the center of the substrate surface 21 in the X-axis direction.
  • the second wiring 32 has a rectangular shape in which the X-axis direction is the short direction and the Y-axis direction is the long direction when viewed from above.
  • the longitudinal direction of the second wiring 32 and the longitudinal direction of the board 20 match, and the lateral direction of the second wiring 32 and the lateral direction of the board 20 match.
  • the area of the second wiring 32 is smaller than the area of the first wiring 31.
  • the length of the second wiring 32 in the X-axis direction is shorter than the length of the first wiring 31 in the X-axis direction
  • the length of the second wiring 32 in the Y-axis direction is shorter than the length of the first wiring 31 in the Y-axis direction. shorter than the length in the direction.
  • the shape of the second wiring 32 in plan view can be arbitrarily changed. In one example, the shape of the second wiring 32 in plan view may be a square.
  • the third wiring 33 is arranged closer to the fourth substrate side surface 26 with respect to the second wiring 32. It can also be said that the third wiring 33 is arranged between the second wiring 32 and the fourth substrate side surface 26 in the X-axis direction.
  • the third wiring 33 is arranged at a position overlapping the second wiring 32 when viewed from the X-axis direction.
  • the third wiring 33 is arranged closer to the second substrate side surface 24 with respect to the second wiring 32 . That is, the center of the third wiring 33 in the Y-axis direction is located closer to the second substrate side surface 24 than the center of the second wiring 32 in the Y-axis direction.
  • the third wiring 33 has a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction when viewed from above. That is, the longitudinal direction of the third wiring 33 and the lateral direction of the substrate 20 match, and the lateral direction of the third wiring 33 and the longitudinal direction of the substrate 20 match.
  • the area of the third wiring 33 is smaller than the area of the second wiring 32.
  • the length of the third wiring 33 in the X-axis direction is shorter than the length of the second wiring 32 in the X-axis direction
  • the length of the third wiring 33 in the Y-axis direction is shorter than the length of the second wiring 32 in the Y-axis direction. shorter than the length in the direction.
  • the shape of the third wiring 33 in plan view can be arbitrarily changed. In one example, the shape of the third wiring 33 in plan view may be a square.
  • the first electrode 34, the second electrode 35, and the third electrode 36 are configured as external electrodes when the semiconductor light emitting device 10 is mounted on a circuit board (not shown).
  • the first electrode 34 is arranged closer to the first substrate side surface 23 than the second electrode 35 and the third electrode 36 .
  • the first electrode 34 is arranged between the first substrate side surface 23 and the second and third electrodes 35 and 36 in the Y-axis direction.
  • the second electrode 35 and the third electrode 36 are arranged between the first electrode 34 and the second substrate side surface 24 in the Y-axis direction.
  • the first electrode 34 is arranged at a position overlapping the first wiring 31 in plan view.
  • FIG. 5 the first electrode 34 is arranged at a position overlapping the first wiring 31 in plan view.
  • the first electrode 34 has a rectangular shape in which the X-axis direction is the short direction and the Y-axis direction is the longitudinal direction when viewed from above. That is, the longitudinal direction of the first wiring 31 and the longitudinal direction of the substrate 20 match, and the lateral direction of the first wiring 31 and the lateral direction of the substrate 20 match. In plan view, the first electrode 34 is about one size larger than the first wiring 31 . Note that the shape of the first electrode 34 in plan view can be arbitrarily changed.
  • the second electrode 35 is arranged closer to the third substrate side surface 25 than the third electrode 36 . It can also be said that the second electrode 35 is arranged between the third electrode 36 and the third substrate side surface 25 in the X-axis direction.
  • the second electrode 35 is arranged at a position overlapping the first electrode 34 when viewed from the Y-axis direction.
  • the second electrode 35 is arranged at the center of the back surface 22 of the substrate in the X-axis direction.
  • the second electrode 35 is arranged at a position overlapping the second wiring 32 in plan view.
  • the second electrode 35 has a rectangular shape in which the X-axis direction is the short direction and the Y-axis direction is the longitudinal direction when viewed from above.
  • the longitudinal direction of the second electrode 35 and the longitudinal direction of the substrate 20 match, and the lateral direction of the second electrode 35 and the lateral direction of the substrate 20 match.
  • the area of the second electrode 35 is smaller than the area of the first electrode 34.
  • the length of the second electrode 35 in the X-axis direction is shorter than the length of the first electrode 34 in the X-axis direction
  • the length of the second electrode 35 in the Y-axis direction is shorter than the length of the first electrode 34 in the Y-axis direction. shorter than the length in the direction.
  • the second electrode 35 is about one size larger than the second wiring 32. Note that the shape of the second electrode 35 in plan view can be arbitrarily changed. In one example, the shape of the second electrode 35 in plan view may be a square.
  • the third electrode 36 is arranged closer to the fourth substrate side surface 26 with respect to the second electrode 35. It can also be said that the third electrode 36 is arranged between the second electrode 35 and the fourth substrate side surface 26 in the X-axis direction. The third electrode 36 is arranged at a position overlapping the second electrode 35 when viewed from the X-axis direction. The third electrode 36 is arranged closer to the second substrate side surface 24 than the second electrode 35 . That is, the center of the third electrode 36 in the Y-axis direction is located closer to the second substrate side surface 24 than the center of the second electrode 35 in the Y-axis direction.
  • the third electrode 36 has a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction when viewed from above. That is, the longitudinal direction of the third electrode 36 and the lateral direction of the substrate 20 match, and the lateral direction of the third electrode 36 and the longitudinal direction of the substrate 20 match.
  • the area of the third electrode 36 is smaller than the area of the second electrode 35.
  • the length of the third electrode 36 in the X-axis direction is shorter than the length of the second electrode 35 in the X-axis direction
  • the length of the third electrode 36 in the Y-axis direction is shorter than the length of the second electrode 35 in the Y-axis direction. shorter than the length in the direction.
  • the shape of the third electrode 36 in plan view can be arbitrarily changed. In one example, the shape of the third electrode 36 in plan view may be a square.
  • a plurality of first vias 37 are provided. Each first via 37 is arranged at a position overlapping both the first wiring 31 and the first electrode 34 in plan view. The plurality of first vias 37 are arranged to be spaced apart from each other in both the X-axis direction and the Y-axis direction. Each first via 37 penetrates the substrate 20 in the Z-axis direction. Each first via 37 is in contact with both the first wiring 31 and the first electrode 34.
  • a plurality of second vias 38 (two in the first embodiment) are provided. Each second via 38 is arranged at a position overlapping both the second wiring 32 and the second electrode 35 in plan view. The plurality of second vias 38 are spaced apart from each other and arranged in a line in the Y-axis direction. Each second via 38 penetrates the substrate 20 in the Z-axis direction. Each second via 38 is in contact with both the second wiring 32 and the second electrode 35.
  • the third via 39 is arranged at a position overlapping both the third wiring 33 and the third electrode 36 in plan view.
  • the third via 39 penetrates the substrate 20 in the Z direction.
  • the third via 39 is in contact with both the third wiring 33 and the third electrode 36.
  • Each of the first vias 37, each of the second vias 38, and each of the third vias 39 is formed of a material containing, for example, Cu. Note that each of the first vias 37, each of the second vias 38, and each of the third vias 39 is not limited to Cu and can be arbitrarily changed as long as it is a conductive material.
  • first vias 37, the second vias 38, and the third vias 39 can be changed arbitrarily.
  • the number of first vias 37 may be one.
  • the side light emitting element 40 is provided on the substrate surface 21.
  • the side light emitting element 40 is mounted on the first wiring 31.
  • the side light emitting element 40 is mounted on the first wiring 31. More specifically, the side light emitting element 40 is bonded to the first wiring 31 using a conductive bonding material SD (see FIG. 5) such as solder paste or silver paste. Therefore, the side light emitting element 40 is located closer to the first substrate side surface 23 (first sealed end surface 63 described later) than the second wiring 32 and the third wiring 33. In other words, both the second wiring 32 and the third wiring 33 are located closer to the second substrate side surface 24 (second sealed end surface 64 described later) than the side light emitting element 40 .
  • Both the second wiring 32 and the third wiring 33 are provided at a position closer to the second substrate side surface 24 (second sealing end surface 64) with respect to a second light emitting side surface LS2, which will be described later, of the side light emitting element 40. I can say that.
  • the side light emitting element 40 is a semiconductor laser element that emits light in a predetermined wavelength band, and is, for example, a laser diode.
  • the side light emitting element 40 functions as a light source of the semiconductor light emitting device 10.
  • the side light emitting device 40 is an edge emitting laser device.
  • the configuration of the side-emitting element 40 as an edge-emitting type laser element is not particularly limited, in the first embodiment, a Fabry-Perot type laser diode element is employed.
  • the side light emitting element 40 is formed into a flat plate shape with the thickness direction in the Z-axis direction.
  • the side light emitting element 40 has a rectangular shape having a longitudinal direction and a lateral direction when viewed from above.
  • the side light emitting element 40 is arranged such that its longitudinal direction is along the Y-axis direction and its transversal direction is along the X-axis direction.
  • the side light emitting element 40 includes an element front surface 41, an element rear surface 42 facing opposite to the element front surface 41, and first to fourth elements connecting the element front surface 41 and the element rear surface 42. It has element side surfaces 43 to 46.
  • the element surface 41 faces the same side as the substrate surface 21 of the substrate 20, and the element back surface 42 faces the substrate surface 21.
  • the first element side surface 43 and the second element side surface 44 constitute both end surfaces of the side light emitting element 40 in the longitudinal direction
  • the third element side surface 45 and the fourth element side surface 46 constitute both end surfaces of the side light emitting element 40 in the lateral direction. It consists of In the first embodiment, the first element side surface 43 and the second element side surface 44 constitute both end surfaces of the side light emitting element 40 in the Y-axis direction
  • the third element side surface 45 and the fourth element side surface 46 constitute the side surface of the side light emitting element 40 . It constitutes both end faces in the X-axis direction.
  • the first element side surface 43 constitutes an end surface in the +Y direction of both end surfaces in the Y-axis direction of the side light emitting element 40, and faces the same side as the first substrate side surface 23.
  • the second element side surface 44 constitutes an end surface in the -Y direction of both end surfaces in the Y-axis direction of the side light emitting element 40, and faces the same side as the second substrate side surface 24.
  • the third element side surface 45 constitutes an end surface in the +X direction of both end surfaces in the X-axis direction of the side light emitting element 40, and faces the same side as the third substrate side surface 25.
  • the fourth element side surface 46 constitutes an end surface in the -X direction of both end surfaces in the X-axis direction of the side light emitting element 40, and faces the same side as the fourth substrate side surface 26.
  • the first element side surface 43 constitutes the first light emitting side surface LS1 that emits the laser light of the side light emitting element 40. Since the first element side surface 43 faces in the direction intersecting the thickness direction of the substrate 20 (in the first embodiment, the direction perpendicular to the thickness direction of the substrate 20), the first light emitting side surface LS1 faces in the thickness direction of the substrate 20. It can be said that it faces in a direction that intersects (perpendicularly) with.
  • the first element side surface 43 (first light emitting side surface LS1) faces the same side as the first substrate side surface 23. Therefore, in plan view, the side light emitting element 40 emits laser light mainly directed in the +Y direction.
  • the +Y direction corresponds to the "first direction”. That is, the first light emitting side surface LS1 faces the first direction.
  • the second element side surface 44 constitutes a second light emitting side surface LS2 that emits the laser light of the side light emitting element 40. Since the second element side surface 44 faces in the direction intersecting the thickness direction of the substrate 20 (in the first embodiment, the direction perpendicular to the thickness direction of the substrate 20), the second light emitting side surface LS2 faces in the thickness direction of the substrate 20. It can be said that it faces in a direction that intersects (perpendicularly) with.
  • the second element side surface 44 (first light emitting side surface LS2) faces the same side as the second substrate side surface 24. Therefore, in plan view, the side light emitting element 40 emits laser light mainly directed in the ⁇ Y direction.
  • the -Y direction corresponds to "a second direction opposite to the first direction.” That is, the second light emitting side surface LS2 faces the second direction.
  • the output of the laser light emitted from the first light emitting side LS1 and the output of the laser light emitted from the second light emitting side LS2 are different from each other.
  • the ratio of the output of the laser light emitted from the first light emitting side LS1 and the output of the laser light emitted from the second light emitting side LS2 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the first light emitting side surface LS1 and the second light emitting side surface LS2.
  • the reflectance of the reflective film formed on the first light emitting side surface LS1 is set to be lower than the reflectance of the reflective film formed on the second light emitting side surface LS2.
  • the top light emitting element 50 is provided on the substrate surface 21.
  • the top light emitting element 50 is mounted on the second wiring 32.
  • the top light emitting element 50 is mounted on the second wiring 32. More specifically, the top light emitting element 50 is bonded to the second wiring 32 using a conductive bonding material SD (see FIG. 5).
  • the top light emitting element 50 is arranged at a position facing the second light emitting side surface LS2 (second substrate side surface 44) of the side light emitting element 40 while being separated from the side light emitting element 40 in the Y-axis direction.
  • the top light emitting device 50 is arranged closer to the second substrate side surface 24 with respect to the side light emitting device 40.
  • the top light emitting element 50 is spaced apart from the second light emitting side surface LS2 (second element side surface 24) of the side light emitting element 40 in the ⁇ Y direction (second direction).
  • the side light emitting element 40 has an anode electrode 47 formed on the front surface 41 of the element, and a cathode electrode 48 formed on the back surface 42 of the element.
  • the cathode electrode 48 is in contact with the conductive bonding material SD. That is, the cathode electrode 48 is electrically connected to the first wiring 31 by the conductive bonding material SD. Therefore, the cathode electrode 48 is electrically connected to the first electrode 34 via the first wiring 31 and the plurality of first vias 37.
  • the semiconductor light emitting device 10 includes a wire W1 that electrically connects the anode electrode 47 and the third wiring 33. As shown in FIG. 2, the wire W1 extends toward the second substrate side surface 24 and closer to the fourth substrate side surface 26 in plan view.
  • the wire W1 is made of, for example, gold (Au), silver (Ag), aluminum (Al), Cu, or the like.
  • the anode electrode 47 is electrically connected to the third electrode 36 via the third wiring 33 and the third via 39.
  • the wire W1 is a bonding wire formed by a wire bonding device.
  • the bonding portion of the wire W1 with the third wiring 33 is the first bonding
  • the bonding portion with the anode electrode 47 is the second bonding.
  • the height (maximum height) of the wire W1 is lowered compared to a configuration in which the bonding portion of the wire W1 with the anode electrode 47 is the first bonding
  • the bonding portion with the third wiring 33 is the second bonding. can do.
  • the bonding portion of the wire W1 with the anode electrode 47 may be the first bonding
  • the bonding portion with the third wiring 33 may be the second bonding.
  • the top emitting device 50 is a semiconductor laser device that emits light in a predetermined wavelength band, and is, for example, a surface emitting laser device.
  • the top light emitting element 50 functions as a light source of the semiconductor light emitting device 10 together with the side light emitting element 40 .
  • the configuration of the top emitting element 50 as a surface emitting type laser element is not particularly limited, in the first embodiment, a VCSEL (Vertical Cavity Surface Emitting Laser) is adopted.
  • the top light emitting element 50 may be an LED (Light Emitting Diode) element instead of a semiconductor laser element.
  • the top light emitting element 50 has an element front surface 51 and an element back surface 52 facing the opposite side from the element front surface 51.
  • the element surface 51 faces the same side as the substrate surface 21, and the element back surface 52 faces the substrate surface 21.
  • the element surface 51 includes the light emitting upper surface 53 that emits the laser light of the top light emitting element 50. Therefore, the light emitting upper surface 53 faces the same side as the substrate surface 21.
  • the light emitting upper surface 53 emits laser light mainly directed in the +Z direction.
  • At least one of the wavelength and output in the side light emitting element 40 and the top light emitting element 50 are different from each other.
  • the laser light output of the side light emitting element 40 and the laser light output of the top light emitting element 50 are different from each other.
  • the wavelength of the laser light from the side light emitting element 40 and the wavelength of the laser light from the top light emitting element 50 are the same.
  • the wavelength of the laser light of the side light emitting element 40 and the wavelength of the laser light of the top light emitting element 50 are different from each other, and the output of the laser light of the side light emitting element 40 and the output of the laser light of the top light emitting element 50 are different from each other. You can leave it there. Further, while the output of the laser light of the side light emitting element 40 and the output of the laser light of the top light emitting element 50 are the same, the wavelength of the laser light of the side light emitting element 40 and the wavelength of the laser light of the top light emitting element 50 are different. They may be different from each other.
  • both the wavelength and output of the side light emitting element 40 and the top light emitting element 50 may be the same. That is, the output of the laser light of the side light emitting element 40 and the output of the laser light of the top light emitting element 50 are the same, and the wavelength of the laser light of the side light emitting element 40 and the wavelength of the laser light of the top light emitting element 50 are the same. They may be the same.
  • the top light emitting device 50 includes an anode electrode 54 formed in a region of the front surface 51 of the device different from the top light emitting surface 53, and a cathode electrode 55 formed on the back surface 52 of the device.
  • the cathode electrode 55 is in contact with the conductive bonding material SD. That is, the cathode electrode 55 is electrically connected to the second wiring 32 by the conductive bonding material SD. Therefore, the cathode electrode 55 is electrically connected to the second electrode 35 via the second wiring 32 and the plurality of second vias 38.
  • the semiconductor light emitting device 10 includes a wire W2 that electrically connects the anode electrode 54 and the third wiring 33.
  • the wire W2 is made of the same material as the wire W1, for example.
  • the anode electrode 54 is electrically connected to the third electrode 36 via the third wiring 33 and the third via 39.
  • the third wiring 33 is electrically connected to the anode electrode 47 of the side light emitting element 40 and the anode electrode 54 of the top light emitting element 50 in common. Therefore, the third electrode 36 electrically connected to the third wiring 33 is configured as a common external electrode of the anode electrode 47 of the side light emitting element 40 and the anode electrode 54 of the top light emitting element 50.
  • the wire W2 is a bonding wire formed by a wire bonding device.
  • the bonding portion of the wire W2 with the third wiring 33 is the first bonding
  • the bonding portion with the anode electrode 54 is the second bonding. This allows the height (maximum height) of the wire W2 to be lowered compared to a configuration in which the bonding portion of the wire W2 with the anode electrode 54 is first bonded and the bonding portion with the third wiring 33 is second bonding. can do.
  • the bonding portion of the wire W2 with the anode electrode 54 may be the first bonding
  • the bonding portion with the third wiring 33 may be the second bonding.
  • the semiconductor light emitting device 10 of the first embodiment includes a transparent sealing resin 60 that seals both the side light emitting element 40 and the top light emitting element 50, It further includes a side wall 70 surrounding the sealing resin 60.
  • the sealing resin 60 is in contact with the substrate surface 21 and seals the first wiring 31, the second wiring 32, the third wiring 33, the side light emitting element 40, the top light emitting element 50, and the wires W1 and W2. .
  • the sealing resin 60 is provided on the substrate 20.
  • the sealing resin 60 plays a role of diffusing (scattering) and transmitting the laser light emitted from both the side light emitting element 40 and the top light emitting element 50.
  • the sealing resin 60 is made of a material containing at least one of silicone resin, epoxy resin, and acrylic resin. In one example, the sealing resin 60 is made of silicone resin.
  • the sealing resin 60 has a sealing surface 61 facing the same side as the substrate surface 21 and first to fourth sealing end surfaces 63 to 66 that intersect with the sealing surface 61.
  • the sealing surface 61 is a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. In plan view, the area of the sealing surface 61 is smaller than the area of the substrate surface 21.
  • the first to fourth sealing end surfaces 63 to 66 are sealing end surfaces perpendicular to the sealing surface 61 in the first embodiment.
  • the first sealed end surface 63 and the second sealed end surface 64 constitute both end surfaces of the sealing resin 60 in the Y-axis direction.
  • Each of the first sealed end surface 63 and the second sealed end surface 64 extends along the X-axis direction in plan view.
  • the third sealed end surface 65 and the fourth sealed end surface 66 constitute both end surfaces of the sealing resin 60 in the X-axis direction.
  • Each of the third sealed end surface 65 and the fourth sealed end surface 66 extends along the Y-axis direction in plan view.
  • the first sealed end surface 63 faces the same side as the first substrate side surface 23, and the second sealed end surface 64 faces the same side as the second substrate side surface 24. That is, the second sealed end surface 64 is an end surface opposite to the first sealed end surface 63.
  • the first sealing end surface 63 is formed flush with the first substrate side surface 23 .
  • the first sealed end surface 63 is spaced apart from the first light emitting side surface LS1 of the side light emitting element 40 in the +Y direction (first direction).
  • the second sealed end surface 64 is arranged closer to the first substrate side surface 23 than the second substrate side surface 24 . It can also be said that the second sealed end surface 64 is located between the side light emitting element 40 and the second substrate side surface 24 in the Y-axis direction.
  • the second sealed end surface 64 is spaced apart from the second light emitting side surface LS2 of the side light emitting element 40 in the ⁇ Y direction (second direction).
  • the first sealed end surface 63 faces the same side as the first element side surface 43 of the side light emitting element 40. In other words, the first sealed end surface 63 faces the same side as the first light emitting side surface LS1. Therefore, it can be said that the side light emitting element 40 includes the first light emitting side surface LS1 that emits laser light toward the first sealed end surface 63.
  • the second sealed end surface 64 faces the same side as the second element side surface 44 of the side light emitting element 40 . In other words, the second sealing end surface 64 faces the same side as the second light emitting side surface LS2. Therefore, it can be said that the side light emitting element 40 includes a second light emitting side surface LS2 that emits laser light toward the second sealed end surface 64.
  • the first sealed end surface 63 is a dicing surface subjected to dicing processing. In this case, cutting marks are formed on the first sealing end surface 63 due to the dicing process.
  • first sealing end surface 63 may be rougher than sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of the first sealing end surface 63 may be larger than the arithmetic mean roughness (Ra) of the sealing surface 61.
  • the third sealed end surface 65 faces the same side as the third substrate side surface 25, and the fourth sealed end surface 66 faces the same side as the fourth substrate side surface 26.
  • the third sealed end surface 65 is arranged closer to the fourth substrate side surface 26 than the third substrate side surface 25. It can also be said that the third sealed end surface 65 is located between the side light emitting element 40 and the third substrate side surface 25 in the X-axis direction.
  • the fourth sealed end surface 66 is arranged closer to the third substrate side surface 25 than the fourth substrate side surface 26 . It can also be said that the fourth sealed end surface 66 is located between the side light emitting element 40 and the fourth substrate side surface 26 in the X-axis direction.
  • the sealing resin 60 includes a diffusion material 67 that diffuses light. More specifically, the diffusion material 67 diffuses the light inside the sealing resin 60 by reflecting (scattering) the light at the interface between the resin in the sealing resin 60 and the diffusion material 67 . Thereby, the diffusion material 67 diffuses the laser light emitted from each of the side light emitting element 40 and the top light emitting element 50 inside the sealing resin 60, and the directivity angle of the laser light emitted from the sealing resin 60 is play a role in expanding the
  • the material of the diffusion material 67 is not particularly limited, but for example, silica or other glass materials can be used.
  • a spherical silica filler is used as the diffusion material 67.
  • the particle size of the diffusion material 67 is not particularly limited, but for example, the particle size is sufficiently small relative to the wavelength of the laser light emitted from each of the side light emitting element 40 and the top light emitting element 50 so that scattering occurs dominantly. is selected.
  • the blending ratio of the diffusion material 67 to the resin of the sealing resin 60 is not particularly limited, and may be greater than 0% and less than 100%.
  • the blending ratio of the diffusion material 67 is preferably selected in a range of greater than 0% and less than or equal to 60%, and more preferably in a range of greater than or equal to 20% and less than or equal to 60%.
  • a material having a smaller coefficient of thermal expansion than the resin of the sealing resin 60 is selected as the diffusion material 67.
  • the diffusion material 67 is dispersed in the sealing resin 60 as fine particles.
  • the diffusion material 67 is mixed with the sealing resin 60 at a predetermined mixing ratio.
  • the diffusing material 67 scatters the laser light from the side light emitting element 40 and the top light emitting element 50 at a position different from the peak position of the laser light output from the side light emitting element 40 and the top light emitting element 50. It is mixed into the sealing resin 60 as shown in FIG. In one example, the diffusion material 67 is evenly distributed within the sealing resin 60.
  • the side wall 70 is provided on the substrate 20.
  • the side wall 70 is made of, for example, a light-shielding material.
  • a black epoxy resin is used as an example of a light-shielding material.
  • engineered plastic having heat resistance can also be used as the material for the side wall 70.
  • the side wall 70 is arranged on the outer periphery of the substrate 20. As shown in FIG. Note that the material constituting the side wall 70 can be changed arbitrarily.
  • the sidewall 70 may be made of a translucent material. Further, in one example, the side wall 70 may be made of a metal material, ceramic, or the like instead of the resin material.
  • the side wall 70 includes a pair of first side wall portions 71 that are spaced apart from each other, and a second side wall portion 72 that connects the pair of first side wall portions 71.
  • the pair of first side wall portions 71 and second side wall portions 72 are integrally formed.
  • the side wall 70 is formed by resin molding.
  • the pair of first side wall portions 71 are arranged to be spaced apart from each other in the X-axis direction.
  • each first side wall portion 71 extends in the Y-axis direction, that is, in the longitudinal direction of the substrate 20.
  • the second side wall portion 72 extends in the X-axis direction, that is, in the lateral direction of the substrate 20.
  • the second side wall portion 72 is arranged closer to the second substrate side surface 24 of the substrate 20 than both the side light emitting element 40 and the top light emitting element 50 .
  • the pair of first side wall portions 71 are arranged on both sides of the sealing resin 60 in the X-axis direction. One of the pair of first side walls 71 is in contact with the third sealing end surface 65 of the sealing resin 60 , and the other one is in contact with the fourth sealing end surface 66 of the sealing resin 60 .
  • the second side wall portion 72 covers the second sealing end surface 64 of the sealing resin 60. The second side wall portion 72 is in contact with the second sealed end surface 64 .
  • the side wall 70 surrounds the sealing resin 60 and has an opening that exposes the first sealing end surface 63. Therefore, the side wall 70 surrounds both the side light emitting element 40 and the top light emitting element 50, and can be said to be open to expose the first light emitting side surface LS1 of the side light emitting element 40.
  • the area of the first wiring 31 is larger than the area of the side light emitting element 40 in plan view. More specifically, the length of the first wiring 31 in the X-axis direction is longer than the length of the side light emitting element 40 in the X-axis direction, and the length of the first wiring 31 in the Y-axis direction is longer than the length of the side light emitting element 40 in the Y-axis direction. longer than the length in the direction.
  • the side light emitting element 40 is arranged in a portion of the first wiring 31 closer to the second wiring 32 (second substrate side surface 24). More specifically, the center of the side light emitting element 40 in the Y-axis direction is located closer to the second interconnect 32 (second substrate side surface 24) than the center of the first interconnect 31 in the Y-axis direction.
  • the first wiring 31 includes a first end surface 31A and a second end surface 31B that constitute both end surfaces of the first wiring 31 in the Y-axis direction.
  • the first end surface 31A is the end surface of the first wiring 31 that is closer to the first substrate side surface 23, and the second end surface 31B is the end surface of the first wiring 31 that is closer to the second substrate side surface 24. It is an end face.
  • the first end surface 31A is arranged inside the first substrate side surface 23 (closer to the second substrate side surface 24).
  • the first end surface 31A is closer to the first substrate side surface 23 than the center in the Y-axis direction between the first substrate side surface 23 and the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 in a plan view. It is located in
  • the first wiring 31 is connected to the first light emitting side surface LS1 of the side light emitting element 40 and the first It includes a first extending portion 31C that is a portion between the end surface 31A and a second extending portion 31D that is a portion between the second light emitting side surface LS2 and the second end surface 31B.
  • the first wiring 31 has a first extending portion 31C that is a portion extending from the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 toward the first sealing end surface 63. It can also be said that it has.
  • the first extending portion 31C includes a first end surface 31A.
  • the second extending portion 31D includes a second end surface 31B.
  • the distance D1 between the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 and the first end surface 31A of the first wiring 31 in the Y-axis direction is equal to the second element side surface 44 (of the side light emitting element 40). It is larger than the distance D2 between the second light emitting side surface LS2) and the second end surface 31B of the first wiring 31 in the Y-axis direction.
  • the distance D1 can be said to be the length of the first extension part 31C in the Y-axis direction
  • the distance D2 can be said to be the length of the second extension part 31D in the Y-axis direction.
  • the laser light emitted by the side light emitting element 40 has higher directivity than that of a light emitting diode (LED).
  • Laser light from the side light emitting element 40 configured as a Fabry-Perot laser diode element as in the first embodiment is emitted in the +Y direction that is substantially orthogonal to the thickness direction (Z-axis direction) of the substrate 20. be done.
  • the laser light from the side light emitting element 40 is diffused (scattered) by the diffusing material 67.
  • the laser light includes laser light directed toward the substrate surface 21.
  • the first extension portion 31C reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the first sealing end face 63 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 .
  • the semiconductor light emitting device 10 can be said to include the first reflecting section 80 that reflects at least a portion of the laser light emitted from the first light emitting side surface LS1 of the side light emitting element 40 and directed toward the substrate surface 21.
  • the first extending portion 31C of the first wiring 31 constitutes the first reflecting portion 80.
  • the first wiring 31 has a portion extending from the first light emitting side surface LS1 toward the first sealed end surface 63 as the first reflecting portion 80.
  • the position of the first end surface 31A in the Y-axis direction can be changed arbitrarily.
  • the first end surface 31A may be arranged flush with the first substrate side surface 23 in plan view.
  • the position of the first end surface 31A in the Y-axis direction may be such a position that the first extension portion 31C can reflect at least a portion of the laser beam directed toward the substrate surface 21.
  • the laser light from the top light emitting element 50 employing a VCSEL is emitted substantially along the Z-axis direction toward the +Z direction.
  • This laser light is diffused (scattered) by the diffusing material 67.
  • the laser light emitted from the top light emitting element 50 includes laser light that travels in an oblique direction toward the first to fourth sealing end surfaces 63 to 66 as it goes in the +Z direction.
  • the directivity angle of the laser light emitted from the sealing resin 60 becomes wider.
  • the area of the laser beam emitted from the sealing surface 61 is larger than the area of the light emitting upper surface 53 of the top light emitting element 50.
  • FIGS. 8 to 11 show a configuration in which four semiconductor light emitting devices 10 can be manufactured at one time for convenience, the configuration is not limited to this, and a configuration can be configured in which more semiconductor light emitting devices 10 can be manufactured at one time. You can.
  • the method for manufacturing the semiconductor light emitting device 10 includes the steps of preparing a substrate 820, forming a side wall 870 on the substrate 820, mounting the side light emitting element 40 and the top light emitting element 50, and forming wires W1 and W2.
  • the method includes a step of forming a sealing resin 860, and a step of separating into pieces.
  • the first wiring 31, the second wiring 32, the third wiring 33, the first electrode 34, the second electrode 35, and the third electrode 36 (first to third A substrate 820 is prepared in which electrodes 34 to 36 (see FIG. 4), a first via 37, a second via 38, and a third via 39 are formed.
  • glass epoxy resin is used for the substrate 820.
  • the substrate 820 may be made of ceramic, for example.
  • the substrate 820 is formed in a size that includes, for example, a plurality of substrates 20, and includes first wiring 31, second wiring 32, third wiring 33, first electrode 34, second electrode 35, and the like according to the number of substrates 20.
  • a third electrode 36, a first via 37, a second via 38, and a third via 39 are formed.
  • Each of the first to third wirings 31 to 33 is provided on the substrate surface 821 of the substrate 820.
  • Each of the first to third electrodes 34 to 36 is provided on the back surface 822 of the substrate 820 (see FIG. 11).
  • the sidewall 870 is formed on the substrate 820 by, for example, resin molding.
  • resin molding include transfer molding and compression molding. By such resin molding, the side wall 870 is integrated with the substrate 820.
  • the side wall 870 which is a molded product previously formed by resin molding such as injection molding, may be attached onto the substrate 820 using, for example, an adhesive.
  • side wall 870 and substrate 820 are integrated.
  • the side wall 870 is not limited to being made of resin, and may be made of metal or ceramic. In this case as well, the preformed sidewall 870 may be bonded to the substrate 820 by adhesive or metal bonding.
  • the side wall 870 is a component that constitutes the side wall 70, and is formed with a plurality of unit side walls surrounding the first wiring 31, the second wiring 32, and the third wiring 33 in plan view.
  • the number of the plurality of unit side walls is set depending on, for example, the number of first wirings 31 on the substrate 820.
  • the step of mounting the side light emitting element 40 and the top light emitting element 50 includes the step of mounting the side light emitting element 40 on the first wiring 31, and the step of mounting the side light emitting element 40 on the first wiring 31.
  • the side light emitting element 40 is die-bonded onto the first wiring 31, and the top light emitting element 50 is die-bonded onto the second wiring 32.
  • the cathode electrode 48 (see FIG. 11) of the side light emitting element 40 and the first wiring 31 are electrically connected
  • the cathode electrode 55 (see FIG. 11) of the top light emitting element 50 and the second wiring 32 are electrically connected. connected.
  • wires W1 and W2 are formed.
  • a wire W2 is formed to electrically connect the two.
  • Wires W1 and W2 are bonding wires formed by a wire bonding device.
  • first bonding is performed on the third wiring 33 side of the wire W1
  • second bonding is performed on the anode electrode 47 side of the side light emitting element 40.
  • the first bonding is performed on the third wiring 33 side of the wire W2, and the second bonding is performed on the anode electrode 54 side of the top light emitting element 50. Note that the first bonding may be performed on the anode electrode 47 side of the wire W1, and the second bonding may be performed on the third wiring 33 side. The first bonding may be performed on the anode electrode 54 side of the wire W2, and the second bonding may be performed on the third wiring 33 side.
  • the sealing resin 860 is formed in a space surrounded by the substrate 820 and the unit side walls of the side walls 870, for example, by resin molding. It can be said that the side wall 870 (unit side wall) surrounds the sealing resin 860.
  • the sealing resin 860 seals the first wiring 31, the second wiring 32, the third wiring 33, the side light emitting element 40, the top light emitting element 50, and the wires W1 and W2.
  • the sealing resin 860 is made of a translucent material.
  • the sealing resin 860 is formed of a material containing at least one of silicone resin, epoxy resin, and acrylic resin.
  • the sealing resin 860 is formed by, for example, transfer molding or compression molding. Note that the sealing resin 860 may be filled in a space surrounded by the substrate 820 and the unit side walls of the side walls 870 by potting.
  • the sealing resin 860 includes the diffusion material 67 (see FIG. 11).
  • both the side wall 870 and the substrate 820 are cut along the cutting line CL in FIG. 10 by a dicing blade.
  • the substrate 20, side walls 70, and sealing resin 60 are formed.
  • the side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 that emits laser light emits the laser light toward the first sealing end surface 63 of the sealing resin 60. That is, the side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 faces the same side as the first sealed end surface 63.
  • the order of the manufacturing steps of the semiconductor light emitting device 10 can be changed arbitrarily.
  • the side wall 870 is formed on the substrate 820.
  • a process may be performed.
  • the side wall 870 which is a molded product previously formed by resin molding such as injection molding, may be attached onto the substrate 820 using, for example, an adhesive.
  • a step of forming the sealing resin 860 and a step of dividing into pieces are performed in this order.
  • the semiconductor light emitting device 10 includes a side light emitting element 40 that emits laser light in a direction intersecting the thickness direction of the substrate 20, and a top light emitting element 50 that emits laser light in the thickness direction of the substrate 20. Equipped with In the first embodiment, the side light emitting element 40 emits laser light in the +Y direction, and the top light emitting element 50 emits laser light in the +Z direction. In this way, the semiconductor light emitting device 10 emits light from two different directions, such as the +Y direction and the +Z direction. Therefore, the semiconductor light emitting device 10 can emit light more widely.
  • the semiconductor light emitting device 10 includes a substrate 20 having a substrate surface 21, a side light emitting element 40 provided on the substrate surface 21 and having a first light emitting side LS1 that emits light, and and a top light emitting element 50 having a light emitting upper surface 53 that is provided and emits light.
  • the side light emitting element 40 is arranged with the first light emitting side surface LS1 facing in a direction intersecting the thickness direction (Z-axis direction) of the substrate 20.
  • the top light emitting element 50 is arranged with the light emitting top surface 53 facing the thickness direction (Z-axis direction) of the substrate 20.
  • the semiconductor light emitting device 10 emits light from both the direction intersecting the thickness direction (Z-axis direction) of the substrate 20 and the thickness direction of the substrate 20. Therefore, the semiconductor light emitting device 10 can emit light more widely.
  • the laser light emitted from the semiconductor laser element has higher directivity than the light emitted from the LED element. Therefore, semiconductor laser devices are generally suitable for applications requiring high directivity. On the contrary, in fields where semiconductor light emitting devices using LED elements as light sources are applied, a wider directivity angle is generally required. For this reason, semiconductor laser elements are generally not suitable for use in semiconductor light-emitting devices that use LED elements as light sources. As described above, it is difficult to achieve both a high output light source and a wide directivity angle.
  • an edge-emitting type laser element as a semiconductor laser element is adopted as the side-emitting element 40.
  • the semiconductor light emitting device 10 further includes the top light emitting element 50, as described above in (1-1), the semiconductor light emitting device 10 By emitting light from both the direction and the thickness direction of the substrate 20, the directivity angle of the light emitted by the semiconductor light emitting device 10 can be widened. Therefore, it is possible to achieve both a high output light source and a wide directivity angle.
  • semiconductor laser devices typically have higher output and lower power consumption than LED devices. Therefore, the semiconductor light emitting device 10 can be applied to a semiconductor light emitting device including an LED element by using the side light emitting element 40, which is a semiconductor laser element having the advantages of high output and low power consumption.
  • the sealing resin 60 includes a diffusing material 67 that diffuses light. According to this configuration, light emitted from the side light emitting element 40 toward the first sealing end surface 63 is diffused (scattered) inside the sealing resin 60 by the diffusing material 67. Light emitted from the top light emitting element 50 toward the sealing surface 61 is diffused (scattered) inside the sealing resin 60 by the diffusing material 67. This allows the semiconductor light emitting device 10 to further widen the directivity angle of the emitted light.
  • the semiconductor light emitting device 10 is provided at a position on the first sealed end surface 63 side with respect to the first light emitting side surface LS1 of the side light emitting element 40, and at least part of the light emitted from the first light emitting side surface LS1 It further includes a first reflecting section 80 that reflects the light.
  • the reflected light is emitted from the first sealing end surface 63 upwardly from the substrate surface 21. Therefore, it is possible to increase the amount of light emitted toward the region above the substrate surface 21.
  • the first light emitting side surface LS1 since light is suppressed from being emitted from the first light emitting side surface LS1 toward a region below the substrate surface 21, for example, when the semiconductor light emitting device 10 is mounted on a circuit board, the first light emitting side surface LS1 It is possible to suppress light from being emitted from the surface toward the surface of the circuit board.
  • the first wiring 31 has a portion (first extension portion 31C) extending from the first light emitting side surface LS1 toward the first sealing end surface 63 in plan view as the first reflection portion 80.
  • the first reflecting section 80 can be configured without adding any parts dedicated to the first reflecting section 80, so that an increase in the number of components of the semiconductor light emitting device 10 can be suppressed.
  • the semiconductor light emitting device 10 is formed to surround the side light emitting element 40 and the top light emitting element 50, and further includes a side wall 70 having an opening exposing the first light emitting side surface LS1.
  • the mounter when the mounter holds the semiconductor light emitting device 10 when mounting the semiconductor light emitting device 10 on a circuit board, the external force applied to the sealing resin 60 is reduced by holding the side wall 70. Thereby, the force applied to the wires W1 and W2 sealed in the sealing resin 60 can be reduced.
  • the length of the first extending portion 31C in the X-axis direction is longer than the length of the side light emitting element 40 in the X-axis direction. According to this configuration, more of the light traveling from the first light emitting side surface LS1 toward the substrate surface 21 can be reflected by the first extension portion 31C. Therefore, for example, when the semiconductor light emitting device 10 is mounted on a circuit board, it is possible to further suppress light from being emitted from the first light emitting side surface LS1 toward the surface of the circuit board.
  • the wire W1 is formed so that the bonding portion with the third wiring 33 is the first bonding, and the bonding portion with the anode electrode 47 of the side light emitting element 40 is the second bonding.
  • the wire W2 is formed such that the bonding portion with the third wiring 33 is the first bonding, and the bonding portion with the anode electrode 54 of the top light emitting element 50 is the second bonding.
  • the height (maximum height) of each of the wires W1, W2 from the substrate surface 21 can be reduced, in other words, the height of the wires W1, W2 from the substrate surface 21 in the Z-axis direction can be reduced. Since the distance between them can be reduced, the height of the semiconductor light emitting device 10 can be reduced.
  • the blending ratio of the diffusion material 67 to the sealing resin 60 is selected to be greater than 0% and less than 60%. According to this configuration, by selecting the blending ratio of the diffusing material 67 in a range of greater than 0% and less than or equal to 60%, it is possible to suppress a decrease in the output of light emitted from the semiconductor light emitting device 10 and to increase the directivity angle. Can be expanded.
  • the blending ratio of the diffusion material 67 to the sealing resin 60 is selected within the range of 20% to 60%. According to this configuration, by selecting the blending ratio of the diffusing material 67 in the range of 20% to 60%, a decrease in the output of light emitted from the semiconductor light emitting device 10 and a large decrease in the radiation intensity are suppressed. At the same time, the directivity angle can be expanded.
  • the semiconductor light emitting device 10 of the second embodiment will be described with reference to FIGS. 12 to 16.
  • the semiconductor light emitting device 10 of the second embodiment is different from the semiconductor light emitting device 10 of the first embodiment in that the side wall 70 (see FIG. 2) is omitted, and the laser light emission configuration of the side light emitting element 40 is different from the semiconductor light emitting device 10 of the first embodiment. are mainly different.
  • points different from the first embodiment will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor light emitting device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 12, the diffusing material 67 is omitted for easy understanding of the drawing.
  • FIG. 12 schematically shows the planar structure of the semiconductor light emitting device 10 of the second embodiment.
  • 13 and 14 show a schematic cross-sectional structure of the semiconductor light emitting device 10, which schematically shows a region of light emitted from the semiconductor light emitting device 10.
  • the sealing resin 60 is formed to be larger than in the first embodiment. More specifically, in plan view, the first to fourth sealing end surfaces 63 to 66 of the sealing resin 60 are arranged at the same positions as the first to fourth substrate side surfaces 23 to 26 of the corresponding substrate 20. . That is, the first sealed end surface 63 and the first substrate side surface 23 are flush with each other, the second sealed end surface 64 and the second substrate side surface 24 are flush with each other, and the third sealed end surface 65 and the third substrate side surface 24 are flush with each other. It is flush with the side surface 25, and flush with the fourth sealing end surface 66 and the fourth substrate side surface 26. Therefore, it can be said that the sealing resin 60 covers the entire substrate surface 21 of the substrate 20.
  • the first to fourth sealing end surfaces 63 to 66 are dicing surfaces subjected to dicing processing. In this case, cutting marks are formed on the first to fourth sealing end surfaces 63 to 66 by the dicing process.
  • the first to fourth sealing end surfaces 63 to 66 may be rougher than the sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of each of the first to fourth sealing end surfaces 63 to 66 may be larger than the arithmetic mean roughness (Ra) of the sealing surface 61.
  • the directivity angle of the laser light emitted from the semiconductor light emitting device 10 can be widened. Further, since the laser light emitted from the second light emitting side surface LS2 is scattered when passing through the second sealed end surface 64, the directivity angle of the laser light emitted from the semiconductor light emitting device 10 can be widened.
  • the size of the substrate 20 in the X-axis direction and the Y-axis direction in plan view may be reduced by the amount that the side wall 70 is omitted. According to this configuration, the semiconductor light emitting device 10 can be downsized.
  • the output of the first laser beam emitted in the +Y direction from the first light emitting side LS1 and the output of the second laser beam emitted in the -Y direction from the second light emitting side LS2 are both is a laser beam with a predetermined output or more. That is, in the second embodiment, unlike the first embodiment, sufficient output laser light is emitted from both the first light emitting side surface LS1 and the second light emitting side surface LS2.
  • the side light emitting element 40 is configured such that the output of the first laser beam and the output of the second laser beam are equal to each other. Note that the output of the first laser beam and the output of the second laser beam may be different from each other within a range of a predetermined output or more.
  • the semiconductor light emitting device 10 includes a second reflection section 90 that reflects a portion of the second laser light emitted from the second light emitting side surface LS2.
  • the second reflection section 90 is provided so as to reflect at least a portion of the laser light directed toward the substrate surface 21 out of the second laser light emitted from the second light emitting side surface LS2.
  • the second reflecting section 90 includes the second wiring 32. More specifically, in plan view, a region of the second wiring 32 that is different from the top light emitting element 50 constitutes the second reflection section 90.
  • the second laser beam of the side light emitting element 40 is diffused (scattered) by the diffusion material 67.
  • the second laser light includes laser light directed toward the substrate surface 21.
  • the second wiring 32 reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the second sealing end face 64 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 .
  • FIGS. 15 and 16 show a configuration in which four semiconductor light emitting devices 10 can be manufactured at one time for convenience, the present invention is not limited to this, and the configuration can be configured so that more semiconductor light emitting devices 10 can be manufactured at one time. You can.
  • the method for manufacturing the semiconductor light emitting device 10 includes a step of preparing a substrate 820, a step of mounting the side light emitting element 40 and the top light emitting element 50, a step of forming the wires W1 and W2, and a step of forming the sealing resin 860. and a step of singulating.
  • the process of preparing the substrate 820 is the same as the process of preparing the substrate 820 of the first embodiment.
  • the step of mounting the side light emitting element 40 and the top light emitting element 50 is performed in a state where the side wall 870 (see FIG. 9) is not provided on the substrate 820.
  • the step of mounting the side light emitting element 40 and the top light emitting element 50 includes the steps of mounting the side light emitting element 40 on the first wiring 31 and mounting the top light emitting element 50 on the second wiring 32. More specifically, the side light emitting element 40 is die-bonded to the first wiring 31, and the top light emitting element 50 is die-bonded to the second wiring 32. Subsequently, the process of forming wires W1 and W2 is the same as the process of forming wires W1 and W2 of the first embodiment.
  • a frame 880 is first provided on the substrate 820.
  • the frame 880 is formed to surround the four first wirings 31, the four second wirings 32, the four third wirings 33, the four side light emitting elements 40, and the four top light emitting elements 50 in a plan view.
  • the sealing resin 860 is formed by filling the frame 880 with a translucent resin material by, for example, potting.
  • the resin material is made of, for example, a material containing at least one of silicone resin, epoxy resin, and acrylic resin.
  • the sealing resin 860 is made of silicone resin.
  • the sealing resin 860 includes a diffusion material 67 (see FIG. 14).
  • the method for forming the sealing resin 860 is not limited to this, and the sealing resin 860 may be formed on the substrate 820 by resin molding.
  • resin molding include transfer molding and compression molding.
  • both the sealing resin 860 and the substrate 820 are cut along the cutting line CL in FIG. 16 using a dicing blade. As a result, the sealing resin 60 and the substrate 20 (see FIG. 12) are formed. Through the above steps, the semiconductor light emitting device 10 is manufactured.
  • the side light emitting element 40 has a first light emitting side surface LS1 that faces in a first direction (+Y direction) that intersects the thickness direction (Z axis direction) of the substrate 20 as a light emitting side surface; It has a second light emitting side surface LS2 facing in the opposite second direction (-Y direction).
  • the side light emitting element 40 emits light in two different directions, the first direction (+Y direction) and the second direction ( ⁇ Y direction). Therefore, the semiconductor light emitting device 10 can emit light more widely.
  • the semiconductor light emitting device 10 further includes a second reflecting section 90 that reflects a portion of the light emitted from the second light emitting side surface LS2 of the side light emitting element 40.
  • the second reflection section 90 is provided at a position closer to the second wiring 32 with respect to the second light emitting side surface LS2.
  • the reflected light is directed upward from the second reflecting section 90 toward the sealing surface 61 or the second light emitting side surface LS2.
  • the light is emitted from the second sealed end face 64. Therefore, it is possible to increase the amount of laser light emitted toward the region above the second reflecting section 90.
  • the second wiring 32 is arranged at a position closer to the second sealing end surface 64 with respect to the second light emitting side surface LS2 of the side light emitting element 40.
  • the second reflective section 90 is configured by the second wiring 32.
  • the light directed from the second light emitting side surface LS2 toward the substrate surface 21 is reflected by the second reflecting portion 90, the light emitted from the second light emitting side surface LS2 is directed upward from the substrate surface 21.
  • the light is emitted from the second sealing end face 64 or the sealing surface 61. Therefore, it is possible to increase the amount of laser light emitted toward the region above the substrate surface 21.
  • the second light emitting side surface LS2 since light is suppressed from being emitted from the second light emitting side surface LS2 toward a region below the substrate surface 21, for example, when the semiconductor light emitting device 10 is mounted on a circuit board, the second light emitting side surface LS2 It is possible to suppress light from being emitted from the surface toward the surface of the circuit board.
  • a semiconductor light emitting device 10 according to a third embodiment will be described with reference to FIGS. 17 to 21.
  • the semiconductor light emitting device 10 of the third embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in that a plurality of side light emitting elements are provided.
  • points different from the first embodiment will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor light emitting device 10 of the first embodiment, and the explanation thereof will be omitted. Note that in FIG. 17, the diffusing material 67 is omitted for easy understanding of the drawing.
  • the semiconductor light emitting device 10 includes two first interconnects 31P and 31Q instead of the first interconnect 31 (see FIG. 3).
  • the first wiring 31P and the first wiring 31Q are arranged apart from each other in the Y-axis direction.
  • the first wiring 31P and the first wiring 31Q are arranged to face each other with the second wiring 32 in between. That is, the second wiring 32 is arranged between the first wiring 31P and the first wiring 31Q in the Y-axis direction.
  • the first wiring 31P is arranged closer to the first substrate side 23 with respect to the second wiring 32, and the first wiring 31Q is arranged closer to the second substrate side 24 with respect to the second wiring 32.
  • the first wirings 31P and 31Q are formed of a material containing Cu, similar to the first wiring 31.
  • the shapes and sizes of the first wirings 31P and 31Q in plan view are the same.
  • the shape of the first wirings 31P and 31Q in a plan view is a rectangular shape whose longitudinal direction is in the Y-axis direction and whose transverse direction is in the X-axis direction.
  • the shape and size of the first wirings 31P and 31Q in plan view are the same as, for example, the first wiring 31 of the first embodiment.
  • the semiconductor light emitting device 10 includes two first electrodes 34P and 34Q instead of the first electrode 34 (see FIG. 4).
  • the first electrode 34P and the first electrode 34Q are arranged apart from each other in the Y-axis direction.
  • the first electrode 34P and the first electrode 34Q are arranged to face each other with the second electrode 35 in between. That is, the second electrode 35 is arranged between the first electrode 34P and the first electrode 34Q in the Y-axis direction.
  • the first electrode 34P is arranged closer to the first substrate side surface 23 with respect to the second electrode 35, and the first electrode 34Q is arranged closer to the second substrate side surface 24 with respect to the second electrode 35.
  • the first electrode 34P is arranged at a position overlapping with the first wiring 31P (see FIG. 18), and the first electrode 34Q is arranged at a position overlapping with the first wiring 31Q (see FIG. 18).
  • the first electrodes 34P, 34Q are formed of a material containing Cu, similar to the first electrode 34.
  • the shapes and sizes of the first electrodes 34P and 34Q in plan view are the same.
  • the shape of the first electrodes 34P and 34Q in a plan view is a rectangular shape whose longitudinal direction is in the Y-axis direction and whose transverse direction is in the X-axis direction.
  • the shape and size of the first electrodes 34P and 34Q in plan view are, for example, similar to the first electrode 34 of the first embodiment.
  • the semiconductor light emitting device 10 includes first vias 37P and 37Q instead of the first via 37 (see FIG. 3).
  • first vias 37P and 37Q instead of the first via 37 (see FIG. 3).
  • a plurality of first vias 37P and a plurality of first vias 37Q are provided.
  • each first via 37P electrically connects the first wiring 31P and the first electrode 34P.
  • Each first via 37P is arranged at a position overlapping both the first wiring 31P and the first electrode 34P in plan view.
  • the plurality of first vias 37P are arranged to be spaced apart from each other in both the X-axis direction and the Y-axis direction.
  • Each first via 37P penetrates the substrate 20 in the Z-axis direction.
  • Each first via 37P is in contact with both the first wiring 31P and the first electrode 34P.
  • Each first via 37Q electrically connects the first wiring 31Q and the first electrode 34Q.
  • Each first via 37Q is arranged at a position overlapping both the first wiring 31Q and the first electrode 34Q in plan view.
  • the plurality of first vias 37Q are spaced apart from each other in both the X-axis direction and the Y-axis direction.
  • Each first via 37Q penetrates the substrate 20 in the Z-axis direction.
  • Each first via 37Q is in contact with both the first wiring 31P and the first electrode 34Q.
  • the number of each of the first vias 37P and the second vias 37Q can be changed arbitrarily. In one example, there may be one first via 37P. There may be one second via 37Q. Further, the number of each of the second vias 38 and the third vias 39 can be changed arbitrarily as in the first embodiment.
  • the first side light emitting element 40A is mounted on the first wiring 31P.
  • the first side light emitting element 40A is mounted on the first wiring 31P. More specifically, the first side light emitting element 40A is bonded to the first wiring 31P using a conductive bonding material SD such as solder paste or silver paste.
  • the second side light emitting element 40B is mounted on the first wiring 31Q. In the third embodiment, the second side light emitting element 40B is mounted on the first wiring 31Q. More specifically, the second side light emitting element 40B is bonded to the first wiring 31Q using a conductive bonding material SD such as solder paste or silver paste.
  • Each of the first side light emitting element 40A and the second side light emitting element 40B is a semiconductor laser element that emits light in a predetermined wavelength band, and functions as a light source of the semiconductor light emitting device 10.
  • Each of the first side light emitting element 40A and the second side light emitting element 40B is an edge emitting type laser element.
  • the configuration of each of the first side light emitting element 40A and the second side light emitting element 40B as edge emitting type laser elements is not particularly limited, in the third embodiment, a Fabry-Perot type laser diode element is employed.
  • Each of the first side light emitting element 40A and the second side light emitting element 40B has, for example, the same shape and size as the side light emitting element 40 of the first embodiment.
  • the configurations of the first side light emitting element 40A and the second side light emitting element 40B are the same as the configuration of the side light emitting element 40 of the first embodiment. Therefore, components of the first side light emitting element 40A and the second side light emitting element 40B that are common to the side light emitting element 40 are given the same reference numerals. However, regarding the light emitting side, different symbols are attached to the first side light emitting element 40A and the second side light emitting element 40B.
  • the cathode electrode 48 of the first side light emitting element 40A is electrically connected to the first wiring 31P. Therefore, the cathode electrode 48 of the first side light emitting element 40A is electrically connected to the first electrode 34P.
  • the cathode electrode 48 of the second side light emitting element 40B is electrically connected to the first wiring 31Q. Therefore, the cathode electrode 48 of the second side light emitting element 40B is electrically connected to the first electrode 34Q.
  • the first side light emitting element 40A and the second side light emitting element 40B are arranged apart from each other in the Y-axis direction.
  • the first side light emitting element 40A is arranged closer to the first sealing end surface 63 (first substrate side surface 23) than the top light emitting element 50
  • the second side light emitting element 40B is disposed closer to the second sealing end surface 64 than the top light emitting element 50.
  • the second substrate side surface 24 is arranged closer to the second substrate side surface 24. That is, when viewed from the X-axis direction, the top light emitting element 50 is arranged between the first side light emitting element 40A and the second side light emitting element 40B.
  • the first side light emitting element 40A has a first light emitting side surface LS1 and a second light emitting side surface LS2.
  • the first light emitting side surface LS1 is formed on the first element side surface 43 of the first side light emitting element 40A
  • the second light emitting side surface LS2 is formed on the second element side surface 44 of the first side light emitting element 40A.
  • the first side light emitting element 40A is arranged such that the first light emitting side surface LS1 faces the first substrate side surface 23 side, and the second light emitting side surface LS2 faces the second substrate side surface 24 side.
  • the first side light emitting element 40A is arranged to emit laser light in the +Y direction (first direction). More specifically, the first side light emitting element 40A is configured to emit laser light in the +Y direction from the first light emitting side LS1 and to emit laser light in the ⁇ Y direction from the second light emitting side LS2.
  • the output of the laser light emitted from the first light emitting side LS1 and the output of the laser light emitted from the second light emitting side LS2 are different from each other.
  • the ratio of the output of the laser light emitted from the first light emitting side LS1 and the output of the laser light emitted from the second light emitting side LS2 is, for example, 9:1.
  • the first side light emitting element 40A is arranged to emit light from the first light emitting side surface LS1 in the +Y direction (first direction).
  • the configuration for adjusting the output of laser light is the same as in the first embodiment.
  • the second side light emitting element 40B has a third light emitting side LS3 and a fourth light emitting side LS4.
  • the third light emitting side surface LS3 is formed on the first element side surface 43 of the second side light emitting element 40B
  • the fourth light emitting side surface LS4 is formed on the second element side surface 44 of the second side light emitting element 40B.
  • the second side light emitting element 40B is arranged such that the third light emitting side surface LS3 faces the first substrate side surface 23 side, and the fourth light emitting side surface LS4 faces the second substrate side surface 24 side.
  • the first side light emitting element 40A and the second side light emitting element 40B are arranged side by side with the second light emitting side LS2 and the third light emitting side LS3 facing each other with a gap in between in plan view.
  • the second light emitting side surface LS2 and the third light emitting side surface LS3 face each other with the top light emitting element 50 interposed therebetween when viewed from the X-axis direction.
  • the X-axis direction can be said to be a direction orthogonal to both the thickness direction (Z-axis direction) and the first direction (+Y direction) of the substrate 20.
  • the second side light emitting element 40B is arranged to emit laser light in the ⁇ Y direction (second direction). More specifically, the second side light emitting element 40B is configured to emit laser light in the +Y direction from the third light emitting side LS3, and to emit laser light in the ⁇ Y direction from the fourth light emitting side LS4.
  • the output of the laser light emitted from the third light emitting side LS3 and the output of the laser light emitted from the fourth light emitting side LS4 are different from each other.
  • the ratio of the output of the laser light emitted from the third light emitting side LS3 and the output of the laser light emitted from the fourth light emitting side LS4 is, for example, 1:9.
  • the second side light emitting element 40B is configured to emit light from the fourth light emitting side LS4 in the ⁇ Y direction (second direction).
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the third light emitting side surface LS3 and the fourth light emitting side surface LS4.
  • the reflectance of the reflective film formed on the fourth light emitting side LS4 is set to be lower than the reflectance of the reflective film formed on the third light emitting side LS3.
  • the output of the laser light emitted from the first light emitting side LS1 of the first side light emitting element 40A is the same as the output of the laser light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B. It is. Further, the wavelength of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A is the same as the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B.
  • At least one of the wavelength and output of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A and the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B are different from each other. Good too.
  • the semiconductor light emitting device 10 electrically connects the wire WA1 that electrically connects the anode electrode 47 of the first side light emitting element 40A and the third wiring 33, and the anode electrode 47 of the second side light emitting element 40B and the third wiring 33. and a wire WB1 that is connected to the terminal.
  • the wires WA1 and WB1 are made of, for example, the same material as the wire W1 of the first embodiment. Since the third wiring 33 is connected to the anode electrode 54 of the top light emitting element 50 by the wire W2, the third wiring 33 is connected to the anode electrode 47 of the first side light emitting element 40A and the anode electrode 47 of the second side light emitting element 40B.
  • the third electrode 36 electrically connected to the third wiring 33 is connected to the anode electrode 47 of the first side light emitting element 40A, the anode electrode 47 of the second side light emitting element 40B, and the anode electrode of the top light emitting element 50. It is configured as a common external electrode with the electrode 54.
  • the first sealing end surface 63 is spaced apart in the +Y direction with respect to the first light emitting side surface LS1 of the first side light emitting element 40A. It is arranged as follows.
  • the second sealed end surface 64 is spaced apart from the second light emitting side surface LS2 of the second side light emitting element 40B in the ⁇ Y direction.
  • each of the first sealed end surface 63 and the second sealed end surface 64 is a dicing surface subjected to dicing processing. In this case, cutting marks are formed on each of the first sealed end surface 63 and the second sealed end surface 64 by the dicing process.
  • each of the first sealed end surface 63 and the second sealed end surface 64 may be rougher than the sealed surface 61. Therefore, the arithmetic mean roughness (Ra) of each of the first sealed end surface 63 and the second sealed end surface 64 may be larger than the arithmetic mean roughness (Ra) of the sealed surface 61.
  • the laser light emitted from the first light emitting side surface LS1 is scattered when passing through the first sealed end surface 63, and the laser light emitted from the second light emitting side surface LS2 is scattered when passing through the second sealed end surface 64. Since the laser light is scattered, the directivity angle of the laser light emitted from the semiconductor light emitting device 10 can be widened.
  • the area of the first wiring 31P is larger than the area of the first side light emitting element 40A.
  • the area of the first wiring 31Q is larger than the area of the second side light emitting element 40B. More specifically, the length of the first wiring 31P in the Y-axis direction is longer than the length of the first side light emitting element 40A in the Y-axis direction. The length of the first wiring 31Q in the Y-axis direction is longer than the length of the second side light emitting element 40B in the Y-axis direction.
  • the first side light emitting element 40A is arranged in a portion of the first wiring 31P closer to the second wiring 32 (second substrate side surface 24). More specifically, the center of the first side light emitting element 40A in the Y-axis direction is located closer to the second interconnect 32 (second substrate side surface 24) than the center of the first interconnect 31P in the Y-axis direction.
  • the first wiring 31P includes a first end surface 31PA and a second end surface 31PB that constitute both end surfaces of the first wiring 31P in the Y-axis direction.
  • the first end surface 31PA is the end surface of the first wiring 31P that is closer to the first substrate side surface 23 of both end surfaces in the Y-axis direction
  • the second end surface 31PB is the end surface of the first wiring 31P that is closer to the first substrate side surface 23 of both end surfaces of the first wiring 31P in the Y-axis direction. This is the end surface closer to the side surface 24 of the second substrate.
  • the first end surface 31PA is located inside the first substrate side surface 23 (closer to the second substrate side surface 24).
  • the first end surface 31PA is closer to the first substrate than the center position in the Y-axis direction between the first substrate side surface 23 and the first element side surface 43 (first light emitting side surface LS1) of the first side light emitting element 40A. It is arranged near the side surface 23.
  • the length of the first wiring 31P in the Y-axis direction is longer than the length of the first side light emitting element 40A in the Y axis direction, so the first wiring 31P is connected to the first light emitting side surface of the first side light emitting element 40A.
  • It includes a first extending portion 31PC that is a portion between LS1 and the first end surface 31PA, and a second extending portion 31PD that is a portion between the second light emitting side surface LS2 and the second end surface 31PB.
  • the first wiring 31P has a first extending portion that is a portion extending from the first element side surface 43 (first light emitting side surface LS1) of the first side light emitting element 40A toward the first sealed end surface 63. It can also be said that it has 31 PCs.
  • the first extending portion 31PC includes a first end surface 31PA.
  • the second extending portion 31PD includes a second end surface 31PB.
  • the distance DP1 between the first element side surface 43 (first light emitting side surface LS1) of the first side light emitting element 40A and the first end surface 31PA of the first wiring 31P in the Y-axis direction is It is larger than the distance DP2 between the element side surface 44 (second light emitting side surface LS2) and the second end surface 31PB of the first wiring 31P in the Y-axis direction.
  • the distance DP1 can be said to be the length of the first extension part 31PC in the Y-axis direction
  • the distance DP2 can also be said to be the length of the second extension part 31PD in the Y-axis direction.
  • the laser light emitted by the first side light emitting element 40A has higher directivity than a light emitting diode (LED).
  • the laser light of the first side light emitting element 40A configured as a Fabry-Perot type laser diode element as in the third embodiment is directed in the +Y direction that is substantially perpendicular to the thickness direction (Z-axis direction) of the substrate 20. is emitted.
  • FIG. 21 shows a schematic cross-sectional structure of the semiconductor light emitting device 10, schematically showing a region of light emitted from the semiconductor light emitting device 10. As shown in FIG. In FIG. 21, areas of light are shown with dots.
  • the laser light from the first side light emitting element 40A is diffused (scattered) by the diffusing material 67.
  • the laser light includes laser light directed toward the substrate surface 21.
  • the first extension portion 31PC reflects at least a portion of the laser light directed toward the substrate surface 21.
  • the reflected laser light passes through the first sealing end face 63 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 .
  • the semiconductor light emitting device 10 can be said to include the first reflecting portion 80P that reflects at least a portion of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A.
  • the first reflection section 80P can reflect at least a portion of the laser light directed toward the substrate surface 21 among the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A.
  • the first extending portion 31PC of the first wiring 31P constitutes the first reflecting portion 80P.
  • the first wiring 31P can be said to have a portion extending from the first light emitting side surface LS1 toward the first sealing end surface 63 as the first reflecting portion 80P.
  • the second side light emitting element 40B is arranged in a portion of the first wiring 31Q closer to the second wiring 32 (first substrate side surface 23). More specifically, the center of the second side light emitting element 40B in the Y-axis direction is located closer to the second interconnect 32 (first substrate side surface 23) than the center of the first interconnect 31Q in the Y-axis direction.
  • the first wiring 31Q includes a first end surface 31QA and a second end surface 31QB that constitute both end surfaces of the first wiring 31Q in the Y-axis direction.
  • the first end surface 31QA is the end surface of the first wiring 31Q in the Y-axis direction that is closer to the second substrate side surface 24, and the second end surface 31QB is the end surface of the first wiring 31Q in the Y-axis direction that is closer to the second substrate side surface 24. This is the end surface closer to the one-board side surface 23.
  • the first end surface 31QA is located inside the second substrate side surface 24 (closer to the first substrate side surface 23).
  • the first end surface 31QA is closer to the second substrate than the center position in the Y-axis direction between the second substrate side surface 24 and the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B. It is arranged near the side surface 24.
  • the first wiring 31Q is connected to the fourth light emitting side surface of the second side light emitting element 40B. It includes a first extending portion 31QC that is a portion between LS4 and the first end surface 31QA, and a second extending portion 31QD that is a portion between the third light emitting side surface LS3 and the second end surface 31QB.
  • the first wiring 31Q has a first extension portion that is a portion extending from the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B toward the second sealed end surface 64. It can also be said that it has 31QC.
  • the first extending portion 31QC includes a first end surface 31QA.
  • the second extending portion 31QD includes a second end surface 31QB.
  • the distance DQ1 in the Y-axis direction between the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B and the first end surface 31QA of the first wiring 31Q is It is larger than the distance DQ2 between the element side surface 43 (third light emitting side surface LS3) and the second end surface 31QB of the first wiring 31Q in the Y-axis direction.
  • the distance DQ1 can be said to be the length of the first extension part 31QC in the Y-axis direction
  • the distance DQ2 can also be said to be the length of the second extension part 31QD in the Y-axis direction.
  • the laser light emitted by the second side light emitting element 40B has higher directivity than a light emitting diode (LED).
  • the laser light from the second side light emitting element 40B configured as a Fabry-Perot type laser diode element as in the third embodiment is emitted in the -Y direction, which is substantially orthogonal to the thickness direction (Z-axis direction) of the substrate 20. It is emitted towards the target.
  • the laser light from the second side light emitting element 40B is diffused (scattered) by the diffusing material 67.
  • the laser light includes laser light directed toward the substrate surface 21.
  • the first extension portion 31QC reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the second sealing end face 64 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 .
  • the semiconductor light emitting device 10 can be said to include the first reflecting section 80Q that reflects at least a portion of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B.
  • the first reflection section 80Q can reflect at least a portion of the laser light directed toward the substrate surface 21 out of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B.
  • the first extending portion 31QC of the first wiring 31Q constitutes the first reflecting portion 80Q.
  • the first wiring 31Q can be said to have a portion extending from the fourth light emitting side surface LS4 toward the second sealing end surface 64 as the first reflecting portion 80Q.
  • the positions of the first end surfaces 31PA and 31QA shown in FIG. 17 in the Y-axis direction can be changed arbitrarily.
  • the first end surface 31PA may be arranged flush with the first substrate side surface 23 in plan view.
  • the position of the first end surface 31PA in the Y-axis direction may be a position that has a length that allows the first extension portion 31PC to reflect at least a portion of the laser beam directed toward the substrate surface 21.
  • the first end surface 31QA may be arranged flush with the second substrate side surface 24 in plan view.
  • the position of the first end surface 31QA in the Y-axis direction may be a position that has a length that allows the first extension portion 31QC to reflect at least a portion of the laser beam directed toward the substrate surface 21.
  • the side light emitting element is provided separately from the first side light emitting element 40A and the first side light emitting element 40A having a first light emitting side LS1 and a second light emitting side LS2 as light emitting sides, and has a first side light emitting side LS1 and a second light emitting side LS2 as light emitting sides.
  • a second side light emitting element 40B having three light emitting sides LS3 and a fourth light emitting side LS4.
  • the first side light emitting element 40A and the second side light emitting element 40B are in a state where the second light emitting side surface LS2 and the third light emitting side surface LS3 are opposed to each other with a gap interposed therebetween when viewed from the thickness direction (Z-axis direction) of the substrate 20. are arranged side by side.
  • the first light emitting side surface LS1 of the first side light emitting element 40A and the fourth light emitting side surface LS4 of the second side light emitting element 40B face different directions. That is, the light emitted from the first light emitting side LS1 and the light emitted from the fourth light emitting side LS4 are in different directions. Therefore, the semiconductor light emitting device 10 can emit light more widely.
  • the semiconductor light emitting device 10 of the fourth embodiment will be described with reference to FIGS. 22 to 24.
  • the semiconductor light emitting device 10 of the fourth embodiment is different from the semiconductor light emitting device 10 of the third embodiment in that the first side light emitting element 40A and the second side light emitting element 40B output laser light, and the second side light emitting element 40B has a configuration that outputs laser light.
  • the main difference is that a reflective part has been added.
  • points different from the third embodiment will be described in detail, and components common to the third embodiment will be denoted by the same reference numerals, and their explanation will be omitted. Note that in FIG. 22, the diffusing material 67 is omitted for easy understanding of the drawing.
  • the first laser light output is emitted from the first light emitting side surface LS1 in the +Y direction
  • the second laser light output is emitted from the second light emitting side surface LS2 in the -Y direction.
  • the output of the laser beam is a laser beam with a predetermined output or more. That is, in the fourth embodiment, unlike the third embodiment, sufficient output laser light is emitted from both the first light emitting side surface LS1 and the second light emitting side surface LS2.
  • the first side light emitting element 40A is configured such that the output of the first laser beam and the output of the second laser beam are equal to each other.
  • the output of the first laser beam and the output of the second laser beam may be different from each other within a range of a predetermined output or more.
  • the output of the first laser beam may be greater than the output of the second laser beam.
  • the output of the first laser beam may be smaller than the output of the second laser beam.
  • the output of the third laser light emitted from the third light emitting side LS3 in the +Y direction and the output of the fourth laser light emitted from the fourth light emitting side LS4 in the -Y direction are both the same.
  • a laser beam with a predetermined output or more is configured such that the output of the third laser beam and the output of the fourth laser beam are equal to each other.
  • the output of the third laser beam and the output of the fourth laser beam may be different from each other within a range of a predetermined output or more. In one example, the output of the third laser beam may be greater than the output of the fourth laser beam. In another example, the output of the third laser beam may be smaller than the output of the fourth laser beam.
  • the semiconductor light emitting device 10 further includes second reflection sections 90P and 90Q.
  • the second reflecting section 90P is configured to reflect at least a portion of the second laser beam.
  • the second reflecting section 90Q is configured to reflect at least a portion of the third laser beam.
  • the second reflection section 90P can reflect at least a portion of the second laser light directed toward the substrate surface 21.
  • the second reflecting section 90Q can reflect at least a portion of the third laser beam directed toward the substrate surface 21.
  • the second reflecting portions 90P and 90Q are configured as parts dedicated to reflecting laser light.
  • the second reflecting portion 90P is provided between the top light emitting element 50 and the second light emitting side surface LS2 of the first side light emitting element 40A in the Y axis direction when viewed from the X axis direction.
  • the second reflecting portion 90P is arranged on the substrate surface 21 closer to the second wiring 32 (closer to the second sealing end surface 64) with respect to the second element side surface 44 (second light emitting side surface LS2) of the first side light emitting element 40A. has been done.
  • the second reflective section 90P is arranged apart from both the first wiring 31P and the second wiring 32.
  • the second reflective portion 90P is arranged between the first wiring 31P and the second wiring 32 in the Y-axis direction.
  • the second reflecting section 90P is mounted on the substrate surface 21. More specifically, the second reflective section 90P is bonded to the substrate surface 21 with an adhesive (not shown).
  • the second reflecting section 90P corresponds to the "first inner reflecting section".
  • the second reflecting section 90Q is arranged between the top light emitting element 50 and the third light emitting side surface LS3 of the second side light emitting element 40B in the Y axis direction when viewed from the X axis direction.
  • the second reflecting section 90Q is arranged on the substrate surface 21 closer to the second wiring 32 (closer to the first sealing end surface 63) with respect to the first element side surface 43 (third light emitting side surface LS3) of the second side light emitting element 40B. has been done.
  • the second reflective section 90Q is arranged apart from both the first wiring 31Q and the second wiring 32.
  • the second reflective portion 90Q is arranged between the first wiring 31Q and the second wiring 32 in the Y-axis direction.
  • the second reflecting section 90Q is mounted on the substrate surface 21. More specifically, the second reflective section 90Q is bonded to the substrate surface 21 with an adhesive (not shown).
  • the second reflecting section 90Q corresponds to a "second inner reflecting section.”
  • the second reflecting portions 90P and 90Q may be bonded to the substrate surface 21 using a conductive bonding material SD (see FIG. 23) instead of the adhesive.
  • the second reflective section 90P may be mounted on the first wiring 31. Further, the second reflecting section 90Q may be mounted on the second wiring 32.
  • the arrangement positions of the second reflecting sections 90P and 90Q can be changed arbitrarily.
  • the second reflective section 90P may be arranged on the first wiring 31P.
  • the second extending portion 31PD of the first wiring 31P may extend in the Y-axis direction by an amount corresponding to the arrangement space of the second reflecting portion 90P.
  • the second reflective section 90P may be arranged on the second wiring 32.
  • the second wiring 32 may extend in the Y-axis direction by the space for arranging the second reflection section 90P.
  • the second reflective section 90Q may be arranged on the first wiring 31Q.
  • the second extending portion 31QD of the first wiring 31Q may extend in the Y-axis direction by the space for arranging the second reflecting portion 90Q.
  • the second reflective section 90Q may be arranged on the second wiring 32.
  • the second wiring 32 may extend in the Y-axis direction by the space for arranging the second reflection section 90Q.
  • the semiconductor light emitting device 10 includes a reflector 91 as the second reflecting portions 90P and 90Q. At least a portion of the reflector 91 is covered with the sealing resin 60.
  • the reflector 91 is made of, for example, a metal material. As the metal material, for example, Al, Cu, or an alloy thereof can be used.
  • the configuration of the reflector 91 can be changed arbitrarily.
  • the reflector 91 may have a structure in which surface plating (reflection film) is formed on the surface of a structure formed of a metal material.
  • the reflector 91 may have a structure in which surface plating (reflection film) is formed on the surface of a structure formed of a resin material.
  • the reflector 91 extends in the X-axis direction.
  • the length of the reflector 91 in the X-axis direction is longer than, for example, the length of the first side light emitting element 40A (second side light emitting element 40B) in the X axis direction.
  • the length of the reflector 91 in the X-axis direction is longer than the length of the first wiring 31 in the X-axis direction, for example.
  • both end surfaces of the reflector 91 in the X-axis direction are in contact with a pair of first side wall portions 71 of the side wall 70. Note that the length of the reflector 91 in the X-axis direction can be changed arbitrarily. In one example, the length of the reflector 91 in the X-axis direction may be equal to the length of the first side light emitting element 40A (second side light emitting element 40B) in the X axis direction.
  • the reflector 91 as the second reflecting portions 90P, 90Q connects a bottom surface 92 facing the substrate surface 21, a side surface 93 extending upward from the bottom surface 92, and connecting the bottom surface 92 and the side surface 93. It has a reflective surface 94.
  • the bottom surface 92 is a surface in contact with the adhesive, and is formed by a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20.
  • the side surface 93 extends upward from the edge of the bottom surface 92 in the Y-axis direction that is closer to the second wiring 32 .
  • the reflective surface 94 connects the edge of the bottom surface 92 in the Y-axis direction that is farther from the second wiring 32 and the upper edge of the side surface 93 .
  • the reflective surface 94 is an inclined surface that slopes upward toward the second wiring 32 .
  • the reflective surface 94 of the reflector 91 as the second reflective portion 90P is an inclined surface that slopes upward as it moves away from the second light emitting side surface LS2 of the first side light emitting element 40A.
  • the reflective surface 94 of the reflector 91 as the second reflective portion 90Q is an inclined surface that slopes upward as it moves away from the third light emitting side surface LS3 of the second side light emitting element 40B.
  • the inclination angle of the reflective surface 94 is set according to the range of laser light emitted from the sealing resin 60. In one example, the angle of inclination of the reflective surface 94 is greater than 0° and less than 45°. Here, the inclination angle of the reflective surface 94 is an acute angle formed by the bottom surface 92 and the reflective surface 94.
  • the height dimension (size in the Z-axis direction) of the side surface 93 is equal to the thickness dimension (size in the Z-axis direction) of the first side light emitting element 40A (second side light emitting element 40B). . Therefore, when viewed from the Y-axis direction, the reflective surface 94 is formed to overlap the entire surface of the second light-emitting side surface LS2 (third light-emitting side surface LS3).
  • FIG. 24 shows a schematic cross-sectional structure of the semiconductor light emitting device 10, schematically showing a region of light emitted from the semiconductor light emitting device 10. As shown in FIG. In FIG. 24, areas of light are shown with dots. Note that the light area marked with dots indicates the outline of the range (angle) from which the light is emitted, and does not indicate the range that the light reaches.
  • the second laser beam emitted from the second light emitting side surface LS2 of the first side light emitting element 40A is diffused (scattered) by the diffusion material 67 of the sealing resin 60.
  • a portion of the second laser beam is directed toward the substrate surface 21.
  • the second reflection section 90P reflects at least a portion of the second laser beam directed toward the substrate surface 21 toward the +Z direction and the ⁇ Y direction (diagonally upper right).
  • the second laser beam is emitted diagonally upward and to the right from the sealing surface 61.
  • the second laser beam is emitted from the sealing surface 61 in a region closer to the second sealing end face 64 than the top light emitting element 50 . That is, as shown in FIG.
  • the second laser beam is diffused (scattered) from the fourth laser beam emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and the second laser beam is transmitted to the sealing surface 61 and the second sealing end surface.
  • Laser light emitted upward from the top light emitting element 50 is diffused (scattered) and emitted toward a region between the light region emitted from the sealing surface 64 and the light region emitted from the sealing surface 61 .
  • the third laser light emitted from the third light-emitting side surface LS3 of the second side light-emitting element 40B is diffused (scattered) by the diffusing material 67. As a result, a part of the third laser light is directed toward the substrate surface 21.
  • the second reflecting portion 90Q reflects at least a part of the third laser light directed toward the substrate surface 21 toward the +Z direction and the +Y direction (diagonally upward and left). As a result, the third laser light is emitted diagonally upward and left from the sealing surface 61. In this case, the third laser light is emitted from the sealing surface 61 in a region closer to the first sealing end surface 63 than the upper surface 50. In other words, as shown in FIG.
  • the third laser light is emitted toward the region between the light region where the first laser light emitted from the first light-emitting side surface LS1 of the first side light-emitting element 40A is diffused (scattered) and emitted from the sealing surface 61 and the first sealing end surface 63, and the light region where the laser light emitted upward from the upper surface light-emitting element 50 is diffused (scattered) and emitted from the sealing surface 61.
  • the semiconductor light emitting device 10 is provided between the second light emitting side surface LS2 of the first side light emitting element 40A and the top light emitting element 50 when viewed from the X-axis direction, and emits light from the second light emitting side surface LS2. between the second reflecting section 90P serving as a first inner reflecting section that reflects at least a portion of the light emitted by the light emitting device, and the third light emitting side surface LS3 of the second side light emitting element 40B and the top light emitting element 50 when viewed from the X-axis direction.
  • the light emitting device further includes a second reflecting portion 90Q as a second inner reflecting portion that is provided in the third light emitting side surface LS3 and reflects at least a portion of the light emitted from the third light emitting side surface LS3.
  • the light emitted from the second light emitting side surface LS2 is reflected by the second reflecting portion 90P, and the light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B is reflected from the upper surface.
  • the light is emitted toward a region between the light emitted from the light emitting upper surface 53 of the light emitting element 50.
  • the light emitted from the third light emitting side surface LS3 is reflected by the second reflecting portion 90Q, and the light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A and the light emitting upper surface of the top light emitting element 50 are reflected.
  • the light is emitted toward a region between the light emitted from the light source 53 and the light emitted from the light source 53 . Therefore, the amount of light emitted toward the region above the substrate surface 21 can be increased, and the semiconductor light emitting device 10 can emit light more widely.
  • the semiconductor light emitting device 10 of the fifth embodiment will be described with reference to FIGS. 25 to 27.
  • the semiconductor light emitting device 10 of the fifth embodiment differs from the semiconductor light emitting device 10 of the fourth embodiment mainly in the arrangement of the second side light emitting element 40B and the omission of the side wall 70.
  • points different from the fourth embodiment will be described in detail, and constituent elements common to the fourth embodiment will be denoted by the same reference numerals, and their explanation will be omitted. Note that in FIG. 25, the diffusing material 67 is omitted for easy understanding of the drawing.
  • the sealing resin 60 is formed to be larger than in the first embodiment. More specifically, in plan view, the first to fourth sealing end surfaces 63 to 66 of the sealing resin 60 are arranged at the same positions as the first to fourth substrate side surfaces 23 to 26 of the corresponding substrate 20. . It can be said that the sealing resin 60 covers the entire substrate surface 21 of the substrate 20.
  • the first sealed end surface 63 and the first substrate side surface 23 are flush with each other, the second sealed end surface 64 and the second substrate side surface 24 are flush with each other, and the third sealed end surface 65 and the second sealed end surface 65 are flush with each other.
  • the third substrate side surface 25 is flush with the fourth substrate side surface 25, and the fourth sealed end surface 66 and the fourth substrate side surface 26 are flush with each other.
  • the first side light emitting element 40A and the second side light emitting element 40B are arranged in such a manner that the direction in which the first light emitting side surface LS1 of the first side light emitting element 40A faces and the third light emitting element of the second side light emitting element 40B in plan view. They are arranged so that the directions of the side surfaces LS3 intersect with each other.
  • the arrangement direction of the first light emitting side surface LS1 and the second light emitting side surface LS2 is different from the arrangement direction of the third light emitting side surface LS3 and the fourth light emitting side surface LS4. It can also be said that they are arranged so as to cross each other.
  • the third light emitting side surface LS3 and the fourth light emitting side surface LS4 are arranged to be spaced apart from each other in the X-axis direction. That is, in the fifth embodiment, the X-axis direction is the arrangement direction of the third light-emitting side surface LS3 and the fourth light-emitting side surface LS4.
  • the first side light emitting element 40A is arranged such that the Y-axis direction is the arrangement direction of the first light emitting side surface LS1 and the second light emitting side surface LS2 in plan view.
  • the arrangement direction of the third light emitting side LS3 and the fourth light emitting side LS4 is the same as the first light emitting side LS1 and the fourth light emitting side LS4 of the first side light emitting element 40A. It is arranged so as to be orthogonal to the arrangement direction of the two light-emitting side surfaces LS2.
  • the first sealing end surface 63 is spaced apart in the +Y direction with respect to the first light emitting side surface LS1 of the first side light emitting element 40A. It is arranged as follows.
  • the second sealed end surface 64 is spaced apart from the second light emitting side surface LS2 of the first side light emitting element 40A in the ⁇ Y direction.
  • the third sealed end surface 65 is spaced apart from the third light emitting side surface LS3 of the second side light emitting element 40B in the +X direction.
  • the fourth sealed end surface 66 is spaced apart from the fourth light emitting side surface LS4 of the second side light emitting element 40B in the ⁇ X direction.
  • each of the first to fourth sealing end surfaces 63 to 66 is a dicing surface processed by dicing.
  • cutting marks are formed on each of the first to fourth sealing end surfaces 63 to 66 by the dicing process.
  • each of the first to fourth sealing end surfaces 63 to 66 may be rougher than the sealing surface 61. Therefore, the arithmetic mean roughness (Ra) of each of the first to fourth sealing end surfaces 63 to 66 may be larger than the arithmetic mean roughness (Ra) of the sealing surface 61.
  • the orientation of the first wiring 31Q is different from the first wiring 31Q of the fourth embodiment. More specifically, the first wiring 31Q is arranged such that its first end surface 31QA and second end surface 31QB are arranged in a spaced manner from each other in the X-axis direction.
  • the first wiring 31Q has a rectangular shape with the X-axis direction being the longitudinal direction and the Y-axis direction being the lateral direction.
  • the length of the first wiring 31Q in the X-axis direction is longer than the length of the second side light emitting element 40B in the X-axis direction. Note that the length of the first wiring 31Q in the X-axis direction may be longer than the length of the first wiring 31P in the Y-axis direction.
  • the second side light emitting element 40B is arranged at the center of the first wiring 31Q in the X-axis direction. That is, the distance DQ2, which is the distance in the X-axis direction between the first element side surface 43 (third light emitting side surface LS3) of the second side light emitting element 40B and the first end surface 31QA of the first wiring 31Q, and the second side light emitting The distance DQ1, which is the distance between the second element side surface 44 (fourth light emitting side surface LS4) of the element 40B and the second end surface 31QB of the first wiring 31Q in the X-axis direction, is equal to each other.
  • the difference between distance DQ1 and distance DQ2 is, for example, within 10% of distance DQ1, it can be said that distance DQ1 and distance DQ2 are equal to each other.
  • the first wiring 31Q has a first extending portion that is a portion extending from the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B toward the fourth sealed end surface 66. It can also be said that it has 31QC.
  • the first extending portion 31QC includes a first end surface 31QA.
  • the first wiring 31Q has a second extending portion 31QD that is a portion extending from the first element side surface 43 (third light emitting side surface LS3) of the second side light emitting element 40B toward the third sealing end surface 65. It can also be said that it has.
  • the second extending portion 31QD includes a second end surface 31QB.
  • the first extending portion 31QC constitutes the first reflecting portion 80Q
  • the second extending portion 31QD constitutes the second reflecting portion 90Q.
  • the reflector 91 arranged between the second wiring 32 and the first wiring 31Q in the Y-axis direction may be omitted.
  • the first wiring 31Q may be brought closer to the second wiring 32 by the dimension of the reflector 91 in the Y-axis direction.
  • the semiconductor light emitting device 10 can be made smaller.
  • FIGS. 26 and 27 show a schematic cross-sectional structure of the semiconductor light emitting device 10, which schematically shows a region of light emitted from the semiconductor light emitting device 10.
  • the third light emitting side surface LS3 faces the third substrate side surface 25 (third sealing end surface 65), and the fourth light emitting side surface LS4 faces the fourth substrate side surface 26 ( It is arranged so as to face the fourth sealing end surface 66) side. Therefore, the third laser beam is emitted from the third light emitting side surface LS3 in the +X direction, and the fourth laser beam is emitted from the fourth light emitting side surface LS4 in the ⁇ X direction.
  • the fourth laser beam emitted from the fourth light emitting side surface LS4 is diffused (scattered) by the diffusion material 67. Therefore, a portion of the fourth laser beam is directed toward the substrate surface 21 (see FIG. 25). At least a portion of the fourth laser beam directed toward the substrate surface 21 is reflected at the first extending portion 31QC as the first reflecting portion 80Q. The reflected laser light is emitted from the fourth sealing end face 66.
  • the third laser beam emitted from the third light emitting side surface LS3 is diffused (scattered) by the diffusion material 67. Therefore, a portion of the third laser beam is directed toward the substrate surface 21. At least a portion of the third laser beam directed toward the substrate surface 21 is reflected at the second extending portion 31QD as the second reflecting portion 90Q. The reflected laser light is emitted from the third sealing end face 65.
  • the emission mode of the first laser beam emitted from the first light emitting side LS1 and the second laser beam emitted from the second light emitting side LS2 of the first side light emitting element 40A is the same as that of the fourth embodiment. It is similar to Furthermore, the manner in which the laser light is emitted from the top light emitting element 50 is the same as that in the fourth embodiment (third embodiment). Therefore, at least a portion of the second laser beam emitted from the second light-emitting side surface LS2 is reflected by the reflector 91 of the second reflection section 90P. The second laser beam reflected by the second reflection section 90P is emitted upward as it goes toward the second sealing end surface 64.
  • the second reflecting section 90P corresponds to a "reflecting section".
  • the first side light emitting element 40A is arranged so as to emit light from the first light emitting side LS1 in a first direction (+Y direction) intersecting the thickness direction (Z axis direction) of the substrate 20. There is.
  • the top light emitting element 50 is arranged between the first side light emitting element 40A and the second side light emitting element 40B when viewed from the X-axis direction.
  • the direction in which the first light emitting side surface LS1 faces and the direction in which the third light emitting side face LS3 faces intersect with each other when viewed from the thickness direction (Z direction) of the substrate 20. It is arranged so that The first side light emitting element 40A is configured to emit light from the second light emitting side LS2 in a direction opposite to the first direction. The second side light emitting element 40B is configured to emit light from the third light emitting side LS3 facing in the opposite direction to the direction the fourth light emitting side LS4 faces.
  • the semiconductor light emitting device 10 can emit light more widely.
  • the top light emitting element 50 is arranged to face the second light emitting side surface LS2 of the first side light emitting element 40A.
  • the semiconductor light emitting device 10 is provided between the second light emitting side surface LS2 and the top light emitting element 50 when viewed from the X-axis direction, and serves as a reflecting section that reflects at least a portion of the light emitted from the second light emitting side surface LS2. It further includes a second reflecting section 90P.
  • the light emitted from the second light emitting side surface LS2 is reflected by the second reflecting portion 90P, and is directed toward the semiconductor light emitting device 10 in a direction different from the light emitted from the light emitting upper surface 53 of the top light emitting element 50. It is emitted to the outside. Therefore, it is possible to increase the amount of light emitted toward the region above the substrate surface 21.
  • the semiconductor light emitting device 10 includes a first reflecting portion 80Q that reflects at least a part of the light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B, and a part of the light emitted from the third light emitting side LS3. and a second reflecting section 90Q that reflects at least a portion of the light.
  • the light emitted from the fourth light emitting side surface LS4 is reflected by the first reflecting section 80Q, and is emitted from the fourth sealing end surface 66 in a direction above the first reflecting section 80Q.
  • the light emitted from the third light-emitting side surface LS3 is reflected by the second reflection section 90Q, and is emitted from the third sealed end surface 65 in a direction above the second reflection section 90Q. Therefore, it is possible to increase the amount of light emitted toward the region above the first reflecting section 80Q and the second reflecting section 90Q.
  • the semiconductor light emitting device 10 is mounted on a circuit board. In this case, it is possible to suppress light from being emitted toward the surface of the circuit board from both the third light emitting side surface LS3 and the fourth light emitting side surface LS4.
  • the first wiring 31Q has a first extending portion 31QC which is a portion extending from the fourth light emitting side surface LS4 in the direction toward which the fourth light emitting side surface LS4 faces in plan view as the first reflecting portion 80Q. , a second extending portion 31QD that is a portion extending from the third light emitting side surface LS3 in the direction toward which the third light emitting side surface LS3 faces in plan view as the second reflecting portion 90Q.
  • the first reflecting section 80Q and the second reflecting section 90Q can be configured without adding a component dedicated to the first reflecting section 80Q and a component dedicated to the second reflecting section 90Q. An increase in the number of parts of the device 10 can be suppressed.
  • the semiconductor light emitting device 10 of the sixth embodiment will be described with reference to FIGS. 28 to 34.
  • the semiconductor light emitting device 10 of the sixth embodiment differs from the semiconductor light emitting device 10 of the third embodiment mainly in the number and arrangement of side light emitting elements and in that the side wall 70 is omitted.
  • points different from the third embodiment will be described in detail, and components common to the third embodiment will be denoted by the same reference numerals, and their explanation will be omitted. Note that in FIGS. 28, 31, and 32, the diffusion material 67 is omitted for easy understanding of the drawings.
  • a plurality of side light emitting elements are provided.
  • the plurality of side light emitting elements are arranged around the top light emitting element 50 so that their light emitting sides face in different directions.
  • the plurality of side light emitting elements include a first side light emitting element 40A, a second side light emitting element 40B, a third side light emitting element 40C, and a fourth side light emitting element 40D.
  • the first to fourth side light emitting elements 40A to 40D have the same configuration.
  • the first to fourth side light emitting elements 40A to 40D have the same configuration as the side light emitting element 40 of the first embodiment (see FIG. 2). Therefore, in the first to fourth side light emitting elements 40A to 40D, constituent elements common to the side light emitting element 40 are given the same reference numerals, and their explanations will be omitted.
  • the first to fourth side light emitting elements 40A to 40D are arranged around the top light emitting element 50 in plan view. More specifically, the first to fourth side light emitting elements 40A to 40D are arranged at 90° intervals around the top light emitting element 50 in plan view.
  • the first side light emitting element 40A is arranged closer to the first substrate side surface 23 (first sealed end surface 63) with respect to the top light emitting element 50.
  • the second side light emitting element 40B is arranged closer to the second substrate side surface 24 (second sealed end surface 64) with respect to the top light emitting element 50.
  • the third side light emitting element 40C is arranged closer to the third substrate side surface 25 (third sealed end surface 65) with respect to the top light emitting element 50.
  • the fourth side light emitting element 40D is arranged closer to the fourth substrate side surface 26 (fourth sealed end surface 66) with respect to the top light emitting element 50.
  • the first side light emitting element 40A has a first light emitting side surface LS1 and a second light emitting side surface LS2.
  • the first light emitting side surface LS1 is formed on the first element side surface 43 of the first side light emitting element 40A
  • the second light emitting side surface LS2 is formed on the second element side surface 44 of the first side light emitting element 40A.
  • the first side light emitting element 40A is arranged such that the first light emitting side surface LS1 faces the first substrate side surface 23 (first sealed end surface 63). That is, the first side light emitting element 40A is arranged so as to emit laser light from the first light emitting side surface LS1 in the +Y direction (first direction).
  • the second light emitting side surface LS2 faces the second substrate side surface 24 (second sealing end surface 64).
  • the second light emitting side surface LS2 faces the ⁇ Y direction (second direction). That is, the first side light emitting element 40A is arranged so as to emit laser light from the second light emitting side LS2 in the ⁇ Y direction (second direction).
  • the output of the laser light emitted from the first light-emitting side surface LS1 and the output of the laser light emitted from the second light-emitting side surface LS2 are different from each other.
  • the ratio of the output of the laser light emitted from the first light-emitting side surface LS1 to the output of the laser light emitted from the second light-emitting side surface LS2 is, for example, 9:1.
  • the configuration for adjusting the output of the laser light is the same as in the first embodiment.
  • the second side light emitting element 40B has a third light emitting side LS3 and a fourth light emitting side LS4.
  • the third light emitting side surface LS3 is formed on the first element side surface 43 of the second side light emitting element 40B
  • the fourth light emitting side surface LS4 is formed on the second element side surface 44 of the second side light emitting element 40B.
  • the second side light emitting element 40B is arranged such that the fourth light emitting side surface LS4 faces the second substrate side surface 24 (second sealed end surface 64). That is, the second side light emitting element 40B is arranged so as to emit laser light from the fourth light emitting side LS4 in the ⁇ Y direction (second direction).
  • the third light emitting side surface LS3 faces the first substrate side surface 23 (first sealed end surface 63).
  • the third light emitting side surface LS3 faces the +Y direction (first direction). That is, the second side light emitting element 40B is arranged so as to emit laser light from the third light emitting side LS3 in the +Y direction (first direction).
  • the output of the laser light emitted from the fourth light emitting side LS4 and the output of the laser light emitted from the third light emitting side LS3 are different from each other.
  • the ratio of the output of the laser light emitted from the fourth light emitting side LS4 and the output of the laser light emitted from the third light emitting side LS3 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the third light emitting side surface LS3 and the fourth light emitting side surface LS4.
  • the reflectance of the reflective film formed on the fourth light emitting side LS4 is set to be lower than the reflectance of the reflective film formed on the third light emitting side LS3.
  • the third side light emitting element 40C has a fifth light emitting side LS5 and a sixth light emitting side LS6.
  • the fifth light emitting side surface LS5 is formed on the first element side surface 43 of the third side light emitting element 40C
  • the sixth light emitting side surface LS6 is formed on the second element side surface 44 of the third side light emitting element 40C.
  • the third side light emitting element 40C is arranged such that the fifth light emitting side surface LS5 faces the third substrate side surface 25 (third sealed end surface 65). In other words, the third side light emitting element 40C emits laser light from the fifth light emitting side LS5 in a third direction (+X direction) that is different from both the first direction (+Y direction) and the second direction ( ⁇ Y direction).
  • the sixth light emitting side surface LS6 faces the fourth substrate side surface 26 (fourth sealing end surface 66).
  • the sixth light emitting side surface LS6 is arranged to face the -X direction.
  • the ⁇ X direction corresponds to a fourth direction that is different from each of the first direction, second direction, and third direction in plan view. That is, the third side light emitting element 40C is arranged so that the laser beam is emitted from the sixth light emitting side LS6 in the ⁇ X direction (fourth direction).
  • the output of the laser light emitted from the fifth light emitting side LS5 and the output of the laser light emitted from the sixth light emitting side LS6 are different from each other.
  • the ratio of the output of the laser light emitted from the fifth light emitting side LS5 and the output of the laser light emitted from the sixth light emitting side LS6 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the fifth light emitting side surface LS5 and the sixth light emitting side surface LS6.
  • the reflectance of the reflective film formed on the fifth light emitting side LS5 is set to be lower than the reflectance of the reflective film formed on the sixth light emitting side LS6.
  • the fourth side light emitting element 40D has a seventh light emitting side LS7 and an eighth light emitting side LS8.
  • the seventh light emitting side surface LS7 is formed on the first element side surface 43 of the fourth side light emitting element 40D
  • the eighth light emitting side surface LS8 is formed on the second element side surface 44 of the fourth side light emitting element 40D.
  • the fourth side light emitting element 40D is arranged such that the eighth light emitting side surface LS8 faces the fourth substrate side surface 26 (fourth sealed end surface 66). That is, the fourth side light emitting element 40D is arranged so as to emit laser light from the eighth light emitting side LS8 in the fourth direction (-X direction).
  • the seventh light emitting side surface LS7 faces the third substrate side surface 25 (third sealing end surface 65).
  • the seventh light emitting side surface LS7 faces the third direction (+X direction). That is, the fourth side light emitting element 40D is arranged so as to emit laser light from the seventh light emitting side LS7 in the third direction (+X direction).
  • the output of the laser light emitted from the eighth light emitting side LS8 and the output of the laser light emitted from the seventh light emitting side LS7 are different from each other.
  • the ratio of the output of the laser light emitted from the eighth light emitting side LS8 and the output of the laser light emitted from the seventh light emitting side LS7 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the seventh light-emitting side surface LS7 and the eighth light-emitting side surface LS8.
  • the reflectance of the reflective film formed on the seventh light emitting side LS7 is set to be lower than the reflectance of the reflective film formed on the eighth light emitting side LS8.
  • the output of the laser light emitted from the fifth light emitting side LS5 of the side light emitting element 40C and the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D are equal to each other.
  • the output of the laser light emitted from the fifth light emitting side LS5 and the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D can be individually and arbitrarily changed.
  • the output of the laser light emitted from the fifth light emitting side LS5 of 40C and the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D may be different from each other.
  • One to three of the output of the laser light emitted from the fifth light emitting side LS5 of the element 40C and the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D are different from the remaining ones. You can leave it there.
  • the wavelength of the laser light emitted from the fifth light emitting side LS5 of the side light emitting element 40C is equal to the wavelength of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D.
  • the wavelength of the laser light emitted from the fifth light emitting side LS5 and the wavelength of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D can be individually and arbitrarily changed.
  • the wavelength of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A, the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B are set.
  • the wavelength of the laser light emitted from the fifth light emitting side LS5 of 40C and the wavelength of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D may be different from each other.
  • One to three of the wavelengths of the laser light emitted from the fifth light emitting side LS5 of the element 40C and the wavelengths of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D are different from the remaining wavelengths. You can leave it there.
  • the semiconductor light emitting device 10 includes first wirings 101, 102, 103, and 104 in place of the first wirings 31P and 31Q (see FIG. 17) in the third embodiment, and first wirings 101, 102, 103, and 104 in the third embodiment.
  • first wirings 101, 102, 103, and 104 in place of the third wiring 33 (see FIG. 17)
  • third wirings 111 and 112 are provided in place of the third wiring 33 (see FIG. 17).
  • each of the first wirings 101 to 104 and the third wirings 111 and 112 is formed on the substrate surface 21.
  • the shapes and sizes of the first wirings 101 to 104 are the same. Each of the first wirings 101 to 104 has the same shape and size as the first wirings 31P and 31Q of the third embodiment.
  • the first wirings 101 to 104 are formed of a material containing Cu, similar to the first wirings 31P and 31Q.
  • the first wirings 101 to 104 are arranged around the second wiring 32.
  • the first wirings 101 to 104 are arranged at 90° intervals around the second wiring 32.
  • the first wiring 101 is arranged closer to the first substrate side surface 23 with respect to the second wiring 32.
  • the first wiring 101 is arranged at a position overlapping the second wiring 32 when viewed from the Y-axis direction.
  • the first wiring 101 is arranged so that the Y-axis direction is the longitudinal direction and the X-axis direction is the lateral direction. Note that the shape of the first wiring 101 in plan view can be arbitrarily changed.
  • the first wiring 102 is arranged closer to the second substrate side surface 24 with respect to the second wiring 32.
  • the first wiring 102 is arranged at a position overlapping the second wiring 32 when viewed from the Y-axis direction. Therefore, the first wiring 102 is arranged to face the first wiring 101 via the second wiring 32 in plan view.
  • the first wiring 101, the second wiring 32, and the first wiring 102 are arranged in a line in the Y-axis direction.
  • the first wiring 102 is arranged such that the Y-axis direction is the longitudinal direction and the X-axis direction is the lateral direction. Note that the shape of the first wiring 102 in plan view can be arbitrarily changed.
  • the first wiring 103 is arranged closer to the third substrate side surface 25 with respect to the second wiring 32.
  • the first wiring 103 is arranged at a position overlapping the second wiring 32 when viewed from the X-axis direction.
  • the first wiring 103 is arranged so that the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction. Note that the shape of the first wiring 103 in plan view can be arbitrarily changed.
  • the first wiring 104 is arranged closer to the fourth substrate side surface 26 with respect to the second wiring 32.
  • the first wiring 104 is arranged at a position overlapping the second wiring 32 when viewed from the X-axis direction. Therefore, the first wiring 104 is arranged to face the first wiring 103 via the second wiring 32 in plan view.
  • the first wiring 103, the second wiring 32, and the first wiring 104 are arranged in a line in the X-axis direction.
  • the first wiring 104 is arranged so that the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction. Note that the shape of the first wiring 104 in plan view can be arbitrarily changed.
  • the shapes and sizes of the third wirings 111 and 112 are the same. Each of the shapes and sizes of the third wirings 111 and 112 is the same as the third wiring 33 (see FIG. 17) of the third embodiment.
  • the third wirings 111 and 112 are distributed and arranged on both sides of the second wiring 32 in the Y-axis direction. Note that the shape and size of each of the third wirings 111 and 112 can be changed arbitrarily. In one example, the shape of the third wiring 111 and the shape of the third wiring 112 may be different from each other.
  • the third wiring 111 is arranged closer to the first substrate side surface 23 with respect to the second wiring 32.
  • the third wiring 111 is arranged between the second wiring 32 and the first wiring 101 in the X-axis direction.
  • the third wiring 112 is arranged closer to the second substrate side surface 24 with respect to the second wiring 32.
  • the third wiring 112 is arranged between the second wiring 32 and the first wiring 102 in the X-axis direction.
  • the first wiring 101, the third wiring 111, the second wiring 32, the third wiring 112, and the first wiring 102 are arranged in a line in the X-axis direction.
  • the semiconductor light emitting device 10 includes first electrodes 121, 122, 123, 124 instead of the first electrodes 34P and 34Q of the third embodiment, and a third electrode 36 of the third embodiment. and third electrodes 131 and 132.
  • Each of the first electrodes 121 to 124 and the third electrodes 131 and 132 is formed on the back surface 22 of the substrate.
  • Each of the first electrodes 121 to 124 and the third electrodes 131, 132 is made of a material containing, for example, Cu.
  • the first electrodes 121 to 124 are arranged around the second electrode 35.
  • the first electrodes 121 to 124 are arranged at 90° intervals around the second electrode 35.
  • the first electrode 121 is arranged closer to the first substrate side surface 23 with respect to the second electrode 35. In plan view, the first electrode 121 is arranged at a position overlapping with the first wiring 101 (see FIG. 29).
  • the first electrode 122 is arranged closer to the second substrate side surface 24 with respect to the second electrode 35. In plan view, the first electrode 122 is arranged at a position overlapping with the first wiring 102 (see FIG. 29).
  • the first electrode 123 is arranged closer to the third substrate side surface 25 with respect to the second electrode 35. In plan view, the first electrode 123 is arranged at a position overlapping with the first wiring 103 (see FIG. 29).
  • the first electrode 124 is arranged closer to the fourth substrate side surface 26 with respect to the second electrode 35. In plan view, the first electrode 124 is arranged at a position overlapping with the first wiring 104 (see FIG. 29).
  • the third electrode 131 is arranged closer to the first substrate side surface 23 with respect to the second electrode 35.
  • the third electrode 131 is arranged between the second electrode 35 and the first electrode 121 in the X-axis direction.
  • the third electrode 131 is arranged at a position overlapping with the third wiring 111 (see FIG. 29).
  • the third electrode 132 is arranged closer to the second substrate side surface 24 with respect to the second electrode 35.
  • the third electrode 132 is arranged between the second electrode 35 and the first electrode 122 in the X-axis direction.
  • the third electrode 132 is arranged at a position overlapping with the third wiring 112 (see FIG. 29).
  • the semiconductor light emitting device 10 includes first vias 141, 142, 143, 144 in place of the first vias 37P, 37Q (see FIG. 18) in the third embodiment, and Third vias 151 and 152 are provided in place of the third via 39 in the configuration.
  • Each of the first vias 141 to 144 and the third vias 151, 152 penetrates the substrate 20 in its thickness direction (Z-axis direction).
  • Each of the first vias 141 to 144 and the third vias 151, 152 is formed of a material containing, for example, Cu.
  • the first via 141 electrically connects the first wiring 101 and the first electrode 121.
  • a plurality of first vias 141 are provided.
  • the plurality of first vias 141 are arranged at positions overlapping both the first wiring 101 and the first electrode 121 in a plan view.
  • the number of the plurality of first vias 141 in the longitudinal direction (Y-axis direction) of the first wiring 101 (first electrode 121) is greater than the number in the lateral direction (Y-axis direction) of the first wiring 101 (first electrode 121). (in the X-axis direction).
  • the first via 142 electrically connects the first wiring 102 and the first electrode 122.
  • a plurality of first vias 142 are provided.
  • the plurality of first vias 142 are arranged at positions overlapping both the first wiring 102 and the first electrode 122 in a plan view.
  • the arrangement of the first vias 142 is the same as the arrangement of the first vias 141.
  • the first via 143 electrically connects the first wiring 103 and the first electrode 123.
  • a plurality of first vias 143 are provided.
  • the plurality of first vias 143 are arranged at positions overlapping both the first wiring 103 and the first electrode 123 in a plan view.
  • the number of the plurality of first vias 143 in the longitudinal direction (X-axis direction) of the first wiring 103 (first electrode 123) is greater than the number in the lateral direction (X-axis direction) of the first wiring 103 (first electrode 123). (Y-axis direction).
  • the first via 144 electrically connects the first wiring 104 and the first electrode 124.
  • a plurality of first vias 144 are provided.
  • the plurality of first vias 144 are arranged at positions overlapping both the first wiring 104 and the first electrode 124 in a plan view.
  • the arrangement of the first vias 144 is the same as the arrangement of the first vias 143.
  • each of the first vias 141 to 144 can be changed arbitrarily.
  • the plurality of first vias 141 are arranged such that the number of first interconnects 103 (first electrodes 123) in the lateral direction is greater than or equal to the number of first interconnects 103 (first electrodes 123) in the longitudinal direction. You can leave it there.
  • the plurality of first vias 142, the plurality of first vias 143, and the plurality of first vias 144 can be similarly changed. Further, each of the first vias 141 to 144 may be one.
  • the third via 151 electrically connects the third wiring 111 and the third electrode 131.
  • the third via 151 is arranged at a position overlapping the third wiring 111 and the third electrode 131 in a plan view.
  • the third via 152 electrically connects the third wiring 112 and the third electrode 132.
  • the third via 152 is arranged at a position overlapping the third wiring 112 and the third electrode 132 in a plan view. Note that the number of third vias 151 and 152 can be changed arbitrarily. A plurality of third vias 151 and 152 may be provided.
  • the first side light emitting element 40A is mounted on the first wiring 101. More specifically, the first side light emitting element 40A is bonded to the first wiring 101 using a conductive bonding material (not shown). That is, the first side light emitting element 40A is mounted on the first wiring 101. Thereby, as shown in FIG. 33, the cathode electrode 48 of the first side light emitting element 40A is electrically connected to the first wiring 101. As shown in FIG. 31, the anode electrode 47 of the first side light emitting element 40A is electrically connected to the third wiring 111 by a wire W1a.
  • the first side light emitting element 40A is arranged closer to the second wiring 32 of the first wiring 101. More specifically, the center of the first side light emitting element 40A in the Y-axis direction is located closer to the second interconnect 32 (second substrate side surface 24) than the center of the first interconnect 101 in the Y-axis direction.
  • the first wiring 101 includes a first end surface 101A and a second end surface 101B that constitute both end surfaces of the first wiring 101 in the Y-axis direction.
  • the first end surface 101A is the end surface of the first wiring 101 in the Y-axis direction that is closer to the first substrate side surface 23, and the second end surface 101B is the end surface of the first wiring 101 in the Y-axis direction that is closer to the first substrate side surface 23. This is the end surface closer to the side surface 24 of the second substrate.
  • the first end surface 101A is arranged inside the first substrate side surface 23 (closer to the second substrate side surface 24).
  • the first end surface 101A is located closer to the first substrate than the center position in the Y-axis direction between the first substrate side surface 23 and the first element side surface 43 (first light emitting side surface LS1) of the first side light emitting element 40A. It is arranged near the side surface 23.
  • the distance D1a between the first element side surface 43 (first light emitting side surface LS1) of the first side light emitting element 40A and the first end surface 101A of the first wiring 101 in the Y-axis direction is It is larger than the distance D2a between the element side surface 44 (second light emitting side surface LS2) and the second end surface 101B of the first wiring 101 in the Y-axis direction.
  • the first wiring 101 has a first extension portion that is a portion extending from the first element side surface 43 (first light emitting side surface LS1) of the first side light emitting element 40A toward the first sealed end surface 63. It can also be said that it has 101C.
  • the first extending portion 101C includes a first end surface 101A.
  • the second side light emitting element 40B is mounted on the first wiring 102. More specifically, the second side light emitting element 40B is bonded to the first wiring 102 using a conductive bonding material (not shown). That is, the second side light emitting element 40B is mounted on the first wiring 102. Thereby, as shown in FIG. 33, the cathode electrode 48 of the second side light emitting element 40B is electrically connected to the first wiring 102. As shown in FIG. 31, the anode electrode 47 of the second side light emitting element 40B is electrically connected to the third wiring 112 by a wire W1b.
  • the second side light emitting element 40B is arranged closer to the second wiring 32 of the first wiring 102. More specifically, the center of the second side light emitting element 40B in the Y-axis direction is located closer to the second interconnect 32 (first substrate side surface 23) than the center of the first interconnect 102 in the Y-axis direction.
  • the first wiring 102 includes a first end surface 102A and a second end surface 102B that constitute both end surfaces of the first wiring 102 in the Y-axis direction.
  • the first end surface 102A is the end surface of the first wiring 102 in the Y-axis direction that is closer to the second substrate side surface 24, and the second end surface 102B is the end surface of the first wiring 102 in the Y-axis direction that is closer to the second substrate side surface 24. This is the end surface closer to the one-board side surface 23.
  • the first end surface 102A is arranged inside the second substrate side surface 24 (closer to the first substrate side surface 23).
  • the first end surface 102A is located closer to the second substrate than the center position in the Y-axis direction between the second substrate side surface 24 and the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B. It is arranged near the side surface 24.
  • the distance D1b in the Y-axis direction between the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B and the first end surface 102A of the first wiring 102 is It is larger than the distance D2b between the element side surface 43 (third light emitting side surface LS3) and the second end surface 102B of the first wiring 102 in the Y-axis direction.
  • the first wiring 102 has a first extension portion that is a portion extending from the second element side surface 44 (fourth light emitting side surface LS4) of the second side light emitting element 40B toward the second sealed end surface 64. It can also be said that it has 102C.
  • the first extending portion 102C includes a first end surface 102A.
  • the third side light emitting element 40C is mounted on the first wiring 103. More specifically, the third side light emitting element 40C is bonded to the first wiring 103 using a conductive bonding material (not shown). That is, the third side light emitting element 40C is mounted on the first wiring 103. Thereby, as shown in FIG. 34, the cathode electrode 48 of the third side light emitting element 40C is electrically connected to the first wiring 103. As shown in FIG. 31, the anode electrode 47 of the third side light emitting element 40C is electrically connected to the third wiring 111 by a wire W1c.
  • the third side light emitting element 40C is arranged closer to the second wiring 32 of the first wiring 103. More specifically, the center of the third side light emitting element 40C in the X-axis direction is located closer to the second interconnect 32 (fourth substrate side surface 26) than the center of the first interconnect 103 in the X-axis direction.
  • the first wiring 103 includes a first end surface 103A and a second end surface 103B that constitute both end surfaces of the first wiring 103 in the X-axis direction.
  • the first end surface 103A is the end surface of the first wiring 103 in the X-axis direction that is closer to the third substrate side surface 25, and the second end surface 103B is the end surface of the first wiring 103 in the X-axis direction that is closer to the third substrate side surface 25. 4. This is the end surface closer to the side surface 26 of the substrate.
  • the first end surface 103A is arranged inside the third substrate side surface 25 (closer to the second wiring 32).
  • the first end surface 103A is located closer to the third substrate side than the center in the X-axis direction between the third substrate side 25 and the first element side 43 (fifth light emitting side LS5) of the third side light emitting element 40C in plan view. It is located near 25.
  • the distance D1c in the X-axis direction between the first element side surface 43 (fifth light emitting side surface LS5) of the third side light emitting element 40C and the first end surface 103A of the first wiring 103 is the second side surface of the third side light emitting element 40C. It is larger than the distance D2c between the element side surface 44 (sixth light emitting side surface LS6) and the second end surface 103B of the first wiring 103 in the X-axis direction.
  • the first wiring 103 has a first extending portion that is a portion extending from the first element side surface 43 (fifth light emitting side surface LS5) of the third side light emitting element 40C toward the third sealing end surface 65. It can also be said that it has 103C.
  • the first extending portion 103C includes a first end surface 103A.
  • the fourth side light emitting element 40D is mounted on the first wiring 104. More specifically, the fourth side light emitting element 40D is bonded to the first wiring 104 using a conductive bonding material (not shown). That is, the fourth side light emitting element 40D is mounted on the first wiring 104. Thereby, as shown in FIG. 34, the cathode electrode 48 of the fourth side light emitting element 40D is electrically connected to the first wiring 104. As shown in FIG. 32, the anode electrode 47 of the fourth side light emitting element 40D is electrically connected to the third wiring 112 by a wire W1d.
  • the fourth side light emitting element 40D is arranged closer to the second wiring 32 of the first wiring 104. More specifically, the center of the fourth side light emitting element 40D in the X-axis direction is located closer to the second interconnect 32 (third substrate side surface 25) than the center of the first interconnect 104 in the X-axis direction.
  • the first wiring 104 includes a first end surface 104A and a second end surface 104B that constitute both end surfaces of the first wiring 104 in the X-axis direction.
  • the first end surface 104A is the end surface of the first wiring 104 in the X-axis direction that is closer to the fourth substrate side surface 26, and the second end surface 104B is the end surface of the first wiring 104 in the X-axis direction that is closer to the fourth substrate side surface 26. 3. This is the end surface closer to the side surface 25 of the third substrate.
  • the first end surface 104A is arranged inside the fourth substrate side surface 26 (closer to the second wiring 32).
  • the first end surface 104A is located closer to the fourth substrate than the center position between the fourth substrate side surface 26 and the second element side surface 44 (eighth light emitting side surface LS8) of the fourth side light emitting element 40D in the X-axis direction. It is arranged near the side surface 26.
  • the distance D1d between the second element side surface 44 (eighth light emitting side surface LS8) of the fourth side light emitting element 40D and the first end surface 104A of the first wiring 104 in the X-axis direction is It is larger than the distance D2d between the element side surface 43 (seventh light emitting side surface LS7) and the second end surface 104B of the first wiring 104 in the X-axis direction.
  • the first wiring 104 has a first extension portion that is a portion extending from the second element side surface 44 (eighth light emitting side surface LS8) of the fourth side light emitting element 40D toward the fourth sealed end surface 66. It can also be said that it has 104C.
  • the first extending portion 104C includes a first end surface 104A.
  • FIGS. 33 and 34 show a schematic cross-sectional structure of the semiconductor light emitting device 10, which schematically shows a region of light emitted from the semiconductor light emitting device 10.
  • the laser beams from the first to fourth side light emitting elements 40A to 40D are diffused (scattered) by the diffusing material 67.
  • the laser beams from the first to fourth side light emitting elements 40A to 40D include laser beams directed toward the substrate surface 21.
  • the semiconductor light emitting device 10 includes first reflecting portions 80A to 80D that reflect at least a portion of the laser beams of the first to fourth side light emitting elements 40A to 40D.
  • the first reflecting portions 80A to 80D reflect at least a portion of the laser beams directed toward the substrate surface 21 from the respective laser beams of the first to fourth side light emitting elements 40A to 40D.
  • the first reflecting section 80A is configured to reflect at least a portion of the laser light directed from the first light emitting side surface LS1 of the first side light emitting element 40A toward the substrate surface 21.
  • the first extending portion 101C of the first wiring 101 constitutes the first reflecting portion 80A. In this way, it can be said that the first wiring 101 has a portion extending from the first light emitting side surface LS1 toward the first sealing end surface 63 as the first reflecting portion 80A.
  • the laser light directed from the first light-emitting side surface LS1 toward the substrate surface 21 is reflected by the first extension portion 101C, passes through the first sealing end surface 63 or the sealing surface 61, and is emitted to the outside of the semiconductor light-emitting device 10. be done.
  • the first reflecting section 80B is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the fourth light emitting side surface LS4 of the second side light emitting element 40B.
  • the first extending portion 102C of the first wiring 102 constitutes the first reflecting portion 80B.
  • the first wiring 102 has a portion extending from the fourth light emitting side surface LS4 toward the second sealing end surface 64 as the first reflecting portion 80B.
  • the laser light directed from the fourth light emitting side surface LS4 toward the substrate surface 21 is reflected by the first extension portion 102C, passes through the second sealing end surface 64 or the sealing surface 61, and is emitted to the outside of the semiconductor light emitting device 10. be done.
  • the first reflecting section 80C is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the fifth light emitting side surface LS5 of the third side light emitting element 40C.
  • the first extending portion 103C of the first wiring 103 constitutes the first reflecting portion 80C. In this way, it can be said that the first wiring 103 has a portion extending from the fifth light emitting side surface LS5 toward the third sealing end surface 65 as the first reflecting portion 80C.
  • the laser light directed from the fifth light emitting side surface LS5 toward the substrate surface 21 is reflected by the first extension portion 103C, passes through the third sealing end surface 65 or the sealing surface 61, and is emitted to the outside of the semiconductor light emitting device 10. be done.
  • the first reflecting section 80D is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the eighth light emitting side surface LS8 of the fourth side light emitting element 40D.
  • the first extending portion 104C of the first wiring 104 constitutes the first reflecting portion 80D.
  • the first wiring 104 has a portion extending from the eighth light emitting side surface LS8 toward the fourth sealing end surface 66 as the first reflecting portion 80D.
  • the laser light directed from the eighth light emitting side surface LS8 toward the substrate surface 21 is reflected by the first extension portion 104C, passes through the fourth sealing end surface 66 or the sealing surface 61, and is emitted to the outside of the semiconductor light emitting device 10. be done.
  • first end surfaces 101A and 102A in the Y-axis direction can be changed arbitrarily.
  • first end surface 101A may be arranged flush with the first substrate side surface 23 in plan view.
  • the first end surface 102A may be arranged flush with the second substrate side surface 24 in plan view.
  • the first end surfaces 101A, 102A may be positioned in the Y-axis direction as long as they have a length that allows the first extensions 101C, 102C to reflect at least a portion of the laser light directed toward the substrate surface 21.
  • the positions of the first end surfaces 103A and 104A in the X-axis direction can be changed arbitrarily.
  • the first end surface 103A may be arranged flush with the third substrate side surface 25 in plan view.
  • the first end surface 104A may be arranged flush with the fourth substrate side surface 26 in plan view.
  • the first end surfaces 103A, 104A may be positioned in the X-axis direction as long as they have a length that allows the first extensions 103C, 104C to reflect at least a portion of the laser light directed toward the substrate surface 21.
  • the plurality of side light emitting elements include a first side light emitting element 40A having a first light emitting side surface LS1 and a second light emitting side surface LS2, and a second side light emitting element having a third light emitting side surface LS3 and a fourth light emitting side surface LS4. It includes an element 40B, a third side light emitting element 40C having a fifth light emitting side LS5 and a sixth light emitting side LS6, and a fourth side light emitting element 40D having a seventh light emitting side LS7 and an eighth light emitting side LS8.
  • the first side light emitting element 40A is arranged to emit light from the first light emitting side surface LS1 in a first direction (+Y direction) intersecting the thickness direction of the substrate 20.
  • the second side light emitting element 40B is arranged so as to emit light from the fourth light emitting side LS4 in a second direction (-Y direction) which is a direction intersecting the thickness direction of the substrate 20 and different from the first direction.
  • the third side light emitting element 40C emits light from the fifth light emitting side LS5 in a third direction (+X direction) which is a direction that intersects the thickness direction of the substrate 20 and is different from both the first direction and the second direction. It is arranged like this.
  • the fourth side light emitting element 40D emits an eighth light in a fourth direction (-X direction) which is a direction intersecting the thickness direction of the substrate 20 and which is different from each of the first direction, the second direction, and the third direction. It is arranged so that light is emitted from the side surface LS8.
  • the semiconductor light emitting device 10 can emit light more widely.
  • the semiconductor light emitting device 10 of the seventh embodiment will be described with reference to FIGS. 35 to 39.
  • the semiconductor light emitting device 10 of the seventh embodiment differs from the semiconductor light emitting device 10 of the sixth embodiment mainly in the number and arrangement of side light emitting elements.
  • points different from the sixth embodiment will be explained in detail, and components common to the sixth embodiment will be denoted by the same reference numerals, and their explanation will be omitted. Note that in FIGS. 35, 38, and 39, the diffusion material 67 is omitted for easy understanding of the drawings.
  • the semiconductor light emitting device 10 of the seventh embodiment is different from the semiconductor light emitting device 10 of the sixth embodiment in that it includes a fifth side light emitting element 40E, a sixth side light emitting element 40F, a seventh side light emitting element 40G, and an eighth side light emitting element.
  • This configuration further includes an element 40H.
  • the fifth to eighth side light emitting elements 40E to 40H have the same configuration.
  • the fifth to eighth side light emitting elements 40E to 40H have the same configuration as the first to fourth side light emitting elements 40A to 40D (see FIG. 28) of the sixth embodiment. That is, the first to eighth side light emitting elements 40A to 40H have the same configuration as the side light emitting element 40 of the first embodiment (see FIG. 2). Therefore, in the first to eighth side light emitting elements 40A to 40H, the same components as those in the side light emitting element 40 are given the same reference numerals, and the description thereof will be omitted.
  • the first to eighth side light emitting elements 40A to 40H are arranged around the top light emitting element 50 in plan view. More specifically, the first to eighth side light emitting elements 40A to 40H are arranged at 45° intervals around the top light emitting element 50 in plan view. The arrangement of the first to fourth side light emitting elements 40A to 40D is the same as in the sixth embodiment.
  • the fifth side light emitting element 40E is arranged closer to the first substrate side surface 23 (first sealed end surface 63) and the third substrate side surface 25 (third sealed end surface 65) with respect to the top surface emitting element 50. In plan view, the fifth side light emitting element 40E is arranged around the top light emitting element 50 between the first side light emitting element 40A and the third side light emitting element 40C.
  • the sixth side light emitting element 40F is arranged closer to the second substrate side surface 24 (second sealed end surface 64) and the fourth substrate side surface 26 (fourth sealed end surface 66) with respect to the top light emitting element 50.
  • the sixth side light emitting element 40F is arranged around the top light emitting element 50 between the second side light emitting element 40B and the fourth side light emitting element 40D.
  • the fifth side light emitting element 40E and the sixth side light emitting element 40F face each other with the top light emitting element 50 in between.
  • the seventh side light emitting element 40G is arranged closer to the first substrate side surface 23 (first sealed end surface 63) and the fourth substrate side surface 26 (fourth sealed end surface 66) with respect to the top light emitting element 50. In plan view, the seventh side light emitting element 40G is arranged around the top light emitting element 50 between the first side light emitting element 40A and the fourth side light emitting element 40D.
  • the eighth side light emitting element 40H is arranged closer to the second substrate side surface 24 (second sealed end surface 64) and the third substrate side surface 25 (third sealed end surface 65) with respect to the top surface emitting element 50.
  • the eighth side light emitting element 40H is arranged around the top light emitting element 50 between the second side light emitting element 40B and the third side light emitting element 40C.
  • the seventh side light emitting element 40G and the eighth side light emitting element 40H face each other with the top light emitting element 50 in between. Note that the configuration and arrangement of the first to fourth side light emitting elements 40A to 40D are the same as in the sixth embodiment, so detailed description thereof will be omitted.
  • the fifth side light emitting element 40E has a ninth light emitting side LS9 and a tenth light emitting side LS10.
  • the ninth light emitting side surface LS9 is formed on the first element side surface 43 of the fifth side light emitting element 40E, and the tenth light emitting side surface LS10 is formed on the second element side surface 44 of the fifth side light emitting element 40E.
  • the fifth side light emitting element 40E is arranged such that the ninth light emitting side surface LS9 faces the first substrate side surface 23 (first sealed end surface 63) and the third substrate side surface 25 (third sealed end surface 65).
  • the fifth side light emitting element 40E is arranged so as to emit laser light from the ninth light emitting side LS9 in a fifth direction between the +Y direction (first direction) and the +X direction (third direction) in plan view. ing.
  • the fifth direction is a direction different from the first to fourth directions in plan view. More specifically, the fifth direction is a direction shifted by 45 degrees from both the first direction and the third direction in plan view.
  • the tenth light emitting side surface LS10 faces the second substrate side surface 24 (second sealed end surface 64) and the fourth substrate side surface 26 (fourth sealed end surface 66).
  • the tenth light-emitting side surface LS10 faces the sixth direction between the -Y direction (second direction) and the -X direction (fourth direction) in plan view. It can also be said that the tenth light emitting side surface LS10 faces the sixth direction, which is the opposite direction to the fifth direction.
  • the sixth direction is a direction shifted by 45 degrees from both the second direction and the fourth direction. That is, the fifth side light emitting element 40E is arranged so as to emit laser light from the tenth light emitting side LS10 in the sixth direction.
  • the output of the laser light emitted from the ninth light emitting side LS9 and the output of the laser light emitted from the tenth light emitting side LS10 are different from each other.
  • the ratio of the output of the laser light emitted from the ninth light emitting side LS9 and the output of the laser light emitted from the tenth light emitting side LS10 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the ninth light emitting side LS9 and the tenth light emitting side LS10.
  • the reflectance of the reflective film formed on the ninth light emitting side LS9 is set to be lower than the reflectance of the reflective film formed on the tenth light emitting side LS10.
  • the sixth side light emitting element 40F has an eleventh light emitting side LS11 and a twelfth light emitting side LS12.
  • the eleventh light emitting side surface LS11 is formed on the first element side surface 43 of the sixth side light emitting element 40F
  • the twelfth light emitting side surface LS12 is formed on the second element side surface 44 of the sixth side light emitting element 40F.
  • the sixth side light emitting element 40F is arranged such that the twelfth light emitting side surface LS12 faces the second substrate side surface 24 (second sealed end surface 64) and the fourth substrate side surface 26 (fourth sealed end surface 66).
  • the sixth side light emitting element 40F is arranged so as to emit laser light from the twelfth light emitting side LS12 in the sixth direction between the -Y direction (second direction) and the -X direction (fourth direction).
  • the eleventh light emitting side surface LS11 faces the first substrate side surface 23 (first sealed end surface 63) and the third substrate side surface 25 (third sealed end surface 65).
  • the eleventh light emitting side surface LS11 faces the fifth direction between the +Y direction (first direction) and the +X direction (third direction). Therefore, the eleventh light emitting side LS11 faces the tenth light emitting side LS10 of the fifth side light emitting element 40E with the top light emitting element 50 interposed therebetween.
  • the sixth side light emitting element 40F is arranged to emit laser light from the eleventh light emitting side LS11 in the fifth direction.
  • the output of the laser light emitted from the twelfth light emitting side LS12 and the output of the laser light emitted from the eleventh light emitting side LS11 are different from each other.
  • the ratio of the output of the laser light emitted from the twelfth light emitting side LS12 and the output of the laser light emitted from the eleventh light emitting side LS11 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the eleventh light emitting side surface LS11 and the twelfth light emitting side surface LS12.
  • the reflectance of the reflective film formed on the twelfth light emitting side LS12 is set to be lower than the reflectance of the reflective film formed on the eleventh light emitting side LS11.
  • the seventh side light emitting element 40G has a thirteenth light emitting side LS13 and a fourteenth light emitting side LS14.
  • the thirteenth light emitting side surface LS13 is formed on the first element side surface 43 of the seventh side light emitting element 40G, and the fourteenth light emitting side surface LS14 is formed on the second element side surface 44 of the seventh side light emitting element 40G.
  • the seventh side light emitting element 40G is arranged such that the thirteenth light emitting side surface LS13 faces the first substrate side surface 23 (first sealed end surface 63) and the fourth substrate side surface 26 (fourth sealed end surface 66).
  • the seventh side light emitting element 40G is arranged to emit laser light from the thirteenth light emitting side LS13 in the seventh direction between the first direction (+Y direction) and the fourth direction (-X direction). .
  • the seventh direction is a direction different from the first to sixth directions in plan view. More specifically, the seventh direction is a direction shifted by 45 degrees from both the first direction and the fourth direction in plan view.
  • the fourteenth light emitting side surface LS14 faces the second substrate side surface 24 (second sealed end surface 64) and the third substrate side surface 25 (third sealed end surface 65). In other words, the fourteenth light emitting side surface LS14 faces the eighth direction between the second direction (-Y direction) and the third direction (+X direction).
  • the fourteenth light emitting side surface LS14 faces the eighth direction, which is the opposite direction to the seventh direction.
  • the eighth direction is a direction shifted by 45 degrees from both the second direction and the third direction.
  • the seventh side light emitting element 40G is arranged to emit laser light from the fourteenth light emitting side LS14 in the seventh direction.
  • the output of the laser light emitted from the thirteenth light emitting side LS13 and the output of the laser light emitted from the fourteenth light emitting side LS14 are different from each other.
  • the ratio of the output of the laser light emitted from the thirteenth light emitting side LS13 and the output of the laser light emitted from the fourteenth light emitting side LS14 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the thirteenth light emitting side surface LS13 and the fourteenth light emitting side surface LS14.
  • the reflectance of the reflective film formed on the thirteenth light emitting side LS13 is set to be lower than the reflectance of the reflective film formed on the fourteenth light emitting side LS14.
  • the eighth side light emitting element 40H has a fifteenth light emitting side LS15 and a sixteenth light emitting side LS16.
  • the fifteenth light emitting side surface LS15 is formed on the first element side surface 43 of the eighth side light emitting element 40H
  • the sixteenth light emitting side surface LS16 is formed on the second element side surface 44 of the eighth side light emitting element 40H.
  • the eighth side light emitting element 40H is arranged such that the sixteenth light emitting side surface LS16 faces the second substrate side surface 24 (second sealed end surface 64) and the third substrate side surface 25 (third sealed end surface 65).
  • the eighth side light emitting element 40H is arranged so that the laser beam is emitted from the sixteenth light emitting side LS16 in the eighth direction between the second direction (-Y direction) and the third direction (+X direction). . Further, the fifteenth light emitting side surface LS15 faces the first substrate side surface 23 (first sealed end surface 63) and the fourth substrate side surface 26 (fourth sealed end surface 66). In other words, the fifteenth light emitting side surface LS15 faces the seventh direction, which is the opposite direction to the eighth direction between the first direction (+Y direction) and the fourth direction ( ⁇ X direction). The eighth side light emitting element 40H is arranged to emit laser light from the fifteenth light emitting side LS15 in the seventh direction.
  • the output of the laser light emitted from the sixteenth light emitting side LS16 and the output of the laser light emitted from the fifteenth light emitting side LS15 are different from each other.
  • the ratio of the output of the laser light emitted from the sixteenth light emitting side LS16 and the output of the laser light emitted from the fifteenth light emitting side LS15 is, for example, 9:1.
  • the output of the laser beam is adjusted, for example, by adjusting the reflectance of the reflective films formed on the fifteenth light emitting side surface LS15 and the sixteenth light emitting side surface LS16.
  • the reflectance of the reflective film formed on the sixteenth light emitting side LS16 is set to be lower than the reflectance of the reflective film formed on the fifteenth light emitting side LS15.
  • the output and the output of the laser light emitted from the 16th light emitting side LS16 of the 8th side light emitting element 40H are equal to each other.
  • the output of the laser light emitted from the first light emitting side LS1 of the first side light emitting element 40A, the output of the laser light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B, and the third side light emitting element 40C The output of the laser light emitted from the fifth light emitting side LS5 of , the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D, and the output of the laser light emitted from the ninth light emitting side LS9 of the fifth side light emitting element 40E.
  • the output of the laser light emitted from the 16th light emitting side surface LS16 of the 8 side light emitting element 40H can be individually and arbitrarily changed.
  • the output of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A, the output of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and the output of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B The output of the laser light emitted from the fifth light emitting side LS5 of 40C, the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D, and the output of the laser light emitted from the ninth light emitting side LS9 of the fifth side light emitting element 40E.
  • the output of the laser light emitted from the 16th light emitting side LS16 of the 8th side light emitting element 40H may be different from each other.
  • the output of the laser light emitted from the first light emitting side LS1 of the first side light emitting element 40A, the output of the laser light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B, and the output of the laser light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B The output of the laser light emitted from the fifth light emitting side LS5 of the element 40C, the output of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D, and the ninth light emitting side LS9 of the fifth side light emitting element 40E.
  • 1 to 7 of the outputs of the laser light emitted from the 16th light emitting side surface LS16 of the 8th side light emitting element 40H may be different from the remaining ones.
  • the wavelength of the laser light emitted from the first light emitting side LS1 of the first side light emitting element 40A, the wavelength of the laser light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B, and the wavelength of the laser light emitted from the fourth light emitting side LS4 of the second side light emitting element 40B The wavelength of the laser light emitted from the fifth light emitting side LS5 of the side light emitting element 40C, the wavelength of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D, and the ninth light emitting side of the fifth side light emitting element 40E.
  • the wavelength and the wavelength of the laser light emitted from the 16th light emitting side LS16 of the 8th side light emitting element 40H are equal to each other.
  • the wavelength of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and the third side light emitting element 40C.
  • the wavelength of the laser light emitted from the 16th light emitting side LS16 of the 8 side light emitting element 40H can be individually and arbitrarily changed.
  • the wavelength of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A, the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B are set.
  • the wavelengths of the laser beams emitted from the 16th light emitting side surface LS16 of the 8th side light emitting element 40H may be different from each other.
  • the wavelength of the laser light emitted from the first light emitting side surface LS1 of the first side light emitting element 40A, the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B, and the wavelength of the laser light emitted from the fourth light emitting side surface LS4 of the second side light emitting element 40B The wavelength of the laser light emitted from the fifth light emitting side LS5 of the element 40C, the wavelength of the laser light emitted from the eighth light emitting side LS8 of the fourth side light emitting element 40D, and the ninth light emitting side LS9 of the fifth side light emitting element 40E.
  • 1 to 7 of the wavelengths of the laser light emitted from the 16th light emitting side LS16 of the 8th side light emitting element 40H may be different from the remaining wavelengths.
  • the semiconductor light emitting device 10 includes first wirings 105 to 108 in addition to the first wirings 101 to 104 of the sixth embodiment. Each of the first wirings 105 to 108 is formed on the substrate surface 21.
  • Each of the first wirings 105 to 108 has the same shape and size.
  • Each of the shapes and sizes of the first wirings 105 to 108 is the same as the first wirings 101 to 104 of the sixth embodiment.
  • the first wirings 105 to 108 are formed of a material containing Cu, similar to the first wirings 101 to 104. Note that each of the shapes and sizes of the first wirings 105 to 108 can be changed arbitrarily.
  • the first wiring 105 is arranged closer to the first substrate side surface 23 and the third substrate side surface 25 with respect to the second wiring 32.
  • the first wiring 105 is arranged between the first wiring 101 and the first wiring 103 in the circumferential direction (hereinafter referred to as "circumferential direction") of the second wiring 32.
  • the first wiring 105 is arranged so that the direction along the fifth direction is the longitudinal direction, and the direction along the seventh direction is the transversal direction.
  • the first wiring 106 is arranged closer to the second substrate side 24 and the fourth substrate side 26 with respect to the second wiring 32.
  • the first wiring 106 is arranged between the first wiring 102 and the first wiring 104 in the circumferential direction. Therefore, the first wiring 106 is arranged to face the first wiring 105 via the second wiring 32 in plan view.
  • the first wiring 105, the second wiring 32, and the first wiring 106 are arranged in a line in the fifth direction (sixth direction).
  • the first wiring 106 is arranged so that the sixth direction is the longitudinal direction and the direction along the seventh direction is the transversal direction.
  • the first wiring 107 is arranged closer to the first substrate side surface 23 and the fourth substrate side surface 26 with respect to the second wiring 32.
  • the first wiring 107 is arranged between the first wiring 101 and the first wiring 104 in the circumferential direction.
  • the first wiring 107 is arranged so that the direction along the seventh direction is the longitudinal direction, and the direction along the fifth direction is the transversal direction.
  • the first wiring 108 is arranged closer to the second substrate side 24 and the third substrate side 25 with respect to the second wiring 32.
  • the first wiring 108 is arranged between the first wiring 102 and the first wiring 103 in the circumferential direction. Therefore, the first wiring 108 is arranged to face the first wiring 107 via the second wiring 32 in plan view.
  • the first wiring 107, the second wiring 32, and the first wiring 108 are arranged in a line in the seventh direction (eighth direction).
  • the first wiring 108 is arranged so that the direction along the eighth direction is the longitudinal direction, and the direction along the fifth direction is the transversal direction.
  • the semiconductor light emitting device 10 includes first electrodes 125 to 128 in addition to the first electrodes 121 to 124 of the sixth embodiment.
  • Each of the first electrodes 125 to 128 is formed on the back surface 22 of the substrate.
  • Each of the first electrodes 125 to 128 is made of a material containing, for example, Cu.
  • the first electrode 125 is arranged closer to the first substrate side surface 23 and the third substrate side surface 25 with respect to the second electrode 35. In plan view, the first electrode 125 is arranged at a position overlapping with the first wiring 105 (see FIG. 36).
  • the first electrode 126 is arranged closer to the second substrate side surface 24 and the fourth substrate side surface 26 with respect to the second electrode 35. In plan view, the first electrode 126 is arranged at a position overlapping with the first wiring 106 (see FIG. 36).
  • the first electrode 127 is arranged closer to the first substrate side surface 23 and the fourth substrate side surface 26 with respect to the second electrode 35. In plan view, the first electrode 127 is arranged at a position overlapping with the first wiring 107 (see FIG. 36).
  • the first electrode 128 is arranged closer to the second substrate side surface 24 and the third substrate side surface 25 with respect to the second electrode 35. In plan view, the first electrode 128 is arranged at a position overlapping with the first wiring 108 (see FIG. 36).
  • the semiconductor light emitting device 10 includes first vias 145 to 148 in addition to the first vias 141 to 144 of the sixth embodiment.
  • Each of the first vias 145 to 148 penetrates the substrate 20 in its thickness direction (Z-axis direction).
  • Each of the first vias 145 to 148 is made of a material containing, for example, Cu.
  • the first via 145 electrically connects the first wiring 105 and the first electrode 125.
  • a plurality of first vias 145 are provided.
  • the plurality of first vias 145 are arranged at positions overlapping both the first wiring 105 and the first electrode 125 in a planar view.
  • the plurality of first vias 145 are arranged such that the number of the first vias 145 in the longitudinal direction (Y-axis direction) of the first wiring 105 (first electrode 125) is greater than the number of the first vias 145 in the lateral direction (X-axis direction) of the first wiring 105 (first electrode 125).
  • the first via 146 electrically connects the first wiring 106 and the first electrode 126.
  • a plurality of first vias 146 are provided.
  • the plurality of first vias 146 are arranged at positions overlapping both the first wiring 106 and the first electrode 126 in a plan view.
  • the arrangement of the first vias 146 is the same as the arrangement of the first vias 145.
  • the first via 147 electrically connects the first wiring 107 and the first electrode 127.
  • a plurality of first vias 147 are provided.
  • the plurality of first vias 147 are arranged at positions overlapping both the first wiring 107 and the first electrode 127 in a plan view.
  • the number of first vias 147 in the longitudinal direction (X-axis direction) of the first wiring 107 (first electrode 127) is equal to the number in the lateral direction (Y-axis direction) of the first wiring 107 (first electrode 127). are arranged so that there are more than
  • the first via 148 electrically connects the first wiring 108 and the first electrode 128.
  • a plurality of first vias 148 are provided.
  • the plurality of first vias 148 are arranged at positions overlapping both the first wiring 108 and the first electrode 128 in a plan view.
  • the arrangement of the first vias 148 is the same as the arrangement of the first vias 147. Note that the number of first vias 145 to 148 can be changed arbitrarily. In one example, each of the first vias 145-148 may be one. Further, the number of first vias 141 to 144 can be changed arbitrarily as in the sixth embodiment.
  • the fifth side light emitting element 40E is mounted on the first wiring 105. More specifically, the fifth side light emitting element 40E is bonded to the first wiring 105 using a conductive bonding material (not shown). That is, the fifth side light emitting element 40E is mounted on the first wiring 105. Thereby, the cathode electrode 48 (not shown in FIG. 38) of the fifth side light emitting element 40E is electrically connected to the first wiring 105. The anode electrode 47 of the fifth side light emitting element 40E is electrically connected to the third wiring 111 by a wire W1e.
  • the fifth side light emitting element 40E is arranged closer to the second wiring 32 of the first wiring 105. More specifically, the center of the fifth side light emitting element 40E in the fifth direction is located closer to the second interconnect 32 than the center of the first interconnect 105 in the fifth direction.
  • the first wiring 105 includes a first end surface 105A and a second end surface 105B that constitute both end surfaces of the first wiring 105 in the fifth direction.
  • the first end surface 105A is the end surface of the first wiring 105 in the fifth direction that is farthest from the second wiring 32
  • the second end surface 105B is the second end surface of the first wiring 105 in the fifth direction. This is the end face closer to the wiring 32.
  • the first end surface 105A is arranged inside (closer to the second wiring 32) than both the first substrate side surface 23 and the third substrate side surface 25.
  • the distance D1e in the fifth direction between the first element side surface 43 (ninth light emitting side surface LS9) of the fifth side light emitting element 40E and the first end surface 105A of the first wiring 105 is It is larger than the distance D2e between the element side surface 44 (tenth light emitting side surface LS10) and the second end surface 105B of the first wiring 105 in the fifth direction.
  • the first wiring 105 is a portion extending from the first element side surface 43 (ninth light emitting side surface LS9) of the fifth side light emitting element 40E toward the first sealed end surface 63 and the third sealed end surface 65. It can also be said that it has the first extending portion 105C. It can be said that the first extending portion 105C extends in the fifth direction from the ninth light emitting side surface LS9.
  • the first extending portion 105C includes a first end surface 105A.
  • the sixth side light emitting element 40F is mounted on the first wiring 106. More specifically, the sixth side light emitting element 40F is bonded to the first wiring 106 using a conductive bonding material (not shown). That is, the sixth side light emitting element 40F is mounted on the first wiring 106. Thereby, the cathode electrode 48 (not shown in FIG. 39) of the sixth side light emitting element 40F is electrically connected to the first wiring 106. The anode electrode 47 of the sixth side light emitting element 40F is electrically connected to the third wiring 112 by a wire W1f.
  • the sixth side light emitting element 40F is arranged closer to the second wiring 32 of the first wiring 106. More specifically, the center of the sixth side light emitting element 40F in the sixth direction is located closer to the second interconnect 32 than the center of the first interconnect 106 in the sixth direction.
  • the first wiring 106 includes a first end surface 106A and a second end surface 106B that constitute both end surfaces of the first wiring 106 in the sixth direction.
  • the first end surface 106A is the end surface of the first wiring 106 in the sixth direction that is farthest from the second wiring 32
  • the second end surface 106B is the second end surface of the first wiring 106 in the sixth direction. This is the end face closer to the wiring 32.
  • the first end surface 106A is arranged inside (closer to the second wiring 32) than both the second substrate side surface 24 and the fourth substrate side surface 26.
  • the distance D1f in the sixth direction between the second element side surface 44 (twelfth light emitting side surface LS12) of the sixth side light emitting element 40F and the first end surface 106A of the first wiring 106 is It is larger than the distance D2f between the element side surface 43 (eleventh light emitting side surface LS11) and the second end surface 106B of the first wiring 106 in the sixth direction.
  • the first wiring 106 has a portion extending from the second element side surface 44 (twelfth light emitting side surface LS12) of the sixth side light emitting element 40F toward the second sealed end surface 64 and the fourth sealed end surface 66. It can also be said that it has the first extending portion 106C. It can be said that the first extending portion 106C extends in the sixth direction from the twelfth light emitting side surface LS12.
  • the first extending portion 106C includes a first end surface 106A.
  • the seventh side light emitting element 40G is mounted on the first wiring 107. More specifically, the seventh side light emitting element 40G is bonded to the first wiring 107 using a conductive bonding material SD. That is, the seventh side light emitting element 40G is mounted on the first wiring 107. Thereby, the cathode electrode 48 (not shown in FIG. 39) of the seventh side light emitting element 40G is electrically connected to the first wiring 107. The anode electrode 47 of the seventh side light emitting element 40G is electrically connected to the third wiring 111 by a wire W1g.
  • the seventh side light emitting element 40G is arranged closer to the second wiring 32 of the first wiring 107. More specifically, the center of the seventh side light emitting element 40G in the seventh direction is located closer to the second interconnect 32 than the center of the first interconnect 107 in the seventh direction.
  • the first wiring 107 includes a first end surface 107A and a second end surface 107B that constitute both end surfaces of the first wiring 107 in the seventh direction.
  • the first end surface 107A is the end surface of the first wiring 107 in the seventh direction that is farthest from the second wiring 32
  • the second end surface 107B is the second end surface of the first wiring 107 in the seventh direction. This is the end face closer to the wiring 32.
  • the first end surface 107A is arranged inside (closer to the second wiring 32) than both the first substrate side surface 23 and the fourth substrate side surface 26.
  • the distance D1g in the seventh direction between the first element side surface 43 (thirteenth light emitting side surface LS13) of the seventh side light emitting element 40G and the first end surface 107A of the first wiring 107 is the second side surface of the seventh side light emitting element 40G. It is larger than the distance D2g between the element side surface 44 (fourteenth light emitting side surface LS14) and the second end surface 107B of the first wiring 107 in the seventh direction.
  • the first wiring 107 is a portion extending from the first element side surface 43 (thirteenth light emitting side surface LS13) of the seventh side light emitting element 40G toward the first sealed end surface 63 and the fourth sealed end surface 66.
  • the first extending portion 107C has the first extending portion 107C. It can be said that the first extending portion 107C extends in the seventh direction from the thirteenth light emitting side surface LS13.
  • the first extending portion 107C includes a first end surface 107A.
  • the eighth side light emitting element 40H is mounted on the first wiring 108. More specifically, the eighth side light emitting element 40H is bonded to the first wiring 108 using a conductive bonding material SD. That is, the eighth side light emitting element 40H is mounted on the first wiring 108. Thereby, the cathode electrode 48 (not shown in FIG. 38) of the eighth side light emitting element 40H is electrically connected to the first wiring 108. The anode electrode 47 of the eighth side light emitting element 40H is electrically connected to the third wiring 112 by a wire W1h.
  • the eighth side light emitting element 40H is arranged closer to the second wiring 32 of the first wiring 108. More specifically, the center of the eighth side light emitting element 40H in the eighth direction is located closer to the second interconnect 32 than the center of the first interconnect 108 in the eighth direction.
  • the first wiring 108 includes a first end surface 108A and a second end surface 108B that constitute both end surfaces of the first wiring 108 in the eighth direction.
  • the first end surface 108A is the end surface of the first wiring 108 in the eighth direction that is farthest from the second wiring 32
  • the second end surface 108B is the second end surface of the first wiring 108 in the eighth direction. This is the end face closer to the wiring 32.
  • the first end surface 108A is arranged inside (closer to the second wiring 32) than both the second substrate side surface 24 and the third substrate side surface 25.
  • the distance D1h in the eighth direction between the second element side surface 44 (sixteenth light emitting side surface LS16) of the eighth side light emitting element 40H and the first end surface 108A of the first wiring 108 is It is larger than the distance D2h between the element side surface 43 (fifteenth light emitting side surface LS15) and the second end surface 108B of the first wiring 108 in the eighth direction.
  • the first wiring 108 is a portion extending from the second element side surface 44 (sixteenth light emitting side surface LS16) of the eighth side light emitting element 40H toward the second sealed end surface 64 and the third sealed end surface 65.
  • the first extending portion 108C has a first extending portion 108C. It can be said that the first extending portion 108C extends in the eighth direction from the sixteenth light emitting side surface LS16.
  • the first extending portion 108C includes a first end surface 108A.
  • the laser beams from the fifth to eighth side light emitting elements 40E to 40H are diffused (scattered) by the diffusion material 67.
  • the laser beams from the fifth to eighth side light emitting elements 40E to 40H include laser beams directed toward the substrate surface 21.
  • the semiconductor light emitting device 10 includes first reflecting portions 80E to 80H that reflect at least a portion of the laser light directed toward the substrate surface 21 out of the laser light from each of the fifth to eighth side light emitting elements 40E to 40H.
  • the first reflecting section 80E is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the ninth light emitting side surface LS9 of the fifth side light emitting element 40E.
  • the first extending portion 105C of the first wiring 105 constitutes the first reflecting portion 80E.
  • the first wiring 105 has a portion extending from the ninth light emitting side surface LS9 toward the first sealed end surface 63 and the third sealed end surface 65 as the first reflective portion 80E.
  • the laser light directed from the ninth light emitting side surface LS9 toward the substrate surface 21 is reflected by the first extension portion 105C and passes through the first sealing end surface 63, the third sealing end surface 65, or the sealing surface 61. The light is emitted to the outside of the semiconductor light emitting device 10.
  • the first reflecting section 80F is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the twelfth light emitting side surface LS12 of the sixth side light emitting element 40F.
  • the first extending portion 106C of the first wiring 106 constitutes the first reflecting portion 80F. In this way, it can be said that the first wiring 106 has a portion extending from the twelfth light emitting side surface LS12 toward the second sealed end surface 64 and the fourth sealed end surface 66 as the first reflective portion 80F.
  • the laser light directed from the twelfth light emitting side surface LS12 toward the substrate surface 21 is reflected by the first extension portion 106C and passes through the second sealing end surface 64, the fourth sealing end surface 66, or the sealing surface 61.
  • the light is emitted to the outside of the semiconductor light emitting device 10.
  • the first reflecting section 80G is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the thirteenth light emitting side surface LS13 of the seventh side light emitting element 40G.
  • the first extending portion 107C of the first wiring 107 constitutes the first reflecting portion 80G.
  • the first wiring 107 has a portion extending from the thirteenth light emitting side surface LS13 toward the first sealed end surface 63 and the fourth sealed end surface 66 as the first reflective portion 80G.
  • the laser beam directed from the thirteenth light emitting side surface LS13 toward the substrate surface 21 is reflected by the first extension portion 107C and passes through the first sealing end surface 63, the fourth sealing end surface 66, or the sealing surface 61.
  • the light is emitted to the outside of the semiconductor light emitting device 10.
  • the first reflecting section 80H is configured to reflect at least a portion of the laser light directed toward the substrate surface 21 from the 16th light emitting side surface LS16 of the 8th side light emitting element 40H.
  • the first extending portion 108C of the first wiring 108 constitutes the first reflecting portion 80H. In this way, it can be said that the first wiring 108 has a portion extending from the sixteenth light emitting side surface LS16 toward the second sealed end surface 64 and the third sealed end surface 65 as the first reflective portion 80H.
  • the laser beam directed from the sixteenth light emitting side surface LS16 toward the substrate surface 21 is reflected by the first extension portion 108C and passes through the second sealing end surface 64, the third sealing end surface 65, or the sealing surface 61.
  • the light is emitted to the outside of the semiconductor light emitting device 10.
  • each of the position of the first end surface 105A in the fifth direction, the position of the first end surface 106A in the sixth direction, the position of the first end surface 107A in the seventh direction, and the position of the first end surface 108A in the eighth direction is arbitrary. It can be changed to The first end faces 105A to 108A may be located at such a position that the first extensions 105C to 108C have a length that allows at least a portion of the laser beam directed toward the substrate surface 21 to be reflected.
  • the plurality of side light emitting elements are arranged between the first side light emitting element 40A and the third side light emitting element 40C, and include a fifth side light emitting element having a ninth light emitting side LS9 and a tenth light emitting side LS10. 40E, a sixth side light emitting element 40F disposed between the second side light emitting element 40B and the fourth side light emitting element 40D and having an eleventh light emitting side LS11 and a twelfth light emitting side LS12, and a first side light emitting element 40A.
  • the seventh side light emitting element 40G having the thirteenth light emitting side LS13 and the fourteenth light emitting side LS14, the second side light emitting element 40B and the third side light emitting element 40C.
  • An eighth side light emitting element 40H is disposed between the two and has a fifteenth light emitting side surface LS15 and a sixteenth light emitting side surface LS16.
  • the fifth side light emitting element 40E is arranged so as to emit light from the ninth light emitting side LS9 in a fifth direction intersecting the thickness direction of the substrate 20 and between the first direction and the third direction. ing.
  • the sixth side light emitting element 40F is arranged so as to emit light from the twelfth light emitting side LS12 in a sixth direction intersecting the thickness direction of the substrate 20 and between the second direction and the fourth direction.
  • the seventh side light emitting element 40G is arranged so as to emit light from the thirteenth light emitting side LS13 in a seventh direction intersecting the thickness direction of the substrate 20 and between the first direction and the fourth direction.
  • the eighth side light emitting element 40H is arranged so as to emit light from the sixteenth light emitting side LS16 in an eighth direction intersecting the thickness direction of the substrate 20 and between the second direction and the third direction. ing.
  • the first to eighth side light emitting elements 40A to 40H emit light in eight different directions among the directions intersecting the thickness direction of the substrate 20. Thereby, the semiconductor light emitting device 10 can emit light more widely.
  • the semiconductor light emitting device 10 of the eighth embodiment will be described with reference to FIGS. 40 to 45.
  • the semiconductor light emitting device 10 of the eighth embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the structure of the substrate. Below, points different from the first embodiment will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor light emitting device 10 of the first embodiment, and the explanation thereof will be omitted.
  • the semiconductor light emitting device 10 includes a substrate 20, first to third wirings 31 to 33, first to third electrodes 34 to 36, and first to third vias 37 to 39 (both shown in FIG. (see), a substrate 160 is provided.
  • the substrate 160 is configured as a component that supports the side light emitting element 40 and the top light emitting element 50.
  • the substrate 160 includes an insulating substrate 160A made of, for example, black epoxy resin.
  • the insulating substrate 160A can also be formed of a heat-resistant material such as engineered plastic.
  • the structure formed on the substrate surface 21 such as the wiring such as the first wiring 31 of the first embodiment (see FIG. 2), and the external electrode (such as the first electrode 34) are described.
  • the substrate 160 includes a first conductive part 180, a second conductive part 190, and a third conductive part 200 formed of a conductive material in place of the above wiring and external electrode configuration.
  • the first conductive part 180, the second conductive part 190, and the third conductive part 200 are formed of, for example, a metal frame.
  • a copper frame is used for the first conductive part 180, the second conductive part 190, and the third conductive part 200.
  • a plating film may be provided on the surface of the frame configured as the first conductive part 180, the second conductive part 190, and the third conductive part 200. Examples of the plating film include Ag plating and Ni/Pd/Au plating.
  • the first conductive part 180, the second conductive part 190, and the third conductive part 200 are provided on the insulating substrate 160A.
  • the substrate 160 of the eighth embodiment includes the first conductive part 180, the second conductive part 190, the third conductive part 200, and the insulating substrate 160A.
  • the substrate 160 has a rectangular outer shape with the X-axis direction being the lateral direction and the Y-axis direction being the longitudinal direction.
  • the substrate 160 includes a substrate front surface 161 and a substrate back surface 162 (see FIG. 41) facing opposite to each other in the Z-axis direction, and first to fourth substrate side surfaces 163 to 166 that connect the substrate front surface 161 and the substrate back surface 162.
  • the first substrate side surface 163 and the second substrate side surface 164 constitute both end surfaces of the substrate 160 in the Y-axis direction.
  • each of the first substrate side surface 163 and the second substrate side surface 164 extends in the X-axis direction.
  • the third substrate side surface 165 and the fourth substrate side surface 166 constitute both end surfaces of the substrate 160 in the X-axis direction. In plan view, each of the third substrate side surface 165 and the fourth substrate side surface 166 extends in the Y-axis direction. Note that the shape of the substrate 160 in plan view can be arbitrarily changed.
  • the insulating substrate 160A holds all of the first conductive part 180, the second conductive part 190, and the third conductive part 200.
  • the insulating substrate 160A is integrally formed with the first conductive part 180, the second conductive part 190, and the third conductive part 200 by resin molding. That is, the insulating substrate 160A is a molded resin that holds all of the first conductive part 180, the second conductive part 190, and the third conductive part 200.
  • the insulating substrate 160A has a bottom wall portion 171 and a side wall portion 172.
  • the bottom wall part 171 and the side wall part 172 are integrally formed.
  • the bottom wall portion 171 is formed into a flat plate shape whose thickness direction is in the Z-axis direction. In other words, the Z-axis direction can also be said to be the thickness direction of the substrate 160.
  • the bottom wall portion 171 has a substrate front surface 161 and a substrate back surface 162.
  • the substrate surface 161 is configured as a surface of the bottom wall portion 171 facing in the +Z direction.
  • the substrate back surface 162 is configured as a surface of the bottom wall portion 171 facing in the ⁇ Z direction.
  • the bottom wall portion 171 is provided with a first conductive portion 180, a second conductive portion 190, and a third conductive portion 200.
  • Each of the first conductive part 180, the second conductive part 190, and the third conductive part 200 penetrates the bottom wall part 171 in the Z-axis direction.
  • the side wall portion 172 is provided on the bottom wall portion 171. In plan view, the side wall portion 172 surrounds both the side light emitting element 40 and the top light emitting element 50. As shown in FIG. 40, the side wall portion 172 includes a pair of first side wall portions 172A that are spaced apart from each other, and a second side wall portion 172B that connects the pair of first side wall portions 172A. In the eighth embodiment, the pair of first side wall portions 172A and second side wall portions 172B are integrally formed. The pair of first side wall portions 172A are spaced apart from each other in the X-axis direction. In plan view, each first side wall portion 172A extends in the Y-axis direction, that is, in the longitudinal direction of the substrate 160.
  • the second side wall portion 172B extends in the X-axis direction, that is, in the lateral direction of the substrate 160.
  • the second side wall portion 172B is arranged closer to the second substrate side surface 164 of the substrate 160 than the side light emitting element 40 is.
  • the insulating substrate 160A of the eighth embodiment has a structure in which a portion corresponding to the substrate 20 (see FIG. 5) of the first embodiment and a portion corresponding to the side wall 70 (see FIG. 5) are integrated. It is.
  • the first conductive part 180 provided on the bottom wall part 171 has a first conductive surface 181 and a first conductive back surface 182 facing oppositely to each other in the Z-axis direction.
  • the first conductive surface 181 faces the same side as the substrate front surface 161 and the first conductive back surface 182 faces the same side as the substrate back surface 162.
  • the first conductive surface 181 is exposed from the bottom wall portion 171 and is formed flush with the substrate surface 161 in the illustrated example.
  • the first conductive back surface 182 is exposed from the bottom wall portion 171 and is formed flush with the substrate back surface 162 in the illustrated example.
  • the first conductive surface 181 corresponds to a "conductive surface".
  • the first conductive part 180 includes a first mounting part 183 and a plurality (for example, three) of first hanging lead parts 184 extending from the side edge of the first mounting part 183. Of the side edges of the first mounting portion 183, both edges in the X-axis direction are provided at positions overlapping the side wall portions 172 of the substrate 160 in plan view.
  • the first mounting portion 183 is a portion of the first conductive portion 180 exposed from the substrate surface 161, and corresponds to the first wiring in the first embodiment. Therefore, it can be said that the first conductive section 180 includes the first wiring.
  • the first conductive back surface 182 exposed from the substrate back surface 162 corresponds to the first electrode of the first embodiment. Therefore, it can be said that the first conductive part 180 includes the first electrode.
  • the side light emitting element 40 is mounted on the first mounting section 183 (first conductive surface 181) of the first conductive section 180. More specifically, the side light emitting element 40 is bonded to the surface of the first conductive surface 181 of the first mounting portion 183 exposed from the bottom wall portion 171 using a conductive bonding material SD. Therefore, it can be said that the side light emitting element 40 is mounted on the first conductive section 180 (first mounting section 183). The side light emitting element 40 is electrically connected to the first conductive part 180 via the conductive bonding material SD.
  • the three first hanging lead parts 184 are located at a side edge of the first mounting part 183 on the first board side surface 163 side, a side edge part on the third board side surface 165 side, and a side edge part on the fourth board side surface. It extends from the side edge on the 166 side. Therefore, the three first suspension lead parts 184 are exposed from the first substrate side surface 163, the third substrate side surface 165, and the fourth substrate side surface 166.
  • the first suspension lead portion 184 extending from the side edge of the first mounting portion 183 on the side of the first substrate side surface 163 is also exposed from the substrate surface 161 of the bottom wall portion 171 .
  • the first hanging lead portion 184 extending from the side edge portions on the side of the third substrate side surface 165 and the fourth substrate side surface 166 is provided at a position overlapping with the side wall portion 172 in plan view.
  • Both the second conductive part 190 and the third conductive part 200 are arranged closer to the second substrate side surface 164 than the first conductive part 180.
  • the third conductive part 200 is arranged closer to the fourth substrate side surface 166 than the second conductive part 190 is.
  • the second conductive part 190 has a second conductive surface 191 and a second conductive back surface 192 facing oppositely to each other in the Z-axis direction.
  • the second conductive surface 191 faces the same side as the substrate front surface 161 and the second conductive back surface 192 faces the same side as the substrate back surface 162.
  • the second conductive surface 191 is exposed from the bottom wall portion 171 and is formed flush with the substrate surface 161 in the illustrated example.
  • the second conductive back surface 192 is exposed from the bottom wall portion 171 and is formed flush with the substrate back surface 162 in the illustrated example.
  • the second conductive part 190 includes a second mounting part 193 and a plurality (for example, two) of second hanging lead parts 194 extending from the side edge of the second mounting part 193.
  • a plurality for example, two
  • second hanging lead parts 194 extending from the side edge of the second mounting part 193.
  • both the side edges closer to the second board side surface 164 and the side edges closer to the third board side surface 165 are provided at positions that overlap with the side wall section 172 of the board 160 in plan view. It is being
  • the top light emitting element 50 is mounted on the second mounting section 193 of the second conductive section 190. More specifically, the top light emitting element 50 is bonded to the surface of the second conductive surface 191 of the second mounting portion 193 exposed from the bottom wall portion 171 using a conductive bonding material SD. Therefore, it can be said that the top light emitting element 50 is mounted on the second conductive section 190 (second mounting section 193). The top light emitting element 50 is electrically connected to the second conductive part 190 via the conductive bonding material SD.
  • the two second hanging lead parts 194 extend from the side edge of the second mounting part 193 on the second board side surface 164 side and the side edge part on the third board side surface 165 side. Therefore, the two second hanging lead parts 194 are exposed from the second board side surface 164 and the third board side surface 165.
  • the second hanging lead portion 194 extending from the side edge portions on the side of the second substrate side surface 164 and the third substrate side surface 165 is provided at a position overlapping with the side wall portion 172 in plan view.
  • the second mounting portion 193 is a portion of the second conductive portion 190 exposed from the substrate surface 161, and corresponds to the second wiring in the first embodiment. Therefore, it can be said that the second conductive section 190 includes the second wiring.
  • the second conductive back surface 192 exposed from the substrate back surface 162 corresponds to the second electrode of the first embodiment. Therefore, it can be said that the second conductive part 190 includes a second electrode.
  • the third conductive part 200 has a third conductive surface 201 and a third conductive back surface (not shown) facing oppositely to each other in the Z-axis direction.
  • the third conductive surface 201 faces the same side as the substrate front surface 161, and the third conductive back surface faces the same side as the substrate back surface 162 (see FIG. 41).
  • the third conductive surface 201 is exposed from the bottom wall portion 171 and is formed flush with the substrate surface 161 in the illustrated example.
  • the third conductive back surface is exposed from the bottom wall portion 171, and is formed flush with the substrate back surface 162 in one example.
  • the substrate surface 161 of the substrate 160 is connected to the insulating substrate surface of the insulating substrate 160A, the first conductive surface 181 of the first conductive part 180, the second conductive surface 191 of the second conductive part 190, and the third conductive surface a third conductive surface 201 of portion 200.
  • the insulating substrate surface is a surface of the bottom wall portion 171 of the insulating substrate 160A that faces the same side as the substrate surface 161.
  • the substrate back surface 162 of the substrate 160 includes the insulating substrate back surface of the insulating substrate 160A, the first conductive back surface 182 of the first conductive part 180, and the second conductive back surface 192 of the second conductive part 190. and a third conductive back surface (not shown) of the third conductive part 200.
  • the insulating substrate back surface is a surface of the bottom wall portion 171 of the insulating substrate 160A that faces the same side as the substrate back surface 162.
  • the third conductive part 200 includes a third mounting part 203 and a plurality (for example, two) of third hanging lead parts 204 extending from the side edge of the third mounting part 203.
  • a third mounting part 203 is a portion of the third conductive portion 200 exposed from the substrate surface 161, and corresponds to the third wiring of the first embodiment. Therefore, it can be said that the third conductive section 200 includes the third wiring.
  • the third conductive back surface (not shown) exposed from the substrate back surface 162 corresponds to the third electrode of the first embodiment. Therefore, it can be said that the third conductive part 200 includes a third electrode.
  • the anode electrode 47 of the side light emitting element 40 is electrically connected to the third mounting portion 203 by a wire W1.
  • the anode electrode 54 of the top light emitting element 50 is electrically connected to the third mounting portion 203 by a wire W2. More specifically, the wires W1 and W2 are joined to the surface of the third conductive surface 201 of the third mounting section 203 that is exposed from the bottom wall section 171.
  • the wires W1 and W2 are made of the same material as the wires W1 and W2 of the first embodiment, for example.
  • Both the side light emitting element 40 and the top light emitting element 50 are sealed with a sealing resin 60.
  • the sealing resin 60 is provided in a space surrounded by the bottom wall part 171 and the side wall part 172. Therefore, the second sealing end surface 64 of the sealing resin 60 is in contact with the second side wall portion 172B, and both the third sealing end surface 65 and the fourth sealing end surface 66 are in contact with the pair of first side wall portions 172A. ing.
  • the first sealed end surface 63 is exposed from the side wall portion 172. In the illustrated example, the first sealed end surface 63 is formed flush with the first substrate side surface 163. Further, the sealing resin 60 is mixed with a diffusion material 67 as in the first embodiment.
  • the area of the portion of the first mounting portion 183 exposed from the bottom wall portion 171 is larger than the area of the side light emitting element 40 in plan view. More specifically, the length of the first mounting portion 183 in the X-axis direction is longer than the length of the side light emitting element 40 in the X axis direction, and the length of the first mounting portion 183 in the Y axis direction is longer than the length of the side light emitting element 40. It is longer than the length in the Y-axis direction.
  • the side light emitting element 40 is arranged in a portion of the first mounting section 183 closer to the second mounting section 193 (second substrate side surface 164). More specifically, the center of the side light emitting element 40 in the Y-axis direction is located closer to the second mounting portion 193 (second substrate side surface 164) than the center of the first mounting portion 183 in the Y-axis direction.
  • the first mounting section 183 includes a first end surface 183A and a second end surface 183B that constitute both end surfaces of the first mounting section 183 in the Y-axis direction.
  • the first end surface 183A is the end surface of the first mounting section 183 that is closer to the first board side surface 163, and the second end surface 183B is the end surface of the first mounting section 183 that is closer to the second board side surface 164.
  • the first end surface 183A is arranged inside the first substrate side surface 163 (closer to the second substrate side surface 164).
  • the first end surface 183A is closer to the first substrate side surface 163 than the center in the Y-axis direction between the first substrate side surface 163 and the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 in a plan view. It is located in
  • the length of the first mounting part 183 in the Y-axis direction is longer than the length of the side light emitting element 40 in the Y axis direction, so the first mounting part 183 is connected to the first light emitting side surface LS1 of the side light emitting element 40.
  • It includes a first extending portion 183C that is a portion between the first end surface 183A and a second extending portion 183D that is a portion between the second light emitting side surface LS2 and the second end surface 183B.
  • the first mounting portion 183 (first conductive surface 181) is a portion extending from the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 toward the first sealing end surface 63. It can also be said that it has a certain first extending portion 183C.
  • the first extending portion 183C includes a first end surface 183A.
  • the second extending portion 183D includes a second end surface 183B.
  • the distance DA1 between the first element side surface 43 (first light emitting side surface LS1) of the side light emitting element 40 and the first end surface 183A of the first mounting portion 183 in the Y-axis direction is equal to the second element side surface 44 of the side light emitting element 40. and the second end surface 183B of the first mounting portion 183 in the Y-axis direction.
  • the distance DA1 can be said to be the length of the first extension part 183C in the Y-axis direction
  • the distance DA2 can be said to be the length of the second extension part 183D in the Y-axis direction.
  • the first light emitting side surface LS1 of the side light emitting element 40 faces the same side as the first sealed end surface 63.
  • the laser light emitted from the first light emitting side surface LS1 of the side light emitting element 40 is diffused (scattered) by the diffusing material 67.
  • the laser light includes laser light directed toward the substrate surface 161.
  • the first extension portion 183C reflects at least a portion of the laser beam directed toward the substrate surface 161.
  • the reflected laser light passes through the first sealing end face 63 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 .
  • the semiconductor light emitting device 10 can be said to include the first reflecting section 80 that reflects at least a portion of the laser light emitted from the first light emitting side surface LS1 of the side light emitting element 40 and directed toward the substrate surface 161.
  • the first extending portion 183C of the first mounting portion 183 constitutes the first reflecting portion 80.
  • the first mounting section 183 can be said to have a portion extending from the first light emitting side surface LS1 toward the first sealing end surface 63 as the first reflecting section 80.
  • FIGS. 42 to 45 show a configuration in which four semiconductor light emitting devices 10 can be manufactured at one time for convenience, the configuration is not limited to this, and a configuration can be configured in which more semiconductor light emitting devices 10 can be manufactured at one time. You can.
  • the method for manufacturing the semiconductor light emitting device 10 includes a step of preparing a lead frame 980, a step of forming an insulating substrate 960, a step of mounting a side light emitting element 40 and a top light emitting element 50, and a step of forming wires W1 and W2. , a step of forming a sealing resin 950, and a step of dividing into pieces.
  • a lead frame 980 including a plurality of first conductive parts 180, a plurality of second conductive parts 190, and a plurality of third conductive parts 200 is prepared.
  • Lead frame 980 is made of a material containing Cu, for example.
  • the lead frame 980 includes a plurality of first conductive parts 180 and a plurality of second conductive parts 190.
  • Two first conductive parts 180 adjacent in the X-axis direction are connected to each other by a first hanging lead part 184.
  • Two second conductive parts 190 adjacent in the X-axis direction are connected by a second hanging lead part 194.
  • the first conductive part 180 and the second conductive part 190 that are adjacent in the Y-axis direction are connected by the first hanging lead part 184, the second hanging lead part 194, and the fourth hanging lead part 981.
  • Two third conductive parts 200 adjacent in the Y-axis direction are connected by a third hanging lead part 204 and a fourth hanging lead part 981.
  • the lead frame 980 has a frame portion.
  • the frame portion connects the plurality of first conductive parts 180, the plurality of second conductive parts 190, and the plurality of third conductive parts 200.
  • the fourth suspension lead portion 981 extends in the X-axis direction and is a portion connected to the frame portion.
  • the fourth suspension lead part 981 is arranged between the first suspension lead part 184 and the second suspension lead part 194 in the first conductive part 180 and the second conductive part 190 which are adjacent to each other in the Y-axis direction. and is connected to both the first suspension lead part 184 and the second suspension lead part 194.
  • the fourth hanging lead part 981 is arranged between the two third hanging lead parts 204 in the two third conductive parts 200 adjacent in the Y-axis direction, and is arranged between the two third hanging leads 204 in the Y-axis direction. 204.
  • the insulating substrate 960 is formed by resin molding so as to be integrated with the lead frame 980.
  • Insulating substrate 960 supports lead frame 980.
  • the insulating substrate 960 is formed in a size that includes a plurality of substrates 160 (insulating substrates 160A).
  • black epoxy resin is used for the insulating substrate 960.
  • Insulating substrate 960 includes a plurality of bottom wall sections 971 and a plurality of side wall sections 972. The number of each of the bottom wall part 971 and the side wall part 972 is set according to the number of substrates 160 (insulating substrates 160A) in the insulating substrate 960.
  • a unit side wall surrounding the first mounting section 183, the second mounting section 193, and the third mounting section 203 is formed by side wall sections 972 that are adjacent in plan view.
  • the lead frame 980 may be attached, for example, with an adhesive, to the insulating substrate 960, which is a molded product that has been preformed by resin molding such as injection molding.
  • the insulating substrate 960 and the lead frame 980 are integrated.
  • the insulating substrate 960 is not limited to being made of resin, and may be made of metal or ceramic.
  • the lead frame 980 may be bonded to the preformed insulating substrate 960 by adhesive or metal bonding.
  • the order of the manufacturing steps of the semiconductor light emitting device 10 can be changed arbitrarily.
  • the step of forming the insulating substrate 960 is performed after the step of mounting the side light emitting element 40 and the top light emitting element 50 and the step of forming the wires W1 and W2, and before the step of forming the sealing resin 950.
  • it may be performed after the step of forming the wires W1 and W2.
  • the lead frame 980 may be attached, for example, with an adhesive, to the insulating substrate 960, which is a molded product that has been preformed by resin molding such as injection molding.
  • a step of forming the sealing resin 950 and a step of dividing into pieces are performed in order.
  • the step of mounting the side light emitting element 40 and the top light emitting element 50 includes the step of mounting the side light emitting element 40 on the first mounting section 183 of the first conductive section 180; The step of mounting the top light emitting element 50 on the second mounting section 193 of the second conductive section 190 is included.
  • the side light emitting element 40 is die-bonded, for example, to the first mounting part 183
  • the top light emitting element 50 is die-bonding, for example, to the second mounting part 193.
  • the cathode electrode 48 (see FIG. 45) of the side light emitting element 40 and the first conductive part 180 are electrically connected
  • the cathode electrode 55 (see FIG. 45) of the top light emitting element 50 and the second conductive part 190 are electrically connected.
  • the wire W1 that electrically connects the anode electrode 47 of the side light emitting element 40 and the third mounting part 203 of the third conductive part 200 and the anode of the top light emitting element 50 are formed.
  • a wire W2 that electrically connects the electrode 54 and the third mounting section 203 is formed.
  • Wires W1 and W2 are bonding wires formed by a wire bonding device.
  • first bonding is performed on the wire W1 on the third mounting portion 203 side
  • second bonding is performed on the anode electrode 47 side of the side light emitting element 40.
  • the wire W2 on the third mounting portion 203 side is first bonded, and the wire W2 on the anode electrode 54 side of the top light emitting element 50 is second bonded.
  • the first bonding may be performed on the anode electrode 47 side of the wire W1
  • the second bonding may be performed on the third mounting portion 203 side.
  • the first bonding may be performed on the anode electrode 54 side of the wire W2
  • the second bonding may be performed on the third mounting portion 203 side.
  • the sealing resin 950 is formed in a space surrounded by an insulating substrate 960 and a unit side wall formed by a plurality of side wall parts 972. It can be said that the side wall portion 972 (unit side wall) surrounds the sealing resin 950.
  • the sealing resin 950 is formed by resin molding, for example.
  • the sealing resin 950 seals the first mounting section 183, the second mounting section 193, the third mounting section 203, the side light emitting element 40, the top light emitting element 50, and the wires W1 and W2.
  • the sealing resin 950 is made of a translucent material.
  • the sealing resin 950 is formed of a material containing at least one of silicone resin, epoxy resin, and acrylic resin.
  • the sealing resin 950 is formed by, for example, transfer molding or compression molding.
  • the sealing resin 950 may be filled in a space surrounded by the bottom wall portion 971 of the insulating substrate 960 and the unit side walls of the side wall portions 972 by potting.
  • the sealing resin 950 includes a diffusion material 67 (see FIG. 45).
  • both the side wall portion 972 and the bottom wall portion 971 are cut along the cutting line CL in FIG. 44 by a dicing blade.
  • the side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 that emits laser light emits the laser light toward the first sealing end surface 63 of the sealing resin 60. That is, the side light emitting element 40 is mounted on the first wiring 31 so that the first light emitting side surface LS1 faces the same side as the first sealed end surface 63.
  • the semiconductor light emitting device 10 includes the first conductive section 180.
  • the insulating substrate 160A is a molded resin that holds the first conductive part 180.
  • the insulating substrate 160A is integrally formed with a bottom wall portion 171 that holds the first conductive portion 180 and a side wall portion 172 that rises from the bottom wall portion 171 and surrounds the sealing resin 60 in a plan view.
  • the number of man-hours for manufacturing the insulating substrate 160A can be reduced compared to a configuration in which the bottom wall portion 171 and the side wall portion 172 are formed individually and then bonded together. , the substrate 160 can be easily manufactured.
  • the first conductive surface 181 (first mounting portion 183) of the first conductive portion 180 serves as the first reflective portion 80 from the first light emitting side surface LS1 of the side light emitting element 40 to the first surface of the sealing resin 60. It has a portion extending toward the sealing end surface 63.
  • the first reflective section 80 can be configured by the first conductive section 180 without adding any parts dedicated to the first reflective section 80. Therefore, an increase in the number of parts of the semiconductor light emitting device 10 can be suppressed.
  • the semiconductor light emitting device 10 of the ninth embodiment will be described with reference to FIGS. 46 to 48.
  • the semiconductor light emitting device 10 of the ninth embodiment is different from the semiconductor light emitting device 10 of the first embodiment in that there is a difference between the side light emitting element 40 and the first wiring 31 and between the top light emitting element 50 and the second wiring 32. The difference is that a submount board is interposed between each.
  • points different from the first embodiment will be described in detail, and the same reference numerals will be given to the same components as those of the semiconductor light emitting device 10 of the first embodiment, and the explanation thereof will be omitted.
  • the semiconductor light emitting device 10 includes a first submount substrate 210 and a second submount substrate 220. As shown in FIG. 48, the first submount substrate 210 is interposed between the side light emitting element 40 and the first wiring 31.
  • the first submount substrate 210 electrically connects the side light emitting element 40 and the first wiring 31. More specifically, the first submount substrate 210 electrically connects the cathode electrode 48 of the side light emitting element 40 and the first wiring 31.
  • the first submount substrate 210 is made of, for example, a material having a coefficient of thermal expansion closer to that of the side light emitting element 40 than that of the first wiring 31. That is, the difference in coefficient of thermal expansion between the first submount substrate 210 and the side light emitting element 40 is smaller than the difference in coefficient of thermal expansion between the first wiring 31 and the side light emitting element 40.
  • the side light emitting element 40 is made of gallium arsenide (GaAs)
  • GaAs gallium arsenide
  • the first wiring 31 is formed of a material containing Cu, its coefficient of thermal expansion is approximately 16.5 ⁇ 10 ⁇ 6 /K.
  • the first submount substrate 210 is formed of a material with a coefficient of thermal expansion smaller than 16.5 ⁇ 10 ⁇ 6 /K.
  • the first submount substrate 210 is made of alumina.
  • the thermal expansion coefficient of the first submount substrate 210 is approximately 7.2 ⁇ 10 ⁇ 6 /K.
  • the first submount substrate 210 may be made of aluminum nitride. In this case, the thermal expansion coefficient of the first submount substrate 210 is approximately 4.6 ⁇ 10 ⁇ 6 /K.
  • the first submount substrate 210 is formed into a flat plate shape with its thickness direction in the Z-axis direction.
  • the shape of the first submount substrate 210 in plan view is a rectangular shape with the Y-axis direction as the longitudinal direction and the X-axis direction as the lateral direction.
  • the first submount substrate 210 is formed to be one size larger than the side light emitting element 40 in plan view. Note that the shape of the first submount substrate 210 in plan view can be arbitrarily changed. In one example, the first submount substrate 210 may have a square shape in plan view.
  • Each of the lengths in the direction is the length in the Y-axis direction of the extending portion of the first submount substrate 210 that extends toward the first substrate side surface 23 and the Y-axis direction length of the extending portion that extends toward the second substrate side surface 24. longer than the axial length.
  • the first submount substrate 210 has a first front surface 211, a first back surface 212, and first to fourth side surfaces 213 to 216 that connect the first surface 211 and the first back surface 212. and has.
  • the first front surface 211 faces the same side as the substrate front surface 21, and the first back surface 212 faces the same side as the substrate back surface 22.
  • the first back surface 212 faces the first wiring 31.
  • the first to fourth side surfaces 213 to 216 are surfaces that intersect both the first front surface 211 and the first back surface 212.
  • each of the first to fourth side surfaces 213 to 216 is a surface perpendicular to the first front surface 211 and the first back surface 212.
  • the first side surface 213 and the second side surface 214 constitute both end surfaces of the first submount substrate 210 in the Y-axis direction.
  • the first side surface 213 faces the same side as the first substrate side surface 23, and the second side surface 214 faces the same side as the second substrate side surface 24.
  • the third side surface 215 and the fourth side surface 216 constitute both end surfaces of the first submount substrate 210 in the X-axis direction.
  • the third side surface 215 faces the same side as the third substrate side surface 25, and the fourth side surface 216 faces the same side as the fourth substrate side surface 26.
  • the semiconductor light emitting device 10 includes a first front side wiring 217 formed on the first surface 211 of the first submount substrate 210 and a first back side wiring 218 formed on the first back side 212. and a first via 219 that connects the first front side wiring 217 and the first back side wiring 218.
  • Each of the first front-side wiring 217 and the first back-side wiring 218 is formed of a material containing, for example, Cu.
  • the first via 219 is made of a material containing Cu, for example.
  • the first surface-side wiring 217 is formed into a rectangular shape that is one size smaller than the first submount substrate 210 in plan view.
  • the first back side wiring 218 is formed into a rectangular shape having the same size as the first front side wiring 217 in plan view.
  • a plurality of first vias 219 (eight in the ninth embodiment) are provided, for example.
  • the plurality of first vias 219 are formed by four rows of first vias 219 arranged in a row spaced apart from each other in the Y-axis direction, and two rows spaced apart from each other in the X-axis direction.
  • each of the first front side wiring 217 and the first back side wiring 218 can be changed arbitrarily.
  • the area of the first front-side wiring 217 and the area of the first back-side wiring 218 may be different from each other in plan view.
  • the number of first vias 219 can be changed arbitrarily. In one example, there may be one first via 219.
  • the first submount substrate 210 is bonded to the first wiring 31 using a conductive bonding material SD. That is, the first submount substrate 210 is mounted on the first wiring 31. Thereby, the first back side wiring 218 is electrically connected to the first wiring 31 via the conductive bonding material SD.
  • the first submount board 210 is arranged closer to the second end surface 31B of the first wiring 31 in the Y-axis direction.
  • the distance DB1 between the first submount board 210 and the first end surface 31A of the first wiring 31 in the Y-axis direction is the distance DB1 between the first submount board 210 and the second end surface 31B of the first wiring 31 in the Y-axis direction. It is larger than the distance DB2 in the axial direction.
  • the side light emitting element 40 is mounted on the first submount substrate 210. More specifically, the cathode electrode 48 of the side light emitting element 40 is bonded to the first surface wiring 217 of the first submount substrate 210 using a conductive bonding material SD. Thereby, the cathode electrode 48 is electrically connected to the first surface side wiring 217. Since the first front wiring 217 is electrically connected to the first back wiring 218 via the first via 219, the cathode electrode 48 is electrically connected to the first back wiring 218. Since the first back side wiring 218 is electrically connected to the first wiring 31 by the conductive bonding material SD, the cathode electrode 48 is electrically connected to the first wiring 31. In the ninth embodiment, the side light emitting element 40 is arranged at the center of the first submount substrate 210 in the Y-axis direction.
  • the second submount substrate 220 is interposed between the top light emitting element 50 and the second wiring 32.
  • the second submount substrate 220 electrically connects the top light emitting element 50 and the second wiring 32. More specifically, the second submount substrate 220 electrically connects the cathode electrode 55 of the top light emitting element 50 and the second wiring 32.
  • the second submount substrate 220 is made of, for example, a material having a coefficient of thermal expansion closer to that of the top light emitting element 50 than that of the second wiring 32. That is, the difference in coefficient of thermal expansion between the second submount substrate 220 and the top light emitting element 50 is smaller than the difference in coefficient of thermal expansion between the second wiring 32 and the top light emitting element 50.
  • the coefficient of thermal expansion is about 5.4 ⁇ 10 ⁇ 6 /K.
  • the coefficient of thermal expansion is approximately 4.2 ⁇ 10 ⁇ 6 /K.
  • the second wiring 32 is formed of a material containing Cu, its coefficient of thermal expansion is approximately 16.5 ⁇ 10 ⁇ 6 /K. Therefore, the second submount substrate 220 is formed of a material with a coefficient of thermal expansion smaller than 16.5 ⁇ 10 ⁇ 6 /K.
  • the second submount substrate 220 is made of alumina. In this case, the thermal expansion coefficient of the second submount substrate 220 is approximately 7.2 ⁇ 10 ⁇ 6 /K. Further, the second submount substrate 220 may be made of aluminum nitride. In this case, the thermal expansion coefficient of the second submount substrate 220 is approximately 4.6 ⁇ 10 ⁇ 6 /K.
  • the second submount substrate 220 is formed into a flat plate shape with its thickness direction in the Z-axis direction.
  • the shape of the second submount substrate 220 in plan view is a square.
  • the second submount substrate 220 is formed to be one size larger than the top light emitting element 50 in plan view. Note that the shape of the second submount substrate 220 in plan view can be arbitrarily changed.
  • the thickness of the second submount substrate 220 is, for example, equal to the thickness of the first submount substrate 210. Note that the thickness of the second submount substrate 220 can be changed arbitrarily. In one example, the thickness of the second submount substrate 220 may be thinner than the thickness of the first submount substrate 210. Further, in one example, the thickness of the second submount substrate 220 may be thicker than the thickness of the first submount substrate 210.
  • the second submount substrate 220 has a second surface 221, a second back surface 222, and first to fourth side surfaces 223 to 226 that connect the second surface 221 and the second back surface 222. and has.
  • the second surface 221 faces the same side as the substrate front surface 21, and the second back surface 222 faces the same side as the substrate back surface 22.
  • the second back surface 222 faces the first wiring 31.
  • the first to fourth side surfaces 223 to 226 are surfaces that intersect both the second surface 221 and the second back surface 222.
  • each of the first to fourth side surfaces 223 to 226 is a surface perpendicular to the second surface 221 and the second back surface 222.
  • the first side surface 223 and the second side surface 224 constitute both end surfaces of the second submount substrate 220 in the Y-axis direction.
  • the first side surface 223 faces the same side as the first substrate side surface 23, and the second side surface 224 faces the same side as the second substrate side surface 24.
  • the third side surface 225 and the fourth side surface 226 constitute both end surfaces of the second submount substrate 220 in the X-axis direction.
  • the third side surface 225 faces the same side as the third substrate side surface 25, and the fourth side surface 226 faces the same side as the fourth substrate side surface 26.
  • the semiconductor light emitting device 10 includes a second front wiring 227 formed on the second surface 221 of the second submount substrate 220 and a second back wiring 228 formed on the second back surface 222. and a second via 229 that connects the second front side wiring 227 and the second back side wiring 228.
  • Each of the second front-side wiring 227 and the second back-side wiring 228 is formed of a material containing, for example, Cu.
  • the second via 229 is made of, for example, a material containing Cu.
  • the second front-side wiring 227 is formed into a rectangular shape that is one size smaller than the second submount substrate 220 in plan view.
  • the second back side wiring 228 is formed into a rectangular shape having the same size as the second front side wiring 227 in plan view.
  • a plurality of second vias 229 (six in the ninth embodiment) are provided, for example.
  • the plurality of second vias 229 are formed such that three rows of second vias 229 are arranged in a row and spaced apart from each other in the Y-axis direction, and two rows are spaced apart from each other in the X-axis direction.
  • each of the second front-side wiring 227 and the second back-side wiring 228 can be changed arbitrarily.
  • the area of the second front-side wiring 227 and the area of the second back-side wiring 228 may be different from each other in plan view.
  • the number of second vias 229 can be changed arbitrarily. In one example, there may be one second via 229.
  • the second submount substrate 220 is bonded to the second wiring 32 using a conductive bonding material SD. That is, the second submount substrate 220 is mounted on the second wiring 32.
  • the top light emitting element 50 is arranged at the center of the second submount substrate 220 in both the X-axis direction and the Y-axis direction.
  • the top light emitting element 50 is mounted on the second submount substrate 220. More specifically, the cathode electrode 55 of the top light emitting element 50 is bonded to the second surface wiring 227 of the second submount substrate 220 using a conductive bonding material SD. Thereby, the cathode electrode 55 is electrically connected to the second surface side wiring 227. Since the second front wiring 227 is electrically connected to the second back wiring 228 via the second via 229, the cathode electrode 55 is electrically connected to the second back wiring 228. Since the second back side wiring 228 is electrically connected to the second wiring 32 by the conductive bonding material SD, the cathode electrode 55 is electrically connected to the second wiring 32.
  • the first submount substrate 210, the side light emitting element 40, the second submount substrate 220, the top light emitting element 50, and the wires W1 and W2 are sealed with a sealing resin 60.
  • the first side surface 213 of the first submount substrate 210 is arranged inside the first sealing end surface 63 of the sealing resin 60 (closer to the side light emitting element 40).
  • the semiconductor light emitting device 10 does not include the first reflecting section 80 (see FIG. 5). That is, the laser light emitted from the first light emitting side surface LS1 of the side light emitting element 40 is emitted from the first sealing end surface 63 and the sealing surface 61 via the sealing resin 60.
  • the semiconductor light emitting device 10 includes a first submount substrate 210 that is interposed between the first wiring 31 and the side light emitting element 40 and electrically connects the first wiring 31 and the side light emitting element 40. Be prepared for more.
  • the first submount substrate 210 is made of a material having a coefficient of thermal expansion closer to that of the side light emitting element 40 than that of the first wiring 31.
  • the force applied to the side light emitting element 40 due to the difference in thermal expansion coefficient between the first wiring 31 and the side light emitting element 40 can be reduced. Therefore, it is possible to reduce the influence on the electrical characteristics of the side light emitting element 40 due to temperature changes.
  • the semiconductor light emitting device 10 includes a second submount substrate 220 that is interposed between the second wiring 32 and the top light emitting element 50 and electrically connects the second wiring 32 and the top light emitting element 50. Be prepared for more.
  • the second submount substrate 220 is made of a material having a coefficient of thermal expansion closer to that of the top light emitting element 50 than that of the second wiring 32.
  • the force applied to the top light emitting element 50 due to the difference in thermal expansion coefficient between the second wiring 32 and the top light emitting element 50 can be reduced. Therefore, it is possible to reduce the influence on the electrical characteristics of the top light emitting element 50 due to temperature changes.
  • the distance DB1 between the first submount board 210 and the first end surface 31A of the first wiring 31 in the Y-axis direction is the distance DB1 between the first submount board 210 and the second end surface 31B of the first wiring 31. is larger than the distance DB2 in the Y-axis direction.
  • the side light emitting element 40 can be further separated from the first sealed end surface 63. Therefore, the light emitted from the first light emitting side surface LS1 of the side light emitting element 40 is easily diffused (scattered) by the diffusion material 67 within the sealing resin 60. Therefore, the light emitted from the semiconductor light emitting device 10 has wider directivity.
  • a semiconductor light emitting device 10 according to a tenth embodiment will be described with reference to FIGS. 49 and 50.
  • the semiconductor light emitting device 10 of the tenth embodiment differs from the semiconductor light emitting device 10 of the first embodiment in that a diffuser 300 is added.
  • a diffuser 300 is added.
  • the semiconductor light emitting device 10 includes a diffuser 300.
  • the diffuser 300 serves to widen the directivity angle by diffusing the light emitted from the top light emitting element 50.
  • Diffuser 300 is placed on sealing surface 61 of sealing resin 60.
  • the diffuser 300 is provided partially relative to the sealing surface 61.
  • the diffuser 300 is provided so as to cover the top light emitting element 50. Note that the size of the diffuser 300 can be changed arbitrarily.
  • the diffuser 300 may be formed over the entirety of the sealing surface 61.
  • the semiconductor light emitting device 10 further includes a diffuser 300 that diffuses the light from the top light emitting element 50.
  • the light emitted from the light emitting upper surface 53 of the top light emitting element 50 is diffused when passing through the diffuser 300, so the light emitted from the semiconductor light emitting device 10 has wider directivity.
  • the semiconductor light emitting device 10 of the first to ninth embodiments may include the diffuser 300 of the tenth embodiment.
  • the semiconductor light emitting device 10 of the first to eighth and tenth embodiments may further include at least one of the first submount substrate 210 and the second submount substrate 220 of the ninth embodiment.
  • a reflective film 230 may be formed on the substrate surface 21 as a first reflective part 80.
  • the reflective film 230 is disposed closer to the first substrate side surface 23 than the first wiring 31 on the substrate surface 21 .
  • the reflective film 230 is arranged apart from the first wiring 31 in the Y-axis direction.
  • the reflective film 230 may be formed of a material containing Cu like the first wiring 31, or may be formed of a material different from the material of the first wiring 31 (for example, Al).
  • the reflective film 230 may be in an electrically floating state, for example.
  • the length of the first extending portion 31C of the first wiring 31 in the Y-axis direction is shorter than the length of the first extending portion 31C of the first embodiment in the Y-axis direction. Further, the first extending portion 31C may be omitted.
  • the thickness of the reflective film 230 is equal to the thickness of the first wiring 31. Note that the thickness of the reflective film 230 can be changed arbitrarily, and may be thicker than the thickness of the first wiring 31, for example.
  • the length of the reflective film 230 in the X-axis direction is equal to the length of the first wiring 31 in the X-axis direction. Note that the length of the reflective film 230 in the X-axis direction can be changed arbitrarily. The length of the reflective film 230 in the X-axis direction may be longer than the length of the first wiring 31 in the X-axis direction. Further, the length of the reflective film 230 in the X-axis direction may be shorter than the length of the first wiring 31 in the X-axis direction.
  • the length of the reflective film 230 in the X-axis direction is shorter than the length of the first wiring 31 in the X-axis direction, for example, the length of the reflective film 230 in the X-axis direction is equal to the length of the side light emitting element 40 in the X-axis direction. It is good if it is above.
  • the semiconductor light emitting device 10 may include a reflector 81 as the first reflecting section 80.
  • the reflector 81 is mounted on the first wiring 31. More specifically, the reflector 81 is mounted on a portion of the first wiring 31 closer to the first end surface 31A. At least a portion of the reflector 81 is covered with the sealing resin 60.
  • the reflector 81 is made of, for example, a metal material. As the metal material, for example, Al, Cu, or an alloy thereof can be used.
  • the reflector 81 extends in the X-axis direction.
  • the length of the reflector 81 in the X-axis direction is longer than the length of the side light emitting element 40 in the X-axis direction, for example.
  • the length of the reflector 81 in the X-axis direction is longer than the length of the first wiring 31 in the X-axis direction, for example.
  • both end surfaces of the reflector 81 in the X-axis direction are in contact with a pair of first side wall portions 71 of the side wall 70. Note that the length of the reflector 81 in the X-axis direction can be changed arbitrarily.
  • the reflector 81 has a bottom surface 82 facing the substrate surface 21 , a side surface 83 extending upward from the bottom surface 82 , and a reflective surface 84 connecting the bottom surface 82 and the side surface 83 .
  • the bottom surface 82 is a surface in contact with the adhesive, and is formed by a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20.
  • the side surface 83 extends upward from the edge of the bottom surface 82 in the Y-axis direction that is closer to the first substrate side surface 23 .
  • the reflective surface 84 connects the edge of the bottom surface 82 in the Y-axis direction that is farther from the first substrate side surface 23 and the upper edge of the side surface 83 .
  • the reflective surface 84 is an inclined surface that slopes upward toward the first substrate side surface 23 .
  • the angle of inclination of the reflective surface 84 is set according to the range of laser light emitted from the sealing resin 60. In one example, the angle of inclination of the reflective surface 84 is greater than 0° and less than 45°.
  • the inclination angle of the reflective surface 84 is an acute angle formed by the bottom surface 82 and the reflective surface 84.
  • the height dimension (size in the Z-axis direction) of the side surface 83 is equal to the thickness dimension (size in the Z-axis direction) of the side light emitting element 40. Therefore, when viewed from the Y-axis direction, the reflective surface 84 is formed to overlap the entire surface of the first light-emitting side surface LS1. Note that the height dimension of the side surface 83 can be changed arbitrarily. In one example, the height dimension of the side surface 83 may be smaller than the thickness dimension of the side light emitting element 40.
  • the position of the reflector 81 can be changed arbitrarily.
  • the reflector 81 may be disposed between the first light emitting side surface LS1 of the side light emitting element 40 and the first substrate side surface 23 of the substrate 20 in the Y-axis direction in plan view. good.
  • the reflector 81 may be arranged between the first light emitting side surface LS1 and the first sealing end surface 63 of the sealing resin 60 in the Y-axis direction in a plan view. That is, the reflector 81 may be entirely sealed with the sealing resin 60.
  • the reflector 81 may be arranged so that a portion thereof protrudes from the first substrate side surface 23. Further, the reflector 81 may be arranged such that a portion thereof protrudes from the first sealed end surface 63.
  • the reflector 81 may be mounted on the substrate surface 21 instead of the first wiring 31. In this case, reflector 81 is bonded to substrate surface 21 with an adhesive (not shown).
  • the height dimension of the reflector 81 (the size of the reflector 81 in the Z-axis direction) can be changed arbitrarily.
  • the height dimension of the reflector 81 may be smaller than the thickness of the side light emitting element 40 (the size of the side light emitting element 40 in the Z-axis direction).
  • the substrate 160 may have a reflector section 173.
  • the reflector section 173 is formed on the bottom wall section 171.
  • the reflector portion 173 may be formed integrally with the bottom wall portion 171.
  • the reflector section 173 is made of, for example, black epoxy resin, like the bottom wall section 171.
  • the reflector portion 173 is provided closer to the first substrate side surface 23 than the side light emitting element 40 .
  • the reflector portion 173 is provided closer to the first substrate side surface 23 than the first wiring 31 .
  • the reflector portion 173 has an inclined surface 173A.
  • the inclined surface 173A is inclined upward toward the first substrate side surface 23.
  • a reflective film 174 is formed on the inclined surface 173A.
  • the reflective film 174 is formed of, for example, a metal film. Examples of the metal film include a Cu film and an Al film. In this way, the first reflective section 80 is configured by the reflector section 173 and the reflective film 174.
  • the length of the first submount substrate 210 in the Y-axis direction may be increased.
  • the side light emitting element 40 is arranged closer to the second side surface 214 with respect to the first submount substrate 210 in plan view. That is, in a plan view, the distance between the first light emitting side surface LS1 of the side light emitting element 40 and the first side surface 213 of the first submount substrate 210 in the Y-axis direction is the second element side surface 44 of the side light emitting element 40 ( It is larger than the distance between the second light emitting side surface LS2) and the second side surface 214 of the first submount substrate 210 in the Y-axis direction.
  • the first surface-side wiring 217 can have a long first extension portion 217A extending from the first light-emitting side surface LS1 to the first side surface 213 in plan view.
  • the first extending portion 217A constitutes the first reflecting portion 80.
  • the first surface-side wiring 217 has a portion (first extension portion 217A) extending from the first light emitting side surface LS1 toward the first sealing end surface 63 as the first reflection portion 80.
  • the first surface side wiring 217 corresponds to the "connection wiring".
  • the semiconductor light emitting device 10 may include a reflector 81 as the first reflecting section 80.
  • the reflector 81 may be mounted on the first surface 211 of the first submount substrate 210, for example. Further, the reflector 81 may be mounted, for example, on the first surface wiring 217 of the first submount substrate 210.
  • the semiconductor light emitting device 10 may include a reflective film formed on the first surface 211 of the first submount substrate 210 as the first reflective section 80.
  • the reflective film is formed of a metal film such as a Cu film or an Al film.
  • the reflective film is arranged closer to the first side surface 213 than the first surface side wiring 217, for example.
  • the reflective film is, for example, in an electrically floating state.
  • the first reflecting section 80 may be omitted from the semiconductor light emitting device 10. More specifically, the first extension portion 31C of the first wiring 31 may be formed such that the laser light directed toward the substrate surface 21 out of the laser light from the side light emitting element 40 does not hit the first extension portion 31C. Alternatively, the first extending portion 31C may be omitted from the first wiring 31. In this case, the laser light directed toward the substrate surface 21 out of the laser light from the side light emitting element 40 may be emitted from the first sealing end surface 63 of the sealing resin 60 without being reflected on the substrate surface 21 .
  • the distance D2 in the X-axis direction from the second light-emitting side surface LS2 of the side light-emitting element 40 to the second end surface 31B of the first wiring 31 is the distance D2 in the X-axis direction from the first light-emitting side surface LS1 to the first end surface 31A of the first wiring 31. It is equal to the distance D1 in the direction.
  • FIG. 58 shows a schematic cross-sectional structure of the semiconductor light emitting device 10, schematically showing the region of light emitted from the semiconductor light emitting device 10. In FIG. 58, areas of light are shown with dots.
  • the second laser light emitted from the second light emitting side surface LS2 of the side light emitting element 40 is diffused (scattered) by the diffusing material 67.
  • the second laser light includes laser light directed toward the substrate surface 21.
  • the second extension 31D of the first wiring 31 reflects at least a portion of the laser beam directed toward the substrate surface 21.
  • the reflected laser light passes through the second sealing end face 64 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 .
  • the semiconductor light emitting device 10 can be said to include the second reflecting section 90 that reflects at least a portion of the laser light emitted from the second light emitting side surface LS2 of the side light emitting element 40 and directed toward the substrate surface 21.
  • the second extending portion 31D of the first wiring 31 constitutes the second reflecting portion 90.
  • the laser light directed toward the substrate surface 21 is also reflected by the second wiring 32 .
  • the reflected laser light passes through the second sealing end face 64 or the sealing surface 61 and is emitted to the outside of the semiconductor light emitting device 10 . Therefore, it can be said that the second wiring 32 also constitutes the second reflection section 90.
  • a reflective film 240 may be formed on the substrate surface 21 between the first wiring 31 and the second wiring 32 in the Y-axis direction.
  • the reflective film 240 may be formed of a material containing Cu similarly to the first wiring 31 and the second wiring 32, or may be formed of a material different from the material of the first wiring 31 and the second wiring 32 (for example, Al). may be done.
  • the reflective film 240 may be in an electrically floating state, for example.
  • the area of the reflective film 240 in plan view is larger than the area of the second wiring 32 and smaller than the area of the first wiring 31. More specifically, the length of the reflective film 240 in the X-axis direction is greater than the length of the second wiring 32 in the X-axis direction and equal to the length of the first wiring 31 in the X-axis direction. The length of the reflective film 240 in the Y-axis direction is shorter than the length of the first wiring 31 in the Y-axis direction, and is equal to the length of the second wiring 32 in the Y-axis direction.
  • the length of the reflective film 240 in the X-axis direction can be changed arbitrarily.
  • the length of the reflective film 240 in the X-axis direction may be longer than the length of the first wiring 31 in the X-axis direction.
  • the length of the reflective film 240 in the X-axis direction may be shorter than the length of the first wiring 31 in the X-axis direction.
  • the length of the reflective film 240 in the X-axis direction may be equal to or less than the length of the second wiring 32 in the X-axis direction.
  • the length of the reflective film 240 in the X-axis direction is preferably equal to or longer than the length of the side light emitting element 40 in the X-axis direction.
  • the length of the reflective film 240 in the Y-axis direction can be changed arbitrarily.
  • the length of the reflective film 240 in the Y-axis direction may be longer than the length of the second wiring 32 in the Y-axis direction.
  • the length of the reflective film 240 in the Y-axis direction may be shorter than the length of the second wiring 32 in the Y-axis direction.
  • a reflector 250 as the second reflection section 90 may be arranged between the first wiring 31 and the second wiring 32 in the Y-axis direction.
  • Reflector 250 is placed on substrate 20 .
  • reflector 250 is placed on substrate surface 21.
  • the reflector 250 is not limited to being disposed on the substrate surface 21, but may be disposed on the first wiring 31 (second extension portion 31D).
  • the reflector 250 is made of a metal material such as Cu or Al. Reflector 250 is bonded to substrate surface 21 by, for example, an adhesive.
  • the reflector 250 is sealed with a sealing resin 60.
  • the reflector 250 has a bottom surface 251 facing the substrate surface 21 , a side surface 252 extending upward from the bottom surface 251 , and a reflective surface 253 connecting the bottom surface 251 and the side surface 252 .
  • the bottom surface 251 is a surface in contact with the adhesive, and is formed by a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20.
  • the side surface 252 extends upward from the edge of the bottom surface 251 in the Y-axis direction that is closer to the second substrate side surface 24 .
  • the reflective surface 253 connects the edge of the bottom surface 251 in the Y-axis direction that is closer to the first wiring 31 and the upper edge of the side surface 252 .
  • the reflective surface 253 is an inclined surface that slopes upward toward the second substrate side surface 24 (as it moves away from the first wiring 31).
  • the angle of inclination of the reflective surface 253 is set according to the range of laser light emitted from the sealing resin 60.
  • the inclination angle of the reflective surface 253 is greater than 0° and less than 45°.
  • the inclination angle of the reflective surface 253 is an acute angle formed by the bottom surface 251 and the reflective surface 253.
  • the height dimension (size in the Z-axis direction) of the side surface 252 is equal to the thickness dimension (size in the Z-axis direction) of the side light emitting element 40. Therefore, when viewed from the Y-axis direction, the reflective surface 253 is formed to overlap the entire surface of the first light-emitting side surface LS1. Note that the height dimension of the side surface 252 can be changed arbitrarily. In one example, the height dimension of the side surface 252 may be smaller than the thickness dimension of the side light emitting element 40.
  • the substrate 160 may have a reflector section 175.
  • the reflector section 175 is formed on the bottom wall section 171.
  • the reflector portion 175 may be formed integrally with the bottom wall portion 171.
  • the reflector portion 175 is made of, for example, black epoxy resin, like the bottom wall portion 171.
  • the reflector section 175 is arranged closer to the second substrate side surface 24 than the side light emitting element 40 .
  • the reflector section 175 is provided between the first wiring 31 and the second wiring 32.
  • the reflector portion 175 has an inclined surface 175A.
  • the inclined surface 175A is inclined upward toward the second substrate side surface 24.
  • a reflective film 176 is formed on the inclined surface 175A.
  • the reflective film 176 is formed of, for example, a metal film. Examples of the metal film include a Cu film and an Al film. In this way, the second reflective section 90 is configured by the reflector section 175 and the reflective film 176.
  • the length of the first submount substrate 210 in the Y-axis direction may be increased.
  • the side light emitting element 40 is arranged at the center of the first submount substrate 210 in the Y-axis direction in plan view. That is, in plan view, the distance between the first light emitting side surface LS1 of the side light emitting element 40 and the first side surface 213 of the first submount board 210 in the Y-axis direction is the same as the distance between the second light emitting side surface LS2 of the side light emitting element 40 It is equal to the distance between the first submount substrate 210 and the second side surface 214 in the Y-axis direction.
  • the first surface side wiring 217 has a first extending portion 217A extending from the first light emitting side surface LS1 to the first side surface 213 and a second extending portion extending from the second light emitting side surface LS2 to the second side surface 214 in plan view. Both portions 217B can be made longer.
  • the first extending portion 217A constitutes the first reflecting portion 80
  • the second extending portion 217B constitutes the second reflecting portion 90. That is, it can be said that the first surface-side wiring 217 has a portion (second extending portion 217B) extending from the second light emitting side surface LS2 toward the second sealing end surface 64 as the second reflecting portion 90.
  • the first surface side wiring 217 corresponds to the "connection wiring".
  • the semiconductor light emitting device 10 may include a reflector 250 as the second reflecting section 90.
  • the reflector 250 may be mounted on the first surface 211 of the first submount substrate 210, for example. Further, the reflector 250 may be mounted, for example, on the first surface wiring 217 of the first submount substrate 210.
  • the semiconductor light emitting device 10 may include a reflective film formed on the first surface 211 of the first submount substrate 210 as the second reflective section 90.
  • the reflective film is formed of a metal film such as a Cu film or an Al film.
  • the reflective film is arranged closer to the second side surface 214 than the first surface side wiring 217, for example.
  • the reflective film is, for example, in an electrically floating state.
  • the configuration of the first reflective section 80 (80A to 80H, 80P, 80Q) is determined by any of the first extension section 31C (101C to 101H, 31PC, 31QC) of the first wiring 31, the reflector 81, the reflective film, and the resist. You may also use one.
  • the second reflecting section 90 (90P, 90Q) may be configured using any one of the second extending section 31D (31PD, 31QD) of the first wiring 31, a reflector, and a reflective film. Therefore, the configuration of the first reflecting section 80 (80A to 80H, 80P, 80Q) and the configuration of the second reflecting section 90 (90P, 90Q) may be different from each other.
  • the arrangement relationship between the side light emitting element 40 and the top light emitting element 50 can be changed arbitrarily.
  • the top light emitting element 50 is arranged at a distance from the side light emitting element 40 in a direction intersecting the direction (first direction) in which the first light emitting side surface LS1 of the side light emitting element 40 faces in plan view. You can. In one example, as shown in FIG.
  • the top light emitting element 50 It is placed at a distance from the In other words, the side light emitting element 40 and the top light emitting element 50 are arranged spaced apart from each other. In this case, the first wiring 31 and the second wiring 32 are also arranged apart from each other in the X-axis direction.
  • the third wiring 33 is arranged closer to the second substrate side surface 24 (second sealing end surface 64) than both the first wiring 31 and the second wiring 32. In the illustrated example, the third wiring 33 is arranged closer to the second substrate side surface 24 than both the first wiring 31 and the second wiring 32.
  • the third wiring 33 is arranged closer to the top light emitting element 50 than the side light emitting element 40 and closer to the side light emitting element 40 than the top light emitting element 50 in the X-axis direction.
  • the top light emitting element 50 is arranged at a position overlapping the side light emitting element 40 when viewed from the X-axis direction.
  • the top light emitting element 50 is arranged closer to the second substrate side surface 24 (second sealed end surface 64) with respect to the side light emitting element 40 in the Y-axis direction. That is, the center of the top light emitting element 50 in the Y-axis direction is located closer to the second substrate side surface 24 (second sealed end surface 64) than the center of the side light emitting element 40 in the Y-axis direction.
  • the side light emitting element 40 is arranged closer to the second end surface 31B with respect to the first wiring 31. That is, the center of the side light emitting element 40 in the Y-axis direction is located closer to the second end surface 31B than the center of the first wiring 31 in the Y-axis direction. Therefore, the first wiring 31 includes the first extending portion 31C as the first reflecting portion 80. Note that in the illustrated modification, the first reflecting section 80 may be omitted from the semiconductor light emitting device 10.
  • the arrangement relationship between the side light emitting element 40 and the top light emitting element 50 can be changed arbitrarily.
  • the top light emitting element 50 is arranged at a distance from the side light emitting element 40 in a direction intersecting the direction (first direction) in which the first light emitting side surface LS1 of the side light emitting element 40 faces in plan view. You can. In one example, as shown in FIG.
  • the top light emitting element 50 It is placed at a distance from the In other words, the side light emitting element 40 and the top light emitting element 50 may be arranged apart from each other.
  • the first wiring 31 and the second wiring 32 are also arranged apart from each other in the X-axis direction.
  • the third wiring 33 is arranged closer to the second substrate side surface 24 (second sealing end surface 64) than the second wiring 32.
  • the third wiring 33 is arranged at a position overlapping the second end surface 31B of the first wiring 31 when viewed from the X-axis direction.
  • the third wiring 33 is arranged closer to the fourth substrate side surface 26 (fourth sealed end surface 66) than the first wiring 31.
  • the top light emitting element 50 is arranged at a position overlapping the side light emitting element 40 when viewed from the X-axis direction.
  • the center of the top light emitting element 50 in the Y axis direction approximately coincides with the center of the side light emitting element 40 in the Y axis direction. Note that the position of the top light emitting element 50 in the Y-axis direction can be changed arbitrarily.
  • the length of the first wiring 31 in the Y-axis direction is longer than the length of the side light emitting element 40 in the Y-axis direction.
  • the first wiring 31 has a first extending portion 31C as a first reflecting portion 80 and a second extending portion 31D as a second reflecting portion 90. Note that in the illustrated modification, at least one of the first reflecting section 80 and the second reflecting section 90 may be omitted from the semiconductor light emitting device 10.
  • the arrangement relationship among the first side light emitting element 40A, the second side light emitting element 40B, and the top light emitting element 50 can be changed arbitrarily.
  • the top light emitting element 50 is arranged at a distance from the side light emitting element 40 in a direction intersecting the direction (first direction) in which the first light emitting side surface LS1 of the side light emitting element 40 faces in plan view. You can. In one example, as shown in FIG.
  • the top light emitting element 50 in a direction (-X direction) perpendicular to the direction (+Y direction) in which the first light emitting side surface LS1 of the side light emitting element 40 faces in plan view, the top light emitting element 50 It is placed at a distance from the In other words, in the direction (X-axis direction) perpendicular to the arrangement direction (Y-axis direction) of the first light-emitting side surface LS1 and the second light-emitting side surface LS2 of the first side-light emitting element 40A in plan view, the first side light-emitting element 40A and The top light emitting elements 50 may be arranged apart from each other.
  • the first wiring 31P and the second wiring 32 are also arranged apart from each other in the X-axis direction.
  • the third wiring 33 is arranged closer to the second substrate side surface 24 (second sealing end surface 64) than the second wiring 32.
  • the third wiring 33 is arranged at a position overlapping the second end surface 31PB of the first wiring 31P when viewed from the X-axis direction.
  • the third wiring 33 is arranged closer to the fourth substrate side surface 26 (fourth sealed end surface 66) than the first wiring 31P.
  • the first wiring 31Q is arranged closer to the second substrate side surface 24 (second sealed end surface 64) than the first wiring 31P.
  • the shape of the first wiring 31Q in a plan view is a rectangular shape in which the X-axis direction is the longitudinal direction and the Y-axis direction is the lateral direction, similarly to the fifth embodiment.
  • Each of the first wiring 31P, the second wiring 32, and the third wiring 33 is arranged at a position overlapping the first wiring 31Q when viewed from the Y-axis direction.
  • the first wiring 31Q is arranged adjacent to the first wiring 31P and the third wiring 33 in the Y-axis direction.
  • the top light emitting element 50 is arranged at a position overlapping the first side light emitting element 40A when viewed from the X-axis direction.
  • the center of the top light emitting element 50 in the Y axis direction approximately coincides with the center of the first side light emitting element 40A in the Y axis direction. Note that the position of the top light emitting element 50 in the Y-axis direction can be changed arbitrarily.
  • the length of the first wiring 31P in the Y-axis direction is longer than the length of the first side light emitting element 40A in the Y-axis direction.
  • the first wiring 31P includes a first extending portion 31PC as a first reflecting portion 80P and a second extending portion 31PD as a second reflecting portion 90P. Note that in the illustrated modification, at least one of the first reflecting section 80P and the second reflecting section 90P may be omitted from the semiconductor light emitting device 10.
  • the length of the first wiring 31Q in the X-axis direction is longer than the length of the second side light emitting element 40B in the X-axis direction.
  • the first wiring 31Q has a first extending portion 31QC as a first reflecting portion 80Q and a second extending portion 31QD as a second reflecting portion 90Q. Note that in the illustrated modification, at least one of the first reflecting section 80Q and the second reflecting section 90Q may be omitted from the semiconductor light emitting device 10.
  • the shape of the side light emitting elements 40 (40A to 40H) in plan view can be arbitrarily changed.
  • the shape of the side light emitting elements 40 (40A to 40H) in plan view may be square, or may be rectangular with the Y-axis direction being the short direction and the X-axis direction being the long direction. .
  • the semiconductor light emitting device 10 may include a plurality of side light emitting elements 40.
  • the semiconductor light emitting device 10 includes three side light emitting elements 40P, 40Q, and 40R. These side light emitting elements 40P, 40Q, and 40R are arranged apart from each other in the X-axis direction. In other words, the plurality of side light emitting elements 40P, 40Q, 40R are arranged in a line in a direction perpendicular to the direction of laser light emission from each side light emitting element 40P, 40Q, 40R in plan view.
  • the side light emitting elements 40P, 40Q, and 40R may be configured such that the wavelengths of the laser beams of the side light emitting elements 40P, 40Q, and 40R are different from each other.
  • the side light emitting element 40P is configured to emit red laser light
  • the side light emitting element 40Q is configured to emit green laser light
  • the side light emitting element 40R is configured to emit blue laser light. ing.
  • the side light emitting element 40P is electrically connected to the third wiring 33 by a wire W1p.
  • the side light emitting element 40Q is electrically connected to the third wiring 33 by a wire W1q.
  • the side light emitting element 40R is electrically connected to the third wiring 33 by a wire W1r.
  • a plurality of third wirings 33 may be provided.
  • two third interconnections 33 may be distributed and arranged on both sides of the second interconnection 32 in the X-axis direction in a plan view.
  • the wire W1r connected to the side light emitting element 40R is connected to the third wiring 33 closer to the third substrate side surface 25 than the second wiring 32.
  • the side light emitting elements 40 are not limited to semiconductor laser elements.
  • the side light emitting elements 40 may be LED elements.
  • some of the plurality of side light emitting elements 40 may be semiconductor laser elements, and the remaining parts may be LED elements.
  • the side light emitting element 40 may include a plurality of light emitting parts.
  • the plurality of light emitting parts are arranged side by side along the light emitting side surface.
  • the side light emitting elements 40 in plan view, may have a longitudinal direction in which the light emitting side surface extends, and a transverse direction in a direction orthogonal to the direction in which the light emitting side surface extends.
  • the semiconductor light emitting device 10 may include a plurality of top light emitting elements 50.
  • the shape of the substrate 20 in plan view is such that the X-axis direction is the longitudinal direction, and the Y-axis direction is the longitudinal direction. It may have a rectangular shape with the transverse direction.
  • the semiconductor light emitting device 10 when the semiconductor light emitting device 10 includes a plurality of top light emitting elements 50, the plurality of top light emitting elements 50 may be mounted on a common second submount substrate 220. Further, the plurality of top light emitting elements 50 may be individually mounted on the plurality of second submount substrates 220. Some of the top light emitting elements 50 among the plurality of top light emitting elements 50 may be mounted on the second wiring 32 instead of the second submount substrate 220.
  • the electrical connection structure between the wiring formed on the front surface 21 of the substrate and the electrode formed on the back surface 22 of the substrate is not limited to vias, but may be any arbitrary structure. Can be changed.
  • the wiring and the electrode may be electrically connected by a side electrode formed on the side surface of the substrate.
  • the semiconductor light emitting device 10 includes a first side electrode 261, a second side electrode 262, and a third side electrode (not shown).
  • the first side electrode 261 is formed on the first substrate side surface 23
  • the second side electrode 262 is formed on the second substrate side surface 24
  • the third side electrode is formed on the fourth substrate side surface 26 (not shown in FIG. 68). ing.
  • the first side electrode 261 electrically connects the first wiring 31 and the first electrode 34.
  • both the first wiring 31 and the first electrode 34 are formed at the same position as the first substrate side surface 23 in plan view.
  • the first side electrode 261 is connected to both the first wiring 31 and the first electrode 34.
  • the second side electrode 262 electrically connects the second wiring 32 and the second electrode 35.
  • both the second wiring 32 and the second electrode 35 are formed at the same position as the second substrate side surface 24 in plan view.
  • the second side electrode 262 is connected to both the second wiring 32 and the second electrode 35.
  • the third side electrode electrically connects the third wiring 33 and the third electrode 36. Both the third wiring 33 and the third electrode 36 are formed at the same position as the fourth substrate side surface 26 in plan view. The third side electrode is connected to both the third wiring 33 and the third electrode 36.
  • the solder paste SP when the semiconductor light emitting device 10 is mounted on the circuit board PCB using the solder paste SP, the solder paste SP includes the first electrode 34, the second electrode 35, and the third electrode 36 (not shown in FIG. 69). ), are formed so as to be in contact with the first side electrode 261, the second side electrode 262, and the third side electrode.
  • the solder paste SP forms a fillet SPA on both the first substrate side surface 23 and the second substrate side surface 24 by the first side surface electrode 261 and the second side surface electrode 262.
  • the solder paste SP forms a fillet on the fourth substrate side surface 26 by the third side electrode.
  • a fillet SPA is formed by the first side electrode 261 and the second side electrode 262. Therefore, the operator can visually confirm the mounting state of the semiconductor light emitting device 10 on the circuit board PCB based on the fillet SPA.
  • the heat dissipation performance of the semiconductor light emitting device 10 can be improved.
  • the height of the fillet SPA formed by the first side electrode 261 and the second side electrode 262 can be increased, so that the operator can This makes it easier to visually confirm the mounting state of the semiconductor light emitting device 10 on the circuit board PCB.
  • the length of the first side electrode 261 in the X-axis direction and the length of the second side electrode 262 in the X-axis direction can be changed arbitrarily. Further, each of the length of the first side electrode 261 in the Z-axis direction and the length of the second side electrode 262 in the Z-axis direction can be changed arbitrarily.
  • the length of the first side electrode 261 in the Z-axis direction may be shorter than the length of the first substrate side surface 23 in the Z-axis direction, that is, the thickness of the substrate 20. In this case, the first side electrode 261 is not connected to the first wiring 31.
  • the length of the second side surface electrode 262 in the Z-axis direction may be shorter than the length of the second substrate side surface 24 in the Z-axis direction, that is, the thickness of the substrate 20. In this case, the second side electrode 262 is not connected to the second wiring 32.
  • the position of the first end surface 31A of the first wiring 31 can be changed arbitrarily.
  • the first end surface 31A may be located inside the first substrate side surface 23 (closer to the second substrate side surface 24). In this case, the first wiring 31 is not connected to the first side electrode 261.
  • the position of the first end surface which is the end surface closer to the second substrate side surface 24 of both end surfaces of the second wiring 32 in the Y-axis direction, can be arbitrarily changed.
  • the first end surface of the second wiring 32 may be located inside the second substrate side surface 24 (closer to the first substrate side surface 23). In this case, the second wiring 32 is not connected to the second side electrode 262.
  • each of the number of first side electrodes 261 and the number of second side electrodes 262 can be changed arbitrarily.
  • a plurality of first side electrodes 261 may be provided spaced apart from each other in the X-axis direction.
  • a plurality of second side electrodes 262 may be provided spaced apart from each other in the X-axis direction.
  • each of the first side electrode 261 and the second side electrode 262 may have any configuration as long as it can form a fillet SPA of the solder paste SP.
  • the semiconductor light emitting device 10 includes first side electrodes 261P and 261Q.
  • the first side electrode 261P is formed on the first substrate side surface 23, and the first side electrode 261Q is formed on the second substrate side surface 24.
  • the first side electrode 261P electrically connects the first wiring 31P and the first electrode 34P.
  • both the first wiring 31P and the first electrode 34P are formed at the same position as the first substrate side surface 23 in plan view.
  • the first side electrode 261P is connected to both the first wiring 31P and the first electrode 34P.
  • the first side electrode 261Q electrically connects the first wiring 31Q and the first electrode 34Q.
  • both the first wiring 31Q and the first electrode 34Q are formed at the same position as the second substrate side surface 24 in plan view.
  • the first side electrode 261Q is connected to both the first wiring 31Q and the first electrode 34Q.
  • first side electrodes 261P and 261Q in the X-axis direction and the length in the Z-axis direction can be changed arbitrarily, similarly to the first side electrode 261 in FIG. 69.
  • the first side electrode 261P may not be connected to the first wiring 31P, and the first side electrode 261Q may not be connected to the first wiring 31Q.
  • the semiconductor light emitting device 10 may include an end surface through hole formed on the side surface of the substrate 20.
  • the first end surface through hole 271 is formed in the first substrate side surface 23.
  • the second end surface through hole 272 is formed in the second substrate side surface 24.
  • the first end surface through hole 271 is formed in a curved concave shape recessed from the first substrate side surface 23 toward the second substrate side surface 24 in plan view.
  • the first end surface through hole 271 electrically connects the first wiring 31 and the first electrode 34.
  • the second end surface through hole 272 is formed in a curved concave shape recessed from the second substrate side surface 24 toward the first substrate side surface 23 in plan view.
  • the second end surface through hole 272 electrically connects the second wiring 32 and the second electrode 35.
  • Both the first end surface through hole 271 and the second end surface through hole 272 are formed of a material containing, for example, Cu. Note that, as shown in FIG. 71, when the first end surface through hole 271 is formed, the first via 37 (see FIG. 3) may be omitted. When the second end surface through hole 272 is formed, the second via 38 (see FIG. 3) may be omitted.
  • the semiconductor light emitting device 10 includes a resist 273 that covers the first end surface through hole 271.
  • a resist 273 is provided on the substrate surface 21.
  • a portion of the resist 273 is provided on the first wiring 31.
  • the resist 273 is made of, for example, an insulating material.
  • the second end surface through hole 272 is covered by the side wall 70.
  • the heat of the first wiring 31 moves to the first electrode 34 via the first end surface through hole 271.
  • the heat of the first wiring 31 is radiated to the outside of the semiconductor light emitting device 10 through the first end surface through hole 271. Therefore, the heat dissipation performance of the semiconductor light emitting device 10 can be improved.
  • a fillet SPA (not shown) is formed by the first end surface through hole 271. Therefore, the operator can visually confirm the mounting state of the semiconductor light emitting device 10 on the circuit board PCB.
  • the semiconductor light emitting device 10 includes the resist 273 that covers the first end surface through hole 271, it is possible to suppress the fillet SPA formed by the first end surface through hole 271 from protruding from the substrate surface 21.
  • the resist 273 may be formed of a material having a higher reflectance than the substrate 20. According to this configuration, the resist 273 can constitute the first reflecting section 80.
  • the position and number of the first end surface through holes 271 relative to the substrate 20 can be changed as desired.
  • the first end surface through hole 271 may be formed closer to the third substrate side surface 25 or the fourth substrate side surface 26 than the side light emitting element 40 is. That is, the first end surface through hole 271 may be formed at a position that does not overlap with the side light emitting element 40 when viewed from the Y-axis direction.
  • a plurality of first end surface through holes 271 may be provided.
  • the position and number of the second end surface through holes 272 relative to the substrate 20 can be changed arbitrarily. In one example, a plurality of second end surface through holes 272 may be provided.
  • the shape of the sealing resin 60 is not limited to a rectangular parallelepiped, and can be arbitrarily changed.
  • the first sealing end surface 63 may be an inclined surface that slopes toward the second substrate side surface 24 as the distance from the substrate surface 21 increases.
  • the second sealing end surface 64 may be an inclined surface that is inclined toward the first substrate side surface 23 as the second sealing end surface 64 moves away from the substrate surface 21 .
  • the third sealing end surface 65 may be an inclined surface that is inclined toward the fourth substrate side surface 26 as the third sealing end surface 65 moves away from the substrate surface 21 .
  • the fourth sealing end surface 66 may be an inclined surface that is inclined toward the third substrate side surface 25 as the fourth sealing end surface 66 moves away from the substrate surface 21 .
  • the sealing surface 61 may be formed as a spherical surface that curves upward toward the center of the substrate surface 21. Furthermore, the sealing surface 61 may be formed as a curved surface that becomes upwardly curved and convex toward the center of the substrate surface 21 in the Y-axis direction. Furthermore, the sealing resin 60 may be formed in a hemispherical shape that is curved and convex upward from the substrate surface 21.
  • the position of the first sealed end surface 63 in the Y-axis direction can be changed arbitrarily.
  • the first sealed end surface 63 may be located inside the first substrate side surface 23 (closer to the top light emitting element 50).
  • the position of the second sealing end surface 64 in the Y-axis direction can be changed arbitrarily.
  • the second sealed end surface 64 may be located inside the second substrate side surface 24 (closer to the top light emitting element 50).
  • the positions of each of the third sealed end surface 65 and the fourth sealed end surface 66 in the X-axis direction can be changed arbitrarily.
  • the third sealed end surface 65 may be located inside the third substrate side surface 25 (closer to the top light emitting element 50).
  • the fourth sealed end surface 66 may be located inside the fourth substrate side surface 26 (closer to the top light emitting element 50).
  • the sealing resin 60 may include a phosphor 280 mixed in the resin in addition to the diffusion material 67.
  • the side light emitting element 40 may be configured to emit blue laser light.
  • the phosphor 280 may be configured to absorb blue laser light and emit yellow light. In this way, white laser light can be emitted to the outside of the semiconductor light emitting device 10 using the blue laser light and the phosphor 280 that emits yellow light. Note that the configuration of the phosphor 280 can be changed arbitrarily, and may be configured to absorb light and emit infrared light.
  • the diffusion material 67 may be omitted from the sealing resin 60.
  • the sealing resin 60 may include the fluorescent material 280 without the diffusion material 67. Further, in each embodiment, the sealing resin 60 may be omitted from the semiconductor light emitting device 10.
  • the first sealing end surface 63 may be, for example, a mirror-finished smooth surface.
  • the arithmetic mean roughness (Ra) of the first sealing end surface 63 is smaller than the arithmetic mean roughness (Ra) of the sealing surface 61.
  • both the first sealed end surface 63 and the second sealed end surface 64 may be mirror-finished smooth surfaces, for example.
  • the arithmetic mean roughness (Ra) of both the first sealing end surface 63 and the second sealing end surface 64 is smaller than the arithmetic mean roughness (Ra) of the sealing surface 61.
  • each of the first sealed end surface 63, the third sealed end surface 65, and the fourth sealed end surface 66 may be a mirror-finished smooth surface, for example.
  • the arithmetic mean roughness (Ra) of each of the first sealing end surface 63, the third sealing end surface 65, and the fourth sealing end surface 66 is greater than the arithmetic mean roughness (Ra) of the sealing surface 61. It's also small.
  • each of the first to fourth sealing end surfaces 63 to 66 may be, for example, a mirror-finished smooth surface.
  • the arithmetic mean roughness (Ra) of each of the first to fourth sealing end surfaces 63 to 66 is smaller than the arithmetic mean roughness (Ra) of the sealing surface 61.
  • the materials of each of the first submount substrate 210 and the second submount substrate 220 can be changed arbitrarily.
  • at least one of the first submount substrate 210 and the second submount substrate 220 may be formed of a Si substrate.
  • the thermal expansion coefficient of the Si substrate is approximately 4.2 ⁇ 10 ⁇ 6 /K.
  • at least one of the first submount substrate 210 and the second submount substrate 220 may be formed of glass epoxy resin like the substrate 20. In this way, the first submount substrate 210 and the second submount substrate 220 may be made of different materials.
  • the semiconductor light emitting device 10 has the first submount substrate 210 in its thickness direction (Z-axis
  • the first conductive portion may be provided so as to penetrate in the direction (direction).
  • a side light emitting element 40 is mounted on a surface of the first conductive portion exposed from the first surface 211 of the first submount substrate 210 using a conductive bonding material SD.
  • a surface of the first conductive portion exposed from the first back surface 212 of the first submount substrate 210 is bonded to the first wiring 31 using a conductive bonding material SD.
  • the second submount substrate 220 may also include a second conductive portion instead of the second front side wiring 227, the second back side wiring 228, and the second via 229.
  • the top light emitting element 50 is mounted on the surface of the second conductive portion exposed from the second surface 221 using the conductive bonding material SD.
  • a surface of the second conductive portion exposed from the second back surface 222 is bonded to the second wiring 32 with a conductive bonding material SD.
  • the structure that covers the side light emitting element 40 and the top light emitting element 50 is not limited to the sealing resin 60 and the side wall 70, and can be arbitrarily changed.
  • the semiconductor light emitting device 10 may include a case 290 that accommodates the side light emitting element 40 and the top light emitting element 50 in cooperation with the substrate 20.
  • the sealing resin 60 may be omitted.
  • Case 290 is attached, for example, to the substrate surface 21 with an adhesive (not shown).
  • Case 290 is made of, for example, a resin material having light-shielding properties.
  • Case 290 includes a top wall section 291 and a side wall section 292.
  • the top wall portion 291 and the side wall portion 292 are, for example, integrally formed.
  • the top wall portion 291 is formed to cover the substrate surface 21 from above.
  • a top opening 293 is formed in the top wall 291 .
  • the top opening 293 is formed to expose the top light emitting element 50 in plan view.
  • the top opening 293 is a through hole that penetrates the top wall 291 in the Z-axis direction. The light emitted by the top light emitting element 50 in the +Z direction is emitted to the outside of the semiconductor light emitting device 10 through the top opening 293.
  • the side wall portion 292 is formed to surround the side light emitting element 40 and the top light emitting element 50 in plan view.
  • a side opening 294 is formed in the side wall 292 .
  • the side opening 294 is formed so that at least the first light emitting side LS1 of the side light emitting element 40 is exposed when viewed from the Y-axis direction.
  • the laser light emitted by the side light emitting element 40 in the +Y direction is emitted to the outside of the semiconductor light emitting device 10 through the side opening 294.
  • the term “on” includes the meanings of “on” and “over” unless the context clearly dictates otherwise. Therefore, the expression “A is formed on B” means that in each of the above embodiments, A can be placed directly on B by contacting B, but as a modification, A can be placed directly on B without contacting B. It is contemplated that it may be placed above the. That is, the term “on” does not exclude structures in which other members are formed between A and B.
  • the Z-axis direction used in the present disclosure does not necessarily need to be a vertical direction, nor does it need to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure are not limited to the "upper” and “lower” in the Z-axis direction described herein being “upper” and “lower” in the vertical direction.
  • the X-axis direction may be a vertical direction
  • the Y-axis direction may be a vertical direction.
  • the side light emitting element (40) is arranged with the light emitting side surface (LS1) facing in a direction intersecting the thickness direction (Z-axis direction) of the substrate (20),
  • the top light emitting element (50) is arranged with the light emitting upper surface (53) facing the thickness direction (Z-axis direction) of the substrate (20).
  • the side light emitting element (40) includes a first light emitting side surface (LS1) facing in a first direction (+Y direction) intersecting the thickness direction (Z axis direction) of the substrate (20) as the light emitting side surface;
  • the semiconductor light emitting device according to Appendix A1 further comprising: a second light emitting side surface (LS2) facing in a second direction (-Y direction) opposite to the first direction (+Y direction).
  • the top light emitting element (50) is arranged at a position facing the second light emitting side surface (LS2) while being separated from the side light emitting element (40) in the second direction (-Y direction).
  • the top light emitting element (50) is arranged in a direction that intersects the first direction (+Y direction) with respect to the side light emitting element (40) when viewed from the thickness direction (Z-axis direction) of the substrate (20).
  • the semiconductor light emitting device according to Appendix A2 which is arranged in a spaced apart state.
  • Appendix A5 The semiconductor light emitting device according to any one of appendices A1 to A4, wherein at least one of the wavelength and the output of the light emitted from the side light emitting element (40) and the top light emitting element (50) are different from each other.
  • Appendix A6 The semiconductor light emitting device according to any one of appendices A1 to A4, wherein at least one of the wavelength and the output of the light emitted from the side light emitting element (40) and the top light emitting element (50) are the same.
  • the side light emitting element (40) is a first side light emitting element (40A) having a first light emitting side surface (LS1) and a second light emitting side surface (LS2) as the light emitting side surfaces;
  • a second side light emitting element (40B) that is provided separately from the first side light emitting element (40A) and has a third light emitting side surface (LS3) and a fourth light emitting side surface (LS4) as the light emitting side surfaces.
  • Supplementary Note A1 The semiconductor light emitting device according to any one of A6 to A6.
  • the first side light emitting element (40A) and the second side light emitting element (40B) are connected to the second light emitting side surface (LS2) and the second side light emitting element (40B) when viewed from the thickness direction (Z-axis direction) of the substrate (20).
  • the first side light emitting element (40A) emits light from the first light emitting side surface (LS1) in a first direction (+Y direction) intersecting the thickness direction (Z axis direction) of the substrate (20). It is located in The second side light emitting element (40B) is arranged to emit light from the fourth light emitting side (LS4) in a second direction ( ⁇ Y direction) opposite to the first direction (+Y direction). and The top light emitting element (50) is arranged in the second The semiconductor light emitting device according to appendix A8, which is disposed between the light emitting side surface (LS2) and the third light emitting side surface (LS3).
  • the first side light emitting element (40) emits light from the first light emitting side surface (LS1) in a first direction (+Y direction) intersecting the thickness direction (Z axis direction) of the substrate (20). It is located in The top light emitting element (50) is arranged in the first direction (X-axis direction) when viewed from a direction (X-axis direction) orthogonal to both the thickness direction (Z-axis direction) of the substrate (20) and the first direction (+Y direction).
  • the first side light emitting element (40A) and the second side light emitting element (40B) are arranged in the direction in which the first light emitting side surface (LS1) faces when viewed from the thickness direction (Z-axis direction) of the substrate (20). (+Y direction) and the direction (+X direction) in which the third light emitting side surface (LS3) faces are arranged so as to intersect with each other.
  • the top light emitting element (50) is arranged to face the second light emitting side surface (LS2), When viewed from a direction (X-axis direction) orthogonal to both the thickness direction (Z-axis direction) of the substrate (20) and the first direction (+Y direction), the second light-emitting side surface (LS2) and the top light-emitting surface
  • Appendix A13 The semiconductor light emitting device according to any one of appendices A7 to A12, wherein at least one of the wavelength and the output of the light emitted from the first side light emitting element (40A) and the second side light emitting element (40B) are different from each other.
  • Appendix A14 The semiconductor light emitting device according to any one of appendices A7 to A12, wherein at least one of the wavelength and the output of the light emitted from the first side light emitting element (40A) and the second side light emitting element (40B) are the same. Device.
  • a plurality of the side light emitting elements (40A to 40D) are provided, The plurality of side light emitting elements (40A to 40D) are arranged around the top light emitting element (50) so that their light emitting sides face in different directions.
  • Semiconductor light emitting device Semiconductor light emitting device.
  • the plurality of side light emitting elements are a first side light emitting element (40A) having a first light emitting side surface (LS1) and a second light emitting side surface (LS2); a second side light emitting element (40B) having a third light emitting side surface (LS3) and a fourth light emitting side surface (LS4); a third side light emitting element (40C) having a fifth light emitting side surface (LS5) and a sixth light emitting side surface (LS6); a fourth side light emitting element (40D) having a seventh light emitting side (LS7) and an eighth light emitting side (LS8);
  • the first side light emitting element (40A) emits light from the first light emitting side surface (LS1) in a first direction (+Y direction) intersecting the thickness direction (Z axis direction) of the substrate (20).
  • the second side light emitting element (40B) is arranged in a second direction (-Y direction) which is a direction intersecting the thickness direction (Z-axis direction) of the substrate (20) and which is different from the first direction (+Y direction).
  • ) is arranged to emit light from the fourth light emitting side (LS4)
  • the third side light emitting element (40C) is arranged in a direction intersecting the thickness direction (Z-axis direction) of the substrate (20), and the first direction (+Y direction) and the second direction (-Y direction).
  • the fourth side light emitting element (40D) is arranged in a direction intersecting the thickness direction (Z-axis direction) of the substrate (20), the first direction (+Y direction) and the second direction (-Y direction).
  • the semiconductor light emitting device according to appendix A15 which is arranged to emit light from the eighth light emitting side surface (LS8) in a fourth direction ( ⁇ X direction) different from each of the third direction (+X direction).
  • the side light emitting device (40) is an edge emitting laser device, The semiconductor light emitting device according to any one of appendices A1 to A16, wherein the top light emitting element (50) is a surface emitting laser element or an LED element.
  • Appendix A18 The semiconductor light emitting device according to any one of appendices A1 to A17, further comprising a translucent sealing resin (60) that seals both the side light emitting element (40) and the top light emitting element (50).
  • Appendix A20 The semiconductor light emitting device according to appendix A18 or A19, further comprising a side wall (70) that surrounds the sealing resin (60) and has an opening that exposes the light emitting side surface (LS1).
  • Appendix A21 The semiconductor light emitting device according to any one of appendices A1 to A20, further comprising a diffuser (300) that diffuses light from the top light emitting element (50).
  • Appendix A22 The semiconductor light-emitting device according to any one of appendices A1 to A21, further comprising a first reflection part (80) that reflects a part of the laser light emitted from the light-emitting side surface (LS1).
  • Appendix A23 comprising a first wiring (31) provided on the substrate surface (21),
  • the side light emitting element (40) is mounted on the first wiring (31) and provided on the substrate surface (21) via the first wiring (31),
  • the first wiring (31), as the first reflecting portion (80), extends from the light emitting side surface (LS1) in a direction (+Y direction) in which light is emitted from the light emitting side surface (LS1) in plan view.
  • the semiconductor light emitting device according to appendix A22 which has a portion that is
  • Appendix A23 The semiconductor light emitting device according to appendix A22, wherein the first reflective portion (80) includes a reflective film (230) formed on the substrate surface (21).
  • the first reflecting portion (80) includes a reflector (81) provided on the substrate surface (21) and including a reflecting surface (84) facing in a direction intersecting the substrate surface (21). semiconductor light emitting device.
  • Appendix A26 The semiconductor light emitting device according to any one of appendices A2 to A4, wherein the output of light emitted from the first light emitting side surface (LS1) is equal to the output of light emitted from the second light emitting side surface (LS2).
  • Appendix A27 The semiconductor light emitting device according to any one of appendixes A2 to A4, wherein the output of light emitted from the first light emitting side surface (LS1) is larger than the output of light emitted from the second light emitting side surface (LS2).
  • Appendix A28 The semiconductor light emitting device according to any one of appendices A2 to A4, wherein the output of light emitted from the first light emitting side surface (LS1) is smaller than the output of light emitted from the second light emitting side surface (LS2).
  • Appendix A29 The semiconductor light emitting device according to appendix A7, wherein the output of light emitted from the fourth light emitting side surface (LS4) is equal to the output of light emitted from the third light emitting side surface (LS3).
  • Appendix A30 The semiconductor light emitting device according to appendix A7, wherein the output of light emitted from the fourth light emitting side (LS4) is larger than the output of light emitted from the third light emitting side (LS3).
  • Appendix A31 The semiconductor light emitting device according to appendix A7, wherein the output of light emitted from the fourth light emitting side (LS4) is smaller than the output of light emitted from the third light emitting side (LS3).
  • the plurality of side light emitting elements are A fifth side light emitting element (40E) is disposed between the first side light emitting element (40A) and the third side light emitting element (40C), and has a ninth light emitting side surface (LS9) and a tenth light emitting side surface (LS10). )and, A sixth side light emitting element (40F) is disposed between the second side light emitting element (40B) and the fourth side light emitting element (40D) and has an eleventh light emitting side (LS11) and a twelfth light emitting side (LS12).
  • a seventh side light emitting element (40G) disposed between the first side light emitting element (40A) and the fourth side light emitting element (40D), and having a thirteenth light emitting side (LS13) and a fourteenth light emitting side (LS14).
  • An eighth side light emitting element (40H) is disposed between the second side light emitting element (40B) and the third side light emitting element (40C), and has a fifteenth light emitting side (LS15) and a sixteenth light emitting side (LS16).
  • the fifth side light emitting element (40E) is arranged in a direction that intersects the thickness direction (Z-axis direction) of the substrate (20), and includes the first direction (+Y direction) and the third direction (+X direction). arranged so as to emit light from the ninth light emitting side surface (LS9) in a fifth direction between The sixth side light emitting element (40F) is arranged in a direction intersecting the thickness direction (Z-axis direction) of the substrate (20), and is arranged in the second direction (-Y direction) and the fourth direction (-X direction).
  • the seventh side light emitting element (40G) is arranged in a direction intersecting the thickness direction (Z-axis direction) of the substrate (20), and the first direction (+Y direction) and the fourth direction (-X direction). arranged so as to emit light from the thirteenth light emitting side surface (LS13) in a seventh direction between
  • the eighth side light emitting element (40H) is arranged in a direction intersecting the thickness direction (Z-axis direction) of the substrate (20), and is arranged in the second direction (-Y direction) and the third direction (+X direction).
  • the semiconductor light emitting device according to appendix A16 wherein the semiconductor light emitting device is arranged so as to emit light from the sixteenth light emitting side surface (LS16) in an eighth direction between.
  • Appendix A33 A plurality of the side light emitting elements are provided, The semiconductor light emitting device according to any one of appendices A1 to A14, wherein the plurality of side light emitting elements (40P, 40Q, 40R) are arranged at positions biased in one direction with respect to the top light emitting element (50). Device.
  • Each of the plurality of side light emitting elements (40P, 40Q, 40R) has a first light emitting side surface facing in a first direction (+Y direction) intersecting the thickness direction (Z axis direction) of the substrate (20). comprising a light emitting side surface (LS1) and a second light emitting side surface (LS2) facing in a second direction (-Y direction) opposite to the first direction (+Y direction),
  • the plurality of side light emitting elements (40P, 40Q, 40R) are arranged in a direction (X
  • the sealing resin (60) has a sealing surface (61) facing the same side as the substrate surface (21), and a sealing surface (61) that intersects with the sealing surface (61) and facing the same side as the light emitting side surface (LS1). a sealed end surface (63);
  • the semiconductor light emitting device according to any one of appendices A18 to A20, wherein the sealing end surface (63) is a roughened surface that is rougher than the sealing surface (61).
  • the substrate (20) includes a substrate back surface (22) opposite to the substrate surface (21), a first wiring (31) and a second wiring (32) provided on the substrate surface (21); a third wiring (33) provided on the substrate surface (21) and electrically connected to both the side light emitting element (40) and the top light emitting element (50) by wires (W1, W2); a first electrode (34), a second electrode (35), and a third electrode (36) provided on the back surface (22) of the substrate; a first via (37) that penetrates the substrate (20) and connects the first wiring (31) and the first electrode (34); a second via (38) that penetrates the substrate (20) and connects the second wiring (32) and the second electrode (35); further comprising a third via (39) penetrating the substrate (20) and connecting the third wiring (33) and the third electrode (36);
  • the side light emitting element (40) is mounted on the first wiring (31) and provided on the substrate surface (21) via the first wiring (31),
  • the substrate (20) includes a first substrate side surface (23) and a second substrate side surface (24) that connect the substrate front surface (21) and the substrate back surface (22),
  • the first substrate side surface (23) faces the same side as the light emitting side surface (LS1)
  • the second substrate side surface (24) faces opposite to the first substrate side surface (24)
  • a first side electrode (261) is formed continuously from the first electrode (34) on the first substrate side surface (23)
  • the semiconductor light emitting device according to appendix A38, wherein a second side surface electrode (262) is formed continuously from the second electrode (35) on the second substrate side surface (24).
  • [Appendix A40] further comprising a first wiring (31) and a second wiring (32) provided on the substrate surface (21),
  • the side light emitting element (40) is mounted on the first wiring (31) and provided on the substrate surface (21) via the first wiring (31),
  • the top light emitting element (50) is mounted on the second wiring (32) and provided on the substrate surface (21) via the second wiring (32),
  • the first side electrode (261) connects the first electrode (34) and the first wiring (31),
  • the semiconductor light emitting device according to appendix A39, wherein the second side electrode (262) connects the second electrode (35) and the second wiring (32).
  • [Appendix A41] comprising a third wiring (33) provided on the substrate surface (21),
  • the first wiring (31) is electrically connected to the cathode electrode (48) of the side light emitting element (40)
  • the second wiring (32) is electrically connected to the cathode electrode (55) of the top light emitting element (50)
  • the third wiring (33) is electrically connected to both the anode electrode (47) of the side light emitting element (40) and the anode electrode (54) of the top light emitting element (50).
  • Appendix A38 to A40 The semiconductor light emitting device according to any one of the above.
  • the substrate (20) connects the back surface (22) of the substrate opposite to the front surface (21) of the substrate, the front surface (21) of the substrate, and the back surface (22) of the substrate, and is the same as the light emitting side surface (LS1). a side facing substrate side (23);
  • the semiconductor light emitting device according to any one of appendices A1 to A41, further comprising an end surface through hole (271) provided in the substrate side surface (23).
  • appendix A43 The semiconductor light emitting device according to appendix A42, further comprising a resist (272) that covers the end surface through hole (271) from the substrate surface (21) side.
  • Appendix A44 The semiconductor light emitting device according to appendix A43, wherein the resist (272) is made of a material with higher reflectance than the substrate (20).
  • Appendix A45 Further comprising a wire (W) electrically connecting the side light emitting element (40) and the third wiring (33),
  • the wire (W) is a bonding wire
  • the bonding portion of the wire (W) with the third wiring (31) is first bonded
  • the semiconductor light emitting device according to any one of appendices A38 to A40, wherein a joint portion of the wire (W) with the side light emitting element (40) is a second bonding.
  • the device further includes a side wall (70) formed to surround the side light emitting element (40) and the top light emitting element (50) and having an opening that exposes the light emitting side surface (LS1). 1.
  • the semiconductor light emitting device according to item 1.
  • the substrate (160) includes a conductive part (180) made of a conductive material,
  • the substrate surface (161) includes a conductive surface (181) configured by the surface of the conductive part (180),
  • the side light emitting element (40) is mounted on the conductive surface (181),
  • the semiconductor light-emitting device according to any one of appendices A1 to A21, further comprising a reflecting part (80) that reflects a part of the light emitted from the light-emitting side surface (LS1).
  • the substrate (160) includes: a conductive part (180) made of a conductive material;
  • the insulating substrate (160A) includes a bottom wall portion (171) that holds the first conductive portion (180), and a bottom wall portion (171) that stands up from the bottom wall portion (171) and extends in the thickness direction (Z-axis direction) of the substrate (160). ), the semiconductor light emitting device according to appendix A49, wherein the side wall portion (172) surrounding the side light emitting element (40) and the top light emitting element (50) are integrally formed.
  • Appendix A51 The semiconductor light emitting device according to any one of appendices A1 to A46, wherein the substrate (20) is formed of a material containing ceramic.
  • Appendix A52 The semiconductor light emitting device according to any one of appendices A1 to A46, wherein the substrate (20) is formed of a glass epoxy resin.
  • Appendix A56 The semiconductor light emitting device according to appendix A54, wherein the second submount substrate (220) is formed of a material having a coefficient of thermal expansion closer to that of the top light emitting element (50) than that of the second wiring (32).
  • [Appendix B1] providing a substrate (820) having a substrate surface (821); a step of mounting a side light emitting element (40) on the substrate surface (821); a step of mounting a top light emitting element (50) on the substrate surface (821); forming a translucent sealing resin (860) for sealing the side light emitting element (40) and the top light emitting element (50);
  • the sealing resin (860) has a sealing surface (61) facing the same side as the substrate surface (821), and a first sealing end surface (63) intersecting the sealing surface (61).
  • the side light emitting element (40) includes a light emitting side surface (LS1) that emits light
  • the top light emitting element (50) includes a light emitting top surface (53) that emits light
  • the side light emitting element (40) is mounted on the substrate surface (21) so that the light emitting side surface (LS1) faces a direction intersecting the thickness direction (Z-axis direction) of the substrate (20).
  • a method for manufacturing a semiconductor light emitting device wherein the top light emitting element is mounted on the surface of the substrate so that the light emitting upper surface (53) faces the thickness direction (Z-axis direction) of the substrate (20).
  • Appendix B2 further comprising forming a side wall (870) on the substrate (820) by resin molding, The method for manufacturing a semiconductor light emitting device according to Appendix B1, wherein the side wall (870) surrounds the sealing resin (860) in plan view.
  • Appendix B3 The method for manufacturing a semiconductor light emitting device according to Appendix B2, wherein the sealing resin (860) is filled into a space surrounded by the side wall (870) and the substrate (820) by potting or resin molding.
  • [Appendix B4] providing a lead frame (980) including a first conductive portion (180) having a first conductive surface (181) and a second conductive portion (190) having a second conductive surface (191); forming an insulating substrate (960) that supports the lead frame (980) by resin molding; a step of mounting a side light emitting element (40) on the first conductive surface (181); a step of mounting a top light emitting device (50) on the second conductive surface (191); forming a translucent sealing resin (950) for sealing the side light emitting element (40) and the top light emitting element (50),
  • the sealing resin (950) has a sealing surface (61) facing the same side as the substrate surface (161), and a first sealing end surface (63) intersecting the sealing surface (61).
  • the side light emitting element (40) includes a first light emitting side surface (LS1) that emits light
  • the top light emitting element (50) includes a light emitting top surface (53) that emits light
  • the side light emitting element (40) is mounted on the first conductive surface (181) so as to emit light from the first light emitting side surface (LS1) toward the first sealed end surface (63),
  • a method for manufacturing a semiconductor light emitting device wherein the top light emitting element (50) is mounted on the second conductive surface (181) so as to emit light from the top light emitting surface (53) toward the sealing surface (61).
  • the bottom wall portion (971) supporting the lead frame (980) is formed by resin molding, and the sealing member is formed in the thickness direction (Z-axis direction) of the substrate (960).
  • First side light emitting element 40B Second side light emitting element 40C ...Third side light emitting element 40D.Fourth side light emitting element 40E...Fifth side light emitting element 40F...Sixth side light emitting element 40G...Seventh side light emitting element 40H...Eighth side light emitting element 41...Element surface 42...Element back surface 43 ⁇ 46...First to fourth element side surfaces 50...Top light emitting element 51...Element surface 52...Element back surface 53...Light emitting upper surface 54...Anode electrode 55...Cathode electrode 60...Sealing resin 61...Sealing surface 63...66...th 1 to 4th sealing end surface 67... Diffusion material 70... Side wall 71... First side wall part 72...
  • First extension part 184 ...First hanging lead part 190...Second conductive part 191...Second conductive surface 192...Second conductive back surface 193...Second mounting part 194...Second hanging lead part 200...Third conductive part 201...Third conductive surface 203 ...Third mounting section 204...Third hanging lead section 210...First submount board 211...First surface 212...First back surface 213-216...First to fourth side surfaces 217...First surface side wiring 217A...First Extension part 217B...Second extension part 218...First back side wiring 219...First via 220...Second submount board 221...Second surface 222...Second back surface 223-226...First to fourth side surfaces 227 ...Second front side wiring 228...Second back side wiring 229...Second via 230...Reflection film 240...Reflection film 250...Reflector 251...Bottom surface 252...S
  • Diffuser 820 ... Substrate 821... Substrate surface 822... Substrate back surface 860... Sealing resin 870... Side wall 880... Frame body 950... Sealing resin 960... Insulating substrate 971... Bottom wall portion 972... Side wall portion 980... Lead frame 981...

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

Dispositif électroluminescent à semi-conducteur comprenant : un substrat ayant une surface de substrat ; un élément électroluminescent de surface latérale qui est disposé sur la surface de substrat et a une première surface latérale électroluminescente qui émet de la lumière ; et un élément électroluminescent de surface supérieure qui est disposé sur la surface de substrat et a une surface supérieure électroluminescente qui émet de la lumière. L'élément électroluminescent de surface latérale est positionné de telle sorte que la première surface latérale électroluminescente est orientée dans une direction croisant la direction d'épaisseur du substrat. L'élément électroluminescent de surface supérieure est positionné de telle sorte que la surface supérieure électroluminescente est orientée dans la direction de l'épaisseur du substrat.
PCT/JP2023/032957 2022-09-12 2023-09-11 Dispositif électroluminescent à semi-conducteur WO2024058088A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022144645 2022-09-12
JP2022-144645 2022-09-12

Publications (1)

Publication Number Publication Date
WO2024058088A1 true WO2024058088A1 (fr) 2024-03-21

Family

ID=90274941

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/032957 WO2024058088A1 (fr) 2022-09-12 2023-09-11 Dispositif électroluminescent à semi-conducteur

Country Status (1)

Country Link
WO (1) WO2024058088A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156378A (ja) * 1999-11-29 2001-06-08 Sharp Corp 発光素子、及びそれを搭載した電子機器
JP2008028391A (ja) * 2006-07-17 2008-02-07 Agere Systems Inc マルチレーザー用途のレーザー・アセンブリ
WO2017203773A1 (fr) * 2016-05-25 2017-11-30 シャープ株式会社 Dispositif électroluminescent et procédé de fabrication de dispositif électroluminescent
JP2018511785A (ja) * 2015-02-19 2018-04-26 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 赤外線レーザ照明装置
US20190348819A1 (en) * 2017-01-16 2019-11-14 Apple Inc. Combining light-emitting elements of differing divergence on the same substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156378A (ja) * 1999-11-29 2001-06-08 Sharp Corp 発光素子、及びそれを搭載した電子機器
JP2008028391A (ja) * 2006-07-17 2008-02-07 Agere Systems Inc マルチレーザー用途のレーザー・アセンブリ
JP2018511785A (ja) * 2015-02-19 2018-04-26 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 赤外線レーザ照明装置
WO2017203773A1 (fr) * 2016-05-25 2017-11-30 シャープ株式会社 Dispositif électroluminescent et procédé de fabrication de dispositif électroluminescent
US20190348819A1 (en) * 2017-01-16 2019-11-14 Apple Inc. Combining light-emitting elements of differing divergence on the same substrate

Similar Documents

Publication Publication Date Title
KR102129533B1 (ko) 발광소자, 발광장치 및 장치 베이스
TWI289947B (en) Bendable solid state planar light source, a flexible substrate therefor, and a manufacturing method therewith
US8231237B2 (en) Sub-assembly and methods for forming the same
JP4279388B2 (ja) 光半導体装置及びその形成方法
KR20200081350A (ko) 발광소자, 발광장치 및 장치 베이스
KR101081069B1 (ko) 발광소자 및 그를 이용한 라이트 유닛
JP4715422B2 (ja) 発光装置
US9401467B2 (en) Light emitting device package having a package body including a recess and lighting system including the same
JP5279488B2 (ja) ケーシング本体およびケーシング本体の製造方法
US8283675B2 (en) Light emitting device
US8158996B2 (en) Semiconductor light emitting device package
JP5209969B2 (ja) 照明システム
CN102057506A (zh) 发光二极管模块和使用发光二极管模块的发光装置
JP2005005740A (ja) 半導体発光エミッタパッケージ
TW201409770A (zh) 發光裝置
JP2008147605A (ja) 発光装置及びその製造方法並びに実装基板
JP2008288536A (ja) 表面実装型セラミック基板
JPH10284759A (ja) 発光装置及びそれを用いた表示装置
JP2006278567A (ja) Ｌｅｄユニット
TW201304217A (zh) 發光二極體封裝結構及其製造方法
JP2000012894A (ja) 半導体発光装置
TWI824121B (zh) 光源裝置
JP2008147513A (ja) 発光装置
JP4816394B2 (ja) スポットライト
WO2024058088A1 (fr) Dispositif électroluminescent à semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23865442

Country of ref document: EP

Kind code of ref document: A1