WO2024045930A1 - Quantum chip and quantum computer - Google Patents

Quantum chip and quantum computer Download PDF

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Publication number
WO2024045930A1
WO2024045930A1 PCT/CN2023/108084 CN2023108084W WO2024045930A1 WO 2024045930 A1 WO2024045930 A1 WO 2024045930A1 CN 2023108084 W CN2023108084 W CN 2023108084W WO 2024045930 A1 WO2024045930 A1 WO 2024045930A1
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WO
WIPO (PCT)
Prior art keywords
capacitor plate
josephson junction
quantum chip
coil
chip according
Prior art date
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PCT/CN2023/108084
Other languages
French (fr)
Chinese (zh)
Inventor
杨振权
李松
李业
Original Assignee
本源量子计算科技(合肥)股份有限公司
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Publication date
Priority claimed from CN202211061364.1A external-priority patent/CN117669746A/en
Priority claimed from CN202211158061.1A external-priority patent/CN115249070B/en
Application filed by 本源量子计算科技(合肥)股份有限公司 filed Critical 本源量子计算科技(合肥)股份有限公司
Publication of WO2024045930A1 publication Critical patent/WO2024045930A1/en

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F15/00Digital computers in general; Data processing equipment in general
    • G06F15/76Architectures of general purpose stored program computers
    • G06F15/78Architectures of general purpose stored program computers comprising a single central processing unit
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/20Models of quantum computing, e.g. quantum circuits or universal quantum computers

Definitions

  • the present application relates to the field of computing technology, and more specifically, to a quantum chip and a quantum computer.
  • Quantum chip is the core component of quantum computer.
  • the basic idea of constructing a quantum chip using a superconducting physical system is: a squid formed by connecting Josephson junctions in parallel is connected in parallel with a capacitor plate.
  • the superconducting qubit circuit formed based on this parallel structure serves as the basic unit for performing quantum calculations on the quantum chip.
  • Qubits can be controlled by applying external electromagnetic signals.
  • the magnetic flux of squid can be controlled by applying a signal to the magnetic flux control signal line (Z-control line) on the quantum chip to complete the control of the qubit frequency, thereby realizing a series of qubits. operate.
  • Z-control line magnetic flux control signal line
  • This application provides a quantum chip and a quantum computer. Each aspect involved in this application is introduced below.
  • a quantum chip including: a superconducting qubit circuit forming a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region; and, with the The superconducting qubit circuit is coupled with a magnetic flux control signal line, and the control signal applied by the magnetic flux control signal line obtains induced currents in opposite directions in the first part of the circuit and the second part of the circuit.
  • the superconducting qubit circuit includes: a capacitor plate; and a first Josephson junction and a second Josephson junction, the first Josephson junction and the second Josephson junction are connected in parallel, and the One end of the first Josephson junction and one end of the second Josephson junction are both connected to the capacitor plate, the other end of the first Josephson junction and the other end of the second Josephson junction are interconnected, and Ground.
  • the superconducting qubit circuit includes a first electrical connection structure, and the other end of the first Josephson junction and the other end of the second Josephson junction are interconnected through the first electrical connection structure, And the first electrical connection structure intersects with the capacitor plate in a non-contact manner.
  • the superconducting qubit circuit includes a first electrical connection structure and a second electrical connection structure, and one end of the first Josephson junction and one end of the second Josephson junction are connected through the first electrical connection.
  • Structural connection, the other end of the first Josephson junction and the other end of the second Josephson junction are connected through the second electrical connection structure, and the second electrical connection structure and the first electrical connection structure Non-contact crossover.
  • the superconducting qubit circuit includes: a first capacitor plate and a second capacitor plate; and a first Josephson junction and a second Josephson junction, one end of the first Josephson junction and the The second Josephson knot has one end connected to all The first capacitor plate is connected, and the other end of the first Josephson junction and the other end of the second Josephson junction are both connected to the second capacitor plate.
  • the first capacitor plate and the second capacitor plate are arranged separately.
  • the first capacitor plate and the second capacitor plate intersect in a non-contact manner.
  • the second capacitor plate surrounds the first capacitor plate, and the first region and the second region are located between the second capacitor plate and the first capacitor plate. .
  • first capacitor plate and the second capacitor plate are symmetrically distributed along the connection line of the first Josephson junction and the second Josephson junction.
  • the geometric center of the first capacitor plate overlaps the geometric center of the second capacitor plate.
  • the ground capacitance C 01 of the first capacitor plate and the ground capacitance C 02 of the second capacitor plate satisfy the following relationship: 100C 01 ⁇ C 02 , or 100C 02 ⁇ C 01 .
  • the second capacitor plate is an annular membrane.
  • a capacitor arm for coupling is formed on the second capacitor plate.
  • the first capacitor plate is an annular membrane or a circular membrane.
  • the first capacitor plate surrounds the magnetic flux control signal line.
  • the superconducting qubit circuit includes: a first Josephson junction and a second Josephson junction; a first capacitor plate and a second capacitor plate, the first capacitor plate and the second capacitor The plates are independently located at both ends of the first Josephson junction; and, a third capacitor plate and a fourth capacitor plate, the third capacitor plate and the fourth capacitor plate are independently located at Both ends of the second Josephson junction; and there is no contact between the first capacitor plate and the fourth capacitor plate, and between the second capacitor plate and the third capacitor plate. cross electrical connections.
  • the magnetic flux control signal line and the superconducting qubit circuit are formed on the same surface, and the magnetic flux control signal line is located on one side of the superconducting qubit circuit.
  • the magnetic flux control signal line and the superconducting qubit circuit are formed on different surfaces.
  • the magnetic flux control signal line includes a coil.
  • the coil includes a first coil and a second coil, and the first coil and the second coil are arranged alternately, and the current directions of the first coil and the second coil are opposite.
  • a second aspect provides a quantum computer provided with the quantum chip described in the first aspect.
  • the quantum chip provided by this application includes a superconducting qubit circuit and a magnetic flux control signal line coupled with the superconducting qubit circuit, and the superconducting qubit circuit forms a first part of the circuit surrounding the first region and a second part of the circuit surrounding the first region.
  • the second part of the circuit in the area; the control signal applied through the magnetic flux control signal line generates corresponding magnetic flux in the first area and the second area, and then obtains induced currents in opposite directions in the first part of the circuit and the second part of the circuit.
  • the opposite induced currents cancel each other to a certain extent, reducing the impact of noise on the Josephson junction energy, thereby reducing the impact of noise on the qubit frequency, which in turn helps reduce the deviation of the qubit frequency and ensures the operational accuracy of the qubit.
  • Figure 1 is a schematic structural diagram of a qubit on a quantum chip in related technology
  • Figure 2 is a schematic diagram of a quantum chip provided by an embodiment of the present application.
  • Figure 3 is a schematic structural diagram of the first implementation example of a quantum chip using a single capacitor plate in this application;
  • Figure 4 is a schematic structural diagram of a second implementation example of a quantum chip using a single capacitor plate in this application;
  • Figure 5 is a schematic structural diagram of a third implementation example of a quantum chip using a single capacitor plate in this application;
  • Figure 6 is a schematic structural diagram of the first implementation example of a quantum chip using two capacitor plates in this application;
  • Figure 7 is a schematic structural diagram of a second implementation example of a quantum chip using two capacitor plates in this application.
  • Figure 8 is a schematic structural diagram of a third implementation example of a quantum chip using two capacitor plates in this application.
  • Figure 9 is a schematic structural diagram of a fourth implementation example of a quantum chip using two capacitor plates in this application.
  • Figure 10 is a schematic structural diagram of the fifth implementation example of a quantum chip using two capacitor plates in this application.
  • Figure 11 is a schematic structural diagram of the sixth implementation example of a quantum chip using two capacitor plates in this application.
  • Figure 12 is a schematic structural diagram of the seventh implementation example of a quantum chip using two capacitor plates in this application.
  • Figure 13 is a schematic diagram of the implementation structure of a quantum chip using four capacitor plates in this application.
  • Figure 14 is a schematic structural diagram of an embodiment of the magnetic flux control signal line of the present application.
  • the physical implementation methods of qubits include superconducting physical systems, semiconductor quantum dot physical systems, ion traps, diamond vacancies, topological quantum, photons, etc.
  • Superconducting physics system It is currently the fastest and best way to implement solid-state quantum computing.
  • the energy level structure of superconducting qubit circuits based on superconducting physical systems can be controlled by external electromagnetic signals, and the design and customization of the circuits are highly controllable.
  • the superconducting physics system has scalability that is unmatched by most quantum physics systems.
  • Transmons is a commonly used qubit structure.
  • the qubit includes a capacitor, and a superconducting quantum interference device squid with one end connected to ground and the other end connected to the capacitor.
  • squid The equivalent critical current I c is adjusted by the external magnetic field ⁇ e .
  • the capacitor is often a cross-shaped parallel plate capacitor, as shown in Figure 1.
  • the cross-shaped capacitor plate C q is surrounded by the ground plane GND, and there is a gap between the cross-shaped capacitor plate and the ground plane GND.
  • One end of the superconducting quantum interference device squid Connect to the cross-shaped capacitive plate, and the other end is connected to the ground plane GND.
  • the second end is used to couple with the reading resonant cavity, and the first end and A certain space needs to be reserved near the second end for wiring. For example, space needs to be reserved near the first end for the pulse control signal line and the magnetic flux control signal line (Z-control line).
  • the cross-shaped capacitor plate Both ends can be used to couple to adjacent qubits.
  • the qubit frequency ⁇ 10 is related to the electrostatic energy E C of the capacitor and the energy E J of the squid.
  • the energy E J of the squid changes with the external magnetic field. Therefore, the control of the qubit frequency can be completed by the response of the energy E J of the squid to changes in the external magnetic field. adjust.
  • the magnetic flux control signal line (Z-control line) is a structure that controls the external magnetic field ⁇ e . It is generally arranged next to the squid.
  • the current applied to the magnetic flux control signal line (Z-control line) is used to generate the external magnetic field ⁇ e .
  • the external magnetic field passing through the squid region causes changes in the qubit frequency of the squid region.
  • the magnetic flux penetrating the squid loop is affected by factors such as the magnitude of the magnetic field generated by the electrical signal applied to the flux control signal line, the mutual inductance strength M between the flux control signal line and the squid loop, and magnetic flux noise.
  • Magnetic flux noise is the inherent noise caused by current fluctuations in the magnetic flux control signal or the magnetic flux noise caused by the additional signals carried by the magnetic flux control signal. The magnetic flux noise will cause the qubit frequency to fluctuate and deviate.
  • the current applied to the magnetic flux control signal line (Z-control line) is usually required to have high accuracy.
  • this method requires high signal control and is difficult to suppress inherent noise.
  • embodiments of the present application provide a quantum chip and a quantum computer. , to reduce the impact of magnetic flux noise on qubit control.
  • Figure 2 is a schematic diagram of a quantum chip provided by an embodiment of the present application.
  • a quantum chip provided by an embodiment of the present application includes a superconducting qubit circuit, and a magnetic flux control signal line coupled with the superconducting qubit circuit, wherein: the superconducting qubit circuit A first partial circuit surrounding the first area and a second partial circuit surrounding the second area are formed, and the control signal applied by the magnetic flux control signal line obtains induced currents in opposite directions in the first partial circuit and the second partial circuit.
  • the superconducting qubit circuit in the embodiment of the present application is a thin film circuit structure, which can be directly prepared and formed on the substrate using a semiconductor process.
  • the magnetic flux regulates the role of the current signal I+i (where i is the noise signal) transmitted by the signal line.
  • the noise signal i generates an induced current i 1 in the first part of the circuit
  • an induced current i 2 is generated in the second part of the circuit
  • the induced currents i 1 and The direction of i 2 is opposite, and the opposite induced currents i 1 and i 2 cancel each other to a certain extent, which reduces the impact of noise on the energy of the equivalent Josephson junction of squid, thereby reducing the impact of noise on the frequency of the qubit, with Helps reduce the deviation of qubit frequency and improves the accuracy of qubit operation.
  • the improvement of the stability of the qubit frequency helps to improve the performance of the qubit.
  • Figure 2 illustrates the directions of the induced currents generated by the noise signal i in the first part of the circuit and the second part of the circuit respectively.
  • the induced current generated by the noise signal i in the superconducting qubit circuit is composed of the induced current i 1 and The result after the interaction of i 2 .
  • Embodiments of the present application are further described below with reference to FIGS. 3 to 14 .
  • Embodiment 1 An embodiment of a quantum chip using a single capacitor plate
  • FIGS 3 to 5 are schematic diagrams of the implementation structure of a quantum chip using a single capacitor plate in this application.
  • Q 1 and Q 2 represent two qubits located on the quantum chip.
  • the use of a single capacitor plate will be further described below in conjunction with Figures 3 to 5 Example of a quantum chip on the board.
  • the superconducting qubit circuit includes a first capacitor plate 21, and a first Josephson junction 11 and a second Josephson junction 12, wherein the first Josephson junction 11 and The second Josephson junction 12 is connected in parallel, and one end of the first Josephson junction 11 and one end of the second Josephson junction 12 are connected to the first capacitor plate 21 .
  • the other end of the junction and the other end of the second Josephson junction are interconnected and connected to the ground plane GND.
  • the bottom superconducting electrode and/or the top superconducting electrode of the Josephson junction itself can be directly used for connection, or an additionally formed electrical connection structure can be used for connection.
  • connection form is not limited, as long as the above-mentioned first
  • the superconducting qubit circuit formed by connecting the capacitor plate 21, the first Josephson junction 11, and the second Josephson junction 12 only needs to form a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region.
  • the superconducting qubit circuit includes a first circuit Connection structure 31, the first electrical connection structure 31 electrically and physically connects the other end of the first Josephson junction 11 and the other end of the second Josephson junction 12, wherein the first Josephson junction The other end of the junction 11 is directly connected to the ground plane GND, and the first electrical connection structure 31 intersects with the first capacitor plate 21 in a non-contact manner.
  • one end of the first Josephson junction 11 and one end of the second Josephson junction 12 are electrically and physically connected to the first capacitor plate 21 .
  • the non-contact intersection described in this article means that the projection of the extended trajectory of the two electrical structures on the substrate surface has an intersection point, and the two electrical structures above the intersection point are filled with some dielectric to reduce or block the gap between the two electrical structures. influence on signal transmission.
  • the superconducting qubit circuit includes a first part of the circuit.
  • the electrical connection structure 31 and the second electrical connection structure 32 wherein the first electrical connection structure 31 electrically and physically contacts and connects one end of the first Josephson junction 11 and one end of the second Josephson junction 12, Keep the first Josephson junction 11 and the second Josephson junction 12 to be electrically connected to the first capacitor plate 21 , and the second electrical connection structure 32 is electrically and physically connected to the first The other end of the Josephson junction 11 and the other end of the second Josephson junction 12 keep both the first Josephson junction 11 and the second Josephson junction 12 connected to the ground plane GND, and the second The electrical connection structure 32 intersects the first electrical connection structure 31 in a non-contact manner.
  • first Josephson junction 11 can be directly electrically and physically connected to the first capacitor plate 21
  • second Josephson junction 12 can be connected to the first capacitor plate 21 through the first electrical connection structure 31
  • the capacitor plate 21 is electrically and physically connected
  • the other end of the first Josephson junction 11 is directly connected to the ground
  • the other end of the second Josephson junction 12 is common with the other end of the second Josephson junction 12 through the second electrical connection structure 32 Connect the ground plane GND.
  • the implementation of the quantum chip using a single capacitor plate is not limited to the above.
  • the first capacitor plate 21 can also be surrounded by the ground plane GND, and the first capacitor plate 21 is surrounded by the ground plane GND. 21 and ground There is a gap between the plane GND, the first Josephson junction 11 and the second Josephson junction 12 are distributed in the gap on both sides of the first capacitor plate 21, and the first Josephson junction 11 and the One end of the second Josephson junction 12 is electrically and physically connected to the first capacitor plate 21 , and the other end is electrically and physically connected to the ground plane GND.
  • Embodiment 2 An embodiment of a quantum chip using two capacitor plates
  • FIGS 6 to 12 are schematic diagrams of the implementation structure of a quantum chip using two capacitor plates in this application.
  • Q 1 and Q 2 represent two qubits located on the quantum chip. The use of two qubits will be further described below in conjunction with Figures 6 to 12 An embodiment of a quantum chip with capacitor plates.
  • the superconducting qubit circuit includes a first capacitor plate 21 and a second capacitor plate 22, and a first Josephson junction 11 and a second Josephson junction 12, wherein, The first Josephson junction 11 and the second Josephson junction 12 are connected in parallel, and both one end of the first Josephson junction 11 and one end of the second Josephson junction 12 are connected to the first capacitor.
  • the plates 21 are connected, and the other end of the first Josephson junction 11 and the other end of the second Josephson junction 12 are both connected to the second capacitor plate 22 .
  • the bottom superconducting electrode and/or the top superconducting electrode of the Josephson junction itself can be directly used for connection, or an additionally formed electrical connection structure can be used for connection.
  • connection form is not limited, as long as the above-mentioned first
  • the superconducting qubit circuit formed by connecting the capacitor plate 21 and the second capacitor plate 22 and the first Josephson junction 11 and the second Josephson junction 12 forms a first part of the circuit surrounding the first region and a circuit surrounding the second region.
  • the second part of the circuit is enough.
  • the first capacitor plate 21 and the second capacitor plate are used 22 non-contact crossover forms.
  • the non-contact intersection described in this example means that the projections of the extension tracks of the first capacitor plate 21 and the second capacitor plate 22 on the substrate surface have an intersection point, and the first capacitor above the intersection point A certain dielectric is filled between the plate 21 and the second capacitor plate 22 to reduce or block the influence of signal transmission between the two electrical structures.
  • the first capacitor plate 21 and the second capacitor plate 22 can be formed on two surfaces with different heights. The difference in height can be realized by using grooves formed on the surface of the substrate.
  • the first capacitor plate 21 can be formed on two surfaces with different heights.
  • the plate 21 is formed below the groove, and the second capacitor plate 22 is formed on the surface of the substrate and spans both sides of the groove.
  • the first capacitor plate 21 and the second capacitor plate 22 can also be formed on one surface, and one bridge is used to bridge the other at the intersection of the tracks.
  • the second capacitance plate 22 surrounds the first capacitance plate. 21 and the first region and the second region are located between the second capacitor plate 22 and the first capacitor plate 21 , as shown in FIGS. 6 to 12 . Specifically, as shown in FIG.
  • the first capacitor plate 21 and the second capacitor plate 22 are separated, and the second capacitor plate 22 surrounds the first capacitor plate 21 , and the first Josephson junction
  • the first end of 11 is connected to the first capacitor plate 21, the second end of the first Josephson junction 11 is connected to the second capacitor plate 22, and the first end of the second Josephson junction 12
  • the second end of the second Josephson junction 12 is connected to the first capacitor plate 21 , the second end of the second Josephson junction 12 is connected to the second capacitor plate 22 , and a magnetic flux regulating device is arranged near the second capacitor plate 22 Signal line 4 and pulse control signal line 5.
  • Q 1 and Q 2 are used to represent each qubit formed on the substrate in Figure 6 , where each qubit represented by the first qubit Q 1 and the second qubit Q 2 Both include a first capacitor plate 21 and a second capacitor plate 22.
  • the first capacitor plate 21 and the second capacitor plate 22 are not directly connected to the ground plane GND, but There is a suitable gap between the first capacitor plate 21 and the ground plane GND.
  • the physical size of the gap is designed and determined according to the performance parameters of the quantum chip. It should be noted that the capacitor C 01 is formed between the first capacitor plate 21 and the ground plane GND.
  • a capacitance C 02 is formed between the two capacitor plates 22 and the ground plane GND, and a capacitance C 12 is formed between the first capacitor plate 21 and the second capacitor plate 22 .
  • the capacitance C 01 and the capacitance C 01 can be determined based on the performance parameters of the quantum chip.
  • the values of C 02 and capacitor C 12 are then calculated to determine the physical sizes of the first capacitor plate 21 and the second capacitor plate 22 .
  • the first Josephson junction 11 and the second Josephson junction 12 divide the first capacitor plate 21 and the second capacitor plate 22 surrounding the first capacitor plate 21 to form two parts of the circuit.
  • the upper area surrounded by the four is the first area
  • the lower area surrounded by the four is the second area.
  • the opposite induced currents can form a certain This degree of cancellation reduces the impact of noise on the deviation of the qubit frequency, thereby helping to control the frequency of the qubit at an ideal position. Therefore, the embodiments of the present application help to suppress the impact of magnetic flux noise on the operation accuracy of qubits, and control the frequency of qubits more accurately to a position that is insensitive to magnetic flux.
  • At least one of the first capacitor plate 21 and the second capacitor plate 22 may be an annular film, as shown in FIGS. 6 to 12 .
  • the first capacitor plate 21 and the second capacitor plate 22 are not limited to the above shapes, as long as the second capacitor plate 22 can surround the first capacitor plate 21, such as As shown in Figure 7 and Figure 8.
  • the first capacitor plate 21 may also be a circular film, as shown in FIGS. 6 and 8 . It can be understood that annular films and circular films are thin film electrical structures with an annular or circular pattern formed on a substrate.
  • the quantum chip in the embodiment of the present application can directly use mature semiconductor processes to deposit superconducting materials.
  • the deposited thickness can be micron or nanoscale, and the superconducting material exhibits superconducting at a temperature equal to or lower than the critical temperature, such as about 10-100 millikelvin (mK) or about 4mK.
  • the critical temperature such as about 10-100 millikelvin (mK) or about 4mK.
  • Structure for example, one or more of aluminum (Al), niobium (Nb), niobium nitride (NbN), titanium nitride (TiN) and niobium titanium nitride (NbTiN).
  • Al aluminum
  • Nb niobium
  • NbN niobium nitride
  • TiN titanium nitride
  • NbTiN niobium titanium nitride
  • the second A capacitor arm 220 for coupling is formed on the capacitor plate 22.
  • the capacitor arm 220 can be coupled with the adjacent magnetic flux control signal line 4 and/or the pulse control signal line 5, and can also be used to promote the realization of Q 1 and Q Coupling between 2 , or coupling with a circuit structure such as a reading resonant cavity.
  • the magnetic flux control signal line 4 can be arranged in a form surrounded by the first capacitor plate 21, It should be noted that the first capacitor plate 21 is not limited to an annular film. As long as there is a vacant area surrounded by the first capacitor plate 21 on the substrate, a mature semiconductor process can be directly used to form a signal transmission line. A part of the signal transmission line is formed in the vacant area, that is, is surrounded by the first capacitor plate 21 , so that it can serve as the magnetic flux control signal line 4 . In one embodiment, the magnetic flux control signal line 4 includes at least 1 turn of coil.
  • the two ends of the coil can be electrically connected to the signal transmission line on the other surface of the substrate through a TSV-based superconducting pillar.
  • a signal transmission line is used to transmit the magnetic flux control signal from the other surface of the substrate to the coil to achieve magnetic flux control of the qubit.
  • the magnetic flux control signal line 4 may include a first coil 41 and The second coil 42, and the first coil 41 and the second coil 42 are arranged alternately, and the current directions of the first coil 41 and the second coil 42 are opposite, so as to facilitate the adjustment of mutual inductance intensity and magnetic field flux.
  • the first coil 41 and the second coil 42 may be formed by winding two relatively independent transmission lines respectively (as shown in Figure 10), or they may be formed by winding the same transmission line in different directions (as shown in Figure 11). ).
  • the magnetic flux control signal line 4 includes a first coil 41 and a second coil 42 connected in series and with opposite winding directions, and the entire second coil 42 is located on the within the entire first coil 41 . It can be understood that the magnetic flux control signal line 4 includes two parts connected in series, one part forming the first coil 41 and the other part forming the second coil 42 . In view of the phenomenon that the central magnetic field is strong and the peripheral magnetic field is weak when the overall winding direction of the coil is consistent, this phenomenon can easily cause the magnetic field of the squid structure of each qubit on the quantum chip to be uneven.
  • two coils with opposite winding directions are arranged in series, and the entirety of the second coil 42 is located inside the entirety of the first coil 41.
  • This can relatively weaken the central magnetic field and strengthen the peripheral annular magnetic field, which is helpful. To achieve a certain degree of uniformity, or to achieve acceptable uniformity in a desired area.
  • the first coil 41 and the second coil 42 connected in series and with opposite winding directions can also be the above-mentioned thin film circuits, and the first coil 41 and the second coil 42 can be formed by photolithography. , electroplating and other processes introduced above are simultaneously prepared and formed.
  • the magnetic flux control signal line 4 formed on the substrate includes a transfer point 43 .
  • the transfer point 43 divides the signal line into two parts, one part forming the first coil 41 and the other part
  • the second coil 42 is formed, the winding direction of the signal line in the first coil 41 is opposite to the winding direction of the signal line in the second coil 42, and the first coil 41 and the second coil 42 are connected in series at the transfer point 43 .
  • the first capacitor plate 21 and the second capacitor plate 22 are both connected along the first Josephson junction 11 and the second Josephson junction 12 .
  • Symmetrically distributed that is, the film patterns of the first capacitor plate 21 and the second capacitor plate 22 are axially symmetrical.
  • the geometric center of the first capacitor plate 21 and the geometric center of the second capacitor plate 22 are at the same position. It should be noted that the specific implementation is not limited thereto.
  • the geometric shapes of the first capacitor plate 21 and the second capacitor plate 22 are relative to the first Josephson junction 11 and the second Josephson junction.
  • the distribution of junction 12 affects the magnitude of the induced currents of the two loops.
  • the geometric shapes of the first capacitor plate 21 and the second capacitor plate 22 can be adjusted according to the relative magnitudes of the induced currents of the two loops, and The positions are distributed relative to the first Josephson junction 11 and the second Josephson junction 12 .
  • the ground capacitance C 01 of the first capacitor plate 21 and the ground capacitance C 02 of the second capacitor plate 22 satisfy the following relationship: 100C 01 ⁇ C 02 or 100C 02 ⁇ C 01 .
  • the corresponding equivalent bit capacitance in the superconducting qubit circuit is C q ⁇ C 12 + C 01 , or C q ⁇ C 12 + C 02 , where C 12 is the first capacitor plate 21 and the first capacitor plate 21 .
  • the capacitance value formed by the capacitance effect between the two capacitor plates 22 Therefore, the parameters of one capacitor plate can be fixed and the other capacitor plate can be flexibly designed. This needs to be considered when using one of the capacitor plates to couple with other electrical component structures. For example, when using one of the capacitor plates to couple with a reading resonant cavity located on an opposite surface, it needs to be determined based on the coupling parameters. Therefore, the degree of flexibility in design is very high. important.
  • the structural form of the superconducting qubit circuit formed with a first partial circuit surrounding the first region and a second partial circuit surrounding the second region may not be limited to the above description.
  • Embodiment 2 will now be described from another perspective. It should be understood that in the following description, the superconducting qubit structure is equivalent to the quantum chip in the second embodiment above, and the first capacitor plate is equivalent to the first capacitor in the second embodiment above. The capacitor plate and the second capacitor plate are equivalent to the second capacitor plate in the second embodiment.
  • an embodiment of the present application provides a superconducting qubit structure, including a first capacitor plate 21 and a first capacitor plate 22 , as well as a first Josephson junction 11 and a second Josephson junction 12 .
  • the first capacitor plate 21 and the second capacitor plate are separated by 2
  • the first capacitor plate 22 surrounds the first capacitor plate 21
  • the first Josephson junction 11 and the second Josephson junction 12 are One end is connected to the first capacitor plate 21
  • the other end is connected to the first capacitor plate 22 .
  • the superconducting qubit structure in the embodiment of the present application is a thin film circuit structure formed on a substrate, and can be prepared and formed using a semiconductor process.
  • the first capacitor plate 21 is formed in the first region of the substrate, and the first capacitor plate 22 is formed
  • the second area is separated from the first area, and the second area surrounds the first area.
  • the first end of the first Josephson junction 11 is connected to the first capacitor plate 21
  • the second end of the first Josephson junction 11 is connected to the first capacitor plate 22
  • the first end of the second Josephson junction 12 is connected to the first capacitor plate 21
  • the second end of the second Josephson junction 12 is connected to the first capacitor plate 22
  • a magnetic flux control signal line 4 and a pulse control signal line 5 are arranged near 22 .
  • Q 1 and Q 2 are used to represent each superconducting qubit structure formed on the substrate in Figure 6 , where the superconducting qubit structure Q 1 and the superconducting qubit structure Q 2 represent Each qubit of includes a first capacitor plate 21 and a second capacitor plate 1.
  • the first capacitor plate 21 and the second capacitor plate 1 are not directly connected to the ground plane (GND), but have a The appropriate gap and the physical size of the gap are designed and determined according to the performance parameters of the quantum chip. It should be noted that the capacitance C 01 is formed between the first capacitor plate 21 and the ground plane (GND), and the capacitor C 01 is formed between the first capacitor plate 21 and the ground plane.
  • capacitor C 01 , capacitor C 02 and capacitor C 12 are formed between the first capacitor plate 21 and the second capacitor plate 12.
  • the values of capacitor C 01 , capacitor C 02 and capacitor C 12 can be calculated and determined according to the performance parameters of the quantum chip.
  • the physical sizes of the first capacitor plate 21 and the first capacitor plate 22 are calculated and determined.
  • the physical size of the capacitor arm 220 and the spacing between Q 1 and Q 2 can be determined according to parameter requirements such as the coupling emphasis of Q 1 and Q 2 .
  • the first Josephson junction 11 and the second One end of the Josephson junction 12 is connected to the first capacitor plate 21 and the other end is connected to the first capacitor plate 22 , thereby connecting the first capacitor plate 21 and the first capacitor plate 22 surrounding the first capacitor plate 21
  • Two loops are formed by division. As shown in FIG. 6 , one loop is formed by the first Josephson junction 11 and the second Josephson junction 12 as well as the upper part of the first capacitor plate 21 and the upper part of the first capacitor plate 22 .
  • the other loop is formed by the first Josephson junction 11 and the second Josephson junction 12 .
  • the loop is formed by the first Josephson junction 11 and the second Josephson junction 12 and the lower parts of the first capacitive plate 21 and the first capacitive plate 22 .
  • the current noise i brought into the magnetic flux noise generates a magnetic field in one direction in the area of the qubit circuit, and then in the two loops Induced currents i 1 and i 2 are formed in opposite directions.
  • the opposite induced currents can offset to a certain extent, which reduces the impact of noise on the deviation of the qubit frequency, thus helping to control the frequency of the qubit at the ideal position. . Therefore, the superconducting qubit structure provided by the embodiments of the present application helps to suppress the impact of magnetic flux noise on the operational accuracy of the qubit, and more accurately controls the frequency of the qubit at a position that is insensitive to magnetic flux.
  • At least one of the first capacitor plate 21 and the first capacitor plate 22 may be an annular film, as shown in FIG. 8 .
  • the first capacitor plate 21 and the first capacitor plate 22 are not limited to the above shapes, as long as the first capacitor plate 22 can surround the first capacitor plate 21, as shown in Figure 7 .
  • the first capacitor plate 21 may also be a circular film, as shown in Figures 9, 10, 11 and 12. It can be understood that annular films and circular films are thin film electrical structures with an annular or circular pattern formed on a substrate.
  • the superconducting qubit structure of the embodiment of the present application can be obtained by depositing, patterning, etc. the superconducting material directly using mature semiconductor processes.
  • the thickness of the deposition can be micron or nanometer, and the superconducting material can be at or below the critical level.
  • materials that exhibit superconducting properties such as aluminum, niobium, tantalum or titanium nitride, etc.
  • the specific implementation is not limited to these types, Materials that exhibit superconducting properties at temperatures equal to or lower than the critical temperature can be used to form the thin film electrical structure, for example, aluminum (Al), niobium (Nb), niobium nitride (NbN), titanium nitride (TiN) ) and one or more of niobium titanium nitride (NbTiN).
  • the first capacitor plate 22 A capacitor arm 220 for coupling is formed on the capacitor arm 220.
  • the capacitor arm 220 is coupled to the adjacent magnetic flux control signal line 4 and/or the pulse control signal line 6, and can also be used to promote the coupling between Q 1 and Q 2 . Or coupling with circuit structures such as read resonant cavities.
  • the superconducting qubit structure also includes a magnetic flux control signal line 4.
  • the first capacitor plate 21 surrounds the magnetic flux control signal line 4.
  • the magnetic flux control signal line 4 includes at least 1 turn of coil. As shown in Figure 9, the two ends of the coil can be electrically connected to the signal transmission line on the other surface of the substrate through a TSV-based superconducting pillar.
  • a signal transmission line is used to transmit the magnetic flux control signal from the other surface of the substrate to the coil to achieve magnetic flux control of the qubit.
  • the magnetic flux control signal line 4 may include a first coil 41 and a second coil 42 , and the first coil 41 and the second coil 42 are arranged alternately, The current directions of the first coil 41 and the second coil 42 are opposite.
  • the first coil 41 and the second coil 42 may be formed by two relatively independent transmission lines wound along different directions (as shown in FIG. 10 ), or they may be formed by the same transmission line wound along different directions (as shown in FIG. 10 ). As shown in Figure 11), it is easy to adjust the mutual inductance intensity and magnetic field flux.
  • the magnetic flux control signal line 4 includes a first coil 41 and a second coil 42 connected in series and with opposite winding directions, and the entire second coil 42 is located on the within the entire first coil 41 . It can be understood that the magnetic flux control signal line 4 includes two parts connected in series, one part forming the first coil 41 and the other part forming the second coil 42 . In view of the fact that when the overall winding direction of the coil is consistent, the central magnetic field is strong and the peripheral magnetic field is weak, which can easily cause the magnetic field of the squid structure of each qubit on the quantum chip to be uneven. In this embodiment, the two winding directions are opposite.
  • the first coil 41 and the second coil 42 connected in series and with opposite winding directions can also be the above-mentioned thin film circuits, and the first coil 41 and the second coil 42 can be formed by photolithography. , electroplating and other processes introduced above are simultaneously prepared and formed.
  • the magnetic flux control signal line 4 formed on the substrate includes a transfer point.
  • the transfer point 43 divides the signal line into two parts, one part forming the first coil 41 and the other part forming the first coil 41 .
  • the winding direction of the signal line in the first coil 41 is opposite to the winding direction of the signal line in the second coil 42 , and the first coil 41 and the second coil 42 are connected in series at the transfer point 43 .
  • the first capacitor plate 21 and the first capacitor plate 22 are symmetrical along the connection line of the first Josephson junction 11 and the second Josephson junction 12
  • the distribution, that is, the film patterns of the first capacitor plate 21 and the first capacitor plate 22 are in an axially symmetrical form.
  • the geometric center of the first capacitor plate 21 is at the same position as the geometric center of the first capacitor plate 22 . It should be noted that the specific The application is not limited to this.
  • the geometry of the first capacitor plate 21 and the first capacitor plate 22 and the distribution relative to the first Josephson junction 11 and the second Josephson junction 12 affect the two loops. The size of the induced current.
  • the geometric shapes of the first capacitive plate 21 and the first capacitive plate 22 and their relative positions relative to the first Josephson junction 11 can be adjusted according to the relative sizes of the induced currents of the two loops. and the second Josephson junction 12 distributed positions.
  • the ground capacitance C 01 of the first capacitor plate 21 and the ground capacitance C 02 of the first capacitor plate 22 satisfy the following relationship: 100C 01 ⁇ C 02 , or 100C 022 ⁇ C 01 .
  • the corresponding equivalent bit capacitance in the qubit circuit is C q ⁇ C 12 +C 01 , or C q ⁇ C 12 +C 02 . Therefore, the parameters of one capacitive plate can be fixed and another capacitive plate can be designed flexibly. This needs to be considered when using one of the capacitive plates to couple with other electrical component structures. For example, when using one of the capacitive plates to couple with a read resonant cavity located on a different surface, it needs to be determined based on the coupling parameters. Therefore, the degree of flexible design is very important.
  • the function of the read resonant cavity in the quantum chip is to read the information of the qubits, for example, by reading the information of the qubits in a non-destructive reading manner.
  • the read resonant cavity can be arranged on the capacitor arm 220 The adjacent position forms a coupling with the capacitive arm.
  • the qubit circuit is formed on the first surface (for example, the top surface) of the substrate, the first capacitor plate 21 is an annular film, and an area surrounded by the annular film is formed.
  • the read resonant cavity is formed on the second surface (for example, the bottom surface) of the substrate, one end of the read resonant cavity is connected to the coupling capacitor through a dielectric element, and the other end is connected to the read signal line, the dielectric
  • the element penetrates the first surface (eg, top surface) and the second surface (eg, bottom surface) of the substrate and is electrically and physically connected to the coupling capacitor and one end of the read chamber.
  • the dielectric elements may be formed by photolithography, electroplating, etc., and patterned accordingly.
  • the first capacitive plate 21 is not limited to an annular film, and one end of the reading resonant cavity can also be directly coupled to the first capacitive plate 21 through a dielectric element.
  • Embodiment 3 An embodiment of a quantum chip using four capacitor plates
  • FIG 13 is a schematic structural diagram of a quantum chip using four capacitor plates in this application.
  • Q 1 and Q 2 represent two qubits located on the quantum chip.
  • the superconducting qubit circuit includes a first Josephson junction 11 and a second Josephson junction 12 , a first capacitor plate 21 and a second capacitor plate 22 , and a third capacitor plate 23 and a fourth capacitor plate 24, wherein the first capacitor plate 21 and the second capacitor plate 22 are independently located at both ends of the first Josephson junction 11 , the third plate 23 and the fourth plate 24 are independently located at both ends of the second Josephson junction 12 , and the first capacitor plate 21 and the fourth capacitor plate 24 non-contact cross-electrical connection between the second capacitor plate 22 and the third capacitor plate 23 .
  • the non-contact cross electrical connection can be formed using the electrical connection structure described above.
  • Figure 14 is a schematic structural diagram of an embodiment of the magnetic flux control signal line of the present application.
  • the magnetic flux control signal line 4 and the superconducting qubit circuit can be formed on the same surface or on different surfaces.
  • the magnetic flux control signal line may also be located on one side of the superconducting qubit circuit.
  • the magnetic flux control signal line and the superconducting qubit circuit can be independently formed on the top surface of the same substrate.
  • the surface and the bottom surface may also be formed on the bottom surface of one substrate and the other on the top surface of another substrate, and the bottom surface of one substrate faces the top surface of the other substrate.
  • the flux control signal line 4 includes a coil.
  • the coils include a first coil 41 and a second coil 42, and the first coil 41 and the second coil 42 are arranged alternately.
  • the currents of the first coil 41 and the second coil 42 are In the opposite direction.
  • Embodiments of the present application also provide a quantum computer.
  • the quantum computer includes a quantum chip, and the quantum chip is provided with at least the superconducting qubit structure described in the embodiments of the present application.
  • the quantum chip in the above quantum computer is similar to the above structure and has the same beneficial effects as the above quantum chip embodiment, so no further description is given.
  • those skilled in the art should refer to the description of the above quantum chip embodiments to understand them. To save space, they will not be described again here.
  • the fabrication of a quantum chip may require deposition of one or more materials, such as superconductors, dielectrics and/or metals. Depending on the materials selected, these materials may be deposited using deposition processes such as chemical vapor deposition, physical vapor deposition (eg, evaporation or sputtering), or epitaxial techniques, as well as other deposition processes.
  • the fabrication process of the quantum chip described in the embodiments of this application may require the removal of one or more materials from the device during the manufacturing process. Depending on the material to be removed, the removal process may include, for example, wet etching techniques, dry etching techniques, or lift-off processes. Materials forming circuit elements described herein may be patterned using known lithographic techniques (eg, photolithography or electron beam exposure).
  • B corresponding to A means that B is associated with A, and B can be determined based on A.
  • determining B based on A does not mean determining B only based on A.
  • B can also be determined based on A and/or other information.
  • the term "correspondence” can mean that there is a direct correspondence or indirect correspondence between the two, or it can also mean that there is an association between the two, or it can also mean indicating and being instructed, configuring and being configured, etc. relation.
  • the disclosed systems, devices and methods can be implemented in other ways.
  • the device embodiments described above are only illustrative.
  • the division of the units is only a logical function division. In actual implementation, there may be other division methods.
  • multiple units or components may be combined or can be integrated into another system, or some features can be ignored, or not implemented.
  • the coupling or direct coupling or communication connection between each other shown or discussed may be through some interfaces, devices or units. Continuous coupling or communication connection, which may be electrical, mechanical or other forms.
  • the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
  • each functional unit in each embodiment of the present application can be integrated into one processing unit, each unit can exist physically alone, or two or more units can be integrated into one unit.
  • the computer program product includes one or more computer instructions.
  • the computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device.
  • the computer instructions may be stored in or transmitted from one computer-readable storage medium to another, e.g., the computer instructions may be transferred from a website, computer, server, or data center Transmission to another website, computer, server or data center through wired (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (such as infrared, wireless, microwave, etc.) means.
  • the computer-readable storage medium may be any available medium that can be read by a computer or a data storage device such as a server or data center integrated with one or more available media.
  • the available media may be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., digital video discs (DVD)) or semiconductor media (e.g., solid state disks (SSD) )wait.
  • magnetic media e.g., floppy disks, hard disks, magnetic tapes
  • optical media e.g., digital video discs (DVD)
  • semiconductor media e.g., solid state disks (SSD)

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Abstract

Provided are a quantum chip and a quantum computer. The quantum chip comprises: a superconducting quantum bit circuit, the superconducting quantum bit circuit forming a first part circuit surrounding a first area and a second part circuit surrounding a second area; and a magnetic flux regulation and control signal line coupled with the superconducting quantum bit circuit, induced currents in opposite directions being obtained in the first part circuit and the second part circuit by means of a regulation and control signal applied by the magnetic flux regulation and control signal line. The quantum chip provided by the present application helps to suppress the impact of noises in regulating and controlling magnetic fluxes on regulation and control of quantum bits.

Description

量子芯片及量子计算机Quantum chips and quantum computers
本申请要求于2022年08月31日提交中国专利局、申请号为202211061364.1、申请名称为“超导量子比特结构及量子计算机”的中国专利申请的优先权,要求于2022年09月22日提交中国专利局、申请号为202211158061.1、申请名称为“量子芯片及量子计算机”的中国专利申请的优先权,这些专利的全部内容通过引用结合在本申请中。This application requires the priority of the Chinese patent application with the application number 202211061364.1 and the application name "Superconducting Qubit Structure and Quantum Computer" submitted to the China Patent Office on August 31, 2022. It is required to be submitted on September 22, 2022. Priority is granted to the Chinese Patent Office with application number 202211158061.1 and the application title "Quantum Chip and Quantum Computer". The entire contents of these patents are incorporated into this application by reference.
技术领域Technical field
本申请涉及计算技术领域,并且更为具体地,涉及一种量子芯片及量子计算机。The present application relates to the field of computing technology, and more specifically, to a quantum chip and a quantum computer.
背景技术Background technique
量子芯片是量子计算机的核心部件。超导物理体系构建量子芯片的基本思路是:将由约瑟夫森结并联形成的squid,与电容极板并联,基于该并联结构形成的超导量子比特电路即作为量子芯片上执行量子计算的基本单元——量子比特。量子比特可通过外加电磁信号进行调控,其中,可以通过在量子芯片上的磁通调控信号线(Z-control line)施加信号调控squid的磁通量完成量子比特频率的调控,进而实现一系列的量子比特操作。目前,相关技术的量子芯片执行量子计算时,量子比特对调控磁通的噪声十分敏感,其频率易受到噪声的影响而偏离理想位置,进而影响量子比特调控的精度。Quantum chip is the core component of quantum computer. The basic idea of constructing a quantum chip using a superconducting physical system is: a squid formed by connecting Josephson junctions in parallel is connected in parallel with a capacitor plate. The superconducting qubit circuit formed based on this parallel structure serves as the basic unit for performing quantum calculations on the quantum chip. —Qubits. Qubits can be controlled by applying external electromagnetic signals. Among them, the magnetic flux of squid can be controlled by applying a signal to the magnetic flux control signal line (Z-control line) on the quantum chip to complete the control of the qubit frequency, thereby realizing a series of qubits. operate. At present, when quantum chips of related technologies perform quantum calculations, the qubits are very sensitive to the noise of the magnetic flux control, and their frequency is easily affected by the noise and deviates from the ideal position, thereby affecting the accuracy of qubit control.
发明内容Contents of the invention
本申请提供一种量子芯片及量子计算机。下面对本申请涉及的各个方面进行介绍。This application provides a quantum chip and a quantum computer. Each aspect involved in this application is introduced below.
第一方面,提供了一种量子芯片,包括:超导量子比特电路,所述超导量子比特电路形成包围第一区域的第一部分电路和包围第二区域的第二部分电路;以及,与所述超导量子比特电路耦合的磁通调控信号线,磁通调控信号线施加的调控信号在所述第一部分电路和所述第二部分电路获得方向相反的感应电流。In a first aspect, a quantum chip is provided, including: a superconducting qubit circuit forming a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region; and, with the The superconducting qubit circuit is coupled with a magnetic flux control signal line, and the control signal applied by the magnetic flux control signal line obtains induced currents in opposite directions in the first part of the circuit and the second part of the circuit.
可选地,所述超导量子比特电路包括:电容极板;及第一约瑟夫森结和第二约瑟夫森结,所述第一约瑟夫森结和所述第二约瑟夫森结并联,且所述第一约瑟夫森结的一端和所述第二约瑟夫森结的一端均与所述电容极板连接,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端互连并且接地。Optionally, the superconducting qubit circuit includes: a capacitor plate; and a first Josephson junction and a second Josephson junction, the first Josephson junction and the second Josephson junction are connected in parallel, and the One end of the first Josephson junction and one end of the second Josephson junction are both connected to the capacitor plate, the other end of the first Josephson junction and the other end of the second Josephson junction are interconnected, and Ground.
可选地,所述超导量子比特电路包括第一电连接结构,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端通过所述第一电连接结构互连,且所述第一电连接结构与所述电容极板非接触的交叉。Optionally, the superconducting qubit circuit includes a first electrical connection structure, and the other end of the first Josephson junction and the other end of the second Josephson junction are interconnected through the first electrical connection structure, And the first electrical connection structure intersects with the capacitor plate in a non-contact manner.
可选地,所述超导量子比特电路包括第一电连接结构和第二电连接结构,所述第一约瑟夫森结的一端和所述第二约瑟夫森结的一端通过所述第一电连接结构连接,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端通过所述第二电连接结构连接,且所述第二电连接结构与所述第一电连接结构非接触的交叉。Optionally, the superconducting qubit circuit includes a first electrical connection structure and a second electrical connection structure, and one end of the first Josephson junction and one end of the second Josephson junction are connected through the first electrical connection. Structural connection, the other end of the first Josephson junction and the other end of the second Josephson junction are connected through the second electrical connection structure, and the second electrical connection structure and the first electrical connection structure Non-contact crossover.
可选地,所述超导量子比特电路包括:第一电容极板和第二电容极板;及第一约瑟夫森结和第二约瑟夫森结,所述第一约瑟夫森结的一端和所述第二约瑟夫森结的一端均与所 述第一电容极板连接,且所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端均与所述第二电容极板连接。Optionally, the superconducting qubit circuit includes: a first capacitor plate and a second capacitor plate; and a first Josephson junction and a second Josephson junction, one end of the first Josephson junction and the The second Josephson knot has one end connected to all The first capacitor plate is connected, and the other end of the first Josephson junction and the other end of the second Josephson junction are both connected to the second capacitor plate.
可选地,所述第一电容极板和所述第二电容极板分隔设置。Optionally, the first capacitor plate and the second capacitor plate are arranged separately.
可选地,所述第一电容极板与所述第二电容极板非接触的交叉。Optionally, the first capacitor plate and the second capacitor plate intersect in a non-contact manner.
可选地,所述第二电容极板包围所述第一电容极板,且所述第一区域和所述第二区域位于所述第二电容极板和所述第一电容极板之间。Optionally, the second capacitor plate surrounds the first capacitor plate, and the first region and the second region are located between the second capacitor plate and the first capacitor plate. .
可选地,所述第一电容极板和所述第二电容极板沿着所述第一约瑟夫森结和所述第二约瑟夫森结的连线均呈对称分布。Optionally, the first capacitor plate and the second capacitor plate are symmetrically distributed along the connection line of the first Josephson junction and the second Josephson junction.
可选地,所述第一电容极板的几何中心与所述第二电容极板的几何中心重叠。Optionally, the geometric center of the first capacitor plate overlaps the geometric center of the second capacitor plate.
可选地,所述第一电容极板的对地电容C01和所述第二电容极板的对地电容C02满足以下关系:100C01≤C02,或100C02≤C01Optionally, the ground capacitance C 01 of the first capacitor plate and the ground capacitance C 02 of the second capacitor plate satisfy the following relationship: 100C 01 ≤ C 02 , or 100C 02C 01 .
可选地,所述第二电容极板为环形膜。Optionally, the second capacitor plate is an annular membrane.
可选地,所述第二电容极板上形成有用于耦合的电容臂。Optionally, a capacitor arm for coupling is formed on the second capacitor plate.
可选地,所述第一电容极板为环形膜或圆形膜。Optionally, the first capacitor plate is an annular membrane or a circular membrane.
可选地,所述第一电容极板包围所述磁通调控信号线。Optionally, the first capacitor plate surrounds the magnetic flux control signal line.
可选地,所述超导量子比特电路包括:第一约瑟夫森结和第二约瑟夫森结;第一电容极板和第二电容极板,所述第一电容极板和所述第二电容极板分别独立的位于所述第一约瑟夫森结的两端;以及,第三电容极板和第四电容极板,所述第三电容极板和所述第四电容极板分别独立的位于所述第二约瑟夫森结的两端;且所述第一电容极板和所述第四电容极板之间,以及所述第二电容极板和所述第三电容极板之间非接触的交叉电连接。Optionally, the superconducting qubit circuit includes: a first Josephson junction and a second Josephson junction; a first capacitor plate and a second capacitor plate, the first capacitor plate and the second capacitor The plates are independently located at both ends of the first Josephson junction; and, a third capacitor plate and a fourth capacitor plate, the third capacitor plate and the fourth capacitor plate are independently located at Both ends of the second Josephson junction; and there is no contact between the first capacitor plate and the fourth capacitor plate, and between the second capacitor plate and the third capacitor plate. cross electrical connections.
可选地,所述磁通调控信号线和所述超导量子比特电路形成于同一表面,且所述磁通调控信号线位于所述超导量子比特电路的一侧。Optionally, the magnetic flux control signal line and the superconducting qubit circuit are formed on the same surface, and the magnetic flux control signal line is located on one side of the superconducting qubit circuit.
可选地,所述磁通调控信号线和所述超导量子比特电路形成于不同的表面。Optionally, the magnetic flux control signal line and the superconducting qubit circuit are formed on different surfaces.
可选地,所述磁通调控信号线包括线圈。Optionally, the magnetic flux control signal line includes a coil.
可选地,所述线圈包括第一线圈和第二线圈,且所述第一线圈和所述第二线圈相间设置,所述第一线圈和所述第二线圈的电流方向相反。Optionally, the coil includes a first coil and a second coil, and the first coil and the second coil are arranged alternately, and the current directions of the first coil and the second coil are opposite.
第二方面,提供量子计算机,所述量子计算机设置有第一方面所述的量子芯片。A second aspect provides a quantum computer provided with the quantum chip described in the first aspect.
本申请提供的量子芯片包括超导量子比特电路及与所述超导量子比特电路耦合的磁通调控信号线,且所述超导量子比特电路形成包围第一区域的第一部分电路和包围第二区域的第二部分电路;通过磁通调控信号线施加的调控信号在第一区域和第二区域产生相应的磁通量,进而在所述第一部分电路和所述第二部分电路获得方向相反的感应电流,相反的感应电流一定程度上相互抵消,降低噪声对约瑟夫森结能量的影响,进而降低噪声对量子比特频率的影响,进而有助于减小量子比特频率的偏离,确保量子比特的操作精度。The quantum chip provided by this application includes a superconducting qubit circuit and a magnetic flux control signal line coupled with the superconducting qubit circuit, and the superconducting qubit circuit forms a first part of the circuit surrounding the first region and a second part of the circuit surrounding the first region. The second part of the circuit in the area; the control signal applied through the magnetic flux control signal line generates corresponding magnetic flux in the first area and the second area, and then obtains induced currents in opposite directions in the first part of the circuit and the second part of the circuit. , the opposite induced currents cancel each other to a certain extent, reducing the impact of noise on the Josephson junction energy, thereby reducing the impact of noise on the qubit frequency, which in turn helps reduce the deviation of the qubit frequency and ensures the operational accuracy of the qubit.
附图说明Description of drawings
图1为相关技术中量子芯片上量子比特的结构示意图;Figure 1 is a schematic structural diagram of a qubit on a quantum chip in related technology;
图2为本申请的实施例提供的一种量子芯片的原理图;Figure 2 is a schematic diagram of a quantum chip provided by an embodiment of the present application;
图3为本申请采用单个电容极板的量子芯片的第一个实施示例结构示意图;Figure 3 is a schematic structural diagram of the first implementation example of a quantum chip using a single capacitor plate in this application;
图4为本申请采用单个电容极板的量子芯片的第二个实施示例结构示意图; Figure 4 is a schematic structural diagram of a second implementation example of a quantum chip using a single capacitor plate in this application;
图5为本申请采用单个电容极板的量子芯片的第三个实施示例结构示意图;Figure 5 is a schematic structural diagram of a third implementation example of a quantum chip using a single capacitor plate in this application;
图6为本申请采用两个电容极板的量子芯片的第一个实施示例结构示意图;Figure 6 is a schematic structural diagram of the first implementation example of a quantum chip using two capacitor plates in this application;
图7为本申请采用两个电容极板的量子芯片的第二个实施示例结构示意图;Figure 7 is a schematic structural diagram of a second implementation example of a quantum chip using two capacitor plates in this application;
图8为本申请采用两个电容极板的量子芯片的第三个实施示例结构示意图;Figure 8 is a schematic structural diagram of a third implementation example of a quantum chip using two capacitor plates in this application;
图9为本申请采用两个电容极板的量子芯片的第四个实施示例结构示意图;Figure 9 is a schematic structural diagram of a fourth implementation example of a quantum chip using two capacitor plates in this application;
图10为本申请采用两个电容极板的量子芯片的第五个实施示例结构示意图;Figure 10 is a schematic structural diagram of the fifth implementation example of a quantum chip using two capacitor plates in this application;
图11为本申请采用两个电容极板的量子芯片的第六个实施示例结构示意图;Figure 11 is a schematic structural diagram of the sixth implementation example of a quantum chip using two capacitor plates in this application;
图12为本申请采用两个电容极板的量子芯片的第七个实施示例结构示意图;Figure 12 is a schematic structural diagram of the seventh implementation example of a quantum chip using two capacitor plates in this application;
图13为本申请采用四个电容极板的量子芯片的实施结构示意图;Figure 13 is a schematic diagram of the implementation structure of a quantum chip using four capacitor plates in this application;
图14为本申请磁通调控信号线的一个实施例的结构示意图。Figure 14 is a schematic structural diagram of an embodiment of the magnetic flux control signal line of the present application.
附图标记说明:Explanation of reference symbols:
11-第一约瑟夫森结,12-第二约瑟夫森结,11-First Josephson knot, 12-Second Josephson knot,
21-第一电容极板,22-第二电容极板,220-电容臂,23-第三电容极板,24-第四电容极板,21-the first capacitor plate, 22-the second capacitor plate, 220-the capacitor arm, 23-the third capacitor plate, 24-the fourth capacitor plate,
31-第一电连接结构,32-第二电连接结构,31-first electrical connection structure, 32-second electrical connection structure,
4-磁通调控信号线,41-第一线圈,42-第二线圈,43-转接点,4-Magnetic flux control signal line, 41-first coil, 42-second coil, 43-transfer point,
5-脉冲调控信号线。5-Pulse control signal line.
具体实施方式Detailed ways
下面将结合附图,对本申请中的技术方案进行描述。应理解,下面通过参考附图描述的实施例是示例性的,仅用于解释本申请,而不能解释为对本申请的限制。The technical solutions in this application will be described below with reference to the accompanying drawings. It should be understood that the embodiments described below with reference to the drawings are exemplary and are only used to explain the present application and cannot be construed as limiting the present application.
为使本申请实施例的目的、技术方案和优点更加清楚,现在参考附图描述一个或多个实施例,其中,贯穿全文相似的附图标记用于指代相似的组件。在下面的描述中,出于解释的目的,阐述了许多具体细节,以便提供对一个或多个实施例的更透彻的理解。然而,很明显,在各种情况下,可以在没有这些具体细节的情况下实践一个或多个实施例,各个实施例在不矛盾的前提下可以相互结合相互引用。In order to make the objectives, technical solutions and advantages of the embodiments of the present application more clear, one or more embodiments are now described with reference to the accompanying drawings, wherein similar reference numerals are used to refer to similar components throughout. In the following description, for the purpose of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It will be apparent, however, that in various circumstances one or more embodiments may be practiced without these specific details and that the various embodiments may be combined and referenced with each other provided they are not inconsistent with each other.
需要说明的是,本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别类似的对象,而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便这里描述的本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施。此外,术语“包括”和“具有”以及他们的任何变形,意图在于覆盖不排他的包含,例如,包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元,而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。It should be noted that the terms "first", "second", etc. in the description and claims of this application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances so that the embodiments of the application described herein can be practiced in sequences other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, e.g., a process, method, system, product, or apparatus that encompasses a series of steps or units and need not be limited to those explicitly listed. Those steps or elements may instead include other steps or elements not expressly listed or inherent to the process, method, product or apparatus.
另外,应该理解的是,当层(或膜)、区域、图案或结构被称作在衬底、层(或膜)、区域和/或图案“上”时,它可以直接位于另一个层或衬底上,和/或还可以存在插入层。另外,应该理解,当层被称作在另一个层“下”时,它可以直接位于另一个层下,和/或还可以存在一个或多个插入层。另外,可以基于附图进行关于在各层“上”和“下”的指代。In addition, it will be understood that when a layer (or film), region, pattern or structure is referred to as being "on" a substrate, layer (or film), region and/or pattern, it can be directly on another layer or structure. on the substrate, and/or intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and/or one or more intervening layers may also be present. In addition, references to "on" and "under" each layer may be made based on the drawings.
根据构建量子比特所采用的不同物理体系,量子比特在物理实现方式上包括超导物理体系、半导体量子点物理体系、离子阱、金刚石空位、拓扑量子、光子等。超导物理体系 是目前进展最快最好的一种固体量子计算实现方法。基于超导物理体系的超导量子比特电路的能级结构可通过外加电磁信号进行调控,电路的设计定制的可控性强。同时,得益于基于现有的成熟集成电路工艺,超导物理体系具有多数量子物理体系难以比拟的可扩展性。According to the different physical systems used to construct qubits, the physical implementation methods of qubits include superconducting physical systems, semiconductor quantum dot physical systems, ion traps, diamond vacancies, topological quantum, photons, etc. Superconducting physics system It is currently the fastest and best way to implement solid-state quantum computing. The energy level structure of superconducting qubit circuits based on superconducting physical systems can be controlled by external electromagnetic signals, and the design and customization of the circuits are highly controllable. At the same time, thanks to the existing mature integrated circuit technology, the superconducting physics system has scalability that is unmatched by most quantum physics systems.
在超导物理体系中,Transmons为一种常用的量子比特的构造,结合图1所示,量子比特包括电容,及一端接地、另一端与该电容连接的超导量子干涉装置squid,其中,squid的等效临界电流Ic的大小由外磁场Φe调节。该电容常为十字型平行板电容,参见图1所示,十字型电容板Cq被接地平面GND包围,且十字型电容板与接地平面GND之间具有间隙,超导量子干涉装置squid的一端连接至十字型电容板,另一端连接至接地平面GND,由于十字型电容板的第一端用于连接超导量子干涉装置squid,第二端用于与读取谐振腔耦合,第一端和第二端的附近需要预留一定的空间用于布线,例如,第一端的附近需预留布置脉冲调控信号线和磁通调控信号线(Z-control line)的空间,十字型电容板的另外两端可以用于与相邻量子比特耦合。In the superconducting physics system, Transmons is a commonly used qubit structure. As shown in Figure 1, the qubit includes a capacitor, and a superconducting quantum interference device squid with one end connected to ground and the other end connected to the capacitor. Among them, squid The equivalent critical current I c is adjusted by the external magnetic field Φ e . The capacitor is often a cross-shaped parallel plate capacitor, as shown in Figure 1. The cross-shaped capacitor plate C q is surrounded by the ground plane GND, and there is a gap between the cross-shaped capacitor plate and the ground plane GND. One end of the superconducting quantum interference device squid Connect to the cross-shaped capacitive plate, and the other end is connected to the ground plane GND. Since the first end of the cross-shaped capacitive plate is used to connect the superconducting quantum interference device squid, the second end is used to couple with the reading resonant cavity, and the first end and A certain space needs to be reserved near the second end for wiring. For example, space needs to be reserved near the first end for the pulse control signal line and the magnetic flux control signal line (Z-control line). In addition, the cross-shaped capacitor plate Both ends can be used to couple to adjacent qubits.
根据量子比特频率计算公式可知量子比特频率ω10与电容的静电能EC及squid的能量EJ有关,squid的能量EJ随外磁场变化,因此可通过squid的能量EJ对外磁场的变化响应完成量子比特频率的控制调节。磁通调控信号线(Z-control line)作为实现外磁场Φe调控的结构,一般布置在squid旁,利用施加在磁通调控信号线(Z-control line)上的电流产生外磁场Φe,外磁场穿过squid区域引起该squid区域量子比特频率的变化。穿透该squid环路的磁通量受施加在磁通调控信号线的电信号产生的磁场大小、磁通调控信号线与该squid环路之间的互感强度M及磁通噪声等因素的影响。磁通噪声是磁通调控信号中电流波动引起的固有噪声或磁通调控信号携带的额外信号引起的磁通量噪声,磁通噪声会使量子比特频率发生波动和偏离。According to the calculation formula of qubit frequency It can be seen that the qubit frequency ω 10 is related to the electrostatic energy E C of the capacitor and the energy E J of the squid. The energy E J of the squid changes with the external magnetic field. Therefore, the control of the qubit frequency can be completed by the response of the energy E J of the squid to changes in the external magnetic field. adjust. The magnetic flux control signal line (Z-control line) is a structure that controls the external magnetic field Φ e . It is generally arranged next to the squid. The current applied to the magnetic flux control signal line (Z-control line) is used to generate the external magnetic field Φ e . The external magnetic field passing through the squid region causes changes in the qubit frequency of the squid region. The magnetic flux penetrating the squid loop is affected by factors such as the magnitude of the magnetic field generated by the electrical signal applied to the flux control signal line, the mutual inductance strength M between the flux control signal line and the squid loop, and magnetic flux noise. Magnetic flux noise is the inherent noise caused by current fluctuations in the magnetic flux control signal or the magnetic flux noise caused by the additional signals carried by the magnetic flux control signal. The magnetic flux noise will cause the qubit frequency to fluctuate and deviate.
为了抑制磁通噪声,通常要求施加在磁通调控信号线(Z-control line)上的电流具有较高的精确度,但是这种方式对信号控制要求较高,并且很难抑制固有噪声。In order to suppress magnetic flux noise, the current applied to the magnetic flux control signal line (Z-control line) is usually required to have high accuracy. However, this method requires high signal control and is difficult to suppress inherent noise.
针对相关技术的量子芯片执行量子计算时,量子比特频率易受到磁通噪声的影响,使得量子比特频率偏离理想位置影响量子比特调控的精度的问题,本申请实施例提供一种量子芯片及量子计算机,以降低磁通噪声对量子比特调控的影响。In order to solve the problem that when a quantum chip of related technologies performs quantum calculations, the qubit frequency is easily affected by magnetic flux noise, causing the qubit frequency to deviate from the ideal position and affecting the accuracy of qubit control, embodiments of the present application provide a quantum chip and a quantum computer. , to reduce the impact of magnetic flux noise on qubit control.
图2为本申请的实施例提供的一种量子芯片的原理图。Figure 2 is a schematic diagram of a quantum chip provided by an embodiment of the present application.
参照图2所示,本申请实施例提供的一种量子芯片,包括超导量子比特电路,以及与所述超导量子比特电路耦合的磁通调控信号线,其中:所述超导量子比特电路形成包围第一区域的第一部分电路和包围第二区域的第二部分电路,磁通调控信号线施加的调控信号在所述第一部分电路和所述第二部分电路获得方向相反的感应电流。Referring to Figure 2, a quantum chip provided by an embodiment of the present application includes a superconducting qubit circuit, and a magnetic flux control signal line coupled with the superconducting qubit circuit, wherein: the superconducting qubit circuit A first partial circuit surrounding the first area and a second partial circuit surrounding the second area are formed, and the control signal applied by the magnetic flux control signal line obtains induced currents in opposite directions in the first partial circuit and the second partial circuit.
本申请实施例中的超导量子比特电路为薄膜电路结构,可以直接利用半导体工艺制备形成于衬底上。结合图2的示意,在本申请实施例中,量子比特响应于电流信号产生的外磁场进行频率调节时,磁通调控信号线传输的电流信号I+i(其中,i为噪声信号)的作用下,在第一区域和第二区域分别产生相应的磁通量,噪声信号i在所述第一部分电路产生感应电流i1,在所述第二部分电路产生感应电流i2,且感应电流i1和i2的方向相反,相反的感应电流i1和i2一定程度上相互抵消,这降低了噪声对squid等效的约瑟夫森结的能量的影响,进而降低了噪声对量子比特频率的影响,有助于降低量子比特频率的偏离,提高量子比特操作精度。本申请实施例中,量子比特频率的稳定性提高有助于改善量子比特的 退相干时间。需要说明的是,图2中示意了噪声信号i分别在第一部分电路、第二部分电路产生的感应电流的方向,噪声信号i在超导量子比特电路产生的感应电流是由感应电流i1和i2的相互作用后的结果。The superconducting qubit circuit in the embodiment of the present application is a thin film circuit structure, which can be directly prepared and formed on the substrate using a semiconductor process. Combined with the diagram of Figure 2, in the embodiment of the present application, when the qubit adjusts the frequency in response to the external magnetic field generated by the current signal, the magnetic flux regulates the role of the current signal I+i (where i is the noise signal) transmitted by the signal line. Under , corresponding magnetic fluxes are generated in the first area and the second area respectively, the noise signal i generates an induced current i 1 in the first part of the circuit, and an induced current i 2 is generated in the second part of the circuit, and the induced currents i 1 and The direction of i 2 is opposite, and the opposite induced currents i 1 and i 2 cancel each other to a certain extent, which reduces the impact of noise on the energy of the equivalent Josephson junction of squid, thereby reducing the impact of noise on the frequency of the qubit, with Helps reduce the deviation of qubit frequency and improves the accuracy of qubit operation. In the embodiments of this application, the improvement of the stability of the qubit frequency helps to improve the performance of the qubit. Decoherence time. It should be noted that Figure 2 illustrates the directions of the induced currents generated by the noise signal i in the first part of the circuit and the second part of the circuit respectively. The induced current generated by the noise signal i in the superconducting qubit circuit is composed of the induced current i 1 and The result after the interaction of i 2 .
下面结合图3至图14进一步描述本申请的实施例。Embodiments of the present application are further described below with reference to FIGS. 3 to 14 .
实施例一:采用单个电容极板的量子芯片的实施例 Embodiment 1: An embodiment of a quantum chip using a single capacitor plate
图3至图5为本申请采用单个电容极板的量子芯片的实施结构示意图,Q1和Q2表示位于量子芯片上的两个量子比特,下面结合图3至图5进一步描述采用单个电容极板的量子芯片的实施例。Figures 3 to 5 are schematic diagrams of the implementation structure of a quantum chip using a single capacitor plate in this application. Q 1 and Q 2 represent two qubits located on the quantum chip. The use of a single capacitor plate will be further described below in conjunction with Figures 3 to 5 Example of a quantum chip on the board.
在本申请的一些实施例中,所述超导量子比特电路包括第一电容极板21,以及第一约瑟夫森结11和第二约瑟夫森结12,其中,所述第一约瑟夫森结11和所述第二约瑟夫森结12并联,且所述第一约瑟夫森结11的一端以及所述第二约瑟夫森结12的一端均与所述第一电容极板21连接,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端互连并且连接接地平面GND。在本实施例中,可以直接利用约瑟夫森结自身的底超导电极和/或顶超导电极进行连接,也可以利用额外形成的电连接结构进行连接,连接形式不限,只要上述的第一电容极板21、第一约瑟夫森结11、第二约瑟夫森结12连接形成的超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路即可。In some embodiments of the present application, the superconducting qubit circuit includes a first capacitor plate 21, and a first Josephson junction 11 and a second Josephson junction 12, wherein the first Josephson junction 11 and The second Josephson junction 12 is connected in parallel, and one end of the first Josephson junction 11 and one end of the second Josephson junction 12 are connected to the first capacitor plate 21 . The other end of the junction and the other end of the second Josephson junction are interconnected and connected to the ground plane GND. In this embodiment, the bottom superconducting electrode and/or the top superconducting electrode of the Josephson junction itself can be directly used for connection, or an additionally formed electrical connection structure can be used for connection. The connection form is not limited, as long as the above-mentioned first The superconducting qubit circuit formed by connecting the capacitor plate 21, the first Josephson junction 11, and the second Josephson junction 12 only needs to form a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region.
结合图3所示,为了使超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路,在一些示例中,所述超导量子比特电路包括第一电连接结构31,所述第一电连接结构31电和物理地接触连接所述第一约瑟夫森结11的另一端和所述第二约瑟夫森结12的另一端,其中,所述第一约瑟夫森结11的另一端直接连接接地平面GND,且所述第一电连接结构31与所述第一电容极板21非接触的交叉。本实施例中,所述第一约瑟夫森结11的一端和所述第二约瑟夫森结12的一端均电和物理地接触连接所述第一电容极板21。本文所描述的非接触的交叉,是指两电结构的延伸轨迹在衬底表面的投影存在交点,且交点上方的两电结构之间填充有某种电介质,以降低或阻隔两电结构之间的信号传输影响。As shown in FIG. 3 , in order to form a superconducting qubit circuit with a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region, in some examples, the superconducting qubit circuit includes a first circuit Connection structure 31, the first electrical connection structure 31 electrically and physically connects the other end of the first Josephson junction 11 and the other end of the second Josephson junction 12, wherein the first Josephson junction The other end of the junction 11 is directly connected to the ground plane GND, and the first electrical connection structure 31 intersects with the first capacitor plate 21 in a non-contact manner. In this embodiment, one end of the first Josephson junction 11 and one end of the second Josephson junction 12 are electrically and physically connected to the first capacitor plate 21 . The non-contact intersection described in this article means that the projection of the extended trajectory of the two electrical structures on the substrate surface has an intersection point, and the two electrical structures above the intersection point are filled with some dielectric to reduce or block the gap between the two electrical structures. influence on signal transmission.
结合图4所示,为了使超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路,在另一些示例中,所述超导量子比特电路包括第一电连接结构31和第二电连接结构32,其中,所述第一电连接结构31电和物理地接触连接所述第一约瑟夫森结11的一端和所述第二约瑟夫森结12的一端,保持所述第一约瑟夫森结11和所述第二约瑟夫森结12均与所述第一电容极板21实现电连接,所述第二电连接结构32电和物理地接触连接所述第一约瑟夫森结11的另一端和所述第二约瑟夫森结12的另一端保持所述第一约瑟夫森结11和所述第二约瑟夫森结12均实现连接至接地平面GND,且所述第二电连接结构32与所述第一电连接结构31非接触的交叉。具体而言,可以将第一约瑟夫森结11的一端直接电和物理地接触连接所述第一电容极板21,第二约瑟夫森结12的一端通过第一电连接结构31与所述第一电容极板21电和物理地接触连接,第一约瑟夫森结11的另一端直接接地,第二约瑟夫森结12的另一端通过第二电连接结构32与第二约瑟夫森结12的另一端共同连接接地平面GND。As shown in FIG. 4 , in order to form a superconducting qubit circuit with a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region, in other examples, the superconducting qubit circuit includes a first part of the circuit. The electrical connection structure 31 and the second electrical connection structure 32, wherein the first electrical connection structure 31 electrically and physically contacts and connects one end of the first Josephson junction 11 and one end of the second Josephson junction 12, Keep the first Josephson junction 11 and the second Josephson junction 12 to be electrically connected to the first capacitor plate 21 , and the second electrical connection structure 32 is electrically and physically connected to the first The other end of the Josephson junction 11 and the other end of the second Josephson junction 12 keep both the first Josephson junction 11 and the second Josephson junction 12 connected to the ground plane GND, and the second The electrical connection structure 32 intersects the first electrical connection structure 31 in a non-contact manner. Specifically, one end of the first Josephson junction 11 can be directly electrically and physically connected to the first capacitor plate 21 , and one end of the second Josephson junction 12 can be connected to the first capacitor plate 21 through the first electrical connection structure 31 . The capacitor plate 21 is electrically and physically connected, the other end of the first Josephson junction 11 is directly connected to the ground, and the other end of the second Josephson junction 12 is common with the other end of the second Josephson junction 12 through the second electrical connection structure 32 Connect the ground plane GND.
采用单个电容极板的量子芯片的实施方式不限于前文所述,结合图5所示,本申请在实施时,还可以采用第一电容极板21被接地平面GND包围,且第一电容极板21与接地 平面GND之间具有间隙,所述第一约瑟夫森结11和所述第二约瑟夫森结12分布在所述第一电容极板21两侧的间隙,且所述第一约瑟夫森结11和所述第二约瑟夫森结12的一端均电和物理地接触连接所述第一电容极板21,另一端均电和物理地接触连接所述接地平面GND。The implementation of the quantum chip using a single capacitor plate is not limited to the above. As shown in FIG. 5 , when the present application is implemented, the first capacitor plate 21 can also be surrounded by the ground plane GND, and the first capacitor plate 21 is surrounded by the ground plane GND. 21 and ground There is a gap between the plane GND, the first Josephson junction 11 and the second Josephson junction 12 are distributed in the gap on both sides of the first capacitor plate 21, and the first Josephson junction 11 and the One end of the second Josephson junction 12 is electrically and physically connected to the first capacitor plate 21 , and the other end is electrically and physically connected to the ground plane GND.
实施例二:采用两个电容极板的量子芯片的实施例 Embodiment 2: An embodiment of a quantum chip using two capacitor plates
图6至图12为本申请采用两个电容极板的量子芯片的实施结构示意图,Q1和Q2表示位于量子芯片上的两个量子比特,下面结合图6至图12进一步描述采用两个电容极板的量子芯片的实施例。Figures 6 to 12 are schematic diagrams of the implementation structure of a quantum chip using two capacitor plates in this application. Q 1 and Q 2 represent two qubits located on the quantum chip. The use of two qubits will be further described below in conjunction with Figures 6 to 12 An embodiment of a quantum chip with capacitor plates.
在本申请的另一些实施例中,所述超导量子比特电路包括第一电容极板21和第二电容极板22,以及第一约瑟夫森结11和第二约瑟夫森结12,其中,所述第一约瑟夫森结11和所述第二约瑟夫森结12并联,并将所述第一约瑟夫森结11的一端以及所述第二约瑟夫森结12的一端两者均与所述第一电容极板21连接,所述第一约瑟夫森结11的另一端和所述第二约瑟夫森结12的另一端两者均与所述第二电容极板22连接。在本实施例中,可以直接利用约瑟夫森结自身的底超导电极和/或顶超导电极进行连接,也可以利用额外形成的电连接结构进行连接,连接形式不限,只要上述的第一电容极板21和第二电容极板22,以及第一约瑟夫森结11和第二约瑟夫森结12连接形成的超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路即可。In other embodiments of the present application, the superconducting qubit circuit includes a first capacitor plate 21 and a second capacitor plate 22, and a first Josephson junction 11 and a second Josephson junction 12, wherein, The first Josephson junction 11 and the second Josephson junction 12 are connected in parallel, and both one end of the first Josephson junction 11 and one end of the second Josephson junction 12 are connected to the first capacitor. The plates 21 are connected, and the other end of the first Josephson junction 11 and the other end of the second Josephson junction 12 are both connected to the second capacitor plate 22 . In this embodiment, the bottom superconducting electrode and/or the top superconducting electrode of the Josephson junction itself can be directly used for connection, or an additionally formed electrical connection structure can be used for connection. The connection form is not limited, as long as the above-mentioned first The superconducting qubit circuit formed by connecting the capacitor plate 21 and the second capacitor plate 22 and the first Josephson junction 11 and the second Josephson junction 12 forms a first part of the circuit surrounding the first region and a circuit surrounding the second region. The second part of the circuit is enough.
在一些示例中,为了使超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路,采用所述第一电容极板21与所述第二电容极板22非接触的交叉的形式。本示例所描述的非接触的交叉,是指所述第一电容极板21与所述第二电容极板22的延伸轨迹在衬底表面的投影存在交点,且交点上方的所述第一电容极板21与所述第二电容极板22之间填充有某种电介质,以降低或阻隔两电结构之间的信号传输影响。具体实施时,可以将第一电容极板21和第二电容极板22分别形成在两个高度不同的表面,高度的差异可以利用形成于衬底表面的凹槽实现,例如,将第一电容极板21形成于低于该凹槽内,将第二电容极板22形成有衬底的表面且第二电容极板22横跨凹槽的两侧。具体实施时,也可以将第一电容极板21和第二电容极板22形成于一个表面,在轨迹的交叉处一者利用空气桥跨接另一者。In some examples, in order to form a superconducting qubit circuit with a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region, the first capacitor plate 21 and the second capacitor plate are used 22 non-contact crossover forms. The non-contact intersection described in this example means that the projections of the extension tracks of the first capacitor plate 21 and the second capacitor plate 22 on the substrate surface have an intersection point, and the first capacitor above the intersection point A certain dielectric is filled between the plate 21 and the second capacitor plate 22 to reduce or block the influence of signal transmission between the two electrical structures. During specific implementation, the first capacitor plate 21 and the second capacitor plate 22 can be formed on two surfaces with different heights. The difference in height can be realized by using grooves formed on the surface of the substrate. For example, the first capacitor plate 21 can be formed on two surfaces with different heights. The plate 21 is formed below the groove, and the second capacitor plate 22 is formed on the surface of the substrate and spans both sides of the groove. During specific implementation, the first capacitor plate 21 and the second capacitor plate 22 can also be formed on one surface, and one bridge is used to bridge the other at the intersection of the tracks.
在另一些示例中,为了使超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路,所述第二电容极板22包围所述第一电容极板21且所述第一区域和所述第二区域位于所述第二电容极板22和所述第一电容极板21之间,参照图6至图12所示。具体的,结合图6所示,第一电容极板21和第二电容极板22分隔,且所述第二电容极板22包围所述第一电容极板21,所述第一约瑟夫森结11的第一端与所述第一电容极板21连接,所述第一约瑟夫森结11的第二端与所述第二电容极板22连接,所述第二约瑟夫森结12的第一端与所述第一电容极板21连接,所述第二约瑟夫森结12的第二端与所述第二电容极板22连接,并且在第二电容极板22的附近布置有磁通调控信号线4和脉冲调控信号线5。In other examples, in order to form a superconducting qubit circuit with a first part of the circuit surrounding the first region and a second part of the circuit surrounding the second region, the second capacitance plate 22 surrounds the first capacitance plate. 21 and the first region and the second region are located between the second capacitor plate 22 and the first capacitor plate 21 , as shown in FIGS. 6 to 12 . Specifically, as shown in FIG. 6 , the first capacitor plate 21 and the second capacitor plate 22 are separated, and the second capacitor plate 22 surrounds the first capacitor plate 21 , and the first Josephson junction The first end of 11 is connected to the first capacitor plate 21, the second end of the first Josephson junction 11 is connected to the second capacitor plate 22, and the first end of the second Josephson junction 12 The second end of the second Josephson junction 12 is connected to the first capacitor plate 21 , the second end of the second Josephson junction 12 is connected to the second capacitor plate 22 , and a magnetic flux regulating device is arranged near the second capacitor plate 22 Signal line 4 and pulse control signal line 5.
为了便于本申请实施例的描述,用Q1和Q2表示图6中形成于衬底上的各量子比特,其中,第一量子比特Q1、第二量子比特Q2表示的每个量子比特均包括第一电容极板21和第二电容极板22,第一电容极板极21和第二电容极板22不直接连接接地平面GND,而 是与接地平面GND之间具有合适的间隙,间隙的物理尺寸根据量子芯片的性能参数的需要进行设计确定,需要说明的,第一电容极板21与接地平面GND之间形成电容C01,第二电容极板22与接地平面GND之间形成电容C02,第一电容极板21和第二电容极板22之间形成电容C12,可以根据量子芯片的性能参数计算确定电容C01、电容C02和电容C12的值进而计算确定出第一电容极板21和第二电容极板22的物理尺寸。In order to facilitate the description of the embodiments of this application, Q 1 and Q 2 are used to represent each qubit formed on the substrate in Figure 6 , where each qubit represented by the first qubit Q 1 and the second qubit Q 2 Both include a first capacitor plate 21 and a second capacitor plate 22. The first capacitor plate 21 and the second capacitor plate 22 are not directly connected to the ground plane GND, but There is a suitable gap between the first capacitor plate 21 and the ground plane GND. The physical size of the gap is designed and determined according to the performance parameters of the quantum chip. It should be noted that the capacitor C 01 is formed between the first capacitor plate 21 and the ground plane GND. A capacitance C 02 is formed between the two capacitor plates 22 and the ground plane GND, and a capacitance C 12 is formed between the first capacitor plate 21 and the second capacitor plate 22 . The capacitance C 01 and the capacitance C 01 can be determined based on the performance parameters of the quantum chip. The values of C 02 and capacitor C 12 are then calculated to determine the physical sizes of the first capacitor plate 21 and the second capacitor plate 22 .
在本申请的实施例中,第一约瑟夫森结11和第二约瑟夫森结12将第一电容极板21和包围第一电容极板21的第二电容极板22划分后形成两部分电路,结合图6所示,四者包围的上部分区域为第一区域,四者包围的下部分区域为第二区域,在利用电流I调控磁通量控制量子比特的频率时,带入磁通噪声的电流i的波动在量子比特电路区域产生一个变化磁场,该变化磁场分别在包围第一区域的电路和包围第二区域的电路形成方向相反的感应电流i1和i2,相反的感应电流可以形成一定程度上的抵消,这降低了噪声对量子比特频率发生偏离的影响,从而有助于将量子比特的频率控制在理想位置。因此,本申请的实施例有助于抑制磁通噪声对量子比特操作精度的影响,将量子比特的频率较精确的控制在对磁通不敏感的位置。In the embodiment of the present application, the first Josephson junction 11 and the second Josephson junction 12 divide the first capacitor plate 21 and the second capacitor plate 22 surrounding the first capacitor plate 21 to form two parts of the circuit. As shown in Figure 6, the upper area surrounded by the four is the first area, and the lower area surrounded by the four is the second area. When the current I is used to regulate the magnetic flux to control the frequency of the qubit, the current that brings in the magnetic flux noise The fluctuation of i generates a changing magnetic field in the qubit circuit area, which forms induced currents i 1 and i 2 in opposite directions in the circuit surrounding the first area and the circuit surrounding the second area respectively. The opposite induced currents can form a certain This degree of cancellation reduces the impact of noise on the deviation of the qubit frequency, thereby helping to control the frequency of the qubit at an ideal position. Therefore, the embodiments of the present application help to suppress the impact of magnetic flux noise on the operation accuracy of qubits, and control the frequency of qubits more accurately to a position that is insensitive to magnetic flux.
在本申请的一些实施例中,所述第一电容极板21和所述第二电容极板22至少之一可以为环形膜,参照图6至图12所示。具体实施时,所述第一电容极板21和所述第二电容极板22不限于上述的形状,只要所述第二电容极板22能够包围所述第一电容极板21即可,如图7和图8所示。在本申请的另一些实施例中,所述第一电容极板21还可以为圆形膜,如图6和图8所示。可以理解的是,环形膜、圆形膜是在衬底上形成的图案为环形或圆形的薄膜电结构,本申请实施例的量子芯片可以直接利用成熟的半导体工艺将超导材料经过沉积、图案化等获得,沉积的厚度可以是微米级或纳米级,超导材料为在等于或低于临界温度的温度时,例如在大约10-100毫开尔文(mK)或大约4mK时,展现超导特性的材料,例如铝、铌、钽或氮化钛等等,具体实施时不限于这几种,在等于或低于临界温度的温度时展现超导特性的材料均可用于形成所述薄膜电结构,例如,铝(Al),铌(Nb),氮化铌(NbN),氮化钛(TiN)和铌钛氮化物(NbTiN)中的一种或多种。In some embodiments of the present application, at least one of the first capacitor plate 21 and the second capacitor plate 22 may be an annular film, as shown in FIGS. 6 to 12 . During specific implementation, the first capacitor plate 21 and the second capacitor plate 22 are not limited to the above shapes, as long as the second capacitor plate 22 can surround the first capacitor plate 21, such as As shown in Figure 7 and Figure 8. In other embodiments of the present application, the first capacitor plate 21 may also be a circular film, as shown in FIGS. 6 and 8 . It can be understood that annular films and circular films are thin film electrical structures with an annular or circular pattern formed on a substrate. The quantum chip in the embodiment of the present application can directly use mature semiconductor processes to deposit superconducting materials. Obtained by patterning, etc., the deposited thickness can be micron or nanoscale, and the superconducting material exhibits superconducting at a temperature equal to or lower than the critical temperature, such as about 10-100 millikelvin (mK) or about 4mK. Materials with special properties, such as aluminum, niobium, tantalum or titanium nitride, etc., are not limited to these types in specific implementations. Materials that exhibit superconducting properties at a temperature equal to or lower than the critical temperature can be used to form the thin film electrode. Structure, for example, one or more of aluminum (Al), niobium (Nb), niobium nitride (NbN), titanium nitride (TiN) and niobium titanium nitride (NbTiN).
结合图6,并对比图7和图8所示,为了更加的利于量子比特间的耦合,或者是与量子芯片上的其他电元件形成耦合,在本申请的一些实施例中,所述第二电容极板22上形成有用于耦合的电容臂220,所示电容臂220可用与邻近位置的磁通调控信号线4和/或脉冲调控信号线5耦合,也可以用于促进实现Q1、Q2间的耦合,或者是用与读取谐振腔等电路结构的耦合。Combined with Figure 6 and compared with Figure 7 and Figure 8, in order to further facilitate the coupling between qubits, or to form coupling with other electrical components on the quantum chip, in some embodiments of the present application, the second A capacitor arm 220 for coupling is formed on the capacitor plate 22. The capacitor arm 220 can be coupled with the adjacent magnetic flux control signal line 4 and/or the pulse control signal line 5, and can also be used to promote the realization of Q 1 and Q Coupling between 2 , or coupling with a circuit structure such as a reading resonant cavity.
在采用两个电容极板的量子芯片的实施例中,所述第一电容极板21为环形膜时,磁通调控信号线4可以采用被所述第一电容极板21包围的形式设置,需要说明的是,所述第一电容极板21不限于环形膜,只要衬底上具有被所述第一电容极板21包围的空置区域,即可以直接利用成熟的半导体工艺形成信号传输线,将信号传输线的一部分形成于该空置区域,即被所述第一电容极板21包围,从而可作为所述磁通调控信号线4。在一实施例中,所述磁通调控信号线4包括至少1匝线圈,如图9所示,线圈的两端可以通过基于TSV的超导柱与衬底的另一表面的信号传输线电和物理地连接,从而利用信号传输线将磁通调控信号从衬底的另一表面传输至所述线圈实现量子比特的磁通调控。In the embodiment of the quantum chip using two capacitor plates, when the first capacitor plate 21 is an annular film, the magnetic flux control signal line 4 can be arranged in a form surrounded by the first capacitor plate 21, It should be noted that the first capacitor plate 21 is not limited to an annular film. As long as there is a vacant area surrounded by the first capacitor plate 21 on the substrate, a mature semiconductor process can be directly used to form a signal transmission line. A part of the signal transmission line is formed in the vacant area, that is, is surrounded by the first capacitor plate 21 , so that it can serve as the magnetic flux control signal line 4 . In one embodiment, the magnetic flux control signal line 4 includes at least 1 turn of coil. As shown in Figure 9, the two ends of the coil can be electrically connected to the signal transmission line on the other surface of the substrate through a TSV-based superconducting pillar. Physically connected, a signal transmission line is used to transmit the magnetic flux control signal from the other surface of the substrate to the coil to achieve magnetic flux control of the qubit.
示例性的,结合图10和图11所示,所述磁通调控信号线4可以包括第一线圈41和 第二线圈42,且所述第一线圈41和所述第二线圈42相间设置,所述第一线圈41和所述第二线圈42的电流方向相反,从而便于调整互感强度和磁场通量。所述第一线圈41和所述第二线圈42可以是两相对独立的传输线分别绕制形成(如图10所示),也可以是同一传输线沿着不同方向绕制形成(如图11所示)。For example, as shown in FIG. 10 and FIG. 11 , the magnetic flux control signal line 4 may include a first coil 41 and The second coil 42, and the first coil 41 and the second coil 42 are arranged alternately, and the current directions of the first coil 41 and the second coil 42 are opposite, so as to facilitate the adjustment of mutual inductance intensity and magnetic field flux. The first coil 41 and the second coil 42 may be formed by winding two relatively independent transmission lines respectively (as shown in Figure 10), or they may be formed by winding the same transmission line in different directions (as shown in Figure 11). ).
结合图12所示,在一些示例中,所述磁通调控信号线4包括串接且绕线方向相反的第一线圈41和第二线圈42,且所述第二线圈42的整体位于所述第一线圈41的整体内。可以理解的是,所述磁通调控信号线4包括串接的两个部分,一部分形成第一线圈41,另一部分形成第二线圈42。鉴于线圈整体绕线方向保持一致时存在中心磁场强、外围磁场弱的现象,该现象容易造成量子芯片上各量子比特的squid结构所处的磁场不均匀。本申请实施例将绕线方向相反的两个线圈串接布置,并且采用第二线圈42的整体位于第一线圈41的整体的内部的形式,相对可以削弱中心磁场、加强外围环形磁场,有助于实现一定程度的均匀,或者是在期望的区域实现可接受的均匀。As shown in FIG. 12 , in some examples, the magnetic flux control signal line 4 includes a first coil 41 and a second coil 42 connected in series and with opposite winding directions, and the entire second coil 42 is located on the within the entire first coil 41 . It can be understood that the magnetic flux control signal line 4 includes two parts connected in series, one part forming the first coil 41 and the other part forming the second coil 42 . In view of the phenomenon that the central magnetic field is strong and the peripheral magnetic field is weak when the overall winding direction of the coil is consistent, this phenomenon can easily cause the magnetic field of the squid structure of each qubit on the quantum chip to be uneven. In the embodiment of the present application, two coils with opposite winding directions are arranged in series, and the entirety of the second coil 42 is located inside the entirety of the first coil 41. This can relatively weaken the central magnetic field and strengthen the peripheral annular magnetic field, which is helpful. To achieve a certain degree of uniformity, or to achieve acceptable uniformity in a desired area.
可以理解的是,本申请实施例中,串接且绕线方向相反的第一线圈41和第二线圈42也可以是上述的薄膜电路,并且第一线圈41和第二线圈42可以通过光刻、电镀等如上介绍的工艺同步的制备形成。It can be understood that in the embodiment of the present application, the first coil 41 and the second coil 42 connected in series and with opposite winding directions can also be the above-mentioned thin film circuits, and the first coil 41 and the second coil 42 can be formed by photolithography. , electroplating and other processes introduced above are simultaneously prepared and formed.
结合图12所示,在所述衬底上形成的所述磁通调控信号线4包含转接点43,转接点43将信号线划分成两个部分,一部分形成第一线圈41,另一部分形成第二线圈42,第一线圈41中信号线的绕线方向和第二线圈42中信号线的绕线方向相反,并且第一线圈41和第二线圈42在转接点43处实现串接。As shown in FIG. 12 , the magnetic flux control signal line 4 formed on the substrate includes a transfer point 43 . The transfer point 43 divides the signal line into two parts, one part forming the first coil 41 and the other part The second coil 42 is formed, the winding direction of the signal line in the first coil 41 is opposite to the winding direction of the signal line in the second coil 42, and the first coil 41 and the second coil 42 are connected in series at the transfer point 43 .
在本申请的另一些实施例中,所述第一电容极板21和所述第二电容极板22沿着所述第一约瑟夫森结11和所述第二约瑟夫森结12的连线均呈对称分布,即所述第一电容极板21和所述第二电容极板22的薄膜图形是轴对称形式。在本申请的另一些实施例中,所述第一电容极板21的几何中心与所述第二电容极板22的几何中心在相同的位置。需要说明的是,具体实施时不限于此,所述第一电容极板21和所述第二电容极板22的几何形状、相对于所述第一约瑟夫森结11和所述第二约瑟夫森结12分布影响两个回路的感应电流大小,具体实施时,可以根据两个回路的感应电流的相对大小调整所述第一电容极板21和所述第二电容极板22的几何形状、及相对于所述第一约瑟夫森结11和所述第二约瑟夫森结12分布位置。In other embodiments of the present application, the first capacitor plate 21 and the second capacitor plate 22 are both connected along the first Josephson junction 11 and the second Josephson junction 12 . Symmetrically distributed, that is, the film patterns of the first capacitor plate 21 and the second capacitor plate 22 are axially symmetrical. In other embodiments of the present application, the geometric center of the first capacitor plate 21 and the geometric center of the second capacitor plate 22 are at the same position. It should be noted that the specific implementation is not limited thereto. The geometric shapes of the first capacitor plate 21 and the second capacitor plate 22 are relative to the first Josephson junction 11 and the second Josephson junction. The distribution of junction 12 affects the magnitude of the induced currents of the two loops. During specific implementation, the geometric shapes of the first capacitor plate 21 and the second capacitor plate 22 can be adjusted according to the relative magnitudes of the induced currents of the two loops, and The positions are distributed relative to the first Josephson junction 11 and the second Josephson junction 12 .
在本申请的另一些实施例中,所述第一电容极板21的对地电容C01和所述第二电容极板22的对地电容C02满足以下关系:100C01<C02或100C02<C01。根据超导量子比特电路中对应的等效比特电容为Cq≈C12+C01,或Cq≈C12+C02,式中,C12为所述第一电容极板21和所述第二电容极板22两者间的电容效应所形成的电容值。因此,可以固定一个电容极板的参数,灵活设计另一个电容极板。这在利用其中一个电容极板与其他电元件结构耦合需要考虑的,例如,利用其中一个电容极板与位于异面的读取谐振腔耦合时,需要根据耦合参数确定,因此,灵活设计程度十分重要。In other embodiments of the present application, the ground capacitance C 01 of the first capacitor plate 21 and the ground capacitance C 02 of the second capacitor plate 22 satisfy the following relationship: 100C 01 <C 02 or 100C 02 <C 01 . according to The corresponding equivalent bit capacitance in the superconducting qubit circuit is C q ≈ C 12 + C 01 , or C qC 12 + C 02 , where C 12 is the first capacitor plate 21 and the first capacitor plate 21 . The capacitance value formed by the capacitance effect between the two capacitor plates 22 . Therefore, the parameters of one capacitor plate can be fixed and the other capacitor plate can be flexibly designed. This needs to be considered when using one of the capacitor plates to couple with other electrical component structures. For example, when using one of the capacitor plates to couple with a reading resonant cavity located on an opposite surface, it needs to be determined based on the coupling parameters. Therefore, the degree of flexibility in design is very high. important.
需要说明的是,本申请实施例中使超导量子比特电路形成有包围第一区域的第一部分电路和包围第二区域的第二部分电路的结构形式还可不限于以上的描述。It should be noted that in the embodiment of the present application, the structural form of the superconducting qubit circuit formed with a first partial circuit surrounding the first region and a second partial circuit surrounding the second region may not be limited to the above description.
为了便于理解,现从另一角度对实施例二进行说明。应理解,在下面的描述中超导量子比特结构相当于上述实施例二中的量子芯片,第一电容板相当于上述实施例二中的第一 电容极板,第二电容板相当于上述实施例二中的第二电容极板。In order to facilitate understanding, Embodiment 2 will now be described from another perspective. It should be understood that in the following description, the superconducting qubit structure is equivalent to the quantum chip in the second embodiment above, and the first capacitor plate is equivalent to the first capacitor in the second embodiment above. The capacitor plate and the second capacitor plate are equivalent to the second capacitor plate in the second embodiment.
参照图6所示,本申请实施例提供的一种超导量子比特结构,包括第一电容板21和第一电容板22,以及第一约瑟夫森结11和第二约瑟夫森结12。其中,第一电容板21和第二电容板分隔2,且所述第一电容板22包围所述第一电容板21,所述第一约瑟夫森结11和所述第二约瑟夫森结12的一端均与所述第一电容板21连接,另一端均与所述第一电容板22连接。本申请实施例中的超导量子比特结构为形成于衬底上的薄膜电路结构,并可以利用半导体工艺制备形成,第一电容板21形成于衬底的第一区域,第一电容板22形成于衬底的第二区域,相应的,第二区域与第一区域分隔开,并且第二区域包围第一区域。Referring to FIG. 6 , an embodiment of the present application provides a superconducting qubit structure, including a first capacitor plate 21 and a first capacitor plate 22 , as well as a first Josephson junction 11 and a second Josephson junction 12 . Wherein, the first capacitor plate 21 and the second capacitor plate are separated by 2, and the first capacitor plate 22 surrounds the first capacitor plate 21, and the first Josephson junction 11 and the second Josephson junction 12 are One end is connected to the first capacitor plate 21 , and the other end is connected to the first capacitor plate 22 . The superconducting qubit structure in the embodiment of the present application is a thin film circuit structure formed on a substrate, and can be prepared and formed using a semiconductor process. The first capacitor plate 21 is formed in the first region of the substrate, and the first capacitor plate 22 is formed Correspondingly, the second area is separated from the first area, and the second area surrounds the first area.
参见图6所示,所述第一约瑟夫森结11的第一端与所述第一电容板21连接,所述第一约瑟夫森结11的第二端与所述第一电容板22连接,所述第二约瑟夫森结12的第一端与所述第一电容板21连接,所述第二约瑟夫森结12的第二端与所述第一电容板22连接,并且在第一电容板22的附近布置有磁通调控信号线4和脉冲调控信号线5。为了便于本申请实施例的描述,用Q1和Q2表示图6中形成于衬底上的各超导量子比特结构,其中,超导量子比特结构Q1、超导量子比特结构Q2表示的每个量子比特均包括第一电容板21和第二电容板1,第一电容板21和第二电容板1不直接连接接地平面(GND),而是与接地平面(GND)之间具有合适的间隙,间隙的物理尺寸根据量子芯片的性能参数的需要进行设计确定,需要说明的,第一电容板21与接地平面(GND)之间形成电容C01,第一电容板22与接地平面(GND)之间形成电容C02,第一电容板21和第二电容板12之间形成电容C12,可以根据量子芯片的性能参数计算确定电容C01、电容C02和电容C12的值进而计算确定出第一电容板21和第一电容板22的物理尺寸。并且可以根据Q1和Q2的耦合强调等参数需求确定电容臂220的物理尺寸以及Q1和Q2的间距。As shown in FIG. 6 , the first end of the first Josephson junction 11 is connected to the first capacitor plate 21 , and the second end of the first Josephson junction 11 is connected to the first capacitor plate 22 . The first end of the second Josephson junction 12 is connected to the first capacitor plate 21 , the second end of the second Josephson junction 12 is connected to the first capacitor plate 22 , and on the first capacitor plate A magnetic flux control signal line 4 and a pulse control signal line 5 are arranged near 22 . In order to facilitate the description of the embodiments of this application, Q 1 and Q 2 are used to represent each superconducting qubit structure formed on the substrate in Figure 6 , where the superconducting qubit structure Q 1 and the superconducting qubit structure Q 2 represent Each qubit of includes a first capacitor plate 21 and a second capacitor plate 1. The first capacitor plate 21 and the second capacitor plate 1 are not directly connected to the ground plane (GND), but have a The appropriate gap and the physical size of the gap are designed and determined according to the performance parameters of the quantum chip. It should be noted that the capacitance C 01 is formed between the first capacitor plate 21 and the ground plane (GND), and the capacitor C 01 is formed between the first capacitor plate 21 and the ground plane. (GND), and a capacitor C 12 is formed between the first capacitor plate 21 and the second capacitor plate 12. The values of capacitor C 01 , capacitor C 02 and capacitor C 12 can be calculated and determined according to the performance parameters of the quantum chip. Then, the physical sizes of the first capacitor plate 21 and the first capacitor plate 22 are calculated and determined. And the physical size of the capacitor arm 220 and the spacing between Q 1 and Q 2 can be determined according to parameter requirements such as the coupling emphasis of Q 1 and Q 2 .
针对相关技术中的量子比特构造极易受到磁通噪声的影响而导致量子比特频率偏离理想位置的问题,在本申请实施例提供的超导量子比特结构中,第一约瑟夫森结11和第二约瑟夫森结12的一端均与所述第一电容板21连接且另一端均与所述第一电容板22连接,从而将第一电容板21和包围第一电容板21的第一电容板22划分形成两个回路,结合图6所示,一个回路由第一约瑟夫森结11和第二约瑟夫森结12以及第一电容板21的上部分和第一电容板22的上部分形成,另一个回路由第一约瑟夫森结11和第二约瑟夫森结12以及第一电容板21的下部分和第一电容板22的下部分形成。参照图6中的磁通调控示意所示,利用电流I调控磁通量控制量子比特的频率时,带入磁通噪声的电流噪声i在量子比特电路的区域产生一方向的磁场,进而在两个回路形成方向相反的感应电流i1和i2,相反的感应电流可以形成一定程度上的抵消,这降低了噪声对量子比特频率发生偏离的影响,从而有助于将量子比特的频率控制在理想位置。因此,本申请实施例提供的超导量子比特结构有助于抑制磁通噪声对量子比特操作精度的影响,将量子比特的频率较精确的控制在对磁通不敏感的位置。In order to solve the problem that the qubit structure in the related art is extremely susceptible to the influence of magnetic flux noise, causing the qubit frequency to deviate from the ideal position, in the superconducting qubit structure provided in the embodiment of the present application, the first Josephson junction 11 and the second One end of the Josephson junction 12 is connected to the first capacitor plate 21 and the other end is connected to the first capacitor plate 22 , thereby connecting the first capacitor plate 21 and the first capacitor plate 22 surrounding the first capacitor plate 21 Two loops are formed by division. As shown in FIG. 6 , one loop is formed by the first Josephson junction 11 and the second Josephson junction 12 as well as the upper part of the first capacitor plate 21 and the upper part of the first capacitor plate 22 . The other loop is formed by the first Josephson junction 11 and the second Josephson junction 12 . The loop is formed by the first Josephson junction 11 and the second Josephson junction 12 and the lower parts of the first capacitive plate 21 and the first capacitive plate 22 . Referring to the magnetic flux control diagram in Figure 6, when the current I is used to regulate the magnetic flux to control the frequency of the qubit, the current noise i brought into the magnetic flux noise generates a magnetic field in one direction in the area of the qubit circuit, and then in the two loops Induced currents i 1 and i 2 are formed in opposite directions. The opposite induced currents can offset to a certain extent, which reduces the impact of noise on the deviation of the qubit frequency, thus helping to control the frequency of the qubit at the ideal position. . Therefore, the superconducting qubit structure provided by the embodiments of the present application helps to suppress the impact of magnetic flux noise on the operational accuracy of the qubit, and more accurately controls the frequency of the qubit at a position that is insensitive to magnetic flux.
在本申请的一些实施例中,所述第一电容板21和所述第一电容板22至少之一可以为环形膜,如图8所示。具体实施时,所述第一电容板21和所述第一电容板22不限于上述的形状,只要所述第一电容板22能够包围所述第一电容板21即可,如图7所示。在本申请的另一些实施例中,所述第一电容板21还可以为圆形膜,如图9、图10、图11和图12所示。可以理解的是,环形膜、圆形膜是在衬底上形成的图案为环形或圆形的薄膜电结构, 本申请实施例的超导量子比特结构可以直接利用成熟的半导体工艺将超导材料经过沉积、图案化等获得,沉积的厚度可以是微米级或纳米级,超导材料为在等于或低于临界温度的温度时,例如在大约10-100毫开尔文(mK)或大约4K时,展现超导特性的材料,例如铝、铌、钽或氮化钛等等,具体实施时不限于这几种,在等于或低于临界温度的温度时展现超导特性的材料均可用于形成所述薄膜电结构,例如,铝(Al),铌(Nb),氮化铌(NbN),氮化钛(TiN)和铌钛氮化物(NbTiN)中的一种或多种。In some embodiments of the present application, at least one of the first capacitor plate 21 and the first capacitor plate 22 may be an annular film, as shown in FIG. 8 . During specific implementation, the first capacitor plate 21 and the first capacitor plate 22 are not limited to the above shapes, as long as the first capacitor plate 22 can surround the first capacitor plate 21, as shown in Figure 7 . In other embodiments of the present application, the first capacitor plate 21 may also be a circular film, as shown in Figures 9, 10, 11 and 12. It can be understood that annular films and circular films are thin film electrical structures with an annular or circular pattern formed on a substrate. The superconducting qubit structure of the embodiment of the present application can be obtained by depositing, patterning, etc. the superconducting material directly using mature semiconductor processes. The thickness of the deposition can be micron or nanometer, and the superconducting material can be at or below the critical level. At a temperature of about 10-100 millikelvin (mK) or about 4K, materials that exhibit superconducting properties, such as aluminum, niobium, tantalum or titanium nitride, etc., the specific implementation is not limited to these types, Materials that exhibit superconducting properties at temperatures equal to or lower than the critical temperature can be used to form the thin film electrical structure, for example, aluminum (Al), niobium (Nb), niobium nitride (NbN), titanium nitride (TiN) ) and one or more of niobium titanium nitride (NbTiN).
结合图6,并对比图8所示,为了更加的利于量子比特间的耦合,或者是与量子芯片上的其他电元件形成耦合,在本申请的一些实施例中,所述第一电容板22上形成有用于耦合的电容臂220,所示电容臂220与邻近位置的磁通调控信号线4和/或脉冲调控信号线6耦合,也可以用于促进实现Q1、Q2间的耦合,或者是与读取谐振腔等电路结构的耦合。Combined with Figure 6 and compared with Figure 8, in order to further facilitate the coupling between qubits, or to form coupling with other electrical components on the quantum chip, in some embodiments of the present application, the first capacitor plate 22 A capacitor arm 220 for coupling is formed on the capacitor arm 220. The capacitor arm 220 is coupled to the adjacent magnetic flux control signal line 4 and/or the pulse control signal line 6, and can also be used to promote the coupling between Q 1 and Q 2 . Or coupling with circuit structures such as read resonant cavities.
在本申请的一些实施例中,所述超导量子比特结构还包括磁通调控信号线4,结合图9至图12所示,所述第一电容板21包围所述磁通调控信号线4,需要说明的是,可以直接利用成熟的半导体工艺形成信号传输线,信号传输线的一部分被所述第一电容板21包围,作为所述磁通调控信号线4。在一实施例中,所述磁通调控信号线4包括至少1匝线圈,如图9所示,线圈的两端可以通过基于TSV的超导柱与衬底的另一表面的信号传输线电和物理地连接,从而利用信号传输线将磁通调控信号从衬底的另一表面传输至所述线圈实现量子比特的磁通调控。示例性的,结合图10和图11所示,所述磁通调控信号线4可以包括第一线圈41和第二线圈42,且所述第一线圈41和所述第二线圈42相间设置,所述第一线圈41和所述第二线圈42的电流方向相反。所述第一线圈41和所述第二线圈42可以是两相对独立的传输线分别沿着不同方向绕制形成(如图10所示),也可以是同一传输线沿着不同方向绕制形成(如图11所示),从而便于调整互感强度和磁场通量。In some embodiments of the present application, the superconducting qubit structure also includes a magnetic flux control signal line 4. As shown in FIGS. 9 to 12, the first capacitor plate 21 surrounds the magnetic flux control signal line 4. , it should be noted that a mature semiconductor process can be directly used to form a signal transmission line, and a part of the signal transmission line is surrounded by the first capacitor plate 21 as the magnetic flux control signal line 4 . In one embodiment, the magnetic flux control signal line 4 includes at least 1 turn of coil. As shown in Figure 9, the two ends of the coil can be electrically connected to the signal transmission line on the other surface of the substrate through a TSV-based superconducting pillar. Physically connected, a signal transmission line is used to transmit the magnetic flux control signal from the other surface of the substrate to the coil to achieve magnetic flux control of the qubit. For example, as shown in FIG. 10 and FIG. 11 , the magnetic flux control signal line 4 may include a first coil 41 and a second coil 42 , and the first coil 41 and the second coil 42 are arranged alternately, The current directions of the first coil 41 and the second coil 42 are opposite. The first coil 41 and the second coil 42 may be formed by two relatively independent transmission lines wound along different directions (as shown in FIG. 10 ), or they may be formed by the same transmission line wound along different directions (as shown in FIG. 10 ). As shown in Figure 11), it is easy to adjust the mutual inductance intensity and magnetic field flux.
结合图12所示,在一些示例中,所述磁通调控信号线4包括串接且绕线方向相反的第一线圈41和第二线圈42,且所述第二线圈42的整体位于所述第一线圈41的整体内。可以理解的是,所述磁通调控信号线4包括串接的两个部分,一部分形成第一线圈41,另一部分形成第二线圈42。鉴于线圈整体绕线方向保持一致时存在中心磁场强、外围磁场弱的现象,容易造成量子芯片上各量子比特的squid结构所处的磁场不均匀,本申请实施例将绕线方向相反的两个部分线圈布置串接并且采用且第二线圈42的整体位于第一线圈41的整体的内部的形式,相对可以削弱中心磁场、加强外围环形磁场,有助于实现一定程度的均匀,或者是在期望的区域实现可接受的均匀。可以理解的是,本申请实施例中,串接且绕线方向相反的第一线圈41和第二线圈42也可以是上述的薄膜电路,并且第一线圈41和第二线圈42可以通过光刻、电镀等如上介绍的工艺同步的制备形成。结合图12所示,在所述衬底上形成的所述磁通调控信号线4包含转接点,转接点43将信号线划分成两个部分,一部分形成第一线圈41,另一部分形成第二线圈42,第一线圈41中信号线的绕线方向和第二线圈42中信号线的绕线方向相反,并且第一线圈41和第二线圈42在转接点43处实现串接。As shown in FIG. 12 , in some examples, the magnetic flux control signal line 4 includes a first coil 41 and a second coil 42 connected in series and with opposite winding directions, and the entire second coil 42 is located on the within the entire first coil 41 . It can be understood that the magnetic flux control signal line 4 includes two parts connected in series, one part forming the first coil 41 and the other part forming the second coil 42 . In view of the fact that when the overall winding direction of the coil is consistent, the central magnetic field is strong and the peripheral magnetic field is weak, which can easily cause the magnetic field of the squid structure of each qubit on the quantum chip to be uneven. In this embodiment, the two winding directions are opposite. Some coils are arranged in series and adopt the form of the entire second coil 42 being located inside the entire first coil 41, which can relatively weaken the central magnetic field and strengthen the peripheral annular magnetic field, helping to achieve a certain degree of uniformity, or when desired. area to achieve acceptable uniformity. It can be understood that in the embodiment of the present application, the first coil 41 and the second coil 42 connected in series and with opposite winding directions can also be the above-mentioned thin film circuits, and the first coil 41 and the second coil 42 can be formed by photolithography. , electroplating and other processes introduced above are simultaneously prepared and formed. As shown in FIG. 12 , the magnetic flux control signal line 4 formed on the substrate includes a transfer point. The transfer point 43 divides the signal line into two parts, one part forming the first coil 41 and the other part forming the first coil 41 . In the second coil 42 , the winding direction of the signal line in the first coil 41 is opposite to the winding direction of the signal line in the second coil 42 , and the first coil 41 and the second coil 42 are connected in series at the transfer point 43 .
在本申请的另一些实施例中,所述第一电容板21和所述第一电容板22沿着所述第一约瑟夫森结11和所述第二约瑟夫森结12的连线均呈对称分布,即所述第一电容板21和所述第一电容板22的薄膜图形是轴对称形式。在本申请的另一些实施例中,所述第一电容板21的几何中心与所述第一电容板22的几何中心在相同的位置。需要说明的是,具体实 施时不限于此,所述第一电容板21和所述第一电容板22的几何形状、相对于所述第一约瑟夫森结11和所述第二约瑟夫森结12分布影响两个回路的感应电流大小,具体实施时,可以根据两个回路的感应电流的相对大小调整所述第一电容板21和所述第一电容板22的几何形状、及相对于所述第一约瑟夫森结11和所述第二约瑟夫森结12分布位置。In other embodiments of the present application, the first capacitor plate 21 and the first capacitor plate 22 are symmetrical along the connection line of the first Josephson junction 11 and the second Josephson junction 12 The distribution, that is, the film patterns of the first capacitor plate 21 and the first capacitor plate 22 are in an axially symmetrical form. In other embodiments of the present application, the geometric center of the first capacitor plate 21 is at the same position as the geometric center of the first capacitor plate 22 . It should be noted that the specific The application is not limited to this. The geometry of the first capacitor plate 21 and the first capacitor plate 22 and the distribution relative to the first Josephson junction 11 and the second Josephson junction 12 affect the two loops. The size of the induced current. During specific implementation, the geometric shapes of the first capacitive plate 21 and the first capacitive plate 22 and their relative positions relative to the first Josephson junction 11 can be adjusted according to the relative sizes of the induced currents of the two loops. and the second Josephson junction 12 distributed positions.
在本申请的另一些实施例中,所述第一电容板21的对地电容C01和所述第一电容板22的对地电容C02满足以下关系:100C01≤C02,或100C022≤C01。根据量子比特电路中对应的等效比特电容为Cq≈C12+C01,或为Cq≈C12+C02。因此,可以固定一个电容板的参数,灵活设计另一个电容板。这在利用其中一个电容板与其他电元件结构耦合需要考虑的,例如,利用其中一个电容板与位于异面的读取谐振腔耦合时,需要根据耦合参数确定,因此,灵活设计程度十分重要。In other embodiments of the present application, the ground capacitance C 01 of the first capacitor plate 21 and the ground capacitance C 02 of the first capacitor plate 22 satisfy the following relationship: 100C 01C 02 , or 100C 022 ≤C 01 . according to The corresponding equivalent bit capacitance in the qubit circuit is C q ≈C 12 +C 01 , or C q ≈C 12 +C 02 . Therefore, the parameters of one capacitive plate can be fixed and another capacitive plate can be designed flexibly. This needs to be considered when using one of the capacitive plates to couple with other electrical component structures. For example, when using one of the capacitive plates to couple with a read resonant cavity located on a different surface, it needs to be determined based on the coupling parameters. Therefore, the degree of flexible design is very important.
读取谐振腔在量子芯片中的作用是读出量子比特的信息,例如,通过非破坏读取的方式读取量子比特的信息,在一些实施例中,读取谐振腔可以布置在电容臂220的邻近位置,与电容臂形成耦合。在本申请的另一些实施例中,量子比特电路形成于衬底的第一表面(例如,顶部表面),所述第一电容板21为环形膜,且在所述环形膜包围的区域形成有耦合电容,读取谐振腔形成于衬底的第二表面(例如,底部表面),读取谐振腔的一端通过电介质元件与所述耦合电容连接,另一端与读取信号线连接,所述电介质元件贯穿所述衬底的第一表面(例如,顶部表面)和第二表面(例如,底部表面),并与所述耦合电容及所述读取腔的一端实现电和物理地连接。所述电介质元件可以通过光刻、电镀等形成,并且进行相应地图形化。在一些实施例中,所述第一电容板21不限于环形膜,读取谐振腔的一端也可以直接通过电介质元件与所述第一电容板21形成耦合连接。The function of the read resonant cavity in the quantum chip is to read the information of the qubits, for example, by reading the information of the qubits in a non-destructive reading manner. In some embodiments, the read resonant cavity can be arranged on the capacitor arm 220 The adjacent position forms a coupling with the capacitive arm. In other embodiments of the present application, the qubit circuit is formed on the first surface (for example, the top surface) of the substrate, the first capacitor plate 21 is an annular film, and an area surrounded by the annular film is formed. Coupling capacitor, the read resonant cavity is formed on the second surface (for example, the bottom surface) of the substrate, one end of the read resonant cavity is connected to the coupling capacitor through a dielectric element, and the other end is connected to the read signal line, the dielectric The element penetrates the first surface (eg, top surface) and the second surface (eg, bottom surface) of the substrate and is electrically and physically connected to the coupling capacitor and one end of the read chamber. The dielectric elements may be formed by photolithography, electroplating, etc., and patterned accordingly. In some embodiments, the first capacitive plate 21 is not limited to an annular film, and one end of the reading resonant cavity can also be directly coupled to the first capacitive plate 21 through a dielectric element.
实施例三:采用四个电容极板的量子芯片的实施例 Embodiment 3: An embodiment of a quantum chip using four capacitor plates
图13为本申请采用四个电容极板的量子芯片的实施结构示意图,Q1和Q2表示位于量子芯片上的两个量子比特。Figure 13 is a schematic structural diagram of a quantum chip using four capacitor plates in this application. Q 1 and Q 2 represent two qubits located on the quantum chip.
结合图13所示,在本申请的一实施例中,所述超导量子比特电路包括第一约瑟夫森结11和第二约瑟夫森结12,第一电容极板21和第二电容极板22,以及第三电容极板23和第四电容极板24,其中,所述第一电容极板21和所述第二电容极板22分别独立的位于所述第一约瑟夫森结11的两端,所述第三极板23和所述第四极板24分别独立的位于所述第二约瑟夫森结12的两端,且所述第一电容极板21和所述第四电容极板24之间,以及所述第二电容极板22和所述第三电容极板23之间非接触的交叉电连接。可以理解的是,非接触的交叉电连接可以利用前文所描述的电连接结构形式形成。As shown in FIG. 13 , in an embodiment of the present application, the superconducting qubit circuit includes a first Josephson junction 11 and a second Josephson junction 12 , a first capacitor plate 21 and a second capacitor plate 22 , and a third capacitor plate 23 and a fourth capacitor plate 24, wherein the first capacitor plate 21 and the second capacitor plate 22 are independently located at both ends of the first Josephson junction 11 , the third plate 23 and the fourth plate 24 are independently located at both ends of the second Josephson junction 12 , and the first capacitor plate 21 and the fourth capacitor plate 24 non-contact cross-electrical connection between the second capacitor plate 22 and the third capacitor plate 23 . It can be understood that the non-contact cross electrical connection can be formed using the electrical connection structure described above.
上文结合图1至图13,详细描述了本申请的方法实施例,下面结合图14,详细描述本申请的装置实施例。应理解,方法实施例的描述与装置实施例的描述相互对应,因此,未详细描述的部分可以参见前面方法实施例。The method embodiment of the present application is described in detail above with reference to FIGS. 1 to 13 , and the device embodiment of the present application is described in detail below with reference to FIG. 14 . It should be understood that the description of the method embodiments corresponds to the description of the device embodiments. Therefore, the parts not described in detail can be referred to the previous method embodiments.
图14为本申请磁通调控信号线的一个实施例的结构示意图。Figure 14 is a schematic structural diagram of an embodiment of the magnetic flux control signal line of the present application.
结合图14所示,在本申请实施例提供的量子芯片中,所述磁通调控信号线4和所述超导量子比特电路可形成于同一表面,也可形成于不同的表面。在所述磁通调控信号线和所述超导量子比特电路形成于同一表面时,所述磁通调控信号线也可以位于所述超导量子比特电路的一侧。在所述磁通调控信号线和所述超导量子比特电路形成于不同的表面时,所述磁通调控信号线和所述超导量子比特电路可以各自独立的形成于同一衬底的顶部表 面和底部表面,也可以一者形成于一衬底的底部表面和另一者形成于另一衬底的顶部表面,并且一衬底的底部表面和另一衬底的顶部表面对置。在一些实施例中,所述磁通调控信号线4包括线圈。示例性的,所述线圈包括第一线圈41和第二线圈42,且所述第一线圈41和所述第二线圈42相间设置,所述第一线圈41和所述第二线圈42的电流方向相反。As shown in FIG. 14 , in the quantum chip provided by the embodiment of the present application, the magnetic flux control signal line 4 and the superconducting qubit circuit can be formed on the same surface or on different surfaces. When the magnetic flux control signal line and the superconducting qubit circuit are formed on the same surface, the magnetic flux control signal line may also be located on one side of the superconducting qubit circuit. When the magnetic flux control signal line and the superconducting qubit circuit are formed on different surfaces, the magnetic flux control signal line and the superconducting qubit circuit can be independently formed on the top surface of the same substrate. The surface and the bottom surface may also be formed on the bottom surface of one substrate and the other on the top surface of another substrate, and the bottom surface of one substrate faces the top surface of the other substrate. In some embodiments, the flux control signal line 4 includes a coil. Exemplarily, the coils include a first coil 41 and a second coil 42, and the first coil 41 and the second coil 42 are arranged alternately. The currents of the first coil 41 and the second coil 42 are In the opposite direction.
本申请的实施例还提供了一种量子计算机,所述量子计算机包括量子芯片,所述量子芯片上至少设置有本申请的实施例中所述的超导量子比特结构。Embodiments of the present application also provide a quantum computer. The quantum computer includes a quantum chip, and the quantum chip is provided with at least the superconducting qubit structure described in the embodiments of the present application.
这里需要指出的是:以上量子计算机中的量子芯片与上述结构类似,且具有同上述量子芯片实施例相同的有益效果,因此不做赘述。对于本申请量子计算机实施例中未披露的技术细节,本领域的技术人员请参照上述量子芯片实施例的描述而理解,为节约篇幅,这里不再赘述。It should be pointed out here that the quantum chip in the above quantum computer is similar to the above structure and has the same beneficial effects as the above quantum chip embodiment, so no further description is given. For technical details not disclosed in the embodiments of the quantum computer of this application, those skilled in the art should refer to the description of the above quantum chip embodiments to understand them. To save space, they will not be described again here.
本申请实施例提供的一种量子芯片的制造可能需要沉积一种或多种材料,例如超导体、电介质和/或金属。取决于所选择的材料,这些材料可以使用诸如化学气相沉积、物理气相沉积(例如,蒸发或溅射)的沉积工艺或外延技术以及其他沉积工艺来沉积。本申请实施例描述的量子芯片的制备工艺可能需要在制造过程期间从器件去除一种或多种材料。取决于要去除的材料,去除工艺可以包括例如湿蚀刻技术、干蚀刻技术或剥离(lift-off)工艺。可以使用已知的曝光(lithographic)技术(例如,光刻或电子束曝光)对形成本文所述的电路元件的材料进行图案化。The fabrication of a quantum chip provided by embodiments of the present application may require deposition of one or more materials, such as superconductors, dielectrics and/or metals. Depending on the materials selected, these materials may be deposited using deposition processes such as chemical vapor deposition, physical vapor deposition (eg, evaporation or sputtering), or epitaxial techniques, as well as other deposition processes. The fabrication process of the quantum chip described in the embodiments of this application may require the removal of one or more materials from the device during the manufacturing process. Depending on the material to be removed, the removal process may include, for example, wet etching techniques, dry etching techniques, or lift-off processes. Materials forming circuit elements described herein may be patterned using known lithographic techniques (eg, photolithography or electron beam exposure).
以上依据图式所示的实施例详细说明了本申请的构造、特征及作用效果,以上所述仅为本申请的较佳实施例,但本申请不以图面所示限定实施范围,凡是依照本申请的构想所作的改变,或修改为等同变化的等效实施例,仍未超出说明书与图示所涵盖的精神时,均应在本申请的保护范围内。The structure, features and effects of the present application have been described in detail based on the embodiments shown in the drawings. The above descriptions are only preferred embodiments of the present application. However, the scope of implementation of the present application is not limited by the drawings. Any changes made to the concept of this application, or modifications to equivalent embodiments with equivalent changes, shall be within the protection scope of this application as long as they do not exceed the spirit covered by the description and drawings.
应理解,本申请中术语“系统”和“网络”可以被可互换使用。另外,本申请使用的术语仅用于对本申请的具体实施例进行解释,而非旨在限定本申请。本申请的说明书和权利要求书及所述附图中的术语“第一”、“第二”、“第三”和“第四”等是用于区别不同对象,而不是用于描述特定顺序。此外,术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。It should be understood that the terms "system" and "network" may be used interchangeably in this application. In addition, the terms used in this application are only used to explain specific embodiments of the application and are not intended to limit the application. The terms “first”, “second”, “third” and “fourth” in the description, claims and drawings of this application are used to distinguish different objects, rather than to describe a specific sequence. . Furthermore, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusion.
在本申请实施例中,“与A相应的B”表示B与A相关联,根据A可以确定B。但还应理解,根据A确定B并不意味着仅仅根据A确定B,还可以根据A和/或其它信息确定B。In the embodiment of this application, "B corresponding to A" means that B is associated with A, and B can be determined based on A. However, it should also be understood that determining B based on A does not mean determining B only based on A. B can also be determined based on A and/or other information.
在本申请实施例中,术语“对应”可表示两者之间具有直接对应或间接对应的关系,也可以表示两者之间具有关联关系,也可以是指示与被指示、配置与被配置等关系。In the embodiments of this application, the term "correspondence" can mean that there is a direct correspondence or indirect correspondence between the two, or it can also mean that there is an association between the two, or it can also mean indicating and being instructed, configuring and being configured, etc. relation.
本申请实施例中术语“和/或”,仅仅是一种描述关联对象的关联关系,表示可以存在三种关系,例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B这三种情况。另外,本文中字符“/”,一般表示前后关联对象是一种“或”的关系。The term "and/or" in the embodiment of this application is only an association relationship describing associated objects, indicating that there can be three relationships, for example, A and/or B, which can mean: A exists alone, and A and B exist simultaneously. , there are three situations of B alone. In addition, the character "/" in this article generally indicates that the related objects are an "or" relationship.
在本申请所提供的几个实施例中,应该理解到,所揭露的系统、装置和方法,可以通过其它的方式实现。例如,以上所描述的装置实施例仅仅是示意性的,例如,所述单元的划分,仅仅为一种逻辑功能划分,实际实现时可以有另外的划分方式,例如多个单元或组件可以结合或者可以集成到另一个系统,或一些特征可以忽略,或不执行。另一点,所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口,装置或单元的间 接耦合或通信连接,可以是电性,机械或其它的形式。In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only illustrative. For example, the division of the units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components may be combined or can be integrated into another system, or some features can be ignored, or not implemented. In another point, the coupling or direct coupling or communication connection between each other shown or discussed may be through some interfaces, devices or units. Continuous coupling or communication connection, which may be electrical, mechanical or other forms.
所述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物理单元,即可以位于一个地方,或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
另外,在本申请各个实施例中的各功能单元可以集成在一个处理单元中,也可以是各个单元单独物理存在,也可以两个或两个以上单元集成在一个单元中。In addition, each functional unit in each embodiment of the present application can be integrated into one processing unit, each unit can exist physically alone, or two or more units can be integrated into one unit.
在上述实施例中,可以全部或部分地通过软件、硬件、固件或者其任意组合来实现。当使用软件实现时,可以全部或部分地以计算机程序产品的形式实现。所述计算机程序产品包括一个或多个计算机指令。在计算机上加载和执行所述计算机程序指令时,全部或部分地产生按照本申请实施例所述的流程或功能。所述计算机可以是通用计算机、专用计算机、计算机网络、或者其他可编程装置。所述计算机指令可以存储在计算机可读存储介质中,或者从一个计算机可读存储介质向另一个计算机可读存储介质传输,例如,所述计算机指令可以从一个网站站点、计算机、服务器或数据中心通过有线(例如同轴电缆、光纤、数字用户线(digital subscriber line,DSL))或无线(例如红外、无线、微波等)方式向另一个网站站点、计算机、服务器或数据中心进行传输。所述计算机可读存储介质可以是计算机能够读取的任何可用介质或者是包含一个或多个可用介质集成的服务器、数据中心等数据存储设备。所述可用介质可以是磁性介质,(例如,软盘、硬盘、磁带)、光介质(例如,数字通用光盘(digital video disc,DVD))或者半导体介质(例如,固态硬盘(solid state disk,SSD))等。In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, it may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the processes or functions described in the embodiments of the present application are generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions may be stored in or transmitted from one computer-readable storage medium to another, e.g., the computer instructions may be transferred from a website, computer, server, or data center Transmission to another website, computer, server or data center through wired (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (such as infrared, wireless, microwave, etc.) means. The computer-readable storage medium may be any available medium that can be read by a computer or a data storage device such as a server or data center integrated with one or more available media. The available media may be magnetic media (e.g., floppy disks, hard disks, magnetic tapes), optical media (e.g., digital video discs (DVD)) or semiconductor media (e.g., solid state disks (SSD) )wait.
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以所述权利要求的保护范围为准。 The above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application. should be covered by the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (21)

  1. 一种量子芯片,其特征在于,包括:A quantum chip is characterized by including:
    超导量子比特电路,所述超导量子比特电路形成包围第一区域的第一部分电路和包围第二区域的第二部分电路;以及,A superconducting qubit circuit forming a first portion of the circuit surrounding the first region and a second portion of the circuit surrounding the second region; and,
    与所述超导量子比特电路耦合的磁通调控信号线,磁通调控信号线施加的调控信号在所述第一部分电路和所述第二部分电路获得方向相反的感应电流。A magnetic flux control signal line is coupled to the superconducting qubit circuit. The control signal applied by the magnetic flux control signal line obtains induced currents in opposite directions in the first part of the circuit and the second part of the circuit.
  2. 根据权利要求1所述的量子芯片,其特征在于,所述超导量子比特电路包括:The quantum chip according to claim 1, characterized in that the superconducting qubit circuit includes:
    电容极板;及capacitor plates; and
    第一约瑟夫森结和第二约瑟夫森结,所述第一约瑟夫森结和所述第二约瑟夫森结并联,且所述第一约瑟夫森结的一端和所述第二约瑟夫森结的一端均与所述电容极板连接,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端互连并且接地。The first Josephson knot and the second Josephson knot, the first Josephson knot and the second Josephson knot are connected in parallel, and one end of the first Josephson knot and one end of the second Josephson knot are both Connected to the capacitor plate, the other end of the first Josephson junction and the other end of the second Josephson junction are interconnected and grounded.
  3. 根据权利要求2所述的量子芯片,其特征在于,所述超导量子比特电路包括第一电连接结构,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端通过所述第一电连接结构互连,且所述第一电连接结构与所述电容极板非接触的交叉。The quantum chip according to claim 2, wherein the superconducting qubit circuit includes a first electrical connection structure, and the other end of the first Josephson junction and the other end of the second Josephson junction pass through The first electrical connection structures are interconnected, and the first electrical connection structures intersect with the capacitor plate in a non-contact manner.
  4. 根据权利要求2或3所述的量子芯片,其特征在于,所述超导量子比特电路包括第一电连接结构和第二电连接结构,所述第一约瑟夫森结的一端和所述第二约瑟夫森结的一端通过所述第一电连接结构连接,所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端通过所述第二电连接结构连接,且所述第二电连接结构与所述第一电连接结构非接触的交叉。The quantum chip according to claim 2 or 3, characterized in that the superconducting qubit circuit includes a first electrical connection structure and a second electrical connection structure, one end of the first Josephson junction and the second One end of the Josephson junction is connected through the first electrical connection structure, the other end of the first Josephson junction and the other end of the second Josephson junction are connected through the second electrical connection structure, and the third The two electrical connection structures intersect with the first electrical connection structure in a non-contact manner.
  5. 根据权利要求1所述的量子芯片,其特征在于,所述超导量子比特电路包括:The quantum chip according to claim 1, characterized in that the superconducting qubit circuit includes:
    第一电容极板和第二电容极板;及first capacitor plate and second capacitor plate; and
    第一约瑟夫森结和第二约瑟夫森结,所述第一约瑟夫森结的一端和所述第二约瑟夫森结的一端均与所述第一电容极板连接,且所述第一约瑟夫森结的另一端和所述第二约瑟夫森结的另一端均与所述第二电容极板连接。A first Josephson junction and a second Josephson junction. One end of the first Josephson junction and one end of the second Josephson junction are both connected to the first capacitor plate, and the first Josephson junction The other end of the second Josephson junction and the other end of the second Josephson junction are both connected to the second capacitor plate.
  6. 根据权利要求5所述的量子芯片,其特征在于,所述第一电容极板和所述第二电容极板分隔设置。The quantum chip according to claim 5, characterized in that the first capacitor plate and the second capacitor plate are arranged separately.
  7. 根据权利要求5或6所述的量子芯片,其特征在于,所述第一电容极板与所述第二电容极板非接触的交叉。The quantum chip according to claim 5 or 6, characterized in that the first capacitor plate and the second capacitor plate intersect in a non-contact manner.
  8. 根据权利要求5至7中任一项所述的量子芯片,其特征在于,所述第二电容极板包围所述第一电容极板,且所述第一区域和所述第二区域位于所述第二电容极板和所述第一电容极板之间。The quantum chip according to any one of claims 5 to 7, characterized in that the second capacitor plate surrounds the first capacitor plate, and the first region and the second region are located at between the second capacitor plate and the first capacitor plate.
  9. 根据权利要求5至8中任一项所述的量子芯片,其特征在于,所述第一电容极板和所述第二电容极板沿着所述第一约瑟夫森结和所述第二约瑟夫森结的连线均呈对称分布。The quantum chip according to any one of claims 5 to 8, characterized in that the first capacitor plate and the second capacitor plate are formed along the first Josephson junction and the second Josephson junction. The connection lines of the forest knot are all symmetrically distributed.
  10. 根据权利要求5至9中任一项所述的量子芯片,其特征在于,所述第一电容极板的几何中心与所述第二电容极板的几何中心重叠。The quantum chip according to any one of claims 5 to 9, characterized in that the geometric center of the first capacitor plate overlaps the geometric center of the second capacitor plate.
  11. 根据权利要求5至10中任一项所述的量子芯片,其特征在于,所述第一电容极板的对地电容C01和所述第二电容极板的对地电容C02满足以下关系:100C01≤C02,或100C02≤C01The quantum chip according to any one of claims 5 to 10, characterized in that the ground capacitance C 01 of the first capacitor plate and the ground capacitance C 02 of the second capacitor plate satisfy the following relationship : 100C 01 ≤ C 02 , or 100C 02C 01 .
  12. 根据权利要求5至11中任一项所述的量子芯片,其特征在于,所述第二电容极板 为环形膜。The quantum chip according to any one of claims 5 to 11, characterized in that the second capacitor plate It is an annular membrane.
  13. 根据权利要求5至12中任一项所述的量子芯片,其特征在于,所述第二电容极板上形成有用于耦合的电容臂。The quantum chip according to any one of claims 5 to 12, characterized in that a capacitor arm for coupling is formed on the second capacitor plate.
  14. 根据权利要求5至13中任一项所述的量子芯片,其特征在于,所述第一电容极板为环形膜或圆形膜。The quantum chip according to any one of claims 5 to 13, characterized in that the first capacitor plate is an annular film or a circular film.
  15. 根据权利要求5至14中任一项所述的量子芯片,其特征在于,所述第一电容极板包围所述磁通调控信号线。The quantum chip according to any one of claims 5 to 14, characterized in that the first capacitor plate surrounds the magnetic flux control signal line.
  16. 根据权利要求1所述的量子芯片,其特征在于,所述超导量子比特电路包括:The quantum chip according to claim 1, characterized in that the superconducting qubit circuit includes:
    第一约瑟夫森结和第二约瑟夫森结;First Josephson Knot and Second Josephson Knot;
    第一电容极板和第二电容极板,所述第一电容极板和所述第二电容极板分别独立的位于所述第一约瑟夫森结的两端;以及,A first capacitor plate and a second capacitor plate, the first capacitor plate and the second capacitor plate are independently located at both ends of the first Josephson junction; and,
    第三电容极板和第四电容极板,所述第三电容极板和所述第四电容极板分别独立的位于所述第二约瑟夫森结的两端;A third capacitor plate and a fourth capacitor plate, the third capacitor plate and the fourth capacitor plate are independently located at both ends of the second Josephson junction;
    且所述第一电容极板和所述第四电容极板之间,以及所述第二电容极板和所述第三电容极板之间非接触的交叉电连接。And there is a non-contact cross electrical connection between the first capacitor plate and the fourth capacitor plate, and between the second capacitor plate and the third capacitor plate.
  17. 根据权利要求1至16中任一项所述的量子芯片,其特征在于,所述磁通调控信号线和所述超导量子比特电路形成于同一表面,且所述磁通调控信号线位于所述超导量子比特电路的一侧。The quantum chip according to any one of claims 1 to 16, characterized in that the magnetic flux control signal line and the superconducting qubit circuit are formed on the same surface, and the magnetic flux control signal line is located on the same surface. One side of the superconducting qubit circuit.
  18. 根据权利要求1至17中任一项所述的量子芯片,其特征在于,所述磁通调控信号线和所述超导量子比特电路形成于不同的表面。The quantum chip according to any one of claims 1 to 17, characterized in that the magnetic flux control signal line and the superconducting qubit circuit are formed on different surfaces.
  19. 根据权利要求1至18中任一项所述的量子芯片,其特征在于,所述磁通调控信号线包括线圈。The quantum chip according to any one of claims 1 to 18, characterized in that the magnetic flux control signal line includes a coil.
  20. 根据权利要求1至19中任一项所述的量子芯片,其特征在于,所述线圈包括第一线圈和第二线圈,且所述第一线圈和所述第二线圈相间设置,所述第一线圈和所述第二线圈的电流方向相反。The quantum chip according to any one of claims 1 to 19, wherein the coil includes a first coil and a second coil, and the first coil and the second coil are arranged alternately, and the third coil The current directions of one coil and the second coil are opposite.
  21. 一种量子计算机,其特征在于,所述量子计算机设置有权利要求1-20任一项所述的量子芯片。 A quantum computer, characterized in that the quantum computer is equipped with the quantum chip according to any one of claims 1-20.
PCT/CN2023/108084 2022-08-31 2023-07-19 Quantum chip and quantum computer WO2024045930A1 (en)

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CN202211061364.1A CN117669746A (en) 2022-08-31 2022-08-31 Superconducting qubit structure and quantum computer
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