WO2024036741A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2024036741A1
WO2024036741A1 PCT/CN2022/126248 CN2022126248W WO2024036741A1 WO 2024036741 A1 WO2024036741 A1 WO 2024036741A1 CN 2022126248 W CN2022126248 W CN 2022126248W WO 2024036741 A1 WO2024036741 A1 WO 2024036741A1
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Prior art keywords
light
charge generation
emitting part
emitting
layer
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English (en)
French (fr)
Inventor
颜志敏
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Kunshan Govisionox Optoelectronics Co Ltd
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Kunshan Govisionox Optoelectronics Co Ltd
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Publication of WO2024036741A1 publication Critical patent/WO2024036741A1/zh
Priority to US19/008,661 priority Critical patent/US20250143070A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present application belongs to the technical field of electronic products, and particularly relates to a display panel and a display device.
  • Display panels are an indispensable interpersonal communication interface in these display devices.
  • Display panels such as OLED (Organic Light Emitting Diode, organic light emitting diode) have the advantages of self-illumination, energy saving, consumption reduction, bendability, and good flexibility.
  • OLED Organic Light Emitting Diode, organic light emitting diode
  • the display panel that realizes display does not require a backlight and has a fast response speed. With the characteristics of good display effect, it has attracted the attention of users and is widely used in terminal products such as smartphones and tablet computers.
  • the organic light-emitting devices of OLED display panels can be divided into single-layer structures and laminated structures. Compared with single-layer structures, laminated structures have higher brightness and lifespan, so they have higher potential in televisions, vehicle displays and other fields. application potential. However, the organic light-emitting device with a stacked structure in the related art easily causes color mixing in the display panel.
  • Embodiments of the present application provide a display panel and a display device.
  • the thickness of the first charge generation part greater than the thickness of the second charge generation part, the activation of the second light-emitting part corresponding to the second charge generation part is relatively increased.
  • the difference between the turn-on voltage of the second light-emitting part and the driving voltage of the first light-emitting part is reduced, thereby avoiding the color mixing problem in which the second light-emitting part is also lighted when the first light-emitting part is lighted.
  • embodiments of the present application provide a display panel, including: at least two luminescent layers stacked along the thickness direction of the display panel, with a charge generation layer disposed between two adjacent luminescent layers.
  • the charge generation layer includes a first charge generation part and a second charge generation part; along a thickness direction perpendicular to the display panel, the light emitting layer includes a first light emitting part and a second light emitting part that are spaced apart along the thickness direction.
  • the orthographic projection of the first charge generating part on the luminescent layer covers the first luminescent part
  • the orthographic projection of the second charge generating part on the luminescent layer covers the In the second light-emitting part, the thickness of the first charge generation part is greater than the thickness of the second charge generation part.
  • the first charge generation part and the second charge generation part of the charge generation layer both include P-type charge generation units stacked along the thickness direction of the display panel. layer and an N-type charge generation layer; at least the thickness of the P-type charge generation layer of the first charge generation part is greater than the thickness of the P-type charge generation layer of the second charge generation part. To relatively increase the turn-on voltage of the second light-emitting part.
  • the thickness of the P-type charge generation layer of the first charge generation part is 3 nm to 20 nm; and/or the thickness of the P-type charge generation layer of the second charge generation part
  • the thickness of the charge generation layer is 1 nm to 3 nm.
  • the display panel further includes an organic layer, the organic layer is provided between the P-type charge generation layer and the N-type charge generation layer; along the display panel In the thickness direction of the display panel, the orthographic projection of the organic layer on the charge generation layer covers the orthographic projection of the first light emitting part on the charge generation layer; and/or, along the thickness direction of the display panel, the orthographic projection of the organic layer on the charge generation layer An orthographic projection of the organic layer on the charge generating layer covers an orthographic projection of the second light emitting part on the charge generating layer. to reduce the driving voltage of the first light-emitting part and/or the second light-emitting part.
  • the material of the organic layer is the same as the material of one of the P-type charge generation layer and the N-type charge generation layer. to reduce production costs.
  • the thickness of the organic layer is less than or equal to the thickness of the P-type charge generation layer and the N-type charge generation layer; preferably , the thickness of the organic layer is 1 nm to 2 nm. To ensure the display panel thickness requirements.
  • the material of the organic layer includes at least one of a phenyl-containing compound, a carbazole-containing compound, a triazine-containing compound, and a phenanthroline-containing compound. to reduce the driving voltage of the first light-emitting part and/or the second light-emitting part.
  • the light-emitting layer further includes a third light-emitting part, the third light-emitting part is arranged adjacent to the first light-emitting part, and the charge generation layer further includes a third charge Generating part, along the thickness direction of the display panel, the orthographic projection of the third charge generating part on the light-emitting layer covers the third light-emitting part, and the thickness of the first charge generating part is greater than that of the third The thickness of the charge generation part; preferably, the thickness of the third charge generation part is equal to the thickness of the second charge generation part. This is to prevent the first light-emitting part from being lit at the same time as the third light-emitting part from being lit.
  • the first light-emitting part, the second light-emitting part and the third light-emitting part are respectively one of a red light-emitting part, a green light-emitting part and a blue light-emitting part.
  • the first light-emitting part is a blue light-emitting part
  • the second light-emitting part and the third light-emitting part are respectively one of a red light-emitting part and a green light-emitting part. This is to prevent the red light-emitting part and the green light-emitting part from being lighted at the same time as the blue light-emitting part is lit.
  • the present application provides a display device, including the display panel in any of the above embodiments.
  • the display panel provided by the embodiment of the present application includes a light-emitting layer and a charge generation layer.
  • the light-emitting layer includes a first light-emitting part and a second light-emitting part that are spaced apart.
  • the first light-emitting part and the second light-emitting part share a charge generation layer.
  • the orthographic projection of the first charge generation part on the light-emitting layer covers the first light-emitting part. That is, the first charge generation part is used to generate electrons in the first light-emitting part. and holes.
  • the orthographic projection of the second charge generation part on the light-emitting layer covers the second light-emitting part, that is, the second charge generation part is used to correspondingly generate electrons and holes in the second light-emitting part.
  • the difference between the turn-on voltage and the driving voltage of the first light-emitting part prevents current crosstalk between the first light-emitting part and the second light-emitting part, and prevents the second light-emitting part from being lighted at the same time when the first light-emitting part is lit. color mixing problem.
  • Figure 1 is a film structure diagram of a display panel provided by an embodiment of the present application.
  • Figure 2 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 3 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 4 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 5 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 6 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 7 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 8 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • Figure 9 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • FIG. 10 is a film structure diagram of a display panel provided by another embodiment of the present application.
  • OLED devices use a charge generation layer to connect two light-emitting units, and the charge generation layer often has a high mobility, which easily causes carriers to migrate to adjacent pixels through the charge generation layer, resulting in "color mixing" on the screen. ".
  • Each light-emitting unit has a driving voltage and a turn-on voltage.
  • the drive voltage can be understood as the voltage when the light-emitting unit is working normally, and the turn-on voltage is the voltage when the brightness of the light-emitting unit reaches 1 nit.
  • embodiments of the present application provide a display panel and a display device, by making the thickness of the first charge generation part greater than the thickness of the second charge generation part, that is, by thinning the thickness of the second charge generation part and/or Or increase the thickness of the first charge generating part so that the turn-on voltage of the second light-emitting part is relatively increased, thereby reducing the difference between the turn-on voltage of the second light-emitting part and the driving voltage of the first light-emitting part to avoid
  • There is a color mixing problem in which the second light-emitting part is also lighted when the first light-emitting part is lighted.
  • the embodiments of the present application provide a display panel and a display device. Each embodiment of the display panel and the display device will be described in detail below with reference to FIGS. 1 to 10 .
  • a display panel provided by an embodiment of the present application includes: at least two luminescent layers 1 stacked along the thickness direction of the display panel, with a charge generation device between two adjacent luminescent layers 1 .
  • Layer 2 the charge generation layer 2 includes a first charge generation part 21 and a second charge generation part 22; along the thickness direction perpendicular to the display panel, the light emitting layer 1 includes a first light emitting part 11 and a second light emitting part 12 arranged at intervals.
  • the orthographic projection of the first charge generation part 21 on the light-emitting layer 1 covers the first light-emitting part 11
  • the orthographic projection of the second charge generation part 22 on the light-emitting layer 1 covers the second light-emitting part 12
  • the thickness of the first charge generation part 21 is greater than the thickness of the second charge generation part 22 .
  • the display panel provided by the embodiment of the present application includes a light-emitting layer 1 and a charge generation layer 2.
  • the light-emitting layer 1 includes a first light-emitting part 11 and a second light-emitting part 12 arranged at intervals.
  • the first light-emitting part 11 and the second light-emitting part 12 share a layer of charge generation layer 2.
  • the orthographic projection of the first charge generation part 21 on the light-emitting layer 1 covers the first light-emitting part 11, that is, the first charge generation part 21 is used to correspond to The electrons and holes of the first light-emitting part 11 are generated, and the orthographic projection of the second charge generation part 22 on the light-emitting layer 1 covers the second light-emitting part 1 , that is, the second charge generation part 22 is used to generate the second light-emitting part 12 correspondingly. Electrons and holes.
  • the turn-on voltage of the second light-emitting part 12 corresponding to the second charge generation part 22 is increased, thereby reducing the second charge generation part 22.
  • the difference between the turn-on voltage of the second light-emitting part 12 and the driving voltage of the first light-emitting part 11 prevents current crosstalk between the first light-emitting part 11 and the second light-emitting part 12 and prevents the first light-emitting part 11 from lighting up.
  • the second light-emitting part 12 is lit together, there is a color mixing problem.
  • the turn-on voltage of the second light-emitting part 12 can be relatively increased by simultaneously thinning the thickness of the second charge generation part 22 and increasing the thickness of the first charge generation part 21 .
  • the display panel includes two luminescent layers 1, namely a first luminescent layer F1 and a second luminescent layer F2.
  • the display panel includes a stacked cathode 3, an electron injection layer 6, a first electron transport layer Layer D1, first light emitting layer F1, first hole transport layer K1, charge generation layer 2, second electron transport layer D2, second light emitting layer F2, second hole transport layer K2, hole injection layer 7 and anode 4.
  • FIG. 1 and FIG. 3 to FIG. 10 only schematically illustrate part of the film layer structure of the display panel.
  • the light-emitting principle of the OLED display panel is that the light-emitting layer 1 emits light through the injection and recombination of carriers at the anode 4 and the cathode 3, driven by an external electric field.
  • the carriers include electrons and holes. Specifically, under the action of the driving voltage, electrons and holes as carriers are injected from the cathode 3 and the anode 4 to the electron injection layer 6 and the hole injection layer 7 respectively, and the electrons and holes pass through the electron transport layer and the hole injection layer respectively.
  • the hole transport layer migrates to the luminescent layer 1, and meets and recombines in the luminescent layer 1 to form excitons.
  • the excitons are deactivated and release energy; the released energy excites the luminescent molecules of the luminescent layer 1, and the excited luminescent molecules undergo radiation relaxation. Emit visible light.
  • a charge generation layer 2 is provided between two adjacent light-emitting layers 1.
  • the charge generation layer 2 can also generate holes and electrons. Injecting into the light-emitting layer 1 on both sides of the charge generation layer 2 can increase the number of excitons formed by the recombination of electrons and holes in the light-emitting layer 1, thereby improving the luminous efficiency of the organic light-emitting diode.
  • the turn-on voltage of the second light-emitting part 12 corresponding to the second charge generation part 22 can be increased, because the thickness of the second charge generation part 22 is reduced.
  • the energy band bending of the second charge generation part 22 is incomplete, causing the turn-on voltage of the second light-emitting part 12 to increase.
  • the charge generation layer 2 includes a P-type charge generation layer P and an N-type charge generation layer N that are stacked along the thickness direction of the display panel; at least the first charge generation portion 21
  • the thickness of the P-type charge generation layer P is greater than the thickness of the P-type charge generation layer P of the second charge generation portion 22 .
  • the charge generation layer 2 includes a P-type charge generation layer P and an N-type charge generation layer N. Under the action of an external reverse voltage, electrons in the P-type charge generation layer P migrate to the N-type charge generation layer N. As a result, more holes are generated and migrate to the adjacent light-emitting layer 1; electrons in the N-type charge generation layer N migrate to the adjacent light-emitting layer 1.
  • the double electrode formed by the charge generation layer 2 is divided into holes and electrons. Due to Zener breakdown, it is injected into the light-emitting layers 1 on both sides through the channel, and recombines with the electrons and holes in the light-emitting layers 1 on both sides to form excitons. Thereby, the light-emitting layer 1 emits light.
  • the thickness change of the P-type charge generation layer P has a greater impact on the numerical change of the turn-on voltage of the corresponding light-emitting part, while the thickness change of the N-type charge generation layer N has a greater influence on the turn-on voltage of the corresponding light-emitting part. Numerical changes have little impact.
  • the turn-on voltage of the corresponding light-emitting part changes between 5.81 and 6.97V, and the turn-on voltage of the light-emitting part changes.
  • the maximum difference in bright voltage is 1.16V (that is, the difference between 6.97V and 5.81V is 1.16V).
  • the change difference in the turn-on voltage of the corresponding light-emitting part is about 0.01V, which is very small.
  • the thickness of the P-type charge generation layer P of the first charge generation part 21 is made greater than the thickness of the P-type charge generation layer P of the second charge generation part 22, it is possible to thin the second charge generation layer.
  • the thickness of the P-type charge generation layer P of the first charge generation portion 22 is increased, and/or the thickness of the P-type charge generation layer P of the first charge generation portion 21 is increased to reduce the turn-on voltage of the second light-emitting portion 12 and the first light-emitting portion 11
  • the difference between the driving voltages avoids the color mixing problem in which the second light-emitting part 12 is also lit when the first light-emitting part 11 is lit.
  • the thickness of the portion of the charge generation layer 2 adjacent to the P-type charge generation layer P of the first charge generation portion 21 can also be increased at the same time, and/ Or, reduce the thickness of the portion of the charge generation layer 2 adjacent to the P-type charge generation layer P of the second charge generation portion 22 to ensure that the turn-on voltage can be effectively adjusted.
  • the material of the P-type charge generation layer P may include P-type inorganic semiconductor material, P-type metal dopant or P-type organic semiconductor material
  • the material of the N-type charge generation layer N may include N-type inorganic semiconductor material, N-type metal dopant agent or N-type organic semiconductor material.
  • the selection of dopants for the P-type charge generation layer P and the N-type charge generation layer N is not limited.
  • the P-type charge generation layer P and the N-type charge generation layer N can be made of the same type of material, or they can They are different types of materials and there are no special restrictions.
  • the P-type charge generation layer P includes a P-type organic semiconductor material and a P-type metal dopant.
  • the P-type organic semiconductor material may include materials such as TCNQ (tetracyanoquinodimethane) and F4-TCNQ (2,3, Quinone derivatives of 5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane), etc., but are not limited thereto.
  • P-type metal dopants may include metal halides, such as CuI, AgI, BiI3, etc.
  • the N-type charge generation layer N may include an N-type organic semiconductor material and an N-type metal dopant.
  • the N-type organic semiconductor material may include an organic compound of triazine.
  • the N-type metal dopant may be some active metal, such as Yb( Ytterbium) or Li (lithium), etc.
  • the thickness of the P-type charge generation layer P of the first charge generation part 21 is 3 nm to 20 nm; and/or the thickness of the P-type charge generation layer P of the second charge generation part 22 is 1 nm. ⁇ 3nm.
  • the thickness of the P-type charge generation layer P of the first charge generation part 21 needs to be greater than the thickness of the P-type charge generation layer P of the second charge generation part 22.
  • the thickness of the P-type charge generation layer P of the second charge generation part 22 needs to be less than 3 nm.
  • the thickness of the P-type charge generation layer P of the first charge generation part 21 is 10 nm
  • the thickness of the P-type charge generation layer P of the second charge generation part 22 is 2 nm, while ensuring a relative increase in the size of the second light-emitting part 12 While reducing the turn-on voltage, the normal light-emitting display of the first light-emitting part 11 and the second light-emitting part 12 will not be affected.
  • the turn-on voltage of the corresponding second light-emitting part 12 has a sudden change.
  • the corresponding turn-on voltages of the second light emitting part 12 are both 5.85V.
  • the thickness of the P-type charge generation layer P of the second charge generation part 22 is 3 nm, the corresponding turn-on voltage of the second light-emitting part 12 is 5.86V.
  • the thickness of the P-type charge generation layer P of the second charge generation part 22 is 2 nm
  • the corresponding turn-on voltage of the second light-emitting part 12 is 6.97V
  • the difference is 1.11V (that is, the P-type charge generation layer P
  • the thickness of the P-type charge generation layer P of the second charge generation part 22 can be set to 2 nm to ensure the corresponding increase effect of the turn-on voltage of the second light-emitting part 12.
  • the display panel further includes an organic layer 5.
  • the organic layer 5 is provided between the P-type charge generation layer P and the N-type charge generation layer N; along the thickness direction of the display panel,
  • the orthographic projection of the organic layer 5 on the charge generation layer 2 covers the orthographic projection of the first light emitting part 11 on the charge generation layer 2 .
  • the inventor found through research that when the organic layer 5 is provided between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the first light-emitting part 11, electrons can escape from the P-type charge generation layer P tunnels to the N-type charge generation layer N without overcoming the energy level barrier.
  • the current density of the first light-emitting part 11 under the same voltage is significantly increased, that is, the electron mobility is increased, thereby reducing the current density of the first light-emitting part 11 the driving voltage.
  • the P-type charge generation layer P corresponding to the first light-emitting part 11 is 2 nm and the thickness of the N-type charge generation layer N is 5 nm
  • the P-type charge generation layer P and N corresponding to the first light-emitting part 11 When the organic layer 5 with a thickness of 1 nm is provided between the charge generation layers N, the driving voltage of the first light-emitting part 11 decreases from 8.26V to 7.41V compared with not providing the organic layer 5, and the driving voltage reduction effect is obvious.
  • the applicant also found that when the turn-on voltage of the second light-emitting part 12 is relatively increased by thinning the thickness of the P-type charge generation layer P of the second charge generation part 22, the driving voltage of the second light-emitting part 12 will also increase accordingly.
  • the increase affects the normal light-emitting display of the second light-emitting part 12 . Therefore, in order to reduce the driving voltage of the second light-emitting part 12, the organic layer 5 may be provided between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the second light-emitting part 12. Specifically, please refer to FIG. 5 .
  • the orthographic projection of the organic layer 5 on the charge generation layer 2 covers the orthographic projection of the second light-emitting part 12 on the charge generation layer 2 .
  • the organic layer 5 may be provided only between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the first light-emitting part 11 , or may only be provided between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the second light-emitting part 12 .
  • An organic layer 5 is provided between the charge generation layer P and the N-type charge generation layer N. That is, the organic layer 5 is patterned or formed accordingly using FMM (Fine Mask).
  • FMM Feine Mask
  • the organic layer 5 can be provided as a whole layer to cover the entire N-type charge generation layer N.
  • the organic layer 5 can also be provided between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the first light-emitting part 11, and the first The P-type charge generation layer P corresponding to the light-emitting part 11 and the P-type charge generation layer P corresponding to the second light-emitting part 12 have the same thickness.
  • the N-type charge generation layer N corresponding to the first light-emitting part 11 has the same thickness as the second light-emitting part 12 .
  • the thickness of the N-type charge generation layer N corresponding to the portion 12 is the same, that is, by reducing the driving voltage of the first light-emitting portion 11, the gap between the turn-on voltage of the second light-emitting portion 12 and the driving voltage of the first light-emitting portion 11 is reduced. difference, thereby solving the problem of color mixing.
  • the material of the organic layer 5 is the same as the material of one of the P-type charge generation layer P and the N-type charge generation layer N.
  • the organic layer 5 can be formed through the same process as the organic part of one of the P-type charge generation layer P and the N-type charge generation layer N to reduce production costs, and the first light emission corresponding to the organic layer 5
  • the driving voltage of the part 11 and/or the second light-emitting part 12 decreases slightly, and the voltage drift can be suppressed without affecting the efficiency.
  • the N-type charge generation layer N includes an N-type organic semiconductor material and an N-type metal dopant
  • the N-type organic semiconductor material and the N-type metal dopant are deposited on the light-emitting layer 1 at the same time, and are doped with each other to form an N-type
  • the control switch of the N-type metal dopant is turned off, and only the N-type organic semiconductor material is controlled to continue to be deposited on the N-type charge generation layer N, that is, the N-type organic semiconductor material is used as Organic layer 5, this process method can effectively simplify the production process and reduce costs.
  • the material of the organic layer 5 includes at least one of a phenyl-containing compound, a carbazole-containing compound, a triazine-containing compound, and a phenanthroline-containing compound.
  • the material of the organic layer 5 may include N-(1,1'-diphenyl-2-yl)-N-(9,9-dimethyl-fluoren-2-yl)-9,9'-spiro Fluoren-2-yl-amine; N4, N4-bis([1,1'-biphenyl]-4-yl)-N4'-([1,1':4',1"-terphenyl]-4 -N4'-phenyl-[1,1'-biphenyl]-4,4'-diamine; 5-(4-(4,6-diphenyl-1,3,5-triazine) -2-yl)dibenzo[b,d]thiophen-2-yl)-7,7-dimethyl-5,7-dihydroindeno[2,1-b]carbazole; 2,9- Bis(naphthyl-2-yl)-4,7-diphenyl-1,10-phenanthroline; 4,7-diphen
  • the thickness of the organic layer 5 is less than or equal to the thickness of the P-type charge generation layer P and the N-type charge generation layer N, that is, the thickness of the organic layer 5 is neither less than or equal to is equal to the thickness of the P-type charge generation layer, and at the same time, the thickness of the organic layer 5 is less than or equal to the thickness of the N-type charge generation layer N.
  • the thickness of the organic layer 5 should not be too large, otherwise it will affect the overall thickness of the display panel, and may cause the driving voltage of the corresponding light-emitting part to change too much, affecting its normal operation.
  • the thickness of the organic layer 5 is 1 nm to 2 nm.
  • the thickness of the organic layer 5 may be 1 nm, 1.5 nm or 2 nm.
  • the light-emitting layer 1 further includes a third light-emitting part 13 , and the third light-emitting part 13 and the first light-emitting part 11 are arranged adjacently; the charge generation layer 2 further includes a third light-emitting part 13 .
  • the orthographic projection of the third charge generation portion 23 on the light-emitting layer 1 covers the third light-emitting portion 13 .
  • the thickness of the first charge generation portion 21 is greater than that of the third charge generation portion 23 . thickness.
  • the second light-emitting part 12 and the third light-emitting part 13 are both arranged adjacent to the first light-emitting part 11.
  • the second light-emitting part 12 and the third light-emitting part 13 are The three light-emitting parts 13 are all lit, and there is a problem of color mixing.
  • the thickness of the first charge generation part 21 is greater than the thickness of the third charge generation part 23 , that is, the thickness of the third charge generation part 23 can be thinned or the thickness of the first charge generation part 21 can be increased, so that The turn-on voltage of the third light-emitting part 13 is relatively increased, reducing the difference between the turn-on voltage of the third light-emitting part 13 and the driving voltage of the first light-emitting part 11, preventing the first light-emitting part 11 and the third light-emitting part 13 from There is current crosstalk between them, thus avoiding the color mixing problem in which the third light-emitting part 13 is also lit when the first light-emitting part 11 is lit.
  • the thickness of the third charge generation part 23 is equal to the thickness of the second charge generation part 22, that is, the P-type charge generation layer P and the N-type charge generation layer N of the third charge generation part 23 may be in contact with the second charge generation part 23.
  • the thicknesses of the P-type charge generation layer P and the N-type charge generation layer N of 22 are equal to facilitate preparation.
  • the first light-emitting part 11 , the second light-emitting part 12 and the third light-emitting part 13 are light-emitting parts that emit light in different colors.
  • the first light-emitting part 11, the second light-emitting part 12, and the third light-emitting part 13 are respectively one of a red light-emitting part, a green light-emitting part, and a blue light-emitting part, so that the red light-emitting part, the green light-emitting part, and the blue light-emitting part
  • the red light, green light and blue light emitted by the light-emitting part cooperate with each other to realize the color display of the display panel.
  • the organic layer 5 may also be provided only between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the first light-emitting part 11 to reduce the first The driving voltage of the light emitting part 11.
  • the organic layer 5 may also be provided only between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the second light-emitting part 12 and the third light-emitting part 13 to solve the problem caused by the second light-emitting part 12 and the third light-emitting part 13 .
  • the driving voltage of the second light-emitting part 12 and the third light-emitting part 13 increases due to the thinning of the P-type charge generation layer P in the charge generation part 22 and the third charge generation part 23 .
  • a whole layer of organic layer 5 can also be provided to facilitate molding and reduce production costs.
  • the organic layer 5 is provided between the P-type charge generation layer P and the N-type charge generation layer N corresponding to the first, second, and third light-emitting parts 11, 12, and 13 through patterning.
  • the first light-emitting part 11 is a blue light-emitting part
  • the second light-emitting part 12 and the third light-emitting part 13 may be one of a red light-emitting part and a green light-emitting part respectively.
  • the driving voltage of the blue light-emitting part and the red light-emitting part, green By limiting the thickness of the first charge generation part 21 corresponding to the blue light-emitting part to be greater than the thickness of the second charge generation part 22 and the third charge generation part 23, the driving voltage of the blue light-emitting part and the red light-emitting part, green The difference between the turn-on voltages of the light-emitting parts prevents the red light-emitting part and the green light-emitting part from being lighted together due to current crosstalk when the blue light-emitting part is turned on.
  • An embodiment of the present application also provides a display device, including the display panel in any of the above embodiments.
  • the display device provided by the embodiments of the present application has the technical effects of the technical solution of the display panel in any of the above embodiments, and the explanation of the structures and terms that are the same as or corresponding to the above embodiments will not be repeated here.
  • the display device provided by the embodiment of the present application can be applied to mobile phones or any electronic product with a display function, including but not limited to the following categories: televisions, notebook computers, desktop monitors, tablet computers, digital cameras, smart phones Rings, smart glasses, vehicle-mounted displays, medical equipment, industrial control equipment, touch interactive terminals, etc.
  • the embodiments of this application do not specifically limit this.

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Abstract

本申请公开了一种显示面板及显示装置，显示面板包括：沿显示面板的厚度方向层叠设置的至少两层发光层，相邻两层发光层之间设有电荷产生层，电荷产生层包括第一电荷产生部和第二电荷产生部；沿垂直于显示面板的厚度方向上，发光层包括间隔设置的第一发光部和第二发光部，沿显示面板的厚度方向，第一电荷产生部在发光层上的正投影覆盖第一发光部，第二电荷产生部在发光层上的正投影覆盖第二发光部，第一电荷产生部的厚度大于第二电荷产生部的厚度。通过相对增大第二电荷产生部所对应的第二发光部的启亮电压，进而减少第二发光部的启亮电压和第一发光部的驱动电压之间的差值，避免出现第一发光部点亮时第二发光部一同被点亮的混色问题。

Description

显示面板及显示装置
相关申请的交叉引用
本申请要求享有于2022年08月19日提交的名称为“显示面板及显示装置”的中国专利申请第202211001559.7号的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本申请属于电子产品技术领域，尤其涉及一种显示面板及显示装置。
背景技术
随着科技的进步，智能手机、平板电脑等数字化显示装置得到广泛的应用，其中，显示面板是这些显示装置中不可或缺的人际沟通界面。诸如OLED(Organic Light Emitting Diode,有机发光二极管)显示面板，具有自发光、节能降耗、可弯曲、柔韧性佳等优点，且该实现显示的显示面板，其不需要背光源，具有反应速度快和显示效果好的特点，受到用户的关注，被广泛应用于智能手机、平板电脑等终端产品中。
OLED显示面板的有机发光器件可以分为单层结构和叠层结构，叠层结构相比单层结构而言，具有更高的亮度和寿命，因此其在电视、车载显示等领域具有较高的应用潜力。但是相关技术中的叠层结构的有机发光器件容易造成显示面板混色。
因此，亟需一种新的显示面板及显示装置。
发明内容
本申请实施例提供了一种显示面板及显示装置，通过使第一电荷产生部的厚度大于第二电荷产生部的厚度，以相对增大第二电荷产生部所对应的第二发光部的启亮电压，进而减少第二发光部的启亮电压和第一发光部的驱动电压之间的差值，避免出现第一发光部点亮时第二发光部一同被点 亮的混色问题。
第一方面，本申请实施例提供了一种显示面板，包括：沿所述显示面板的厚度方向层叠设置的至少两层发光层，相邻两层所述发光层之间设有电荷产生层，所述电荷产生层包括第一电荷产生部和第二电荷产生部；沿垂直于所述显示面板的厚度方向上，所述发光层包括间隔设置的第一发光部和第二发光部，沿所述显示面板的厚度方向，所述第一电荷产生部在所述发光层上的正投影覆盖所述第一发光部，所述第二电荷产生部在所述发光层上的正投影覆盖所述第二发光部，所述第一电荷产生部的厚度大于所述第二电荷产生部的厚度。
在本申请第一方面的一些实施例中，所述电荷产生层的所述第一电荷产生部和所述第二电荷产生部均包括沿所述显示面板的厚度方向层叠设置的P型电荷产生层和N型电荷产生层；至少所述第一电荷产生部的所述P型电荷产生层的厚度大于所述第二电荷产生部的所述P型电荷产生层的厚度。以相对提高第二发光部的启亮电压。
在本申请第一方面的一些实施例中，所述第一电荷产生部的所述P型电荷产生层的厚度为3nm～20nm；和/或，所述第二电荷产生部的所述P型电荷产生层的厚度为1nm～3nm。以保证第二发光部的启亮电压的提高效果。
在本申请第一方面的一些实施例中，所述显示面板还包括有机层，所述有机层设于所述P型电荷产生层和所述N型电荷产生层之间；沿所述显示面板的厚度方向，所述有机层在所述电荷产生层上的正投影覆盖所述第一发光部在所述电荷产生层上的正投影；和/或，沿所述显示面板的厚度方向，所述有机层在所述电荷产生层上的正投影覆盖所述第二发光部在所述电荷产生层上的正投影。以降低第一发光部和/或第二发光部的驱动电压。
在本申请第一方面的一些实施例中，所述有机层的材料和所述P型电荷产生层、所述N型电荷产生层中一者的材料相同。以降低生产成本。
在本申请第一方面的一些实施例中，沿所述显示面板的厚度方向，所述有机层的厚度均小于或者等于所述P型电荷产生层和所述N型电荷产生层的厚度；优选的，所述有机层的厚度为1nm～2nm。以保证显示面板厚度要求。
在本申请第一方面的一些实施例中，所述有机层的材料包括含苯基化合物、含咔唑化合物、含三嗪化合物以及含菲啰啉化合物中的至少一种。以起到降低第一发光部和/或第二发光部的驱动电压的功能。
在本申请第一方面的一些实施例中，所述发光层还包括第三发光部，所述第三发光部和所述第一发光部相邻设置，所述电荷产生层还包括第三电荷产生部，沿所述显示面板的厚度方向，所述第三电荷产生部在所述发光层上的正投影覆盖所述第三发光部，所述第一电荷产生部的厚度大于所述第三电荷产生部的厚度；优选的，所述第三电荷产生部的厚度等于所述第二电荷产生部的厚度。以避免第一发光部被点亮的同时第三发光部被点亮。
在本申请第一方面的一些实施例中，所述第一发光部、所述第二发光部以及所述第三发光部分别为红色发光部、绿色发光部以及蓝色发光部中的一者；优选的，所述第一发光部为蓝色发光部，所述第二发光部和所述第三发光部分别为红色发光部、绿色发光部中的一者。以避免蓝色发光部被点亮的同时红色发光部、绿色发光部被点亮。
第二方面，本申请提供了一种显示装置，包括上述任一实施例中的显示面板。
与现有技术相比，本申请实施例所提供的显示面板包括发光层和电荷产生层，发光层包括间隔设置的第一发光部和第二发光部。第一发光部和第二发光部共用一层电荷产生层，第一电荷产生部在发光层上的正投影覆盖第一发光部，即第一电荷产生部用于对应产生第一发光部的电子和空穴，第二电荷产生部在发光层上的正投影覆盖第二发光部，即第二电荷产生部用于对应产生第二发光部的电子和空穴。经研究发现，通过减薄第二电荷产生部的厚度和/或增大第一电荷产生部的厚度，以使得第二发光部的启亮电压相对增大。本实施例中通过使第一电荷产生部的厚度大于第二电荷产生部的厚度，以相对增大第二电荷产生部所对应的第二发光部的启亮电压，进而减少第二发光部的启亮电压和第一发光部的驱动电压之间的差值，防止第一发光部和第二发光部之间出现电流串扰，避免出现第一发光部点亮时第二发光部一同被点亮的混色问题。
附图说明
图1是本申请一种实施例提供的显示面板的膜层结构图；
图2是本申请另一种实施例提供的显示面板的膜层结构图；
图3是本申请又一种实施例提供的显示面板的膜层结构图；
图4是本申请又一种实施例提供的显示面板的膜层结构图；
图5是本申请又一种实施例提供的显示面板的膜层结构图；
图6是本申请又一种实施例提供的显示面板的膜层结构图；
图7是本申请又一种实施例提供的显示面板的膜层结构图；
图8是本申请又一种实施例提供的显示面板的膜层结构图；
图9是本申请又一种实施例提供的显示面板的膜层结构图；
图10是本申请又一种实施例提供的显示面板的膜层结构图。
具体实施方式
下面将详细描述本申请的各个方面的特征和示例性实施例，为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及具体实施例，对本申请进行进一步详细描述。应理解，此处所描述的具体实施例仅被配置为解释本申请，并不被配置为限定本申请。对于本领域技术人员来说，本申请可以在不需要这些具体细节中的一些细节的情况下实施。下面对实施例的描述仅仅是为了通过示出本申请的示例来提供对本申请更好的理解。
在不脱离本申请的精神或范围的情况下，在本申请中能进行各种修改和变化，这对于本领域技术人员来说是显而易见的。因而，本申请意在覆盖落入所对应权利要求(要求保护的技术方案)及其等同物范围内的本申请的修改和变化。需要说明的是，本申请实施例所提供的实施方式，在不矛盾的情况下可以相互组合。
在相关技术中，OLED器件采用电荷产生层连接两个发光单元，而电荷产生层往往迁移率较高，从而易造成载流子通过电荷产生层迁移到相邻像素，从而造成屏体的“混色”。发光单元均具有驱动电压和启亮电压，驱动电压可以理解为发光单元正常工作时的电压，启亮电压为发光单元的 亮度达到1nit(尼特)时的电压。经研究发现，当相邻的发光单元的驱动电压和另一者的启亮电压的差值过大时，就会突破电荷产生层自身阻挡载流子横向流动的阈值，相邻的发光单元会被一同点亮，出现混色的问题。
为了解决上述问题，本申请实施例提供了一种显示面板及显示装置，通过使第一电荷产生部的厚度大于第二电荷产生部的厚度，即通过减薄第二电荷产生部的厚度和/或增大第一电荷产生部的厚度，以使得第二发光部的启亮电压相对增大，进而减少第二发光部的启亮电压和第一发光部的驱动电压之间的差值，避免出现第一发光部点亮时第二发光部一同被点亮的混色问题。
本申请实施例提供了一种显示面板及显示装置，以下将结合附图1至图10对显示面板及显示装置的各实施例进行具体说明。
请参阅图1至图2，本申请实施例提供的一种显示面板，包括：沿显示面板的厚度方向层叠设置的至少两层发光层1，相邻两层发光层1之间设有电荷产生层2，电荷产生层2包括第一电荷产生部21和第二电荷产生部22；沿垂直于显示面板的厚度方向上，发光层1包括间隔设置的第一发光部11和第二发光部12，沿显示面板的厚度方向，第一电荷产生部21在发光层1上的正投影覆盖第一发光部11，第二电荷产生部22在发光层1上的正投影覆盖第二发光部12，第一电荷产生部21的厚度大于第二电荷产生部22的厚度。
本申请实施例所提供的显示面板包括发光层1和电荷产生层2，发光层1包括间隔设置的第一发光部11和第二发光部12。第一发光部11和第二发光部12共用一层电荷产生层2，第一电荷产生部21在发光层1上的正投影覆盖第一发光部11，即第一电荷产生部21用于对应产生第一发光部11的电子和空穴，第二电荷产生部22在发光层1上的正投影覆盖第二发光部1，即第二电荷产生部22用于对应产生第二发光部12的电子和空穴。经研究发现，通过减薄第二电荷产生部22的厚度和/或增大第一电荷产生部21的厚度，以使得第二发光部12的启亮电压相对增大。本实施例中，通过使第一电荷产生部21的厚度大于第二电荷产生部22的厚度，以增大第二电荷产生部22所对应的第二发光部12的启亮电压，进而减少第二发光 部12的启亮电压和第一发光部11的驱动电压之间的差值，防止第一发光部11和第二发光部12之间出现电流串扰，避免出现第一发光部11点亮时第二发光部12一同被点亮的混色问题。
可以理解的是，可以通过同时减薄第二电荷产生部22的厚度以及增大第一电荷产生部21的厚度，使得第二发光部12的启亮电压相对增大。
可选的，如图2所示，显示面板包括两层发光层1，即第一发光层F1和第二发光层F2，显示面板包括层叠设置的阴极3、电子注入层6、第一电子传输层D1、第一发光层F1、第一空穴传输层K1、电荷产生层2、第二电子传输层D2、第二发光层F2、第二空穴传输层K2、空穴注入层7和阳极4。可以理解的是，图1、图3-图10仅示意性的示出了显示面板的部分膜层结构。
OLED显示面板的发光原理为发光层1在外加电场的驱动下，通过阳极4和阴极3的载流子注入和复合导致发光的现象，上述载流子包括电子和空穴。具体地，在驱动电压的作用下，作为载流子的电子和空穴分别从阴极3和阳极4注入到电子注入层6和空穴注入层7，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层1，并在发光层1中相遇复合形成激子，激子退激活放出能量；释放的能量使发光层1的发光分子激发，激发后的发光分子经过辐射弛豫而发出可见光。
本申请实施例的显示面板的相邻两层发光层1之间设有电荷产生层2，除了阴极3、阳极4可以产生电子和空穴外，电荷产生层2也可以产生空穴和电子，分别注入电荷产生层2两侧的发光层1，可以提高发光层1电子和空穴复合形成激子的数量，从而提高有机发光二极管的发光效率。
经研究发现，通过减小第二电荷产生部22的厚度能够增大第二电荷产生部22所对应的第二发光部12的启亮电压，是因为在第二电荷产生部22的厚度减小后，在外加电场的驱动下，第二电荷产生部22的能带弯曲不完全，从而使得第二发光部12的启亮电压上升。
请参阅图3，在一些可选的实施例中，电荷产生层2包括沿显示面板的厚度方向层叠设置的P型电荷产生层P和N型电荷产生层N；至少第一电荷产生部21的P型电荷产生层P的厚度大于第二电荷产生部22的P型 电荷产生层P的厚度。
需要说明的是，电荷产生层2包括P型电荷产生层P和N型电荷产生层N，在外加反向电压的作用下，P型电荷产生层P的电子向N型电荷产生层N迁移，从而产生较多的空穴向与之相邻的发光层1迁移；N型电荷产生层N的电子向与之相邻的发光层1迁移。电荷产生层2形成的偶电极分成了空穴和电子，由于齐纳击穿通过通道注入到两侧的发光层1，分别与两侧的发光层1中的电子和空穴复合形成激子，从而使发光层1发光。
经多次实验仿真得到，P型电荷产生层P的厚度变化对于对应发光部的启亮电压的数值变化影响较大，而N型电荷产生层N的厚度变化对于对应发光部的启亮电压的数值变化影响较小。
具体的，在控制P型电荷产生层P的厚度在1nm～10nm之间取值，其他条件保持不变时，所对应的发光部的启亮电压在5.81～6.97V间变化，发光部的启亮电压的最大差值为1.16V(即6.97V与5.81V之间的差为1.16V)。在控制N型电荷产生层N的厚度在1nm～10nm之间取值，其他条件保持不变时，所对应的发光部的启亮电压的变化差值在0.01V左右，变化很小。
因而，本申请实施例通过使至少第一电荷产生部21的P型电荷产生层P的厚度大于第二电荷产生部22的P型电荷产生层P的厚度，即可以通过减薄第二电荷产生部22的P型电荷产生层P的厚度，和/或增大第一电荷产生部21的P型电荷产生层P的厚度，以减少第二发光部12的启亮电压和第一发光部11的驱动电压之间的差值，避免出现第一发光部11点亮时第二发光部12一同被点亮的混色问题。为了保证P型电荷产生层P的电子传输效果，还可以同时增大电荷产生层2中和第一电荷产生部21的P型电荷产生层P相邻的部分电荷产生层2的厚度，和/或，减小电荷产生层2中和第二电荷产生部22的P型电荷产生层P相邻的部分电荷产生层2的厚度，从而保证启亮电压能够被有效调整。
P型电荷产生层P的材料可以包括P型无机半导体材料、P型金属掺杂剂或者P型有机半导体材料，N型电荷产生层N的材料可以包括N型无机半导体材料、N型金属掺杂剂或者N型有机半导体材料。在实际应用中， P型电荷产生层P和N型电荷产生层N的掺杂剂的选择不做限制，P型电荷产生层P和N型电荷产生层N可以为同种类的材料，也可以是不同种类的材料，并无特殊限定。
可选的，P型电荷产生层P包括P型有机半导体材料和P型金属掺杂剂，P型有机半导体材料可以包括诸如TCNQ(四氰基醌二甲烷)和F4-TCNQ(2，3，5，6-四氟-7，7'，8，8'-四氰基醌二甲烷)的醌衍生物等，但不限于此。P型金属掺杂剂可以包括金属卤化物，例如CuI、AgI、BiI3等。
N型电荷产生层N可以包括N型有机半导体材料和N型金属掺杂剂，N型有机半导体材料可以包括三嗪的有机化合物，N型金属掺杂剂可以是一些活泼金属，例如，Yb(镱)或Li(锂)等。
在一些可选的实施例中，第一电荷产生部21的P型电荷产生层P的厚度为3nm～20nm；和/或，第二电荷产生部22的P型电荷产生层P的厚度为1nm～3nm。
可以理解的是，第一电荷产生部21的P型电荷产生层P的厚度需要大于第二电荷产生部22的P型电荷产生层P的厚度，例如，当第一电荷产生部21的P型电荷产生层P的厚度为3nm时，第二电荷产生部22的P型电荷产生层P的厚度需要小于3nm。可选的，第一电荷产生部21的P型电荷产生层P的厚度为10nm，第二电荷产生部22的P型电荷产生层P的厚度为2nm，在保证相对增大第二发光部12的启亮电压的同时，不会影响第一发光部11和第二发光部12的正常发光显示。
经实验得到，当第二电荷产生部22的P型电荷产生层P的厚度为2nm时，对应的第二发光部12的启亮电压具有突变。例如当第二电荷产生部22的P型电荷产生层P的厚度为4nm和5nm时，所对应的第二发光部12的启亮电压均为5.85V。当第二电荷产生部22的P型电荷产生层P的厚度为3nm时，所对应的第二发光部12的启亮电压为5.86V。而当第二电荷产生部22的P型电荷产生层P的厚度为2nm时，所对应的第二发光部12的启亮电压为6.97V，差值为1.11V(即P型电荷产生层P的厚度为3nm时所对应的第二发光部12的启亮电压5.86V，与P型电荷产生层P的厚度为2nm 时所对应的第二发光部12的启亮电压6.97V之间的差值)，因而可以将第二电荷产生部22的P型电荷产生层P的厚度设置为2nm，以保证所对应的第二发光部12的启亮电压的增大效果。
可以理解的是，为了减少第二发光部12的启亮电压和第一发光部11的驱动电压之间的差值，除了可以相对增大第二发光部12的启亮电压外，还可以通过减小第一发光部11的驱动电压的方式来实现。
请参阅图4，在一些可选的实施例中，显示面板还包括有机层5，有机层5设于P型电荷产生层P和N型电荷产生层N之间；沿显示面板的厚度方向，有机层5在电荷产生层2上的正投影覆盖第一发光部11在电荷产生层2上的正投影。
需要说明的是，经由发明人研究发现，当在第一发光部11所对应的P型电荷产生层P和N型电荷产生层N之间设置有机层5时，电子可从P型电荷产生层P向N型电荷产生层N遂穿，而不需要克服能阶势垒，第一发光部11在相同电压下的电流密度明显提升，即提高了电子迁移率，进而降低了第一发光部11的驱动电压。
例如，当第一发光部11对应的P型电荷产生层P的厚度为2nm，N型电荷产生层N的厚度为5nm时，在第一发光部11所对应的P型电荷产生层P和N型电荷产生层N之间设置厚度为1nm的有机层5时，相比于不设置有机层5，第一发光部11的驱动电压从8.26V下降到7.41V，驱动电压降低效果明显。
同时，申请人还发现在通过减薄第二电荷产生部22的P型电荷产生层P的厚度以相对提高第二发光部12的启亮电压时，第二发光部12的驱动电压也会随之增大，影响第二发光部12的正常发光显示。因而，为了降低第二发光部12的驱动电压，也可以在第二发光部12所对应的P型电荷产生层P和N型电荷产生层N之间设置有机层5。具体的，请参阅图5，沿显示面板的厚度方向，有机层5在电荷产生层2上的正投影覆盖第二发光部12在电荷产生层2上的正投影。通过设置有机层5来解决因第二电荷产生部22的P型电荷产生层P的厚度减薄而导致的第二发光部12驱动电压上升的问题。
需要说明的是，可以仅在第一发光部11所对应的P型电荷产生层P和N型电荷产生层N之间设置有机层5，也可以仅在第二发光部12所对应的P型电荷产生层P和N型电荷产生层N之间设置有机层5，即对有机层5进行图案化处理，或者采用FMM(精细掩膜版)对应成型。当然，为了简化生产工艺，降低生产成本，请参阅图6，也可以在第一发光部11、第二发光部12所对应的P型电荷产生层P和N型电荷产生层N之间均设置有机层5，即有机层5可以设置一整层，覆盖整个N型电荷产生层N。
可以理解的是，在一些可选的其他的实施例中，也可以在第一发光部11所对应的P型电荷产生层P和N型电荷产生层N之间设置有机层5，而第一发光部11所对应的P型电荷产生层P与第二发光部12所对应的P型电荷产生层P的厚度相同，同时第一发光部11所对应的N型电荷产生层N与第二发光部12所对应的N型电荷产生层N的厚度相同，即通过降低第一发光部11的驱动电压，以减小第二发光部12的启亮电压和第一发光部11的驱动电压之间的差值，进而解决混色的问题。
在一些可选的实施例中，有机层5的材料和P型电荷产生层P、N型电荷产生层N中一者的材料相同。
可以理解的是，有机层5可以和P型电荷产生层P、N型电荷产生层N中一者的有机部分通过同一道工艺成型，以降低生产成本，且有机层5所对应的第一发光部11和/或第二发光部12的驱动电压小幅下降，电压漂移可以抑制，且不影响效率。具体的，当N型电荷产生层N包括N型有机半导体材料和N型金属掺杂剂时，N型有机半导体材料和N型金属掺杂剂同时沉积于发光层1，相互掺杂形成N型电荷产生层N，N型电荷产生层N形成后，关闭N型金属掺杂剂的控制开关，仅控制N型有机半导体材料继续沉积在N型电荷产生层N上，即N型有机半导体材料作为有机层5，此种工艺方法可有效简化生产工艺，降低成本。
可选的，有机层5的材料包括含苯基化合物、含咔唑化合物、含三嗪化合物以及含菲啰啉化合物中的至少一种。
具体的，有机层5的材料可以包括N-(1，1'-二苯-2-基)-N-(9，9-二甲基-芴-2-基)-9，9'-螺芴-2-基-胺；N4，N4-二([1，1'-联苯]-4-基)- N4'-([1，1':4'，1”-三联苯]-4-基)-N4'-苯基-[1，1'-联苯]-4，4'-二胺；5-(4-(4，6-二苯基-1，3，5-三嗪-2-基)二苯并[b，d]噻吩-2-基)-7，7-二甲基-5，7-二氢茚并[2，1-b]咔唑；2，9-二(萘-2-基)-4，7-二苯基-1，10-菲咯啉；4，7-二苯基-1，10-菲啰啉1，3，5-三(1-苯基-1H-苯并咪唑-2-基苯)中的至少一者。
在一些可选的实施例中，沿显示面板的厚度方向，有机层5的厚度均小于或者等于P型电荷产生层P和N型电荷产生层N的厚度，即有机层5的厚度既小于或者等于P型电荷产生层的厚度，同时有机层5的厚度又小于或者等于N型电荷产生层N的厚度。可以理解的是，有机层5的厚度不宜过大，过大会影响显示面板的整体厚度，且可能会导致对应的发光部的驱动电压变化过大，影响其正常工作。可选的，有机层5的厚度为1nm～2nm，例如，有机层5的厚度可以为1nm、1.5nm或2nm。
请参阅图7至图10，在一些可选的实施例中，发光层1还包括第三发光部13，第三发光部13和第一发光部11相邻设置；电荷产生层2还包括第三电荷产生部23，沿显示面板的厚度方向，第三电荷产生部23在发光层1上的正投影覆盖第三发光部13，第一电荷产生部21的厚度大于第三电荷产生部23的厚度。
可以理解的是，第二发光部12和第三发光部13均与第一发光部11相邻设置，为了避免在第一发光部11点亮时，由于电流串扰，第二发光部12和第三发光部13均被点亮，出现混色的问题。本实施例中的第一电荷产生部21的厚度大于第三电荷产生部23的厚度，即可以通过减薄第三电荷产生部23的厚度或者增大第一电荷产生部21的厚度，以使得第三发光部13的启亮电压相对增大，减少第三发光部13的启亮电压和第一发光部11的驱动电压之间的差值，防止第一发光部11和第三发光部13之间出现电流串扰，避免出现第一发光部11点亮时第三发光部13一同被点亮的混色问题。
可选的，第三电荷产生部23的厚度等于第二电荷产生部22的厚度，即第三电荷产生部23的P型电荷产生层P、N型电荷产生层N可以和第二电荷产生部22的P型电荷产生层P、N型电荷产生层N的厚度均相等，以 便于制备。
需要说明的是，第一发光部11、第二发光部12和第三发光部13为发光颜色不同的发光部。例如，第一发光部11、第二发光部12以及第三发光部13分别为红色发光部、绿色发光部以及蓝色发光部中的一者，以通过红色发光部、绿色发光部以及蓝色发光部所发出的红光、绿光以及蓝光相互配合实现显示面板的彩色显示。
如图8所示，在设置有三个发光部时，有机层5也可以仅设置在对应第一发光部11的P型电荷产生层P和N型电荷产生层N之间，以减小第一发光部11的驱动电压。或者，如图9所示，也可以仅在第二发光部12和第三发光部13对应的P型电荷产生层P和N型电荷产生层N之间设置有机层5，以解决因第二电荷产生部22和第三电荷产生部23的P型电荷产生层P的厚度减薄而导致的第二发光部12和第三发光部13的驱动电压上升的问题。如图10所示，还可以设置一整层的有机层5，便于成型，降低生产成本。或者通过图案化处理将有机层5在对应第一发光部11、第二发光部12和第三发光部13的P型电荷产生层P和N型电荷产生层N之间设置。
经研究发现，在红色发光部、绿色发光部以及蓝色发光部三色发光部中主要的混色现象发生在蓝色发光部点亮时，红色发光部或者绿色发光部同时被点亮。因而，可选的，第一发光部11为蓝色发光部，第二发光部12和第三发光部13可以分别为红色发光部、绿色发光部中的一者。
通过限制蓝色发光部所对应的第一电荷产生部21的厚度大于第二电荷产生部22和第三电荷产生部23的厚度，以减小蓝色发光部的驱动电压和红色发光部、绿色发光部的启亮电压之间的差值，避免在点亮蓝色发光部时，由于电流串扰而导致的红色发光部、绿色发光部一同被点亮。
本申请实施例还提供了一种显示装置，包括上述任一实施例中的显示面板。
因此，本申请实施例提供的显示装置具有上述任一实施例中显示面板的技术方案所具有的技术效果，与上述实施例相同或相应的结构以及术语的解释在此不再赘述。
本申请实施例提供的显示装置可以应用于手机，也可以为任何具有显示功能的电子产品，包括但不限于以下类别：电视机、笔记本电脑、桌上型显示器、平板电脑、数码相机、智能手环、智能眼镜、车载显示器、医疗设备、工控设备、触摸交互终端等，本申请实施例对此不作特殊限定。
以上，仅为本申请的具体实施方式，所属领域的技术人员可以清楚地了解到，为了描述的方便和简洁，上述描述的系统、模块和部的具体工作过程，可以参考前述方法实施例中的对应过程，在此不再赘述。应理解，本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到各种等效的修改或替换，这些修改或替换都应涵盖在本申请的保护范围之内。
还需要说明的是，本申请中提及的示例性实施例，基于一系列的步骤或者装置描述一些方法或系统。但是，本申请不局限于上述步骤的顺序，也就是说，可以按照实施例中提及的顺序执行步骤，也可以不同于实施例中的顺序，或者若干步骤同时执行。

Claims (15)

  1. 一种显示面板，包括：
    沿所述显示面板的厚度方向层叠设置的至少两层发光层，相邻两层所述发光层之间设有电荷产生层，所述电荷产生层包括第一电荷产生部和第二电荷产生部；
    沿垂直于所述显示面板的厚度方向上，所述发光层包括间隔设置的第一发光部和第二发光部，沿所述显示面板的厚度方向，所述第一电荷产生部在所述发光层上的正投影覆盖所述第一发光部，所述第二电荷产生部在所述发光层上的正投影覆盖所述第二发光部，所述第一电荷产生部的厚度大于所述第二电荷产生部的厚度。
  2. 根据权利要求1所述的显示面板，其中，所述电荷产生层的所述第一电荷产生部和所述第二电荷产生部均包括沿所述显示面板的厚度方向层叠设置的P型电荷产生层和N型电荷产生层；
    至少所述第一电荷产生部的所述P型电荷产生层的厚度大于所述第二电荷产生部的所述P型电荷产生层的厚度。
  3. 根据权利要求2所述的显示面板，其中，所述第一电荷产生部的所述P型电荷产生层的厚度为3nm～20nm。
  4. 根据权利要求2所述的显示面板，其中，所述第二电荷产生部的所述P型电荷产生层的厚度为1nm～3nm。
  5. 根据权利要求2所述的显示面板，其中，所述显示面板还包括有机层，所述有机层设于所述P型电荷产生层和所述N型电荷产生层之间；
    沿所述显示面板的厚度方向，所述有机层在所述电荷产生层上的正投影覆盖所述第一发光部在所述电荷产生层上的正投影。
  6. 根据权利要求5所述的显示面板，其中，沿所述显示面板的厚度方向，所述有机层在所述电荷产生层上的正投影覆盖所述第二发光部在所述电荷产生层上的正投影。
  7. 根据权利要求5所述的显示面板，其中，所述有机层的材料和所述P 型电荷产生层、所述N型电荷产生层中一者的材料相同。
  8. 根据权利要求5所述的显示面板，其中，沿所述显示面板的厚度方向，所述有机层的厚度均小于或者等于所述P型电荷产生层和所述N型电荷产生层的厚度。
  9. 根据权利要求5所述的显示面板，其中，所述有机层的厚度为1nm～2nm。
  10. 根据权利要求5所述的显示面板，其中，所述有机层的材料包括含苯基化合物、含咔唑化合物、含三嗪化合物、以及含菲啰啉化合物中的至少一种。
  11. 根据权利要求1-10任一项所述的显示面板，其中，所述发光层还包括第三发光部，所述第三发光部和所述第一发光部相邻设置，所述电荷产生层还包括第三电荷产生部，沿所述显示面板的厚度方向，所述第三电荷产生部在所述发光层上的正投影覆盖所述第三发光部，所述第一电荷产生部的厚度大于所述第三电荷产生部的厚度。
  12. 根据权利要求11所述的显示面板，其中，所述第三电荷产生部的厚度等于所述第二电荷产生部的厚度。
  13. 根据权利要求11所述的显示面板，其中，所述第一发光部、所述第二发光部以及所述第三发光部分别为红色发光部、绿色发光部以及蓝色发光部中的一者。
  14. 根据权利要求13所述的显示面板，其中，所述第一发光部为蓝色发光部，所述第二发光部和所述第三发光部分别为红色发光部、绿色发光部中的一者。
  15. 一种显示装置，包括权利要求1至14任一项所述的显示面板。
PCT/CN2022/126248 2022-08-19 2022-10-19 显示面板及显示装置 Ceased WO2024036741A1 (zh)

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CN118890915A (zh) * 2024-07-09 2024-11-01 上海天马微电子有限公司 显示面板和显示装置

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