WO2024018937A1

WO2024018937A1 - Joining method and joining apparatus

Info

Publication number: WO2024018937A1
Application number: PCT/JP2023/025386
Authority: WO
Inventors: 朗山内
Original assignee: ボンドテック株式会社
Priority date: 2022-07-21
Filing date: 2023-07-10
Publication date: 2024-01-25

Abstract

A joining method for joining a substrate (W1) and a substrate (W2) that is vibrating relative to the substrate (W1), the method comprising: a vibration waveform identification step for identifying, from a time course of a displacement amount, a vibration waveform of the vibration of the substrate (W2) relative to the substrate (W1); a timing estimation step for estimating a target timing at which the displacement amount of the substrate (W2) relative to the substrate (W1) becomes a target amount, on the basis of the vibration waveform; and a contact step for bringing the substrate (W2) into contact with the substrate (W1), on the basis of the estimated target timing.

Description

Bonding method and device

The present invention relates to a bonding method and a bonding device.

After measuring the amount of misalignment of both objects with one of them held on the stage and the other on the head, and aligning the objects based on the amount of misalignment. , a joining device for joining objects to be joined has been proposed (see, for example, Patent Document 1).

Japanese Patent Application Publication No. 2011-066287

By the way, depending on the installation location of the bonding device, vibration may occur in the bonding device. In this case, in the bonding apparatus described in Patent Document 1, the head vibrates relative to the stage, and there is a possibility that the relative displacement amount of the two objects to be bonded cannot be accurately measured. If the measurement accuracy of the amount of positional deviation of both objects to be welded is low, it becomes difficult to join both objects to be welded with high positional accuracy.

The present invention has been made in view of the above reasons, and an object of the present invention is to provide a joining method and a joining apparatus that can join objects to be joined with high positional accuracy.

In order to achieve the above object, the joining method according to the present invention includes:
A joining method for joining a first workpiece and a second workpiece vibrating relative to the first workpiece, the method comprising:
a vibration waveform identification step of identifying a vibration waveform of vibration of the second workpiece relative to the first workpiece based on a time course of a positional shift amount of the second workpiece relative to the first workpiece;
a timing estimation step of estimating a target timing at which a positional deviation amount of the second workpiece relative to the first workpiece becomes a target amount based on the vibration waveform;
and a contacting step of bringing the second object to be joined into contact with the first object to be welded based on the estimated target timing.

The joining device according to the present invention seen from another point of view is as follows:
A welding device for joining a first object to be welded and a second object to be welded,
a first object holding part that holds the first object to be bonded;
a second workpiece holding part that vibrates with respect to the first workpiece holding part and holds the second workpiece;
At least one of the first workpiece holding part and the second workpiece holding part is moved in the first direction in which the first workpiece holding part and the second workpiece holding part approach each other, or in the first direction. a holding part drive unit that moves the first workpiece holding part and the second workpiece holding part in a second direction where they are separated;
In a state where the first object to be welded and the second object to be welded are separated, the first object to be welded is moved in a direction orthogonal to the first direction and the second direction at a preset time interval. The amount of positional deviation with respect to the second object to be welded is repeatedly measured, the vibration waveform of the vibration of the second object to be welded relative to the first object is determined from the time course of the amount of positional deviation, and the vibration waveform is determined based on the vibration waveform. Then, the target timing at which the amount of positional deviation of the second workpiece with respect to the first workpiece becomes the target amount is estimated, and based on the estimated target timing, the first workpiece holding part and the first workpiece a control unit that controls the holding unit drive unit to move at least one of the second workpiece holding unit in the first direction to bring the second workpiece into contact with the first workpiece; Equipped with.

According to the present invention, the vibration waveform of the vibration of the second workpiece relative to the first workpiece is specified from the time course of the displacement amount of the second workpiece relative to the first workpiece, and the vibration waveform is applied to the identified vibration waveform. Based on this, a target timing at which the amount of positional deviation of the second object to be welded relative to the first object to be welded reaches the target amount is estimated. Then, the second object to be welded is brought into contact with the first object to be welded based on the estimated target timing. Thereby, even if the second object to be welded vibrates relative to the first object, the second object to be welded can be joined to the first object with high positional accuracy.

1 is a schematic configuration diagram of a bonding apparatus according to Embodiment 1 of the present invention. FIG. 2 is a schematic perspective view showing the vicinity of the stage and head according to the first embodiment. FIG. 3 is a diagram illustrating a method of finely adjusting the head according to the first embodiment. 2 is a schematic plan view of a stage and a head according to Embodiment 1. FIG. 1 is a schematic cross-sectional view of a stage and a head according to Embodiment 1. FIG. FIG. 3 is a diagram showing two alignment marks provided on one of two substrates to be joined. FIG. 3 is a diagram showing two alignment marks provided on the other of two substrates to be joined. FIG. 3 is a schematic diagram showing a photographed image of an alignment mark. FIG. 3 is a schematic diagram showing a state in which alignment marks are shifted from each other. 1 is a schematic diagram of a part of a joining apparatus according to Embodiment 1. FIG. 3 is a flowchart showing the flow of a joining method executed by the joining apparatus according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a state in which a substrate is held by a stage and a head according to the first embodiment. FIG. 3 is a diagram showing changes in the amount of positional deviation of the head with respect to the stage according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a state in which the central portions of the joint surfaces of the substrates held by the stage and head are in contact with each other according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing how substrates held by a stage and a head are brought closer to each other according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a state in which peripheral portions of joint surfaces of substrates held by a stage and a head are in contact with each other according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing how the head according to the first embodiment is removed from the stage. FIG. 3 is a diagram showing the frequency dependence of the vibration transmissibility of the pedestal according to the first embodiment. Regarding the vibration transmitted to the bonding device according to Embodiment 1, an example of the frequency spectrum of the vibration amplitude when the bonding device is placed on a stand having a vibration isolation function and when the bonding device is placed on the floor. FIG. 3 is a schematic diagram of a part of a bonding apparatus according to Comparative Example 1. FIG. It is a schematic block diagram of the chip bonding system based on Embodiment 2 of this invention. FIG. 7 is a plan view of a chip holding section according to Embodiment 2; FIG. 3 is a cross-sectional view showing a part of a chip transport device according to a second embodiment. FIG. 2 is a schematic configuration diagram of a bonding apparatus according to a second embodiment. FIG. 3 is a cross-sectional view of a head according to a second embodiment. 7 is a plan view of a head according to Embodiment 2. FIG. FIG. 7 is a diagram showing the positional relationship between the alignment mark of the chip and the hollow part of the head according to the second embodiment. FIG. 3 is a schematic perspective view showing a part of a bonding part according to a second embodiment. 17 is a cross-sectional view taken along line AA in FIG. 16 of the joining device according to Embodiment 2. FIG. FIG. 3 is a diagram showing alignment marks provided on a chip. FIG. 3 is a diagram showing alignment marks provided on a substrate. FIG. 3 is a diagram showing relative positional deviations of alignment marks. 7 is a diagram showing details of a head according to Embodiment 2. FIG. FIG. 3 is a plan view of a stage unit according to a second embodiment. FIG. 3 is a side view of a stage unit according to a second embodiment. FIG. 7 is a schematic side view showing how chips are supplied from a chip supply section in the chip bonding system according to the second embodiment. FIG. 7 is a schematic side view showing how chips are transferred from a chip transport device to a head in a chip bonding system according to a second embodiment. 7 is a flowchart illustrating an example of the flow of chip bonding processing executed by the chip bonding system according to Embodiment 2. FIG. FIG. 7 is a diagram for explaining the operation of the chip bonding system according to the second embodiment, and is a diagram showing a state in which the chip is separated from the substrate. FIG. 7 is a diagram for explaining the operation of the chip bonding system according to Embodiment 2, and is a diagram showing a state in which a chip is in contact with a substrate. FIG. 7 is a diagram for explaining the operation of the chip bonding system according to the second embodiment, and is a diagram showing how the chip is separated from the substrate. FIG. 7 is an explanatory diagram of the operation of the chip bonding system according to Comparative Example 2, and is a diagram showing how one set of two sets of alignment marks is imaged. FIG. 7 is an explanatory diagram of the operation of the chip bonding system according to Comparative Example 2, and is a diagram showing how the other group is imaged. FIG. 7 is a cross-sectional view of a head according to a modification. FIG. 7 is a plan view of a head according to a modified example. FIG. 7 is a diagram for explaining the operation of a head according to a modification. FIG. 7 is a cross-sectional view of a head according to a modification.

(Embodiment 1)
Hereinafter, a bonding apparatus according to an embodiment of the present invention will be described with reference to the drawings. The bonding apparatus according to this embodiment bonds the substrates W1 and W2 by bringing the bonding surfaces of the substrates whose bonding surfaces have been activated into contact with each other. As shown in FIG. 1, the bonding apparatus 1 according to the present embodiment includes a chamber 120, a stage 401, a head 402, a stage drive section 403, a head drive section 404, substrate heating sections 481 and 482, an imaging unit 500, and a vibration isolation device. unit 160. Here, since the vibration transmitted through the floor F and the vibration generated in the bonding apparatus are generally transmitted to at least one of the head 402 and the stage 401, the head 402 that holds the substrate W2 and the stage that holds the substrate W1 401 vibrates relatively. Therefore, the substrates held by the head 402 and the stage 401 vibrate relative to each other. On the other hand, in the bonding apparatus 1 according to the present embodiment, the amount of positional deviation between the substrates W1 and W2 due to the aforementioned vibration when bonding the substrates W1 and W2 held by the head 402 and the stage 401, respectively, is This is to reduce the impact of Examples of the substrates W1 and W2 include a Si substrate, a glass substrate, and a sapphire substrate. The bonding apparatus 1 also includes a distance measuring section 490 that measures the distance between the stage 401 and the head 402. Further, the bonding device 1 is supported by a pedestal 41 placed on the floor F at the location where the bonding device 1 is installed. The pedestal 41 has a vibration isolating function that suppresses the transmission of vibrations transmitted through the floor F to the bonding device 1, and is, for example, an earthquake-resistant pedestal provided with a grating on the vertically upper side. In the following description, the ±Z direction in FIG. 1 will be described as the vertical direction, and the XY direction will be described as the horizontal direction.

The chamber 120 maintains the area where the substrates W1 and W2 are placed at a degree of vacuum equal to or higher than a preset reference degree of vacuum. The chamber 120 is connected to a vacuum pump 121a via an exhaust pipe 121b and an exhaust valve 121c. When the exhaust valve 121c is opened and the vacuum pump 121a is operated, the gas inside the chamber 120 is exhausted to the outside of the chamber 120 through the exhaust pipe 121b, and the inside of the chamber 120 is maintained in a reduced pressure atmosphere. Moreover, the air pressure (degree of vacuum) in the chamber 120 can be adjusted by varying the opening/closing amount of the exhaust valve 121c to adjust the exhaust amount. Further, a window portion 120a is provided in a part of the chamber 120, which is used by the imaging unit 500 to measure the relative position between the substrates W1 and W2. Note that the atmospheric pressure inside the chamber 120 can be set within a range of 1 Pa or more and 1000 Pa or less.

The stage drive unit 403 is a holding unit drive unit that can move the stage 401 in the XY directions and rotate it around the Z axis. The head drive unit 404 includes an elevation drive unit 406 that moves the head 402 vertically upward or downward (see arrow AR1 in FIG. 1), an XY direction drive unit 405 that moves the head 402 in the XY directions, and an XY direction drive unit 405 that moves the head 402 in the It has a rotation drive unit 407 that rotates in the rotation direction around the Z axis (see arrow AR2 in FIG. 3). The XY direction drive unit 405 and the rotation drive unit 407 constitute a holding unit drive unit that moves the head 402 in a direction perpendicular to the vertical direction (XY direction, rotation direction around the Z axis). Further, the head driving unit 404 includes a piezo actuator 411 for adjusting the inclination of the head 402 with respect to the stage 401, and a pressure sensor 412 for measuring the pressure applied to the head 402. The XY direction drive section 405 and the rotation drive section 407 move the head 402 relative to the stage 401 in the X direction, the Y direction, and the rotation direction around the Z axis, thereby moving the substrate W1 held on the stage 401. It becomes possible to align the substrate W2 held by the head 402 with the substrate W2.

The elevating drive unit 406 moves the head 402 in the vertical direction to bring the stage 401 and the head 402 closer to each other or to move the head 402 away from the stage 401. As the lift drive unit 406 moves the head 402 vertically downward, the substrate W1 held on the stage 401 and the substrate W2 held on the head 402 come into contact. Then, in a state where the substrates W1 and W2 are in contact with each other, when the elevating drive unit 406 applies a driving force to the head 402 in a direction toward the stage 401, the substrate W2 is pressed against the substrate W1. Further, the elevating drive unit 406 is provided with a pressure sensor 408 that measures the driving force that the elevating drive unit 406 exerts on the head 402 in a direction toward the stage 401 . From the measurement value of the pressure sensor 408, the pressure acting on the joint surface of the substrates W1 and W2 when the substrate W2 is pressed against the substrate W1 by the lifting drive unit 406 can be detected. The pressure sensor 408 is composed of, for example, a load cell.

There are three piezo actuators 411 and three pressure sensors 412, as shown in FIG. 2A. The three piezo actuators 411 and the three pressure sensors 412 are arranged between the head 402 and the XY direction drive section 405. The three piezo actuators 411 are arranged at three positions on the upper surface of the head 402 that are not on the same straight line, and at three positions arranged at approximately equal intervals along the circumferential direction of the head 402 on the periphery of the upper surface of the head 402, which is approximately circular in plan view. This is an attitude adjustment unit that is fixed in position. The three pressure sensors 412 each connect the upper end of the piezo actuator 411 and the lower surface of the XY direction drive unit 405. Each of the three piezo actuators 411 can be expanded and contracted in the vertical direction. By expanding and contracting the three piezo actuators 411, the inclination of the head 402 around the X-axis and the Y-axis and the vertical position of the head 402 are finely adjusted. For example, as shown by the broken line in FIG. 2B, when the head 402 is tilted with respect to the stage 401, one of the three piezo actuators 411 is extended (see arrow AR3 in FIG. 2B) to adjust the posture of the head 402. By making fine adjustments, the lower surface of the head 402 and the upper surface of the stage 401 can be brought into a substantially parallel state. Further, the three pressure sensors 412 measure the pressing force at three positions on the lower surface of the head 402. By driving each of the three piezo actuators 411 so that the pressing forces measured by the three pressure sensors 412 are equal, the lower surface of the head 402 and the upper surface of the stage 401 are maintained substantially parallel, and the substrate W1 W2 can be brought into contact with each other.

The stage 401 and the head 402 are arranged in the chamber 120 so that they face each other in the vertical direction, and the stage 401 is located vertically below the head 402. The stage 401 is a first object holder that supports the substrate W1 on its upper surface 401a, and the head 402 is a second object holder that supports the substrate W2 on its lower surface 402a. Here, the stage 401 supports the substrate W1 with its upper surface 401a in surface contact with the entire substrate W1, and the head 402 supports the substrate W2 with its lower surface 402a in surface contact with the entire substrate W2. The stage 401 and the head 402 are made of a light-transmitting material such as a light-transmitting glass. As shown in FIGS. 3A and 3B, the stage 401 and the head 402 include electrostatic chucks 441 and 442 that hold the substrates W1 and W2, a pressing mechanism 431 that presses the center of the substrate W1, and a press mechanism 431 that presses the center of the substrate W2. A pressing mechanism 432 for pressing the portion is provided. Electrostatic chucks 441 and 442 hold the peripheral portions of substrates W1 and W2. Further, in the center of the stage 401 and the head 402, through holes 401b and 402b are provided which are circular in plan view.

The electrostatic chucks 441 and 442 are provided in a first area A1 facing the circumferences of the substrates W1 and W2 on the stage 401 and the head 402, with the substrates W1 and W2 being supported by the stage 401 and the head 402. . The electrostatic chucks 441 and 442 each have an annular shape, and have terminal electrodes disposed along the circumferential direction on the outside of the second area A2 inside the first area A1 of the stage 401 and the head 402, and the terminal electrodes arranged in a straight line. and a plurality of electrode elements electrically connected to the terminal electrode at the base end. The terminal electrode and the plurality of electrode elements are formed from a transparent conductive film containing a transparent conductive material such as ITO. The electrostatic chucks 441 and 442 attract and hold the substrates W1 and W2 while a voltage is applied by a chuck driver (not shown).

Further, the stage 401 and the head 402 are provided with recesses 401c and 402c in the second area A2, respectively. The depths of the recesses 401c and 402c are set to such a depth that the bottoms of the recesses 401c and 402c do not come into contact with the substrates W1 and W2 while holding the substrates W1 and W2, and are set to, for example, 1 μm or more.

As shown in FIG. 3B, the pressing mechanism 431 is provided at the center of the stage 401, and the pressing mechanism 432 is provided at the center of the head 402. The pressing mechanism 431 includes a pressing part 431a that can move in and out toward the head 402 through the through hole 401b of the stage 401, and a pressing driving part 431b that drives the pressing part 431a. Further, the pressing mechanism 431 includes a stopper 431c for restricting the pressing portion 431a from moving beyond a preset amount of retraction. The pressing mechanism 432 includes a pressing part 432a that can move in and out of the stage 401 side through the through hole 402b of the head 402, and a pressing driving part 432b that drives the pressing part 432a. Further, the pressing mechanism 432 includes a stopper 432c for restricting the pressing portion 432a from moving beyond a preset amount of retraction. The press drive unit 431b and the press drive unit 432b include, for example, a voice coil motor. Furthermore, the pressing section 431a and the pressing section 432a perform pressure control to maintain a constant pressure applied to the substrates W1 and W2, and position control to control to maintain a constant contact position of the substrates W1 and W2. , is done. For example, by controlling the position of the pressing part 431a and controlling the pressure of the pressing part 432a, the substrates W1 and W2 are pressed at a certain position with a certain pressure.

Returning to FIG. 1, distance measuring section 490 is, for example, a laser distance meter, and measures the distance between stage 401 and head 402 without contacting stage 401 and head 402. The distance measuring unit 490 detects the reflected light from the upper surface of the stage 401 and the lower surface of the head 402 when a laser beam is irradiated toward the stage 401 from above the head 402 formed of a light-transmitting material. The distance between the stage 401 and the head 402 is measured from the difference between the reflected light and the reflected light. As shown in FIG. 2A, the distance measuring unit 490 measures three parts P11, P12, and P13 on the upper surface of the stage 401, and three parts on the lower surface of the head 402 that are opposite to the parts P11, P12, and P13 in the Z direction. Measure the distance between sites P21, P22, and P23. As described above, since the head 402 or the stage 401 is made of a transparent material, the distance can be measured by transmitting the laser through the head 402 or the stage 401. Therefore, there is an advantage that the distance measuring section 490 can be arranged on the opposite side of the head 402 and the stage 401 from the substrates W1 and W2.

Returning to FIG. 1, the imaging unit 500 includes imaging sections 501 and 502 and mirrors 504 and 505. The imaging unit 501 and the imaging unit 502 are arranged on the opposite side of the stage 401 from the side that holds the substrate W1. The imaging unit 501 and the imaging unit 502 each have an imaging element (not shown) and a coaxial illumination system (not shown). As the light source of the coaxial illumination system, a light source that emits light (for example, infrared light) that passes through the substrates W1 and W2, the stage 401, and the window 120a provided in the chamber 120 is used.

For example, as shown in FIGS. 4A and 4B, the substrate W1 is provided with two alignment marks (first alignment marks) MK1a and MK1b, and the substrate W2 is provided with two alignment marks (second alignment marks) MK2a, MK2b is provided. The bonding apparatus 1 performs a positioning operation (alignment operation) of both substrates W1 and W2 while recognizing the positions of each alignment mark MK1a, MK1b, MK2a, and MK2b provided on the substrates W1 and W2 imaged by the imaging unit. Execute. More specifically, the bonding apparatus 1 first roughly aligns the substrates W1, W2 while recognizing the alignment marks MK1a, MK1b, MK2a, MK2b provided on the substrates W1, W2 imaged by the imaging unit 500. (Rough alignment operation) is performed to make the two substrates W1 and W2 face each other. Thereafter, the bonding apparatus 1 performs a more precise alignment operation (fine alignment operation) while simultaneously recognizing the alignment marks MK1a, MK2a, MK1b, and MK2b provided on the two substrates W1 and W2 imaged by the imaging unit 500. Execute.

Here, as shown by broken line arrows SC1 and SC2 in FIG. 1, light emitted from the light source of the coaxial illumination system of the imaging unit 501 is reflected by the mirror 504 and travels upward, and passes through the window 120a and the substrate W1, Transmits part or all of W2. The light that has passed through part or all of the substrates W1 and W2 is reflected by the alignment marks MK1a and MK2a of the substrates W1 and W2, travels downward, passes through the window 120a, is reflected by the mirror 504, and is sent to the imaging section 501. incident on the image sensor. Further, the light emitted from the light source of the coaxial illumination system of the imaging unit 502 is reflected by the mirror 505, travels upward, and passes through the window 120a and part or all of the substrates W1 and W2. The light that has passed through part or all of the substrates W1 and W2 is reflected by the alignment marks MK1a and MK2a of the substrates W1 and W2, travels downward, passes through the window 120a, is reflected by the mirror 505, and is sent to the imaging section 502. incident on the image sensor. Then, the imaging units 501 and 502 of the imaging unit 500 take images including the alignment marks MK1a and MK2a of the two substrates W1 and W2, as shown in FIGS. 5A and 5B, using the light incident on the image sensor, respectively. An image GAa and a captured image GAb including alignment marks MK1b and MK2b of the two substrates W1 and W2 are simultaneously captured within one field of view. Furthermore, the photographing operation of the photographed image GAa by the imaging section 501 and the photographing operation of the photographed image GAb by the imaging section 502 are executed simultaneously.

Returning to FIG. 1, the substrate heating units 481 and 482 are, for example, electric heaters, and are provided on the stage 401 and the head 402, respectively, as shown in FIG. 3B. The substrate heating units 481 and 482 heat the substrates W1 and W2 by transmitting heat to the substrates W1 and W2 held by the stage 401 and the head 402. Further, by adjusting the amount of heat generated by the substrate heating units 481 and 482, the temperature of the substrates W1 and W2 and their bonding surfaces can be adjusted. Further, the substrate heating sections 481 and 482 are connected to a heating section driving section (not shown), and the heating section driving section heats the substrate based on a control signal input from the control section 9 shown in FIG. By supplying current to the parts 481 and 482, the substrate heating parts 481 and 482 generate heat.

The vibration isolation unit 160 is a so-called active vibration isolation table, and collectively supports the chamber 120, the stage 401, the head 402, the stage drive section 403, the head drive section 404, the substrate heating sections 481 and 482, and the imaging unit 500. As shown in FIG. 6, the vibration isolation unit 160 includes a top plate 161, a base plate 165 disposed vertically below the top plate 161, that is, on the −Z direction side, and a vibration isolation mechanism, and is fixed to the base plate 165. and a plate support part 162 that supports the top plate 161 movably in the vertical and horizontal directions on the +Z direction side. Here, the chamber 120, the stage 401, the head 402, the stage drive section 403, the head drive section 404, the substrate heating sections 481 and 482, and the imaging unit 500 are installed vertically above the top plate 161, that is, on the +Z direction side. Ru. The plate support part 162 has a vibration isolation mechanism using, for example, an air spring, a coil spring, etc., and supports the top plate 161 so as to be movable in the vertical direction and the horizontal direction. The vibration isolation unit 160 further includes a vibration detection section 164 that detects vibrations transmitted to the top plate 161, a plate drive section 163 that moves the top plate 161 relative to the plate support section 162, and a top plate and a vibration isolation control unit 169 that controls the plate drive section 163 to reduce vibrations transmitted to the plate drive section 161. The vibration detection unit 164 detects vibrations applied to the top plate 161 in three-dimensional directions, that is, the XYZ directions. The plate drive unit 423 includes a hydraulic actuator, an electromagnetic actuator, a pneumatic actuator, a piezo actuator, a linear actuator, etc., and applies a force acting on the top plate 161 in the Z-axis direction or in the horizontal direction. The vibration isolation control unit 169 controls the plate drive unit 163 based on the vibration detected by the vibration detection unit 164 so that the top plate 161 moves so as to cancel out the vibration. The vibration isolation control unit 169 is specialized for controlling the plate drive section 163 and executes processing independently of the control section 9. This vibration isolation unit 160 removes vibration components with a frequency higher than 10 Hz that are transmitted from the floor or the like on which the bonding apparatus 1 is installed to the stage 401 or the head 402. The vibration isolation unit 160 is preferably one that can isolate vibrations in a lower frequency range, and is preferably one that removes vibration components with frequencies higher than 4 Hz, and removes vibration components with frequencies higher than 2 Hz. It is more preferable to remove vibration components of a frequency higher than 1 Hz.

Returning to FIG. 1, the control unit 9 is a control system including, for example, a personal computer, and includes a CPU (Central Processing Unit) and a memory. The memory stores programs executed by the CPU. Further, the memory stores preset positional deviation amount thresholds Δxth, Δyth, and Δθth for the relative calculated positional deviation amounts Δx, Δy, and Δθ of the substrates W1 and W2, which will be described later. The control unit 9 converts measurement signals input from the pressure sensor 412, the pressure sensor 408, and the distance measurement unit 490 into measurement information and acquires the measurement information. Further, the control unit 9 converts captured image signals inputted from the imaging unit 501 and the imaging unit 502 into captured image information and acquires the captured image information. Furthermore, the control unit 9 outputs control signals to the holding unit drive unit, piezo actuator 411, press drive unit 431b, press drive unit 432b, heating unit drive unit, stage drive unit 403, and head drive unit 404, respectively. control the behavior of

As shown in FIG. 5B, the control unit 9 determines the positional deviation amounts Δxa and Δya between the pair of alignment marks MK1a and MK2a provided on the substrates W1 and W2 based on the captured image GAa acquired from the imaging unit 501. Calculate. Note that FIG. 5B shows a state in which a pair of alignment marks MK1a and MK2a are shifted from each other. Similarly, the control unit 9 calculates the positional deviation amounts Δxb and Δyb between the other set of alignment marks MK1b and MK2b provided on the substrates W1 and W2, based on the captured image GAb acquired from the imaging unit 502. do. Thereafter, the control unit 9 controls the rotation in the X direction, Y direction, and around the Z axis based on the positional deviation amounts Δxa, Δya, Δxb, and Δyb of these two sets of alignment marks and the geometrical relationship between the two sets of marks. The relative positional deviation amounts Δx, Δy, and Δθ of the two substrates W1 and W2 in the directions are calculated. Then, the control unit 9 moves the head 402 in the X direction and the Y direction or rotates it around the Z axis so that the calculated positional deviation amounts Δx, Δy, and Δθ are reduced. This reduces the relative positional deviation amounts Δx, Δy, and Δθ between the two substrates W1 and W2. In this way, the bonding apparatus 1 performs an alignment operation that corrects the horizontal positional deviation amounts Δx, Δy, and Δθ of the two substrates W1 and W2.

Further, the control unit 9 repeatedly measures the amount of positional deviation of the substrate W2 with respect to the substrate W1 during a preset waveform measurement period with the substrates W1 and W2 separated from each other. The length of the waveform measurement period is set to a period longer than at least the vibration period of the vibration component of the vibration of the substrate W2 relative to the substrate W1. For example, if the positional deviation amount measurement process can be executed at a period of several tens of milliseconds, the control unit 9 can handle even if the vibration of the substrate W2 with respect to the substrate W1 includes a vibration component with a period of 10 Hz. However, since the accuracy increases as the number of samplings per period increases, the vibration component included in the vibration of the substrate W2 relative to the substrate W1 is preferably 5 Hz or less, more preferably 2 Hz or less. Here, since the vibration component with a period of 2 Hz is a region that cannot be removed by the pedestal 41 having a vibration isolation function, the length of the waveform measurement period during which the repeated measurement of the positional deviation amount is continued is set to, for example, 1 sec or more. It is preferable that Then, the control unit 9 repeatedly calculates the relative positional deviation amounts Δx, Δy, and Δθ of the two substrates W1 and W2 at preset time intervals shorter than the vibration period of the substrate W2 with respect to the substrate W1. Further, the control unit 9 identifies the vibration waveform of the vibration of the substrate W2 relative to the substrate W1 from the time course of the positional deviation amounts Δx, Δy, and Δθ measured during the above-mentioned waveform measurement period. Here, the control unit 9 specifies, for example, a positional deviation amount, a vibration amplitude, and a vibration period corresponding to the vibration center of the vibration waveform. Based on the identified vibration waveform, the control unit 9 estimates the target timing at which the displacement amounts Δx, Δy, and Δθ of the substrate W2 with respect to the substrate W1 become the target amounts. For example, the control unit 9 measures the positional deviation amounts Δx, Δy, and Δθ multiple times, specifies the vibration waveform of the substrate W2 relative to the substrate W1, and selects an arbitrary timing within one cycle of vibration based on the specified vibration waveform. The time required for the measured positional deviation amounts Δx, Δy, and Δθ to reach the target amounts is estimated. Further, when specifying the vibration waveform, the control unit 9 does not necessarily need to measure the maximum vibration amplitude of the positional deviation amount, but the positional deviation amounts Δx, Δy, Δθ measured at arbitrary timing within one cycle of vibration. It is only necessary to be able to estimate the time until the amount reaches the target amount. Here, the target amount is set to, for example, a positional deviation amount corresponding to the amplitude center of the vibration component of the positional deviation amounts Δx, Δy, and Δθ. Further, the target amount may be set to an amount offset by the positional deviation amount at the time of contact of the substrate W2 with respect to the substrate W1 due to the contact between the substrates W1 and W2. In this case, the relative alignment of the substrates W1 and W2 is performed so that the positional deviation amounts Δx, Δy, and Δθ become 0 when the substrates W1 and W2 are brought into contact with each other.

Further, the control unit 9 stores in the memory in advance necessary time information indicating the necessary time required to change the state in which the substrates W1 and W2 are in contact with each other from the state in which the substrates W1 and W2 are separated from each other. This required time is, for example, when the head 402 is placed in a position where the gap G1 between the substrates W1 and W2 is large enough to cause the center portions W1c and W2c to come into contact with each other simply by bending the substrates W1 and W2, and the pressing mechanism This corresponds to the time it takes to bring the central portions W1c and W2c of the substrates W1 and W2 into contact with each other by protruding the pressing portion 431a of 431 and the pressing portion 432a of the pressing mechanism 432. Then, the control unit 9 starts an operation for bringing the substrates W1 and W2 into contact with each other at a time point just the above-mentioned necessary time before the estimated target timing. Specifically, the control unit 9 controls the pressing drive unit 431b and the pressing drive unit so that the pressing unit 432a and the pressing unit 432b start the protruding operation at a time point that is the necessary time before the estimated target timing. 432b.

Further, the control unit 9 controls the distance measurement unit 490 to determine the positions P21, P22, and P23 corresponding to the positions P11, P12, and P13 in the head 402 at the three positions P11, P12, and P13 on the stage 401, respectively. Measure the distance between. Based on the distance measured by the distance measuring unit 490, the control unit 9 controls the above three positions so that the substrate W2 held by the head 402 is parallel to the substrate W1 held by the stage 401. A piezo actuator 411 is controlled.

Next, a joining method performed by the joining apparatus 1 according to the present embodiment will be described with reference to FIGS. 7 to 9. In FIG. 7, the bonding apparatus 1 uses the distance measuring unit 490 to measure the distance between the upper surface of the stage 401 and the lower surface of the head 402 when the substrates W1 and W2 are not held by the stage 401 and the head 402. It is assumed that the measurement has been completed and the results have been stored in memory. Furthermore, it is assumed that the measurement results of the thicknesses of the substrates W1 and W2 have already been stored in the memory. It is assumed that the substrates W1 and W2 are vibrating in a direction perpendicular to the vertical direction, that is, in the horizontal direction, and the imaging units 501 and 502 are vibrating in the vertical direction. Further, it is assumed that the substrates W1 and W2 are each vibrating with a vibration waveform having a frequency of 10 Hz or less or a vibration amplitude of 1 μm or less.

First, the bonding apparatus 1 causes the stage 401 to hold only the peripheral portion of the substrate W1, and causes the head 402 to hold only the peripheral portion of the substrate W2 with the bonding surfaces of the substrates W1 and W2 facing each other (step S101). . Here, for example, with the substrate W1 placed on the stage 401, the control unit 9 drives the electrostatic chuck 441 disposed in the first area A1 of the stage 401 to cause the peripheral portion of the substrate W1 to be placed on the stage 401. only be retained. Further, the control unit 9 controls a stationary station disposed in a first area A1 of the head 402 while the head 402 is in contact with a side opposite to the bonding surface side of the substrate W2 disposed vertically below the head 402. The electric chuck 442 is driven to cause the head 402 to hold only the peripheral portion of the substrate W2.

Next, the bonding apparatus 1 determines the distance between the upper surface 401a of the stage 401 and the lower surface 402a of the head 402 and the thickness of the substrates W1 and W2 when the substrates W1 and W2 are not held by the stage 401 and the head 402. Based on this, the distance between the bonding surface of the substrate W1 and the bonding surface of the substrate W2 is calculated. Then, the bonding apparatus 1 moves the head 402 vertically downward to bring the substrates W1 and W2 closer to each other (step S102).

Subsequently, the bonding apparatus 1 measures the amount of positional deviation of the substrate W1 with respect to the substrate W2 with the substrates W1 and W2 separated from each other (step S103). Here, the control section 9 first captures captured images GAa and GAb (see FIG. 5A) of the two substrates W1 and W2 in a non-contact state from the imaging section 501 and the imaging section 502 of the imaging unit 500. Then, the control unit 9 calculates the positional deviation amounts Δx, Δy, and Δθ of the two substrates W1 and W2 in the X direction, the Y direction, and the rotational direction around the Z axis, respectively, based on the two captured images GAa and GAb. . Specifically, the control unit 9 uses a vector correlation method to calculate the positional deviation amounts Δxa and Δya (see FIG. 5B) based on the captured image GAa obtained by simultaneously reading the alignment marks MK1a and MK2a spaced apart in the Z direction, for example. do. Similarly, based on the photographed image GAb obtained by simultaneously reading the alignment marks MK1b and MK2b spaced apart in the Z direction, the amounts of positional deviation Δxb and Δyb are calculated using the vector correlation method. Then, the control unit 9 calculates the horizontal displacement amounts Δx, Δy, and Δθ of the two substrates W1 and W2 based on the displacement amounts Δxa, Δya, Δxb, and Δyb.

Returning to FIG. 7, after that, the bonding apparatus 1 moves the substrate W2 relative to the substrate W1 so as to correct the calculated positional deviation amounts Δx, Δy, and Δθ. Positioning is performed (step S104). Here, the bonding apparatus 1 moves the head 402 in the X direction, the Y direction, and the rotation direction around the Z axis so that the positional deviation amounts Δx, Δy, and Δθ are eliminated while the stage 401 is fixed. Also, at this time, the bonding device 1 measures the distances between the three parts P11, P12, and P13 of the stage 401 and the parts P21, P22, and P23 corresponding to the parts P11, P12, and P13 in the head 402, respectively. Then, based on the measured distance, an attitude adjustment step is executed to adjust the attitude of the substrate W2 held by the head 402 with respect to the substrate W1 held by the stage 401.

Next, the bonding apparatus 1 moves the head 402 even closer to the stage 401 (step S105). Here, as shown in FIG. 8A, the bonding apparatus 1 moves the head 402 to such a size that the gap G1 between the substrates W1 and W2 is such that the center portions W1c and W2c come into contact with each other simply by bending the substrates W1 and W2. place in position. Next, as shown in FIG. 7, the bonding apparatus 1 repeatedly measures the amount of positional deviation of the substrate W2 with respect to the substrate W1 during a preset waveform measurement period with the substrates W1 and W2 separated from each other. A quantity measurement step is executed (step S106). The length of the waveform measurement period is set to be longer than at least the vibration period dT1 of the substrate W2 with respect to the substrate W1 shown in FIG. 8B, and is set to a time of 1 sec or more, for example. Further, the bonding apparatus 1 repeatedly measures the amount of positional deviation of the substrate W2 with respect to the substrate W1 at a preset time interval dT2 that is shorter than the vibration period dT1. In addition, in the bonding device 1, the alignment marks MK1a, MK2a and the alignment marks MK1b, MK2b are spaced apart from each other by a distance that falls within the depth of field of the imaging unit 501, the imaging unit 502, respectively. 502 are arranged at positions where the set of alignment marks MK1a and MK2a and the set of alignment marks MK1b and MK2b can be imaged, respectively. Then, in the bonding apparatus 1, the imaging unit 501 and the imaging unit 502 capture a set of corresponding alignment marks MK1a and MK2a and a set of alignment marks MK1b and MK2b in one image at the same timing at each repeated measurement timing. The imaging unit 501 and the imaging unit 502 are controlled so that images are captured simultaneously. Then, the bonding apparatus 1 calculates the amount of positional deviation of the substrate W2 with respect to the substrate W1 based on the captured images captured by the imaging units 501 and 502.

Returning to FIG. 7, after that, the bonding apparatus 1 executes a vibration waveform identification step of identifying the vibration waveform of the vibration of the substrate W2 with respect to the substrate W1 from the time transition of the amount of positional deviation measured during the waveform measurement period (step S107). Here, the bonding apparatus 1 identifies the vibration waveform of the vibration of the substrate W2 in the horizontal direction and the rotational direction with respect to the substrate W1 from the temporal change in the amount of positional deviation in the horizontal direction and the rotational direction. Then, the bonding device 1 specifies the positional deviation amounts Δx, Δy, Δθ, vibration amplitude, and vibration period corresponding to the vibration center of the vibration waveform described above.

Next, the bonding device 1 determines whether all of the positional deviation amounts Δx, Δy, and Δθ corresponding to the vibration center of the identified vibration waveform are equal to or less than preset positional deviation amount thresholds Δxth, Δyth, and Δθth. (Step S108). Here, the bonding device 1 determines that any one of the positional deviation amounts Δx, Δy, and Δθ corresponding to the vibration center of the specified vibration waveform is larger than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth. (Step S108: No). In this case, the bonding apparatus 1 performs a correction movement of the substrate W2 with respect to the substrate W1 in order to make the positional deviation amounts Δx, Δy, and Δθ corresponding to the vibration center of the identified vibration waveform all below the positional deviation amount thresholds Δxth, Δyth, and Δθth. The amount is calculated (step S109). Here, the control unit 9 calculates a corrected movement amount that moves the vibration center of the specified vibration waveform by the positional deviation amounts Δx, Δy, and Δθ in the direction opposite to the positional deviation direction.

Subsequently, the bonding apparatus 1 performs alignment so as to correct the relative positional deviation amounts Δx, Δy, and Δθ of the two substrates W1 and W2 (step S110). Here, the bonding apparatus 1 moves the head 402 in the X direction, the Y direction, and the rotation direction around the Z axis by the corrected movement amount calculated in step S109 while the stage 401 is fixed. In this way, the bonding apparatus 1 adjusts the relative position of the substrate W2 with respect to the substrate W1 so that the positional deviation amounts Δx, Δy, and Δθ become small while the substrates W1 and W2 are separated from each other. Then, the bonding apparatus 1 executes the process of step S106 again.

On the other hand, assume that the bonding apparatus 1 determines that all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S108: Yes). In this case, the bonding apparatus 1 estimates the target timing at which the amount of positional deviation of the substrate W2 with respect to the substrate W1 becomes the target amount, that is, the amount of positional deviation corresponding to the vibration center of the vibration waveform, based on the specified vibration waveform. An estimation process is executed (step S111). Here, as shown in FIG. 8B, the bonding apparatus 1 estimates the target timing Ts1c (or Ts2c) at which the positional deviation amount Δ of the substrate W2 with respect to the substrate W1 becomes the positional deviation amount Δc corresponding to the vibration center of the vibration waveform. .

Returning to FIG. 7, next, the bonding apparatus 1 bends the substrates W1 and W2 based on the estimated target timing, and brings the center portion W1c of the substrate W1 into contact with the center portion W2c of the substrate W2. The process is executed (step S112). Here, as shown in FIG. 8B, the bonding apparatus 1 performs an operation to bring the substrates W1 and W2 into contact with each other at a time point that is the above-mentioned required time dT3 before the estimated target timing Ts1c (or Ts2c). start. Here, as shown in FIG. 9A, for example, the bonding apparatus 1 bends the substrate W1 so that the central portion W1c protrudes toward the substrate W2 with respect to the peripheral portion W1s of the substrate W1. At this time, the bonding apparatus 1 causes the electrostatic chuck 441 to hold the substrate W1 by applying a voltage from the holding part driving part to the electrostatic chuck 441, and the pressing part 431a moves the center part of the substrate W1 to the substrate W2. Press towards. As a result, the substrate W1 is bent so that its central portion W1c protrudes toward the substrate W2. Then, the central portions W1c and W2c of the substrates W1 and W2 come into contact with each other. Further, the bonding apparatus 1 bends the substrate W2 so that the central portion W2c protrudes toward the substrate W1 with respect to the peripheral portion W2s of the substrate W2. At this time, the bonding apparatus 1 causes the electrostatic chuck 442 to hold the substrate W2 by applying a voltage from the holding part driving part to the electrostatic chuck 442, and the pressing part 432a pushes the center part W2c of the substrate W2 onto the substrate. Press toward W1. As a result, the substrate W2 is bent so that its central portion W2c protrudes toward the substrate W1.

Then, the bonding apparatus 1 moves the head 402 downward by the elevating drive unit 406, thereby moving the contact portions of the substrates W1, W2 from the center portions W1c, W2c of the substrates W1, W2 toward the peripheral portions W1s, W2s. Expand it. Here, with the central portions W1c and W2c of the substrates W1 and W2 facing each other and the distance between the peripheral portions W1s and W2s of the substrates W1 and W2 being maintained constant, the contact portion of the substrates W1 and W2 is Due to the intermolecular force (van der Waals force) generated between the substrates W1 and W2, it spreads from the central portions W1c and W2c of the substrates W1 and W2 toward the peripheral portions W1s and W2s. Here, the bonding apparatus 1 applies point pressure to the center portions W1c and W2c of the substrates W1 and W2 using the pressing portions 431a and 432a, with the substrates W1 and W2 separated by about 50 μm. Then, this point pressure acts as a trigger, and a so-called bonding wave is naturally applied to the periphery of the substrates W1 and W2 without applying pressure from the outside in the direction in which the substrates W1 and W2 approach each other. It spreads. Due to the bonding force between the bonding surfaces of the substrates W1 and W2, this bonding wave can be generated around the periphery of the substrates W1 and W2 without applying external pressure to the substrates W1 and W2 in a direction in which the substrates W1 and W2 approach each other. It spreads towards. Here, the bonding apparatus 1 moves the pressing part 431a in the direction of recessing into the stage 401 and moves the pressing part 432a in the direction of recessing into the head 402, as shown by arrow AR12 in FIG. 9B. At the same time, the bonding apparatus 1 moves the head 402 in a direction approaching the stage 401, as shown by an arrow AR13. Here, the pressing part driving part 431b embeds the tip of the pressing part 431a as the head 402 descends while controlling the position so that the tip part of the pressing part 431a is maintained at a preset position, and the pressing part driving part 432b By controlling the pressure applied to the portion 432a to be constant, the contact portion between the substrates W1 and W2 is maintained at the center position in the direction in which the substrates W1 and W2 face each other. Thereby, it is possible to suppress the occurrence of warpage in the substrates W1 and W2 when the substrates W1 and W2 are bonded. Then, the bonding apparatus 1 shortens the distance between the peripheral portions W1s and W2s of the substrates W1 and W2, with the central portions W1c and W2c of the substrates W1 and W2 butted against each other. Then, as shown by the arrow AR11 in FIG. 9B, the contact portion between the substrates W1 and W2 further expands from the center portions W1c and W2c of the substrates W1 and W2 toward the peripheral portions W1s and W2s. Then, the bonding apparatus 1 further widens the contact portion of the substrates W1, W2 from the central portions W1c, W2c of the substrates W1, W2 toward the peripheral portions W1s, W2s, bringing the substrates W1, W2 into contact with each other over the entire surface. Here, the bonding apparatus 1 moves the pressing part 431a in the direction of recessing into the stage 401, moves the pressing part 432a in the direction of recessing into the head 402, and at the same time moves the head 402 in the direction of approaching the stage 401. By this, the distance between the peripheral parts of the substrates W1 and W2 is reduced. In this way, as shown in FIG. 10A, the bonding apparatus 1 brings the circumferential portion of the substrate W1 into contact with the circumferential portion of the substrate W2, thereby bringing the bonding surfaces of the substrates W1 and W2 into full contact with each other.

Thereafter, the bonding apparatus 1 presses only the circumferential portion W1s of the substrate W1 against the circumferential portion W2s of the substrate W2 with the substrates W1 and W2 in contact with each other over the entire surface, thereby processing the circumferential portions W1s and W2s of the substrates W1 and W2. The substrates W1 and W2 are bonded together by pressing (step S113). Next, the bonding apparatus 1 releases the holding of the substrate W2 by stopping the electrostatic chuck 442 of the head 402 (step S114). Subsequently, the bonding apparatus 1 causes the head 402 to separate from the substrate W2 by raising the head 402, as shown by arrow AR14 in FIG. 10B.

By the way, since the bonding device 1 is placed on a pedestal 41 having a vibration isolation function, for example, as shown in FIG. 11, some of the vibration components transmitted to the floor F are transmitted to the bonding device 1. Transmitted vibrations are reduced. In addition, in FIG. 11, f indicates the frequency of vibration transmitted to the floor F, and _f0 indicates a resonance frequency specific to the pedestal 41. Further, the vertical axis indicates the vibration transmission rate of vibration transmitted from the floor F to the bonding device 1 via the pedestal 41, and the horizontal axis indicates the normalized frequency obtained by normalizing the frequency by the resonance frequency _f0 of the pedestal 41. Furthermore, f _t indicates the lower limit frequency of the frequency range in which the vibration isolation effect can be obtained by the pedestal 41. However, as shown in Fig. 11, among the vibrations transmitted to the floor F, only the vibration component whose frequency is higher than f _t has a reduced vibration transmission rate, but for vibration components whose frequency is below the lower limit frequency f _t , the vibration transmission rate is reduced. Transmission rate cannot be reduced. Here, the resonant frequency f ₀ is about 1.8 Hz in the pedestal 41 having a normal vibration isolation function, and f _t is about 2 Hz. In this case, if the vibration transmitted to the floor F includes a vibration component with a frequency of 2 Hz or less, this vibration component cannot be reduced by the pedestal 41 and the vibration isolation unit 160. In fact, as shown in FIG. 12, the frequency spectrum SPE1 when the welding device 1 is placed on the pedestal 41 having a vibration isolation function is different from the frequency spectrum SPE1 when the welding device 1 is not placed on the pedestal 41. Compared to the frequency spectrum SPE2, the vibration amplitude especially around 6 Hz has been reduced to less than 0.1 μm, but the vibration amplitude at frequencies below 2 Hz is still 0.1 μm or more, as shown in the area surrounded by the dashed line. It has become. Note that in FIG. 12, the broken line is a line indicating a vibration amplitude of 0.1 μm. Therefore, in the bonding apparatus 1 according to the present embodiment, the vibration waveform of a relatively low frequency vibration component below the lower limit frequency f _t of the frequency range in which the vibration isolation effect can be obtained by the frame 41 is specified, and the specified vibration waveform is Based on this, the target timing at which the amount of positional deviation of the substrates W1 and W2 corresponds to the center of vibration is estimated. Then, the bonding apparatus 1 causes the pressing part 431a of the pressing mechanism 431 and the pressing part 432a of the pressing mechanism 432 to protrude so that the substrates W1 and W2 come into contact with each other at the estimated target timing. This makes it possible to bring the substrates W1 and W2 into contact with each other with high positional accuracy even if the substrate W2 is vibrating with respect to the substrate W1 at a relatively low frequency below the aforementioned lower limit frequency f _t .

As described above, according to the bonding apparatus 1 according to the present embodiment, the vibration waveform of the vibration of the substrate W2 with respect to the substrate W1 is specified from the time course of the positional deviation amount of the substrate W2 with respect to the substrate W1, and the specified vibration waveform is Based on this, the target timing at which the amount of positional deviation of the substrate W2 with respect to the substrate W1 becomes the target amount is estimated. Then, the bonding apparatus 1 brings the substrates W1 and W2 into contact with each other based on the estimated target timing. Thereby, even if the substrate W2 is vibrating relative to the substrate W1, the substrate W2 can be bonded to the substrate W1 with high positional accuracy.

By the way, conventionally, a bonding method has been provided in which the substrates W1 and W2 are aligned by repeatedly contacting, separating and aligning the substrates W1 and W2, but in this bonding method, the substrate W2 is connected to the substrate W1. In contrast, when the substrates W1 and W2 vibrate relative to each other, the contact position between the substrates W1 and W2 changes depending on the timing at which the substrates W1 and W2 are brought into contact with each other. In the bonding method, the vibration waveform of the substrate W2 relative to the substrate W1 is specified, the timing for bringing the substrates W1 and W2 into contact with each other is estimated based on the specified vibration waveform, and the substrates W1 and W2 are brought into contact with each other at the estimated timing. let Therefore, it is possible to reduce the relative positional shift of the substrate W2 with respect to the substrate W1, which is caused by variations in the timing of bringing the substrates W1 and W2 into contact with each other. Therefore, there is an advantage that there is no need to repeatedly bring the substrates W1 and W2 into contact with each other and separate them from each other.

Further, according to the bonding apparatus 1 according to the present embodiment, in the first contact step described above, the substrates are arranged such that the center portion of the bonding surface of each of the substrates W1 and W2 protrudes toward the side facing each other compared to the peripheral portion. With W1 and W2 bent, the centers of the bonding surfaces of substrates W1 and W2 are brought into contact with each other. For this reason, for example, by moving the head 402 closer to the stage 402, the substrates W1 and W2 are brought into contact with each other instead of being separated from each other, compared to the case where the entire joint surfaces of the substrates W1 and W2 are brought into contact. The required time can be shortened. Therefore, there is an advantage that it is easy to bring the substrates W1 and W2 into contact with each other at the above-mentioned target timing.

Furthermore, the bonding apparatus 1 according to the present embodiment has a structure in which the three parts P11, P12, and P13 of the stage 401 are connected to the parts P21, P22, and P23 corresponding to the parts P11, P12, and P13 in the head 402, respectively. The distance is measured, and based on the measured distance, the three piezo actuators 411 described above are controlled so that the substrate W2 held by the head 402 is parallel to the substrate W1 held by the stage 401. Thereby, even if the substrates W1 and W2 are aligned after being spaced apart from each other and then bonded together, the relative positional accuracy of the substrates W1 and W2 can be improved.

Furthermore, in the bonding apparatus 1 according to the present embodiment, the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the substrates W1 and W2 are simultaneously imaged by the imaging units 501 and 502, so that the alignment marks MK1a, MK1b, MK2a, and MK2b provided on the substrates W1 and W2 are simultaneously imaged by the imaging units 501 and 502. become unaffected. In addition, in the bonding apparatus 1, the imaging units 501 and 502 are arranged corresponding to the set of alignment marks MK2a and MK1a and the set of alignment marks MK2b and MK1b, respectively, and in order to image the two sets simultaneously, the imaging unit 501 , 502 can be canceled.

By the way, in the bonding apparatus according to the present embodiment, due to the structure in which the relative positions of the head 402 and the stage 401 are aligned in the horizontal direction, the vibration amplitude in the vertical direction is relatively small, and the vibration amplitude in the direction orthogonal to the vertical direction is relatively small. The vibration amplitude tends to be relatively large. In this case, for example, as in Comparative Example 1 shown in FIG. 13, when the imaging units 501 and 502 are arranged with their optical axes perpendicular to the vertical direction, that is, along the X-axis direction, the arrow AR2 , AR24, the horizontal vibrations of the imaging units 501, 502 with relatively large vibration amplitudes affect the measurement of the amount of positional deviation between the alignment marks MK1a, MK2a and the alignment marks MK1b, MK2b. Therefore, in the configuration according to this comparative example, in addition to the horizontal vibrations of the head 402 and the stage 401 shown by arrows AR21 and AR22, the horizontal vibrations of the imaging units 501 and 502 are caused by the vibrations between the substrates W1 and W2. This will affect alignment. In contrast, the imaging units 501 and 502 according to the present embodiment are arranged with their optical axes perpendicular to the vertical direction, that is, along the X-axis direction. In this state, the imaging units 501 and 502 receive the light traveling downward from the alignment marks MK1a and MK2a and the alignment marks MK1b and MK2b through the mirror 504 that converts it into a direction perpendicular to the vertical direction. In steps 501 and 502, alignment marks MK1a, MK2a and alignment marks MK1b, MK2b are imaged. As a result, the vibration in the horizontal direction of the imaging units 501 and 502, which has a relatively large vibration amplitude, mainly affects the shift of the focus position of the imaging units 501 and 502, and the alignment mark MK1a imaged by the imaging units 501 and 502. , MK2a and the alignment marks MK1b, MK2b can be hardly affected. Therefore, it is possible to suppress the horizontal vibration of the imaging units 501 and 502, which has a relatively large vibration amplitude, from affecting the amount of positional deviation between the alignment marks MK1a and MK2a and the alignment marks MK1b and MK2b.

Furthermore, the bonding apparatus 1 according to the present embodiment includes the above-mentioned vibration isolating unit 160. This removes vibration components with frequencies higher than 10 Hz that are transmitted to the stage 401 or the head 402 from the floor or the like on which the bonding apparatus 1 is installed. Incidentally, conventionally, the vibration components transmitted to the stage 401 and the head 402 have been limited to those that can be removed using the vibration isolation unit 160, which is the above-mentioned active vibration isolation table. Therefore, vibration components of 10 Hz or less remained that could not be removed by the vibration isolation unit 160. On the other hand, in the bonding apparatus 1 according to the present embodiment, the vibration waveform of the vibration of the substrate W2 with respect to the substrate W1 is specified, and based on the specified vibration waveform, the positional deviation amount of the substrate W2 with respect to the substrate W1 is set to the target amount. By estimating the target timing at which can get. Furthermore, in the bonding apparatus 1 according to the present embodiment, the vibration speed of the vibration component in a relatively high frequency region higher than 10 Hz is faster than the image processing speed, so it is difficult to estimate the target timing based on the vibration waveform. . However, by using a vibration isolation unit 160, which is a so-called active vibration isolation table, vibration components in all frequency ranges can be reduced.

(Embodiment 2)
The chip bonding system according to this embodiment is an apparatus for bonding a semiconductor chip (hereinafter simply referred to as a "chip") onto a substrate. Semiconductor chips are supplied, for example, from diced substrates. This chip bonding system bonds the chip to the substrate by bringing the chip into contact with the substrate and applying pressure after activation processing is performed on the surface of the substrate to which the chip is bonded and the bonding surface of the electronic chip.

As shown in FIG. 14, the chip bonding system 2 according to this embodiment includes a chip supply device 2010, a bonding device 2030, a chip transport device 2039, and a control section 2009. The chip supply device 2010 cuts out one chip CP from among the plurality of chips CP produced by dicing the substrate, and supplies the chip CP to the bonding device 2030. Here, dicing is a process of cutting a substrate on which a plurality of electronic chips are built into chips in the vertical and horizontal directions. The chip supply device 2010 includes a chip supply section 2011 and a supplied chip imaging section 2015.

The chip supply unit 2011 includes a sheet holding frame 2112 that holds a sheet TE to which a plurality of chips CP are attached, a frame holding unit 2119 that holds the sheet holding frame 2112, and a frame holding unit 2119 that holds a sheet TE to which a plurality of chips CP are attached. It has a pickup mechanism 2111 that picks up the image, and a cover 2114. The chip supply unit 2011 also includes a holding frame drive unit 2113 that drives the sheet holding frame 2112 in the XY direction or in the direction of rotation around the Z axis. The frame holding unit 2119 holds the sheet holding frame 2112 in such a position that the surface of the sheet TE to which the plurality of chips CP are attached faces vertically upward (+Z direction). The sheet holding frame 2112 and the frame holding part 2119 hold the sheet TE attached to the side opposite to the bonding surface CPf side of each of the plurality of chips CP in a posture with the bonding surface CPf facing vertically upward. is configured.

The pickup mechanism 2111 separates one chip CP from the sheet TE by cutting out one of the chips CP from the opposite side of the sheet TE from the side of the chips CP. Here, the pickup mechanism 2111 cuts out the chip CP by holding a peripheral portion of the chip CP on the side opposite to the bonding surface CPf, which is different from the central portion held by a head 2033H, which will be described later. The pickup mechanism 2111 has a needle 2111a, and is movable in the vertical direction as shown by an arrow AR14. The cover 2114 is arranged to cover vertically above the plurality of chips CP, and a hole 2114a is provided in a portion facing the pickup mechanism 2111. For example, there are four needles 2111a. However, the number of needles 2111a may be three or five or more. The pickup mechanism 2111 supplies the chips CP by piercing the needle 2111a into the sheet TE from vertically below (-Z direction) and lifting the chips CP vertically upwards (+Z direction). Each chip CP attached to the sheet TE is then pushed out one by one above the cover 2114 through the hole 2114a of the cover 2114 by the needle 2111a, and delivered to the chip transport device 2039. The holding frame driving unit 2113 changes the position of the chip CP located vertically below the needle 2111a by driving the sheet holding frame 2112 in the XY direction or in the direction of rotation around the Z axis.

The supplied chip imaging unit 2015 is arranged above the chip supplying unit 2011 (in the +Z direction) in the chip supplying device 2010. The supplied chip imaging unit 2015 photographs the chip CP pushed upward from the cover 2114 by the pickup mechanism 2111.

The chip transport device 2039 transports the chip CP supplied from the chip supply section 2011 to the transfer position Pos1 where the chip CP is transferred to the head 2033H of the bonding section 2033 of the bonding device 2030. The chip transport device 2039 includes a long plate 2391, an arm 2394, a chip holding section 2393 provided at the tip of the arm 2394, and a plate driving section 2392 that rotationally drives the plate 2391. The plate 2391 has an elongated cylindrical shape and rotates around a rotation axis AX with one end extending in the vertical direction with the other end located between the chip supply section 2011 and the head 2033H as a base point. Note that the number of plates 2391 may be plural or one.

As shown in FIG. 15A, the chip holding section 2393 is provided at the tip of the arm 2394 and has two leg pieces 2393a that hold the chip CP. As shown in FIG. 15B, the plate 2391 is capable of accommodating a long arm 2394 inside. An arm driving section 2395 that drives the arm 2394 along the longitudinal direction of the plate 2391 is provided inside the plate 2391. As a result, the chip transport device 2039 can cause the tip of the arm 2394 to protrude to the outside of the plate 2391 or to make the tip of the arm 2394 retract inside the plate 2391 by the arm drive unit 2395. can do. Then, when the chip transport device 2039 rotates the plate 2391, the arm 2394 is retracted into the plate 2391 to store the chip holding section 2393 inside the plate 2391, as shown by an arrow AR15. Thereby, adhesion of particles to the chip CP during transportation is suppressed. Note that suction grooves (not shown) may be provided in the two leg pieces 2393a. In this case, since the chip CP is suctioned and held by the leg piece 2392a, the chip CP can be transported without being misaligned. Furthermore, in order to prevent the chip CP from flying out due to the centrifugal force generated when the plate 2391 rotates, a protrusion (not shown) may be provided at the tip of the leg piece 2393a. When the chip transport device 2039 receives the chip CP from the pickup mechanism 2111, it transports the chip CP in the vertical direction to a transfer position Pos1 overlapping the head 2033H by rotating the plate 2391 around the axis AX.

Further, as shown in FIG. 16, the bonding apparatus 2030 includes a stage unit 2031, a bonding section 2033 having a head 2033H, a head driving section 2036 that drives the head 2033H, imaging sections 2035a and 2035b, and an imaging section 2041. , a camera F direction drive section 2365, and a camera Z direction drive section 2363. The bonding section 2033 includes a Z-axis moving member 2331, a first disc member 2332, a piezo actuator 2333, a second disc member 2334, a mirror fixing member 2336, a mirror 2337, and a head 2033H.

A first disk member 2332 is fixed to the upper end of the Z-axis moving member 2331. Further, a second disk member 2334 is arranged above the first disk member 2332. The first disk member 2332 and the second disk member 2334 are connected via a piezo actuator 2333. Furthermore, a head 2033H is fixed to the upper surface side of the second disc member 2334. The head 2033H attracts and holds the chip CP.

The head 2033H holds the chip CP from vertically below (-Z direction). As shown in FIGS. 17A and 17B, the head 2033H includes a tip tool 2411, a head main body portion 2413, a tip support portion 2432a, and a support portion drive portion 2432b. The tip tool 2411 is made of a material (for example, silicon (Si)) that transmits photographing light (infrared light, etc.). Further, the head main body portion 2413 includes a ceramic heater, a coil heater, and the like. Further, the head main body portion 2413 is provided with hollow portions 2415 and 2416 for transmitting (passing) photographing light. Each of the hollow portions 2415 and 2416 is a transparent portion that transmits photographing light, and is provided so as to penetrate the head main body portion 2413 in the vertical direction (Z-axis direction). Moreover, each hollow part 2415, 2416 has an elliptical shape when viewed from above, as shown in FIG. The two hollow portions 2415 and 2416 are arranged point-symmetrically about the axis BX in the diagonal portions of the head main body portion 2413 having a substantially square shape when viewed from above. Note that, as shown in FIG. 16, holes 2334a and 2334b are also provided in the second disc member 2334 at portions corresponding to the hollow portions 2415 and 2416 to transmit the photographing light. Returning to FIGS. 17A and 17B, the head main body portion 2413 includes a holding mechanism 2440 having a suction portion for holding the chip CP on the chip tool 2411 by suction. The head main body 2413 also has a suction portion (not shown) for fixing the tip tool 2411 to the head main body 2413 by vacuum suction. The tip tool 2411 has a through hole 2411a formed at a position corresponding to the holding mechanism 2440 of the head body portion 2413, and a through hole 2411b into which the tip support portion 2432a is inserted.

The chip support part 2432a is, for example, a cylindrical suction post, and is provided at the tip of the head 2033H and is movable in the vertical direction. The chip support portion 2432a supports the side of the chip CP opposite to the bonding surface CPf side. For example, one chip support portion 2432a is provided at the center.

The support part driving part 2432b drives the chip support part 2432a in the vertical direction, and also removes the chip CP by reducing the pressure inside the chip support part 2432a with the chip CP placed on the tip of the chip support part 2432a. It is adsorbed to the tip of the chip support section 2432a. The support part drive part 2432b is located at the transfer position (see Pos1 in FIG. 14) to the head 2033H with the chip holding part 2393 of the chip transport device 2039 holding the chip CP, and the support part driving part 2432b is positioned at the tip of the chip support part 2432a. The chip supporting section 2432a is moved vertically upward relative to the chip holding section 2393 while supporting the central portion of the chip CP. Thereby, the chip CP is transferred from the chip holding section 2393 of the chip transport device 2039 to the head 33H.

The piezo actuator 2333 is an attitude adjustment unit that adjusts at least one of the distance between the bonding surface WTf of the substrate WT and the bonding surface CPf of the chip CP, and the inclination of the chip CP with respect to the bonding surface WTf of the substrate WT. As shown in FIG. 19A, three piezo actuators 2333 exist between the first disk member 2332 and the second disk member 2334, and can expand and contract in the respective Z directions. By controlling the degree of expansion and contraction of each of the three piezo actuators 2333, the inclination angle of the second disk member 2334 and, by extension, the head 2033H with respect to the horizontal plane is adjusted. The distance between the bonding surface CPf of the chip CP held by the head 2033H and the bonding surface WTf of the substrate WT, and the inclination of the bonding surface CPf of the chip CP held by the head 2033H with respect to the bonding surface WTf of the substrate WT. , is adjusted. Note that the three piezo actuators 2333 are arranged at positions (planar positions) where they do not block illumination light (including reflected light) regarding the imaging units 2035a and 2035b.

Returning to FIG. 16, the mirror 2337 is fixed to the first disc member 2332 via a mirror fixing member 2336, and is arranged in the gap between the first disc member 2332 and the second disc member 2334. The mirror 2337 has inclined surfaces 2337a and 2337b having an inclined downward angle of 45 degrees. Photographing light incident on the inclined surfaces 2337a, 2337b of the mirror 2337 from the imaging units 2035a, 2035b is reflected upward.

The head driving unit 2036 moves the head 2033H holding the chip CP vertically upward (+Z direction) to bring the head 2033H closer to the stage 2031 and joins the chip CP to the joining surface WTf of the substrate WT. More specifically, the head driving unit 2036 moves the head 2033H holding the chip CP vertically upward (+Z direction) to bring the head 2033H closer to the stage 2031 and brings the chip CP into contact with the bonding surface WTf of the substrate WT. surface bonding to the substrate WT. Here, the bonding surface WTf of the substrate WT and the bonding surface CPf of the chip CP that is bonded to the substrate WT have been previously subjected to activation treatment such as being exposed to plasma or irradiated with a particle beam. Therefore, by bringing the bonding surface CPf of the chip CP into contact with the bonding surface WTf of the substrate WT, the chip CP is bonded to the substrate WT. Note that the bonding surface CPf of the chip CP may be, for example, a surface in which at least a portion of a flat metal portion is exposed.

The head drive section 2036 includes a Z direction drive section 2034, a rotating member 2361, and a θ direction drive section 2037. The Z direction drive unit 2034 includes a servo motor, a ball screw, and the like. The Z-direction drive section 2034 is provided on the lower end side of a rotating member 2361, which will be described later, and drives the Z-axis moving member 2331 of the bonding section 2033 in the Z-axis direction, as shown by an arrow AR211 in FIG. When the Z-direction driving section 2034 moves the Z-axis moving member 2331 in the Z direction, the head 2033H provided at the upper end of the bonding section 2033 moves in the Z direction. That is, the head 2033H is driven in the Z direction by the Z direction drive section 2034.

The rotating member 2361 has a cylindrical shape, and the inner hollow portion has an octagonal cross-sectional shape as shown in FIG. 19B. On the other hand, the Z-axis direction moving member 2331 has a rod-shaped portion having an octagonal cross-sectional shape, and is inserted inside the rotating member 2361. Furthermore, between four of the eight side surfaces of the Z-axis moving member 2331 and the inner surface of the rotating member 2361, the Z-axis moving member 2331 slides in the Z-axis direction with respect to the rotating member 2361. A linear guide 2038 is provided which is arranged in a movable manner. The Z-axis direction moving member 2331 rotates in conjunction with the rotating member 2361 when the rotating member 2361 rotates around the axis BX. That is, the bonding portion 2033 and the rotating member 2361 rotate in conjunction with each other around the axis BX, as shown by the arrow AR212 in FIG. 14.

The θ-direction drive unit 2037 includes a servo motor, a speed reducer, and the like, and is fixed to a fixing member 2301 provided within the welding device 2030, as shown in FIG. The θ direction drive unit 2037 supports the rotating member 2361 so as to be rotatable around the axis BX. Then, the θ-direction drive unit 2037 rotates the rotating member 2361 around the axis BX in accordance with a control signal input from the control unit 2009.

The imaging units 2035a and 2035b image the alignment mark of the chip CP from vertically below the chip CP (in the -Z direction) with the chip CP disposed at a position on the substrate WT where the chip CP is bonded. The imaging section 2035a is fixed to the rotating member 2361 via a camera Z direction drive section 2363 and a camera F direction drive section 2365. The imaging section 2035b is also fixed to the rotating member 2361 via a camera Z direction drive section 2363 and a camera F direction drive section 2365. Thereby, the imaging units 2035a and 2035b rotate together with the rotating member 2361. Here, as described above, the mirror 2337 is fixed to the Z-axis moving member 2331, and the rotating member 2361 and the Z-axis moving member 2331 rotate in conjunction with each other. Therefore, since the relative positional relationship between the imaging units 2035a, 2035b and the mirror 2337 remains unchanged, the imaging light reflected by the mirror 2337 is guided to the imaging units 2035a, 2035b regardless of the rotational movement of the rotating member 2361. It will be destroyed. Further, the hollow portions 2415 and 2416 of the head 2033H rotate around the axis BX in conjunction with the rotation of the rotating member 2361. For example, as shown in FIG. 18, it is assumed that alignment marks MC2a and MC2b are provided at each corner of a square-shaped chip CP that faces each other across the center thereof. In this case, when the imaging units 2035a and 2035b are located on the diagonal line connecting the two corners where the alignment marks MC2a and MC2b of the chip CP are provided, the imaging units 35a and 35b pass through the hollow parts 415 and 416 to mark the alignment mark MC2a. , MC2b can be captured.

Returning to FIG. 16, the imaging units 2035a and 2035b each include image sensors 2351a and 2351b, optical systems 2352a and 2352b, and a coaxial illumination system (not shown). The imaging units 2035a and 2035b each take an image using reflected light of illumination light (for example, infrared light) emitted from a light source (not shown) of a coaxial illumination system. Note that the illumination light emitted in the horizontal direction from the coaxial illumination systems of the imaging units 2035a and 2035b is reflected by the inclined surfaces 2337a and 2337b of the mirror 2337, and its traveling direction is changed to vertically upward. Then, the light reflected by the mirror 2337 travels toward the photographing target portion including the chip CP held by the head 2033H and the substrate WT disposed opposite to the chip CP, and is reflected at each photographing target portion. After the reflected light from the photographing target portions of the chip CP and the substrate WT travels vertically downward, it is reflected again by the inclined surfaces 2337a and 2337b of the mirror 2337, and the direction of travel is changed to the horizontal direction, and the light is transmitted to the imaging section 2035a, It reaches 2035b. The imaging units 2035a and 2035b then use the reflected light that has reached the imaging units 2035a and 2035b to image the target portions of the chip CP and the substrate WT, respectively. In addition, when the imaging units 2035a and 2035b respectively acquire photographed images including an image of an alignment mark provided on the chip CP and an image of an alignment mark provided on the substrate WT, The image signal is output to the control unit 2009. For example, as shown in FIGS. 20A and 20B, the substrate WT is provided with two alignment marks MC1a and MC1b, and the chip CP is also provided with two alignment marks MC2a and MC2b. Then, the control unit 2009 controls, based on the captured images including the images of the alignment marks MC1a, MC1b, MC2a, and MC2b captured by the imaging units 2035a and 2035b, The relative position of each chip CP with respect to the substrate WT is recognized.

Here, as shown in FIG. 21, a part of the light that is emitted from the imaging section 2035a, reflected by the mirror 2337, and passed through the hollow part 2415 of the head 2033H is transmitted through the tip tool 2411 and the tip CP. A part of the light that has passed through the chip CP is reflected at a portion of the substrate WT where the alignment mark MC1a is provided. Further, the remaining part of the light that has passed through the hollow portion 2415 of the head 2033H is reflected at the portion of the chip CP where the alignment mark MC2a is provided. The light reflected from the portion of the substrate WT where the alignment mark MC1a is provided or the portion of the chip CP where the alignment mark MC2a is provided is transmitted through the chip tool 2411 and passes through the hollow portion 2415 of the head 2033H. These lights that have passed through the hollow portion 2415 of the head 2033H are reflected by the mirror 2337 and enter the image sensor of the image capturing section 2035a. The imaging unit 2035a then uses the light incident on the imaging element to obtain a photographed image Ga including an image of the alignment mark MC2a provided on the chip CP and an image of the alignment mark MC1a provided on the substrate WT. Then, the bonding apparatus 2030 simultaneously recognizes the set of the alignment mark MC1a of the chip CP and the alignment mark MC2a of the substrate WT by one image capture without moving the focus axis using the same imaging unit 2035a.

Furthermore, a part of the light that is emitted from the imaging section 2035b, reflected by the mirror 2337, and passed through the hollow part 2416 of the head 2033H also passes through the tip tool 2411 and the tip CP. A part of the light that has passed through the chip CP is reflected at a portion of the substrate WT where the alignment mark MC2b is provided. Further, the remaining part of the light that has passed through the hollow portion 2416 of the head 2033H is reflected at the portion of the chip CP where the alignment mark MC2b is provided. The light reflected by the portion of the substrate WT where the alignment mark MC1b is provided or the portion of the chip CP where the alignment mark MC2b is provided is transmitted through the chip tool 2411 and passes through the hollow portion 2416 of the head 2033H. These lights that have passed through the hollow section 2416 of the head 2033H are reflected by the mirror 2337 and enter the image sensor of the imaging section 2035b. Then, the imaging unit 2035b uses the light incident on the imaging element to capture a captured image including an image of the alignment mark MC2b provided on the chip CP and an image of the alignment mark MC1b provided on the substrate WT. Here, the bonding apparatus 2030 simultaneously recognizes the set of the alignment mark MC1b of the chip CP and the alignment mark MC2b of the substrate WT by one image capture without moving the focus axis using the same imaging unit 2035b.

Returning to FIG. 16, the camera F direction driving unit 2365 adjusts the focal position of the imaging units 2035a, 2035b by driving the imaging units 2035a, 2035b in the focus direction as shown by arrow AR221. The camera Z-direction driving section 2363 drives the imaging sections 2035a and 2035b in the Z-axis direction, as shown by an arrow AR222. Here, the camera Z-direction drive unit 2363 normally moves the imaging unit so that the amount of movement of the Z-axis movement member 2331 in the Z-axis direction is the same as the amount of movement of the imaging units 2035a and 2035b in the Z-axis direction. 2035a and 2035b are moved. In this way, when the head 2033H moves in the Z-axis direction, the portions to be photographed by the imaging units 2035a and 2035b do not change before and after the movement. However, when the camera Z-direction driving unit 2363 moves the imaging units 2035a and 2035b such that the amount of movement of the imaging units 2035a and 2035b in the Z-axis direction is different from the amount of movement of the Z-axis direction moving member 2331 in the Z-axis direction. There is. In this case, since the relative positions of the imaging units 2035a, 2035b and the mirror 2337 in the Z direction change, the portions of the chip CP and the substrate WT to be imaged by the imaging units 2035a, 2035b are changed.

The stage unit 2031 includes a stage 2315 that holds the substrate WT in a posture in which the bonding surface WTf of the substrate WT to which the chip CP is bonded faces vertically downward (-Z direction), and a stage drive section 2320 that drives the stage 2315. have The stage 2315 is a substrate holder that can move in the X direction, Y direction, and rotational direction. Thereby, the relative positional relationship between the bonding part 2033 and the stage 2315 can be changed, and the bonding position of each chip CP on the substrate WT can be adjusted.

The stage drive unit 2320 is a substrate holder drive unit that includes an X-direction moving unit 2311, a Y-direction moving unit 2313, an X-direction drive unit 2321, and a Y-direction drive unit 2323, as shown in FIGS. 22A and 22B. The X-direction moving section 2311 is fixed to the base member 2302 of the bonding device 2030 via two X-direction driving sections 2321. The two X-direction drive units 2321 each extend in the X-direction and are spaced apart from each other in the Y-direction. The X-direction drive section 2321 has a linear motor and a slide rail, and moves the X-direction moving section 2311 in the X direction relative to the fixed member 2301. The Y-direction moving section 2313 is arranged below the X-direction moving section 2311 (-Z direction) via two Y-direction driving sections 2323. The two Y-direction drive units 2323 each extend in the Y-direction and are spaced apart from each other in the X-direction. The Y-direction drive section 2323 has a linear motor and a slide rail, and moves the Y-direction moving section 2313 in the Y direction relative to the X-direction moving section 2311. The stage 2315 is fixed to the Y-direction moving section 2313.

The stage 2315 moves in the X direction and the Y direction in accordance with the movements of the X direction drive section 2321 and the Y direction drive section 2323. Further, an opening 2312 having a rectangular shape in plan view is provided at the center of the X-direction moving section 2311, and an opening 2314 having a rectangular shape in plan view is also provided at the center of the Y-direction moving section 2313. An opening 2316 that is circular in plan view is provided in the center of the stage 2315. Then, the marks on the substrate WT are recognized by the imaging unit 2041 through these openings 2312, 2314, and 2316. Note that an infrared ray irradiation unit (not shown) may be arranged to irradiate the substrate WT with infrared rays to heat the substrate WT.

The imaging unit 2041 is, for example, an infrared camera, and is arranged above the stage 2315, as shown in FIGS. 14 and 16. The imaging unit 2041 then detects the alignment marks (MC1a, MC1b in FIG. ). Further, the imaging unit 2041 generates a photographed image signal indicating a photographed image including an image of the alignment mark of the substrate WT, and outputs it to the control unit 2009. Based on the captured image captured by the imaging unit 2041, the control unit 2009 recognizes the relative position of the bonding position of the chip CP with respect to the head 2033H in a direction parallel to the surface of the substrate WT to which the chip CP is bonded. The imaging unit 2041 includes an image sensor 2418, an optical system 2419, and a coaxial illumination system (not shown). The imaging unit 2041 captures an image using reflected light of illumination light (for example, infrared light) emitted from a light source (not shown) of a coaxial illumination system.

The control unit 2009 is a control system including, for example, a personal computer, and includes a CPU and memory. The memory stores programs executed by the CPU. The memory also stores information indicating a first distance and a second distance, which will be described later. The control unit 2009 includes a supply chip imaging unit 2015, imaging units 2035a and 2035b, an imaging unit 2041, a Z direction drive unit 2034, a θ direction drive unit 2037, a piezo actuator 2333, a support unit drive unit 2432b, an X direction drive unit 2321, and a Y direction drive unit 2037. It is connected to the direction drive section 2323, the plate drive section 2392, the arm drive section 2395, the pickup mechanism 2111, and the holding frame drive section 2113. The control unit 2009 converts captured image signals input from the supplied chip imaging unit 2015, imaging units 2035a, 2035b, and imaging unit 2041 into captured image information and acquires the captured image information. Furthermore, by executing the program stored in the memory, the control unit 2009 controls the Z-direction drive unit 2034, the θ-direction drive unit 2037, the piezo actuator 2333, the support unit drive unit 2432b, the X-direction drive unit 2321, and the Y-direction drive unit. 2323, plate drive section 2392, arm drive section 2395, pickup mechanism 2111, and holding frame drive section 2113 by outputting control signals to each of these operations.

The control unit 2009 calculates the relative position error between the substrate WT and the chip CP from the photographed images of the alignment marks MC1a, MC1b, MC2a, and MC2b while the substrate WT and the chip CP are in contact with each other. For example, as shown in FIG. 20C, the control unit 2009 recognizes the positions of a pair of alignment marks MC1a and MC2a provided on the chip CP and the substrate WT based on the photographed image Ga, and uses the vector correlation method to identify the positions of the alignment marks MC1a and MC2a. , MC2a are calculated. Further, as described above, the control unit 2009 controls the chip CP and the substrate WT based on the captured image including the image of the alignment mark MC2b provided on the chip CP and the image of the alignment mark MC1b provided on the substrate WT. The positions of the provided set of alignment marks MC1b and MC2b are recognized, and the amounts of positional deviation Δxb and Δyb between the alignment marks MC1b and MC2b are calculated by the vector correlation method. Then, the control unit 90 calculates the horizontal displacement amounts Δx, Δy, and Δθ of the chip CP with respect to the substrate WT based on the displacement amounts Δxa, Δya, Δxb, and Δyb. Then, the control unit 2009 causes the Z-direction drive unit 2034 and the θ-direction drive unit 2037 of the head drive unit 2036 and the X-direction drive unit 2321 and Y-direction drive unit 2323 of the stage 2031 to move the substrate. The position and orientation of the chip CP with respect to the WT are corrected. Further, the control unit 2009 causes the holding frame driving unit 2113 to correct the position and tilt of the sheet holding frame 2112 around the Z-axis according to the position and orientation of the chip CP cut out by the pickup mechanism 2111. Here, the control unit 2009 recognizes the position and orientation of the chip CP based on the captured image captured by the supplied chip imaging unit 2015.

Next, the operation of the chip bonding system 2 according to this embodiment will be explained with reference to FIGS. 23 to 25. This chip bonding system 2 is one that successively bonds a plurality of chips CP to one substrate WT, for example, and the plurality of chips CP are sequentially supplied from a chip supply device 2010 to a bonding device 2030. First, in the chip bonding system 2, the chip transport device 2039 directs the plate 2391 toward the chip supply section 2011 side. Next, the chip supply device 2010 moves the pickup mechanism 2111 vertically upward to cut out one chip CP from the side opposite to the plurality of chips CP in the sheet TE, and removes the one chip CP from the sheet TE. state. In this state, the chip transport device 2039 causes the arm 2394 to protrude from the plate 2391. At this time, the needle 2111a of the pickup mechanism 2111 is placed between the two leg pieces 2393a of the chip holding part 2393, and the cut out chip CP is placed vertically above the chip holding part 2393, as shown in FIG. 23A. The state will be as follows. Then, the chip supply device 2010 transfers the chip CP from the pickup mechanism 2111 to the chip holding section 2393 by moving the pickup mechanism 2111 vertically downward.

Subsequently, the chip transport device 2039 rotates the plate 2391 to place the chip holding section 2393 at the tip of the arm 2394 of the plate 2391 at the transfer position Pos1 vertically above the head 2033H of the bonding section 2033. That is, the chip transport device 2039 transports the chip CP received from the chip supply device 2010 to the transfer position Pos1 where the chip CP is transferred to the head 2033H. Then, the head driving section 2036 of the bonding device 2030 moves the bonding section 2033 vertically upward to bring the head 2033H closer to the chip holding section 2393 of the chip transporting device 2039. Next, the support part driving part 2432b moves the chip support part 2432a vertically upward. As a result, the chip CP held by the chip holding part 2393 is placed vertically above the chip holding part 2393 while being supported by the upper end of the chip supporting part 2432a, as shown in FIG. 23B. Subsequently, the chip transfer device 2039 causes the arm 2394 to sink into the plate 2391. After that, the support part driving part 2432b moves the chip support part 2432a vertically downward. As a result, the chip CP is held at the tip of the head 2033H. At this time, the distance between the alignment marks MC2a, MC2b of the chip CP and the alignment marks MC1a, MC1b of the substrate WT is longer than a preset first distance that falls within the depth of field of the imaging units 2035a, 2035b. are also spaced apart by a long second distance. Then, as the chip supply device 2010 and the chip transport device 2039 repeat the above-described operations, a plurality of chips CP are sequentially supplied to the bonding device 2030.

Next, the bonding device 2030 bonds the chip CP to the substrate WT. Here, a bonding method in which the bonding apparatus 2030 bonds the chip CP to the substrate WT will be described with reference to FIGS. 24 and 25. Note that the substrate WT and the chip CP are respectively indicated by arrows AR2011 in FIG. As shown in AR2012, the imaging units 2035a and 2035b vibrate in the vertical direction and in the direction perpendicular to the vertical direction, but this does not affect the measurement of the amount of positional deviation. is vibration in the vertical direction shown by arrow AR2013. Further, it is assumed that the substrate WT and the chip CP each vibrate with a vibration waveform having a frequency of 10 Hz or less or a vibration amplitude of 1 μm or less. First, as shown in FIG. 24, the bonding apparatus 2030 measures the amount of relative positional deviation between the substrate WT and the chip CP (step S201). Here, the bonding device 2030 transfers the chip CP from the chip transport device 39 to the head 33H, and in a state where the chip CP and the substrate WT are separated by the aforementioned second distance, the bonding device 2030 aligns the alignment marks MC2a and MC2b of the chip CP. Alignment marks MC1a and MC1b on the substrate WT are imaged. Here, the imaging units 2035a and 2035b image the alignment marks MC2a and MC2b on the chip CP, and the imaging unit 2041 images the alignment marks MC1a and MC1b on the substrate WT. That is, the imaging units 2035a, 2035b and the imaging unit 2041 image the alignment marks MC2a, MC2b of the chip CP and the alignment marks MC1a, MC1b of the substrate WT, respectively. Then, the bonding device 2030 determines the relative relationship between the substrate WT and the chip CP based on the photographed images of the alignment marks MC1a and MC1b and the photographed images of the alignment marks MC2a and MC2b respectively taken by the imaging sections 2035a and 2035b and the imaging section 2041. The amount of positional deviation is measured (step S201).

Next, the bonding apparatus 2030 aligns the chip CP with respect to the substrate WT by moving the stage 2315 in the horizontal direction with respect to the head 2033H so as to eliminate the measured positional deviation amount (step S202). . Here, the bonding device 2030 moves the stage 2315 in the X direction, the Y direction, and the rotation direction around the Z axis so that the positional deviation amounts Δx, Δy, and Δθ are eliminated while the head 2033H is fixed. That is, the bonding device 2030 moves the chip CP relatively to the substrate WT in a horizontal direction, that is, in a direction parallel to the bonding surface WTf, based on the calculated positional shift amount.

Subsequently, the bonding device 2030 moves the head 2033H holding the chip CP vertically upward to bring the chip CP even closer to the substrate WT (step S203). At this time, as shown in FIG. 25A, the bonding apparatus 2030 determines that the distance between the alignment marks MC2a, MC2b of the chip CP and the alignment marks MC1a, MC1b of the substrate WT is equal to the depth of field of the imaging units 2035a, 2035b. The chip CP is brought close to the substrate WT until the chip CP is separated by a preset first distance G2 that falls within the range. Here, the first distance G2 is set, for example, to a distance in the range of 10 μm to 100 μm.

Thereafter, the bonding device 2030 repeatedly measures the amount of positional deviation of the chip CP with respect to the substrate WT during a preset waveform measurement period while the chip CP and the substrate WT are separated from each other by the first distance G2. A measurement process is executed (step S204). The length of the waveform measurement period is set to be longer than at least the vibration period of the chip CP with respect to the substrate WT, and is set to be, for example, 1 sec or more. Furthermore, the bonding device 2030 repeatedly measures the amount of positional deviation at preset time intervals shorter than the vibration period of the chip CP with respect to the substrate WT. In addition, in the bonding device 2030, the alignment marks MC1a, MC2a and the alignment marks MC1b, MC2b are spaced apart by a distance G2 that falls within the depth of field of the imaging units 2035a, 2035b, and the imaging units 2035a, 2035b The alignment marks MC1a and MC2a and the alignment marks MC1b and MC2b are respectively placed at positions where they can be imaged. Then, in the bonding apparatus 1, the imaging units 2035a and 2035b capture images of the corresponding set of alignment marks MC1a and MC2a and the set of alignment marks MC1b and MC2b at the same timing at each repeated measurement timing. The imaging units 2035a and 2035b are controlled to capture images at the same time. Then, the bonding apparatus 2030 calculates the amount of positional deviation of the substrate W2 with respect to the substrate W1 based on the captured images captured by the imaging units 2035a and 2035b. Here, the bonding device 2030 calculates a positional deviation amount WD1 of the alignment mark MC1a with respect to the alignment mark MC2a or a positional deviation amount WD2 of the alignment mark MC1b with respect to the alignment mark MC2b, as shown in FIG. 25B, for example.

Returning to FIG. 24, next, the bonding apparatus 2030 executes a vibration waveform identification step of identifying the vibration waveform of the vibration of the chip CP relative to the substrate WT from the time transition of the amount of positional deviation measured during the waveform measurement period ( Step S205). Here, the bonding device 2030 identifies the vibration waveforms of the vibrations of the chip CP in the horizontal direction and the rotational direction relative to the substrate WT from the temporal change in the amount of positional deviation in the horizontal direction and the rotational direction. Then, the bonding device 2030 specifies the positional deviation amounts Δx, Δy, Δθ, vibration amplitude, and vibration period corresponding to the vibration center of the vibration waveform described above.

Next, the bonding device 2030 determines whether all of the positional deviation amounts Δx, Δy, and Δθ corresponding to the vibration center of the identified vibration waveform are equal to or less than preset positional deviation amount thresholds Δxth, Δyth, and Δθth. (Step S206). Here, the bonding device 2030 determines that any one of the positional deviation amounts Δx, Δy, and Δθ corresponding to the vibration center of the specified vibration waveform is larger than the preset positional deviation amount thresholds Δxth, Δyth, and Δθth. (Step S206: No). In this case, the bonding device 2030 performs a correction movement of the chip P with respect to the substrate WT in order to make the positional deviation amounts Δx, Δy, and Δθ corresponding to the vibration center of the identified vibration waveform all below the positional deviation amount thresholds Δxth, Δyth, and Δθth. The amount is calculated (step S207). Here, the control unit 2009 calculates a corrected movement amount that moves the vibration center of the identified vibration waveform by the positional deviation amounts Δx, Δy, and Δθ in the direction opposite to the positional deviation direction.

Subsequently, the bonding apparatus 2030 performs alignment so as to correct the relative positional deviation amounts Δx, Δy, and Δθ of the chip CP with respect to the substrate WT (step S208). Here, the bonding apparatus 2030 moves the head 2033H in the X direction, the Y direction, and the rotational direction around the Z axis by the corrected movement amount calculated in step S207 while the position of the substrate WT is fixed. In this way, the bonding device 2030 adjusts the relative position of the chip CP with respect to the substrate WT so that the positional deviation amounts Δx, Δy, and Δθ become small while the chip CP and the substrate WT are separated from each other. Then, the bonding device 2030 executes the process of step S204 again.

On the other hand, assume that the bonding apparatus 2030 determines in step S206 that all of the calculated positional deviation amounts Δx, Δy, and Δθ are equal to or less than preset positional deviation amount thresholds Δxth, Δyth, and Δθth (step S206: Yes). In this case, the bonding device 2030 estimates the target timing at which the amount of positional deviation of the chip CP with respect to the substrate WT becomes the target amount, that is, the amount of positional deviation corresponding to the vibration center of the vibration waveform, based on the specified vibration waveform. An estimation process is executed (step S209). Here, the bonding device 2030 estimates the target timing at which the amount of positional deviation of the chip CP with respect to the substrate WT corresponds to the vibration center of the vibration waveform.

After that, the bonding apparatus 2030 executes a contact process of bringing the chip CP into contact with the substrate WT based on the estimated target timing (step S210). Next, the bonding device 2030 executes a bonding process of bonding the chip CP to the substrate WT by pressing the chip CP directly onto the substrate WT (step S211).

Next, after moving the head 33H vertically downward, the chip bonding system 2 captures an image including at least the alignment marks MC2a and MC2b using the imaging unit 2041, thereby determining whether the chip CP is bonded to the substrate WT. (Step S212). Here, the bonding device 2030 determines that the chip CP is bonded to the substrate WT when the captured image captured by the imaging unit 2041 includes alignment marks MC1a and MC1b as well as alignment marks MC2a and MC2b. On the other hand, if the alignment marks MC1a and MC1b are not included in the captured image captured by the imaging unit 2041, the bonding device 2030 determines that the chip CP is not bonded to the substrate WT. When the bonding apparatus 2030 determines that the chip CP is bonded to the substrate WT (step S212: Yes), the bonding apparatus 2030 directly proceeds to the process of bonding the next chip CP to the substrate WT.

On the other hand, assume that the bonding apparatus 2030 determines that the chip CP is not bonded to the substrate WT (step S212: No). In this case, the bonding device 2030 determines the holding state of the chip CP by the head 2033H based on whether the alignment marks MC2a, MC2b are included in the captured images captured by the imaging units 2035a, 2035b (step S213). Here, the bonding device 2030 determines that the chip CP is held by the head 2033H when the alignment marks MC2a and MC2b are included in the captured images captured by the imaging units 2035a and 2035b. On the other hand, if the alignment marks MC2a and MC2b are not included in the captured images captured by the imaging units 2035a and 2035b, the bonding device 2030 determines that the chip CP is not held by the head 2033H. After determining the state in which the chip CP is held by the head 33H, the bonding apparatus 2030 moves to a process of bonding the next chip CP to the substrate WT.

Further, when the bonding device 2030 determines that the chip CP is not bonded to the substrate WT and the chip CP is held by the head 2033H, the chip bonding system 2 re-bonds the chip CP held by the head 2033H. The chip is transferred to the chip holding section 2393 of the chip transport device 2039. Thereafter, the chip bonding system 2 rotates the plate 2391 to place the chip holding section 2393 vertically above the chip collecting section (not shown). Then, the chip bonding system 2 causes the chip collecting section to collect the chip CP held by the chip holding section 2393. Thereafter, a series of operations from steps S201 to S213 are repeatedly executed every time a new chip CP is transferred from the chip transport device 2039 to the bonding device 2030.

Here, the bonding device 2030 causes particles generated when bonding the chip CP to the substrate WT to fall vertically downward, and also moves the stage 2315 holding the substrate WT to the stage 2315 on which each of the plurality of chips CP on the substrate WT is mounted. A plurality of chips CP are successively joined by sequentially moving the parts so that they are arranged vertically above the chip CP held by the head 2033H.

As explained above, according to the chip bonding system 2 according to the present embodiment, the vibration waveform of the vibration of the chip CP with respect to the substrate WT is specified from the time transition of the amount of positional deviation of the chip CP with respect to the substrate WT, and the specified vibration Based on the waveform, a target timing at which the amount of positional deviation of the chip CP with respect to the substrate WT reaches the target amount is estimated. Then, the chip bonding system 2 brings the chip CP into contact with the substrate WT based on the estimated target timing. Thereby, even if the chip CP vibrates at a relatively low frequency relative to the substrate WT, the chip CP can be bonded to the substrate WT with high positional accuracy.

Further, according to the chip bonding system 2 according to the present embodiment, the alignment marks MC1a, MC1b and the alignment marks MC2a, MC2b are separated by the first distance G1 that falls within the depth of field of the imaging units 2035a, 2035b. In this state, the alignment marks MC1a, MC1b, MC2a, and MC2b are simultaneously imaged by the imaging units 2035a and 2035b. Then, the chip bonding system 2 calculates the relative positional shift amount between the substrate WT and the chip CP from the captured images of the alignment marks MC1a, MC1b, MC2a, and MC2b captured by the imaging units 2035a and 2035b. As a result, the calculated amount of positional deviation of the position of the alignment marks MC1a, MC1b, MC2a, MC2b due to vibration of the imaging units 2035a, 2035b and changes in position over time, or changes over time in the positions of alignment marks MC1a, MC1b, MC2a, MC2b due to thermal expansion of the substrate WT and chip CP. The impact of Therefore, the chip CP can be bonded to the substrate WT with high positional accuracy.

By the way, conventionally, as in the chip bonding system according to Comparative Example 2 shown in FIGS. 26A and 26B, an imaging unit 9035a and an imaging unit 9035a for imaging the alignment marks MC2a and MC2b provided on the chip CP disposed vertically upward. , and an imaging unit 9035b for imaging alignment marks MC1a and MC1b provided on the substrate WT arranged vertically downward, and a mirror 9337 is moved in the horizontal direction between the chip CP and the substrate WT. However, it has been common to sequentially image the set of alignment marks MC2a and MC1a and the set of alignment marks MC2b and MC1b. First, the mirror 9337 is placed at the position shown in FIG. 26A to image the set of alignment marks MC2a and MC1a, and then the mirror 9337 is moved as shown by arrow AR900 in FIG. 26B, and then the set of alignment marks MC2b and MC1b is imaged. Take an image. However, in the case of the chip bonding system according to this comparative example, the relative positions between the two imaging units 9035a and 9035b may shift due to thermal expansion or changes over time. In this case, the alignment accuracy between the chip CP and the substrate WT deteriorates, and it becomes necessary to calibrate the positions of the imaging units 9035a and 9035b. Furthermore, during the daily operation of the chip bonding system, there is a possibility that the operating state may become unstable and the positions of the imaging units 9035a and 9035b may change. In addition, in the chip bonding system according to the comparative example, since the set of alignment marks MC2a, MC1a and the set of alignment marks MC2b, MC1b are sequentially imaged while moving the mirror 9337, the set of alignment marks MC2a, MC1a and the set of alignment marks MC2a, MC1a are imaged in order. A time difference occurs in the timing of imaging the set of marks MC2b and MC1b, and vibrations of the imaging units 9035a and 9035b affect the calculated positional shift amount.

In contrast, in the chip bonding system 2 according to the present embodiment, a set of alignment mark MC2a (MC2b) provided on the chip CP and alignment mark MC1a (MC1b) provided on the substrate WT is integrated into one imaging unit. 35a (35b) simultaneously, it is not affected by the positional shift of the imaging section 35a (35b). In addition, in the chip bonding system 2, the imaging units 35a and 35b are arranged corresponding to the set of alignment marks MC2a and MC1a and the set of alignment marks MC2b and MC1b, respectively, and the imaging units The influence of vibrations of 35a and 35b can be canceled.

In addition, in the case of the chip bonding system according to the comparative example, since the set of alignment marks MC2a and MC1a and the set of alignment marks MC2b and MC1b are imaged at different timings, when the chip CP and the substrate WT are vibrating, An error occurs due to a timing shift. In contrast, in the chip bonding system 2, the two imaging units 35a and 35b simultaneously image the set of alignment marks MC2a and MC1a and the set of alignment marks MC2b and MC1b. For this reason, there is an advantage that errors due to deviations in timing of imaging unlike the chip bonding system according to the comparative example do not occur.

Further, with the above-described configuration, it is not possible to correct the positional deviation of the chip CP with respect to the substrate WT when the chip CP is bonded to the substrate WT. On the other hand, in the chip mounting system according to the present embodiment, the chip CP and the substrate WT are heated using infrared rays to a temperature at which the chip CP and the substrate WT are bonded, and the chip CP and the substrate WT are thermally expanded. Since it is possible to calculate the amount of positional deviation between the chip CP and the substrate WT, it is possible to always accurately calculate the amount of positional deviation and correct the positional deviation of the chip CP with respect to the substrate WT, regardless of the states of the chip CP and the substrate WT.

By the way, in the case where the head 2033H holding the chip CP approaches the substrate WT from vertically above to join the chip CP to the substrate WT, particles generated from the chip CP at the time of joining may be scattered around the chip CP to be joined on the substrate WT. I end up falling. In this case, when a plurality of chips CP are successively bonded around each other as described above, the next and subsequent chips CP are bonded to the area where the particles have fallen, and particles are formed between the chip CP and the substrate WT. There is a risk that they will get stuck and cause voids or poor bonding. In contrast, in the bonding apparatus 2030 according to the present embodiment, particles generated during bonding of the chips CP fall vertically downward from the chips CP and do not adhere to the bonding surface of the substrate WT. For this reason, when a plurality of chips CP are successively bonded around each other as described above, a clean area to which particles are not attached around the chip CP bonded to the substrate WT on the bonding surface of the substrate WT is chips CP can be joined. Therefore, it is possible to suppress the generation of voids between the chip CP and the substrate WT, and to bond the chip CP to the substrate WT well.

In addition, if the chip CP shifts from its original bonding position to the bonding position of the next chip CP to be bonded, it may interfere with the shifted chip CP while moving the next chip CP at high speed to the position before applying pressure. It may be stored away. In this case, the substrate may break. If this happens, all the chips CP bonded to the substrate WT up to that point will be wasted, which is a big problem. In contrast, in the chip bonding system 2 according to the present embodiment, the stage 2315 of the bonding apparatus 2030 holds the substrate WT in a posture such that the bonding surface WTf of the substrate WT faces vertically downward. As a result, if, for example, an attempt is made to bond the chip CP to the substrate WT, but the chip CP is not bonded to the substrate WT, the chip CP separates from the substrate WT as the head 2033H moves vertically downward. Therefore, the chip CP remaining on the bonding surface WTf of the substrate WT without being bonded is blown to a location where another chip CP is bonded, and interferes with the other chip CP when bonding the other chip CP to the substrate WT. You can prevent it from happening.

Further, in the chip bonding system 2 according to the present embodiment, after the process of bonding the chip CP to the substrate is completed, the captured image captured by the imaging unit 2041 includes alignment marks MC2a and MC2b as well as alignment marks MC1a and MC1b. Depending on whether or not the chip CP is bonded to the substrate WT, it is determined whether or not the chip CP is bonded to the substrate WT. Furthermore, after the process of bonding the chip CP to the substrate WT is completed, the chip bonding system 2 determines whether or not the alignment marks MC2a and MC2b are included in the captured images captured by the imaging units 2035a and 2035b. It is determined whether the CP is held by the head 2033H. Thereby, when it is determined that the chip CP that could not be bonded to the substrate WT is held by the head 2033H, the chip CP can be collected.

Although each embodiment of the present invention has been described above, the present invention is not limited to the configuration of the above-described embodiments. For example, if the stage 401 and the head 402 do not have the pressing mechanisms 431 and 432, the head 402 holding the substrate W2 is brought close to the stage 401 holding the substrate W1, and the substrates W1 and W2 are moved as they are at the target timing described above. The entire joint surfaces of the two may be brought into surface contact with each other.

By the way, in the first embodiment, after the first contact step of bringing the central portions of the substrates W1 and W2 into contact with each other, the bonding wave spreads toward the peripheral portions of the substrates W1 and W2 in the second contact step, and the bonding waves spread toward the peripheral portions of the substrates W1 and W2. Until the bonding surfaces of W2 come into full surface contact with each other, some vibration of the substrate W2 with respect to the substrate W1 may remain. In contrast, according to this modification, the bonding apparatus can stop the vibration of the substrate W2 relative to the substrate W1 when the bonding surfaces of the substrates W1 and W2 are brought into surface contact with each other at the above-mentioned target timing. Therefore, by appropriately adjusting the time from when the joint surfaces of the substrates W1 and W2 are separated to when they are in surface contact at which vibration stops, the influence of vibration on the amount of displacement of the substrate W2 with respect to the substrate W1 can be reduced. In some cases, it may be possible to further reduce Note that when the bonding surfaces of the substrates W1 and W2, which have a relatively large area, are brought into surface contact with each other over the entire surface, the substrates W1 and W2 are brought into contact and pressurized in a relatively short period of time. Distortion may occur at the joints. Therefore, as described in Embodiment 1, after the central portions of the substrates W1 and W2 are brought into contact with each other to stop the vibration of the substrate W2 relative to the substrate W1, the bonding wave naturally spreads to the peripheral portions of the substrates W1 and W2. It is preferable to take a long time to contact and bond the entire surface. On the other hand, when a chip CP having a relatively small area is brought into surface contact with the substrate WT, the entire bonding surface of the chip CP comes into contact with the substrate WT at approximately the same time, and the area is also relatively small, so that the distortion is small. Therefore, a configuration may be adopted in which the chip CP is brought into surface contact with the substrate WT.

In the first embodiment, the bonding apparatus 1 images at least one set of alignment marks MK1a, MK2a provided on the substrate W1 and alignment marks MK1b, MK2b provided on the substrate W2, and detects the vibration waveforms thereof. The positional deviation amounts Δx, Δy, and Δθ corresponding to the center of vibration are specified, and when these become target values, the substrates W1 and W2 are brought into contact with each other. Further, a vibration waveform identification step in which the bonding apparatus 1 identifies the positional deviation amount Δx, Δy, Δθ, vibration amplitude, and vibration period corresponding to the vibration center of the vibration waveform of the vibration of the substrate W2 in the horizontal direction and the rotational direction with respect to the substrate W1. We have explained an example of executing . However, the present invention is not limited to this, and instead of the vibration waveform identification process, the bonding apparatus 1 may generate an intermediate positional deviation amount corresponding to the intermediate value of each of the plurality of positional deviation amounts Δx, Δy, and Δθ measured in the positional deviation amount measuring process instead of the vibration waveform identification process. It may be determined whether or not all of the calculated positional deviation amount intermediate values are equal to or less than the positional deviation amount thresholds Δxth, Δyth, and Δθth. In this case, when the bonding device 1 determines that all of the calculated positional deviation amount intermediate values are equal to or less than the positional deviation amount thresholds Δxth, Δyth, and Δθth, the welding apparatus 1 executes the vibration waveform identification step described above to identify the vibration waveform. After that, the timing estimation step described above may be executed.

In the second embodiment, the bonding apparatus 2030 also includes positional deviation amounts Δx, Δy, Δθ corresponding to the vibration center of the vibration waveform of the horizontal and rotational vibrations of the chip CP relative to the substrate WT, vibration amplitude, and An example of specifying the vibration period has been explained. However, the present invention is not limited to this, and the bonding device 2030 calculates an intermediate value of the positional deviation amount corresponding to the intermediate value of each of the plurality of positional deviation amounts Δx, Δy, and Δθ measured in the positional deviation amount measuring step, and calculates the calculated positional deviation. It may be determined whether all of the intermediate values are equal to or less than the positional deviation amount thresholds Δxth, Δyth, and Δθth.

In the first embodiment, the bonding apparatus 1 measures the alignment marks MK1a, MK2a and the alignment marks MK1b, MK2b during a preset waveform measurement period with the substrates W1 and W2 spaced apart from each other in the positional deviation measurement step. Alternatively, the intermediate value of the position coordinates obtained by repeatedly measuring the position coordinates of each of the positions may be calculated. In this case, the bonding device 1 calculates the positional deviation amounts Δx, Δy, and Δθ from the difference between the intermediate value of the position coordinates of the alignment marks MK1a and MK2a and the intermediate value of the position coordinates of the alignment marks MK1b and MK2b. It may be something that does.

In the first embodiment, the bonding apparatus 1 repeatedly determines the position coordinates of the alignment marks MK1a, MK2a and the alignment marks MK1b, MK2b during a preset waveform measurement period with the substrates W1 and W2 separated from each other. The vibration waveforms of the vibrations of the alignment marks MK1a, MK2a and the vibration waveforms of the vibrations of the alignment marks MK1b, MK2b may be specified from the time transition of the position coordinates obtained by measurement. Then, the bonding device 1 specifies the position coordinates corresponding to the vibration centers of the vibration waveforms of the alignment marks MK1a, MK2a and the position coordinates corresponding to the vibration centers of the vibration waveforms of the alignment marks MK1b, MK2b, and The positional deviation amounts Δx, Δy, and Δθ may be calculated based on the position coordinates of the marks MK1a, MK2a and the alignment marks MK1b, MK2b, respectively. In this case, compared to the case where the positional deviation amounts Δx, Δy, and Δθ are calculated from the intermediate values of the respective position coordinates of the alignment marks MK1a, MK2a and the alignment marks MK1b, MK2b, the positional deviation amounts Δx, Δy, and Δθ are Calculation accuracy can be improved.

In the first embodiment, an example was described in which the distance measuring section 490 measures the distance between the stage 401 and the head 402. However, the present invention is not limited to this, and the distance measurement section may measure the distance between the substrate W1 held on the stage 401 and the head 402, or the distance between the stage 401 and the substrate W2 held on the head 402. It may be something. Alternatively, the distance measuring section may measure the distance between the substrate W1 held on the stage 401 and the substrate W2 held on the head 402.

In Embodiment 1, an example has been described in which the bonding apparatus 1 executes the above-mentioned attitude adjustment process every time the positioning process is performed. However, the present invention is not limited to this. For example, the posture adjustment process may be executed only once every time the substrates W1 and W2 are joined a preset number of times, or every time a preset period elapses. You can.

In the first embodiment, an example in which the substrates W1 and W2 are bonded together under reduced pressure has been described, but the present invention is not limited to this, and the substrates W1 and W2 may be bonded together under atmospheric pressure. .

In Embodiment 2, the distance by which the head 2033H measures the distance between a plurality of portions on the bonding surface CPf of the chip CP and a portion opposing the aforementioned plurality of portions on the bonding surface WTf of the substrate WT. It may also include a measuring section. Here, the distance measuring section is, for example, a laser distance meter, and measures the distance between the head 2033H and the lower surface of the substrate WT without contacting the head 2033H and the stage 2315. In addition, the distance measuring unit is configured to detect the reflected light from the lower surface of the substrate WT when a laser beam is irradiated from below the transparent tip tool 2411 toward the substrate WT held on the stage 2315, and the tip surface of the tip tool 2411, for example. The distance between the head 2033H and the lower surface of the substrate WT is measured from the difference between the reflected light and the reflected light. Then, based on the distance measured by the distance measuring section, the control section 2009 controls the above-mentioned three steps so that the bonding surface CPf of the chip CP held by the head 2033H is parallel to the bonding surface WTf of the substrate WT. Alternatively, one piezo actuator 2333 may be controlled.

In Embodiment 2, as shown in FIG. 27A, a configuration includes a bonding device having a head 3033H provided with a pressing mechanism 3431 that presses the center part of the chip CP vertically upward while holding the peripheral part of the chip CP. It may be. Note that in FIGS. 27A and 27B, the same components as in the embodiment are given the same reference numerals as in FIGS. 17A and 17B. The head 3033H includes a tip tool 3411, a head main body portion 3413, a tip support portion 3432a, and a support portion drive portion 3432b. The tip tool 3411, like the tip tool 2411 according to the second embodiment, is made of a material (for example, silicon (Si)) that transmits photographing light (infrared light, etc.). The head main body portion 3413 includes a holding mechanism 2440 and a pressing mechanism 3431 that presses the center portion of the chip CP. The pressing mechanism 3431 includes a pressing part 3431a that is movable in the vertical direction at the center of the distal end surface of the head main body part 3413, and a pressing driving part 3431b that drives the pressing part 3431a. Further, the head body portion 3413 also has a suction portion (not shown) for fixing the tip tool 3411 to the head body portion 3413 by vacuum suction. The tip tool 3411 has a through hole 2411a formed in a position corresponding to the holding mechanism 2440 of the head body portion 3413, a through hole 3411b into which the pressing portion 3431a is inserted, and a tip support portion 3432a into which the tip support portion 3432a is inserted. It has a through hole 3411c.

The chip support portion 3432a has, for example, a pin-like shape, is provided at the tip of the head 3033H, and is movable in the vertical direction. The chip support portion 3432a supports the side of the chip CP opposite to the bonding surface CPf side. For example, as shown in FIG. 27B, four chip supporting parts 3432a are provided so as to surround the pressing part 3431a. The support part driving part 2432b drives the chip support part 3432a in the vertical direction. The support unit driving unit 3432b moves the chip support unit 3432a while the chip holding unit 2393 of the chip transport device 2039 is located at the transfer position Pos1 with the chip CP held, and the chip support unit 2432a supports the chip CP. It is moved vertically above the chip holding section 2393. Thereby, the chip CP is transferred from the chip holding section 2393 of the chip transport device 2039 to the head 3033H.

As shown in FIG. 28, when the pressing part 3431b moves the pressing part 3431a vertically upward while the peripheral part of the chip CP is held by the chip tool 3411, the central part of the chip CP moves vertically upward (+Z direction), and the central portion of the chip CP is bent vertically upward compared to its circumferential portion.

The bonding device 2 according to this modification drives the pressing part 3431a in the vertical direction by the pressing driving part 3431b while the peripheral part of the chip CP is held by the chip tool 3411 (see arrow AR301 in FIG. 28). (See arrow AR302 in FIG. 28). As a result, the chip CP is bent such that its central portion protrudes more toward the substrate WT than its peripheral portion. Then, as shown by an arrow AR303, the head 3033H approaches the substrate WT with the chip CP bent, so that the center portion of the chip CP comes into contact with the bonding surface WTf of the substrate WT. Note that the bonding apparatus moves the head 3033H in the vertical direction to bring it close to the substrate WT to a preset distance, and then bends the chip CP to bring the center part of the chip CP into contact with the bonding surface WTf of the substrate WT. You can. Thereafter, the bonding device bonds the chip CP to the substrate WT by moving the head 3033H further closer to the substrate WT while recessing the pressing portion 3431a vertically downward.

According to this configuration, since air is prevented from being drawn into the space between the substrate WT and the chip CP when the chip CP is bonded to the substrate WT, it is possible to bond the chip CP to the substrate WT well without voids. becomes.

In the second embodiment, an example of the chip bonding system 2 was described in which the chip CP is bonded to the substrate WT by bringing the bonding surface CPf of the activated chip CP into contact with the bonding surface WTf of the substrate WT. However, the present invention is not limited to this, and the chip CP may be bonded to a composite substrate in which a resin layer is formed on one surface of the substrate WT, for example.

The chip bonding system 2 according to the second embodiment may include a bonding device having a head 4033H in which a recess 4411c is provided in the portion of the chip tool 4411 that holds the chip CP, as shown in FIG. 29, for example. good. Here, the recessed portion 4411c is provided in a portion of the chip CP that corresponds to a region where the tip of the needle 2111a of the pickup mechanism 2111 of the chip supply section 2011 comes into contact.

According to this configuration, it is possible to suppress the posture of the chip CP from tilting due to particles attached to the contact portion of the needle 2111a on the chip CP. Therefore, the chip CP can be bonded well to the substrate WT.

In the chip bonding system 2 according to the second embodiment, before bringing the chip CP close to the head 2033H, the imaging unit 2041 captures alignment marks MC1a and MC1b on the substrate WT with the chip CP and the substrate WT separated by a second distance. An example of imaging has been explained. However, the present invention is not limited to this, and for example, the chip bonding system may image the alignment marks MC1a and MC1b on the substrate WT using the imaging units 2035a and 2035b before holding the chip CP in the head 2033H. In this case, the control unit 2009 stores the captured images of the alignment marks MC1a and MC1b on the substrate WT in the main storage unit or the auxiliary storage unit. Next, the control unit 2009 uses the imaging units 2035a and 2035b to image the alignment marks MC1a and MC1b of the substrate WT, and then uses the imaging units 2035a and 2035b to image the alignment marks MC1a and MC1b of the chip CP while holding the chip CP in the head 2033H. Image the MC2b. Then, the control unit 2009 uses the captured images of the alignment marks MC1a, MC1b of the substrate WT obtained by imaging by the imaging units 2035a, 2035b and the captured images of the alignment marks MC2a, MC2b of the chip CP to determine the relative position. Calculate the amount of deviation. In addition, when a plurality of chips CP are bonded to the substrate WT, in order to maintain the state in which the substrate WT is held on the stage 2315, the alignment marks MC1a, MC1b of the substrate WT are applied only once when the substrate WT is transferred to the stage 2315. is imaged and stored in the memory of the control unit 2009, and when the stage 2315 moves, the positions of the alignment marks MC1a and MC1b are predicted from the information on the alignment marks MC1a and MC1b of the substrate WT stored in the memory. Bye. In this case, when bonding the chip CP to the substrate WT, it is not necessary to image the alignment marks MC1a and MC1b of the substrate WT, and it is sufficient to image only the alignment marks MC2a and MC2b of the chip CP.

According to this configuration, even if the substrate WT is opaque, it is possible to calculate the relative positional shift amount between the substrate WT and the chip CP.

In the second embodiment, the imaging units 2035a and 2035b respectively use reflected light of illumination light (for example, infrared light) emitted from a light source of a coaxial illumination system to mark alignment marks MC1a and MC1b of the chip CP. An example of acquiring an image including the alignment marks MC2a and MC2b of the substrate WT has been described. However, the present invention is not limited to this, and for example, the alignment marks MC1a and MC1b of the chip CP and the alignment marks MC1b of the substrate WT can be aligned using transmitted light that passes through the chip CP from a light source provided on the side opposite to the imaging units 2035a and 2035b. The configuration may be such that an image including alignment marks MC2a and MC2b is acquired. For example, the imaging unit 2041 disposed vertically above the substrate WT captures an image including the alignment marks MC1a, MC1b, MC2a, and MC2b using coaxial light from the imaging units 2035a and 2035b that enters the lower side of the chip CP. The configuration may be such that the information is acquired. Alternatively, the imaging units 2035a and 2035b may be configured to acquire images including the alignment marks MC1a, MC1b, MC2a, and MC2b using coaxial light emitted from the imaging unit 2041 arranged vertically above the substrate WT. You can. Further, when the substrate WT is transparent to visible light, the coaxial light emitted from the imaging units 2035a, 2035b or the imaging unit 2041 may be visible light.

Alternatively, the imaging unit 2041 may be configured to acquire an image including the alignment marks MC1a, MC1b of the chip CP and the alignment marks MC2a, MC2b of the substrate WT. In this way, with the chip CP in contact with the bonding surface WTf of the substrate WT, the alignment marks MC1a, MC1b of the chip CP and the alignment marks MC2a, MC2b of the substrate WT are placed in the same imaging section using infrared light. 2041, by simultaneously recognizing the set of alignment marks MC1a, MC2a, and alignment marks MC1b, MC2b in one capture without moving the focus axis, it is possible to recognize the positional deviation between the chip CP and the substrate WT with high precision. . Further, the same applies to a configuration in which the alignment marks MC1a, MC1b of the chip CP and the alignment marks MC2a, MC2b of the substrate WT are simultaneously recognized using the imaging units 2035a, 2035b on the chip CP side.

In the second embodiment, the bonding device 2030 measures the distance between the bonding surface WTf of the substrate WT and the bonding surface CPf of the chip CP at three or more locations on the bonding surface (flat surface) CPf of the chip CP. It may also include a distance measuring section (not shown). The distance measuring section includes, for example, laser light sources (not shown) disposed at a plurality of locations on the side of the head 33H, and a light receiving section (not shown) that receives laser light emitted from each of the plurality of laser light sources and reflected by the substrate WT. ). Then, the head driving section 2036 may move the head 2033H holding the chip CP closer to the stage unit 2031 holding the substrate WT based on the distance measured by the distance measuring section. Furthermore, the three piezo actuators 2333 operate between the bonding surface WTf of the substrate WT and the chip CP based on the distance between the bonding surface WTf of the substrate WT and the bonding surface CPf of the chip CP measured by the distance measuring section. At least one of the distance and the inclination of the chip CP with respect to the bonding surface WTf of the substrate WT may be adjusted.

In the second embodiment, an example has been described in which the alignment marks MC1a and MC1b of the chip CP are provided on the bonding surface CPf side, but the invention is not limited to this. may be provided on the opposite surface.

In the second embodiment, an example has been described in which the stage 2315 is moved in a direction perpendicular to the vertical direction without moving the head 2033H in a direction perpendicular to the vertical direction, but the present invention is not limited to this. The stage 2315 may be moved in a direction orthogonal to the vertical direction, but the stage 2315 may not be moved in a direction orthogonal to the vertical direction. Alternatively, each of the head 2033H and the stage 2315 may be configured to move in a direction perpendicular to the vertical direction.

In the second embodiment, a case has been described in which the alignment marks MC2a and MC2b of the substrate WT have a circular shape, but the shape of the alignment marks MC2a and MC2b of the substrate WT is not limited to a circular shape, and may be, for example, a rectangular shape, Other shapes such as a triangular shape may also be used. When the shapes of the alignment marks MC2a, MC2b on the substrate WT are not circular, components in the XY direction and the rotational direction can be recognized with one alignment mark MC2a, MC2b. In this case, for example, the amount of positional deviation may be calculated by simultaneously capturing images of one alignment mark on the substrate WT and one alignment mark on the chip CP.

The present invention is capable of various embodiments and modifications without departing from the broad spirit and scope of the present invention. Further, the embodiments described above are for explaining the present invention, and do not limit the scope of the present invention. In other words, the scope of the present invention is indicated by the claims rather than the embodiments. Various modifications made within the scope of the claims and the meaning of the invention equivalent thereto are considered to be within the scope of the present invention.

This application is based on Japanese Patent Application No. 2022-116044 filed on July 21, 2022. The entire specification, claims, and drawings of Japanese Patent Application No. 2022-116044 are incorporated herein by reference.

The present invention is suitable for manufacturing, for example, CMOS image sensors, memories, arithmetic elements, and MEMS.

1,2030: Bonding device, 2: Chip bonding system, 9, 2009: Control unit, 41, 2041, 2042: Frame, 120: Chamber, 120a: Window section, 121a: Vacuum pump, 121b: Exhaust pipe, 121c: Exhaust Valve, 401, 2315: Stage, 401a: Top surface, 401b, 402b, 2411a, 2411b, 3411b, 3411c, 2114a: Through hole, 402, 2033H, 3033H, 4033H: Head, 402a: Bottom surface, 403, 2320: Stage drive unit , 404, 2036: Head drive unit, 405: XY direction drive unit, 406: Lifting drive unit, 407: Rotation drive unit, 408, 412: Pressure sensor, 411, 2333: Piezo actuator, 431, 432, 3431: Pressing mechanism , 431a, 432a, 3431a: Pressing section, 431b, 432b, 3431b: Pressing drive section, 431c, 432c: Stopper, 441, 442: Electrostatic chuck, 481, 482: Substrate heating section, 490: Distance measuring section, 500: Imaging unit, 501, 502, 2035a, 2035b: Imaging section, 504, 505, 2337: Mirror, 2010: Chip supply device, 2011: Chip supply section, 2015: Supply chip imaging section, 2031: Stage unit, 2033: Bonding section , 2034: Z direction drive section, 2037: θ direction drive section, 2038: Linear guide, 2039: Chip transport device, 2041: Image pickup section, 2111: Pick up mechanism, 2111a: Needle, 2112: Sheet holding frame, 2113: Holding frame Drive section, 2114: Cover, 2119: Frame holding section, 2301: Fixed member, 2302: Base member, 2311: X direction moving section, 2312, 2314, 2316: Opening section, 2313: Y direction moving section, 2321: X direction Drive unit, 2323: Y direction drive unit, 2331: Z-axis direction moving member, 2332: First disc member, 2334: Second disc member, 2334a, 2334b: Hole, 2336: Mirror fixing member, 2337a, 2337b: Inclined surface, 2351a, 2351b, 2418: Image sensor, 2352a, 2352b, 2419: Optical system, 2361: Rotating member, 2363: Camera Z direction drive section, 2365: Camera F direction drive section, 2391: Plate, 2392: Plate Drive part, 2393: Chip holding part, 2394: Arm, 2395: Arm driving part, 2411, 3411, 4411: Chip tool, 2413, 3413: Head body part, 2415, 2416: Hollow part, 2432a, 3432a: Chip support part , 2432b, 2512, 3432b: Support drive unit, CP: Chip, CPf: Joint surface, Ga, Gb: Photographed image, TE: Sheet, MC1a, MC1b, MC2a, MC2b, MK1a, MK1b, MK2a, MK2b: Alignment mark , W1, W2, WT: substrate, W1c, W2c: central part, W1s, W2s: peripheral part, WTf: bonding surface

Claims

A joining method for joining a first workpiece and a second workpiece vibrating relative to the first workpiece, the method comprising:
a vibration waveform identification step of identifying a vibration waveform of vibration of the second workpiece relative to the first workpiece based on a time course of a positional shift amount of the second workpiece relative to the first workpiece;
a timing estimation step of estimating a target timing at which a positional deviation amount of the second workpiece relative to the first workpiece becomes a target amount based on the vibration waveform;
a contacting step of bringing the second workpiece into contact with the first workpiece based on the estimated target timing;
Joining method.
a positional deviation amount measuring step of repeatedly measuring the positional deviation amount of the second object to be welded with respect to the first object to be welded;
Correction of moving the second workpiece relative to the first workpiece to correct the position of the second workpiece relative to the first workpiece based on the positional deviation amount. further comprising a moving step;
The joining method according to claim 1.
In the positional deviation measurement step and/or the vibration waveform identification step of repeatedly measuring the amount of positional deviation of the second workpiece relative to the first workpiece, repeatedly measuring the amount of positional deviation at time intervals shorter than the vibration period;
The joining method according to claim 1 or 2.
In the contact step, the first object to be welded is moved from the second object to be welded from a state where the first object to be welded and the second object to be welded are separated from each other at a timing when the amount of positional deviation reaches the target amount. Starting an operation for bringing the first object to be welded and the second object into contact at a time point necessary for bringing the object into contact with the object,
The joining method according to claim 1 or 2.
The first object to be bonded is a substrate,
In the contacting step, the first object to be welded is moved such that the center portion of the joint surface of the first object to be welded with the second object protrudes toward the second object compared to the peripheral portion. Bringing the center part of the joint surface of the first object to be joined to the joint surface of the second object to be joined with the first object to be joined in a bent state;
The joining method according to claim 1 or 2.
The first object to be bonded has at least one first alignment mark,
The second object to be joined has at least one second alignment mark,
In the positional deviation amount measuring step of repeatedly measuring the amount of positional deviation of the second object to be bonded relative to the first object, an image of the first alignment mark and the first alignment mark, which are simultaneously imaged within one field of view by an imaging unit, are repeating measuring the amount of positional deviation of the first alignment mark with respect to the second alignment mark from the images of the second alignment mark;
The joining method according to claim 1 or 2.
In the positional deviation amount measurement step, the vibration waveform identification step, the timing estimation step, and the contact step,
A first workpiece holding part that holds the first workpiece and a second workpiece holding part that holds the second workpiece have a top plate disposed vertically above, and a vibration isolation mechanism. a plate supporter that movably supports the top plate vertically upward; detects vibrations transmitted to the top plate; and based on the detected vibrations, moves the top plate relative to the plate supporter; to move relatively,
The joining method according to claim 6.
a second workpiece holding part that holds the second workpiece or the second workpiece at a plurality of parts of the first workpiece holding section that holds the first workpiece or the first workpiece; further comprising a posture adjustment step of measuring a distance between each of the plurality of portions in the part and a portion corresponding to each of the plurality of portions, and adjusting the posture of the second workpiece with respect to the first workpiece based on the measured distance. ,
The joining method according to claim 1 or 2.
A joining method of joining a second workpiece provided with a plurality of second alignment marks corresponding to the plurality of first alignment marks to a first workpiece provided with a plurality of first alignment marks, the method comprising: ,
At least one of the second object to be welded and an imaging unit that images the plurality of first alignment marks and the plurality of second alignment marks is vibrating with respect to the first object to be welded,
By bringing the first object relatively close to the second object, the plurality of first alignment marks and the plurality of second alignment marks are within the depth of field of the imaging unit. a side of the second object to be welded opposite to the first object and a side of the first object to be welded opposite to the side of the second object; simultaneously capturing images of the plurality of first alignment marks and the plurality of second alignment marks from at least one side thereof, and photographing the plurality of imaged first alignment marks and the plurality of second alignment marks; a positional deviation amount measuring step of measuring a relative positional deviation amount between the first object to be welded and the second object to be welded from the image;
Based on the positional deviation amount, the second workpiece is moved relative to the first workpiece in a direction in which the positional deviation amount reaches a target value. a welding step of correcting the relative position with respect to the first object and then bringing the second object into contact with the first object and joining the second object,
Joining method.
The first object to be welded vibrates with a vibration waveform including a vibration component having a frequency of 10 Hz or less or an amplitude of 10 μm or less with respect to the second object to be welded.
The joining method according to any one of claims 1, 2, and 9.
A joining method of joining a second workpiece provided with a plurality of second alignment marks corresponding to the plurality of first alignment marks to a first workpiece provided with a plurality of first alignment marks, the method comprising: ,
At least one of the second object to be welded and an imaging unit that images the plurality of first alignment marks and the plurality of second alignment marks is vibrating with respect to the first object to be welded,
An imaging unit that captures images of the plurality of first alignment marks and the plurality of second alignment marks is placed in a posture in which the optical axis is perpendicular to the vertical direction, and the plurality of first alignment marks and the plurality of second alignment marks are arranged on the imaging unit. The imaging unit detects the plurality of first alignment marks and the plurality of first alignment marks by receiving the light traveling in the vertical direction from the plurality of second alignment marks through an optical path conversion member that converts the light into a direction perpendicular to the vertical direction. 2 alignment marks, and from the photographed images of the plurality of first alignment marks and the plurality of second alignment marks, a relative positional shift between the first object to be welded and the second object to be welded. a positional deviation measurement step for measuring the amount;
Based on the amount of positional deviation, the second object to be joined is moved relative to the first object in a direction in which the amount of positional deviation becomes smaller. a bonding step of correcting a positional deviation amount for correcting a relative position with respect to the object to be bonded, and then bringing the second object to be bonded into contact with the first object to be bonded;
Joining method.
A welding device for joining a first object to be welded and a second object to be welded,
a first object holding part that holds the first object to be bonded;
a second workpiece holding part that vibrates with respect to the first workpiece holding part and holds the second workpiece;
At least one of the first workpiece holding part and the second workpiece holding part is moved in the first direction in which the first workpiece holding part and the second workpiece holding part approach each other, or in the first direction. a holding part drive unit that moves the first workpiece holding part and the second workpiece holding part in a second direction where they are separated;
In a state where the first object to be welded and the second object to be welded are separated, the first object to be welded is moved in a direction orthogonal to the first direction and the second direction at a preset time interval. The amount of positional deviation with respect to the second object to be welded is repeatedly measured, the vibration waveform of the vibration of the second object to be welded relative to the first object is determined from the time course of the amount of positional deviation, and the vibration waveform is determined based on the vibration waveform. Then, the target timing at which the amount of positional deviation of the second workpiece with respect to the first workpiece becomes the target amount is estimated, and based on the estimated target timing, the first workpiece holding part and the first workpiece a control unit that controls the holding unit drive unit to move at least one of the second workpiece holding unit in the first direction to bring the second workpiece into contact with the first workpiece; Equipped with
Bonding equipment.
a top plate in which a first workpiece holding part that holds the first workpiece and a second workpiece holding part that holds the second workpiece are arranged vertically above;
a plate support part having a vibration isolation mechanism and movably supporting the top plate vertically upward;
a vibration detection unit that detects vibrations transmitted to the top plate;
a plate drive unit that moves the top plate relative to the plate support unit;
a vibration isolation control unit that controls the plate drive unit to move the top plate so as to cancel out the vibration based on the vibration detected by the vibration detection unit;
The joining device according to claim 12.
between the plurality of parts of the first workpiece holding part that holds the first workpiece and the parts corresponding to each of the plurality of parts of the second workpiece holding part that holds the second workpiece; a distance measuring section that measures distance;
further comprising: an attitude adjustment unit that adjusts the attitude of the second object to be welded relative to the first object based on the distance measured by the distance measurement unit;
The joining device according to claim 12 or 13.
A bonding device for bonding a second object having a plurality of second alignment marks corresponding to the plurality of first alignment marks to a first object having a plurality of first alignment marks. ,
a first object holding part that holds the first object to be bonded;
a second workpiece holding part that vibrates with respect to the first workpiece holding part and holds the second workpiece;
At least one of the first workpiece holding part and the second workpiece holding part is moved in the first direction in which the first workpiece holding part and the second workpiece holding part approach each other, or in the first direction. a holding part drive unit that moves the first workpiece holding part and the second workpiece holding part in a second direction where they are separated;
One for each of a plurality of sets each consisting of one first alignment mark and one second alignment mark, each of which images a plurality of sets each consisting of one first alignment mark and one second alignment mark. an imaging unit;
The plurality of first alignment marks and the plurality of second alignment marks are spaced apart by a preset first distance that falls within the depth of field of the imaging unit, and the plurality of imaging units each include: Each of the plurality of imaging units is arranged at a position where a set of one first alignment mark and one second alignment mark can be imaged, and each of the plurality of imaging units captures the corresponding one first alignment mark at the same timing. and one second alignment mark are simultaneously imaged in one image capture, and from the captured images of the plurality of first alignment marks and the plurality of second alignment marks imaged by the plurality of imaging units. A relative displacement amount between the first object to be welded and the second object to be welded is measured, and based on the amount of positional deviation, the second object to be welded is adjusted to the first object to be welded. After correcting the relative position of the second object to be welded with respect to the first object by relatively moving it in a direction in which the amount of positional deviation becomes the target value, By moving at least one of the object holding part and the second object holding part in the first direction, the second object to be joined is brought into contact with the first object to be joined. a control unit that controls the holding unit drive unit;
Bonding equipment.
The first object to be welded vibrates with a vibration waveform including a vibration component having a frequency of 10 Hz or less or an amplitude of 10 μm or less with respect to the second object to be welded.
The joining device according to claim 12, 13 or 15.