WO2024016727A1 - 一种矩形腔和圆形腔多模耦合的基片集成波导双工器 - Google Patents

一种矩形腔和圆形腔多模耦合的基片集成波导双工器 Download PDF

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WO2024016727A1
WO2024016727A1 PCT/CN2023/085819 CN2023085819W WO2024016727A1 WO 2024016727 A1 WO2024016727 A1 WO 2024016727A1 CN 2023085819 W CN2023085819 W CN 2023085819W WO 2024016727 A1 WO2024016727 A1 WO 2024016727A1
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integrated waveguide
substrate
circular cavity
substrate integrated
waveguide
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PCT/CN2023/085819
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English (en)
French (fr)
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朱晓维
张宝松
杨献龙
洪伟
周健义
于志强
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东南大学
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Publication of WO2024016727A1 publication Critical patent/WO2024016727A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H01P1/20327—Electromagnetic interstage coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure

Definitions

  • the invention relates to the field of microwave passive devices, and in particular to a substrate integrated waveguide duplexer based on multi-mode coupling of a rectangular cavity and a circular cavity with orthogonal modes.
  • duplexers As an important component of them, have also attracted widespread attention and research.
  • Traditional duplexers usually consist of upper and lower channel filters and an intermediate matching network such as a T-junction. They can be divided into two categories: planar structures and non-planar structures. Planar structures such as microstrip lines, strip lines, and slot lines are often used, while non-planar structures are mainly composed of rectangular waveguides, circular waveguides, and coaxial lines. Planar structure circuits can easily interconnect active and passive structural circuits.
  • Substrate integrated waveguide combines the advantages of waveguides and microstrip lines, such as high Q value, low radiation loss, large power capacity, easy integration and processing with planar circuits, and low cost, which has led to extensive research. and applications.
  • Substrate integrated waveguide technology is a new waveguide device with low insertion loss, high quality factor, and high power capacity that has appeared in the past decade.
  • Various passive and active substrate integrated waveguides are realized based on PCB and LTCC processes. It has the advantages of traditional metal waveguides and planar circuits, and has unparalleled advantages in production cost and design complexity in the microwave and millimeter wave frequency bands.
  • microwave and millimeter wave communication systems that have attracted widespread attention, especially the large-scale MIMO system, microwave and millimeter wave front-end modules have put forward higher requirements for circuit loss, size and processing accuracy. Therefore, miniaturized, high-performance devices or modules have become an important research focus.
  • the high frequency band especially the Ka band, it is affected by processing accuracy, and it is difficult for conventional duplexers to work in this frequency band.
  • the purpose of the present invention is to provide a substrate-integrated waveguide duplexer based on multi-mode coupling of mode orthogonal rectangular cavities and circular cavities that can achieve Ka-band transmission under existing processing accuracy conditions. It can achieve higher frequency band transmission under the existing processing accuracy conditions, effectively achieving high frequency. Since the T-junction and other matching networks of traditional duplexers are eliminated, the size of the duplexer is greatly reduced, effectively achieving miniaturization. .
  • the present invention provides a substrate integrated waveguide duplexer with multi-mode coupling of rectangular cavity and circular cavity, wherein the substrate integrated waveguide duplexer includes a substrate integrated waveguide rectangular cavity located in the middle, The substrate-integrated waveguide circular cavity on the right and the substrate-integrated waveguide circular cavity on the left; among them, the one in the middle
  • the substrate integrated waveguide rectangular cavity and the substrate integrated waveguide circular cavity on the right are coupled by the coplanar waveguide on the right.
  • the substrate integrated waveguide rectangular cavity in the middle and the substrate integrated waveguide circular cavity on the left are coupled. are coupled by the coplanar waveguide on the left.
  • the substrate integrated waveguide rectangular cavity located in the middle is equipped with an input microstrip line on the lower side.
  • the substrate integrated waveguide circular cavity located on the right is equipped with a lower channel output microstrip line on the right side. There is an upper channel output microstrip line on the left side of the substrate integrated waveguide circular cavity.
  • the substrate integrated waveguide rectangular cavity located in the middle has a left coplanar waveguide and a right coplanar waveguide respectively on both sides, an input microstrip line is provided at the bottom, and a first ring-shaped metal through hole is provided around the periphery. .
  • the substrate integrated waveguide circular cavity located on the right side is connected to the coplanar waveguide on the right side on the left side, and a lower channel output microstrip line is provided on the upper part.
  • a third annular metal through hole is provided with a first type of metal disturbing through hole and a second type of metal disturbing through hole within the circle of metal through hole.
  • the substrate integrated waveguide circular cavity located on the left has a right side connected to the coplanar waveguide on the left, an upper channel output microstrip line is provided on the upper part, and a circle is provided around the substrate integrated waveguide circular cavity located on the left
  • the second ring-shaped metal through hole is provided with a third type of metal disturbance through hole inside the ring of metal through holes.
  • the coupling position of the rectangular cavity of the integrated waveguide on the middle substrate and the circular cavity of the integrated waveguide on the right side is located in the right coplanar waveguide area where the field strength of the TE101 mode is stronger and the field strength of the TE201 mode is weaker; it is located on the middle substrate
  • the mode orthogonality of the TE201 mode and the TE101 mode achieves better isolation between the two channels, and each generates a transmission pole to expand the bandwidth.
  • the lower channel of the duplexer is composed of a rectangular cavity located on the middle substrate integrated waveguide and a circular cavity located on the right substrate integrated waveguide
  • the upper channel of the duplexer is composed of a rectangular cavity located on the middle substrate integrated waveguide and a circular cavity located on the left substrate integrated
  • the waveguide is composed of a circular waveguide; among them, the multi-mode coupling topology of the lower channel is that the TE101 mode located in the rectangular cavity of the middle substrate integrated waveguide is coupled through the coplanar waveguide on the right and the two TM110 degenerate modes located in the circular substrate integrated waveguide on the right.
  • the multi-mode coupling topology of the upper channel is formed by coupling the TE201 mode located in the rectangular cavity of the middle substrate integrated waveguide through the coplanar waveguide on the left and the two TM110 degenerate modes located in the circular cavity of the left substrate integrated waveguide.
  • the duplexer wherein the first type of metal disturbance via hole includes a first metal disturbance via hole located on the left side of the right substrate integrated waveguide circular cavity and a second metal disturbance via hole located on the right side of the right substrate integrated waveguide circular cavity.
  • Metal perturbation through holes, the two metal perturbation through holes are symmetrically located with respect to the center of the substrate integrated waveguide circular cavity between the feed line and the right coplanar waveguide.
  • the second type of metal disturbance via hole includes a third metal disturbance via hole located on the upper side of the right substrate integrated waveguide circular cavity and a third metal disturbance via hole located on the lower side of the right substrate integrated waveguide circular cavity.
  • the third type of metal disturbance via hole includes a fifth metal disturbance via hole located on the left side of the left substrate integrated waveguide circular cavity and a third metal disturbance via hole located on the right side of the left substrate integrated waveguide circular cavity.
  • Six metal perturbation through holes, the two metal perturbation through holes are symmetrically located outside the feed line and the left coplanar waveguide relative to the center of the circular cavity of the substrate integrated waveguide.
  • the input microstrip line, the upper channel output microstrip line and the lower channel output microstrip line are all 50 ohms.
  • the present invention discloses a substrate-integrated waveguide duplexer based on multi-mode coupling of a rectangular cavity and a circular cavity with orthogonal modes, which can achieve higher frequency band transmission under existing processing accuracy conditions and effectively achieve high frequency. .
  • the size of the filter is greatly reduced under the condition of similar performance, effectively achieving miniaturization.
  • the present invention does not require a multi-layer structure and can be realized only through ordinary PCB technology. The structure is simple and the processing is convenient.
  • Figure 1 is a structural diagram of a substrate integrated waveguide duplexer in a specific embodiment of the present invention
  • Figure 2 is a frequency response curve diagram of a duplexer in a specific embodiment of the present invention.
  • the figure shows: input port 1, upper channel output port 2, lower channel output port 3, microstrip arc bend 4, duplexer 5, substrate integrated waveguide rectangular cavity 51 in the middle, substrate on the right Integrated waveguide circular cavity 52, substrate integrated waveguide circular cavity 53 on the left, third type metal disturbance through hole 6, first type metal disturbance through hole 7, second type metal disturbance through hole 8, left side Planar waveguide 9, right coplanar waveguide 10, input microstrip line 11, upper channel output microstrip line 12, lower channel output microstrip line 13, first annular metal through hole 14, second annular metal through hole 15, Three annular metal through holes 16, fifth metal disturbance through holes 61, sixth metal disturbance through holes 62, first metal disturbance through holes 71, second metal disturbance through holes 72, third metal disturbance through holes 81, fourth metal disturbance through holes Disturbance via 82.
  • the substrate-integrated waveguide duplexer 5 includes a rectangular substrate-integrated waveguide located in the middle. Cavity 51, a substrate integrated waveguide circular cavity 52 located on the right and a substrate integrated waveguide circular cavity 53 located on the left; wherein, the substrate integrated waveguide rectangular cavity 51 located in the middle and the substrate integrated waveguide located on the right
  • the circular cavities 52 are coupled by the coplanar waveguide 10 on the right, and the substrate-integrated waveguide rectangular cavity 51 in the middle is coupled to the substrate integrated waveguide 51 on the left.
  • the waveguide circular cavities 53 are coupled by the coplanar waveguide 9 on the left.
  • the substrate integrated waveguide rectangular cavity 51 in the middle is provided with an input microstrip line 11 on the lower side.
  • the substrate integrated waveguide circular cavity 52 on the right is located on the right.
  • a lower channel output microstrip line 13 is provided on the side, and an upper channel output microstrip line 12 is provided on the left side of the substrate integrated waveguide circular cavity 53 located on the left side.
  • the integrated waveguide duplexer includes a dielectric substrate.
  • the upper surface of the dielectric substrate is provided with an upper metal layer.
  • the lower surface of the dielectric substrate is provided with a lower metal layer.
  • a rectangular substrate integrated waveguide rectangular cavity 51 and a circular cavity are located in the middle.
  • the first annular metal through hole 14, the second annular metal through hole 15, and the third annular metal through hole 15 are evenly distributed in the circumferential direction of the substrate integrated waveguide circular cavity 52 on the right and the substrate integrated waveguide circular cavity 53 on the left. Ring-shaped metal through hole 16.
  • the substrate integrated waveguide rectangular cavity 51 in the middle is provided with an input microstrip line 11 on the lower side
  • the substrate integrated waveguide circular cavity 52 on the right is provided with a lower channel output microstrip line 13 on the right side
  • the substrate on the left is
  • An upper channel output microstrip line 12 is provided on the left side of the integrated waveguide circular cavity 53.
  • the input microstrip line 11, the upper channel output microstrip line 12, and the lower channel output microstrip line 13 are all 50 ohms.
  • the end of the input microstrip line 11 is the input port 1
  • the end of the lower channel output microstrip line 13 is the second output port 3
  • the end of the upper channel output microstrip line 12 is the first output port 2.
  • the substrate integrated waveguide duplexer 5 is also provided with a first type of metal disturbance through hole 7, a second type of metal disturbance through hole 8 and a third type of metal disturbance through the upper metal layer and the lower metal layer.
  • the first type of metal disturbance through hole 7 includes a first metal disturbance through hole 71 located on the left side of the substrate integrated waveguide circular cavity 52 on the right side and a second metal disturbance through hole 71 located on the right side of the substrate integrated waveguide circular cavity 52 on the right side.
  • the two metal disturbance through holes 72 are mirror symmetrical along the diameter of the substrate integrated waveguide circular cavity 52 located on the right side, and are located inside the lower channel output microstrip line 13 and the right coplanar waveguide 10;
  • second The metal-like disturbance via 8 includes a third metal disturbance via 81 located on the upper side of the substrate integrated waveguide circular cavity 52 on the right and a fourth metal disturbance via located on the lower side of the substrate integrated waveguide circular cavity 52 on the right.
  • the two metal disturbance through holes are symmetrical along the center of the substrate integrated waveguide circular cavity 52 located on the right;
  • the third type of metal disturbance through hole 6 includes the left side of the substrate integrated waveguide circular cavity 53 located on the left
  • the fifth metal disturbance through hole 61 and the sixth metal disturbance through hole 62 located on the right side of the substrate integrated waveguide circular cavity 53 on the left
  • the two metal disturbance through holes are located along the substrate integrated waveguide circular cavity 53 on the left
  • the diameter is mirror symmetrical and is located outside the upper channel output microstrip line 12 and the left coplanar waveguide 9.
  • the first type of metal disturbance through hole 7 is mirror symmetrical with respect to the second type of metal disturbance through hole 8 .
  • the relative dielectric constant of the dielectric substrate is 2.2, and the dielectric thickness is 0.254mm.
  • the overall planar size of the duplexer is 23.8mm*14.1mm.
  • the signal is input through the input port 1, and passes from the input microstrip line 11 through the substrate integrated waveguide rectangular cavity 51 in the middle, loading the first type of metal disturbance through hole 7 and the second type of metal disturbance through hole 8.
  • the substrate integrated waveguide circular cavity 52 on the right and the substrate integrated waveguide circular cavity 53 on the left loaded with the third type metal disturbance through hole 6 are filtered and the lower channel signal is transmitted to the lower channel output microstrip Line 13, warp Output through the second output port 3, the upper channel signal is transmitted to the upper channel output microstrip line 12, and output through the first output port 2.
  • Figure 2 shows the frequency response curve of the duplexer in this specific implementation.
  • the four solid lines are the test result curves, and the four dotted curves are the simulation result curves.
  • the center frequency of the lower channel of the duplexer in this specific implementation is 26GHz, and the bandwidth is 1.4GHz, the insertion loss in the lower channel is better than 1.8dB, and the return loss in the passband is better than 12dB;
  • the center frequency of the upper channel is 30GHz, the bandwidth is 1.4GHz, the insertion loss in the lower channel is better than 2dB, and the return loss in the passband Better than 14dB; output port isolation better than 30dB.
  • the simulation and test results are in good agreement.

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Abstract

本发明公开了一种矩形腔和圆形腔多模耦合的基片集成波导双工器，所述基片集成波导双工器中，位于中间的基片集成波导矩形腔与位于右侧的基片集成波导圆形腔之间由右侧共面波导耦合，位于中间的基片集成波导矩形腔与位于左侧的基片集成波导圆形腔之间由左侧共面波导耦合，位于中间的基片集成波导矩形腔下侧设有输入微带线，位于右侧的基片集成波导圆形腔右侧设有下通道输出微带线，位于左侧的基片集成波导圆形腔左侧设有上通道输出微带线，本发明相对于传统的基于基片集成波导双工器不需要T型结等匹配网络，设计简单，体积更小，适用25.3-26.7GHz频段和29.3-30.7GHz频段，可应用于该频段的5G毫米波移动通信系统中。

Description

一种矩形腔和圆形腔多模耦合的基片集成波导双工器 技术领域
本发明涉及微波无源器件领域，特别是涉及一种基于模式正交的矩形腔和圆形腔多模耦合的基片集成波导双工器。
背景技术
随着现代无线通信系统的高速发展和日臻成熟，作为其重要组成部分的双工器也引起了广泛的关注和研究。传统的双工器通常由上下两个通道滤波器和中间的匹配网络如T型结组成，可以分为平面结构和非平面结构两大类。平面结构经常用到的诸如微带线、带状线和槽线等，而非平面结构主要由矩形波导、圆波导以及同轴线等结构构成。平面结构电路可以容易的将有源和无源等结构电路进行互连。然而，当频率增高到波长与传输线相比拟时，平面电路辐射损耗增加，传输效率降低导致这种结构不适合工作在毫米波波段，也无法构成高Q值的部件。相反，非平面结构具有损耗小、功率容量大等优点，但很难与其他电路如有源器件等有效的集成。基片集成波导则同时融合了波导和微带线的优点，例如高Q值、辐射损耗小、功率容量较大、易与平面电路集成和加工、成本低等优点，使得它得到了广泛的研究与应用。
基片集成波导技术是最近十几年来出现的低插入损耗、高品质因数、高功率容量的一种新型的波导器件，基于PCB和LTCC等工艺实现的各种基片集成波导无源以及有源兼具有传统金属波导和平面电路的优点，且生产成本和设计复杂度在微波毫米波频段具有无可比拟的优势。
目前引起广泛关注的5G微波毫米波通信系统，特别是大规模的MIMO系统，微波毫米波前端模块对电路的损耗、尺寸以及加工精度提出了更高的要求。因此，小型化，高性能的器件或者模块成为了重要的研究热点。然而，在高频段尤其是Ka波段受加工精度的影响，常规的双工器很难在该频段工作。
发明内容
技术问题：本发明的目的是提供一种能够在现有加工精度条件下实现Ka波段传输的基于模式正交的矩形腔和圆形腔多模耦合的基片集成波导双工器。可在现有加工精度条件下实现更高频段的传输，有效实现高频化，由于消除了传统双工器的T型结等匹配网络，大大减小了双工器的尺寸，有效实现小型化。
技术方案：为达到此目的，本发明的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其中基片集成波导双工器包括位于中间的基片集成波导矩形腔，位于右侧的基片集成波导圆形腔和位于左侧的基片集成波导圆形腔；其中，位于中间的 基片集成波导矩形腔与位于右侧的基片集成波导圆形腔之间由右侧共面波导耦合，位于中间的基片集成波导矩形腔与位于左侧的基片集成波导圆形腔之间由左侧共面波导耦合，位于中间的基片集成波导矩形腔下侧设有输入微带线，位于右侧的基片集成波导圆形腔右侧设有下通道输出微带线，位于左侧的基片集成波导圆形腔左侧设有上通道输出微带线。
所述位于中间的基片集成波导矩形腔，其两侧分别设有左侧共面波导、右侧共面波导，下部设有输入微带线，在其周边设有一圈第一环形金属通孔。
所述位于右侧的基片集成波导圆形腔，其左侧连接右侧共面波导，上部设有下通道输出微带线，在位于右侧的基片集成波导圆形腔周边设有一圈第三环形金属通孔，在该一圈金属通孔内测设有第一类金属扰动通孔和第二类金属扰动通孔。
所述位于左侧的基片集成波导圆形腔，其右侧连接左侧共面波导，上部设有上通道输出微带线，在位于左侧的基片集成波导圆形腔周边设有一圈第二环形金属通孔，在该一圈金属通孔内测设有第三类金属扰动通孔。
所述位于中间基片集成波导矩形腔与位于右侧基片集成波导圆形腔的耦合位置位于TE101模场强较强、TE201模场强较弱的右侧共面波导区域；位于中间基片集成波导矩形腔与位于左侧基片集成波导圆形腔的耦合位置位于TE201模场强较强、TE101模场强较弱的左侧共面波导区域；利用位于中间基片集成波导矩形腔的TE201模和TE101模的模式正交性，实现了两个通道之间较好的隔离度，并各产生一个传输极点以拓展带宽。
所述双工器的下通道由位于中间基片集成波导矩形腔和位于右侧基片集成波导圆形组成，双工器上通道由位于中间基片集成波导矩形腔和位于左侧基片集成波导圆形组成；其中，下通道的多模耦合拓扑为位于中间基片集成波导矩形腔的TE101模通过右侧共面波导和位于右侧基片集成波导圆形的两个TM110简并模耦合而成；上通道的多模耦合拓扑为位于中间基片集成波导矩形腔的TE201模通过左侧共面波导和位于左侧基片集成波导圆形的两个TM110简并模耦合而成。
两个模式耦合的地方是一个区域，即左侧共面波导和右侧共面波导，其中每个模式遍布对应的腔体。
所述双工器，其中第一类金属扰动通孔包括位于右侧基片集成波导圆形腔左侧的第一金属扰动通孔和位于右侧基片集成波导圆形腔右侧的第二金属扰动通孔，该两金属扰动通孔相对基片集成波导圆形腔的圆心对称位于馈线与右侧共面波导之间。
所述双工器，其中，第二类金属扰动通孔包括位于右侧基片集成波导圆形腔上侧的第三金属扰动通孔和位于右侧基片集成波导圆形腔下侧的第四金属扰动通孔，且该两金属扰动通孔相对位于右侧基片集成波导圆形腔的圆心对称设置。
所述双工器，其中，第三类金属扰动通孔包括位于左侧基片集成波导圆形腔左侧的第五金属扰动通孔和位于左侧基片集成波导圆形腔右侧的第六金属扰动通孔，该两金属扰动通孔相对位于基片集成波导圆形腔的圆心对称设置在馈线与左侧共面波导外侧。
所述输入微带线，上通道输出微带线和下通道输出微带线均为50欧姆。
有益效果：本发明公开了基于模式正交的矩形腔和圆形腔多模耦合的基片集成波导双工器，可在现有加工精度条件下实现更高频段的传输，有效实现高频化。同时相对于传统的需要T型结等匹配网络的双工器，在性能相近的条件下，大大减小了滤波器的尺寸，有效实现小型化。并且，相对于传统的多层结构，本发明无需多层结构，仅通过普通的PCB工艺即可实现，结构简单，加工方便。
附图说明
图1为本发明具体实施方式中基片集成波导双工器的结构图；
图2为本发明具体实施方式中双工器的频率响应曲线图。
图中有：输入端口1、上通道输出端口2、下通道输出端口3、微带弧形弯折4、双工器5、位于中间的基片集成波导矩形腔51、位于右侧的基片集成波导圆形腔52、位于左侧的基片集成波导圆形腔53、第三类金属扰动通孔6、第一类金属扰动通孔7、第二类金属扰动通孔8、左侧共面波导9、右侧共面波导10、输入微带线11、上通道输出微带线12、下通道输出微带线13、第一环形金属通孔14、第二环形金属通孔15、第三环形金属通孔16、第五金属扰动通孔61、第六金属扰动通孔62、第一金属扰动通孔71、第二金属扰动通孔72、第三金属扰动通孔81、第四金属扰动通孔82。
具体实施方式
下面结合具体实施方式和附图对本发明的技术方案作进一步的介绍。
本具体实施方式公开了一种基于模式正交的矩形腔和圆形腔多模耦合的基片集成波导双工器，所述基片集成波导双工器5包括位于中间的基片集成波导矩形腔51，位于右侧的基片集成波导圆形腔52和位于左侧的基片集成波导圆形腔53；其中，位于中间的基片集成波导矩形腔51与位于右侧的基片集成波导圆形腔52之间由右侧共面波导10耦合，位于中间的基片集成波导矩形腔51与位于左侧的基片集 成波导圆形腔53之间由左侧共面波导9耦合，位于中间的基片集成波导矩形腔51下侧设有输入微带线11，位于右侧的基片集成波导圆形腔52右侧设有下通道输出微带线13，位于左侧的基片集成波导圆形腔53左侧设有上通道输出微带线12。如图1所示。集片集成波导双工器包括介质基片，介质基片的上表面设有上金属层，介质基片的下表面设有下金属层，矩形的位于中间的基片集成波导矩形腔51和圆形的位于右侧的基片集成波导圆形腔52、位于左侧的基片集成波导圆形腔53周向分别均匀分布第一环形金属通孔14、第二环形金属通孔15、第三环形金属通孔16。位于中间的基片集成波导矩形腔51下侧设有输入微带线11，位于右侧的基片集成波导圆形腔52右侧设有下通道输出微带线13，位于左侧的基片集成波导圆形腔53左侧设有上通道输出微带线12。输入微带线11、上通道输出微带线12、下通道输出微带线13均为50欧姆。输入微带线11端部为输入端口1，下通道输出微带线13端部为第二输出端口3，上通道输出微带线12端部为第一输出端口2。
如图1所示，基片集成波导双工器5内还设有贯穿上金属层和下金属层的第一类金属扰动通孔7、第二类金属扰动通孔8和第三类金属扰动通孔6。其中第一类金属扰动通孔7包括位于右侧的基片集成波导圆形腔52左侧的第一金属扰动通孔71和位于右侧的基片集成波导圆形腔52右侧的第二金属扰动通孔72，两金属扰动通孔沿位于右侧的基片集成波导圆形腔52的直径镜像对称，且位于下通道输出微带线13与右侧共面波导10的内侧；第二类金属扰动通孔8包括位于右侧的基片集成波导圆形腔52上侧的第三金属扰动通孔81和位于右侧的基片集成波导圆形腔52下侧的第四金属扰动通孔82，两金属扰动通孔沿位于右侧的基片集成波导圆形腔52的圆心中心对称；第三类金属扰动通孔6包括位于左侧的基片集成波导圆形腔53左侧的第五金属扰动通孔61和位于左侧的基片集成波导圆形腔53右侧的第六金属扰动通孔62，两金属扰动通孔沿位于左侧的基片集成波导圆形腔53的直径镜像对称，且位于上通道输出微带线12与左侧共面波导9的外侧。同时第一类金属扰动通孔7关于第二类金属扰动通孔8呈镜像对称。
介质基片的相对介电常数为2.2，介质厚度为0.254mm。双工器的总体平面尺寸为23.8mm*14.1mm。
本具体实施方式中，通过输入端口1输入信号，从输入微带线11经过位于中间的基片集成波导矩形腔51、加载第一类金属扰动通孔7和第二类金属扰动通孔8的位于右侧的基片集成波导圆形腔52、加载第三类金属扰动通孔6的位于左侧的基片集成波导圆形腔53，经过滤波后，下通道信号传输至下通道输出微带线13，经 过第二输出端口3输出，上通道信号传输至上通道输出微带线12，经过第一输出端口2输出。
图2为本具体实施方式中双工器的频率响应曲线，其中四条实线为测试结果曲线，四条虚线曲线为仿真结果曲线，本具体实施方式的双工器下通道中心频率为26GHz，带宽为1.4GHz,下通道内插入损耗优于1.8dB，通带内回波损耗优于12dB；上通道中心频率为30GHz，带宽为1.4GHz,下通道内插入损耗优于2dB，通带内回波损耗优于14dB；输出端口隔离度优于30dB。仿真和测试结果具有良好的一致性。

Claims (10)

  1. 一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述基片集成波导双工器(5)包括位于中间的基片集成波导矩形腔(51)，位于右侧的基片集成波导圆形腔(52)和位于左侧的基片集成波导圆形腔(53)；其中，位于中间的基片集成波导矩形腔(51)与位于右侧的基片集成波导圆形腔(52)之间由右侧共面波导(10)耦合，位于中间的基片集成波导矩形腔(51)与位于左侧的基片集成波导圆形腔(53)之间由左侧共面波导(9)耦合，位于中间的基片集成波导矩形腔(51)下侧设有输入微带线(11)，位于右侧的基片集成波导圆形腔(52)右侧设有下通道输出微带线(13)，位于左侧的基片集成波导圆形腔(53)左侧设有上通道输出微带线(12)。
  2. 根据权利要求1所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述位于中间的基片集成波导矩形腔(51)，其两侧分别设有左侧共面波导(9)、右侧共面波导(10)，下部设有输入微带线(11)，在其周边设有一圈第一环形金属通孔(14)。
  3. 根据权利要求1所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述位于右侧的基片集成波导圆形腔(52)，其左侧连接右侧共面波导(10)，上部设有下通道输出微带线(13)，在位于右侧的基片集成波导圆形腔(52)周边设有一圈第三环形金属通孔(16)，在该一圈金属通孔内测设有第一类金属扰动通孔(7)和第二类金属扰动通孔(8)。
  4. 根据权利要求1所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述位于左侧的基片集成波导圆形腔(53)，其右侧连接左侧共面波导(9)，上部设有上通道输出微带线(12)，在位于左侧的基片集成波导圆形腔(53)周边设有一圈第二环形金属通孔(15)，在该一圈金属通孔内测设有第三类金属扰动通孔(6)。
  5. 根据权利要求1所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述位于中间基片集成波导矩形腔(51)与位于右侧基片集成波导圆形腔(52)的耦合位置位于TE101模场强较强、TE201模场强较弱的右侧共面波导(10)区域；位于中间基片集成波导矩形腔(51)与位于左侧基片集成波导圆形腔(53)的耦合位置位于TE201模场强较强、TE101模场强较弱的左侧共面波导(9)区域；利用位于中间基片集成波导矩形腔(51)的TE201模和TE101模的模式正交性，实现了两个通道之间较好的隔离度，并各产生一个传输极点以拓展带宽。
  6. 根据权利要求1所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工 器，其特征在于：所述双工器(5)的下通道由位于中间基片集成波导矩形腔(51)和位于右侧基片集成波导圆形(52)组成，双工器(5)上通道由位于中间基片集成波导矩形腔(51)和位于左侧基片集成波导圆形(53)组成；其中，下通道的多模耦合拓扑为位于中间基片集成波导矩形腔(51)的TE101模通过右侧共面波导(10)和位于右侧基片集成波导圆形(52)的两个TM110简并模耦合而成；上通道的多模耦合拓扑为位于中间基片集成波导矩形腔(51)的TE201模通过左侧共面波导(9)和位于左侧基片集成波导圆形(53)的两个TM110简并模耦合而成。
  7. 根据权利要求3所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述双工器(5)，其中第一类金属扰动通孔(7)包括位于右侧基片集成波导圆形腔(52)左侧的第一金属扰动通孔(71)和位于右侧基片集成波导圆形腔(52)右侧的第二金属扰动通孔(72)，该两金属扰动通孔相对基片集成波导圆形腔(52)的圆心对称位于馈线(13)与右侧共面波导(10)之间。
  8. 根据权利要求3所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述双工器(5)，其中，第二类金属扰动通孔(8)包括位于右侧基片集成波导圆形腔(52)上侧的第三金属扰动通孔(81)和位于右侧基片集成波导圆形腔(52)下侧的第四金属扰动通孔(82)，且该两金属扰动通孔相对位于右侧基片集成波导圆形腔(52)的圆心对称设置。
  9. 根据权利要求4所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述双工器(5)，其中，第三类金属扰动通孔(6)包括位于左侧基片集成波导圆形腔(53)左侧的第五金属扰动通孔(61)和位于左侧基片集成波导圆形腔(53)右侧的第六金属扰动通孔(62)，该两金属扰动通孔相对位于基片集成波导圆形腔(53)的圆心对称设置在馈线(12)与左侧共面波导(9)外侧。
  10. 根据权利要求5所述的一种矩形腔和圆形腔多模耦合的基片集成波导双工器，其特征在于：所述输入微带线(11)，上通道输出微带线(12)和下通道输出微带线(13)均为50欧姆。
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