WO2024014567A1 - Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur, et procédé pour sa fabrication - Google Patents

Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur, et procédé pour sa fabrication Download PDF

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Publication number
WO2024014567A1
WO2024014567A1 PCT/KR2022/010095 KR2022010095W WO2024014567A1 WO 2024014567 A1 WO2024014567 A1 WO 2024014567A1 KR 2022010095 W KR2022010095 W KR 2022010095W WO 2024014567 A1 WO2024014567 A1 WO 2024014567A1
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Prior art keywords
layer
display device
color conversion
color
light
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PCT/KR2022/010095
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English (en)
Korean (ko)
Inventor
유영길
백승미
Original Assignee
엘지전자 주식회사
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Priority to PCT/KR2022/010095 priority Critical patent/WO2024014567A1/fr
Publication of WO2024014567A1 publication Critical patent/WO2024014567A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the present invention is applicable to display device-related technical fields, for example, relates to a display device using micro LED (Light Emitting Diode).
  • micro LED Light Emitting Diode
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitting Diodes
  • LED Light Emitting Diode
  • GaAsP compound semiconductor in 1962, it has been followed by GaP:N series green LED. It has been used as a light source for display images in electronic devices, including information and communication devices.
  • LEDs light emitting diodes
  • This LED technology exhibits characteristics of low power, high brightness, and high reliability compared to other display devices/panels, and can also be applied to flexible devices. Therefore, it has been actively studied in recent years by research institutes and companies.
  • the subpixel configuration of a display device it can be implemented using a blue LED and a color conversion layer material together with the blue LED.
  • the light converted through the blue LED can increase the beam angle because the color conversion material causes light diffusion in the form of microspheres. Therefore, when applied to a display device that displays images or text, color interference (cross-talk) may occur.
  • a method of constructing a partition wall and printing quantum dots (QD), a nano color conversion material, through inkjet can also be considered.
  • QD quantum dots
  • a coffee ring effect occurs in subpixels after printing, making it difficult to obtain uniform light.
  • the size of the color conversion layer (color conversion layer) is reduced and the amount of color conversion coated on each subpixel is adjusted to be uniform.
  • color uniformity may deteriorate due to agglomeration of nano color conversion (quantum dots, QD).
  • the technical problem to be solved by the present invention is to provide a display device using a light emitting device that can improve color uniformity in a display device using a light emitting device and a method of manufacturing the same.
  • the present invention seeks to provide a display device using a light emitting device that can improve the color purity of light emitted from each unit subpixel area and a method of manufacturing the same.
  • the present invention seeks to provide a display device using a light emitting element that can prevent the coffee ring effect caused by agglomeration of materials forming a color conversion layer, and a method of manufacturing the same.
  • a display device using a light-emitting element in which the color conversion layer material is evenly coated within the partition forming the unit subpixel and the color-converted light is localized and emitted without mixing, thereby improving the color purity of the display; We would like to provide the manufacturing method.
  • the present invention includes: a substrate; a partition wall located on the substrate, defining a unit subpixel area, and having a multi-layer structure including different materials; a light emitting element installed within the unit subpixel to form each unit subpixel; a color conversion layer that converts the light emitted from the light emitting device into a color corresponding to each unit subpixel area; And it may include a color filter layer located on the color conversion layer.
  • At least a layer of the partition wall contacting the color conversion layer may include a hydrophilic material.
  • the hydrophilic material can alleviate the non-uniformity of the color conversion layer.
  • the barrier rib includes: a first barrier rib including a hydrophilic material; and a second barrier rib located on the first barrier rib and including a hydrophobic material.
  • the surface of the first partition may be coated with the hydrophilic material.
  • the surface of the second partition may be coated with the hydrophobic material.
  • At least a first layer of the partition located on a side of the light emitting device may include a hydrophilic material.
  • the color conversion layer may be located within the partitioned unit subpixel area.
  • the color filter layer may include a plurality of color filters corresponding to the color of each unit subpixel area.
  • a black matrix may be positioned between each color filter.
  • the present invention includes a wiring board; a partition located on the wiring board, defining a unit subpixel area, including different materials, and having at least two layers including a first layer and a second layer on the first layer; a light emitting element installed within the unit subpixel to form each unit subpixel; a color conversion layer that converts the light emitted from the light emitting device into a color corresponding to each unit subpixel area; and a color filter layer located on the color conversion layer, wherein at least the first layer of the partition wall located on a side of the light emitting device may include a hydrophilic material.
  • At least a layer of the partition wall contacting the color conversion layer may include the hydrophilic material.
  • the barrier rib includes: a first barrier rib including a hydrophilic material in the first layer; and a second partition wall including a hydrophobic material in the second layer.
  • color uniformity can be improved in a display device using a light-emitting element.
  • the color conversion layer material may be evenly coated within the partition wall forming the unit subpixel. Therefore, the occurrence of coffee ring, which is a phenomenon in which color conversion layer materials agglomerate, can be reduced.
  • the color purity of the display can be improved because the evenly converted light is localized and emitted without mixing with each other.
  • FIG. 1 is a cross-sectional view showing unit subpixel areas of a display device using a light-emitting device according to an embodiment of the present invention.
  • Figure 2 is a cross-sectional schematic diagram of a display device using a light-emitting element according to an embodiment of the present invention.
  • 3 to 10 are cross-sectional schematic diagrams showing each manufacturing step of a display device using a light-emitting device according to an embodiment of the present invention.
  • an element such as a layer, region or substrate is referred to as being “on” another component, it is to be understood that it may be present directly on the other element or that there may be intermediate elements in between. There will be.
  • the display device described in this specification is a concept that includes all display devices that display information using a unit pixel or a set of unit pixels. Therefore, it is not limited to finished products but can also be applied to parts.
  • a panel corresponding to a part of a digital TV also independently corresponds to a display device in this specification.
  • Finished products include mobile phones, smart phones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigation, Slate PCs, Tablet PCs, and Ultra This may include books, digital TVs, desktop computers, etc.
  • semiconductor light emitting devices mentioned in this specification include LEDs, micro LEDs, etc., and may be used interchangeably.
  • FIG. 1 is a cross-sectional view showing unit subpixel areas of a display device using a light-emitting device according to an embodiment of the present invention.
  • a display device using a semiconductor light emitting device may include a panel 100 in which subpixels are partitioned by a partition wall 110 having a multi-layer structure.
  • the unit subpixel area may include a red subpixel area 102, a green subpixel area 103, and a blue subpixel area 104.
  • the red subpixel area 102 may emit red light as a unit sub-pixel.
  • the green subpixel area 103 may emit green light as a unit sub-pixel.
  • the blue subpixel area 104 may emit blue light as a unit sub-pixel.
  • the red subpixel area 102, green subpixel area 103, and blue subpixel area 104 may form one pixel area 101.
  • the red subpixel area 102, the green subpixel area 103, and the blue subpixel area 104 may be arranged parallel to each other. Additionally, these unit pixel areas 102, 103, and 104 may have multiple polygonal shapes that are closely packed together. For example, these unit subpixel areas 102, 103, and 104 may form a rectangle or hexagon.
  • These multiple unit subpixel areas 102, 103, and 104 may be formed by the partition wall 110. That is, the partition wall 110 may define a plurality of polygonal unit subpixel areas. In this way, each unit subpixel area 102, 103, and 104 having a certain area may be divided by the partition wall 110.
  • a plurality of such unit subpixel areas 102, 103, and 104 may be formed on the substrate 150.
  • a thin film transistor (TFT; 151) is connected to this substrate 150 to implement an active matrix (AM) type display panel 100.
  • the substrate 150 may be a TFT substrate 150 on which the TFT layer 151 is formed.
  • the substrate 150 may be a passive matrix (PM) type substrate.
  • a wiring electrode (not shown) connected to the TFT layer 151 and an electrode pad connected to the wiring electrode may be located in the plurality of unit subpixel areas 102, 103, and 104.
  • the TFT layer 151 may be a wiring electrode layer 151 including a wiring electrode.
  • the substrate 150 may be a wiring board on which wiring electrodes are formed.
  • the TFT layer 151 will be described interchangeably with the wiring electrode layer 151.
  • the light emitting elements 120 forming the unit subpixel areas 102, 103, and 104 may be electrically connected to and installed on these wiring electrodes or electrode pads.
  • the light-emitting device 120 is a first light-emitting device 121 installed in each unit subpixel including the red subpixel region 102, the green subpixel region 103, and the blue subpixel region 104. , may include a second light-emitting device 122 and a third light-emitting device 123.
  • the first light-emitting device 121, the second light-emitting device 122, and the third light-emitting device 123 may all be blue light-emitting devices.
  • Color conversion layers 130 and 140 may be located on these blue light emitting devices.
  • the red color conversion layer 130 may be located on the first light emitting device 121 to form a red subpixel.
  • the green color conversion layer 140 may be located on the second light emitting device 122 to create green-red subpixels.
  • At least the layer 111 in contact with the color conversion layers 130 and 140 of the partition wall 110 having a multi-layer structure that partitions the plurality of subpixel areas 102, 103, and 104 may include a hydrophilic material.
  • at least the layer 111 located on the side of the light emitting device 120 of the partition wall 110 may include a hydrophilic material.
  • hydrophilic materials can alleviate the non-uniformity of the color conversion layers 130 and 140.
  • the color conversion layers 130 and 140 may be coated in a plurality of subpixel areas 102, 103, and 104 divided by the partition wall 110 and dried or cured to form a film. This hydrophilic material may be used to form a film.
  • the included layer 111 can alleviate or prevent heterogeneity caused by agglomeration of the color conversion layers 130 and 140. This will be described in detail later.
  • Such a partition wall 110 may include a first partition wall 111 forming a first layer and a second partition wall 112 located on the first layer forming a second layer.
  • This first partition wall 111 may include a hydrophilic material.
  • the entire first barrier rib 111 may be formed of a hydrophilic material, or the surface of the first barrier rib 111 may be coated with a hydrophilic material.
  • the second partition wall 112 may include a hydrophobic material.
  • the entire second barrier rib 112 may be formed of a hydrophilic material, or the surface of the second barrier rib 112 may be coated with a hydrophobic material.
  • the subpixel configuration of the display uses blue micro LEDs for blue and emits blue micro LEDs and color conversion materials (Green, Red) for red and green, thereby implementing green and red colors.
  • the light converted through the blue LED can increase the beam angle because the color conversion material causes light diffusion in the form of microspheres. Therefore, when applied to a display device that displays images or text, color interference (cross-talk) may occur.
  • a method of constructing a partition wall and printing quantum dots (QD), a nano color conversion material, through inkjet can also be considered.
  • QD quantum dots
  • a coffee ring effect occurs in subpixels after printing, making it difficult to obtain uniform light.
  • the size of the color conversion layer (color conversion layer) is reduced to uniformly adjust the amount of color conversion coated on each subpixel.
  • color uniformity may deteriorate due to agglomeration of nano color conversion (quantum dots, QD).
  • the color conversion layer 130 which has a thickness of approximately 10 to 20 ⁇ m for color conversion efficiency, 140) may be necessary. Therefore, it may be necessary to secure a corresponding thickness of the partition wall 110.
  • the upper may contain a hydrophobic material
  • the lower layer may be coated in two or more layers to contain a hydrophilic material.
  • the color conversion layer material is formed at the bottom of the barrier wall 110 due to the hydrophilic material.
  • the second layer 112 of the partition 110 since the second layer 112 of the partition 110 is coated with a hydrophobic material, the second layer 112 may not be coated on the side with a color conversion material. Accordingly, the occurrence of the coffee ring phenomenon, which is a phenomenon in which the color conversion layer material agglomerates at the edge of the second layer 112, can be reduced.
  • Figure 2 is a cross-sectional schematic diagram of a display device using a light-emitting element according to an embodiment of the present invention.
  • the display device includes a substrate 150, a partition wall 110 defining a plurality of unit subpixel areas 102, 103, and 104 on the substrate 150, and
  • the panel 100 can be configured to include a light emitting device 120 installed in each unit subpixel area 102, 103, and 104.
  • the unit subpixel areas 102, 103, and 104 may include a red subpixel area 102, a green subpixel area 103, and a blue subpixel area 104.
  • the light emitting device 120 may be a semiconductor light emitting diode (LED).
  • a light emitting device 120 that emits blue light or ultraviolet rays may be installed in each unit subpixel area 102, 103, and 104.
  • blue light-emitting devices 121, 122, and 123 may be installed in each unit subpixel area 102, 103, and 104.
  • Color conversion layers 130, 140, and 141 are located on these blue light-emitting devices 121, 122, and 123, and can be converted into colors corresponding to each unit pixel area 102, 103, and 104.
  • the semiconductor light emitting devices 121, 122, and 123 forming such unit subpixels may be micro LEDs having a size of several to hundreds of microns.
  • the semiconductor light emitting devices 121, 122, and 123 may be mini LEDs that are dozens of times the size of micro LEDs.
  • the mini LED may be different from the micro LED in terms of size and stacking structure.
  • the mini LED may further include a growth substrate for growing a semiconductor layer.
  • the size of the micro LEDs may be approximately 20 ⁇ m or less.
  • the red light-emitting device 121 may be installed in the red pixel area 102
  • the green light-emitting device 122 may be installed in the green pixel area 103
  • the blue pixel area 104 A blue light emitting device 123 may be installed.
  • the display device may include light emitting elements 120 (121, 122, 123) installed within the unit subpixel areas 102, 103, and 104 to form each unit subpixel.
  • the substrate 150 may be a wiring board on which wiring electrodes (not shown) are arranged. At this time, each light emitting element 121, 122, and 123 may be electrically connected to these wiring electrodes. Additionally, each light emitting element 121, 122, and 123 is electrically connected to a common electrode (not shown) and can be turned on by current/voltage applied through the wiring electrode and the common electrode.
  • Each unit pixel area (102, 103, 104) has a color conversion layer (color A color conversion layer (130, 140) may be provided.
  • the color conversion layers 130 and 140 may be provided in at least some of the unit pixel areas 102, 103, and 104.
  • the red color conversion layer 130 may be located in the red subpixel area 102
  • the green color conversion layer 140 may be located in the green subpixel area 103
  • a light diffuser 141 may be provided in the blue subpixel area 104.
  • This light diffuser 141 may also be a type of color conversion layer. That is, the color conversion layers 130, 140, and 141 may be located in each unit pixel area 102, 103, and 104.
  • the red color conversion layer 130 includes a red inorganic phosphor or red QD (Quantum Dot) that converts blue light corresponding to a wavelength of 400 to 480 nm into a main wavelength band of 600 to 750 nm. It can be included.
  • red QD Quantum Dot
  • the green color conversion layer 140 includes a green inorganic phosphor or green QD (Quantum Dot) that converts blue light corresponding to a wavelength of 400 to 480 nm into a main wavelength band of 490 to 600 nm. It can be included.
  • a green inorganic phosphor or green QD Quantum Dot
  • the light diffuser 141 included in the blue subpixel area 104 may include a metal oxide, for example, TiO 2 .
  • the color conversion layers 130, 140, and 141 are filled in each unit subpixel area 102, 103, and 104.
  • the color conversion layers 130, 140, and 141 are positioned to cover each semiconductor light emitting device 121, 122, and 123. can do.
  • a color filter layer 200 may be located on the panel 100. This color filter layer 200 may be located on the color conversion layers 130, 140, and 141.
  • This color filter layer 200 may include a plurality of color filters 210, 220, and 230 corresponding to the color of each unit subpixel area (102, 103, and 104).
  • the red color filter 210 may be located on the red subpixel area 102
  • the green color filter 220 may be located on the green subpixel area 103
  • the blue subpixel area 104 A blue color filter 230 may be located on the image.
  • the light emitted from the unit subpixel areas (102, 103, and 104) can be converted into each color (R, G, and B) by the color conversion layer (130, 140, and 141), and converted into each of these colors.
  • a black matrix 250 may be located between each color filter 210, 220, and 230. Additionally, each color filter 210, 220, and 230 may be located on the base layer 240.
  • the base layer 240 may include a glass substrate.
  • the color filter layer 200 may be attached to the partition wall 110 using an adhesive layer 260 .
  • the adhesive layer 260 may be attached to the second partition wall 112 containing a hydrophobic material.
  • the partition wall 110 may function as a black matrix.
  • the partition wall 110 may be formed of a dark-colored material such as black, or may include a dark-colored material layer.
  • the second partition 112 including a hydrophobic material may be visible from the outside of the display, so it may be formed of a dark-colored material such as black, or may include a dark-colored material layer.
  • this structure of the partition 110 improves the straightness of the light emitted from each unit subpixel area 102, 103, and 104, so that the light emitted from each light emitting device 121, 122, and 123 is localized without mixing with each other. Since it is localized and released and reaches the color filter layer 200, color purity can be improved.
  • 3 to 10 are cross-sectional schematic diagrams showing each manufacturing step of a display device using a light-emitting device according to an embodiment of the present invention.
  • light emitting elements 121 capable of forming a plurality of subpixels are placed on a substrate 150 including the wiring electrode layer 151 or the TFT layer 151. It can be prepared to be electrically connected to (151).
  • the light emitting device 121 may be a blue light emitting diode (LED). In this way, pixels that emit red, green, and blue light can be formed using blue light-emitting devices.
  • LED blue light emitting diode
  • a thin film transistor (TFT) 151 is connected to the substrate 150 to implement an active matrix (AM) type display panel 100.
  • the substrate 150 may be a TFT substrate 150 on which the TFT layer 151 is formed.
  • the substrate 150 may be a passive matrix (PM) type substrate.
  • a first layer 113 of a hydrophilic material for forming the first partition 111 may be formed on the substrate (wiring substrate) 150 on which the light emitting device 121 is installed. Afterwards, a drying process of the formed first layer 113 of the hydrophilic material may be performed.
  • a second layer 114 of a hydrophobic material may be formed on the first layer 113 of a hydrophilic material. Afterwards, a drying process of the formed second layer 114 of the hydrophobic material may be performed.
  • an exposure process of irradiating ultraviolet light, etc. to the portion to be formed as the partition wall 110 in the first layer 113 and the second layer 114 is performed using the mask layer 300. can do.
  • exposure may be performed on a portion of the sequentially formed first layer 113 of a hydrophilic material and a second layer 114 of a hydrophobic material that will be formed as the partition wall 110 without being removed.
  • first barrier rib 111 including a hydrophilic material
  • second barrier rib 112 including a hydrophobic material
  • a partition wall 110 including can be formed.
  • the partition wall 110 may be formed through a process of exposing and developing the portion to be removed among the first layer 113 of the hydrophilic material and the second layer 114 of the hydrophobic material.
  • first layer 113 of the hydrophilic material and the second layer 114 of the hydrophobic material are exposed and developed to form a partition 110 with a non-polar material instead, and the first layer ( 113) is coated with a hydrophilic material and the second layer 114 is coated with a hydrophobic material to form a partition 110 including a first partition 111 containing a hydrophilic material and a second partition 112 containing a hydrophobic material. may form.
  • a separate hydrophilic treatment may be performed on the portion of the partition wall 110 to be coated with the hydrophilic material.
  • a separate hydrophobic treatment may be performed on the portion of the partition wall 110 to be coated with a hydrophobic material.
  • color conversion layers 130, 140, and 141 may be formed in each subpixel area 102, 103, and 104 partitioned by the partition wall 110.
  • the red color conversion layer 130 can be formed in the red subpixel 102.
  • a green color conversion layer 140 may be formed in the green subpixel 103.
  • a light diffusion agent 141 may be formed in the blue subpixel 104.
  • the red color conversion layer 130 may include a red inorganic phosphor or a red quantum dot (QD). That is, the red color conversion layer 130 can be formed using a red inorganic phosphor or red QD (Quantum Dot).
  • QD red quantum dot
  • the green color conversion layer 140 may include a green inorganic phosphor or a green QD (Quantum Dot). That is, the green color conversion layer 140 can be formed using a green inorganic phosphor or green QD (Quantum Dot).
  • the panel 100 or the lower plate of the display device can be formed.
  • a plurality of color filters 210, 220, and 230 corresponding to the colors of the unit subpixel areas 102, 103, and 104 may be formed on the base layer 240, such as a glass substrate.
  • a red color filter 210 may be located on the red subpixel area 102
  • a green color filter 220 may be located on the green subpixel area 103
  • a blue subpixel area may be located on the area 104.
  • a black matrix 250 may be formed between each color filter 210, 220, and 230.
  • the top plate of the display device to be located on the panel 100 or including the top of the panel 10 can be formed.
  • a display device can be formed by bonding the upper and lower plates of HyungseoODin in this way.
  • the color filter layer 200 forming the upper plate may be attached to the partition wall 110 of the lower plate by the adhesive layer 260.
  • a display device using a semiconductor light-emitting device such as micro LED.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

La présente invention peut s'appliquer aux domaines techniques liés à un dispositif d'affichage et concerne, par exemple, un dispositif d'affichage utilisant une micro-diode électroluminescente (DEL). La présente invention peut comprendre : un substrat; des parois de séparation qui sont disposées sur le substrat pour définir des zones de sous-pixel unitaires et ont chacune une structure multicouche comprenant différents matériaux; des éléments électroluminescents dont chacun est disposé dans chacune des zones de sous-pixel unitaires pour former chaque sous-pixel unitaire; des couches de conversion de couleur dont chacune convertit la lumière émise par chacun des éléments électroluminescents en une couleur correspondant à chacune des zones de sous-pixel unitaires; et des couches de filtre coloré dont chacune est disposée sur chacune des couches de conversion de couleur.
PCT/KR2022/010095 2022-07-12 2022-07-12 Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur, et procédé pour sa fabrication WO2024014567A1 (fr)

Priority Applications (1)

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PCT/KR2022/010095 WO2024014567A1 (fr) 2022-07-12 2022-07-12 Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur, et procédé pour sa fabrication

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PCT/KR2022/010095 WO2024014567A1 (fr) 2022-07-12 2022-07-12 Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur, et procédé pour sa fabrication

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KR101586673B1 (ko) * 2006-12-22 2016-01-20 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
JP2019102337A (ja) * 2017-12-05 2019-06-24 キヤノン株式会社 有機ｅｌ素子及びその製造方法
KR20200016424A (ko) * 2018-08-06 2020-02-17 삼성디스플레이 주식회사 표시 장치
KR20210090087A (ko) * 2020-01-09 2021-07-19 삼성전자주식회사 발광 소자 및 표시 장치
KR20220046043A (ko) * 2020-10-06 2022-04-14 삼성디스플레이 주식회사 표시패널 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101586673B1 (ko) * 2006-12-22 2016-01-20 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
JP2019102337A (ja) * 2017-12-05 2019-06-24 キヤノン株式会社 有機ｅｌ素子及びその製造方法
KR20200016424A (ko) * 2018-08-06 2020-02-17 삼성디스플레이 주식회사 표시 장치
KR20210090087A (ko) * 2020-01-09 2021-07-19 삼성전자주식회사 발광 소자 및 표시 장치
KR20220046043A (ko) * 2020-10-06 2022-04-14 삼성디스플레이 주식회사 표시패널 및 그 제조방법

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