WO2024008472A3 - Procédé permettant le fonctionnement d'un processus de dépôt chimique en phase vapeur - Google Patents

Procédé permettant le fonctionnement d'un processus de dépôt chimique en phase vapeur Download PDF

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Publication number
WO2024008472A3
WO2024008472A3 PCT/EP2023/067035 EP2023067035W WO2024008472A3 WO 2024008472 A3 WO2024008472 A3 WO 2024008472A3 EP 2023067035 W EP2023067035 W EP 2023067035W WO 2024008472 A3 WO2024008472 A3 WO 2024008472A3
Authority
WO
WIPO (PCT)
Prior art keywords
molecules
precursor
reaction chamber
diffusion additive
vapor deposition
Prior art date
Application number
PCT/EP2023/067035
Other languages
English (en)
Other versions
WO2024008472A2 (fr
Inventor
Arun HARIDAS CHOOLAKKAL
Henrik Pedersen
Jens Birch
Original Assignee
Canatu Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canatu Oy filed Critical Canatu Oy
Publication of WO2024008472A2 publication Critical patent/WO2024008472A2/fr
Publication of WO2024008472A3 publication Critical patent/WO2024008472A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Procédé permettant le fonctionnement d'un processus de dépôt chimique en phase vapeur (CVD), consistant à fournir un substrat (20) dans une zone réactionnelle (10) d'une chambre réactionnelle (1), à fournir au moins un flux de gaz précurseur dans la chambre réactionnelle (1), le gaz précurseur comprenant des molécules précurseurs, à chauffer la chambre réactionnelle (1) à une température qui est supérieure à une température de début de réaction des molécules précurseurs, et à fournir au moins un gaz additif de diffusion inerte dans la chambre réactionnelle (1), l'additif de diffusion inerte comprenant des molécules d'additif de diffusion inerte, les molécules d'additif de diffusion inerte ayant une masse moléculaire supérieure à celle des molécules précurseurs, et la pression partielle du gaz additif de diffusion inerte étant supérieure à la pression partielle du gaz précurseur. L'invention concerne en outre une couche de protection (40, 40', 40'') appliquée sur un substrat (20) ayant au moins une caractéristique de facteur de forme élevé.
PCT/EP2023/067035 2022-07-04 2023-06-22 Procédé permettant le fonctionnement d'un processus de dépôt chimique en phase vapeur WO2024008472A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE2250842-8 2022-07-04
SE2250842A SE2250842A1 (en) 2022-07-04 2022-07-04 A method for operating a chemical vapor deposition process

Publications (2)

Publication Number Publication Date
WO2024008472A2 WO2024008472A2 (fr) 2024-01-11
WO2024008472A3 true WO2024008472A3 (fr) 2024-02-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/067035 WO2024008472A2 (fr) 2022-07-04 2023-06-22 Procédé permettant le fonctionnement d'un processus de dépôt chimique en phase vapeur

Country Status (3)

Country Link
SE (1) SE2250842A1 (fr)
TW (1) TW202417667A (fr)
WO (1) WO2024008472A2 (fr)

Citations (1)

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US6924223B2 (en) * 2003-09-30 2005-08-02 Tokyo Electron Limited Method of forming a metal layer using an intermittent precursor gas flow process
US7273811B2 (en) * 2005-06-27 2007-09-25 The Regents Of The University Of California Method for chemical vapor deposition in high aspect ratio spaces
US7482269B2 (en) * 2005-09-28 2009-01-27 Tokyo Electron Limited Method for controlling the step coverage of a ruthenium layer on a patterned substrate
US10256142B2 (en) * 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200027725A1 (en) * 2018-07-20 2020-01-23 Lam Research Corporation Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films

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DENG BING ET AL: "Toward Mass Production of CVD Graphene Films", ADVANCED MATERIALS, vol. 31, no. 9, 16 September 2018 (2018-09-16), DE, pages 1800996, XP055974272, ISSN: 0935-9648, Retrieved from the Internet <URL:https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadma.201800996> [retrieved on 20230915], DOI: 10.1002/adma.201800996 *
IWAMOTO YOSHINAO ET AL: "Deposition phenomena of diamond-like carbon coating on inner surface of circular metal tube by nanopulse plasma chemical vapor deposition", DIAMOND AND RELATED MATERIALS, ELSEVIER SCIENCE PUBLISHERS , AMSTERDAM, NL, vol. 121, 15 December 2021 (2021-12-15), XP086924793, ISSN: 0925-9635, [retrieved on 20211215], DOI: 10.1016/J.DIAMOND.2021.108749 *
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Also Published As

Publication number Publication date
TW202417667A (zh) 2024-05-01
SE2250842A1 (en) 2024-01-05
WO2024008472A2 (fr) 2024-01-11

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