WO2024000285A1 - 半导体基板加热装置、半导体设备及控温方法 - Google Patents

半导体基板加热装置、半导体设备及控温方法 Download PDF

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Publication number
WO2024000285A1
WO2024000285A1 PCT/CN2022/102414 CN2022102414W WO2024000285A1 WO 2024000285 A1 WO2024000285 A1 WO 2024000285A1 CN 2022102414 W CN2022102414 W CN 2022102414W WO 2024000285 A1 WO2024000285 A1 WO 2024000285A1
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WIPO (PCT)
Prior art keywords
temperature
compensation
control
semiconductor substrate
heating
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PCT/CN2022/102414
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English (en)
French (fr)
Inventor
孙元斌
陈兴隆
姜云鹤
韩禹
Original Assignee
沈阳芯源微电子设备股份有限公司
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Priority to PCT/CN2022/102414 priority Critical patent/WO2024000285A1/zh
Priority to US17/919,046 priority patent/US20240213080A1/en
Publication of WO2024000285A1 publication Critical patent/WO2024000285A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2213/00—Aspects relating both to resistive heating and to induction heating, covered by H05B3/00 and H05B6/00
    • H05B2213/07—Heating plates with temperature control means

Definitions

  • the present invention relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor substrate heating device, semiconductor equipment and a temperature control method.
  • the object of the present invention is to provide a semiconductor substrate heating device, a semiconductor device including the semiconductor substrate heating device, and a temperature control method for the semiconductor device, which can effectively control the temperature of the semiconductor substrate with as little manufacturing and maintenance costs as possible. Uniformity.
  • the semiconductor substrate heating device of the present invention includes:
  • the main heating part includes a heating plate disposed in the heating cavity, and the bottom surface of the heating plate includes at least one temperature control compensation area;
  • a compensation control part is provided in the heating cavity, and the top surface of the compensation control part is adjacent to the bottom surface of the heating plate;
  • At least one temperature compensation unit is disposed between the heating plate and the compensation control part and is communicatively connected to the compensation control part;
  • the temperature compensation unit is provided corresponding to the temperature control compensation area to perform temperature compensation adjustment on the temperature control compensation area under the control of the compensation control part.
  • the beneficial effect of the semiconductor substrate heating device of the present invention is that a compensation control part and several temperature compensation units are provided in the heating cavity of the semiconductor substrate heating device, and the top surface of the compensation control part and the bottom surface of the heating plate are Adjacent, a number of temperature compensation units arranged between the heating plate and the compensation control part and communicatively connected to the compensation control part are arranged in one-to-one correspondence with a number of temperature control compensation areas provided on the bottom surface of the heating plate, thereby avoiding
  • the complex outlet design can perform temperature compensation adjustment on the temperature control compensation area under the control of the compensation control unit, thereby effectively controlling the temperature uniformity of the semiconductor substrate at the lowest possible manufacturing and maintenance costs.
  • the temperature compensation unit includes an auxiliary temperature control part communicatively connected to the compensation control part, and the distance between the top of the auxiliary temperature control part and the corresponding temperature control compensation area is greater than or equal to 0.
  • the auxiliary temperature adjustment part includes a heat conduction element or a refrigeration element.
  • the temperature compensation unit further includes a fixing part connected to the auxiliary temperature regulating part, and the auxiliary temperature regulating part is fixed to the corresponding temperature control compensation area through the fixing part.
  • the semiconductor substrate heating device further includes a partition plate provided between the main heating part and the compensation control part, and the temperature compensation unit is provided on the partition plate.
  • the constituent material of the partition plate includes a heat insulating material.
  • the number of the partition plates is at least 2, and the temperature compensation unit is sandwiched between adjacent partition plates.
  • the temperature compensation unit further includes a support portion provided at the bottom of the auxiliary temperature adjustment portion, and an elastic portion provided in the support portion.
  • the support portion is provided on the partition plate, and the elastic portion Under the action of the support part, a force is exerted on the auxiliary temperature control part in the direction corresponding to the temperature control compensation area to adjust the distance between the top end of the auxiliary temperature control part and the corresponding temperature control compensation area. distance.
  • the support part includes an inner support part supporting the auxiliary temperature regulating part and an outer support part surrounding the inner support part, and the outer support part between the inner support part outer wall and the outer support part outer wall There is a spacing between them.
  • one end of the elastic part is disposed inside the outer support part, and the other end is in contact with the bottom of the inner support part.
  • the elastic part is surrounding the bottom of the inner support part and in contact with the partition plate.
  • the inner support portion is provided with lead holes allowing lead wires to pass through.
  • the outer support portion is provided with lead holes allowing lead wires to pass through.
  • the main heating part further includes a main control part for temperature control, and the compensation control part is communicatively connected to the main control part to perform the temperature compensation adjustment under the control of the main control part.
  • the top surface of the heating plate includes a substrate contact area
  • the bottom surface of the heating plate includes a bottom control area corresponding to the substrate contact area
  • the temperature control compensation area is within the bottom control area. any area.
  • a semiconductor device of the present invention includes the semiconductor substrate heating device.
  • the semiconductor device further includes a temperature calibration part, the main heating part also includes a main control part, the temperature calibration part is in contact with the heating surface of the heating plate in the semiconductor substrate heating device to obtain and feedback temperature calibration information, so The main control part is arranged outside the heating cavity and is communicatively connected to at least one of the compensation control part and the temperature calibration part.
  • the temperature control method of semiconductor equipment according to the present invention includes the following steps:
  • S0 Provide the semiconductor device, which includes a heating cavity, a main heating part, a compensation control part and at least one temperature compensation unit;
  • the compensation control unit drives at least one of the temperature compensation units to perform temperature compensation adjustment on the heating plate of the main heating unit.
  • Figure 1 is a partial structural schematic diagram of a semiconductor substrate heating device according to an embodiment of the present invention.
  • Figure 2 is a partial structural schematic diagram of another semiconductor substrate heating device according to an embodiment of the present invention.
  • FIG. 3 is an enlarged structural schematic diagram of part A shown in Figure 2;
  • Figure 4 is a schematic structural diagram of a temperature compensation unit according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in Figure 4.
  • FIG. 6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention.
  • Figure 7 is a schematic diagram of the working state of the temperature compensation unit shown in Figure 6 in the heating cavity;
  • FIG. 8 is a schematic diagram of the working state of a semiconductor device according to an embodiment of the present invention.
  • Embodiments of the present invention provide a semiconductor substrate heating device that can improve the uniformity of temperature control of the semiconductor substrate with as little manufacturing and maintenance costs as possible.
  • the semiconductor substrate heating device includes a heating cavity, a main heating part, a compensation control part, and at least one temperature compensation unit.
  • the main heating part includes a main control part, a heating plate and a main heating unit provided on the heating plate, and the main control part is communicatively connected to the main heating unit.
  • the main control part is used for temperature control.
  • the main control unit controls the temperature of the main heating unit, and the main heating unit causes the heating surface of the heating plate to generate heat.
  • the semiconductor substrate is placed toward the heating surface of the heating plate. Heat is transferred toward the semiconductor substrate.
  • FIG. 1 is a partial structural schematic diagram of a semiconductor substrate heating device according to an embodiment of the present invention.
  • a heating plate 11 in the semiconductor substrate heating device 1 , a heating plate 11 , at least one temperature compensation unit 12 and a compensation control part 13 are provided in a heating cavity (not shown in the figure).
  • the bottom surface of the heating plate 11 includes at least one temperature control compensation area.
  • the top surface of the heating plate includes a substrate contact area
  • the bottom surface of the heating plate includes a bottom control area corresponding to the substrate contact area
  • the temperature control compensation area is within the bottom control area. any area.
  • the specific range of the temperature control compensation area and the distance between adjacent control compensation areas are determined by the structural performance, process requirements and installation conditions of the heating plate 11 itself.
  • several of the temperature control compensation areas are distributed in an array relative to the center of the bottom surface control area.
  • Specific array distribution types include, but are not limited to, circular arrays and rectangular arrays.
  • the top surface of the compensation control part 13 is adjacent to the bottom surface of the heating plate 11 , that is, there is an area between the top surface of the compensation control part 13 and the bottom surface of the heating plate 11 . became a cavity area.
  • At least one temperature compensation unit 12 is disposed in the area between the heating plate 11 and the compensation control unit 13 and is communicatively connected to the compensation control unit 13 .
  • the temperature compensation unit 12 is provided corresponding to the temperature control compensation area to perform temperature compensation adjustment on the temperature control compensation area under the control of the compensation control part 13 .
  • the compensation control part 13 is communicatively connected to the main control part of the main heating part to perform the temperature compensation adjustment under the control of the main control part.
  • the main control part is disposed outside the heating cavity, and at least one temperature compensation unit 12 is disposed in an area between the heating plate 11 and the compensation control part 13 and is communicatively connected to the temperature compensation unit 12 .
  • the compensation control part 13 allows the wiring in the heating cavity to be concentrated between the heating plate 11 and the compensation control part 13, avoiding complicated wiring design and facilitating the disassembly, assembly and maintenance of the semiconductor substrate heating device.
  • the temperature compensation adjustment of the heating plate 11 can be realized by controlling the compensation control part 13, further avoiding complexity.
  • the outlet design facilitates the disassembly, assembly and maintenance of the semiconductor substrate heating device.
  • the compensation control part 13 is a circuit board, and a control circuit is provided on the surface of the circuit board to control at least one of the temperature compensation units 12 .
  • the specific implementation method of control can be synchronous control or independent control.
  • the compensation control unit 13 includes a control board composed of a printed circuit board (PCB) and functional devices provided on the PCB board.
  • PCB printed circuit board
  • the compensation control part 13 also includes a heat insulation structure that encapsulates the control board.
  • the heat insulation structure can cover at least one surface of the control board, such as the bottom surface facing the heating plate 11 .
  • the top surface of the control part does not affect the electrical connection between the compensation control part 13 and the temperature compensation unit 12, so as to prevent the compensation control part 13 from being affected by heat and affecting the function realization.
  • the main control unit is a host computer.
  • the temperature compensation unit 12 includes an auxiliary temperature regulation part 121 communicatively connected to the compensation control part 13 .
  • the auxiliary temperature control part 121 includes a heat conduction element or a cooling element to heat or cool the temperature control compensation area corresponding to the bottom surface of the heating plate 11 .
  • auxiliary temperature control part 121 there is a contact interaction between the auxiliary temperature control part 121 and the heating plate 11 , that is, the top end of the auxiliary temperature control part 121 and the corresponding temperature control compensation area (not labeled in the figure) ) is equal to 0, so that the top end of the auxiliary temperature control part 121 is in contact with the temperature control compensation area (not labeled in the figure).
  • the temperature compensation unit 12 further includes a fixing part connected to the auxiliary temperature regulating part 121, and the auxiliary temperature regulating part 121 is fixed to the corresponding temperature control compensation area through the fixing part.
  • the thermal conductive element of the auxiliary temperature regulating part 121 is a ceramic heating plate.
  • the refrigeration element of the auxiliary temperature regulating part 121 is a semiconductor refrigeration chip.
  • the fixing part is made of high-temperature resistant adhesive.
  • the auxiliary temperature regulating part 121 is a small air supply component.
  • the small air supply component is configured to inject clean refrigerant gas into the corresponding temperature control compensation area under the control of the compensation control part 13 .
  • the small air supply assembly includes a gas circulation pipeline provided corresponding to each of the temperature control compensation areas, and the small air supply assembly is configured to pass through the temperature control section 13 under the control of the compensation control part 13 .
  • the gas circulation pipeline allows clean refrigerant gas to circulate in the gas circulation pipeline to cool the corresponding temperature control compensation area.
  • the auxiliary temperature regulating part 121 is a small liquid supply component.
  • the small liquid supply assembly includes a liquid circulation pipeline corresponding to each of the temperature control compensation areas, and the small liquid supply assembly is configured to enable heating under the control of the compensation control part 13 The liquid circulates in the liquid circulation pipeline to heat the corresponding temperature control compensation area.
  • FIG. 2 is a partial structural schematic diagram of another semiconductor substrate heating device according to an embodiment of the present invention.
  • FIG. 3 is an enlarged structural schematic diagram of part A shown in FIG. 2 .
  • the temperature compensation unit 12 is suspended between the heating plate 11 and the compensation control part 13 so that the top end of the auxiliary temperature adjustment part 121 is in contact with the corresponding position.
  • the distance between the temperature control compensation areas is greater than 0. There is a non-contact interaction between the auxiliary temperature regulating part 121 and the heating plate 11 .
  • the heating element of the auxiliary temperature regulating part 121 is an LED lamp or a halogen lamp.
  • the semiconductor substrate heating device further includes a partition plate disposed in the heating cavity.
  • a partition plate 21 is provided on the heating plate 11 and the compensation control part 13 and the temperature compensation unit 12 is provided on the partition plate 21 .
  • the component material of the partition plate 21 includes a thermal insulation material, which is beneficial to maintaining the heat transfer effect of the heating plate 11 .
  • the number of the partition plates 21 is at least 2, and the temperature compensation unit 12 is sandwiched between adjacent partition plates 21 .
  • the partition plate 21 includes an adjacent first partition plate 31 and a second partition plate 32 , and the temperature compensation unit 12 is clamped between the first partition plate 31 and the second partition plate 32 . between plates 32.
  • FIG. 4 is a schematic structural diagram of a temperature compensation unit according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the internal structure of the temperature compensation unit shown in FIG. 4 .
  • the temperature compensation unit 12 further includes a support part 41 provided at the bottom of the auxiliary temperature regulating part 121 , and an elastic part 51 provided in the support part 41 .
  • the support part 41 is provided on the partition plate 21 , and the elastic part 51 exerts a force on the auxiliary temperature control part 121 toward the corresponding temperature control compensation area (not labeled in the figure) under the action of the support part 41 ) direction to adjust the distance between the top end of the auxiliary temperature control part 121 and the corresponding temperature control compensation area (not marked in the figure).
  • the elastic part 51 exerts a force on the auxiliary temperature control part 121 in a direction corresponding to the temperature control compensation area (not labeled in the figure) under the action of the support part 41 to make the auxiliary temperature control part 121 .
  • the top end of the temperature control part 121 is in contact with the corresponding temperature control compensation area (not shown in the figure).
  • the support part 41 includes an inner support part 411 that supports the auxiliary temperature regulating part 121 and an outer support part 412 surrounding the inner support part 411 . There is a gap between the outer side wall of the support portion 411 and the outer side wall of the outer support portion 412 .
  • one end of the elastic part 51 is disposed inside the outer support part 412 , and the other end is in contact with the bottom of the inner support part 411 .
  • one end of the elastic part 51 is fixed in the outer support part, and the other end is connected to the bottom of the inner support part 411.
  • the elastic part 51 is in a compressed working state, so as to exert a force on the auxiliary temperature regulating part 121 in a direction corresponding to the temperature control compensation area (not shown in the figure), so that the top end of the auxiliary temperature regulating part 121 is in contact with the corresponding temperature control area.
  • the temperature control compensation area (not marked in the figure) is fit.
  • the top of the outer support part 412 includes a recessed structure 52
  • the auxiliary temperature regulating part 121 is fixedly provided on the top of the inner support part 411 , and at least a part of the inner support part 411 is received in Within the recessed structure 52, the recessed structure 52 limits the movement range of the inner support part 411 in the radial direction, so that the auxiliary temperature regulating part 121 can effectively act on the corresponding temperature control compensation area (Fig. not marked).
  • the inner support portion 411 is provided with a first lead hole 53 that allows leads to pass through
  • the outer support portion 412 is provided with a second lead hole that allows the leads to pass through. 54.
  • the first lead hole 53 and the second lead hole 54 are connected
  • the elastic part 51 is a hollow structure, and the two ends are connected with the first lead hole 53 and the second lead hole 54, so that the elastic part 51 is disposed at the desired position.
  • the communication lead (not labeled in the figure) of the compensation control part 13 can be electrically connected to the auxiliary temperature regulating part 121 through the second lead hole 54 , the elastic part 51 and the first lead hole 53 .
  • the elastic part 51 is a spring.
  • Figure 6 is a schematic diagram of the internal structure of another temperature compensation unit according to an embodiment of the present invention
  • Figure 7 is a schematic diagram of the working state of the temperature compensation unit shown in Figure 6 in the heating cavity.
  • the elastic part 51 is surrounding the bottom of the inner support part 411 and in contact with the partition plate 21 .
  • the outer support part 412 penetrates the rear bottom of the first partition plate 31 and contacts the second partition plate 32 , and the protruding structure 63 at the bottom of the outer support part 412 is clamped on the second partition plate 31 . between a partition plate 31 and the second partition plate 32 to realize the detachable fixed connection of the outer support portion 412 on the partition plate 21 .
  • the bottom of the elastic portion 51 is in contact with the top of the second partition plate 32 .
  • the inner support part 411 includes a bottom protruding structure 61 , and the elastic part 51 is movably surrounded by the bottom protruding structure 61 .
  • the elastic part 51 is in a compressed working state, so as to exert a force on the auxiliary temperature regulating part 121 in a direction corresponding to the temperature control compensation area (not shown in the figure), so that the top end of the auxiliary temperature regulating part 121 is in contact with the corresponding temperature control area.
  • the temperature control compensation area (not marked in the figure) is fit.
  • the inner support portion 411 includes a top protruding structure 62, the top of the outer support portion 412 is surrounded by the top protruding structure 62, and the top protrusion
  • the structure 62 defines the range of movement of the outer support 412 in the axial direction.
  • the communication leads (not labeled in the figure) provided in the compensation control part 13 can pass through the first lead holes 53 opened in the inner support part 411 and the auxiliary The temperature control part 121 is electrically connected.
  • FIG. 8 is a schematic diagram of the working state of a semiconductor device according to an embodiment of the present invention.
  • the semiconductor device shown in FIG. 8 includes the semiconductor substrate heating device 1 and the temperature calibration section 83 shown in FIG. 1 .
  • the outer wall 15 and the sealing plate 14 shown in FIG. 1 are the components of the accommodation cavity 82 shown in FIG. 8 .
  • the accommodation cavity 82 and the cover 81 form a heating cavity.
  • the temperature calibration part 83 is in contact with the top surface of the heating plate 11 to obtain and feedback temperature calibration information, and the main control part 86 is arranged outside the heating cavity (not labeled in the figure) , and communicatively connects at least one of the compensation control unit 13 and the temperature calibration unit 84 .
  • the temperature calibration part 83 includes a temperature measurement wafer 84 and a temperature sensor feedback device 85 that are connected by communication.
  • the temperature measuring wafer 84 is communicatively connected to the main control unit 86 through the temperature sensor feedback device 85 .
  • the temperature control method of the semiconductor device includes: driving at least one temperature compensation unit 12 through the compensation control part 13 to perform temperature compensation adjustment on the heating plate 11 .
  • the step of driving at least one temperature compensation unit 12 to perform temperature compensation adjustment on the heating plate 11 through the compensation control part 13 includes: controlling the compensation control part 13 through the main control part 86, Thus, at least one of the temperature compensation units 12 is driven to perform temperature compensation adjustment on the heating plate 11 .
  • the temperature measurement wafer 84 is placed on the top surface of the heating plate 11 , and the temperature measurement wafer 84 is placed on the top surface of the heating plate 11 . Control to raise the temperature of each temperature control area of the heating plate 11 so that the temperature of the temperature measuring wafer 84 reaches the target temperature.
  • the temperature sensor feedback device 85 feeds back the temperature values of each temperature measurement sampling point of the temperature measurement wafer 84 to the main control unit 86 .
  • the unit 86 compares the average temperature calculated based on the received temperature values of each temperature measurement sampling point with the target temperature to determine whether the temperature measurement wafer reaches the target temperature.
  • the temperature uniformity of the heating plate 11 is usually adjusted by regional control of the heating plate 11 .
  • the heating plate 11 is divided into seven zones, thirteen zones, fifteen zones, etc.
  • the partitions of the heating plate 11 cannot be infinitely large, and each partition includes several temperature measurement sampling points on the temperature measurement wafer 84 .
  • the main control unit 86 will control the first partition to increase the temperature.
  • the average temperature of some of the temperature measurement sampling points included in the first partition will be lower than the target temperature, but some of the temperature measurement sampling points
  • the temperature of the spot will be higher than the target temperature, and the temperature difference between it and the target temperature is most likely to be different from each other.
  • the temperature difference between the temperature and the target temperature is very likely to be different from each other. It can be seen that the temperature adjustment of a single zone can easily cause temperature unevenness within the entire range of the heating plate 11 .
  • the above-mentioned partition control method requires independent temperature control for each partition, which significantly increases the cost of the temperature control part, and the finer the partition, the higher the cost.
  • the temperature information of each temperature measurement area of the temperature measurement wafer 84 is obtained through the temperature sensor feedback device 85. According to these temperatures The information determines several temperature control compensation areas on the bottom surface of the heating plate 11 for temperature compensation adjustment. The compensation control part 13 is then controlled to drive the corresponding temperature compensation unit 12 to raise or lower the temperature to achieve the purpose of temperature compensation adjustment.

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Abstract

本发明提供了一种半导体基板加热装置，包括加热腔体、主加热部、补偿控制部和至少一个温度补偿单元。在所述半导体基板加热装置的加热腔体内设置补偿控制部和若干温度补偿单元，所述补偿控制部的顶面与所述加热板的底面对应设置，设置于所述加热板和所述补偿控制部之间并通信连接所述补偿控制部的若干温度补偿单元与所述加热板的底面的若干控温补偿区域一一对应设置，避免了复杂的出线设计，能够在所述补偿控制部的控制下对所述控温补偿区域进行温度补偿调节，从而在尽可能小的制造和维护成本下有效控制半导体基板的温度均匀性。

Description

半导体基板加热装置、半导体设备及控温方法 技术领域
本发明涉及半导体制造技术领域，尤其涉及半导体基板加热装置、半导体设备及控温方法。
技术背景
目前，在半导体基板加工过程中，需频繁使用基板烘烤设备。而加热烘烤工艺制程中，基板的温度均匀性对其工艺指标能否达到至关重要。目前现有技术，例如公开号为CN103792974A的中国专利申请采用了优化加热器的加热线路，并适当增加加热器的分区数量的技术方案来提高热板的温度均匀性。
但是，增加加热器分区数量会大幅度增大加热器的开发周期和研发成本支出，会大幅度增加温控部分的成本，同时占用更多安装硬件的空间且对加热器制造过程中管控要求更为严格，容易造成加热器成品率下降，进而转嫁为加热器成本增加。
通过增加分区优化加热线路这种方案，会产生更多的出线设计，使得走线更为复杂，增加加热器周边结构设计难度。
因此，有必要开发新型的半导体基板加热装置以解决现有技术存在的上述问题。
发明概要
本发明的目的在于一种半导体基板加热装置，包括所述半导体基板加热装置的半导体设备，以及所述半导体设备的控温方法，能够在尽可能小的制造和维护成本下有效控制半导体基板的温度均匀性。
为实现上述目的，本发明的半导体基板加热装置包括：
加热腔体；
主加热部，包括设置于所述加热腔体内的加热板，所述加热板的底面包括至少一个控温补偿区域；
补偿控制部，设置于所述加热腔体内，所述补偿控制部的顶面与所述加热板的底面相邻；
至少一个温度补偿单元，设置于所述加热板和所述补偿控制部之间，并通信连接所述补偿控制部；
所述温度补偿单元与所述控温补偿区域对应设置，以在所述补偿控制部的控制下对所述控温补偿区域进行温度补偿调节。
本发明的所述半导体基板加热装置的有益效果在于：在所述半导体基板加热装置的加热腔体内设置补偿控制部和若干温度补偿单元，所述补偿控制部的顶面与所述加热板的底面相邻，设置于所述加热板和所述补偿控制部之间并通信连接所述补偿控制部的若干温度补偿单元与所述加热板底面设置的若干控温补偿区域一一对应设置，避免了复杂的出线设计，能够在所述补偿控制部的控制下对所述控温补偿区域进行温度补偿调节，从而在尽可能小的制造和维护成本下有效控制半导体基板的温度均匀性。
优选的，所述温度补偿单元包括通信连接所述补偿控制部的辅助调温部，所述辅助调温部的顶端与对应的所述控温补偿区域之间的距离大于等于0。
进一步优选的，所述辅助调温部包括导热元件或制冷元件。
优选的，所述温度补偿单元还包括连接所述辅助调温部的固定部，所述辅助调温部通过所述固定部固定于对应的所述控温补偿区域。
优选的，所述半导体基板加热装置还包括设置于所述主加热部和所述补偿控制部之间的分隔板，所述温度补偿单元设置于所述分隔板。
进一步优选的，所述分隔板的组成材料包括隔热材料。
进一步优选的，所述分隔板的数目至少为2，所述温度补偿单元卡设于相邻所述分隔板之间。
优选的，所述温度补偿单元还包括设置于所述辅助调温部底部的支撑部， 以及设置于所述支撑部内的弹性部，所述支撑部设置于所述分隔板，所述弹性部在所述支撑部的作用下对所述辅助调温部施加朝向对应所述控温补偿区域方向的作用力来调节所述辅助调温部的顶端与对应的所述控温补偿区域之间的距离。
进一步优选的，所述支撑部包括支撑所述辅助调温部的内支撑部和围设于所述内支撑部的外支撑部，所述内支撑部外侧壁和所述外支撑部外侧壁之间具有间距。
进一步优选的，所述弹性部的一端部设置于所述外支撑部内，另一端部与所述内支撑部底部相接触。
进一步优选的，所述弹性部围设于所述内支撑部底部，并与所述分隔板相接触。
进一步优选的，所述内支撑部内设置有允许引线通过的引线孔。
进一步优选的，所述外支撑部内设置有允许引线通过的引线孔。
进一步优选的，所述主加热部还包括用于进行温度控制的主控部，所述补偿控制部通信连接所述主控部，以在所述主控部的控制下进行所述温度补偿调节。
进一步优选的，所述加热板的顶面包括基板接触区域，所述加热板的底面包括与所述基板接触区域相对应的底面控制区域，所述控温补偿区域为所述底面控制区域内的任一区域。
本发明的半导体设备包括所述半导体基板加热装置。
所述半导体设备还包括温度校准部，所述主加热部还包括主控部，所述温度校准部与所述半导体基板加热装置中加热板的加热面相接触，以获取并反馈温度校准信息，所述主控部设置于所述加热腔体外，并通信连接所述补偿控制部和所述温度校准部的至少一种。
本发明所述半导体设备的控温方法包括以下步骤：
S0：提供所述半导体设备，所述半导体设备包括加热腔体、主加热部、 补偿控制部和至少一个温度补偿单元；
S1：通过所述补偿控制部驱动至少一个所述温度补偿单元对所述主加热部的加热板进行温度补偿调节。
附图说明
图1为本发明实施例的一种半导体基板加热装置的部分结构示意图；
图2为本发明实施例的另一种半导体基板加热装置的部分结构示意图；
图3为图2所示的A部分的放大结构示意图；
图4为本发明实施例的一种温度补偿单元的结构示意图；
图5为图4所示的温度补偿单元的内部结构示意图；
图6为本发明实施例的另一种温度补偿单元的内部结构示意图；
图7为图6所示的温度补偿单元在加热腔体内的工作状态示意图；
图8为本发明实施例的一种半导体设备的工作状态示意图。
发明内容
为使本发明实施例的目的、技术方案和优点更加清楚，下面将对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。除非另外定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。
本发明实施例提供了一种半导体基板加热装置，能够以尽可能小的制造和维护成本提高对半导体基板温度控制的均匀性。
本发明实施例的半导体基板加热装置包括加热腔体、主加热部、补偿控制部、和至少一个温度补偿单元。
一些实施例中，所述主加热部包括主控部、加热板和设置于所述加热板 的主加热单元，所述主控部通信连接所述主加热单元。所述主控部用于进行温度控制。所述主控部对所述主加热单元进行温度控制，通过所述主加热单元使所述加热板的加热面产生热量，半导体基板朝向所述加热板的加热面放置，所述加热板的加热面向所述半导体基板传递热量。
具体的，所述主控部、所述加热板和所述主加热单元之间的结构关系以及具体实现方式为本领域技术人员的常规技术手段，在此不做赘述。
图1为本发明实施例的一种半导体基板加热装置的部分结构示意图。
参照图1，半导体基板加热装置1中，加热腔体(图中未标示)内设置有加热板11、至少一个温度补偿单元12和补偿控制部13。
一些实施例中，所述加热板11的底面包括至少一个控温补偿区域。
一些实施例中，所述加热板的顶面包括基板接触区域，所述加热板的底面包括与所述基板接触区域相对应的底面控制区域，所述控温补偿区域为所述底面控制区域内的任一区域。
所述控温补偿区域具体所在的范围以及相邻控制补偿区域之间的距离由所述加热板11自身的结构性能、工艺需求和安装条件共同决定。
一些具体的实施例中，若干所述控温补偿区域相对所述底面控制区域中心呈阵列分布。具体的阵列分布类型包括但不限于环形阵列和矩形阵列。
一些实施例中，参照图1，所述补偿控制部13的顶面与所述加热板11的底面相邻，即所述补偿控制部13的顶面与所述加热板11的底面之间围成了空腔区域。至少一个所述温度补偿单元12设置于所述加热板11和所述补偿控制部13之间的区域，并通信连接所述补偿控制部13。
一些实施例中，所述温度补偿单元12与所述控温补偿区域对应设置，以在所述补偿控制部13的控制下对所述控温补偿区域进行温度补偿调节。
一些实施例中，所述补偿控制部13通信连接所述主加热部的主控部，以在所述主控部的控制下进行所述温度补偿调节。
一些实施例中，所述主控部设置于所述加热腔体外，至少一个所述温度 补偿单元12设置于所述加热板11和所述补偿控制部13之间的区域，并通信连接所述补偿控制部13，使得所述加热腔体内的布线集中于所述加热板11和所述补偿控制部13之间，避免了复杂的出线设计，便于所述半导体基板加热装置的拆装和维修。
进一步的，通过单一通信引线电连接所述补偿控制部13和所述主控部，就能够通过对所述补偿控制部13的控制实现对所述加热板11的温度补偿调节，进一步避免了复杂的出线设计，便于所述半导体基板加热装置的拆装和维修。
一些具体的实施例中，所述补偿控制部13为电路板，所述电路板表面设置有控制电路以对至少一个所述温度补偿单元12实现控制。控制的具体实现方式可以是同步控制，也可以是相互独立控制。
一些具体的实施例中，所述补偿控制部13包括由印刷电路板(Printed Circuit Board，PCB)以及设置于PCB板的功能器件组成的控制板。
一些具体的实施方式中，所述补偿控制部13还包括封装所述控制板的隔热结构，所述隔热结构能够覆盖所述控制板的至少一个表面，例如朝向所述加热板11底面的控制部顶面，并不影响所述补偿控制部13和所述温度补偿单元12之间的电连接，以避免所述补偿控制部13因受热而影响功能实现。
一些具体的实施例中，所述主控部为上位机。
一些实施例中，所述参照图1，所述温度补偿单元12包括通信连接所述补偿控制部13的辅助调温部121。
一些实施例中所述辅助调温部121包括导热元件或制冷元件，以对所述加热板11底面对应的控温补偿区域起到制热或制冷的作用。
一些实施例中，所述辅助调温部121与所述加热板11之间为接触式相互作用，即所述辅助调温部121的顶端与对应的所述控温补偿区域(图中未标示)之间的距离等于0，使得所述辅助调温部121顶端与所述控温补偿区域(图中未标示)贴合。
一些实施例中，所述温度补偿单元12还包括连接所述辅助调温部121的固定部，所述辅助调温部121通过所述固定部固定于对应的所述控温补偿区域。
一些具体的实施例中，所述辅助调温部121的导热元件为陶瓷加热片。
一些具体的实施例中，所述辅助调温部121的制冷元件为半导体制冷片。
一些具体的实施例中，所述固定部为耐高温粘胶。
一些实施例中，所述辅助调温部121为小型供气组件。
一些实施例中，所述小型供气组件设置为在所述补偿控制部13的控制下向对应的所述控温补偿区域喷射洁净的制冷气体。
一些实施例中，所述小型供气组件包括与每个所述控温补偿区域对应设置的气体循环管路，所述小型供气组件设置为在所述补偿控制部13的控制下通过所述气体循环管路使洁净的制冷气体在所述气体循环管路中流通，以使对应的所述控温补偿区域降温。
一些实施例中，所述辅助调温部121为小型供液组件。
一些实施例中，所述小型供液组件包括与每个所述控温补偿区域对应设置的液体循环管路，所述小型供液组件设置为在所述补偿控制部13的控制下使制热液体在所述液体循环管路中流通循环，以使对应的所述控温补偿区域升温。
图2为本发明实施例的另一种半导体基板加热装置的部分结构示意图。图3为图2所示的A部分的放大结构示意图。
一些实施例中，参照图2和图3，所述温度补偿单元12悬设于所述加热板11和所述补偿控制部13之间，使得所述辅助调温部121的顶端与对应的所述控温补偿区域之间的距离大于0。所述辅助调温部121与所述加热板11之间为非接触式相互作用。
一些具体的实施例中，所述辅助调温部121的加热元件为LED灯或卤素灯。
一些实施例中，所述半导体基板加热装置还包括设置于所述加热腔体内的分隔板。参照图2和图3，分隔板21设置于所述加热板11和所述补偿控制部13所述温度补偿单元12设置于所述分隔板21。
一些实施例中，所述分隔板21的组成材料包括隔热材料，有利于维持所述加热板11的传热效果。
一些实施例中，所述分隔板21的数目至少为2，所述温度补偿单元12卡设于相邻所述分隔板21之间。参照图3，所述分隔板21包括相邻的第一分隔板31和第二分隔板32，所述温度补偿单元12卡设在所述第一分隔板31和第二分隔板32之间。
图4为本发明实施例的一种温度补偿单元的结构示意图。图5为图4所示的温度补偿单元的内部结构示意图。
一些实施例中，参照图3至图5，所述温度补偿单元12还包括设置于所述辅助调温部121底部的支撑部41，以及设置于所述支撑部41内的弹性部51。所述支撑部41设置于所述分隔板21，所述弹性部51在所述支撑部41的作用下对所述辅助调温部121施加朝向对应所述控温补偿区域(图中未标示)方向的作用力来调节所述辅助调温部121的顶端与对应的所述控温补偿区域(图中未标示)之间的距离。
一些实施例中，所述弹性部51在所述支撑部41的作用下对所述辅助调温部121施加朝向对应所述控温补偿区域(图中未标示)方向的作用力使所述辅助调温部121的顶端与对应的所述控温补偿区域(图中未标示)贴合。
一些实施例中，参照图4和图5，所述支撑部41包括支撑所述辅助调温部121的内支撑部411和围设于所述内支撑部411的外支撑部412，所述内支撑部411外侧壁和所述外支撑部412外侧壁之间具有间距。
一些实施例中，参照图3和图5，所述弹性部51的一端部设置于所述外支撑部412内，另一端部与所述内支撑部411底部相接触。
一些实施例中，所述弹性部51的一个端部固定于所述外支撑部内，另一 个端部与所述内支撑部411底部相接。所述弹性部51为压缩工作状态，以对所述辅助调温部121施加朝向对应所述控温补偿区域(图中未标示)方向的作用力使所述辅助调温部121的顶端与对应的所述控温补偿区域(图中未标示)贴合。
一些实施例中，参照图5，所述外支撑部412顶部包括凹陷结构52，所述辅助调温部121固定设置于所述内支撑部411顶部，所述内支撑部411的至少一部分收容于所述凹陷结构52内，所述凹陷结构52限定了所述内支撑部411沿径向方向的运动范围，使得所述辅助调温部121能够有效作用于对应的所述控温补偿区域(图中未标示)。
一些实施例中，参照图3和图5，所述内支撑部411内设置有允许引线穿过的第一引线孔53，所述外支撑部412内设置有允许引线穿过的第二引线孔54。所述第一引线孔53和所述第二引线孔54相通，所述弹性部51为中空结构，且两端连通所述第一引线孔53和所述第二引线孔54，使得设置在所述补偿控制部13的通信引线(图中未标示)能够经所述第二引线孔54、所述弹性部51以及所述第一引线孔53与所述辅助调温部121电连接。
一些具体的实施例中，所述弹性部51为弹簧。
图6为本发明实施例的另一种温度补偿单元的内部结构示意图；图7为图6所示的温度补偿单元在加热腔体内的工作状态示意图。
一些实施例中，参照图6和图7，所述弹性部51围设于所述内支撑部411底部，并与所述分隔板21相接触。具体的，所述外支撑部412贯穿所述第一分隔板31后底部与所述第二分隔板32相接触，所述外支撑部412底部的凸起结构63卡设在所述第一分隔板31和所述第二分隔板32之间以实现所述外支撑部412在所述分隔板21的可拆卸固定连接。所述弹性部51底部与所述第二分隔板32顶部相接触。
一些实施例中，参照图6和图7，所述内支撑部411包括底部凸起结构61，所述弹性部51活动围设于所述底部凸起结构61。所述弹性部51为压缩 工作状态，以对所述辅助调温部121施加朝向对应所述控温补偿区域(图中未标示)方向的作用力使所述辅助调温部121的顶端与对应的所述控温补偿区域(图中未标示)贴合。
一些实施例中，参照图6和图7，所述内支撑部411包括顶部凸起结构62，所述外支撑部412的顶部围设于所述顶部凸起结构62，且所述顶部凸起结构62限定了所述外支撑部412沿轴向方向的运动范围。
一些实施例中，参照图6和图7，设置在所述补偿控制部13的通信引线(图中未标示)能够经所述内支撑部411开设的所述第一引线孔53与所述辅助调温部121电连接。
图8为本发明实施例的一种半导体设备的工作状态示意图。
参照图1和图8，图8所示的半导体设备包括图1所示的半导体基板加热装置1和温度校准部83。图1所示的外侧壁15和封板14是图8所示的容置腔体82的组成结构，所述容置腔体82与盖体81组成了加热腔体。
参照图1和图8，所述温度校准部83与所述加热板11的顶面相接触，以获取并反馈温度校准信息，主控部86设置于所述加热腔体(图中未标示)外，并通信连接所述补偿控制部13和所述温度校准部84的至少一种。
一些具体的实施例中，所述温度校准部83包括通信连接的测温晶圆84和温度传感反馈器85。所述测温晶圆84通过所述温度传感反馈器85与所述主控部86通信连接。
本发明实施例的所述半导体设备的控温方法包括：通过所述补偿控制部13驱动至少一个所述温度补偿单元12对所述加热板11进行温度补偿调节。
一些实施例中，通过所述补偿控制部13驱动至少一个所述温度补偿单元12对所述加热板11进行温度补偿调节的步骤包括：通过所述主控部86控制所述补偿控制部13，从而驱动至少一个所述温度补偿单元12对所述加热板11进行温度补偿调节。
一些实施例中，执行通过所述主控部86控制所述补偿控制部13的步骤 之前，将所述测温晶圆84放置在所述加热板11的顶面，通过所述主控部86的控制对所述加热板11的各个控温区域进行升温，使所述测温晶圆84的温度达到目标温度。
具体的，所述加热板11升温的过程中，所述温度传感反馈器85向所述主控部86反馈所述测温晶圆84的各个测温采样点的温度值，所述主控部86根据接收到的各个测温采样点的温度值计算的平均温度与目标温度相比较，以判断所述测温晶圆是否达到目标温度。
现有技术通常采用对所述加热板11进行分区控制的方式调节所述加热板11的温度均匀性。例如将所述加热板11分为七分区、十三分区、十五分区等。考虑到功能器件的布局要求以及布线安装的限制，对所述加热板11的分区不可能无限大，每个分区都包括了所述测温晶圆84上的若干个测温采样点。例如当通过所述测温晶圆84显示某个分区，例如第一分区的温度均匀性不满足工艺要求，需要进行升温调整后，所述主控部86会控制第一分区进行升温。但是这种调整会带来如下问题：第一分区内所包含的若干个测温采样点中部分测温采样点的平均温度会低于目标温度，但是这些测温采样点中的一部分测温采样点的温度会高于目标温度，而且和目标温度之间的温度差极有可能是互有区别的。即使是温度低于目标温度的各个控温区域，和目标温度之间的温度差也极有可能是互有区别的。可见对单个分区进行的温度调整很容易在所述加热板11的整体范围内再次引起温度不均匀的问题。
另外，上述分区控制的方式使得每个分区都需要独立的温度控制，显著增加了温控部分的成本，且分区越细成本约高。
本发明实施例技术方案中，所述测温晶圆84的温度达到目标温度后，通过所述温度传感反馈器85获取所述测温晶圆84的各个测温区域温度信息，根据这些温度信息判断所述加热板11底面进行温度补偿调节的若干控温补偿区域。然后控制所述补偿控制部13驱动对应的所述温度补偿单元12进行升温或降温，以达到温度补偿调节的目的。
虽然在上文中详细说明了本发明的实施方式，但是对于本领域的技术人员来说显而易见的是，能够对这些实施方式进行各种修改和变化。但是，应理解，这种修改和变化都属于权利要求书中所述的本发明的范围和精神之内。而且，在此说明的本发明可有其它的实施方式，并且可通过多种方式实施或实现。

Claims (18)

  1. 一种半导体基板加热装置，其特征在于，包括：
    加热腔体；
    主加热部，包括设置于所述加热腔体内的加热板，所述加热板的底面包括至少一个控温补偿区域；
    补偿控制部，设置于所述加热腔体内，所述补偿控制部的顶面与所述加热板的底面相邻；
    至少一个温度补偿单元，设置于所述加热板和所述补偿控制部之间，并通信连接所述补偿控制部；
    所述温度补偿单元与所述控温补偿区域对应设置，以在所述补偿控制部的控制下对所述控温补偿区域进行温度补偿调节。
  2. 根据权利要求1所述的半导体基板加热装置，其特征在于，所述温度补偿单元包括通信连接所述补偿控制部的辅助调温部，所述辅助调温部的顶端与对应的所述控温补偿区域之间的距离大于等于0。
  3. 根据权利要求2所述的半导体基板加热装置，其特征在于，所述辅助调温部包括导热元件或制冷元件。
  4. 根据权利要求2所述的半导体基板加热装置，其特征在于，所述温度补偿单元还包括连接所述辅助调温部的固定部，所述辅助调温部通过所述固定部固定于对应的所述控温补偿区域。
  5. 根据权利要求2所述的半导体基板加热装置，其特征在于，还包括设置于所述加热板和所述补偿控制部之间的分隔板，所述温度补偿单元设置于所述分隔板。
  6. 根据权利要求5所述的半导体基板加热装置，其特征在于，所述分隔板的组成材料包括隔热材料。
  7. 根据权利要求5所述的半导体基板加热装置，其特征在于，所述分隔板的数目至少为2，所述温度补偿单元卡设于相邻所述分隔板之间。
  8. 根据权利要求5所述的半导体基板加热装置，其特征在于，所述温度补偿单元还包括设置于所述辅助调温部底部的支撑部，以及设置于所述支撑部内的弹性部，所述支撑部设置于所述分隔板，所述弹性部在所述支撑部的作用下对所述辅助调温部施加朝向对应所述控温补偿区域方向的作用力来调节所述辅助调温部的顶端与对应的所述控温补偿区域之间的距离。
  9. 根据权利要求8所述的半导体基板加热装置，其特征在于，所述支撑部包括支撑所述辅助调温部的内支撑部和围设于所述内支撑部的外支撑部，所述内支撑部外侧壁和所述外支撑部外侧壁之间具有间距。
  10. 根据权利要求9所述的半导体基板加热装置，其特征在于，所述弹性部的一端部设置于所述外支撑部内，另一端部与所述内支撑部底部相接触。
  11. 根据权利要求9所述的半导体基板加热装置，其特征在于，所述弹性部围设于所述内支撑部底部，并与所述分隔板相接触。
  12. 根据权利要求9所述的半导体基板加热装置，其特征在于，所述内支撑部内设置有允许引线通过引线孔。
  13. 根据权利要求9所述的半导体基板加热装置，其特征在于，所述外支撑部内设置有允许引线通过的引线孔。
  14. 根据权利要求1所述的半导体基板加热装置，其特征在于，所述主加热部还包括用于进行温度控制的主控部，所述补偿控制部通信连接所述主控部，以在所述主控部的控制下进行所述温度补偿调节。
  15. 根据权利要求1所述的半导体基板加热装置，其特征在于，所述加热板的顶面包括基板接触区域，所述加热板的底面包括与所述基板接触区域相对应的底面控制区域，所述控温补偿区域为所述底面控制区域内的任一区域。
  16. 一种半导体设备，其特征在于，包括如权利要求1-15任一项所述的半导体基板加热装置。
  17. 根据权利要求16所述的半导体设备，其特征在于，其特征在于，还包括温度校准部，所述主加热部还包括主控部，所述温度校准部与所述半导体基板加热装置中加热板的加热面相接触，以获取并反馈温度校准信息，所述主控部设置于所述加热腔体外，并通信连接所述补偿控制部和所述温度校准部的至少一种。
  18. 如权利要求16-17任一项所述的半导体设备的控温方法，其特征在于，包括以下步骤：
    S0：提供所述半导体设备，所述半导体设备包括加热腔体、主加热部、补偿控制部和至少一个温度补偿单元；
    S1：通过所述补偿控制部驱动至少一个所述温度补偿单元对所述主加热部的加热板底面进行温度补偿调节。
PCT/CN2022/102414 2022-06-29 2022-06-29 半导体基板加热装置、半导体设备及控温方法 WO2024000285A1 (zh)

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