WO2023285234A1 - Power module - Google Patents

Power module Download PDF

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Publication number
WO2023285234A1
WO2023285234A1 PCT/EP2022/068732 EP2022068732W WO2023285234A1 WO 2023285234 A1 WO2023285234 A1 WO 2023285234A1 EP 2022068732 W EP2022068732 W EP 2022068732W WO 2023285234 A1 WO2023285234 A1 WO 2023285234A1
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WO
WIPO (PCT)
Prior art keywords
power module
switching elements
terminal
terminals
current
Prior art date
Application number
PCT/EP2022/068732
Other languages
French (fr)
Inventor
Tobias Schuetz
Johann Asam
Robert Rösner
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2023285234A1 publication Critical patent/WO2023285234A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)

Abstract

A power module is described comprising: a plurality of DC terminals at a first end of the power module for receiving a DC input, wherein the plurality of DC terminals comprise one or more positive DC terminals and one or more negative DC terminals; an AC terminal for providing an AC output; a plurality of first switching elements, electrically connected in parallel, wherein the first switching elements are provided in one or more lines running from the first end of the power module to a second end of the power module, opposite the first end, wherein the first switching elements selectively connect the one or more positive DC terminals to the AC terminal; a plurality of second switching elements, electrically connected in parallel, wherein the second switching elements are provided in one or more lines running from the first end to the second end of the power module, wherein the second switching elements selectively connect the one or more negative DC terminals to the AC terminal; and a first current diverting structure connecting one of the DC terminals at the first end and a first DC terminal point at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module.

Description

Power Module
Field
The present specification relates to a power module, for example, including switching elements.
Background
Many configurations of switching arrangements are known in the art. However, there remains a need for further developments in this field.
Summary
In a first aspect, this specification describes a power module comprising: a plurality of DC terminals at a first end of the power module for receiving a DC input, wherein the plurality of DC terminals comprise one or more positive DC terminals and one or more negative DC terminals; an AC terminal for providing an AC output; a plurality of first switching elements, electrically connected in parallel, wherein the first switching elements are provided in one or more lines running from the first end of the power module to a second end of the power module, opposite the first end, wherein the first switching elements selectively connect the one or more positive DC terminals to the AC terminal; a plurality of second switching elements, electrically connected in parallel, wherein the second switching elements are provided in one or more lines running from the first end to the second end of the power module, wherein the second switching elements selectively connect the one or more negative DC terminals to the AC terminal; and a first current diverting structure connecting one of the DC terminals at the first end and a first DC terminal point at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module.
In some examples, the first current diverting structure connects one of the DC terminals at the first end and a first DC terminal point at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements only at or near the second end of the power module.
In some examples, the AC terminal is provided at the second end of the power module.
In some examples, the first current diverting structure connects one of the negative DC terminals and the first DC terminal point such that current received at the respective negative DC terminal is directed to respective switching elements of the plurality of second switching elements at or near the second end of the power module.
In some examples, the power module further comprises a second current diverting structure connecting a second one of the negative DC terminals and a second DC terminal point at or near the second end such that current received at the second one of the negative DC terminals is directed to respective switching elements of the plurality of second switching elements at or near the second end of the power module.
In some examples, the first current diverting structure connects one of the positive DC terminals and the first DC terminal point such that current received at the respective positive DC terminal is directed to respective switching elements of the plurality of first switching elements at or near the second end of the power module.
In some examples, the power module further comprises a second current diverting structure connecting a second one of the positive DC terminals and a second DC terminal point at or near the second end such that current received at the second one of the positive DC terminals is directed to respective switching elements of the plurality of first switching elements at or near the second end of the power module.
In some examples, the first DC terminal point is at or near a respective switching element that lies nearest to the second end of the power module.
In some examples, the first switching elements are provided in two lines running from the first end of the power module to the second end of the power module; and the second switching elements are provided in two lines running from the first end to the second end of the power module. ln some examples, the second switching elements are provided on either side of the two lines of first switching elements; or the first switching elements are provided on either side of the two lines of second switching elements.
In some examples, the power module is a half-bridge power module.
In some examples, the power module is a molded power module.
In some examples, the power module is a framed module with a gel filling.
In a second aspect, this specification describes a method of manufacturing some or all of a power module as described above with reference to the first aspect.
In a third aspect, this specification describes a computer-readable medium having computer executable instructions adapted to cause a 3D printer or additive manufacturing apparatus to form some or all of a power module as described above with reference to the first aspect.
Brief description of the drawings
Example embodiments will now be described, by way of example only, with reference to the following schematic drawings, in which:
FIG. 1 is a view from above of a circuit;
FIG. 2 is a three-dimensional view of the circuit of FIG. 1;
FIG. 3 is a view from above of a circuit in accordance with an example embodiment;
FIG. 4 is a view from above of a circuit in accordance with an example embodiment;
FIG. 5 is a three-dimensional view of a circuit in accordance with an example embodiment; FIG. 6 is a three-dimensional view of a structure in accordance with an example embodiment;
FIG. 7 is a three-dimensional view of a circuit in accordance with an example embodiment; FIG. 8 is a view from above of a circuit in accordance with an example embodiment;
FIGS. 9 to 12 are three-dimensional views of circuits in accordance with example embodiments;
FIG. 13 shows a switching module used in an example embodiment;
FIG. 14 shows a switching module corresponding to the circuit of FIGs. 1 and 2;
FIG. 15 shows a switching module corresponding to the circuit of FIGs. 3 and 4; and FIG. 16 is a block diagram of an inverter circuit used in example embodiments. Detailed description
The scope of protection sought for various embodiments of the invention is set out by the independent claims. The embodiments and features, if any, described in the specification that do not fall under the scope of the independent claims are to be interpreted as examples useful for understanding various embodiments of the invention.
In the description and drawings, like reference numerals refer to like elements throughout.
Semiconductor devices, such as fast switching semiconductor devices, may benefit from low inductive connections to components connected to them. This is true for the connection to energy storages like capacitors, but also for the connections realized inside a power module where switching modules are arranged in parallel. Low inductance may be desirable, for example, to enable fast switching with low overshoots, minimized ringing, low switching loss etc.
Circuits with low inductance may be sensitive to small inductance differences between different chips, such that difference in inductance between parallel chips may cause significant current deviations while switching transients. Differences in inductances or coupling inductances, may lead to asymmetric current distribution and may increase chances of faults in scenarios like short circuits. Therefore, module layouts avoiding asymmetric current distribution are be desired.
FIG. 1 is a view from above of an example circuit, indicated generally by the reference numeral 10. For example, the circuit 10 corresponds to a layout realizing a half bridge circuit without the ability of utilizing a current diverting embodiment. The layout of circuit 10 may realize a power module comprising a plurality of direct current (DC) terminals at a first end of the power module for receiving a DC input and an alternating current (AC) terminal for providing an AC output. The plurality of DC terminals may comprise negative DC terminals 11a and 11b, and positive DC terminal 12. The power module further comprises a plurality of first switching elements 14a to 14h electrically connected in parallel, and a plurality of second switching elements 15a to 15h electrically connected in parallel. As shown in the figure, each of the plurality of first switching elements 14a to 14h and/or the plurality of second switching elements 15a to 15h may be provided in one or more lines running from the first end (e.g. comprising the DC terminals 11 and 12) of the power module to a second end (e.g. comprising the AC terminal 13) of the power module. The first and second switching elements 14 and 15 may be semiconductors. FIG. 2 is a three-dimensional view, indicated by the reference numeral 20, of the example circuit 10.
The connections between the DC terminals 11 and 12, switching elements 14 and 15, and AC terminal 13 is shown in three-dimensional view. For example, the positive DC terminal 12 is electrically connected, for example, to the middle trace of a structured conductive layer, where the first switching elements 14a to 14h are mounted. The negative DC terminal 11a is electrically connected, via contacts 16a to 16d, to a side trace of the structured conductive layer connected to the AC terminal 13 where the first switching elements 15a to 15d are mounted; and the negative DC terminal 11b is electrically connected, via contacts 17a to 17d, to another side trace of the structured conductive layer where the second switching elements 15e to 15h are mounted. The switching elements 14a to 14d and 14e to 14h are electrically connected to the side traces via contacts 16e to 16h and 17e to 17h respectively.
In a switching arrangement (e.g. half bridge power module) as shown in circuit 10, if all switching elements 14 and 15 were turned on (e.g. if a controller is giving wrong commands due, for example, to electromagnetic interference (EMI) issues; or due to a failing driver board or for some other reason), it may cause a short circuit (e.g. shoot-through). This is because an electrical connection may be made from the positive DC terminal 12 to the negative DC terminals 11 (11a and/or 11b), such that a short circuit current path is made causing a very high current from the positive DC terminal 12 to the negative DC terminals 11. This may, in turn, cause a significantly high current in the switching elements 14 (14a to 14h) and 15 (15a to 15h). For example, as the switching elements 14a and 15a have a significantly shorter path to the DC terminals 11a and 11b respectively, compared to switching elements 14d and 15d, the switching elements 14a and 15a create a lower inductive path for the short circuit current compared to the path created by switching elements 14d and 15d. Hence, the short circuit current may be expected to almost exclusively flow through the switching elements 14a,14h and 15a, 15h. The switching elements physically closer to the AC terminal 13 (e.g. towards the second end) may only receive a relatively small amount of short circuit current, as the inductance is larger due to having a longer path from/to the DC terminals. The inductances between the switching elements are described in further detail below with reference to FIG. 14.
FIG. 3 is a view from above of a circuit, indicated generally with the reference numeral 30, of a power module in accordance with an example embodiment. For example, a half-bridge layout of the circuit 30 may enable the placement of a current diverting structure. The power module may comprise a plurality of DC terminals at a first end of the power module for receiving a DC input, where the plurality of DC terminals comprise one or more positive DC terminals 32 and one or more negative DC terminals 31a and 31b. The power module further comprises an AC terminal 33, for example, at a second end, for providing an AC output. The power module comprises a plurality of first switching elements 34a to 34h electrically connected in parallel. The first switching elements 34a to 34h may be provided in one or more lines (e.g. line 34a to 34d and line 34e to 34h) running from the first end of the power module to the second end of the power module opposite the first end. The power module also comprises a plurality of second switching elements 35a to 35h electrically connected in parallel, where the second switching elements 35a to 35h may be provided in one or more lines (e.g. line 35a to 35d and line 35e to 35h) running from the first end of the power module to the second end of the power module opposite the first end.
One of the differences between circuit 30 and circuit 10 described with reference to FIGs. 1 and 2 is that even though the switching elements 35a to 35d are connected, via contacts 36a to 36d to a first side trace, the first side trace is not electrically connected, and is insulated from the negative DC terminal 31a (unlike the connections between the switching elements 15a to 15d and the DC terminal 11a). As such, a short current path between the positive DC terminal 32 and the negative DC terminal 31 b is avoided. The means by which the switching elements 35a-35h and the DC terminals 31a and 31b are connected are explained further below with reference to FIG. 4.
FIG. 4 is a view from above of a circuit, indicated generally by the reference numeral 40, in accordance with an example embodiment. For example, the layout of circuit 40 shows a current diverting structure placed on the circuit.
Circuit 40 comprises all elements of circuit 30 as described with reference to FIG.3 (some of which are obscured). The circuit 40 further comprises one or more current diverting structures 41a and 41b (although two diverting structures are disclosed, one or the other of those diverting structures may be omitted in some example embodiments). The first current diverting structure 41a connects the negative DC terminal 31a at the first end and a first DC terminal point 42a only at or near the second end, such that current received at the negative DC terminal 31a is directed to switching elements (e.g. switching elements 35c, 35d) at or near the second end of the power module. Similarly, the second current diverting structure 41b connects the negative DC terminal 31 b at the first end and a second DC terminal point 42b only at or near the second end, such that current received at the negative DC terminal 31b is directed to switching elements (e.g. switching elements 35e, and 35f) at or near the second end of the power module. The positive DC terminal 32 is electrically connected, for example, to the middle trace of a structured conductive layer, where the first switching elements 34a to 34h are mounted. The negative DC terminal 31a is electrically connected, via contacts 36a to 36d, to a side trace of a structured conductive layer connected to the AC terminal 33 where the second switching elements 35a to 35d are mounted; and the negative DC terminal 31b is electrically connected, via contacts 37a to 37d, to the side trace of a structured conductive layer where the second switching elements 35e to 35h are mounted. The switching elements 34a to 34d and 34e to 34h are electrically connected to the side traces via contacts 36e to 36h and 37e to 37h respectively.
In the example circuit 40, the current diverting structure 41a provides the connection between negative DC terminal 31a and the switching elements 35a to 35d via the first DC terminal point 42a. The current diverting structure 41b has the same function with respect to the switching elements 35e to 35h, DC terminal 31 b, and DC terminal point 42b.
As such, in comparison to the arrangement described in circuit 10 with reference to FIGs. 1 and 2, in a scenario where all the switching elements 34 and 35 are turned on, an electrical connection may be made from the positive DC terminal 32 to the negative DC terminal 31a via the current diverting structure 41a. For example, the current path may start from the positive DC terminal 32 through the switching elements 34a via its adjacent switching element 35a, continuing its flow over the contacts 36a and pass through DC terminal point 42a before finally reaching the DC terminal 31a. At the same time a current path via components 34d and adjacent switching element 35d, 36d and 42a to the terminal 31a may be conducting.
For example, in contrast to the circuit layouts described above with reference to FIGs. 1 and 2, a first path (including terminal 32, switching element 34a, contact 36h, switching element 35a, contact 36a, terminal point 42a, and terminal 31a) and a second path (including terminal 32, switching element 34d, contact 36e, switching element 35d, contact 36d, terminal point 42a, and terminal 31a) are of similar length and inductance. This is also true for the paths passing switching elements 34b and 35b, 34c and 35c, 34e and 35e, 34f and 35f, 34g and 35g and 34h and 35h. The inductances through the paths are described in further detail below with reference to FIG. 15.
The similarity in length of the conductive paths and hence the similarity of inductances of these paths may lead to an equally shared short circuit current through all involved switching elements. The symmetrized current flow may avoid overheating of single switching elements which otherwise would have to handle extensively high currents (for instance 14a and 15a in arrangement 10). Current may not pass through only a few of the switching elements but through all placed switching elements in a symmetrized way.
FIG. 5 is a three-dimensional view, indicated generally by the reference numeral 50, of the circuit 40 in accordance with an example embodiment.
As seen from the view 50, the current diverting structures 41a and 41b may be placed on a different layer than the switching module arrangement.
FIG. 6 is a three-dimensional view, indicated generally by the reference numeral 60, of a structure, such as the current diverting structures 41a and 41b in accordance with an example embodiment. The view 60 shows the current diverting structures 41a and 41b from above such that they may be placed on a power module in this orientation.
FIG. 7 is a three-dimensional view, indicated generally by the reference numeral 70, of the circuit 40 in accordance with an example embodiment. The view 70 shows a zoomed three dimensional view of the circuit 40 where the connection between the current diverting structure 41a and the negative DC terminal 31a is shown clearly.
In an example embodiment, as shown in FIGs. 3 to 7, the first current diverting structure 41a connects one of the negative DC terminals, such as the negative DC terminal 31a and the first DC terminal point 42a such that current received at the respective negative DC terminal 31a is directed to respective switching elements of the plurality of second switching elements 34a to 34d at or near the second end of the power module.
In an example embodiment, as shown in FIGs. 3 to 7, the power module (optionally) comprises the second current diverting structure 41b connecting a second one of the negative DC terminals, such as DC terminal 31 b and a second DC terminal point 42b at or near the second end such that current received at the second one of the negative DC terminals 31b is directed to respective switching elements of the plurality of second switching elements 35a to 35h at or near the second end of the power module.
Alternatively, in an example embodiment, the first current diverting structure connects one of the positive DC terminals, such as the DC terminal 32, and the first DC terminal point 41a such that current received at the respective positive DC terminal 32 is directed to respective switching elements of the plurality of first switching elements 34a to 34h at or near the second end of the power module. Alternatively, or in addition, when the power module comprises a plurality of positive DC terminals, the second current diverting structure 41b may connect a second one of the positive DC terminals and a second DC terminal point at or near the second end such that current received at the second one of the positive DC terminals is directed to respective switching elements of the plurality of first switching elements at or near the second end of the power module.
In an example embodiment, the first DC terminal point 42a and/or the second DC terminal point 42b is at or near a respective switching element that lies nearest to the second end of the power module. For example, the DC terminal point 42a may be at or near switching element 35d and the DC terminal point 42b may be at or near switching element 35e.
In an example embodiment, the first switching elements 34a to 34h are provided in two lines running from the first end of the power module to the second end of the power module; and the second switching elements 35a to 35h are provided in two lines running from the first end to the second end of the power module. As shown in FIG. 3, the second switching elements 35a to 35h may be provided on either side of the two lines of first switching elements 34a to 34h. Alternatively, the first switching elements 34a to 34h may be provided on either side of the two lines of second switching elements 35a to 35h.
In an example embodiment, the power module is a half-bridge power module.
Although not shown in the example figures, the power modules described herein may be completed by being formed as framed modules with silicone-gel filling or encapsulated to form molded power modules.
FIG. 8 is a view from above of a circuit, indicated generally by the reference numeral 80, in accordance with an example embodiment.
The circuit 80 represents a power module and comprises a positive DC terminal 84, an AC terminal 83, current diverting structures 81a and 81b, and a plurality of switching elements (such as the switching elements 34a to 34h, 35a to 35h described above). The current diverting structures 81a and 81b comprise DC terminal points 82a and 82b at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module. The current diverting structures 81a and 81b comprises negative DC terminals 85a and 85 respectively, such that the DC terminals 85a and 85b are part of the current diverting structure, rather than the integrated circuit comprising the switching module.
For example, an advantage of implementing the current diverting structures 81a and 81b as shown in Fig. 8 may be that they can be placed as part of a leadframe, together with all of the other external terminals. The leadframe may be a single structure comprising all the external terminals together with the sections of internal conductor directly attached to them. All of the terminals may be linked by a supporting frame (e.g. dam bar). The supporting frame may be formed from a sheet of conductor, such as copper, and placed in position and fixed using soldering, welding or other known technologies. After the power module is encapsulated with a molding compound, the sections of the supporting frame that link the different terminals may be cut away. An advantage of the current diverting structure shown in Fig 8 in comparison with that shown in Figs. 3 to 7 is that all the terminals and current diverting structures may be placed substantially simultaneously, in one process step, instead of consecutively as in the embodiments shown in Figs. 3 to 7.
FIG. 9 is a three-dimensional view, indicated generally by the reference numeral 90, of a circuit 90, in accordance with an example embodiment. For example, a half-bridge layout of the circuit 90 may enable the placement of a current diverting structure. The circuit 90 shows the circuit 80 described above without the current diverting structures 81a and 81b. The circuit 90 comprises a positive DC terminal 84, AC terminal 83, and a plurality of switching elements (e.g. 34a to 34h, 35a to 35h).
FIG. 10 is a three-dimensional view, indicated generally by the reference numeral 100, of the circuit 80, in accordance with an example embodiment. For example, the layout of circuit 100 shows a current diverting structure placed on the circuit. As described above with reference to FIGs. 3 to 7, the arrangement in circuit 80 of the plurality of switching elements, DC terminals, and current diverting structures seeks to divide shoot-through current among the plurality of switching element in the event of a short-circuit condition.
FIG. 11 is a three-dimensional view, indicated generally by the reference numeral 110, in accordance with an example embodiment. For example, the layout of the circuit 110 may enable the placement of a current diverting structure. The circuit 110 is shown without the current diverting structure (such that the components of the circuit 30 are not obscured). As shown in the view 110, the switching elements 34 or 35 are not electrically connected to the DC terminals 31 and 32 in the absence of the current diverting structure. FIG. 12 is a three-dimensional view of a circuit, indicated generally by the reference numeral 120, in accordance with an example embodiment. Circuit 120 comprises (obscured) components of circuit 30, as described with reference to FIG. 3. The circuit 120 further comprises a current diverting structure 111. The circuit 120 comprises a single current diverting structure instead of two current divergent structures 41a and 41b as described with reference to FIG. 4. The current diverting structure 111 comprises a first DC terminal point 112a and a second DC terminal point 112b. For example, the connection at the first DC terminal 112a may allow current received at the DC terminal point 112a to be directed to switching elements (e.g. 35c, 35d, 34c, 34d) at or near the second end of the power module, and/or the connection at the second DC terminal 112b may allow current received at the DC terminal point 112b to be directed to switching elements (e.g. 34e, 34f, 35e, 35f) at or near the second end of the power module.
FIG. 13 is a circuit diagram of an example inverter circuit, indicated generally by the reference numeral 130, that may be used to provide the switching circuitry of a semiconductor power module, as described above with reference to FIGs. 3 to 12. For example, the circuit 130 shows schematic of a half bridge power module wherein each switching function is realized by four switching elements in parallel. Circuit 130 comprises a plurality of switching elements (e.g. switching elements 34, 35) connected in parallel, with a positive DC terminal (e.g. DC terminal 32, 82), a negative DC terminal (e.g. DC terminals 31a, 31b, 81a, 81b), and an AC terminal (e.g. AC terminal 33, 83). The skilled person will be aware of many alternative circuits that could be used.
FIG. 14 shows a circuit diagram of a switching module, indicated generally by the reference numeral 140, corresponding to the circuit of FIGs. 1 and 2. The circuit diagram is shown with the respective inductances L1 to L8 corresponding to the switching elements T1 to T8. For example, switching elements T1 to T4 correspond to switching elements 14a to 14d respectively, and switching elements T5 to T8 correspond to switching elements 15a to 15d respectively described with reference to FIGs. 1 and 2. In shoot-through (T1 to T8 conducting) there may be four different current paths with four different loop inductances as follows:
• First path - T1 with T5 (adjacent partner) where full-loop inductance is L1+L5 (=2L)
• Second path - T2 with T6 where full-loop inductance is L1+L2+L5+L6 (=4L)
• Third path - T3 with T7 where full-loop inductance is L1+L2+L3+L5+L6+L7 (=6L)
• Fourth path - T4 with T8 where full-loop inductance is L1+L2+L3+L4+L5+L6+L7+L8 (=8L) As such, short circuit current will almost only be in T1 and T5 due to significantly lower inductance in the first path compared to all other paths.
FIG. 15 shows a circuit diagram of a switching module, indicated generally by the reference numeral 150, corresponding, for example, to the circuit of FIGs. 3 and 4. The circuit diagram is shown with the respective inductances L11 to L18 corresponding to the switching elements T11 to T18. For example, switching elements T11 to T14 correspond to switching elements 34a to 34d respectively, and switching elements T15 to T18 correspond to switching elements 35a to 35d respectively described with reference to FIGs. 3 and 4. In shoot through (T 11 to T18 conducting) there are four different current paths with four identical loop inductances:
• First path -T11 with T15 where full-loop inductance is L11+L15+L16+L17+L18 (=5L)
• Second path - T12 with T 16 where full-loop inductance is L11 +L12+L16+L17+L18 (=5L)
• Third path - T13 with T17 where full-loop inductance is L11 +L12+L13+L17+L8 (=5L)
• Third path - T14 with T18 where full-loop inductance is L11 +L12+L13+L14+L18 (=5L)
As such, short circuit current may be symmetrized due to same inductance through all paths. All switching elements may therefore conduct a similar amount of current.
FIG. 16 is a block diagram of an inverter circuit, indicated generally by the reference numeral 160, in which 3 pieces of the power modules described herein may be used. For example, the inverter circuit 160 may comprise a complete AC to AC system including a three-phase inverter circuit which may be realized by three (half bridge) power modules as described with reference to FIG. 13. The inverter circuit 160 may comprise an AC input 171, a rectifier 172 for converting an AC power source into a DC signal, and a DC storage capacitor 173. The inverter circuit may further comprise a switching module 174 (e.g. including three half-bridge power modules) and a control module 175 for controlling the switching of the plurality of switching components. The circuits described above may be used to implement the switching module 174, with the DC voltage across the DC storage capacitor providing the DC inputs to the busbars (e.g. to the terminals of all the half bridge switching modules).

Claims

Claims
1. A power module comprising: a plurality of DC terminals at a first end of the power module for receiving a DC input, wherein the plurality of DC terminals comprise one or more positive DC terminals and one or more negative DC terminals; an AC terminal for providing an AC output; a plurality of first switching elements, electrically connected in parallel, wherein the first switching elements are provided in one or more lines running from the first end of the power module to a second end of the power module, opposite the first end, wherein the first switching elements selectively connect the one or more positive DC terminals to the AC terminal; a plurality of second switching elements, electrically connected in parallel, wherein the second switching elements are provided in one or more lines running from the first end to the second end of the power module, wherein the second switching elements selectively connect the one or more negative DC terminals to the AC terminal; and a first current diverting structure connecting one of the DC terminals at the first end and a first DC terminal point at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module.
2. A power module as claimed in claim 1 , wherein the first current diverting structure connects one of the DC terminals at the first end and a first DC terminal point only at or near the second end, such that current received at the respective DC terminal is directed to respective switching elements at or near the second end of the power module.
3. A power module as claimed in claim 1 or claim 2, wherein the AC terminal is provided at the second end of the power module.
4. A power module as claimed in in any one of the preceding claims, wherein the first current diverting structure connects one of the negative DC terminals and the first DC terminal point such that current received at the respective negative DC terminal is directed to respective switching elements of the plurality of second switching elements at or near the second end of the power module.
5. A power module as claimed in claim 4, further comprising a second current diverting structure connecting a second one of the negative DC terminals and a second DC terminal point at or near the second end such that current received at the second one of the negative DC terminals is directed to respective switching elements of the plurality of second switching elements at or near the second end of the power module.
6. A power module as claimed in any of claims 1-3, wherein the first current diverting structure connects one of the positive DC terminals and the first DC terminal point such that current received at the respective positive DC terminal is directed to respective switching elements of the plurality of first switching elements at or near the second end of the power module.
7. A power module as claimed in claim 6, further comprising a second current diverting structure connecting a second one of the positive DC terminals and a second DC terminal point at or near the second end such that current received at the second one of the positive DC terminals is directed to respective switching elements of the plurality of first switching elements at or near the second end of the power module.
8. A power module as claimed in any one of the preceding claims, wherein the first DC terminal point is at or near a respective switching element that lies nearest to the second end of the power module.
9. A power module as claimed in any one of the preceding claims, wherein: the first switching elements are provided in two lines running from the first end of the power module to the second end of the power module; and the second switching elements are provided in two lines running from the first end to the second end of the power module.
10. A power module as claimed in claim 9, wherein: the second switching elements are provided on either side of the two lines of first switching elements; or the first switching elements are provided on either side of the two lines of second switching elements.
11. A power module as claimed in any one of the preceding claims, wherein the power module is a half-bridge power module.
12. A power module as claimed in any one of the preceding claims, wherein the power module is a molded power module.
13. A power module as claimed in any one of claims 1 to 12, wherein the power module is a framed module with a gel filling.
PCT/EP2022/068732 2021-07-12 2022-07-06 Power module WO2023285234A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0621635A1 (en) * 1993-04-23 1994-10-26 Fuji Electric Co. Ltd. Power transistor module
US20160351505A1 (en) * 2014-02-11 2016-12-01 Mitsubishi Electric Corporation Power semiconductor module
US20190237440A1 (en) * 2016-05-27 2019-08-01 General Electric Company Power module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0621635A1 (en) * 1993-04-23 1994-10-26 Fuji Electric Co. Ltd. Power transistor module
US20160351505A1 (en) * 2014-02-11 2016-12-01 Mitsubishi Electric Corporation Power semiconductor module
US20190237440A1 (en) * 2016-05-27 2019-08-01 General Electric Company Power module

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