WO2023277579A1 - Élément de conversion de longueur d'onde et dispositif émetteur de lumière le comprenant - Google Patents

Élément de conversion de longueur d'onde et dispositif émetteur de lumière le comprenant Download PDF

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Publication number
WO2023277579A1
WO2023277579A1 PCT/KR2022/009332 KR2022009332W WO2023277579A1 WO 2023277579 A1 WO2023277579 A1 WO 2023277579A1 KR 2022009332 W KR2022009332 W KR 2022009332W WO 2023277579 A1 WO2023277579 A1 WO 2023277579A1
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wavelength conversion
conversion member
layer
silica
light
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PCT/KR2022/009332
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English (en)
Korean (ko)
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장순욱
이정규
김연
장재원
임중규
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대주전자재료 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to a wavelength conversion member and a light emitting device including the same, and more particularly, to a wavelength conversion member including a wavelength conversion layer and an antireflection layer including silica derived from colloidal silica and a light emitting device including the same it's about
  • Such a light emitting device generally includes a blue LED and a wavelength conversion member that absorbs blue light emitted from the LED and emits yellow, green, or red light to produce white light.
  • the wavelength conversion member is generally an organic matrix or an inorganic matrix. It has a structure in which phosphor powder is dispersed in it.
  • a wavelength conversion member in which phosphor powder is dispersed in a resin matrix has been used.
  • the wavelength conversion member there is a problem in that the resin is deteriorated or the luminance of the light emitting device is reduced due to heat or irradiation light of an excitation light source.
  • Japanese Patent Publication No. 2003-258308 and Japanese Patent Registration No. 4895541 disclose a manufacturing method of a wavelength conversion member in which phosphor powder is dispersed in a glass matrix.
  • some phosphors may be deteriorated by a high sintering temperature during manufacture of the wavelength conversion member, resulting in deterioration in optical properties and discoloration, and there are restrictions on the use of the phosphor, so that the wavelength conversion member has high color rendering properties. There is a problem that is difficult to implement.
  • such a wavelength conversion member may not sufficiently scatter the excitation light of the LED inside the wavelength conversion member, and in this case, there is a problem in that light emitted from the light emitting device is not uniform and fluorescence intensity is lowered.
  • Patent Document 1 Japanese Laid-open Patent No. 2003-258308
  • Patent Document 2 Japanese Patent Registration No. 4895541
  • the present invention was invented to solve the problems of the prior art, and the technical problem to be solved by the present invention is to provide a wavelength conversion member having high fluorescence intensity, excellent optical characteristics and durability against thermal shock, and a manufacturing method thereof. .
  • Another technical problem to be solved by the present invention is to provide a light emitting device including the wavelength conversion member.
  • one embodiment of the present invention is a glass matrix; and a wavelength conversion layer including phosphor powder dispersed in the glass matrix; and an antireflection layer formed on at least one surface of the wavelength conversion layer, wherein the antireflection layer includes silica derived from colloidal silica.
  • a glass matrix on the substrate; and forming a wavelength conversion layer including phosphor powder dispersed in the glass matrix; and forming an antireflection layer on at least one surface of the wavelength conversion layer, wherein the antireflection layer includes silica derived from colloidal silica.
  • the wavelength conversion member Furthermore, the wavelength conversion member; and a light source for radiating excitation light to the wavelength conversion member.
  • the wavelength conversion member according to an embodiment of the present invention has high fluorescence intensity, excellent optical properties such as light transmittance, light flux and converted light flux, and in particular, excellent light extraction efficiency and light emission intensity, and is resistant to thermal shock. It has excellent durability and can be usefully used in light emitting devices.
  • FIG. 1 shows a schematic diagram of a wavelength conversion member according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a wavelength conversion member according to another embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a wavelength conversion member according to another embodiment of the present invention.
  • FIG. 4 is a process flow diagram illustrating a method of manufacturing a wavelength conversion member according to an embodiment of the present invention.
  • FIG. 5 shows a scanning electron microscope (SEM) photograph obtained by analyzing the surface of the antireflection layer of the wavelength conversion member prepared in Example 1 at 150 magnification.
  • FIG. 6 shows a scanning electron microscope (SEM) photograph obtained by analyzing the surface of the wavelength conversion layer of the wavelength conversion member prepared in Comparative Example 1 at 1 magnification.
  • the present invention is not limited to the contents disclosed below, and may be modified in various forms as long as the gist of the invention is not changed.
  • a wavelength conversion member includes a glass matrix; and a wavelength conversion layer including phosphor powder dispersed in the glass matrix; and an antireflection layer formed on at least one surface of the wavelength conversion layer, wherein the antireflection layer includes silica derived from colloidal silica.
  • an antireflection layer including silica derived from colloidal silica is formed on at least one surface of a wavelength conversion layer including a glass matrix and a phosphor powder dispersed in the glass matrix, so that fluorescence It has high strength and excellent optical properties.
  • the antireflection layer includes silica derived from colloidal silica, it is possible to implement an antireflection layer having a desired coating thickness and excellent film formability without occurrence of cracks.
  • the refractive index of the phosphor powder included in the wavelength conversion layer and the glass matrix for dispersing the phosphor powder are high, a refractive index difference between the wavelength conversion layer and the air layer may increase. Due to this difference in refractive index, light scattering and reflection loss on the surface of the wavelength conversion layer tend to occur, and thus light extraction efficiency may be degraded.
  • an antireflection layer containing silica derived from colloidal silica on at least one surface of the wavelength conversion layer, light scattering and reflection loss at the interface of each layer can be reduced, thereby improving light extraction efficiency.
  • an antireflection layer having a low refractive index is formed between the wavelength conversion layer and the external air layer, a difference in refractive index between the wavelength conversion layer, the antireflection layer and the air layer may be reduced.
  • the concentration of the phosphor included in the wavelength conversion layer is high, the concentration of the phosphor on the surface of the wavelength conversion layer increases, and in some cases, the phosphor is exposed on the surface of the wavelength conversion layer to more efficiently exhibit the above effect.
  • the wavelength conversion member 100 includes a wavelength conversion layer 120 and an antireflection layer 130 formed on one surface of the wavelength conversion layer 120.
  • the wavelength conversion layer 120 includes a glass matrix 150 and a phosphor powder 170 dispersed in the glass matrix 150
  • the antireflection layer 130 includes silica derived from colloidal silica. (140).
  • the silica 140 derived from the colloidal silica may be dispersed in the inorganic binder 160 .
  • the wavelength conversion member 100 includes a wavelength conversion layer 120 and an antireflection layer formed on both sides of the wavelength conversion layer 120, for example, a first antireflection layer ( 130) and a second anti-reflection layer 135.
  • the wavelength conversion layer 120 includes a glass matrix 150 and phosphor powder 170 dispersed in the glass matrix 150
  • the first antireflection layer 130 and the second antireflection layer 135 includes a first silica 140, which is a silica derived from colloidal silica, and a second silica 145, which is a silica derived from colloidal silica, respectively.
  • the first silica 140 may be dispersed in the first inorganic binder 160 and the second silica 145 may be dispersed in the second inorganic binder 165 .
  • a wavelength conversion member includes a wavelength conversion layer (also referred to as a wavelength conversion member body) that serves to convert a wavelength of incident light (light).
  • the wavelength conversion layer may include a glass matrix; and a phosphor powder dispersed in the glass matrix.
  • the phosphor powder is evenly and uniformly dispersed in the glass matrix, so that a wavelength conversion member having excellent heat resistance can be obtained.
  • the shape, size, and thickness of the wavelength conversion layer may be appropriately set according to the shape, size, and thickness of a device in which the wavelength conversion member is used.
  • the wavelength conversion layer may have a planar rectangular shape or a circular plate shape.
  • the thickness of the wavelength conversion layer may be 100 to 800 ⁇ m, more preferably 100 to 500 ⁇ m, and more preferably 100 to 300 ⁇ m from the viewpoint of suppressing excitation light or fluorescence absorption.
  • the thickness of the wavelength conversion layer is too thick, light scattering and light absorption of the wavelength conversion layer may be excessively increased, resulting in low emission efficiency of fluorescence. If the thickness of the wavelength conversion layer is too thin, it may be difficult to obtain sufficient light emission intensity or the intensity of the wavelength conversion layer may decrease. Therefore, it is preferable to adjust the thickness of the wavelength conversion layer within the above range.
  • the wavelength conversion layer includes a glass matrix.
  • the glass matrix may be a base material obtained by molding and firing glass powder as a raw material.
  • the glass matrix may be obtained by applying a composition for a wavelength conversion member including glass powder and phosphor powder onto a substrate to obtain a sheet shape and firing the composition.
  • the glass matrix may be obtained by, for example, firing at 450 to 950° C. after compressing and molding glass powder into a molding mold.
  • the glass matrix may serve as a medium for stably maintaining the phosphor powder in a uniformly dispersed state in the glass matrix.
  • the composition of the glass powder is important.
  • the glass matrix preferably contains P 2 O 5 , ZnO, SiO 2 and B 2 O 3 as main components.
  • the glass matrix may be derived from a glass powder having a specific composition.
  • the glass powder contains 2 to 10 mol% of P 2 O 5 , 30 to 50 mol% of ZnO, 10 to 25 mol% of SiO 2 , and 15 to 25 mol% of B 2 O 3 based on the total number of moles of the glass powder.
  • the glass powder can be sufficiently sintered even when the content of the phosphor powder is high, and the decrease in luminance of light can be suppressed even when the wavelength conversion member is used for a long time.
  • the wavelength conversion member has excellent water resistance and can realize an excellent light absorption rate.
  • the P 2 O 5 is a component that forms a glass skeleton and improves water resistance, and the content of the P 2 O 5 is 2 to 10 mol%, preferably 2 to 6 mol, based on the total number of moles of the glass powder. may be %.
  • the content of P 2 O 5 is less than 2 mol %, it may be difficult to vitrify, and if the content of P 2 O 5 exceeds 10 mol %, the softening point (Ts) may increase and weather resistance may decrease.
  • the ZnO is a component that improves solubility by lowering the melting temperature, and the content of the ZnO may be 30 to 50 mol%, preferably 30 to 40 mol%, based on the total number of moles of the glass powder.
  • the effect of improving solubility may be insignificant, and if the content of ZnO exceeds 50 mol%, weather resistance may be deteriorated and transmittance may be reduced, thereby reducing luminous intensity.
  • the SiO 2 is a component constituting the glass skeleton, and the content of the SiO 2 may be 10 to 25 mol%, preferably 15 to 25 mol%, based on the total number of moles of the glass powder.
  • the B 2 O 3 is a component that forms a glass skeleton and lowers the melting temperature to improve solubility and light diffusivity, and the content of B 2 O 3 is 15 to 25 mol% based on the total number of moles of the glass powder. , preferably 15 to 20 mol%.
  • the glass powder is based on the total number of moles of the glass powder, Al 2 O 3 1 to 10 mol%, SnO 2 0.1 to 7 mol%, BaO 1 to 5 mol%, SrO 0.1 to 5 mol%, CaO 1 to 5 mol%, Li 2 O 1 to 5 mol%, Na 2 O 1 to 7 mol%, and K 2 O 1 to 5 mol%.
  • the Al 2 O 3 is a component that improves chemical durability, and the content of the Al 2 O 3 may be 1 to 10 mol%, preferably 2 to 6 mol%, based on the total number of moles of the glass powder.
  • the content of Al 2 O 3 is less than 1 mol%, the effect of improving chemical durability may be insignificant, and if the content of Al 2 O 3 exceeds 10 mol%, the meltability of the glass matrix may tend to deteriorate.
  • the SnO 2 is a component capable of lowering the temperature of thermal properties such as glass transition temperature, yield point, and softening point (Ts), and the content of the SnO 2 is 0.1 to 7 mol%, preferably 0.1 to 7 mol% based on the total number of moles of the glass powder. may be 0.2 to 6 mol%.
  • the effect of lowering the thermophysical temperature may be insignificant, and if the content of SnO 2 exceeds 7 mol%, devitrification due to Sn in the glass during melting Water (particularly, tetravalent tin water) tends to precipitate and the transmittance decreases, and as a result, it may be difficult to obtain a wavelength conversion member having high luminous efficiency, and it may be difficult to vitrify by melting separation.
  • the BaO is a component that improves solubility by lowering the melting temperature, and has an effect of promoting glass powder phase and suppressing the reaction with phosphor powder.
  • the content of BaO may be 1 to 5 mol%, preferably 1 to 4 mol%, based on the total number of moles of the glass powder.
  • the effect of improving solubility may be insignificant, and if the content of BaO exceeds 5 mol%, chemical durability is lowered, and the tendency to glass phase is excessively increased, so that even a small change in heat treatment temperature
  • the state of the image may fluctuate greatly, and it may be easy to cause variations in light diffusivity between lots of wavelength conversion members.
  • SrO is a component that improves solubility by lowering the melting temperature, and has an effect of promoting glass powder phase and suppressing the reaction with phosphor powder.
  • the content of SrO may be 0.1 to 5 mol%, preferably 0.1 to 4 mol%, based on the total number of moles of the glass powder.
  • the effect of improving the solubility may be insignificant, and if the content of SrO exceeds 5 mol%, chemical durability is lowered, and the glass phase tendency is excessively large, so that even a small change in heat treatment temperature
  • the state of the image may fluctuate greatly, and it may be easy to cause variations in light diffusivity between lots of wavelength conversion members.
  • the CaO is a component that improves solubility by lowering the melting temperature, and has an effect of promoting glass powder phase and suppressing the reaction with phosphor powder.
  • the CaO content may be 1 to 5 mol%, preferably 1 to 4 mol%, based on the total number of moles of the glass powder.
  • the effect of improving solubility may be insignificant, and if the content of CaO exceeds 5 mol%, chemical durability is lowered, and the tendency to glass phase is excessively increased, so that even a small change in heat treatment temperature
  • the state of the image may fluctuate greatly, and it may be easy to cause variations in light diffusivity between lots of wavelength conversion members.
  • the Li 2 O is a component that lowers the softening point, and the content of the Li 2 O may be 1 to 5 mol%, preferably 2 to 5 mol%, based on the total number of moles of the glass powder.
  • the effect may be insignificant, and if the content of Li 2 O exceeds 5 mol%, chemical durability may be lowered, and the glass phase tendency may be excessively increased, resulting in increased light scattering loss. can In addition, there may be a problem in that weather resistance is lowered and light emission intensity is lowered over time due to light irradiation of LED or LD.
  • the Na 2 O is a component that lowers the softening point, and the content of the Na 2 O may be 1 to 7 mol%, preferably 2 to 6 mol%, based on the total number of moles of the glass powder.
  • the effect may be insignificant, and if the content of Na 2 O exceeds 7 mol%, chemical durability may be lowered, and the glass phase tendency may be excessively increased, resulting in increased light scattering loss. can In addition, there may be a problem in that weather resistance is lowered and light emission intensity is lowered over time due to light irradiation of LED or LD.
  • the K 2 O is a component that lowers the softening point, and the content of the K 2 O may be 1 to 5 mol%, preferably 2 to 5 mol%, based on the total number of moles of the glass powder.
  • the effect may be insignificant, and if the content of K 2 O exceeds 5 mol%, chemical durability may be lowered, and the glass phase tendency may be excessively increased, resulting in increased light scattering loss.
  • LED light emitting diode
  • LD laser diode
  • the glass powder may further include 0.1 to 7 mol% of SnO 2 , such as 0.2 to 6 mol%, and 1 to 10 mol% of Al 2 O 3 , such as 2 to 6 mol%, based on the total number of moles of the glass powder.
  • the glass powder may further include 1 to 5 mol% of BaO, 0.1 to 5 mol% of SrO, and 1 to 5 mol% of CaO, based on the total number of moles of the glass powder.
  • the glass powder may further include 1 to 5 mol% of K 2 O, 1 to 5 mol% of Na 2 O, and 1 to 5 mol% of Li 2 O, based on the total number of moles of the glass powder.
  • the glass powder may further include Na 2 O and K 2 O, Na 2 O and Li 2 O, or Li 2 O and K 2 O as alkali metal oxides.
  • the total content of these components is appropriately adjusted in the range of 2 to 15 mol%, preferably 3 to 10 mol% based on the total number of moles of the glass powder It is desirable to do
  • the glass powder may have an average particle diameter (D 50 ) of 2 ⁇ m to 15 ⁇ m, preferably 5 ⁇ m to 15 ⁇ m.
  • the average particle diameter (D 50 ) of the glass powder is less than 2 ⁇ m, the amount of bubbles generated during firing increases, and bubbles may remain in the wavelength conversion layer.
  • the porosity of the wavelength conversion layer is preferably 5% or less, 3% or less, particularly 1% or less. If the porosity exceeds 5%, optical properties may deteriorate.
  • light scattering may be excessive and fluorescence intensity may be reduced due to scattering loss.
  • moisture or the like easily penetrates into the inside of the wavelength conversion layer, thereby deteriorating chemical durability.
  • the average particle diameter (D 50 ) of the glass powder exceeds 15 ⁇ m, it is difficult for the phosphor powder to be uniformly dispersed in the wavelength conversion layer, and as a result, fluorescence intensity of the wavelength conversion layer may decrease or chromaticity deviation may occur.
  • the glass matrix may have a refractive index of 1.44 to 1.89.
  • the refractive index of the glass matrix may be preferably 1.57 to 1.85, more preferably 1.60 to 1.84.
  • the glass matrix may have a softening point (Ts) of 550 to 850°C.
  • the softening point (Ts) of the glass matrix may be preferably 550 to 630 °C and more preferably 550 to 600 °C.
  • the glass matrix preferably has a softening point (Ts) of 550°C or higher.
  • a softening point (Ts) of 550°C or higher. Examples of such a glass matrix include a boron silicate-based glass matrix or a P 2 O 5 -ZnO-SiO 2 -B 2 O 3 based glass matrix.
  • the phosphor powder may be present while being uniformly dispersed in the glass matrix.
  • a wavelength conversion member having excellent heat resistance can be provided.
  • the phosphor powder may include phosphor powder that exhibits fluorescence of a wavelength longer than the wavelength of the excitation light when ultraviolet or visible light excitation light is incident thereon.
  • white light is obtained by mixing the transmitted excitation light and the fluorescence of the phosphor powder, so white LEDs are used. can be easily manufactured.
  • the excitation light of visible light has a dominant wavelength of 430 to 490 nm and the fluorescence of the phosphor powder has a dominant wavelength of 530 to 590 nm, it may be advantageous to provide white light.
  • the phosphor powder may have an average particle diameter (D 50 ) of 3 to 30 ⁇ m, preferably 3 to 20 ⁇ m, and more preferably 3 to 15 ⁇ m.
  • D 50 average particle diameter of the phosphor powder
  • the average particle diameter (D 50 ) of the phosphor powder is less than 3 ⁇ m, the phosphor powders are easily aggregated and the luminous intensity may decrease, and when the average particle diameter (D 50 ) of the phosphor powder exceeds 30 ⁇ m, the wavelength conversion member This is undesirable because the efficiency of the film is lowered and the color deviation is increased.
  • the type of the phosphor powder is not particularly limited.
  • nitride phosphor powder, oxynitride phosphor powder, oxide phosphor powder including garnet phosphor powder such as YAG phosphor powder), sulfide phosphor powder, oxysulfide phosphor powder, halide phosphor powder (fluoride and chloride, etc.) and Aluminic acid chloride phosphor powder etc.
  • these phosphor powders nitride phosphor powder, oxynitride phosphor powder, and oxide phosphor powder have high heat resistance and are not easily deteriorated during firing, and are particularly suitable as phosphor powders used in wavelength conversion members for white LED devices.
  • the phosphor powder is preferably an oxide phosphor powder or an aluminate chloride phosphor powder.
  • the oxide phosphor powder or aluminate chloride phosphor powder is yttrium-aluminium-garnet (YAG), lutetium-aluminium-garnet (LuAG), nitride, or sulfide. It may include at least one type of phosphor powder selected from the group consisting of sulfide-based and silicate-based materials.
  • the phosphor powder may be a phosphor powder having an emission wavelength range of visible light region, for example, 380 nm to 780 nm.
  • the phosphor powder may include at least one selected from blue, green, red, and yellow light-emitting particles.
  • the blue, green, red, and yellow light-emitting particles mean particles that emit blue, green, red, and yellow fluorescence, respectively.
  • the blue light emitting particles include a phosphor powder having a light emitting wavelength range of 440 nm to 480 nm
  • the green light emitting particles include a phosphor powder having a light emitting wavelength range of 500 nm to 540 nm
  • the yellow light emitting particles include a phosphor powder having a light emitting wavelength range of 540 nm to 540 nm.
  • the red emission particles may include phosphor powder having an emission wavelength range of 660 nm to 700 nm.
  • the blue light-emitting particles include (Sr,Ba)MgAl 10 O 17 :Eu 2+ ; (Sr,Ba) 3 MgSi 2 O 8 :Eu 2+ and the like.
  • the green light-emitting particles include SrAl 2 O 4 :Eu 2+ ; SrBaSiO 4 :Eu 2+ ; (Y,Lu) 3 (Al,Gd) 5 O 12 :Ce 3+ ; SrSiON:Eu 2+ ; BaMgAl 10 O 17 : Eu 2+ , Mn 2+ ; Ba 2 MgSi 2 O 7 Eu 2+ ; Ba 2 SiO 4 :Eu 2+ ; Ba 2 Li 2 Si 2 O 7 :Eu 2+ ; BaAl 2 O 4 :Eu 2+ and the like, and when irradiating blue excitation light with a wavelength of 440 nm to 480 nm, the green light-emitting particles include SrAl 2 O 4 :Eu 2+ ; SrBaSiO 4
  • La 3 Si 6 N 11 :Ce 3+ may be mentioned as the yellow light emitting particles, and blue light having a wavelength of 440 nm to 480 nm may be used.
  • examples of the yellow light emitting particles include (Y,Lu) 3 (Al,Gd) 5 O 12 :Ce 3+ ; Sr 2 SiO 4 :Eu 2+ etc. are mentioned.
  • the red light-emitting particles include CaGa 2 S 4 :Mn 2+ ; MgSr 3 Si 2 O 8 : Eu 2+ , Mn 2+ ; Ca 2 MgSi 2 O 7 :Eu 2+ , Mn 2+ and the like, and when irradiating blue excitation light with a wavelength of 440 nm to 480 nm, the red light-emitting particles include CaAlSiN 3 : Eu 2+ ; CaSiN 3 :Eu 2+ ; (Ca,Sr) 2 Si 5 N 8 :Eu 2+ ; ⁇ -SiAlON:Eu 2+ etc. are mentioned.
  • various phosphor powders may be mixed and used according to excitation light and emission wavelengths.
  • phosphor powder including blue, green, yellow, or red light emitting particles may be used.
  • the phosphor powder may have a refractive index of 1.5 to 2.4.
  • the phosphor powder has a refractive index within the above range, a difference in refractive index with the air layer is large, and reflection loss on the surface of the wavelength conversion layer is large.
  • reflection loss on the surface of the phosphor powder can be reduced, thereby realizing high efficiency.
  • the content of the phosphor powder in the wavelength conversion member is 5 to 50% by weight, preferably 10 to 40% by weight, more preferably 10% by weight, based on the total weight of the glass matrix and the phosphor powder. to 30% by weight.
  • the content of the phosphor powder is too small, it may be difficult to obtain desired white light due to an insufficient amount of light emission, and if the content of the phosphor powder is too large, sintering becomes difficult and fluorescence intensity is lowered because excitation light is not sufficiently irradiated to the entire phosphor powder. There is a risk of becoming In addition, pores are easily generated in the wavelength conversion member, and it may be difficult to obtain a dense structure.
  • the wavelength conversion member according to an embodiment of the present invention is disposed on at least one surface of the wavelength conversion layer and includes an antireflection layer capable of improving luminous efficiency by suppressing light scattering or reflection at an interface with the wavelength conversion layer. do.
  • the antireflection layer 130 may be disposed on one surface of the wavelength conversion layer 120 .
  • the anti-reflection layer includes a first anti-reflection layer 130 and a second anti-reflection layer 135, and the first anti-reflection layer 130 and the second anti-reflection layer 135 respectively It may be disposed on both sides of the wavelength conversion layer 120 .
  • the antireflection layer may be disposed on the light input/output surface of the wavelength conversion layer.
  • at least one of excitation light incident on the wavelength conversion layer and fluorescence emitted from the wavelength conversion layer may transmit through the antireflection layer.
  • the antireflection layer is preferably fused to the wavelength conversion layer. In this case, it is possible to suppress light scattering or reflection at the interface between the wavelength conversion layer and the antireflection layer, thereby improving luminous efficiency and achieving high efficiency. In addition, the antireflection layer can reduce fluorescence emitted from the phosphor powder from being reflected on the surface, thereby improving the luminous efficiency of the fluorescence.
  • the antireflection layer may improve incident efficiency of the excitation light to the wavelength conversion layer by reducing reflection of the excitation light incident on the wavelength conversion layer.
  • the antireflection layer includes silica derived from colloidal silica.
  • the colloidal silica is obtained by reacting silicate with dilute hydrochloric acid or hydrolyzing hydrogen halide followed by dialysis, and is a suspension of silicon dioxide hydrate.
  • the colloidal silica is SiO 2 and/or a hydrate thereof, and silicic acid does not have a fixed structure.
  • the colloidal silica is in a sol state that hardly precipitates at room temperature, and may be an aqueous colloidal solution of ultrafine particles called silica sol.
  • the colloidal silica may have a SiO 2 concentration of, for example, about 40%.
  • Silica derived from the colloidal silica can be monodispersed in a solvent compared to general dry silica or silica produced from other precipitation methods, has the largest primary particle size and sharp particle size distribution, and has a specific surface area (Brunauer-Emmett-Teller Method; BET) is low and film formability is excellent.
  • BET Brunauer-Emmett-Teller Method
  • the colloidal silica is difficult to aggregation or sedimentation and has a low oil absorption, which may be advantageous in obtaining the antireflection layer desired in the present invention.
  • An anti-reflection layer may be a porous anti-reflection layer having substantially air gaps.
  • the refractive index of the antireflection layer may be lowered by including silica derived from colloidal silica having pores or pores therein and having a refractive index of 1.20 to 1.50.
  • the refractive index of the silica derived from the colloidal silica may be, for example, 1.35 to 1.50, preferably 1.35 to 1.45, and more preferably 1.38 to 1.45.
  • the refractive index of the antireflection layer may be similar to or the same as that of silica derived from colloidal silica.
  • the antireflection layer has a low refractive index because it has voids or pores therein. That is, by including an antireflection layer having a low refractive index on at least one surface of the wavelength conversion layer, a difference in refractive index between the wavelength conversion layer and the antireflection layer and a difference in refractive index between the wavelength conversion layer, the antireflection layer, and the air layer can be reduced. As a result, light scattering and reflection loss at the interface of each layer are reduced, and light extraction efficiency can be improved.
  • the concentration of the phosphor powder when the concentration of the phosphor powder is high, the concentration of the phosphor powder on the surface of the wavelength conversion layer increases, and in some cases, the phosphor powder is exposed on the surface of the wavelength conversion layer, so that the effect can be more effectively exhibited.
  • the refractive index of the antireflection layer is too low, it may be difficult to exhibit the antireflection function as the antireflection layer, so it is preferable to control the refractive index of the antireflection layer by including silica derived from colloidal silica having an appropriate refractive index. .
  • Silica derived from the colloidal silica can be measured using, for example, an Abbe refractometer.
  • silica powder derived from colloidal silica pulverized in a mortar is immersed in a first organic solvent, and then a second organic solvent is added to silica derived from the colloidal silica. Add little by little until the powder becomes almost transparent to obtain a mixed solution.
  • the refractive index of the mixed solution can be measured using an Abbe refractometer, for example, at 23° C., at a D-line (wavelength: 589 nm).
  • the first organic solvent may be a solvent having a lower refractive index than silica powder derived from colloidal silica
  • the second organic solvent may be a solvent having a higher refractive index than silica powder derived from colloidal silica.
  • the first organic solvent and the second organic solvent may be selected from the group consisting of, for example, 1, 1, 1, 3, 3, 3-hexafluoro-2-propanol, 2-propanol, chloroform, carbon tetrachloride, toluene and glycerin depending on the refractive index.
  • One or more may be selected from the group consisting of.
  • the silica derived from colloidal silica included in the antireflection layer may include silica derived from spherical colloidal silica (spherical silica) and/or silica derived from porous colloidal silica (porous silica). In this case, it is more advantageous to obtain an excellent antireflection function.
  • the average particle diameter (D 50 ) of the spherical silica may be 5 to 100 nm, preferably 10 to 80 nm, and more preferably 10 to 40 nm. .
  • the average particle diameter (D 50 ) of the spherical silica satisfies the above range, the desired thickness of the anti-reflection layer may be realized and the characteristics of the anti-reflection layer may be improved.
  • the silica derived from the colloidal silica includes porous silica, it exhibits relatively high viscosity and good fluidity, and has excellent film forming properties, so that even when a small amount of inorganic binder is used, there is no large crack and an antireflection layer with a thick thickness can be obtained.
  • the antireflection layer may include silica derived from colloidal silica having an average pore diameter of 2 to 100 nm and a cumulative pore volume of 0.7 to 2.0 cc/g as measured by a mercury porosimeter.
  • the refractive index of the antireflection layer can be controlled within the range of the target in the present invention.
  • the difference in refractive index of each layer constituting the wavelength conversion member is reduced, and light scattering and reflection loss at the interface of each layer can be reduced, thereby improving light extraction efficiency.
  • the antireflection layer may further include an inorganic binder, and silica derived from the colloidal silica may be dispersed in the inorganic binder.
  • the antireflection layer according to the embodiment of the present invention preferably has a structure in which silica derived from colloidal silica is uniformly dispersed in an inorganic binder including, for example, tetraethyl orthosilicate (TEOS). It is not limited to this.
  • TEOS is represented by the chemical formula Si(OC 2 H 5 ) 4 , and may react with water to generate silicon dioxide (SiO 2 ) as shown in Scheme 1 below:
  • the inorganic binder includes TEOS, since it has the same silicon dioxide (SiO 2 ) component as the silica derived from the colloidal silica, the refractive index is low and the thermal expansion coefficient is the same, cracks caused by the difference in thermal expansion coefficient It is small, has very good compatibility with silica derived from colloidal silica, and the antireflection function can be fully exhibited.
  • SiO 2 silicon dioxide
  • silica derived from the colloidal silica is dispersed in an inorganic binder, and the weight ratio of the silica derived from the colloidal silica to the weight of the inorganic binder is 1 to 5 can be
  • the silica derived from the inorganic binder and the colloidal silica satisfy the weight ratio range, it may be advantageous to achieve the effect of the antireflection layer desired in the present invention.
  • the antireflection layer may have a thickness of 30 to 600 nm, preferably 30 to 500 nm, and more preferably 50 to 300 nm.
  • the anti-reflection layer includes silica derived from colloidal silica, the anti-reflection layer having a thickness of several tens to hundreds of nanometers may be obtained.
  • the thickness of the antireflection layer is too thick, excitation light or fluorescence is easily absorbed, and the content of the phosphor powder occupied in the entire wavelength conversion member is relatively small, so that the luminous efficiency of the wavelength conversion member is easily lowered and cracks may easily occur. there is. Conversely, if the thickness of the anti-reflection layer is too thin, it may be difficult to obtain a desired anti-reflection function.
  • the center line average roughness (Ra) of the antireflection layer may be 3 ⁇ m or less, preferably 1 ⁇ m or less, and more preferably 0.5 ⁇ m or less.
  • the center line average roughness (Ra) can be measured using a two-dimensional contact type surface roughness meter (SE3300 from Kosaka).
  • SE3300 two-dimensional contact type surface roughness meter
  • the center line average roughness (Ra) is a surface roughness according to KS B 0161, and is a value obtained by obtaining the sum of the arithmetic mean roughness and the entire upper and lower sides of the center line of the reference length, and dividing the value by the length of the measurement section.
  • the total light transmittance of the antireflection layer is 70% or more, 80% or more, particularly 90 % or more is preferred.
  • the wavelength conversion member according to an embodiment of the present invention has a thickness of 100 to 1,000 ⁇ m, preferably 100 to 800 ⁇ m, more preferably 100 to 500 ⁇ m, still more preferably 100 to 300 ⁇ m, from the viewpoint of suppressing absorption of excitation light or fluorescence. It may have a thickness of ⁇ m.
  • the wavelength conversion member has a thickness of 100 ⁇ m or more, handling is easy, and cracks can be prevented when the wavelength conversion member is cut into a desired size.
  • the thickness of the wavelength conversion member is 1,000 ⁇ m or less, the amount of light flux passing through the wavelength conversion member can be maintained high. If the thickness of the wavelength conversion member is too thick, the luminous efficiency of the phosphor may decrease.
  • the wavelength conversion member may have a light transmittance of 85 to 95%. Specifically, the wavelength conversion member may have a light transmittance of 85 to 92% or 85 to 90%.
  • the wavelength conversion member may have a light flux ⁇ v of 66 to 75 lm. Specifically, the wavelength conversion member may have a light flux ⁇ v of 66 to 72lm or 66 to 70lm.
  • the wavelength conversion member may have a converted luminous flux of 98% to 105%. Specifically, the wavelength conversion member may have a converted luminous flux of 98% to 103% or 98% to 102%.
  • the luminous flux and the converted luminous flux can be obtained by measuring the chromaticity distribution using an integrating sphere measuring instrument (LMS-200, J&C Tech.) using a 445 nm excitation light source.
  • LMS-200 integrating sphere measuring instrument
  • the wavelength conversion member may have parallel light (straight line) transmittance measured according to JIS K7105 of 20% or less, preferably 10% or less.
  • parallel light transmittance measured according to JIS K7105 of 20% or less, preferably 10% or less.
  • the wavelength conversion member may have a haze of 70% or more, preferably 75% or more, as measured according to JIS K7105.
  • the present invention provides a method for manufacturing the wavelength conversion member.
  • a method of manufacturing a wavelength conversion member according to an embodiment of the present invention includes forming a wavelength conversion layer on a substrate (S110); and forming an antireflection layer containing silica derived from colloidal silica on at least one surface of the wavelength conversion layer (S120).
  • the manufacturing method of the wavelength conversion member according to an embodiment of the present invention a glass matrix on a substrate; and forming a wavelength conversion layer including phosphor powder dispersed in the glass matrix; and forming an antireflection layer on at least one surface of the wavelength conversion layer, wherein the antireflection layer includes silica derived from colloidal silica.
  • the first step ( S110 ) includes forming a wavelength conversion layer on a substrate.
  • the first step (S110) includes obtaining a composition for forming a wavelength conversion layer (step 1-1); obtaining a green sheet for forming a wavelength conversion layer by applying the composition for forming a wavelength conversion layer on a substrate (step 1-2); and forming a wavelength conversion layer by firing the green sheet for the wavelength conversion layer (step 1-3).
  • the first step S110 may include obtaining a composition for forming the wavelength conversion layer (step 1-1).
  • the step of obtaining the composition for forming the wavelength conversion layer (step 1-1) is to form a wavelength conversion layer comprising a glass matrix and a phosphor powder dispersed in the glass matrix, the glass powder capable of forming the glass matrix. And, it may be a step of preparing a composition for forming a wavelength conversion layer containing a phosphor powder.
  • Each type and content of the glass powder and the phosphor powder are as described above.
  • the content of each component in the composition for forming a wavelength conversion layer may be considered equal to the content of each component included in the wavelength conversion layer formed after firing.
  • composition for forming the wavelength conversion layer may further include a binder resin and a solvent.
  • the binder resin may include at least one selected from the group consisting of polyvinyl butyral (PVB), polyvinyl alcohol (PVA), and polyvinyl acetate (PVAc).
  • the binder resin may include polyvinyl butyral (PVB) or polyvinyl alcohol (PVA).
  • the binder resin may have a weight average molecular weight of 1,000 to 70,000 g/mol. Specifically, the binder resin may have a weight average molecular weight of 20,000 to 60,000 g/mol.
  • the solvent may have a low boiling point for rapid production of green sheets. Specifically, the solvent may have a boiling point of 30 to 150 °C. More specifically, the solvent may have a boiling point of 60 to 130 °C.
  • the solvent may include at least one selected from the group consisting of toluene, ethanol, butanol, acetone, and methanol. Specifically, the solvent may include at least one selected from the group consisting of toluene, ethanol and butanol. For example, the solvent may include toluene, ethanol and butanol.
  • the solvent may be included in an amount suitable for characteristics and drying conditions of the composition for forming the wavelength conversion layer. Specifically, the solvent may be included in an amount of 30 to 50% by weight based on the total weight of the composition for forming the wavelength conversion layer.
  • the composition for forming the wavelength conversion layer may further include a plasticizer.
  • the plasticizer may include at least one selected from the group consisting of DOP (dioctyl phthalate), DOA (dioctyl adipate) and TCP (tricresyl phosphate).
  • the plasticizer may include dioctyl phthalate (DOP) and dioctyl adipate (DOA).
  • the plasticizer may be included in an amount of 10 to 200 parts by weight based on 100 parts by weight of the binder resin. Specifically, the plasticizer may be included in an amount of 30 to 90 parts by weight based on 100 parts by weight of the binder resin.
  • the composition for forming the wavelength conversion layer may be prepared by mixing a solvent and a binder resin, removing air bubbles to obtain a binder solution, and then mixing the binder solution, glass powder, phosphor powder, and a plasticizer. Since the present invention uses a solvent having a low boiling point, the binder resin and the solvent may be mixed at room temperature when preparing the composition for forming the wavelength conversion layer.
  • the first step (S110) may include a step (step 1-2) of obtaining a green sheet for the wavelength conversion layer by applying the composition for forming the wavelength conversion layer on a substrate.
  • the composition for forming the wavelength conversion layer is applied onto a substrate.
  • the application may be performed using a tape casting method or a doctor blade.
  • a polyester-based substrate may be used as the substrate, and for example, a resin film such as polyethylene terephthalate (PET) may be used.
  • PET polyethylene terephthalate
  • the green sheet for the wavelength conversion layer may be a single sheet, or may be obtained by stacking and compressing a plurality of green sheets for the wavelength conversion layer manufactured by casting.
  • the number of stacked green sheets for the wavelength conversion layer is not particularly limited, and for example, the green sheets for the wavelength conversion layer may be stacked to have a thickness of 50 to 1,500 ⁇ m after compression.
  • the compression may be performed at a pressure of 1 to 100 MPa. Specifically, the compression may be performed at a pressure of 2 to 50 MPa.
  • the first step ( S110 ) may include firing the green sheet for the wavelength conversion layer.
  • the firing temperature is preferably within a range of ⁇ 100°C of the softening point of the glass matrix, specifically within a range of ⁇ 50°C of the softening point of the glass matrix. If the sintering temperature is too low, fusion of each layer may be difficult, sintering of the glass powder may be insufficient, or mechanical strength of the wavelength conversion member may be reduced. On the other hand, if the firing temperature is too high, the emission intensity of the wavelength conversion member may decrease.
  • the firing may be performed at 450 to 950 °C for 10 minutes to 72 hours. Specifically, the firing may be performed at 600 to 800 °C for 10 to 52 hours.
  • a degreasing process of removing organic materials may be performed before firing, that is, before firing after compressing the green sheet for the wavelength conversion layer.
  • heat-compression may be appropriately applied to increase adhesion to each other.
  • the manufacturing method may further include a processing step by grinding, polishing, and re-pressing, if necessary, after the firing.
  • the second step (S120) includes forming an antireflection layer including silica derived from colloidal silica on at least one surface of the wavelength conversion layer.
  • a coating agent for the anti-reflection layer may be prepared to form the anti-reflection layer.
  • the coating agent for the antireflection layer may include colloidal silica.
  • colloidal silica By including the colloidal silica in the coating agent for the antireflection layer, an antireflection layer including silica having an average particle diameter (D 50 ) and a refractive index as described above may be implemented.
  • the coating agent for the anti-reflection layer may further include a first solvent.
  • the first solvent may include at least one selected from the group consisting of toluene, ethanol, isopropyl alcohol, butanol, acetone, and methanol.
  • the first solvent may include at least one selected from the group consisting of toluene, ethanol, isopropyl alcohol, and butanol.
  • a mixed solution of ethanol and isopropyl alcohol may be used as the first solvent.
  • the coating agent for the antireflection layer may be obtained by adding colloidal silica to the first solvent in a dropwise manner and mixing.
  • the coating agent for the antireflection layer may be obtained by adding colloidal silica to the first solvent in a dropwise manner and stirring at a rate of about 300 rpm to 1,000 rpm for about 3 hours to 10 hours at 25 to 50 ° C. .
  • the colloidal silica may be used in an amount of 10 to 30% by weight, preferably 15 to 25% by weight based on the total weight of the coating agent for the antireflection layer.
  • the coating agent for the anti-reflection layer may further include an inorganic binder.
  • the coating agent for the antireflection layer may include a binder solution including an inorganic binder and colloidal silica.
  • the inorganic binder may include tetraethyl orthosilicate (TEOS).
  • TEOS tetraethyl orthosilicate
  • the binder solution may include TEOS as the inorganic binder, an acid-based material, and a second solvent.
  • the acid-based material may include at least one selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, hydrobromic acid, hydroiodic acid, and perchloric acid.
  • the second solvent may include at least one selected from the group consisting of toluene, ethanol, isopropyl alcohol, butanol, acetone, and methanol.
  • the second solvent may include at least one selected from the group consisting of toluene, ethanol, isopropyl alcohol, and butanol.
  • the second solvent may include ethanol.
  • the inorganic binder may be used in an amount of 1.0 to 7% by weight, preferably 1.5 to 7% by weight based on the total weight of the binder solution.
  • the acid-based material may be used in an amount of 0.5 to 3% by weight, preferably 1 to 1.5% by weight based on the total weight of the binder solution.
  • the binder solution is obtained by stirring the acid-based material and the second solvent, adding the inorganic binder, for example, in a dropwise manner, and stirring at a speed of about 100 rpm to 1,000 rpm for 8 hours to 20 hours.
  • the coating agent for the antireflection layer includes an inorganic binder
  • the first solvent and the binder solution are first mixed, and colloidal silica is added to the solution in a dropwise manner to obtain a second mixture. can do.
  • the first mixing may be performed for about 1 minute to 30 minutes at a temperature of 20 to 50° C. and a speed of 300 to 1,000 rpm.
  • the second mixing may be performed at a speed of about 300 rpm to about 1,000 rpm for about 3 to 10 hours at 20 to 50°C.
  • An antireflection layer may be formed by applying the coating agent for the antireflection layer to at least one surface of the wavelength conversion layer.
  • the coating may be performed by a commonly used coating method, and examples thereof include spin coating, bar coating, spray coating, and dip coating.
  • the second step ( S120 ) may further include applying the coating agent for the antireflection layer to at least one surface of the wavelength conversion layer and then drying it.
  • the drying may be performed at 200 to 400° C. for about 0.5 to 2 hours.
  • the antireflection layer obtained after drying is an organosol obtained by dispersing colloidal silica and a binder component constituting the binder in a solvent. That is, an antireflection layer containing a binder and silica derived from colloidal silica dispersed in the binder can be formed by drying the solvent by drying and gelling it.
  • the formed antireflection layer may have a thickness of 30 to 600 nm, preferably 30 to 500 nm, and more preferably 50 to 300 nm.
  • An embodiment of the present invention is the wavelength conversion member; and a light source for radiating excitation light to the wavelength conversion member.
  • a light emitting device by combining the wavelength conversion member with a light source for irradiating excitation light of phosphor powder.
  • a light source a semiconductor light emitting device such as a light emitting diode (LED) and a laser diode (LD) may be used.
  • a plurality of the semiconductor light emitting device may be used.
  • the light emitting device may have a structure in which the wavelength conversion member is disposed to directly contact the semiconductor light emitting device.
  • the semiconductor light emitting device and the wavelength conversion member may have a sequentially stacked structure.
  • the semiconductor light emitting element may be disposed to be surrounded by the wavelength conversion member, or the wavelength conversion member may have a structure disposed to be surrounded by the semiconductor light emitting element.
  • the semiconductor light emitting device and the wavelength conversion member may be spaced apart from each other.
  • Each component was mixed to have the composition shown in Table 1 below, and melted at 1,200° C. to prepare a glass product.
  • the prepared glass material was pulverized to prepare a glass powder having an average particle diameter of 5.9 ⁇ m.
  • Example 1 Manufacture of a wavelength conversion member
  • a composition for forming a wavelength conversion layer was prepared by mixing at a weight ratio of 15.
  • the binder solution is dissolved by putting 15 g of polyvinyl butyral (PVB, weight average molecular weight: 50,000 g/mol) in 81 g of a solvent (including toluene and ethanol in a volume ratio of 3: 1) at room temperature for 1 hour. It was prepared by
  • the composition for forming a wavelength conversion layer obtained in 1-1 was applied on a PET film according to a tape casting method and molded into a sheet shape to obtain a green sheet for a wavelength conversion layer having a thickness of 50 ⁇ m. Twenty-one sheets of the above green sheets were stacked and pressed at a pressure of 14 MPa to obtain a green sheet for a wavelength conversion layer.
  • the wavelength conversion layer was formed by firing the green sheet for the wavelength conversion layer obtained in 1-2 above at 600° C. for 12 hours.
  • TEOS tetraethyl orthosilicate
  • the coating agent for the antireflection layer obtained in i) of 1-4 was applied to one surface of the wavelength conversion layer obtained in 1-3 to obtain a wavelength conversion member including an antireflection layer having a coating thickness shown in Table 2 below.
  • spin coating was performed, and after the coating, an antireflection layer was formed by drying at 200° C. for 30 hours.
  • the refractive index of the glass matrix was about 1.81
  • the refractive index of the phosphor powder was about 1.82
  • the refractive index of silica derived from colloidal silica was about 1.43
  • D 50 was 12 nm.
  • a wavelength conversion member was manufactured in the same manner as in Example 1, except that D 50 of the silica derived from colloidal silica and the coating thickness of the antireflection layer were changed in 1-4 of Example 1 as shown in Table 2 below. did
  • Example 1 1-4 as shown in Table 2 below, an antireflection layer was formed on both sides of the wavelength conversion layer, and the D 50 of silica derived from colloidal silica and the coating thickness of the antireflection layer were varied. , A wavelength conversion member was manufactured in the same manner as in Example 2.
  • a wavelength conversion member was manufactured in the same manner as in Example 1, except that D 50 of the silica derived from colloidal silica and the coating thickness of the antireflection layer were changed in 1-4 of Example 1 as shown in Table 2 below. did
  • Example 2 As shown in Table 2 below, a wavelength conversion member was manufactured in the same manner as in Example 1, except that the anti-reflective layer of Example 1-4 was not formed.
  • a wavelength conversion member was manufactured in the same manner as in Example 1, except that common silica (Reolosil QS-20, manufactured by Tokuyama) was used instead of colloidal silica.
  • a wavelength conversion member was manufactured in the same manner as in Example 1, except that common silica (SO-E2 from Admatechs) was used instead of colloidal silica.
  • the measurement was performed using Professional Gemstone Refractometers (Kruess model ER601 LED, Germany). During measurement, the specimen was processed to a thickness of 1 mm (1T), and then a certain amount of refractory liquid was applied to the specimen measurement position so that it was completely adhered to the measurement part. The refraction gauge value was visually confirmed.
  • the refractive index of silica derived from colloidal silica was measured using an Abbe refractometer at 23°C and D line (wavelength 589 nm).
  • the center line average roughness (Ra) of the antireflection layer was measured using a two-dimensional contact type surface roughness meter (SE3300 manufactured by Kosaka).
  • the center line average roughness (Ra) is a surface roughness according to KS B 0161, and is a value obtained by obtaining the sum of the arithmetic mean roughness and the entire upper and lower sides of the center line of the reference length, and dividing the value by the length of the measurement section.
  • D 50 of the analysis value was measured as the particle diameter (D 50 ) when the cumulative volume concentration (%) reached 50% in the particle size distribution measurement by the laser light diffraction method.
  • the surface of the antireflection layer of the wavelength conversion member of Example 1 and the surface of the wavelength conversion member of Comparative Example 1 were observed according to the magnification using a scanning electron microscope (SEM).
  • FIG. 5 shows a scanning electron microscope (SEM) photograph obtained by analyzing the surface of the antireflection layer of the wavelength conversion member prepared in Example 1 at 150 magnification.
  • FIG. 6 shows a scanning electron microscope (SEM) photograph obtained by analyzing the surface of the wavelength conversion layer (glass) of the wavelength conversion member prepared in Comparative Example 1 at 1 magnification.
  • the light transmittance of light having a reference wavelength of 550 nm was measured using a Hitachi's magnetic spectrophotometer (U-350, Japan), and a state without a sample was taken as 100%.
  • Chromaticity distribution was measured by placing a wavelength conversion member on a 445 nm excitation light source using an integrating sphere measuring instrument (LMS-200, J&C Tech.).
  • the wavelength conversion members of Examples 1 to 7 including an anti-reflection layer containing silica derived from colloidal silica are comparative example 1 not including the anti-reflection layer, and the anti-reflection layer containing common silica.
  • the fluorescence intensity was better than that of the wavelength conversion members of Comparative Examples 2 and 3 including the anti-blocking layer, and optical properties such as light transmittance, light flux, and converted light flux were excellent.
  • the wavelength conversion members of Examples 1 to 7 had a light transmittance of 84.5 to 91.2%, a light flux of 66 to 69.2lm, and a converted light flux of 98.5 to 101.2%. All were excellent.
  • the wavelength conversion member when the D 50 of the silica is 12 to 30 nm is compared to the wavelength conversion member when the D 50 of the silica is 80 to 100 nm, as in Examples 6 and 7. It was found that all optical properties were improved.
  • antireflection layer first antireflection layer
  • antireflection layer (second antireflection layer)
  • silica derived from colloidal silica first silica

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Abstract

La présente invention concerne, selon un mode de réalisation, un élément de conversion de longueur d'onde et son procédé de fabrication, l'élément comprenant : une matrice de verre ; une couche de conversion de longueur d'onde comprenant une poudre de luminophore dispersée dans la matrice de verre ; et une couche antireflet formée sur au moins une surface de la couche de conversion de longueur d'onde, la couche antireflet comprenant de la silice colloïdale dérivée de silice. L'élément de conversion de longueur d'onde selon un mode de réalisation de la présente invention présente une intensité de fluorescence élevée, présente d'excellentes caractéristiques de lumière telles que la transmittance de la lumière, le un flux lumineux et un flux lumineux réduit, et présente une excellente efficacité d'extraction de la lumière et une excellente intensité lumineuse, et peut ainsi être efficacement utilisé dans un dispositif émetteur de lumière.
PCT/KR2022/009332 2021-06-29 2022-06-29 Élément de conversion de longueur d'onde et dispositif émetteur de lumière le comprenant WO2023277579A1 (fr)

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JP2018077324A (ja) * 2016-11-09 2018-05-17 日本電気硝子株式会社 波長変換部材及び発光装置
KR20190022441A (ko) * 2016-06-27 2019-03-06 니폰 덴키 가라스 가부시키가이샤 파장 변환 부재 및 그것을 사용하여 이루어지는 발광 디바이스
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JP4158012B2 (ja) 2002-03-06 2008-10-01 日本電気硝子株式会社 発光色変換部材
JP4895541B2 (ja) 2005-07-08 2012-03-14 シャープ株式会社 波長変換部材、発光装置及び波長変換部材の製造方法

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KR20130102033A (ko) * 2010-09-03 2013-09-16 가부시키가이샤 아데카 색 변환 필터
KR20140017249A (ko) * 2012-07-31 2014-02-11 일진엘이디(주) 반사 방지층을 포함하는 반도체 발광소자 패키지
KR20190022441A (ko) * 2016-06-27 2019-03-06 니폰 덴키 가라스 가부시키가이샤 파장 변환 부재 및 그것을 사용하여 이루어지는 발광 디바이스
JP2018077324A (ja) * 2016-11-09 2018-05-17 日本電気硝子株式会社 波長変換部材及び発光装置
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