WO2023277450A1 - Semiconductor manufacturing device - Google Patents

Abstract

A semiconductor manufacturing device according to the present embodiment comprises: an ultraviolet ray forming unit which is located in an ultraviolet ray forming chamber and forms ultraviolet rays of desired wavelengths by irradiating an intensive electron beam (e-beam) to form a linear plasma; a substrate driving unit which is located in a processing chamber in which a charged substrate is processed with the ultraviolet rays and comprises a chuck that supports the charged substrate, and an axis for rotating the chuck; and a window which is located between the ultraviolet ray forming unit and the processing chamber and allows the formed ultraviolet rays to pass through the processing chamber.

Description

semiconductor manufacturing equipment

The present technology relates to semiconductor manufacturing equipment.

Recently, as the integration of the semiconductor industry increases, the size and area of semiconductor devices tend to decrease. Accordingly, the size of the pattern forming the semiconductor device and the thickness of the thin film are decreasing, and in particular, factors that have not had a significant impact in the prior art are emerging as important factors in the development of semiconductor devices. One of these factors is static electricity built up on the substrate.

The causes of static electricity formed on the semiconductor substrate include the use of deionized water, charge transfer from a charged plastic material, or induction charge.

It is known that the static electricity of the semiconductor substrate is mainly generated in a photo process or a cleaning process using a rotational motion, and the most static electricity is concentrated in the center due to a difference in centrifugal force. That is, in the photo resist coating process, the high-speed rotation of the wafer increases the concentration of airflow in the center of the substrate by more than three times compared to the outer area, so that static electricity is formed around the center where the centrifugal force is relatively weak. Static electricity caused by a strong electric field formed in the center is charged on the surface of the wafer, inside the surface multilayer film, and on the photoresist pattern formed on the surface.

When the center of the semiconductor substrate is charged with a high voltage, the area corresponding to the center of the substrate is charged not only to the surface of the semiconductor substrate such as the photoresist pattern or oxide film, which is an insulator, but also to a certain depth on the substrate surface, resulting in low kinetic energy. A state in which neutralization by ions having is impossible may occur. The electrostatic voltage charged on the semiconductor substrate has many variables such as the type of process, material, and pattern shape, and is generally formed between -100V and +100V.

For example, when a charging voltage of 100 V or less is formed on an insulating film in a microcircuit within 10 nm or a semiconductor substrate in which a pattern P having an aspect ratio of “5” or more is formed, the pattern width is narrow and the ionizer It is difficult to remove the static electricity accumulated inside the thin film due to the self-neutralizing effect between the generated positive and negative ions and the low electromotive force caused by the low voltage difference between the semiconductor substrate and the ions.

Decay time within 1 to 2 seconds is required to reduce the static electricity charged at 1000V on the semiconductor substrate to within 100V using a soft Xray ionizer. However, when an initial charging voltage of 100V or less is formed, it takes a long time to reduce the charging voltage to a target voltage or less.

In addition, considering that the ion density of the ionizer is generally 106, when the ion density inside the oxide film under the photoresist in the semiconductor substrate is charged to 108 or higher, the static electricity formed on the semiconductor substrate can be removed using the conventional ionizer. can't

In this case, there may be a method of generating high-density plasma of 10 9 or more in a vacuum chamber to remove static electricity from the semiconductor substrate.

However, in the case of a vacuum chamber configuration, there may be a problem in that ions are additionally charged on the front surface due to self-bias and plasma uniformity according to the plasma type. In addition, microcircuits may be formed in an irregular pattern on the semiconductor substrate, and static electricity of different voltages may be charged in each part according to the characteristics of the pattern. That is, an electrostatic voltage of −20 to −50 V or higher may be distributed depending on the portion of the semiconductor substrate.

Therefore, when ions are uniformly supplied to the substrate, ions of the same intensity are emitted to the semiconductor substrate over the entire surface of the substrate, and accordingly, charging by overshooting is prevented in a region where a voltage level higher than the electrostatic voltage generated in the semiconductor substrate is applied. additional may occur.

Furthermore, when an electric charge is charged inside the oxide film and/or pattern, ions must be provided with high energy to neutralize static electricity, but when reactive radicals and/or reactive ions are irradiated to the substrate with high energy, the substrate and It may cause damage by colliding with the pattern formed on the surface of the substrate.

In particular, in the case of a semiconductor substrate having a micronized structure with a pattern of 10 nm or less, charging by positive ions, negative ions, or electrons has a greater influence on the performance and yield of semiconductor devices.

In this regard, Prior Document 1 (Korean Patent Registration No. 10-1698273) and Prior Document 2 (Korean Patent Publication No. 10-2004-0040106) disclose a configuration for removing static electricity from a semiconductor substrate using an ionizer.

This embodiment is intended to solve the above-mentioned difficulties of the prior art. That is, one of the problems to be solved in the present embodiment is to provide a device for neutralizing static electricity formed on a semiconductor substrate and a pattern located on the substrate.

The semiconductor manufacturing apparatus according to the present embodiment includes: an ultraviolet ray forming unit located in an ultraviolet ray forming chamber and irradiating an electron beam (e-beam) to form ultraviolet ray of a desired wavelength; a substrate driving unit including a chuck for supporting the loaded substrate located in a processing chamber where the loaded substrate is treated with the ultraviolet rays, and an axis for rotating the chuck; and a window positioned between the ultraviolet generation chamber and the processing chamber to transmit the formed ultraviolet rays into the processing chamber.

According to an aspect of the present embodiment, the ultraviolet ray generator further includes one or more reflective members that reflect the formed ultraviolet rays to the processing chamber.

According to an aspect of the present embodiment, the UV forming unit may include an electron beam irradiation unit for irradiating the electron beam; A gas supply unit and a vacuum forming unit configured to form a desired vacuum degree inside the ultraviolet generation chamber, wherein the electron beam collides with the provided gas to form ultraviolet rays having the desired wavelength.

According to one aspect of this embodiment, the gas supply unit provides any one or more of helium (He), oxygen (O2), and argon (Ar) gas.

According to one aspect of the present embodiment, the electron beam irradiator includes an electron gun and an electron beam steering device for steering the electron beam.

According to an aspect of the present embodiment, the ultraviolet ray forming chamber includes a plurality of regions in which a plurality of the ultraviolet ray forming units are respectively disposed.

According to an aspect of the present embodiment, the electron beam irradiator irradiates a concentrated linear electron beam (e-beam), and linear plasma is formed by the concentrated linear electron beam in the ultraviolet generation chamber to form ultraviolet rays.

According to an aspect of the present embodiment, the window has a pattern formed on at least one side of the window, or a filter is formed on at least one side of the window.

According to one aspect of this embodiment, at least a part of the window is formed of a material containing any one of sapphire, magnesium fluoride (MgF ₂ ), lithium fluoride (LiF ₂ ) and calcium fluoride (CaF ₂ ).

The semiconductor manufacturing apparatus according to the present embodiment includes: an ultraviolet ray forming unit located in an ultraviolet ray forming chamber and irradiating an electron beam (e-beam) to form ultraviolet ray of a desired wavelength; a substrate driving unit including a chuck for supporting the loaded substrate located in a processing chamber where the loaded substrate is treated with the ultraviolet rays, and an axis for rotating the chuck; a window positioned between the ultraviolet generation chamber and the processing chamber to transmit the ultraviolet rays into the processing chamber, and a grid plate accelerating and providing charged particles to the substrate, wherein the grid plate has a plurality of different radii. It includes electrode lines of, and a grid electrode in which a plurality of holes are formed in each electrode line.

According to one aspect of the present embodiment, the grid plate further includes a grid electrode extending in a first direction and a grid electrode extending in a second direction different from the first direction.

According to one aspect of the present embodiment, the semiconductor manufacturing apparatus further includes a grid plate control unit supplying a voltage corresponding to the electrostatic voltage formed on the substrate to the grid plate.

According to an aspect of the present embodiment, the UV forming unit irradiates the concentrated electron beam, and linear plasma is formed in the UV forming chamber by the concentrated linear electron beam to form ultraviolet rays.

According to the present embodiment, an advantage of neutralizing static electricity formed on a semiconductor substrate and a pattern located on the substrate is provided.

1 is a cross-sectional view showing the outline of a semiconductor manufacturing apparatus 10 according to the present embodiment.

FIG. 2(a) is a diagram showing the transmittance of magnesium fluoride (MgF ₂ ), which is one of the materials of the window 300, for each ultraviolet wavelength band. 2(b) is a diagram showing the transmittance of calcium fluoride (CaF ₂ ), which is one of the materials of the window 300, for each ultraviolet wavelength band.

3(a) is a diagram illustrating a state in which a pattern is formed on one surface of the window 300. Referring to FIG. 3( b ) is a diagram illustrating a state in which a filter 310 is formed on one side of the window 300 .

4 is a diagram illustrating another embodiment of a semiconductor manufacturing apparatus.

5(a) to 5(d) are plan views of window embodiments.

Figure 6 (a) is an exploded perspective view showing the outline of the grid plate, Figure 6 (b) is a plan view of the grid plate.

7 is a diagram schematically illustrating a manufacturing process of a first grid electrode.

8 is a view illustrating a shape in which first to third grid electrodes are stacked and disposed when viewed from above.

9 is a diagram for explaining the operation of the semiconductor manufacturing apparatus.

Hereinafter, this embodiment will be described with reference to the accompanying drawings. 1 is a cross-sectional view showing the outline of a semiconductor manufacturing apparatus 10 according to the present embodiment. Referring to FIG. 1 , a semiconductor manufacturing apparatus 10 according to the present embodiment is located in an ultraviolet forming chamber 11 and irradiates a concentrated electron beam (e-beam) to form linear plasma to form ultraviolet rays of a desired wavelength. An ultraviolet ray forming unit 100 forming an ultraviolet ray, a chuck 210 for supporting the loaded substrate positioned in the processing chamber 21 where the loaded substrate S is treated with the ultraviolet ray, and an axis for rotating the chuck a substrate driving unit 220 including (axis, 220); and a window 300 disposed between the ultraviolet generation chamber 11 and the processing chamber 21 and transmitting the formed ultraviolet rays into the processing chamber 21 .

The ultraviolet ray generator 100 irradiates a concentrated electron beam (e-beam) to form linear plasma to form ultraviolet rays of a desired wavelength. In one embodiment, the ultraviolet ray forming unit 100 includes an electron beam irradiation unit 110 for irradiating electron beams, a gas supply unit 120, and a vacuum forming unit 130 for forming the inside of the ultraviolet ray forming chamber 11 to a desired degree of vacuum. and, for example, a reflective member 140 that reflects and provides formed ultraviolet rays to the processing chamber 21 .

In one embodiment, the vacuum forming unit 130 maintains a vacuum inside the UV forming chamber 11 . For example, the vacuum forming unit 130 includes a vacuum pump (not shown) for discharging materials inside the UV forming chamber 11 to the outside of the chamber, a vacuum gauge (not shown) for detecting the degree of internal vacuum, and inflow of materials. And it may include a valve (not shown) for controlling the outflow and a pipe (not shown) connecting each component. The vacuum forming unit 130 preferably maintains a degree of vacuum inside the UV forming chamber 11 at 10 ⁻¹ to 10 ⁻⁴ Torr.

The gas supply unit 120 provides gas. The wavelength of the ultraviolet light formed by the ultraviolet ray generator 100 may be adjusted according to the gas provided by the gas supply unit 120 . For example, the gas supply unit 120 may provide gases such as helium (He), oxygen (O ₂ ), and argon (Ar), and the flow rate of the provided gas is It may be 10 to 1000 sccm.

The electron beam irradiator 110 radiates an electron beam into the ultraviolet forming chamber 11 . In the embodiment illustrated in FIG. 1 , one electron beam irradiator 110 is disposed in the ultraviolet forming chamber 11, but according to an embodiment not shown, a plurality of electron beam irradiators 110 are disposed in the ultraviolet forming chamber 11. It can be.

In an embodiment of the electron beam irradiation unit 110, the electron beam irradiation unit 110 includes an electron gun that forms, accelerates, and provides thermal electrons, and an electron beam steering device that steers the electron beam. An electron gun forms and collimates and provides thermal electrons. As the electron beam emitter 110 provides a collimated electron beam, linear plasma is formed to uniformly emit ultraviolet rays, and ultraviolet rays are emitted in a predictable area. The electron beam may use electrons in the plasma, secondary electrons, or electrons of a hollow cathode, and plasma is formed using a linear beam shape electron beam. The electron beam steering device includes an electromagnetic coil and the like, and can steer an electron beam formed using an electric field and a magnetic field in a desired direction.

The electron beam irradiated by the electron beam irradiator 110 is irradiated to the gas in the ultraviolet forming chamber 11 . Plasma is formed in the process gas by an electron beam having high energy, and light having a wavelength formed according to the type of gas is emitted to the outside. The wavelength band of the light thus formed may be in the infrared region, the visible ray region, and the ultraviolet region, but the energy must be at least equal to or greater than the ultraviolet region in order to neutralize the charges trapped in the semiconductor substrate and/or the pattern formed on the semiconductor substrate.

The ultraviolet band consists of near ultraviolet rays (NEAR UV, 300 nm ~ 380 nm), far ultraviolet rays (FAR UV, 200 nm ~ 300 nm), and vacuum ultraviolet rays (VUV, vacuum UV, 70 nm ~ 200 nm) having a shorter wavelength than the far ultraviolet band. It can be distinguished, and in a preferred embodiment, the ultraviolet ray forming unit can form ultraviolet rays in the vacuum ultraviolet (VUV) band.

The ultraviolet rays formed by the ultraviolet ray shaping unit are provided from the ultraviolet ray forming chamber 11 to the processing chamber 21 through the window 300 . In one embodiment, the ultraviolet ray generator further includes a reflective member 140 . Since the ultraviolet rays formed by the ultraviolet rays generator are radiated radially, the reflective member 140 reflects the emitted ultraviolet rays toward the substrate S and provides the reflected rays.

In one embodiment, the reflective member 140 may be a distributed Bragg's reflector (DBR) in which a plurality of material layers having different refractive indices are alternately stacked. Also, a plurality of reflective members 140 may be disposed in the UV forming chamber 11 .

The ultraviolet rays formed by the ultraviolet ray generator are transmitted through the window 300 and provided to the processing chamber 11 . Ultraviolet rays with high energy have a short wavelength and are highly linear, and energy is lost by being absorbed by an air layer of only a few cm. Therefore, the window 300 is preferably formed of a material having high transmittance of ultraviolet rays of a desired wavelength band. FIG. 2(a) is a diagram showing the transmittance of magnesium fluoride (MgF 2 ), which is one of the materials of the window 300, for each ultraviolet wavelength band. Referring to FIG. 2 (a), it can be seen that magnesium fluoride having a thickness of 5 mm has a transmittance of 70% in a wavelength range of 140 nm, and the transmittance increases from 70% to 90% as the wavelength increases from 140 nm to 200 nm. Able to know.

2(b) is a diagram showing the transmittance of calcium fluoride (CaF ₂ ), which is one of the materials of the window 300, for each ultraviolet wavelength band. Referring to FIG. 2 (b), it can be seen that calcium fluoride having a thickness of 5 mm has a transmittance of approximately 65% in a wavelength range of 140 nm, and the transmittance increases from 65% to 90% as the wavelength increases from 140 nm to 200 nm. can know that

Although not shown, any one of sapphire and lithium fluoride (LiF) may be used as a material for the window 300 . Sapphire and lithium fluoride (LiF) have transmittances in a range similar to those of magnesium fluoride and calcium fluoride illustrated in FIGS. 2(a) and 2(b). Therefore, the window 300 can be formed using these.

3(a) is a diagram illustrating a state in which a pattern is formed on one surface of the window 300. Referring to FIG. Referring to FIG. 3(a) , a surface area may be increased by forming a pattern on one or more surfaces of the window 300 . By increasing the surface area of the window 300, the light receiving area can be increased, and the amount of light transmitted therefrom can be increased. Furthermore, a wave reflected from the surface of the window 300 may be re-incident and transmitted through the rear surface, thereby increasing the amount of transmitted light. The pattern formed on the surface of the window 300 may be formed by an etching profile designed according to the structure and characteristics of the substrate S, and the efficiency of the process may be improved by applying the pattern.

3( b ) is a diagram illustrating a state in which a filter 310 is formed on one side of the window 300 . In the embodiment illustrated in FIG. 3( b ), the filter 310 may be a cut-off filter that blocks light of a band other than a target wavelength band. For example, the filter 310 may be formed on one or more surfaces of the window 300 by a method such as coating.

Referring back to FIG. 1 , the substrate S loaded into the processing chamber 21 is placed on a chuck 210 . The chuck 210 is driven by a chuck driving unit 220 connected to an axis 222 . The chuck 210 fixes and holds the loaded substrate S. For example, a recess and a jaw are formed in the chuck 210, and the substrate S located in the recess may be fixed to the substrate using the jaw. As another example, a suction hole may be formed in the chuck 210 , and a contact surface with the substrate S may be suctioned through the suction hole to fix the substrate. However, since this is only an embodiment, it goes without saying that the substrate S may be fixed to the chuck in other ways.

The chuck 210 is connected to the chuck drive unit 220 through a shaft 222 . The chuck driving unit 220 may raise or lower the shaft 222 to raise or lower the chuck 210 on which the substrate S is disposed to adjust the distance from the ultraviolet ray forming unit. In another embodiment, the substrate S may be fixed to the chuck 210 by using a spacer (not shown) or a carrier plate (not shown).

Also, the chuck driver 220 may rotate the shaft 222 to rotate the chuck 210 on which the substrate S is disposed. By rotating the shaft, the ultraviolet rays formed in the ultraviolet forming chamber 11 may be evenly irradiated onto the substrate S, as will be described later.

In an embodiment not shown, a vacuum forming unit and a gas supply unit may be formed in the processing chamber 21 . When the processing chamber 21 is maintained at atmospheric pressure, ultraviolet light provided through the window 300 may be absorbed by air in the processing chamber 21 and may not be provided to the substrate. Accordingly, the vacuum forming unit 130 located in the processing chamber 21 maintains the degree of vacuum inside the processing chamber 11 to 100 mT or less.

In addition, charged particles such as positive ions, negative ions, and electrons may be needed to neutralize the charges trapped in the substrate S in the processing chamber 21 . Accordingly, a gas supply unit for injecting a desired gas may be formed in the processing chamber 21 . The gas provided by the gas supplier may be ionized by the energy of the ultraviolet light entering the processing chamber 21 to form charged particles.

4 is a diagram illustrating another embodiment of a semiconductor manufacturing apparatus. Referring to FIG. 4 , a plurality of ultraviolet ray forming units 100 may be located in the ultraviolet ray forming chamber 11 . Each ultraviolet forming unit 100 may be separated by a blocking wall 600 . In the illustrated embodiment, the blocking wall 600 and the window 300 do not contact each other, but in an embodiment not shown, the blocking wall 600 and the window 300 contact each other. The blocking wall 600 partitioning each region may include, for example, a dielectric material of any one of alumina ceramic, quartz, and glass, metal, and polymer. . In addition, different gases may be provided to the respective ultraviolet ray generators 100 to form ultraviolet rays of different wavelengths and may be provided to the substrate S.

As the wavelength of the ultraviolet rays formed by the ultraviolet forming unit 100 becomes shorter, the linearity of the ultraviolet rays increases, and thus it may be difficult to uniformly irradiate the entire area of the substrate S. Therefore, in this embodiment, a plurality of ultraviolet forming units 100 may be arranged to perform ultraviolet treatment on the substrate S.

5(a) to 5(d) are plan views of window 300 embodiments. 5(a) illustrates a state in which the window 300 is formed of a single material that is not separated. Window 300 may be supported by frame 310 . 5( b ) illustrates a case in which one window is divided into a central region 300a and a peripheral region 300b, and both the central region 300a and the peripheral region 300b are supported by the frame 310. can

As illustrated in FIG. 1 , since the chuck 210 to which the substrate S is fixed rotates by the chuck driving unit 220, the substrate S rotates around the axis 222 as the chuck 210 rotates. do. Accordingly, as the substrate S rotates, ultraviolet rays provided through the window 300 may be provided to the front surface of the substrate. Referring to FIG. 5(c), the center of one window 300c may be located eccentrically from the center C of rotation of the substrate, and the diameter of the window 300c may be greater than or equal to the radius of the substrate S. can Accordingly, although the diameter of the window 300c is smaller than that of the substrate S, the substrate S is rotated about the center C, so that ultraviolet rays are provided to the entire surface of the substrate.

Referring to FIG. 5(d) , the window may include a plurality of window elements 300d, 300e, and 300f each having a smaller diameter than the radius of the substrate S. The plurality of window elements 300d, 300e, and 300f may be positioned so that the substrate is eccentric from the rotation center C. Therefore, even though the diameter of the window 300 is smaller than the diameter of the substrate S, the substrate S is rotated about the center C as a rotation center, so that ultraviolet rays are provided to the entire surface of the substrate. The window elements 300d, 300e, and 300f may be arranged such that there is no portion of the substrate to which UV rays are not provided when the substrate rotates. In addition, since the amount of charges trapped near the center C of the substrate S is large, the window element 300e may be disposed so that a large amount of ultraviolet light is irradiated to the center portion.

Hereinafter, a preferred embodiment of a semiconductor manufacturing apparatus will be described with reference to the accompanying drawings. Implementations further include a grid plate 400 . Figure 6 (a) is an exploded perspective view showing the outline of the grid plate, Figure 6 (b) is a plan view of the grid plate. 7 is a diagram schematically illustrating a manufacturing process of the first grid electrode 410 . 6 to 7, the grid plate 400 may include only the first grid electrode 410 having a circular structure illustrated in FIG. A three-grid electrode 430 may be further included.

As illustrated in FIG. 6(a), the grid plate 400 is made of a metal material such as aluminum (Al) or copper (Cu) or carbon, etc. positioned on an insulating layer 411 such as polyimide (PI) or epoxy. and a plurality of electrode lines LX made of a conductive material including graphite.

The first grid electrode 410 includes a plurality of electrode lines LX. The electrode line LX may be formed by patterning the metal layer 412 to have different radii, and is formed by forming a plurality of holes H having a predetermined diameter in the patterned metal layer 412 .

The second grid electrode 420 includes a plurality of electrode lines LY made of a conductive material that are spaced a certain distance apart in one direction, and the third grid electrode 430 is formed a certain distance apart in the second direction. It includes electrode lines LZ made of a conductive material.

The electrode lines LX made of conductive material spaced apart from each other, the electrode lines LY made of conductive material, and the electrode lines LZ made of conductive material are spaced apart from each other at a predetermined distance and are stacked and disposed so as not to electrically contact each other. . Here, positions of the first grid electrode 410, the second grid electrode 420, and the third grid electrode 430 may be changed.

In the first grid electrode 410, a plurality of electrode lines LX having different radii and a plurality of insulating layers are alternately disposed so that each electrode line is insulated from each other and a plurality of holes can be formed on each electrode line. there is.

The first grid electrode 410 may be formed on the insulating layer 411 . In addition, the insulating layer 411 may have a thickness of 1 mm to 30 mm, the thickness of the metal layer 412 may be 1 to 10 mm, and the width of the electrode line LX formed on the metal layer 412 may be 10 mm to 50 mm. can be The separation distance between the electrode lines LX may be 10 mm to 50 mm. The electrode line LX in the central part of the metal layer 412 is configured to have a certain area so that more holes H are formed in the central part of the first grid electrode 410, and the diameter of the hole H is It may be set to a size of 0.1 to 5 mm.

A metal plate made of copper (Cu) or aluminum (Al) may be provided at the center of the insulating layer 411 . This can increase adhesion and make the grid electrode more robust when plating the wall of the hole H.

In addition, the distance between the first grid electrode 410 and the adjacent second grid electrode 420 is such that ions or electrons emitted through the holes H of the first grid electrode 410 are diffused in a certain range, and the second grid electrode 420 is It is preferable to have a separation distance greater than or equal to a predetermined distance so that the grid electrode 420 can flow into the grid electrode 420 .

Each electrode line LX of the first grid electrode 410, each electrode line LY of the second grid electrode 420, and each electrode line LZ of the third grid electrode 430 are connected to the grid control device 500. ), respectively. That is, the grid control device 500 independently supplies power to each of the electrode lines LX, LY, and LZ.

In addition, the first to third grid electrodes 410, 420, and 430 are fixed to the inside of the processing chamber 21 by a supporting means (not shown) provided therein and arranged to form a certain distance, or to the third grid electrodes 410, 420, 430 by additionally providing a spacer (not shown) having a height corresponding to the separation distance in a predetermined unit including the edge portion or the edge portion to form the separation distance, thereby electrically They are stacked in an insulated manner.

In the first grid electrode 410, a plurality of circular electrode lines LX having a predetermined area in the form of ellipses or concentric circles having different diameters are arranged at a predetermined distance apart from each other in an outward direction based on the same central point. From this, the first grid electrode 410 may be formed to correspond to the static electricity pattern formed on the semiconductor substrate 1 .

The electrode lines LY and LZ of the second and third grid electrodes 420 and 330 are arranged to form an arbitrary crossing angle in the range of 10° to 90°. When viewed from above, each electrode line of the second grid electrode 410 and the third grid electrode 420 cross each other, as illustrated in FIG. 6( b ), so that it has a mesh shape. Preferably, the electrode lines of the second and third grid electrodes 420 and 430 may be formed in an X-axis direction and a Y-axis direction to form a grid pattern.

Meanwhile, FIG. 8 is a view illustrating a shape in which the first to third grid electrodes 410, 420, and 430 are stacked and disposed when viewed from the top. Referring to FIG. 8 , as the hole H formed in the electrode line LX of the first grid electrode 410 and the electrode lines LY and LZ of the second and third grid electrodes 420 and 430 intersect, Ions or electrons located on the upper side of the grid plate 500 are emitted downward through holes H formed in the electrode line LX.

That is, as shown in FIG. 8 , as a result of measuring the electrostatic characteristics of the semiconductor substrate 1 after the semiconductor process is completed, a first electrostatic region T1 of positive voltage and a second electrostatic region T2 of negative voltage exist. In this case, a negative voltage, which is a reverse voltage of the first electrostatic region T1, is supplied to the electrode lines LX4, LX5, LY7, LY8, LY9, LZ1, LZ2, and LZ3 corresponding to the first electrostatic region T1; A positive voltage, which is a reverse voltage of the second electrostatic region T2, is supplied to the electrode lines LX1, LX2, LY2, LY3, LY4, LZ5, LZ6, and LZ7 corresponding to the second electrostatic region T3.

For example, a reverse voltage of "-20V" is supplied to the electrode line of the first electrostatic region T1, which is "+20V", and a reverse voltage of "+" is supplied to the electrode line of the second electrostatic region T2, which is "-50V". By supplying a reverse voltage of 50V, ions or electrons of different intensities are emitted to the electrostatic areas of different voltages at different locations formed on the semiconductor substrate 1, thereby generating static electricity of different characteristics formed in different areas at the same time. Remove.

In addition, in FIG. 8 , a voltage having an opposite polarity to the corresponding electrostatic voltage and having a level different from that of the electrostatic voltage by less than a certain level is supplied to the electrode lines corresponding to the first electrostatic region T1 and the second electrostatic region T2. can This may be appropriately set considering the distance between the grid plate 500 and the semiconductor substrate 1 and the fact that the intensity of ions or electrons is reduced in the semiconductor substrate 1 .

Hereinafter, an operation of the semiconductor manufacturing apparatus according to the above-described preferred embodiment will be described with reference to FIG. 9 . The vacuum forming unit 130 is driven so that the inside of the UV forming chamber 11 has a desired degree of vacuum. As described above, the UV forming chamber 11 is maintained at, for example, 10 ^-1 to 10 ^-4 Torr. The gas supply unit 120 injects gas so that the target ultraviolet ray forming unit forms the wavelength of ultraviolet ray.

As described above, the processing chamber 21 may also include a vacuum forming unit and a gas injection unit, and the vacuum forming unit included in the processing chamber 21 also forms the processing chamber to have a desired degree of vacuum. Gas is injected so that charged particles are generated from the ultraviolet light entering into (21).

Table 1 below is a table illustrating the gas injected when forming ultraviolet rays and the wavelengths of ultraviolet rays generated accordingly.

Helium (He)	Oxygen (O 2 )	Argon (Ar)
58.4 nm	130.5 nm	104.8 nm

A desired gas is supplied to the ultraviolet ray forming unit 100, and the ultraviolet ray forming unit radiates an electron beam. As described above, the electron gun included in the electron beam emitter 110 may uniform the ultraviolet rays formed by irradiating the collimated electron beam. As the electron beam irradiator 110 irradiates the electron ratio, electrons in the gas are excited, and electrons in an excited state descend to a ground state to form ultraviolet rays having a corresponding wavelength.

The formed ultraviolet rays directly pass through the window 300 or are reflected by the reflective member 140 and provided to the substrate S through the window 300 . As described above, the substrate S is moved by controlling the distance and rotational speed of the substrate S from the window 400 by the chuck driving unit 220 .

When ultraviolet rays are applied to the surface of the substrate S, charges trapped in fine patterns formed on the surface of the substrate S and inside a multi-layered film on the substrate S are neutralized. As an example, it is assumed that a silicon oxide film is formed on the substrate S and electrons are trapped in the silicon oxide film.

The silicon oxide film generally has a band gap energy of 8.4 eV to 11 eV, and in order to neutralize electrons trapped in the silicon oxide film as holes, ultraviolet rays having energy corresponding to at least the band gap must be irradiated so that the holes are in the forbidden band ( It crosses the forbidden band and enters the conduction band to neutralize electrons.

In addition, as ultraviolet rays are irradiated into the processing chamber 21 , gas in the processing chamber 21 is ionized by the ultraviolet rays to form charged particles. The grid plate 400 receives power from the grid plate controller 500, and accelerates and provides charged particles formed in this way to the substrate S to neutralize static electricity formed on the substrate S.

The grid plate control unit 500 can receive information on the region where a lot of static electricity is located on the substrate S, and can neutralize the static electricity formed on the substrate S with high efficiency by providing charged particles corresponding to the information.

Although it has been described with reference to the embodiments shown in the drawings to aid understanding of the present invention, this is an embodiment for implementation and is only exemplary, and those having ordinary knowledge in the field can make various modifications and equivalents therefrom. It will be appreciated that other embodiments are possible. Therefore, the true technical scope of protection of the present invention will be defined by the appended claims.

Claims (13)

1. A semiconductor manufacturing device, the device comprising:

   an ultraviolet ray forming unit located in the ultraviolet ray forming chamber and irradiating an electron beam (e-beam) to form ultraviolet ray of a desired wavelength;

   a substrate driving unit including a chuck for supporting the loaded substrate positioned in the processing chamber where the loaded substrate is treated with the ultraviolet rays, and an axis for rotating the chuck; and

   and a window positioned between the ultraviolet generation chamber and the processing chamber to transmit the formed ultraviolet rays into the processing chamber.
2. According to claim 1,

   The ultraviolet rays forming unit,

   The semiconductor manufacturing apparatus further includes one or more reflective members that reflect the formed ultraviolet rays to the processing chamber.
3. According to claim 1,

   The ultraviolet rays forming unit,

   an electron beam irradiator for irradiating the electron beam;

   gas supply and

   A vacuum forming unit configured to form a desired vacuum degree inside the ultraviolet ray forming chamber;

   The semiconductor manufacturing apparatus of claim 1, wherein the electron beam collides with a provided gas to form ultraviolet rays of the target wavelength.
4. According to claim 3,

   The gas supply unit,

   A semiconductor manufacturing apparatus providing at least one of helium (He), oxygen (O2), and argon (Ar) gases.
5. According to claim 3,

   The electron beam irradiator,

   electron gun and

   A semiconductor manufacturing apparatus comprising an electron beam steering device for steering an electron beam.
6. According to claim 3,

   The UV forming chamber,

   A semiconductor manufacturing apparatus including a plurality of regions in which a plurality of the ultraviolet forming parts are respectively disposed.
7. According to claim 3,

   The electron beam irradiator,

   A focused linear electron beam (e-beam) is irradiated,

   A semiconductor manufacturing apparatus wherein a linear plasma is formed in the ultraviolet forming chamber by the focused linear electron beam to form ultraviolet rays.
8. According to claim 1,

   the window,

   A pattern is formed on at least one side of the window,

   A semiconductor manufacturing apparatus in which a filter is formed on at least one surface of the window.
9. According to claim 1,

   the window

   At least a portion of a semiconductor manufacturing device formed of a material containing any one of sapphire, magnesium fluoride (MgF ₂ ), lithium fluoride (LiF ₂ ) and calcium fluoride (CaF ₂ ).
10. A semiconductor manufacturing device, the device comprising:

    an ultraviolet ray forming unit located in the ultraviolet ray forming chamber and irradiating an electron beam (e-beam) to form ultraviolet ray of a desired wavelength;

    a substrate driving unit including a chuck for supporting the loaded substrate located in a processing chamber where the loaded substrate is treated with the ultraviolet rays, and an axis for rotating the chuck;

    a window positioned between the ultraviolet generation chamber and the processing chamber to transmit the formed ultraviolet rays into the processing chamber; and

    A grid plate for accelerating and providing charged particles to the substrate;

    The grid plate includes a plurality of electrode lines having different radii, and a semiconductor manufacturing apparatus including a grid electrode in which a plurality of holes are formed in each electrode line.
11. According to claim 10,

    The grid plate,

    A grid electrode extending in the first direction and

    The semiconductor manufacturing apparatus further includes a grid electrode extending in a second direction that is different from the first direction.
12. According to any one of claims 10 and 11,

    The semiconductor manufacturing device

    and a grid plate controller supplying a voltage corresponding to the electrostatic voltage formed on the substrate to the grid plate.
13. According to claim 10,

    The UV forming unit

    irradiating the focused electron beam;

    A semiconductor manufacturing apparatus wherein a linear plasma is formed in the ultraviolet forming chamber by the focused linear electron beam to form ultraviolet rays.

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