WO2023272421A1

WO2023272421A1 - Battery film testing with imaging systems

Info

Publication number: WO2023272421A1
Application number: PCT/CN2021/102656
Authority: WO
Inventors: Peiyan CAO
Original assignee: Shenzhen Xpectvision Technology Co., Ltd.
Priority date: 2021-06-28
Filing date: 2021-06-28
Publication date: 2023-01-05
Also published as: TW202300905A

Abstract

Disclosed herein is a method comprising: capturing M images of a battery film, wherein said capturing the M images of the battery film comprises moving the battery film between a radiation source and an image sensor in a scanning direction with respect to the image sensor as the image sensor captures the M images, and wherein M is an integer greater than 1; and identifying a defect of the battery film based on at least 2 images of the M images.

Description

BATTERY FILM TESTING WITH IMAGING SYSTEMS

Background

A radiation detector is a device that measures a property of a radiation. Examples of the property may include a spatial distribution of the intensity, phase, and polarization of the radiation. The radiation measured by the radiation detector may be a radiation that has transmitted through an object. The radiation measured by the radiation detector may be an electromagnetic radiation such as infrared light, visible light, ultraviolet light, X-ray, or γ-ray. The radiation may be of other types such as α-rays and β-rays. An imaging system may include one or more image sensors each of which may have one or more radiation detectors.

Summary

Disclosed herein is a method, comprising: capturing M images of a battery film, wherein said capturing the M images of the battery film comprises moving the battery film between a radiation source and an image sensor in a scanning direction with respect to the image sensor as the image sensor captures the M images, and wherein M is an integer greater than 1; and identifying a defect of the battery film based on at least 2 images of the M images.

In an aspect, the battery film comprises an anode layer, a cathode layer, and an electrolyte layer which is sandwiched between and in direct physical contact with the anode layer and the cathode layer.

In an aspect, the battery film further comprises a separation layer such that a layer of the anode layer and the cathode layer is sandwiched between and in direct physical contact with the electrolyte layer and the separation layer.

In an aspect, the separation layer comprises an insulator.

In an aspect, the method further comprises removing a portion of the battery film that contains the defect.

In an aspect, the image sensor captures the M images one by one.

In an aspect, the image sensor captures the M images by using X-rays from the radiation source that have transmitted through the battery film.

In an aspect, the image sensor comprises (A) first active areas in a first row and (B) second active areas in a second row, wherein first gaps among the first active areas and second gaps among the second active areas are parallel to the scanning direction, and wherein no gap of the first gaps is collinear with any gap of the second gaps.

In an aspect, each point of the battery film is in at least 2 images of the M images.

In an aspect, the at least 2 images which said each point is in are temporally consecutive.

In an aspect, said identifying the defect of the battery film comprises: determining a first location of potential defect in a first image of the M images; determining a second location of potential defect in a second image of the M images; and confirming the defect based on the first location and the second location.

In an aspect, said confirming the defect is further based on a speed of movement of the battery film relative to the image sensor.

In an aspect, said determining the first location of potential defect in the first image comprises comparing a value of each picture element of the first image with an average value of all picture elements of the first image, and wherein said determining the second location of potential defect in the second image comprises comparing a value of each picture element of the second image with an average value of all picture elements of the second image.

In an aspect, said confirming the defect comprises determining that (A) a displacement between the first and second locations is along the scanning direction and (B) the displacement between the first and second locations is equal to the speed of movement of the battery film relative to the image sensor times the time between captures of the first and second images.

Disclosed herein is a system, comprising: a radiation source; an image sensor; and a battery film, wherein the image sensor is configured to capture M images of the battery film, wherein the battery film is configured to move between the radiation source and the image sensor in a scanning direction with respect to the image sensor as the image sensor captures the M images, wherein M is an integer greater than 1, and wherein the system is configured to identify a defect of the battery film based on at least 2 images of the M images.

In an aspect, the separation layer comprises an insulator.

In an aspect, the image sensor captures the M images one by one.

In an aspect, the system identifies the defect of the battery film by: determining a first location of potential defect in a first image of the M images; determining a second location of potential defect in a second image of the M images; and confirming the defect based on the first location and the second location.

Brief Description of Figures

Fig. 1 schematically shows a radiation detector, according to an embodiment.

Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector, according to an embodiment.

Fig. 3 schematically shows a detailed cross-sectional view of the radiation detector, according to an embodiment.

Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector, according to an alternative embodiment.

Fig. 5 schematically shows a top view of a package including the radiation detector and a printed circuit board (PCB) , according to an embodiment.

Fig. 6 schematically shows a cross-sectional view of an image sensor including the packages of Fig. 5 mounted to a system PCB (printed circuit board) , according to an embodiment.

Fig. 7 schematically shows a perspective view of an imaging system in operation, according to an embodiment.

Fig. 8 shows a flowchart generalizing the operation of the imaging system.

Fig. 9 shows a stack of layers which can be tested with the imaging system, according to an embodiment.

Detailed Description

RADIATION DETECTOR

Fig. 1 schematically shows a radiation detector 100, as an example. The radiation detector 100 may include an array of pixels 150 (also referred to as sensing elements 150) . The array may be a rectangular array (as shown in Fig. 1) , a honeycomb array, a hexagonal array, or any other suitable array. The array of pixels 150 in the example of Fig. 1 has 4 rows and 7 columns; however, in general, the array of pixels 150 may have any number of rows and any number of columns.

Each pixel 150 may be configured to detect radiation from a radiation source (not shown) incident thereon and may be configured to measure a characteristic (e.g., the energy of the particles, the wavelength, and the frequency) of the radiation. A radiation may include particles such as photons and subatomic particles. Each pixel 150 may be configured to count numbers of particles of radiation incident thereon whose energy falls in a plurality of bins of energy, within a period of time. All the pixels 150 may be configured to count the numbers of particles of radiation incident thereon within a plurality of bins of energy within the same period of time. When the incident particles of radiation have similar energy, the pixels 150 may be simply configured to count numbers of particles of radiation incident thereon within a period of time, without measuring the energy of the individual particles of radiation.

Each pixel 150 may have its own analog-to-digital converter (ADC) configured to digitize an analog signal representing the energy of an incident particle of radiation into a digital signal, or to digitize an analog signal representing the total energy of a plurality of incident particles of radiation into a digital signal. The pixels 150 may be configured to operate in parallel. For example, when one pixel 150 measures an incident particle of radiation, another pixel 150 may be waiting for a particle of radiation to arrive. The pixels 150 may not have to be individually addressable.

The radiation detector 100 described here may have applications such as in an X-ray telescope, X-ray mammography, industrial X-ray defect detection, X-ray microscopy or microradiography, X-ray casting inspection, X-ray non-destructive testing, X-ray weld inspection, X-ray digital subtraction angiography, etc. It may be suitable to use this radiation detector 100 in place of a photographic plate, a photographic film, a PSP plate, an X-ray image intensifier, a scintillator, or another semiconductor X-ray detector.

Fig. 2 schematically shows a simplified cross-sectional view of the radiation detector 100 of Fig. 1 along a line 2-2, according to an embodiment. Specifically, the radiation detector 100 may include a radiation absorption layer 110 and an electronics layer 120 (which may include one or more ASICs or application-specific integrated circuits) for processing or analyzing electrical signals which incident radiation generates in the radiation absorption layer 110. The radiation detector 100 may or may not include a scintillator (not shown) . The radiation absorption layer 110 may include a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof. The semiconductor material may have a high mass attenuation coefficient for the radiation of interest.

Fig. 3 schematically shows a detailed cross-sectional view of the radiation detector 100 of Fig. 1 along the line 2-2, as an example. Specifically, the radiation absorption layer 110 may include one or more diodes (e.g., p-i-n or p-n) formed by a first doped region 111, one or more discrete regions 114 of a second doped region 113. The second doped region 113 may be separated from the first doped region 111 by an optional intrinsic region 112. The discrete regions 114 may be separated from one another by the first doped region 111 or the intrinsic region 112. The first doped region 111 and the second doped region 113 may have opposite types of doping (e.g., region 111 is p-type and region 113 is n-type, or region 111 is n-type and region 113 is p-type) . In the example of Fig. 3, each of the discrete regions 114 of the second doped region 113 forms a diode with the first doped region 111 and the optional intrinsic region 112. Namely, in the example in Fig. 3, the radiation absorption layer 110 has a plurality of diodes (more specifically, 7 diodes corresponding to 7 pixels 150 of one row in the array of Fig. 1, of which only 2 pixels 150 are labeled in Fig. 3 for simplicity) . The plurality of diodes may have an electrical contact 119A as a shared (common) electrode. The first doped region 111 may also have discrete portions.

The electronics layer 120 may include an electronic system 121 suitable for processing or interpreting signals generated by the radiation incident on the radiation absorption layer 110. The electronic system 121 may include an analog circuitry such as a filter network, amplifiers, integrators, and comparators, or a digital circuitry such as a microprocessor, and memory. The electronic system 121 may include one or more ADCs (analog to digital converters) . The electronic system 121 may include components shared by the pixels 150 or components dedicated to a single pixel 150. For example, the electronic system 121 may include an amplifier dedicated to each pixel 150 and a microprocessor shared among all the pixels 150. The electronic system 121 may be electrically connected to the pixels 150 by vias 131. Space among the vias may be filled with a filler material 130, which may increase the mechanical stability of the connection of the electronics layer 120 to the radiation absorption layer 110. Other bonding techniques are possible to connect the electronic system 121 to the pixels 150 without using the vias 131.

When radiation from the radiation source (not shown) hits the radiation absorption layer 110 including diodes, particles of the radiation may be absorbed and generate one or more charge carriers (e.g., electrons, holes) by a number of mechanisms. The charge carriers may drift to the electrodes of one of the diodes under an electric field. The electric field may be an external electric field. The electrical contact 119B may include discrete portions each of which is in electrical contact with the discrete regions 114. The term “electrical contact” may be used interchangeably with the word “electrode. ” In an embodiment, the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete regions 114 ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete regions 114 than the rest of the charge carriers) . Charge carriers generated by a particle of the radiation incident around the footprint of one of these discrete regions 114 are not substantially shared with another of these discrete regions 114. A pixel 150 associated with a discrete region 114 may be an area around the discrete region 114 in which substantially all (more than 98%, more than 99.5%, more than 99.9%, or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete region 114. Namely, less than 2%, less than 1%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel 150.

Fig. 4 schematically shows a detailed cross-sectional view of the radiation detector 100 of Fig. 1 along the line 2-2, according to an alternative embodiment. More specifically, the radiation absorption layer 110 may include a resistor of a semiconductor material such as silicon, germanium, GaAs, CdTe, CdZnTe, or a combination thereof, but does not include a diode. The semiconductor material may have a high mass attenuation coefficient for the radiation of interest. In an embodiment, the electronics layer 120 of Fig. 4 is similar to the electronics layer 120 of Fig. 3 in terms of structure and function.

When the radiation hits the radiation absorption layer 110 including the resistor but not diodes, it may be absorbed and generate one or more charge carriers by a number of mechanisms. A particle of the radiation may generate 10 to 100,000 charge carriers. The charge carriers may drift to the

electrical contacts

119A and 119B under an electric field. The electric field may be an external electric field. The electrical contact 119B may include discrete portions. In an embodiment, the charge carriers may drift in directions such that the charge carriers generated by a single particle of the radiation are not substantially shared by two different discrete portions of the electrical contact 119B ( “not substantially shared” here means less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow to a different one of the discrete portions than the rest of the charge carriers) . Charge carriers generated by a particle of the radiation incident around the footprint of one of these discrete portions of the electrical contact 119B are not substantially shared with another of these discrete portions of the electrical contact 119B. A pixel 150 associated with a discrete portion of the electrical contact 119B may be an area around the discrete portion in which substantially all (more than 98%, more than 99.5%, more than 99.9%or more than 99.99%of) charge carriers generated by a particle of the radiation incident therein flow to the discrete portion of the electrical contact 119B. Namely, less than 2%, less than 0.5%, less than 0.1%, or less than 0.01%of these charge carriers flow beyond the pixel associated with the one discrete portion of the electrical contact 119B.

RADIATION DETECTOR PACKAGE

Fig. 5 schematically shows a top view of a package 500 including the radiation detector 100 and a printed circuit board (PCB) 510. The term “PCB” as used herein is not limited to a particular material. For example, a PCB may include a semiconductor. The radiation detector 100 may be mounted to the PCB 510. The wiring between the radiation detector 100 and the PCB 510 is not shown for the sake of clarity. The PCB 510 may have one or more radiation detectors 100. The PCB 510 may have an area 512 not covered by the radiation detector 100 (e.g., for accommodating bonding wires 514) . The radiation detector 100 may have an active area 190 which is where the pixels 150 (Fig. 1) are located. The radiation detector 100 may have a perimeter zone 195 near the edges of the radiation detector 100. The perimeter zone 195 has no pixels 150, and the radiation detector 100 does not detect particles of radiation incident on the perimeter zone 195.

IMAGE SENSOR

Fig. 6 schematically shows a cross-sectional view of an image sensor 600, according to an embodiment. The image sensor 600 may include one or more packages 500 of Fig. 5 mounted to a system PCB 650. Fig. 6 shows 2 packages 500 as an example. The electrical connection between the PCBs 510 and the system PCB 650 may be made by bonding wires 514. In order to accommodate the bonding wires 514 on the PCB 510, the PCB 510 may have the area 512 not covered by the radiation detector 100. In order to accommodate the bonding wires 514 on the system PCB 650, the packages 500 may have gaps in between. The gaps may be approximately 1 mm or more. Particles of radiation incident on the perimeter zones 195, on the area 512, or on the gaps cannot be detected by the packages 500 on the system PCB 650. A dead zone of a radiation detector (e.g., the radiation detector 100) is the area of the radiation-receiving surface of the radiation detector, on which incident particles of radiation cannot be detected by the radiation detector. A dead zone of a package (e.g., package 500) is the area of the radiation-receiving surface of the package, on which incident particles of radiation cannot be detected by the radiation detector or detectors in the package. In this example shown in Fig. 5 and Fig. 6, the dead zone of the package 500 includes the perimeter zones 195 and the area 512. A dead zone (e.g., 688) of an image sensor (e.g., image sensor 600) with a group of packages (e.g., packages 500 mounted on the same PCB and arranged in the same layer or in different layers) includes the combination of the dead zones of the packages in the group and the gaps between the packages.

In an embodiment, the radiation detector 100 (Fig. 1) operating by itself may be considered an image sensor. In an embodiment, the package 500 (Fig. 5) operating by itself may be considered an image sensor.

The image sensor 600 including the radiation detectors 100 may have the dead zone 688 among the active areas 190 of the radiation detectors 100. However, the image sensor 600 may capture multiple partial images of an object or scene (not shown) , and then these captured partial images may be stitched to form an image of the entire object or scene.

The term “image” in the present patent application is not limited to spatial distribution of a property of a radiation (such as intensity) . For example, the term “image” may also include the spatial distribution of density of a substance or element.

INITIAL SYSTEM ARRANGEMENT

Fig. 7 schematically shows a perspective view of an imaging system 700, according to an embodiment. Specifically, the imaging system 700 may include a radiation source 710 and the image sensor 600. A battery film 720 may be positioned between the radiation source 710 and the image sensor 600.

In an embodiment, the radiation source 710 may generate a radiation beam 712 (e.g., a beam of X-rays) toward the battery film 720 and the image sensor 600.

In an embodiment, the image sensor 600 may include one or more radiation detectors 100 arranged in a manner such that the image sensor 600 is able to scan (i.e., to capture images of) the entire width of the battery film 720 as the battery film 720 moves in a scanning direction 730 with respect to the image sensor 600.

For example, the image sensor 600 may include 9 radiation detectors 100 arranged in 2 rows. One row may have 5 radiation detectors 100, and the other row may have 4 radiation detectors 100. For simplicity, only the active areas 190 of the 9 radiation detectors 100 and the dead zone 688 of the image sensor 600 are shown.

In an embodiment, the active areas 190 of the image sensor 600 may be arranged such that the active areas 190 can scan the entire width of the battery film 720 as the battery film 720 moves in the scanning direction 730.

In an embodiment, the battery film 720 may be a layer (e.g., an anode layer or a cathode layer) or a stack of layers which can be later used to create a battery (not shown) .

SCANNING PROCESS

In an embodiment, the battery film 720 may be moved between the radiation source 710 and the image sensor 600 in the scanning direction 730 as the image sensor 600 captures multiple images of the battery film 720. In an embodiment, the image sensor 600 captures the multiple images one by one (i.e., one image at a time) .

In an embodiment, the image sensor 600 captures the multiple images of the battery film 720 by using radiation of the radiation beam 712 of the radiation source 710 that has transmitted through the battery film 720.

In an embodiment, the speed of movement of the battery film 720 with respect to the image sensor 600 as the image sensor 600 scans the battery film 720 may be constant (i.e., unchanged) .

DEFECT IDENTIFICATION

In an embodiment, a defect of the battery film 720 may be identified based on at least 2 images of the multiple images of the battery film 720 captured by the image sensor 600. In an embodiment, the identification of the defect may be performed by the image sensor 600. The defect may be a puncture in the battery film 720. If the battery film 720 is a stack of layers, then the puncture may cause a short circuit between the layers of the stack. The defect may be an area with a thickness below a threshold.

FLOWCHART FOR GENERALIZATION

Fig. 8 shows a flowchart 800 generalizing the operation of the imaging system 700 (Fig. 7) described above. In step 810, M images of a battery film are captured. For example, in the embodiments described above, the multiple images of the battery film 720 are captured by the image sensor 600.

In addition, also in step 810, the battery film is moved between a radiation source and an image sensor in a scanning direction with respect to the image sensor as the image sensor captures the M images. For example, in the embodiments described above, the battery film 720 is moved between the radiation source 710 and the image sensor 600 in the scanning direction 730 as the image sensor 600 captures the multiple images of the battery film 720.

In addition, also in step 810, M is an integer greater than 1. For example, in the embodiments described above, the multiple images of the battery film 720 are captured by the image sensor 600 (i.e., more than 1) .

In step 820, a defect of the battery film is identified based on at least 2 images of the M images. For example, in the embodiments described above, the defect of the battery film 720 is identified based on at least 2 images of the multiple images of the battery film 720 captured by the image sensor 600.

OTHER EMBODIMENTS

BATTERY FILM IS A STACK OF LAYERS

In an embodiment, the battery film 720 (Fig. 7) may be a stack of layers. For example, the battery film 720 may include a stack 900 (Fig. 9) of multiple layers.

Specifically, with reference to Fig. 9, the stack 900 may include an anode layer 722, a cathode layer 726, and an electrolyte layer 724 which is sandwiched between and in direct physical contact with the anode layer 722 and the cathode layer 726. In an embodiment, the anode layer 722, the cathode layer 726, and the electrolyte layer 724 may form a battery.

In an embodiment, the stack 900 may further include a separation layer 728 such that the cathode layer 726 is sandwiched between and in direct physical contact with the electrolyte layer 724 and the separation layer 728. In an embodiment, the separation layer 728 may include an insulator. As a result, after being tested for defects, if no defect is found, the stack 900 (with 4 layers) may be rolled into a cylindrical battery cell (not shown) .

PORTION REMOVAL IF A DEFECT IS IDENTIFIED

In an embodiment, if a defect of the battery film 720 is identified, then the portion of the battery film 720 that contains the defect may be removed.

MORE ABOUT THE IMAGE SENSOR

In an embodiment, with reference to Fig. 7, the active areas 190 of the image sensor 600 may be arranged such that the 4 gaps 192a among the 5 active areas 190 of the first row and the 3 gaps 192b among the 4 active areas 190 of the second row may be parallel to the scanning direction 730.

In addition, in an embodiment, the active areas 190 of the 2 rows may be arranged in a staggered manner in which the 4 gaps 192a among the 5 active areas 190 of the first row and the 3 gaps 192b among the 4 active areas 190 of the second row are not aligned (i.e., no gap of the gaps 192a is collinear with any gap of the gaps 192b) . As a result, the active areas 190 of the image sensor 600 may be able to scan the entire battery film 720 as the battery film 720 moves in the scanning direction 730.

MORE ABOUT SCANNING PROCESS

In an embodiment, the scanning process may be such that each point of the battery film 720 (Fig. 7) is in at least 2 images of the multiple images of the battery film 720 captured by the image sensor 600. In an embodiment, the at least 2 images mentioned above are temporally consecutive (i.e., captured consecutively in time) .

DETAILS OF DEFECT IDENTIFICATION

In an embodiment, with reference to Fig. 7, the defect identification process may start with determining the locations of all potential defects in all the images of the battery film 720 captured by the image sensor 600.

In an embodiment, the determination of the location of a potential defect in an image of the battery film 720 captured by the image sensor 600 may include comparing the value of each picture element of the image with an average value of all picture elements of the image. Because the battery film 720 is supposed to be homogeneous, any substantial deviation from the average value indicates a potential defect.

Next, in an embodiment, for each pair of temporally consecutive images of the battery film 720 captured by the image sensor 600 (called the first image and the second image) , each pair of locations of potential defects (one is from the first image (called the first location) , and the other is from the second image (called the second location) ) may be analyzed. If the first location and the second location correspond to the same point of the battery film 720, then that same point of the battery film 720 may be confirmed as a defect.

In an embodiment, the first location and the second location mentioned above may be considered corresponding to the same point of the battery film 720 if (A) the displacement between the first and second locations is along the scanning direction 730, and (B) the displacement between the first and second locations is equal to the speed of movement of the battery film 720 with respect to the image sensor 600 times the time between the captures of the first and second images.

ALTERNATIVE EMBODIMENTS

In the embodiments described above, the battery film 720 (Fig. 7) is a stack of layers (the stack 900) . In an alternative embodiment, the battery film 720 may be a single layer. For example, the battery film 720 may be the anode layer 722 (Fig. 9) .

In the embodiments described above, with reference to Fig. 9, from top to bottom are the anode layer 722, the electrolyte layer 724, the cathode layer 726, and the separation layer 728. In an alternative embodiment, the anode layer 722 and the cathode layer 726 may switch their respective positions in the stack 900. In other words, in Fig. 9, from top to bottom would be the cathode layer 726, the electrolyte layer 724, the anode layer 722, and the separation layer 728.

While various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and are not intended to be limiting, with the true scope and spirit being indicated by the following claims.

Claims

A method, comprising:

capturing M images of a battery film,

wherein said capturing the M images of the battery film comprises moving the battery film between a radiation source and an image sensor in a scanning direction with respect to the image sensor as the image sensor captures the M images, and

wherein M is an integer greater than 1; and

identifying a defect of the battery film based on at least 2 images of the M images.
The method of claim 1, wherein the battery film comprises an anode layer, a cathode layer, and an electrolyte layer which is sandwiched between and in direct physical contact with the anode layer and the cathode layer.
The method of claim 2, wherein the battery film further comprises a separation layer such that a layer of the anode layer and the cathode layer is sandwiched between and in direct physical contact with the electrolyte layer and the separation layer.
The method of claim 3, wherein the separation layer comprises an insulator.
The method of claim 1, further comprising removing a portion of the battery film that contains the defect.
The method of claim 1, wherein the image sensor captures the M images one by one.
The method of claim 1, wherein the image sensor captures the M images by using X-rays from the radiation source that have transmitted through the battery film.
The method of claim 1,

wherein the image sensor comprises (A) first active areas in a first row and (B) second active areas in a second row,

wherein first gaps among the first active areas and second gaps among the second active areas are parallel to the scanning direction, and

wherein no gap of the first gaps is collinear with any gap of the second gaps.
The method of claim 1, wherein each point of the battery film is in at least 2 images of the M images.
The method of claim 9, wherein the at least 2 images which said each point is in are temporally consecutive.
The method of claim 1, wherein said identifying the defect of the battery film comprises:

determining a first location of potential defect in a first image of the M images;

determining a second location of potential defect in a second image of the M images; and

confirming the defect based on the first location and the second location.
The method of claim 11, wherein said confirming the defect is further based on a speed of movement of the battery film relative to the image sensor.
The method of claim 12,

wherein said determining the first location of potential defect in the first image comprises comparing a value of each picture element of the first image with an average value of all picture elements of the first image, and

wherein said determining the second location of potential defect in the second image comprises comparing a value of each picture element of the second image with an average value of all picture elements of the second image.
The method of claim 13, wherein said confirming the defect comprises determining that (A) a displacement between the first and second locations is along the scanning direction and (B) the displacement between the first and second locations is equal to the speed of movement of the battery film relative to the image sensor times the time between captures of the first and second images.
A system, comprising:

a radiation source;

an image sensor; and

a battery film,

wherein the image sensor is configured to capture M images of the battery film,

wherein the battery film is configured to move between the radiation source and the image sensor in a scanning direction with respect to the image sensor as the image sensor captures the M images,

wherein M is an integer greater than 1, and

wherein the system is configured to identify a defect of the battery film based on at least 2 images of the M images.
The system of claim 15, wherein the battery film comprises an anode layer, a cathode layer, and an electrolyte layer which is sandwiched between and in direct physical contact with the anode layer and the cathode layer.
The system of claim 16, wherein the battery film further comprises a separation layer such that a layer of the anode layer and the cathode layer is sandwiched between and in direct physical contact with the electrolyte layer and the separation layer.
The system of claim 17, wherein the separation layer comprises an insulator.
The system of claim 15, wherein the image sensor captures the M images one by one.
The system of claim 15, wherein the image sensor captures the M images by using X-rays from the radiation source that have transmitted through the battery film.
The system of claim 15,

wherein the image sensor comprises (A) first active areas in a first row and (B) second active areas in a second row,

wherein first gaps among the first active areas and second gaps among the second active areas are parallel to the scanning direction, and

wherein no gap of the first gaps is collinear with any gap of the second gaps.
The system of claim 15, wherein each point of the battery film is in at least 2 images of the M images.
The system of claim 22, wherein the at least 2 images which said each point is in are temporally consecutive.
The system of claim 15, wherein the system identifies the defect of the battery film by:

determining a first location of potential defect in a first image of the M images;

determining a second location of potential defect in a second image of the M images; and

confirming the defect based on the first location and the second location.
The system of claim 24, wherein said confirming the defect is further based on a speed of movement of the battery film relative to the image sensor.
The system of claim 25,

wherein said determining the first location of potential defect in the first image comprises comparing a value of each picture element of the first image with an average value of all picture elements of the first image, and

wherein said determining the second location of potential defect in the second image comprises comparing a value of each picture element of the second image with an average value of all picture elements of the second image.
The system of claim 26, wherein said confirming the defect comprises determining that (A) a displacement between the first and second locations is along the scanning direction and (B) the displacement between the first and second locations is equal to the speed of movement of the battery film relative to the image sensor times the time between captures of the first and second images.