WO2023241931A1 - Procédé de production d'ensembles électroniques et ensemble électronique au niveau d'une tranche - Google Patents

Procédé de production d'ensembles électroniques et ensemble électronique au niveau d'une tranche Download PDF

Info

Publication number
WO2023241931A1
WO2023241931A1 PCT/EP2023/064677 EP2023064677W WO2023241931A1 WO 2023241931 A1 WO2023241931 A1 WO 2023241931A1 EP 2023064677 W EP2023064677 W EP 2023064677W WO 2023241931 A1 WO2023241931 A1 WO 2023241931A1
Authority
WO
WIPO (PCT)
Prior art keywords
mass
meth
adhesive layer
acrylate
functional unit
Prior art date
Application number
PCT/EP2023/064677
Other languages
German (de)
English (en)
Inventor
Markus Schindler
Robert Hofmockel
Severin Ringelstetter
Original Assignee
Delo Industrie Klebstoffe Gmbh & Co. Kgaa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delo Industrie Klebstoffe Gmbh & Co. Kgaa filed Critical Delo Industrie Klebstoffe Gmbh & Co. Kgaa
Publication of WO2023241931A1 publication Critical patent/WO2023241931A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the invention relates to a method for producing wafer-level electronic assemblies, in particular wafer-level microelectronic assemblies, and a product manufactured using the method.
  • wafer level here and below means that at least two electronic assemblies with their respective electronic functional units are structurally connected to one another and are separated in a downstream process step in order to obtain the individual electronic assemblies.
  • wafer-level packaging optimizes the manufacturing process in such a way that a large number of electronic assemblies can be arranged at small distances from one another and functional tests can be carried out on the entire wafer before the electronic assemblies are separated.
  • the electronic assemblies are microelectronic assemblies, the handling of which is made additionally difficult by the further reduced size of the respective microelectronic assembly.
  • Both so-called “fan-out” and so-called “fan-in” wafer-level packaging are known.
  • conductor tracks and electrical connections of the electronic assembly are located not only below the base area of the respective functional unit, but also outside this base area.
  • the conductor tracks are therefore “fanned out” compared to the base area of the functional unit.
  • the conductor tracks and electrically conductive connections are located exclusively below the base area of the functional unit.
  • a base carrier is provided on a first side with a temporary adhesive layer, which can be thermally removed.
  • Functional units such as chips are attached to this temporary adhesive layer with their active, electrically contactable side, whereupon the temporary adhesive layer is hardened and the functional units are then encapsulated with a potting layer. With the application of heat, the temporary adhesive layer between the first side and the encapsulated functional units is removed again, so that the electrically contactable side is accessible for later contacting.
  • Warpage describes the warping of the wafer that occurs when the functional units are encapsulated with a potting compound.
  • the base support which can be a glass plate, for example
  • the organic casting compounds which usually have significantly higher thermal expansion coefficients
  • This effect is all the more pronounced the larger the potted area is and can lead to severe warping of the wafer, which is already visible to the naked eye.
  • Further processing is usually carried out using a vacuum suction plate, which cannot pick up a warped wafer and transport it to the next station.
  • the “warpage” effect also has a negative influence on the reliability of individual (micro)electronic assemblies over their service life.
  • the warping of the wafer can be counteracted by using highly filled, thermosetting materials.
  • Such compounds usually have a high viscosity, with the highly viscous casting compounds exerting a so-called drag force on the functional units during metering. This material property causes the functional units placed on the temporary adhesive layer to shift from their original position.
  • LCM process also known as “liquid compression molding”
  • Such a procedure also leads to the functional units moving away from their original position.
  • heat-curing resins in particular epoxy resins, are primarily used, the coefficient of thermal expansion of which is adapted to the carrier substrate by adding fillers.
  • plate-shaped “prepregs” are used as the encapsulation material.
  • Prepregs are fibers pre-impregnated with reaction resins (also known as “preimpregnated fibers”).
  • reaction resins also known as “preimpregnated fibers”.
  • a cellulose fleece is soaked with, for example, an SiO2-filled epoxy resin.
  • the encapsulation is carried out by laminating the plate-shaped prepreg onto the functional units with pressure, for example with a pressure of 0.1 to 5 MPa.
  • the warping of the wafer can be reduced with this approach, but the use of fibers still has the disadvantage of low flexibility.
  • high pressure is essential, which in turn can lead to the functional units being displaced.
  • US 9,853,000 B2 shows another approach.
  • a “warpage” leveling layer for example made of SiN or SiC, is applied to the package layers using a removable adhesive.
  • a “warpage” leveling layer for example made of SiN or SiC
  • a removable adhesive By determining the curvature, it is determined where the adhesive needs to be removed so that the “warpage” effect can be compensated for and sufficiently reduced. Detachment can be done using laser ablation or UV light.
  • the disadvantage of this approach is the high effort involved in treating and removing the compensation layer.
  • US 10211 072 B2 describes a method that prevents the functional units from being moved. After the functional units have been placed on a releasable adhesive layer on the base support, before applying a casting compound, a UV-curable immobilization compound is applied via a process gas, which comprises monomers and at least one initiator precursor.
  • the initiator precursors are thermally converted into reactive initiators in order to polymerize the monomers to form the immobilization mass.
  • This serves to fix the functional units on the removable adhesive layer and can be applied either completely or only selectively on the sides. A deviation from the original position can thus be significantly reduced or largely prevented.
  • the process complexity increases due to the need to apply the additional immobilization mass.
  • a base material layer for example consisting of polypropylene (PP) or polyethylene terephthalate (PET) is provided on a first side with an adhesive layer made of (meth)acrylate, which serves to temporarily fix functional units.
  • a second, thermally releasable adhesive layer containing heat-expandable particles is applied to a second side of the base material layer.
  • On the second A glass carrier is attached to the adhesive layer.
  • the composite of functional units, three-layer structure and glass carrier is pre-hardened at temperatures below the release temperature of the heat-expandable particles (also referred to as the “trigger temperature”). This pre-curing step increases the adhesion force of the first adhesive layer with respect to the functional unit.
  • the aim is to prevent the additionally fixed functional units from shifting.
  • the shifting of the functional units in the process cannot be avoided or can only be solved inadequately, it is possible in a later, complex process step to compensate for the deviations during the application of the redistribution layer.
  • the actual position of the functional units is determined and the template for the copper conductor tracks is aligned to the measured position.
  • the copper conductor tracks are then applied dynamically adapted to the measured position of the functional units. This process is also called “Adaptive PatterningTM”, but it involves a lot of effort.
  • the invention is based on the object of at least partially overcoming the disadvantages of the prior art and of providing a method through which cost-effective (micro-)electronic assemblies, in particular at the wafer level, can be produced easily and quickly.
  • the invention is intended to achieve a simplification of the manufacturing process while simultaneously achieving high yields and good quality as well as reduced manufacturing costs.
  • the object of the invention is achieved by a method for producing electronic assemblies at wafer level according to claim 1. Further embodiments of the invention are specified in the subclaims, which can optionally be combined with one another.
  • the method according to the invention for producing electronic assemblies at the wafer level comprises the following steps: a) providing a irradiable base carrier with a first side and a second side, b) generating a temporary adhesive layer by applying a first mass to the first side of the irradiable base carrier with formation a carrier substrate, wherein the first mass comprises a (meth)acrylate and a photoinitiator, c) placing at least one functional unit with an electrically contactable side of the functional unit on the temporary adhesive layer, d) forming a temporary composite of the carrier substrate and the at least one functional unit by means of Hardening of the first mass by irradiation with actinic radiation, the irradiation taking place from the second side of the irradiable base support through the base support, e) applying a casting layer to the temporary composite by metering a second mass onto the at least one functional unit and onto the temporary Adhesive layer, wherein the second mass is a radiation-curable mass, f) forming
  • a particularly simple method for producing electronic assemblies at wafer level can be implemented by using both a temporary adhesive layer for the interim Fixing the at least one functional unit as well as in a mass for producing the potting layer, a radiation-curable mass is used.
  • This mechanism for hardening the materials used is available for both materials according to the invention in that a base support that can be irradiated is used.
  • the use of a radiation-curable potting compound counteracts warpage and die shift effects. In this way, wafer-level electronic assemblies of high quality are obtained with at least a reduced error rate, thereby providing a more efficient and cost-effective process.
  • individual electronic assemblies can be produced by separating the electronic assembly at wafer level.
  • the term “irradiable” base carrier refers to a base carrier that is transparent to the actinic radiation used to harden or harden the first mass and the second mass to such an extent that the first and/or the second mass can be hardened over the entire layer thickness of the masses can be achieved.
  • the base support preferably has a transmittance for the actinic radiation of at least 75%.
  • actinic radiation refers to electromagnetic radiation that has a photochemical activity towards at least one component that is exposed to the electromagnetic radiation.
  • the second mass is metered not only onto the at least one functional unit, but also onto the temporary adhesive layer, so that surface areas of the temporary adhesive layer, which are arranged between the functional units, are also at least partially, in particular completely, coated with the second mass.
  • a uniform casting layer is obtained in a single and easy-to-implement process step, which counteracts “die shift” particularly effectively.
  • the electronic assembly is preferably a microelectronic assembly.
  • the method according to the invention is therefore used to produce an electronic assembly at the wafer level, preferably a microelectronic assembly at the wafer level.
  • the second side of the irradiable base carrier is arranged in particular opposite to the first side of the base carrier. In this way, it is particularly easy to harden the first mass as evenly as possible in order to form the temporary bond.
  • the structure of a device for carrying out the method according to the invention can be further simplified.
  • the base support can be made of glass or plastic.
  • the choice of the material of the base support depends in particular on the required mechanical stability that the base support provides during the manufacturing process, as well as the actinic radiation used to harden the first mass and the second mass, the base support being sufficiently affected by the actinic radiation used in each case is irradiable.
  • the plastic of the base support can be selected, for example, from the group of polysulfones, polyethersulfones, cycloolefin polymers, polyamides, polyimides, polyamide-imides, polyesters and polycarbonates as well as blends and/or copolymers of these polymers.
  • the thickness of the base support is in particular in a range between 100 pm and 3000 pm.
  • Base supports with a thickness of less than 100 ⁇ m are difficult to handle, so that the effort required to carry out the method according to the invention with such base supports would be excessively increased.
  • the first mass is applied to create the temporary adhesive layer, for example by means of spin coating or stencil printing.
  • the layer thickness of the temporary adhesive layer is in particular in a range between 5 pm and 500 pm, in particular in a range between 10 pm and 300 pm, preferably in a range between 30 pm and 150 pm, taking into account the specified range limits.
  • a thinner adhesive layer can result in insufficient adhesion of the functional unit(s). have, while greater layer thicknesses result in excessive use of material and make it difficult to harden the first mass evenly.
  • the functional unit(s) can be placed on the temporary adhesive layer using a so-called “pick & place” device.
  • the at least one functional unit can be selected from the group of active functional units and passive functional units.
  • Active functional units are controllable and able to amplify an incoming signal.
  • active functional units are transistors, diodes, rectifiers, processors, ICs (“integrated circuits”) and LEDs (“light emitting diodes”).
  • passive functional units In contrast to active functional units, passive functional units have no reinforcing effect.
  • passive functional units are capacitors, potentiometers, oscillators, coils and resistors.
  • the functional units only have exposed contact points on their electrically contactable side.
  • the functional units on their electrically contactable side have, in addition to the exposed contact points, electrically conductive connections that are assigned to the contact points.
  • the hardening of the first mass and/or the second mass can be carried out by irradiation with actinic radiation of a wavelength in a range from 200 nm to 1000 nm, in particular in a range from 320 nm to 480 nm. It is understood that the first mass and the second mass can be hardened with actinic radiation of the same or different wavelength.
  • “Curing” is defined as a polymerization or addition reaction beyond the gel point of the respective mass.
  • the gel point is the point at which the storage modulus G' becomes equal to the loss modulus G'.
  • the first mass hardened by irradiation with actinic radiation, can be removed by heating.
  • the bond between the carrier substrate and the electronic assembly is broken at the wafer level.
  • the detachment temperature can be generated by irradiation with IR radiation of a wavelength in the range from 780 nm to 1000 nm, the IR radiation being generated in particular by an oven or a hot plate. This enables particularly simple process management and thus further reduces the costs of the process. In principle, a mechanical force can also be exerted on the carrier substrate in order to further accelerate the detachment.
  • the temporary adhesive layer is provided using the first composition, the first composition comprising a (meth)acrylate and a photoinitiator, in particular a photoinitiator for radical polymerization.
  • Component (A) of the first mass (meth)acrylate
  • monofunctional aromatic (meth)acrylates are 2-(o-phenylphenoxy)-ethyl (meth)acrylate, 2-(o-phenoxy)ethyl (meth)acrylate, ortho-phenylbenzyl (meth)acrylate, ethoxylated nonylphenol (meth) acrylate and ethoxy-phenyl acrylate.
  • component (A) can also preferably comprise di- or higher-functional crosslinkers (A2), in particular based on (meth)acrylates.
  • the (meth)acrylates mentioned are commercially available, for example, from the companies Arkema Sartomer, BASF, IMG Resins, Sigma Aldrich or TCI.
  • Urethane (meth)acrylates based on polyesters, polyacrylates, polyisoprenes, polyethers, polycarbonate diols and/or (hydrogenated) polybutadiene diols can be used as higher molecular weight, free-radically polymerizable compounds. These are typically di- or higher-functional.
  • component (A) preferably comprises an at least difunctional crosslinker (A2) based on an aliphatic and/or aromatic urethane (meth)acrylate.
  • urethane (meth)acrylates examples include Visiomer HEMA-TMDI, available from Evonik, SUO-1020 NI (polycarbonate base) or SUO-H8628 (polybutadiene base), available from Shin-A T&C, CN9014NS, available from Sartomer, UV-3200B (polyester base), available from Nippon Goshei, or the XMAP types (polyacrylate base), available from Kaneka.
  • free-radically polymerizable compounds (A) that can be used in the context of the invention are acrylic acid and methacrylic acid, acrylamides, acryloylmorpholines, bismaleimides, N-vinyl compounds such as vinylmethyloxazolidinone (VMOX), N-vinylcaprolactam, N-vinylpyrrolidone and N-vinylimidazole, as well as compounds with allyl groups, such as 1,3,5-triallyl-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, which is commercially available as TAICROS®.
  • VMOX vinylmethyloxazolidinone
  • N-vinylcaprolactam N-vinylpyrrolidone
  • N-vinylimidazole N-vinylimidazole
  • allyl groups such as 1,3,5-triallyl-1,3,5-triazine-2,4,6(1H,3H,5H)-tri
  • Unhydrogenated polybutadienes with free double bonds such as the Poly BD® types, can also be used as free-radically polymerizable compounds.
  • the component (A) is preferably present in the first compositions according to the invention in a proportion of 5 to 98% by weight, preferably from 10 to 90% by weight or from 15 to 85% by weight, in each case based on the total weight of the first mass.
  • the proportion of monofunctional (meth)acrylates (A1) in component (A) is preferably from 1 to 100%, more preferably from 1 to 95%, 1 to 80% or from 1 to 60%, in each case based on the total weight of the Component (A).
  • the proportion of at least difunctional crosslinkers (A2) in component (A) is preferably from 0 to 99%, more preferably 5 to 99%, 20 to 99% or 40 to 99%, in each case based on the total weight of component (A) .
  • component (A) consists of the monofunctional (meth)acrylate (A1) and the at least difunctional crosslinker (A2) based on a (meth)acrylate and/or urethane (meth)acrylate.
  • Component (B) of the first mass photoinitiator
  • the first compositions according to the invention comprise at least one photoinitiator (B), in particular a photoinitiator for radical polymerization.
  • the usual, commercially available compounds can be used as radical photoinitiators (B), such as a-hydroxyketones, benzophenone, a,a'-diethoxyacetophenone, 2-benzyl-2-(dimethylamino)-4'-morpholinobutyrophenone, 4-isopropylphenyl -2-hydroxy-2-propyl ketone, 4,4-bis(diethylamino)benzophenone, 2-ethylhexyl-4-(dimethylamino)benzoate, ethyl 4-(dimethylamino)benzoate, 2-butoxyethyl-4-(dimethylamino)benzoate, 1-Hydroxycyclohexylphenyl ketone, isoamyl-p-dimethylaminobenzoate,
  • the first mass preferably comprises at least one latent release agent (C).
  • thermo-expandable microcapsules (C1) can be found, for example, in US 3,615,972 A, US 9,902,829 B2 or US 8,486,531 B2.
  • Blowing agents based on a nitrogen compound (C2) decompose at elevated temperatures with a high gas yield to form gaseous decomposition products, for example nitrogen, carbon monoxide, carbon dioxide, ammonia, hydrogen and combinations thereof.
  • the latent release agent (C) is present in the first mass in particular in a proportion of 1 to 50% by weight, preferably from 5 to 45% by weight, more preferably from 10 to 40 or 15 to 25% by weight, each based on the total weight of the first mass.
  • fillers (D1) is in no way limited with regard to particle shapes (such as angular, spherical, platelet or needle-shaped, hollow shapes) and particle sizes (macroscopic, microscopic, nanoscale).
  • particle shapes or particle sizes or particle size distributions can also be used in combination in order to achieve, for example, a low viscosity, a higher maximum filling level and/or a high electrical and thermal conductivity.
  • An effect enhancer (D2) for the latent release agent (C) can also be provided as an additive (D).
  • the further additives (D3) are preferably selected from the group consisting of dyes, pigments, anti-aging agents, fluorescent agents, sensitizers, accelerators, stabilizers, adhesion promoters, drying agents, crosslinkers, flow improvers, wetting agents, thixotropic agents, non-reactive
  • the first mass for forming the temporary adhesive layer can contain compounds (D4) which improve the thermal absorption behavior of the masses, for example when irradiated with infrared light. This leads to a faster and more efficient heat input and thus to a simplified removal of the carrier substrate in the method according to the invention.
  • IR absorbers as described in EP 3 943 534 A1, can advantageously be used as compound (D4) in additive (D).
  • the first mass comprises or consists of 5 to 98% by weight of the (meth)acrylate (A), 0.01 to 5% by weight of the photoinitiator (B), 1 to 50% by weight of the latent release agent (C) and 0 to 70% by weight of the additive (D), each based on the total weight of the first mass.
  • radiation-curable casting compounds enables a reduction in cycle times during the manufacturing process, as radiation curing can be carried out more quickly than thermal curing processes.
  • thermal expansion of the second mass is reduced during the hardening process and thus the introduction of stresses into the components involved is reduced.
  • compositions which are dual-curing i.e. are both actinically radiation-curable and additionally heat-curing, can also be used as a second composition.
  • a post-hardening step can be provided, that is, additional hardening or hardening by means of hot hardening after the precursor has been formed.
  • the second mass for producing the potting layer is not subject to any further chemical restrictions as long as it is actinically radiation-curable.
  • the second mass comprises at least one (meth)acrylate and a photoinitiator for the radical polymerization.
  • the second mass can therefore be formulated from components analogous to the first mass, although the second mass has no thermal detachability.
  • the second mass does not separate from the encapsulated functional units at the release temperature of the hardened first mass.
  • component (C) is not present in the second mass.
  • the second mass is in particular free of the latent release agent (C).
  • the second mass can in particular be composed of components (A), (B) and (D) of the first mass, with the same or different compositions being able to be used.
  • suitable compounds of components (A), (B) and (D) for the second mass reference is made to the examples of the corresponding components (A), (B) and (D) described previously for the first mass.
  • the second mass comprises in particular 5 to 98% by weight of the (meth)acrylate (A), 0.01 to 5% by weight of the photoinitiator (B) and 0 to 90% by weight of the additive (D ).
  • the second mass in this embodiment contains as additive (D) proportions of inorganic fillers in a proportion of up to 85% by weight, based on the total weight of the second mass. This leads to an additional reduction in shrinkage when the second mass is hardened, further minimizing the introduction of stresses into the components involved.
  • D additive
  • the radiation-curable second mass, and thus the casting compound is cationically polymerizable.
  • the second mass in the second embodiment comprises at least one cationically polymerizable component, which is described in more detail below.
  • Component (a) of the second mass cationically polymerizable component
  • the cationically polymerizable component (a) is not further restricted in terms of its chemical basis.
  • the cationically polymerizable component is preferably selected from the group consisting of epoxide-containing compounds (a1), oxetane-containing compounds (a2), vinyl ethers (a3) and combinations thereof.
  • the cationically polymerizable component can additionally contain one or more alcohols (a4) as chain transfer agents and/or cationically polymerizable hybrid compounds (a5). It is also possible to use cyclic lactones or carbonates as cationically polymerizable component (a).
  • the epoxide-containing compound (a1) can include aliphatic, aromatic and/or cycloaliphatic epoxy compounds.
  • the epoxide-containing compound (a1) in the second compositions according to the invention preferably comprises one or more at least difunctional epoxide-containing compounds.
  • At least “difunctional” means that the epoxy-containing compound contains at least two epoxy groups.
  • the cationically polymerizable component (a) preferably comprises at least one aromatic epoxy compound.
  • the group of aromatic epoxy compounds includes, for example, bisphenol A epoxy resins, bisphenol F epoxy resins, phenol novolak epoxy resins, cresol novolak epoxy resins, biphenyl epoxy resins, 4,4'-biphenyl epoxy resins, divinyl benzene dioxide, glycidyl phenyl ether, naphthalene diol diglycidyl ether, glycidyl ether of Tris( hydroxyphenyl)methane, p-tert-butylphenol glycidyl ether and glycidyl ether of tris(hydroxyphenyl)ethane, and mixtures thereof.
  • the group of cycloaliphatic epoxy compounds includes, for example, cyclohexenylmethyl-3-cyclohexylcarboxylate diepoxide, 3,4-epoxycyclohexyl-alkyl-3',4'-epoxycyclohexanecarboxylate, 3,4-epoxy-6-methylcyclohexylmethyl-3',4'-epoxy-6-methylcyclohexanecarboxylate , vinylcyclohexene dioxide,
  • Isocyanurates and other heterocyclic compounds substituted with epoxide-containing groups can also be used in the second ones according to the invention Masses can be used as component (a1). Triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate may be mentioned as examples.
  • polyfunctional epoxy resins of all of the compound classes mentioned, tough-elasticated epoxy resins and mixtures of various epoxy compounds can be used in the second compositions according to the invention.
  • monofunctional epoxides can also be used as reactive diluents.
  • Examples of commercially available monofunctional epoxides are products available under the trade name Glycirol ED 509-S from Adeka, D.E.R. 727 from Olin, Heloxy Modifier AQ from Hexion, Cardolite Ultra Lite 513 from Cardolite or iPox RD 17 from iPox Chemicals GmbH.
  • Examples of other commercially available di- or higher-functional aliphatic epoxy compounds are products available under the trade names iPox RD21, iPox CL60, iPox CL9 from ipox Chemicals GmbH or YED-216D from Mitsubishi Chemical, Japan or Heloxy Modifier HD from the company Hexion or Araldite DY 3601 from Huntsman.
  • Examples of commercially available cycloaliphatic epoxy compounds are products sold under the trade names CELLOXIDETM 2021 P, CELLOXIDETM 8000 from Daicel Corporation, Japan or Omnilane 1005, Omnilane 2005, Omnilane OC 3005 from IGM Resins B.V. or TTA21, TTA26 and TTA60 from Jiangsu Tetra New Material Technology Co. Ltd. or Syna Epoxy 21 from Synasia I nc. , to be expelled.
  • Epoxy compounds containing basic groups that can inhibit cationic curing are not preferred.
  • the second mass is preferably free of glycidylamines.
  • oxetane-containing compounds (a2) can also be used in the second mass as a component of the cationically polymerizable component (a).
  • Processes for producing oxetanes are known in particular from US 2017/0198093 A1.
  • vinyl ethers (a3) can also be used as cationically polymerizable components in the second mass.
  • Suitable vinyl ethers are trimethylolpropane trivinyl ether, ethylene glycol divinyl ether and cyclic vinyl ethers and mixtures thereof. Vinyl ethers of polyfunctional alcohols can also be used.
  • the cationically polymerizable component can also comprise one or more alcohols (a4), which are used as chain transfer agents.
  • alcohols (a4) which are used as chain transfer agents.
  • Higher molecular weight polyols in particular can be used to make cationic masses more flexible.
  • Suitable polyols are available, for example, based on polyethers, polyesters, polycaprolactones, polycarbonates, polybutadiene diols or hydrogenated polybutadiene diols.
  • hybrid compounds (a5) can also be used.
  • these also contain radically radiation-curable groups.
  • epoxy (meth)acrylate hybrid compounds are within the meaning of the invention.
  • examples of commercially available epoxy (meth)acrylates are CYCLOMER M100 from Daicel, Epoxy Acrylat Solmer SE 1605, UVACURE 1561 from UCB, Miramer PE210HA from Miwon Europe GmbH and Solmer PSE 1924 from Soltech Ltd.
  • Oxetane (meth)acrylates such as ETERNACOLL OXMA from UBE Industries LTD can also be used as a hybrid compound (A5).
  • a mixture of the cationically polymerizable components (a1) to (a5) mentioned is also within the meaning of the invention.
  • Component (b) of the second mass initiators for the cationic polymerization
  • the initiators (b) are also described below as “photolatent acids”, if they can be activated by actinic radiation, or “heat-latent acids”, if they can be activated thermally.
  • Preferred metallocenium compounds are selected from the group of ferrocenium salts.
  • the photoinitiator (b1) used in the second mass according to the invention is preferably irradiated with actinic radiation of a wavelength in Can be activated in the range from 200 to 480 nm, more preferably at a wavelength of 250 to 365 nm.
  • a mixture of photoinitiators (b1) which can be activated at different excitation wavelengths can also be used.
  • the metallocenium-based photoinitiators may have an excitation wavelength in the range of 400 to 700 nm, preferably in the range of 430 to 500 nm.
  • the excitation wavelength of the onium compounds used as photoinitiators is in particular in the range from 200 to 380 nm, preferably from 300 to 380 nm.
  • the photoinitiator (b1) can be combined with a suitable sensitizing agent.
  • Thermally activated acid generators (b2) are known in the prior art.
  • heat-latent acids based on an aromatic sulfonium salt can be used, which can be activated by heating and releases an acid suitable for the cationic polymerization of component (a).
  • the thermally activatable acid generator (b2) can comprise a large number of anions.
  • anions for example, antimonates, fluorophosphates, aluminates, titanates and borate anions, such as BF 4 ' and B(C6F 5 )4 _ are within the meaning of the invention.
  • SAN-AI D SI-B2A SAN-AI D SI-B3A
  • SAN-AI D SI-B7 SAN-AI D SI-45
  • SAN-AI D SI-60 SAN-AI D Sl- 80
  • SAN-AID SI-100 from San-Shin Chemical Industry Co. Ltd.
  • quaternary N-benzylpyridinium salts and N-benzylammonium salts are suitable as thermally activatable acid generators (b2), as disclosed in EP 0 343 690 A2 or WO 2005/097883 A2.
  • K-PLIRE CXC-1614 K-PURE CXC-1821 or K-PURE CXC-1733.
  • the initiator (b) for the cationic polymerization is present in the second embodiment of the second mass, based on the total weight of the second mass, according to the invention in particular in a proportion of 0.01 to 5% by weight, based on the total weight of the second mass .
  • the second mass according to the invention contains, in addition to components (a) and (b), optionally an additive (d).
  • the additive (d) is further preferably an inorganic filler and is in particular present in a proportion of up to 85% by weight, based on the total weight of the second mass.
  • latent release agents (C) is also dispensed with in the second compositions of the second embodiment.
  • no “component (c)” analogous to component (C) of the first mass exists in the second embodiment of the second mass.
  • the second mass may contain a thermochromic filler.
  • the color of the potting layer can be used to determine its temperature, which enables even more precise control of the process flow in the production of the electronic assembly.
  • the thermochromic filler due to the thermochromic filler, the casting layer becomes opaque under the influence of IR rays as soon as a predetermined process temperature is reached, in particular as soon as the release temperature of the hardened first mass is reached.
  • Opaque means that the UV-VIS transmittance of the hardened casting layer at 450 nm and a layer thickness of 200 pm is at least 25% lower after carrying out the method according to the invention than before irradiation.
  • an electronic assembly at the wafer level obtainable according to a method as described above, comprising at least one functional unit encapsulated by a potting layer in such a way that the electrically contactable side of the functional unit is exposed.
  • the wafer-level electronic assembly is a wafer-level microelectronic assembly.
  • the object of the invention is achieved by an electronic assembly, obtained by separating the electronic assembly at wafer level according to claim 14.
  • FIG. 1a - h a sequence of steps of a first embodiment of a method according to the invention for producing an electronic assembly on wafer level for the “fan-out” wafer level packaging process;
  • FIG. 1a and 2a each show the provision of a irradiable base carrier 10 (cf. step S1 in FIG. 3), with FIG. 1a showing a cross-sectional view through the base carrier 10.
  • the base support 10 consists of a rigid, irradiable material such as glass or plastic and has a first side 10a and a second side 10b, which is arranged opposite to the first side 10a.
  • the irradiable base support 10 can have any geometric shapes, for example that of a rectangle or a circle, when viewed in the direction of the first side 10a.
  • the thickness of the base support is in a range between 100 pm and 3000 pm.
  • the irradiable base support 10 is coated with a first mass, forming a temporary adhesive layer 12 (cf. step S2 in FIG. 3).
  • the first mass is dosed onto the first side 10a of the irradiable base carrier 10.
  • Suitable dosing methods include spin coating or stencil printing.
  • the first mass, and thus also the temporary adhesive layer 12 produced from the first mass, can be hardened by actinic radiation and can be removed from the base carrier 10 by heat.
  • the layer thickness of the temporary adhesive layer 12 is in a range between 5 pm and 500 pm, in particular in a range between 10 pm and 300 pm, preferably in a range between 50 pm and 200 pm.
  • the irradiable base carrier 10 and the temporary adhesive layer 12 together form a carrier substrate 14.
  • the functional units 16 are active functional units, for example transistors, diodes, rectifiers, processors, ICs and/or LEDs, or passive functional units, for example capacitors, potentiometers, oscillators, coils and/or resistors.
  • the functional units 16 have contact points 18 on their base area facing the temporary adhesive layer 12, which serve to electrically contact the respective functional unit 16.
  • FIG. 2c shows the corresponding illustration for the “fan-in” process, in which the functional unit 16 additionally has electrically conductive connections 20, each of which is assigned to one of the contact points 18.
  • the electrically conductive connections 20 consist, for example, of a solder alloy, a combination of copper and a solder alloy or pure copper.
  • the “fan-in” process differs from the “fan-out” process in that the functional units 16 are equipped not only with the contact points 18, but also with the electrically conductive connections 20. (d) Forming a temporary composite of carrier substrate and functional units
  • the temporary adhesive layer 12 is, as shown in FIGS. 1d and 2d, passed through the underside, that is, starting from the second side 10b of the irradiable base carrier 10, by irradiation actinic radiation 22 hardened (cf. step S4 in FIG. 3), in particular hardened.
  • the actinic radiation 22 has a wavelength in the range from 200 nm to 1000 nm, in particular in a range from 320 to 480 nm.
  • LED lamps from DELO industrial adhesives can be used, such as the DELOLUX 20, DELOLUX 202, DELOLUX 203 or DELOLUX 820.
  • the carrier substrate 14, i.e. the base carrier 10 and the hardened, in particular hardened, temporary adhesive layer 12, as well as the at least one functional unit 16 together form a temporary composite 24 in this way.
  • 1e and 2e show that a second mass is applied to the temporary composite 24 to create a casting layer 26 (cf. step S5 in FIG. 3), that is to say both via the at least one functional unit 16 and on the Areas of the hardened, in particular hardened, temporary adhesive layer 12 surrounding the functional units 16.
  • the layer thickness of the casting layer 26 is in a range between 1 pm and 2000 pm, in particular in the range between 50 pm and 1000 pm and preferably in the range between 100 and 700 pm, measured starting from the top of the temporary adhesive layer 12 pointing in the direction of the functional units 16 .
  • the potting layer 26 in particular has a thickness that corresponds at least to the height of the functional units 16.
  • suitable application methods for the second mass are, for example, screen printing, stencil printing or UV molding.
  • the second mass of the casting layer 26 is, analogous to the hardening of the temporary adhesive layer 12 in FIGS. 1d and 2d, hardened, in particular hardened, by irradiation with actinic radiation 28 to form a precursor 30 (cf. step S6 in FIG. 3), as shown in Figures 1f and 2f.
  • the precursor 30 includes the base carrier 10, the (hardened) temporary adhesive layer 12, the functional units 16 and the (hardened) potting layer 26.
  • the actinic radiation 28 can be in a wavelength range from 200 nm to 1000 nm, in particular in a range from 320 to 480 nm.
  • lamps from DELO industrial adhesives can be used, such as the DELOLUX 20, DELOLUX 202, DELOLUX 203 or DELOLUX 820.
  • the entire potting surface that is, the entire side of the precursor 24 pointing upwards in FIGS. 1e and 2e, is simultaneously irradiated with a surface emitter.
  • the entire casting layer 26 is therefore hardened simultaneously and in one step.
  • a further embodiment provides for selective, scanning irradiation.
  • the potting layer 26 is hardened point by point one after the other using a laser point source (not shown) or a narrowly focused LED lamp. This enables the hardening to be decoupled in terms of time and location, meaning that hardening shrinkage only occurs locally and at certain points.
  • suitable optics e.g. a MEMS mirror system
  • rapid scanning of large areas can be achieved despite the selective hardening.
  • the carrier substrate 14 is detached from the precursor 30 to form an electronic assembly at wafer level 32 (cf. step S7 in FIG. 3).
  • the precursor 30 is heated, for example by means of an IR radiator (not shown), an oven or a heating plate, as indicated by the arrows 34 in FIGS. 1g and 2g, which schematically indicate the acting IR radiation.
  • an IR radiator not shown
  • an oven or a heating plate as indicated by the arrows 34 in FIGS. 1g and 2g, which schematically indicate the acting IR radiation.
  • the precursor 30 is irradiated, for example, with IR radiation with a wavelength of 780 to 1000 nm and brought to a release temperature between 50 ° C and 300 ° C, in particular to a temperature between 100 ° C and 250 ° C , preferably to a temperature between 180 °C and 220 °C.
  • thermal debonding causes so-called “thermal debonding” to take place, so that the hardened, in particular hardened, temporary adhesive layer 12 is separated from the remaining components of the precursor 30 and the electronic assembly is obtained at wafer level 32.
  • the electronic assembly at wafer level 32 thus includes the (hardened) potting layer 26 and the functional units 16, whose electrical contact points 18 are exposed again after the carrier substrate 14 has been removed.
  • the electrically conductive connections 20 also remain part of the electronic assembly at wafer level 32.
  • Removal can also be assisted by mechanical forces.
  • the electronic assembly at wafer level 32 is now available for further processing steps such as grinding and dicing.
  • the hardened, in particular hardened, temporary adhesive layer 12 is preferably removed without leaving any residue, so that additional grinding, washing or cleaning steps can be dispensed with.
  • the microelectronic assembly at wafer level 26 obtained after the temporary carrier substrate 14 has been removed can be seen in FIG. 1h for the “fan-out” process.
  • the at least one functional unit 16 is embedded in the potting layer 20 from three sides, while the contact points 18 are exposed for the application of a redistribution layer.
  • FIG. 2h shows the microelectronic assembly at wafer level 32, the functional units 16 of which are exposed with their active side and with the electrically conductive connections 20.
  • a first mass was applied via spin coating to a transmissible, round base support 10 made of glass, hereinafter also referred to as a glass support, with a diameter of 12 inches (30.48 cm) and a height of 1 mm, in order to create a temporary adhesive layer 12 with a To create a layer thickness of 200 pm on the top of the glass slide.
  • a transmissible, round base support 10 made of glass, hereinafter also referred to as a glass support, with a diameter of 12 inches (30.48 cm) and a height of 1 mm, in order to create a temporary adhesive layer 12 with a To create a layer thickness of 200 pm on the top of the glass slide.
  • the first mass used for the temporary adhesive layer 12 consisted of the following components:
  • thermo-expandable microcapsules (C1) 5 to 45% by weight of thermo-expandable microcapsules (C1) as a latent release agent
  • the first mass for the temporary adhesive layer 12 was cured over the underside of the glass carrier under an oxygen-reduced atmosphere (proportion O2 ⁇ 10% by volume) for 30 s with a wavelength of 400 nm and an intensity of 200 mW/cm 2 .
  • a second mass for the potting layer 26 was then dosed onto the functional units 16 and distributed with a stamp to a uniform layer thickness of 700 ⁇ m.
  • the functional units 16 have a height of less than 700 pm.
  • a second mass for the potting layer 26 was then dosed onto the functional units 16 and distributed with a stamp to a uniform layer thickness of 700 ⁇ m.
  • the second mass used for the casting layer 26 consisted of the following components:
  • the second mass is formulated to be free of latent release agent (C).
  • the process according to the invention offers a high degree of freedom in formulation, so that both a free-radically polymerizable material and a cationically polymerizable material can be used for the second material, as long as the materials are radiation-curable.
  • thermosetting materials When using known thermosetting materials, however, a much more pronounced “die shift” is observed, which requires further processing steps of the resulting electronic assembly at wafer level or even makes it unusable.
  • the second masses for the potting layer 26 described for Examples 1 and 2 are placed on a round base carrier 10 made of glass with a diameter of 12 inches (30.48 cm). and a height of 1 mm.
  • measuring lines are used, each of which runs over the uncoated outer area of the base support 10 as well as over the free-floating glass plate underneath.
  • the four measuring lines lie on two orthogonal straight lines, the intersection of which lies at the center of gravity of the circular base support 10 (in the case of a rectangular base support 10, at the center of gravity of the rectangular base support 10).
  • the straight lines are oriented so that they intersect the boundary of the base support 10 perpendicularly.
  • the measurement after 24 hours takes into account any post-hardening and/or post-crosslinking of the second mass. In this way, the behavior in typical manufacturing processes for (micro)electronic assemblies is simulated, in which analog precursors are usually only processed further after a waiting period has been observed.
  • both a radiation-curable second mass based on a radically polymerizable system and a radiation-curable second mass based on a cationically polymerizable system have a curvature 24 hours after the respective mass has hardened, with which further processing of a corresponding wafer would be possible without any problems .

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Est divulgué un procédé de production d'ensembles électroniques au niveau d'une tranche (32), comprenant les étapes suivantes : la fourniture d'un support de base pénétrable par rayonnement (10) ayant un premier côté (10a) et un second côté (10b) ; la génération d'une couche adhésive temporaire (12) par application d'un premier composé sur le premier côté (10a) du support de base pénétrable par rayonnement (10) de façon à former un substrat de support (14), le premier composé comprenant un (méth)acrylate et un photoinitiateur ; le placement d'au moins une unité fonctionnelle (16) sur la couche adhésive temporaire (12) avec un côté pouvant être mis en contact électrique de l'unité fonctionnelle (16) ; la formation d'un composite temporaire (24) constitué du substrat de support (14) et de la ou des unités fonctionnelles (16) par durcissement du premier composé par irradiation avec un rayonnement actinique (22), l'irradiation étant effectuée à travers le support de base pénétrable par rayonnement (10) à partir du second côté (10b) du support de base (10) ; l'application d'une couche d'enrobage (26) sur le composite temporaire (24) par dosage d'un second composé sur la ou les unités fonctionnelles (16) et sur la couche adhésive temporaire (12), le second composé étant un composé qui est durcissable par irradiation ; la formation d'un précurseur (30) par durcissement du second composé par irradiation avec un rayonnement actinique (28) ; et le détachement du substrat de support (14) par introduction de chaleur dans la couche adhésive temporaire (12) de façon à former l'ensemble électronique au niveau d'une tranche (32). Sont également divulgués un ensemble électronique de niveau d'une tranche (32) et un ensemble électronique.
PCT/EP2023/064677 2022-06-14 2023-06-01 Procédé de production d'ensembles électroniques et ensemble électronique au niveau d'une tranche WO2023241931A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022114911.0A DE102022114911A1 (de) 2022-06-14 2022-06-14 Verfahren zum Herstellen von elektronischen Baugruppen und elektronische Baugruppe auf Wafer-Ebene
DE102022114911.0 2022-06-14

Publications (1)

Publication Number Publication Date
WO2023241931A1 true WO2023241931A1 (fr) 2023-12-21

Family

ID=86851784

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/064677 WO2023241931A1 (fr) 2022-06-14 2023-06-01 Procédé de production d'ensembles électroniques et ensemble électronique au niveau d'une tranche

Country Status (2)

Country Link
DE (1) DE102022114911A1 (fr)
WO (1) WO2023241931A1 (fr)

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615972A (en) 1967-04-28 1971-10-26 Dow Chemical Co Expansible thermoplastic polymer particles containing volatile fluid foaming agent and method of foaming the same
EP0343690A2 (fr) 1988-05-27 1989-11-29 Nippon Paint Co., Ltd. Initiateur à chaleur latente de polymérisation cationique et compositions résineuses renfermant le même
EP0542716B1 (fr) 1982-11-22 1997-06-25 Minnesota Mining And Manufacturing Company Compositions polymérisables par apport d'énergie contenant des initiateurs organométalliques
WO2005097883A2 (fr) 2004-03-26 2005-10-20 King Industries, Inc. Procede de production d'un revetement reticule dans la fabrication de circuits integres
WO2012070612A1 (fr) * 2010-11-25 2012-05-31 住友ベークライト株式会社 Procédé de fabrication d'un dispositif électronique, dispositif électronique, procédé de fabrication d'un boîtier de dispositif électronique, boîtier de dispositif électronique, et procédé de fabrication d'un dispositif semi-conducteur
US8486531B2 (en) 2005-09-16 2013-07-16 Matsumoto Yushi-Seiyaku Co., Ltd. Thermally expanded microspheres and a process for producing the same
US20150152260A1 (en) 2012-08-13 2015-06-04 Henkel lP & Holding GmbH Liquid compression modling encapsulants
US20170198093A1 (en) 2014-06-25 2017-07-13 Rensselaer Polytechnic Institute Oxetane polymers and methods of preparation thereof
US9853000B2 (en) 2013-12-03 2017-12-26 Invensas Corporation Warpage reduction in structures with electrical circuitry
US9902829B2 (en) 2012-05-30 2018-02-27 Akzo Nobel Chemicals International B.V. Microspheres
US10211072B2 (en) 2017-06-23 2019-02-19 Applied Materials, Inc. Method of reconstituted substrate formation for advanced packaging applications
US20190139788A1 (en) * 2017-11-03 2019-05-09 Applied Materials, Inc. Apparatus and methods for packaging semiconductor dies
US20200055979A1 (en) 2016-10-17 2020-02-20 Daicel Corporation Sheet-shaped prepreg
US20200321312A1 (en) * 2016-06-01 2020-10-08 Sony Corporation Metal frame, dummy wafer, semiconductor device, electronic device, and method of manufacturing semiconductor device
EP3940764A1 (fr) 2019-03-14 2022-01-19 Mitsui Chemicals Tohcello, Inc. Procédé de fabrication de dispositif électronique
EP3943534A1 (fr) 2020-07-23 2022-01-26 Université de Haute Alsace Utilisation de colorants organiques générant de la chaleur rouge à proche infrarouge pour le retraitement/recyclage de polymères
KR20220012877A (ko) * 2019-05-22 2022-02-04 쇼와덴코머티리얼즈가부시끼가이샤 반도체 장치를 제조하는 방법

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615972A (en) 1967-04-28 1971-10-26 Dow Chemical Co Expansible thermoplastic polymer particles containing volatile fluid foaming agent and method of foaming the same
EP0542716B1 (fr) 1982-11-22 1997-06-25 Minnesota Mining And Manufacturing Company Compositions polymérisables par apport d'énergie contenant des initiateurs organométalliques
EP0343690A2 (fr) 1988-05-27 1989-11-29 Nippon Paint Co., Ltd. Initiateur à chaleur latente de polymérisation cationique et compositions résineuses renfermant le même
WO2005097883A2 (fr) 2004-03-26 2005-10-20 King Industries, Inc. Procede de production d'un revetement reticule dans la fabrication de circuits integres
US8486531B2 (en) 2005-09-16 2013-07-16 Matsumoto Yushi-Seiyaku Co., Ltd. Thermally expanded microspheres and a process for producing the same
WO2012070612A1 (fr) * 2010-11-25 2012-05-31 住友ベークライト株式会社 Procédé de fabrication d'un dispositif électronique, dispositif électronique, procédé de fabrication d'un boîtier de dispositif électronique, boîtier de dispositif électronique, et procédé de fabrication d'un dispositif semi-conducteur
US9902829B2 (en) 2012-05-30 2018-02-27 Akzo Nobel Chemicals International B.V. Microspheres
US20150152260A1 (en) 2012-08-13 2015-06-04 Henkel lP & Holding GmbH Liquid compression modling encapsulants
US9853000B2 (en) 2013-12-03 2017-12-26 Invensas Corporation Warpage reduction in structures with electrical circuitry
US20170198093A1 (en) 2014-06-25 2017-07-13 Rensselaer Polytechnic Institute Oxetane polymers and methods of preparation thereof
US20200321312A1 (en) * 2016-06-01 2020-10-08 Sony Corporation Metal frame, dummy wafer, semiconductor device, electronic device, and method of manufacturing semiconductor device
US20200055979A1 (en) 2016-10-17 2020-02-20 Daicel Corporation Sheet-shaped prepreg
US10211072B2 (en) 2017-06-23 2019-02-19 Applied Materials, Inc. Method of reconstituted substrate formation for advanced packaging applications
US20190139788A1 (en) * 2017-11-03 2019-05-09 Applied Materials, Inc. Apparatus and methods for packaging semiconductor dies
EP3940764A1 (fr) 2019-03-14 2022-01-19 Mitsui Chemicals Tohcello, Inc. Procédé de fabrication de dispositif électronique
KR20220012877A (ko) * 2019-05-22 2022-02-04 쇼와덴코머티리얼즈가부시끼가이샤 반도체 장치를 제조하는 방법
EP3943534A1 (fr) 2020-07-23 2022-01-26 Université de Haute Alsace Utilisation de colorants organiques générant de la chaleur rouge à proche infrarouge pour le retraitement/recyclage de polymères

Also Published As

Publication number Publication date
DE102022114911A1 (de) 2023-12-14

Similar Documents

Publication Publication Date Title
DE112009000140B4 (de) Verfahren zum reversiblen Anbringen eines Vorrichtungswafers an einem Trägersubstrat und ein daraus erhaltener Gegenstand
JP6247148B2 (ja) インクジェット用硬化性組成物及びインクジェット塗布装置
DE3922462C2 (de) Klebstoff
CN109642092B (zh) 可光固定的浇注组合物和使用所述组合物选择性地浇注衬底/部件的方法
JP2012168301A (ja) 金属細線の形成方法及びこれを用いたワイヤグリッド型偏光子の製造方法
US20180243826A1 (en) Three-dimensional modeled-object manufacturing composition and three-dimensional modeled-object manufacturing method
DE102018131513A1 (de) Kationisch härtbare Masse und Verfahren zum Fügen, Vergießen und Beschichten von Substraten unter Verwendung der Masse
JP2015026740A (ja) レジスト材料及びそれを用いたパターン形成方法
EP3707216A1 (fr) Procédé pour la production de revêtements, collages et enrobages opaques ainsi que composition durcissable pour l'utilisation dans le procédé
WO2023241931A1 (fr) Procédé de production d'ensembles électroniques et ensemble électronique au niveau d'une tranche
US20170077055A1 (en) Anisotropic conductive film and production method of the same
US10902973B2 (en) Anisotropic conductive film and production method of the same
JP4617387B2 (ja) 微細構造体の製造方法
JP2013039777A (ja) 透明複合基板の製造方法、透明複合基板および表示素子基板
JP6409281B2 (ja) 異方性導電フィルム及びその製造方法
WO2021112132A1 (fr) Film fonctionnel, composition durcissable de type film, procédé de production de film fonctionnel et procédé de transport d'article
US10849236B2 (en) Anisotropic conductive film and production method of the same
JP6355422B2 (ja) インクジェット用光及び熱硬化性接着剤、電子部品の製造方法及び電子部品
EP3983200B1 (fr) Fabrication additive d'un objet de forme libre constitué de matériaux multicomposants
WO2015119098A1 (fr) Film conducteur anisotrope, et procédé de fabrication de celui-ci
DE102021110210A1 (de) Verfahren zum Herstellen eines optischen Moduls und optisches Modul
DE102022106647A1 (de) Niedertemperaturhärtende Massen auf Basis von Glycidylethern
DE102022102650A1 (de) Kationisch polymerisierbare flammgeschützte Massen
JP2021091855A (ja) 機能性フィルム、フィルム状硬化性組成物及び機能性フィルムの製造方法
DE102022124905A1 (de) Verfahren zur Ummantelung einer Batteriezelle

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23731563

Country of ref document: EP

Kind code of ref document: A1