WO2023236418A1

WO2023236418A1 - Light-emitting diode and light-emitting diode package

Info

Publication number: WO2023236418A1
Application number: PCT/CN2022/127026
Authority: WO
Inventors: 李明; 王思博; 廖汉忠
Original assignee: 淮安澳洋顺昌光电技术有限公司
Priority date: 2022-06-07
Filing date: 2022-10-24
Publication date: 2023-12-14
Also published as: CN115000269A; CN115000269B

Abstract

The present application provides a light-emitting diode (LED) and an LED package. The LED comprises: a substrate and a light-emitting structure layer provided on the substrate, wherein the light-emitting structure layer sequentially comprises an N-type layer, an active layer and a P-type layer, the N-type layer comprises an exposed area which is not covered by the P-type layer and the active layer, and the exposed area comprises several dispersed N steps; a reflection electrode comprising a plurality of sub-reflection electrodes which are dispersedly provided on the upper surface of the P-type layer; a first insulating layer covering the light-emitting structure layer and comprising first openings exposing the N steps and second openings exposing the sub-reflecting electrodes; a first interconnection electrode electrically connected to the N-type layer by means of the first openings; and a second interconnection electrode electrically connected to the reflection electrode by means of the second openings, wherein the first interconnection electrode and the second interconnection electrode are insulated from each other, and the number of sub-reflection electrodes is greater than that of N steps. The light emission efficiency of the LED can be improved.

Description

A kind of light-emitting diode and light-emitting diode package

Cross-references to related applications

This application claims priority to the Chinese patent application with application number 202210641669.3 and titled "A light-emitting diode and a light-emitting diode package" submitted to the State Intellectual Property Office of China on June 7, 2022, the entire content of which is incorporated by reference. in this application.

Technical field

The present application relates to the field of semiconductor technology, specifically, to a light-emitting diode and a light-emitting diode package.

Background technique

Light Emitting Diode (LED, Light Emitting Diode) is a commonly used light-emitting device that emits energy by releasing energy through the recombination of electrons and holes. It is widely used in various fields that require light sources. However, due to the absorption of light by the reflective materials in the LED's substrate layer, electrode barrier layer, and reflective layer, the light extraction efficiency of the LED is low. According to calculations in the literature, only 4% of the light in the LED can be emitted, and 96% of the light returns to the inside of the LED and is finally converted into heat after total reflection, material absorption, etc.

Contents of the invention

In view of this, the purpose of this application is to provide a light-emitting diode and a light-emitting diode package to improve the light extraction efficiency of the LED.

In a first aspect, embodiments of the present application provide a light-emitting diode, including:

A substrate, and a light-emitting structure layer provided on the substrate, the light-emitting structure layer sequentially includes an N-type layer, an active layer and a P-type layer; the N-type layer includes the P-type layer and The exposed area covered by the active layer, the exposed area includes several scattered N steps;

A reflective electrode including a plurality of sub-reflective electrodes dispersedly provided on the upper surface of the P-type layer;

A first insulating layer covering the light-emitting structure layer and including a first opening exposing the N steps and a second opening exposing the sub-reflective electrode;

A first interconnection electrode is electrically connected to the N-type layer through the first opening;

A second interconnection electrode is electrically connected to the reflective electrode through the second opening, and the first interconnection electrode is insulated from the second interconnection electrode;

The number of the sub-reflective electrodes is greater than the number of the N steps.

Combined with the first aspect, embodiments of the present application provide a first possible implementation of the first aspect, wherein the sub-reflective electrodes are columnar structures arranged in an array;

An Ag column structure is preferred.

Combined with the first aspect, embodiments of the present application provide a second possible implementation of the first aspect, wherein the sub-reflective electrode includes an Ag pillar layer, a first high Mohs hardness metal sub-layer, a first low Mohs hardness metal sub-layer, A hardness metal sub-layer and a second highest Mohs hardness metal sub-layer.

Combined with the first possible implementation manner of the first aspect, the embodiment of the present application provides a third possible implementation manner of the first aspect, wherein the height of the Ag pillar layer is 1-2um.

Combined with the first aspect, embodiments of the present application provide a fourth possible implementation of the first aspect, wherein the radius of the sub-reflective layer is 5um-30um, and the distance between two adjacent sub-reflective layers is 20um-100um.

Combined with the first aspect, embodiments of the present application provide a fifth possible implementation of the first aspect, wherein the first insulating layer is a DBR reflective layer; the second interconnection electrode includes an adhesion layer, a metal reflective layer layer, the reflective electrode, DBR reflective layer, and second interconnection electrode form multiple reflections on the light emitted from the active layer.

In combination with the fifth possible implementation manner of the first aspect, embodiments of the present application provide a sixth possible implementation manner of the first aspect, wherein the material of the adhesion layer includes: one of Ti, Cr, and Ni One or more species, with a thickness of

In conjunction with the first aspect, embodiments of the present application provide a seventh possible implementation manner of the first aspect, wherein the light-emitting diode further includes electrical components that are electrically connected to the first interconnection electrode and the second interconnection electrode respectively. The first pad electrode and the second pad electrode are connected, and the first pad electrode and the second pad electrode are electrically insulated.

Combined with the first aspect, embodiments of the present application provide an eighth possible implementation manner of the first aspect, wherein the number of sub-reflective electrodes is more than twice the number of N steps.

Combined with the first aspect, embodiments of the present application provide a ninth possible implementation manner of the first aspect, wherein the number of N steps distributed around the light-emitting diode is greater than the number of N steps located inside the light-emitting diode.

In a second aspect, embodiments of the present application also provide a light-emitting diode, including:

A substrate, a light-emitting structure layer provided on the substrate, the light-emitting structure layer sequentially includes an N-type layer, an active layer and a P-type layer, the N-type layer includes the P-type layer and the active layer. The exposed area covered by the layer includes several dispersed N steps;

A transparent electrode, arranged on the P-type layer, has a current expansion function;

A reflective electrode, including a plurality of Ag pillar structures dispersedly arranged on the transparent electrode;

A DBR reflective layer covers the light-emitting structure layer and includes a first opening exposing the N steps and a second opening exposing the sub-reflective electrode;

a first pad electrode electrically connected to the first interconnection electrode;

A second pad electrode is electrically connected to the second interconnection electrode; the first pad electrode and the second pad electrode are electrically insulated;

The Ag pillar structure, DBR reflective layer, and second interconnection electrode form multiple reflections on the light emitted from the active layer.

Combined with the second aspect, the embodiment of the present application provides a first possible implementation of the second aspect, wherein the Ag pillar structure is distributed in a dense honeycomb array, and the radius of the Ag pillar structure is 5um-30um, The spacing between two adjacent Ag pillar structures is 20um-100um.

Combined with the second aspect, embodiments of the present application provide a second possible implementation of the second aspect, wherein an upper insulating layer is provided between the first pad electrode and the second pad electrode, including a first pad opening and a second pad opening, a first pad electrode passing through the first pad opening to be electrically connected to the first interconnection electrode, and a second pad electrode passing through the second pad opening electrically connected to the second interconnection electrode.

In conjunction with the second possible implementation manner of the second aspect, embodiments of the present application provide a third possible implementation manner of the second aspect, wherein the connection between the second pad electrode and the second interconnection electrode A third interconnection electrode is also provided, and the second pad electrode is electrically connected to the third interconnection electrode.

In a third aspect, embodiments of the present application also provide a light-emitting diode package, including:

a package body having a mounting surface;

An LED chip mounted on the mounting surface, the LED chip being configured to emit light in a certain wavelength range as shown in any of the above;

A phosphor, covering the LED chip, is configured to convert light emitted by the LED chip to light of another wavelength.

In the light-emitting diode and light-emitting diode package provided by embodiments of the present application, the light-emitting diode includes: a substrate, and a light-emitting structure layer provided on the substrate. The light-emitting structure layer sequentially includes an N-type layer, an active layer and P-type layer; the N-type layer includes an exposed area that is not covered by the P-type layer and the active layer, and the exposed area includes a plurality of dispersed N steps; a reflective electrode including one dispersedly provided on the P-type layer. A plurality of sub-reflective electrodes on the upper surface of the type layer; a first insulating layer covering the light-emitting structure layer and including a first opening exposing the N steps and a second opening exposing the sub-reflective electrode; a first interconnection electrode , is electrically connected to the N-type layer through the first opening; the second interconnection electrode is electrically connected to the reflective electrode through the second opening, and the first interconnection electrode is electrically connected to the second The interconnection electrodes are insulated; the number of the sub-reflective electrodes is greater than the number of the N steps. In this way, by dispersing a plurality of sub-reflective electrodes disposed on the upper surface of the P-type layer, and the number of sub-reflective electrodes is greater than the number of N steps, the reflective surface in the LED changes, changing the reflection angle and refraction angle of light, Thereby changing the critical angle of the emitted light, allowing more light to emit into the air, and effectively improving the light emitting efficiency of the LED.

In order to make the above-mentioned objects, features and advantages of the present application more obvious and understandable, preferred embodiments are given below and described in detail with reference to the attached drawings.

Description of the drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application and therefore do not It should be regarded as a limitation of the scope. For those of ordinary skill in the art, other relevant drawings can be obtained based on these drawings without exerting creative efforts.

Figure 1 shows a schematic front structural view of N steps formed on the light-emitting structure layer provided by Embodiment 1 of the present application;

Figure 2 shows a schematic top view of the structure of N steps formed on the light-emitting structure layer provided by Embodiment 1 of the present application;

Figure 3 shows a schematic front structural view of the light-emitting structural layer and the transparent electrode provided in Embodiment 1 of the present application;

Figure 4 shows a schematic top view of the structure of the light-emitting structure layer and the transparent electrode provided in Embodiment 1 of the present application;

Figure 5 shows a schematic front structural view of the silver pillar array provided in Embodiment 1 of the present application;

Figure 6 shows a schematic top view of the silver pillar array provided in Embodiment 1 of the present application;

Figure 7 shows a schematic front structural view of the silver pillar and DBR hole array provided in Embodiment 1 of the present application;

Figure 8 shows a schematic top view of the silver pillar and DBR hole array provided in Embodiment 1 of the present application;

Figure 9 shows a schematic front structural view of the second interconnection electrode provided in Embodiment 1 of the present application;

Figure 10 shows a schematic front structural view of the fourth opening provided in Embodiment 1 of the present application;

Figure 11 shows a schematic top structural view of the fourth opening provided in Embodiment 1 of the present application;

Figure 12 shows a schematic front structural view of the fifth opening provided in Embodiment 1 of the present application;

Figure 13 shows a schematic top structural view of the fifth opening provided in Embodiment 1 of the present application;

Figure 14 shows a schematic front structural view of the pad opening provided in Embodiment 1 of the present application;

Figure 15 shows a schematic top structural view of the pad opening provided in Embodiment 1 of the present application;

Figure 16 shows a schematic front structural view of the light-emitting diode provided in Embodiment 1 of the present application;

Figure 17 shows a schematic top structural view of the light-emitting diode provided in Embodiment 1 of the present application;

Figure 18 shows a schematic front structural view of the gap provided in Embodiment 2 of the present application;

Figure 19 shows a schematic top structural view of the gap provided by Embodiment 2 of the present application;

Figure 20 shows a schematic front structural view of the pad opening provided in Embodiment 2 of the present application;

Figure 21 shows a schematic top structural view of the pad opening provided in Embodiment 2 of the present application;

Figure 22 shows a schematic front structural view of the light-emitting diode provided in Embodiment 2 of the present application;

Figure 23 shows a schematic diagram of the light emission of an existing light-emitting diode;

Figure 24 shows a schematic diagram of the light emitting diode provided by the embodiment of the present application.

References: 100: substrate; 200: light-emitting structure layer; 210: N-type layer; 220: active layer; 230: P-type layer; 211, 212: N steps; 300: transparent electrode; 400: reflective electrode; 420: sub-reflective electrode; 500: first insulating layer; 510: first opening; 520: second opening; 610: first interconnection electrode; 620: second interconnection electrode; 630: third interconnection electrode; 700 : second insulating layer; 710: third opening; 720: fourth opening; 721: fifth opening; 730: gap (between the first interconnection electrode and the third interconnection electrode); 800: upper insulating layer; 810 : first pad opening; 820: second pad opening; 910: first pad electrode; 920: second pad electrode.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only These are part of the embodiments of this application, but not all of them. The components of the embodiments of the present application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the appended drawings is not intended to limit the scope of the claimed application, but rather to represent selected embodiments of the application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without any creative work shall fall within the scope of protection of this application.

The embodiments of the present application provide a light-emitting diode and a light-emitting diode package, which are described below through embodiments.

Embodiment 1

As shown in Figures 1 to 17, the light-emitting diode includes:

The substrate 100, and the light-emitting structure layer 200 disposed on the substrate 100, the light-emitting structure layer 200 sequentially includes an N-type layer 210, an active layer 220 and a P-type layer 230; the N-type layer 210 includes a P-type layer 230 And the exposed area covered by the active layer 220, the exposed area includes several scattered N steps 211, 212, as shown in Figure 1-2;

The transparent electrode 300, as shown in Figure 3-4, is disposed on the P-type layer 230 and exposes the N steps 211 and 212; the transparent electrode 300 is an indium tin metal oxide (ITO, Indium Tin Oxides) layer.

The reflective electrode 400, as shown in Figure 5-6, includes a plurality of sub-reflective electrodes 420 dispersedly arranged on the upper surface of the P-type layer 230;

The first insulating layer 500, as shown in Figures 7-8, covers the light-emitting structure layer 200 and includes a first opening 510 exposing the N steps and a second opening 520 exposing the sub-reflective electrode 420;

The second interconnection electrode 620, as shown in FIG. 9, covers the P-type layer 230 and is electrically connected to a plurality of sub-reflective electrodes of the reflective electrode 400 through the second opening 520. The first interconnection electrode 610 is connected to the second interconnection electrode 610. The electrode 620 is insulated;

The first interconnection electrode 610, as shown in FIG. 12, is electrically connected to the N-type layer 210 through the first opening 510;

The first interconnection electrode is insulated from the second interconnection electrode. Specifically, as shown in FIG. 10 and FIG. 11 , the first interconnection electrode is insulated by the second insulating layer 700 . The second insulating layer 700 covers the second interconnection electrode 620 and includes a third opening 710 exposing the N steps, and a plurality of fourth openings 720 exposing part of the second interconnection electrode 620 .

The first interconnection electrode 610 is electrically connected to the N-type layer 220 through the third opening 710, and is provided with a fifth opening 721 (shown in FIG. 13, black area) exposing the fourth opening 720.

In the embodiment of this application, as an optional embodiment, the sub-reflective electrode is a columnar structure arranged in an array;

An Ag column structure is preferred.

In the embodiment of this application, in order to effectively reduce the film stress of the array Ag pillar structure and ensure that the Ag pillar structure obtains better reflection characteristics and adhesion, as an optional embodiment, the sub-reflective electrode It includes an Ag pillar layer, a first high Mohs hardness metal sub-layer, a first low Mohs hardness metal sub-layer and a second high Mohs hardness metal sub-layer. The Ag pillar layer has a single-layer structure, and the first high Mohs hardness metal sub-layer, the first low Mohs hardness metal sub-layer and the second high Mohs hardness metal sub-layer can have a single layer or multi-layer structure.

In the embodiments of this application, metals with high Mohs hardness include, but are not limited to, Ti, Pt, Ni, and Cr, and metals with low Mohs hardness include, but are not limited to, Al and Au.

In the embodiment of this application, as an optional embodiment, the sub-reflective electrode includes but is not limited to the following structure:

The first structure of the sub-reflective electrode: Ag/Ti/Pt/Ti/Pt/Al/Ti/Al/Ti/Pt;

The second structure of the sub-reflective electrode: Ag/Ni/Pt/Ni/Pt/Al/Ti/Al/Ti/Pt;

The third structure of the sub-reflective electrode: Ag/Ti/Pt/Ti/Pt/Au/Ti/Pt;

The fourth structure of the sub-reflective electrode: Ag/Ni/Pt/Ni/Pt/Au/Ti/Pt;

The fifth structure of the sub-reflective electrode: Ag/Cr/Pt/Cr/Pt/Al/Ti/Al/Ti/Pt.

In the embodiment of this application, low Mohs hardness metals Al and Au are used to form trapezoidal Ag pillars in a wrapping and covering manner, and Pt is used as the last protective layer to protect the Ag pillars and perform side reflection.

In the embodiment of this application, as an optional embodiment, the height of the Ag pillar layer is 1-2um. Ag pillars can be obtained by deposition using electron beam evaporation or sputtering.

In the embodiment of this application, as an optional embodiment, the radius of the sub-reflective electrode is 5um-30um, and the distance between two adjacent sub-reflective electrodes is 20um-100um.

In the embodiment of this application, as an optional embodiment, the first insulating layer 500 is a DBR reflective layer; the second interconnection electrode 620 includes an adhesion layer, a metal reflective layer, the reflective electrode 400, the DBR reflective layer, and the second interconnection layer. The electrode 620 forms multiple reflections of the light emitted from the active layer 220 .

In the embodiment of the present application, as an optional embodiment, the material of the adhesion layer is a metal element located between indium tin metal and silver metal in the periodic table of elements, including: one of Ti, Cr, Ni or Various, thickness is

In the embodiment of the present application, as an optional embodiment, the light-emitting diode further includes a first pad electrode 910 and a second pad electrode that are electrically connected to the first interconnection electrode 610 and the second interconnection electrode 620 respectively. 920. The first pad electrode 910 and the second pad electrode 920 are electrically insulated.

In the embodiment of the present application, as an optional embodiment, the number of the sub-reflective electrodes is more than twice the number of the N steps.

In the embodiment of the present application, as an optional embodiment, the number of N steps distributed around the light-emitting diode is greater than the number of them located inside the light-emitting diode.

In the embodiment of this application, as yet another optional embodiment, the light-emitting diode further includes:

The upper insulating layer 800, as shown in Figures 14 and 15, covers the light emitting structure 200 and includes a first pad opening 810 and a second pad opening 820; as shown in Figures 16 and 17, the first pad electrode 910 The first pad opening 810 is electrically connected to the first interconnection electrode 610 , and the second pad electrode 920 is electrically connected to the second interconnection electrode 620 through the second pad opening 820 .

Embodiment 2

As shown in Figures 18 to 22, another light-emitting diode provided by the present invention also includes:

Substrate 100, a light-emitting structure layer 200 provided on the substrate 100. The light-emitting structure layer 200 includes an N-type layer 210, an active layer 220 and a P-type layer 230 in sequence. The N-type layer 210 includes a non-P-type layer 230 and an active layer 230. The exposed area covered by the source layer 220 includes several dispersed N steps;

The transparent electrode 300 is provided on the P-type layer 230 and has a current spreading function;

The reflective electrode 400 includes a plurality of Ag pillar structures dispersedly arranged on the transparent electrode 300;

The first insulating layer 500 is a DBR reflective layer, covers the light-emitting structure layer 200, and includes a first opening 510 exposing the N steps and a second opening 520 exposing the sub-reflective electrode;

The first interconnection electrode 610 is electrically connected to the N-type layer 210 through the first opening 510;

The second interconnection electrode 620 is electrically connected to the reflective electrode 400 through the second opening 520, and the first interconnection electrode 610 and the second interconnection electrode 620 are insulated;

The first pad electrode 910 is electrically connected to the first interconnection electrode 610;

The second pad electrode 920 is electrically connected to the second interconnection electrode 620; the first pad electrode 810 and the second pad electrode 820 are electrically insulated;

An upper insulating layer 800 is disposed between the first pad electrode 910 and the second pad electrode 920 and includes a first pad opening 810 and a second pad opening 820. The first pad electrode 910 passes through the first pad. The opening 810 is electrically connected to the first interconnection electrode 610 , and the second pad electrode 920 passes through the second pad opening 820 and is electrically connected to the second interconnection electrode 620 .

The Ag pillar structure, DBR reflective layer, and second interconnection electrode 620 form multiple reflections on the light emitted from the active layer 220 .

In the embodiment of this application, as an optional embodiment, the Ag pillar structure is distributed in a dense honeycomb array, the radius of the Ag pillar structure is 5um-30um, and the spacing between two adjacent Ag pillar structures is 20um- 100um.

In the embodiment of the present application, the sub-reflective electrode is set as an array of silver pillars (Ag), and a high-reflectivity metal is used as a side reflective layer to wrap and protect the Ag pillars to form a roughened DBR structure, thereby changing the structure of the LED. The reflective surface effectively changes the reflection angle and refraction angle of light, thereby changing the critical angle of the emitted light, allowing more light to emit into the air, thereby improving the light emitting efficiency of the LED; at the same time, the structure of the Ag column array, It can provide multi-path connection of current, thereby providing better current expansion performance and heat dissipation performance, so that the LED also has excellent current expansion performance, thereby improving the current expansion and heat dissipation capabilities of the LED.

Another structural difference between the embodiment of the present application and Embodiment 1 is that a third interconnection electrode 630 is further provided between the second pad electrode 920 and the second interconnection electrode 620. Interconnect electrodes 630 are electrically connected. In view of the description of the different technologies in conjunction with the accompanying drawings, the corresponding structural schematic diagrams and preparation methods of Figures 1 to 11 in Embodiment 1 are also applicable to this embodiment:

On the basis of the light emitting diode structure shown in Figure 11, a first interconnection electrode 610 and a third interconnection electrode 630 are deposited. As shown in Figures 18 and 19, the first interconnection electrode 610 is connected to the N-type through the third opening 710. The layer 220 is electrically connected, the third interconnection electrode 630 is connected to the second interconnection electrode through the fourth opening 720, and the first interconnection electrode 610 and the third interconnection electrode 630 are connected to each other through the gap 730 (gray area in Figure 19). Spaced insulation.

Next, an upper insulating layer 800 is deposited as shown in FIGS. 20 and 21 . The upper insulating layer 800 covers the light emitting structure 200 and includes a first pad opening 810 exposing the first interconnection electrode and a second pad exposing the third interconnection electrode. Opening 820; as shown in FIG. 22, the first pad electrode 910 is connected to the first interconnection electrode 610 through the first pad opening 810, and the second pad electrode 920 is connected to the third interconnection through the second pad opening 920. The electrode 630 is electrically connected.

As shown in Figure 23 and Figure 24, in Figure 23, light is emitted from the Multi Quantum Well (MQW, Multi Quantum Well), passes through the GaN layer, and is reflected at the DBR layer interface. Figure 24 is roughened due to the presence of Ag pillars. The interface of the DBR layer changes the reflection surface of light and forms an Omni Directional Reflector (ODR) structure, so that part of the light emitted from the light-emitting area changes the reflection angle at the interface between the DBR layer and the Ag pillar, thereby changing the refraction angle of the light. This causes the critical angle of the emitted light to change, causing more of the emitted light to fail to meet the conditions of total reflection at the interface between sapphire and GaN, and thus emit into the air, thereby improving the light extraction efficiency of the LED.

Embodiment 3

The light-emitting diode package provided by the embodiment of the present application includes:

a package body having a mounting surface;

An LED chip mounted on the mounting surface, the LED chip being configured to emit light within a certain range of wavelengths as shown in any of the above;

It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need further definition and explanation in subsequent drawings. In addition, the terms "first", "second", "third", etc. are only used to distinguish descriptions and shall not be understood as indicating or implying relative importance.

Finally, it should be noted that the above-mentioned embodiments are only specific implementation modes of the present application, and are used to illustrate the technical solutions of the present application, but not to limit them. The protection scope of the present application is not limited thereto. Although refer to the foregoing The embodiments describe the present application in detail. Those of ordinary skill in the art should understand that any person familiar with the technical field can still modify the technical solutions recorded in the foregoing embodiments within the technical scope disclosed in the present application. It is possible to easily think of changes or equivalent substitutions of some of the technical features; however, these modifications, changes or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application. All are covered by the protection scope of this application. Therefore, the protection scope of this application should be determined by the protection scope of the claims.

Claims

A light-emitting diode, characterized by including:

A substrate, and a light-emitting structure layer provided on the substrate, the light-emitting structure layer sequentially includes an N-type layer, an active layer and a P-type layer; the N-type layer includes the P-type layer and The exposed area covered by the active layer, the exposed area includes several scattered N steps;

A reflective electrode, including a plurality of sub-reflective electrodes dispersedly provided on the upper surface of the P-type layer;

A first insulating layer covering the light-emitting structure layer and including a first opening exposing the N steps and a second opening exposing the sub-reflective electrode;

A first interconnection electrode is electrically connected to the N-type layer through the first opening;

A second interconnection electrode is electrically connected to the reflective electrode through the second opening, and the first interconnection electrode is insulated from the second interconnection electrode;

The number of the sub-reflective electrodes is greater than the number of the N steps.
The light-emitting diode according to claim 1, wherein the sub-reflective electrode is a columnar structure arranged in an array;

An Ag column structure is preferred.
The light-emitting diode according to claim 1, wherein the sub-reflective electrode includes an Ag pillar layer, a first high Mohs hardness metal sub-layer, a first low Mohs hardness metal sub-layer and a second high Mohs hardness metal sub-layer. Metal sublayer.
The light-emitting diode according to claim 2, wherein the height of the Ag pillar layer is 1-2um.
The light-emitting diode according to claim 1, wherein the radius of the sub-reflective layer is 5um-30um, and the distance between two adjacent sub-reflective layers is 20um-100um.
The light-emitting diode according to claim 1, wherein the first insulating layer is a DBR reflective layer; the second interconnection electrode includes an adhesion layer and a metal reflective layer, and the reflective electrode, DBR reflective layer, The second interconnection electrode forms multiple reflections of light emitted from the active layer.
The light-emitting diode according to claim 6, characterized in that the material of the adhesion layer includes: one or more of Ti, Cr, and Ni, with a thickness of
The light-emitting diode according to claim 1, wherein the light-emitting diode further includes a first pad electrode and a second pad electrode electrically connected to the first interconnection electrode and the second interconnection electrode respectively. pad electrode, the first pad electrode and the second pad electrode are electrically insulated.
The light-emitting diode according to claim 1, wherein the number of the sub-reflective electrodes is more than twice the number of the N steps.
The light-emitting diode according to claim 1, wherein the number of N steps distributed around the light-emitting diode is greater than the number inside the light-emitting diode.
A light-emitting diode, including:

A substrate, a light-emitting structure layer provided on the substrate, the light-emitting structure layer sequentially includes an N-type layer, an active layer and a P-type layer, the N-type layer includes the P-type layer and the active layer. The exposed area covered by the layer includes several dispersed N steps;

A transparent electrode, arranged on the P-type layer, has a current expansion function;

A reflective electrode, including a plurality of Ag pillar structures dispersedly arranged on the transparent electrode;

A DBR reflective layer covers the light-emitting structure layer and includes a first opening exposing the N steps and a second opening exposing the sub-reflective electrode;

A first interconnection electrode is electrically connected to the N-type layer through the first opening;

A second interconnection electrode is electrically connected to the reflective electrode through the second opening, and the first interconnection electrode is insulated from the second interconnection electrode;

a first pad electrode electrically connected to the first interconnection electrode;

A second pad electrode is electrically connected to the second interconnection electrode; the first pad electrode and the second pad electrode are electrically insulated;

The Ag pillar structure, DBR reflective layer, and second interconnection electrode form multiple reflections on the light emitted from the active layer.
The light-emitting diode according to claim 11, characterized in that the Ag pillar structure is distributed in a dense honeycomb array, the radius of the Ag pillar structure is 5um-30um, and the distance between two adjacent Ag pillar structures is 20um. -100um.
The light-emitting diode of claim 11, wherein an upper insulating layer is disposed between the first pad electrode and the second pad electrode, including a first pad opening and a second pad opening. , the first pad electrode passes through the first pad opening and is electrically connected to the first interconnection electrode, and the second pad electrode passes through the second pad opening and is electrically connected to the second interconnection electrode .
The light-emitting diode of claim 13, wherein a third interconnection electrode is further provided between the second pad electrode and the second interconnection electrode, and the second pad electrode and the second interconnection electrode are The third interconnection electrode is electrically connected.
A light-emitting diode package, including:

a package body having a mounting surface;

An LED chip is mounted on the mounting surface, the LED chip being configured to emit light in a certain wavelength range as shown in any one of claims 1 to 13;

A phosphor, covering the LED chip, is configured to convert light emitted by the LED chip to light of another wavelength.