WO2023231153A1 - Filtre passe-bas passif et circuit de filtre passe-bas - Google Patents

Filtre passe-bas passif et circuit de filtre passe-bas Download PDF

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Publication number
WO2023231153A1
WO2023231153A1 PCT/CN2022/105753 CN2022105753W WO2023231153A1 WO 2023231153 A1 WO2023231153 A1 WO 2023231153A1 CN 2022105753 W CN2022105753 W CN 2022105753W WO 2023231153 A1 WO2023231153 A1 WO 2023231153A1
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WO
WIPO (PCT)
Prior art keywords
radio frequency
module
pass filter
capacitor
inductor
Prior art date
Application number
PCT/CN2022/105753
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English (en)
Chinese (zh)
Inventor
徐鹏飞
王智会
李秀山
张玲玲
钟伦威
Original Assignee
深圳振华富电子有限公司
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Publication of WO2023231153A1 publication Critical patent/WO2023231153A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors

Definitions

  • the present application belongs to the field of filtering electronic technology, and in particular relates to a passive low-pass filter and a low-pass filter circuit.
  • low-pass filters are used in the RF front-end receiver to suppress image frequencies, local oscillator frequencies, and harmonics.
  • the traditional filter has the problem that the wide passband and steep frequency cutoff characteristics of the filter circuit cannot meet the needs, and the miniaturization of the low-pass filter is not enough.
  • This application provides a passive low-pass filter and a low-pass filter circuit, aiming to solve the problems that the wide-band passband and frequency cutoff characteristics of the traditional low-pass filter cannot meet the needs and the size is not sufficiently miniaturized.
  • the first aspect of the embodiment of the present application provides a passive low-pass filter, including:
  • a radio frequency input module is used to access radio frequency signals, mix and process the radio frequency signals, and output a first radio frequency signal
  • a first resonance module coupled to the radio frequency input module, is used to adjust the frequency of the first radio frequency signal to output a second radio frequency signal with a preset passband frequency;
  • a first attenuation module coupled to the first resonance module, used to attenuate the clutter signal in the second radio frequency signal
  • a plurality of second resonant modules connected in series, coupled with the first resonant module, used to adjust the frequency of the second radio frequency signal;
  • each second attenuation module is coupled to a common node between adjacent second resonant modules, and the second end of each second attenuation module is grounded , used to attenuate the clutter signal in the second radio frequency signal and generate a third radio frequency signal;
  • a radio frequency output module is connected to the plurality of second resonance modules connected in series and is used to output the third radio frequency signal.
  • the first resonant module includes a first inductor and a first capacitor, and the first end of the first inductor and the first end of the first capacitor are commonly connected to the radio frequency input module, The second end of the first inductor and the second end of the first inductor are commonly connected to the second resonant module.
  • each of the second resonant modules includes a second inductor and a second capacitor, and the second inductor is connected in parallel with the second capacitor.
  • the first attenuation module includes at least one capacitor, a first end of the at least one capacitor is connected to the first resonant module, and a second end of the at least one capacitor is connected to ground.
  • the first inductor and the second inductor are spiral inductors or rectangular inductors.
  • the structure of the first capacitor and the second capacitor is a metal-dielectric-metal structure.
  • the passive low-pass filter further includes a substrate layer and a grounded metal layer;
  • first resonant module and the second resonant module are formed on the substrate layer, and the first attenuation module and the second attenuation module are connected to the ground metal layer through a through-hole structure.
  • the substrate layer material is gallium arsenide material, and the thickness of the substrate layer is 100 ⁇ 5 ⁇ m.
  • the radio frequency input module and the radio frequency output module are both coplanar port structures.
  • a second aspect of the embodiment of the present application provides a low-pass filter circuit, including the passive low-pass filter as described in any one of the above.
  • the above-mentioned low-pass filter circuit includes a radio frequency input module, a first resonance module, a first attenuation module, a plurality of second resonance modules connected in series, a plurality of second attenuation modules and a radio frequency output module.
  • the radio frequency input module is used to access the radio frequency signal and output the first radio frequency signal
  • the first resonance module is used to output the second radio frequency signal with a preset passband frequency
  • the first attenuation module is used to attenuate the impurities in the second radio frequency signal.
  • the embodiments of the present application can solve the problems that the wide-band passband and frequency cutoff characteristics of the traditional low-pass filter cannot meet the needs and the size is insufficiently miniaturized.
  • the main inventive concept of the present application is to set the first attenuation module and the second attenuation module. It can effectively attenuate the clutter signal in the radio frequency signal. By setting the first resonant module and the second resonant module, the frequency of the radio frequency signal can be adjusted. This operation can effectively avoid the wide-band pass of the filter circuit in the traditional filter. The band and steep frequency cutoff characteristics cannot meet the needs, as well as the problem of insufficient miniaturization of the low-pass filter.
  • Figure 1 is a schematic diagram of the principle of a passive low-pass filter provided by an embodiment of the present application
  • Figure 2 is an equivalent circuit diagram of a passive low-pass filter provided by an embodiment of the present application.
  • Figure 3 is an equivalent circuit diagram of another passive low-pass filter provided by an embodiment of the present application.
  • Figure 4 is a schematic structural diagram of another passive low-pass filter provided by an embodiment of the present application.
  • Figure 5 is a schematic diagram of parameter test curves of the input port return loss S11 and the output port return loss S22 of a low-pass filter with a passband frequency of 0.5 GHz provided by an embodiment of the present application;
  • Figure 6 is a schematic diagram of the stopband suppression S21 parameter test curve of a low-pass filter with a passband frequency of 0.5 GHz provided by an embodiment of the present application.
  • Radio frequency input module 101. Radio frequency input module; 102. Radio frequency output module; 103. First resonance module; 104. Multiple second resonance modules; 105. First attenuation module; 106. Multiple second attenuation modules.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, features defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • plurality means two or more than two, unless otherwise explicitly and specifically limited.
  • RF passive components can be fabricated through a variety of processes, such as low temperature co-fired ceramics.
  • ceramic (LTCC) technology embeds passive components into multilayer substrates.
  • the LTCC process is widely used because of its excellent electrical and mechanical properties.
  • Most traditional low-pass filters are made using the LTCC process.
  • the size of the ceramic substrate using the LTCC process has encountered a bottleneck on the road to miniaturization.
  • the IPD semiconductor process can manufacture thinner line widths, high-density capacitors, high-quality factor (Q-factor) inductors and high-quality Precision inductors can use thin film integrated passive device technology to integrate various passive devices, which has far-reaching significance for achieving high integration and high performance in communication systems.
  • system integration technologies such as system-in-a-package (SiP) are applied in RF systems. widely.
  • the low-pass filter is an electronic filter device that allows signals below the cutoff frequency to pass but cannot pass signals above the cutoff frequency.
  • the Q value of the inductor also called the quality factor of the inductor, is the main parameter to measure the inductor device.
  • the inductor Q value refers to the ratio of the inductive reactance and its equivalent loss resistance when the inductor operates under an AC voltage of a certain frequency. The higher the Q value of an inductor, the smaller its losses and the higher its efficiency.
  • the first aspect of the embodiment of the present application provides a schematic diagram of the principle of a passive low-pass filter. For convenience of explanation, only the parts related to this embodiment are shown.
  • the passive low-pass filter in the embodiment of the present application includes: a radio frequency input module 101, a first resonant module 103, a first attenuation module 105, a plurality of second resonant modules 104, and a plurality of second attenuation modules. 106 and RF output module 102.
  • the radio frequency input module 101 is used to access radio frequency signals, mix and process the radio frequency signals, and output the first radio frequency signal.
  • the first resonance module 103 is coupled to the radio frequency input module 101 and is used to process the first radio frequency signal.
  • the frequency of the signal is adjusted to output a second radio frequency signal with a preset passband frequency;
  • the first attenuation module 105 is coupled to the first resonance module 103 for attenuating the clutter signal in the second radio frequency signal; a plurality of series-connected
  • the second resonant module 104 is coupled to the first resonant module 103 for adjusting the frequency of the second radio frequency signal;
  • the first end of each second attenuation module 106 is coupled to the common ground between adjacent second resonant modules 104 node, the second end of each second attenuation module 106 is grounded, used to attenuate the clutter signal in the second radio frequency signal to generate a third radio frequency signal;
  • the radio frequency output module is connected to multiple second resonance modules 104 connected in
  • the accessed radio frequency signal may include interference frequencies of various amplitudes.
  • the first attenuation module 105 will perform shunt processing on the radio frequency signal. , the first attenuation module 105 will adjust the noise signal of the second radio frequency signal output by the first resonance module 103 to quickly attenuate the noise signal at the cut-off frequency at the pole.
  • the second radio frequency signal directly enters a plurality of second resonant modules 104, wherein the plurality of second resonant modules 104 are coupled to the first resonant module 103, and the plurality of second resonant modules 104 are used to adjust the second radio frequency signal.
  • the first ends of the plurality of second attenuation modules 106 are coupled to a common node between adjacent second resonant modules 104 , and the second end of each second attenuation module 106 is connected to ground, for adjusting the frequency at the cut-off frequency.
  • the radio frequency output module 102 is configured to output the third radio frequency signal to the coplanar port.
  • the radio frequency input module 101 includes a radio frequency (RF) interface.
  • the radio frequency signal accessed by the radio frequency interface can be one or more of digital analog signals, audio signals, and video signals, and the corresponding signals are mixed.
  • the process outputs a signal frequency that meets a preset value.
  • the radio frequency interface is connected to a digital analog signal, and a stable digital analog signal is output through mixed processing at the radio frequency interface, and triggers the subsequent module to implement the corresponding function.
  • the radio frequency input module 101 can also be provided with multiple other wireless interfaces, and the radio frequency interfaces can also be replaced accordingly according to the needs of the device to implement corresponding functions.
  • the specific interface type and model are not limited.
  • the first resonance module 103 includes at least any one of an inductive component or a capacitive component.
  • the first resonant module 103 includes a first inductor L1 and a first capacitor C1.
  • the first end of the first inductor L1 and the first end of the first capacitor C1 are commonly connected to the radio frequency input.
  • the second end of the first inductor L1 and the second end of the first inductor L1 are commonly connected to the second resonant module 104 .
  • one of the second resonant modules 104 includes a second inductor L2 and a second capacitor C2, and the second inductor L2 and the second capacitor C2 are connected in parallel.
  • the plurality of second resonant modules 104 include a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4, a first capacitor C1, a second capacitor C2, a third capacitor C3 and a fourth capacitor C4, where the inductor and capacitors are connected respectively.
  • the first end of the first capacitor C1 is connected to the RF input module 101
  • the second end of the first capacitor C1 is connected to the first end of the second capacitor C2
  • the second end of the second capacitor C2 The first end of the third capacitor C3 is connected to the first end of the third capacitor C3.
  • the second end of the third capacitor C3 is connected to the first end of the fourth capacitor C4.
  • the second end of the fourth capacitor C4 is connected to the radio frequency output module 102.
  • the first inductor L1 is connected to the first end of the third capacitor C3.
  • the first capacitor C1 is connected in parallel, the second inductor L2 and the second capacitor C2 are connected in parallel, the third inductor L3 and the third capacitor C3 are connected in parallel, and the fourth inductor L4 and the fourth capacitor C4 are connected in parallel.
  • the first attenuation module 105 includes at least one capacitor, a first end of the at least one capacitor is connected to the first resonant module 103, and a second end of the at least one capacitor is connected to ground.
  • the first attenuation module 105 includes the fifth capacitor C5, and the second attenuation module 106 includes the sixth capacitor C6 and the seventh capacitor C7.
  • the first end of the fifth capacitor C5 is connected to the second end of the first capacitor C1
  • the second end of the fifth capacitor C5 is connected to ground
  • the first end of the sixth capacitor C6 is connected to the second end of the second capacitor C2.
  • the second terminal of the sixth capacitor C6 is connected to the ground
  • the first terminal of the seventh capacitor C7 is connected to the second terminal of the third capacitor C3
  • the second terminal of the seventh capacitor C7 is connected to the ground.
  • the inductor plays the role of communicating AC resistance and DC, and the corresponding function is realized by connecting the inductor and capacitor in parallel for the first time in this circuit. and a capacitor to ground.
  • the first resonant module 103 includes a first inductor L1.
  • the plurality of second resonant modules 104 include a second inductor L2, a third inductor L3, a fourth inductor L4, a first capacitor C1, a second capacitor C2 and a third capacitor C3, where the inductors and capacitors are connected correspondingly, for example, the first
  • the first end of the inductor L1 is connected to the radio frequency input module 101
  • the second end of the first inductor L1 is connected to the first end of the first capacitor C1
  • the second end of the first capacitor C1 is connected to the first end of the second capacitor C2.
  • the second end of the second capacitor C2 is connected to the first end of the third capacitor C3, the second end of the third capacitor C3 is connected to the radio frequency output module 102, the second inductor L2 is connected in parallel with the first capacitor C1, and the third inductor L3
  • the second capacitor C2 is connected in parallel
  • the fourth inductor L4 is connected in parallel with the third capacitor C3
  • the first attenuation module 105 includes the fourth capacitor C4
  • the second attenuation module 106 includes the fifth capacitor C5 and the sixth capacitor C6.
  • the fourth The first end of the capacitor C4 is connected to the first end of the first capacitor C1, the second end of the fourth capacitor C4 is connected to ground, the first end of the fifth capacitor C5 is connected to the first end of the second capacitor C2, and the fifth capacitor C5
  • the second terminal of the sixth capacitor C6 is connected to the ground, and the first terminal of the sixth capacitor C6 is connected to the first terminal of the third capacitor C3.
  • the radio frequency signal input from the radio frequency input module 101 and the radio frequency signal passing through the inductor are first processed by the first attenuation module 105 and transmitted to the non-passband frequency loss at the pole, and then After the resonance processing of the first resonant module among the plurality of second resonant modules 104, the passband frequency is stabilized in the preset value range, so that the low-pass filter has steep cutoff frequency characteristics and good out-of-band high suppression characteristics.
  • the number of resonant circuits connected in series of multiple second resonant modules 104 is selected to be connected to one or more second resonant circuits according to the effect that the device needs to achieve and the actual cost, and the specific number is not limited.
  • the number of attenuation circuits of the plurality of second attenuation modules 106 is selected to be connected to one or more second attenuation circuits according to the effect that the device needs to achieve and the actual cost, and the specific number is not limited.
  • the radio frequency input module 101 also includes a plurality of through holes.
  • the radio frequency input module 101 includes two through holes, the two through holes are respectively connected to the ground terminal Via of the radio frequency coplanar end; wherein, the radio frequency output module When 102 includes two through holes, the two through holes are respectively connected to the ground terminal Via of the radio frequency coplanar end; wherein, the capacitors in the branch composed of the first attenuation module 105 and a plurality of second attenuation modules 106 are respectively connected to the corresponding through holes. Via, the capacitance of each branch is connected to the ground metal layer through the through hole.
  • the size of the through hole on the back side of the ground is 84 ⁇ 5um. It should be noted that the size of the through hole is not limited to the size set in this embodiment. The specific size can be based on the realization of the device function and the large-scale and industrialization of the through hole. Convenient and economical angle selection for production.
  • the first attenuation module 105 includes at least one capacitor, a first end of the at least one capacitor is connected to the first resonant module 103, and a second end of the at least one capacitor is connected to ground.
  • each branch capacitor is connected to the common contact point, and the second end of each branch capacitor is connected to the ground metal layer.
  • the first inductor L1 and the second inductor L2 are spiral inductors or rectangular inductors.
  • the inductor of the passive low-pass filter is an inductor made of ring-shaped magnetic material, and the finished shape of the inductor is multiple spiral inductors or rectangular inductors.
  • the inductor can only use ring-shaped magnetic materials and cannot use polygonal materials.
  • the inductor made is an air-core inductor; optionally, the style of the finished product is not limited to annular or rectangular, and the specific style and shape can be set according to the size of the board and the need to realize the corresponding functions.
  • the structure of the first capacitor C1 and the second capacitor C2 is a metal-dielectric-metal structure.
  • the dielectric layer in the middle of the capacitor can be made of different materials.
  • the medium includes one or more of alumina, capacitor paper, and ceramic tiles.
  • the specific dielectric material is selected according to the functional needs and Manufacturing cost selection, the specific type is not limited.
  • the passive low-pass filter further includes a substrate layer and a grounded metal layer;
  • the first resonant module 103 and the second resonant module 104 are formed on the substrate layer, and the first attenuation module 105 and the second attenuation module 106 are connected to the ground metal layer through a through-hole structure.
  • the capacitors set in the low-pass filter are formed on the substrate layer using a thin-film integrated passive device (IPD) process, and are composed of top metal, bottom metal, and top metal and bottom metal. It is composed of an intermediate insulation layer.
  • IPD thin-film integrated passive device
  • the underlying metal surface is embedded in a grounded metal layer to form a sheath or shielding layer, and one or more of single-point grounding, midpoint grounding, two-end grounding, and cross-interconnection are used.
  • the intermediate insulating layer may be, but is not limited to, a silicon nitride intermediate insulating layer.
  • the substrate layer is a semiconductor material arsenide as a conductive surface layer, and the thickness of the substrate is 100 ⁇ 5 ⁇ m.
  • the substrate layer is a gallium arsenide (GaAs) substrate.
  • GaAs gallium arsenide
  • other semiconductor materials such as silicon, can also be used.
  • the thickness of the substrate layer ⁇ 200 ⁇ m, preferably, the thickness of the substrate layer 10 is 100 ⁇ m, but the specific substrate thickness is selected according to functional implementation.
  • the passive low-pass filter, the substrate layer, and the ground metal layer form a passive low-pass filter chip; the length of the passive low-pass filter chip is 1.8 ⁇ 0.05mm; the passive low-pass filter chip The width is 0.9 ⁇ 0.05mm; the passive low-pass filter chip height is 0.1 ⁇ 0.05mm.
  • Figure 4 shows the input port return loss S11 and the output port return loss of a low-pass filter with a passband frequency of 0.5 GHz provided by an embodiment of the present application.
  • Figure 5 is a schematic diagram of the stopband suppression S21 parameter test curve of a low-pass filter with a passband frequency of 0.5 GHz provided by an embodiment of the present application.
  • the input port return loss S11 of the low-pass filter is less than -16.0dB in the entire 0-0.5GHz frequency band, indicating that the loss reflected back by the low-pass filter in this embodiment after passing through the main path and each resonant branch is small and low.
  • the filter achieves impedance matching.
  • the stopband suppression S21 of the low-pass filter is greater than -1.82dB in the entire 0-0.5GHz frequency band, indicating that the low-pass filter has small insertion loss and good transmission characteristics.
  • S21 ⁇ -20dB At 1.068GHz, S21 ⁇ -20dB.
  • S21 ⁇ -40dB indicates that the low-pass filter has a good rectangular coefficient and a steep cutoff frequency.
  • S21 ⁇ -35dB indicates low-pass filtering.
  • the device has high out-of-band rejection characteristics.
  • a low-pass filter circuit includes a radio frequency input module 101, a radio frequency output module 102, a plurality of resonant modules and a plurality of attenuation modules; and the radio frequency input module 101, a radio frequency output module 102, a plurality of resonant modules and Multiple attenuation modules are connected to passive low-pass filters respectively.
  • Circuit completion means dividing the internal structure of the device into different functional units or circuits to complete all or part of the functions described above.
  • Each functional unit and circuit in the embodiment can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit.
  • the above-mentioned integrated unit can be hardware-based. It can also be implemented in the form of software functional units.
  • the specific names of each functional unit and circuit are only for the convenience of distinguishing each other and are not used to limit the scope of protection of the present application. For the specific working processes of the units and circuits in the above system, reference can be made to the corresponding processes in the foregoing method embodiments, which will not be described again here.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Filters And Equalizers (AREA)
  • Radar Systems Or Details Thereof (AREA)

Abstract

La présente demande appartient au domaine technique de l'électronique de filtrage, et concerne un filtre passe-bas passif et un circuit de filtre passe-bas. Le filtre passe-bas comprend : un module d'entrée radiofréquence, un premier module de résonance, un premier module d'atténuation, une pluralité de deuxièmes modules de résonance connectés en série, une pluralité de deuxièmes modules d'atténuation et un module de sortie radiofréquence. Spécifiquement, le module d'entrée radiofréquence est utilisé pour délivrer en sortie un premier signal radiofréquence, et le premier module de résonance est utilisé pour délivrer en sortie un deuxième signal radiofréquence d'une fréquence de bande passante prédéfinie ; le premier module d'atténuation est utilisé pour atténuer un signal de fouillis dans le deuxième signal radiofréquence ; la pluralité de deuxièmes modules de résonance connectés en série sont utilisés pour ajuster la fréquence du deuxième signal radiofréquence ; chaque deuxième module d'atténuation est utilisé pour atténuer le signal de fouillis dans le deuxième signal radiofréquence pour générer un troisième signal radiofréquence ; et le module de sortie radiofréquence est utilisé pour délivrer le troisième signal radiofréquence. Les modes de réalisation de la présente demande permettent de résoudre les problèmes de bande passante large bande et de caractéristiques de coupure de fréquence d'un filtre passe-bas classique qui ne peuvent pas satisfaire aux exigences et dont la miniaturisation de volume est insuffisante.
PCT/CN2022/105753 2022-05-30 2022-07-14 Filtre passe-bas passif et circuit de filtre passe-bas WO2023231153A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210602935.1A CN115051669A (zh) 2022-05-30 2022-05-30 一种无源低通滤波器及低通滤波电路
CN202210602935.1 2022-05-30

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WO2023231153A1 true WO2023231153A1 (fr) 2023-12-07

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354777A (zh) * 2011-07-18 2012-02-15 西安瓷芯电子科技有限责任公司 一种ltcc低通滤波器
US20160218696A1 (en) * 2015-01-23 2016-07-28 Murata Manufacturing Co., Ltd. Filter apparatus
CN106326542A (zh) * 2016-08-19 2017-01-11 西安电子科技大学 基于dgs的低通滤波器设计方法
CN109962324A (zh) * 2019-03-29 2019-07-02 哈尔滨工业大学 基于薄膜集成无源器件工艺的小型化紧凑型双工器
CN112421195A (zh) * 2020-12-11 2021-02-26 云南雷迅科技有限公司 一种ipd吸收式带通滤波器
CN213717939U (zh) * 2020-11-23 2021-07-16 昆明学院 一种ipd吸收式低通滤波器

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354777A (zh) * 2011-07-18 2012-02-15 西安瓷芯电子科技有限责任公司 一种ltcc低通滤波器
US20160218696A1 (en) * 2015-01-23 2016-07-28 Murata Manufacturing Co., Ltd. Filter apparatus
CN106326542A (zh) * 2016-08-19 2017-01-11 西安电子科技大学 基于dgs的低通滤波器设计方法
CN109962324A (zh) * 2019-03-29 2019-07-02 哈尔滨工业大学 基于薄膜集成无源器件工艺的小型化紧凑型双工器
CN213717939U (zh) * 2020-11-23 2021-07-16 昆明学院 一种ipd吸收式低通滤波器
CN112421195A (zh) * 2020-12-11 2021-02-26 云南雷迅科技有限公司 一种ipd吸收式带通滤波器

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