WO2023228965A1 - Dispositif térahertz - Google Patents

Dispositif térahertz Download PDF

Info

Publication number
WO2023228965A1
WO2023228965A1 PCT/JP2023/019264 JP2023019264W WO2023228965A1 WO 2023228965 A1 WO2023228965 A1 WO 2023228965A1 JP 2023019264 W JP2023019264 W JP 2023019264W WO 2023228965 A1 WO2023228965 A1 WO 2023228965A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor substrate
semiconductor
thickness
terahertz
Prior art date
Application number
PCT/JP2023/019264
Other languages
English (en)
Japanese (ja)
Inventor
寛武 蒲生
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Publication of WO2023228965A1 publication Critical patent/WO2023228965A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12—Measuring electrostatic fields or voltage-potential
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
    • H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
    • H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode

Definitions

  • the present disclosure relates to a terahertz device.
  • the terahertz band which has a frequency of 0.1 THz to 10 THz, for high-capacity communication, information processing, imaging, measurement, etc.
  • This frequency range has the characteristics of both light and radio waves, and if devices that operate in this frequency band are realized, it will be useful not only for imaging, high-capacity communication, and information processing, but also for physical properties, astronomy, biology, etc. It can be used for many purposes, such as measurement in various fields.
  • a terahertz device having a structure in which a resonant tunnel diode and a fine slot antenna are integrated is known (for example, see Patent Document 1).
  • a terahertz device includes: a semiconductor substrate having a front surface of the substrate and a back surface of the substrate opposite to the front surface of the substrate; an active element provided on the front surface of the substrate that oscillates or detects electromagnetic waves; an insulating substrate disposed on a side of the back surface of the substrate among the substrates and supporting the semiconductor substrate; and a metal layer disposed between the semiconductor substrate and the insulating substrate and in contact with the back surface of the substrate;
  • the substrate has a thickness less than the wavelength of the electromagnetic wave.
  • the terahertz device of the present disclosure it is possible to suppress the generation of electromagnetic waves of a different frequency from the electromagnetic waves of a desired frequency.
  • FIG. 1 is a schematic perspective view of a terahertz device according to one embodiment.
  • FIG. 2 is a schematic side view of the terahertz device of FIG. 1.
  • FIG. 3 is a schematic plan view of the active element and its surroundings of the terahertz device of FIG. 1.
  • FIG. 4 is a schematic cross-sectional view of the terahertz device shown in FIG. 3 taken along line F4-F4.
  • FIG. 5 is a schematic cross-sectional view of the terahertz device of FIG. 3 taken along line F5-F5.
  • FIG. 6 is an enlarged schematic cross-sectional view of the active element and its surroundings of the terahertz device shown in FIG. FIG.
  • FIG. 7 is a schematic circuit diagram showing the circuit configuration of the terahertz device of FIG. 1.
  • FIG. 8 is a schematic cross-sectional view showing the manufacturing process of the terahertz device.
  • FIG. 9 is a schematic cross-sectional view showing the manufacturing process following FIG. 8.
  • FIG. 10 is a schematic cross-sectional view showing the manufacturing process following FIG. 9.
  • FIG. 11 is a schematic cross-sectional view showing the manufacturing process following FIG. 10.
  • FIG. 12 is a schematic cross-sectional view showing the manufacturing process following FIG. 11.
  • FIG. 13 is a schematic cross-sectional view of a terahertz unit of a first application example of the terahertz device.
  • FIG. 14 is a schematic cross-sectional view of a terahertz unit as a second application example of the terahertz device.
  • FIG. 15 is a schematic plan view of a terahertz unit as a third application example of the terahertz device.
  • FIG. 16 is a schematic cross-sectional view of a modified terahertz device.
  • FIG. 17 is a schematic cross-sectional view of a modified example of a terahertz device.
  • FIG. 18 is a schematic cross-sectional view of a modified terahertz device.
  • FIG. 19 is a schematic cross-sectional view of a modified terahertz device.
  • FIG. 20 is a schematic side view of a modified example of a terahertz device.
  • FIG. 2 is a diagram in which the configuration of the terahertz device 10 is simplified for convenience of explanation. Therefore, the side view of the terahertz device 10 shown in FIG. 2 differs from the perspective view of the terahertz device 10 shown in FIG. 1 in the thickness relationship of each component.
  • FIG. 3 is an enlarged plan view of a semiconductor element 20 and its surroundings in the terahertz device 10, which will be described later.
  • FIG. 4 shows a cross-sectional structure of a capacitor 91, which will be described later, of the semiconductor element 20.
  • FIG. 5 shows a cross-sectional structure of a semiconductor substrate 50 and its surroundings, which will be described later, of the semiconductor element 20.
  • FIG. 6 shows an enlarged cross-sectional structure of an active element 60 and its surroundings, which will be described later, in FIG. In FIG. 6, for convenience, an insulating layer 53, which will be described later, is omitted.
  • the terahertz device 10 is formed in the shape of a rectangular parallelepiped.
  • the terahertz device 10 includes a device front surface 11, a device back surface 12 opposite to the device surface 11, and device side surfaces 13 to 16 extending between the device front surface 11 and the device back surface 12.
  • the direction perpendicular to the device surface 11 is defined as the "z direction.”
  • the directions orthogonal to the z direction two mutually orthogonal directions are respectively referred to as the "x direction” and the "y direction.”
  • the device side surface 13 and the device side surface 14 are spaced apart from each other in the x direction. Both device side 13 and device side 14 extend along the yz plane.
  • the device side surface 15 and the device side surface 16 are spaced apart from each other in the y direction. Both device side 15 and device side 16 extend along the xz plane.
  • the terahertz device 10 includes a semiconductor element 20, an insulating substrate 30 as a support substrate that supports the semiconductor element 20, and a metal layer 40 disposed between the semiconductor element 20 and the insulating substrate 30. , is provided.
  • the semiconductor element 20 is an element that converts electromagnetic waves and electrical energy. Note that the term “electromagnetic waves” includes the concepts of light and/or radio waves.
  • the semiconductor element 20 is a functional device that oscillates and radiates electromagnetic waves (terahertz waves) in a predetermined frequency band, for example, a terahertz band.
  • the semiconductor element 20 can be said to be a terahertz element that oscillates and emits terahertz waves.
  • the semiconductor element 20 is a functional device that receives and detects electromagnetic waves (terahertz waves) in a predetermined frequency band, for example, a terahertz band.
  • the semiconductor element 20 can be said to be a terahertz element that receives and detects terahertz waves.
  • the frequency band of the terahertz wave is, for example, 0.1 THz or more and 10 THz or less.
  • the semiconductor element 20 converts the supplied electrical energy into electromagnetic waves by oscillating the supplied electrical energy. Thereby, the semiconductor element 20 emits electromagnetic waves in a desired frequency band. Further, the semiconductor element 20 receives electromagnetic waves and converts the electromagnetic waves into electrical energy. Thereby, the semiconductor element 20 detects electromagnetic waves in a desired frequency band.
  • the semiconductor element 20 is formed into a flat plate shape.
  • the shape of the semiconductor element 20 when viewed from the z direction is rectangular. Note that the shape of the semiconductor element 20 when viewed from the z direction is not limited to a rectangular shape, and may be a circular shape, an elliptical shape, or a polygonal shape.
  • Semiconductor element 20 includes a semiconductor substrate 50.
  • the semiconductor substrate 50 is formed into a flat plate shape.
  • the semiconductor substrate 50 is supported by the insulating substrate 30.
  • the shape of the semiconductor substrate 50 when viewed from the z direction is rectangular. Note that the shape of the semiconductor substrate 50 viewed from the z direction is not limited to a rectangular shape, and may be a circular shape, an elliptical shape, or a polygonal shape.
  • the semiconductor substrate 50 is made of InP (indium phosphide), GaAs (gallium arsenide), AlGaAs (aluminum gallium arsenide), InGaAs (indium gallium arsenide), InGaAsP (indium gallium arsenide phosphide), Si (silicon), or SiC (silicon carbide). , GaN (gallium nitride), GaN 2 , and single crystal AlN (aluminum nitride). In this embodiment, the semiconductor substrate 50 is made of a material containing InP.
  • the semiconductor substrate 50 includes a substrate surface 51 and a substrate back surface 52 opposite to the substrate surface 51.
  • the front surface 51 of the substrate faces the same side as the front surface 11 of the device, and the back surface 52 of the substrate faces the same side as the back surface 12 of the device. Note that the detailed configuration of the semiconductor element 20 will be described later.
  • the substrate surface 51 constitutes the device surface 11 of the terahertz device 10.
  • the insulating substrate 30 is placed on the substrate back surface 52 side of the semiconductor substrate 50.
  • Insulating substrate 30 has a front surface 31 and a back surface 32 opposite to front surface 31 .
  • the front surface 31 faces the same side as the device front surface 11, and the back surface 32 faces the same side as the device back surface 12.
  • the back surface 32 constitutes the device back surface 12 of the terahertz device 10.
  • the shape of the insulating substrate 30 when viewed from the z direction is rectangular.
  • the dimensions of the front surface 31 of the insulating substrate 30 in the x direction and the y direction are equal to the dimensions of the semiconductor substrate 50 in the x direction and the y direction.
  • the side surface of the insulating substrate 30 and the side surface of the semiconductor substrate 50 are flush with each other.
  • the metal layer 40 is in contact with the substrate back surface 52 of the semiconductor substrate 50. Metal layer 40 is in contact with surface 31 of insulating substrate 30 . In this embodiment, the metal layer 40 is formed over the entire back surface 52 of the semiconductor substrate 50. Metal layer 40 is formed over the entire surface 31 of insulating substrate 30 .
  • the metal layer 40 is a bonding layer that bonds the semiconductor substrate 50 and the insulating substrate 30. In other words, it can be said that the semiconductor substrate 50 and the insulating substrate 30 are joined by the metal layer 40.
  • the metal layer 40 is electrically insulated from the semiconductor element 20. The metal layer 40 is in an electrically floating state.
  • the metal layer 40 has a laminated structure of a plurality of metal layers.
  • the metal layer 40 includes a first metal layer 41 and a second metal layer 42 .
  • the first metal layer 41 is provided on the insulating substrate 30.
  • the second metal layer 42 is provided on the back surface 52 of the semiconductor substrate 50. Therefore, the second metal layer 42 is provided on the first metal layer 41.
  • the first metal layer 41 and the second metal layer 42 are formed by sputtering, for example.
  • the first metal layer 41 includes a first metal film 41A provided on the surface 31 of the insulating substrate 30, and a second metal film 41B provided on the first metal film 41A.
  • the second metal layer 42 includes a third metal film 42A provided on the back surface 52 of the semiconductor substrate 50, and a fourth metal film 42B provided on the third metal film 42A.
  • the fourth metal film 42B is in contact with the second metal film 41B.
  • Each of the first metal film 41A, second metal film 41B, third metal film 42A, and fourth metal film 42B includes titanium (Ti), titanium nitride (TiN), gold (Au), silver (Ag), and copper. (Cu), aluminum (Al), and platinum (Pt).
  • both the first metal film 41A and the third metal film 42A are formed of a material containing Ti.
  • Both the second metal film 41B and the fourth metal film 42B are formed of a material containing Au.
  • semiconductor element 20 includes an insulating layer 53 provided on substrate surface 51 of semiconductor substrate 50. As shown in FIG. Insulating layer 53 is arranged at the center of substrate surface 51 in the x and y directions. The shape of the insulating layer 53 when viewed from the z direction is rectangular.
  • the insulating layer 53 is made of a material containing, for example, SiO 2 .
  • the semiconductor element 20 includes an active element 60, a first electrode 70, and a second electrode 80 provided on the substrate surface 51.
  • First electrode 70 and second electrode 80 include an antenna structure 90 .
  • the active element 60 exchanges electromagnetic waves in a predetermined frequency band with electrical energy.
  • Active element 60 is provided, for example, at the center of substrate surface 51 in the x and y directions.
  • the active element 60 converts the supplied electrical energy into electromagnetic waves by being connected to the antenna structure 90.
  • the semiconductor element 20 emits electromagnetic waves in a predetermined frequency band. Therefore, as shown in FIG. 3, the active element 60 can be said to be an oscillation point P1 that oscillates electromagnetic waves, and the antenna structure 90 can be said to be a radiating point P2 that radiates electromagnetic waves.
  • the semiconductor element 20 has a radiation point P2 and an oscillation point P1 at the same position. Note that the position of the oscillation point P1 is not limited to the same position as the radiation point P2, and can be arbitrarily changed. Further, the position of the oscillation point P1 can be set to any position on the substrate surface 51.
  • the active element 60 is, for example, a resonant tunneling diode (RTD).
  • RTD tunnel injection Transit Time
  • IMPATT Impact Ionization Avalanche Transit Time
  • FET GaAs field effect transistor
  • HBT heterojunction bipolar transistor
  • the active element 60 is provided between the first conductive portion 71 of the first electrode 70 and the semiconductor substrate 50 in the z direction. Active element 60 is in contact with both first conductive portion 71 and substrate surface 51 of semiconductor substrate 50 .
  • the first conductive portion 71 includes a connecting portion 71a that overlaps the active element 60 when viewed from the z direction. Further, the active element 60 is provided within the insulating layer 53.
  • a semiconductor layer 61a is provided on the substrate surface 51 of the semiconductor substrate 50. As shown in FIG. 3, the semiconductor layer 61a has a rectangular shape when viewed from the z direction.
  • the semiconductor layer 61a is made of GaInAs, for example.
  • the semiconductor layer 61a is doped with n-type impurities at a high concentration.
  • a GaInAs layer 62a is stacked on the semiconductor layer 61a.
  • the GaInAs layer 62a is doped with n-type impurities.
  • the n-type impurity concentration of the GaInAs layer 62a is lower than the n-type impurity concentration of the semiconductor layer 61a.
  • a GaInAs layer 63a is stacked on the GaInAs layer 62a.
  • the GaInAs layer 63a is not doped with impurities.
  • An AlAs layer 64a is stacked on the GaInAs layer 63a.
  • An InGaAs layer 65 is stacked on the AlAs layer 64a.
  • the InGaAs layer 65 is not doped with impurities.
  • An AlAs layer 64b is stacked on the InGaAs layer 65.
  • the AlAs layer 64a, the InGaAs layer 65, and the AlAs layer 64b constitute a resonant tunnel section.
  • a GaInAs layer 63b not doped with impurities is laminated on the AlAs layer 64b.
  • a GaInAs layer 62b doped with n-type impurities is laminated on the GaInAs layer 63b.
  • a GaInAs layer 61b doped with n-type impurities at a high concentration is laminated on the GaInAs layer 62b. Therefore, the n-type impurity concentration of the GaInAs layer 61b is higher than the n-type impurity concentration of the GaInAs layer 62b.
  • the connecting portion 71a of the first conductive portion 71 is located on the GaInAs layer 61b and is in contact with the GaInAs layer 61b.
  • the specific configuration of the active element 60 can be arbitrarily changed as long as it is capable of generating (or detecting, or both) electromagnetic waves.
  • the active element 60 may be one that performs at least one of oscillation and detection of electromagnetic waves in the terahertz band.
  • the semiconductor element 20 includes a first conductive part 71 and a second conductive part 81 that function as an antenna structure 90.
  • the first conductive part 71 is formed integrally with the first electrode 70
  • the second conductive part 81 is formed integrally with the second electrode 80. That is, the first conductive part 71 is a part of the first electrode 70 and the second conductive part 81 is a part of the second electrode 80.
  • the active element 60 is provided between the first conductive part 71 and the second conductive part 81.
  • the antenna structure 90 of this embodiment is a dipole antenna.
  • the first conductive part 71 and the second conductive part 81 extend from the active element 60 in mutually opposite directions.
  • the length of the antenna structure 90 that is, the length from the tip of the first conductive part 71 to the tip of the second conductive part 81, is, for example, 1/2 wavelength ( ⁇ / 2) is set.
  • the antenna structure 90 is not limited to a dipole antenna, and may be other antenna structures such as a bow tie antenna, a slot antenna, a patch antenna, or a ring antenna.
  • the length of antenna structure 90 may vary depending on the configuration of antenna structure 90.
  • the first conductive part 71 and the second conductive part 81 are arranged on both sides of the active element 60 in the x direction. Each of the first conductive part 71 and the second conductive part 81 extends in the x direction. As shown in FIG. 5, the connecting portion 71a of the first conductive portion 71 is provided on the insulating layer 53. The second conductive portion 81 is provided in the opening 53A of the insulating layer 53. The second conductive portion 81 is provided on the substrate surface 51 of the semiconductor substrate 50.
  • the first electrode 70 includes a first wiring part 72 connected to the first conductive part 71, a first electrode plate 73 connected to the first wiring part 72, and a first electrode plate 73 connected to the first wiring part 72. a first electrode pad 74 connected to the first electrode pad 74;
  • the first conductive part 71, the first wiring part 72, and the first electrode plate 73 are provided at a position overlapping with the insulating layer 53 when viewed from the z direction.
  • the first electrode pad 74 is arranged closer to the side surface 16 of the device than the insulating layer 53 is.
  • the first wiring section 72 is formed in a band shape extending along the y direction.
  • the shape of the first electrode plate 73 when viewed from the z direction is rectangular.
  • the first electrode plate 73 is arranged at a position overlapping a part of the second electrode 80 when viewed from the y direction.
  • the first electrode pad 74 is arranged closer to the device side surface 14 (see FIG. 1) than the second electrode 80 is.
  • the first electrode pad 74 has a rectangular shape when viewed from the z direction.
  • the first electrode pad 74 is formed on the substrate surface 51 of the semiconductor substrate 50.
  • the second electrode 80 includes a second wiring part 82 connected to the second conductive part 81, a second electrode plate 83 connected to the second wiring part 82, and a second electrode connected to the second electrode plate 83. pad 84.
  • the second conductive part 81, the second wiring part 82, and the second electrode plate 83 are provided at positions overlapping with the insulating layer 53 when viewed from the z direction.
  • the second electrode pad 84 is arranged closer to the side surface 16 of the device than the insulating layer 53 is.
  • the second wiring portion 82 is formed in a band shape extending along the y direction.
  • the shape of the second electrode plate 83 when viewed from the z direction is rectangular.
  • the second electrode plate 83 is arranged at a position overlapping a part of the first electrode 70 when viewed from the y direction.
  • the second electrode pad 84 is arranged closer to the device side surface 13 (see FIG. 1) than the first electrode 70 is.
  • the shape of the second electrode pad 84 when viewed from the z direction is rectangular.
  • the second electrode pad 84 is formed on the substrate surface 51 of the semiconductor substrate 50.
  • the first electrode pad 74 constitutes the main electrode
  • the second electrode pad 84 constitutes the ground electrode.
  • the second electrode plate 83 is provided on the substrate surface 51 of the semiconductor substrate 50.
  • the second electrode plate 83 is covered with the insulating layer 53.
  • the first electrode plate 73 is provided on the insulating layer 53.
  • the first electrode plate 73 and the second electrode plate 83 are arranged to face each other with the insulating layer 53 in between in the z direction.
  • the semiconductor element 20 includes an MIM (Metal Insulator Metal) capacitor (hereinafter referred to as "capacitor 91").
  • the capacitor 91 short-circuits the first electrode 70 and the second electrode 80 at high frequency. Capacitor 91 can reflect high-frequency electromagnetic waves, so it functions as a low-pass filter. Note that the capacitor 91 may be omitted. That is, the first electrode plate 73 may be omitted from the first electrode 70 and the second electrode plate 83 may be omitted from the second electrode 80.
  • the second electrode plate 83 includes a protrusion 83a that protrudes closer to the antenna structure 90 than the first electrode plate 73 in the y direction.
  • a contact portion 85 is provided between the protrusion 83a and the second wiring portion 82 to connect the protrusion 83a and the second wiring portion 82. Thereby, the second electrode plate 83 and the second wiring section 82 are electrically connected.
  • the semiconductor substrate 50 has a thickness that is less than the wavelength ⁇ of the electromagnetic waves oscillated by the semiconductor element 20.
  • ⁇ _0 is the wavelength in free space
  • ⁇ _r is the relative dielectric constant of the semiconductor substrate 50.
  • the free space is a space in which no dielectric exists, such as a vacuum.
  • the semiconductor substrate 50 is made of InP. Therefore, the dielectric constant ⁇ _r of the semiconductor substrate 50 is 12.47.
  • the thickness of the semiconductor substrate 50 is defined as "thickness Ts1".
  • the thickness Ts1 of the semiconductor substrate 50 can be defined by the distance between the front surface 51 of the substrate and the back surface 52 of the substrate in the z direction.
  • the thickness Ts1 of the semiconductor substrate 50 is 1/2 or less of the wavelength ⁇ of the electromagnetic wave oscillated by the semiconductor element 20. In one example, the thickness Ts1 of the semiconductor substrate 50 is 1 ⁇ 3 or less of the wavelength ⁇ of the electromagnetic wave oscillated by the semiconductor element 20. In this embodiment, the thickness Ts1 of the semiconductor substrate 50 is less than 1/4 of the wavelength ⁇ of the electromagnetic wave oscillated by the semiconductor element 20. Further, in one example, the thickness Ts1 of the semiconductor substrate 50 is 1 ⁇ 5 or more of the wavelength ⁇ of the electromagnetic wave oscillated by the semiconductor element 20.
  • the thickness Ts1 of the semiconductor substrate 50 is set according to the wavelength ⁇ of the electromagnetic wave oscillated by the semiconductor element 20. That is, the thickness Ts1 of the semiconductor substrate 50 is set according to the set frequency of the electromagnetic waves of the semiconductor element 20. The thickness Ts1 of the semiconductor substrate 50 is set to become thinner as the frequency of the electromagnetic waves from the semiconductor element 20 becomes higher.
  • the thickness Ts1 of the semiconductor substrate 50 in the case where the frequency band of electromagnetic waves is 0.1 THz (100 GHz) or more and 10 THz or less, which is the frequency band of terahertz waves, will be described below.
  • the thickness Ts1 of the semiconductor substrate 50 is set to be less than the thickness at least when the frequency of electromagnetic waves is 100 GHz.
  • the wavelength ⁇ _0 of the electromagnetic waves is 1500 ⁇ m or more and less than 3000 ⁇ m.
  • the wavelength ⁇ of the electromagnetic wave is 425 ⁇ m or more and less than 850 ⁇ m.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 425 ⁇ m and less than 850 ⁇ m, which corresponds to the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 212.5 ⁇ m and less than or equal to 425 ⁇ m, which corresponds to 1/2 of the wavelength ⁇ of the electromagnetic wave. In one example, the thickness Ts1 of the semiconductor element 20 is greater than or equal to 141.7 ⁇ m and less than or equal to 283.3 ⁇ m, which corresponds to 1 ⁇ 3 of the wavelength ⁇ of the electromagnetic wave. In one example, the thickness Ts1 of the semiconductor element 20 is greater than or equal to 106.3 ⁇ m and less than 212.5 ⁇ m, which corresponds to 1/4 of the wavelength ⁇ of the electromagnetic wave. Note that when the frequency of the electromagnetic waves of the semiconductor element 20 is in the 100 GHz band (100 GHz or more and less than 200 GHz), the thickness Ts1 of the semiconductor element 20 may be less than 106.3 ⁇ m.
  • the wavelength ⁇ _0 of the electromagnetic wave is 750 ⁇ m or more and less than 1000 ⁇ m.
  • the wavelength ⁇ of the electromagnetic wave is 212.4 ⁇ m or more and less than 283.2 ⁇ m.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 212.4 ⁇ m and less than 283.2 ⁇ m, which corresponds to the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 106.2 ⁇ m and less than or equal to 141.6 ⁇ m, which corresponds to 1/2 of the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 70.8 ⁇ m and less than or equal to 94.4 ⁇ m, which corresponds to 1 ⁇ 3 of the wavelength ⁇ of the electromagnetic wave. In one example, the thickness Ts1 of the semiconductor element 20 is greater than or equal to 53.1 ⁇ m and less than or equal to 70.8 ⁇ m, which corresponds to 1/4 of the wavelength ⁇ of the electromagnetic wave. Note that when the frequency of the electromagnetic waves of the semiconductor element 20 is in the 300 GHz band (300 GHz or more and less than 400 GHz), the thickness Ts1 of the semiconductor element 20 may be less than 53.1 ⁇ m.
  • the wavelength ⁇ _0 of the electromagnetic wave is 500 ⁇ m or more and less than 600 ⁇ m.
  • the wavelength ⁇ of the electromagnetic wave is 141.6 ⁇ m or more and less than 169.9 ⁇ m.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 141.6 ⁇ m and less than 169.9 ⁇ m, which corresponds to the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is 70.8 ⁇ m or more and 85 ⁇ m or less, which corresponds to 1/2 of the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 47.2 ⁇ m and less than or equal to 56.6 ⁇ m, which corresponds to 1 ⁇ 3 of the wavelength ⁇ of the electromagnetic wave. In one example, the thickness Ts1 of the semiconductor element 20 is greater than or equal to 35.4 ⁇ m and less than or equal to 42.5 ⁇ m, which corresponds to 1/4 of the wavelength ⁇ of the electromagnetic wave. Note that when the frequency of the electromagnetic waves of the semiconductor element 20 is in the 500 GHz band (500 GHz or more and less than 600 GHz), the thickness Ts1 of the semiconductor element 20 may be less than 35.4 ⁇ m.
  • the wavelength ⁇ _0 of the electromagnetic wave is 150 ⁇ m or more and 300 ⁇ m or less.
  • the wavelength ⁇ of the electromagnetic wave is 42.5 ⁇ m or more and 85 ⁇ m or less.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 42.5 ⁇ m and less than or equal to 85 ⁇ m, which corresponds to the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is greater than or equal to 21.3 ⁇ m and less than or equal to 42.5 ⁇ m, which corresponds to 1/2 of the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor element 20 is 14.2 ⁇ m or more and 28.3 ⁇ m or less, which corresponds to 1/3 of the wavelength ⁇ of the electromagnetic wave. In one example, the thickness Ts1 of the semiconductor element 20 is 10.6 ⁇ m or more and less than 21.3 ⁇ m, which corresponds to 1/4 of the wavelength ⁇ of the electromagnetic wave. In addition, when the frequency of the electromagnetic wave of the semiconductor element 20 is 1 THz or more and 2 THz or less, the thickness Ts1 of the semiconductor element 20 may be less than 10.6 ⁇ m.
  • the wavelength ⁇ _0 of the electromagnetic wave is 30 ⁇ m.
  • the wavelength ⁇ of the electromagnetic wave is 8.5 ⁇ m.
  • the thickness Ts1 of the semiconductor substrate 50 is less than 8.5 ⁇ m, which corresponds to the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor substrate 50 is 4.3 ⁇ m or less, which corresponds to 1/2 of the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor substrate 50 is 2.8 ⁇ m or less, which corresponds to 1 ⁇ 3 of the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor substrate 50 is 2.1 ⁇ m or less, which corresponds to 1/4 of the wavelength ⁇ of the electromagnetic wave.
  • the thickness Ts1 of the semiconductor substrate 50 is set according to the frequency of the electromagnetic waves of the semiconductor element 20 used. For example, by setting the thickness Ts1 of the semiconductor substrate 50 to 20 ⁇ m or more and 300 ⁇ m or less, the use of the electromagnetic waves of the semiconductor element 20 is reduced. Applicable to most frequencies. That is, when the frequency of the electromagnetic waves of the semiconductor element 20 is 100 GHz or more and 1 THz or less, the thickness Ts1 of the semiconductor substrate 50 may be set to 20 ⁇ m or more and 300 ⁇ m or less. When the frequency of the electromagnetic waves of the semiconductor element 20 is higher than 1 THz, the thickness Ts1 of the semiconductor substrate 50 may be set according to the frequency.
  • the insulating substrate 30 is made of at least one material selected from the group of AlN, SiC, alumina (Al 2 O 3 ), Si, and silicon oxide (SiO 2 ).
  • the insulating substrate 30 has higher rigidity than the semiconductor substrate 50.
  • the thickness Ts2 of the insulating substrate 30 is thicker than the thickness Ts1 of the semiconductor substrate 50.
  • the thickness Ts2 of the insulating substrate 30 can be defined by the distance between the front surface 31 and the back surface 32 of the insulating substrate 30 in the z direction.
  • the insulating substrate 30 is formed of a material having a Young's modulus higher than that of the semiconductor substrate 50, such as AlN, SiC, Al2O3 , etc., in the range where the insulating substrate 30 has higher rigidity than the semiconductor substrate 50,
  • the thickness Ts2 of the insulating substrate 30 may be less than or equal to the thickness Ts1 of the semiconductor substrate 50.
  • the insulating substrate 30 is formed of a material having a Young's modulus that is approximately the same as that of the semiconductor substrate 50, such as Si or SiO 2 , the insulating substrate 30 is The thickness Ts2 of the semiconductor substrate 50 is made thicker than the thickness Ts1 of the semiconductor substrate 50.
  • the thickness Ts1 of the semiconductor substrate 50 is thicker than the thickness Tm of the metal layer 40.
  • the thickness Tm of the metal layer 40 is, for example, 10 nm or more and 300 nm or less.
  • the thickness Tm of the metal layer 40 can be defined, for example, by the distance between the substrate back surface 52 of the semiconductor substrate 50 and the front surface 31 of the insulating substrate 30 in the z direction.
  • the thickness Ts2 of the insulating substrate 30 is approximately 520 ⁇ m. Therefore, in this embodiment, the thickness Ts2 of the insulating substrate 30 is thicker than the thickness Ts1 (20 ⁇ m or more and 300 ⁇ m or less) of the semiconductor substrate 50.
  • a resonant tunneling diode RTD as an active element 60 is electrically connected by a first electrode 70 and a second electrode 80. More specifically, the resonant tunneling diode RTD is electrically connected via the first wiring section 72 of the first electrode 70 and the second wiring section 82 of the second electrode 80.
  • An antenna structure 90 configured by the first conductive part 71 of the first electrode 70 and the second conductive part 81 of the second electrode 80 is electrically connected in parallel with the resonant tunnel diode RTD.
  • a capacitor 91 configured by the first electrode plate 73 of the first electrode 70 and the second electrode plate 83 of the second electrode 80 is electrically connected in parallel with the resonant tunnel diode RTD.
  • the first wiring section 72 includes an inductor L1 and a wiring resistance R1.
  • the second wiring section 82 includes an inductor L2 and a wiring resistance R2.
  • the first wiring section 72, the second wiring section 82, and the capacitor 91 form an LC resonant circuit.
  • the semiconductor element 20 oscillates electromagnetic waves by LC resonance.
  • FIGS. 8 to 12 are schematic cross-sectional views showing an example of the manufacturing process of the terahertz device 10. Note that hatched lines are omitted in FIGS. 8 to 12 for convenience.
  • the method for manufacturing the terahertz device 10 includes preparing a semiconductor substrate 850.
  • Semiconductor substrate 850 is supported by support substrate 900.
  • Support substrate 900 is made of sapphire, for example.
  • the semiconductor substrate 850 is a semiconductor wafer on which a plurality of semiconductor substrates 50 (see FIG. 2) can be manufactured, and is thicker than the thickness Ts1 of the semiconductor substrate 50 (see FIG. 2).
  • the semiconductor substrate 850 is made of a material containing, for example, InP.
  • the semiconductor substrate 850 has a substrate surface 851 and a substrate back surface 852 opposite to the substrate surface 851.
  • Support substrate 900 is bonded to substrate surface 851.
  • the back surface 852 of the substrate is exposed.
  • the method for manufacturing the terahertz device 10 includes grinding the semiconductor substrate 850 to reduce its thickness.
  • the thickness of the semiconductor substrate 850 is made equal to the thickness Ts1 of the semiconductor substrate 50. That is, the amount of grinding of the semiconductor substrate 850 is set according to the frequency of the electromagnetic waves of the semiconductor element 20. The amount of grinding of the semiconductor substrate 850 increases as the frequency of the electromagnetic waves of the semiconductor element 20 increases.
  • Grinding to reduce the thickness of the semiconductor substrate 850 includes mirror polishing the back surface 52 of the substrate.
  • Mirror polishing is performed by a known method such as chemical mechanical polishing (CMP).
  • CMP chemical mechanical polishing
  • the back surface 52 of the substrate is mirror polished so that the arithmetic mean roughness Ra of the back surface 52 of the substrate after mirror polishing is 10 nm or less. Note that the arithmetic mean roughness Ra of the back surface 52 of the substrate may be 5 nm or less.
  • the method for manufacturing the terahertz device 10 includes forming a second metal layer 842 on the back surface 852 of the semiconductor substrate 850. More specifically, first, the third metal film 842A is formed on the back surface 852 of the semiconductor substrate 850. Subsequently, a fourth metal film 842B is formed on the third metal film 842A.
  • the third metal film 842A and the fourth metal film 842B are formed by sputtering, for example.
  • the third metal film 842A is formed of a material containing Ti, for example.
  • the fourth metal film 842B is formed of a material containing Au, for example.
  • the second metal layer 842 is configured by the third metal film 842A and the fourth metal film 842B. Note that in FIG.
  • the thickness of the second metal layer 842 is thicker than the thickness of the semiconductor substrate 850 in order to clearly show the laminated structure of the second metal layer 842, but in reality, the thickness of the second metal layer 842 is The thickness is thinner than the thickness of the semiconductor substrate 850.
  • the method for manufacturing the terahertz device 10 includes preparing an insulating substrate 830.
  • the insulating substrate 830 is a substrate on which a plurality of insulating substrates 30 can be manufactured, and has the same thickness as the thickness Ts2 of the insulating substrate 30.
  • the insulating substrate 830 is made of a material containing AlN, for example.
  • the method for manufacturing the terahertz device 10 includes forming a first metal layer 841 on the surface 831 of the insulating substrate 830. More specifically, first, a first metal film 841A is formed on the surface 831 of the insulating substrate 830. Subsequently, a second metal film 841B is formed on the first metal film 841A. The first metal film 841A and the second metal film 841B are formed by sputtering, for example. The first metal film 841A is formed of a material containing Ti, for example. The second metal film 841B is formed of a material containing Au, for example. The first metal layer 841 is configured by the first metal film 841A and the second metal film 841B.
  • the method for manufacturing the terahertz device 10 includes bonding a first metal layer 841 and a second metal layer 842.
  • the first metal layer 841 and the second metal layer 842 are diffusion bonded.
  • a metal layer 840 is formed.
  • the metal layer 840 becomes a bonding layer that bonds the semiconductor substrate 850 and the insulating substrate 830.
  • the method for manufacturing the terahertz device 10 includes removing the support substrate 900.
  • the support substrate 900 is removed from the semiconductor substrate 850 by grinding the support substrate 900.
  • the method for manufacturing the terahertz device 10 includes forming an insulating layer 53, an active element 60, a first electrode 70, and a second electrode 80 (see FIG. 3) on a substrate surface 851 of a semiconductor substrate 850. Including.
  • the method for manufacturing the terahertz device 10 includes cutting it into pieces. More specifically, the semiconductor substrate 850, metal layer 840, and insulating substrate 830 are cut by the dicing blade. Through the above steps, the terahertz device 10 is manufactured.
  • Electromagnetic waves (terahertz waves) emitted or detected by the active element 60 propagate through a plurality of paths around the active element 60, for example between the first electrode 70 and the second electrode 80.
  • the electromagnetic waves propagate, for example, in the thickness direction of the semiconductor substrate 50.
  • a standing wave is generated within the semiconductor substrate 50. This standing wave causes the substrate mode of the semiconductor substrate 50.
  • an electromagnetic wave having a frequency different from the desired frequency is generated in the terahertz device 10.
  • the thickness Ts1 of the semiconductor substrate 50 is less than the wavelength ⁇ of the electromagnetic waves, the electromagnetic waves propagating in the thickness direction of the semiconductor substrate 50 reach the wavelength ⁇ . It is blocked by layer 40. Thereby, the generation of standing waves within the semiconductor substrate 50 can be suppressed. Therefore, the occurrence of substrate mode in the semiconductor substrate 50 can be suppressed. Therefore, generation of electromagnetic waves of a frequency different from the desired frequency of electromagnetic waves in the terahertz device 10 can be suppressed.
  • the support substrate 900 is removed to form the first electrode 70 and the like.
  • the thickness Ts1 of the semiconductor substrate 850 is reduced, the rigidity of the semiconductor substrate 850 is reduced. Therefore, when the semiconductor substrate 850 is transported alone after the support substrate 900 is removed, the semiconductor substrate 850 is deformed because the rigidity of the semiconductor substrate 850 is low. This may cause damage to the semiconductor substrate 850. Therefore, it is difficult to transport the semiconductor substrate 850 alone.
  • the insulating substrate 830 is bonded to the semiconductor substrate 850 via the metal layer 840. Since the semiconductor substrate 850 is reinforced by the insulating substrate 830, deformation of the semiconductor substrate 850 can be suppressed when the semiconductor substrate 850 is transported. Therefore, the semiconductor substrate 850 can be transported.
  • the terahertz device 10 includes a semiconductor substrate 50 having a substrate surface 51 and a substrate back surface 52 opposite to the substrate surface 51, and an active element 60 provided on the substrate surface 51 to oscillate or detect electromagnetic waves.
  • An insulating substrate 30 disposed on the side of the substrate back surface 52 of the semiconductor substrate 50 and supporting the semiconductor substrate, and a metal layer 40 disposed between the semiconductor substrate 50 and the insulating substrate 30 and in contact with the substrate back surface 52.
  • the semiconductor substrate 50 has a thickness that is less than the wavelength ⁇ of the electromagnetic wave of the active element 60.
  • the semiconductor substrate 50 is supported by the insulating substrate 30, deformation of the semiconductor substrate 50 can be suppressed. Therefore, when manufacturing the terahertz device 10, it is possible to suppress the occurrence of damage to the semiconductor substrate 850 constituting the semiconductor substrate 50, and it is possible to suitably transport the semiconductor substrate 850.
  • the thickness Ts1 of the semiconductor substrate 50 is 1/2 or less of the wavelength ⁇ of the electromagnetic wave. According to this configuration, it is possible to further suppress the occurrence of a substrate mode caused by electromagnetic waves propagating within the semiconductor substrate 50, and therefore to further suppress the generation of electromagnetic waves of a frequency different from the electromagnetic waves of a desired frequency in the terahertz device 10. can.
  • the thickness Ts1 of the semiconductor substrate 50 is less than 1/4 of the wavelength ⁇ of the electromagnetic wave. According to this configuration, it is possible to further suppress the occurrence of a substrate mode caused by electromagnetic waves propagating within the semiconductor substrate 50, and therefore to further suppress the generation of electromagnetic waves of a frequency different from the electromagnetic waves of a desired frequency in the terahertz device 10. can.
  • the thickness Ts1 of the semiconductor substrate 50 is thicker than the thickness Tm of the metal layer 40. According to this configuration, since the thickness Ts1 of the semiconductor substrate 50 does not become excessively thin, the semiconductor substrate 50 can be manufactured easily.
  • the insulating substrate 30 has higher rigidity than the semiconductor substrate 50. According to this configuration, the insulating substrate 30 is less likely to deform than the semiconductor substrate 50. Therefore, deformation of the semiconductor substrate 50 can be suppressed by the insulating substrate 30.
  • the thickness Ts2 of the insulating substrate 30 is thicker than the thickness Ts1 of the semiconductor substrate 50. According to this configuration, the insulating substrate 30 has higher rigidity than the semiconductor substrate 50 even if the same material as that of the semiconductor substrate 50 is used, for example. Therefore, deformation of the semiconductor substrate 50 can be suppressed by the insulating substrate 30. Therefore, it is possible to expand the selection of materials for forming the insulating substrate 30.
  • FIG. 13 shows a schematic cross-sectional structure of a terahertz unit 100, which is a first application example of the terahertz device 10.
  • FIG. 14 shows a schematic cross-sectional structure of a terahertz unit 200, which is a second application example of the terahertz device 10.
  • FIG. 15 shows a schematic cross-sectional structure of a terahertz unit 300, which is a third application example of the terahertz device 10. Note that the terahertz device 10 shown in FIGS. 13 and 14 is shown to be thicker than the actual thickness from the viewpoint of ease of understanding the drawings.
  • the terahertz unit 100 includes a terahertz device 10, a dielectric 110, an antenna base 120, a reflective film 130 as a reflecting section, and a gas space 140.
  • the gas in the gas space 140 is, for example, air.
  • the dielectric 110 is made of a dielectric material through which electromagnetic waves generated from the semiconductor element 20 of the terahertz device 10 pass.
  • the dielectric 110 is made of a resin material.
  • An example of the resin material used is epoxy resin (eg, glass epoxy resin).
  • Dielectric 110 has insulating properties.
  • the dielectric refractive index n2, which is the refractive index (absolute refractive index) of the dielectric 110, is lower than the element refractive index n1, which is the refractive index of the semiconductor element 20.
  • the element refractive index n1 is higher than the gas refractive index n3, which is the refractive index of the gas in the gas space 140.
  • the dielectric refractive index n2 is higher than the gas refractive index n3.
  • the dielectric refractive index n2 is 1.55 and the element refractive index n1 is 3.4.
  • the element refractive index n1 is the refractive index of the semiconductor substrate 50.
  • the semiconductor substrate 50 is made of a material containing InP.
  • a dielectric 110 surrounds the terahertz device 10.
  • dielectric 110 surrounds the entire terahertz device 10 . It can also be said that the dielectric 110 seals the terahertz device 10.
  • the dielectric 110 is formed into a rectangular plate shape, for example.
  • the antenna base 120 has a rectangular parallelepiped shape as a whole.
  • Antenna base 120 is made of, for example, an insulating material.
  • the antenna base 120 is made of a dielectric material, for example, a synthetic resin such as epoxy resin. Note that the material constituting the antenna base 120 is arbitrary, and may be, for example, Si or glass.
  • a dielectric material 110 is laminated on the base surface 121 of the antenna base 120.
  • the dielectric 110 is formed so as to protrude from the antenna base 120 when viewed from the z direction.
  • the antenna base 120 has an antenna recess 122 recessed from the base surface 121.
  • Antenna recess 122 is recessed from base surface 121 in a direction away from dielectric 110 .
  • the antenna recess 122 is formed into a hemispherical shape as a whole.
  • the antenna recess 122 is open toward the dielectric 110.
  • the opening of the antenna recess 122 is circular when viewed from the z direction.
  • the antenna recess 122 has an antenna surface 123 that faces the terahertz device 10 via the dielectric 110 and the gas space 140.
  • the antenna surface 123 is the inner surface of the antenna recess 122.
  • the antenna surface 123 is formed to correspond to the shape of the antenna. In one example, the antenna surface 123 is curved so as to be concave in a direction away from the terahertz device 10.
  • the antenna surface 123 is curved, for example, in the shape of a mortar. In one example, antenna surface 123 is curved to form a parabolic antenna shape.
  • the reflective film 130 reflects electromagnetic waves emitted from the semiconductor element 20 in one direction.
  • a reflective film 130 is formed on the antenna surface 123. Therefore, the reflective film 130 has an antenna shape.
  • the reflective film 130 is a parabolic mirror of revolution.
  • the reflective film 130 is made of a material that reflects electromagnetic waves emitted from the semiconductor element 20, and is made of a metal such as Cu or an alloy.
  • the reflective film 130 may have a single layer structure or a multilayer structure. Electromagnetic waves emitted from the semiconductor element 20 are reflected upward by the reflective film 130. Therefore, the terahertz unit 100 is configured to radiate electromagnetic waves upward.
  • the terahertz unit 100 includes external electrodes 151 and 152 used for electrical connection with the outside, and conductive parts 161 and 162 that are electrically connected to the terahertz device 10.
  • External electrodes 151 and 152 and conductive parts 161 and 162 are each provided on dielectric 110.
  • External electrodes 151 and 152 are provided so as to be exposed from dielectric 110.
  • the conductive parts 161 and 162 are provided within the dielectric 110.
  • the external electrodes 151 and 152 are arranged at positions that do not overlap the reflective film 130 when viewed from the z direction. Specifically, the external electrodes 151 and 152 are provided on a portion of the dielectric 110 that protrudes from the antenna base 120.
  • the conductive parts 161 and 162 connect the external electrodes 151 and 152 to the terahertz device 10. More specifically, the conductive part 161 electrically connects the external electrode 151 and the first electrode 70 of the terahertz device 10. The conductive portion 162 electrically connects the external electrode 152 and the second electrode 80 of the terahertz device 10 .
  • the terahertz device 10 is flip-chip mounted to the conductive parts 161 and 162. Specifically, the conductive portion 161 is connected to the first electrode pad 74 via the bump 171. The conductive portion 162 is connected to the second electrode pad 84 via a bump 172.
  • the bumps 171 and 172 have a laminated structure of, for example, a metal layer containing Cu, a metal layer containing Ti, and a metal layer containing tin (Sn). Note that the bumps 171 and 172 may have a single layer structure.
  • the terahertz unit 200 includes a terahertz device 10, a support substrate 210, and a waveguide 220.
  • the support substrate 210 is formed into a rectangular plate shape.
  • Support substrate 210 is made of an insulating material.
  • An example of an insulating material is epoxy resin.
  • Support substrate 210 has a substrate surface 211 and a substrate back surface 212 opposite to substrate surface 211 .
  • the substrate surface 211 corresponds to the "support substrate surface.”
  • Two power supply lines 213 are formed on the substrate surface 211.
  • Two external electrodes 214 are provided on the back surface 212 of the substrate.
  • Two connection conductors 215 are provided in the support substrate 210 to individually connect the two power supply lines 213 and the two external electrodes 214.
  • Terahertz device 10 is mounted on substrate surface 211.
  • the first electrode pad 74 of the first electrode 70 and the second electrode pad 84 of the second electrode 80 of the terahertz device 10 are individually electrically connected to the two power supply lines 213 by wires W.
  • the waveguide 220 is a hollow metal tube that transmits electromagnetic waves.
  • the waveguide 220 is made of a material that is non-transparent to electromagnetic waves emitted or detected by the semiconductor element 20. As this material, a metal material such as Cu, Cu alloy, Al, Al alloy, etc. is used.
  • Waveguide 220 is laminated on substrate surface 211.
  • the waveguide 220 includes a through hole 221 that passes through the waveguide 220 in the z direction.
  • the waveguide 220 is formed into a rectangular parallelepiped shape.
  • the support substrate 210 covers one end of the through hole 221 in the z direction.
  • Waveguide 220 houses terahertz device 10 . That is, the terahertz device 10 is disposed within the through hole 221 when viewed from the z direction.
  • the through hole 221 functions as a transmission region 222 that transmits electromagnetic waves.
  • the transmission region 222 is defined by the tapered surface of the through hole 221. It can also be said that the ter
  • the shape of the through hole 221 when viewed from the z direction is circular.
  • the through hole 221 is formed in a tapered shape whose diameter increases as it moves away from the support substrate 210 in the z direction.
  • the through hole 221 is formed in a tapered shape whose diameter increases as it moves away from the terahertz device 10 in the z direction.
  • the shape of the through hole 221 can be changed arbitrarily.
  • the shape of the through hole 221 viewed from the z direction may be a polygon such as a quadrangle.
  • the terahertz unit 300 includes two semiconductor elements 20 and one insulating substrate 310 that supports these semiconductor elements 20.
  • the insulating substrate 310 has the same configuration as the insulating substrate 30 of the above embodiment.
  • the insulating substrate 310 has larger dimensions in the x direction and in the y direction than the insulating substrate 30 of the above embodiment.
  • the two semiconductor elements 20 include a semiconductor element 20 that oscillates electromagnetic waves and a semiconductor element 20 that detects electromagnetic waves.
  • the two semiconductor elements 20 are arranged side by side on an insulating substrate 310 and spaced apart from each other.
  • the semiconductor element 20 that oscillates electromagnetic waves will be referred to as a first semiconductor element 20A
  • the semiconductor element 20 that detects electromagnetic waves will be referred to as a second semiconductor element 20B.
  • the first semiconductor element 20A includes a first semiconductor substrate 50A, a first active element, a first electrode 70, and a second electrode 80.
  • the first semiconductor substrate 50A, the first active element, the first electrode 70, and the second electrode 80 have the same configuration as the semiconductor substrate 50, the active element 60, the first electrode 70, and the second electrode 80 of the above embodiment.
  • the first active element is an element that oscillates electromagnetic waves.
  • the second semiconductor element 20B includes a second semiconductor substrate 50B, a second active element, a first electrode 70, and a second electrode 80.
  • the second semiconductor substrate 50B, the second active element, the first electrode 70, and the second electrode 80 have the same configuration as the semiconductor substrate 50, the active element 60, the first electrode 70, and the second electrode 80 of the above embodiment.
  • the second active element is an element that detects electromagnetic waves.
  • a metal layer 40 is interposed between the first semiconductor substrate 50A and the insulating substrate 310.
  • a metal layer 40 is interposed between the second semiconductor substrate 50B and the insulating substrate 310.
  • the metal layer 40 between the first semiconductor substrate 50A and the insulating substrate 310 corresponds to a "first substrate side metal layer”
  • the metal layer 40 between the second semiconductor substrate 50B and the insulating substrate 310 corresponds to a "first substrate side metal layer”. This corresponds to the second substrate side metal layer.
  • a first metal layer is interposed between the first semiconductor element 20A and the insulating substrate 310.
  • a second metal layer is interposed between the second semiconductor element 20B and the insulating substrate 310.
  • the first metal layer and the second metal layer have the same configuration as the metal layer 40 (see FIG. 2) of the above embodiment.
  • the terahertz unit 300 may include three or more semiconductor elements 20. That is, the terahertz unit 300 includes a plurality of semiconductor elements 20. All of the plurality of semiconductor elements 20 may be semiconductor elements that oscillate electromagnetic waves. Furthermore, all of the plurality of semiconductor elements 20 may be semiconductor elements that detect electromagnetic waves. Further, among the plurality of semiconductor elements 20, the number of first semiconductor elements 20A and the number of second semiconductor elements 20B may be different from each other.
  • Example of change The above embodiment can be modified and implemented as follows. Further, the above embodiment and the following modifications can be implemented in combination with each other within a technically consistent range. Note that in FIGS. 16 to 19, the first electrode 70 and the second electrode 80 are omitted for convenience of explanation. Further, in FIGS. 16 to 19, for convenience of explanation, the thickness of the semiconductor substrate 50 is shown to be approximately equal to the thickness of the insulating substrate 30. Further, in FIGS. 16 to 19, hatched lines are omitted for convenience of explanation.
  • the terahertz device 10 may include a through hole 17.
  • the through hole 17 penetrates each of the semiconductor substrate 50, the metal layer 40, and the insulating substrate 30 in the z direction.
  • the metal layer 40 may be formed to be recessed in the direction orthogonal to the z direction relative to the inner surfaces of the semiconductor substrate 50 and the insulating substrate 30 that constitute the through hole 17. Note that the number of through holes 17 can be changed arbitrarily.
  • the terahertz device 10 may have a configuration in which a via 18 is embedded in the through hole 17.
  • the vias 18 are exposed from both the device front surface 11 and the device back surface 12.
  • Via 18 may be in contact with metal layer 40 .
  • Via 18 may be electrically connected to, for example, a ground electrode (not shown). Further, the via 18 may be electrically connected to the second electrode 80. Thereby, the metal layer 40 is grounded. Note that the number of through holes 17 and vias 18 can be changed arbitrarily.
  • a through hole 54 may be formed in a part of the semiconductor substrate 50.
  • the through hole 54 penetrates the semiconductor substrate 50 in the z direction. Therefore, the through hole 54 exposes the metal layer 40.
  • a through hole may be formed in a part of the insulating substrate 30 instead of the semiconductor substrate 50. This through hole penetrates the insulating substrate 30 in the z direction. Therefore, the through hole of the insulating substrate 30 exposes the metal layer 40.
  • the number of through holes 54 in the semiconductor substrate 50 can be changed arbitrarily. Further, the number of through holes in the insulating substrate 30 can be changed arbitrarily.
  • a via may be provided in the through hole 54 or the through hole of the insulating substrate 30. The via may be in contact with the second electrode 80, for example. Thereby, the metal layer 40 is electrically connected to the second electrode 80.
  • the semiconductor substrate 50 may include a plurality of slits 55.
  • Each slit 55 extends from the substrate surface 51 of the semiconductor substrate 50 toward the substrate back surface 52.
  • the bottom surface of each slit 55 is provided at a position separated from the substrate back surface 52 in the z direction.
  • the insulating substrate 30 may include a plurality of slits 33.
  • Each slit 33 extends from the back surface 32 of the insulating substrate 30 toward the front surface 31.
  • the bottom surface of each slit 33 is provided at a position separated from the surface 31 in the z direction.
  • the number of slits 33 and 55 can be changed arbitrarily. In one example, there may be one slit 55. Further, the number of slits 33 may be one. Further, one of the slit 33 and the slit 55 may be omitted.
  • the side surface 43 of the metal layer 40 may be located more inward than both the substrate side surface 56 of the semiconductor substrate 50 and the side surface 34 of the insulating substrate 30.
  • the dicing blade can cut both the semiconductor substrate 850 and the insulating substrate 830 without cutting the metal layer 40, thereby achieving the singulation.
  • an insulating bonding material may be interposed between the metal layer 40 and the surface 31 of the insulating substrate 30.
  • the metal layer 40 is provided on the back surface 52 of the semiconductor substrate 50. In this way, the metal layer 40 does not need to also serve as a bonding layer.
  • an insulating bonding material may be interposed between the metal layer 40 and the back surface 52 of the semiconductor substrate 50.
  • the metal layer 40 is provided on the surface 31 of the insulating substrate 30. In this way, the metal layer 40 does not need to also serve as a bonding layer.
  • the term “on” includes the meanings of “on” and “over” unless the context clearly dictates otherwise. Therefore, the expression “A is formed on B” means that in each of the above embodiments, A can be placed directly on B by contacting B, but as a modification, A can be placed directly on B without contacting B. It is contemplated that it may be placed above the. That is, the term “on” does not exclude structures in which other members are formed between A and B.
  • the z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it need to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure are not limited to "up” and “down” in the z direction described herein to be “up” and “down” in the vertical direction.
  • the x direction may be a vertical direction
  • the y direction may be a vertical direction.
  • (Appendix A1) a semiconductor substrate (50) having a substrate surface (51) and a substrate back surface (52) opposite to the substrate surface (51); an active element (60) that is provided on the substrate surface (51) and that oscillates or detects electromagnetic waves; an insulating substrate (30) disposed on the back surface (52) side of the semiconductor substrate (50) and supporting the semiconductor substrate (50); a metal layer (40) disposed between the semiconductor substrate (50) and the insulating substrate (30) and in contact with the substrate back surface (52);
  • the semiconductor substrate (50) has a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave.
  • Terahertz device (10) Terahertz device (10).
  • Appendix A2 The terahertz device according to appendix A1, wherein the thickness (Ts1) of the semiconductor substrate (50) is 1/2 or less of the wavelength ( ⁇ ) of the electromagnetic wave.
  • Appendix A3 The terahertz device according to appendix A2, wherein the thickness (Ts1) of the semiconductor substrate (50) is less than 1/4 of the wavelength ( ⁇ ) of the electromagnetic wave.
  • Appendix A4 The terahertz device according to any one of appendices A1 to A3, wherein the thickness (Ts1) of the semiconductor substrate (50) is thicker than the thickness (Tm) of the metal layer (40).
  • Appendix A5 The terahertz device according to any one of appendices A1 to A4, wherein the insulating substrate (30) has higher rigidity than the semiconductor substrate (50).
  • Appendix A6 The terahertz device according to any one of appendices A1 to A5, wherein the thickness (Ts2) of the insulating substrate (30) is thicker than the thickness (Ts1) of the semiconductor substrate (50).
  • the metal layer (40) is a first metal layer (41) provided on the insulating substrate (30); A second metal layer (42) provided on the back surface (52) of the substrate, the terahertz device according to any one of appendices A1 to A6.
  • Appendix A8 The terahertz device according to any one of appendices A1 to A7, wherein the metal layer (40) is in an electrically floating state.
  • Appendix A9 The terahertz device according to any one of Appendices A1 to A8, wherein the semiconductor substrate (50) includes any one of InP, GaAs, and Si.
  • Appendix A10 The terahertz device according to any one of appendixes A1 to A9, wherein the insulating substrate (30) includes any one of AlN, SiC, Al 2 O 3 , Si, and SiO 2 .
  • (Appendix A12) comprising a first electrode (70) and a second electrode (80),
  • the active element (60) is electrically connected to the first electrode (70) and the second electrode (80),
  • the first electrode (70) and the second electrode (80) are a first electrode plate (73) and a second electrode plate (83) arranged to face each other so as to form a capacitor (91) electrically connected in parallel with the active element (60);
  • the terahertz device according to any one of appendices A1 to A11, comprising an antenna structure (90) that radiates or detects the electromagnetic waves.
  • a terahertz device (10) according to any one of Appendices A1 to A12, a dielectric (110) formed of a dielectric material and surrounding the terahertz device (10); a gas space (140) in which gas exists; It has a portion facing the terahertz device (10) via the dielectric (110) and the gas space (140), and has a portion that faces the terahertz device (10) through the dielectric (110) and the gas space.
  • a terahertz unit (100) comprising: a reflecting section (130) that reflects the electromagnetic waves propagated through the terahertz (140) in one direction.
  • a terahertz unit (200) comprising: a terahertz device (10) according to any one of appendices A1 to A12 mounted on the support substrate surface (211) within the transmission region (222).
  • (Appendix B1) providing a semiconductor substrate (850) having a substrate surface (851) and a substrate back surface (852) opposite to the substrate surface (851); cutting the semiconductor substrate (850) to reduce its thickness; Providing an active element (60) that oscillates or detects electromagnetic waves on the substrate surface (851); providing an insulating substrate (830) having a surface (831); forming a first metal layer (841) in contact with the surface (831); forming a second metal layer (842) in contact with the back surface (852) of the substrate; bonding the first metal layer (841) and the second metal layer (842), A method for manufacturing a terahertz device, wherein the cutting to reduce the thickness of the semiconductor substrate (850) involves cutting the semiconductor substrate (850) to a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave.
  • the semiconductor substrate (850) In cutting the semiconductor substrate (850) so as to reduce its thickness, the semiconductor substrate (850) is cut to a thickness of 1/2 or less of the wavelength ( ⁇ ) of the electromagnetic wave. Method of manufacturing the device.
  • Appendix B3 Terahertz according to appendix B2, in which the semiconductor substrate (850) is cut to a thickness that is less than 1/4 of the wavelength ( ⁇ ) of the electromagnetic wave, in cutting the semiconductor substrate (850) so as to reduce its thickness.
  • a support substrate (900) is provided in contact with the substrate surface (851), The method for manufacturing a terahertz device according to any one of appendices B1 to B3, wherein the support substrate (900) is removed after the first metal layer (841) and the second metal layer (842) are bonded.
  • Appendix B5 The method for manufacturing a terahertz device according to any one of appendices B1 to B4, wherein cutting the semiconductor substrate (850) to reduce its thickness includes mirror polishing the back surface of the substrate (852).
  • a terahertz device (10) that emits or detects electromagnetic waves; a dielectric (110) formed of a dielectric material and surrounding the terahertz device (10); a gas space (140) in which gas exists; It has a portion that faces the terahertz device (10) via the dielectric (110) and the gas space (140), and has a portion that is generated from the terahertz device (10) and is connected to the dielectric (110) and the gas space.
  • the terahertz device (10) includes: a semiconductor substrate (50) having a substrate surface (51) and a substrate back surface (52) opposite to the substrate surface (51); an active element (60) that is provided on the substrate surface (51) and that oscillates or detects the electromagnetic wave; an insulating substrate (30) disposed on the back surface (52) side of the semiconductor substrate (50) and supporting the semiconductor substrate (50); a metal layer (40) disposed between the semiconductor substrate (50) and the insulating substrate (30) and in contact with the substrate back surface (52);
  • the semiconductor substrate (50) has a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave.
  • Terahertz unit (100) has a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave.
  • the terahertz device (10) includes: a semiconductor substrate (50) having a substrate surface (51) and a substrate back surface (52) opposite to the substrate surface (51); an active element (60) that is provided on the substrate surface (51) and that oscillates or detects the electromagnetic wave; an insulating substrate (30) disposed on the back side (52) of the semiconductor substrate (50) and facing the support substrate surface (211); a metal layer (40) disposed between the semiconductor substrate (50) and the insulating substrate (30) and in contact with the substrate back surface (52);
  • the semiconductor substrate (50) has a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave.
  • Terahertz unit (200) has a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave.
  • Appendix C3 The terahertz unit according to appendix C1 or C2, wherein the thickness (Ts1) of the semiconductor substrate (50) is 1/2 or less of the wavelength ( ⁇ ) of the electromagnetic wave.
  • Appendix C4 The terahertz unit according to appendix C3, wherein the thickness (Ts1) of the semiconductor substrate (50) is less than 1/4 of the wavelength ( ⁇ ) of the electromagnetic wave.
  • first substrate side metal layer (40) disposed between the first semiconductor substrate (50A) and the insulating substrate (30) and in contact with the first substrate back surface (52); a second substrate side metal layer (40) disposed between the second semiconductor substrate (50B) and the insulating substrate (30) and in contact with the second substrate back surface (52); Both the first semiconductor substrate (50A) and the second semiconductor substrate (50B) have a thickness less than the wavelength ( ⁇ ) of the electromagnetic wave. Terahertz unit.
  • Appendix C6 The terahertz unit according to appendix C5, wherein the thickness of both the first semiconductor substrate (50A) and the second semiconductor substrate (50B) is 1/2 or less of the wavelength ( ⁇ ) of the electromagnetic wave.
  • Appendix C7 The terahertz unit according to appendix C6, wherein the thickness of both the first semiconductor substrate (50A) and the second semiconductor substrate (50B) is less than 1/4 of the wavelength ( ⁇ ) of the electromagnetic wave.
  • First electrode plate 74 First electrode pad 80...Second electrode 81...Second conductive part 82...Second wiring part 83...Second electrode plate 83a...Protrusion part 84...Second electrode pad 85...Contact part 90...Antenna structure 91...Capacitor DESCRIPTION OF SYMBOLS 100... Terahertz unit 110... Dielectric material 120... Antenna base 121... Base surface 122... Antenna recessed part 123... Antenna surface 130... Reflection film 140... Gas space 151, 152... External electrode 161, 162... Conductive part 171, 172...
  • Bump 200 ...Terahertz unit 210...Support substrate 211...Substrate surface 212...Board back surface 213...Power supply line 214...External electrode 215...Connection conductor 220...Waveguide 221...Through hole 222...Transmission area 300
  • 310 ...Insulating substrate 830 ...Insulating substrate 831...Surface 840...Metal layer 841...First metal layer 841A...First metal film 841B...Second metal film 842...Second metal layer 842A...Third metal film 842B...Fourth metal film 850...Semiconductor substrate 851...Substrate surface 852...Substrate back surface 900...Support substrate W...Wire RTD...Resonant tunnel diode P1...Oscillation point P2...Radiation point Ts1...Thickness of semiconductor substrate Ts2...Thickness of insulating substrate Tm...Thickness of metal layer L

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

La présente invention concerne un dispositif térahertz qui comprend : un substrat semi-conducteur qui a une surface avant de substrat et une surface arrière de substrat qui est située sur le côté opposé à la surface avant de substrat ; un élément actif qui est disposé sur la surface avant de substrat et qui oscille ou détecte des ondes électromagnétiques ; un substrat d'isolation qui est disposé sur le côté de surface arrière de substrat du substrat semi-conducteur et qui supporte le substrat semi-conducteur ; et une couche métallique qui est disposée entre le substrat semi-conducteur et le substrat d'isolation et qui est en contact avec la surface arrière de substrat. Le substrat semi-conducteur a une épaisseur inférieure à la longueur d'onde des ondes électromagnétiques.
PCT/JP2023/019264 2022-05-25 2023-05-24 Dispositif térahertz WO2023228965A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022085481 2022-05-25
JP2022-085481 2022-05-25

Publications (1)

Publication Number Publication Date
WO2023228965A1 true WO2023228965A1 (fr) 2023-11-30

Family

ID=88919340

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/019264 WO2023228965A1 (fr) 2022-05-25 2023-05-24 Dispositif térahertz

Country Status (1)

Country Link
WO (1) WO2023228965A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278366A (ja) * 2005-03-28 2006-10-12 Canon Inc 電磁波発生・検出素子、およびその製造方法
JP2013057719A (ja) * 2011-09-07 2013-03-28 Panasonic Corp 光モジュール
JP2016111542A (ja) * 2014-12-08 2016-06-20 ローム株式会社 テラヘルツ素子およびその製造方法
JP2016213732A (ja) * 2015-05-12 2016-12-15 ローム株式会社 テラヘルツ素子モジュール
JP2018507534A (ja) * 2014-12-17 2018-03-15 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク テラヘルツ波用光伝導アンテナ、光伝導アンテナ製造方法及びテラヘルツ時間領域分光システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278366A (ja) * 2005-03-28 2006-10-12 Canon Inc 電磁波発生・検出素子、およびその製造方法
JP2013057719A (ja) * 2011-09-07 2013-03-28 Panasonic Corp 光モジュール
JP2016111542A (ja) * 2014-12-08 2016-06-20 ローム株式会社 テラヘルツ素子およびその製造方法
JP2018507534A (ja) * 2014-12-17 2018-03-15 サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィク テラヘルツ波用光伝導アンテナ、光伝導アンテナ製造方法及びテラヘルツ時間領域分光システム
JP2016213732A (ja) * 2015-05-12 2016-12-15 ローム株式会社 テラヘルツ素子モジュール

Similar Documents

Publication Publication Date Title
US11569184B2 (en) Terahertz device
US8077107B2 (en) Antenna apparatus
US10066984B2 (en) Terahertz device module
US20230378640A1 (en) Terahertz element and semiconductor device
US11811365B2 (en) Terahertz device and method for manufacturing terahertz device
WO2022024749A1 (fr) Dispositif térahertz
WO2021070921A1 (fr) Dispositif térahertz
JP7317632B2 (ja) 素子、画像形成装置
US12099005B2 (en) Terahertz device
JP2019033464A (ja) テラヘルツ波を発生するためのテラヘルツユニット
WO2023228965A1 (fr) Dispositif térahertz
WO2024009769A1 (fr) Dispositif térahertz
JP7393897B2 (ja) テラヘルツ装置
US10957598B2 (en) Terahertz device
JP7577675B2 (ja) テラヘルツ装置
JP7577658B2 (ja) テラヘルツ装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23811837

Country of ref document: EP

Kind code of ref document: A1