WO2023224546A1 - Laser à semi-conducteur, dispositif électronique et procédé de fabrication d'un laser à semi-conducteur - Google Patents

Laser à semi-conducteur, dispositif électronique et procédé de fabrication d'un laser à semi-conducteur Download PDF

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Publication number
WO2023224546A1
WO2023224546A1 PCT/SG2023/050267 SG2023050267W WO2023224546A1 WO 2023224546 A1 WO2023224546 A1 WO 2023224546A1 SG 2023050267 W SG2023050267 W SG 2023050267W WO 2023224546 A1 WO2023224546 A1 WO 2023224546A1
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Prior art keywords
grating
semiconductor laser
layer sequence
bragg reflector
layer
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PCT/SG2023/050267
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English (en)
Inventor
Wei Ting Chen
Feng Zhao
Baiming Guo
Qing Wang
Amtout ABDENOUR
Jean Francois Seurin
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Ams-Osram Asia Pacific Pte. Ltd.
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Publication of WO2023224546A1 publication Critical patent/WO2023224546A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface

Definitions

  • SEMICONDUCTOR LASER ELECTRONIC DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR LASER
  • the following relates to a semiconductor laser, an electronic device and a method of manufacturing a semiconductor laser.
  • One aspect relates to polarization control of said semiconductor laser.
  • Sub-wavelength gratings are gratings with a period of less than a wavelength of light and no non-zero order diffraction.
  • SWGs can function as wave plates, polarizers, narrow wavelength filters, anti-reflection coating, or phase modulators.
  • One advantage of SWGs relates to their thickness, which can be a fraction of a wavelength (e.g., some 100 nm) , rather than millimeters as in conventional bulk optical elements.
  • Another advantage is that SWGs can be made of amorphous materials and, thus, can be monolithically integrated on a wafer. This renders SWGs well suited for integration with semiconductor lasers, such as vertical cavity surface emitting lasers, or VCSELs for short. Such integration can lead to functions such as enhancing and switching of a VCSEL's polarization.
  • VCSELs VCSELs
  • Polarization- maintained semiconductor lasers are essential for many sensing applications. Efforts have been made to control the polarization but may involve a direct alteration of the laser cavity, making it difficult to obtain uniformity and simplicity in processing. It is more desirable to obtain polarization control without significantly changing the cavity structure.
  • a widely used approach to control polarization is to pattern a sub-wavelength grating on the top-most layer of a VCSEL' s distributed Bragg reflector, DBR. This usually leads to a polarization extinction ratio, i.e.
  • the power ratio of a linear polarization state to its orthogonal polarization state of around 20 dB .
  • the grating depth is usually very shallow, i.e. below about 100 nm, which brings fabrication challenges.
  • these polarization- maintained VCSELs were developed for wavelengths of about 860 to 940 nm only.
  • FIG. 7 shows exemplary embodiments from the prior art.
  • the overview shows four configurations that have been proposed in the art to control the polarization state of VCSELs.
  • the first one (1) is the most feasible because the grating is integrated on top of a DBR, while a SWG in the second one (2) is floating.
  • the grating is underneath, introducing difficulties in epitaxial growth, and in the last one (4) the grating is not integrated.
  • the key element among the four configurations is a SWG, which introduces a reflectivity difference to linear polarization states. This leads to different gains within the VCSEL cavity to only allow the VCSEL to emit a certain linear polarization .
  • Figure 8 shows one exemplary embodiment from the prior art in more detail.
  • This drawing relates to the first example (1) above and shows a semiconductor laser comprising a substrate 10, a first Bragg reflector layer sequence on said substrate 20, an active layer sequence 21 on said first Bragg reflector layer sequence and a second Bragg reflector layer sequence 22 on said active layer sequence.
  • a X/4-thick DBR layer is etched away.
  • a grating region 40 has lower reflectivity when light is x-polarized.
  • a X/2- thick DBR layer is etched away. The grating region has higher reflectivity when light is x-polarized.
  • the grating 40 constitutes a layer with polarization-dependent effective indices that are both higher than the index of air but lower than the index of the grating material.
  • incident light is polarized perpendicular to the grating's long axis, it results in a lower effective index.
  • perpendicular polarization in (a) corresponds to higher reflectivity compared with the region without grating.
  • perpendicular polarization in (b) shows a lower effective index leading to higher reflectivity.
  • Figure 9 shows a reflectivity from the exemplary embodiments from the prior art.
  • the graph on the left relates to embodiment (a) and the graph on the right relates to embodiment (b) in Figure 8.
  • the maximal reflectivity difference could be only up to 3%.
  • an object to be achieved is to provide a semiconductor laser that overcomes the aforementioned limitations and provides authentication with an improved level of security.
  • a further object is to provide an electronic device comprising such a semiconductor laser and a method of manufacturing a semiconductor laser .
  • One aspect relates to control of polari zation of a semiconductor laser by patterning a specially designed grating, such that an extinction ratio larger than 20 can be achieved .
  • a sub-wavelength meta-grating can be used on a VCSEL for superior extinction ratio .
  • a polari zation-maintained VCSEL may comprise an amorphous silicon meta-grating on a layer of SiO2 on its dielectric DBR .
  • a semiconductor laser comprises a substrate , a first Bragg reflector layer sequence on said substrate , an active layer sequence on said first Bragg reflector layer sequence and a second Bragg reflector layer sequence on said active layer sequence .
  • Said components form a laser which, in operation, generates laser radiation in a lasing process and is operable to emit a beam of laser radiation .
  • laser beam emission occurs perpendicular from the top surface of the first or second Bragg reflector layer sequence .
  • the semiconductor laser comprises a spacer layer and a grating .
  • the grating comprises a periodic pattern and is positioned on the spacer layer and in a direction of the beam of laser radiation .
  • the generated laser beam may be generated with different polarized modes.
  • the grating is operable to stabilize one polarization mode over the other and, thus, stabilize the laser process such that a desired polarization mode is maintained.
  • the grating can be considered as a layer with polarization-dependent effective indices of refraction. This leads to different gains within the semiconductor cavity to only, or predominantly, allow a laser beam with a certain polarization to be emitted.
  • the spacer layer further increases the reflectivity difference associated with the different polarization states, as it introduces another layer with an effective index of refraction as compared to the grating.
  • the grating is directly arranged on the spacer layer.
  • the grating can be arranged to have layers having effective indices of refraction that are higher than the index of air but lower than the index of the grating material.
  • incident light is polarized perpendicular to the grating's long axis, it results in a lower effective index.
  • perpendicular polarization corresponds to higher reflectivity compared with the region without grating.
  • perpendicular polarization shows a lower effective index leading to higher reflectivity .
  • the proposed design of the grating on the spacer layer shows a very high reflectivity difference of near 10%, or more.
  • Polarization extinction ratio e.g., the power ratio of a linear polarization state to its orthogonal polarization state, can be tuned to around 20 dB, and more.
  • the proposed concept can be applied to various semiconductor lasers, including VCSELs .
  • VCSELs semiconductor lasers
  • a long-wavelength VCSEL configuration e.g. 1380 nm
  • the same configuration can be used for other wavelength VCSELs.
  • the integrated grating and spacer layers allow for widespread applications which benefit from polarization-maintained laser emission including behind- display sensing, artificial or virtual reality (AR/VR) , and LiDAR, to name but a few.
  • AR/VR artificial or virtual reality
  • LiDAR LiDAR
  • the semiconductor laser can be considered to comprise an epitaxial structure or stack, which includes the active layer sequence (e.g., a resonant cavity with a gain region) disposed between the Bragg reflector layer sequences, where at least one reflector is partially reflective in order to allow the output beam to leave the device.
  • the active layer sequence e.g., a resonant cavity with a gain region
  • the Bragg reflector layer sequences comprise a multiplicity of layer pairs, in each case each pair comprises a layer having a high refractive index and a layer having a low refractive index.
  • the layers may have a thickness that corresponds to the optical path length of X/4, with X denoting the emission wavelength of the semiconductor laser.
  • the layer pairs may be based on AlGaAs with different concentration of aluminum.
  • a substrate material may be GaAs or any other suitable semiconductor material.
  • the active layer sequence typically comprises multiple quantum wells as an active medium.
  • the DRB may comprise III-V materials with the condition that the index of refraction times the thickness of each DBR layer equals X/4.
  • the first Bragg reflector layer sequence, the active layer sequence and/or the second Bragg reflector layer sequence comprise the spacer layer with the grating.
  • the spacer layer with the grating arranged thereon, e.g. arranged directly on it can be placed anywhere in the stack formed by the first Bragg reflector layer sequence, the active layer sequence and the second Bragg reflector layer sequence.
  • the spacer layer with the grating can be freestanding, i.e. integrated with the stack but "floating" at a distance, or integrated in the stack, e.g. as an additional layer of the first or second Bragg reflector layer sequence, or be attached to the stack.
  • the actual design may account for the position of the spacer layer with the grating with respect to the stack.
  • the spacer layer and the grating are arranged on top of the first and/or second Bragg reflector layer sequence.
  • This embodiment may be the most feasible one because it is integrated on top of the DBR and has shown high extinction ratios and, thus, polarization reflectivity.
  • the grating depth may be considerably shallow, e.g. below about 100 nm, which brings fabrication challenges if the grating were to be integrated into the DBR.
  • the spacer layer and the grating are arranged or integrated on top of the DBR and provide a much higher reflectivity difference, e.g. between a pair of orthogonal linearly polarized states.
  • the spacer layer serves as an etch stop layer for precise control of grating depth because etching selectivity can easily exceed a value of 20.
  • the grating is a sub-wavelength grating SWG.
  • the SWT constitutes a grating with a period less than the wavelength of light and no non-zero order diffraction. Due to its small dimensions and form factor it lends itself to integration into the semiconductor laser, e.g. by means of CMOS technology.
  • the grating comprises a grating layer and grating elements.
  • the grating layer has a high index of refraction material as compared to the spacer layer which has a low index of refraction material.
  • the difference in high index of refraction and low index of refraction supports a high reflectivity difference of different polarization states.
  • a desired polarization can be favored at the expense of another. This leads to different gains within the laser cavity to only allow a certain polarization to be emitted.
  • the grating elements are etched into a grating layer.
  • the grating layer may be the outermost layer of the semiconductor laser and integrated on the epitaxial structure. Etching allows the grating layer to be patterned with grating elements with well-controlled technology at wafer-level.
  • SWG structures can be patterned by electron beam lithography followed by AI2O3 deposition, lift-off and dry etching using chlorine gases.
  • electron beam lithography can be exchanged by an i-line stepper.
  • Feature size of the grating elements can be some ⁇ 450 nm, which is well within the reach of an i-line stepper.
  • the grating comprises a plurality of unit cells, which together form the grating.
  • the unit cells comprise grating elements having slanted angles with respect to a surface normal of the grating.
  • the grating elements show increased reflectivity due to their specific geometry, i.e. the slanted angles. Increased reflectivity further translates into different gains within the laser cavity to only allow a certain polarization to be emitted .
  • a unit cell of one period of the grating comprises at least two different grating elements with different slanted angles and/or different widths.
  • the different slanted angles provide a design property to adjust reflectivity to the respective polarization states.
  • two grating elements of different slanted angles are separated by a gap in a unit cell.
  • Said two grating elements have a trapezoidal geometry with different widths.
  • the spacer layer has depth tl and the grating layer has depth t2.
  • the grating comprises amorphous silicon and the spacer layer comprises silicon dioxide.
  • These materials feature a large difference in effective index of refraction and can be used to integrate the grating and spacer into the semiconductor laser, e.g. by means of CMOS technology.
  • the materials are compatible with infrared applications, e.g. a design wavelength of 1375 nm of a VCSEL.
  • the grating is configured for linear polarization and/or circular polarization.
  • the first Bragg reflector layer sequence, the active layer sequence and the second Bragg reflector layer sequence essentially form a vertical-cavity surface-emitting laser, VCSEL.
  • VCSELs feature a beam emission that is perpendicular to a main extension plane of a top surface of the VCSEL.
  • the VCSEL diode can be formed from semiconductor layers on a substrate, wherein the semiconductor layers comprise two distributed Bragg reflectors (DBR) enclosing active region layers there between and thus forming a cavity.
  • DBR distributed Bragg reflectors
  • VCSELs and their principle of operation are a well-known concept and are not further explained in this disclosure.
  • the VCSEL diode is configured to have an emission wavelength of 940 nm, 850 nm, or another natural wavelength.
  • the VCSEL diode can be configured to emit coherent laser light when forward biased, for instance.
  • an electronic device comprises at least one semiconductor laser according to the aforementioned aspects .
  • the semiconductor laser is arranged inside a host system .
  • the host system can be a display, an arti ficial or virtual reality enabled device , or a LiDAR system, for example .
  • a method of manufacturing a semiconductor laser comprises the step of providing an epitaxial structure , or stack, which includes an active layer sequence (e . g . , a resonant cavity with a gain region) disposed between a first and second Bragg reflector layer sequence , wherein at least one reflector is partially reflective in order to allow an output beam of laser radiation to leave the device .
  • a spacer layer is provided with the stack and with a grating .
  • the grating comprises a periodic pattern and is positioned on the spacer layer in a direction of the beam of laser radiation .
  • the grating can be manufactured as a SWG and may be composited of a spacer layer from amorphous silicon prepared by chemical vapor deposition .
  • the grating or SWG elements can be patterned by electron beam lithography followed by AI2O3 deposition, li ft-of f and dry etching using chlorine gases .
  • the use of electron beam lithography is optional .
  • an i-line stepper process can be used .
  • the feature si ze of the grating can be in the range of ⁇ 450 nm, and is thus capable of being fabricated by i-line stepper . Further embodiments of the method become apparent to the skilled reader from the aforementioned embodiments of the semiconductor laser and of the electronic device , and vice- versa .
  • Figure 1 shows an exemplary embodiment of a semiconductor laser
  • Figure 2 shows a polari zation-dependent reflectivity for an exemplary embodiment of a semiconductor laser
  • Figure 3 shows an optical image of an exemplary embodiment of a semiconductor laser
  • Figure 4 shows experimental results of an exemplary embodiment of a semiconductor laser
  • Figure 5 shows experimental results of polari zation state analysis
  • Figure 6 shows further experimental results of polari zation state analysis
  • Figure 7 shows exemplary embodiments from the prior art
  • Figure 8 shows one exemplary embodiment from the prior art in more detail
  • Figure 9 shows a reflectivity from the exemplary embodiments from the prior art .
  • FIG. 1 shows an exemplary embodiment of a semiconductor laser .
  • the semiconductor laser comprises an epitaxial structure , or stack, which includes a substrate 10 , a first Bragg reflector layer sequence on said substrate 20 , an active layer sequence 21 on said first Bragg reflector layer sequence and a second Bragg reflector layer sequence 22 on said active layer sequence . At least one reflector is partially reflective in order to allow the output beam to leave the laser during operation .
  • a spacer layer 30 and a grating 40 are arranged on the first Bragg reflector layer sequence 20 . In other words , the spacer layer with the grating is integrated on top of the first Bragg reflector layer sequence , so that the spacer layer is between the grating and the first Bragg reflector layer sequence .
  • the epitaxial structure forms a VCSEL with a design wavelength of 1375 mm, for example .
  • the grating 40 comprises a grating layer 41 and a periodic pattern of grating elements 42, 43, which are positioned on the spacer layer 30 and in a direction of the beam of laser radiation.
  • the grating layer comprises a layer of amorphous silicon, which has a comparably high index of refraction.
  • the spacer layer comprises a layer of SiCh, which has a lower index of refraction than the grating layer.
  • the drawing shows a unit cell 44 of the grating arranged on the spacer layer 30 and the first Bragg reflector layer sequence 20.
  • a unit cell comprises two grating elements 42, 43, which are both shaped as trapezoids.
  • the grating elements have the same slanted angle, i.e. slanted with respect to a surface normal of the grating layer (and, thus, the same surface normal of the spacer layer and the epitaxial structure) .
  • the grating elements each have a base width and a top width. In this example, the top widths are bigger than the base widths.
  • a pair of grating elements in a unit cell (or neighboring grating elements) are separated by a distance, denoted as "gap".
  • the widths w of such neighboring grating elements are different by a value denoted as "diff".
  • the unit cell 44 has a width of 2*p, wherein p denotes the period of the grating.
  • the first grating element 42 has a center point 45 which is positioned at a distance of p/2 from the border 46 of the unit cell.
  • the second grating element 43 has a center point 46 which is positioned at a distance of p/2 + wl/2 + gap + (wl+diff) /2.
  • a depth of the spacer layer 30 and grating layer 41 are denoted as tl and t2, respectively .
  • the grating 40 is a sub-wavelength grating and the denoted parameters are set to appropriate values to define such a grating.
  • Figure 2 shows a polarization-dependent reflectivity for an exemplary embodiment of a semiconductor laser.
  • the diagram shows a 0 th order reflectivity (in %) as a function of wavelength (in nm) .
  • Two graphs xpol and ypol are shown, which correspond to incident polarization perpendicular to the grating's long axis (xpol) and incident polarization parallel to the grating's long axis (ypol) .
  • the grating is a sub-wavelength grating with layers 30, 40 having large difference in effective indices of refraction.
  • incident light is polarized perpendicular to the grating's long axis, it results in a lower effective index.
  • perpendicular polarization corresponds to higher reflectivity compared with the region without grating.
  • perpendicular polarization shows a lower effective index leading to higher reflectivity. This is further supported by the shape and distance of the grating elements.
  • Polarization extinction ratio e.g., the power ratio of a linear polarization state to its orthogonal polarization state
  • Polarization extinction ratio can be tuned to around 20 dB, and more.
  • the proposed concept can be applied to various semiconductor lasers, including VCSELs .
  • VCSELs semiconductor lasers
  • a long-wavelength VCSEL configuration e.g. 1380 nm
  • the same configuration can be scaled and used for other wavelength VCSELs and both linear and circular polarization.
  • Figure 3 shows an optical image of an exemplary embodiment of a semiconductor laser.
  • the Figure shows an optical image of a fabricated SWG on a VCSEL with the set of structure parameters introduced above.
  • the SWG is composited of amorphous silicon prepared by chemical vapor deposition.
  • the SWG structures were patterned by electron beam lithography followed by AI2O3 deposition, lift-off and dry etching using chlorine gases.
  • the use of electron beam lithography is just for ease of demonstration. Future mass-production can be done by an i-line stepper.
  • the feature size of the grating is ⁇ 450 nm, capable of being fabricated by i-line stepper.
  • Figure 4 shows experimental results of an exemplary embodiment of a semiconductor laser.
  • the Figure shows a proof of principle of a fabricated SWG on a VCSEL with the set of structure parameters introduced above. Both images on the top have been recorded through a polarizer. On the left the polarizer axis is perpendicular to the grating and on the right the polarizer axis is parallel to the grating. The emission that is shown in the images already seems quite different in intensity, indicating a large reflection difference .
  • Figure 5 shows experimental results of polarization state analysis. The results have been obtained for a SWG on a VCSEL with the set of structure parameters introduced above and a polarimeter.
  • the polarimeter measures the state of polarization (SOP) of collimated input light using the rotating-wave-plate method.
  • SOP state of polarization
  • Optical input is monochromatic coherent light from the VCSEL and the light terminates inside the module.
  • the measurements are plotted on a polarization ellipse (see graphs on the top) and in tabulated format on the bottom.
  • the plots on the top show a dominant polarization state. This is also reflected in the table, which indicates the power measured in x and y polarization states. The resulting extinction ratio is in the order of 25 dB for various operating currents of the VCSEL.
  • Figure 6 shows further experimental results of polarization state analysis.
  • the results have been obtained for a SWG on a VCSEL, with the set of structure parameters introduced above, and a polarimeter.
  • the plots correspond to the VCSEL with the SWG (on the left) and the VCSEL without the SWG.
  • the plot on the left again shows the dominant polarization state while, without grating, the polarization ellipse shows components for both x and y polarization.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Un laser à semi-conducteur est utilisable pour émettre un faisceau de rayonnement laser. Le laser comprend un substrat (10), une première séquence de couche de réflecteur de Bragg (20) sur ledit substrat (10), une séquence de couche active (21) sur ladite première séquence de couche de réflecteur de Bragg (20) et une deuxième séquence de couche de réflecteur de Bragg (22) sur ladite séquence de couche active (21). Une couche d'espacement (30) avec un réseau (40) comprenant un motif périodique est positionnée sur la couche d'espacement (30) et dans une direction du faisceau de rayonnement laser.
PCT/SG2023/050267 2022-05-18 2023-04-20 Laser à semi-conducteur, dispositif électronique et procédé de fabrication d'un laser à semi-conducteur WO2023224546A1 (fr)

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US20090097522A1 (en) * 2006-02-03 2009-04-16 John Justice Vertical cavity surface emitting laser device
US20170256915A1 (en) * 2016-03-04 2017-09-07 Princeton Optronics, Inc. High-Speed VCSEL Device
US20190103727A1 (en) * 2017-03-23 2019-04-04 Samsung Electronics Co., Ltd. Vertical cavity surface emitting laser including meta structure reflector and optical device including the vertical cavity surface emitting laser
US20210167580A1 (en) * 2019-11-29 2021-06-03 Pinnacle Photonics (Us), Inc. Top emitting vcsel array with integrated gratings

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WEN DANDAN ET AL: "Polarization State Generation and Detection by VCSELs with Integrated Metasurfaces", 2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), OSA, 10 May 2020 (2020-05-10), pages 1 - 2, XP033823930 *

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