WO2023221069A1 - 振动传感器以及麦克风 - Google Patents

振动传感器以及麦克风 Download PDF

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Publication number
WO2023221069A1
WO2023221069A1 PCT/CN2022/094006 CN2022094006W WO2023221069A1 WO 2023221069 A1 WO2023221069 A1 WO 2023221069A1 CN 2022094006 W CN2022094006 W CN 2022094006W WO 2023221069 A1 WO2023221069 A1 WO 2023221069A1
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WIPO (PCT)
Prior art keywords
vibration
cavity
beams
piezoelectric
vibration sensor
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Ceased
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PCT/CN2022/094006
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English (en)
French (fr)
Inventor
袁永帅
齐心
廖风云
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Shenzhen Shokz Co Ltd
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Shenzhen Shokz Co Ltd
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Publication date
Application filed by Shenzhen Shokz Co Ltd filed Critical Shenzhen Shokz Co Ltd
Priority to EP22942109.4A priority Critical patent/EP4408020A4/en
Priority to PCT/CN2022/094006 priority patent/WO2023221069A1/zh
Priority to CN202280070393.6A priority patent/CN118120258A/zh
Publication of WO2023221069A1 publication Critical patent/WO2023221069A1/zh
Priority to US18/639,803 priority patent/US20240268233A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/10—Resonant transducers, i.e. adapted to produce maximum output at a predetermined frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/04—Networks or arrays of similar microstructural devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304—Beam type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/24—Structural combinations of separate transducers or of two parts of the same transducer and responsive respectively to two or more frequency ranges
    • H04R1/245—Structural combinations of separate transducers or of two parts of the same transducer and responsive respectively to two or more frequency ranges of microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H04R17/025—Microphones using a piezoelectric polymer

Definitions

  • This specification relates to the field of sensors, and in particular, to a vibration sensor and a microphone.
  • diaphragm and mass structure or cantilever beam and mass structure are widely used in vibration sensors such as accelerometers, speakers, gyroscopes, energy harvesters, bone conduction microphones, and air conduction microphones.
  • a microphone uses a diaphragm and mass block structure or a cantilever beam and mass block structure in a vibration sensor to receive external vibration excitation, convert the vibration excitation into an electrical signal, and output the electrical signal after processing by the back-end circuit, thereby performing sound signal processing. collection.
  • Air conduction microphones can collect air vibrations caused by the user when making sounds and convert the air vibrations into electrical signals.
  • Bone conduction microphones can collect mechanical vibrations in bones and skin caused by the user's speech and convert the mechanical vibrations into electrical signals. Higher sensitivity and a wider frequency response range to vibration excitation have always been the goals pursued by vibration sensors. However, due to the characteristics of the vibration system, the sensitivity after the resonant peak will attenuate sharply, and the higher the resonant frequency, the lower the sensitivity will generally be, making it difficult for a single resonant peak vibration sensor to achieve both high sensitivity and wide frequency band characteristics. At the same time, a single resonance peak often cannot meet the needs. The multi-resonant peak vibration sensors in the prior art have complex structures and high processing difficulty, resulting in higher costs and lower accuracy.
  • This manual provides a vibration sensor and microphone with a wider frequency response range, higher sensitivity and simple structure.
  • this specification provides a vibration sensor, including a base and a plurality of vibration beams, the base including a cavity; the plurality of vibration beams are arranged in sequence on the base, wherein each vibration beam It includes a fixed end and a moving end.
  • the fixed end is located at both ends of the vibration beam and is connected to the base; the moving end is connected to the fixed end and is located between the fixed ends and suspended in the air.
  • each of the vibrating beams suspended on the cavity has different sizes and different natural frequencies.
  • Each of the vibrating beams responds to external vibration excitation to generate a signal including its corresponding natural frequency. The vibration signal within the sub-target frequency window.
  • multiple sub-target frequency windows corresponding to the multiple vibration beams cover different frequency ranges, and the multiple sub-target frequency windows constitute a target frequency window.
  • multiple natural frequencies corresponding to the multiple vibration beams are evenly distributed within the target frequency window.
  • the size of the cavity in the first direction changes along the second direction
  • the plurality of vibration beams are arranged on the base along the second direction
  • the fixed end is arranged along the second direction.
  • the first direction is connected to the base.
  • the size of the cavity in the first direction, the position of each vibrating beam on the cavity, and the size of each vibrating beam satisfy preset rules, such that The natural frequency of each vibrating beam satisfies a preset value.
  • the mobile end generates deformation in response to the vibration excitation
  • the mobile end includes a piezoelectric sensing component and a connecting beam
  • the piezoelectric sensing component converts the deformation into the vibration signal.
  • the vibration signal includes an electrical signal; the connecting beam is connected to the piezoelectric sensing component.
  • the distance between the piezoelectric sensing component and one of the fixed ends is in the range of one quarter to three quarters of the length of the moving end.
  • the moving end includes: two piezoelectric sensing components, respectively close to both ends of the fixed end, and the distance between each piezoelectric sensing component and the fixed end close to it is less than 1/4 of the length of the mobile end.
  • the piezoelectric sensing component includes at least one of a piezoelectric single crystal structure and a piezoelectric double crystal structure.
  • each vibration beam further includes a counterweight connected to the moving end, wherein the moving end generates deformation in response to the vibration excitation, and the counterweight generates a deformation based on the deformation. Displacement.
  • the size of the cavity in the first direction, the position of each vibration beam on the cavity, the size of each vibration beam, and the size of the counterweight The size satisfies the preset rules so that the natural frequency of each vibrating beam satisfies the preset value.
  • the size of the counterweights matches the natural frequencies of their corresponding vibration beams, such that the deviation of the vibration signals of the multiple vibration beams at their corresponding natural frequencies is within within the preset deviation range.
  • this specification also provides a microphone, including a housing, the vibration sensor described in the first aspect of this specification, and a signal synthesis circuit.
  • the vibration sensor is installed in the housing, and the base and the The shell is fixedly connected; the signal synthesis circuit is connected with the plurality of vibration beams, collects the vibration signal during operation, and performs signal synthesis processing on the vibration signal to generate a vibration signal within the target frequency window, wherein, Multiple sub-target frequency windows corresponding to the multiple vibration beams cover different frequency ranges, and the multiple sub-target frequency windows constitute the target frequency window.
  • the vibration sensor and microphone fix the two ends of the vibration beam on the base, while the middle part is suspended in the cavity and deforms in response to external vibration excitation.
  • the vibration sensor and microphone change the structure and size of the cavity and the size and position of the vibration beam, so that the sizes of the parts of the multiple vibration beams suspended on the cavity are different, so that different vibration beams have different natural frequencies. Resonant peaks of different frequencies are generated under vibration excitation.
  • Multiple vibration beams can generate multiple vibration signals in different frequency ranges, and multiple vibration signals in different frequency ranges together constitute a wide-band vibration signal, thereby making the frequency response range of the vibration sensor wider.
  • the vibration signal selected by the vibration sensor and the microphone is a vibration signal within a preset range near the resonance peak, so its sensitivity is higher.
  • the vibration sensor and microphone achieve the purpose of multiple resonant peaks and wide frequency bands by designing the size of the base cavity. They have a simple structure, low processing difficulty, low processing cost and higher precision. The vibration signal collection results more acurrate.
  • Figure 1 shows a side view of a vibration sensor provided according to an embodiment of this specification
  • Figure 2 shows a front view of a vibration sensor provided according to an embodiment of this specification
  • Figure 3 shows a top view of a vibration sensor provided according to an embodiment of this specification
  • Figure 4 shows a right view of a vibration sensor provided according to an embodiment of this specification
  • Figure 5 shows a cross-sectional view A-A of Figure 2
  • Figure 6 shows a schematic diagram of a piezoelectric single crystal structure provided according to an embodiment of this specification
  • Figure 7 shows a schematic diagram of a piezoelectric twin structure provided according to an embodiment of this specification.
  • Figure 8 shows a normalized displacement resonance curve provided according to an embodiment of the present specification.
  • Figure 9 shows a schematic diagram of a vibration signal provided according to an embodiment of this specification.
  • system means of distinguishing between different components, elements, parts, portions or assemblies at different levels.
  • said words may be replaced by other expressions if they serve the same purpose.
  • Sensitivity the ratio of the output signal to the input signal.
  • the input signal can be an external vibration excitation
  • the output signal can be an electrical signal generated in response to the vibration excitation.
  • the sensitivity of the vibration sensor refers to the output electrical signal and the input signal.
  • the ratio of vibration excitation, in which the output electrical signal can be converted into the amplitude of the vibration signal, therefore the sensitivity of the vibration sensor can also be understood as the ratio of the output vibration signal amplitude to the input vibration excitation amplitude.
  • sensitivity can be understood as the amplification factor of the input signal. The higher the sensitivity, the better the vibration sensor's collection performance for tiny vibration excitations.
  • Resonance Also known as “resonance”, the vibration system is under the action of periodic external vibration excitation.
  • the frequency of the external vibration excitation is the same as or very close to the natural vibration frequency of the system, the amplitude of the system increases sharply.
  • the frequency at which resonance occurs is called “resonance frequency”.
  • Resonant Peak The peak of the resonant frequency.
  • the vibration sensors and microphones provided in this specification can be used to collect external vibration excitations and convert the vibration excitations into electrical signals.
  • the vibration sensor and the microphone can be used not only to collect vibration excitations caused by air vibrations, but also can be used to collect vibration excitations caused by mechanical vibrations, such as bone vibrations, skin vibrations when people speak, etc.
  • the vibration sensor and the microphone can be used not only as air conduction microphones but also as bone conduction microphones.
  • Figure 1 shows a side view of a vibration sensor 001 provided according to an embodiment of this specification
  • Figure 2 shows a front view of a vibration sensor 001 provided according to an embodiment of this specification
  • Figure 3 shows a side view of a vibration sensor 001 provided according to an embodiment of this specification
  • Figure 4 shows a right view of a vibration sensor 001 provided according to an embodiment of this specification
  • Figure 5 shows the cross-sectional view A-A of Figure 2 .
  • the vibration sensor 001 may include a base 200 and a plurality of vibration beams 400 .
  • the base 200 may be a mounting base for the vibration sensor 001 .
  • Other components of the vibration sensor 001 such as the vibration beam 400 may be directly or indirectly connected to the base 200 .
  • the connection may be any connection method, such as welding, riveting, clamping, bolting and other fixed connection methods, or a connection deposited by physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition).
  • the base 200 can be a structure of any shape, such as a cube, a cuboid, a cylinder, a prism, a truncated cone and other regular-shaped structures, or any irregular-shaped structure.
  • the material of the base 200 may be Si, SiO2, SiNx, etc.
  • base 200 may include cavity 220 .
  • cavity 220 may extend through base 200 .
  • cavity 220 may not extend through base 200 . As illustrated in FIGS. 1 to 5 , the cavity 220 may penetrate the upper and lower surfaces of the base 200 .
  • cavity 220 may be integral. In some embodiments, cavity 220 may include a plurality of spaced apart sub-cavities. For convenience of description, the cavity 220 shown in FIGS. 1 to 5 is a whole. Those skilled in the art should understand that the cavity 220 including a plurality of spaced sub-cavities is also within the protection scope of this specification.
  • the dimensions of the cavity 220 in the first direction 221 may vary along the second direction. That is, the size of the cavity 220 in the first direction 221 changes as its position in the second direction 222 changes. That is to say, different positions of the cavity 220 in the second direction 222 have different corresponding dimensions in the first direction 221.
  • the first direction 221 and the second direction 222 are not the same direction. That is, the first direction 221 and the second direction 222 form a certain included angle.
  • the included angle may be an acute angle, a right angle, or an obtuse angle.
  • the first direction 221 and the second direction 222 are arranged perpendicularly.
  • the cross-sectional shape of the cavity 220 can be any shape that meets the above conditions, such as a circle, an ellipse, a quadrilateral, a pentagon, a hexagon, a heptagon, an octagon, or even an irregular shape, such as a variable curvature. curve shape, etc.
  • Cavities 220 of different shapes may have different corresponding first directions 221 and second directions 222 .
  • the cross-sectional shape of the cavity 220 may be a quadrilateral, such as a square
  • the first direction 221 may be the direction of one of the diagonals of the square
  • the second direction 222 may be the other direction of the positive direction. The direction of the diagonal.
  • the cross-sectional shape of the cavity 220 may be a rectangle, the first direction 221 may be a direction at an acute angle with the length or width of the rectangle, and the second direction 222 may be perpendicular to the first direction. direction.
  • the cross-section of the cavity 220 may be a parallelogram, the first direction 221 may be a direction at an acute angle with one side of the parallelogram, and the second direction 222 may be perpendicular to the first direction. Set the direction.
  • the cross section of the cavity 220 may be a trapezoid, such as an isosceles trapezoid
  • the second direction 222 may be a height direction of the isosceles trapezoid
  • the first direction 221 may be the same as the second direction 222 Vertically set direction.
  • the second direction 222 may also be a direction at an acute angle with the height direction of the isosceles trapezoid
  • the first direction 221 may be a direction perpendicular to the second direction 222 .
  • the cross section of the cavity 220 may also be a right-angled trapezoid
  • the second direction 222 may be the height direction of the right-angled trapezoid
  • the first direction 221 may be a direction perpendicular to the second direction 222
  • the cross-section of the cavity 220 may also be other quadrilateral shapes, such as trapezoids in other shapes other than isosceles trapezoids and right-angled trapezoids, such as rhombuses, irregular quadrilaterals, and so on.
  • the cross-section of the cavity 220 may be circular, the first direction 221 may be any radial direction, and the second direction 222 may be a direction perpendicular to the first direction 221.
  • the cross-section of the cavity 220 may be an ellipse, the first direction 221 may be the major axis direction or the minor axis direction of the ellipse, and the second direction 222 may be perpendicular to the first direction. direction.
  • the cross-section of the cavity 220 shown in FIGS. 1 to 5 is an isosceles trapezoid, in which the second direction 222 is the height direction of the isosceles trapezoid, and the first direction 221 is perpendicular to the second direction 222 .
  • different positions of the cavity 220 in the second direction 222 have different corresponding sizes in the first direction 221 .
  • Those skilled in the art should understand that other shapes of the cavity 220 that meet the above conditions are also within the protection scope of this specification.
  • the edge of the cavity 220 may be straight, curved, jagged, etc. In some embodiments, the edges of cavity 220 may be straight lines.
  • the size of the cavity 220 can be designed based on the application scenario of the vibration sensor 001 and the requirements for vibration excitation. For example, the dimensions of the cavity 220 may be different when the vibration sensor 001 is used as an accelerometer and when used as an air conduction microphone. In some embodiments, the size of the cavity 220 may be related to the size of the vibrating beam 400, which we will introduce in detail in the following description.
  • the vibration sensor 001 may include a plurality of vibration beams 400 .
  • the vibration beam 400 may be connected to the base 200 and generate deformation in response to external vibration excitation, and convert the deformation into a vibration signal.
  • the vibration signal may be an electrical signal.
  • the vibration excitation may be air vibration excitation acting directly on the vibration beam 400 , or may be mechanical vibration excitation acting on the base 200 .
  • the vibration beam 400 may be a plate-like structure of any shape.
  • the shape can be a rectangular beam, a trapezoidal beam, an L-shaped beam or other shapes, such as a curve, etc.
  • the plurality of vibration beams 400 may be sequentially arranged on the base 200 along the second direction 222 .
  • the vibration beam 400 may be a fixed beam, that is, both ends of the vibration beam 400 may be connected to the base 200 , and the middle part may be suspended on the cavity 220 .
  • each vibration beam 400 may include a fixed end 420 and a moving end 440.
  • each vibrating beam 400 may also include a counterweight 460 .
  • the fixed ends 420 may be located at both ends of the vibrating beam 400 .
  • the fixed end 420 may be connected to the base 200 along the first direction 221. That is, both ends of the fixed end 420 may be distributed along the first direction 221 .
  • the connection between the fixed end 420 and the base 200 can be any connection method, such as welding, riveting, clamping, bolting and other fixed connection methods, or through physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition). deposition) and other deposition connections.
  • the fixed end 420 and the base 200 may be insulated.
  • the fixed end 420 is connected to the base 200 through an insulating layer.
  • the material of the fixed end 420 may be Si, SiO2, SiNx, etc.
  • the fixed end 420 may be fixedly connected to the upper surface, lower surface of the base 200 or the inner wall of the cavity 220 .
  • the connection between the fixed end 420 and the upper surface of the base 200 is taken as an example for description. Those skilled in the art should understand that the connection between the fixed end 420 and other positions of the base 200 is also within the protection scope of this specification.
  • the movable end 440 can be connected to the fixed end 420 and is located between the fixed ends 420 and suspended in the cavity 220 .
  • the "suspended in the cavity 220" may mean that it is suspended inside, below or above the cavity 220 of the base 200 and does not contact the base 200.
  • the mobile end 440 may be suspended above the cavity 220 .
  • the mobile terminal 420 may generate deformation in response to the vibration excitation and convert the deformation into a vibration signal.
  • the moving end 440 may include a piezoelectric sensing component 442 and a connecting beam 444.
  • the piezoelectric sensing component 442 may convert the deformation of the moving end 420 into the vibration signal, and the vibration signal may include an electrical signal.
  • the connecting beam 444 may connect the piezoelectric sensing component 442 .
  • Piezoelectric sensing component 442 may include piezoelectric material.
  • the vibration sensor 001 can receive external vibration excitation and convert the external vibration excitation into an electrical signal. Specifically, the external vibration excitation can deform the mobile end 4440, thereby causing the piezoelectric material in the piezoelectric sensing component 442 to deform, thereby generating stress and outputting a voltage, thereby converting the external vibration excitation into an electrical signal. , and then collect and condition it through the back-end circuit to obtain the required electrical signal.
  • Piezoelectric materials all conform to the piezoelectric effect constitutive equation. For vibration sensor 001, the positive piezoelectric effect is applied, and its constitutive equation is:
  • d ij is the piezoelectric strain coefficient
  • T j is the stress
  • E j is the electric field intensity
  • D i is the electric displacement.
  • the electrical displacement D i is mainly caused by the stress formed by external vibration excitation.
  • the output electric displacement D i of the piezoelectric material depends on the piezoelectric strain coefficient d ij of the material itself and the stress T j formed by the piezoelectric material during operation. After determining the piezoelectric material, designing the structure to increase the stress in some areas of the effective piezoelectric material is an effective measure to improve the output of the piezoelectric sensing component 442.
  • Piezoelectric sensing component 442 may be suspended in cavity 220 . In some embodiments, the piezoelectric sensing components 442 may be distributed in all areas of the mobile terminal 440 . In some embodiments, the piezoelectric sensing components 442 may also be distributed in part of the mobile terminal 440 . The piezoelectric sensing component 442 can convert the deformation of the moving end 440 into a vibration signal and output it. When relative movement occurs between the moving end 440 and the base 200 , the deformation degrees of the moving end 440 at different positions are different, and the deformation stress generated on the piezoelectric sensing component 442 is also different.
  • the piezoelectric sensing component 442 can be disposed only at the position of the mobile end 440 where the degree of deformation and stress is greater, thereby improving the sensitivity of the vibration sensor 001.
  • the position where the deformation degree and stress of the movable end 440 are large as the first region and the position where the deformation degree and stress of the movable end 440 are small is defined as the second region.
  • the electrical signal has a higher voltage in the first region than in the second region.
  • the piezoelectric sensing component 442 can be disposed only in the first region. It should be noted that the first area and the second area refer to the area corresponding to the movable end 440, and do not include the area of the fixed end 420, that is, the area at the connection between the vibration beam 400 and the base 200.
  • the direction of the stress experienced by the moving end 440 is related to the overall deformation direction of the moving end 440 .
  • the movable end 440 vibrates downward and vibrates upward, its deformation direction is opposite.
  • the direction of the stress borne by the same part of the movable end 440 is also opposite.
  • the area under compressive stress is in the downward vibration. will be subject to tensile stress, and the area that is subject to tensile stress during upward vibration will be subject to compressive stress during downward vibration.
  • the axial stress on the lower surface of the movable end 440 is symmetrical about the center of the movable end 440, and will reduce from the tensile stress to zero on the center side. , and then increases from zero to compressive stress, the zero point is located at one-quarter and three-quarters of the axial length of the moving end 440.
  • the axial stress on the lower surface of the movable end 440 is symmetrical about the center of the movable end 440 , and will reduce from the compressive stress to zero on the center side, and then Increasing from zero to tensile stress, the zero point is located at one-quarter and three-quarters of the axial length of the moving end 440.
  • the piezoelectric sensing component 440 may be arranged in an area with greater stress and the same stress direction.
  • the piezoelectric sensing component 442 may be arranged in an area with greater compressive stress.
  • the piezoelectric sensing component 442 can be arranged at both ends of the moving end 440 close to the fixed end 420 , and the distance from the fixed end 420 is less than a quarter of the length of the moving end 440 .
  • the first area may be within a range at both ends of the moving end 440 and the distance from the fixed end 420 is less than a quarter of the length of the moving end 440 .
  • the mobile terminal 440 may include at least two piezoelectric sensing components 442. Taking the number of piezoelectric sensing components 442 as 2 as an example, the two piezoelectric sensing components 442 can be close to both ends of the fixed end 420 respectively, and the distance between each piezoelectric sensing component 442 and the adjacent fixed end 420 can be Less than 1/4 of the length of the mobile terminal 440. At this time, the two ends of the piezoelectric sensing component 442 are connected to the fixed end 420 and the connecting beam 444 respectively.
  • the piezoelectric sensing component 442 when the moving end 440 vibrates downward, the piezoelectric sensing component 442 may be arranged in an area with greater tensile stress.
  • the piezoelectric sensing component 442 may be disposed at the moving end 440 , and the distance from one of the fixed ends 420 is within a range of one quarter to three quarters of the length of the moving end 440 . That is, the first area may be at the moving end 440 , and the distance from one end of the fixed end 420 is within the range of one quarter to three quarters of the length of the moving end 440 .
  • the distance between the piezoelectric sensing component 442 and the fixed end 420 can be the distance between any position on the piezoelectric sensing component 442 and the fixed end 420 .
  • the distance between the piezoelectric sensing component 442 and the fixed end 420 can be the distance between the center position of the piezoelectric sensing component 442 and the fixed end 420, or it can be the end of the piezoelectric sensing component 442 (the end of either end). ) and the fixed end 420 can also be the distance between other parts of the piezoelectric sensing component 442 and the fixed end 420 .
  • the piezoelectric sensing component 442 may include at least one of a laminate structure composed of a piezoelectric single crystal structure and a laminate structure composed of a piezoelectric double crystal structure.
  • the piezoelectric sensing component 442 may be a stacked structure composed of piezoelectric single crystal structures.
  • FIG. 6 shows a schematic diagram of a piezoelectric sensing component 442 provided according to an embodiment of this specification, which is a piezoelectric single crystal structure 442a.
  • the piezoelectric single crystal structure 442a may include an elastic layer 442a-2, a bottom electrode layer 442a-4, a piezoelectric layer 442a-6 from bottom to top along the thickness direction of the piezoelectric sensing component 442.
  • the piezoelectric single crystal structure 442a may include an elastic layer 442a-2, a top electrode layer 442a-8, and a piezoelectric layer 442a-6 from top to bottom along the thickness direction of the piezoelectric sensing component 442. , bottom electrode layer 442a-4.
  • the piezoelectric single crystal structure 442a may include an elastic layer 442a-2, a bottom electrode layer 442a-4, a piezoelectric layer 442a-6, and The top electrode layer 442a-8 is described as an example.
  • the piezoelectric single crystal structure 442a may also include connection terminal layers 442a-9.
  • the elastic layer 442a-2 may be directly or indirectly fixedly connected to the fixed end 420 and the connecting beam 444.
  • the connection may be any connection method, such as fixed connection methods such as welding, riveting, clamping, and bolting, or a connection deposited by physical deposition (eg, physical vapor deposition) or chemical deposition (eg, chemical vapor deposition).
  • physical deposition eg, physical vapor deposition
  • chemical deposition eg, chemical vapor deposition
  • the elastic layer 442a-2 can be a single layer of material, such as Si, SiO2, SiNx, SiC, etc., or a multi-layer material, such as Si/SiO2, SiO2/Si, Si/SiNx, SiNx/Si, etc.
  • the thickness of the elastic layer 442a-2 may be 1um-10um. In some embodiments, the elastic layer 442a-2 may have a thickness of 1um-3um. In some embodiments, the thickness of the elastic layer 442a-2 may be 2um-6um. In some embodiments, the thickness of elastic layer 442a-2 may be 4um-8um. In some embodiments, the thickness of the elastic layer 442a-2 may be 6um-10um.
  • Piezoelectric sensing component 442 may include piezoelectric layers 442a-6.
  • the piezoelectric layer 442a-6 refers to a structure that can generate voltage on both ends thereof when acted upon by an external force.
  • the piezoelectric layer 442a-6 may be fixedly connected to the base 200 directly or indirectly.
  • the connection may be any connection method, such as welding, riveting, clamping, bolting and other fixed connection methods, or a connection deposited by physical deposition (for example, physical vapor deposition) or chemical deposition (for example, chemical vapor deposition).
  • the piezoelectric layer 442a-6 can undergo the deformation when subjected to a vibration signal and generate a voltage based on the deformation.
  • the piezoelectric layer 442a-6 may be directly or indirectly attached to the surface of the elastic layer 442a-2.
  • the elastic layer 442a-2 can be connected to the fixed end 420 and the connecting beam 444, and the piezoelectric layer 442a-6 is connected to the fixed end 420 and the connecting beam 444 through the elastic layer 442a-2.
  • the piezoelectric layer 442a-6 may be located on the side of the elastic layer 442a-2 away from the base 200.
  • the piezoelectric layer 442a-6 may be located on a side of the elastic layer 442a-2 close to the base 200.
  • the elastic layer 442a-2 When the vibration beam 400 is excited by external vibration, the elastic layer 442a-2 generates the deformation based on the vibration excitation; the piezoelectric layer 442a-6 can be based on the piezoelectric effect, and is subjected to the deformation of the elastic layer 442a-2. Stress creates a voltage (potential difference).
  • the magnitude of the electrical signal output by the piezoelectric material is related to the magnitude of the stress.
  • the distribution position of each layer of material in the thickness direction will affect the stress distribution of each layer of material under the same vibration excitation.
  • the piezoelectric layer 442a-6 is distributed on one side of the elastic layer 442a-2. Specifically, the piezoelectric layer 442a-6 is distributed near the upper surface or the lower surface in the thickness direction of the vibrating beam 400, so that the piezoelectric layer 442a-6 is away from the neutral layer, thereby maximizing the stress of the piezoelectric layer 442a-6.
  • the piezoelectric layer 442a-6 may be a piezoelectric polymer film obtained by a semiconductor deposition process (eg, magnetron sputtering, MOCVD).
  • the materials of piezoelectric layer 442a-6 may include piezoelectric crystal materials and piezoelectric ceramic materials.
  • Piezoelectric crystal refers to piezoelectric single crystal.
  • the piezoelectric crystal material may include crystal, sphalerite, harzburgite, tourmaline, red zincite, GaAs, barium titanate and its derivative structure crystals, KH 2 PO 4 , NaKC 4 H 4 O 6 ⁇ 4H 2 O (Rosine salt), etc., or any combination thereof.
  • Piezoelectric ceramic materials refer to piezoelectric polycrystals formed by the irregular collection of fine grains obtained by solid-state reaction and sintering between different material particles.
  • the piezoelectric ceramic material may include barium titanate (BT), lead zirconate titanate (PZT), lead barium lithium niobate (PBLN), modified lead titanate (PT), aluminum nitride (AIN ), zinc oxide (ZnO) or any combination thereof.
  • the material of the piezoelectric layer 442a-6 may also be a piezoelectric polymer material, such as polyvinylidene fluoride (PVDF). In some embodiments, piezoelectric layer 442a-6 may be greater than 500 nm thick.
  • the thickness of piezoelectric layer 442a-6 may be 20-500um, such as when vibration sensor 001 is used in a macroscopic device. In some embodiments, the thickness of piezoelectric layer 442a-6 may be 0.5-1.5um, such as when vibration sensor 001 is used in a MEMS device.
  • the ratio of the thickness of the elastic layer 442a-2 to the thickness of the piezoelectric layer 442a-6 may be 1-10. In some embodiments, the ratio of the thickness of the elastic layer 442a-2 to the thickness of the piezoelectric layer 442a-6 may be 2-7.
  • the bottom electrode layer 442a-4 and the top electrode layer 442a-8 are respectively distributed on both sides of the piezoelectric layer 442a-6.
  • Piezoelectric layer 442a-6 may be located between bottom electrode layer 442a-4 and top electrode layer 442a-8.
  • the piezoelectric layer 442a-6 can deform along with the deformation of the elastic layer 442a-2 under the action of external vibration excitation, and generate a voltage under the action of deformation stress.
  • the bottom electrode layer 442a-4 and the top electrode layer 442a-8 can collect the voltage to generate the electrical signal. Wherein, the positions of the bottom electrode layer 442a-4 and the top electrode layer 442a-8 are aligned.
  • the piezoelectric layer 442a-6 is connected to the elastic layer 442a-2, and the piezoelectric layer 442a-6 is distributed on one side of the elastic layer 442a-2.
  • the bottom electrode layer 442a-4 may be distributed between the piezoelectric layer 442a-6 and the elastic layer 442a-2, and the top electrode layer 442a-8 may be distributed on the side of the piezoelectric layer 442a-6 away from the elastic layer 442a-2.
  • the bottom electrode layer 442a-4 and the top electrode layer 442a-8 are conductive material structures.
  • Exemplary conductive materials may include metals, alloy materials, metal oxide materials, graphene, etc., or any combination thereof.
  • metal and alloy materials may include nickel, iron, lead, platinum, titanium, copper, molybdenum, zinc, or any combination thereof.
  • the alloy material may include copper-zinc alloy, copper-tin alloy, copper-nickel-silicon alloy, copper-chromium alloy, copper-silver alloy, etc., or any combination thereof.
  • the metal oxide material may include RuO 2 , MnO 2 , PbO 2 , NiO, etc., or any combination thereof.
  • Bottom electrode layer 442a-4 may include at least one bottom piezoelectric electrode pad.
  • Top electrode layer 442a-8 may include at least one top piezoelectric electrode pad.
  • Each of the at least one bottom piezoelectric electrode pad is aligned with at least one position of the at least one top piezoelectric electrode pad.
  • the position of each bottom piezoelectric electrode piece corresponds to a top piezoelectric electrode piece.
  • the position of each bottom piezoelectric electrode piece corresponds to multiple top piezoelectric electrode pieces, such as 2, 3, 4, and so on.
  • the plurality of top piezoelectric electrode sheets form a series output unit with the bottom piezoelectric electrode sheet as a common terminal to increase the output voltage. Increase sensitivity.
  • the plurality of top piezoelectric electrode sheets can also form a parallel output unit with the bottom piezoelectric electrode sheet to increase the output charge and improve sensitivity.
  • the piezoelectric sensing component 442 may include only series output units, only parallel output units, or may include both series output units and parallel output units.
  • bottom electrode layer 442a-4 may be 50-200 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 100-150 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 100-200 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 80-150 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 150-200 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 120-150 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 120-200 nm thick. In some embodiments, bottom electrode layer 442a-4 may be 150-200 nm thick.
  • top electrode layer 442a-8 may be 50-200 nm thick. In some embodiments, top electrode layer 442a-8 may be 100-150 nm thick. In some embodiments, top electrode layer 442a-8 may be 100-200 nm thick. In some embodiments, top electrode layer 442a-8 may be 80-150 nm thick. In some embodiments, top electrode layer 442a-8 may be 150-200 nm thick. In some embodiments, top electrode layer 442a-8 may be 120-150 nm thick. In some embodiments, top electrode layer 442a-8 may be 120-200 nm thick. In some embodiments, top electrode layer 442a-8 may be 150-200 nm thick.
  • the piezoelectric single crystal structure 442a may further include a connection terminal layer 442a-9 connected to the bottom electrode layer 442a-4 or the top electrode layer 442a-8 to output the electrical signal to an external processing circuit.
  • the connection terminal layer 442a-9 may be made of the same material as the bottom electrode layer 442a-4 and the top electrode layer 442a-8, or may be different.
  • the thickness of the connection terminal layer 442a-9 may be 100-200 nm. In some embodiments, the thickness of the connection terminal layer 442a-9 may be 150-200 nm. In some embodiments, the thickness of the connection terminal layer 442a-9 may be 100-150 nm. In some embodiments, the thickness of the connection terminal layer 442a-9 may be 120-200 nm. In some embodiments, the thickness of the connection terminal layer 442a-9 may be 160-200 nm.
  • the piezoelectric sensing component 442 may be a stacked structure composed of piezoelectric single crystal structures.
  • Figure 7 shows a schematic diagram of a piezoelectric bicrystal structure 442b of a piezoelectric sensing component 442 provided according to an embodiment of the present specification.
  • the piezoelectric bicrystal structure 442b may include an electrode layer 442b-2, a piezoelectric layer 442b-4, an electrode layer 442b-2, and a piezoelectric layer in order from bottom to top along the thickness direction of the piezoelectric sensing component 442. 442b-4 and electrode layer 442b-2.
  • piezoelectric bimorph structure 442b may also include connection terminal layers 442b-9.
  • the material thickness of the electrode layer 442b-2 is basically the same as that of the above-mentioned bottom electrode layer 442a-4 or top electrode layer 442a-8, which will not be described again here.
  • the thickness of the materials of the piezoelectric layer 442b-4 and the above-mentioned piezoelectric layer 442a-6 is basically the same, and will not be described again here.
  • the material thickness of the connection terminal layer 442b-9 is basically the same as that of the connection terminal layer 442a-9 mentioned above, which will not be described again here.
  • the connecting beam 444 can connect the piezoelectric sensing components 442.
  • the connecting beam 444 can be located between two piezoelectric sensing components 442 and connect the two piezoelectric sensing components 442.
  • the connecting beam 444 material may be Si, SiO 2 , SiNx, etc.
  • each vibration beam 400 may also include a counterweight 460 .
  • the counterweight block 460 can be connected with the mobile terminal 440.
  • the counterweight block 460 can be directly connected to the mobile terminal 440 or indirectly connected to the mobile terminal 440 .
  • the counterweight 460 may be connected to the connecting beam 444.
  • the counterweight 460 may be located at a middle position of the moving end 440 so that the counterweight 460 may be located in the center of the cavity 220 in the first direction 221 .
  • the counterweight 460 may generate a displacement based on the deformation.
  • the counterweight 460 may protrude to one side relative to the moving end 420 and be suspended in the cavity 220 .
  • the counterweight 460 can protrude upward relative to the moving end 420 and be suspended in the cavity 220 .
  • the counterweight 460 can also protrude downward relative to the moving end 420 and be suspended in the cavity 220 .
  • the counterweight 460 can make the movable end 420 more easily deformed under the action of external force, thereby increasing the electrical signal output by the piezoelectric sensing component 442 .
  • the electrical signal output by the piezoelectric sensing component 442 can be improved by changing the size, shape, and position of the weight 460 .
  • the arrangement of the counterweight 460 can change the natural frequency and vibration amplitude of the vibrating beam 400 when it vibrates.
  • the material of the weight 460 may be Si, SiO 2 , SiNx, etc.
  • the planar shape of the weight block 460 may be a circle, a triangle, a quadrilateral, a polygon, etc. As an example, assume that the planar shape of the counterweight 460 is a quadrilateral.
  • the length of the weight 460 may be 50um-500um. In some embodiments, the length of the weight 460 may be 80um-300um.
  • the width of the weight 460 may be 50um-500um. In some embodiments, the width of the weight 460 may be 80um-200um.
  • the width of the counterweight 460 may be greater than, equal to, or less than the width of the vibrating beam 400 . In some embodiments, the width of the counterweight 460 may be equal to the width of the vibrating beam 400 .
  • the vibration sensor 001 may additionally add a piezoelectric sensing component 442 close to the counterweight 460 .
  • the additional piezoelectric sensing component 442 may be disposed proximate to and surrounding the circumferential area of the weight 460 .
  • each vibration beam 400 may include a counterweight 460 .
  • each vibration beam 400 may not include a counterweight 460 .
  • the size of the cavity 220 in the first direction 221 may vary along the second direction 222 . That is, the size of the cavity 220 in the first direction 221 changes as its position in the second direction 222 changes. That is to say, different positions of the cavity 220 in the second direction 222 have different corresponding dimensions in the first direction 221 .
  • the plurality of vibration beams 400 may be sequentially arranged on the base 200 along the second direction 222 .
  • the moving end 440 of each vibrating beam 400 is suspended on the cavity 220 . That is to say, the plurality of vibration beams 400 are respectively located at different positions of the cavity 220 in the second direction 222 .
  • each vibrating beam 400 has a different natural frequency.
  • Multiple vibration beams 400 correspond to multiple vibration frequencies.
  • Each vibration beam 400 responds to external vibration excitation and generates vibration signals within a sub-target frequency window including its corresponding natural frequency.
  • the vibration signals generated by different vibration beams 400 correspond to different sub-target frequency windows.
  • the multiple sub-target frequency windows corresponding to the multiple vibration beams 400 cover different frequency ranges.
  • the plurality of sub-target frequency windows constitute a target frequency window.
  • the target frequency window may be a continuous frequency window.
  • the target frequency window may be any frequency range.
  • the target frequency window can be set based on the usage scenario of the vibration sensor 001. For example, the target frequency window may be different when vibration sensor 001 is used as a microphone and when used as an acceleration sensor.
  • multiple natural frequencies corresponding to multiple vibration beams 400 may be evenly distributed within the target frequency window. In some embodiments, multiple natural frequencies corresponding to multiple vibration beams 400 may be non-uniformly distributed within the target frequency window.
  • the sub-target frequency window may be a frequency window including the natural frequency.
  • the sub-target frequency window may be a frequency window set symmetrically with respect to the natural frequency.
  • the sub-target frequency window may be a frequency window set asymmetrically with respect to the natural frequency.
  • the length range of the sub-target frequency window should be within a preset length range. In some embodiments, we can determine the range covered by the sub-target frequency window based on the amplitude of the vibration signal corresponding to the sub-target frequency window. For example, the amplitude of the vibration signal within the sub-target frequency window should not be less than the preset ratio of the resonance peak corresponding to the natural frequency.
  • the preset ratio may be any preset ratio, such as 20%, 30%, 50%, etc.
  • the target frequency window corresponding to the vibration sensor 001 when the vibration sensor 001 is used as a microphone (such as a bone conduction microphone), the target frequency window may be 100 Hz-5000 Hz. In some embodiments, the target frequency window of the vibration sensor 001 may be 20Hz-5000Hz. In some embodiments, the number of vibration beams 400 may be 2 or more. For example, in some embodiments, the number of vibrating beams 400 may be 3-50.
  • the number of vibrating beams 400 may be 10-20. In some embodiments, the number of vibration beams 400 can be determined based on the usage scenario and usage requirements of the vibration sensor 001 and based on the number of resonance peaks required by the vibration sensor 001. When only the first-order resonance peak of the vibration beam 400 is used, the number of the vibration beams 400 is equal to the number of resonance peaks. In the case of using the high-order resonance peaks of the vibration beams 400, the number of the vibration beams 400 is less than the number of resonance peaks. However, usually the signal intensity of the high-order resonance peak is much smaller than the first-order resonance peak, so the first-order resonance peak of the vibration beam 400 is usually used in the vibration sensor 001.
  • the natural frequency of the vibrating beam 400 is determined by the characteristics of the vibrating beam 400 itself.
  • the natural frequency of the vibrating beam 400 is not only related to the material properties of the vibrating beam 400 , but also related to the size of the moving end 440 of the vibrating beam 400 suspended on the cavity 200 .
  • different positions of the cavity 220 in the second direction 222 have different corresponding sizes in the first direction 221 . Therefore, we can design each vibrating beam 400 according to the size of the cavity 220 in the first direction 221, the position of each vibrating beam 400 on the cavity 220, and the size of each vibrating beam 400, so that each vibrating beam The natural frequency of 400 meets the preset value.
  • each vibration beam 400 suspended in the cavity by changing the size of the cavity 220 in the first direction 221, the position of each vibration beam 400 on the cavity 220, and the size of each vibration beam 400.
  • the moving end 440 on 220 meets the preset rules, so that the natural frequency of each vibrating beam 400 meets the preset value.
  • the preset value may be a predetermined natural frequency of each vibration beam 400 .
  • the overall dimensions of the multiple vibrating beams 400 may be the same.
  • the axial length, width and thickness of the vibrating beams 400 may be the same.
  • the entirety of the multiple vibrating beams 400 may be different.
  • the size in at least one direction of the axial length, width, and thickness of the vibrating beams 400 may be different.
  • the position on the cavity 220, the size of the cavity 220 in the first direction 221, and the sizes of the multiple vibrating beams 400 make the moving ends 440 of the multiple vibrating beams 400 suspended on the cavity 220 have different sizes, so that the multiple vibrating beams 400 have different sizes.
  • Each vibrating beam 400 has different natural frequencies, and the natural frequencies satisfy a preset value.
  • the target frequency window is 20Hz-5000Hz
  • the number of vibrating beams 400 is 10, and the natural frequencies of the 10 vibrating beams 400 are evenly distributed within the target frequency window, the natural frequencies of each vibrating beam 400 need to be spaced apart.
  • a certain frequency band width is provided for easy distinction, and the frequency band width between each natural frequency is 50Hz-400Hz.
  • the frequency bandwidth between natural frequencies is 100Hz-200Hz.
  • the gap width between each vibrating beam 400 may be 1um-200um. In some embodiments, the gap width between each vibrating beam 400 is 10um-100um.
  • the gap widths between different vibrating beams 400 may be equal or unequal.
  • the length of the moving end 440 of each vibrating beam 400 suspended above the cavity 220 in the first direction 221 can vary linearly or nonlinearly.
  • each vibrating beam 400 can be arranged in sequence on the cavity 220 according to the length of the moving end 440, or can be arranged according to other rules.
  • the planar shape of each vibrating beam 400 may be rectangular, trapezoidal, curved, etc.
  • the cross-sectional width of each vibration beam 400 may be 50um-300um. In some embodiments, the cross-sectional width of each vibration beam 400 may be 80um-200um.
  • the axial length of each vibration beam 400 may be 100um-1300um. In some embodiments, the axial length of each vibration beam 400 may be 200um-1200um.
  • the vibrating beam 400 may not include the counterweight 460 .
  • the gap width between adjacent vibration beams 400 can be reduced to increase the output of vibration signals.
  • the vibrating beam 400 may also include a counterweight 460 .
  • each vibration according to the size of the cavity 220 in the first direction 221, the position of each vibration beam 400 on the cavity 220, the size of each vibration beam 400, and the size of the counterweight block 460. beams 400 so that the natural frequency of each vibrating beam 400 meets a preset value.
  • FIG. 8 shows a normalized displacement resonance curve provided according to an embodiment of this specification.
  • the curve shown in FIG. 8 may be a corresponding normalized displacement resonance curve diagram of one of the plurality of vibrating beams 400.
  • the horizontal axis is the ratio of the external vibration excitation ⁇ to the natural frequency ⁇ 0 of the vibrating beam 400
  • the vertical axis is the normalized displacement A.
  • the normalized displacement A may be the ratio of the displacement amplitude of the vibrating beam 400 to the static displacement amplitude.
  • M is the mass of the vibrating beam 400, that is, the mass of the moving end 440 and the counterweight 460.
  • K is the elastic coefficient of the vibrating beam 400 .
  • the different curves shown in Figure 8 respectively correspond to six different mechanical quality factors Q of the vibrating beam 400.
  • R is the damping of the vibrating beam 400.
  • the normalized displacement A corresponds to a larger electrical signal of the vibration signal output by the piezoelectric sensing component 442 .
  • FIG. 9 shows a schematic diagram of a vibration signal provided according to an embodiment of this specification.
  • the vibration signal shown in FIG. 9 is a linear superposition of multiple vibration signals generated by multiple vibration beams 400.
  • the deviation of the vibration signals output by different vibrating beams 400 at their corresponding natural frequencies within a preset deviation range thereby making the vibration signals output by different vibrating beams 400
  • the signals may be in the same magnitude or within a similar magnitude at their corresponding natural frequencies to facilitate calculation.
  • the preset deviation range may be a preset range that facilitates signal calculation.
  • the preset deviation range can be obtained based on experience, experimental statistics, or machine learning.
  • the deviation of the vibration signals output by the different vibrating beams 400 at the corresponding natural frequencies within the preset deviation range may be the normalized displacement A of the vibration signals output by the different vibrating beams 400 at the corresponding natural frequencies. The deviation in frequency does not exceed the preset deviation range.
  • the preset deviation range may be any value, such as ⁇ 30%, ⁇ 20%, ⁇ 10%, and so on.
  • the deviation of the vibration signal corresponding to each vibration beam 400 at its corresponding natural frequency is within the preset deviation range.
  • the size of the counterweight 460 is such that the deviation of the mechanical quality factor Q of each vibrating beam 400 is within the preset deviation range, so that the vibration signal corresponding to each vibrating beam 400 is at its corresponding natural frequency. The deviation is within the preset deviation range.
  • the deviation of the normalized displacement A of the vibration signals output by different vibration beams 400 at their corresponding natural frequencies may not be within the preset deviation range.
  • the normalized displacement A of the vibration signals output by different vibration beams 400 is not within the preset deviation range at its corresponding natural frequency and does not affect the superposition processing of the vibration signals. It is also mentioned in this specification. within the scope of protection.
  • This specification also provides a microphone, which may include a housing and the vibration sensor 001 provided in this specification.
  • a vibration sensor 001 may be mounted in the housing.
  • the housing can be fixedly connected to the base 200 .
  • the housing and the base 200 may be of an integrated structure or a split structure, and may be connected together through a fixed connection, such as welding, riveting, bolting, bonding, etc.
  • the vibration of the housing drives the base 200 to vibrate. Due to the different properties of the vibration beam 400 and the housing structure (or the base 200 ), the vibration beam 400 and the housing structure (or the base 200 ) cannot maintain completely consistent movement, resulting in relative motion. , thereby causing the vibrating beam 400 to produce the deformation.
  • the piezoelectric sensing component 442 converts the deformation into the vibration signal and outputs it.
  • the microphone may further include a signal synthesis circuit.
  • the signal synthesis circuit is connected to the piezoelectric sensing component 442 of each vibration beam 400, and collects the vibration signal collected by each piezoelectric sensing component 442 during operation, and performs signal synthesis processing to generate a signal within the target frequency window. vibration signal.
  • the signal synthesis processing may be a linear superposition of multiple vibration signals generated by multiple vibration beams 400 .
  • the microphone described in this specification can be applied to various electronic products.
  • devices with voice collection functions such as headphones (for example, bone conduction headphones or air conduction headphones, wireless headphones, wired headphones), smart glasses, smart wearable devices, smart helmets, smart watches, etc.
  • the vibration sensor 001 and microphone provided in this specification, the vibration beam 400 is fixed on the base 200 through the fixed ends 420 at both ends, while the movable end 440 in the middle part is suspended in the cavity 220 and responds to external conditions. Vibration excitation produces deformation.
  • the vibration sensor 001 and the microphone change the structure and size of the cavity 220 and the size and position of the vibration beam 400, so that the sizes of the parts of the multiple vibration beams 400 suspended on the cavity 220 are different, so that different vibration beams 400 have different characteristics.
  • the natural frequency of the material generates resonance peaks of different frequencies under vibration excitation.
  • Multiple vibration beams 400 can generate multiple vibration signals in different frequency ranges, and the multiple vibration signals in different frequency ranges together constitute a broad-band vibration signal, thereby making the frequency response range of the vibration sensor 004 wider.
  • the vibration signal selected by the vibration sensor 001 and the microphone is a vibration signal within a preset range near the resonance peak, so its sensitivity is higher.
  • the vibration sensor 001 and the microphone achieve the purpose of multiple resonant peaks and wide frequency bands by designing the size of the cavity 220 of the base 200. They have a simple structure, low processing difficulty, low processing cost and higher precision. The collection of vibration signals The results are more accurate.
  • the subsequent processing of the vibration signals enables the use of low-order filters to extract the cutoff from the vibration signals shown in Figure 9 during post-algorithm processing. Displacement signals output at different frequencies with steep edges can be extracted to extract input signals at different frequencies, thereby avoiding the use of high-order filters to extract signals in later algorithms and reducing the amount of algorithm calculations.

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Abstract

本说明书提供的振动传感器以及麦克风，将振动梁的两端固定在基座上，而中间部分悬空在腔体中，并响应于外界的振动激励产生形变。所述振动传感器以及麦克风通过改变腔体的结构和尺寸以及振动梁的尺寸和位置，使得多个振动梁悬空于腔体上的部分的尺寸不同，从而使得不同的振动梁具有不同的固有频率，在振动激励下生成不同频率的谐振峰，从而更宽的频率响应范围。同时，所述振动传感器以及麦克风选取的振动信号为谐振峰附近的预设范围内的振动信号，灵敏度更高。并且，所述振动传感器以及麦克风通过对基座腔体的尺寸进行设计来实现多谐振峰以及宽频带的目的，其结构简单，加工难度低，加工成本低且精度更高，振动信号的采集结果更准确。

Description

振动传感器以及麦克风 技术领域
本说明书涉及传感器领域，尤其涉及一种振动传感器以及麦克风。
背景技术
现有技术中，加速度计、扬声器、陀螺仪、能量采集器、骨导麦克风以及气导麦克风等振动传感器中广泛采用振膜和质量块结构或悬臂梁和质量块结构。比如，麦克风采用振动传感器中的振膜和质量块结构或悬臂梁和质量块结构接收外界振动激励，并将振动激励转换为电信号，通过后端电路处理后输出电信号，从而进行声音信号的采集。气传导麦克风可以采集用户在发出声音时引起的空气振动，并将空气振动转化为电信号。骨传导麦克风可以采集用户在说话时引起的骨骼和皮肤的机械振动，并将机械振动转化为电信号。更高的灵敏度以及对振动激励更宽的频率响应范围一直是振动传感器追求的目标。但是由于振动系统的特性，谐振峰后的灵敏度会急剧衰减，且谐振频率越高，灵敏度一般会越低，从而导致单谐振峰振动传感器难以兼顾高灵敏度和宽频带两种特性。同时，单一的谐振峰往往不能满足需求。现有技术中的多谐振峰振动传感器结构复杂，加工难度高，从而导致成本较高且精度较低。
因此，需要提供一种频率响应范围更宽、灵敏度更高且结构简单的振动传感器以及麦克风。
发明内容
本说明书提供一种频率响应范围更宽、灵敏度更高且结构简单的振动传感器以及麦克风。
第一方面，本说明书提供一种振动传感器，包括基座以及多个振动梁，所述基座包括腔体；所述多个振动梁依次排列在所述基座上，其中，每个振动梁包括固定端以及移动端，所述固定端位于所述振动梁的两端，与所述基座连接；所述移动端与所述固定端连接，并位于所述固定端之间，悬空于所述腔体中，其中，所述每个振动梁悬空于所述腔体上的尺寸不同，具有不同的固有频率，所述每个振动梁响应于外界的振动激励，生成包括其对应的固有频率在内的子目标频率窗口内的振动信号。
在一些实施例中，所述多个振动梁对应的多个子目标频率窗口覆盖不同的频率范围，所述多个子目标频率窗口构成目标频率窗口。
在一些实施例中，所述多个振动梁对应的多个固有频率均匀分布在所述目标频率窗口内。
在一些实施例中，所述腔体在第一方向上的尺寸沿第二方向变化，所述多个振动梁沿所述第二方向排列在所述基座上，所述固定端沿所述第一方向与所述基座连接。
在一些实施例中，所述腔体在所述第一方向上的尺寸、所述每个振动梁在所述腔体上的位置以及所述每个振动梁的尺寸满足预设的规则，使得所述每个振动梁的所述固有频率满足预设值。
在一些实施例中，所述移动端响应于所述振动激励产生形变，所述移动端包括压电传感部件以及连接梁，所述压电传感部件将所述形变转化为所述振动信号，所述振动信号包括电信号；所述连接梁与所述压电传感部件连接。
在一些实施例中，所述压电传感部件与所述固定端中的一端的距离在所述移动端的长度的四分之一至四分之三的范围内。
在一些实施例中，所述移动端包括：2个所述压电传感部件，分别靠近所述固定端的两端，且每个所述压电传感部件与其靠近的所述固定端的距离小于所述移动端长度的1/4。
在一些实施例中，所述压电传感部件包括压电单晶结构和压电双晶结构中的至少一种。
在一些实施例中，所述每个振动梁还包括配重块，与所述移动端连接，其中，所述移动端响应于所述振动激励产生形变，所述配重块基于所述形变产生位移。
在一些实施例中，所述腔体在所述第一方向上的尺寸、所述每个振动梁在所述腔体上的位置、所述每个振动梁的尺寸以及所述配重块的尺寸满足预设的规则，使得所述每个振动梁的所述固有频率满足预设值。
在一些实施例中，所述配重块的尺寸与其对应的振动梁的所述固有频率相匹配，使得所述多个振动梁在其对应的所述固有频率上的所述振动信号的偏差在预设偏差范围内。
第二方面，本说明书还提供一种麦克风，包括壳体、本说明书第一方面所述的振动传感器以及信号合成电路，所述振动传感器安装在所述壳体中，所述基座与所述壳体固定连接；所述信号合成电路同所述多个振动梁连接，运行时采集所述振动信号，并对所述振动信号进行信号合成处理，以生成目标频率窗口内的振动信号，其中，所述多个振动梁对应的多个子目标频率窗口覆盖不同的频率范围，所述多个子目标频率窗口构成所述目标频率窗口。
由以上技术方案可知，本说明书提供的振动传感器以及麦克风，将振动梁的两端固定在基座上，而中间部分悬空在腔体中，并响应于外界的振动激励产生形变。所述振动传感器以及麦克风通过改变腔体的结构和尺寸以及振动梁的尺寸和位置，使得多个振动梁悬空于腔体上的部分的尺寸不同，从而使得不同的振动梁具有不同的固有频率，在振动激励下生成不同 频率的谐振峰。多个振动梁可以生成多个不同频率范围的振动信号，多个不同频率范围的振动信号共同构成宽频带的振动信号，从而使得振动传感器的频率响应范围更宽。同时，所述振动传感器以及麦克风选取的振动信号为谐振峰附近的预设范围内的振动信号，因此，其灵敏度更高。并且，所述振动传感器以及麦克风通过对基座腔体的尺寸进行设计来实现多谐振峰以及宽频带的目的，其结构简单，加工难度低，加工成本低且精度更高，振动信号的采集结果更准确。
本说明书提供的振动传感器以及麦克风的其他功能将在以下说明中部分列出。根据描述，以下数字和示例介绍的内容将对那些本领域的普通技术人员显而易见。本说明书提供的振动传感器以及麦克风的创造性方面可以通过实践或使用下面详细示例中所述的方法、装置和组合得到充分解释。
附图说明
为了更清楚地说明本说明书实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本说明书的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了根据本说明书的实施例提供的一种振动传感器的侧视图；
图2示出了根据本说明书的实施例提供的一种振动传感器的主视图；
图3示出了根据本说明书的实施例提供的一种振动传感器的俯视图；
图4示出了根据本说明书的实施例提供的一种振动传感器的右视图；
图5示出了图2的剖面图A-A；
图6示出了根据本说明书的实施例提供的一种压电单晶结构的示意图；
图7示出了根据本说明书的实施例提供的一种压电双晶结构的示意图；
图8示出了根据本说明书的实施例提供的一种归一化位移共振曲线图； 以及
图9示出了根据本说明书的实施例提供的一种振动信号的示意图。
具体实施方式
以下描述提供了本说明书的特定应用场景和要求，目的是使本领域技术人员能够制造和使用本说明书中的内容。对于本领域技术人员来说，对所公开的实施例的各种局部修改是显而易见的，并且在不脱离本说明书的精神和范围的情况下，可以将这里定义的一般原理应用于其他实施例和应用。因此，本说明书不限于所示的实施例，而是与权利要求一致的最宽范围。
这里使用的术语仅用于描述特定示例实施例的目的，而不是限制性的。比如，除非上下文另有明确说明，这里所使用的，单数形式“一”，“一个”和“该”也可以包括复数形式。当在本说明书中使用时，术语“包括”、“包含”和/或“含有”意思是指所关联的整数，步骤、操作、元素和/或组件存在，但不排除一个或多个其他特征、整数、步骤、操作、元素、组件和/或组的存在或在该系统/方法中可以添加其他特征、整数、步骤、操作、元素、组件和/或组。
考虑到以下描述，本说明书的这些特征和其他特征、以及结构的相关元件的操作和功能、以及部件的组合和制造的经济性可以得到明显提高。参考附图，所有这些形成本说明书的一部分。然而，应该清楚地理解，附图仅用于说明和描述的目的，并不旨在限制本说明书的范围。还应理解，附图未按比例绘制。
需要理解的是，为了便于对本说明书的描述，术语“中心”、“上表面”、“下表面”、“上”、“下”、“顶”、“底”、“内”、“外”、“轴向”、“径向”、“外周”、“外部”等指示的位置关系为基于附图所示的位置关系，而不是指示所指的装 置、组件或单元必须具有特定的位置关系，不能理解为是对本说明书的限制。
应当理解，本文使用的“系统”、“装置”、“单元”和/或“模组”是用于区分不同级别的不同组件、元件、部件、部分或装配的一种方法。然而，如果其他词语可实现相同的目的，则可通过其他表达来替换所述词语。
本说明书中使用的流程图示出了根据本说明书中的一些实施例的系统实现的操作。应该清楚地理解，流程图的操作可以不按顺序实现。相反，操作可以以反转顺序或同时实现。此外，可以向流程图添加一个或多个其他操作。可以从流程图中移除一个或多个操作。
为了便于理解，本说明书首先对以下描述中将要出现的术语进行如下解释：
灵敏度：输出信号与输入信号的比值，对于振动传感器来说，输入信号可以是外界的振动激励，输出信号可以是响应于振动激励生成的电信号，振动传感器的灵敏度是指输出的电信号与输入的振动激励的比值，其中输出的电信号可以转换为振动信号的幅值，因此振动传感器的灵敏度也可以理解为输出的振动信号幅值与输入的振动激励的幅值的比值。当输出信号与输入信号的量纲相同时，灵敏度可以理解为对输入信号的放大倍数。灵敏度越高，说明振动传感器对微小的振动激励的采集性能越好。
谐振：又称“共振”，振动系统在周期性外界振动激励的作用下，当外界振动激励的频率与系统固有振动频率相同或很接近时，系统振幅急剧增大的现象。产生谐振时的频率称为“谐振频率”。
谐振峰：谐振频率的峰值。
本说明书提供的振动传感器以及麦克风可以用于采集外界振动激励，并将所述振动激励转换为电信号。所述振动传感器和所述麦克风不仅可以用于采集由于空气振动引起的振动激励，还可以用于采集由于机械振动引 起的振动激励，比如人在说话时的骨骼振动、皮肤振动，等等。所述振动传感器以及所述麦克风不仅可以用作气传导麦克风，还可以用作骨传导麦克风。
图1示出了根据本说明书的实施例提供的一种振动传感器001的侧视图；图2示出了根据本说明书的实施例提供的一种振动传感器001的主视图；图3示出了根据本说明书的实施例提供的一种振动传感器001的俯视图；图4示出了根据本说明书的实施例提供的一种振动传感器001的右视图；图5示出了图2的剖面图A-A。如图1至图5所示，振动传感器001可以包括基座200以及多个振动梁400。
基座200可以是振动传感器001的安装基体。振动传感器001的其他零部件比如振动梁400可以直接或间接地连接在基座200上。所述连接可以是任意连接方式，比如焊接、铆接、卡接、螺栓等固定连接方式，或者通过物理沉积(例如，物理气相沉积)或者化学沉积(例如，化学气相沉积)等沉积的连接。基座200可以是任意形状的结构体，比如，正方体、长方体、圆柱体、棱柱体、圆台等规则形状的结构体，或者任何不规则形状的结构体等。基座200的材料可以是Si、SiO2、SiNx等。在一些实施例中，基座200可以包括腔体220。在一些实施例中，腔体220可以贯穿基座200。在一些实施例中，腔体220可以不贯穿基座200。如图1至图5所示的示例性说明，腔体220可以贯穿基座200的上表面和下表面。
在一些实施例中，腔体220可以是一个整体。在一些实施例中，腔体220可以包括多个间隔的子腔体。为了方便描述，图1至图5所示出的腔体220为一个整体。本领域技术人员应当明白，腔体220包括多个间隔的子腔体也在本说明书的保护范围内。
腔体220在第一方向221上的尺寸可以沿第二方向变化。即腔体220在第一方向221上的尺寸随着其在第二方向222上的位置变化而变化。也 就是说，腔体220在第二方向222上的不同位置，对应的第一方向221上的尺寸是不同的。所述第一方向221和所述第二方向222不是相同的方向。即所述第一方向221和所述第二方向222呈一定的夹角。所述夹角可以是锐角，也可以是直角，还可以是钝角。在一些实施例中，所述第一方向221与所述第二方向222垂直设置。腔体220的截面形状可以为满足上述条件的任意形状，比如圆形、椭圆形、四边形、五边形、六边形、七边形、八边形，甚至可以是不规则形状，比如变曲率的曲线形状，等等。不同形状的腔体220，其对应的第一方向221和第二方向222可以是不同的。在一些实施例中，腔体220的截面形状可以是四边形，比如，正方形，所述第一方向221可以是正方形的其中一条对角线的方向，所述第二方向222可以是正方向的另一条对角线的方向。在一些实施例中，腔体220的截面形状可以是长方形，所述第一方向221可以是与长方形的长或宽呈锐角的方向，所述第二方向222可以是与第一方向垂直设置的方向。在一些实施例中，腔体220的截面可以是平行四边形，所述第一方向221可以是与平行四边形的一条边呈锐角的方向，所述第二方向222可以是与所述第一方向垂直设置的方向。在一些实施例中，腔体220的截面可以是梯形，比如等腰梯形，所述第二方向222可以是等腰梯形的高度方向，所述第一方向221可以是与所述第二方向222垂直设置的方向。在一些实施例中，所述第二方向222也可以是与等腰梯形的高度方向呈锐角的方向，所述第一方向221可以是与所述第二方向222垂直设置的方向。在一些实施例中，腔体220的截面还可以是直角梯形，所述第二方向222可以是直角梯形的高度方向，所述第一方向221可以是与所述第二方向222垂直设置的方向。在一些实施例中，腔体220的截面还可以是其他四边形，比如等腰梯形和直角梯形之外的其他形状的梯形，再比如，菱形，不规则四边形，等等。在一些实施例中，腔体220的截面可以是圆形，所述第一方向221可以是任意一条直径的方向，所述第二方向222可以是与所述第一方向221垂直设置的方 向。在一些实施例中，腔体220的截面可以是椭圆形，所述第一方向221可以是椭圆的长轴方向或短轴方向，所述第二方向222可以是与所述第一方向垂直设置的方向。
图1至图5所示的腔体220的截面为等腰梯形，其中，第二方向222为等腰梯形的高度方向，第一方向221与第二方向222垂直设置。其中，腔体220在第二方向222上的不同位置，其对应的第一方向221上的尺寸是不同的。本领域技术人员应当明白，腔体220为满足上述条件的其他形状也在本说明书的保护范围内。
腔体220的边缘可以是直线、曲线、锯齿状等。在一些实施例中，腔体220边缘可以是直线。腔体220的尺寸大小可以基于振动传感器001的应用场景以及对振动激励的需求进行设计。比如，振动传感器001用作加速度计和用作气传导麦克风时，腔体220的尺寸可能是不同的。在一些实施例中，腔体220的尺寸可能与振动梁400的尺寸有关，我们将在后面的描述中详细介绍。
如图1至图5所示，振动传感器001可以包括多个振动梁400。振动梁400可以与基座200连接，并响应于外界的振动激励产生形变，并将所述形变转换为振动信号。在一些实施例中，所述振动信号可以是电信号。所述振动激励可以是直接作用在振动梁400上的空气振动激励，也可以是作用在基座200上的机械振动激励。振动梁400可以是任意形状的板状结构体。比如，其形状可以矩形梁，也可以是梯形梁、L形梁或其它形状，比如曲线形，等等。多个振动梁400可以沿所述第二方向222依次排列在基座200上。在一些实施例中，振动梁400可以是固支梁，即振动梁400的两端可以与基座200连接，而中间部位可以悬空于腔体220上。具体地，每个振动梁400可以包括固定端420和移动端440。在一些实施例中，每个振动梁400还可以包括配重块460。
固定端420可以位于振动梁400的两端。固定端420可以沿所述第一方向221与基座200连接。即固定端420的两端可以沿第一方向221分布。为了方便描述，我们将固定端420的两端分布的方向定义为振动梁400的长度方向，或轴向方向。固定端420与基座200之间的连接可以是任意连接方式，比如焊接、铆接、卡接、螺栓等固定连接方式，或者通过物理沉积(例如，物理气相沉积)或者化学沉积(例如，化学气相沉积)等沉积的连接。固定端420与基座200可以是绝缘连接，比如，固定端420通过绝缘层与基座200连接。固定端420的材料可以是Si、SiO2、SiNx等。
在一些实施例中，固定端420可以与基座200的上表面、下表面或腔体220的内壁固定连接。图1至图5所示的示意图中，以固定端420与基座200的上表面连接为例进行描述。本领域技术人员应当明白，固定端420与基座200的其他位置连接也在本说明书的保护范围内。
移动端440可以与固定端420连接，并位于固定端420之间，悬空于腔体220中。所述“悬空于所述腔体220中”可以表示悬空设置于基座200的腔体220的内部、下方或者上方，不与基座200接触。为了方便展示，如图1至图5所示，仅作为示例性说明，移动端440可以悬空于腔体220的上方。
移动端420可以响应于所述振动激励产生形变，并将所述形变转换为振动信号。在一些实施例中，移动端440可以包括压电传感部件442和连接梁444。压电传感部件442可以将移动端420的所述形变转化为所述振动信号，所述振动信号可以包括电信号。连接梁444可以连接压电传感部件442。
压电传感部件442可以包括压电材料。如前所述，振动传感器001可以接收外部振动激励，并将外部振动激励转换为电信号。具体地，所述外部振动激励可以使移动端4440发生形变，进而促使压电传感部件442中的 压电材料发生形变，从而产生应力，并输出电压，从而将外部的振动激励转换为电信号，再通过后端电路进行采集、调理，得到所需的电信号。压电材料均符合压电效应本构方程。对于振动传感器001而言，应用的是正压电效应，其本构方程为：
Figure PCTCN2022094006-appb-000001
其中，d ij为压电应变系数，T j为应力，
Figure PCTCN2022094006-appb-000002
为恒力作用下的介电常数，E j为电场强度，D i为电位移。对于振动传感器001，电位移D i主要由外部振动激励形成的应力引起。本构方程可以进一步简化为：
D i＝d ijT j
由上述公式可知，压电材料输出电位移D i的大小取决于材料自身的压电应变系数d ij以及压电材料在工作时形成的应力T j。在确定压电材料后，通过设计结构，增加有效压电材料部分区域的应力，是提升压电传感部件442输出的一种有效措施。
压电传感部件442可以悬空于腔体220中。在一些实施例中，压电传感部件442可以分布在移动端440的所有区域。在一些实施例中，压电传感部件442也可以分布在移动端440的部分区域。压电传感部件442可以将移动端440的所述形变转化为振动信号并进行输出。移动端440与基座200之间发生相对运动时，移动端440不同位置的形变程度不同，对压电传感部件442产生的形变应力也不同。为了提高振动传感器001的灵敏度，在一些实施例中，压电传感部件442能够仅设置于移动端440形变程度和应力较大的位置，从而提高振动传感器001的灵敏度。为了方便描述，我们将移动端440形变程度和应力较大的位置定义为第一区域，将移动端440形变程度和应力较小的位置定义为第二区域。所述电信号在所述第一区域的电压高于所述第二区域。在一些实施例中，压电传感部件442能够仅设置于所述第一区域。需要说明的是，所述第一区域和所述第二区域是指移 动端440对应的区域，不包括固定端420的区域，即振动梁400与基座200的连接处的区域。
移动端440所承受的应力的方向与移动端440的整体变形方向有关。当移动端440向下振动与向上振动时其变形方向是相反的，此时，移动端440上同一部位所承受的应力方向也是相反的，在向上振动中受压应力的区域在向下振动中会受到拉应力，在向上振动中受到拉应力的区域在向下振动中会受到压应力。比如，当移动端440向下振动时，移动端440在发生变形时，移动端440下表面沿轴向的应力关于移动端440的中心对称，且在中心一侧会从拉应力减小到零，再从零增大到压应力，零点位于移动端440轴向长度的四分之一和四分之三处。当移动端440向上振动时，移动端440在发生变形时440，移动端440下表面沿轴向的应力关于移动端440的中心对称，且在中心一侧会从压应力减小到零，再从零增大到拉应力，零点位于移动端440轴向长度的四分之一和四分之三处。
因此，为了提高压电传感部件442的灵敏度，压电传感部件440可以布置在应力较大且具有相同应力方向的区域。为了方便展示，下面的描述中我们以移动端440向下振动为例进行描述。当移动端440向下振动时，在一些实施例中，压电传感部件442可以布置在压应力较大的区域。比如，压电传感部件442可以布置在移动端440的两端靠近固定端420的部位，且与固定端420的距离小于移动端440长度的四分之一的范围内。即所述第一区域可以是在移动端440的两端，与固定端420的距离小于移动端440长度的四分之一的范围内。比如，移动端440可以包括至少2个压电传感部件442。以压电传感部件442的数量为2为例，2个压电传感部件442可以分别靠近固定端420的两端，且每个压电传感部件442与其靠近的固定端420的距离可以小于移动端440长度的1/4。此时，压电传感部件442的两端分别与固定端420和连接梁444连接。
在一些实施例中，当移动端440向下振动时，压电传感部件442可以布置在拉应力较大的区域。比如，压电传感部件442可以布置在移动端440，且与固定端420中的一端的距离在移动端440的长度的四分之一至四分之三的范围内。即所述第一区域可以是在移动端440，且与固定端420中的一端的距离在移动端440的长度的四分之一至四分之三的范围内。
需要说明的是，压电传感部件442与固定端420的距离可以是压电传感部件442上的任意位置与固定端420的距离。比如，压电传感部件442与固定端420的距离可以是压电传感部件442的中心位置与固定端420的距离，也可以是压电传感部件442的端部(任意一端的端部)与固定端420的距离，还可以是压电传感部件442的其他部位与固定端420的距离。
压电传感部件442可以包括压电单晶结构组成的叠层结构和压电双晶结构组成的叠层结构中的至少一种。在一些实施例中，压电传感部件442可以是压电单晶结构组成的叠层结构。图6示出了根据本说明书的实施例提供的一种压电传感部件442为压电单晶结构442a的示意图。在一些实施例中，所述压电单晶结构442a沿压电传感部件442的厚度方向从下至上依次可以包括弹性层442a-2、底电极层442a-4、压电层442a-6、顶电极层442a-8。在一些实施例中，所述压电单晶结构442a沿压电传感部件442的厚度方向从上至下依次可以包括弹性层442a-2、顶电极层442a-8、压电层442a-6、底电极层442a-4。为了方便展示，我们以所述压电单晶结构442a沿压电传感部件442的厚度方向从下至上依次可以包括弹性层442a-2、底电极层442a-4、压电层442a-6、顶电极层442a-8为例进行描述。在一些实施例中，压电单晶结构442a还可以包括连接端子层442a-9。
弹性层442a-2可以与固定端420和连接梁444直接或间接地固定连接。所述连接可以是任意连接方式，比如焊接、铆接、卡接、螺栓等固定连接方式，或者通过物理沉积(例如，物理气相沉积)或者化学沉积(例如， 化学气相沉积)等沉积的连接。当振动梁400受到外界振动激励时，弹性层442a-2基于所述振动激励产生所述形变。弹性层442a-2由在外力作用下容易发生形变的材料制成。弹性层442a-2可以为采用半导体材料制成的易变形的结构。弹性层442a-2可以是单层材料，比如Si、SiO2、SiNx、SiC等，也可以是多层材料，例如Si/SiO2，SiO2/Si，Si/SiNx，SiNx/Si等。弹性层442a-2厚度可以是1um-10um。在一些实施例中，弹性层442a-2厚度可以是1um-3um。在一些实施例中，弹性层442a-2厚度可以是2um-6um。在一些实施例中，弹性层442a-2厚度可以是4um-8um。在一些实施例中，弹性层442a-2厚度可以是6um-10um。
压电传感部件442可以包括压电层442a-6。压电层442a-6是指受到外力作用时可以在其两端面产生电压的结构。压电层442a-6可以与基座200直接或间接地固定连接。所述连接可以是任意连接方式，比如焊接、铆接、卡接、螺栓等固定连接方式，或者通过物理沉积(例如，物理气相沉积)或者化学沉积(例如，化学气相沉积)等沉积的连接。在一些实施例中，压电层442a-6在受到振动信号时可以发生所述形变，并基于所述形变产生电压。
压电层442a-6可以直接或间接地附着在弹性层442a-2的表面。在一些实施例中，弹性层442a-2可以与固定端420和连接梁444连接，压电层442a-6通过弹性层442a-2与固定端420和连接梁444连接。以振动梁400位于基座200上表面为例进行说明，在一些实施例中，压电层442a-6可以位于弹性层442a-2远离基座200的一侧。在一些实施例中，压电层442a-6可以位于弹性层442a-2靠近基座200的一侧。当振动梁400受到外界振动激励时，弹性层442a-2基于所述振动激励产生所述形变；压电层442a-6可以基于压电效应，在弹性层442a-2的所述形变作用下受到应力产生电压(电势差)。
对于弯曲变形的梁结构，包括悬臂梁、简支梁、固支梁等，其产生一阶弯曲变形时，沿厚度方向均存在一个中性层，中性层的两侧材料处于相反的应力状态，例如固支梁向上弯曲变形时，中性层以上部分支撑臂材料处于拉应力状态，中性层以下部分支撑臂材料处于压应力状态。压电材料输出电信号的正负与应力状态有关，为了最大化压电材料的输出效率，需要将压电层442a-6布置在中性层的一侧。
压电材料输出电信号的大小与应力大小有关，厚度方向上的各层材料分布位置会影响各层材料在相同振动激励下的应力分布。在一些实施例中，将压电层442a-6分布在弹性层442a-2的一侧。具体地，将压电层442a-6分布在振动梁400的厚度方向的靠近上表面或下表面位置，使得压电层442a-6远离中性层，最大化压电层442a-6应力大小。
在一些实施例中，压电层442a-6可以是半导体的沉积工艺(例如磁控溅射、MOCVD)获得的压电聚合物薄膜。在一些实施例中，压电层442a-6的材料可以包括压电晶体材料和压电陶瓷材料。压电晶体是指压电单晶体。在一些实施例中，压电晶体材料可以包括水晶、闪锌矿、方硼石、电气石、红锌矿、GaAs、钛酸钡及其衍生结构晶体、KH 2PO 4、NaKC 4H 4O 6·4H 2O(罗息盐)等，或其任意组合。压电陶瓷材料是指由不同材料粉粒之间的固相反应和烧结而获得的微细晶粒无规则集合而成的压电多晶体。在一些实施例中，压电陶瓷材料可以包括钛酸钡(BT)、锆钛酸铅(PZT)、铌酸铅钡锂(PBLN)、改性钛酸铅(PT)、氮化铝(AIN)、氧化锌(ZnO)或其任意组合。在一些实施例中，压电层442a-6的材料还可以为压电聚合物材料，例如聚偏氟乙烯(PVDF)等。在一些实施例中，压电层442a-6厚度可以大于500nm。在一些实施例中，压电层442a-6厚度可以是20-500um，比如当振动传感器001用于宏观器件中时。在一些实施例中，压电层442a-6厚度可以是0.5-1.5um，比如当振动传感器001用于MEMS器件中时。
在一些实施例中，弹性层442a-2厚度与压电层442a-6厚度比值可以是1-10。在一些实施例中，弹性层442a-2厚度与压电层442a-6厚度比值可以是2-7。
底电极层442a-4以及顶电极层442a-8分别分布于压电层442a-6的两侧表面。压电层442a-6可以位于底电极层442a-4以及顶电极层442a-8之间。压电层442a-6可以在外界振动激励的作用下随着弹性层442a-2的所述形变产生形变，在形变应力作用下，产生电压。底电极层442a-4以及顶电极层442a-8可以将所述电压进行采集生成所述电信号。其中，底电极层442a-4与顶电极层442a-8的位置对齐。如前所述，压电层442a-6与弹性层442a-2连接，压电层442a-6分布于弹性层442a-2的一侧。底电极层442a-4可以分布于压电层442a-6和弹性层442a-2之间，顶电极层442a-8分布于压电层442a-6远离弹性层442a-2的一侧。
在一些实施例中，底电极层442a-4以及顶电极层442a-8为导电材质结构。示例性的导电材质可以包括金属、合金材料、金属氧化物材料、石墨烯等，或其任意组合。在一些实施例中，金属与合金材料可以包括镍、铁、铅、铂、钛、铜、钼、锌，或其任意组合。在一些实施例中，合金材料可以包括铜锌合金、铜锡合金、铜镍硅合金、铜铬合金、铜银合金等，或其任意组合。在一些实施例中，金属氧化物材料可以包括RuO 2、MnO 2、PbO 2、NiO等，或其任意组合。
底电极层442a-4可以包括至少一个底压电电极片。顶电极层442a-8可以包括至少一个顶压电电极片。所述至少一个底压电电极片中的每个与所述至少一个顶压电电极片中的至少一个位置对齐。在一些实施例中，每个所述底压电电极片的位置对应一个顶压电电极片。在一些实施例中，每个所述底压电电极片的位置对应多个顶压电电极片，比如，2个、3个、4个，等等。所述多个顶压电电极片以所述底压电电极片为公共端组成串联输出单元，以增大输出电压。提高灵敏度。所述多个顶压电电极片也可以与所 述底压电电极片组成并联输出单元，以增大输出电荷，提高灵敏度。压电传感部件442中可以只包括串联输出单元，也可以只包括并联输出单元，也可以既包括串联输出单元又包括并联输出单元。
在一些实施例中，底电极层442a-4厚度可以是50-200nm。在一些实施例中，底电极层442a-4厚度可以是100-150nm。在一些实施例中，底电极层442a-4厚度可以是100-200nm。在一些实施例中，底电极层442a-4厚度可以是80-150nm。在一些实施例中，底电极层442a-4厚度可以是150-200nm。在一些实施例中，底电极层442a-4厚度可以是120-150nm。在一些实施例中，底电极层442a-4厚度可以是120-200nm。在一些实施例中，底电极层442a-4厚度可以是150-200nm。在一些实施例中，顶电极层442a-8厚度可为50-200nm。在一些实施例中，顶电极层442a-8厚度可以是100-150nm。在一些实施例中，顶电极层442a-8厚度可以是100-200nm。在一些实施例中，顶电极层442a-8厚度可以是80-150nm。在一些实施例中，顶电极层442a-8厚度可以是150-200nm。在一些实施例中，顶电极层442a-8厚度可以是120-150nm。在一些实施例中，顶电极层442a-8厚度可以是120-200nm。在一些实施例中，顶电极层442a-8厚度可以是150-200nm。
在一些实施例中，压电单晶结构442a还可以包括连接端子层442a-9，与底电极层442a-4或顶电极层442a-8连接，以将所述电信号输出至外部处理电路。连接端子层442a-9可以与底电极层442a-4和顶电极层442a-8的材料相同，也可以不同。在一些实施例中，连接端子层442a-9的厚度可以是100-200nm。在一些实施例中，连接端子层442a-9的厚度可以是150-200nm。在一些实施例中，连接端子层442a-9的厚度可以是100-150nm。在一些实施例中，连接端子层442a-9的厚度可以是120-200nm。在一些实施例中，连接端子层442a-9的厚度可以是160-200nm。
在一些实施例中，压电传感部件442可以是压电单晶结构组成的叠层结构。图7示出了根据本说明书的实施例提供的一种压电传感部件442的 压电双晶结构442b的示意图。如图7所示，压电双晶结构442b沿压电传感部件442的厚度方向从下至上依次可以包括电极层442b-2、压电层442b-4、电极层442b-2、压电层442b-4以及电极层442b-2。在一些实施例中，压电双晶结构442b还可以包括连接端子层442b-9。电极层442b-2与上述的底电极层442a-4或顶电极层442a-8的材料的厚度基本一致，在此不再赘述。压电层442b-4与上述压电层442a-6的材料的厚度基本一致，在此不再赘述。连接端子层442b-9与上述连接端子层442a-9的材料的厚度基本一致，在此不再赘述。
连接梁444可以连接压电传感部件442，比如，连接梁444可以位于2个压电传感部件442之间，并连接2个压电传感部件442。连接梁444材料可以是Si、SiO 2、SiNx等。
如图1至图5所示，为了提高振动传感器001的灵敏度，每个振动梁400还可以包括配重块460。配重块460可以与移动端440连接。配重块460可以直接与移动端440连接，也可以间接与移动端440连接。具体地，配重块460可以与连接梁444连接。在一些实施例中，配重块460可以位于移动端440的中间位置，以使配重块460在第一方向221上可以位于腔体220的中心。在移动端440响应于外界的振动激励产生形变时，配重块460可以基于所述形变产生位移。在一些实施例中，配重块460可以相对于移动端420向一侧凸出，悬空于腔体220中。比如，配重块460可以相对于移动端420向上方凸出，悬空于腔体220中。配重块460也可以相对于移动端420向下方凸出，悬空于腔体220中。
配重块460可以使得移动端420在外力作用下更容易发生变形，从而增加压电传感部件442输出的所述电信号。在一些实施例中，通过改变配重块460的大小、形状、位置可以提高压电传感部件442的输出的所述电信号。配重块460的设置可以改变振动梁400振动时的固有频率和振动幅值。
在一些实施例中，配重块460的材料可以是Si、SiO 2、SiNx等。配重块460的平面形状可以是圆形、三角形、四边形、多边形，等等。以配重块460的平面形状为四边形为例。在一些实施例中，配重块460的长度可以是50um-500um。在一些实施例中，配重块460的长度可以是80um-300um。在一些实施例中，配重块460的宽度可以是50um-500um。在一些实施例中，配重块460的宽度可以是80um-200um。在一些实施例中，配重块460的宽度可以大于、等于、小于振动梁400的宽度。在一些实施例中，配重块460的宽度可以等于振动梁400的宽度。
由于配重块460与移动端420刚性连接，配重块460所在位置对应的移动端420的形变较小，有效电信号的电压较小。而移动端420在靠近配重块460的位置的形变和应力较大，有效电信号的电压也较大。因此，在一些实施例中，振动传感器001还可以额外在靠近配重块460的位置增设压电传感部件442。增设的压电传感部件442可以设置在靠近配重块460且围绕配重块460的周向区域。
在一些实施例中，当所述振动激励为机械振动激励时(比如振动传感器001用于骨传导麦克风中)，每个振动梁400可以包括配重块460。在一些实施例中，当所述振动激励为空气振动激励时(比如振动传感器001用于气传导麦克风中)，每个振动梁400可以不包括配重块460。
如前所述，腔体220在第一方向221上的尺寸可以沿第二方向222变化。即腔体220在第一方向221上的尺寸随着其在第二方向222上的位置变化而变化。也就是说，腔体220在第二方向222上的不同位置，对应的第一方向221上的尺寸是不同的。多个振动梁400可以沿所述第二方向222依次排列在基座200上。而每个振动梁400的移动端440悬空在腔体220上。也就是说，多个振动梁400分别位于腔体220在第二方向222上的不同位置。因此，每个振动梁400的移动端440悬空于腔体220上的部分在第一方向221上的尺寸(振动梁400的轴向尺寸)是不同的。因此，每个 振动梁400具有不同的固有频率。多个振动梁400对应多个振动频率。每个振动梁400响应于外界的振动激励，生成包括其对应的固有频率在内的子目标频率窗口内的振动信号。不同的振动梁400生成的振动信号对应不同的子目标频率窗口。所述多个振动梁400对应的多个子目标频率窗口覆盖不同的频率范围。所述多个子目标频率窗口构成目标频率窗口。在一些实施例中，所述目标频率窗口可以是连续的频率窗口。所述多个子目标频率窗口共同构成连续的所述目标频率窗口。在一些实施例中，所述目标频率窗口可以是任意频率范围。所述目标频率窗口可以基于振动传感器001的使用场景进行设定。比如，振动传感器001用作麦克风和用作加速度传感器时的目标频率窗口可能是不同的。在一些实施例中，多个振动梁400对应的多个固有频率可以均匀地分布在所述目标频率窗口内。在一些实施例中，多个振动梁400对应的多个固有频率可以非均匀地分布在所述目标频率窗口内。
如前所述，所述子目标频率窗口可以时包括所述固有频率在内的频率窗口。在一些实施例中，所述子目标频率窗口可以是相对于固有频率对称设置的频率窗口。在一些实施例中，所述子目标频率窗口可以是相对于固有频率非对称设置的频率窗口。在一些实施例中，所述子目标频率窗口的长度范围应在在预先设定的长度范围内。在一些实施例中，我们可以根据子目标频率窗口对应的振动信号的幅值确定子目标频率窗口覆盖的范围。比如，所述子目标频率窗口内的振动信号的幅值应不小于所述固有频率对应的谐振峰值的预设比例。所述预设比例可以是预先设定的任意比例，比如，20％、30％、50％，等等。在一些实施例中，我们可以根据子目标频率窗口对应的振动信号的灵敏度确定子目标频率窗口覆盖的范围。比如，所述子目标频率窗口内的振动信号的灵敏度应不小于预先设定的阈值。
在一些实施例中，我们可以根据振动传感器001的使用场景以及使用需求，确定振动传感器001对应的目标频率窗口的范围，从而确定多个振 动梁400的数量，以及每个振动梁400对应的固有频率和子目标频率窗口。在一些实施例中，当振动传感器001用作麦克风(比如骨传导麦克风)时，所述目标频率窗口可以是100Hz-5000Hz。在一些实施例中，当振动传感器001的所述目标频率窗口可以是20Hz-5000Hz。在一些实施例中，振动梁400的数量可以是2个以及2个以上。比如，在一些实施例中，振动梁400的数量可以是3-50个。在一些实施例中，振动梁400的数量可以是10-20个。在一些实施例中，振动梁400的数量可以根据振动传感器001的使用场景以及使用需求，基于振动传感器001所需的谐振峰的数量进行确定。在只利用振动梁400一阶谐振峰的情况下，振动梁400的个数等于谐振峰的个数。在利用振动梁400的高阶谐振峰的情况下，则振动梁400的个数少于谐振峰的个数。但通常高阶谐振峰的信号强度远小于一阶谐振峰，因此在振动传感器001中通常利用振动梁400的一阶谐振峰。
振动梁400的固有频率由振动梁400本身的特性决定。振动梁400的固有频率不仅与振动梁400的材料特性有关，还与振动梁400悬空于腔体200上的移动端440的尺寸有关。如前所述，腔体220在第二方向222上的不同位置，其对应的第一方向221上的尺寸是不同的。因此，我们可以根据腔体220在第一方向221上的尺寸、每个振动梁400在腔体220上的位置以及每个振动梁400的尺寸来设计每个振动梁400，使每个振动梁400的固有频率满足预设值。具体地，我们可以通过改变腔体220在第一方向221上的尺寸、每个振动梁400在腔体220上的位置以及每个振动梁400的尺寸，使得每个振动梁400悬空于腔体220上的移动端440满足预设的规则，从而使得每个振动梁400的固有频率满足预设值。所述预设值可以是预先确定的每个振动梁400的固有频率。
在一些实施例中，多个振动梁400的总体尺寸可以是相同的，比如，振动梁400的轴向长度、宽度以及厚度的尺寸可以是相同的，通过改变振动梁400在腔体220上的位置以及腔体220在第一方向221上的尺寸，使 得多个振动梁400悬空于腔体220上的移动端440的尺寸不同，从而使多个振动梁400具有不同的固有频率，并使固有频率满足预设值。此时，无需对每个振动梁400的尺寸进行定制加工，只需改变腔体220的尺寸以及振动梁400在腔体220上的位置即可实现对多个振动梁400的固有频率的设计，使其满足预设值。这种方法可以降低加工难度和加工成本，同时提高振动传感器001的精度。
在一些实施例中，多个振动梁400的总体可以是不同的，比如，振动梁400的轴向长度、宽度以及厚度中的至少一个方向上的尺寸可以是不同的，通过改变振动梁400在腔体220上的位置、腔体220在第一方向221上的尺寸以及多个振动梁400的尺寸，使得多个振动梁400悬空于腔体220上的移动端440的尺寸不同，从而使多个振动梁400具有不同的固有频率，并使固有频率满足预设值。
为了方便描述，我们以多个振动梁400的总体尺寸是相同的为例进行描述。
例如，以所述目标频率窗口为20Hz-5000Hz，振动梁400的数量为10，10个振动梁400的固有频率在目标频率窗口内均匀分布为例，各个振动梁400的固有频率之间需要间隔一定的频带宽度以便于区分，各固有频率之间的频带宽度为50Hz-400Hz。在一些实施例中，各固有频率之间的频带宽度为100Hz-200Hz。在一些实施例中，各振动梁400之间的间隙宽度可以为1um-200um。在一些实施例中，各振动梁400之间的间隙宽度为10um-100um。不同振动梁400之间的间隙宽度可以相等也可以不相等。
在一些实施例中，各振动梁400悬空于腔体220上方的移动端440在第一方向221上的长度可以线性变化，也可以非线性变化。在一些实施例中，各振动梁400在腔体220上可以按移动端440的长度依次排列，也可以按照其他规律排列。各振动梁400的平面形状可以是矩形、梯形、曲线形等。在一些实施例中，各振动梁400的横截面宽度可以是50um-300um。 在一些实施例中，各振动梁400的横截面宽度可以是80um-200um。在一些实施例中，各振动梁400的轴向长度可以是100um-1300um。在一些实施例中，各振动梁400的轴向长度可以是200um-1200um。
如前所述，在一些实施例中，振动梁400可以不包括配重块460。比如，在气传导麦克风中，由于空气振动激励的能量较小，此时，可以减小相邻振动梁400之间的间隙宽度，以增大振动信号的输出。
在一些实施例中，振动梁400还可以包括配重块460。此时，我们可以根据腔体220在第一方向221上的尺寸、每个振动梁400在腔体220上的位置、每个振动梁400的尺寸以及配重块460的尺寸来设计每个振动梁400，使每个振动梁400的固有频率满足预设值。具体地，我们可以通过改变腔体220在第一方向221上的尺寸、每个振动梁400在腔体220上的位置、每个振动梁400的尺寸以及及配重块460的尺寸，使得每个振动梁400悬空于腔体220上的移动端440满足预设的规则，从而使得每个振动梁400的固有频率满足预设值。
图8示出了根据本说明书的实施例提供的一种归一化位移共振曲线图。图8所示的曲线可以是多个振动梁400中的一个对应的归一化位移共振曲线图。如图8所示，横轴为外界的振动激励ω和振动梁400的固有频率ω 0的比值，纵轴为归一化位移A。归一化位移A可以是振动梁400的位移振幅与静态位移振幅的比值。所述静态位移振幅可以是外界振动激励为恒定激励(即ω＝0)时的位移振幅。其中，
Figure PCTCN2022094006-appb-000003
其中，M为振动梁400的质量，即移动端440和配重块460的质量。K为振动梁400的弹性系数。如图8所示，当振动梁400的固有频率ω 0和外界的振动激励ω相等时，归一化位移A达到最大，即在谐振频率处的位移达到峰值(即谐振峰)。因此，为了提高振动传感器001的灵敏度，对于压电传感部件442采集的振动信号，我们可以选取振动梁400的固有频率ω 0附近的预设频率范围作为每个 振动梁400对应的子目标频率窗口，并将子目标频率窗口内的振动信号作为振动梁400生成的振动信号。
图8中所示的不同的曲线分别对应振动梁400的6个不同的力学品质因素Q。其中，
Figure PCTCN2022094006-appb-000004
其中，R为振动梁400的阻尼。如图8所示，在振动梁400的固有频率ω 0确定时，振动梁400的力学品质因素Q越大，其对应的归一化位移A也越大。归一化位移A其对应的压电传感部件442输出的振动信号的电信号也越大。
当基座200上多个振动梁400时，多个振动梁400所产生的振动信号会相互耦合和叠加。若基座200刚度和质量远大于振动梁400的刚度和质量，则不同振动梁400之间的耦合作用可以忽略。即可以认为振动传感器001向外输出的振动信号的电信号的线性叠加。图9示出了根据本说明书的实施例提供的一种振动信号的示意图。图9所示的振动信号为多个振动梁400生成的多个振动信号的线性叠加。在一些实施例中，为了便于后续信号处理，我们可以使不同振动梁400输出的振动信号在其对应的所述固有频率上的偏差在预设偏差范围内，从而使不同振动梁400输出的振动信号在其对应的所述固有频率上可以在同一量级或相近的量级内，以便于计算。所述预设偏差范围可以是预先设定的便于信号计算的范围。所述预设偏差范围可以基于经验取值，也可以基于实验统计的方式获取，还可以基于机器学习的方式获取。所述不同振动梁400输出的振动信号在其对应的所述固有频率上的偏差在预设偏差范围内可以是不同振动梁400输出的振动信号的归一化位移A在其对应的所述固有频率上的偏差不超过所述预设偏差范围。在一些实施例中，所述预设的偏差范围可以是任意值，比如，±30％、±20％、±10％，等等。在一些实施例中，我们可以设计每个振动梁400的力学品质因素Q，使得多个振动梁400的力学品质因素Q的偏差在预设偏差范围内，从而使得不同振动梁400输出的振动信号的归一化位移A在其对 应的所述固有频率上的偏差在所述预设偏差范围内。在一些实施例中，我们可以通过设计配重块460的尺寸，使其与其对应的振动梁400的所述固有频率相匹配，使得每个振动梁400的力学品质因素Q的偏差在预设偏差范围内，从而使得每个振动梁400对应的所述振动信号在其对应的所述固有频率上的偏差在预设偏差范围内。具体地，我们在确定振动梁400的固有频率ω 0的前提下，通过设计和更改腔体220在第一方向221上的尺寸、振动梁400在腔体220上的位置、移动端440的尺寸以及配重块460的尺寸，使得每个振动梁400的力学品质因素Q的偏差在预设偏差范围内，从而使得每个振动梁400对应的所述振动信号在其对应的所述固有频率上的偏差在预设偏差范围内。
在一些实施例中，不同振动梁400输出的振动信号的归一化位移A在其对应的所述固有频率上的偏差也可以不在预设偏差范围内。本领域技术人员应当明白，不同振动梁400输出的振动信号的归一化位移A在其对应的所述固有频率上不在预设偏差范围内也不影响振动信号的叠加处理，也在本说明书的保护范围内。
本说明书还提供一种麦克风，所述麦克风可以包括壳体和本说明书提供的振动传感器001。振动传感器001可以安装在所述壳体中。所述壳体可以与基座200固定连接。所述壳体与基座200可以是一体结构，也可以是分体式结构，并通过固定连接方式连接在一起，比如，焊接、铆接、螺栓连接、粘接，等等。当所述壳体受到外力振动时(例如，人体说话时脸部的振动带动壳体振动)，所述壳体振动带动基座200振动。由于振动梁400与所述壳体结构(或基座200)各自的属性不同，使得振动梁400与所述壳体结构(或基座200)之间无法保持完全一致的移动，从而产生相对运动，进而使振动梁400产生所述形变。压电传感部件442将所述形变转换为所述振动信号并输出。
在一些实施例中，所述麦克风还可以包括信号合成电路。所述信号合成电路同每个振动梁400的压电传感部件442连接，运行时采集每个压电传感部件442采集的所述振动信号，并进行信号合成处理，以生成目标频率窗口内的振动信号。所述信号合成处理可以是将多个振动梁400生成的多个振动信号进行线性叠加。
仅作为示例性说明，本说明书描述的所述麦克风可以应用于各种电子产品。比如，耳机(例如，骨传导耳机或空气传导耳机、无线耳机、有线耳机)、智能眼镜、智能穿戴式设备、智能头盔、智能腕表等具有语音采集功能的设备。
综上所述，本说明书提供的振动传感器001和麦克风，振动梁400通过两端的固定端420固定在基座200上，而中间部分的移动端440悬空在腔体220中，并响应于外界的振动激励产生形变。振动传感器001以及麦克风通过改变腔体220的结构和尺寸以及振动梁400的尺寸和位置，使得多个振动梁400悬空于腔体220上的部分的尺寸不同，从而使得不同的振动梁400具有不同的固有频率，在振动激励下生成不同频率的谐振峰。多个振动梁400可以生成多个不同频率范围的振动信号，多个不同频率范围的振动信号共同构成宽频带的振动信号，从而使得振动传感器004的频率响应范围更宽。同时，振动传感器001以及麦克风选取的振动信号为谐振峰附近的预设范围内的振动信号，因此，其灵敏度更高。并且，振动传感器001以及麦克风通过对基座200腔体220的尺寸进行设计来实现多谐振峰以及宽频带的目的，其结构简单，加工难度低，加工成本低且精度更高，振动信号的采集结果更准确。同时，基于本说明书提供的振动传感器001和麦克风002采集的振动信号，在后续对振动信号的处理，使得后期算法处理时，可以利用低阶滤波器从图9所示的振动信号中提取出截止边缘陡峭的不同频率下输出的位移信号，从而提取出不同频率下的输入信号，从而避免后期算法利用高阶滤波器对信号进行提取，减少算法计算量。
上述对本说明书特定实施例进行了描述。其他实施例在所附权利要求书的范围内。在一些情况下，在权利要求书中记载的动作或步骤可以按照不同于实施例中的顺序来执行并且仍然可以实现期望的结果。另外，在附图中描绘的过程不一定要求示出特定顺序或者连续顺序才能实现期望的结果。在某些实施方式中，多任务处理和并行处理也是可以的或者是可能有利的。
综上所述，在阅读本详细公开内容之后，本领域技术人员可以明白，前述详细公开内容可以仅以示例的方式呈现，并且可以不是限制性的。尽管这里没有明确说明，本领域技术人员可以理解本说明书需求囊括对实施例的各种合理改变，改进和修改。这些改变，改进和修改旨在由本说明书提出，并且在本说明书的示例性实施例的精神和范围内。
此外，本说明书中的某些术语已被用于描述本说明书的实施例。例如，“一个实施例”，“实施例”和/或“一些实施例”意味着结合该实施例描述的特定特征，结构或特性可以包括在本说明书的至少一个实施例中。因此，可以强调并且应当理解，在本说明书的各个部分中对“实施例”或“一个实施例”或“替代实施例”的两个或更多个引用不一定都指代相同的实施例。此外，特定特征，结构或特性可以在本说明书的一个或多个实施例中适当地组合。
应当理解，在本说明书的实施例的前述描述中，为了帮助理解一个特征，出于简化本说明书的目的，本说明书将各种特征组合在单个实施例、附图或其描述中。然而，这并不是说这些特征的组合是必须的，本领域技术人员在阅读本说明书的时候完全有可能将其中一部分特征提取出来作为单独的实施例来理解。也就是说，本说明书中的实施例也可以理解为多个次级实施例的整合。而每个次级实施例的内容在于少于单个前述公开实施例的所有特征的时候也是成立的。
本文引用的每个专利，专利申请，专利申请的出版物和其他材料，例 如文章，书籍，说明书，出版物，文件，物品等，可以通过引用结合于此。用于所有目的的全部内容，除了与其相关的任何起诉文件历史，可能与本文件不一致或相冲突的任何相同的，或者任何可能对权利要求的最宽范围具有限制性影响的任何相同的起诉文件历史。现在或以后与本文件相关联。举例来说，如果在与任何所包含的材料相关联的术语的描述、定义和/或使用与本文档相关的术语、描述、定义和/或之间存在任何不一致或冲突时，使用本文件中的术语为准。
最后，应理解，本文公开的申请的实施方案是对本说明书的实施方案的原理的说明。其他修改后的实施例也在本说明书的范围内。因此，本说明书披露的实施例仅仅作为示例而非限制。本领域技术人员可以根据本说明书中的实施例采取替代配置来实现本说明书中的申请。因此，本说明书的实施例不限于申请中被精确地描述过的实施例。

Claims (13)

  1. 一种振动传感器，其特征在于，包括：
    基座，包括腔体；以及
    多个振动梁，依次排列在所述基座上，其中，每个振动梁包括：
    固定端，位于所述振动梁的两端，与所述基座连接；以及
    移动端，与所述固定端连接，并位于所述固定端之间，悬空于所述腔体中，
    其中，所述每个振动梁悬空于所述腔体上的尺寸不同，具有不同的固有频率，所述每个振动梁响应于外界的振动激励，生成包括其对应的固有频率在内的子目标频率窗口内的振动信号。
  2. 如权利要求1所述的振动传感器，其特征在于，所述多个振动梁对应的多个子目标频率窗口覆盖不同的频率范围，所述多个子目标频率窗口构成目标频率窗口。
  3. 如权利要求2所述的振动传感器，其特征在于，所述多个振动梁对应的多个固有频率均匀分布在所述目标频率窗口内。
  4. 如权利要求1所述的振动传感器，其特征在于，所述腔体在第一方向上的尺寸沿第二方向变化，所述多个振动梁沿所述第二方向排列在所述基座上，所述固定端沿所述第一方向与所述基座连接。
  5. 如权利要求4所述的振动传感器，其特征在于，所述腔体在所述第一方向上的尺寸、所述每个振动梁在所述腔体上的位置以及所述每个振动 梁的尺寸满足预设的规则，使得所述每个振动梁的所述固有频率满足预设值。
  6. 如权利要求4所述的振动传感器，其特征在于，所述移动端响应于所述振动激励产生形变，所述移动端包括：
    压电传感部件，将所述形变转化为所述振动信号，所述振动信号包括电信号；以及
    连接梁，与所述压电传感部件连接。
  7. 如权利要求6所述的振动传感器，其特征在于，所述压电传感部件与所述固定端中的一端的距离在所述移动端的长度的四分之一至四分之三的范围内。
  8. 如权利要求6所述的振动传感器，其特征在于，所述移动端包括：
    2个所述压电传感部件，分别靠近所述固定端的两端，且每个所述压电传感部件与其靠近的所述固定端的距离小于所述移动端长度的1/4。
  9. 如权利要求6所述的振动传感器，其特征在于，所述压电传感部件包括压电单晶结构和压电双晶结构中的至少一种。
  10. 如权利要求1所述的振动传感器，其特征在于，所述每个振动梁还包括：
    配重块，与所述移动端连接，其中，所述移动端响应于所述振动激励产生形变，所述配重块基于所述形变产生位移。
  11. 如权利要求10所述的振动传感器，其特征在于，所述腔体在所述第一方向上的尺寸、所述每个振动梁在所述腔体上的位置、所述每个振动梁的尺寸以及所述配重块的尺寸满足预设的规则，使得所述每个振动梁的所述固有频率满足预设值。
  12. 如权利要求11所述的振动传感器，其特征在于，所述配重块的尺寸与其对应的振动梁的所述固有频率相匹配，使得所述多个振动梁在其对应的所述固有频率上的所述振动信号的偏差在预设偏差范围内。
  13. 一种麦克风，其特征在于，包括：
    壳体；
    权利要求1-12中任一项所述的振动传感器，安装在所述壳体中，所述基座与所述壳体固定连接；以及
    信号合成电路，同所述多个振动梁连接，运行时采集所述振动信号，并对所述振动信号进行信号合成处理，以生成目标频率窗口内的振动信号，其中，所述多个振动梁对应的多个子目标频率窗口覆盖不同的频率范围，所述多个子目标频率窗口构成所述目标频率窗口。
PCT/CN2022/094006 2022-05-20 2022-05-20 振动传感器以及麦克风 Ceased WO2023221069A1 (zh)

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