WO2023217243A1 - 一种制备半导体垂直剖面结构的光刻方法 - Google Patents

一种制备半导体垂直剖面结构的光刻方法 Download PDF

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Publication number
WO2023217243A1
WO2023217243A1 PCT/CN2023/093642 CN2023093642W WO2023217243A1 WO 2023217243 A1 WO2023217243 A1 WO 2023217243A1 CN 2023093642 W CN2023093642 W CN 2023093642W WO 2023217243 A1 WO2023217243 A1 WO 2023217243A1
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photoresist
area
hollow
vertical cross
photolithography method
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English (en)
French (fr)
Inventor
吴挺竹
陈金兰
赖寿强
刘时彪
卢霆威
陈国龙
林宗明
朱丽虹
吕毅军
陈忠
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Xiamen University
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Xiamen University
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of photolithography, and specifically relates to a photolithography method for preparing a semiconductor vertical cross-section structure.
  • Photolithography technology occupies an extremely important position in semiconductor and related industries. As the electronics industry has increasingly higher requirements for precision dimensions, photolithography technology also needs to continue to advance in its application to meet industry needs. Photolithography technology also There are problems of high cost, process reliability, technical stability and low yield.
  • Photoresist contains a photoacid generator, which decomposes to produce acid during exposure. During the baking process, these acids act as catalysts to cause the acid-labile groups hanging on the polymer to fall off, producing new acids. When enough groups fall off, the photoresist can be dissolved in the developer. During actual production exposure, the acid concentration generated in the part of the photoresist close to the light is higher than that in the part far away from the light, resulting in inconsistent dissolution rates of the photoresist during development, resulting in an inverted trapezoidal morphology. This directly affects the accuracy of the photolithography process.
  • the inverted trapezoidal morphology formed by the photolithography process will affect its accuracy, especially at micron-level precision. Therefore, it is necessary to propose a photolithography method for forming semiconductor vertical cross-section structures.
  • the photoresist currently used to achieve vertical profiles is costly and cannot effectively meet the needs of high-precision photolithography.
  • the present invention provides a photolithography method and application for preparing a semiconductor vertical cross-section structure. Segmentation components for photolithography.
  • the present application provides a photolithography method for preparing a semiconductor vertical cross-sectional structure.
  • a photolithography method for preparing a semiconductor vertical cross-section structure An acid-alkali-resistant and opaque separation member is produced according to the photolithography pattern.
  • the separation member includes a cover plate, the cover plate has a shielding area and a hollow area, and the periphery of the hollow area has a vertical Extend downward to form a spacer; the photolithography method includes the following steps:
  • step 2) Place the structure of step 2) in the exposure machine and perform exposure;
  • the photoresist is a positive photoresist, which is coated on the surface of the semiconductor substrate using a spin coating process; the height of the spacer is greater than the layer thickness of the photoresist.
  • step 2) a mechanical suction plate is used to place the separation member on the surface of the photoresist, and a mechanical pressing plate is used to press the separation member for 2 to 10 seconds.
  • step 2) soft baking is performed at 80-110°C for 80-150s, followed by cold baking at 20-30°C for 3-8 minutes.
  • the power density of the exposure is 200-1000J/cm 2 and the exposure time is 40-100s.
  • the thickness of the separator ranges from 1 to 100 ⁇ m, and the minimum size of the cross-section of the hollow area is 1 ⁇ m.
  • the cover plate has a plurality of hollow areas, and the minimum distance between adjacent hollow areas is at least 1 ⁇ m.
  • the material of the partition member is selected from alloy or polymer materials, such as platinum alloy, titanium alloy, polyimide PI, polyphenylene sulfide PPS, polyether ether ketone PEEK.
  • alloy or polymer materials such as platinum alloy, titanium alloy, polyimide PI, polyphenylene sulfide PPS, polyether ether ketone PEEK.
  • others have acid and alkali resistance, high temperature resistance and UV resistance. Materials with barrier properties may also be suitable.
  • the present application provides a partition member for semiconductor vertical lithography, including a cover plate; the cover plate includes a plurality of shielding areas and a plurality of hollow areas spaced apart along a first plane;
  • the periphery of the hollow area extends vertically downward to form a partition; the partition physically separates the shielding area and the hollow located vertically below the first plane.
  • the corresponding area of the district In a direction perpendicular to the first plane, the periphery of the hollow area extends vertically downward to form a partition; the partition physically separates the shielding area and the hollow located vertically below the first plane. The corresponding area of the district.
  • the thickness of the separator ranges from 1 to 100 ⁇ m, and the minimum size of the cross-section of the hollow area is 1 ⁇ m.
  • the minimum distance between adjacent hollow areas is at least 1 ⁇ m.
  • the dividing member is made of acid-alkali-resistant and opaque material.
  • the material of the partition member is selected from at least one of platinum alloy, titanium alloy, polyimide, polyphenylene sulfide, and polyether ether ketone.
  • the shielding area corresponds to the photoresist in the area that does not need to be exposed
  • the hollow area corresponds to the photoresist in the area that needs to be exposed.
  • the spacer is vertically embedded in the photoresist, and the height of the spacer is greater than the layer thickness of the photoresist.
  • Figure 1 is a schematic three-dimensional structural diagram of the partition member of the embodiment
  • Figure 2 is a schematic three-dimensional structural diagram of the partition member of the embodiment from another angle;
  • Figure 3 is a schematic structural diagram obtained in step 1 of the embodiment.
  • Figure 4 is a flow chart of step 2 of the embodiment, in which the arrow indicates the action direction of the robotic arm mechanism;
  • Figure 5 is a schematic diagram of step 4 of the embodiment, in which the arrow indicates the direction of illumination;
  • Figure 6 is a schematic structural diagram obtained in step 5 of the embodiment.
  • Figure 7 is a flow chart of step 6 of the embodiment, in which the arrow indicates the action direction of the robotic arm mechanism
  • Figure 8 is a schematic structural diagram obtained in step 7 of the embodiment.
  • Figure 9 is a schematic structural diagram obtained in step 8 of the embodiment.
  • the material of the partition member 3 needs to meet the requirements of high temperature resistance, acid and alkali resistance and ultraviolet blocking.
  • it can be platinum alloy, titanium alloy, polyimide PI, polyphenylene sulfide PPS, polyether ether ketone PEEK.
  • the partition member 3 includes a cover plate 31.
  • the cover plate 31 is preferably a flat plate structure and has a shielding area 31a and a hollow area 31b.
  • the peripheral side wall of the hollow area 31b extends vertically downward to form a partition 32.
  • the shielding area 31a is a horizontal non-exposed area
  • the hollow area 31b is a horizontal exposure area.
  • the partition plate 32 extends vertically downward from the peripheral side walls of the hollow areas 31b to form a cylindrical structure connected to the cover plate 31.
  • Step 1 Referring to Figure 3, apply photoresist 2 on the surface of the semiconductor substrate 1 in a layered manner.
  • the semiconductor substrate is exemplified by a semiconductor epitaxial wafer. In addition, it may also be a structure with a metal layer, a passivation layer, etc. that has completed part of the device manufacturing process.
  • the semiconductor substrate 1 is immersed in the 511 solution.
  • the 511 solution It has strong oxidizing properties and can effectively remove organic matter adhering to the surface of the epitaxial wafer. In order to remove contaminants on the semiconductor substrate, ensure that the photoresist is properly coated and adhered.
  • the layer thickness of the photoresist 2 is at the micro-nano level and can range from hundreds of nanometers to several micrometers.
  • Step 2 Refer to Figure 4 and combine Figure 1 and Figure 2 to place the partition member 3.
  • the mechanical arm mechanism 4 is used to adsorb the separation member 3 and place it on the surface of the photoresist 2.
  • the cover plate 31 of the separation member 3 can be grasped by vacuum suction and release, and the partition 32 is directed toward the photoresist. downward toward the photoresist surface. Then press the dividing member 3s downward slightly to embed the partition 32 into the photoresist.
  • the partition 32 is physically isolated so that the parts of the photoresist 2 corresponding to the shielding area 31a and the hollow area 31b are independent of each other.
  • the bottoms of the partitions need to be in contact. to the semiconductor substrate to ensure that the acid concentration does not affect the cross-sectional structure.
  • the height of the spacer 32 is greater than the thickness of the photoresist 2, for example, the height of the spacer 32 is 2-5 microns.
  • the minimum cross-sectional size of the hollow area 31b may be up to 1 micron, and the minimum distance between adjacent hollow areas 31b may be 1 micron. If the spacing is too small, it will become more difficult to manufacture and process the dividing components.
  • the photolithography substrate structure is composed of a semiconductor substrate, photoresist and separation components.
  • the above photolithography substrate is placed in the exposure machine, using the mask plate 31 as the photomask plate, and exposes
  • the machine power density is 200-1000J/cm 2 and the exposure time is 40-100s, preferably 60s. Power selection is related to the type of exposure machine. If the power is too small, good graphics will not be produced. If the power is too high, the edges of the graphics will appear jagged and wrinkles will easily appear on the surface of the film.
  • the photoresist in the hollow area 31b is exposed to light, causing the photoacid generator to be excited by light to generate acid; the photoresist in the shielding area 31a is blocked by the mask 31 and is not exposed to light. , so no chemical reaction occurs. Therefore, the photoresist in the exposed area and the non-exposed area is vertically isolated by the partition 32, and the physical isolation can prevent the acid in the hollow area 31b from diffusing to the shielding area 31a. In addition, long-term irradiation with strong light in the exposed area causes enough acid-labile groups hanging on the polymer to fall off in this area.
  • the positive film developer is RZX-3038.
  • the specific exposure steps can be:
  • cleaning fluid to rinse the photolithography substrate structure for 2-3 seconds. After rinsing, infiltrate the surface of the photolithography substrate structure; the cleaning fluid includes deionized water, acetone and other cleaning fluids.
  • the photoresist corresponding to the hollow area 11b is removed.
  • Step 6 Remove the dividing components
  • the mechanical arm mechanism 4 is used to adsorb the separation member 3 and remove it from the photoresist 2 , leaving an etching window 2 a in the photoresist.
  • the semiconductor substrate 1 is etched using processes such as dry etching to achieve the purpose of transferring the pattern. After the etching is completed, as shown in Figure 8, the semiconductor substrate 1 is formed Groove 1a corresponding to etching window 2a.
  • Step 8 Photoresist Stripping
  • the photolithography structure obtained by the photolithography method of the present invention can achieve a 90° vertical section. Compared with the existing photoresist that can achieve a nearly vertical profile, it is suitable for conventional photoresists and saves the cost of using photoresists. Compared with the traditional photolithography method, it saves the steps of manufacturing the photomask, and the special structural separation components can be cleaned and used repeatedly to reduce pattern defects. By changing the design of the separation structure, the pattern can be completely transferred to match the photolithography pattern that needs to be realized, thus avoiding problems such as fuzzy patterns and inadequate detail processing that may affect subsequent processes.
  • the invention discloses a photolithography method for preparing a semiconductor vertical cross-section structure.
  • a separation member is designed according to a photolithography pattern.
  • the separation member includes a cover plate.
  • the cover plate has a shielding area and a hollow area. The periphery of the hollow area extends vertically downward to form a partition. board; after coating the surface of the semiconductor substrate with photoresist, place the separation member, and embed the partition into the photoresist to physically separate the parts corresponding to the shielding area and the corresponding hollow area of the photoresist, and then perform exposure, development and subsequent etching process.
  • a ninety-degree vertical section can be achieved, realizing a low-cost, high-precision photolithography process and having industrial practicality.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Element Separation (AREA)

Abstract

一种制备半导体垂直剖面结构的光刻方法，根据光刻图形设计分隔构件（3），分隔构件（3）包括罩板（31），罩板（31）具有遮蔽区（31a）和镂空区（31b），镂空区（31b）周缘垂直向下延伸形成隔板（32）；在半导体基片（1）表面涂覆光刻胶（2）后放置分隔构件（3），并使隔板（32）嵌入光刻胶（2）中将光刻胶（2）对应遮蔽区（31a）和对应镂空区（31b）的部分物理隔开，然后进行曝光、显影以及后续的蚀刻工艺。通过分隔构件（3）物理隔离需曝光部分的光刻胶（2），可实现九十度的垂直剖面，实现了低成本，高精度的光刻工艺。

Description

一种制备半导体垂直剖面结构的光刻方法
本申请要求申请日2022年5月12日向中国国家知识产权局，申请号为：202210513754.1，发明创造名称是：“一种制备半导体垂直剖面结构的光刻方法”的中国专利申请为基础，并主张其优先权，该中国专利申请的公开内容在此作为整体引入本申请文本中。
技术领域
本发明属于光刻技术领域，具体涉及一种制备半导体垂直剖面结构的光刻方法。
背景技术
光刻技术在半导体及相关产业中占极其重要的地位，随着电子产业对精度尺寸的要求越来越高，光刻技术在应用中也需要不断进步以满足产业需求，而光刻技术同时还存在成本高，工艺可靠性、技术稳定性及良率低的问题。
光刻胶中含有光致酸产生剂，在曝光过程中光致酸产生剂会分解产生酸。在烘烤过程中这些酸作为催化剂使得聚合物上悬挂的酸不稳定基团脱落，产生新的酸，当足够多的基团脱落后，光刻胶就能溶于显影液。在实际生产中曝光时，由于光刻胶接近光照的部分产生的酸浓度，比远离光照的部分中产生的酸浓度高，导致显影时光刻胶的溶解速度不一致，进而出现倒梯形的形貌。这直接影响了光刻工艺的精度。
在一些需要垂直剖面半导体结构的制备中，光刻过程形成的倒梯形的形貌会影响其精度，特别是在微米级别的精度下，所以提出形成半导体垂直剖面结构的光刻方法是必要的。目前用于实现垂直剖面的光刻胶成本较高，并且在效果上也无法满足高精度光刻的需求。
发明内容
本发明针对现有技术存在的不足，提供一种制备半导体垂直剖面结构的光刻方法和用 于光刻的分割构件。
第一方面，本申请提供一种制备半导体垂直剖面结构的光刻方法。
一种制备半导体垂直剖面结构的光刻方法，根据光刻图形制作耐酸碱且不透明的分隔构件，所述分隔构件包括罩板，所述罩板具有遮蔽区和镂空区，镂空区周缘具有垂直向下延伸形成隔板；所述光刻方法包括以下步骤：
1)于半导体基片表面涂覆光刻胶；
2)将分隔构件放置于光刻胶表面，向下按压至隔板嵌入光刻胶中，使光刻胶对应遮蔽区和对应镂空区的部分互相独立，然后对光刻胶进行软烘；
3)将步骤2)的结构置于曝光机中，进行曝光；
4)进行显影工艺，去除镂空区对应的光刻胶得到蚀刻窗口；
5)移除分隔构件；
6)对蚀刻窗口内的半导体基片进行蚀刻，蚀刻完成后，剥离光刻胶。
可选的，所述光刻胶是正性光刻胶，采用旋涂工艺涂覆于所述半导体基片表面；所述隔板的高度大于所述光刻胶的层厚度。
可选的，所述步骤2)中，采用机械吸板将所述分隔构件放置于所述光刻胶的表面，采用机械压板按压所述分隔构件2～10s。
可选的，所述步骤2)中，软烘是在80-110℃下烘烤80-150s，随后在20-30℃下冷烤3-8min。
可选的，所述步骤3)中，所述曝光的功率密度为200-1000J/cm2，曝光时间40-100s。
可选的，所述隔板的厚度范围为1-100μm，所述镂空区横截面的最小尺寸为1μm。
可选的，所述罩板具有多个镂空区，相邻镂空区的最小间隔至少1μm。
可选的，所述分隔构件的材料选自合金或聚合物材料，例如铂合金、钛合金、聚酰亚胺PI，聚苯硫醚PPS，聚醚醚酮PEEK。此外，其他具有耐酸碱、耐高温和紫外 阻挡特性的材料也可适用。
第二方面，本申请提供一种用于半导体垂直光刻的分隔构件，包括罩板；所述罩板包括沿第一平面上间隔排布的多个遮蔽区和多个镂空区；
沿垂直于所述第一平面的方向上，所述镂空区的周缘垂直向下延伸形成隔板；所述隔板物理隔离垂直位于所述第一平面的下方的所述遮蔽区和所述镂空区的对应区域。
可选地，所述隔板的厚度范围为1-100μm，所述镂空区横截面的最小尺寸为1μm。
可选地，相邻所述镂空区的最小间隔至少1μm。
可选地，所述分割构件采用耐酸碱、且不透光的材料制备。
可选地，所述分隔构件的材料选自铂合金、钛合金、聚酰亚胺，聚苯硫醚，聚醚醚酮中的至少一种。
可选地，光刻时，所述遮蔽区对应不需曝光区域的光刻胶，所述镂空区对应需曝光区域的光刻胶。
进一步可选地，光刻时，所述隔板垂直嵌入所述光刻胶，所述隔板的高度大于所述光刻胶的层厚度。本申请的有益效果为：
1)利用结构分隔构件垂直隔绝曝光区域与非曝光区域的光刻胶，采用物理隔离可防止光致酸产生剂产生酸的扩散，可避免出现倾斜侧壁，从而构建垂直的剖面，对光刻胶材质要求低，适用于常规光刻胶，节省了光刻胶的使用成本。
2)对比于传统光刻方法，节省了制造光罩版步骤，通过改变分隔构件的设计可配合需要实现的光刻图形，将图案完全转移，避免图案模糊和细节处理不到位，影响后续工艺的问题出现。
附图说明
图1为实施例的分隔构件的立体结构示意图；
图2为实施例的分隔构件的另一角度的立体结构示意图；
图3为实施例的步骤1得到的结构示意图；
图4为实施例的步骤2的流程图，其中箭头表示机械臂机构的作用方向；
图5为实施例的步骤4的原理图，其中箭头表示光照方向；
图6为实施例的步骤5得到的结构示意图；
图7为实施例的步骤6的流程图，其中箭头表示机械臂机构的作用方向；
图8为实施例的步骤7得到的结构示意图；
图9为实施例的步骤8得到的结构示意图。
具体实施方式
以下结合附图和具体实施例对本发明做进一步解释。
本发明的权利要求书、说明书及上述附图中，除非另有明确限定，对于方位词，如使用术语“垂直”、“上”、“下”等指示方位或位置关系乃基于附图所示，并以读者为视角描述的方位和位置关系，为便于理解本发明技术方案和便于叙述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位或以特定的方位构造和操作，所以也不能理解为限制本发明的具体保护范围。
参考图1至图2，先根据光刻图形设计出相应特殊的结构分隔构件3。分隔构件3的材料需符合耐高温、耐酸碱性及紫外线阻挡的要求，例如可以是铂合金、钛合金、聚酰亚胺PI，聚苯硫醚PPS，聚醚醚酮PEEK。分隔构件3包括罩板31，罩板31优选为平板结构，具有遮蔽区31a和镂空区31b，镂空区31b周缘侧壁垂直向下延伸形成隔板32。其中，遮蔽区31a为水平非曝光区，镂空区31b为水平曝光区。本实施例中，具有若干分立的镂空区31b，隔板32由镂空区31b周缘侧壁垂直向下延伸形成与罩板31相连的筒状结构。分隔构件3制备完成后清洗10min，再甩干5min。清洗时间可根据实际生产清洗机操作时间选取，甩干时间取决于确保分隔构件完全干燥无水汽。
以下通过示例的方式说明采用上述分隔构件3的制备半导体垂直剖面结构的光刻方法。
步骤1：参考图3，在半导体基片1表面层状涂覆光刻胶2。
本实施例半导体基片以半导体外延片举例，此外，也可以是具有金属层、钝化层等已完成部分器件制程的结构。将半导体基片1浸入511溶液，所述511溶液为硫酸(H2SO4):过氧化氢(H2O2):水(H2O)＝5:1:1的酸性溶液，511溶液具有强氧化性可有效去除黏附外延片表面的有机物。为了去除半导体基片上的污染物，确保光刻胶正常涂覆和黏合。于60℃下清洗10min，再甩干5min，随后在半导体基片1表面旋涂RZJ-304正性光刻胶。光刻胶2的层厚度在微纳米级别，可为几百纳米至几微米的范围。
步骤2：参考图4并结合图1和图2，放置分隔构件3。
光刻胶旋涂完毕后，采用机械臂机构4吸附分隔构件3放置至光刻胶2表面，具体，可以采用真空吸放的方式抓取分隔构件3的罩板31、并使隔板32向下朝向光刻胶表面。然后向下轻微按压分割构件3s，使隔板32嵌入光刻胶中，通过隔板32物理隔离、使光刻胶2对应遮蔽区31a和对应镂空区31b的部分互相独立，隔板底部需接触至半导体基片，才能确保酸浓度不会影响剖面结构。隔板32的高度大于光刻胶2的厚度，例如隔板的高度为2-5微米。镂空区31b的横截面最小尺寸可以是至1微米，相邻镂空区31b的最小间隔可以是1微米。间隔过小会导致分隔构件制作加工难度增大。
步骤3：软烘
将光刻胶在100℃下烘烤120s，去除水汽，该步骤可提光刻胶层与基片的粘附性，降低隔板与光刻胶层粘附性。再进行23℃下冷烤5min。冷烤目的为确保光刻基片温度降至常温，以便后续工艺步骤不被影响。
步骤4：曝光
参考图5并结合图1和图2，由半导体基片、光刻胶和分隔构件组成光刻基片结构，将上述光刻基片放置曝光机内，以罩板31作为光罩版，曝光机功率密度为200-1000J/cm2，曝光时间40-100s，优选地为60s。功率选取与曝光机类型有关。功率过小无法产生良好的图形，功率过大会导致图形边缘出现锯齿，胶膜表面容易出现皱纹。
在曝光过程中，将镂空区31b内的光刻胶暴露在光照下，导致光致酸产生剂受光激发产生酸；遮蔽区31a范围内的光刻胶在罩板31的阻挡之下不受光照、故不发生化学反应。因此，用隔板32垂直隔绝曝光区域与非曝光区域的光刻胶，物理隔离可防止镂空区31b区域中的酸扩散至遮蔽区31a。此外，在曝光区域中通过强光长时间照射，使这个区域内有足够多的聚合物上悬挂的酸不稳定基团脱落。
步骤5：显影
参考图6，将曝光后的上述光刻基片结构放置显影机中，正胶显影液采用RZX-3038，具体曝光步骤可以为：
1、采用清洗液对光刻基片结构进行冲洗2-3s，冲洗后对光刻基片结构表面浸润；清洗液包括去离子水、丙酮等清洗液。
2、对1处理后的光刻基片结构喷涂显影液，然后显影30s；
3、采用清洗液对2处理后的光刻基片结构进行冲洗20-30s；
4、将经步骤三处理后的光刻基片结构甩干1min；
去除了镂空区11b对应的光刻胶。
步骤6：移除分隔构件
参考图7，采用机械臂机构4吸附分隔构件3，将其从光刻胶2中移除，光刻胶中留下蚀刻窗口2a。
步骤7：蚀刻
以具有蚀刻窗口2a的光刻胶层作为掩膜，采用例如干法蚀刻等工艺对半导体基片1进行蚀刻，达到转移图形的目的，蚀刻完成后如图8所示，半导体基片1上形成与蚀刻窗口2a对应的凹槽1a。
步骤8：光刻胶剥离
将刻蚀后的半导体基片1浸入ASTP136去胶液中，在60℃下去胶15min，再甩干5min。将去胶后的基片浸入511溶液中，60℃下清洗10min，去除多余的残留显影 液及杂质等；再甩干5min。即实现垂直剖面的光刻工艺，如图9所示。
本发明的光刻方法得到的光刻结构，可以实现90°的垂直剖面。对比现有的可实现接近垂直剖面的光刻胶而言，适用于常规的光刻胶，节省了光刻胶的使用成本。对比于传统光刻方法，节省了制造光罩版步骤，特殊结构分隔构件可重复清洗使用，减少图形缺陷。通过改变分隔结构的设计可配合需要实现的光刻图形，将图案完全转移，避免图案模糊，细节处理不到位，影响后续工艺的问题出现。
上述实施例仅用来进一步说明的核心构思，但本发明并不局限于实施例，凡是依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均落入本发明技术方案的保护范围内。
工业实用性
本发明公开了一种制备半导体垂直剖面结构的光刻方法，根据光刻图形设计分隔构件，所述分隔构件包括罩板，罩板具有遮蔽区和镂空区，镂空区周缘垂直向下延伸形成隔板；在半导体基片表面涂覆光刻胶后放置分隔构件，并使隔板嵌入光刻胶中将光刻胶对应遮蔽区和对应镂空区的部分物理隔开，然后进行曝光、显影以及后续的蚀刻工艺。通过分隔构件物理隔离需曝光部分的光刻胶，可实现九十度的垂直剖面，实现了低成本，高精度的光刻工艺,具有工业实用性。

Claims (15)

  1. 一种制备半导体垂直剖面结构的光刻方法，其特征在于，根据光刻图形制作耐酸碱且不透明的分隔构件，所述分隔构件包括罩板，所述罩板具有遮蔽区和镂空区，镂空区周缘具有垂直向下延伸形成的隔板；所述光刻方法包括以下步骤：
    1)于半导体基片表面涂覆光刻胶；
    2)将分隔构件放置于光刻胶表面，向下按压至隔板嵌入光刻胶中，使光刻胶对应遮蔽区和对应镂空区的各部分互相独立，然后对光刻胶进行软烘；
    3)将步骤2)得到的结构置于曝光机中，进行曝光；
    4)进行显影工艺，去除镂空区对应的光刻胶得到蚀刻窗口；
    5)移除分隔构件；
    6)对蚀刻窗口内的半导体基片进行蚀刻，蚀刻完成后，剥离光刻胶。
  2. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于：所述光刻胶是正性光刻胶，采用旋涂工艺涂覆于所述半导体基片的表面；所述隔板的高度大于所述光刻胶的层厚度。
  3. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于：所述步骤2)中，采用机械吸板将所述分隔构件放置于所述光刻胶的表面；采用机械压板按压所述分隔构件2-10s。
  4. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于：所述步骤2)中，软烘是先在80-110℃下烘烤80-150s，随后在20-30℃下冷烤3-8min。
  5. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于：所述步骤3)中，所述曝光的功率密度为200-1000J/cm2，曝光时间40-100s。
  6. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于：所述隔板的厚度范围为1-100μm，所述镂空区的最小尺寸为1μm。
  7. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于： 所述罩板具有多个所述镂空区，相邻所述镂空区的最小间隔至少1μm。
  8. 根据权利要求1所述的制备半导体垂直剖面结构的光刻方法，其特征在于：所述分隔构件的材料可选自铂合金、钛合金、聚酰亚胺，聚苯硫醚，聚醚醚酮。
  9. 一种用于半导体垂直光刻的分隔构件，其特征在于：包括罩板；所述罩板包括沿第一平面上间隔排布的多个遮蔽区和多个镂空区；
    沿垂直于所述第一平面的方向上，所述镂空区的周缘垂直向下延伸形成隔板；所述隔板物理隔离垂直位于所述第一平面的下方的所述遮蔽区和所述镂空区的对应区域。
  10. 根据权利要求9所述的分割构件，其特征在于：所述隔板的厚度范围为1-100μm，所述镂空区的横截面宽度的最小尺寸为1μm。
  11. 根据权利要求9所述的分割构件，其特征在于：相邻所述镂空区的最小间隔至少1μm。
  12. 根据权利要求9所述的分割构件，其特征在于：所述分割构件采用耐酸碱、且不透光的材料制备。
  13. 根据权利要求12所述的分割构件，其特征在于：所述分隔构件的材料选自铂合金、钛合金、聚酰亚胺，聚苯硫醚，聚醚醚酮中的至少一种。
  14. 根据权利要求9所述的分割构件，其特征在于：在光刻状态：所述遮蔽区对应不需曝光区域的光刻胶，所述镂空区对应需曝光区域的光刻胶。
  15. 根据权利要求9所述的分割构件，其特征在于：在光刻状态：所述隔板垂直嵌入所述光刻胶，所述隔板的高度大于所述光刻胶的层厚度。
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