WO2023216548A1 - 一种功率半导体器件的驱动保护电路及控制方法 - Google Patents

一种功率半导体器件的驱动保护电路及控制方法 Download PDF

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Publication number
WO2023216548A1
WO2023216548A1 PCT/CN2022/133463 CN2022133463W WO2023216548A1 WO 2023216548 A1 WO2023216548 A1 WO 2023216548A1 CN 2022133463 W CN2022133463 W CN 2022133463W WO 2023216548 A1 WO2023216548 A1 WO 2023216548A1
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power semiconductor
semiconductor device
protection unit
branch
power
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English (en)
French (fr)
Inventor
曾嵘
余占清
陈政宇
尚杰
赵彪
吴锦鹏
刘佳鹏
屈鲁
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Tsinghua University
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Tsinghua University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Definitions

  • the invention belongs to the technical field of electronic circuits, and in particular relates to a drive protection circuit and a control method for a power semiconductor device.
  • the gate drive circuit (hereinafter referred to as the "drive") of the existing thyristor-type power semiconductor device (thyristor, integrated gate commutated thyristor IGCT, etc., hereinafter referred to as the “device”) under normal power supply conditions, can be turned off when turned off.
  • the device provides a gate potential lower than the cathode potential, ensuring reliable shutdown of the device.
  • the driver cannot provide a reliable gate potential lower than the cathode potential during the period, so the device's ability to withstand voltage and voltage change rate will not reach the rated level. value. Therefore, devices without drive protection circuits require external high-voltage isolation power supply for the drive, causing the drive to be powered on earlier than the main circuit, severely limiting the application scenarios.
  • the turn-on and turn-off modules can ensure that the potential difference between the gate and cathode of the power semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device.
  • the anode of the power semiconductor device has a large The power semiconductor device will not be turned on accidentally when the instantaneous voltage is high.
  • the gate and cathode of the turn-on and turn-off module and the power semiconductor device are disconnected, and a reliable gate potential lower than the cathode potential cannot be provided during the period, so that the device can The ability to withstand voltage and voltage change rate will not reach the rated value.
  • the power semiconductor device is easily turned on by mistake.
  • Patent CN108718193A provides a feasible drive protection circuit for power semiconductor devices, but the implementation method of the "start-stop module" described in it is too simple. Although the voltage change rate of the device during the power-on and power-off processes is certain, Benefits, but also has the following shortcomings: (1) The start-stop module only contains a single switching element. The control module needs to provide a trigger signal to turn on or maintain conduction before the voltage reaches the threshold. At the same time, it needs to be turned off after the voltage reaches the threshold.
  • the element Difficulty in selection taking into account both action speed and default state;
  • the start-stop module can only provide protection for the device during power-on and/or power-off, but does not provide corresponding protection capabilities during complete power loss of the drive;
  • the combination of the start-stop module and the anode structure of the device itself may cause the device to lose its reverse blocking capability, resulting in reverse flow under certain application conditions, increasing the risk of device failure.
  • the present invention proposes a drive protection circuit and control method for a power semiconductor device.
  • a drive protection circuit for a power semiconductor device including a turn-on and turn-off module, a static protection unit and a dynamic protection unit;
  • the turn-on and turn-off module, static protection unit and dynamic protection unit are connected in parallel with each other, are all connected to power semiconductor devices, and are arranged between the gate and cathode of the power semiconductor;
  • the dynamic protection unit is also connected to the anode of the power semiconductor device.
  • the static protection unit is a parallel circuit of multiple switching elements, a series-parallel circuit of multiple switching elements, or a series-parallel circuit of multiple switching elements and one-way flow elements
  • the dynamic protection unit is a switching element and a voltage mutual inductance device.
  • the parallel circuit of multiple switching elements includes a first branch and a second branch arranged in parallel, the first branch is provided with a first switching element S1, and the second branch is provided with a second switch.
  • the first branch and the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.
  • the series-parallel circuit of the plurality of switch circuits includes a first branch and a second branch connected in parallel, the first branch is provided with a first switching element S1, and both ends of the first branch are connected to the power semiconductor respectively.
  • the gate and cathode of the device are connected, the second branch includes a second switching element S2 and a third switching element S3 connected in series, and both ends of the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.
  • the series-parallel circuit of multiple switching elements and one-way flow elements includes a parallel first branch and a second branch
  • the first branch includes a series-connected first switching element S1 and a one-way flow element D1
  • the second branch includes a second switching element S2 and a third switching element S3 connected in series.
  • One end of the first branch and the second branch is connected to the gate of the power semiconductor component, and the other end is connected to the power Cathode connection of semiconductor components.
  • the series circuit of the switching element and the voltage mutual inductance device includes a fourth switching element S4 and a voltage mutual inductance device VT.
  • the voltage mutual inductance device VT includes a secondary side and a primary side, and one end of the fourth switching element S4 is connected in series with the secondary side. , the other end is connected to the gate of the power semiconductor device, one end of the secondary side is connected to the cathode of the power semiconductor device, and the two ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively.
  • the switching element, voltage mutual inductance device, energy storage capacitor, and one-way flow element are connected in series and parallel circuit, including the fourth switching element S4, the voltage mutual inductance device VT, the third one-way flow element D3, and the overvoltage protection element T2 , energy storage capacitor C1 and the first series branch, the voltage mutual inductance device VT includes a secondary side and a primary side, the two ends of the primary side are respectively connected to the anode and cathode of the power semiconductor device, the first series branch It includes a series-connected secondary side and a second one-way flow element D2.
  • One end of the fourth switching element S4 is connected in series with a parallel first series branch, an overvoltage protection element T2, a third one-way flow element D3 and an energy storage device.
  • capacitor C1 and the other end of the fourth switching element S4 is connected to the gate of the power semiconductor device, and one end of the first series branch is connected to the cathode of the power semiconductor device.
  • the power semiconductor device includes a thyristor, a gate turn-off thyristor, an integrated gate commutation thyristor, an emitter turn-off thyristor, and an insulated gate bipolar transistor.
  • the drive protection circuit includes one or a combination of a static protection unit and a dynamic protection unit.
  • a control method for a drive protection circuit of a power semiconductor device When the power is completely lost, the static protection unit and the dynamic protection unit operate, and the opening and closing modules do not operate;
  • the static protection unit and the dynamic protection unit run first.
  • the switch and shutdown module are put into operation, and the static protection unit and the dynamic protection unit stop running;
  • the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and the static protection unit stops running at the same time;
  • the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and finally the static protection unit stops running;
  • the turn-on and turn-off module ensures that the potential difference between the gate and cathode of the power semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device;
  • the static protection unit and the dynamic protection unit operate, and the on/off module stops running at the same time;
  • the static protection unit is put into operation first, while the opening and closing modules stop running, and finally the dynamic protection unit is put into operation;
  • the static protection unit is put into operation first, then the turning on and off modules stop running, and finally the dynamic protection unit is put into operation.
  • the static protection unit is used to ensure that the potential difference between the gate and cathode of the power semiconductor device is less than the conduction between the gate and cathode of the power semiconductor device when the power is completely lost, during the power-on process and during the power-off process.
  • the dynamic protection unit is used to ensure that the gate potential of the power semiconductor device is lower than the cathode potential when a large instantaneous voltage occurs at the anode of the power semiconductor device.
  • the drive protection circuit of the present invention realizes that the gate potential of the power semiconductor device is lower than the cathode, or the potential difference between the gate and cathode is lower than the power when the power semiconductor device is completely powered off, during the power-on process, and during the power-off process.
  • the conduction voltage of the semiconductor gate cathode ensures reliable shutdown of the power semiconductor device and protects the power semiconductor device;
  • the static protection unit of the present invention has the advantages of convenient component selection, simple control, and rapid coordination of various parts of the circuit. It can ensure that the gate and cathode of the power semiconductor device are not in a suspended state under any circumstances, greatly improving the device shutdown.
  • the reliability of interruption reduces the risk of failure, and greatly reduces the leakage current of the static protection unit when it is not working, which is conducive to the normal opening action of the power semiconductor device, and greatly reduces the leakage current of the static protection unit when it is not working, and has It is conducive to the normal turn-on action of the power semiconductor device, and can prevent the combination of the static protection unit and the anode structure of the device itself from causing the device to lose its reverse blocking ability during complete power loss, and avoid reverse flow under certain special working conditions;
  • the dynamic protection unit of the present invention has the advantages of convenient component selection, simple control, and strong resistance to dv/dt. It can achieve targeted generation of negative gate-cathode voltage when a large dv/dt occurs at the anode, reducing the risk of failure. , which reduces the total impedance requirement for the entire loop, has better protection effect, and has a memory effect. At the same time, it can prevent the combination of the static protection unit and the anode structure of the device itself from causing the device to lose its reverse blocking ability during complete power loss of the drive. Avoid reverse flow under certain special working conditions to reduce the risk of device failure.
  • Figure 1 shows a schematic structural diagram of a drive protection circuit for a power semiconductor device according to the present invention
  • Figure 2 shows a parallel circuit of multiple switching elements of the static protection unit
  • Figure 3 shows a series-parallel circuit of multiple switching elements of the static protection unit
  • Figure 4 shows a series-parallel circuit of multiple switching elements and one-way flow elements of the static protection unit
  • Figure 5 shows the series circuit of the switching element of the dynamic protection unit and the voltage mutual inductance device
  • Figure 6 shows the series-parallel circuit of the switching element, voltage mutual inductance device, energy storage capacitor, and one-way flow element of the dynamic protection unit.
  • a drive protection circuit for a power semiconductor device includes a turn-on and turn-off module, a static protection unit and a dynamic protection unit;
  • the turn-on and turn-off modules, the static protection unit and the dynamic protection unit are connected in parallel with each other, are all connected to power semiconductor devices, and are arranged between the gate and cathode of the power semiconductor;
  • the dynamic protection unit is also connected to the anode of the power semiconductor device.
  • the drive protection circuit can be divided into a static protection unit and a dynamic protection unit. Both the static protection unit and the dynamic protection unit are connected between two or three poles of the gate, cathode and anode of the power semiconductor device.
  • the static protection unit is a parallel circuit of multiple switching elements or a series-parallel circuit of multiple switching elements or a series-parallel circuit of multiple switching elements and one-way flow elements
  • the dynamic protection unit is a series circuit of switching elements and a voltage mutual inductance device or a switch. Components are connected in series and parallel circuits with voltage mutual inductance devices, energy storage capacitors, and unidirectional flow components.
  • the parallel circuit of multiple switching elements includes a first branch and a second branch arranged in parallel.
  • the first branch is provided with a first switching element S1
  • the second branch is provided with a second switch.
  • the component S2, the first branch and the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.
  • the static protection unit is composed of switching element S1 and switching element S2 in parallel.
  • the on-resistance of S1 is extremely low and can be reliably closed during the drive power loss period. There are no special requirements for its switching time; the on-resistance of S2 It is low and can respond quickly when the switch drive signal is applied. There are no special requirements for its normally open and normally closed characteristics.
  • One S1 option is a normally closed mechanical relay, one S2 option is a solid state relay, and the other S2 option is an enhancement mode MOSFET.
  • Control method for a parallel circuit of multiple switching elements S1 remains closed during complete power loss of the drive and during power on and off; S2 changes from open to closed during power on, and S2 changes from closed to open during power off; When it is completed, S1 is disconnected first, and S2 remains closed at this time. After S1 is completely disconnected, S2 is disconnected again. At the same time, other driven circuits (turning on and off modules) are put into work, and the two realize switching without delay; it needs to be When the power is on, other circuits of the driver are cut off, and S2 is quickly closed at the same time. The two realize switching without delay, and then S1 is closed again, maintaining the entire power-off process until the driver is completely powered off.
  • This circuit has the advantages of convenient component selection, simple control, and rapid coordination of various parts of the circuit. It can ensure that the gate and cathode of the power semiconductor device are not in a floating state under any circumstances, greatly improving the reliability of the device shutdown. Reduce the risk of failure.
  • the series-parallel circuit of multiple switch circuits includes a first branch and a second branch connected in parallel.
  • the first branch is provided with a first switching element S1, and both ends of the first branch are connected to The gate and cathode of the power semiconductor device are connected
  • the second branch includes a second switching element S2 and a third switching element S3 connected in series, and both ends of the second branch are electrically connected to the gate and cathode of the power semiconductor device respectively.
  • Figure 3 is based on Figure 2 and adds the switching element S3 in series to the S2 branch.
  • the on-resistance of S3 is extremely low, and the leakage current is extremely small when it is turned off. Its switching time and normally open and normally closed characteristics There are no special requirements.
  • One option for S3 is a normally open mechanical relay.
  • Control method of multiple switch circuits in series and parallel circuits During the power-on and power-off process, when the series branch needs to be closed, S3 closes before S2, and when the series branch needs to be disconnected, S3 and S2 open at the same time; to ensure the continuity of the entire series branch. Characteristics are defined by the extremely responsive S2. The rest of the control logic is the same as the scheme in Figure 2.
  • This circuit has all the advantages of the above solution, and greatly reduces the leakage current of the static protection unit when it is not working, which is beneficial to the normal turn-on action of the power semiconductor device and reduces losses at the same time.
  • the series-parallel circuit of multiple switching elements and one-way flow elements includes a first branch and a second branch connected in parallel.
  • the first branch includes a series-connected first switching element S1 and a one-way flow element.
  • Component D1 the second branch includes a second switching element S2 and a third switching element S3 connected in series.
  • One end of the first branch and the second branch is connected to the gate of the power semiconductor component, and the other end is connected to the power semiconductor component.
  • the cathode connection of the device is a first branch and a second branch connected in parallel.
  • Figure 4 is based on Figure 3.
  • a one-way flow element D1 is inserted in the S1 branch to form a second series branch.
  • the conduction voltage of D1 is as low as possible, and the surge current capability is strong. For other characteristics There are no special requirements.
  • One option for D1 is a Schottky diode.
  • the control method is: S1 remains closed during the complete power loss of the drive and during power on and off; during power on, S3 changes from open to closed before S2, and during power off, S2 and S3 change from closed to open at the same time; When the power supply is completed, S2 and S3 are disconnected, and other driven circuits (turning on and off modules) are put into work at the same time. After that, S1 is disconnected to achieve no-delay switching; when powering off is required, the driving S1 is closed first and waits for stability before other circuits ( Turn on and off the module) cut off the work, and at the same time S2 is quickly closed, the two achieve no-delay switching, and the entire power-off process is maintained until the driver is completely powered off.
  • This circuit has all the advantages of the above solution, and can prevent the device from losing its reverse blocking ability due to the combination of the static protection unit and the anode structure of the device itself during complete power loss, and avoid reverse flow under certain special working conditions. Reduce the risk of device failure.
  • the series circuit of the switching element and the voltage mutual inductance device includes a fourth switching element S4 and a voltage mutual inductance device VT.
  • the voltage mutual inductance device VT includes a secondary side and a primary side, and one end of the fourth switching element S4 is connected in series with the secondary side. , the other end is connected to the gate of the power semiconductor device, one end of the secondary side is connected to the cathode of the power semiconductor device, and the two ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively.
  • the dynamic protection unit is composed of the switching element S4 and the voltage mutual inductance device VT connected in series.
  • the on-resistance of S4 is extremely low, and it can ensure reliable closing during the drive power loss period.
  • One S1 option is a normally closed mechanical relay
  • one VT option is a capacitively coupled voltage transformer device
  • another VT option is a transformer with capacitive isolation.
  • the control method of the series circuit of the switching element and the voltage mutual inductance device S4 remains closed during the complete power loss of the drive and during the power on and off process; when the positive dv/dt appears at the anode of the device, VT generates a negative voltage and is applied between the gate and cathode of the device. Thus, the displacement current caused by the anode dv/dt is drawn out from the gate. After the driver is powered on, S4 is disconnected and VT no longer plays a role.
  • This circuit has the advantages of easy component selection, simple control, and strong dv/dt resistance. It can generate a negative gate-cathode voltage when a large dv/dt occurs at the anode, reducing the risk of failure and reducing the impact on the entire circuit. The total impedance requirement is higher, and the protection effect is better.
  • the series-parallel circuit of the switching element, the voltage mutual inductance device, the energy storage capacitor, and the one-way flow element includes the fourth switching element S4, the voltage mutual inductance device VT, the third one-way flow element D3, and the through-flow element D3.
  • Voltage protection element T2 energy storage capacitor C1 and the first series branch.
  • the voltage mutual inductance device VT includes a secondary side and a primary side. Both ends of the primary side are connected to the anode and cathode of the power semiconductor device respectively.
  • the first series branch includes a series connection The secondary side and the second one-way flow element D2, one end of the fourth switching element S4 are connected in series with the first series branch, the overvoltage protection element T2, the third one-way flow element D3 and the energy storage capacitor C1, which are connected in parallel with each other, and The other end of the fourth switching element S4 is connected to the gate of the power semiconductor device, and one end of the first series branch is connected to the cathode of the power semiconductor device.
  • the scheme in Figure 6 adds a one-way flow element D2 in series to the VT branch to form the first series branch, and then connects the series branch with the one-way flow element D3 and overvoltage protection Component T2 and energy storage capacitor C1 are connected in parallel.
  • the conduction voltage of D2 and D3 is as low as possible, the surge current capability is strong, and there are no special requirements for other characteristics; the protection threshold of T2 is less than or equal to the reverse breakdown voltage of the gate cathode of the power semiconductor component; C1 has no special requirements.
  • D2 and D3 are Schottky diodes
  • T2 is TVS tube
  • C1 is MLCC.
  • the series-parallel circuit control method of switching elements, voltage mutual inductance devices, energy storage capacitors, and unidirectional flow elements based on the above scheme, the reverse current generated by VT can be injected into C1 through D2 and stored. And the voltage of C1 does not exceed the protection threshold of T2, which can have a memory effect on dv/dt resistance and increase the time when the gate potential of the power semiconductor device is lower than the cathode potential.
  • This circuit has the advantages of strong resistance to dv/dt and low risk of gate cathode breakdown of the device. It can generate a negative gate-cathode voltage when a large dv/dt occurs on the anode, reducing the risk of failure, and has a memory effect. At the same time, D2 and D3 can prevent the device from losing its reverse blocking ability due to the combination of the static protection unit and the anode structure of the device itself during complete power loss of the drive, avoid reverse flow under certain special working conditions, and reduce the risk of device failure.
  • power semiconductor devices include, but are not limited to, thyristors, gate turn-off thyristors, integrated gate commutation thyristors, emitter turn-off thyristors, and insulated gate bipolar transistors.
  • the driving protection circuit includes one or a combination of a static protection unit and a dynamic protection unit.
  • the driving protection circuit can be implemented by any one of the above-mentioned static protection unit and dynamic protection unit alone, or can be implemented by a combination of the two. It should be noted that the above-mentioned solutions are all embodiments, and any can be implemented in power semiconductor devices. Circuits that realize that the gate potential of the power semiconductor device is lower than the cathode during the complete power loss of the drive, during the power-on process, and during the power-off process, or the potential difference between the gate and the cathode is less than the turn-on voltage of the power semiconductor gate cathode, are within the protection range. within.
  • static protection unit implementation solution can be composed of multiple switching elements and one-way flow elements connected in series, parallel, or mixed.
  • Switching elements include, but are not limited to, mechanical and semiconductor normally open and normally closed switching elements.
  • the dynamic protection unit implementation solution can be composed of multiple switching elements, one-way flow elements, voltage mutual inductance devices, energy storage capacitors, etc. connected in series, parallel, or mixed.
  • Switching elements include, but are not limited to, mechanical and semiconductor normally open and normally closed switching elements.
  • Voltage mutual inductance devices include but are not limited to transformers, capacitive coupling voltage mutual inductance devices, magnetic field coupling voltage mutual inductance devices, photoelectric coupling voltage mutual inductance devices, etc.
  • a control method for a drive protection circuit of a power semiconductor device When the power is completely lost, the static protection unit and the dynamic protection unit operate, and the opening and closing modules do not operate;
  • the static protection unit and the dynamic protection unit run first.
  • the switch and shutdown module are put into operation, and the static protection unit and the dynamic protection unit stop running;
  • the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and the static protection unit stops running at the same time;
  • the dynamic protection unit first stops running, then the opening and closing modules are put into operation, and then the static protection unit stops running;
  • the turn-on and turn-off module ensures that the potential difference between the gate and cathode of the power semiconductor device is less than the turn-on voltage of the gate and cathode of the power semiconductor device;
  • the static protection unit and the dynamic protection unit operate, while the on/off module stops running;
  • the static protection unit is put into operation first, and the turn-on and turn-off modules stop running at the same time, and then the dynamic protection unit is put into operation;
  • the static protection unit is put into operation first, then the opening and closing modules stop running, and then the dynamic protection unit is put into operation.
  • the static protection unit is used to ensure that the potential difference between the gate and cathode of the power semiconductor device is less than the conduction voltage of the gate and cathode of the power semiconductor device.
  • Dynamic protection units are used to ensure that the gate potential of the power semiconductor device is lower than the cathode potential when a large instantaneous voltage occurs at the anode of the power semiconductor device.
  • the static protection unit forms a path between the gate and cathode of the power semiconductor device, ensuring that when a forward current occurs between the gate and cathode at any time, it provides a flow path for this current, ensuring that The potential difference between the gate and the cathode is less than the turn-on voltage of the power semiconductor gate and cathode; when a large instantaneous voltage occurs at the anode of the device, the dynamic protection unit absorbs the energy of the instantaneous voltage and creates a gap between the cathode and the gate of the power semiconductor element. A short-term forward voltage is generated to ensure that the gate potential of the power semiconductor device is lower than the cathode potential; the turn-on and turn-off modules do not operate.
  • the static protection unit first ensures that the potential difference between the gate and cathode is less than the conduction voltage of the power semiconductor gate and cathode, and the dynamic protection unit ensures that the gate of the power semiconductor device will The electrode potential is lower than the cathode potential; when power is completed, the turn-on and turn-off modules are put into operation.
  • the turn-on and turn-off modules ensure that the potential difference between the gate and cathode is less than the turn-on voltage of the gate and cathode of the power semiconductor, while the static The protection unit and the dynamic protection unit stop running; or when the power-on is completed, the dynamic protection unit first stops running, and then the opening and closing modules are put into operation, and the static protection unit stops running; or when the power-on is completed, the dynamic protection unit first Stop operation, then turn on and turn off the module into operation, then the static protection unit stops running.
  • the turn-on and off modules ensure that the potential difference between the gate and cathode is less than the conduction voltage of the power semiconductor gate and cathode; during the power-off process, the static protection unit ensures that the potential difference between the gate and cathode Less than the turn-on voltage of the gate and cathode of the power semiconductor, the dynamic protection unit ensures that when a large instantaneous voltage occurs on the anode of the device, the gate potential of the power semiconductor device is lower than the cathode potential, and the turn-on and turn-off modules stop running at the same time; or during the power-off process In the power-off process, the static protection unit is put into operation first, and the turn-on and turn-off modules stop running at the same time, and then the dynamic protection unit is put into operation; or during the power-off process, the static protection unit is put into operation first, and then the turn-on and turn-off modules stop running, and then the dynamic protection unit is put into operation. The unit is put into operation.
  • the drive protection circuit of the power semiconductor device only contains a static protection unit, or only a static protection unit, then the description of the dynamic protection unit or the static protection unit can be removed in the above control method.

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Abstract

本发明提供了一种功率半导体器件的驱动保护电路及控制方法，包括开通及关断模块、静态保护单元和动态保护单元，开通及关断模块、静态保护单元和动态保护单元相互并联，均连接有功率半导体器件，且均设置在功率半导体的门极与阴极之间，动态保护单元还与功率半导体器件的阳极连接。本发明的驱动保护电路在功率半导体器件驱动完全失电期间、上电过程中及下电过程中实现功率半导体器件门极电位低于阴极，或实现门极与阴极之间电位差小于功率半导体门阴极导通电压，从而保证功率半导体器件可靠关断，从而保护功率半导体器件。

Description

一种功率半导体器件的驱动保护电路及控制方法 技术领域
本发明属于电子电路技术领域，特别涉及一种功率半导体器件的驱动保护电路及控制方法。
背景技术
现有的晶闸管型功率半导体器件(晶闸管、集成门极换流晶闸管IGCT等，以下简称“器件”)的门极驱动电路(以下简称“驱动”)，在正常供电状态下，关断时可为器件提供低于阴极电位的门极电位，确保器件能够可靠关断。但在驱动完全失电期间，或上电过程和下电过程期间，驱动无法为期间提供可靠的低于阴极电位的门极电位，从而器件能够耐受电压及电压变化率的能力将不能达到额定值。因此，不含驱动保护电路的器件需要外界对驱动进行高压隔离供电，使驱动早于主电路完成上电，严重限制了应用场合。
在驱动电路中，在正常上电时，开通及关断模块可保证功率半导体器件的门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，当功率半导体器件阳极出现较大的瞬时电压时功率半导体器件也不会误开通。在失电期间，或上电过程和下电过程期间，开通及关断模块与功率半导体器件的门极与阴极断开，无法为期间提供可靠的低于阴极电位的门极电位，从而器件能够耐受电压及电压变化率的能力将不能达到额定值。当功率半导体器件阳极出现较大的瞬时电压时功率半导体器件极易出现误开通。
专利CN108718193A给出了一种可行的功率半导体器件的驱动保护电路，但其所述的“启停模块”实现方式过于简单，虽然对上电过程和下电过程中器件承受电压变化率有一定的好处，但也存在以下不足：(1)启停模块仅包含单一开关元件，需要在电压达到阈值前控制模块提供触发信号导通或维持导通，同时需要在电压达到阈值后实现关断，元件选型困难，难以兼顾动作速度与默认状态；(2)启停模块仅可在上电和/或下电过程中为器件提供保护，而未在驱动完全失电期间提供相应保护能力；(3)启停 模块与器件本身阳极结构的结合可能导致器件失去反向阻断能力，导致在某些应用工况下反向通流，增加了器件失效风险。
发明内容
针对上述问题，本发明提出一种功率半导体器件的驱动保护电路及控制方法。
为了实现上述目的，本发明采用以下技术方案：
一种功率半导体器件的驱动保护电路，包括开通及关断模块、静态保护单元和动态保护单元；
所述开通及关断模块、静态保护单元和动态保护单元相互并联，均连接有功率半导体器件，且均设置在功率半导体的门极与阴极之间；
所述动态保护单元还与功率半导体器件的阳极连接。
优选的，所述静态保护单元为多个开关元件并联电路或多个开关元件串并联电路或多个开关元件与单向通流元件串并联电路，所述动态保护单元为开关元件与电压互感装置串联电路或开关元件与电压互感装置、储能电容、单向通流元件串并联电路。
优选的，所述多个开关元件并联电路包括并联设置的第一支路和第二支路，所述第一支路设置有第一开关元件S1，所述第二支路设置有第二开关元件S2，所述第一支路和第二支路均分别与功率半导体器件的门极与阴极电性连接。
优选的，所述多个开关电路串并联电路包括并联的第一支路和第二支路，所述第一支路设置有第一开关元件S1，且第一支路两端分别与功率半导体器件的门极与阴极连接，所述第二支路包括串联的第二开关元件S2与第三开关元件S3，且第二支路两端分别与功率半导体器件的门极与阴极电性连接。
优选的，所述多个开关元件与单向流通元件串并联电路包括并联的第一支路和第二支路，所述第一支路包括串联的第一开关元件S1和单向流通元件D1，所述第二支路包括串联的第二开关元件S2和第三开关元件S3，所述第一支路和第二支路一端均与功率半导体元器件的门极连接，另一端均与功率半导体元器件的阴极连接。
优选的，所述开关元件与电压互感装置串联电路包括第四开关元件S4和电压互感装置VT，所述电压互感装置VT包括副边和原边，所述第四开关元件S4一端与副边串联，另一端与功率半导体器件门极连接，所述副边一端与功率半导体器件阴极连接，所述原边的两端分别与功率半导体器件的阳极和阴极连接。
优选的，所述开关元件与电压互感装置、储能电容、单向通流元件串并联电路，包括第四开关元件S4、电压互感装置VT、第三单向流通元件D3、过压保护元件T2、储能电容C1和第一串联支路，所述电压互感装置VT包括副边和原边，所述原边的两端分别与功率半导体器件的阳极和阴极连接，所述第一串联支路包括串联的副边和第二单向通流元件D2，所述第四开关元件S4一端串联有相互并联的第一串联支路、过压保护元件T2、第三单向流通元件D3和储能电容C1，且所述第四开关元件S4另一端与功率半导体器件门极连接，所述第一串联支路一端与功率半导体器件阴极连接。
优选的，所述功率半导体器件包括晶闸管、门极关断晶闸管、集成门极换流晶闸管、发射极关断晶闸管、绝缘栅双极晶体管。
优选的，所述驱动保护电路包括静态保护单元和动态保护单元中的一种或二者组合。
一种功率半导体器件的驱动保护电路的控制方法，在完全失电时，静态保护单元和动态保护单元运行，开通及关断模块不运行；
在上电过程中，先由静态保护单元和动态保护单元运行，上电完成时开关及关断模块投入运行，静态保护单元和动态保护单元停止运行；
或当上电完成时，动态保护单元先停止运行，之后开通及关断模块投入运行，同时静态保护单元停止运行；
或当完成上电时，动态保护单元先停止运行，之后开通及关断模块投入运行，最后静态保护单元停止运行；
在下电之前，由开通及关断模块保证功率半导体器件门极与阴极间的电位差小于功率半导体器件门极与阴极的导通电压；
在下电过程中，静态保护单元和动态保护单元运行，同时开通关断模 块停止运行；
或在下电过程中，静态保护单元先投入运行，同时开通及关断模块停止运行，最后动态保护单元投入运行；
或在下电过程中，静态保护单元先投入运行，然后开通及关断模块停止运行，最后动态保护单元投入运行。
优选的，在完全失电时、上电过程中和下电过程中，所述静态保护单元均用于保证功率半导体器件的门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，所述动态保护单元均用于保证功率半导体器件阳极出现较大的瞬时电压时功率半导体器件的门极电位低于阴极电位。
本发明的有益效果：
1、本发明的驱动保护电路在功率半导体器件驱动完全失电期间、上电过程中及下电过程中实现功率半导体器件门极电位低于阴极，或实现门极与阴极之间电位差小于功率半导体门阴极导通电压，从而保证功率半导体器件可靠关断，从而保护功率半导体器件；
2、本发明的静态保护单元元件方便选型、控制简单、各部分电路配合迅速的优点，可保证任何情况下功率半导体器件的门阴极之间均不处在悬浮状态，极大提升了器件关断的可靠性，降低失效风险，且大幅降低了静态保护单元在不工作时的泄漏电流，有利于功率半导体器件正常的开通动作，且大幅降低了静态保护单元在不工作时的泄漏电流，有利于功率半导体器件正常的开通动作，且能够防止在驱动完全失电期间静态保护单元与器件本身阳极结构的结合导致器件失去反向阻断能力，在某些特殊工况下避免反向通流；
3、本发明的动态保护单元具有元件方便选型、控制简单、抵御dv/dt能力强的优点，可实现在阳极出现较大dv/dt的时刻针对性产生负的门阴极电压，降低失效风险，降低了对整个回路的总阻抗要求，保护效果更好，并具有记忆效应，同时能够防止在驱动完全失电期间静态保护单元与器件本身阳极结构的结合导致器件失去反向阻断能力，在某些特殊工况下避免反向通流，降低器件失效风险。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从 说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了本发明的一种功率半导体器件的驱动保护电路的结构示意图；
图2示出了静态保护单元的多个开关元件并联电路；
图3示出了静态保护单元的多个开关元件串并联电路；
图4示出了静态保护单元的多个开关元件与单向通流元件串并联电路；
图5示出了动态保护单元的开关元件与电压互感装置串联电路；
图6示出了动态保护单元的开关元件与电压互感装置、储能电容、单向通流元件串并联电路。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地说明，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
一种功率半导体器件的驱动保护电路，如图1所示，包括开通及关断模块、静态保护单元和动态保护单元；
开通及关断模块、静态保护单元和动态保护单元相互并联，均连接有功率半导体器件，且均设置在功率半导体的门极与阴极之间；
动态保护单元还与功率半导体器件的阳极连接。
需要说明的是，驱动保护电路可分为静态保护单元与动态保护单元，静态保护单元和动态保护单元均连接在功率半导体器件的门极、阴极与阳 极中的两极或三极之间。
进一步地，静态保护单元为多个开关元件并联电路或多个开关元件串并联电路或多个开关元件与单向通流元件串并联电路，动态保护单元为开关元件与电压互感装置串联电路或开关元件与电压互感装置、储能电容、单向通流元件串并联电路。
进一步地，如图2所示，多个开关元件并联电路包括并联设置的第一支路和第二支路，第一支路设置有第一开关元件S1，第二支路设置有第二开关元件S2，第一支路和第二支路均分别与功率半导体器件的门极与阴极电性连接。
需要说明的是，静态保护单元由开关元件S1和开关元件S2并联构成，其中S1导通电阻极低，且在驱动失电期间可保证可靠闭合，对其开关时间无特殊要求；S2导通电阻较低，且在施加开关驱动信号时可迅速响应，对其常开常闭特性无特殊要求。一种S1的选择方案是常闭型机械继电器，一种S2的选择方案是固态继电器，另一种S2的选择方案是增强型MOSFET。
多个开关元件并联电路的控制方法：驱动完全失电期间、上下电过程中S1保持闭合；上电过程中S2由断开转为闭合，下电过程中S2由闭合转为断开；上电完成时S1先断开，此时S2依旧保持闭合，在S1完全断开后S2再断开，同时驱动的其他电路(开通及关断模块)投入工作，二者实现无延时切换；需要下电时驱动的其他电路切除工作，同时S2迅速闭合，二者实现无延时切换，之后S1再闭合，维持整个下电过程直至驱动完全失电。此电路具有元件方便选型、控制简单、各部分电路配合迅速的优点，可保证任何情况下功率半导体器件的门阴极之间均不处在悬浮状态，极大提升了器件关断的可靠性，降低失效风险。
进一步地，如图3所示，多个开关电路串并联电路包括并联的第一支路和第二支路，第一支路设置有第一开关元件S1，且第一支路两端分别与功率半导体器件的门极与阴极连接，第二支路包括串联的第二开关元件S2与第三开关元件S3，且第二支路两端分别与功率半导体器件的门极与阴极电性连接。
需要说明的是，图3在图2的基础上在S2支路串入开关元件S3，S3 导通电阻极低，且在断开时漏电流极小，对其开关时间和常开常闭特性无特殊要求，其中S3的一种选择方案是常开型机械继电器。
多个开关电路串并联电路的控制方法：上下电过程中需要串联支路闭合时S3先于S2闭合，需要串联支路断开时S3与S2同时断开；以保证整个串联支路的通断特性由响应速度极快的S2决定。其余的控制逻辑与图2的方案相同。
此电路具有上述方案的全部优点，且大幅降低了静态保护单元在不工作时的泄漏电流，有利于功率半导体器件正常的开通动作，同时降低损耗。
进一步地，如图4所示，多个开关元件与单向流通元件串并联电路包括并联的第一支路和第二支路，第一支路包括串联的第一开关元件S1和单向流通元件D1，第二支路包括串联的第二开关元件S2和第三开关元件S3，第一支路和第二支路一端均与功率半导体元器件的门极连接，另一端均与功率半导体元器件的阴极连接。
需要说明的是，图4在图3的基础上，在S1支路串入单向通流元件D1构成第二串联支路，D1导通电压尽可能低，浪涌电流能力强，对其他特性无特殊要求，其中D1的一种选择方案是肖特基二极管。
其控制方法为：驱动完全失电期间、上下电过程中S1保持闭合；上电过程中S3先于S2由断开转为闭合，下电过程中S2与S3同时由闭合转为断开；上电完成时S2与S3断开，同时驱动的其他电路(开通及关断模块)投入工作，之后S1断开，实现无延时切换；需要下电时驱动S1先闭合，等待稳定后其他电路(开通及关断模块)切除工作，同时S2迅速闭合，二者实现无延时切换，维持整个下电过程直至驱动完全失电。
此电路具有上述方案的全部优点，且能够防止在驱动完全失电期间静态保护单元与器件本身阳极结构的结合导致器件失去反向阻断能力，在某些特殊工况下避免反向通流，降低器件失效风险。
进一步地，如图5所示，开关元件与电压互感装置串联电路包括第四开关元件S4和电压互感装置VT，电压互感装置VT包括副边和原边，第四开关元件S4一端与副边串联，另一端与功率半导体器件门极连接，副边一端与功率半导体器件阴极连接，原边的两端分别与功率半导体器件的阳 极和阴极连接。
需要说明的是，动态保护单元由开关元件S4和电压互感装置VT串联构成，其中S4导通电阻极低，且在驱动失电期间可保证可靠闭合，对其开关时间无特殊要求；VT能够在高压侧出现较大dv/dt时，低压侧感应出一定的电压，且高压侧拥有直流阻断特性。
一种S1的选择方案是常闭型机械继电器，一种VT的选择方案是电容耦合型电压互感装置，另一种VT的选择方案是带有电容隔离的变压器。
开关元件与电压互感装置串联电路的控制方法：驱动完全失电期间、上下电过程中S4保持闭合；当器件阳极出现正向dv/dt时，VT产生负向电压施加在器件门阴极之间，从而将阳极dv/dt导致的位移电流从门极引出。驱动上电完成后S4断开，VT不再发挥作用。
此电路具有元件方便选型、控制简单、抵御dv/dt能力强的优点，可实现在阳极出现较大dv/dt的时刻针对性产生负的门阴极电压，降低失效风险，降低了对整个回路的总阻抗要求，保护效果更好。
进一步地，如图6所示，开关元件与电压互感装置、储能电容、单向通流元件串并联电路，包括第四开关元件S4、电压互感装置VT、第三单向流通元件D3、过压保护元件T2、储能电容C1和第一串联支路，电压互感装置VT包括副边和原边，原边的两端分别与功率半导体器件的阳极和阴极连接，第一串联支路包括串联的副边和第二单向通流元件D2，第四开关元件S4一端串联有相互并联的第一串联支路、过压保护元件T2、第三单向流通元件D3和储能电容C1，且第四开关元件S4另一端与功率半导体器件门极连接，第一串联支路一端与功率半导体器件阴极连接。
需要说明的是，在图5方案的基础上，图6方案在VT支路串入单向通流元件D2构成第一串联支路，之后串联支路与单向通流元件D3、过压保护元件T2、储能电容C1并联。其中D2，D3导通电压尽可能低，浪涌电流能力强，对其他特性无特殊要求；T2保护阈值小于或等于功率半导体元件门阴极反向击穿电压；C1无特殊要求。
需要说明的是，一种D2、D3的选择方案是肖特基二极管，一种T2的选择方案是TVS管，一种C1的选择方案是MLCC。
需要说明的是，开关元件与电压互感装置、储能电容、单向通流元件串并联电路控制方法：在上述方案的基础上，VT产生的反向电流可通过D2注入到C1中存储起来，且C1的电压不超过T2的保护阈值，可对dv/dt的抵御具有记忆效应，增长功率半导体器件门极电位低于阴极电位的时间。
此电路具有抵御dv/dt能力强、器件门阴极击穿风险低的优点，可实现在阳极出现较大dv/dt的时刻针对性产生负的门阴极电压，降低失效风险，并具有记忆效应。同时D2与D3能够防止在驱动完全失电期间静态保护单元与器件本身阳极结构的结合导致器件失去反向阻断能力，在某些特殊工况下避免反向通流，降低器件失效风险。
进一步地，功率半导体器件包括但不限于晶闸管、门极关断晶闸管、集成门极换流晶闸管、发射极关断晶闸管、绝缘栅双极晶体管。
进一步地，驱动保护电路包括静态保护单元和动态保护单元中的一种或二者组合。
需要说明的是，驱动保护电路可由上述静态保护单元与动态保护单元任意一种单独实现，亦可由二者结合实现，需要说明的是，上述各方案均为实施例，任意可实现在功率半导体器件驱动完全失电期间、上电过程中及下电过程中实现功率半导体器件门极电位低于阴极，或实现门极与阴极之间电位差小于功率半导体门阴极导通电压的电路均在保护范围之内。
需要说明的是，静态保护单元实现方案可由多个开关元件及单向通流元件串联、并联、混联构成。开关元件包含但不限于机械、半导体的常开、常闭型开关元件。
动态保护单元实现方案可由多个开关元件、单向通流元件、电压互感装置、储能电容等串联、并联、混联构成。开关元件包含但不限于机械、半导体的常开、常闭型开关元件。电压互感装置包含但不限于变压器、电容耦合型电压互感装置、磁场耦合型电压互感装置、光电耦合型电压互感装置等。
一种功率半导体器件的驱动保护电路的控制方法，在完全失电时，静态保护单元和动态保护单元运行，开通及关断模块不运行；
在上电过程中，先由静态保护单元和动态保护单元运行，上电完成时 开关及关断模块投入运行，静态保护单元和动态保护单元停止运行；
或当上电完成时，动态保护单元先停止运行，之后开通及关断模块投入运行，同时静态保护单元停止运行；
或当完成上电时，动态保护单元先停止运行，之后开通及关断模块投入运行，之后静态保护单元停止运行；
在下电之前，由开通及关断模块保证功率半导体器件门极与阴极间的电位差小于功率半导体器件门极与阴极的导通电压；
在下电过程中，静态保护单元和动态保护单元运行，同时开通关断模块停止运行；
或在下电过程中，静态保护单元先投入运行，同时开通及关断模块停止运行，之后动态保护单元投入运行；
或在下电过程中，静态保护单元先投入运行，之后开通及关断模块停止运行，之后动态保护单元投入运行。
进一步地，在完全失电是、上电过程中和下电过程中，静态保护单元均用于保证功率半导体器件的门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，动态保护单元均用于保证功率半导体器件阳极出现较大的瞬时电压时功率半导体器件的门极电位低于阴极电位。
需要说明的是，在完全失电时，静态保护单元构成功率半导体器件门极与阴极间的通路，保证任何时刻当门极与阴极之间产生正向电流时，为此电流提供流通路径，保证门极与阴极间的电位差小于功率半导体门极与阴极的导通电压；动态保护单元在器件阳极出现较大的瞬时电压时，通过吸收瞬时电压的能量，在功率半导体元件阴极与门极之间产生短时正向电压，保证功率半导体器件的门极电位低于阴极电位；开通及关断模块不运行。
在上电过程中，先由静态保护单元保证门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，动态保护单元保证器件阳极出现较大的瞬时电压时功率半导体器件的门极电位低于阴极电位；当完成上电时，开通及关断模块投入运行，由开通及关断模块保证门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，同时静态保护单元、动态保护单元 停止运行；或当完成上电时，动态保护单元先停止运行，之后开通及关断模块投入运行，同时静态保护单元停止运行；或当完成上电时，动态保护单元先停止运行，之后开通及关断模块投入运行，之后静态保护单元停止运行。
在下电之前，先由开通及关断模块保证门极与阴极间的电位差小于功率半导体门极与阴极的导通电压；在下电过程中，由静态保护单元保证门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，动态保护单元保证器件阳极出现较大的瞬时电压时功率半导体器件的门极电位低于阴极电位，同时开通及关断模块停止运行；或在下电过程中，静态保护单元先投入运行，同时开通及关断模块停止运行，之后动态保护单元投入运行；或在下电过程中，静态保护单元先投入运行，之后开通及关断模块停止运行，之后动态保护单元投入运行。
若功率半导体器件的驱动保护电路仅包含静态保护单元，或仅包含静态保护单元，则在上述控制方法中对应去掉动态保护单元，或静态保护单元相关描述即可。
尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (11)

  1. 一种功率半导体器件的驱动保护电路，其特征在于，包括开通及关断模块、静态保护单元和动态保护单元；
    所述开通及关断模块、静态保护单元和动态保护单元相互并联，均连接有功率半导体器件，且均设置在功率半导体的门极与阴极之间；
    所述动态保护单元还与功率半导体器件的阳极连接。
  2. 根据权利要求1所述的一种功率半导体器件的驱动保护电路，其特征在于，所述静态保护单元为多个开关元件并联电路或多个开关元件串并联电路或多个开关元件与单向通流元件串并联电路，所述动态保护单元为开关元件与电压互感装置串联电路或开关元件与电压互感装置、储能电容、单向通流元件串并联电路。
  3. 根据权利要求2所述的一种功率半导体器件的驱动保护电路，其特征在于，所述多个开关元件并联电路包括并联设置的第一支路和第二支路，所述第一支路设置有第一开关元件S1，所述第二支路设置有第二开关元件S2，所述第一支路和第二支路均分别与功率半导体器件的门极与阴极电性连接。
  4. 根据权利要求2所述的一种功率半导体器件的驱动保护电路，其特征在于，所述多个开关电路串并联电路包括并联的第一支路和第二支路，所述第一支路设置有第一开关元件S1，且第一支路两端分别与功率半导体器件的门极与阴极连接，所述第二支路包括串联的第二开关元件S2与第三开关元件S3，且第二支路两端分别与功率半导体器件的门极与阴极电性连接。
  5. 根据权利要求2所述的一种功率半导体器件的驱动保护电路，其特征在于，所述多个开关元件与单向流通元件串并联电路包括并联的第一支路和第二支路，所述第一支路包括串联的第一开关元件S1和单向流通元件D1，所述第二支路包括串联的第二开关元件S2和第三开关元件S3，所述第一支路和第二支路一端均与功率半导体元器件的门极连接，另一端均与功率半导体元器件的阴极连接。
  6. 根据权利要求2-5任一项所述的一种功率半导体器件的驱动保护电 路，其特征在于，所述开关元件与电压互感装置串联电路包括第四开关元件S4和电压互感装置VT，所述电压互感装置VT包括副边和原边，所述第四开关元件S4一端与副边串联，另一端与功率半导体器件门极连接，所述副边一端与功率半导体器件阴极连接，所述原边的两端分别与功率半导体器件的阳极和阴极连接。
  7. 根据权利要求2-5任一项所述的一种功率半导体器件的驱动保护电路，其特征在于，所述开关元件与电压互感装置、储能电容、单向通流元件串并联电路，包括第四开关元件S4、电压互感装置VT、第三单向流通元件D3、过压保护元件T2、储能电容C1和第一串联支路，所述电压互感装置VT包括副边和原边，所述原边的两端分别与功率半导体器件的阳极和阴极连接，所述第一串联支路包括串联的副边和第二单向通流元件D2，所述第四开关元件S4一端串联有相互并联的第一串联支路、过压保护元件T2、第三单向流通元件D3和储能电容C1，且所述第四开关元件S4另一端与功率半导体器件门极连接，所述第一串联支路一端与功率半导体器件阴极连接。
  8. 根据权利要求1所述的一种功率半导体器件的驱动保护电路，其特征在于，所述功率半导体器件包括晶闸管、门极关断晶闸管、集成门极换流晶闸管、发射极关断晶闸管、绝缘栅双极晶体管。
  9. 根据权利要求1所述的一种功率半导体器件的驱动保护电路，其特征在于，所述驱动保护电路包括静态保护单元和动态保护单元中的一种或二者组合。
  10. 一种功率半导体器件的驱动保护电路的控制方法，其特征在于，在完全失电时，静态保护单元和动态保护单元运行，开通及关断模块不运行；
    在上电过程中，先由静态保护单元和动态保护单元运行，上电完成时开关及关断模块投入运行，静态保护单元和动态保护单元停止运行；
    或当上电完成时，动态保护单元先停止运行，之后开通及关断模块投入运行，同时静态保护单元停止运行；
    或当完成上电时，动态保护单元先停止运行，之后开通及关断模块投 入运行，最后静态保护单元停止运行；
    在下电之前，由开通及关断模块保证功率半导体器件门极与阴极间的电位差小于功率半导体器件门极与阴极的导通电压；
    在下电过程中，静态保护单元和动态保护单元运行，同时开通关断模块停止运行；
    或在下电过程中，静态保护单元先投入运行，同时开通及关断模块停止运行，最后动态保护单元投入运行；
    或在下电过程中，静态保护单元先投入运行，然后开通及关断模块停止运行，最后动态保护单元投入运行。
  11. 根据权利要求10所述的一种功率半导体器件的驱动保护电路的控制方法，其特征在于，在完全失电时、上电过程中和下电过程中，所述静态保护单元均用于保证功率半导体器件的门极与阴极间的电位差小于功率半导体门极与阴极的导通电压，所述动态保护单元均用于保证功率半导体器件阳极出现较大的瞬时电压时功率半导体器件的门极电位低于阴极电位。
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CN112363040A (zh) * 2020-10-29 2021-02-12 株洲中车时代半导体有限公司 功率半导体器件门极驱动检测电路及其控制方法
CN112803373A (zh) * 2020-12-14 2021-05-14 株洲中车时代半导体有限公司 功率半导体器件保护电路、控制方法、存储介质以及设备
CN115085705A (zh) * 2022-05-11 2022-09-20 清华大学 一种功率半导体器件的驱动保护电路及控制方法

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