WO2023210869A1 - Method for preparing silicon anode material, for lithium-ion secondary battery, to which boron oxide is applied - Google Patents

Method for preparing silicon anode material, for lithium-ion secondary battery, to which boron oxide is applied Download PDF

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WO2023210869A1
WO2023210869A1 PCT/KR2022/009196 KR2022009196W WO2023210869A1 WO 2023210869 A1 WO2023210869 A1 WO 2023210869A1 KR 2022009196 W KR2022009196 W KR 2022009196W WO 2023210869 A1 WO2023210869 A1 WO 2023210869A1
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silicon
boron oxide
plate
oxide
anode material
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PCT/KR2022/009196
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French (fr)
Korean (ko)
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전관구
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주식회사 이큐브머티리얼즈
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Publication of WO2023210869A1 publication Critical patent/WO2023210869A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/48Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/58Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
    • H01M4/583Carbonaceous material, e.g. graphite-intercalation compounds or CFx
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Definitions

  • the present invention relates to a method of manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied. More specifically, by using plate-shaped silicon formed from a waste silicon kerf, not only can the unit cost of the anode material be lowered, but also boron oxide can be used. This relates to a method of manufacturing a silicon anode material for a lithium-ion secondary battery using boron oxide, which can produce a silicon anode material with improved initial capacity and lifespan performance.
  • graphite has been used as the negative electrode active material for lithium-ion secondary batteries.
  • Graphite has a theoretical capacity of 372 mAh/g of lithium ion charging capacity, and in reality, it is a material with a capacity of 360 mAh/g and has a layered structure, with a mechanism in which lithium is inserted between layers and charged.
  • silicon is a lithium ion storage material for anode materials that has a larger capacity than graphite.
  • Silicon is a material with a theoretical capacity of 4200mAh/g.
  • four lithium ions are combined with one silicon, causing the volume to expand more than three times.
  • Silicon, which has expanded in volume cannot return to its original state when lithium escapes, cracks occur, and is separated into fine nanoparticles, many of which are electrically disconnected from the electrolyte or electrolyte solution, making it impossible to recharge lithium.
  • silicon anode active material has a short charge/discharge life and has not been used as an anode active material to replace graphite.
  • Silicon used as a negative electrode active material is mainly made of metallic silicon with a purity of 99.9% or higher. Since it was discovered that cracks caused by lithium charging and discharging are reduced when nano-sized silicon is used, much effort has been made to create nano-silicon.
  • a method of using plasma to decompose micro particles and recombine them into nano size a method of making silicon into a small rod and explosively vaporizing it in a solution by passing a large current to make it into nano size, melting it with silane gas or liquid and thermally decomposing it, and then making it into nano size. How to recombine by size, etc.
  • waste silicon kerf (silicon kerf) generated in the process of cutting a lump of metal silicon into thin pieces to obtain a silicon wafer in the solar cell industry or semiconductor industry is used.
  • the waste silicon cuff is high-purity silicon with a purity of 99.9999999% to 99.999999999% used in the solar cell industry or semiconductor industry, and by using a wire-shaped saw, it comes off as a nano-thick plate-shaped material.
  • Such high-purity plate-shaped silicon is a good candidate for anode active material for lithium secondary batteries.
  • the present invention was proposed to improve this conventional problem.
  • the unit cost of the anode material can be lowered, and by applying boron oxide, the initial capacity and lifespan can be improved.
  • the purpose is to provide a method for manufacturing silicon anode materials for lithium-ion secondary batteries using boron oxide, which can produce silicon anode materials with improved performance.
  • the method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied is to crush the plate-shaped silicon formed from a waste silicon kerf to an apparent particle size of 0.1 to 0.4 g/cm3.
  • First disintegration step to create density An oxidation step of oxidizing the surface of the plate-shaped silicon particles to form silicon oxide with an oxide film; It may include a boron oxide coating step of coating boron oxide on the surface of the silicon oxide to form a boron oxide coating film, and a carbon coating step of coating the surface of the boron oxide coating film with conductive carbon to form a plate-shaped silicon composite with a carbon coating film.
  • a pretreatment step of wet milling and drying the plate-shaped silicon to form plate-shaped silicon particles may be further included.
  • a secondary disintegration step of disintegrating the silicon oxide on which the boron oxide coating film is formed may be further included.
  • a mixing step of mixing the plate-shaped silicon composite and graphite to form a mixture may be further included.
  • the plate-shaped silicon is characterized in that it is formed with an average thickness of 10 to 100 nm and an average length of 10 ⁇ m or less.
  • the oxidation step is characterized in that the silicon oxide film is formed with an average thickness of 2 to 10 nm.
  • the oxidation step is characterized in that an oxidizing agent is added to the plate-shaped silicon particles and heated to 700 to 1,100°C.
  • the boron oxide coating step is characterized by adding an aqueous boric acid solution to the silicon oxide and heating it to 550 to 700°C.
  • the carbon coating step is characterized in that the average thickness of the carbon coating film is formed to be 3 to 20 nm.
  • the carbon coating step is characterized in that one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas is selected and added to the silicon oxide that has completed the boron oxide coating step, and thermally decomposed at 750 to 1000 ° C.
  • the method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention can lower the unit cost of the anode material by using plate-shaped silicon formed from a waste silicon kerf.
  • Figure 1 is a flow chart of a method for manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied according to an embodiment of the present invention.
  • Figure 2 is a flow chart of Figure 1 further including a pretreatment step, a secondary disintegration step, and a mixing step.
  • Figure 3 is an SEM photo of plate-shaped silicon used in the method of manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention.
  • Figure 4 is an example diagram showing the appearance of the plate-shaped silicon of Figure 3.
  • Figure 5 is an exemplary diagram showing the appearance of plate-shaped silicon particles formed in the pretreatment step of Figure 2.
  • Figure 6 is an exemplary diagram showing the appearance of silicon oxide formed in the oxidation step of Figure 2.
  • FIGS. 7A and 7B are TEM images of the silicon oxide of FIG. 6.
  • Figure 8 is an example diagram showing boron oxide partially coated on silicon oxide in the boron oxide coating step of Figure 2.
  • Figure 9 is an exemplary diagram showing the appearance of a plate-shaped silicon composite formed in the carbon coating step of Figure 2.
  • Figure 10 is a TEM photo of the plate-shaped silicon composite of Figure 9.
  • Figure 11 is an exemplary view showing the mixture formed in the mixing step of Figure 2.
  • Figure 12 is an exemplary view showing another type of mixture formed in the mixing step of Figure 2.
  • Figure 13 is a graph of the half cell charge/discharge test results of Comparative Example 1.
  • Figure 14 is a graph of the half cell charge/discharge test results of Comparative Example 2.
  • Figure 15 is a graph of the half cell charge/discharge test results of Comparative Example 3.
  • Figure 16 is a graph of the half cell charge/discharge test results of Example 1.
  • Figure 17 is a graph of the half cell charge/discharge test results of Example 2.
  • the method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied is a first step of disintegrating plate-shaped silicon formed from a waste silicon kerf to have an apparent density of 0.1 to 0.4 g/cm3.
  • An oxidation step of oxidizing the surface of the plate-shaped silicon particles to form silicon oxide with an oxide film It may include a boron oxide coating step of coating boron oxide on the surface of the silicon oxide to form a boron oxide coating film, and a carbon coating step of coating the surface of the boron oxide coating film with conductive carbon to form a plate-shaped silicon composite with a carbon coating film.
  • Figure 1 is a flowchart of a method for manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied according to an embodiment of the present invention
  • Figure 2 is a flowchart further including a pretreatment step, a secondary disintegration step, and a mixing step in Figure 1
  • Figure 3 is an SEM photograph of plate-shaped silicon used in the method of manufacturing a silicon anode material for lithium ion secondary batteries to which boron oxide is applied according to an embodiment of the present invention
  • Figure 4 is an exemplary view showing the shape of plate-shaped silicon in Figure 3
  • Figure 5 is an exemplary diagram showing the appearance of plate-shaped silicon particles formed in the pretreatment step of FIG. 2, FIG.
  • FIG. 6 is an exemplary diagram showing the appearance of silicon oxide formed in the oxidation step of FIG. 2, and FIGS. 7A and 7B are the silicon oxide of FIG. 6.
  • FIG. 6 is a TEM photo
  • Figure 8 is an example diagram showing boron oxide partially coated on silicon oxide in the boron oxide coating step of Figure 2
  • Figure 9 is a view of the plate-shaped silicon composite formed in the carbon coating step of Figure 2.
  • Figure 10 is a TEM photo of the plate-shaped silicon composite of Figure 9
  • Figure 11 is an example showing the mixture formed in the mixing step of Figure 2
  • Figure 12 is another shape formed in the mixing step of Figure 2. This is an example diagram showing the appearance of a mixture.
  • the present invention not only lowers the unit cost of the anode material by using plate-shaped silicon formed from a waste silicon kerf, but also uses boron oxide to produce a silicon anode material with improved initial capacity and lifespan performance. It relates to a method of manufacturing silicon anode materials for secondary batteries.
  • the method for manufacturing a silicon anode material for a lithium ion secondary battery using boron oxide includes a first disintegration step (S10), an oxidation step (S20), a boron oxide coating step (S30), and a carbon It may include a coating step (S40).
  • the plate-shaped silicon 10 formed of a waste silicon kerf is disintegrated to have an apparent density of 0.1 to 0.4 g/cm3.
  • the plate-shaped silicon 10 can be disintegrated to form spaces between particles.
  • the oxide film 31 can be formed uniformly in the oxidation step (S20), which is a post-process.
  • the plate-shaped silicon 10 may be a powder formed in a plate shape, as shown in FIGS. 3 and 4.
  • Plate-shaped silicon can be formed from waste silicon cuffs (cutting fines) generated during the process of thinly slicing a silicon ingot for solar cells or semiconductors.
  • a waste silicon cuff can be obtained through classification, washing, precipitation, and drying steps.
  • a waste silicone cuff made through a diamond wire saw it is preferable to use a waste silicone cuff made through a diamond wire saw, but is not limited to this.
  • a diamond wire saw is a method of cutting silicon ingots using water or diethylene glycol as a lubricant with diamond particles randomly embedded on the surface of a carbon steel wire called a piano wire of about 50 ⁇ m.
  • Silicon ingots include single crystal ingots and polycrystalline ingots, and have the advantage that all cutting fines are suitable for the plate-shaped silicon (10) of the present invention.
  • the plate-shaped silicon 10 formed of a waste silicon kerf may be formed to have an average thickness of 10 to 100 nm and an average length of 10 ⁇ m or less.
  • the average thickness of the plate-shaped silicon 10 is less than 10 nm, too much is lost when forming the oxide film 31, and the initial capacity may be less than 60% of the pre-processing value, which may greatly reduce economic efficiency. If the average thickness exceeds 100 mm, This is because in the case where the ratio of the oxide film 31 is less than 20%, the number of particles increases, and the effect of improving lifespan performance may be greatly reduced.
  • the average length of the plate-shaped silicon 10 is more than 10 ⁇ m, when mixed with graphite particles, a lot of empty space is formed between the graphite 51 and the plate-shaped silicon composite 40 particles, so that the porosity in the same space increases and the filling rate increases. Otherwise, the discharge capacity may drop significantly in the same volume.
  • the plate-shaped silicon 10 may be bent and curled as strong force is applied during the cutting process and the silicon separates from the single crystal into a plate shape, and many fine single crystals may be weakly attached. Accordingly, the plate-shaped silicon 10 can be made into a state more suitable for an anode material through crushing pretreatment.
  • the method for manufacturing a silicon anode material for a lithium ion secondary battery of the present invention may include a pretreatment step (S5) before the first disintegration step (S10).
  • the pretreatment step (S5) can produce plate-shaped silicon particles (2) as shown in FIG. 5 by wet milling and drying the plate-shaped silicon (10) before the first disintegration step (S10).
  • the method of wet milling the plate-shaped silicon 10 may be a bead mill (ball mill), ultrasonic dispersion, or high-pressure homogenizer dispersion method.
  • the bead mill mixes 5 to 30% of plate-shaped silicon (10) in water or an organic solvent, then rotates it with zirconia or alumina beads in a zirconia or alumina container and crushes it by friction and impact force between balls.
  • the bead mill preferably uses beads with a diameter of 0.5 to 3 mm, and crushes them by rotating them at 1,000 to 5,000 rpm based on a container diameter of 100 mm.
  • the impact force may be weak and crushing may not be possible, and if it is more than 3mm, the number of beads may be too small, reducing the probability of collision with the plate-shaped silicon (10), making crushing time unnecessary. It can be long.
  • the rotation speed is less than 1000 rpm, the energy required for crushing may be low and the energy required for crushing may not be sufficient, and if it exceeds 5000 rpm, bead wear may occur due to excessive high energy and may be mixed with the plate-shaped silicon 10 as an impurity.
  • Ultrasonic dispersion is a method of attaching an amplifying horn and a vibrating horn to an ultrasonic vibrator and applying ultrasonic vibration to the solution to disperse or destroy the particles in the solution. It is desirable for ultrasonic dispersion to process the plate-shaped silicon 10 under the conditions of a frequency of 20 to 35 KHz, an amplitude of 20 to 200 ⁇ m, and a vibrator power consumption of 200 W or more. In addition, ultrasonic dispersion is possible by mixing plate-shaped silicon 10 in water or an organic solvent in a range of 30% or less and then receiving ultrasonic vibrations from a plurality of oscillators while passing through a passage in which a plurality of oscillators are arranged in a row.
  • the vibrator power consumption is less than 200W, the energy may be too low and almost no shredding may occur.
  • the frequency is less than 20 KHz, it may not be easy to operate because it cannot exceed the audible frequency, and if it is more than 35 KHz, it only reduces the durability of the vibrator and vibration generator and has no effect on shredding or improving the working environment.
  • the plate-shaped silicon 10 is mixed in water or an organic solvent in an amount exceeding 30%, the viscosity may become too high and the transmission range of ultrasonic vibration may not be wide.
  • a high-pressure homogenizer is a device that disperses or destroys the powder in the solution by applying pressure using a pump to pass the solution through a fine nozzle in the opposite direction.
  • a high-pressure homogenizer that combine collision, such as a method of colliding with a diamond plate after passing through a fine nozzle, or a method of colliding solutions with each other by passing through a nozzle in both directions.
  • a method of mixing plate-shaped silicon (10) in water or an organic solvent in the range of 30% or less, pressurizing at 500 bar or more, passing through a fine nozzle of 50 to 200 ⁇ m, and colliding or mutually colliding with a diamond plate is used. It's good.
  • the plate-shaped silicon 10 is mixed in water or an organic solvent in an amount exceeding 30%, the viscosity may become too high, making it difficult to inject into the fine nozzle. Additionally, if the pressure is less than 500 bar, the collision energy may be weakened and crushing may be almost impossible.
  • the fine nozzle diameter is less than 50 ⁇ m, nozzle clogging may occur frequently, which may make process operation difficult. If it exceeds 200 ⁇ m, the collision energy may be so weak that crushing may hardly occur.
  • the crushed plate-shaped silicon particles 20 obtained from one of the above bead mills, dispersers, and homogenizers are recovered in a dried powder state.
  • various drying devices capable of vaporizing moisture and organic solvents can be used, but it is preferable to use a spray dryer or a disk dryer.
  • the spray dryer spreads the dispersion solution containing the crushed plate-shaped silicon particles 20 into the atmosphere through a spray nozzle or a rotating disk nozzle (atomizer) and injects heated gas to rotate around the nozzle, causing the solution to scatter.
  • the disk dryer has high thermal efficiency, and the dispersion solution containing the crushed plate-shaped silicon particles (20) is dropped little by little onto a heated rotating disk, dried, and the dried residue, the crushed and dried plate-shaped silicon particles (20), is recovered by scraping with a ceramic knife. This is the way to do it.
  • Disk dryers have good thermal efficiency, but have the disadvantage of recovering powder with a high apparent density.
  • the crushed and dried plate-shaped silicon particles 20 can be pulverized to form spaces between the particles.
  • the crushed and dried plate-shaped silicon particles 20 have an apparent density of 1 to 2 g/cm3, which is pulverized at 3,000 rpm under air in the first crushing step (S10), and have an apparent density of 0.2 to 0.4 g/cm3. Plate-shaped silicon particles 20 can be obtained.
  • the average distance between particles of the plate-shaped silicon particles 20 may be 3 to 10 times greater than that of the crushed and dried plate-shaped silicon 10. Therefore, the first disintegration step (S10) can ensure that the oxide film 31 is formed uniformly in the subsequent oxidation step (S20).
  • the primarily pulverized plate-shaped silicon 10 or plate-shaped silicon particles 20 have a high specific surface area of 10 m 2 /g or more, and thus have a large contact area with the electrolyte solution or electrolyte.
  • These characteristics of plate-shaped silicon ensure high charging and discharging speeds, but there is a problem in that silicon shattering occurs quickly due to rapid charging and discharging.
  • the present invention reduces the charge and discharge speed by forming an oxide film 31 on the plate-shaped silicon 10 or plate-shaped silicon particles 20 in the oxidation step (S20), which will be described below.
  • the oxidation step (S20) oxidizes the surface of the plate-shaped silicon 10 or the plate-shaped silicon particles 20 to create silicon oxide 30 on which the oxide film 31 is formed.
  • the description will be based on the plate-shaped silicon particles 20.
  • the oxidation step (S20) may be performed by additionally oxidizing the naturally formed oxide film on the surface of the plate-shaped silicon particle 20 to form a thick oxide film.
  • the oxide film 31 is formed in an amorphous state, and when lithium approaches the oxide film 31, the gap between the oxide films 31 is filled with lithium and a battery conductive line penetrating the oxide film 31 may be formed.
  • the oxide film 31 can allow the electrolyte solution or lithium in the electrolyte to slowly diffuse into the plate-shaped silicon particles 20. Accordingly, the silicon anode material manufactured by the manufacturing method of the present invention lowers the bonding speed between lithium and the plate-shaped silicon particles 20 through the oxide film 31, so the charging capacity is somewhat lower than that of existing silicon, but the charge and discharge life is dramatically increased. You can.
  • an oxidizing agent may be added to the plate-shaped silicon particles 20 using a rotary kiln and heated to 700 to 1,100°C.
  • the heating temperature is less than 700°C, the formation rate of the oxide film 31 becomes too slow and the reaction time becomes excessively long, so the oxide film 31 may not be formed entirely or may be difficult to form to the desired thickness. If the heating temperature exceeds 1,100°C, In this case, the plate-shaped silicon particles 20 may be damaged due to excessive temperature or the process cost may be unnecessarily increased, which may result in inefficiency.
  • one or more of oxygen, water, and hydrogen peroxide can be used as the oxidizing agent, and the heating temperature can be adjusted depending on the type of oxidizing agent.
  • hydrogen peroxide when used as an oxidizing agent, it can be heated to 700 to 1,100°C, and when oxygen is used as an oxidizing agent, it can be heated to 900 to 1,100°C.
  • the rotary kiln uses a continuous heating furnace, so it has good thermal efficiency and can shorten working time.
  • the rotary kiln is composed of an input part for feeding the material to be treated into the kiln main body, a heat treatment section equipped with a kiln body for heating, and a discharge portion for discharging the heat-treated material.
  • the objects to be treated are continuously mixed and moved, so a uniform and thick oxide film 31 is formed, and the difference in the ratio of the oxide film 31 between particles can be reduced.
  • the average thickness of the oxide film 31 formed in the oxidation step (S20) may be 2 to 10 nm. If the average thickness of the oxide film 31 is less than 2 nm, a non-uniform oxide film 31 in the form of a point may be formed on the surface of the plate-shaped silicon particle 20, and the unoxidized portion on the surface of the plate-shaped silicon particle 20 may be in the form of a point. Since a large number of oxides are generated between the oxide films 31, the effect provided by the uniform oxide film 31 cannot be achieved. In other words, the lifespan performance improvement effect may not be desired.
  • the irreversible capacity which is the main reason for the decrease in initial discharge capacity, increases significantly to more than 30%, which may increase lithium consumption.
  • an oxide film 31 may be formed on the surface of the plate-shaped silicon particle 20 through the oxidation step (S20).
  • the boron oxide coating step (S30) may form a boron oxide coating film 32 by coating boron oxide on the surface of the silicon oxide 30.
  • the boron oxide coating step (S30) is to improve the disadvantage of increasing initial irreversibility because the oxide film 31 combines with lithium during initial charging and cannot release lithium during discharging, and forms a boron oxide coating film 32 by coating boron oxide. can do.
  • boron oxide has the characteristic of being crystalline at a relatively low temperature, so crystalline quality can be added to the amorphous oxide film 31, and through this, the bond between the oxide film 31 and lithium can be reduced without consuming lithium.
  • Boron oxide also has the advantage of being an inexpensive material that does not react with lithium.
  • the boron oxide coating step (S30) forms a boron oxide coating film 32 on the surface of the silicon oxide 30, thereby reducing the amount of bonding with lithium of the oxide film 31 to prevent initial irreversibility from increasing and initial capacity. and life performance can be improved.
  • the boron oxide coating film 32 can be formed partially rather than coating the entire surface of the silicon oxide 30. This is because boric acid is coated and thermally decomposed to form the boron oxide coating film 32. A non-uniform coating film may be formed.
  • the silicon oxide (30) that has completed the oxidation step (S20) is dispersed by adding it to an aqueous solution of boric acid, then dried through a dryer such as a spray dryer or disk dryer, and then reduced to 0.1 to 0.4 g using a grinder. It can be pulverized to an apparent density of /cm3.
  • the boric acid can be converted to boron oxide by heating to 550 to 700° C. using a rotary kiln to form the boron oxide coating film 32.
  • the heating temperature is less than 550°C, the boron oxide does not melt all and the adhesion to the oxide film 31 may decrease, and if the heating temperature exceeds 700°C, the amount that melts and flies away through vaporization increases, which may reduce the coating effect.
  • the process of converting boric acid to boron oxide involves an exothermic process and agglomeration occurs between particles, so the particles are pulverized through a grinder to form a distance between them.
  • the apparent density of the particles is preferably 0.1 to 0.4 g/cm3 as described above, but is not limited thereto.
  • the carbon coating step (S40) may be performed by coating the surface of the silicon oxide 30 with conductive carbon to form a plate-shaped silicon composite 40 with a carbon coating film 41 formed thereon.
  • the carbon coating step (S40) forms a carbon coating film 41 on the surface of the silicon oxide 30, thereby imparting electrical conductivity and smooth electron flow to the oxide film 31 and the boron oxide coating film 32, which are insulating layers. .
  • the carbon coating film 41 serves to maintain the amount and formation relationship of SEI (solid electrolyte interface), which is the interface between graphite and electrolyte (or electrolyte) in existing lithium ion secondary batteries, and plays a role in maintaining the formation relationship due to material changes. This can eliminate the inconvenience of having to change the electrolyte (or electrolyte).
  • SEI solid electrolyte interface
  • one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas can be selected and added to the silicon oxide 30 using a rotary kiln or kiln, and thermally decomposed at 750 to 1000 ° C.
  • hydrocarbon gas is a gas composed of carbon and hydrogen bonds, C 2 H 2 (acetylline), C 2 H 6 (ethane), C 2 H 4 (ethylene), CH 4 (methane), C 3 H 8 ( Propane), C 4 H 10 (butane), C 3 H 6 (propylene), C 4 H 8 (butylene), etc.
  • Hydrocarbon gas can be produced by vaporizing and thermally decomposing a hydrocarbon solution consisting of C, H, and O, such as ethanol, methanol, and toluene.
  • silicon oxide (30) is thermally decomposed at 750 to 800°C using ethylene gas as a hydrocarbon gas, or silicon oxide (30) is thermally decomposed at 950 to 1,000°C using liquefied natural gas to produce carbon. It is preferable to form a coating film 41, but it is not limited thereto.
  • the decomposition rate is less than 50%, resulting in unnecessary gas consumption, and if the temperature is higher than 800°C, the decomposition speed increases and a large amount of unnecessary by-product called carbon black can be produced.
  • the decomposition rate When using liquefied natural gas, if the temperature is less than 950°C, the decomposition rate is less than 50%, which results in unnecessary gas consumption. If it exceeds 1000°C, the decomposition rate is accelerated and a large amount of unnecessary by-products called carbon black can be produced. there is.
  • the carbon coating film 41 may be formed to have an average thickness of 3 to 20 nm.
  • the carbon coating film 41 is formed unevenly in the form of dots on the surface of the silicon oxide 30, resulting in many uncoated areas, which may not have a significant lifespan improvement effect. If it exceeds 20 nm, excessive coating increases the number of pores inside the carbon coating film 41, so lithium fills the pores and does not escape again, resulting in a significant increase in irreversible capacity.
  • a carbon coating film 41 may be formed on the surface of silicon oxide (30, in which an oxide film is formed on the surface of plate-shaped silicon particles) through the carbon coating step (S40).
  • the method for manufacturing a silicon anode material for a lithium ion secondary battery of the present invention may further include a secondary disintegration step (S35) after the boron oxide coating step (S30).
  • the second disintegration step (S35) can disintegrate the silicon oxide 30 that has been aggregated after the boron oxide coating step (S30) to reduce density.
  • the silicon oxide 30 can be pulverized with air in a pin mill with a radius of 110 to 130 mm and 3300 to 3500 rpm.
  • This second disintegration step (S35) separates the aggregated silicon oxide 30, and, like the first disintegration step (S10), the particles can have an apparent density of 0.1 to 0.4 g/cm3. Accordingly, the second disintegration step (S35) facilitates the formation of the boron oxide coating film 32 in the post-process boron oxide coating step (S30), and ensures that the carbon coating film 41 is formed uniformly in the carbon coating step (S40). can do.
  • the method for manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide of the present invention is applied may further include a mixing step (S50) after the carbon coating step (S40).
  • the mixing step (S50) may be performed by mixing the plate-shaped silicon composite 40 and graphite 51 after the carbon coating step (S40) to form mixtures 50a and 50b, for lithium ion secondary batteries to which spherical boron oxide is applied.
  • a silicon anode material 50a or a silicon anode material 50b for a lithium ion secondary battery to which simple boron oxide is applied can be formed.
  • the graphite 51 is a plate-shaped material, and even if it is spherical, an empty space is formed.
  • the empty space of the graphite 51 is filled with the plate-shaped silicon composite 40, thereby preventing the entire electrode from expanding due to expansion when lithium is combined and maintaining an electrical connection with the electrode due to shrinkage.
  • the mixture (50a, 50b) formed in the mixing step (S50) is a form in which the plate-shaped silicon composite (40) is bonded to the empty space of the graphite (51), and can prevent separation from the electrode when expanded by lithium.
  • the empty space of the graphite 51 serves as a buffer space.
  • the mixing step (S50) is a method of adding the plate-shaped silicon composite 40 in the process of spheroidizing the graphite 51, or a method of mixing the graphite 51 and the plate-shaped silicon composite 40 that have completed the spheroidization or spheroidization process. there is.
  • the plate-shaped silicon composite 40 when adding the plate-shaped silicon composite 40 in the process of spheroidizing the graphite 51 in the mixing step (S50), as shown in FIG. 11, the plate-shaped silicon composite 40 is formed between the plates of the graphite 51. ) is inserted, a spheroidized mixture 50a in the form of spheroidized or spheroidized graphite 51 may be formed.
  • a simple mixture 50b in the form of an arrangement may be formed.
  • the graphite 51 undergoes a spheroidization or spheroidization process, because spherical graphite has a low anisotropy and is advantageous for maintaining uniformity of voltage and current distribution.
  • spherical graphite has a low anisotropy and is advantageous for maintaining uniformity of voltage and current distribution.
  • flake-shaped graphite deteriorates the processability due to reduced fluidity during the subsequent mixing and slurry process with solvents or binders, and it is difficult to form a coating layer of a certain thickness, which can cause problems such as peeling. there is.
  • the spheroidization process removes the rough parts of the flake-shaped carbon material through mechanical rotation and smoothes the surface of the particle to make it spherical.
  • the plate-shaped silicon composite 40 and the graphite 51 can be mixed at a weight ratio of 31 to 10:90 to 99, and more preferably at a weight ratio of 5:95.
  • the content of the plate-shaped silicon composite 40 is lower than 1% by weight, the effect of increasing the charging capacity of the silicon anode material due to the mixing of the graphite 51 falls within the charging capacity deviation, making it difficult to determine the effect, and if it exceeds 10% by weight, the silicon particles As the number becomes greater than the number of graphite 51 particles, the uniform dispersion effect between the silicon particles and the graphite 51 may be reduced.
  • the method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied uses plate-shaped silicon formed from a waste silicon kerf, which can lower the unit cost of the anode material.
  • the polycrystalline silicon ingot was cooled, lubricated, and cut with a mixture of water and diethylene glycol using a 50 ⁇ m diameter diamond wioso, and 5,000 ml of a 5% mixed solution of plate-shaped silicon was recovered.
  • the dispersion solution was injected from a spray dryer into an atomizer disk rotating at 15,000 rpm at a rate of 20 ml per minute and dried at 140 degrees to obtain plate-shaped silicon particles.
  • Low-density plate-shaped silicon particles were made by grinding with air in a pin mill with a radius of 120 mm and 3400 rpm.
  • the plate-shaped silicon particles were oxidized by bubbling and injecting hydrogen peroxide with nitrogen while remaining in a rotary kiln at 800°C for 10 minutes.
  • the plate-shaped silicon particles changed from black gray to dark brown and became silicon oxide.
  • the silicon oxide was dispersed in an aqueous solution of boric acid for 30 minutes using a mixer at 3,000 rpm, and then injected into an atomizer disk rotating at 15,000 rpm in a spray dryer at a rate of 20 ml per minute and dried at 140°C.
  • boric acid was decomposed while remaining in a rotary kiln at 700°C for 10 minutes, and boron oxide was partially coated on the silicon oxide to form a boron oxide coating film.
  • the silicon oxide on which the boron oxide coating film was formed was stored in a rotary kiln at 800°C for 10 minutes while exhaling ethylene gas at 0.1 M/min. It was added at a high rate to form a carbon coating film on the surface, creating a plate-shaped silicon composite.
  • the prepared plate-shaped silicon composite was mixed with a binder and a conductive material, applied to copper foil, and punched into a coin shape.
  • a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
  • the plate-shaped silicon composite prepared in Example 1 and the spherical graphite were added to a dry ball mill at a weight ratio of 5:95 and mixed for 10 seconds to obtain a mixture.
  • a half-cell lithium ion battery was manufactured in the same manner as Example 1 using the above mixture.
  • the polycrystalline silicon ingot was cooled, lubricated, and cut with a mixture of water and diethylene glycol using a 50 ⁇ m diameter diamond wioso, and 5,000 ml of a 5% mixed solution of plate-shaped silicon was recovered.
  • the dispersion solution was injected from a spray dryer into an atomizer disk rotating at 15,000 rpm at a rate of 20 ml per minute and dried at 140 degrees to obtain plate-shaped silicon particles.
  • Low-density plate-shaped silicon particles were made by grinding with air in a pin mill with a radius of 120 mm and 3400 rpm. While plate-shaped silicon particles were kept in a rotary kiln at 800°C for 10 minutes, ethylene gas was blown at 0.1 M/min.
  • Carbon-coated silicon particles were manufactured by adding the product at a high rate to form a carbon coating film on the surface.
  • the prepared carbon-coated silicon particles, graphite, binder, and conductive material were mixed, applied to copper foil, and punched into a coin shape.
  • a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
  • the carbon-coated silicon particles prepared in Comparative Example 2 and spheroidized graphite were added to a dry ball mill at a weight ratio of 5:95 and mixed for 10 seconds to obtain a mixture.
  • the mixture was applied to copper foil and punched into a coin shape.
  • a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
  • the capacity was measured at 25°C and a charge/discharge current of 0.1C, and the lifespan was measured from 20 to 300 cycles at 25°C and a charge/discharge current of 0.1C.
  • Figures 13 to 17 are graphs of half cell charge/discharge test results for Comparative Examples 1 to 3 and Examples 1 and 2, respectively.
  • Comparative Example 1 showed a low initial capacity of 358 mAh/g, but it was confirmed that the lifespan performance satisfied 300 cycles (Figure 13)
  • Example 1 the initial capacity was slightly lower compared to Comparative Example 2, but it was confirmed that the lifespan performance was significantly improved, and the initial capacity was confirmed to be significantly increased compared to Comparative Example 1 (FIG. 16).
  • Example 2 it was confirmed that both the initial capacity and lifetime performance were improved compared to Comparative Example 2 without an oxide film and a boron oxide coating film (FIG. 17)

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Abstract

The present invention relates to a method for preparing a silicon anode material, for a lithium-ion secondary battery, to which boron oxide is applied and, more specifically, to a method for preparing a silicon anode material, for a lithium-ion secondary battery, to which boron oxide is applied, which can not only lower the unit price of an anode material by using planar silicon formed from silicon kerf, but also prepare a silicon material having a suppressed initial irreversible capacity by including boron oxide.

Description

산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법Manufacturing method of silicon anode material for lithium-ion secondary battery using boron oxide
본 발명은 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법에 관한 것으로, 더욱 자세하게는 폐실리콘 커프(Silicon kerf)로 형성된 판상의 실리콘을 사용하여 음극재의 단가를 낮출 수 있을 뿐만 아니라 산화붕소를 적용하여 초기 용량과 수명 성능을 향상시킨 실리콘 음극재를 제조할 수 있는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법에 관한 것이다. The present invention relates to a method of manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied. More specifically, by using plate-shaped silicon formed from a waste silicon kerf, not only can the unit cost of the anode material be lowered, but also boron oxide can be used. This relates to a method of manufacturing a silicon anode material for a lithium-ion secondary battery using boron oxide, which can produce a silicon anode material with improved initial capacity and lifespan performance.
일반적으로 리튬이온이차전지의 음극활물질은 흑연(Graphite)을 사용해왔다. 흑연은 이론용량 372mAh/g의 리튬이온 충전용량을 가지며, 실제는 360mAh/g의 용량을 나타내는 소재로 층구조를 이루는데 리튬이 층간에 삽입되어 충전되는 메커니즘을 가져왔다.Generally, graphite has been used as the negative electrode active material for lithium-ion secondary batteries. Graphite has a theoretical capacity of 372 mAh/g of lithium ion charging capacity, and in reality, it is a material with a capacity of 360 mAh/g and has a layered structure, with a mechanism in which lithium is inserted between layers and charged.
한편, 흑연보다 큰용량을 가진 음극재용 리튬이온 저장물질로 실리콘(Silicon)이 있다. 실리콘은 이론용량 4200mAh/g을 가진 물질이다. 하지만 4200mAh/g까지 충전되면서 실리콘 하나에 리튬이온 4개가 결합하게 되어 부피가 3배 이상 팽창하게 된다. 부피가 팽창된 실리콘은 리튬이 빠져나가면 원래 상태로 복귀되지 못하고 크랙이 발생하고, 미세한 나노입자로 분리되어 상당수가 전해질 또는 전해액과 전기적 연결이 끊어져서 다시 리튬을 충전할 수 없게 된다. 이런 이유로 실리콘 음극활물질은 충방전 수명이 짧아 흑연을 대체하는 음극활물질로 사용되지 못 해왔다.Meanwhile, silicon is a lithium ion storage material for anode materials that has a larger capacity than graphite. Silicon is a material with a theoretical capacity of 4200mAh/g. However, when charged to 4200 mAh/g, four lithium ions are combined with one silicon, causing the volume to expand more than three times. Silicon, which has expanded in volume, cannot return to its original state when lithium escapes, cracks occur, and is separated into fine nanoparticles, many of which are electrically disconnected from the electrolyte or electrolyte solution, making it impossible to recharge lithium. For this reason, silicon anode active material has a short charge/discharge life and has not been used as an anode active material to replace graphite.
실리콘 음극활물질의 충방전에 의한 크랙을 막거나 크랙이 발생하지 않을 더 작은 사이즈로 만들기 위한 기술적 개선이 많이 시도되었으나 성공적이지 못했다.Many technological improvements have been attempted to prevent cracks caused by charging and discharging of silicon anode active materials or to make them smaller to prevent cracks from occurring, but they have not been successful.
음극활물질로 사용하는 실리콘은 순도 99.9% 이상의 금속 실리콘을 주로 그 원료로 해왔다. 나노사이즈의 실리콘을 사용하면 리튬 충방전에 의한 크랙이 적어지는 것을 발견한 이래로 나노실리콘을 만들기 위한 노력이 많이 이루어져왔다.Silicon used as a negative electrode active material is mainly made of metallic silicon with a purity of 99.9% or higher. Since it was discovered that cracks caused by lithium charging and discharging are reduced when nano-sized silicon is used, much effort has been made to create nano-silicon.
구체적으로, 플라즈마를 써서 마이크로 입자를 분해해서 나노사이즈로 재결합시키는 방법, 실리콘을 작은 로드로 만들어 대전류를 흘려 용액 중에서 폭발적으로 기화시켜서 나노사이즈로 만드는 방법, 실란가스나 액체로 녹여서 열분해시킨 뒤, 나노사이즈로 재결합시키는 방법 등이다.Specifically, a method of using plasma to decompose micro particles and recombine them into nano size, a method of making silicon into a small rod and explosively vaporizing it in a solution by passing a large current to make it into nano size, melting it with silane gas or liquid and thermally decomposing it, and then making it into nano size. How to recombine by size, etc.
본 발명에서는 태양전지 산업 또는 반도체 산업에서 실리콘 웨이퍼를 얻기 위해 금속 실리콘 덩어리를 얇게 자르는 과정에서 발생하는 폐실리콘 커프(Silicon kerf)를 이용한다. 여기서, 폐실리콘 커프는 태양전지 산업 또는 반도체 산업에서 사용하는 99.9999999% ~ 99.999999999%의 순도를 갖고 있는 고순도 실리콘이며, 와이어 형태의 톱을 사용하므로 나노 두께를 가진 판상의 물질로 떨어져 나온다. 이와 같은 고순도의 판상 실리콘은 좋은 리튬이차전지용 음극활물질의 후보물질이 된다.In the present invention, waste silicon kerf (silicon kerf) generated in the process of cutting a lump of metal silicon into thin pieces to obtain a silicon wafer in the solar cell industry or semiconductor industry is used. Here, the waste silicon cuff is high-purity silicon with a purity of 99.9999999% to 99.999999999% used in the solar cell industry or semiconductor industry, and by using a wire-shaped saw, it comes off as a nano-thick plate-shaped material. Such high-purity plate-shaped silicon is a good candidate for anode active material for lithium secondary batteries.
종래기술로는 대한민국 등록특허공보 제10-1847235호 “리튬이온 이차전지 음극용 흑연 재료 및 그 제조 방법, 리튬이온 이차전지”가 기재되어 있다.As a prior art, Republic of Korea Patent Publication No. 10-1847235, “Graphite material for negative electrode of lithium ion secondary battery and manufacturing method thereof, lithium ion secondary battery” is described.
따라서 본 발명은 이와 같은 종래의 문제점을 개선하기 위해 제안된 것으로, 폐실리콘 커프(Silicon kerf)로 형성된 판상의 실리콘을 사용하여 음극재의 단가를 낮출 수 있을 뿐만 아니라 산화붕소를 적용하여 초기 용량과 수명 성능을 향상시킨 실리콘 음극재를 제조할 수 있는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법을 제공하는데 목적이 있다.Therefore, the present invention was proposed to improve this conventional problem. By using plate-shaped silicon formed from a waste silicon kerf, the unit cost of the anode material can be lowered, and by applying boron oxide, the initial capacity and lifespan can be improved. The purpose is to provide a method for manufacturing silicon anode materials for lithium-ion secondary batteries using boron oxide, which can produce silicon anode materials with improved performance.
상기 과제를 해결하기 위하여, 본 발명의 실시예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법은 폐실리콘 커프(Silicon kerf)로 형성된 판상 실리콘을 해쇄하여 0.1 내지 0.4g/㎤의 겉보기 밀도를 가지도록 만드는 1차 해쇄단계; 상기 판상 실리콘 입자의 표면을 산화시켜 산화막이 형성된 실리콘 산화물을 만드는 산화단계; 상기 실리콘 산화물의 표면에 산화붕소를 코팅하여 산화붕소 코팅막을 형성하는 산화붕소코팅단계 및 상기 산화붕소 코팅막의 표면을 전도성 카본으로 코팅하여 카본 코팅막이 형성된 판상 실리콘 복합체를 만드는 카본코팅단계를 포함할 수 있다. In order to solve the above problem, the method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention is to crush the plate-shaped silicon formed from a waste silicon kerf to an apparent particle size of 0.1 to 0.4 g/cm3. First disintegration step to create density; An oxidation step of oxidizing the surface of the plate-shaped silicon particles to form silicon oxide with an oxide film; It may include a boron oxide coating step of coating boron oxide on the surface of the silicon oxide to form a boron oxide coating film, and a carbon coating step of coating the surface of the boron oxide coating film with conductive carbon to form a plate-shaped silicon composite with a carbon coating film. there is.
또한, 상기 1차 해쇄단계 이전에, 상기 판상 실리콘을 습식밀링하고 건조하여 판상 실리콘 입자의 형태로 만드는 전처리단계를 더 포함할 수 있다. In addition, before the first disintegration step, a pretreatment step of wet milling and drying the plate-shaped silicon to form plate-shaped silicon particles may be further included.
또한, 상기 산화붕소코팅단계 이후에, 상기 산화붕소 코팅막이 형성된 실리콘 산화물을 해쇄하는 2차 해쇄단계를 더 포함할 수 있다. In addition, after the boron oxide coating step, a secondary disintegration step of disintegrating the silicon oxide on which the boron oxide coating film is formed may be further included.
또한, 상기 카본코팅단계 이후에, 상기 판상 실리콘 복합체와 흑연을 혼합하여 혼합물을 형성하는 혼합단계를 더 포함할 수 있다. In addition, after the carbon coating step, a mixing step of mixing the plate-shaped silicon composite and graphite to form a mixture may be further included.
또한, 상기 판상 실리콘은, 평균 두께가 10 내지 100㎚, 평균 길이가 10㎛ 이하로 형성된 것을 특징으로 한다. In addition, the plate-shaped silicon is characterized in that it is formed with an average thickness of 10 to 100 nm and an average length of 10 μm or less.
또한, 상기 산화단계는, 상기 실리콘 산화막의 평균 두께가 2 내지 10㎚로 형성되는 것을 특징으로 한다. Additionally, the oxidation step is characterized in that the silicon oxide film is formed with an average thickness of 2 to 10 nm.
또한, 상기 산화단계는, 상기 판상 실리콘 입자에 산화제를 투입하고 700 내지 1,100℃로 가열하는 것을 특징으로 한다. Additionally, the oxidation step is characterized in that an oxidizing agent is added to the plate-shaped silicon particles and heated to 700 to 1,100°C.
또한, 상기 산화붕소코팅단계는, 상기 실리콘 산화물에 붕산 수용액을 투입하고 550 내지 700℃로 가열하는 것을 특징으로 한다. Additionally, the boron oxide coating step is characterized by adding an aqueous boric acid solution to the silicon oxide and heating it to 550 to 700°C.
또한, 상기 카본코팅단계는, 상기 카본 코팅막의 평균 두께가 3 내지 20㎚로 형성되는 것을 특징으로 한다. In addition, the carbon coating step is characterized in that the average thickness of the carbon coating film is formed to be 3 to 20 nm.
또한, 상기 카본코팅단계는, 상기 산화붕소코팅단계를 마친 상기 실리콘 산화물에 탄화수소가스, 액화천연가스 및 액화석유가스 중 하나를 선택하여 투입하고, 750 내지 1000℃에서 열분해시키는 것을 특징으로 한다. In addition, the carbon coating step is characterized in that one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas is selected and added to the silicon oxide that has completed the boron oxide coating step, and thermally decomposed at 750 to 1000 ° C.
본 발명의 실시 예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법은 폐실리콘 커프(Silicon kerf)로 형성된 판상의 실리콘을 사용하여 음극재의 단가를 낮출 수 있다. The method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention can lower the unit cost of the anode material by using plate-shaped silicon formed from a waste silicon kerf.
또한, 판상의 흑연과 복합화되어 충진율이 우수한 실리콘 음극재를 제조할 수 있다.In addition, it is possible to manufacture a silicon anode material with an excellent filling ratio by complexing it with plate-shaped graphite.
또한, 실리콘 음극재의 성능을 올려 동일 부피 대비 더 많은 리튬을 충전할 수 있다. Additionally, by increasing the performance of the silicon anode material, more lithium can be charged compared to the same volume.
또한, 산화붕소를 적용하여 초기 용량과 수명 성능이 향상된 실리콘 음극재를 제조할 수 있다. In addition, by applying boron oxide, a silicon anode material with improved initial capacity and lifespan performance can be manufactured.
또한, 위에서 언급된 본 발명의 실시 예에 따른 효과는 기재된 내용에만 한정되지 않고, 명세서 및 도면으로부터 예측 가능한 모든 효과를 더 포함할 수 있다.In addition, the effects according to the embodiments of the present invention mentioned above are not limited to the contents described, and may further include all effects predictable from the specification and drawings.
도 1은 본 발명의 실시예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법의 순서도.Figure 1 is a flow chart of a method for manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied according to an embodiment of the present invention.
도 2는 도 1에 전처리단계, 2차 해쇄단계 및 혼합단계가 더 포함된 순서도.Figure 2 is a flow chart of Figure 1 further including a pretreatment step, a secondary disintegration step, and a mixing step.
도 3은 본 발명의 실시예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법에 사용되는 판상 실리콘의 SEM 사진.Figure 3 is an SEM photo of plate-shaped silicon used in the method of manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention.
도 4는 도 3의 판상 실리콘 모습을 나타낸 예시도.Figure 4 is an example diagram showing the appearance of the plate-shaped silicon of Figure 3.
도 5는 도 2의 전처리단계에서 형성된 판상 실리콘 입자의 모습을 나타낸 예시도.Figure 5 is an exemplary diagram showing the appearance of plate-shaped silicon particles formed in the pretreatment step of Figure 2.
도 6는 도 2의 산화단계에서 형성된 실리콘 산화물의 모습을 나타낸 예시도.Figure 6 is an exemplary diagram showing the appearance of silicon oxide formed in the oxidation step of Figure 2.
도 7a 및 도 7b는 도 6의 실리콘 산화물의 TEM 사진.FIGS. 7A and 7B are TEM images of the silicon oxide of FIG. 6.
도 8은 도 2의 산화붕소코팅단계에서 실리콘 산화물에 산화붕소가 부분적으로 코팅된 모습을 나타낸 예시도. Figure 8 is an example diagram showing boron oxide partially coated on silicon oxide in the boron oxide coating step of Figure 2.
도 9는 도 2의 카본코팅단계에서 형성된 판상 실리콘 복합체의 모습을 나타낸 예시도. Figure 9 is an exemplary diagram showing the appearance of a plate-shaped silicon composite formed in the carbon coating step of Figure 2.
도 10은 도 9의 판상 실리콘 복합체의 TEM 사진.Figure 10 is a TEM photo of the plate-shaped silicon composite of Figure 9.
도 11은 도 2의 혼합단계에서 형성된 혼합물의 모습을 나타낸 예시도.Figure 11 is an exemplary view showing the mixture formed in the mixing step of Figure 2.
도 12은 도 2의 혼합단계에서 형성된 다른 형태의 혼합물의 모습을 나타낸 예시도.Figure 12 is an exemplary view showing another type of mixture formed in the mixing step of Figure 2.
도 13은 비교예 1의 Half cell 충방전 시험 결과 그래프.Figure 13 is a graph of the half cell charge/discharge test results of Comparative Example 1.
도 14는 비교예 2의 Half cell 충방전 시험 결과 그래프.Figure 14 is a graph of the half cell charge/discharge test results of Comparative Example 2.
도 15는 비교예 3의 Half cell 충방전 시험 결과 그래프.Figure 15 is a graph of the half cell charge/discharge test results of Comparative Example 3.
도 16은 실시예 1의 Half cell 충방전 시험 결과 그래프.Figure 16 is a graph of the half cell charge/discharge test results of Example 1.
도 17은 실시예 2의 Half cell 충방전 시험 결과 그래프.Figure 17 is a graph of the half cell charge/discharge test results of Example 2.
본 발명의 실시예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법은 폐실리콘 커프(Silicon kerf)로 형성된 판상 실리콘을 해쇄하여 0.1 내지 0.4g/㎤의 겉보기 밀도를 가지도록 만드는 1차 해쇄단계; 상기 판상 실리콘 입자의 표면을 산화시켜 산화막이 형성된 실리콘 산화물을 만드는 산화단계; 상기 실리콘 산화물의 표면에 산화붕소를 코팅하여 산화붕소 코팅막을 형성하는 산화붕소코팅단계 및 상기 산화붕소 코팅막의 표면을 전도성 카본으로 코팅하여 카본 코팅막이 형성된 판상 실리콘 복합체를 만드는 카본코팅단계를 포함할 수 있다.The method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention is a first step of disintegrating plate-shaped silicon formed from a waste silicon kerf to have an apparent density of 0.1 to 0.4 g/cm3. disintegration stage; An oxidation step of oxidizing the surface of the plate-shaped silicon particles to form silicon oxide with an oxide film; It may include a boron oxide coating step of coating boron oxide on the surface of the silicon oxide to form a boron oxide coating film, and a carbon coating step of coating the surface of the boron oxide coating film with conductive carbon to form a plate-shaped silicon composite with a carbon coating film. there is.
이하, 도면을 참조한 본 발명의 설명은 특정한 실시 형태에 대해 한정되지 않으며, 다양한 변환을 가할 수 있고 여러 가지 실시예를 가질 수 있다. 또한, 이하에서 설명하는 내용은 본 발명의 사상 및 기술 범위에 포함되는 모든 변환, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.Hereinafter, the description of the present invention with reference to the drawings is not limited to specific embodiments, and various changes may be made and various embodiments may be possible. In addition, the content described below should be understood to include all conversions, equivalents, and substitutes included in the spirit and technical scope of the present invention.
이하의 설명에서 제1, 제2 등의 용어는 다양한 구성요소들을 설명하는데 사용되는 용어로서, 그 자체에 의미가 한정되지 아니하며, 하나의 구성요소를 다른 구성요소로부터 구별하는 목적으로만 사용된다.In the following description, the terms first, second, etc. are terms used to describe various components, and their meaning is not limited, and is used only for the purpose of distinguishing one component from other components.
본 명세서 전체에 걸쳐 사용되는 동일한 참조번호는 동일한 구성요소를 나타낸다.Like reference numerals used throughout this specification refer to like elements.
본 발명에서 사용되는 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 또한, 이하에서 기재되는 "포함하다", "구비하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것으로 해석되어야 하며, 하나 또는 그 이상의 다른 특징들이나, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.As used herein, singular expressions include plural expressions, unless the context clearly dictates otherwise. In addition, terms such as “comprise,” “provide,” or “have” used below are intended to designate the presence of features, numbers, steps, operations, components, parts, or a combination thereof described in the specification. It should be construed and understood as not excluding in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.
이하, 본 발명의 실시예를 첨부한 도 1 내지 도 17을 참조하여 상세히 설명하기로 한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying FIGS. 1 to 17.
도 1은 본 발명의 실시예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법의 순서도이고, 도 2는 도 1에 전처리단계, 2차 해쇄단계 및 혼합단계가 더 포함된 순서도이고, 도 3은 본 발명의 실시예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법에 사용되는 판상 실리콘의 SEM 사진이고, 도 4는 도 3의 판상 실리콘 모습을 나타낸 예시도이고, 도 5는 도 2의 전처리단계에서 형성된 판상 실리콘 입자의 모습을 나타낸 예시도이고, 도 6는 도 2의 산화단계에서 형성된 실리콘 산화물의 모습을 나타낸 예시도이고, 도 7a 및 도 7b는 도 6의 실리콘 산화물의 TEM 사진이고, 도 8은 도 2의 산화붕소코팅단계에서 실리콘 산화물에 산화붕소가 부분적으로 코팅된 모습을 나타낸 예시도이고, 도 9는 도 2의 카본코팅단계에서 형성된 판상 실리콘 복합체의 모습을 나타낸 예시도이고, 도 10은 도 9의 판상 실리콘 복합체의 TEM 사진이고, 도 11은 도 2의 혼합단계에서 형성된 혼합물의 모습을 나타낸 예시도이며, 도 12은 도 2의 혼합단계에서 형성된 다른 형태의 혼합물의 모습을 나타낸 예시도이다.Figure 1 is a flowchart of a method for manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied according to an embodiment of the present invention, and Figure 2 is a flowchart further including a pretreatment step, a secondary disintegration step, and a mixing step in Figure 1, Figure 3 is an SEM photograph of plate-shaped silicon used in the method of manufacturing a silicon anode material for lithium ion secondary batteries to which boron oxide is applied according to an embodiment of the present invention, Figure 4 is an exemplary view showing the shape of plate-shaped silicon in Figure 3, and Figure 5 is an exemplary diagram showing the appearance of plate-shaped silicon particles formed in the pretreatment step of FIG. 2, FIG. 6 is an exemplary diagram showing the appearance of silicon oxide formed in the oxidation step of FIG. 2, and FIGS. 7A and 7B are the silicon oxide of FIG. 6. is a TEM photo, and Figure 8 is an example diagram showing boron oxide partially coated on silicon oxide in the boron oxide coating step of Figure 2, and Figure 9 is a view of the plate-shaped silicon composite formed in the carbon coating step of Figure 2. Figure 10 is a TEM photo of the plate-shaped silicon composite of Figure 9, Figure 11 is an example showing the mixture formed in the mixing step of Figure 2, and Figure 12 is another shape formed in the mixing step of Figure 2. This is an example diagram showing the appearance of a mixture.
본 발명은 폐실리콘 커프(Silicon kerf)로 형성된 판상의 실리콘을 사용하여 음극재의 단가를 낮출 수 있을 뿐만 아니라 산화붕소를 적용하여 초기 용량과 수명 성능을 향상시킨 실리콘 음극재를 제조할 수 있는 리튬이온이차전지용 실리콘 음극재 제조방법에 관한 것이다.The present invention not only lowers the unit cost of the anode material by using plate-shaped silicon formed from a waste silicon kerf, but also uses boron oxide to produce a silicon anode material with improved initial capacity and lifespan performance. It relates to a method of manufacturing silicon anode materials for secondary batteries.
도 1을 참조하면, 본 발명의 실시예에 따른 산화붕소를 적용한 리튬이온이차전지용 실리콘 음극재 제조방법은 1차 해쇄단계(S10), 산화단계(S20), 산화붕소코팅단계(S30) 및 카본코팅단계(S40)를 포함할 수 있다. Referring to Figure 1, the method for manufacturing a silicon anode material for a lithium ion secondary battery using boron oxide according to an embodiment of the present invention includes a first disintegration step (S10), an oxidation step (S20), a boron oxide coating step (S30), and a carbon It may include a coating step (S40).
1차 해쇄단계(S10)는 폐실리콘 커프(Silicon kerf)로 형성된 판상 실리콘(10)을 해쇄하여 0.1 내지 0.4g/㎤의 겉보기 밀도를 가지도록 할 수 있다.In the first disintegration step (S10), the plate-shaped silicon 10 formed of a waste silicon kerf is disintegrated to have an apparent density of 0.1 to 0.4 g/cm3.
이는 후공정에서 기체와의 용이한 반응을 위한 것으로, 판상 실리콘(10)을 해쇄하여 입자간의 공간을 형성할 수 있는 것이다. 이와 같이 판상 실리콘(10)의 입자간의 평균거리가 늘어남에 따라 후공정인 산화단계(S20)에서 산화막(31)이 균일하게 형성되도록 할 수 있다. This is for easy reaction with gas in the post-process, and the plate-shaped silicon 10 can be disintegrated to form spaces between particles. As the average distance between particles of the plate-shaped silicon 10 increases in this way, the oxide film 31 can be formed uniformly in the oxidation step (S20), which is a post-process.
여기서, 판상 실리콘(10)은 도 3 및 도 4와 같이, 판형태로 형성된 분말일 수 있다. 판상 실리콘은 태양전지 또는 반도체용 실리콘 잉곳(Ingot)을 얇게 슬라이싱(Slicing)하는 과정에서 발생하는 폐실리콘 커프(절삭미분)로 형성될 수 있다. Here, the plate-shaped silicon 10 may be a powder formed in a plate shape, as shown in FIGS. 3 and 4. Plate-shaped silicon can be formed from waste silicon cuffs (cutting fines) generated during the process of thinly slicing a silicon ingot for solar cells or semiconductors.
실리콘 잉곳 절삭 방법은 일반적으로 3 내지 4 종류의 방법이 있으며, 모든 방법에는 분급, 세척, 침전 및 건조 단계를 거쳐 폐실리콘 커프를 얻을 수 있다. 폐실리콘 커프는 높은 두께 균일도를 가지는 폐실리콘 커프를 얻기위해, 다이아몬드 와이어쏘(Diamond wire saw)를 통해 만들어진 것을 사용하는 게 바람직하나, 이에 한정하지는 않는다. There are generally 3 to 4 types of silicon ingot cutting methods, and in all methods, a waste silicon cuff can be obtained through classification, washing, precipitation, and drying steps. In order to obtain a waste silicone cuff with high thickness uniformity, it is preferable to use a waste silicone cuff made through a diamond wire saw, but is not limited to this.
구체적으로, 다이어몬드 와이어쏘는 50㎛ 내외의 피아노선이라는 탄소강 와이어 표면에 다이아몬드 입자가 랜덤하게 박힌 것으로 물 또는 디에틸렌글리콜 성분을 윤활제로 하여 실리콘 잉곳을 자르는 방식이다. 실리콘 잉곳에는 단결정 잉곳과 다결정 잉곳이 있으며, 모든 절삭미분이 본 발명의 판상 실리콘(10)으로 적합하다는 장점이 있다. Specifically, a diamond wire saw is a method of cutting silicon ingots using water or diethylene glycol as a lubricant with diamond particles randomly embedded on the surface of a carbon steel wire called a piano wire of about 50㎛. Silicon ingots include single crystal ingots and polycrystalline ingots, and have the advantage that all cutting fines are suitable for the plate-shaped silicon (10) of the present invention.
폐실리콘 커프(Silicon kerf)로 형성된 판상 실리콘(10)은 평균 두께가 10 내지 100㎚, 평균 길이가 10㎛ 이하로 형성될 수 있다. The plate-shaped silicon 10 formed of a waste silicon kerf may be formed to have an average thickness of 10 to 100 nm and an average length of 10 μm or less.
여기서 판상 실리콘(10)의 평균 두께가 10nm 미만일 경우 산화막(31) 형성 시 잃는 부분이 너무 많아서 초기 용량이 처리 전 대비 60%도 되지 않을 수 있어 경제성이 크게 떨어질 수 있고, 평균 두께가 100mm 초과일 경우 산화막(31)의 비율이 20%도 되지 않는 입자가 많아져 수명성능 개선 효과가 크게 떨어질 수 있기 때문이다.Here, if the average thickness of the plate-shaped silicon 10 is less than 10 nm, too much is lost when forming the oxide film 31, and the initial capacity may be less than 60% of the pre-processing value, which may greatly reduce economic efficiency. If the average thickness exceeds 100 mm, This is because in the case where the ratio of the oxide film 31 is less than 20%, the number of particles increases, and the effect of improving lifespan performance may be greatly reduced.
또한 판상 실리콘(10)의 평균 길이가 10㎛ 초과일 경우 흑연 입자와의 혼합 시, 흑연(51)과 판상 실리콘 복합체(40) 입자 사이에 빈 공간이 많이 형성되어 동일 공간에 기공율이 커지고 충진율이 떨어져 동일 부피에서 방전용량이 크게 떨어질 수 있다.In addition, when the average length of the plate-shaped silicon 10 is more than 10㎛, when mixed with graphite particles, a lot of empty space is formed between the graphite 51 and the plate-shaped silicon composite 40 particles, so that the porosity in the same space increases and the filling rate increases. Otherwise, the discharge capacity may drop significantly in the same volume.
한편 판상 실리콘(10)은 절삭과정에서 강한 힘이 주어지면서 실리콘이 단결정에서 판상으로 떨어져 나오므로 휘고 말리게 되고, 많은 미세 단결정이 약하게 부착된 형태로 만들어질 수 있다. 이에, 판상 실리콘(10)은 파쇄 전처리를 통해 음극재에 더 적합한 상태로 만들어 질 수 있다.On the other hand, the plate-shaped silicon 10 may be bent and curled as strong force is applied during the cutting process and the silicon separates from the single crystal into a plate shape, and many fine single crystals may be weakly attached. Accordingly, the plate-shaped silicon 10 can be made into a state more suitable for an anode material through crushing pretreatment.
이를 위해, 도 2를 참조하면, 본 발명의 리튬이온이차전지용 실리콘 음극재 제조방법은 1차 해쇄단계(S10) 이전에 전처리단계(S5)를 포함할 수 있다. To this end, referring to FIG. 2, the method for manufacturing a silicon anode material for a lithium ion secondary battery of the present invention may include a pretreatment step (S5) before the first disintegration step (S10).
전처리단계(S5)는 1차 해쇄단계(S10) 이전에 판상 실리콘(10)을 습식밀링하고 건조하여 도 5와 같은 판상 실리콘 입자(2)를 만들 수 있다.The pretreatment step (S5) can produce plate-shaped silicon particles (2) as shown in FIG. 5 by wet milling and drying the plate-shaped silicon (10) before the first disintegration step (S10).
이때, 판상 실리콘(10)을 습식밀링하는 방식은 비드밀(볼밀), 초음파분산, 고압균질기분산 방식을 사용할 수 있다. At this time, the method of wet milling the plate-shaped silicon 10 may be a bead mill (ball mill), ultrasonic dispersion, or high-pressure homogenizer dispersion method.
먼저, 비드밀은 물 또는 유기용매에 판상 실리콘(10)을 5 ~ 30% 범위로 혼합한 후 지르코니아 또는 알루미나 용기에서 지르코니아 또는 알루미나 비드과 함께 회전하여 볼간의 마찰력과 충격력에 의해 파쇄하는 방식이다. 비드밀은 0.5 내지 3㎜직경의 비드를 사용하고, 용기의 직경 100㎜ 기준 1,000 내지 5000rpm으로 회전시켜 파쇄하는 것이 바람직하다. First, the bead mill mixes 5 to 30% of plate-shaped silicon (10) in water or an organic solvent, then rotates it with zirconia or alumina beads in a zirconia or alumina container and crushes it by friction and impact force between balls. The bead mill preferably uses beads with a diameter of 0.5 to 3 mm, and crushes them by rotating them at 1,000 to 5,000 rpm based on a container diameter of 100 mm.
비드밀 사용 시, 비드의 직경이 0.5mm 미만일 경우 충격력이 약해져 파쇄가 거의 되지 않을 수 있으며, 3mm 초과일 경우 비드의 숫자가 너무 적어져서 판상 실리콘(10)과 충돌 확률 저하로 파쇄 시간이 불필요하게 길어질 수 있다.When using a bead mill, if the bead diameter is less than 0.5mm, the impact force may be weak and crushing may not be possible, and if it is more than 3mm, the number of beads may be too small, reducing the probability of collision with the plate-shaped silicon (10), making crushing time unnecessary. It can be long.
또한 회전속도가 1000rpm 미만일 경우 저에너지로 파쇄에 필요한 에너지가 부족하여 파쇄가 거의 되지 않을 수 있고, 5000rpm 초과일 경우 과도한 고에너지로 비드 마모가 발생하고 불순물로 판상 실리콘(10)과 섞일 수 있다.In addition, if the rotation speed is less than 1000 rpm, the energy required for crushing may be low and the energy required for crushing may not be sufficient, and if it exceeds 5000 rpm, bead wear may occur due to excessive high energy and may be mixed with the plate-shaped silicon 10 as an impurity.
초음파분산은 초음파 진동자에 증폭혼과 진동혼을 부착하여 용액에 초음파 진동을 가하여 용액 내 알갱이를 분산 또는 파괴하는 방식이다. 초음파분산은 주파수 20 내지 35KHz, 진폭 20 내지 200um, 진동자 전력소비량 200W 이상 조건에서 판상 실리콘(10)을 처리하는 것이 바람직하다. 또한, 초음파분산은 물 또는 유기용매에 판상 실리콘(10)을 30% 이하 범위로 혼합한 후 진동자 다수가 일렬로 배치된 유로를 통과하면서 다수 진동자의 초음파진동을 받아서 파쇄가 가능하다.Ultrasonic dispersion is a method of attaching an amplifying horn and a vibrating horn to an ultrasonic vibrator and applying ultrasonic vibration to the solution to disperse or destroy the particles in the solution. It is desirable for ultrasonic dispersion to process the plate-shaped silicon 10 under the conditions of a frequency of 20 to 35 KHz, an amplitude of 20 to 200 μm, and a vibrator power consumption of 200 W or more. In addition, ultrasonic dispersion is possible by mixing plate-shaped silicon 10 in water or an organic solvent in a range of 30% or less and then receiving ultrasonic vibrations from a plurality of oscillators while passing through a passage in which a plurality of oscillators are arranged in a row.
이때, 진동자 전력소비량이 200W 미만일 경우 너무 낮은 에너지로 파쇄가 거의 되지 않을 수 있다. 또한 주파수가 20 KHz 미만일 경우 가청 주파파수를 넘기지 못해 운영이 용이하지 않을 수 있으며, 35 KHz 초과일 경우 진동자와 진동발생기의 내구성만 떨어뜨리고 파쇄와 작업환경 개선 효과는 없다.At this time, if the vibrator power consumption is less than 200W, the energy may be too low and almost no shredding may occur. In addition, if the frequency is less than 20 KHz, it may not be easy to operate because it cannot exceed the audible frequency, and if it is more than 35 KHz, it only reduces the durability of the vibrator and vibration generator and has no effect on shredding or improving the working environment.
또한 물 또는 유기용매에 판상 실리콘(10)이 30% 초과 범위로 혼합될 경우 점도가 너무 높아져 초음파 진동의 전달 범위가 넓게 이루어지지 않을 수 있기 때문이다.In addition, if the plate-shaped silicon 10 is mixed in water or an organic solvent in an amount exceeding 30%, the viscosity may become too high and the transmission range of ultrasonic vibration may not be wide.
고압균질기는 펌프를 사용하여 압력을 가하여 용액을 반대방향의 미세노즐로 통과시켜서 용액 내 분말을 분산시키거나 파괴하는 장치이다. 고압균질기는 미세노즐 통과 후 다이아몬드판에 충돌시키는 방법, 양방향으로 노즐을 통과시켜 용액끼리 충돌시키는 방법 등 충돌을 결합하여 사용하는 방식도 있다. 본 발명에는 물 또는 유기용매에 판상 실리콘(10)을 30% 이하 범위로 혼합한 후, 500bar 이상으로 가압하여 50 내지 200㎛의 미세 노즐을 통과시키고 다이아몬드판에 충돌 또는 상호 충돌하는 방식을 사용하는 것이 좋다.A high-pressure homogenizer is a device that disperses or destroys the powder in the solution by applying pressure using a pump to pass the solution through a fine nozzle in the opposite direction. There are also methods of using a high-pressure homogenizer that combine collision, such as a method of colliding with a diamond plate after passing through a fine nozzle, or a method of colliding solutions with each other by passing through a nozzle in both directions. In the present invention, a method of mixing plate-shaped silicon (10) in water or an organic solvent in the range of 30% or less, pressurizing at 500 bar or more, passing through a fine nozzle of 50 to 200㎛, and colliding or mutually colliding with a diamond plate is used. It's good.
이때, 물 또는 유기용매에 판상 실리콘(10)이 30% 초과 범위로 혼합되면, 점도가 너무 높아져 미세 노즐에 주입이 용이하지 않을 수 있다. 또한 압력이 500bar 미만일 경우 충돌에너지가 약해져 파쇄가 거의 되지 않을 수 있다.At this time, if the plate-shaped silicon 10 is mixed in water or an organic solvent in an amount exceeding 30%, the viscosity may become too high, making it difficult to inject into the fine nozzle. Additionally, if the pressure is less than 500 bar, the collision energy may be weakened and crushing may be almost impossible.
또한 미세노즐 직경이 50㎛ 미만일 경우 노즐 막힘이 자주 발생하여 공정 운영이 어려울 수 있고, 200㎛ 초과일 경우 충돌에너지가 너무 약해져서 파쇄가 거의 되지 않을 수 있다.Additionally, if the fine nozzle diameter is less than 50㎛, nozzle clogging may occur frequently, which may make process operation difficult. If it exceeds 200㎛, the collision energy may be so weak that crushing may hardly occur.
또한, 상기의 비드밀, 분산기 및 균질기 중 하나로부터 얻어진 파쇄된 판상 실리콘 입자(20)는 건조된 분말 상태로 회수되는 것이 바람직하다. 이때, 건조를 위한 장치는 수분 및 유기용매 기화 기능이 있는 다양한 장치의 사용이 가능하나, 스프레이 드라이어, 디스크 드라이어를 사용하는 것이 바람직하다.In addition, it is preferable that the crushed plate-shaped silicon particles 20 obtained from one of the above bead mills, dispersers, and homogenizers are recovered in a dried powder state. At this time, various drying devices capable of vaporizing moisture and organic solvents can be used, but it is preferable to use a spray dryer or a disk dryer.
여기서, 스프레이 드라이어는 파쇄된 판상 실리콘 입자(20)가 포함된 분산용액을 스프레이 노즐 또는 회전원판 노즐(Atomizer)을 통해 대기 중에 퍼트리고 뜨거워진 기체를 노즐 주변을 회전하도록 주입하여 용액이 비산된 상태에서 건조하는 장치로 낮은 겉보기 밀도를 가지는 건조 분말을 얻을 수 있는 장점이 있으나, 열효율이 좋지 않다.Here, the spray dryer spreads the dispersion solution containing the crushed plate-shaped silicon particles 20 into the atmosphere through a spray nozzle or a rotating disk nozzle (atomizer) and injects heated gas to rotate around the nozzle, causing the solution to scatter. There is an advantage in obtaining dry powder with a low apparent density using a drying device, but the thermal efficiency is not good.
디스크 드라이어는 열효율이 높으며, 가열된 회전디스크에 파쇄된 판상 실리콘 입자(20)가 포함된 분산용액을 조금씩 떨어뜨려서 건조시키고 건조 잔류물인 파쇄 및 건조된 판상 실리콘 입자(20)를 세라믹 나이프로 긁어서 회수하는 방식이다. 디스크 드라이어는 열 효율이 좋으나 높은 겉보기 밀도를 가지는 분말이 회수되는 단점이 있다.The disk dryer has high thermal efficiency, and the dispersion solution containing the crushed plate-shaped silicon particles (20) is dropped little by little onto a heated rotating disk, dried, and the dried residue, the crushed and dried plate-shaped silicon particles (20), is recovered by scraping with a ceramic knife. This is the way to do it. Disk dryers have good thermal efficiency, but have the disadvantage of recovering powder with a high apparent density.
상기와 같이 전처리단계(S1)를 통해 파쇄 및 건조된 판상 실리콘 입자(20)는 폐실리콘 커프에 있던 수분과 윤활제가 제거되었지만 후공정에서 기체와의 용이한 반응을 위해, 1차 해쇄단계(S10)에서 파쇄 및 건조된 판상 실리콘 입자(20)를 해쇄하여 입자간의 공간을 형성할 수 있는 것이다. Although the moisture and lubricant in the waste silicon cuff were removed from the plate-shaped silicon particles 20 that were crushed and dried through the pretreatment step (S1) as described above, for easy reaction with gas in the post-process, the first crushing step (S10) ), the crushed and dried plate-shaped silicon particles 20 can be pulverized to form spaces between the particles.
파쇄 및 건조된 판상 실리콘 입자(20)는 1 내지 2g/㎤의 겉보기 밀도를 가지는데 1차 해쇄단계(S10)에서 공기 하에서 3,000rpm으로 분쇄하는 것으로, 0.2 내지 0.4g/㎤의 겉보기 밀도를 가지는 판상 실리콘 입자(20)를 획득할 수 있다.The crushed and dried plate-shaped silicon particles 20 have an apparent density of 1 to 2 g/cm3, which is pulverized at 3,000 rpm under air in the first crushing step (S10), and have an apparent density of 0.2 to 0.4 g/cm3. Plate-shaped silicon particles 20 can be obtained.
이에 판상 실리콘 입자(20)는 입자간의 평균거리가 파쇄 및 건조된 판상 실리콘(10)보다 3 내지 10배 늘어날 수 있다. 따라서 1차 해쇄단계(S10)는 후공정인 산화단계(S20)에서 산화막(31)이 균일하게 형성되도록 할 수 있다. Accordingly, the average distance between particles of the plate-shaped silicon particles 20 may be 3 to 10 times greater than that of the crushed and dried plate-shaped silicon 10. Therefore, the first disintegration step (S10) can ensure that the oxide film 31 is formed uniformly in the subsequent oxidation step (S20).
또한, 1차 해쇄된 판상 실리콘(10) 또는 판상 실리콘 입자(20)는 비표면적이 10㎡/g 이상으로 높아 전해액 또는 전해질과 접촉면적이 크다. 이런 판상 실리콘의 특성은 높은 충방전 속도를 보장하지만, 빠른 충방전으로 인해 실리콘 파쇄가 빠르게 발생한다는 문제점이 있다. 이를 해결하기 위해 본 발명은 하기의 설명할 산화단계(S20)에서 판상 실리콘(10) 또는 판상 실리콘 입자(20)에 산화막(31)를 형성하여 충방전 속도를 떨어뜨렸다. In addition, the primarily pulverized plate-shaped silicon 10 or plate-shaped silicon particles 20 have a high specific surface area of 10 m 2 /g or more, and thus have a large contact area with the electrolyte solution or electrolyte. These characteristics of plate-shaped silicon ensure high charging and discharging speeds, but there is a problem in that silicon shattering occurs quickly due to rapid charging and discharging. To solve this problem, the present invention reduces the charge and discharge speed by forming an oxide film 31 on the plate-shaped silicon 10 or plate-shaped silicon particles 20 in the oxidation step (S20), which will be described below.
도 6을 참조하면, 산화단계(S20)는 판상 실리콘(10) 또는 판상 실리콘 입자(20)의 표면을 산화시켜 산화막(31)이 형성된 실리콘 산화물(30)을 만들 수 있다. 하기에서는 판상 실리콘 입자(20)를 기준으로 설명하기로 한다.Referring to FIG. 6, the oxidation step (S20) oxidizes the surface of the plate-shaped silicon 10 or the plate-shaped silicon particles 20 to create silicon oxide 30 on which the oxide film 31 is formed. In the following, the description will be based on the plate-shaped silicon particles 20.
산화단계(S20)는 판상 실리콘 입자(20)의 표면의 자연적으로 형성되어있는 자연 산화막에 추가로 산화시켜 산화막을 두껍게 형성되도록 할 수 있다. The oxidation step (S20) may be performed by additionally oxidizing the naturally formed oxide film on the surface of the plate-shaped silicon particle 20 to form a thick oxide film.
이때, 산화막(31)은 비정질 상태로 형성되고, 산화막(31)에 리튬이 접근할 경우 산화막(31) 틈새에 리튬이 충진되면서 산화막(31)을 관통하는 전지전도성 라인이 형성될 수 있다. 산화막(31)은 판상 실리콘 입자(20)에 전해액 또는 전해질의 리튬이 천천히 확산되어 들어가도록 할 수 있다. 이에, 본 발명의 제조방법으로 제조된 실리콘 음극재는 산화막(31)을 통해 리튬과 판상 실리콘 입자(20)의 결합속도를 낮춤으로써, 충전용량은 기존 실리콘보다 다소 낮지만 충방전 수명은 극적으로 늘어날 수 있다. At this time, the oxide film 31 is formed in an amorphous state, and when lithium approaches the oxide film 31, the gap between the oxide films 31 is filled with lithium and a battery conductive line penetrating the oxide film 31 may be formed. The oxide film 31 can allow the electrolyte solution or lithium in the electrolyte to slowly diffuse into the plate-shaped silicon particles 20. Accordingly, the silicon anode material manufactured by the manufacturing method of the present invention lowers the bonding speed between lithium and the plate-shaped silicon particles 20 through the oxide film 31, so the charging capacity is somewhat lower than that of existing silicon, but the charge and discharge life is dramatically increased. You can.
산화단계(S20)는 로타리킬른(Rotary kiln)을 사용하여 판상 실리콘 입자(20)에 산화제를 투입하고 700 내지 1,100℃로 가열할 수 있다. In the oxidation step (S20), an oxidizing agent may be added to the plate-shaped silicon particles 20 using a rotary kiln and heated to 700 to 1,100°C.
이때, 가열온도가 700℃ 미만일 경우, 산화막(31)의 형성 속도가 너무 느려져서 반응시간이 과도하게 길어짐에 따라 산화막(31)이 전체적으로 형성되지 않거나 원하는 두께로 형성하기 어려울 수 있고, 1,100℃ 초과일 경우, 과도한 온도로 판상 실리콘 입자(20)가 손상되거나 공정비용이 불필요하게 증대될 수 있어 비효율적일 수 있다. At this time, if the heating temperature is less than 700°C, the formation rate of the oxide film 31 becomes too slow and the reaction time becomes excessively long, so the oxide film 31 may not be formed entirely or may be difficult to form to the desired thickness. If the heating temperature exceeds 1,100°C, In this case, the plate-shaped silicon particles 20 may be damaged due to excessive temperature or the process cost may be unnecessarily increased, which may result in inefficiency.
여기서, 산화제는 산소, 물, 과산화수소 중 하나 이상을 사용할 수 있고, 산화제의 종류에 따라 가열 온도를 조절할 수 있다. Here, one or more of oxygen, water, and hydrogen peroxide can be used as the oxidizing agent, and the heating temperature can be adjusted depending on the type of oxidizing agent.
구체적으로, 산화제로 과산화수소를 사용할 경우, 700 내지 1,100℃로 가열할 수 있고, 산화제로 산소를 사용할 경우, 900 내지 1,100℃로 가열할 수 있다. Specifically, when hydrogen peroxide is used as an oxidizing agent, it can be heated to 700 to 1,100°C, and when oxygen is used as an oxidizing agent, it can be heated to 900 to 1,100°C.
여기서, 로타리킬른은 연속식 가열로를 사용하므로 열효율이 좋고 작업시간을 단축할 수 있다. 로타리킬른은 피처리물을 킬른 본체에 투입하기 위한 투입부, 가열하기 위한 킬른 본체를 구비하는 열처리부, 가열처리된 피처리물을 배출하는 배출부로 구성되어 있다. 로타리킬른은 피처리물이 계속 혼합하면서 이동하므로 균일하고 두께가 두꺼운 산화막(31)이 형성되며 입자 간의 산화막(31) 비율의 차이를 줄일 수 있다.Here, the rotary kiln uses a continuous heating furnace, so it has good thermal efficiency and can shorten working time. The rotary kiln is composed of an input part for feeding the material to be treated into the kiln main body, a heat treatment section equipped with a kiln body for heating, and a discharge portion for discharging the heat-treated material. In the rotary kiln, the objects to be treated are continuously mixed and moved, so a uniform and thick oxide film 31 is formed, and the difference in the ratio of the oxide film 31 between particles can be reduced.
산화단계(S20)에서 형성된 산화막(31)의 평균 두께는 2 내지 10㎚로 형성될 수 있다. 산화막(31)의 평균 두께가 2nm 미만일 경우 판상 실리콘 입자(20) 표면에 점 형태의 불균일한 산화막(31)이 형성될 수 있으며, 이에 판상 실리콘 입자(20) 표면에 산화되지 않은 부분이 점 형태의 산화막(31) 사이로 다수 발생하게 되어 균일한 산화막(31)이 주는 효과를 나타낼 수 없다. 즉, 수명 성능 향상 효과가 바람직하게 나타나지 않을 수 있다.The average thickness of the oxide film 31 formed in the oxidation step (S20) may be 2 to 10 nm. If the average thickness of the oxide film 31 is less than 2 nm, a non-uniform oxide film 31 in the form of a point may be formed on the surface of the plate-shaped silicon particle 20, and the unoxidized portion on the surface of the plate-shaped silicon particle 20 may be in the form of a point. Since a large number of oxides are generated between the oxide films 31, the effect provided by the uniform oxide film 31 cannot be achieved. In other words, the lifespan performance improvement effect may not be desired.
또한 산화막(31)이 10nm 초과일 경우 초기 방전용량 감소의 주요 이유인 비가역 용량이 30%이상으로 크게 늘어나 리튬 소모가 심해질 수 있다.Additionally, if the oxide film 31 exceeds 10 nm, the irreversible capacity, which is the main reason for the decrease in initial discharge capacity, increases significantly to more than 30%, which may increase lithium consumption.
도 7a 및 도 7b에서 관찰된 바와 같이, 산화단계(S20)를 통해 판상 실리콘 입자(20) 표면에 산화막(31)이 형성될 수 있다.As observed in FIGS. 7A and 7B, an oxide film 31 may be formed on the surface of the plate-shaped silicon particle 20 through the oxidation step (S20).
도 8을 참조하면, 산화붕소코팅단계(S30)는 실리콘 산화물(30)의 표면에 산화붕소를 코팅하여 산화붕소 코팅막(32)을 형성할 수 있다. Referring to FIG. 8, the boron oxide coating step (S30) may form a boron oxide coating film 32 by coating boron oxide on the surface of the silicon oxide 30.
산화붕소코팅단계(S30)는 산화막(31)이 초기 충전 때 리튬과 결합하고 방전 때 리튬을 내놓지 못해 초기 비가역이 늘어나는 단점을 개선하기 위한 것으로, 산화붕소를 코팅하여 산화붕소 코팅막(32)을 형성할 수 있다. The boron oxide coating step (S30) is to improve the disadvantage of increasing initial irreversibility because the oxide film 31 combines with lithium during initial charging and cannot release lithium during discharging, and forms a boron oxide coating film 32 by coating boron oxide. can do.
여기서, 산화붕소는 비교적 낮은 온도에서 결정질을 가지는 특성이 있어, 비결정질인 산화막(31)에 결정질을 부가할 수 있으며, 이를 통해 리튬을 소비하지 않으면서 산화막(31)과 리튬의 결합을 줄일 수 있다. 산화붕소는 리튬과 반응하지 않는 저렴한 물질이라는 장점도 있다.Here, boron oxide has the characteristic of being crystalline at a relatively low temperature, so crystalline quality can be added to the amorphous oxide film 31, and through this, the bond between the oxide film 31 and lithium can be reduced without consuming lithium. . Boron oxide also has the advantage of being an inexpensive material that does not react with lithium.
즉, 산화붕소코팅단계(S30)는 실리콘 산화물(30)의 표면에 산화붕소 코팅막(32)을 형성하여, 산화막(31)의 리튬과의 결합량을 감소시켜 초기 비가역이 늘어나지 않도록 하고, 초기 용량과 수명 성능을 향상시킬 수 있다.That is, the boron oxide coating step (S30) forms a boron oxide coating film 32 on the surface of the silicon oxide 30, thereby reducing the amount of bonding with lithium of the oxide film 31 to prevent initial irreversibility from increasing and initial capacity. and life performance can be improved.
산화붕소코팅단계(S30)는 산화붕소 코팅막(32)을 실리콘 산화물(30) 표면 전체에 코팅시키는 것이 아니라 부분적으로 형성시킬 수 있는데, 이는 붕산을 코팅하고 열분해하여 산화붕소 코팅막(32)을 형성하므로 불균일한 코팅막이 형성될 수 있는 것이다.In the boron oxide coating step (S30), the boron oxide coating film 32 can be formed partially rather than coating the entire surface of the silicon oxide 30. This is because boric acid is coated and thermally decomposed to form the boron oxide coating film 32. A non-uniform coating film may be formed.
산화붕소코팅단계(S30)는 산화단계(S20)를 마친 실리콘 산화물(30)을 붕산 수용액에 투입하여 분산시킨 뒤, 스프레이 드라이어, 디스크 드라이어 등의 건조기를 통해 건조시키고 분쇄기를 이용하여 0.1 내지 0.4g/㎤의 겉보기 밀도로 분쇄할 수 있다. 그 다음, 로타리킬른을 사용하여 550 내지 700℃로 가열하여, 붕산을 산화붕소로 변환시켜 산화붕소 코팅막(32)을 형성시킬 수 있다.In the boron oxide coating step (S30), the silicon oxide (30) that has completed the oxidation step (S20) is dispersed by adding it to an aqueous solution of boric acid, then dried through a dryer such as a spray dryer or disk dryer, and then reduced to 0.1 to 0.4 g using a grinder. It can be pulverized to an apparent density of /cm3. Next, the boric acid can be converted to boron oxide by heating to 550 to 700° C. using a rotary kiln to form the boron oxide coating film 32.
이때, 가열온도가 550℃ 미만일 경우 산화붕소가 모두 녹지 않아서 산화막(31)에 부착력이 저하될 수 있고, 700℃ 초과일 경우 녹아서 기화로 날아가는 양이 많아져 코팅 효과가 저하될 수 있다.At this time, if the heating temperature is less than 550°C, the boron oxide does not melt all and the adhesion to the oxide film 31 may decrease, and if the heating temperature exceeds 700°C, the amount that melts and flies away through vaporization increases, which may reduce the coating effect.
한편, 산화붕소코팅단계(S30)는 붕산이 산화붕소로 변환되는 과정에서 발열과정이 수반되어 입자간의 응집이 발생하므로, 분쇄기를 통해 입자간의 거리가 형성되도록 해쇄하는 것이다. 이때, 입자의 겉보기 밀도는 상기에서 기재한 바와 같이 0.1 내지 0.4g/㎤가 바람직하나, 이에 한정하지는 않는다. Meanwhile, in the boron oxide coating step (S30), the process of converting boric acid to boron oxide involves an exothermic process and agglomeration occurs between particles, so the particles are pulverized through a grinder to form a distance between them. At this time, the apparent density of the particles is preferably 0.1 to 0.4 g/cm3 as described above, but is not limited thereto.
도 9를 참조하면, 카본코팅단계(S40)는 실리콘 산화물(30)의 표면을 전도성 카본으로 코팅하여 카본 코팅막(41)이 형성된 판상 실리콘 복합체(40)를 만들 수 있다. 카본코팅단계(S40)는 실리콘 산화물(30)의 표면에 카본 코팅막(41)을 형성함으로써, 절연층인 산화막(31) 및 산화붕소 코팅막(32)에 전기전도성 및 원활한 전자흐름을 부여할 수 있다. Referring to FIG. 9, the carbon coating step (S40) may be performed by coating the surface of the silicon oxide 30 with conductive carbon to form a plate-shaped silicon composite 40 with a carbon coating film 41 formed thereon. The carbon coating step (S40) forms a carbon coating film 41 on the surface of the silicon oxide 30, thereby imparting electrical conductivity and smooth electron flow to the oxide film 31 and the boron oxide coating film 32, which are insulating layers. .
여기서, 카본 코팅막(41)은 기존의 리튬이온이차전지에서 흑연과 전해액(또는 전해질) 계면인 SEI(Solid electrolyte interface, 고체 전해질 계면)의 형성량과 형성관계를 유지시키는 역할을 하며, 소재 변화로 인해 전해액(또는 전해질)을 변경해야 하는 불편함을 없애 줄 수 있다. Here, the carbon coating film 41 serves to maintain the amount and formation relationship of SEI (solid electrolyte interface), which is the interface between graphite and electrolyte (or electrolyte) in existing lithium ion secondary batteries, and plays a role in maintaining the formation relationship due to material changes. This can eliminate the inconvenience of having to change the electrolyte (or electrolyte).
카본코팅단계(S40)는 로타리킬른 또는 킬른을 사용하여 실리콘 산화물(30)에 탄화수소가스, 액화천연가스 및 액화석유가스 중 하나를 선택하여 투입하고, 750 내지 1000℃에서 열분해시킬 수 있다. In the carbon coating step (S40), one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas can be selected and added to the silicon oxide 30 using a rotary kiln or kiln, and thermally decomposed at 750 to 1000 ° C.
여기서, 탄화수소가스는 카본과 수소 결합으로 이루어진 가스로, C2H2(아세틸린), C2H6(에탄), C2H4(에틸렌), CH4(메탄), C3H8(프로판), C4H10(부탄), C3H6(프로필렌), C4H8(부틸렌) 등이 사용될 수 있다. 탄화수소가스는 에탄올, 메탄올, 톨루엔 등과 같은 C, H, O로 이루어진 탄화수소 용액을 기화 및 열분해시켜 제조한 것을 사용할 수 있다. Here, hydrocarbon gas is a gas composed of carbon and hydrogen bonds, C 2 H 2 (acetylline), C 2 H 6 (ethane), C 2 H 4 (ethylene), CH 4 (methane), C 3 H 8 ( Propane), C 4 H 10 (butane), C 3 H 6 (propylene), C 4 H 8 (butylene), etc. may be used. Hydrocarbon gas can be produced by vaporizing and thermally decomposing a hydrocarbon solution consisting of C, H, and O, such as ethanol, methanol, and toluene.
카본코팅단계(S40)는 탄화수소가스로 에틸렌가스를 사용하여 실리콘 산화물(30)을 750 내지 800℃에서 열분해시키거나, 액화천연가스를 사용하여 실리콘 산화물(30)을 950 내지 1,000℃에서 열분해시켜 카본 코팅막(41)을 형성하는 것이 바람직하나, 이에 한정하지는 않는다.In the carbon coating step (S40), silicon oxide (30) is thermally decomposed at 750 to 800°C using ethylene gas as a hydrocarbon gas, or silicon oxide (30) is thermally decomposed at 950 to 1,000°C using liquefied natural gas to produce carbon. It is preferable to form a coating film 41, but it is not limited thereto.
에틸렌가스를 사용할 시, 온도가 750℃ 미만일 경우 분해율이 50%도 되지 않아 불필요하게 가스를 소모 시키게 되며, 800℃ 초과일 경우 분해 속도가 빨라져 카본 블랙이라는 불필요한 부산물을 다량으로 만들어 낼 수 있다.When using ethylene gas, if the temperature is less than 750℃, the decomposition rate is less than 50%, resulting in unnecessary gas consumption, and if the temperature is higher than 800℃, the decomposition speed increases and a large amount of unnecessary by-product called carbon black can be produced.
액화천연가스를 사용하는 경우 또한, 온도가 950℃ 미만일 경우 분해율이 50%도 되지 않아 불필요하게 가스를 소모 시키게 되며, 1000℃ 초과일 경우 분해 소도가 빨라져 카본 블랙이라는 불필요한 부산물을 다량으로 만들어 낼 수 있다.When using liquefied natural gas, if the temperature is less than 950℃, the decomposition rate is less than 50%, which results in unnecessary gas consumption. If it exceeds 1000℃, the decomposition rate is accelerated and a large amount of unnecessary by-products called carbon black can be produced. there is.
카본코팅단계(S40)는 카본 코팅막(41)의 평균 두께가 3 내지 20㎚로 형성될 수 있다.In the carbon coating step (S40), the carbon coating film 41 may be formed to have an average thickness of 3 to 20 nm.
이때, 카본 코팅막(41)의 평균 두께가 3nm 미만일 경우 실리콘 산화물(30)의 표면에 카본 코팅막(41)이 점 형태로 불균일하게 형성되어, 코팅이 안된 부분이 다수 발생하여 수명 향상 효과가 크지 않을 수 있으며, 20nm 초과일 경우 과도한 코팅으로 카본 코팅막(41) 내부에 공극이 많아져서 리튬이 공극을 채우고 다시 빠져나가지 않아 비가역 용량이 크게 늘어날 수 있다.At this time, if the average thickness of the carbon coating film 41 is less than 3 nm, the carbon coating film 41 is formed unevenly in the form of dots on the surface of the silicon oxide 30, resulting in many uncoated areas, which may not have a significant lifespan improvement effect. If it exceeds 20 nm, excessive coating increases the number of pores inside the carbon coating film 41, so lithium fills the pores and does not escape again, resulting in a significant increase in irreversible capacity.
도 10에서 확인된 바와 같이, 카본코팅단계(S40)를 통해 실리콘 산화물(30, 판상 실리콘 입자의 표면에 산화막이 형성된 형태) 표면에 카본 코팅막(41)이 형성될 수 있다.As confirmed in FIG. 10, a carbon coating film 41 may be formed on the surface of silicon oxide (30, in which an oxide film is formed on the surface of plate-shaped silicon particles) through the carbon coating step (S40).
도 2를 참조하면, 본 발명의 리튬이온이차전지용 실리콘 음극재 제조방법은 산화붕소코팅단계(S30) 이후에, 2차 해쇄단계(S35)를 더 포함할 수 있다. Referring to Figure 2, the method for manufacturing a silicon anode material for a lithium ion secondary battery of the present invention may further include a secondary disintegration step (S35) after the boron oxide coating step (S30).
2차 해쇄단계(S35)는 산화붕소코팅단계(S30) 이후에 응집되어 있는 실리콘 산화물(30)을 해쇄하여 저밀도화 시킬 수 있다. 2차 해쇄단계(S35)는 실리콘 산화물(30)을 반경 110 내지 130㎜, 3300 내지 3500rpm 핀밀에서 공기와 함께 분쇄할 수 있다. The second disintegration step (S35) can disintegrate the silicon oxide 30 that has been aggregated after the boron oxide coating step (S30) to reduce density. In the second crushing step (S35), the silicon oxide 30 can be pulverized with air in a pin mill with a radius of 110 to 130 mm and 3300 to 3500 rpm.
이러한 2차 해쇄단계(S35)는 응집된 실리콘 산화물(30)을 분리시키는 것으로, 1차 해쇄단계(S10)와 동일하게 입자가 0.1 내지 0.4g/㎤의 겉보기 밀도를 가지도록 할 수 있다. 이에, 2차 해쇄단계(S35)는 후공정인 산화붕소코팅단계(S30)에서 산화붕소 코팅막(32) 형성이 용이하도록 하며, 카본코팅단계(S40)에서 카본 코팅막(41)이 균일하게 형성되도록 할 수 있다. This second disintegration step (S35) separates the aggregated silicon oxide 30, and, like the first disintegration step (S10), the particles can have an apparent density of 0.1 to 0.4 g/cm3. Accordingly, the second disintegration step (S35) facilitates the formation of the boron oxide coating film 32 in the post-process boron oxide coating step (S30), and ensures that the carbon coating film 41 is formed uniformly in the carbon coating step (S40). can do.
또한, 본 발명의 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법은 카본코팅단계(S40) 이후에, 혼합단계(S50)를 더 포함할 수 있다. In addition, the method for manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide of the present invention is applied may further include a mixing step (S50) after the carbon coating step (S40).
혼합단계(S50)는 카본코팅단계(S40) 이후에 판상 실리콘 복합체(40)와 흑연(51)을 혼합하여 혼합물(50a,50b)을 형성할 수 있는데, 구형화 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재(50a) 또는 단순 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재(50b)를 형성할 수 있다. The mixing step (S50) may be performed by mixing the plate-shaped silicon composite 40 and graphite 51 after the carbon coating step (S40) to form mixtures 50a and 50b, for lithium ion secondary batteries to which spherical boron oxide is applied. A silicon anode material 50a or a silicon anode material 50b for a lithium ion secondary battery to which simple boron oxide is applied can be formed.
여기서, 흑연(51)은 판상 소재로, 구형화되어도 빈공간이 형성되어 있다. Here, the graphite 51 is a plate-shaped material, and even if it is spherical, an empty space is formed.
혼합단계(S50)는 흑연(51)의 빈공간에 판상 실리콘 복합체(40)가 채워지면서 리튬 결합시 팽창으로 인한 전극전체 팽창을 방지하고 수축으로 인한 전극과의 전기적 연결을 유지하도록 할 수 있다. 혼합단계(S50)로 형성된 혼합물(50a,50b)은 흑연(51)의 빈공간에 판상 실리콘 복합체(40)가 결합되는 형태로 리튬에 의해 팽창시 전극과 분리되는 것을 방지할 수 있다. 이때, 흑연(51)의 빈공간은 완충공간 역할을 하게 된다. In the mixing step (S50), the empty space of the graphite 51 is filled with the plate-shaped silicon composite 40, thereby preventing the entire electrode from expanding due to expansion when lithium is combined and maintaining an electrical connection with the electrode due to shrinkage. The mixture (50a, 50b) formed in the mixing step (S50) is a form in which the plate-shaped silicon composite (40) is bonded to the empty space of the graphite (51), and can prevent separation from the electrode when expanded by lithium. At this time, the empty space of the graphite 51 serves as a buffer space.
혼합단계(S50)는 흑연(51)을 구상화하는 과정에서 판상 실리콘 복합체(40)를 투입하는 방법이나, 구상화 또는 구형화 과정을 마친 흑연(51)과 판상 실리콘 복합체(40)를 혼합하는 방법이 있다. The mixing step (S50) is a method of adding the plate-shaped silicon composite 40 in the process of spheroidizing the graphite 51, or a method of mixing the graphite 51 and the plate-shaped silicon composite 40 that have completed the spheroidization or spheroidization process. there is.
구체적으로, 혼합단계(S50)로 흑연(51)을 구상화하는 과정에서 판상 실리콘 복합체(40)를 투입할 경우, 도 11에 도시한 바와 같이, 흑연(51)의 판 사이에 판상 실리콘 복합체(40)가 삽입되면서 구상화 또는 구형화된 흑연(51) 형태의 구형화 혼합물(50a)이 형성될 수 있다. 반면, 혼합단계(S50)로 구상화 또는 구형화 과정을 마친 흑연(51)과 판상 실리콘 복합체(40)를 혼합할 경우, 도 12에 도시한 바와 같이, 흑연(51) 사이에 판상 실리콘 복합체(40)가 배치된 형태의 단순 혼합물(50b)이 형성될 수 있다. Specifically, when adding the plate-shaped silicon composite 40 in the process of spheroidizing the graphite 51 in the mixing step (S50), as shown in FIG. 11, the plate-shaped silicon composite 40 is formed between the plates of the graphite 51. ) is inserted, a spheroidized mixture 50a in the form of spheroidized or spheroidized graphite 51 may be formed. On the other hand, when mixing the graphite 51 and the plate-shaped silicon composite 40 that have completed the spheroidization or spheronization process in the mixing step (S50), as shown in FIG. 12, the plate-shaped silicon composite 40 is formed between the graphite 51. ) A simple mixture 50b in the form of an arrangement may be formed.
이때, 흑연(51)은 구상화 또는 구형화과정을 거치는데, 이는 구형 흑연이 이방도가 낮아 전압 및 전류 분포의 균일성 유지에 유리하기 때문이다. 반면, 플레이크상의 흑연은 재료 자체의 비등방성으로 인해, 이후 용매나 바인더와 혼합 및 슬러리화하는 과정에서 유동성 저하로 공정성이 나빠지고, 소정 두께의 도포층 형성이 어려워 박리 현상 등의 문제점이 발생할 수 있다. 일반적으로, 구상화 공정은 기계적 회전운동에 의해 플레이크상 탄소재의 거친 부분들을 제거하고 입자 표면을 매끄럽게 가공하여 구형화할 수 있다.At this time, the graphite 51 undergoes a spheroidization or spheroidization process, because spherical graphite has a low anisotropy and is advantageous for maintaining uniformity of voltage and current distribution. On the other hand, due to the anisotropy of the material itself, flake-shaped graphite deteriorates the processability due to reduced fluidity during the subsequent mixing and slurry process with solvents or binders, and it is difficult to form a coating layer of a certain thickness, which can cause problems such as peeling. there is. In general, the spheroidization process removes the rough parts of the flake-shaped carbon material through mechanical rotation and smoothes the surface of the particle to make it spherical.
한편, 판상 실리콘 복합체(40)와 흑연(51)을 31 내지 10 : 90 내지 99의 중량비로 혼합할 수 있고, 보다 바람직하게는 5 : 95의 중량비로 혼합할 수 있다.Meanwhile, the plate-shaped silicon composite 40 and the graphite 51 can be mixed at a weight ratio of 31 to 10:90 to 99, and more preferably at a weight ratio of 5:95.
이때, 판상 실리콘 복합체(40)의 함량이 1중량% 보다 낮을 경우 흑연(51) 혼합에 따른 실리콘 음극재의 충전용량 증가 효과가 충전용량 편차 이내에 속하여 효과를 알기 어려우며, 10중량% 초과일 경우 실리콘 입자 수가 흑연(51) 입자 수보다 크게 많아져서 실리콘 입자와 흑연(51) 간 균일 분산 효과가 떨어질 수 있다.At this time, if the content of the plate-shaped silicon composite 40 is lower than 1% by weight, the effect of increasing the charging capacity of the silicon anode material due to the mixing of the graphite 51 falls within the charging capacity deviation, making it difficult to determine the effect, and if it exceeds 10% by weight, the silicon particles As the number becomes greater than the number of graphite 51 particles, the uniform dispersion effect between the silicon particles and the graphite 51 may be reduced.
상기에서 설명한 바와 같이, 본 발명의 실시 예에 따른 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법은 폐실리콘 커프(Silicon kerf)로 형성된 판상의 실리콘을 사용하여 음극재의 단가를 낮출 수 있다. As described above, the method for manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied according to an embodiment of the present invention uses plate-shaped silicon formed from a waste silicon kerf, which can lower the unit cost of the anode material.
또한, 판상의 흑연과 복합화되어 충진율이 우수한 실리콘 음극재를 제조할 수 있다.In addition, it is possible to manufacture a silicon anode material with an excellent filling ratio by complexing it with plate-shaped graphite.
또한, 실리콘 음극재의 성능을 올려 동일 부피 대비 더 많은 리튬을 충전할 수 있다. Additionally, by increasing the performance of the silicon anode material, more lithium can be charged compared to the same volume.
또한, 산화붕소를 적용하여 초기 용량과 수명 성능이 향상된 실리콘 음극재를 제조할 수 있다. In addition, by applying boron oxide, a silicon anode material with improved initial capacity and lifespan performance can be manufactured.
이하에서, 실시예를 들어 본 발명에 대하여 더욱 상세하게 설명할 것이나, 이들은 단지 본 발명의 바람직한 구현예를 예시하기 위한 것으로, 실시예가 본 발명의 범위를 제한하는 것은 아니다.Hereinafter, the present invention will be described in more detail through examples, but these are merely for illustrating preferred embodiments of the present invention, and the examples do not limit the scope of the present invention.
[실시예][Example]
[실시예 1][Example 1]
다결정 실리콘 잉곳을 직경 50㎛ 다이아몬드 와이오쏘로 물과 디에틸렌글리콜 혼합액으로 냉각, 윤활 및 절단과정을 거쳐 판상 실리콘 5% 혼합용액 5,000ml을 회수하였다. 분산용액을 스프레이 드라이어에서 15,000rpm으로 회전하는 아토마이저 원판에 분당 20ml 속도로 주입하여 140도에서 건조하여 판상 실리콘 입자를 얻었다. 반경 120㎜, 3400rpm 핀밀에서 공기와 함께 분쇄하여 저밀도의 판상 실리콘 입자를 만들었다. 상기 판상 실리콘 입자를 로타리킬른 800℃에서 10분간 체류시키면서, 질소로 과산화수소를 버블링하고 주입하여 산화시켰다. 판상 실리콘 입자는 검회색에서 진갈색으로 변화하면서 실리콘 산화물이 되었다. 상기 실리콘 산화물을 붕산 수용액에 3,000rpm 믹서를 사용하여 30분간 분산시킨 뒤, 스프레이 드라이어에서 15,000rpm으로 회전하는 아토마이저 원판에 분당 20ml 속도로 주입하여 140℃에서 건조하였다. 그 다음, 로타리킬른 700℃에서 10분간 체류시키면서 붕산을 분해시켜 실리콘 산화물에 부분적으로 산화붕소가 코팅되어 산화붕소 코팅막이 형성되도록 하였다. 상기 산화붕소 코팅막이 형성된 실리콘 산화물은 로타리킬른 800℃에서 10분간 체류시키면서 에틸렌 가스를 0.1M/min. 속도로 투입하여 표면에 카본 코팅막이 형성되도록 하여, 판상 실리콘 복합체를 만들었다. The polycrystalline silicon ingot was cooled, lubricated, and cut with a mixture of water and diethylene glycol using a 50㎛ diameter diamond wioso, and 5,000 ml of a 5% mixed solution of plate-shaped silicon was recovered. The dispersion solution was injected from a spray dryer into an atomizer disk rotating at 15,000 rpm at a rate of 20 ml per minute and dried at 140 degrees to obtain plate-shaped silicon particles. Low-density plate-shaped silicon particles were made by grinding with air in a pin mill with a radius of 120 mm and 3400 rpm. The plate-shaped silicon particles were oxidized by bubbling and injecting hydrogen peroxide with nitrogen while remaining in a rotary kiln at 800°C for 10 minutes. The plate-shaped silicon particles changed from black gray to dark brown and became silicon oxide. The silicon oxide was dispersed in an aqueous solution of boric acid for 30 minutes using a mixer at 3,000 rpm, and then injected into an atomizer disk rotating at 15,000 rpm in a spray dryer at a rate of 20 ml per minute and dried at 140°C. Next, boric acid was decomposed while remaining in a rotary kiln at 700°C for 10 minutes, and boron oxide was partially coated on the silicon oxide to form a boron oxide coating film. The silicon oxide on which the boron oxide coating film was formed was stored in a rotary kiln at 800°C for 10 minutes while exhaling ethylene gas at 0.1 M/min. It was added at a high rate to form a carbon coating film on the surface, creating a plate-shaped silicon composite.
제조된 판상 실리콘 복합체를 바인더, 도전재와 혼합하여 구리 호일에 도포하고 코인모양으로 타공하였다. 전지셀을 만들기 위해, 양극은 리튬호일을 코인모양으로 타공하여 사용하였고, 세퍼레이터와 전해액을 넣고 리튬이온전지 Half-cell로 조립하였다.The prepared plate-shaped silicon composite was mixed with a binder and a conductive material, applied to copper foil, and punched into a coin shape. To make a battery cell, a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
[실시예 2] [Example 2]
실시예 1에서 제조된 판상 실리콘 복합체와 구형화된 흑연을 5:95 무게비로 건식 볼밀에 투입하여 10초간 혼합하여 혼합물을 얻었다. 상기 혼합물을 사용하여 실시예 1과 동일하게 리튬이온전지 Half-cell로 제조하였다. The plate-shaped silicon composite prepared in Example 1 and the spherical graphite were added to a dry ball mill at a weight ratio of 5:95 and mixed for 10 seconds to obtain a mixture. A half-cell lithium ion battery was manufactured in the same manner as Example 1 using the above mixture.
[비교예 1][Comparative Example 1]
흑연, 바인더, 도전재와 혼합하여 구리 호일에 도포하고 코인모양으로 타공하였다. 전지셀을 만들기 위해, 양극은 리튬호일을 코인모양으로 타공하여 사용하였고, 세퍼레이터와 전해액을 넣고 리튬이온전지 Half-cell로 조립하였다.It was mixed with graphite, binder, and conductive material, applied to copper foil, and punched into a coin shape. To make a battery cell, a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
[비교예 2][Comparative Example 2]
다결정 실리콘 잉곳을 직경 50㎛ 다이아몬드 와이오쏘로 물과 디에틸렌글리콜 혼합액으로 냉각, 윤활 및 절단과정을 거쳐 판상 실리콘 5% 혼합용액 5,000ml을 회수하였다. 분산용액을 스프레이 드라이어에서 15,000rpm으로 회전하는 아토마이저 원판에 분당 20ml 속도로 주입하여 140도에서 건조하여 판상 실리콘 입자를 얻었다. 반경 120㎜, 3400rpm 핀밀에서 공기와 함께 분쇄하여 저밀도의 판상 실리콘 입자를 만들었다. 판상 실리콘 입자를 로타리킬른 800℃에서 10분간 체류시키면서 에틸렌 가스를 0.1M/min. 속도로 투입하여 표면에 카본 코팅막이 형성되도록 하여 카본코팅 실리콘 입자를 제조하였다The polycrystalline silicon ingot was cooled, lubricated, and cut with a mixture of water and diethylene glycol using a 50㎛ diameter diamond wioso, and 5,000 ml of a 5% mixed solution of plate-shaped silicon was recovered. The dispersion solution was injected from a spray dryer into an atomizer disk rotating at 15,000 rpm at a rate of 20 ml per minute and dried at 140 degrees to obtain plate-shaped silicon particles. Low-density plate-shaped silicon particles were made by grinding with air in a pin mill with a radius of 120 mm and 3400 rpm. While plate-shaped silicon particles were kept in a rotary kiln at 800°C for 10 minutes, ethylene gas was blown at 0.1 M/min. Carbon-coated silicon particles were manufactured by adding the product at a high rate to form a carbon coating film on the surface.
제조된 카본코팅 실리콘 입자, 흑연, 바인더, 도전재와 혼합하여 구리 호일에 도포하고 코인모양으로 타공하였다. 전지셀을 만들기 위해, 양극은 리튬호일을 코인모양으로 타공하여 사용하였고, 세퍼레이터와 전해액을 넣고 리튬이온전지 Half-cell로 조립하였다.The prepared carbon-coated silicon particles, graphite, binder, and conductive material were mixed, applied to copper foil, and punched into a coin shape. To make a battery cell, a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
[비교예 3][Comparative Example 3]
비교예 2에서 제조된 카본코팅 실리콘 입자와 구형화된 흑연을 5:95 무게비로 건식 볼밀에 투입하여 10초간 혼합하여 혼합물을 얻었다.The carbon-coated silicon particles prepared in Comparative Example 2 and spheroidized graphite were added to a dry ball mill at a weight ratio of 5:95 and mixed for 10 seconds to obtain a mixture.
혼합물을 구리 호일에 도포하고 코인모양으로 타공하였다. 전지셀을 만들기 위해, 양극은 리튬호일을 코인모양으로 타공하여 사용하였고, 세퍼레이터와 전해액을 넣고 리튬이온전지 Half-cell로 조립하였다.The mixture was applied to copper foil and punched into a coin shape. To make a battery cell, a positive electrode was used by punching lithium foil into a coin shape, a separator and electrolyte were added, and the battery was assembled into a half-cell lithium ion battery.
[실험예 1] 충방전 성능 평가[Experimental Example 1] Charging and discharging performance evaluation
실시예 1 및 2, 비교예 1 내지 3에서 제조한 Half-cell의 충방전 성능을 평가하기 위해, 용량 및 수명을 측정하였다. To evaluate the charge/discharge performance of the half-cells manufactured in Examples 1 and 2 and Comparative Examples 1 to 3, capacity and lifespan were measured.
이때, 용량은 25℃에서 충방전전류량 0.1C 조건하에서 측정하였고, 수명은 25℃에서 충방전전류량 0.1C 조건하에서 20 내지 300사이클까지 측정하였다. At this time, the capacity was measured at 25°C and a charge/discharge current of 0.1C, and the lifespan was measured from 20 to 300 cycles at 25°C and a charge/discharge current of 0.1C.
그 결과는 도 13 내지 도 17에 나타내었다. 도 12 내지 도 17은 각각 비교예 1 내지 3, 실시예 1 및 2의 Half cell 충방전 시험 결과 그래프이다.The results are shown in Figures 13 to 17. Figures 12 to 17 are graphs of half cell charge/discharge test results for Comparative Examples 1 to 3 and Examples 1 and 2, respectively.
도 13 내지 도 17을 보면 알 수 있듯이, 비교예 1은 초기 용량이 358 mAh/g로 낮게 나타났으나, 수명 성능은 300cycle을 만족하는 것을 확인할 수 있었다(도 13)As can be seen from Figures 13 to 17, Comparative Example 1 showed a low initial capacity of 358 mAh/g, but it was confirmed that the lifespan performance satisfied 300 cycles (Figure 13)
비교예 2는 카본코팅으로 초기 용량이 3250 mAh/g로 우수하게 나타났으나, 수명 성능이 낮게 나타나는 것을 확인할 수 있었다(도 14).In Comparative Example 2, the initial capacity was excellent at 3250 mAh/g with carbon coating, but it was confirmed that the lifespan performance was low (FIG. 14).
비교예 3은 초기 용량이 2000mAh/g로 높게 나타났으나, 수명 성능이 낮게 나타나는 것을 확인할 수 있었다(도 15).In Comparative Example 3, the initial capacity was high at 2000 mAh/g, but it was confirmed that the lifespan performance was low (FIG. 15).
실시예 1은 비교예 2와 비교하여 초기 용량은 다소 떨어졌으나, 수명 성능이 월등하게 좋아진 것을 확인할 수 있었고, 비교예 1과 비교해서는 초기 용량이 크게 증가한 것을 확인할 수 있었다(도 16).In Example 1, the initial capacity was slightly lower compared to Comparative Example 2, but it was confirmed that the lifespan performance was significantly improved, and the initial capacity was confirmed to be significantly increased compared to Comparative Example 1 (FIG. 16).
실시예 2는 산화막과 산화붕소 코팅막이 없는 비교예 2 대비 초기 용량과 수명 성능이 모두 향상된 것을 확인할 수 있었다(도 17)In Example 2, it was confirmed that both the initial capacity and lifetime performance were improved compared to Comparative Example 2 without an oxide film and a boron oxide coating film (FIG. 17)
이상으로 첨부된 도면을 참조하여 본 발명의 실시 예를 설명하였으나, 본 발명의 속하는 기술분야에서 통상의 지식을 가진 자는 본 발명의 기술적 사상이나 필수적인 특징을 변경하지 않고 다른 구체적인 형태로 실시할 수 있다는 것을 이해할 수 있을 것이다. 따라서 이상에서 기술한 실시 예는 모든 면에서 예시적인 것이며 한정적이 아닌 것이다.Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art can realize that the present invention can be implemented in other specific forms without changing the technical idea or essential features of the present invention. You will be able to understand it. Therefore, the embodiments described above are illustrative in all respects and are not restrictive.
[부호의 설명] [Explanation of symbols]
10 : 면상 실리콘10: cotton silicone
20 : 판상 실리콘 입자20: plate-shaped silicon particles
30 : 실리콘 산화물30: silicon oxide
31 : 산화막31: oxide film
32 : 산화붕소 코팅막32: Boron oxide coating film
40 : 판상 실리콘 복합체40: Plate-shaped silicone composite
41 : 카본 코팅막41: Carbon coating film
50a : 구형화 혼합물50a: Spheronization mixture
50b: 단순 혼합물50b: Simple mixture
51 : 흑연51: graphite

Claims (10)

  1. 폐실리콘 커프(Silicon kerf)로 형성된 판상 실리콘을 해쇄하여 0.1 내지 0.4g/㎤의 겉보기 밀도를 가지도록 만드는 1차 해쇄단계;A first disintegration step of disintegrating the plate-shaped silicon formed from a waste silicon kerf to have an apparent density of 0.1 to 0.4 g/cm3;
    상기 판상 실리콘 입자의 표면을 산화시켜 산화막이 형성된 실리콘 산화물을 만드는 산화단계;An oxidation step of oxidizing the surface of the plate-shaped silicon particles to form silicon oxide with an oxide film;
    상기 실리콘 산화물의 표면에 산화붕소를 코팅하여 산화붕소 코팅막을 형성하는 산화붕소코팅단계 및A boron oxide coating step of coating boron oxide on the surface of the silicon oxide to form a boron oxide coating film, and
    상기 산화붕소 코팅막의 표면을 전도성 카본으로 코팅하여 카본 코팅막이 형성된 판상 실리콘 복합체를 만드는 카본코팅단계를 포함하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, comprising a carbon coating step of coating the surface of the boron oxide coating film with conductive carbon to form a plate-shaped silicon composite with a carbon coating film.
  2. 제1항에 있어서,According to paragraph 1,
    상기 1차 해쇄단계 이전에, 상기 판상 실리콘을 습식밀링하고 건조하여 판상 실리콘 입자의 형태로 만드는 전처리단계를 더 포함하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.Before the first disintegration step, a method of manufacturing a silicon anode material for a lithium-ion secondary battery to which boron oxide is applied, further comprising a pretreatment step of wet milling and drying the plate-shaped silicon to form plate-shaped silicon particles.
  3. 제1항에 있어서,According to paragraph 1,
    상기 산소붕소코팅단계 이후에, 상기 산화붕소 코팅막이 형성된 실리콘 산화물을 해쇄하는 2차 해쇄단계를 더 포함하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.After the oxygen boron coating step, a method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, further comprising a secondary disintegration step of disintegrating the silicon oxide on which the boron oxide coating film is formed.
  4. 제1항에 있어서,According to paragraph 1,
    상기 카본코팅단계 이후에, 상기 판상 실리콘 복합체와 흑연을 혼합하여 혼합물을 형성하는 혼합단계를 더 포함하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.After the carbon coating step, a method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, further comprising a mixing step of mixing the plate-shaped silicon composite and graphite to form a mixture.
  5. 제1항에 있어서,According to paragraph 1,
    상기 판상 실리콘은,The plate-shaped silicon is,
    평균 두께가 10 내지 100㎚, 평균 길이가 10㎛ 이하로 형성된 것을 특징으로 하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A method of manufacturing a silicon anode material for a lithium ion secondary battery using boron oxide, characterized in that the average thickness is 10 to 100 nm and the average length is 10 μm or less.
  6. 제1항에 있어서, According to paragraph 1,
    상기 산화단계는,The oxidation step is,
    상기 실리콘 산화막의 평균 두께가 2 내지 10㎚로 형성되는 것을 특징으로 하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, characterized in that the average thickness of the silicon oxide film is formed to be 2 to 10 nm.
  7. 제1항에 있어서,According to paragraph 1,
    상기 산화단계는,The oxidation step is,
    상기 판상 실리콘 입자에 산화제를 투입하고 700 내지 1,100℃로 가열하는 것을 특징으로 하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, characterized in that an oxidizing agent is added to the plate-shaped silicon particles and heated to 700 to 1,100°C.
  8. 제1항에 있어서,According to paragraph 1,
    상기 산화붕소코팅단계는,The boron oxide coating step is,
    상기 실리콘 산화물에 붕산 수용액을 투입하고 550 내지 700℃로 가열하는 것을 특징으로 하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, characterized in that adding an aqueous solution of boric acid to the silicon oxide and heating it to 550 to 700°C.
  9. 제1항에 있어서, According to paragraph 1,
    상기 카본코팅단계는,The carbon coating step is,
    상기 카본 코팅막의 평균 두께가 3 내지 20㎚로 형성되는 것을 특징으로 하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A method of manufacturing a silicon anode material for a lithium ion secondary battery to which boron oxide is applied, characterized in that the carbon coating film is formed with an average thickness of 3 to 20 nm.
  10. 제1항에 있어서,According to paragraph 1,
    상기 카본코팅단계는,The carbon coating step is,
    상기 산화붕소코팅단계를 마친 상기 실리콘 산화물에 탄화수소가스, 액화천연가스 및 액화석유가스 중 하나를 선택하여 투입하고, 750 내지 1000℃에서 열분해시키는 것을 특징으로 하는 산화붕소가 적용된 리튬이온이차전지용 실리콘 음극재 제조방법.A silicon anode for a lithium-ion secondary battery to which boron oxide is applied, characterized in that one of hydrocarbon gas, liquefied natural gas, and liquefied petroleum gas is selected and added to the silicon oxide that has completed the boron oxide coating step, and thermally decomposed at 750 to 1000 ° C. Re-manufacturing method.
PCT/KR2022/009196 2022-04-27 2022-06-28 Method for preparing silicon anode material, for lithium-ion secondary battery, to which boron oxide is applied WO2023210869A1 (en)

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