WO2023202697A1 - Circuit d'alimentation électrique, appareil et dispositif de redresseur synchrone - Google Patents

Circuit d'alimentation électrique, appareil et dispositif de redresseur synchrone Download PDF

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Publication number
WO2023202697A1
WO2023202697A1 PCT/CN2023/089755 CN2023089755W WO2023202697A1 WO 2023202697 A1 WO2023202697 A1 WO 2023202697A1 CN 2023089755 W CN2023089755 W CN 2023089755W WO 2023202697 A1 WO2023202697 A1 WO 2023202697A1
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WO
WIPO (PCT)
Prior art keywords
diode
power supply
supply circuit
capacitor
transistor
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Application number
PCT/CN2023/089755
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English (en)
Chinese (zh)
Inventor
张亮
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深圳英集芯科技股份有限公司
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Publication of WO2023202697A1 publication Critical patent/WO2023202697A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
    • H02J7/345—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering using capacitors as storage or buffering devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/36—Means for starting or stopping converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J2207/50—Charging of capacitors, supercapacitors, ultra-capacitors or double layer capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present application relates to the field of circuit structure technology, and specifically to a power supply circuit, device and equipment for a synchronous rectifier.
  • Embodiments of the present application provide a power supply circuit, device and equipment for a synchronous rectifier, which can generate a stable charging current to charge the power supply capacitor when the duty ratio of the converter is small, thus ensuring the power of the power supply capacitor and improving the performance of the synchronous rectifier. Reliability at startup.
  • the first aspect of the embodiment of the present application provides a power supply circuit for a synchronous rectifier.
  • the power supply circuit includes: a first transistor Q1, a second transistor Q2, a first diode D1, a second diode D2, third diode D3, diode group, first capacitor C1, second capacitor C2, switch module, comparator and MOS tube Q3, among which,
  • the first end of the first diode D1 is connected to the drain of the MOS transistor Q3, and the second end of the first diode D1 is connected to the gate of the MOS transistor Q3 and the first The first end of the transistor Q1, the first end of the second diode D2, the first end of the first capacitor C1, and the first end of the diode group are connected,
  • the source of the MOS transistor Q3 is connected to the second end of the diode group, the second end of the first capacitor C1, and the first end of the third diode D3.
  • the third diode The second end of tube D3 is connected with the second end of the second diode, the first end of the second capacitor C2, the first end of the second transistor Q2, and the first end of the comparator. terminal and the power supply port of the synchronous rectifier,
  • the second end of the second transistor Q2 is connected to the third end of the second transistor Q2 and the second end of the first transistor Q1.
  • the first transistor Q1 The third terminal is connected to the first terminal of the switch module, and the control port of the switch module is connected to the second port of the comparator.
  • the power supply circuit further includes a first resistor R1, wherein a first end of the first resistor R1 is connected to the drain of the MOS transistor Q3, and the The second terminal of the first resistor R1 is connected to the first terminal of the first diode D1.
  • the power supply circuit further includes a second resistor R2, wherein the The first end of the second resistor R2 is connected to the second end of the first diode, and the second end of the second resistor R2 is connected to the first end of the second diode.
  • the diode group includes K diodes, wherein the K diodes are connected in series.
  • the power supply circuit further includes a filter module, wherein,
  • the first end of the filter module is connected to the first end of the second capacitor C2, and the second end of the filter module is connected to the power supply port of the synchronous rectifier.
  • the power supply circuit further includes a protection module, and the protection module includes a fourth diode D4, a fifth diode D5, and a third capacitor C3, where,
  • the first end of the fourth diode D4 is connected to the first end of the first resistor R1, and the second end of the fourth diode D4 is connected to the first end of the fifth diode D5.
  • the second end of the fifth diode D5 is connected to the first end of the third capacitor C3, and the second end of the third capacitor C3 is connected to ground.
  • the power supply circuit further includes a temperature detection module, wherein the temperature detection module is used to detect the temperature of the MOS tube Q3.
  • the first resistor R1 or the second resistor R2 is a variable resistor.
  • a second aspect of the embodiments of the present application provides a power supply device for a synchronous rectifier.
  • the power supply device includes a circuit board and a power supply circuit for a synchronous rectifier as described in any one of the first aspects.
  • a third aspect of the embodiment of the present application provides a power supply device for a synchronous rectifier.
  • the power supply device includes a housing and a power supply device for a synchronous rectifier as described in the second aspect.
  • the power supply circuit of the synchronous rectifier includes: the first transistor Q1, the second transistor Q2, the first diode D1, the second diode D2, the third diode D3, the diode group, the first capacitor C1, The second capacitor C2, the switch module, the comparator and the MOS transistor Q3, wherein the first end of the first diode D1 is connected to the drain of the MOS transistor Q3, and the first end of the first diode D1
  • the second terminal is connected to the gate of the MOS transistor Q3, the first terminal of the first transistor Q1, the first terminal of the second diode D2, the first terminal of the first capacitor C1,
  • the first end of the diode group is connected, and the source of the MOS transistor Q3 is connected to the second end of the diode group, the second end of the first capacitor C1, and the third end of the third diode D3.
  • the second end of the third diode D3 is connected to the second end of the second diode, the first end of the second capacitor C2, and the second end of the second transistor Q2.
  • the first terminal, the first terminal of the comparator, and the power supply port of the synchronous rectifier are connected, and the second terminal of the second transistor Q2 is connected with the third terminal of the second transistor Q2 and the third terminal of the second transistor Q2.
  • the second end of a transistor Q1 is connected, the third end of the first transistor Q1 is connected with the first end of the switch module, and the control port of the switch module is connected with the second port of the comparator.
  • the power supply port of the synchronous rectifier can be supplied through the second capacitor C2, so that when the duty ratio of the converter is small, a stable charging current can be generated to charge the second capacitor C2, thus ensuring that the second capacitor
  • the power of C2 improves the reliability of the synchronous rectifier during startup.
  • Figure 1 is a schematic structural diagram of a power supply circuit of a synchronous rectifier provided in an embodiment of the present application
  • Figure 2 is a schematic structural diagram of another power supply circuit of a synchronous rectifier provided by an embodiment of the present application
  • Figure 3 is a schematic structural diagram of another power supply circuit of a synchronous rectifier provided in an embodiment of the present application.
  • Figure 4 is a schematic structural diagram of another power supply circuit of a synchronous rectifier provided by an embodiment of the present application.
  • Figure 5 is a schematic structural diagram of another power supply circuit of a synchronous rectifier provided by an embodiment of the present application.
  • Figure 6 provides a VCC startup waveform of a power supply circuit under a small duty cycle according to an embodiment of the present application
  • Figure 7 is a waveform diagram of a power supply circuit when VCC operates stably under a small duty cycle according to an embodiment of the present application.
  • an embodiment means that a particular feature, structure or characteristic described in connection with the embodiment may be included in at least one embodiment of the application.
  • the appearances of this phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.
  • FIG. 1 is a schematic structural diagram of a power supply circuit of a synchronous rectifier according to an embodiment of the present application.
  • the power supply circuit includes:
  • the first end of the first diode D1 is connected to the drain of the MOS transistor Q3, and the second end of the first diode D1 is connected to the gate of the MOS transistor Q3 and the first The first end of the transistor Q1, the first end of the second diode D2, the first end of the first capacitor C1, and the first end of the diode group are connected,
  • the source of the MOS transistor Q3 is connected to the second end of the diode group, the second end of the first capacitor C1, and the first end of the third diode D3.
  • the third diode The second end of tube D3 is connected with the second end of the second diode, the first end of the second capacitor C2, the first end of the second transistor Q2, and the first end of the comparator. terminal and the power supply port of the synchronous rectifier,
  • the second end of the second transistor Q2 is connected to the third end of the second transistor Q2 and the second end of the first transistor Q1.
  • the first transistor Q1 The third terminal is connected to the first terminal of the switch module, and the control port of the switch module is connected to the second port of the comparator.
  • the power supply circuit of the synchronous rectifier includes: a first transistor Q1, a second transistor Q2, a first diode D1, a second diode D2, a third diode D3, a diode group, and a third diode.
  • the second end of the transistor D1 is connected to the gate of the MOS transistor Q3, the first end of the first transistor Q1, the first end of the second diode D2, and the first capacitor C1.
  • the first end and the first end of the diode group are connected.
  • the source of the MOS transistor Q3 is connected to the second end of the diode group, the second end of the first capacitor C1 and the third diode.
  • the first end of the tube D3 is connected, and the second end of the third diode D3 is connected to the second end of the second diode, the first end of the second capacitor C2, and the second end of the third diode D3.
  • the first end of the transistor Q2, the first end of the comparator, and the power supply port of the synchronous rectifier are connected, and the second end of the second transistor Q2 is connected to the third end of the second transistor Q2.
  • the second end of the first transistor Q1 is connected, the third end of the first transistor Q1 is connected with the first end of the switch module, the control port of the switch module is connected with the comparator is connected to the second port of The electric capacity of the second capacitor C2 is increased, thereby improving the reliability of the synchronous rectifier during startup.
  • the power supply circuit further includes a first resistor R1, wherein the first end of the first resistor R1 is connected to the drain of the MOS transistor Q3, so The second terminal of the first resistor R1 is connected to the first terminal of the first diode D1.
  • the power supply circuit further includes a second resistor R2, wherein the first end of the second resistor R2 is in phase with the second end of the first diode. connection, the second end of the second resistor R2 is connected to the first end of the second diode.
  • the diode group includes K diodes, wherein the K diodes are connected in series.
  • K is a preset fixed value, which is set through experience value or historical data.
  • the power supply circuit also includes a filter module 40, wherein,
  • the first end of the filter module 40 is connected to the first end of the second capacitor C2, and the second end of the filter module 40 is connected to the power supply port of the synchronous rectifier.
  • the power supply circuit also includes a protection module, and the protection module includes a fourth diode D4, a fifth diode D5, and a third capacitor C3, where,
  • the first end of the fourth diode D4 is connected to the first end of the first resistor R1, and the second end of the fourth diode D4 is connected to the first end of the fifth diode D5.
  • the second end of the fifth diode D5 is connected to the first end of the third capacitor C3, and the second end of the third capacitor C3 is connected to ground.
  • the fourth diode D4 is turned on to supply power to the capacitor C3, and the third capacitor C3 is charged.
  • the fifth diode D5 After the charging of the third capacitor C3 reaches the charging threshold, the fifth diode D5 Then it can be turned on and then supply power to the circuit, thereby protecting the circuit and also supplying power to the circuit, which improves the reliability of the circuit.
  • the power supply circuit further includes a temperature detection module (not shown in the figure), where the temperature detection module is used to detect the temperature of the MOS transistor Q3.
  • the first resistor R1 or the second resistor R2 is a variable resistor.
  • R1 is a current-limiting resistor, limiting the quiescent current through R1;
  • D1 is a diode, preventing the gate voltage of MOS tube Q3 from leaking to VD when VD is low;
  • MOS tube Q3 is a high-voltage power tube, used to withstand voltage and generate charging current Ic;
  • DM is a diode string, mainly used to generate a basically constant gate voltage of MOS tube Q3 to make the charging current Ic constant;
  • D3 is a diode to prevent VCC from leaking to VD when VD is low;
  • C2 is a storage The energy capacitor stores energy when VD is charging at a high potential and supplies power to the synchronous rectifier when VD is low;
  • D2 is a diode to prevent VA from leaking electricity to VCC, R2 is
  • D2, R2, C1, DM and MOS transistor Q3 together form a charge pump, so that the gate-source voltage of MOS transistor Q3 is always maintained at Vth (DM), so that it can be charged quickly when VD is at a high potential; compare Device 30, with hysteresis Vhys, is mainly used to keep the VCC voltage near VREF; Q1 and Q2 form a clamping circuit.
  • the switch module 20 pulls down VA, the highest voltage of VA is clamped near VCC.
  • VCC voltage is the ground potential VSS, so it cannot charge VA through the charge pump. VA can only be charged through the path of R1 and D1.
  • Vth(D1) is the turn-on threshold of D1.
  • VD When VD is at a high potential, the current shown in equation (3.1) charges C1.
  • VD When VD is at a low potential, due to the one-way conduction characteristics of D1, VA will remain unchanged and will not leak current to VD, so the VA voltage will gradually rise.
  • the VA voltage rises to the turn-on threshold Vth of MOS transistor Q3, then MOS transistor Q3 will turn on, and the VCC voltage will begin to rise. After that, during the low voltage period of VD, VCC will also charge VA, and the startup speed will increase. further speed up.
  • VCC When the VA voltage continues to rise, the gate-source voltage of MOS transistor Q3 will be clamped to Vth (DM).
  • VD When VD is high, the charging current Ic will remain basically unchanged, and VCC will also continue to rise.
  • VCC When VCC rises to VREF, it means that the startup is completed and the system enters the stable working stage.
  • Figure 6 is the VCC startup waveform of the self-powered circuit of the present invention under a small duty cycle. It can be seen from Figure 6 that the VA voltage is at a low potential at the beginning, and VDS (the voltage of VD relative to VSS) is charged by the current shown in equation (3.1) during the high potential period of each cycle. VDS is low in each cycle. During the potential period, since the one-way conduction characteristic of D1 remains unchanged, VA gradually rises and VCC remains at a low potential; after several cycles, VA rises to the turn-on threshold Vth of MOS transistor Q3. At this time, Ic begins to have current and the VCC voltage rises.
  • VDS the voltage of VD relative to VSS
  • VCC will also charge it during the low potential period of each cycle of VDS, that is, the charge pump starts to work, so VA rises faster, and the charging current Ic also continues to increase; when VA rises to Vth(DM)+Vth(D2)+VCC, the gate-source voltage of MOS transistor Q3 will remain at Vth(DM), and the charging current Ic is charged every cycle The period will remain unchanged and VCC continues to rise; when VA rises to Vth(DM)+Vth(D2)+VREF, that is, when VCC rises to VREF, the comparator output ENDN jumps to high, and the highest voltage of VA will be clamped at VCC , MOS tube Q3 is turned off during the high potential period of VDS, and the startup process ends at this time.
  • Vth (Q2) is the turn-on threshold voltage of the second transistor Q2.
  • Vth (Q1) is the turn-on threshold voltage of the first transistor Q1, which is approximately equal to the turn-on threshold voltage Vth (Q2) of the second transistor Q2. Therefore, when VA drops to less than VCC, the first transistor Q1 will shutdown, i.e. the highest voltage of VA is clamped Near VCC. In this way, when VDS is at a high potential, since VA is clamped at VCC, the MOS transistor Q3 will not conduct, and there is no charging current Ic. When VDS is at a low potential, VCC still supplies power to C1 to maintain the gate-source voltage of the MOS transistor Q3. is Vth(DM), VCC decreases slowly due to the internal power consumption of synchronous rectification.
  • VCC When the VCC voltage drops to less than VREF-Vhys, VCC needs to be charged again. Since VDS is at low potential at this time, the gate-source voltage of MOS transistor Q3 is Vth (DM). Therefore, when VDS is at high potential, VA will quickly rises and generates a constant charging current Ic to charge VCC until VCC rises to VREF again, repeating the previous process.
  • FIG. 7 is a waveform diagram of the self-powered circuit of the present invention when VCC operates stably under a small duty cycle.
  • the self-powered circuit needs to charge VCC.
  • the voltage of VA is equal to the gate voltage of MOS transistor Q3 and remains at Vth (DM);
  • the VDS voltage is high, since the voltage on both sides of the C1 capacitor cannot change suddenly, the VA voltage rises rapidly and maintains the gate voltage of MOS transistor Q3.
  • the gate voltage is Vth(DM), so a constant charging current Ic is quickly generated, and the VCC voltage increases.
  • the disclosed device can be implemented in other ways.
  • the device embodiments described above are only illustrative.
  • the division of the units is only a logical function division. In actual implementation, there may be other division methods.
  • multiple units or components may be combined or may be Integrated into another system, or some features can be ignored, or not implemented.
  • the coupling or direct coupling or communication connection between each other shown or discussed may be through some interfaces, and the indirect coupling or communication connection of the devices or units may be in electrical or other forms.
  • the units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.
  • each functional unit in each embodiment of the application can be integrated into one processing unit, or each unit can exist physically alone, or two or more units can be integrated into one unit.
  • the above integrated units can be implemented in the form of hardware or software program modules.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Selon des modes de réalisation, la présente demande concerne un circuit d'alimentation électrique, un appareil et un dispositif d'un redresseur synchrone. Le circuit d'alimentation électrique comprend : une première triode Q1, une seconde triode Q2, une première diode D1, une deuxième diode D2, une troisième diode D3, un groupe de diodes, un premier condensateur C1, un second condensateur C2, un module de commutation, un comparateur et un transistor MOS Q3. Lorsque le cycle de travail d'un convertisseur est relativement faible, un courant de charge stable peut être généré pour charger un condensateur d'alimentation, de sorte que la quantité électrique du condensateur d'alimentation est assurée et que la fiabilité du redresseur synchrone pendant le démarrage est améliorée.
PCT/CN2023/089755 2022-04-22 2023-04-21 Circuit d'alimentation électrique, appareil et dispositif de redresseur synchrone WO2023202697A1 (fr)

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Application Number Priority Date Filing Date Title
CN202210429425.9A CN114531014B (zh) 2022-04-22 2022-04-22 同步整流器的供电电路、装置及设备
CN202210429425.9 2022-04-22

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WO2023202697A1 true WO2023202697A1 (fr) 2023-10-26

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