WO2023202436A1 - Capteur de veines des doigts et dispositif électronique - Google Patents

Capteur de veines des doigts et dispositif électronique Download PDF

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Publication number
WO2023202436A1
WO2023202436A1 PCT/CN2023/087735 CN2023087735W WO2023202436A1 WO 2023202436 A1 WO2023202436 A1 WO 2023202436A1 CN 2023087735 W CN2023087735 W CN 2023087735W WO 2023202436 A1 WO2023202436 A1 WO 2023202436A1
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WO
WIPO (PCT)
Prior art keywords
light
finger vein
emitting element
vein sensor
substrate
Prior art date
Application number
PCT/CN2023/087735
Other languages
English (en)
Chinese (zh)
Inventor
周琳
李成
孔德玺
蔡寿金
王迎姿
陈紫霄
Original Assignee
京东方科技集团股份有限公司
北京京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2023202436A1 publication Critical patent/WO2023202436A1/fr

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Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
    • A61B5/024—Detecting, measuring or recording pulse rate or heart rate
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/145—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue
    • A61B5/1455—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters
    • A61B5/14551—Measuring characteristics of blood in vivo, e.g. gas concentration, pH value; Measuring characteristics of body fluids or tissues, e.g. interstitial fluid, cerebral tissue using optical sensors, e.g. spectral photometrical oximeters for measuring blood gases

Definitions

  • the present application relates to the field of sensing technology, and in particular to a finger vein sensor and electronic equipment.
  • Finger vein sensors can be used to examine the characteristics of veins in fingers.
  • finger veins are composed of the shape and distribution position of multiple veins in the fingers.
  • Embodiments of the present application provide a finger vein sensor and electronic device.
  • the technical solutions are as follows:
  • a finger vein sensor has a sensing area and a peripheral area located around the sensing area.
  • the finger vein sensor includes:
  • At least one infrared light source is located on the substrate and distributed in the peripheral area.
  • the infrared light source includes: at least one first light-emitting element and at least two second light-emitting elements located on both sides of the at least one first light-emitting element. Light-emitting element, the distance between the first light-emitting element and the sensing area is smaller than the distance between the second light-emitting element and the sensing area;
  • an infrared detector located on the substrate and distributed in the sensing area, the infrared detector is configured to: when the object to be detected is located in the sensing area, and the at least one infrared light source After emitting infrared light to the object to be detected, the infrared light reflected by the object to be detected is detected.
  • the infrared light source further includes: a circuit board, the at least one first light-emitting element and the at least two second light-emitting elements are electrically connected to the circuit board, and the circuit board is used to connect all The distance between the part of the first light-emitting element and the sensing area is smaller than the distance between the parts of the circuit board used to connect The distance between the part of the second light-emitting element and the sensing area.
  • the circuit board is in a strip shape, and has a first strip-shaped part connected to the first light-emitting element, and a second strip-shaped part connected to the second light-emitting element, and the The minimum distance between the first strip portion and the sensing area is smaller than the minimum distance between the second strip portion and the sensing area.
  • the extension direction of the first strip part is parallel to the extension direction of the second strip part
  • the circuit board also has a circuit board for connecting the first strip part and the second strip part.
  • the width of the connecting portion is smaller than the width of the first strip portion and smaller than the width of the second strip portion.
  • first strip portion and the second strip portion are both in arc-shaped strip shapes, and the curvature of the first strip portion is the same as the curvature of the second strip portion.
  • the height of the first light-emitting element is smaller than the height of the second light-emitting element.
  • the number of second light-emitting elements located on one side of the at least one first light-emitting element is equal to the number of second light-emitting elements located on the other side of the at least one first light-emitting element.
  • the number of components is the same.
  • the side of the substrate used to carry the at least one infrared light source and the infrared detector is an arc-shaped concave surface, and the arc-shaped extending direction of the arc-shaped concave surface is consistent with the overall extending direction of the infrared light source. intersect.
  • the side of the substrate used to carry the at least one infrared light source and the infrared detector is a concave arc surface, and the arc range of the concave arc surface is: 10° to 60°.
  • the angle range between the optical axis of the first light-emitting element and the substrate, and the angle range between the optical axis of the second light-emitting element and the substrate are both: 30°. to 90°.
  • the infrared detector includes: a plurality of drive circuits located on the substrate, a semiconductor layer located on a side of the multiple drive circuits facing away from the substrate, and a semiconductor layer located on a side of the semiconductor layer facing away from the substrate.
  • the semiconductor layer is electrically connected to the plurality of driving circuits and the transparent electrode layer respectively.
  • the semiconductor layer is a planar structure arranged throughout the layer.
  • the semiconductor layer has a plurality of semiconductor blocks corresponding to the driving circuits, and the plurality of semiconductor blocks are electrically connected to the driving circuits in a one-to-one correspondence.
  • the infrared detector further includes: a pixel definition layer, the pixel definition layer has a plurality of pixel openings, the plurality of pixel openings correspond to the plurality of semiconductor blocks, and the semiconductor blocks Located in the corresponding pixel opening.
  • the infrared detector further includes: an encapsulation layer located on the side of the semiconductor layer facing away from the substrate, and an optical alignment layer located on the side of the encapsulation layer facing away from the substrate.
  • the infrared detector further includes: a filter film located between the encapsulation layer and the optical alignment layer, or the filter film is located between the optical alignment layer The side facing away from the substrate;
  • the filter film is used to filter light other than the infrared light.
  • the driving circuit includes: a thin film transistor, and a transfer electrode electrically connected to the thin film transistor, and the transfer electrode is electrically connected to the semiconductor layer;
  • the finger vein sensor further includes: a flat layer located on a side of the thin film transistor away from the substrate, the flat layer has an opening, and a part of the transfer electrode is located in the opening and is in contact with the film.
  • the transistors are electrically connected, and another portion of the transfer electrode is located on a side of the planar layer facing away from the substrate.
  • the finger vein sensor further includes: a sensing electrode located on the side of the infrared detector facing away from the substrate, and a sensing electrode respectively connected to the sensing electrode, the at least one infrared light source and the infrared detection electrically connected controller.
  • the finger vein sensor further includes: a virtual sensing unit located in a circle around the infrared detector, the virtual sensing unit is electrically connected to the controller, and the structure of the virtual sensing unit is consistent with The sensing units in the infrared detector have the same structure, and the virtual sensing unit does not receive infrared light reflected by the object to be detected.
  • an electronic device including: a housing, and a finger vein sensor connected to the housing, where the finger vein sensor is any one of the above finger vein sensors.
  • a finger vein sensor includes: a substrate, an infrared light source and an infrared detector. Because the distance between the first light-emitting element in the infrared light source and the sensing area is smaller than the distance between the second light-emitting element in the infrared light source and the sensing area. Therefore, the near-infrared light emitted by the first light-emitting element will be emitted to the object to be detected in the sensing area through a short distance. When the object to be detected is the user's finger, the distance between the knuckle of the user's finger and the first light-emitting element is small, and the near-infrared light emitted by the first light-emitting element passes through a relatively small distance.
  • the finger vein sensor can shoot to the finger joints from a short distance, making the vein distribution image at the joints better.
  • the distance between other parts of the user's fingers except the knuckles and the second light-emitting element is relatively large, which can ensure that the subsequent vein distribution image sensed by the finger vein sensor through the infrared light source is the vein distribution image at the middle finger joint of the user's finger.
  • the difference between the vein distribution images of parts other than finger joints is small.
  • the thickness of the finger vein sensor provided by the embodiments of the present application is smaller, which facilitates the integration of the finger vein sensor and other components in an electronic device, making the electronic device integrating the finger vein sensor smaller in size.
  • Figure 1 is a top view of a finger vein sensor provided by an embodiment of the present application.
  • Figure 2 is a schematic diagram of the operation of a finger vein sensor provided by an embodiment of the present application.
  • Figure 3 is a rendering of a user's finger placed on a finger vein sensor provided by an embodiment of the present application
  • Figure 4 is a top view of an infrared light source provided by an embodiment of the present application.
  • Figure 5 is a top view of another infrared light source provided by the embodiment of the present application.
  • Figure 6 is a schematic structural diagram of a finger vein sensor provided by an embodiment of the present application.
  • Figure 7 is a top view of another finger vein sensor provided by an embodiment of the present application.
  • Figure 8 is a schematic structural diagram of A-A' shown in Figure 7;
  • Figure 9 is a schematic diagram of the operation of another finger vein sensor provided by an embodiment of the present application.
  • Figure 10 is a schematic diagram of the film layer of an infrared detector provided by an embodiment of the present application.
  • Figure 11 is a schematic diagram of the film layer of another infrared detector provided by an embodiment of the present application.
  • Figure 12 is a schematic diagram of a semiconductor layer provided by an embodiment of the present application.
  • Figure 13 is a schematic diagram of the film layer of another infrared detector provided by the embodiment of the present application.
  • Figure 14 is a schematic structural diagram of an optical alignment layer provided by an embodiment of the present application.
  • Figure 15 is a top view of an optical alignment layer provided by an embodiment of the present application.
  • Figure 16 is a schematic structural diagram of another optical alignment layer provided by an embodiment of the present application.
  • Figure 17 is a schematic diagram of the film layer of yet another infrared detector provided by an embodiment of the present application.
  • Figure 18 is a schematic structural diagram of another finger vein sensor provided by an embodiment of the present application.
  • Figure 19 is a rendering of a wearable device worn by a user according to an embodiment of the present application.
  • finger vein sensors can be composed of near-infrared light sources, reflectors and macro cameras.
  • the near-infrared light source can emit near-infrared light (wavelength range is 700 nanometers to 1000 nanometers) and shine on the user's fingers.
  • the hemoglobin in the user's finger vein will absorb the near-infrared light emitted to the finger vein, and the unabsorbed part of the near-infrared light will be emitted to the reflector through slow reflection.
  • the macro camera takes a picture of the near-infrared light reflected from the mirror. In this way, the vein distribution map inside the user's finger can be obtained.
  • the thickness of a finger vein sensor equipped with a reflector and a macro camera is usually relatively large, resulting in a larger electronic device integrating the finger vein sensor.
  • FIG. 1 is a top view of a finger vein sensor provided by an embodiment of the present application.
  • the finger vein sensor 000 has a sensing area 00a, and a peripheral area 00b located around the sensing area 00a.
  • the finger vein sensor 000 may include: a substrate 100, at least one infrared light source 200 located on the substrate 100 and distributed in the peripheral area 00b, and an infrared detector 300 located on the substrate 100 and distributed in the sensing area 00a.
  • FIG. 1 schematically illustrates the finger vein sensor 000 including two infrared light sources 200 as an example, and the two infrared light sources 200 are distributed on opposite sides of the sensing area 00a.
  • the infrared light source 200 may include: at least one first light-emitting element 201 and at least two second light-emitting elements 202 located on both sides of the at least one first light-emitting element 201.
  • the distance between the first light-emitting element 201 and the sensing area 00a is less than The distance between the second light-emitting element 202 and the sensing area 00a.
  • the infrared detector 300 is configured to detect the infrared light reflected by the object to be detected after the object to be detected is located in the sensing area 00a and at least one infrared light source 200 emits infrared light to the object to be detected.
  • the object to be detected can be the user's finger, palm, or wrist, and the infrared light emitted by the infrared light source 200 can be near-infrared light, with a wavelength ranging from 700 nanometers to 1000 nanometers.
  • Figure 2 is the The embodiment provides a working schematic diagram of a finger vein sensor.
  • the object P to be detected for example, the user's finger
  • the finger vein Q in the user's finger has reduced hemoglobin
  • the reduced hemoglobin will absorb the incoming The finger vein Q emits near-infrared light, while other tissue structures in the finger do not absorb near-infrared light. Therefore, the unabsorbed part of the near-infrared light emitted to the finger will be reflected by other tissue structures in the finger, so that the infrared detector 300 can receive this part of the near-infrared light.
  • the finger vein sensor 000 can obtain the vein distribution image inside the user's finger through the infrared detector 300 .
  • the distance h1 between the first light-emitting element 201 and the sensing area 00a in each infrared light source 200 is smaller than the distance h2 between the second light-emitting element 202 and the sensing area 00a. Therefore, the near-infrared light emitted from the first light-emitting element 201 will be emitted to the object P to be detected in the sensing area 00a through a short distance.
  • Figure 3 is an effect diagram of a user's finger placed on the finger vein sensor according to an embodiment of the present application.
  • the finger knuckle K is adjacent to the first light-emitting element 201 , and other parts of the user's finger except the finger knuckle K are adjacent to the second light-emitting element 202 . This is because the tissue structure at the knuckle K in the user's finger is more complex than the tissue structure at other parts except the knuckle K.
  • the near-infrared light emitted to the finger joint K is more than the near-infrared light emitted to other parts except the finger joint K.
  • the distance h1 between the first light-emitting element 201 and the sensing area 00a in each infrared light source 200 is smaller than the distance h2 between the second light-emitting element 202 and the sensing area 00a, the user's finger can be The distance between the joint K and the first light-emitting element 201 is small, while the distance between other parts of the user's finger except the knuckle K and the second light-emitting element 202 is large.
  • the first light-emitting element 201 that is closer to the sensing area 00a emits more near-infrared light, and more near-infrared light is directed to the user's finger joint K; the second light-emitting element 202 that is farther from the sensing area 00a emits near-infrared light.
  • the infrared rays more near-infrared rays are directed toward other parts of the user's fingers except the knuckle K.
  • the vein distribution image at the finger joint K is mainly an image obtained based on the infrared light provided by the first light-emitting element 201 , except for the finger joint K
  • the vein distribution images of other parts are mainly images obtained based on the infrared light provided by the second light-emitting element 202 .
  • the distance between the first light-emitting element 201 and the sensing area 00a is relatively close.
  • the near-infrared light emitted by the first light-emitting element 201 can be directed to the finger joint K through a short distance, so that the finger vein Q at the joint is
  • the reduced hemoglobin can absorb more near-infrared light and further Therefore, the effect of the vein distribution image at the user's finger joint K sensed by the finger vein sensor 000 through the first light-emitting element 201 is better.
  • the distance between the second light-emitting element 202 and the sensing area 00a is relatively large, which can ensure that the subsequent vein distribution image sensed by the finger vein sensor 000 through the infrared light source 200 is the vein distribution image at the middle finger joint K of the user's finger, and The difference between the vein distribution images of parts other than the knuckle K is small. In this way, the finger vein sensor 000 has a better effect of obtaining the vein distribution image inside the user's finger through the infrared light source 200 .
  • the finger vein sensor 000 provided in this application compared with related technologies that require a reflector and a macro camera to be provided in the finger vein sensor, the finger vein sensor 000 provided in this application only needs to use an infrared light source 200 and an infrared detector 300 to obtain the user's finger. Internal image of vein distribution.
  • the thickness of the vein sensor in the related art is 10 mm, while the thickness of the finger vein sensor 000 provided by this application is only 2 mm. In this way, the thickness of the finger vein sensor 000 provided by the embodiment of the present application is small, which is beneficial to integrating the finger vein sensor 000 with other components in an electronic device, making the electronic device integrating the finger vein sensor smaller.
  • a finger vein sensor which includes: a substrate, an infrared light source and an infrared detector. Because the distance between the first light-emitting element in the infrared light source and the sensing area is smaller than the distance between the second light-emitting element in the infrared light source and the sensing area. Therefore, the near-infrared light emitted by the first light-emitting element will be emitted to the object to be detected in the sensing area through a short distance.
  • the distance between the knuckle of the user's finger and the first light-emitting element is small, and the near-infrared light emitted by the first light-emitting element can be directed to the knuckle after a short distance, so that The effect of the vein distribution image at the joint is better.
  • the distance between other parts of the user's fingers except the knuckles and the second light-emitting element is relatively large, which can ensure that the subsequent vein distribution image sensed by the finger vein sensor through the infrared light source is the vein distribution image at the middle finger joint of the user's finger. , and the difference between the vein distribution images of parts other than finger joints is small.
  • the thickness of the finger vein sensor provided by the embodiments of the present application is smaller, which facilitates the integration of the finger vein sensor and other components in an electronic device, making the electronic device integrating the finger vein sensor smaller in size.
  • the finger vein sensor 000 usually detects the finger vein Q within a certain length range from the fingertip to the palm of the user's finger. Therefore, the length of the infrared detector 300 in the finger vein sensor 000 may be in the range of 25 mm to 50 mm, and the width of the infrared detector 300 in the finger vein sensor 000 may be in the range of 10 mm to 25 mm. In this way, when the user's finger is located in the sensing area 00a of the finger vein sensor 000, the finger vein sensor 000 can sense the longer length of the user's finger. Partial image of finger vein distribution. In this way, the subsequent integration of the finger vein sensor 000 into the electronic device can improve the accuracy of the electronic device in detecting the finger vein distribution image.
  • the infrared light source 200 in the finger vein sensor 000 is connected to the sensing area 00a There needs to be a certain distance between them.
  • the distance h1 between the first light-emitting element 201 and the sensing area 00a ranges from 2 mm to 10 mm.
  • the number of second light-emitting elements 202 located on one side of at least one first light-emitting element 201 is different from the number of second light-emitting elements 202 located on the other side of at least one first light-emitting element 201.
  • the number of light-emitting elements 202 is the same.
  • the distance between each first light-emitting element 201 and the sensing area 00a is equal, and the distance between each second light-emitting element 202 and the sensing area 00a is equal.
  • the distance between zones is equal to 00a.
  • first light-emitting elements 201 and two second light-emitting elements 202 show a case of two first light-emitting elements 201 and two second light-emitting elements 202.
  • the second light-emitting elements 202 on both sides of at least one first light-emitting element 201 emit near-infrared light, it can be ensured that the light intensity of the near-infrared light emitted to parts of the user's fingers except the knuckle K is the same.
  • FIG. 4 is a top view of an infrared light source provided by an embodiment of this application.
  • the infrared light source 200 may also include: a circuit board 203, with at least one first light-emitting element 201 and at least two second light-emitting elements 202 being electrically connected to the circuit board 203.
  • the circuit board 203 is used to control each first light-emitting element 201 and each second light-emitting element 202 to emit near-infrared light.
  • the distance h3 between the part of the circuit board 203 used to connect the first light-emitting element 201 and the sensing area 00a is smaller than the distance h3 between the part of the circuit board 203 used to connect the second light-emitting element 202 and the sensing area.
  • the circuit board 203 in the infrared light source 200 may be in a strip shape, and the circuit board 203 may have: a first strip portion 2031 connected to the first light-emitting element 201, and a second strip portion connected to the second light-emitting element 2022.
  • the minimum distance h3 between the first strip-shaped portion 2032 and the sensing area 00a is smaller than the minimum distance h4 between the second strip-shaped portion 2032 and the sensing area 00a. In this way, it can be ensured that the distance h1 between the first light-emitting element 201 and the sensing area 00a is smaller than the distance h2 between the second light-emitting element 202 and the sensing area 00a, thereby making the vein distribution image inside the user's finger better.
  • circuit board 203 in the embodiment of the present application has various forms.
  • the embodiment of the present application will take the following two optional implementation methods as examples for explanation:
  • the first strip portion 2031 in the circuit board 203 The extending direction of is parallel to the extending direction of the second strip portion 2032.
  • the circuit board 203 may also have a connecting part for connecting the first strip part 2031 and the second strip part 2032.
  • the width of this connecting part may be smaller than the width of the first strip part 2031, and the width of this connecting part It can also be smaller than the width of the second strip portion 2032.
  • the width of the first strip portion 2031 in the circuit board 203 may be equal to the width of the second strip portion 2032.
  • the circuit board 203 in the infrared light source 200 may be a zigzag strip circuit board.
  • FIG. 5 is a top view of another infrared light source provided by an embodiment of the present application.
  • the first strip portion 2031 and the second strip portion 2032 in the circuit board 203 can both be in the shape of arc-shaped strips, and the curvature of the first strip portion 2031 can be the same as the curvature of the second strip portion 2032 .
  • the circuit board 203 in the infrared light source 200 may be an arc-shaped strip circuit board.
  • the circuit board 203 in the infrared light source 200 may be a zigzag strip-shaped circuit board or an arc-shaped strip circuit board, or may also be other irregular shapes.
  • the embodiment of the present application does not limit the shape of the circuit board.
  • the area between the first strip portion 2031 and the sensing area 00a in the circuit board 203 can also be used to arrange other data signal lines.
  • the circuit board 203 The area between the second strip portion 2032 and the sensing area 00a can also be used to arrange other data signal lines, which is beneficial to the finger vein sensor 000 to achieve a narrow frame effect, so that the sensing area 00a of the finger vein sensor 000 is larger.
  • FIG. 6 is a schematic structural diagram of a finger vein sensor provided by an embodiment of the present application.
  • the height H1 of the first light-emitting element 201 is smaller than the height H2 of the second light-emitting element 202.
  • the light emitting surface of the first light emitting element 201 is closer to the substrate 100 than the light emitting surface of the second light emitting element 202.
  • the light-emitting surface of the first light-emitting element 201 is different from the light-emitting surface of the second light-emitting element 202 by 0.01 mm to 1 mm.
  • the near-infrared rays directed at the finger joints need to be as perpendicular to the skin surface at the finger joints as possible, so that the finger veins at the finger joints are close to the skin surface. Finger veins are better able to absorb near-infrared light that hits the knuckles.
  • the height H1 of the first light-emitting element 201 is smaller than the height H2 of the second light-emitting element 202 , then the distance between the knuckles of the user's fingers and the light-emitting surface of the first light-emitting element 201 is relatively large.
  • the near-infrared rays emitted by the first light-emitting element 201 can be emitted approximately vertically towards the knuckles of the user's fingers, so that the near-infrared rays emitted towards the knuckles can be better approached by the knuckles.
  • the finger veins on the skin surface absorb, thereby making the finger vein sensor 000 have a better effect on the vein distribution image at the user's finger joints sensed through the first light-emitting element 201 .
  • the light emission of the part of the user's finger except the knuckles is different from that of the second light-emitting element 202.
  • the distance between the surfaces is small, so that in the vein distribution image sensed by the finger vein sensor, the difference between the vein distribution image at the middle finger joint of the user's finger and the vein distribution image in parts other than the finger joint is smaller. In this way, the effect of the vein distribution image inside the user's finger sensed by the finger vein sensor 000 through the infrared light source 200 can be further improved.
  • FIG. 7 is a top view of another finger vein sensor provided by the embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of A-A’ shown in FIG. 7 .
  • the surface of the substrate 100 in the finger vein sensor 000 for carrying at least one infrared light source 200 and the infrared detector 300 is an arc-shaped concave surface, and the arc-shaped extending direction of the arc-shaped concave surface intersects with the overall extending direction of the infrared light source 200 .
  • the arc-shaped extending direction of the arc-shaped concave surface may be perpendicular to the overall extending direction of the infrared light source 200 .
  • the overall extension direction of the infrared light source 200 refers to the arrangement direction of the plurality of light-emitting elements in the infrared light source 200 .
  • the concave surface formed by the arc-shaped substrate can facilitate the user to place the finger within the arc-shaped concave surface to provide the user with a better experience.
  • the substrate 100 is an arc-shaped concave surface, in the vertical direction, the position of the infrared light source 200 on the arc-shaped substrate 100 is smaller than that of the infrared detector on the arc-shaped substrate 100
  • the lowest position of 300 is higher, that is, there is a height difference H3 between the lowest position of the infrared light source 200 and the infrared detector 300 .
  • the height difference H3 between the lowest parts of the infrared light source 200 and the infrared detector 300 ranges from 2 mm to 10 mm.
  • the distance between the near-infrared light emitted by the infrared light source 200 and the user's finger is small, so that the near-infrared light emitted by the infrared light source 200 can be fully absorbed by the finger veins in the user's finger, and thus This makes the effect of the vein distribution image sensed by the finger vein sensor 000 better.
  • the finger vein distribution image sensed by the finger vein sensor 000 not only contains position information about the distribution of finger veins in the user's finger, but also contains depth information about the finger vein in the user's finger. In this way, the safety and accuracy of the finger vein distribution image sensed by the finger vein sensor 000 provided by the present application are greatly improved accordingly.
  • the side of the substrate 100 in the finger vein sensor 000 used to carry at least one infrared light source 200 and the infrared detector 300 is a concave arc surface, and the range of the arc ⁇ of the concave arc surface is: 10° to 60°.
  • the radius R corresponding to the arc concave surface may range from 5 cm to 20 cm.
  • FIG. 9 is a schematic diagram of the operation of another finger vein sensor provided by an embodiment of this application.
  • the included angle C1 between the optical axis of each light-emitting element (which can be the first light-emitting element 201 or the second light-emitting element 202 ) in the infrared light source 200 and the substrate 100 ranges from 30° to 90°.
  • the optical axis of the light-emitting element in the infrared light source 200 refers to the central axis of the near-infrared light beam emitted by the light-emitting element.
  • the near-infrared light beam emitted by the light-emitting element in the infrared light source 200 has a divergence angle C2.
  • the divergence angle C2 refers to the angle between the two near-infrared light beams at the outermost boundaries of the near-infrared light beams emitted by the light-emitting elements in the infrared light source 200 .
  • the near-infrared light emitted by the infrared light source 200 in the finger vein sensor 000 can be directed to the user's finger, ensuring that the finger is The vein sensor 000 can generate a finger vein image based on part of the near-infrared light reflected back from the user's finger.
  • the divergence angle C2 of the light-emitting element in the infrared light source 200 and the distance between the optical axis of the light-emitting element and the substrate 100 can be determined according to the shape of the substrate 100 in the finger vein sensor 000
  • the included angle C1 is adjusted so that the light emitted by the infrared light source 200 can be directed to the user's finger.
  • the embodiments of the present application do not limit this.
  • the infrared light source 200 in the finger vein sensor 000 can be adjusted according to the following relationship: the smaller the distance (h1, h2) between the infrared light source 200 and the sensing area 00a, the smaller the distance between the optical axis of the light-emitting element and the substrate 100
  • the larger the angle C1 is; the smaller the height difference H3 between the lowest point of the infrared light source 200 and the infrared detector 300 is, the larger the angle C1 between the optical axis of the light-emitting element and the substrate 100 is; the smaller the divergence angle C2 of the light-emitting element is.
  • the larger the angle C1 between the optical axis of the light-emitting element and the substrate 100 is, the more angles can be selected.
  • the angle C1 between the optical axis of the light-emitting element and the substrate 100 will have more angles that can be selected to adjust the infrared light source 200 in the finger vein sensor 000 .
  • the corresponding contents in the above embodiments which will not be described in detail in this application.
  • FIG. 10 is a schematic diagram of a film layer of an infrared detector provided by an embodiment of the present application.
  • the infrared detector 300 may include: a plurality of driving circuits 301 located on the substrate 100, a semiconductor layer 302 located on a side of the plurality of driving circuits 301 facing away from the substrate 100, and a transparent electrode located on a side of the semiconductor layer 302 facing away from the substrate 100.
  • Layer 303 is a schematic diagram of a film layer of an infrared detector provided by an embodiment of the present application.
  • the semiconductor layer 302 is electrically connected to the plurality of driving circuits 301 and the transparent electrode layer 303 respectively. In this way, after a bias voltage is applied to the transparent electrode layer 303, the semiconductor layer 302 in the finger vein sensor 000 is in a working state. In this way, when the user's finger is placed in the sensing area 00a of the finger vein sensor 000 and the infrared light source 200 emits near-infrared light, the semiconductor layer 302 senses part of the near-infrared light reflected from the user's finger, and the semiconductor layer 302 A photocurrent signal can be generated and stored in response to the received near-infrared light. Afterwards, the finger vein sensor 000 can apply a voltage to the gate 3022 in the driving circuit 301, so that the photocurrent signal can be derived from the driving circuit 301 in the form of an electrical signal.
  • each driving circuit 301 may include: a gate electrode 3011, a first electrode 3012, a second electrode 3013, an active layer 3014 and a transfer electrode 3015.
  • the gate electrode 3011, the first electrode 3012, the second electrode 3013 and the active layer 3014 can form a thin film transistor.
  • the first electrode 3012 and the second electrode 3013 are both overlapped with the active layer 3014.
  • the active layer 3014 is insulated from the gate electrode 3011.
  • the active layer 3014 and the gate electrode 3011 may be insulated by the gate insulating layer 3016.
  • the first electrode 3012 in the thin film transistor may be one of the source electrode and the drain electrode, and the second electrode 3013 may be the other of the source electrode and the drain electrode.
  • the transfer electrode 3015 in the driving circuit 301 is electrically connected to the second electrode 3013 in the thin film transistor.
  • the finger vein sensor 000 may further include a flat layer 400 located on a side of the thin film transistor away from the substrate 100, and the flat layer 400 has a plurality of openings V therein.
  • a part of the transfer electrode 3015 is located in the opening V and is electrically connected to the thin film transistor, and the other part of the transfer electrode 3015 is located on the side of the flat layer 400 away from the substrate 100 .
  • the semiconductor layer 302 is electrically connected to the thin film transistor in the driving circuit 301 through the transfer electrode 3015.
  • the orthographic projection of the thin film transistor on the substrate 100 is located within the orthographic projection of the transfer electrode 3015 on the substrate 100, and the transfer electrode 3015 is usually made of an opaque metal material. prepared. In this way, the transfer electrode 3015 can shield the active layer 3014 in the thin film transistor to prevent the active layer 3014 from shifting the voltage threshold when illuminated by interference light.
  • the transfer electrode 3015 is made of a metal material, during the manufacturing process of the infrared detector 300, in order to prevent the transfer electrode 3015 made of metal material from being oxidized, affecting the connection between the transfer electrode 3015 and The electrical connection effect of the semiconductor layer 302.
  • a protective electrode 3015a that is conductive and will not be oxidized is provided on the side of the transfer electrode 3015 away from the substrate 100, so that the transfer electrode 3015 is not easily oxidized.
  • the thickness of the flat layer 400 needs to be ensured to be relatively large.
  • the semiconductor layer 302 is a planar structure arranged as a whole layer, or the semiconductor layer 303 has a plurality of semiconductor blocks corresponding to the driving circuits 301 in a one-to-one manner, and the plurality of semiconductor blocks correspond to the driving circuits 301 in a one-to-one correspondence. connect.
  • the transparent electrode layer 303 is arranged as a whole layer.
  • the part of the semiconductor layer 302 that is electrically connected to each of the transfer electrodes 3015 is: a sensing unit of the semiconductor layer 302. That is, the part of the semiconductor layer 302 that is electrically connected to each of the transfer electrodes 3015 is: for The smallest unit that senses near-infrared light reflected from the user's finger.
  • Figure 11 is provided by the embodiment of the present application.
  • the infrared detector 300 may also include a pixel definition layer 304.
  • the pixel definition layer 304 may be located on a side of the planar layer 400 facing away from the substrate 100 .
  • the pixel definition layer 304 may have multiple pixel openings, and the multiple pixel openings may correspond to multiple semiconductor blocks 302a one-to-one, and each semiconductor block 302a may be located in a corresponding pixel opening.
  • a semiconductor block 302a electrically connected to the transfer electrode 3015 is a sensing unit of the semiconductor layer 302.
  • each semiconductor block 302a may respond to part of the near-infrared reflected from the user's finger.
  • each semiconductor block 302a will generate photogenerated carriers, and the pixel definition layer 304 can prevent crosstalk of the photogenerated carriers generated between two adjacent semiconductor blocks 302a, thereby effectively improving the efficiency of each of the infrared detectors 300.
  • FIG. 12 is a schematic diagram of a semiconductor layer provided in an embodiment of the present application.
  • the semiconductor layer 302 is composed of an electron transport layer 3021, a photoelectric conversion layer 3022 and a hole
  • the transmission layer 3023 is superposed to form a PIN structure.
  • the electron transport layer 3021 can be made of electron-rich materials such as zinc oxide and tin oxide
  • the hole transport layer 3023 can be made of hole-rich materials such as poly3,4-ethylenedioxythiophene/polystyrenesulfonate.
  • the photoelectric conversion layer 3022 may be a heterojunction structure formed by mixing a receptor semiconductor material and a donor semiconductor material.
  • the acceptor semiconductor material may be composed of a fullerene derivative
  • the donor semiconductor material may be composed of polythiophene-dionepyrrolopyrrole, poly3-ethylthiophene and oligothiophene and benzo[1,2-b: A component of 4,5-b']dithiophene.
  • the transparent electrode layer 303 in the infrared detector 300 can be indium tin oxide (English: Indium Tin Oxides; abbreviation: ITO), indium-doped zinc oxide (English: Indium-doped zinc oxide; abbreviation: IZO), A layered structure made of transparent conductive materials such as poly(3,4-ethylenedioxythiophene), a derivative of polythiophene (English: Poly(3,4-ethylenedioxythiophene); abbreviation: PEDOT) or silver nanowires.
  • ITO Indium Tin Oxides
  • IZO indium-doped zinc oxide
  • PEDOT Poly(3,4-ethylenedioxythiophene)
  • PEDOT silver nanowires
  • FIG. 13 is a schematic diagram of the film layer of another infrared detector provided by the embodiment of the present application.
  • the infrared detector 300 may further include: an encapsulation layer 305 located on a side of the semiconductor layer 302 facing away from the substrate 100, and an optical alignment layer 306 located on a side of the encapsulating layer 305 facing away from the substrate 100.
  • the encapsulation layer 305 is used to provide protection to the semiconductor layer 302 to prevent water and oxygen from corroding the semiconductor layer 302 .
  • the optical collimation layer 306 can allow the near-infrared light within a preset angle range among the partial near-infrared light reflected from the user's finger to pass through.
  • the preset angle range is: the included angle with the normal line of the optical alignment layer 306 is in the range of 5° to 10°.
  • the finger vein sensor 000 can prevent large-angle near-infrared light from radiating to the semiconductor layer 302 and causing interference to the semiconductor layer 302 .
  • the encapsulating layer 305 may be an encapsulating film composed of polyethylene terephthalate, or the encapsulating layer 305 may be an encapsulating film composed of a stack of silicon oxide, resin material, and silicon oxide. The embodiments of the present application do not limit this.
  • Figure 14 is a schematic structural diagram of an optical alignment layer provided by an embodiment of the present application
  • Figure 15 is a top view of an optical alignment layer provided by an embodiment of the present application.
  • the optical collimation layer 306 is composed of a plurality of collimation units 306a arranged in a honeycomb shape. The heights of the plurality of collimation units 306a are the same, and the side of the plurality of collimation units 306a facing away from the substrate 100 is coplanar.
  • the collimation unit 306a can be a plurality of cylinders, the side walls of the cylinders are made of light-absorbing material, and the cylinders of the cylinders are made of transparent materials. Made of clear material.
  • the collimating unit 306a may be an optical fiber wrapped with light-absorbing material.
  • the large-angle near-infrared rays in the part of the near-infrared rays reflected back from the user's fingers can be absorbed by the light-absorbing material of the side wall in the collimating unit 306a, so that the part of the near-infrared rays reflected back from the user's fingers can be absorbed
  • the near-infrared light within the preset range passes through the transparent material in the collimating unit 306a and is emitted to the semiconductor layer 302.
  • the thickness H4 of the optical alignment layer 306 ranges from 0.1 mm to 0.4 mm
  • the diameter r of each alignment unit 306a ranges from 4 ⁇ m to 80 ⁇ m.
  • Figure 16 is a schematic structural diagram of another optical alignment layer provided by an embodiment of the present application.
  • the optical alignment layer 306 is composed of a plurality of alignment units 306a arranged in an array.
  • Each collimation unit 306a may include: a convex lens 3061, a first light-absorbing structure 3062 and a second light-absorbing structure 3063.
  • the convex lens 3061 can collect part of the near-infrared light reflected from the user's finger into a collimating unit 306a.
  • the first light-absorbing structure 3062 can absorb large-angle near-infrared light in one collimation unit 306a and prevent crosstalk between near-infrared light in two adjacent collimation units 306a.
  • the second light-absorbing structure 3063 can absorb small-angle near-infrared light that does not conform to the preset range. In this way, after part of the near-infrared light reflected from the user's finger passes through the collimating unit 306a, only the small-angle near-infrared light that conforms to the preset range is emitted from the opening t and directed to the semiconductor layer 302.
  • the orthographic projection of at least one collimation unit 306a on the substrate 100 is located within the orthographic projection of the transfer electrode 3015 on the substrate 100. In this way, it is ensured that each sensing unit in the semiconductor layer 302 can sense part of the near-infrared light reflected from the user's finger.
  • the infrared detector 300 may also include: a filter film 307 .
  • the filter film 307 is located between the encapsulation layer 305 and the optical alignment layer 306 .
  • FIG. 17 is a schematic diagram of a film layer of yet another infrared detector provided by an embodiment of the present application.
  • the filter film 307 is located on the side of the optical collimation layer 306 facing away from the substrate 100, and the filter film 305 is used to filter light except infrared light. In this way, it can be ensured that the semiconductor layer 302 will not be interfered by ambient light, which is beneficial to improving the sensing effect of the finger vein sensor 000.
  • the filter film 307 can be any one of a black ink material, a reflective film, and a filter that only allows infrared light to pass through.
  • FIG. 18 is a schematic structural diagram of another finger vein sensor provided by an embodiment of this application.
  • the finger vein sensor 000 may further include: a sensing electrode 500 located on a side of the infrared detector 300 facing away from the substrate 100, and a controller 600 electrically connected to the sensing electrode 500, at least one infrared light source 200 and the infrared detector 300 respectively.
  • there are two sensing electrodes 500 .
  • both sensing electrodes 500 are in contact with the user.
  • the user's fingers are brought into contact so that a loop is formed between the two sensing electrodes 500 and the controller 600 .
  • the controller 600 can apply an electrical signal to the infrared light source 200 and the infrared detector 300 so that the infrared light source 200 and the infrared detector 300 can operate.
  • the sensing electrode 500 can also prevent static electricity from being generated in the finger vein sensor 000 and affecting the infrared light source 200 and the infrared detector 300 .
  • the driving circuit 301 and the transparent electrode 303 in the above embodiment are both electrically connected to the controller 600 .
  • the controller 600 may apply a bias voltage to the transparent electrode 303 and a driving voltage to the gate 3011 in the driving circuit 301 .
  • the finger vein sensor 000 may also include: a virtual sensing unit 700 located in a circle around the infrared detector 300.
  • the virtual sensing unit 700 is also electrically connected to the controller 600, and the virtual sensing unit 700 has The structure is the same as that of the sensing unit in the infrared detector 300 .
  • the controller 600 can process the finger vein information sensed by the infrared detector 300 according to the electrical signal generated by the virtual sensing unit 700, and remove the interference caused by the circuit itself, so that the finger vein sensor 000 senses The effect of finger vein image information is better.
  • a light-absorbing layer for absorbing near-infrared light can be provided on the side of the virtual sensing unit 700 facing away from the substrate.
  • the light-absorbing layer will only cover the virtual sensing unit 700 but not the infrared detector 300, so that The infrared detector 300 can still normally receive the near-infrared light reflected by the object to be measured, but the virtual sensing unit 700 will not receive the near-infrared light reflected by the object to be measured.
  • a finger vein sensor which includes: a substrate, an infrared light source and an infrared detector. Because the distance between the first light-emitting element in the infrared light source and the sensing area is smaller than the distance between the second light-emitting element in the infrared light source and the sensing area. Therefore, the near-infrared light emitted by the first light-emitting element will be emitted to the object to be detected in the sensing area through a short distance.
  • the distance between the knuckle of the user's finger and the first light-emitting element is small, and the near-infrared light emitted by the first light-emitting element can be directed to the knuckle after a short distance, so that The effect of the vein distribution image at the joint is better.
  • the distance between other parts of the user's fingers except the knuckles and the second light-emitting element is relatively large, which can ensure that the subsequent vein distribution image sensed by the finger vein sensor through the infrared light source is the vein distribution image at the middle finger joint of the user's finger. , and the difference between the vein distribution images of parts other than finger joints is small.
  • the thickness of the finger vein sensor provided by the embodiments of the present application is smaller, which facilitates the integration of the finger vein sensor and other components in an electronic device, making the electronic device integrating the finger vein sensor smaller in size.
  • An embodiment of the present application also provides an electronic device.
  • the electronic device may include: a housing, and a finger vein sensor 000 connected to the housing.
  • the finger vein sensor 000 is any one of the above finger vein sensors 000 .
  • the electronic device may be a medical device, a wearable device, and a device for identification and authentication.
  • the wearable device may be a smart watch, a smart bracelet, or a smart ring.
  • Figure 19 is a rendering of a wearable device worn by a user according to an embodiment of the present application. If the finger vein sensor is integrated into the wearable device, the wearable device has the ability to identify whether the user is an authorized user. function.
  • the wearable device can detect the user's finger vein image through the finger vein sensor 000, and determine whether the user is an authorized user based on the detected finger vein image.
  • the wearable device can enable the service function for the user to use; when the wearable device determines that the user is an unauthorized user, the wearable device can close the service function. , the user cannot use this wearable device normally.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
  • plurality refers to two or more than two, unless expressly limited otherwise.

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Abstract

L'invention concerne un capteur de veines des doigts (000) et un dispositif électronique. Le capteur de veines des doigts (000) est pourvu d'une zone de détection (00a) et d'une zone périphérique (00b) située autour de la zone de détection (00a), et comprend: un substrat (100), au moins une source de lumière infrarouge (200) située sur le substrat (100) et distribuée dans la zone périphérique (00b), et un détecteur infrarouge (300) situé sur le substrat (100) et distribué dans la zone de détection (00a). La source de lumière infrarouge (200) comprend: au moins un premier élément électroluminescent (201) et au moins deux seconds éléments électroluminescents (202) situés sur deux côtés dudit au moins un premier élément électroluminescent (201). La distance entre le premier élément électroluminescent (201) et la zone de détection (00a) est inférieure à la distance entre le second élément électroluminescent (202) et la zone de détection (00a). Étant donné que la distance entre le premier élément électroluminescent dans la source de lumière infrarouge (200) et la zone de détection (00a) est inférieure à la distance entre le second élément électroluminescent (202) dans la source de lumière infrarouge (200) et la zone de détection (00a), la lumière proche infrarouge émise par le premier élément électroluminescent (201) est transmise à une distance relativement courte vers un objet à détecter dans la zone de détection (00a). Lorsque ledit objet est un doigt d'un utilisateur, la distance entre une articulation de doigt dans le doigt de l'utilisateur et le premier élément électroluminescent (201) est relativement courte, et la lumière proche infrarouge émise par le premier élément électroluminescent (201) peut être transmise à la distance relativement courte à l'articulation de doigt, produisant ainsi une image de distribution de veine au niveau de l'articulation avec un bon effet. En outre, le capteur de veines de doigts a une faible épaisseur, ce qui est avantageux pour intégrer le capteur de veines de doigts et d'autres composants dans un dispositif électronique, permettant une taille compacte du dispositif électronique intégré au capteur de veines de doigts.
PCT/CN2023/087735 2022-04-18 2023-04-12 Capteur de veines des doigts et dispositif électronique WO2023202436A1 (fr)

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WO2024089687A2 (fr) * 2022-10-23 2024-05-02 Dymsense Ltd. Appareil d'analyse de composants sanguins
CN117111186A (zh) * 2023-04-10 2023-11-24 荣耀终端有限公司 透光结构及可穿戴设备

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