WO2023199793A1 - 検出装置 - Google Patents

検出装置 Download PDF

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Publication number
WO2023199793A1
WO2023199793A1 PCT/JP2023/013924 JP2023013924W WO2023199793A1 WO 2023199793 A1 WO2023199793 A1 WO 2023199793A1 JP 2023013924 W JP2023013924 W JP 2023013924W WO 2023199793 A1 WO2023199793 A1 WO 2023199793A1
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WO
WIPO (PCT)
Prior art keywords
optical sensor
electrode
sensor
upper electrode
detection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/013924
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English (en)
French (fr)
Japanese (ja)
Inventor
元 小出
卓 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to CN202380033183.4A priority Critical patent/CN118984677A/zh
Priority to JP2024514905A priority patent/JPWO2023199793A1/ja
Publication of WO2023199793A1 publication Critical patent/WO2023199793A1/ja
Priority to US18/907,714 priority patent/US12560982B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/163—Wearable computers, e.g. on a belt
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/02—Detecting, measuring or recording for evaluating the cardiovascular system, e.g. pulse, heart rate, blood pressure or blood flow
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/02—Detecting, measuring or recording for evaluating the cardiovascular system, e.g. pulse, heart rate, blood pressure or blood flow
    • A61B5/024—Measuring pulse rate or heart rate
    • A61B5/0245—Measuring pulse rate or heart rate by using sensing means generating electric signals, i.e. ECG signals
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/117—Identification of persons
    • A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/117—Identification of persons
    • A61B5/1171—Identification of persons based on the shapes or appearances of their bodies or parts thereof
    • A61B5/1172—Identification of persons based on the shapes or appearances of their bodies or parts thereof using fingerprinting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/49—Scattering, i.e. diffuse reflection within a body or fluid
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1635—Details related to the integration of battery packs and other power supplies such as fuel cells or integrated AC adapter
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1684—Constructional details or arrangements related to integrated I/O peripherals not covered by groups G06F1/1635 - G06F1/1675
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass

Definitions

  • the present invention relates to a detection device.
  • Optical sensors capable of detecting fingerprint patterns and vein patterns are known (for example, Patent Document 1).
  • sensors having a plurality of photodiodes each using an organic semiconductor material as an active layer are known.
  • the organic semiconductor material is arranged between the lower electrode and the upper electrode, and a signal line for outputting a detection signal to the detection circuit is electrically connected to the lower electrode of the photodiode.
  • An object of the present invention is to provide a detection device that can improve the accuracy of detecting light from a light source using a ring-shaped housing.
  • a detection device includes a ring-shaped housing, a light source provided in the housing, and a ring-shaped housing adjacent to one end of the light source in a circumferential direction of the housing.
  • a first optical sensor provided in the housing, and a second optical sensor provided in the housing so as to be adjacent to the other end of the light source in the circumferential direction of the housing;
  • the optical sensor is an organic photodiode having a sensor substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode.
  • FIG. 1 is a schematic diagram illustrating an example of the external appearance of the detection device according to the first embodiment when a finger is placed inside the detection device when viewed from the side of the housing.
  • FIG. 2 is a schematic cross-sectional view taken along the line AA shown in FIG.
  • FIG. 3 is a developed view showing an example of the development of the optical sensor of the detection device shown in FIG.
  • FIG. 4 is a configuration diagram showing an example of the configuration of the first optical sensor and the second optical sensor shown in FIG. 3.
  • FIG. 5 is a schematic cross-sectional view showing an example of the laminated structure of the optical sensor taken along the BB cross section shown in FIG.
  • FIG. 6 is a schematic cross-sectional view showing an example of the laminated structure of the optical sensor taken along the line CC shown in FIG.
  • FIG. 7 is a diagram for explaining the optical effect when a finger is housed inside the detection device according to the first embodiment.
  • FIG. 8 is a configuration diagram showing a configuration example of a first optical sensor and a second optical sensor according to Modification 1 of Embodiment 1.
  • FIG. 9 is a configuration diagram showing a configuration example of a first optical sensor and a second optical sensor according to a second modification of the first embodiment.
  • FIG. 10 is a configuration diagram showing a configuration example of the first optical sensor and the second optical sensor according to the third modification of the first embodiment.
  • FIG. 11 is a schematic cross-sectional view showing an example of the stacked structure of the first optical sensor shown in FIG. 10.
  • FIG. 12 is a configuration diagram showing a configuration example of a first optical sensor and a second optical sensor according to Modification Example 4 of Embodiment 1.
  • FIG. 13 is a configuration diagram showing a configuration example of a first optical sensor and a second optical sensor according to a fifth modification of the first embodiment.
  • FIG. 14 is a developed view showing an example of the development of the optical sensor of the detection device according to the second embodiment.
  • FIG. 15 is a schematic cross-sectional view taken along the line DD shown in FIG. 14.
  • FIG. 16 is a configuration diagram showing a configuration example of a first optical sensor and a second optical sensor according to a modification of the second embodiment.
  • FIG. 1 is a schematic diagram illustrating an example of the external appearance of the detection device according to the first embodiment when a finger is placed inside the detection device when viewed from the side of the housing.
  • FIG. 2 is a schematic cross-sectional view taken along the line AA shown in FIG.
  • FIG. 3 is a developed view showing an example of the development of the optical sensor of the detection device shown in FIG.
  • FIG. 4 is a configuration diagram showing an example of the configuration of the first optical sensor and the second optical sensor shown in FIG. 3.
  • FIG. 5 is a schematic cross-sectional view showing an example of the laminated structure of the optical sensor taken along the BB cross section shown in FIG.
  • FIG. 6 is a schematic cross-sectional view showing an example of the laminated structure of the optical sensor taken along the line CC shown in FIG.
  • the detection device 1 shown in FIG. 1 is a ring-shaped device that is detachable from the human body, and is attached to the finger Fg of the human body.
  • the fingers Fg include the thumb, index finger, middle finger, ring finger, little finger, and the like.
  • the human body is a person to be authenticated whose identity is verified by the detection device 1 .
  • the detection device 1 can detect biological information regarding a living body from the finger Fg attached.
  • the finger Fg is an example of a measurement target.
  • the measurement target is a living body or a part of a living body, and is a measuring object.
  • the detection device 1 is made into a ring or a wristband so that it can be easily carried by the user. In the following description, it is assumed that the detection device 1 is used as a ring.
  • the detection device 1 includes a housing 200, a light source 60, a first optical sensor 10A, and a second optical sensor 10B.
  • the detection device 1 is a device that includes a battery (not shown) inside a casing 200 and operates using power from the battery.
  • the housing 200 is formed in a ring shape that can be attached to a finger Fg, and is an attachment member that is attached to a living body.
  • the housing 200 includes a first housing 210 and a second housing 220.
  • the housing 200 is formed into a ring shape by integrating a first housing 210 and a second housing 220.
  • the first housing 210 is a member that comes into contact with the human body to which the housing 200 is attached.
  • the first housing 210 accommodates the light source 60, the first optical sensor 10A, the second optical sensor 10B, etc. therein.
  • the first housing 210 is formed into a ring shape using a housing material such as transparent synthetic resin or silicone, for example.
  • the second housing 220 has a surface of the housing 200 that covers the outer peripheral surface 210A of the first housing 210.
  • the second housing 220 is formed into a ring shape by, for example, a member such as metal or non-transparent synthetic resin.
  • the housing 200 accommodates inside the first housing 210 a flexible printed circuit board 70 on which a light source 60, a first optical sensor 10A, a second optical sensor 10B, etc. are mounted.
  • the flexible printed circuit board 70 is housed inside the casing 200 by, for example, forming the casing 200 by filling the periphery of the flexible printed circuit board 70 in a ring shape with a filling member in a mold.
  • the flexible printed circuit board 70 is formed into a deformable band shape, and is formed into a ring shape by connecting one end 71 and the other end 72.
  • the flexible printed circuit board 70 has a first mounting area 73 and a second mounting area 74.
  • the first mounting area 73 is an area where the light source 60 and the like are mounted.
  • the second mounting area 74 is an area where the control circuit 122, power supply circuit 123, etc. are mounted.
  • the sensor board 21 is mounted on the flexible printed circuit board 70 so as to straddle the vicinity of the light source 60 in the first mounting area 73 .
  • the flexible printed circuit board 70 electrically connects the light source 60, the first optical sensor 10A, the second optical sensor 10B, etc., and the control circuit 122.
  • each of the first optical sensor 10A and the second optical sensor 10B is provided so as to sandwich the light source 60 in the circumferential direction 200C. That is, in the detection device 1, the first optical sensor 10A, the light source 60, and the second optical sensor 10B are arranged in this order in the circumferential direction 200C. The first optical sensor 10A and the second optical sensor 10B are arranged to sandwich the light source 60 in the circumferential direction 200C, so that the light emitted by the light source 60 can be detected over a wide range of the housing 200.
  • the sensor substrate 21 is an insulating substrate, and is formed into a band shape of, for example, a film-like resin.
  • the sensor board 21 is a deformable board on which the first optical sensor 10A and the second optical sensor 10B are mounted. By being attached to the flexible printed circuit board 70, the sensor board 21 positions the first optical sensor 10A and the second optical sensor 10B on both sides of the light source 60 in the circumferential direction 200C of the housing 200.
  • the sensor substrate 21 has a first area 21A where the first optical sensor 10A is mounted, and a second area 21B where the second optical sensor 10B is mounted.
  • the sensor substrate 21 is formed as one substrate having a first region 21A and a second region 21B.
  • the flexible printed circuit board 70 is configured such that the surface on which the first optical sensor 10A, the second optical sensor 10B, and the light source 60 are mounted faces the inner circumferential surface 200B of the housing 200, as shown in FIG. , are housed inside the casing 200.
  • the first optical sensor 10A, the second optical sensor 10B, and the light source 60 may be mounted on the back surface opposite to the front surface.
  • the light source 60 may be arranged so that it emits light toward the flexible printed circuit board 70 and the light that has passed through the flexible printed circuit board 70 is emitted toward the outside of the housing 200.
  • the light source 60 is provided inside the first casing 210 of the casing 200, and is configured to be able to irradiate light toward the center of the casing 200.
  • the light source 60 for example, an inorganic LED (Light Emitting Diode) or an organic EL (OLED) is used.
  • the light source 60 emits light of a predetermined wavelength.
  • the light source 60 has a plurality of light sources capable of emitting near-infrared light, red light, and green light.
  • the light emitted from the light source 60 is reflected by the surface of the object to be detected, such as the finger Fg, and enters the first optical sensor 10A and the second optical sensor 10B.
  • the detection device 1 can detect a fingerprint by detecting the shape of the unevenness on the surface of the finger Fg or the like.
  • the light emitted from the light source 60 may be reflected inside the finger Fg or the like, or may be transmitted through the finger Fg or the like and enter the first optical sensor 10A and the second optical sensor 10B.
  • the detection device 1 can detect information regarding a living body inside the finger Fg or the like.
  • the information regarding the living body includes, for example, pulse waves of fingers and palms, pulses, blood vessel images, and the like. That is, the detection device 1 may be configured as a fingerprint detection device that detects a fingerprint or a vein detection device that detects blood vessel patterns such as veins.
  • the first optical sensor 10A and the second optical sensor 10B detects the light emitted by the light source 60 and reflected by the finger Fg, the directly incident light, etc.
  • the first optical sensor 10A and the second optical sensor 10B are organic photodiodes (OPDs).
  • OPDs organic photodiodes
  • the first optical sensor 10A is provided in the housing 200 so as to be adjacent to one end 61 of the light source 60 in the circumferential direction 200C of the housing 200.
  • the second optical sensor 10B is provided in the housing 200 so as to be adjacent to the other end 62 of the light source 60 in the circumferential direction 200C of the housing 200.
  • the first optical sensor 10A and the second optical sensor 10B have a photodiode PD (see FIG. 4) which is an organic photodiode.
  • Each of the first optical sensor 10A and the second optical sensor 10B has two lower electrodes 11 arranged along the circumferential direction 200C.
  • the first optical sensor 10A and the second optical sensor 10B are mounted on one sensor board 21 and electrically connected to the flexible printed circuit board 70 via the sensor board 21.
  • the sensor board 21 has a notch 22 between the first optical sensor 10A and the second optical sensor 10B in the circumferential direction 200C of the housing 200. Note that the notch portion 22 will be described later.
  • the first direction Dx is one direction within a plane parallel to the sensor substrate 21, and is the same direction as the circumferential direction 200C.
  • the second direction Dy is one direction within a plane parallel to the sensor substrate 21, and is a direction orthogonal to the first direction Dx. Note that the second direction Dy may not be perpendicular to the first direction Dx but may intersect with the first direction Dx.
  • the third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy.
  • the third direction Dz is the normal direction of the sensor substrate 21.
  • “planar view” refers to the positional relationship when viewed from a direction perpendicular to the sensor substrate 21.
  • the first photosensor 10A has a structure in which two lower electrodes 11 and one upper electrode 15A are stacked together in the first direction Dx.
  • the second optical sensor 10B has a structure in which two lower electrodes 11 arranged in the first direction Dx and one upper electrode 15B are stacked.
  • the upper electrode 15 includes an upper electrode 15A of the first optical sensor 10A and an upper electrode 15B of the second optical sensor 10B. Each of the upper electrode 15A and the upper electrode 15B covers the two lower electrodes 11 in plan view.
  • the upper electrode 15A and the upper electrode 15B are electrically connected by an electrode connecting portion 151.
  • the upper electrode 15A, the upper electrode 15B, and the electrode connecting portion 151 are integrally formed.
  • the sensor substrate 21 has a power supply electrode 211 extending along the second direction Dy.
  • the power supply electrode 211 is electrically connected to a connection part 212 (terminal part) of the sensor substrate 21, and a sensor power signal is supplied from the power supply circuit 123 (see FIG. 3) via the connection part 212.
  • the upper electrode 15 is electrically connected to the power supply electrode 211 by a conductive material 213.
  • the conductive material 213 is provided on the sensor substrate 21 so as to span the upper electrode 15 and the power supply electrode 211, and is made of a conductive material. Thereby, the upper electrode 15 is supplied with a sensor power signal from the power supply circuit 123 via the power supply electrode 211.
  • the first optical sensor 10A includes a sensor substrate 21 (first region 21A) and a photodiode PD.
  • the first optical sensor 10A further includes wiring 26 and an insulating layer 27.
  • the wiring 26 is provided on the top surface of the first region 21A.
  • the wiring 26 is a shield layer, and is formed of, for example, a metal wiring, and is formed of a material having better conductivity than the lower electrode 11 of the photodiode PD.
  • the wiring 26 is provided in a layer between the sensor substrate 21 and the photodiode PD in the third direction Dz.
  • the wiring 26 is electrically connected to the connecting portion 212 on the sensor board 21 (see FIG. 4). Note that the wiring 26 may be formed in the same layer as the lower electrode 11, or may be formed of metal, for example.
  • the insulating layer 27 is provided on the sensor substrate 21 so as to cover the wiring 26 .
  • the insulating layer 27 may be an inorganic insulating film or an organic insulating film.
  • the photodiode PD is provided on the insulating layer 27.
  • Photodiode PD includes a lower electrode 11, a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 (15A).
  • the photodiode PD includes a lower electrode 11, a lower buffer layer 12 (hole transport layer), an active layer 13, an upper buffer layer 14 (electron transport layer), and an upper electrode 15 in a third direction Dz perpendicular to the sensor substrate 21. Laminated in order.
  • the lower electrode 11 is an anode electrode of the photodiode PD, and is formed of a conductive material having light-transmitting properties, such as ITO (Indium Tin Oxide), for example.
  • the active layer 13 has characteristics (for example, voltage-current characteristics and resistance value) that change depending on the irradiated light.
  • An organic material is used as the material for the active layer 13.
  • the active layer 13 is a bulk heterostructure in which a p-type organic semiconductor and an n-type fullerene derivative (PCBM), which is an n-type organic semiconductor, coexist.
  • PCBM n-type fullerene derivative
  • low-molecular organic materials C60 (fullerene), PCBM (Phenyl C61-butyric acid methyl ester), CuPc (Copper Phthalocyanine), F16CuPc (fluorinated copper phthalocyanine) can be used.
  • rubrene 5,6,11,12-tetraphenyltetracene
  • PDI a derivative of Perylene
  • the active layer 13 can be formed using these low-molecular organic materials by vapor deposition (dry process).
  • the active layer 13 may be, for example, a laminated film of CuPc and F16CuPc, or a laminated film of rubrene and C60.
  • the active layer 13 can also be formed by a wet process.
  • the active layer 13 is made of a combination of the above-mentioned low-molecular organic material and high-molecular organic material.
  • the polymeric organic material for example, P3HT (poly(3-hexylthiophene)), F8BT (F8-alt-benzothiadiazole), etc. can be used.
  • the active layer 13 can be a film containing a mixture of P3HT and PCBM, or a film containing a mixture of F8BT and PDI.
  • the lower buffer layer 12 is a hole transport layer.
  • Upper buffer layer 14 is an electron transport layer.
  • the lower buffer layer 12 and the upper buffer layer 14 are provided so that holes and electrons generated in the active layer 13 can easily reach the lower electrode 11 or the upper electrode 15.
  • the lower buffer layer 12 (hole transport layer) is provided in direct contact with the lower electrode 11 and also in the region between adjacent lower electrodes 11 .
  • the active layer 13 is in direct contact with the top of the lower buffer layer 12 .
  • the material of the hole transport layer is a metal oxide layer. Tungsten oxide (WO 3 ), molybdenum oxide, or the like is used as the metal oxide layer.
  • the upper buffer layer 14 (electron transport layer) is in direct contact with the top of the active layer 13, and the top electrode 15 is in direct contact with the top of the top buffer layer 14.
  • Ethoxylated polyethyleneimine (PEIE) is used as the material for the electron transport layer.
  • the materials and manufacturing methods for the lower buffer layer 12, active layer 13, and upper buffer layer 14 are merely examples, and other materials and manufacturing methods may be used.
  • the lower buffer layer 12 and the upper buffer layer 14 are not limited to single-layer films, and may be formed as laminated films including an electron blocking layer and a hole blocking layer.
  • the upper electrode 15 is provided on the upper buffer layer 14.
  • the upper electrode 15 is a cathode electrode of the photodiode PD, and is continuously formed over the entire first optical sensor 10A and second optical sensor 10B. In other words, the upper electrode 15 is continuously provided on the plurality of photodiodes PD.
  • the upper electrode 15 faces the plurality of lower electrodes 11 with the lower buffer layer 12, the active layer 13, and the upper buffer layer 14 in between.
  • the upper electrode 15 is made of, for example, a light-transmitting conductive material such as ITO or IZO. A part of the end of the upper surface 150 of the upper electrode 15 is electrically connected to the conductive material 213 .
  • the first housing 210 is provided on the upper electrode 15 and the like, so that the photodiode PD is well sealed.
  • the second optical sensor 10B has the lower electrode 11 of the second optical sensor 10B in a second region 21B of the sensor substrate 21, which is different from the lower electrode 11 of the first optical sensor 10A. .
  • the lower electrode 11 is covered with a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 (15B).
  • the second optical sensor 10B includes a sensor substrate 21 (second region 21B), a photodiode PD, wiring 26, and an insulating layer 27.
  • the photodiode PD, wiring 26, and insulating layer 27 have the same configuration as the photodiode PD, wiring 26, and insulating layer 27 of the first photosensor 10A described above.
  • the photodiode PD of the second photosensor 10B includes a lower electrode 11, a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 (15B).
  • the first optical sensor 10A and the second optical sensor 10B are organic photodiodes.
  • the sensor substrate 21 has a first region 21A of the first optical sensor 10A and a second region 21B of the second optical sensor 10B, and is integrated into one common substrate. It has become.
  • the sensor substrate 21 has a notch 22 formed in the first direction Dx between the first region 21A of the first optical sensor 10A and the second region 21B of the second optical sensor 10B.
  • the sensor substrate 21 includes a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and a connecting portion 23 that is in contact with the notch 22 and between the first optical sensor 10A and the second optical sensor 10B. has.
  • the cutout portion 22 is formed at a distance L1 that is longer than the length of the light source 60 in the first direction Dx.
  • the cutout portion 22 is formed at a distance L2 that is longer than the length of the light source 60 and shorter than the length (width) of the sensor substrate 21 in the second direction Dy.
  • the cutout portion 22 is formed such that the distance between the center 22C and one side of the lower electrode 11 of the first optical sensor 10A and the lower electrode 11 of the second optical sensor 10B is equal in the first direction Dx. ing.
  • the sensor substrate 21 is integrally formed by connecting the first optical sensor 10A and the second optical sensor 10B at the connecting part 23 of the notch 22.
  • the lower buffer layer 12 , the active layer 13 , the upper buffer layer 14 , and the electrode connecting portion 151 of the upper electrode 15 are arranged in the connecting portion 23 .
  • the connecting portion 23 integrally forms the upper electrodes 15 of the first optical sensor 10A and the second optical sensor 10B.
  • the cutout portion 22 is formed in a shape that allows the light source 60 to be placed therein.
  • the cutout portion 22 is formed into a substantially rectangular shape in plan view, but may have a semicircular, triangular, polygonal, or other shape, for example.
  • the electrode connecting portion 151 is provided on the connecting portion 23 of the sensor substrate 21 so as to be stacked on the upper buffer layer 14 , the active layer 13 , and the lower buffer layer 12 .
  • the plurality of wiring lines 26 of the sensor board 21 are connected to the detection circuit 48 included in the control circuit 122 via the plurality of signal lines SL of the flexible printed circuit board 70.
  • the detection circuit 48 is electrically connected to the lower electrodes 11 of the first optical sensor 10A and the second optical sensor 10B via the plurality of signal lines SL.
  • the detection circuit 48 may be formed as a separate circuit from the control circuit 122.
  • the control circuit 122 is a circuit that supplies control signals to the plurality of photodiodes PD to control detection operations.
  • the plurality of photodiodes PD output electric signals corresponding to the light irradiated onto each photodiode to the detection circuit 48 as a detection signal Vdet.
  • the detection signals Vdet of the plurality of photodiodes PD are sequentially outputted to the detection circuit 48 in a time-sharing manner.
  • the plurality of signal lines SL are sequentially electrically connected to the detection circuit 48 in a time-division manner.
  • the detection device 1 detects information regarding the detected object based on the detection signals Vdet from the plurality of photodiodes PD.
  • the configuration example of the detection device 1 according to the present embodiment has been described above. Note that the above configuration described using FIGS. 1 to 6 is just an example, and the configuration of the detection device 1 according to the present embodiment is not limited to the example.
  • the configuration of the detection device 1 according to this embodiment can be flexibly modified according to specifications and operation.
  • FIG. 7 is a diagram for explaining the optical effect when a finger is housed inside the detection device according to the first embodiment.
  • FIG. 7 shows only a part of the first optical sensor 10A, second optical sensor 10B, light source 60, and first housing 210 of the detection device 1, and other configurations are omitted. are doing.
  • the detection device 1 is in a state where the inner peripheral surface 210B of the first housing 210 of the housing 200 is in contact with or close to the finger Fg.
  • the detection device 1 when the light source 60 is turned on, the light source 60 emits light toward the finger Fg.
  • the light source 60 irradiates light 60L1 on one side in the circumferential direction 200C, and irradiates light 60L2 on the other side in the circumferential direction 200C.
  • the first photosensor 10A receives the light 60L1 reflected by the finger Fg
  • the second photosensor 10B receives the light 60L2 reflected by the finger Fg.
  • the detection device 1 detects information regarding the living body of the finger Fg based on the amount of light received by each of the plurality of photodiodes PD of the first optical sensor 10A and the second optical sensor 10B.
  • the detection device 1 has the first optical sensor 10A adjacent to one end 61 of the light source 60 and the second optical sensor 10B adjacent to the other end 62 of the light source in the circumferential direction 200C of the housing 200. Since the light source 60L1 and the light 60L2 from the light source 60 can be detected.
  • the detection device 1 can detect with high precision by arranging an organic photodiode (OPD) with good light-receiving sensitivity at least at one end 61 of the light source 60. Thereby, the detection device 1 can receive more light in the circumferential direction 200C than if the optical sensor is disposed only on one side of the light source 60, so the amount of light received by the light source 60 can be increased. I can do it. As a result, the detection device 1 can improve the accuracy of detecting the light from the light source 60 using the ring-shaped housing 200.
  • OPD organic photodiode
  • the detection device 1 includes a flexible printed circuit board 70 provided with a first optical sensor 10A, a second optical sensor 10B, and a light source 60, and a housing 200 accommodates the flexible printed circuit board 70 inside.
  • the detection device 1 includes a flexible printed circuit board 70 in which the first optical sensor 10A is adjacent to one end 61 of the light source 60 and the second optical sensor 10B is adjacent to the other end 62 of the light source.
  • the detection device 1 can be manufactured by housing the detection device 200 inside the device 200 . Adjacent includes adjoining at a desired interval, adjoining in contact, and the like.
  • the first optical sensor 10A and the second optical sensor 10B are organic photodiodes. Thereby, the detection device 1 can detect the light 60L1 and the light 60L2 of the light source 60 with high precision.
  • a first optical sensor 10A and a second optical sensor 10B are formed on a sensor substrate 21, and are insulated from a lower electrode 11, a lower buffer layer 12, an active layer 13, an upper buffer layer 14, an upper electrode 15, and a wiring 26.
  • the structure has a layer 27.
  • the lower electrode 11 is electrically connected to the wiring 26, and the wiring 26 is electrically connected to the flexible printed circuit board 70.
  • the detection device 1 easily electrically connects the first optical sensor 10A and the second optical sensor 10B to the flexible printed circuit board 70 by mounting one sensor board 21 on the flexible printed circuit board 70. be able to.
  • the detection device 1 has a housing 200 such that the sensor substrate 21 has a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and the light source 60 is located in the notch 22 of the sensor substrate 21. It is set in. Thereby, the detection device 1 positions the light source 60 in the notch 22 of one sensor board 21, thereby making the first optical sensor 10A adjacent to one end 61 of the light source 60, and the second optical sensor 10B. can be placed adjacent to the other end 62 of the light source, thereby improving production efficiency.
  • the detection device 1 has a connecting portion 23 in which the sensor substrate 21 is in contact with the notch 22 and is between the first optical sensor 10A and the second optical sensor 10B, and the second optical sensor 10B is connected to the first optical sensor 10A.
  • the lower electrode 11 of the second optical sensor 10B is provided in a second region 21B of the sensor substrate 21, which is different from the lower electrode 11 of the second optical sensor 10B.
  • the lower buffer layer 12, the active layer 13, the upper buffer layer 14, and the upper electrode 15 (15A) are arranged in the connecting portion 23. Thereby, the detection device 1 only needs to supply power to the integrated upper electrode 15 for the two first optical sensors 10A and second optical sensors 10B arranged on both sides of the light source 60 in the circumferential direction 200C, so the configuration can be changed. It can be simplified.
  • FIG. 8 is a configuration diagram showing a configuration example of the first optical sensor 10A and the second optical sensor 10B according to the first modification of the first embodiment. Modification 1 of Embodiment 1 will be described in the case where the detection device 1 described above includes a first optical sensor 10A and a second optical sensor 10B mounted on a sensor substrate 21 shown in FIG. 8.
  • the first optical sensor 10A has a structure in which two lower electrodes 11 and one upper electrode 15A are stacked.
  • the second optical sensor 10B has a structure in which two lower electrodes 11 arranged in the first direction Dx and one upper electrode 15B are stacked.
  • the upper electrode 15 includes an upper electrode 15A of the first optical sensor 10A and an upper electrode 15B of the second optical sensor 10B, which are separated by the notch 22 of the sensor substrate 21.
  • the sensor substrate 21 includes a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and a connecting portion 23 that is in contact with the notch 22 and between the first optical sensor 10A and the second optical sensor 10B. has.
  • the second optical sensor 10B includes a lower electrode 11 of the second optical sensor 10B, a lower buffer layer 12, and an active It includes a layer 13, an upper buffer layer 14, and an upper electrode 15.
  • the sensor substrate 21 has a conductive material 214 formed on the connecting portion 23.
  • One end of the conductive material 214 covers the upper electrode 15 of the first optical sensor 10A and at least the side surface of the active layer 13 of the first optical sensor 10A, and the other end of the conductive material 214 covers the upper electrode 15 of the second optical sensor 10B. and covers at least the side surface of the active layer 13 of the second optical sensor 10B.
  • the conductive material 214 covers the side surfaces of the lower buffer layer 12, the active layer 13, and the upper buffer layer 14 of the first optical sensor 10A and the second optical sensor 10B.
  • the upper electrode 15A of the first optical sensor 10A and the upper electrode 15B of the second optical sensor 10B are electrically connected by a conductive material 214.
  • the first optical sensor 10A and the second optical sensor 10B are different from the above-described first embodiment in that the upper electrode 15A and the upper electrode 15B are separately formed on the sensor substrate 21. ing.
  • the upper electrode 15A and the upper electrode 15B are electrically connected by a conductive material 214.
  • a conductive material 214 is provided on the upper surface of the connecting portion 23 of the sensor substrate 21 so that the upper electrode 15A and the upper electrode 15B are electrically connected.
  • the conductive material 214 is made of a conductive material.
  • the upper electrodes 15 of the first optical sensor 10A and the second optical sensor 10B are connected to the upper electrode 15A (first electrode) and the upper electrode 15B (second The upper electrode 15A and the upper electrode 15B can be connected by a conductive material 214.
  • the detection device 1 can individually arrange the first optical sensor 10A and the second optical sensor 10B on both sides of the notch 22 of the sensor board 21 in the first direction Dx, so the first optical sensor It is possible to easily accommodate changes in the distance between the 10A and the second optical sensor 10B, etc.
  • FIG. 9 is a configuration diagram showing a configuration example of the first optical sensor 10A and the second optical sensor 10B according to the second modification of the first embodiment. Modification 2 of Embodiment 1 will be described in a case where the detection device 1 described above includes a first optical sensor 10A and a second optical sensor 10B mounted on a sensor substrate 21 shown in FIG. 9.
  • the first optical sensor 10A has a structure in which two lower electrodes 11 and one upper electrode 15A are stacked.
  • the second optical sensor 10B has a structure in which two lower electrodes 11 arranged in the first direction Dx and one upper electrode 15B are stacked.
  • the sensor substrate 21 includes a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and a connecting portion 23 that is in contact with the notch 22 and between the first optical sensor 10A and the second optical sensor 10B. has.
  • the second optical sensor 10B includes a lower electrode 11 of the second optical sensor 10B, a lower buffer layer 12, and an active It includes a layer 13, an upper buffer layer 14, and an upper electrode 15.
  • the sensor substrate 21 has a conductive electrode 215 formed on the connecting portion 23 and in the same layer as the lower electrode 11 of the first optical sensor 10A, and a conductive material 216 formed on both ends of the conductive electrode 215.
  • the conductive electrode 215 is made of a light-transmitting conductive material such as ITO, for example. Conductive electrode 215 supplies power from upper electrode 15A to upper electrode 15B. Note that the conductive electrode 215 may be formed on the sensor substrate 21 as a layer different from the lower electrode 11.
  • the conductive material 216 is made of a conductive material.
  • One conductive material 216 covers the upper electrode 15 of the first optical sensor 10A and at least the side surface of the active layer 13 of the first optical sensor 10A.
  • the other conductive material 216 covers the upper electrode 15 of the second optical sensor 10B and at least the side surface of the active layer 13 of the second optical sensor 10B.
  • the conductive material 216 covers the side surfaces of the lower buffer layer 12, the active layer 13, and the upper buffer layer 14 of the first optical sensor 10A and the second optical sensor 10B.
  • the upper electrode 15A of the first optical sensor 10A and the upper electrode 15B of the second optical sensor 10B are electrically connected by two conductive materials 216.
  • the first optical sensor 10A and the second optical sensor 10B are different from the above-described first embodiment in that the upper electrode 15A and the upper electrode 15B are separately formed on the sensor substrate 21. ing.
  • the detection device 1 separates the upper electrodes 15 of the first optical sensor 10A and the second optical sensor 10B into the upper electrode 15A and the upper electrode 15B at the notch 22 of the sensor substrate 21, and separates the upper electrode 15A and the upper electrode 15B.
  • the conductive electrode 215 can be electrically connected to the upper electrode 15B.
  • the detection device 1 can individually arrange the first optical sensor 10A and the second optical sensor 10B on both sides of the notch 22 of the sensor board 21 in the first direction Dx, so the first optical sensor It is possible to easily accommodate changes in the distance between the 10A and the second optical sensor 10B, etc.
  • FIG. 10 is a configuration diagram showing a configuration example of the first optical sensor 10A and the second optical sensor 10B according to the third modification of the first embodiment.
  • FIG. 11 is a schematic cross-sectional view showing an example of the stacked structure of the first optical sensor shown in FIG. 10. Modification 3 of Embodiment 1 will be described in a case where the above-mentioned detection device 1 includes a first optical sensor 10A and a second optical sensor 10B mounted on a sensor substrate 21 shown in FIG. 10.
  • the first optical sensor 10A has a structure in which two lower electrodes 11 and one upper electrode 15C are stacked.
  • the second optical sensor 10B has a structure in which two lower electrodes 11 arranged in the first direction Dx and one upper electrode 15B are stacked.
  • the sensor substrate 21 includes a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and a connecting portion 23 that is in contact with the notch 22 and between the first optical sensor 10A and the second optical sensor 10B. has.
  • the second optical sensor 10B has the lower electrode 11 of the second optical sensor 10B in a second region 21B of the sensor substrate 21, which is different from the lower electrode 11 of the first optical sensor 10A.
  • the lower electrode 11 is an organic photodiode covered with a lower buffer layer 12 , an active layer 13 , an upper buffer layer 14 , and an upper electrode 15 .
  • the sensor substrate 21 is in the same layer as the lower electrode 11 of the first photosensor 10A, and includes a power supply electrode 211 capable of supplying power.
  • the upper electrode 15 includes an upper electrode 15C of the first optical sensor 10A and an upper electrode 15B of the second optical sensor 10B, which are electrically connected by an electrode connecting part 152 at the notch 22 of the sensor substrate 21.
  • the upper electrode 15C, the upper electrode 15B, and the electrode connecting portion 152 are integrally formed.
  • the upper electrode 15C covers at least the side surface of the active layer 13 and the power supply electrode 211 of the first photosensor 10A.
  • the upper electrode 15C covers the side surfaces of the lower buffer layer 12, the active layer 13, the upper buffer layer 14, and the power supply electrode 211 of the first photosensor 10A.
  • a lower buffer layer 12, an active layer 13, an upper buffer layer 14, and an upper electrode 15 are laminated in this order.
  • the upper electrode 15C is provided in the first region 21A of the sensor substrate 21 so as to cover the two lower electrodes 11 and the power supply electrode 211 of the first optical sensor 10A, and is electrically connected to the power supply electrode 211.
  • the upper electrode 15C is a cathode electrode of the photodiode PD provided on the upper buffer layer 14, similar to the above-mentioned upper electrode 15A.
  • the upper electrode 15C is made of a light-transmitting conductive material such as ITO or IZO.
  • the electrode connecting portion 152 of the upper electrode 15 faces the insulating layer 27 with the lower buffer layer 12, the active layer 13, and the upper buffer layer 14 interposed therebetween.
  • the first optical sensor 10A and the second optical sensor 10B are integrally formed as one sensor.
  • the first housing 210 is provided on the upper electrode 15 and the like, so that the photodiode PD is well sealed.
  • the first optical sensor 10A and the second optical sensor 10B have the upper electrode 15C and the upper electrode 15B integrally formed, and the upper electrode 15C of the first optical sensor 10A is connected to the power source.
  • This embodiment differs from the first embodiment in that it is formed to cover the electrode 211.
  • the detection device 1 in the detection device 1, the upper electrode 15C of the first optical sensor 10A and the upper electrode 15B of the second optical sensor 10B are integrally formed on the sensor substrate 21, and the upper electrode 15C and the upper electrode 15B are connected to the power supply electrode. 211.
  • the detection device 1 can arrange the integrated first optical sensor 10A and the second optical sensor 10B on both sides of the notch 22 of the sensor board 21 in the first direction Dx, so the first optical sensor It is possible to easily accommodate changes in the distance between the 10A and the second optical sensor 10B, etc.
  • FIG. 12 is a configuration diagram showing a configuration example of the first optical sensor 10A and the second optical sensor 10B according to the fourth modification of the first embodiment. Modification 4 of Embodiment 1 will be described in a case where the detection device 1 described above includes a first optical sensor 10A and a second optical sensor 10B mounted on a sensor substrate 21 shown in FIG. 12.
  • the sensor board 21 has a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and is in contact with the notch 22, and is in contact with the notch 22 between the first optical sensor 10A and the second optical sensor 10B. It has a connecting part 23 located between.
  • the second optical sensor 10B includes a lower electrode 11 and a lower buffer layer 12 of the second optical sensor 10B, which are provided in a second region 21B of the sensor substrate 21 different from the lower electrode 11 of the first optical sensor 10A. It includes an active layer 13 and an upper buffer layer 14.
  • the upper electrode 15 of the first optical sensor 10A covers the connecting portion 23 and the upper buffer layer 14 of the second optical sensor 10B.
  • the upper electrodes 15 of the first optical sensor 10A and the second optical sensor 10B are integrally formed, and have an electrode connecting portion 153 between the first optical sensor 10A and the second optical sensor 10B.
  • the electrode connecting portion 153 faces the insulating layer 27 without sandwiching the lower buffer layer 12, active layer 13, and upper buffer layer 14 described above. That is, the first optical sensor 10A and the second optical sensor 10B are separately formed on the sensor substrate 21 as two sensors.
  • the first housing 210 is provided on the upper electrode 15 and the like, so that the photodiode PD is well sealed.
  • the first optical sensor 10A and the second optical sensor 10B are individually formed on the sensor substrate 21, and the upper electrode 15C of the first optical sensor 10A and the upper electrode 15B of the second optical sensor 10B.
  • the upper electrode 15C and the upper electrode 15B can be electrically connected to the power supply electrode 211.
  • the detection device 1 can arrange the individual first photosensor 10A and second photosensor 10B on both sides of the notch 22 of the sensor board 21 in the first direction Dx.
  • FIG. 13 is a configuration diagram showing a configuration example of the first optical sensor 10A and the second optical sensor 10B according to the fifth modification of the first embodiment.
  • the first optical sensor 10A and the second optical sensor 10B according to the fifth modification of the first embodiment shown in FIG. 13 are modified versions of the first optical sensor 10A and the second optical sensor 10B according to the fourth modification of the first embodiment. It is.
  • the sensor board 21 has a notch 22 between the first optical sensor 10A and the second optical sensor 10B, and is in contact with the notch 22, and is in contact with the notch 22 between the first optical sensor 10A and the second optical sensor 10B. It has a connecting part 23 located between.
  • the second optical sensor 10B includes a lower electrode 11 and a lower buffer layer 12 of the second optical sensor 10B, which are provided in a second region 21B of the sensor substrate 21 different from the lower electrode 11 of the first optical sensor 10A. It includes an active layer 13, an upper buffer layer 14, and an upper electrode 15C.
  • the sensor substrate 21 is formed in the connecting portion 23 and has a conductive electrode 215 in the same layer as the lower electrode 11 of the first optical sensor 10A.
  • the conductive electrode 215 is made of a light-transmitting conductive material such as ITO, for example.
  • the upper electrode 15C of the first optical sensor 10A is electrically connected to one end of the conductive electrode 215.
  • the upper electrode 15B of the second optical sensor 10B is electrically connected to the other end of the conductive electrode 215.
  • the upper electrode 15 includes an upper electrode 15C of the first optical sensor 10A and an upper electrode 15B of the second optical sensor 10B, which are separated by the notch 22 of the sensor substrate 21.
  • the first optical sensor 10A and the second optical sensor 10B have an upper electrode 15C and an upper electrode 15B formed individually.
  • Conductive electrode 215 supplies power from upper electrode 15C to upper electrode 15B.
  • the detection device 1 separates the upper electrodes 15 of the first optical sensor 10A and the second optical sensor 10B into the upper electrode 15C and the upper electrode 15B at the notch 22 of the sensor substrate 21, and separates the upper electrode 15C and the upper electrode 15B.
  • the conductive electrode 215 can be electrically connected to the upper electrode 15B.
  • the detection device 1 can individually arrange the first optical sensor 10A and the second optical sensor 10B on both sides of the notch 22 of the sensor substrate 21 in the first direction Dx.
  • FIG. 14 is a developed view showing an example of the development of the optical sensor of the detection device according to the second embodiment.
  • the detection device 1A shown in FIG. 14 includes a housing 200, a light source 60, a first optical sensor 10A, and a second optical sensor 10D. That is, the detection device 1A differs from the first embodiment in that it includes a second optical sensor 10D.
  • the detection device 1A is a device that operates using power from the power supply circuit 123.
  • the detection device 1A includes a flexible printed circuit board 70 on which a first optical sensor 10A and a second optical sensor 10D are mounted.
  • the flexible printed circuit board 70 is formed into a deformable band shape, and is formed into a ring shape by connecting one end 71 and the other end 72.
  • the flexible printed circuit board 70 has a first mounting area 73, a second mounting area 74, and a third mounting area 75.
  • the first mounting area 73 is an area where the light source 60 and the like are mounted.
  • the second mounting area 74 is an area where the control circuit 122, power supply circuit 123, etc. are mounted.
  • the third mounting area 75 is an area where the second optical sensor 10D and the like are mounted, and is provided on the other end 62 side of the light source 60. A predetermined interval is provided between the first mounting area 73 and the third mounting area 75.
  • the sensor board 21-1 is mounted on one end 61 side of the light source 60 in the first mounting area 73.
  • the flexible printed circuit board 70 electrically connects the light source 60, the first optical sensor 10A, the second optical sensor 10D, etc., and the control circuit 122.
  • each of the first optical sensor 10A and the second optical sensor 10D is provided so as to sandwich the light source 60 in the circumferential direction 200C. That is, in the detection device 1, the first optical sensor 10A, the light source 60, and the second optical sensor 10D are arranged in this order in the circumferential direction 200C. The first optical sensor 10A and the second optical sensor 10D are arranged to sandwich the light source 60 in the circumferential direction 200C, so that the light emitted by the light source 60 can be detected over a wide range of the housing 200.
  • the sensor substrate 21-1 is an insulating substrate, and is formed into a band shape of, for example, a film-like resin.
  • the sensor board 21-1 is a deformable board on which the first optical sensor 10A is mounted. By being attached to the flexible printed circuit board 70, the sensor board 21-1 positions the first optical sensor 10A on the one end 61 side of the light source 60 in the circumferential direction 200C of the housing 200.
  • the first optical sensor 10A is mounted on the sensor board 21-1.
  • the sensor substrate 21-1 has the same configuration as the first region 21A of the sensor substrate 21 of the first embodiment described above.
  • the second optical sensor 10D is a silicon photodiode, and is a detector that utilizes the internal photoelectric effect.
  • the second optical sensor 10D detects the light emitted by the light source 60 and reflected by the finger Fg, the directly incident light, etc.
  • the second optical sensor 10D is provided in the housing 200 so as to be adjacent to the other end 62 of the light source 60 in the circumferential direction 200C of the housing 200.
  • the first optical sensor 10A which is an organic photodiode, is provided in the housing 200 so as to be adjacent to one end 61 of the light source 60 in the circumferential direction 200C of the housing 200. ing.
  • FIG. 15 is a schematic cross-sectional view taken along the line DD shown in FIG. 14.
  • the second optical sensor 10D is a photodiode 30 and includes a plurality of partial photodiodes 30S.
  • the insulating film 322 and the insulating film 323 are provided on the lower conductive layer 335.
  • the connection wiring SLcn is connected to the gate line via a contact hole penetrating from the insulating film 322 to the insulating film 325.
  • the photodiode 30 is provided on the insulating film 323 , and the lower conductive layer 35 is provided between the sensor substrate 21 and the p-type semiconductor layer 33 .
  • the lower conductive layer 35 functions as a light shielding layer and can suppress light from entering the photodiode 30 from the sensor substrate 21 side.
  • the i-type semiconductor layer 31 is provided between the p-type semiconductor layer 33 and the n-type semiconductor layer 32.
  • a p-type semiconductor layer 33 , an i-type semiconductor layer 31 , and an n-type semiconductor layer 32 are stacked in this order on the insulating film 323 .
  • the p-type semiconductor layer 33 is provided on the insulating film 323.
  • Insulating films 324, 325, and 326 are provided to cover p-type semiconductor layer 33.
  • a contact hole H13 is provided in the insulating film 324 and the insulating film 325 at a position overlapping with the p-type semiconductor layer 33.
  • the insulating film 326 covers the side surfaces of the insulating film 324 and the insulating film 325 that constitute the inner wall of the contact hole H13.
  • a contact hole H14 is provided in the insulating film 326 at a position overlapping with the p-type semiconductor layer 33.
  • the i-type semiconductor layer 31 is provided on the insulating film 326 and connected to the p-type semiconductor layer 33 via a contact hole H14 penetrating from the insulating film 324 to the insulating film 326.
  • the n-type semiconductor layer 32 is provided on the i-type semiconductor layer 31.
  • the insulating layer 327 is provided on the insulating film 326 to cover the photodiode 30.
  • the insulating layer 327 is provided in direct contact with the photodiode 30 and the insulating film 326.
  • the insulating layer 327 is made of an organic material such as photosensitive acrylic.
  • the insulating layer 327 is thicker than the insulating film 326.
  • the insulating layer 327 has better step coverage than an inorganic insulating material, and is provided to cover the side surfaces of the i-type semiconductor layer 31 and the n-type semiconductor layer 32.
  • the upper conductive layer 34 is provided on the insulating layer 327.
  • the upper conductive layer 34 is made of a light-transmitting conductive material such as ITO (Indium Tin Oxide).
  • the upper conductive layer 34 is provided along the surface of the insulating layer 327 and is connected to the n-type semiconductor layer 32 via a contact hole H1 provided in the insulating layer 327.
  • the insulating film 328 is provided on the insulating layer 327, covering the upper conductive layer 34.
  • the insulating film 328 is an inorganic insulating film.
  • the insulating film 328 is provided as a protective layer that prevents moisture from entering the photodiode 30.
  • Superimposed conductive layer 36 is provided on insulating film 28 .
  • the superimposed conductive layer 36 is made of a light-transmitting conductive material such as ITO. Note that the superimposed conductive layer 36 may not be provided.
  • a protective film 329 is provided on the insulating film 328, covering the superimposed conductive layer 36.
  • the protective film 329 is an organic protective film.
  • the protective film 329 is formed to flatten the surface of the detection device 1.
  • the optical filter 7 is provided on the protective film 329.
  • the cross-sectional configuration of the photodiode 30 shown in FIG. 15 is just an example.
  • the photodiode 30 may be provided in a different layer from each transistor, and the photodiode 30 may be provided in a layer different from that of each transistor, and a p-type semiconductor layer 33, an i-type semiconductor layer 31, and an n-type semiconductor layer 32 are provided on the insulating film 326. They may be provided in a stacked manner.
  • the light emitted from the light source 60 is reflected by the surface of the object to be detected, such as the finger Fg, and enters the first optical sensor 10A and the second optical sensor 10D.
  • the detection device 1A can detect a fingerprint by detecting the shape of the unevenness on the surface of the finger Fg or the like.
  • the light emitted from the light source 60 may be reflected inside the finger Fg or the like, or may be transmitted through the finger Fg or the like and enter the plurality of photodiodes PD.
  • the detection device 1A can detect information regarding a living body inside the finger Fg or the like.
  • the first optical sensor 10A which is an organic photodiode
  • the detection device 1A uses a silicon photodiode as the second photosensor 10D, so that when the measurement with the first photosensor 10A is not preferable, the detection device 1A switches to the second photosensor 10D or uses the second photosensor 10D. Measurement can be performed using only the sensor 10D. Thereby, the detection device 1A can suppress the influence of noise and detect information regarding a living body by combining an organic photodiode and a silicon photodiode.
  • FIG. 16 is a configuration diagram showing a configuration example of a first optical sensor 10A-1 and a second optical sensor 10D according to a modification of the second embodiment.
  • the detection device 1A shown in FIG. 16 is a modification of the detection device 1A shown in FIG. 14, and differs in the configuration of the first optical sensor 10A-1.
  • the first optical sensor 10A-1 has a structure in which eight lower electrodes 11 and one upper electrode 15A are stacked, and the first optical sensor 10A is different from the first optical sensor 10A described above.
  • the numbers are different. In this embodiment, a case will be described in which the first optical sensor 10A-1 is increased from two lower electrodes 11 in the first embodiment to eight, but the number of lower electrodes 11 is not limited to this.
  • the sensor board 21-2 is mounted on one end 61 side of the light source 60 in the first mounting area 73.
  • the flexible printed circuit board 70 electrically connects the light source 60, the first optical sensor 10A, the second optical sensor 10D, etc., and the control circuit 122.
  • each of the first optical sensor 10A-1 and the second optical sensor 10D is provided so as to sandwich the light source 60 in the circumferential direction 200C. That is, in the detection device 1A, the first optical sensor 10A-1, the light source 60, and the second optical sensor 10D are arranged in this order in the circumferential direction 200C. The first optical sensor 10A-1 and the second optical sensor 10D are arranged to sandwich the light source 60 in the circumferential direction 200C, so that the light emitted by the light source 60 can be detected over a wide range of the housing 200. There is.
  • the sensor substrate 21-2 is an insulating substrate, and is formed into a band shape of, for example, a film-like resin.
  • the sensor board 21-2 is a deformable board on which the first optical sensor 10A is mounted.
  • the end of the sensor board 21-2 near the connection portion 212 is attached to the flexible printed circuit board 70.
  • the sensor board 21-2 is positioned and mounted in the mounting area 76 of the flexible printed circuit board 70.
  • the sensor substrate 21-2 arranges eight lower electrodes 11 in the circumferential direction 200C, and the first optical sensor 10A-1 arranges the two lower electrodes 11 in the circumferential direction 200C. It is possible to detect a wider range of light than the first optical sensor 10A.
  • the detection device 1A positions the first optical sensor 10A-1 on one end 61 side of the light source 60, and positions the second optical sensor 10D on the other end 62 side of the light source 60. It is positioned in
  • the light emitted from the light source 60 is reflected by the surface of the object to be detected, such as the finger Fg, and enters the first optical sensor 10A-1 and the second optical sensor 10D.
  • the detection device 1A can detect a fingerprint by detecting the shape of the unevenness on the surface of the finger Fg or the like.
  • the light emitted from the light source 60 may be reflected inside the finger Fg or the like, or may be transmitted through the finger Fg or the like and enter the plurality of photodiodes PD.
  • the detection device 1A can detect information regarding the internal living body, such as the finger Fg, with high accuracy.
  • the detection device 1A can arrange the upper electrodes 15 of the first optical sensor 10A-1 and the second optical sensor 10D on both sides of the light source 60.
  • the first optical sensor 10-1 can be disposed over a wide range in the circumferential direction 200C of the housing 200, so even if the attachment position and attachment state of the finger Fg change, the first optical sensor 10-1 The amount of light can be detected with high precision by the sensor 10A-1 and the second optical sensor 10D.
  • the control circuit 122 of the detection device 1A may detect information regarding an internal living body such as the finger Fg using the first optical sensor 10A-1 and the second optical sensor 10D.
  • the sensor 10A-1 and the second optical sensor 10D may be used by switching.
  • the control circuit 122 may detect the amount of light by alternately using the first optical sensor 10A-1 and the second optical sensor 10D, and determine the sensor to be used for detection based on the amount of light.

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WO2024214624A1 (ja) * 2023-04-12 2024-10-17 株式会社ジャパンディスプレイ 検出装置
WO2025110058A1 (ja) * 2023-11-22 2025-05-30 株式会社ジャパンディスプレイ 検出装置
WO2025110083A1 (ja) * 2023-11-21 2025-05-30 株式会社ジャパンディスプレイ 検出装置
WO2025127063A1 (ja) * 2023-12-13 2025-06-19 株式会社ジャパンディスプレイ 健康管理システム
WO2025253946A1 (ja) * 2024-06-03 2025-12-11 株式会社ジャパンディスプレイ 検出装置の製造方法
WO2026034320A1 (ja) * 2024-08-09 2026-02-12 株式会社ジャパンディスプレイ 検出装置
WO2026034352A1 (ja) * 2024-08-09 2026-02-12 株式会社ジャパンディスプレイ 検出装置

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JP7780628B2 (ja) 2022-04-05 2025-12-04 株式会社ジャパンディスプレイ 検出装置
JP7720992B2 (ja) * 2022-04-05 2025-08-08 株式会社ジャパンディスプレイ 検出装置

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JP2007330708A (ja) * 2006-06-19 2007-12-27 Sharp Corp 酸素飽和度計測装置、酸素飽和度計測装置の制御プログラム、および酸素飽和度計測装置の制御プログラムが記録された記録媒体
US20200052216A1 (en) * 2016-10-05 2020-02-13 Merck Patent Gmbh Organic photodetector
WO2021124749A1 (ja) * 2019-12-19 2021-06-24 ソニーグループ株式会社 生体情報測定装置及び生体情報測定方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024214624A1 (ja) * 2023-04-12 2024-10-17 株式会社ジャパンディスプレイ 検出装置
WO2025110083A1 (ja) * 2023-11-21 2025-05-30 株式会社ジャパンディスプレイ 検出装置
WO2025110058A1 (ja) * 2023-11-22 2025-05-30 株式会社ジャパンディスプレイ 検出装置
WO2025127063A1 (ja) * 2023-12-13 2025-06-19 株式会社ジャパンディスプレイ 健康管理システム
WO2025253946A1 (ja) * 2024-06-03 2025-12-11 株式会社ジャパンディスプレイ 検出装置の製造方法
WO2026034320A1 (ja) * 2024-08-09 2026-02-12 株式会社ジャパンディスプレイ 検出装置
WO2026034352A1 (ja) * 2024-08-09 2026-02-12 株式会社ジャパンディスプレイ 検出装置

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US20250028370A1 (en) 2025-01-23
US12560982B2 (en) 2026-02-24
CN118984677A (zh) 2024-11-19

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