WO2023198287A1 - An orthomode transducer arrangement - Google Patents

An orthomode transducer arrangement Download PDF

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Publication number
WO2023198287A1
WO2023198287A1 PCT/EP2022/059932 EP2022059932W WO2023198287A1 WO 2023198287 A1 WO2023198287 A1 WO 2023198287A1 EP 2022059932 W EP2022059932 W EP 2022059932W WO 2023198287 A1 WO2023198287 A1 WO 2023198287A1
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WO
WIPO (PCT)
Prior art keywords
waveguide
layer
probe
conductor
waveguide conductor
Prior art date
Application number
PCT/EP2022/059932
Other languages
French (fr)
Inventor
Klas Eriksson
Original Assignee
Telefonaktiebolaget Lm Ericsson (Publ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget Lm Ericsson (Publ) filed Critical Telefonaktiebolaget Lm Ericsson (Publ)
Priority to PCT/EP2022/059932 priority Critical patent/WO2023198287A1/en
Publication of WO2023198287A1 publication Critical patent/WO2023198287A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
    • H01P1/161—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion sustaining two independent orthogonal modes, e.g. orthomode transducer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced with unbalanced lines or devices
    • H01P5/107—Hollow-waveguide/strip-line transitions

Definitions

  • the present disclosure relates to an orthomode transducer (OMT) arrangement formed in a multilayer structure and comprising a common port comprised in a common waveguide conductor, a first waveguide port and a second waveguide port.
  • OMT orthomode transducer
  • waveguides are used for transporting wireless signals, due to the low losses incurred in a waveguide.
  • waveguides are used to connect microwave radios to antenna waveguide ports.
  • dual polarization i.e. horizontal and vertical
  • OMT orthomode transducer
  • OMTs e.g. waveguide side-coupled OMT, Bbifot and other OMTs using a septum, and a so-called turnstile junction OMT.
  • the advantage with the turnstile junction OMT is that it has full mechanical and electrical symmetry between the two polarizations.
  • the necessary waveguide arrangement for the turnstile junction OMT results in a very complex mechanical structure.
  • the turnstile junction requires a pyramidal or conical post in order to have a decent transition between the common port and the other four ports.
  • turnstile junction OMT uses a dielectric substrate with planar transmission lines, e.g. microstrip, and four orthogonal probes to connect to the common waveguide port.
  • planar transmission lines e.g. microstrip
  • orthogonal probes to connect to the common waveguide port.
  • Other OMTs with a more planar geometry can be based on substrate integrated waveguides (SIW), as for example disclosed in “A Fully Planar Substrate Integrated Probe-Based Wideband Orthomode Transducer” (Uros Jankovic, Djuradj Budimir) where one major drawback is the significant losses in the substrate materials, especially at higher frequencies, for example beyond 130 GHz, but also at lower frequencies.
  • SIW substrate integrated waveguides
  • an orthomode transducer (OMT) arrangement formed in a multilayer structure and comprising a common port comprised in a common waveguide conductor, a first waveguide port and a second waveguide port.
  • the first waveguide port is connected to the common port via a first waveguide conductor that propagates in a first layer and a second waveguide conductor that propagates in a second layer, separated from the first layer, and via the common waveguide conductor.
  • the first waveguide conductor and the second waveguide conductor are electrically connected to the common waveguide conductor via a first probe transition comprising a first probe and a second probe transition comprising a second probe.
  • the first probe and the second probe enter the common waveguide conductor radially from opposite entering directions.
  • the second waveguide port is connected to the common port via a third waveguide conductor that propagates in the first layer and a fourth waveguide conductor that propagates in the second layer, and via the common waveguide conductor.
  • the third waveguide conductor and the fourth waveguide conductor are electrically connected to the common waveguide conductor via a third probe transition comprising a third probe and a fourth probe transition comprising a fourth probe.
  • the third probe and the fourth probe enter the common waveguide conductor radially from opposite entering directions that are perpendicular to the entering directions of the first probe and the second probe.
  • the first waveguide conductor and the second waveguide conductor are electrically separated by an intermediate third layer, and the third waveguide conductor and the fourth waveguide conductor are electrically separated by the third layer, the third layer at least partly separating the first layer and the second layer.
  • the OMT arrangement can be formed as a very compact unit in a form of a planar structure that is easily assembled and handled, and which can cover an entire waveguide frequency band, e.g., the W- or D-band and at the same time be relatively small. Furthermore, this also means that the OMT arrangement can be comprised in a larger planar structure that comprises further components such as diplexers, filters, transitions etc., as well as electronic components such as amplifiers.
  • waveguides with air as a conductive medium in the OMT arrangement reduces the loss compared to OMTs formed by means of planar transmission lines and SIW structures.
  • the waveguide interface also simplifies connection with waveguide-based diplexer filters.
  • the third layer comprises a dielectric carrier material having a first main side metallization and a second main side metallization.
  • the first probe and the third probe are formed in the first main side metallization, and the second probe and the fourth probe are formed in the second main side metallization.
  • the third layer is used to mechanically support the probes, for electrically isolating the waveguide conductors that run in different levels in the multilayer structure, and for splitting the waveguide ports of each polarization into two waveguide conductors.
  • the OMT arrangement further comprises a fourth layer and a fifth layer.
  • the first waveguide conductor and the third waveguide conductor run between the first main side metallization and the fourth layer, and the second waveguide conductor and the fourth waveguide conductor run between the second main side metallization and the fifth layer.
  • the common waveguide conductor comprises a first part in the fourth layer, a second part in the first layer, a third part in the second layer and a fourth part in the fifth layer.
  • the fourth part comprises the common port.
  • the common waveguide conductor is formed in several layers, which is needed for the probe transitions between the common waveguide conductor and the other waveguide conductors
  • the OMT arrangement further comprises a sixth layer that is adapted to terminate the first part of the common waveguide conductor that is opposite the common port. In this way, the common waveguide conductor is shorted at end that is opposite the common port.
  • all layers run parallel to an H-plane for the first waveguide conductor, the second waveguide conductor, the third waveguide conductor and the fourth waveguide conductor.
  • the OMT arrangement can be formed as a very compact unit in a form of a planar structure that is easily assembled and handled,
  • each first probe transition comprises a corresponding tapered transition part and co-planar waveguide part, which parts are formed in a corresponding main side metallization.
  • Each planar waveguide part is connected to a corresponding probe.
  • each tapered transition part and co-planar waveguide part are at least partly positioned adjacent a corresponding cavity positioned on a side of the dielectric carrier material that faces away from the main side metallization that comprises the corresponding tapered transition parts and co-planar waveguide parts.
  • At least two layers are formed in metallized substrates. According to some further aspects, at least two layers are formed in metal. This means that the layers can be manufactured in a cost-effective and reliable manner using well-known processes.
  • Figure 1 shows a schematic see-through perspective view of an OMT arrangement
  • Figure 2 shows a schematic simplified top view of the OMT arrangement
  • Figure 3 shows a first section of Figure 2
  • Figure 4 shows a second section of Figure 2
  • Figure 5 shows an enlarged part of Figure 1
  • Figure 6 shows an enlarged part of Figure 1 in a different perspective
  • Figure 7 shows a sixth layer
  • Figure 8 shows a fourth layer
  • Figure 9 shows a first layer
  • Figure 10 shows a third layer seen towards a first main side metallization
  • Figure 11 shows the third layer seen towards a second main side metallization
  • Figure 12 shows a second layer
  • Figure 13 shows a fifth layer
  • Figure 14 shows a flowchart for methods according to the present disclosure.
  • Figure 1 shows a schematic see-through perspective view of an OMT arrangement
  • Figure 2 shows a schematic simplified top view of the OMT arrangement
  • Figure 3 shows a first section of Figure 2
  • Figure 4 that shows a second section of Figure 2
  • Figure 5 shows an enlarged part of Figure 1
  • Figure 6 that shows an enlarged part of Figure 1 in a different perspective than Figure 5.
  • an orthomode transducer, OMT arrangement 100 formed in a multilayer structure 117 and comprising a common port 101 comprised in a common waveguide conductor 102, a first waveguide port 103 and a second waveguide port 104.
  • the common port 101 is a circular common port or a square common port, and where the common waveguide conductor 102 is a circular waveguide conductor or a square waveguide conductor.
  • the common port 101 is adapted to be connected to a waveguide device 133, such as for example a continuing waveguide conductor that is adapted to form a continuation of the common waveguide conductor 102.
  • the first waveguide port 103 is connected to the common port 101 via a first waveguide conductor 105 that propagates in a first layer LI and a second waveguide conductor 106 that propagates in a second layer L2, separated from the first layer LI, and via the common waveguide conductor 102.
  • the first waveguide conductor 105 and the second waveguide conductor 106 are electrically connected to the common waveguide conductor 102 via a first probe transition 107 comprising a first probe 109 and a second probe transition 108 comprising a second probe 110.
  • the first probe 109 and the second probe 110 enter the common waveguide conductor 102 radially from opposite entering directions.
  • the second waveguide port 104 is connected to the common port 101 via a third waveguide conductor 111 that propagates in the first layer LI and a fourth waveguide conductor 112 that propagates in the second layer L2, and via the common waveguide conductor 102.
  • first waveguide conductor 105 and the third waveguide conductor 111 are at least partly formed in the first layer LI, the first layer LI comprising electrically conducting walls that at partly electrically enclose the first waveguide conductor 105 and the second waveguide conductor 111.
  • the second waveguide conductor 106 and the fourth waveguide conductor 112 are at least partly formed in the second layer L2, the second layer L2 comprising electrically conducting walls that at partly electrically enclose the second waveguide conductor 106 and the fourth waveguide conductor 112.
  • the first layer LI and the second layer L2 are formed in a piece of metal, or, alternatively, formed in an at least partly metalized non-conducting material such as a dielectric material.
  • material is removed from the first layer LI and the second layer L2 such that the first waveguide conductor 105, the second waveguide conductor 106, the third waveguide conductor 111 and the fourth waveguide conductor 112 are formed as tracks in the first layer LI and the second layer L2.
  • the third waveguide conductor 111 and the fourth waveguide conductor 112 are electrically connected to the common waveguide conductor 102 via a third probe transition 113 comprising a third probe 115 and a fourth probe transition 114 comprising a fourth probe 116.
  • the third probe 115 and the fourth probe 116 enter the common waveguide conductor 102 radially from opposite entering directions that are perpendicular to the entering directions of the first probe 109 and the second probe 110.
  • the first waveguide port 103, the second waveguide port 104, and the waveguide conductors 105, 106; 111, 112 all have a rectangular cross-section.
  • the first waveguide conductor 105 and the second waveguide conductor 106 are electrically separated by an intermediate third layer L3, and the third waveguide conductor 111 and the fourth waveguide conductor 112 are electrically separated by the third layer L3, the third layer L3 at least partly separating the first layer LI and the second layer L2.
  • first waveguide port 103 and the second waveguide port 104 which are fullheight rectangular waveguides, both are split by the third layer L3 into two respective waveguide conductors 105, 106; 111, 112 with reduced height.
  • the third layer L3 isolates the second waveguide conductor 106 from the third waveguide conductor 111 such that they can cross each other without interference.
  • the electrical field E is indicated at the first waveguide port 103 split.
  • the third layer L3 comprises a dielectric carrier material 118 having a first main side metallization 119 and a second main side metallization 120, where the first probe 109 and the third probe 115 are formed in the first main side metallization 119, and where the second probe 110 and the fourth probe 116 are formed in the second main side metallization 120.
  • This is for example shown for the first probe 109 and the second probe 110 in Figure 4.
  • the probes 109, 110, 115, 116 that feed the common port and the common waveguide conductor 102 are supported by the dielectric carrier material 118 that extends over the common port 101.
  • the third layer L3 can be in the form of a printed circuit board (PCB).
  • the third layer L3 has a triple function: it is used to mechanically support the probes 109, 110, 115, 116, for electrically isolating the waveguide conductors that run in different levels in the multilayer structure 117, and for splitting the waveguide ports 103, 104 of each polarization into two waveguide conductors 105, 106; 111, 112 each.
  • the OMT arrangement 100 further comprises a fourth layer L4 and a fifth layer L5, where the first waveguide conductor 105 and the third waveguide conductor 111 run between the first main side metallization 119 and the fourth layer L4, and where the second waveguide conductor 106 and the fourth waveguide conductor 112 run between the second main side metallization 120 and the fifth layer L5.
  • first waveguide conductor 105 and the third waveguide conductor 111 are at least mainly electrically enclosed by electrically conducting walls formed in the first layer LI, the fourth layer L4 and the first main side metallization 119.
  • second waveguide conductor 106 and the fourth waveguide conductor 112 are at least mainly electrically enclosed by electrically conducting walls formed in the second layer L2, the fifth layer L5 and the second main side metallization 120.
  • At least two layers LI, L2, L3, L4, L5, L6 are formed in metallized substrates, and according to some further aspects, at least two layers LI, L2, L4, L5, L6 are formed in metal.
  • the common waveguide conductor 102 comprises a first part 102a in the fourth layer L4, a second part 102b in the first layer LI, a third part 102c in the second layer L2 and a fourth part 102d in the fifth layer L4, where the fourth part 102d comprises the common port 101.
  • the common waveguide conductor 102 is formed in several layers, which is needed for the probe transitions 107, 113 between the common waveguide conductor 102 and the other waveguide conductors 105, 106; 111, 112.
  • the OMT arrangement 100 further comprises a sixth layer L6 that is adapted to terminate the first part 102a of the common waveguide conductor 102 that is opposite the common port 101. In this way, the common waveguide conductor 102 is shorted at end that is opposite the common port 101.
  • all layers LI, L2, L3, L4, L5, L6 run parallel to an H-plane (schematically indicated in Figure 1) for the first waveguide conductor 105, the second waveguide conductor 106, the third waveguide conductor 111 and the fourth waveguide conductor 112.
  • the OMT arrangement 100 can be formed as a very compact unit in a form of a planar structure that is easily assembled and handled.
  • this also means that the OMT arrangement 100 can be comprised in a larger planar structure that comprises further components such as diplexers, filters, transitions etc., as well as electronic components such as amplifiers.
  • each probe transition 107, 108; 113, 114 comprises a corresponding tapered transition part 121, 122, 123, 124 and co-planar waveguide part 125, 126, 127, 128, which parts are formed in a corresponding main side metallization 119, 120, where each planar waveguide part 125, 126, 127, 128 is connected to a corresponding probe 109, 110; 115, 116.
  • each tapered transition part 121, 122, 123, 124 and co-planar waveguide part 125, 126, 127, 128 are at least partly positioned adjacent a corresponding cavity
  • 129, 130, 131, 132 positioned on a side of the dielectric carrier material 118 that faces away from the main side metallization 119, 120 that comprises the corresponding tapered transition parts 121, 122, 123, 124 and co-planar waveguide parts 125, 126, 127, 128.
  • first probe transition 107 there is a first tapered transition part 121, a first co-planar waveguide part 125, and a first cavity 129.
  • second probe transition 108 there is a second tapered transition part 122, a second co-planar waveguide part 126 and a second cavity
  • the cavities 129, 130, 131, 132 are used to form the co-planar waveguide parts 125, 126, 127, 128 since the conductors that form the co-planar waveguide parts 125, 126, 127, 128 are surrounded by metallization, other ground planes being distanced to such a degree that the conductors that form the co-planar waveguide part sl25, 126, 127, 128 do not act as microstrip conductors.
  • the cavities 129, 130, 131, 132 end a certain distance before the common waveguide conductor 102, even in the case the first layer LI and the second layer L2 are formed in metal. If the first layer LI and the second layer L2 are formed in non-conducting materials with metallizations, no cavities 129, 130, 131, 132 are needed.
  • the third layer L3 is suspended in air by means of the cavities 129, 130, 131, 132 and the waveguide mode is transferred to a planar air-suspended CPW mode on the third layer L3.
  • the air-suspension is removed and the signal mode is a grounded CPW.
  • Each probe transitions 107, 108; 113, 114 is thus according to some aspects constituted by a junction with four orthogonal probes 109, 110; 115, 116 on a dielectric carrier material 118.
  • Each probe transition 107, 108; 113, 114 is adapted to transform between the waveguide modes of the common waveguide conductor 102 and the waveguide modes of the other waveguide conductors 105, 106; 111, 112.
  • each probe transition 107, 108; 113, 114 is adapted to transform the modes of a circular waveguide to a coplanar waveguide (CPW) mode and the CPW transforms the signal to a rectangular waveguide mode. This is of course reciprocal.
  • CPW coplanar waveguide
  • the probes 109, 110; 115, 116 on opposite sides of the common waveguide conductor 102 are electrically connected to rectangular waveguide conductors 105, 106; 111, 112 that are on opposite sides of the third layer L3 and thus on different levels in the multilayer structure 117 such that the rectangular waveguide conductors can cross each other 105, 106; 111, 112.
  • the respective two opposite E-plane probes 109, 110, 115, 116 are 180 degrees out of phase.
  • the use of waveguides with air as a conductive medium in the OMT arrangement 100 reduces the loss compared to OMTs formed by means of planar transmission lines and SIW structures.
  • the waveguide interface also simplifies connection with waveguide-based diplexer filters.
  • the OMT arrangement 100 according to the present disclosure is enabled by means of the third layer L3 that electrically separates the waveguide conductors 105, 106; 111, 112 that run in different levels in the multilayer structure 117.
  • the present disclosure relates to a planar wideband OMT that can cover an entire waveguide frequency band, e.g., the W- or D-band and at the same time be relatively small.
  • the OMT is designed such that it can be realized as a stack of metal sheets or layers LI, L2, L4, L5 and a 2- layer dielectric material L3 such as a PCB. These layers are visualized in Figure 7-13 that show the layers according to for example Figure 3 and Figure 4 from top to bottom as shown in Figure 3 and Figure 4.
  • the physical size of the OMT arrangement 100 is less than 20 mm x 20 mm for D-band and roughly twice that size at E-band.
  • Figure 7 shows the sixth layer L6 that functions as a cover layer and comprises an end 134 to the common waveguide conductor 102.
  • Figure 8 shows the fourth layer L4 that comprises the first part 102a of the common waveguide conductor 102.
  • Figure 9 shows the first layer LI that comprises the second part 102a of the common waveguide conductor 102, the first conductor part 105, the third conductor part 111, the second cavity 130 and the fourth cavity 132.
  • the first conductor part 105 and the third conductor part 11 l have a height that corresponds to the thickness of the first layer LI .
  • Figure 10 shows the third layer L3 seen towards the first main side metallization 119.
  • the first main side metallization 119 is absent, exposing the dielectric carrier material 118, at the full-height waveguide ports 103, 104 and such that the first tapered transition part 121, the third tapered transition part 123, the first co-planar waveguide part 125, the third co-planar waveguide part 127, the first probe 109 and the third probe 115 are formed.
  • Figure 11 shows the third layer L3 seen towards the second main side metallization 120.
  • the second main side metallization 120 is absent, exposing the dielectric carrier material 118, at the full-height waveguide ports 103, 104 and such that the second tapered transition part 122, the fourth tapered transition part 124, the second co-planar waveguide part 126, the fourth co-planar waveguide part 128, the second probe 110 and the fourth probe 116 are formed.
  • a plurality of vias V are added to electrically connect the main side metallizations 119, 120 such that signals are prevented from propagating in the dielectric carrier material 118 and such that a well-defined ground connection is provided for the main side metallizations 119, 120. More specifically, the vias V are positioned around the respective waveguide ports 103, 104 until the waveguide ports 103, 104 are split by the third layer L3 into the two respective waveguide conductors 105, 106; 111, 112 with reduced height. The vias V are also positioned around the probe transitions 107, 108; 113, 114.
  • Figure 12 shows the second layer L2 that comprises the third part 102c of the common waveguide conductor 102, the second conductor part 106, the fourth conductor part 112, the first cavity 129 and the third cavity 131.
  • the second conductor part 106 and the fourth conductor part 112 have a height that corresponds to the thickness of the second layer L2.
  • Figure 13 shows the fifth layer L5 that comprises the fourth part 102d of the common waveguide conductor 102.
  • each layer has a 2-dimensional shape and can thus be manufactured with high tolerances using low-cost methods such as etching, water-jet cutting, or electrical discharge machining.
  • the required minimum number of stacked layers is only five plus the third layer that for example is a metallized PCB.
  • the dielectric carrier material 118 should have a low dielectric constant and/or be thin relative the wavelength.
  • transition from waveguide to CPW and back to waveguide is beneficial for maintaining the 2- dimensional geometry of the layers such that no pyramidal or conical posts are required as shown in prior art.
  • the present disclosure is not limited to the above, but may vary freely within the scope of the appended claims.
  • the number of layers can be increased if it is considered beneficial. Thinner layers can be easier to pattern, e.g. with etching, and more layers can allow a more smooth shape of e.g. the waveguide splitter/combiner.
  • the third layer can be realized in any suitable planar technology with a dielectric carrier material and two metal layers, e.g. ceramic or semiconductor technologies.
  • the first waveguide port 103 and the second waveguide port 104 enter the OMT arrangement from the sides.
  • the OMT arrangement can comprise a respective E-plane bend for the first waveguide port 103 and the second waveguide port 104 such that the first waveguide port 103 and the second waveguide port 104 are formed in any one of the fifth layer L5 or the sixth layer L6.
  • the first waveguide conductor 105 and the third waveguide conductor 111 propagate in the first layer LI
  • the second waveguide conductor 106 and the fourth waveguide conductor 112 propagate in the second layer L2.
  • These layers are described to partly comprise the waveguide conductors 105, 106, 111, 112, only having side walls. It is conceivable that the first layer LI and the second layer L2 comprise all inner walls of these waveguide conductors 105, 106, 111, 112 except the one provided by the third layer L3. This can be the case if these waveguide conductors 105, 106, 111, 112 are milled, molded or otherwise formed as channels in the first layer LI and the second layer L2.
  • the present disclosure also relates to a method for configuring orthomode transducer, OMT, arrangement 100.
  • the method comprises providing SI 00 a first layer LI, providing S200 a second layer L2, providing S300 an intermediate third layer L3, and forming S400 a multilayer structure 117 using the layers LI, L2, L3 and comprising a common port 101 comprised in a common waveguide conductor 102, a first waveguide port 103 and a second waveguide port 104.
  • the method further comprises connecting S500 the first waveguide port 103 to the common port 101 via a first waveguide conductor 105 that propagates in a first layer LI and a second waveguide conductor 106 that propagates in a second layer L2, separated from the first layer LI, and via the common waveguide conductor 102.
  • the first waveguide conductor 105 and the second waveguide conductor 106 are electrically connected to the common waveguide conductor 106 via a first probe transition 107 comprising a first probe 109 and a second probe transition 108 comprising a second probe 110, where the first probe 109 and the second probe 110 enter the common waveguide conductor 102 radially from opposite entering directions,
  • the method further comprises connecting S600 the second waveguide port 104 to the common port 101 via a third waveguide conductor 111 that propagates in the first layer LI and a fourth waveguide conductor 112 that propagates in the second layer L2, and via the common waveguide conductor 102.
  • the third waveguide conductor 111 and the fourth waveguide conductor 112 are electrically connected to the common waveguide conductor 102 via a third probe transition 113 comprising a third probe 115 and a fourth probe transition 114 comprising a fourth probe 116, where the third probe 115 and the fourth probe 116 enter the common waveguide conductor 102 radially from opposite entering directions that are perpendicular to the entering directions of the first probe 109 and the second probe 110, and
  • the method further comprises using S700 the third layer L3 for electrically separating the first waveguide conductor 105 and the second waveguide conductor 106 and for electrically separating the third waveguide conductor 111 and the fourth waveguide conductor 112, the third layer L3 at least partly separating the first layer LI and the second layer L2.

Abstract

The present disclosure relates to an orthomode transducer, OMT, arrangement (100) formed in a multilayer structure (117) and comprising a common port (101) comprised in a common waveguide conductor (102), a first waveguide port (103) and a second waveguide port (104). The first waveguide port (103) is connected to the common port (101) via a first waveguide conductor (105) that propagates in a first layer (L1) and a second waveguide conductor (106) that propagates in a second layer (L2), separated from the first layer (L1), and via the common waveguide conductor (102). The first waveguide conductor (105) and the second waveguide conductor (106) are electrically connected to the common waveguide conductor (106) via a first probe transition (107) comprising a first probe (109), and a second probe transition (108) comprising a second probe (110). The first probe (109) and the second probe (110) enter the common waveguide conductor (102) radially from opposite entering directions.The second waveguide port (104) is connected to the common port (101) via a third waveguide conductor (111) that propagates in the first layer (L1) and a fourth waveguide conductor (112) that propagates in the second layer (L2), and via the common waveguide conductor (102). The third waveguide conductor (111) and the fourth waveguide conductor (112) are electrically connected to the common waveguide conductor (102) via a third probe transition (113) comprising a third probe (115) and a fourth probe transition (114) comprising a fourth probe (116). The third probe (115) and the fourth probe (116) enter the common waveguide conductor (102) radially from opposite entering directions that are perpendicular to the entering directions of the first probe (109) and the second probe (110). The first waveguide conductor (105) and the second waveguide conductor (106) are electrically separated by an intermediate third layer (L3), and the third waveguide conductor (111) and the fourth waveguide conductor (112) are electrically separated by the third layer (L3), the third layer (L3) at least partly separating the first layer (L1) and the second layer (L2).

Description

TITLE
An orthomode transducer arrangement
TECHNICAL FIELD
The present disclosure relates to an orthomode transducer (OMT) arrangement formed in a multilayer structure and comprising a common port comprised in a common waveguide conductor, a first waveguide port and a second waveguide port.
BACKGROUND
In many fields of wireless communication, such as microwave communication, as well as for applications associated with radars and other sensors using microwave technology, waveguides are used for transporting wireless signals, due to the low losses incurred in a waveguide.
In many applications, waveguides are used to connect microwave radios to antenna waveguide ports. When using dual polarization, i.e. horizontal and vertical, to transfer data at a higher data rate than what is possible with only single polarization, it is necessary to introduce an orthomode transducer (OMT) between two separate microwave radios and a dual polarized antenna waveguide port to combine the signals from a corresponding rectangular waveguide port of each microwave radio to the antenna waveguide port that constitutes a common port and can be circular or square.
Several different types of OMTs exist, e.g. waveguide side-coupled OMT, Bbifot and other OMTs using a septum, and a so-called turnstile junction OMT. The advantage with the turnstile junction OMT is that it has full mechanical and electrical symmetry between the two polarizations. The necessary waveguide arrangement for the turnstile junction OMT results in a very complex mechanical structure. Moreover, the turnstile junction requires a pyramidal or conical post in order to have a decent transition between the common port and the other four ports.
Turnstile junction OMTs with a more planar geometry based on stacked structures have been presented, for example using micromachined silicon chips. Such an OMT is simplified towards a more 2-dimensional geometry, but there is still a conical post in the turnstile junction and waveguide bends that requires a height-controlled machining or processing of the silicon chips.
An alternative to the turnstile junction OMT is to use a dielectric substrate with planar transmission lines, e.g. microstrip, and four orthogonal probes to connect to the common waveguide port. This solution is difficult to use in combination with waveguide-based diplexer filters and the long planar transmission lines add loss. Other OMTs with a more planar geometry can be based on substrate integrated waveguides (SIW), as for example disclosed in “A Fully Planar Substrate Integrated Probe-Based Wideband Orthomode Transducer” (Uros Jankovic, Djuradj Budimir) where one major drawback is the significant losses in the substrate materials, especially at higher frequencies, for example beyond 130 GHz, but also at lower frequencies.
In order to develop future point-to-point radios operating at relatively high frequencies, for example beyond 130 GHz but also at lower frequencies, it is essential to find a low-cost OMT that maintain acceptable RF performance, i.e. insertion loss and return loss, over the frequency bands of interest, requiring a minimal amount of space.
There is thus a need for an improved OMT arrangement where the above drawbacks are minimized.
SUMMARY
It is an object of the present disclosure to provide a low-cost OMT that maintain acceptable RF performance, i.e. insertion loss and return loss, over the frequency bands of interest, requiring a minimal amount of space.
Said object is obtained by means of an orthomode transducer (OMT) arrangement formed in a multilayer structure and comprising a common port comprised in a common waveguide conductor, a first waveguide port and a second waveguide port. The first waveguide port is connected to the common port via a first waveguide conductor that propagates in a first layer and a second waveguide conductor that propagates in a second layer, separated from the first layer, and via the common waveguide conductor. The first waveguide conductor and the second waveguide conductor are electrically connected to the common waveguide conductor via a first probe transition comprising a first probe and a second probe transition comprising a second probe. The first probe and the second probe enter the common waveguide conductor radially from opposite entering directions. Furthermore, the second waveguide port is connected to the common port via a third waveguide conductor that propagates in the first layer and a fourth waveguide conductor that propagates in the second layer, and via the common waveguide conductor. The third waveguide conductor and the fourth waveguide conductor are electrically connected to the common waveguide conductor via a third probe transition comprising a third probe and a fourth probe transition comprising a fourth probe. The third probe and the fourth probe enter the common waveguide conductor radially from opposite entering directions that are perpendicular to the entering directions of the first probe and the second probe. The first waveguide conductor and the second waveguide conductor are electrically separated by an intermediate third layer, and the third waveguide conductor and the fourth waveguide conductor are electrically separated by the third layer, the third layer at least partly separating the first layer and the second layer.
In this way, the OMT arrangement can be formed as a very compact unit in a form of a planar structure that is easily assembled and handled, and which can cover an entire waveguide frequency band, e.g., the W- or D-band and at the same time be relatively small. Furthermore, this also means that the OMT arrangement can be comprised in a larger planar structure that comprises further components such as diplexers, filters, transitions etc., as well as electronic components such as amplifiers.
The use of waveguides with air as a conductive medium in the OMT arrangement reduces the loss compared to OMTs formed by means of planar transmission lines and SIW structures. The waveguide interface also simplifies connection with waveguide-based diplexer filters.
According to some aspects, the third layer comprises a dielectric carrier material having a first main side metallization and a second main side metallization. The first probe and the third probe are formed in the first main side metallization, and the second probe and the fourth probe are formed in the second main side metallization.
This means that the third layer is used to mechanically support the probes, for electrically isolating the waveguide conductors that run in different levels in the multilayer structure, and for splitting the waveguide ports of each polarization into two waveguide conductors.
According to some aspects, the OMT arrangement further comprises a fourth layer and a fifth layer. The first waveguide conductor and the third waveguide conductor run between the first main side metallization and the fourth layer, and the second waveguide conductor and the fourth waveguide conductor run between the second main side metallization and the fifth layer.
This means that the first waveguide conductor and the third waveguide conductor are at least mainly electrically enclosed by electrically conducting walls formed in the first layer, the fourth layer and the first main side metallization. This also means that the second waveguide conductor and the fourth waveguide conductor are at least mainly electrically enclosed by electrically conducting walls formed in the second layer, the fifth layer and the second main side metallization. According to some aspects, the common waveguide conductor comprises a first part in the fourth layer, a second part in the first layer, a third part in the second layer and a fourth part in the fifth layer. The fourth part comprises the common port.
This means that the common waveguide conductor is formed in several layers, which is needed for the probe transitions between the common waveguide conductor and the other waveguide conductors
According to some aspects, the OMT arrangement further comprises a sixth layer that is adapted to terminate the first part of the common waveguide conductor that is opposite the common port. In this way, the common waveguide conductor is shorted at end that is opposite the common port.
According to some aspects, all layers run parallel to an H-plane for the first waveguide conductor, the second waveguide conductor, the third waveguide conductor and the fourth waveguide conductor.
In this way, the OMT arrangement can be formed as a very compact unit in a form of a planar structure that is easily assembled and handled,
According to some aspects, each first probe transition comprises a corresponding tapered transition part and co-planar waveguide part, which parts are formed in a corresponding main side metallization. Each planar waveguide part is connected to a corresponding probe.
According to some aspects, each tapered transition part and co-planar waveguide part are at least partly positioned adjacent a corresponding cavity positioned on a side of the dielectric carrier material that faces away from the main side metallization that comprises the corresponding tapered transition parts and co-planar waveguide parts.
This means that the cavities are used to form the co-planar waveguide parts since the conductors that form the co-planar waveguide parts are surrounded by metallization
According to some aspects, at least two layers are formed in metallized substrates. According to some further aspects, at least two layers are formed in metal. This means that the layers can be manufactured in a cost-effective and reliable manner using well-known processes.
This object is also obtained by means of methods that are associated with the above advantages. BRIEF DESCRIPTION OF THE DRAWINGS
The present disclosure will now be described more in detail with reference to the appended drawings, where:
Figure 1 shows a schematic see-through perspective view of an OMT arrangement;
Figure 2 shows a schematic simplified top view of the OMT arrangement;
Figure 3 shows a first section of Figure 2;
Figure 4 shows a second section of Figure 2;
Figure 5 shows an enlarged part of Figure 1;
Figure 6 shows an enlarged part of Figure 1 in a different perspective;
Figure 7 shows a sixth layer;
Figure 8 shows a fourth layer;
Figure 9 shows a first layer;
Figure 10 shows a third layer seen towards a first main side metallization;
Figure 11 shows the third layer seen towards a second main side metallization;
Figure 12 shows a second layer;
Figure 13 shows a fifth layer; and
Figure 14 shows a flowchart for methods according to the present disclosure.
DETAILED DESCRIPTION
Aspects of the present disclosure will now be described more fully hereinafter with reference to the accompanying drawings. The different devices, systems and methods disclosed herein can, however, be realized in many different forms and should not be construed as being limited to the aspects set forth herein. Like numbers in the drawings refer to like elements throughout. The terminology used herein is for describing aspects of the disclosure only and is not intended to limit the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
In the following, it is referred to Figure 1 that shows a schematic see-through perspective view of an OMT arrangement, Figure 2 that shows a schematic simplified top view of the OMT arrangement, Figure 3 that shows a first section of Figure 2, Figure 4 that shows a second section of Figure 2, Figure 5 that shows an enlarged part of Figure 1, and Figure 6 that shows an enlarged part of Figure 1 in a different perspective than Figure 5.
According to a first example, there is an orthomode transducer, OMT, arrangement 100 formed in a multilayer structure 117 and comprising a common port 101 comprised in a common waveguide conductor 102, a first waveguide port 103 and a second waveguide port 104. According to some aspects, the common port 101 is a circular common port or a square common port, and where the common waveguide conductor 102 is a circular waveguide conductor or a square waveguide conductor. 9. According to some aspects, the common port 101 is adapted to be connected to a waveguide device 133, such as for example a continuing waveguide conductor that is adapted to form a continuation of the common waveguide conductor 102.
The first waveguide port 103 is connected to the common port 101 via a first waveguide conductor 105 that propagates in a first layer LI and a second waveguide conductor 106 that propagates in a second layer L2, separated from the first layer LI, and via the common waveguide conductor 102. The first waveguide conductor 105 and the second waveguide conductor 106 are electrically connected to the common waveguide conductor 102 via a first probe transition 107 comprising a first probe 109 and a second probe transition 108 comprising a second probe 110. The first probe 109 and the second probe 110 enter the common waveguide conductor 102 radially from opposite entering directions.
The second waveguide port 104 is connected to the common port 101 via a third waveguide conductor 111 that propagates in the first layer LI and a fourth waveguide conductor 112 that propagates in the second layer L2, and via the common waveguide conductor 102.
This means that the first waveguide conductor 105 and the third waveguide conductor 111 are at least partly formed in the first layer LI, the first layer LI comprising electrically conducting walls that at partly electrically enclose the first waveguide conductor 105 and the second waveguide conductor 111. Correspondingly, the second waveguide conductor 106 and the fourth waveguide conductor 112 are at least partly formed in the second layer L2, the second layer L2 comprising electrically conducting walls that at partly electrically enclose the second waveguide conductor 106 and the fourth waveguide conductor 112. According to some aspects, the first layer LI and the second layer L2 are formed in a piece of metal, or, alternatively, formed in an at least partly metalized non-conducting material such as a dielectric material. Mixes of materials are of course possible. In any case, material is removed from the first layer LI and the second layer L2 such that the first waveguide conductor 105, the second waveguide conductor 106, the third waveguide conductor 111 and the fourth waveguide conductor 112 are formed as tracks in the first layer LI and the second layer L2.
The third waveguide conductor 111 and the fourth waveguide conductor 112 are electrically connected to the common waveguide conductor 102 via a third probe transition 113 comprising a third probe 115 and a fourth probe transition 114 comprising a fourth probe 116. The third probe 115 and the fourth probe 116 enter the common waveguide conductor 102 radially from opposite entering directions that are perpendicular to the entering directions of the first probe 109 and the second probe 110. According to some aspects, the first waveguide port 103, the second waveguide port 104, and the waveguide conductors 105, 106; 111, 112 all have a rectangular cross-section.
The first waveguide conductor 105 and the second waveguide conductor 106 are electrically separated by an intermediate third layer L3, and the third waveguide conductor 111 and the fourth waveguide conductor 112 are electrically separated by the third layer L3, the third layer L3 at least partly separating the first layer LI and the second layer L2.
This means that the first waveguide port 103 and the second waveguide port 104, which are fullheight rectangular waveguides, both are split by the third layer L3 into two respective waveguide conductors 105, 106; 111, 112 with reduced height. The third layer L3 isolates the second waveguide conductor 106 from the third waveguide conductor 111 such that they can cross each other without interference. In Figure 3, the electrical field E is indicated at the first waveguide port 103 split.
According to some aspects, the third layer L3 comprises a dielectric carrier material 118 having a first main side metallization 119 and a second main side metallization 120, where the first probe 109 and the third probe 115 are formed in the first main side metallization 119, and where the second probe 110 and the fourth probe 116 are formed in the second main side metallization 120. This is for example shown for the first probe 109 and the second probe 110 in Figure 4. In this way, the probes 109, 110, 115, 116 that feed the common port and the common waveguide conductor 102 are supported by the dielectric carrier material 118 that extends over the common port 101. As an example, the third layer L3 can be in the form of a printed circuit board (PCB). In fact, the third layer L3 has a triple function: it is used to mechanically support the probes 109, 110, 115, 116, for electrically isolating the waveguide conductors that run in different levels in the multilayer structure 117, and for splitting the waveguide ports 103, 104 of each polarization into two waveguide conductors 105, 106; 111, 112 each.
According to some aspects, the OMT arrangement 100 further comprises a fourth layer L4 and a fifth layer L5, where the first waveguide conductor 105 and the third waveguide conductor 111 run between the first main side metallization 119 and the fourth layer L4, and where the second waveguide conductor 106 and the fourth waveguide conductor 112 run between the second main side metallization 120 and the fifth layer L5.
This means that the first waveguide conductor 105 and the third waveguide conductor 111 are at least mainly electrically enclosed by electrically conducting walls formed in the first layer LI, the fourth layer L4 and the first main side metallization 119. This also means that the second waveguide conductor 106 and the fourth waveguide conductor 112 are at least mainly electrically enclosed by electrically conducting walls formed in the second layer L2, the fifth layer L5 and the second main side metallization 120.
According to some aspects at least two layers LI, L2, L3, L4, L5, L6 are formed in metallized substrates, and according to some further aspects, at least two layers LI, L2, L4, L5, L6 are formed in metal.
This means that the layers can be manufactured in a cost-effective and reliable manner using well- known processes.
According to some aspects, the common waveguide conductor 102 comprises a first part 102a in the fourth layer L4, a second part 102b in the first layer LI, a third part 102c in the second layer L2 and a fourth part 102d in the fifth layer L4, where the fourth part 102d comprises the common port 101. This means that the common waveguide conductor 102 is formed in several layers, which is needed for the probe transitions 107, 113 between the common waveguide conductor 102 and the other waveguide conductors 105, 106; 111, 112.
According to some aspects, the OMT arrangement 100 further comprises a sixth layer L6 that is adapted to terminate the first part 102a of the common waveguide conductor 102 that is opposite the common port 101. In this way, the common waveguide conductor 102 is shorted at end that is opposite the common port 101. According to some aspects, all layers LI, L2, L3, L4, L5, L6 run parallel to an H-plane (schematically indicated in Figure 1) for the first waveguide conductor 105, the second waveguide conductor 106, the third waveguide conductor 111 and the fourth waveguide conductor 112. In this way, the OMT arrangement 100 can be formed as a very compact unit in a form of a planar structure that is easily assembled and handled. Furthermore, this also means that the OMT arrangement 100 can be comprised in a larger planar structure that comprises further components such as diplexers, filters, transitions etc., as well as electronic components such as amplifiers.
According to some aspects, each probe transition 107, 108; 113, 114 comprises a corresponding tapered transition part 121, 122, 123, 124 and co-planar waveguide part 125, 126, 127, 128, which parts are formed in a corresponding main side metallization 119, 120, where each planar waveguide part 125, 126, 127, 128 is connected to a corresponding probe 109, 110; 115, 116. According to some further aspects, each tapered transition part 121, 122, 123, 124 and co-planar waveguide part 125, 126, 127, 128 are at least partly positioned adjacent a corresponding cavity
129, 130, 131, 132 positioned on a side of the dielectric carrier material 118 that faces away from the main side metallization 119, 120 that comprises the corresponding tapered transition parts 121, 122, 123, 124 and co-planar waveguide parts 125, 126, 127, 128.
In this example, for the first probe transition 107 there is a first tapered transition part 121, a first co-planar waveguide part 125, and a first cavity 129. For the second probe transition 108 there is a second tapered transition part 122, a second co-planar waveguide part 126 and a second cavity
130. For the third probe transition 113 there is a third tapered transition part 123, a third co-planar waveguide part 127 and a third cavity 131. For the fourth probe transition 107 there is a fourth tapered transition part 124, a fourth co-planar waveguide part 128 and a fourth cavity 132.
This means that the cavities 129, 130, 131, 132 are used to form the co-planar waveguide parts 125, 126, 127, 128 since the conductors that form the co-planar waveguide parts 125, 126, 127, 128 are surrounded by metallization, other ground planes being distanced to such a degree that the conductors that form the co-planar waveguide part sl25, 126, 127, 128 do not act as microstrip conductors. This is the case although the cavities 129, 130, 131, 132 end a certain distance before the common waveguide conductor 102, even in the case the first layer LI and the second layer L2 are formed in metal. If the first layer LI and the second layer L2 are formed in non-conducting materials with metallizations, no cavities 129, 130, 131, 132 are needed.
In other words, as the first waveguide conductor 105, second waveguide conductor 106, third waveguide conductor 111 and fourth waveguide conductor 112 approach the respective probe transitions 107, 108, 113, 114, the third layer L3 is suspended in air by means of the cavities 129, 130, 131, 132 and the waveguide mode is transferred to a planar air-suspended CPW mode on the third layer L3. Before entering the common waveguide conductor 102, the air-suspension is removed and the signal mode is a grounded CPW.
Each probe transitions 107, 108; 113, 114 is thus according to some aspects constituted by a junction with four orthogonal probes 109, 110; 115, 116 on a dielectric carrier material 118. Each probe transition 107, 108; 113, 114 is adapted to transform between the waveguide modes of the common waveguide conductor 102 and the waveguide modes of the other waveguide conductors 105, 106; 111, 112. In the case of the common waveguide conductor 102 being a circular waveguide, each probe transition 107, 108; 113, 114 is adapted to transform the modes of a circular waveguide to a coplanar waveguide (CPW) mode and the CPW transforms the signal to a rectangular waveguide mode. This is of course reciprocal.
By using a mirrored symmetry, the probes 109, 110; 115, 116 on opposite sides of the common waveguide conductor 102 are electrically connected to rectangular waveguide conductors 105, 106; 111, 112 that are on opposite sides of the third layer L3 and thus on different levels in the multilayer structure 117 such that the rectangular waveguide conductors can cross each other 105, 106; 111, 112. By splitting the rectangular waveguide ports 103, 104 in the center of the H-plane, the respective two opposite E-plane probes 109, 110, 115, 116 are 180 degrees out of phase.
The use of waveguides with air as a conductive medium in the OMT arrangement 100 reduces the loss compared to OMTs formed by means of planar transmission lines and SIW structures. The waveguide interface also simplifies connection with waveguide-based diplexer filters. The OMT arrangement 100 according to the present disclosure is enabled by means of the third layer L3 that electrically separates the waveguide conductors 105, 106; 111, 112 that run in different levels in the multilayer structure 117.
The present disclosure relates to a planar wideband OMT that can cover an entire waveguide frequency band, e.g., the W- or D-band and at the same time be relatively small. The OMT is designed such that it can be realized as a stack of metal sheets or layers LI, L2, L4, L5 and a 2- layer dielectric material L3 such as a PCB. These layers are visualized in Figure 7-13 that show the layers according to for example Figure 3 and Figure 4 from top to bottom as shown in Figure 3 and Figure 4. According to some aspects, the physical size of the OMT arrangement 100 is less than 20 mm x 20 mm for D-band and roughly twice that size at E-band.
Figure 7 shows the sixth layer L6 that functions as a cover layer and comprises an end 134 to the common waveguide conductor 102. Figure 8 shows the fourth layer L4 that comprises the first part 102a of the common waveguide conductor 102.
Figure 9 shows the first layer LI that comprises the second part 102a of the common waveguide conductor 102, the first conductor part 105, the third conductor part 111, the second cavity 130 and the fourth cavity 132. According to some aspect, the first conductor part 105 and the third conductor part 11 lhave a height that corresponds to the thickness of the first layer LI .
Figure 10 shows the third layer L3 seen towards the first main side metallization 119. The first main side metallization 119 is absent, exposing the dielectric carrier material 118, at the full-height waveguide ports 103, 104 and such that the first tapered transition part 121, the third tapered transition part 123, the first co-planar waveguide part 125, the third co-planar waveguide part 127, the first probe 109 and the third probe 115 are formed.
Figure 11 shows the third layer L3 seen towards the second main side metallization 120. The second main side metallization 120 is absent, exposing the dielectric carrier material 118, at the full-height waveguide ports 103, 104 and such that the second tapered transition part 122, the fourth tapered transition part 124, the second co-planar waveguide part 126, the fourth co-planar waveguide part 128, the second probe 110 and the fourth probe 116 are formed.
As shown in Figure 10 and Figure 11, a plurality of vias V (only a few indicated for reasons of clarity) are added to electrically connect the main side metallizations 119, 120 such that signals are prevented from propagating in the dielectric carrier material 118 and such that a well-defined ground connection is provided for the main side metallizations 119, 120. More specifically, the vias V are positioned around the respective waveguide ports 103, 104 until the waveguide ports 103, 104 are split by the third layer L3 into the two respective waveguide conductors 105, 106; 111, 112 with reduced height. The vias V are also positioned around the probe transitions 107, 108; 113, 114.
Figure 12 shows the second layer L2 that comprises the third part 102c of the common waveguide conductor 102, the second conductor part 106, the fourth conductor part 112, the first cavity 129 and the third cavity 131. According to some aspect, the second conductor part 106 and the fourth conductor part 112 have a height that corresponds to the thickness of the second layer L2.
Figure 13 shows the fifth layer L5 that comprises the fourth part 102d of the common waveguide conductor 102.
All these layers are assembled together, for example bonded together in a suitable manner. Each layer has a 2-dimensional shape and can thus be manufactured with high tolerances using low-cost methods such as etching, water-jet cutting, or electrical discharge machining. The required minimum number of stacked layers is only five plus the third layer that for example is a metallized PCB. For example, the dielectric carrier material 118 should have a low dielectric constant and/or be thin relative the wavelength.
The transition from waveguide to CPW and back to waveguide is beneficial for maintaining the 2- dimensional geometry of the layers such that no pyramidal or conical posts are required as shown in prior art.
The present disclosure is not limited to the above, but may vary freely within the scope of the appended claims. For example, the number of layers can be increased if it is considered beneficial. Thinner layers can be easier to pattern, e.g. with etching, and more layers can allow a more smooth shape of e.g. the waveguide splitter/combiner. The third layer can be realized in any suitable planar technology with a dielectric carrier material and two metal layers, e.g. ceramic or semiconductor technologies.
In the examples provided, the first waveguide port 103 and the second waveguide port 104 enter the OMT arrangement from the sides. Alternatively, the OMT arrangement can comprise a respective E-plane bend for the first waveguide port 103 and the second waveguide port 104 such that the first waveguide port 103 and the second waveguide port 104 are formed in any one of the fifth layer L5 or the sixth layer L6.
The first waveguide conductor 105 and the third waveguide conductor 111 propagate in the first layer LI, and the second waveguide conductor 106 and the fourth waveguide conductor 112 propagate in the second layer L2. These layers are described to partly comprise the waveguide conductors 105, 106, 111, 112, only having side walls. It is conceivable that the first layer LI and the second layer L2 comprise all inner walls of these waveguide conductors 105, 106, 111, 112 except the one provided by the third layer L3. This can be the case if these waveguide conductors 105, 106, 111, 112 are milled, molded or otherwise formed as channels in the first layer LI and the second layer L2.
With reference Figure 14, the present disclosure also relates to a method for configuring orthomode transducer, OMT, arrangement 100. The method comprises providing SI 00 a first layer LI, providing S200 a second layer L2, providing S300 an intermediate third layer L3, and forming S400 a multilayer structure 117 using the layers LI, L2, L3 and comprising a common port 101 comprised in a common waveguide conductor 102, a first waveguide port 103 and a second waveguide port 104.
The method further comprises connecting S500 the first waveguide port 103 to the common port 101 via a first waveguide conductor 105 that propagates in a first layer LI and a second waveguide conductor 106 that propagates in a second layer L2, separated from the first layer LI, and via the common waveguide conductor 102. The first waveguide conductor 105 and the second waveguide conductor 106 are electrically connected to the common waveguide conductor 106 via a first probe transition 107 comprising a first probe 109 and a second probe transition 108 comprising a second probe 110, where the first probe 109 and the second probe 110 enter the common waveguide conductor 102 radially from opposite entering directions,
The method further comprises connecting S600 the second waveguide port 104 to the common port 101 via a third waveguide conductor 111 that propagates in the first layer LI and a fourth waveguide conductor 112 that propagates in the second layer L2, and via the common waveguide conductor 102. The third waveguide conductor 111 and the fourth waveguide conductor 112 are electrically connected to the common waveguide conductor 102 via a third probe transition 113 comprising a third probe 115 and a fourth probe transition 114 comprising a fourth probe 116, where the third probe 115 and the fourth probe 116 enter the common waveguide conductor 102 radially from opposite entering directions that are perpendicular to the entering directions of the first probe 109 and the second probe 110, and
The method further comprises using S700 the third layer L3 for electrically separating the first waveguide conductor 105 and the second waveguide conductor 106 and for electrically separating the third waveguide conductor 111 and the fourth waveguide conductor 112, the third layer L3 at least partly separating the first layer LI and the second layer L2.

Claims

1. An orthomode transducer, OMT, arrangement (100) formed in a multilayer structure (117) and comprising a common port (101) comprised in a common waveguide conductor (102), a first waveguide port (103) and a second waveguide port (104, where
- the first waveguide port (103) is connected to the common port (101) via a first waveguide conductor (105) that propagates in a first layer (LI) and a second waveguide conductor (106) that propagates in a second layer (L2), separated from the first layer (LI), and via the common waveguide conductor (102), where the first waveguide conductor (105) and the second waveguide conductor (106) are electrically connected to the common waveguide conductor (106) via a first probe transition (107) comprising a first probe (109) and a second probe transition (108) comprising a second probe (110), where the first probe (109) and the second probe (110) enter the common waveguide conductor (102) radially from opposite entering directions, and where
- the second waveguide port (104) is connected to the common port (101) via a third waveguide conductor (111) that propagates in the first layer (LI) and a fourth waveguide conductor (112) that propagates in the second layer (L2), and via the common waveguide conductor (102), where the third waveguide conductor (111) and the fourth waveguide conductor (112) are electrically connected to the common waveguide conductor (102) via a third probe transition (113) comprising a third probe (115) and a fourth probe transition (114) comprising a fourth probe (116), where the third probe (115) and the fourth probe (116) enter the common waveguide conductor (102) radially from opposite entering directions that are perpendicular to the entering directions of the first probe (109) and the second probe (110), wherein
- the first waveguide conductor (105) and the second waveguide conductor (106) are electrically separated by an intermediate third layer (L3), and where the third waveguide conductor (111) and the fourth waveguide conductor (112) are electrically separated by the third layer (L3), the third layer (L3) at least partly separating the first layer (LI) and the second layer (L2).
2. The OMT arrangement (100) according to claim 1, wherein the third layer (L3) comprises a dielectric carrier material (118) having a first main side metallization (119) and a second main side metallization (120), where the first probe (109) and the third probe (115) are formed in the first main side metallization (119), and where the second probe (110) and the fourth probe (116) are formed in the second main side metallization (120).
3. The OMT arrangement (100) according to claim 2, further comprising a fourth layer (L4) and a fifth layer (L5), where the first waveguide conductor (105) and the third waveguide conductor (111) run between the first main side metallization (119) and the fourth layer (L4), and where the second waveguide conductor (106) and the fourth waveguide conductor (112) run between the second main side metallization (120) and the fifth layer (L5).
4. The OMT arrangement (100) according to claim 3, wherein the common waveguide conductor (102) comprises a first part (102a) in the fourth layer (L4), a second part (102b) in the first layer (LI), a third part (102c) in the second layer (L2) and a fourth part (102d) in the fifth layer (L4), where the fourth part (102d) comprises the common port (101).
5. The OMT arrangement (100) according to claim 4, further comprising a sixth layer (L6) that is adapted to terminate the first part (102a) of the common waveguide conductor (102) that is opposite the common port (101).
6. The OMT arrangement (100) according to any one of the previous claims, wherein all layers (LI, L2, L3, L4, L5, L6) run parallel to an H-plane for the first waveguide conductor (105), the second waveguide conductor (106), the third waveguide conductor (111) and the fourth waveguide conductor (112).
7. The OMT arrangement (100) according to any one of the previous claims, wherein each first probe transition (107, 108; 113, 114) comprises a corresponding tapered transition part (121, 122, 123, 124) and co-planar waveguide part (125, 126, 127, 128), which parts are formed in a corresponding main side metallization (119, 120), where each planar waveguide part (125, 126, 127, 128) is connected to a corresponding probe (109, 110; 115, 116).
8. The OMT arrangement (100) according to claim 7, wherein each tapered transition part (121, 122, 123, 124) and co-planar waveguide part (125, 126, 127, 128) are at least partly positioned adjacent a corresponding cavity (129, 130, 131, 132) positioned on a side of the dielectric carrier material (118) that faces away from the main side metallization (119, 120) that comprises the corresponding tapered transition parts (121, 122, 123, 124) and co-planar waveguide parts (125, 126, 127, 128).
9. The OMT arrangement (100) according to any one of the previous claims, wherein the common port (101) is adapted to be connected to a waveguide device (133).
10. The OMT arrangement (100) according to any one of the previous claims, wherein at least two layers (LI, L2, L3, L4, L5, L6) are formed in metallized substrates.
11. The OMT arrangement (100) according to any one of the previous claims, wherein at least two layers (LI, L2, L4, L5, L6) are formed in metal.
12. The OMT arrangement (100) according to any one of the previous claims, wherein the common port (101) is a circular common port or a square common port, and where the common waveguide conductor (102) is a circular waveguide conductor or a square waveguide conductor.
13. A method for configuring orthomode transducer, OMT, arrangement (100) comprising providing (SI 00) a first layer (LI) providing (S200) a second layer (L2) providing (S300) an intermediate third layer (L3), forming (S400) a multilayer structure (117) using the layers (LI, L2, L3) and comprising a common port (101) comprised in a common waveguide conductor (102), a first waveguide port (103) and a second waveguide port (104, where the method comprises connecting (S500) the first waveguide port (103) to the common port (101) via a first waveguide conductor (105) that propagates in a first layer (LI) and a second waveguide conductor (106) that propagates in a second layer (L2), separated from the first layer (LI), and via the common waveguide conductor (102), where the first waveguide conductor (105) and the second waveguide conductor (106) are electrically connected to the common waveguide conductor (106) via a first probe transition (107) comprising a first probe (109) and a second probe transition (108) comprising a second probe (110), where the first probe (109) and the second probe (110) enter the common waveguide conductor (102) radially from opposite entering directions, connecting (S600) the second waveguide port (104) to the common port (101) via a third waveguide conductor (111) that propagates in the first layer (LI) and a fourth waveguide conductor (112) that propagates in the second layer (L2), and via the common waveguide conductor (102), where the third waveguide conductor (111) and the fourth waveguide conductor (112) are electrically connected to the common waveguide conductor (102) via a third probe transition (113) comprising a third probe (115) and a fourth probe transition (114) comprising a fourth probe (116), where the third probe (115) and the fourth probe (116) enter the common waveguide conductor (102) radially from opposite entering directions that are perpendicular to the entering directions of the first probe (109) and the second probe (110), and using (S700) the third layer (L3) for electrically separating the first waveguide conductor (105) and the second waveguide conductor (106) and for electrically separating the third waveguide conductor (111) and the fourth waveguide conductor (112), the third layer (L3) at least partly separating the first layer (LI) and the second layer (L2).
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JANKOVIC U. ET AL: "A Fully Planar Substrate Integrated Probe-based Wideband Orthomode Transducer", 12TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION (EUCAP 2018), 9-13 APRIL 2018, 13 April 2018 (2018-04-13), Stevenage, UK, pages 1 - 5, XP055976908, ISBN: 978-1-78561-816-1, Retrieved from the Internet <URL:https://ieeexplore.ieee.org/stampPDF/getPDF.jsp?tp=&arnumber=8568105&ref=aHR0cHM6Ly9pZWVleHBsb3JlLmllZWUub3JnL2RvY3VtZW50Lzg1NjgxMDU=> [retrieved on 20221101], DOI: 10.1049/cp.2018.0427 *

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