WO2023193561A1 - Procédé et dispositif de détermination de paramètre pour résistance d'attaque de grille de transistor de commutation, et circuit - Google Patents

Procédé et dispositif de détermination de paramètre pour résistance d'attaque de grille de transistor de commutation, et circuit Download PDF

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Publication number
WO2023193561A1
WO2023193561A1 PCT/CN2023/079884 CN2023079884W WO2023193561A1 WO 2023193561 A1 WO2023193561 A1 WO 2023193561A1 CN 2023079884 W CN2023079884 W CN 2023079884W WO 2023193561 A1 WO2023193561 A1 WO 2023193561A1
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WIPO (PCT)
Prior art keywords
turn
gate
resistance
resistor
driving
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PCT/CN2023/079884
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English (en)
Chinese (zh)
Inventor
石宏康
秦飞祥
李俊龙
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安徽威灵汽车部件有限公司
广东威灵汽车部件有限公司
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Publication of WO2023193561A1 publication Critical patent/WO2023193561A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/02—Circuits specially adapted for the generation of grid-control or igniter-control voltages for discharge tubes incorporated in static converters
    • H02M1/04—Circuits specially adapted for the generation of grid-control or igniter-control voltages for discharge tubes incorporated in static converters for tubes with grid control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present disclosure relates to the technical field of inverters, and in particular, to a method, device and circuit for determining parameters of a gate drive resistor of a switching tube.
  • silicon carbide MOS tubes are used to reduce losses and improve inverter efficiency.
  • the gate drive resistance of the silicon carbide MOS tubes there are parameters that cannot be determined for the gate drive resistance of the silicon carbide MOS tubes. The problem.
  • the present disclosure aims to solve one of the technical problems in the related art, at least to a certain extent.
  • the first object of the present disclosure is to provide a method for determining parameters of the gate drive resistance of the switching tube.
  • the second object of the present disclosure is to provide a device for determining parameters of a gate drive resistance of a switching tube.
  • a third object of the present disclosure is to provide a computer-readable storage medium.
  • the fourth object of the present disclosure is to provide a switching tube drive control circuit.
  • the fifth object of the present disclosure is to provide a motor control system.
  • a sixth object of the present disclosure is to provide a compressor.
  • a seventh object of the present disclosure is to provide a vehicle.
  • the first embodiment of the present disclosure proposes a method for determining parameters of the gate driving resistance of the switching tube.
  • the method includes: determining a first turn-on gate resistance model and a second turn-on gate resistance model, and Determine the turn-off gate resistance model; obtain the total turn-on time of the switch tube, obtain the maximum bus voltage and phase voltage change rate, and obtain the turn-on drive voltage of the switch tube; input the total turn-on time and turn-on drive voltage into the first turn-on gate Resistance model, obtain the upper limit of the turn-on resistance of the gate drive resistor, and input the maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model, obtain the lower limit of the turn-on resistance of the gate drive resistor, and combine the maximum bus voltage and
  • the phase voltage change rate is input into the turn-off gate resistance model to obtain the lower limit of the turn-on resistance of the gate drive resistor; the turn-on resistance range of the gate drive resistor is determined based on the upper limit of turn-on resistance and the lower limit of turn
  • the parameter determination method of the gate drive resistance of the switching tube by inputting the obtained total turn-on time and turn-on drive voltage into the first turn-on gate resistance model, the upper limit of the turn-on resistance of the gate drive resistor is obtained, Input the obtained maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model to obtain the lower limit of the turn-on resistance of the gate drive resistor.
  • the lower limit of the turn-off resistance of the gate drive resistor, and the turn-on resistance range of the gate drive resistor is determined by the upper limit of the turn-on resistance and the lower limit of the turn-on resistance
  • the gate drive resistor is determined by the upper limit of the turn-on resistance and the lower limit of the turn-off resistance.
  • the turn-off resistance range is used to determine the resistance of the gate drive resistor more accurately through the turn-on resistance range and the turn-off resistance range.
  • the method for determining the parameters of the gate driving resistance of the switching tube may also have the following additional features:
  • the first turn-on gate resistance model is expressed according to the following relationship:
  • ton is the total turn-on time
  • ⁇ 1 is the first derating parameter
  • VDD is the turn-on driving voltage
  • RG_on1 is the turn-on
  • the upper limit of the resistance value, f1 (VDD, RG_on1) is the functional expression corresponding to the first turn-on gate resistance model.
  • the second turn-on gate resistance model is expressed according to the following relationship:
  • ⁇ V is the phase voltage change rate
  • ⁇ 2 is the second derating parameter
  • VDC is the maximum bus voltage
  • RG_on2 is the lower limit of the turn-on resistance
  • f2 (VDC, RG_on2) is the functional expression corresponding to the second turn-on gate resistance model.
  • the turn-off gate resistance model is expressed according to the following relationship:
  • ⁇ V is the phase voltage change rate
  • ⁇ 3 is the third derating parameter
  • VDC is the maximum bus voltage
  • RG_off2 is the lower limit of the turn-off resistance.
  • the switch tube is a silicon carbide MOS tube.
  • a second embodiment of the present disclosure proposes a parameter determination device for a gate drive resistance of a switching tube, including: a first determination module for determining a first turn-on gate resistance model and a second turn-on gate resistance model. pole resistance model, and determine the turn-off gate resistance model; the acquisition module is used to obtain the total turn-on time of the switch tube, obtain the maximum bus voltage and phase voltage change rate, and obtain the turn-on driving voltage of the switch tube; the second determination module , used to input the total turn-on time and turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of the turn-on resistance of the gate drive resistor, and input the maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model, Obtain the lower limit of the turn-on resistance of the gate drive resistor, and input the maximum bus voltage and phase voltage change rate into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance of the gate drive resistor; the second determination module is also used to, according to The
  • the first on-gate resistance model, the second on-gate resistance model and the off-gate resistance model are determined through the first determination module, and the second determination module
  • the module inputs the total turn-on time and turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of the turn-on resistance of the gate drive resistor, and inputs the maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model to obtain the gate
  • the lower limit of the turn-on resistance of the pole drive resistor is entered, and the maximum bus voltage and phase voltage change rate are input into the turn-off gate resistance model to obtain the lower limit of the turn-on resistance of the gate drive resistor
  • the second determination module is based on the upper limit of the turn-on resistance and
  • the lower limit of the turn-on resistance determines the turn-on resistance range of the gate drive resistor, and the turn-off resistance range of the gate drive resistor is determined based on the upper limit of turn-on resistance and the lower
  • a third embodiment of the present disclosure provides a computer-readable storage medium on which a parameter determination program for the gate driving resistance of the switching tube is stored.
  • the parameter determination program for the gate driving resistance of the switching tube is stored thereon.
  • the parameter determination method of the gate driving resistance of the switching tube described in any of the above embodiments is implemented.
  • the switch tube drive control circuit includes a drive power supply and a drive unit, wherein the drive power supply is used to provide a forward drive voltage and a negative drive voltage to the drive unit. to the turn-off voltage; the drive unit includes a gate drive resistor.
  • the drive unit When the drive unit receives the turn-on control signal, it applies the forward drive voltage to the switch tube through the gate drive resistor to drive the switch tube to turn on, and when receiving the turn-on control signal
  • the negative turn-off voltage is applied to the switch tube through the gate drive resistor to drive the switch tube to turn off; the resistance of the gate drive resistor is determined by executing the parameters of the gate drive resistor of the switch tube described in the above embodiment. Determine how to get it.
  • the switch tube drive control circuit described in the embodiment of the present disclosure when receiving the turn-on control signal, the forward drive voltage is applied to the switch tube through the gate drive resistor in the drive unit to drive the switch tube to turn on, and upon receiving When the turn-off control signal is reached, the negative turn-off voltage is applied to the switch tube through the gate drive resistor in the drive unit to drive the switch tube to turn off.
  • the resistance of the gate drive resistor is determined by performing the steps described in the above embodiment.
  • the parameters of the gate drive resistance of the switching tube are determined by the method.
  • the driving unit further includes: a driving chip, the positive power pin of the driving chip is connected to the forward turn-on voltage supply end of the driving power supply, and the negative power supply pin of the driving chip is connected to the negative turn-on voltage supply end of the driving power supply.
  • the output pin of the driver chip is connected to the gate of the switch tube through the gate drive resistor; among them, when the driver chip receives the turn-on control signal, it connects the positive power pin to the output pin; the driver chip Shutdown control signal received signal, connect the negative power pin to the output pin.
  • the gate driving resistor includes: a first gate resistor, one end of the first gate resistor is connected to the output pin of the driver chip, and the other end of the first gate resistor is connected to the gate of the switch tube. connected; a second gate resistor, one end of the second gate resistor is connected to one end of the first gate resistor through the first diode, and the other end of the second gate resistor is connected to the other end of the first gate resistor.
  • the gate driving resistor includes: a first gate resistor, one end of the first gate resistor is connected to the output pin of the driver chip through a first diode, and the other end of the first gate resistor connected to the gate of the switch tube; a second gate resistor, one end of the second gate resistor is connected to one end of the first gate resistor through a second diode, and the other end of the second gate resistor is connected to the first gate The other end of the resistor is connected, where the anode of the first diode is connected to the cathode of the second diode.
  • the gate driving resistor includes: a first gate resistor, one end of the first gate resistor is connected to the output pin of the driver chip, and the other end of the first gate resistor passes through the first diode. Connected to the output pin of the driver chip; a second gate resistor, one end of the second gate resistor is connected to the other end of the first gate resistor, and the other end of the second gate resistor is connected to the gate of the switch tube.
  • a fifth embodiment of the present disclosure provides a motor control system, including the switch drive control circuit described in any of the above embodiments.
  • switching losses can be reduced and the safety and stability of the motor can be improved through the switch tube drive control circuit described in the above embodiments.
  • a sixth embodiment of the present disclosure provides a compressor including the motor control system described in the above embodiment.
  • the switching loss can be reduced and the safety and stability of the motor can be improved through the motor control system described in the above embodiments.
  • a seventh embodiment of the present disclosure provides a vehicle, including the device for determining the parameters of the gate drive resistance of the switch tube described in the above embodiment, or the switch tube drive control circuit described in any of the above embodiments, Or the motor control system described in the above embodiment, or the compressor described in the above embodiment.
  • Figure 1 is a circuit schematic diagram of a switch tube drive control circuit according to an embodiment of the present disclosure
  • Figure 2 is a schematic flowchart of a method for determining parameters of a gate drive resistor of a switching transistor according to an embodiment of the present disclosure
  • Figure 3 is a relationship diagram of a first turn-on gate resistance model according to an embodiment of the present disclosure
  • Figure 4 is a relationship diagram of a second turn-on gate resistance model according to an embodiment of the present disclosure.
  • Figure 5 is a relationship diagram of a turn-off gate resistance model according to an embodiment of the present disclosure.
  • Figure 6 is a structural block diagram of a device for determining parameters of a gate drive resistor of a switching tube according to an embodiment of the present disclosure
  • Figure 7 is a circuit schematic diagram of a switch transistor drive control circuit according to another embodiment of the present disclosure.
  • Figure 8 is a circuit schematic diagram of a switch transistor drive control circuit according to another embodiment of the present disclosure.
  • Figure 9 is a circuit schematic diagram of a switch transistor drive control circuit according to another embodiment of the present disclosure.
  • Figure 10 is a circuit schematic diagram of a switch transistor drive control circuit according to another embodiment of the present disclosure.
  • Figure 11 is a circuit schematic diagram of a switch transistor drive control circuit according to yet another embodiment of the present disclosure.
  • Figure 12 is a structural block diagram of a motor control system according to an embodiment of the present disclosure.
  • Figure 13 is a structural block diagram of a compressor according to an embodiment of the present disclosure.
  • Figure 14 is a structural block diagram of a vehicle according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic diagram of a switch transistor drive control circuit according to an embodiment of the present disclosure.
  • the circuit includes a driving power supply 12 and a driving unit 14 .
  • the driving power supply 12 is used to provide a positive driving voltage and a negative turn-off voltage to the driving unit 14;
  • the driving unit 14 includes a gate driving resistor 142.
  • the driving unit 14 receives the turn-on control signal, the driving unit 14 passes the forward driving voltage through The gate drive resistor 142 is applied to the switch transistor Q to drive the switch transistor Q to turn on, and when receiving the turn-off control signal, the negative turn-off voltage is applied to the switch transistor Q through the gate drive resistor 142 to drive the switch transistor Q.
  • Q turns off.
  • the driving power supply 12 when the driving unit 14 receives the turn-on control signal (for example, high level), the driving power supply 12 provides a forward driving voltage to the gate driving resistor 142. Through the gate driving resistor 142, the gate of the switch tube Q When the voltage is greater than or equal to the threshold voltage, the switch Q is turned on; when the driving unit 14 receives the shutdown control signal (for example, low level), the driving power supply 12 provides a negative driving voltage to the gate driving resistor 142, and passes through the gate driving resistor. 142. The gate voltage of switch Q is less than the threshold voltage, and switch Q is turned off.
  • the turn-on control signal for example, high level
  • the turn-on resistance of the drive resistor is the total resistance on the turn-on circuit (the resistance of Ron), and the turn-off resistance of the drive resistor is the total resistance on the turn-off circuit (Ron// Roff resistance). It should be noted that, under necessary conditions, the turn-off resistance of the driving resistor needs to consider the voltage drop of the diode, but in the embodiment of the present disclosure, the voltage drop of the diode is not considered for the time being.
  • FIG. 2 is a flow chart of a method for determining parameters of a gate driving resistance of a switching transistor according to an embodiment of the present disclosure. This parameter determination method is applied to the circuit shown in Figure 1 as an example for explanation. Referring to Figure 2, the method for determining the parameters of the gate drive resistor of the switching tube includes the following steps:
  • Step S1 Determine the first on-gate resistance model and the second on-gate resistance model, and determine the off-gate resistance model.
  • Step S2 Obtain the total turn-on time of the switch tube, obtain the maximum bus voltage and phase voltage change rate, and obtain the turn-on driving voltage of the switch tube.
  • Step S3 input the total turn-on time and turn-on drive voltage into the first turn-on gate resistance model to obtain the upper limit of turn-on resistance of the gate drive resistor, and input the maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model, Obtain the lower limit of the turn-on resistance of the gate drive resistor, and input the maximum bus voltage and phase voltage change rate into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance of the gate drive resistor.
  • Step S4 Determine the turn-on resistance range of the gate drive resistor based on the upper limit of turn-on resistance and the lower limit of turn-on resistance, determine the turn-off resistance range of the gate drive resistor based on the upper limit of turn-on resistance and the lower limit of turn-off resistance, and determine The turn-on resistance interval and the turn-off resistance interval determine the resistance value of the gate drive resistor.
  • the upper limit of the turn-on resistance of the gate drive resistor is obtained.
  • the turn-off resistance range of the resistor, and then the resistance value of the gate drive resistor can be determined more accurately through the turn-on resistance range and the turn-off resistance range, so that the resistor with this resistance value can be used as the switch tube in the switch tube drive control circuit.
  • a gate drive resistor it can reduce switching losses and improve the safety and stability of the motor.
  • the gate resistor if the gate resistor is selected too large, the switching speed will be too slow, which will not only increase the switching loss, but also need to constrain the drive pulse (PWM) dead time to prevent the bridge arm from flowing through; if the resistance of the gate drive resistor If the value is chosen too small, then The switching speed is too fast and the phase voltage change rate (dV/dt) is too high, which will cause damage to the motor. At the same time, the resistance value of the gate drive resistor is too small, which will also cause the motor's resistance to EMI (Electromagnetic Interference, electromagnetic interference). ) ability becomes worse, affecting the stability of the motor. Therefore, it is crucial to properly select the gate drive resistor value.
  • EMI Electromagnetic Interference, electromagnetic interference
  • the first turn-on gate resistance model can be used to determine the upper limit of the turn-on resistance of the gate drive resistor.
  • the expression forms of the first turn-on gate resistance model include but are not limited to neural network models, data mapping charts/tables, mathematics Relationships, etc.
  • the input of the neural network model may include the total turn-on time and turn-on driving voltage of the switching tube
  • the output of the neural network model may include the upper limit of the turn-on resistance of the gate drive resistor, so that After obtaining the total turn-on time and turn-on drive voltage of the switch tube, input the total turn-on time and turn-on drive voltage of the switch tube into the neural network model to quickly obtain the corresponding more accurate upper limit of turn-on resistance of the gate drive resistor
  • the first turn-on gate resistance model is a data map/table
  • the data map/table may include the predetermined turn-on time of different switch tubes and the upper limit of the turn-on resistance of the gate drive resistor corresponding to the turn-on drive voltage, so that After obtaining the turn-on time and turn-on drive voltage of the switch tube, the corresponding more accurate upper limit of turn-on resistance of the gate drive resistor can be quickly obtained by searching the data map/table; in the first turn-on gate resistance model
  • the second turn-on gate resistance model can be used to determine the lower limit of the turn-on resistance of the gate drive resistor.
  • the expression forms of the second turn-on gate resistance model include but are not limited to neural network models, data mapping charts/tables, mathematical relationships, etc.
  • the input of the neural network model may include the maximum bus voltage and the phase voltage change rate
  • the output of the neural network model may include the lower limit of the turn-on resistance of the gate drive resistor, thereby obtaining After reaching the maximum bus voltage and phase voltage change rate, input the maximum bus voltage and phase voltage change rate into the neural network model, and you can quickly obtain the corresponding more accurate lower limit of the turn-on resistance of the gate drive resistor; in the second turn-on gate
  • the resistance model is a data map/table
  • the data map/table can include the predetermined lower limit of the turn-on resistance of the gate drive resistor corresponding to different maximum bus voltages and phase voltage change rates, so as to obtain the maximum bus voltage and After the phase voltage change rate
  • the turn-off gate resistance model can be used to determine the lower limit of the turn-off resistance of the gate drive resistor.
  • the expression forms of the turn-off gate resistance model include but are not limited to neural network models, data mapping charts/tables, mathematical relationships, etc.
  • the input of the neural network model may include the maximum bus voltage and phase voltage change rate
  • the output of the neural network model may include the lower limit of the turn-off resistance of the gate drive resistor, thereby obtaining After reaching the maximum bus voltage and phase voltage change rate, input the maximum bus voltage and phase voltage change rate into the neural network model, and you can quickly obtain the corresponding more accurate lower limit of the turn-off resistance of the gate drive resistor; when turning off the gate
  • the resistance model is a data map/table
  • the data map/table can include the predetermined lower limit of the turn-off resistance of the gate drive resistor corresponding to different maximum bus voltages and phase voltage change rates, so as to obtain the maximum bus voltage.
  • the corresponding more accurate lower limit of the turn-off resistance of the gate drive resistor can be quickly obtained by searching the data map/table; when the turn-off gate resistance model is a mathematical relationship, the mathematical relationship It can reflect the relationship between the maximum bus voltage and phase voltage change rate and the lower limit of the turn-off resistance of the gate drive resistor. Therefore, after obtaining the maximum bus voltage and phase voltage change rate, the corresponding gate can be calculated based on this mathematical relationship.
  • the lower limit of the turn-off resistance of the drive resistor is a mathematical relationship
  • the corresponding first turn-on gate resistance model, the second turn-on gate resistance model and the turn-off gate resistance model can be determined respectively according to the model of the switch tube.
  • the expression forms of the first turn-on gate resistance models corresponding to different types of switch tubes can be the same or different.
  • the expression forms of the second turn-on gate resistance models corresponding to different types of switch tubes can be the same or different.
  • Different types of switches The expression forms of the turn-off gate resistance models corresponding to the tubes can be the same or different, and are not limited here.
  • step S4 the turn-on resistance range of the gate drive resistor is greater than or equal to the turn-on resistance lower limit and less than or equal to the turn-on resistance limit.
  • the turn-off resistance range of the gate drive resistor is greater than or equal to the lower limit of turn-on resistance and less than or equal to the upper limit of turn-off resistance. It is determined based on the turn-on resistance range, the turn-off resistance range and the connection condition of the gate drive resistor. The value of the gate drive resistor.
  • the switch transistor is a silicon carbide MOS transistor. It can be understood that silicon carbide MOS tubes have lower switching losses and higher working efficiency than ordinary MOS tubes.
  • multiple first coordinate points (RG_on1, VDD, ton) can be obtained based on a large number of simulation experiments, where RG_on1 represents the upper limit of the turn-on resistance, VDD represents the turn-on drive voltage, and ton represents the total turn-on time, and then combined with the first Derating parameters, determine the first turn-on gate resistance model through polynomial fitting.
  • multiple second coordinate points (RG_on2, VDC, ⁇ V) can be obtained based on a large number of simulation experiments, where RG_on2 represents the lower limit of the turn-on resistance, VDC represents the maximum bus voltage, and ⁇ V represents the phase voltage change rate, and then combined with the third
  • the second derating parameter is determined by polynomial fitting to determine the second turn-on gate resistance model.
  • RG_off2 represents the lower limit of the turn-off resistance
  • VDC represents the maximum bus voltage
  • ⁇ V represents the phase voltage change rate
  • the total turn-on time of the switch tube is the sum of the turn-on delay time and rise time of the switch tube.
  • a function graph as shown in Figure 3 can be drawn (taking the critical value 667ns as an example).
  • the total turn-on time ton of the switch tube is negatively correlated with the turn-on drive voltage VDD.
  • the drive voltage VDD gradually increases, the total turn-on time ton becomes smaller; the upper limit of the turn-on resistance RG_on1 is positively correlated with the turn-on drive voltage VDD.
  • a function graph as shown in Figure 4 can be drawn (taking the critical value 30V/ns as an example).
  • the phase voltage change rate ⁇ V has a positive correlation with the maximum bus voltage VDC.
  • the phase voltage change rate ⁇ V gradually increases, the maximum bus voltage VDC becomes larger; the phase voltage change rate ⁇ V has a positive correlation with the lower limit of the turn-on resistance RG_on2.
  • the lower limit of the turn-on resistance RG_on2 becomes smaller.
  • the maximum bus voltage VDC and the lower limit of the turn-on resistance RG_on2 have a positive correlation.
  • the turn-on resistance lower limit RG_on2 becomes smaller.
  • the lower resistance limit RG_on2 becomes larger.
  • a function graph as shown in Figure 5 can be drawn (taking the critical value 30V/ns as an example).
  • the phase voltage change rate ⁇ V has a positive correlation with the maximum bus voltage VDC.
  • the phase voltage change rate ⁇ V gradually increases, the maximum bus voltage VDC becomes larger; the phase voltage change rate ⁇ V has a negative correlation with the lower limit of the turn-off resistance RG_off2.
  • the turn-off resistance The value lower limit RG_off2 becomes smaller; the maximum bus voltage VDC and the shutdown resistance lower limit RG_off2 are positively correlated.
  • the shutdown resistance lower limit RG_off2 becomes larger.
  • the total turn-on time ton of the switching tube satisfies ton ⁇ tDB, where tDB is the dead time.
  • the phase voltage change rate ⁇ V satisfies ⁇ V ⁇ Vmax, where ⁇ Vmax is the maximum phase voltage change rate allowed by the inverter system.
  • an embodiment of the present disclosure proposes a parameter determination device 60 for a gate drive resistor of a switching tube.
  • the parameter determination device 60 can implement the parameter determination method of any of the above embodiments.
  • the parameter determination device 60 includes a first determination module 601 , an acquisition module 602 and a second determination module 603 .
  • the first determination module 601 is used to determine the first on-gate resistance model and the second on-gate resistance model, and determine the off-gate resistance model.
  • the acquisition module 602 is used to obtain the total turn-on time of the switch tube, obtain the maximum bus voltage and phase voltage change rate, and obtain the turn-on driving voltage of the switch tube.
  • the second determination module 603 is used to input the total turn-on time and turn-on drive voltage into the first turn-on gate resistance model, obtain the upper limit of the turn-on resistance of the gate drive resistor, and input the maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model.
  • the gate resistance model is used to obtain the lower limit of the turn-on resistance of the gate drive resistor, and the maximum bus voltage and phase voltage change rate are input into the turn-off gate resistance model to obtain the lower limit of the turn-off resistance of the gate drive resistor.
  • the second determination module 603 is also used to determine the turn-on resistance range of the gate drive resistor based on the upper limit of turn-on resistance and the lower limit of turn-on resistance, and determine the turn-off resistance of the gate drive resistor based on the upper limit of turn-on resistance and the lower limit of turn-off resistance. value range, and determine the resistance value of the gate drive resistor based on the turn-on resistance range and the turn-off resistance range.
  • the first on-gate resistance model, the second on-gate resistance model and the off-gate resistance model are determined through the first determination module 601.
  • the second determination module 603 inputs the total turn-on time and turn-on drive voltage into the first turn-on gate resistance model, obtains the upper limit of turn-on resistance of the gate drive resistor, and inputs the maximum bus voltage and phase voltage change rate into the second turn-on gate resistance model.
  • the upper limit of resistance and the lower limit of turn-on resistance determine the turn-on resistance range of the gate drive resistor, and the turn-off resistance range of the gate drive resistor is determined according to the upper limit of turn-on resistance and the lower limit of turn-off resistance, and according to the turn-on resistance range and The turn-off resistance range determines the resistance of the gate drive resistor, and then The resistance of the gate drive resistor can be determined more accurately through the turn-on resistance range and the turn-off resistance range, so that when a resistor with this resistance is used as the gate drive resistor of the switch tube in the switch tube drive control circuit, the switch can be reduced. loss and improve the safety and stability of the motor.
  • VDC is the maximum bus voltage
  • RG_on2 is the lower limit of the turn-on resistance
  • f2 (VDC, RG_on2) is the functional expression corresponding to the second turn-on gate resistance model.
  • the switch transistor is a silicon carbide MOS transistor.
  • parameter determination device 60 of the gate drive resistance of the switch tube please refer to the aforementioned description of the parameter determination method of the gate drive resistance of the switch tube, which will not be described in detail here.
  • embodiments of the present disclosure also provide a computer-readable storage medium on which a parameter determination program for the gate driving resistance of the switching tube is stored.
  • the parameter determination program for the gate driving resistance of the switching tube is processed.
  • the parameter determination method of the gate driving resistance of the switching tube described in any of the above embodiments is implemented.
  • the computer-readable storage medium when the stored parameter determination program of the gate driving resistance of the switching tube is executed by the processor, by executing the above-mentioned parameter determination method of the gate driving resistance of the switching tube, it is possible to turn on The resistance range and the turn-off resistance range more accurately determine the resistance of the gate drive resistor, so that when a resistor with this resistance is used as the gate drive resistor of the switch tube in the switch tube drive control circuit, the switching loss can be reduced. Improve the safety and stability of the motor.
  • FIG. 7 is a schematic diagram of a switch transistor drive control circuit according to an embodiment of the present disclosure.
  • the switching tube driving control circuit 10 includes a driving power supply 12 and a driving unit 14 .
  • the driving power supply 12 is used to provide a positive driving voltage and a negative turn-off voltage to the driving unit 14;
  • the driving unit 14 includes a gate driving resistor 142.
  • the driving unit 14 receives the turn-on control signal, the driving unit 14 passes the forward driving voltage through The gate drive resistor 142 is applied to the switch transistor Q to drive the switch transistor Q to turn on, and when receiving the turn-off control signal, the negative turn-off voltage is applied to the switch transistor Q through the gate drive resistor 142 to drive the switch transistor Q.
  • Q turns off.
  • the resistance value of the gate driving resistor 142 is obtained by executing the parameter determination method of the gate driving resistor of the switching tube described in any of the above embodiments.
  • the switch drive control circuit 10 by inputting the obtained total turn-on time and turn-on drive voltage into the first turn-on gate resistance model, the upper limit of the turn-on resistance of the gate drive resistor is obtained, and the obtained The maximum bus voltage and phase voltage change rate are input into the second turn-on gate resistance model to obtain the lower limit of the turn-on resistance of the gate drive resistor. The maximum bus voltage and phase voltage change rate are input into the turn-off gate resistance model to obtain the gate drive resistance.
  • the lower limit of the turn-off resistance is determined, and the turn-on resistance range of the gate drive resistor is determined by the upper limit of the turn-on resistance and the lower limit of the turn-on resistance, and the turn-off resistance of the gate drive resistor is determined by the upper limit of the turn-on resistance and the lower limit of the turn-off resistance. value range, and then more accurately determine the resistance value of the gate drive resistor through the turn-on resistance range and the turn-off resistance range, so that the resistor with this resistance value is used as the gate drive resistor of the switch tube in the switch tube drive control circuit 10 When switching, it can reduce switching losses and improve the safety and stability of the motor.
  • the driving power supply 12 when the driving unit 14 receives the turn-on control signal (for example, high level), the driving power supply 12 provides a forward driving voltage to the gate driving resistor 142. Through the gate driving resistor 142, the gate of the switch tube Q When the voltage is greater than or equal to the threshold voltage, the switch Q is turned on; when the driving unit 14 receives the shutdown control signal (for example, low level), the driving power supply 12 provides a negative driving voltage to the gate driving resistor 142, and passes through the gate driving resistor. 142. The gate voltage of switch Q is less than the threshold voltage, and switch Q is turned off.
  • the turn-on control signal for example, high level
  • the driving unit 14 also includes a driving chip U1, the positive power supply pin VDD of the driving chip U1 is connected to the forward turn-on voltage supply terminal A of the driving power supply 12, and the negative power supply tube of the driving chip U1
  • the pin VSS is connected to the negative turn-off voltage supply terminal B of the driving power supply 12, and the output pin OUT of the driving chip U1 is connected to the gate of the switch tube Q through the gate driving resistor 142; among them, the driving chip U1 receives the turn-on control
  • the positive power supply pin VDD is connected to the output pin OUT; when the driver chip U1 receives the shutdown control signal, the negative power supply pin VSS is connected to the output pin OUT.
  • the driver chip U1 when the driver chip U1 receives the turn-on control signal (for example, high level), the positive power supply pin VDD of the driver chip U1 receives the forward turn-on voltage supply terminal A.
  • the driving voltage, the positive power supply pin VDD is connected to the output pin OUT, and passes through the gate driving resistor 142.
  • the gate voltage of the switch tube Q is greater than or equal to the threshold voltage, and the switch tube Q is turned on; the driver chip U1 receives the shutdown control signal ( For example, when low level), the negative power supply pin VSS of the driver chip U1 receives the negative driving voltage provided by the negative shutdown voltage supply terminal B.
  • the negative power supply pin VSS is connected to the output pin OUT and is driven by the gate. Resistor 142, the gate voltage of switch Q is less than the threshold voltage, and switch Q is turned off.
  • the gate drive resistor 142 includes a first gate resistor Ron and a second gate resistor Roff.
  • one end of the first gate resistor Ron is connected to the output pin OUT of the driver chip U1, and the other end of the first gate resistor Ron is connected to the gate of the switch tube Q; one end of the second gate resistor Roff passes through the first
  • the diode D1 is connected to one end of the first gate resistor Ron, and the other end of the second gate resistor Roff is connected to the other end of the first gate resistor Ron.
  • the driver chip U1 when the driver chip U1 receives a turn-on control signal (for example, high level), the positive power supply pin VDD of the driver chip U1 receives the forward drive voltage provided by the forward turn-on voltage supply terminal A, and the positive power supply pin
  • the pin VDD is connected to the output pin OUT, and through the first gate resistor Ron, the gate voltage of the switch tube Q is greater than or equal to the threshold voltage, and the switch tube Q is turned on;
  • the driver chip U1 receives the shutdown control signal (for example, low level )
  • the negative power supply pin VSS of the driver chip U1 receives the negative driving voltage provided by the negative turn-off voltage supply terminal B.
  • the negative power supply pin VSS is connected to the output pin OUT, and passes through the first gate resistor Ron and the second gate resistor Ron.
  • the two gate resistors Roff and the first diode D1 the gate voltage of the switch tube Q is less than the threshold voltage, and the switch tube Q is turned off.
  • the gate driving resistor 142 includes a first gate resistor Ron and a second gate resistor Roff.
  • one end of the first gate resistor Ron is connected to the output pin of the driver chip U1 through the first diode D1, and the other end of the first gate resistor Ron is connected to the gate of the switch Q;
  • the second gate resistor One end of Roff is connected to one end of the first gate resistor Ron through the second diode D2, and the other end of the second gate resistor Roff is connected to the other end of the first gate resistor Ron, where the first diode D1 The anode is connected to the cathode of the second diode D2.
  • the driver chip U1 when the driver chip U1 receives a turn-on control signal (for example, high level), the positive power supply pin VDD of the driver chip U1 receives the forward drive voltage provided by the forward turn-on voltage supply terminal A, and the positive power supply pin The pin VDD is connected to the output pin OUT.
  • the gate voltage of the switch tube Q is greater than or equal to the threshold voltage, and the switch tube Q is turned on; the driver chip U1 receives the shutdown control.
  • the signal when the signal is low (for example, low level), the negative power supply pin VSS of the driver chip U1 receives the negative driving voltage provided by the negative shutdown voltage supply terminal B, and the negative power supply pin VSS is connected to the output pin OUT.
  • the second gate resistor Roff and the second diode D2 the gate voltage of the switch tube Q is less than the threshold voltage, and the switch tube Q is turned off.
  • the gate driving resistor 142 includes a first gate resistor Ron and a second gate resistor Roff.
  • One end of the first gate resistor Ron is connected to the output pin OUT of the driver chip U1, and the other end of the first gate resistor Ron is connected to the output pin OUT of the driver chip U1 through the first diode D1;
  • the second gate One end of the resistor Roff is connected to the other end of the first gate resistor Ron, and the other end of the second gate resistor Roff is connected to the gate of the switch transistor Q.
  • the driver chip U1 when the driver chip U1 receives a turn-on control signal (for example, high level), the positive power supply pin VDD of the driver chip U1 receives the forward drive voltage provided by the forward turn-on voltage supply terminal A, and the positive power supply pin The pin VDD is connected to the output pin OUT.
  • a turn-on control signal for example, high level
  • the gate voltage of the switch tube Q is greater than Equal to the threshold voltage, the switch Q is turned on; when the driver chip U1 receives a shutdown control signal (for example, low level), the negative power supply pin VSS of the driver chip U1 receives a negative turn-off, and the negative power supply pin VSS is connected to The output pin OUT is connected, and through the second gate resistor Roff and the first diode D1, the gate voltage of the switch tube Q is less than the threshold voltage, and the switch tube Q is turned off.
  • a shutdown control signal for example, low level
  • the resistance of the gate drive resistor 142 on the turn-on loop may not be equal to the resistance of the gate drive resistor 142 on the turn-off loop when the switch Q is turned off ( turn-off resistance).
  • embodiments of the present disclosure also provide a motor control system.
  • the motor control system 100 includes a switching tube drive control circuit 10 .
  • the switching transistor drive control circuit 10 described in the above embodiments can reduce switching losses and improve the safety and stability of the motor.
  • embodiments of the present disclosure also provide a compressor.
  • the compressor 200 includes a motor control system 100 .
  • the switching loss can be reduced and the safety and stability of the motor can be improved through the motor control system 100 described in the above embodiment.
  • the embodiment of the present disclosure proposes a vehicle that includes the parameter determination device 60 for the gate drive resistance of the switch tube described in the above embodiment, or the vehicle includes the switch tube drive control circuit 10 described in any of the above embodiments, or The vehicle includes the motor control system 100 described in the above embodiment, or the vehicle includes the compressor 200 described in the above embodiment. In the embodiment shown in FIG. 14 , the vehicle 300 includes the compressor 200 described in the above embodiment.
  • the vehicle may be a new energy vehicle.
  • the new energy vehicle may be a pure electric vehicle with an electric motor as the main driving force.
  • the new energy vehicle may also use an internal combustion engine and an electric motor as the main driving force at the same time.
  • Powerful hybrid vehicles Regarding the internal combustion engine and motor that provide driving power for new energy vehicles mentioned in the above embodiments, the internal combustion engine can use gasoline, diesel, hydrogen, etc. as fuel, and the way to provide electric energy to the motor can use power batteries, hydrogen fuel cells, etc., There are no special restrictions here. It should be noted that this is only an exemplary description of the structure of new energy vehicles and other structures, and is not intended to limit the scope of the present disclosure.
  • the compressor applicable to the above-mentioned new energy vehicles according to the embodiments of the present disclosure may be an electric compressor including a driving part and a compression part.
  • the driving part in the electric compressor drives the compression part to perform compression.
  • the driving part may be a driving motor including a rotor and a stator.
  • the electric compressor may be a low back pressure compressor, the driving part may be disposed in a low-pressure chamber connected to the suction port of the compressor, and the compression part may be disposed in a low-pressure chamber connected to the exhaust port of the compressor. High pressure chamber.
  • the electric compressor may be a horizontal compressor, and the driving part and the compression part may be arranged transversely, and so on.
  • the parameter determination device 60 of the gate driving resistance of the switching tube described in the above embodiment, or the switching tube drive control circuit 10 described in any of the above embodiments, or the motor described in the above embodiment can reduce switching losses and improve the safety and stability of the motor.
  • a "computer-readable medium” may be any medium that can contain, store, communicate, propagate, or transport a program for or in connection with a system, apparatus, or device for executing instructions. A device used for installation or equipment.
  • Non-exhaustive list of computer readable media include the following: electrical connections with one or more wires (electronic device), portable computer disk cartridges (magnetic device), random access memory (RAM), Read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and portable compact disc read-only memory (CDROM).
  • the computer-readable medium may even be paper or other suitable medium on which the program may be printed, as the paper or other medium may be optically scanned, for example, and subsequently edited, interpreted, or otherwise suitable as necessary. process to obtain the program electronically and then store it in computer memory.
  • various parts of the present disclosure may be implemented in hardware, software, firmware, or combinations thereof.
  • various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system.
  • a logic gate circuit with a logic gate circuit for implementing a logic function on a data signal.
  • Discrete logic circuits application specific integrated circuits with suitable combinational logic gates, programmable gate arrays (PGA), field programmable gate arrays (FPGA), etc.
  • first and second used in the embodiments of the present disclosure are only used for descriptive purposes and may not be understood to indicate or imply relative importance, or to implicitly indicate what is indicated in this embodiment. number of technical features. Therefore, features defined by terms such as “first” and “second” in the embodiments of the present disclosure may explicitly or implicitly indicate that the embodiment includes at least one of the features.
  • the word "plurality” means at least two or two and more, such as two, three, four, etc., unless otherwise clearly and specifically limited in the embodiment.
  • connection can It can be a fixed connection, or it can be a detachable connection, or it can be integrated. It can be understood that it can also be a mechanical connection, an electrical connection, etc.; of course, it can also be a direct connection, or an indirect connection through an intermediate medium, or it can be two The internal connection between components, or the interaction between two components.
  • connection can It can be a fixed connection, or it can be a detachable connection, or it can be integrated. It can be understood that it can also be a mechanical connection, an electrical connection, etc.; of course, it can also be a direct connection, or an indirect connection through an intermediate medium, or it can be two The internal connection between components, or the interaction between two components.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

Sont divulgués dans la présente divulgation un procédé et un dispositif de détermination de paramètre pour une résistance d'attaque de grille d'un transistor de commutation, et un circuit. Le procédé comprend : l'entrée d'un temps d'activation total et d'une tension d'activation obtenus dans un premier modèle de résistance de grille d'activation pour obtenir une limite supérieure de résistance d'activation de la résistance d'attaque de grille, l'entrée d'une tension de bus maximale et d'un taux de changement de tension de phase obtenus dans un second modèle de résistance de grille d'activation pour obtenir une limite inférieure de résistance d'activation de la résistance d'attaque de grille, et l'entrée de la tension de bus maximale et du taux de changement de tension de phase dans un modèle de résistance de grille de désactivation pour obtenir une limite inférieure de résistance de désactivation de la résistance d'attaque de grille ; et la détermination d'un intervalle de résistance d'activation de la résistance d'attaque de grille en fonction de la limite supérieure de résistance d'activation et de la limite inférieure de résistance de désactivation, la détermination d'un intervalle de résistance de désactivation de la résistance d'attaque de grille en fonction de la limite supérieure de résistance d'activation et de la limite inférieure de résistance de désactivation, puis la détermination précise de la résistance de la résistance d'attaque de grille au moyen de l'intervalle de résistance d'activation et de l'intervalle de résistance de désactivation.
PCT/CN2023/079884 2022-04-07 2023-03-06 Procédé et dispositif de détermination de paramètre pour résistance d'attaque de grille de transistor de commutation, et circuit WO2023193561A1 (fr)

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CN202210364016.5A CN114614655A (zh) 2022-04-07 2022-04-07 开关管的栅极驱动电阻的参数确定方法、装置及电路
CN202210364016.5 2022-04-07

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CN114614655A (zh) * 2022-04-07 2022-06-10 安徽威灵汽车部件有限公司 开关管的栅极驱动电阻的参数确定方法、装置及电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203574623U (zh) * 2013-11-07 2014-04-30 广东美的制冷设备有限公司 一种igbt驱动电路
CN110224688A (zh) * 2019-05-08 2019-09-10 吉林大学 一种氮化镓功率器件驱动系统
WO2021085316A1 (fr) * 2019-10-31 2021-05-06 パナソニックＩｐマネジメント株式会社 Système de commutation
CN114019241A (zh) * 2021-11-11 2022-02-08 江苏科技大学 功率器件驱动电路中电阻阻值的确定方法及装置
CN114614655A (zh) * 2022-04-07 2022-06-10 安徽威灵汽车部件有限公司 开关管的栅极驱动电阻的参数确定方法、装置及电路

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203574623U (zh) * 2013-11-07 2014-04-30 广东美的制冷设备有限公司 一种igbt驱动电路
CN110224688A (zh) * 2019-05-08 2019-09-10 吉林大学 一种氮化镓功率器件驱动系统
WO2021085316A1 (fr) * 2019-10-31 2021-05-06 パナソニックＩｐマネジメント株式会社 Système de commutation
CN114019241A (zh) * 2021-11-11 2022-02-08 江苏科技大学 功率器件驱动电路中电阻阻值的确定方法及装置
CN114614655A (zh) * 2022-04-07 2022-06-10 安徽威灵汽车部件有限公司 开关管的栅极驱动电阻的参数确定方法、装置及电路

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