WO2023185898A1 - Pixel circuit and display screen - Google Patents

Pixel circuit and display screen Download PDF

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Publication number
WO2023185898A1
WO2023185898A1 PCT/CN2023/084571 CN2023084571W WO2023185898A1 WO 2023185898 A1 WO2023185898 A1 WO 2023185898A1 CN 2023084571 W CN2023084571 W CN 2023084571W WO 2023185898 A1 WO2023185898 A1 WO 2023185898A1
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WO
WIPO (PCT)
Prior art keywords
transistor
pixel circuit
voltage
node
control signal
Prior art date
Application number
PCT/CN2023/084571
Other languages
French (fr)
Chinese (zh)
Inventor
高取宪一
寺西康幸
Original Assignee
华为技术有限公司
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Publication of WO2023185898A1 publication Critical patent/WO2023185898A1/en

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Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/06Adjustment of display parameters
    • G09G2320/0626Adjustment of display parameters for control of overall brightness
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving

Definitions

  • the present invention relates to the field of display technology, and in particular to a pixel circuit and a display screen.
  • OLED displays made of organic light-emitting diodes do not require a backlight, and have high contrast, thin thickness, wide viewing angle, fast response speed, can be used in flexible panels, and a wide operating temperature range Its excellent characteristics such as simple structure and simple manufacturing process make it widely used in various display devices.
  • the organic light-emitting diodes in the OLED display are driven by pixel circuits to emit light.
  • the transistors used in existing pixel circuits are usually low temperature polycrystalline silicon (LTPS) thin film transistors (TFT).
  • LTPS TFT has high on-current and is suitable for working under high frequency conditions.
  • the power consumption in the high-frequency working state is relatively large, and it is difficult to meet the demand for products to work in the low-frequency state to achieve low power consumption. Therefore, how to design a pixel circuit that can be adapted to operate in a low-frequency state without affecting the light-emitting state of the organic light-emitting diode is an urgent technical problem that those skilled in the art need to solve.
  • the embodiment of the present application discloses a pixel circuit and a display screen, which can be adapted to work in a low-frequency state to reduce power consumption without affecting the light-emitting state of the organic light-emitting diode.
  • embodiments of the present application provide a pixel circuit, which includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a driving transistor, a first capacitor, a second capacitor, and a Light emitting diode;
  • the first transistor, the third transistor, the fourth transistor and the fifth transistor are indium gallium zinc oxide thin film transistors, and the second transistor and the driving transistor are low temperature polysilicon thin film transistors;
  • the first electrode of the first transistor, the first electrode of the fifth transistor, the first end of the first capacitor and the first end of the second capacitor are electrically connected and intersect at the first node;
  • the second end of the second capacitor, the first electrode of the fourth transistor and the gate of the drive transistor are electrically connected to intersect at the second node;
  • the second electrode of the first transistor, the first electrode of the driving transistor and the first electrode of the second transistor are electrically connected and intersect at a third node;
  • the second electrode of the driving transistor, the first electrode of the third transistor and the anode of the light-emitting diode are electrically connected to intersect at a fourth node, and the cathode of the light-emitting diode is grounded;
  • the second end of the first capacitor is connected to the second electrode of the second transistor, and the second electrode of the second transistor is used to input the power supply voltage;
  • the gates of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor are respectively used to input gate control signals;
  • the second electrode of the fifth transistor is used to input a data voltage
  • the second electrode of the third transistor is used to input a first initialization control signal
  • the second electrode of the fourth transistor is used to input a second initialization control signal.
  • the first crystal tube, the third transistor and the fourth transistor are turned on, the second transistor and the fifth transistor are turned off; the voltage of the fourth node is initialized to the first initialization control signal, and the third transistor is turned off.
  • the voltages of the two nodes are initialized to the second initialization control signal, and the voltages of the third node and the first node are both the difference between the second initialization control signal and the threshold voltage of the driving transistor.
  • the first transistor and the fifth transistor are turned on, and the second transistor, the third transistor and the fourth transistor are Turn off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
  • the second transistor is turned on, and the first transistor, the third transistor, the fourth transistor and the fifth transistor are turned off. ;
  • the driving current generated based on the power supply voltage input by the second electrode of the second transistor drives the light-emitting diode to emit light.
  • the first transistor, the fourth transistor and the fifth transistor in the leakage path of the first capacitor and the second capacitor used to store data voltage all use indium gallium zinc oxide thin film transistors.
  • the third transistor connected to the light-emitting diode also uses an indium gallium zinc oxide thin film transistor. This reduces the leakage current of the pixel circuit as a whole, keeps the voltage of the pixel circuit stable, and optimizes the display effect of the light-emitting diode.
  • the voltage compensation stage and the data writing stage of the pixel circuit can be controlled separately, so that the compensation time can be flexibly adjusted, the compensation result can be optimized, and the display effect can be optimized.
  • the pixel circuit further includes a sixth transistor, a first electrode of the sixth transistor is electrically connected to the third node, and a second electrode of the sixth transistor is used to input a third Initialize control signals.
  • the sixth transistor is an indium gallium zinc oxide thin film transistor; or, the sixth transistor is a low temperature polysilicon thin film transistor.
  • the sixth transistor can be used to initialize the voltage at the third node in the initialization phase, reducing the impact of the residual charge of the previous frame signal at the third node on the voltage compensation phase. , optimizes the effect of voltage compensation, further improves the problem of LED display flicker, and optimizes the display effect of LEDs.
  • the pixel circuit further includes a third capacitor, a first terminal of the third capacitor is electrically connected to the first node, and a second terminal of the third capacitor is electrically connected to the The third node.
  • the voltage difference of the third capacitor can be used to maintain the voltage at the third node during the light emitting stage.
  • the change in gate voltage of the driving transistor relative to the source voltage decreases, that is, Vgs decreases.
  • the third capacitor can stabilize the voltage, keep Vgs stable and reduce the fluctuation of Vgs, which is equivalent to the effect of voltage compensation, making the voltage compensation effect of the entire pixel circuit more significant.
  • the gate control signal of the fifth transistor and the gate control signal of the sixth transistor are control signals from different rows of gate drive circuits in the same group of gate drive circuits.
  • the gate drive circuit is arranged in the outer edge area of the display area of the display device, reusing a group of gate drive circuits can reduce the number of drive circuits, thereby reducing the number of drive circuits in the outer edge area of the display area. area to reduce the width of the display screen.
  • the sixth transistor, the first transistor, the third transistor and the fourth transistor are turned on, and the second transistor and the The fifth transistor is turned off; the voltage of the fourth node is initialized to the first initialization control signal, the voltage of the second node is initialized to the second initialization control signal, and the voltage of the third node is initialized to The third initialization control signal;
  • the sixth transistor is turned off, and the states of the remaining transistors remain as described.
  • the voltages of the third node and the first node are both the difference between the second initialization control signal and the threshold voltage of the driving transistor.
  • the first transistor and the fifth transistor are turned on, and the second transistor, the third transistor, and the fourth transistor are and the sixth transistor is turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
  • the gate control signals of the first transistor and the fourth transistor are the same signal.
  • the fifth transistor is turned on, and the first transistor, the second transistor, the third transistor, the fourth transistor and The sixth transistor is turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
  • the gate drive circuit is arranged in the outer edge area of the display area of the display device, reusing the same gate drive signal can reduce the number of drive circuits, thereby reducing the number of drive circuits in the outer edge area of the display area. area to reduce the width of the display screen.
  • the second transistor is turned on, and the first transistor, the third transistor, the fourth transistor, the fifth transistor and the The sixth transistor is turned off; the driving current generated based on the power supply voltage input by the second electrode of the second transistor drives the light-emitting diode to emit light.
  • the luminous brightness of the light-emitting diode is adjusted by performing pulse width modulation on the gate control signals of the second transistor and the third transistor.
  • the brightness of the light-emitting diode can be adjusted by performing pulse width modulation on the gate control signals of the second transistor and the third transistor.
  • the pixel circuit provided by the embodiment of the present application can separately control the voltage compensation stage and the data writing stage of the pixel circuit, thereby flexibly adjusting the compensation time, optimizing the compensation results, and further optimizing the display effect.
  • inventions of the present application provide a display screen.
  • the display screen includes a pixel circuit, a gate drive circuit, a display drive chip and a power supply chip; the gate drive circuit is used to provide a gate for the pixel circuit.
  • Control signals the display driver chip is used to provide initialization control signals and data voltages for the pixel circuit, the power chip is used to provide power signals for the pixel circuit; the pixel circuit is any one of the above first aspects The pixel circuit.
  • Figure 1 shows a schematic diagram of a pixel circuit
  • Figure 2 shows a schematic structural diagram of a display device provided by an embodiment of the present application
  • Figure 3 shows a schematic structural diagram of a display device provided by an embodiment of the present application
  • Figure 4 shows a schematic diagram of a pixel circuit provided by an embodiment of the present application
  • Figure 5 shows a timing diagram of a pixel circuit provided by an embodiment of the present application
  • Figure 6 shows a schematic diagram of a pixel circuit provided by an embodiment of the present application.
  • Figure 7 shows a timing diagram of a pixel circuit provided by an embodiment of the present application.
  • Figure 8 shows a schematic diagram of a pixel circuit provided by an embodiment of the present application.
  • Figure 9 shows a timing diagram of a pixel circuit provided by an embodiment of the present application.
  • Figure 10 shows a schematic diagram of the simulation results of the voltage compensation effect provided by the embodiment of the present application.
  • Figure 11 shows a schematic diagram of the compensation effect provided by the embodiment of the present application.
  • FIG. 12 shows a timing diagram of a pixel circuit provided by an embodiment of the present application.
  • FIG. 1 shows the circuit structure of a conventional pixel circuit.
  • the pixel circuit includes 7 thin film transistors (TFT), 1 capacitor Cst and organic light-emitting diode (OLED).
  • the seven TFTs are T1, T2, T3, T4, T5, T6 and DT shown in Figure 1 respectively.
  • T1 and T4 are indium gallium zinc oxide (IGZO) TFTs
  • transistors T2, T3, T5, T6 and DT are low temperature polycrystalline silicon (LTPS) TFTs.
  • the DT is a drive transistor, used to drive the OLED to emit light.
  • the specific connection relationship between the seven TFTs, the capacitor Cst and the OLED is shown in Figure 1 and will not be described again here.
  • Thin film transistor TFT is a field effect transistor, so the three electrodes of TFT are source, gate and drain.
  • the TFT can control its own on and off by inputting a control signal from the gate.
  • the turn-on and turn-off of the transistor T1 can be controlled by the gate control signal IGZO G1.
  • the gate control signal IGZO G1 uses IGZO to indicate that the control signal is a control signal that controls the IGZO TFT.
  • the G in G1 indicates the control signal input to the gate.
  • the 1 in G1 is a serial number. Use To distinguish the control signals of different transistors. The meanings of the symbols representing the gate control signals of the transistors described later can be referred to the description here, and will not be described again.
  • the turn-on and turn-off of the transistor T2 and the transistor T6 can be controlled by the gate control signal LTPS G2.
  • the turn-on and turn-off of the transistor T3 can be controlled by the gate control signal LTPS G3.
  • the turn-on and turn-off of the transistor T4 can be controlled by the gate control signal IGZO G4.
  • the turn-on and turn-off of the transistor T5 can be controlled by the gate control signal LTPS
  • vinit1 and vinit2 are initialization control signals, which can be an input voltage used to initialize the circuit.
  • V data is a voltage that represents pixel data. The voltage V data is written into the circuit and can be used to control the luminance of the OLED.
  • Vss represents the ground terminal voltage.
  • the initialization of the pixel circuit, voltage compensation, data writing and OLED lighting can be achieved.
  • the initialization of the pixel circuit can restore the pixel circuit to its initial state, reducing the impact of the pixels of the previous frame image on the pixel display of the next frame image.
  • the transistor T4 and the transistor T3 can be controlled to be turned on and other transistors turned off through the gate control signal IGZO G4 and the gate control signal LTPS G3.
  • the voltage at node N4 is initialized to vinit2, that is, the anode of the OLED is reset.
  • the voltage at node N1 can be initialized to vinit1.
  • Voltage compensation compensates for voltage drops caused by transistor leakage and manufacturing process issues in the circuit.
  • Data writing is to save pixel data in the form of voltage into the capacitor of the pixel circuit.
  • the transistor T5 is controlled to be turned on by the gate control signal LTPS G5
  • the transistor T1 is controlled to be turned on by the gate control signal IGZO G1
  • the other transistors are turned off.
  • the transistor DT since the voltage of the gate of the transistor DT is lower than the voltage of the source of the transistor DT (the electrode connected to the node N2 of the transistor DT in FIG. 1), the transistor DT is also turned on. This is because the conduction of the transistor DT is controlled by the voltage V gs .
  • Vgs is the voltage difference between the voltage at the gate of transistor DT relative to the voltage at the source.
  • Vth is the threshold voltage of transistor DT.
  • the data voltage V data charges the capacitor Cst through the turned-on transistor T5, the transistor DT, and the transistor T1, that is, the data voltage V data charges the gate of the transistor DT.
  • the gate voltage of the transistor DT gradually increases.
  • the voltage at the node N2 is V data , that is, the voltage at the source of the transistor DT is V data .
  • the voltage at node N1 is V data +V th . Since transistor T1 is turned on, the voltage at node N3 is equal to the voltage at node N1. That is, the voltage at node N3 is V data +V th .
  • the process of OLED emitting light is the process of driving OLED to emit light through driving current.
  • the transistors T2 and T6 are controlled to be turned on by the gate control signal LTPS G2, and the other transistors are turned off.
  • the driving current generated by VDD flows through the transistor DT and drives the OLED to emit light.
  • the capacitor Cst can control the gate voltage of the transistor DT, so that the transistor DT can be turned on normally.
  • the size of the driving current can be expressed by the following formula:
  • represents the carrier mobility of the transistor DT
  • W is the width of the channel in the transistor DT
  • L is the length of the channel in the transistor DT
  • C ox is the gate oxide capacitance per unit area of the transistor DT
  • V gs is the transistor The voltage of DT's gate relative to its source.
  • the source voltage of transistor DT is the voltage at node N2. Since transistor T6 is turned on, the voltage at node N2 is equal to VDD.
  • the transistors T2, T3, T5, T6 and DT are LTPS TFTs.
  • the on-current of LTPS TFTs is high, but the leakage current is also high.
  • the circuit operates in a low-frequency state (for example, the frequency is 1 to 10 Hz)
  • high leakage current will cause the voltage of the circuit to slowly decrease, causing the OLED to emit different brightness at different times, causing flickering problems.
  • the leakage current of transistors T5 and T2 is too large, which affects the effect of data writing and voltage compensation.
  • embodiments of the present application provide a pixel circuit and a display device.
  • the pixel circuit can reduce leakage current, thereby maintaining the stability of the circuit voltage and reducing the problem of OLED light flickering.
  • the voltage compensation stage and the data writing stage of the pixel circuit can be controlled separately, so that the compensation time can be flexibly adjusted, the compensation results can be optimized, and the display effect can be optimized.
  • a schematic circuit structure diagram of a display device 200 provided by an embodiment of the present application is exemplarily introduced.
  • the display device 200 may be a display screen.
  • the display device 200 includes a display screen substrate 210 and a circuit board 220 .
  • the display screen substrate 210 includes multiple pixel circuits, and one pixel circuit 211 is shown in FIG. 2 as an example.
  • the pixel circuit 211 is connected to the light-emitting diode 214 for driving the light-emitting diode 214 to emit light.
  • the display screen substrate 210 also includes a gate driving circuit 212 and a gate driving circuit 213.
  • the gate driving circuit 212 and the gate driving circuit 213 are respectively connected to the pixel circuit 211. is connected to provide a gate control signal to the pixel circuit 211.
  • the above-mentioned circuit board 220 includes a display driver chip (display driver integrated circuit, DDIC) 221 and a power chip 222.
  • the display driving chip 221 is connected to the pixel circuit 211, the gate driving circuit 212 and the gate driving circuit 213 respectively.
  • the display driver chip 221 is used to provide power signals and pixel data to the pixel circuit 211 .
  • the display driving chip 221 is used to provide clock signals to the gate driving circuit 212 and the gate driving circuit 213 .
  • the gate driving circuit 212 and the gate driving circuit 213 may provide a gate control signal to the pixel circuit 211 based on the clock signal. The high and low levels of the gate control signal are controlled based on the clock signal.
  • the power chip 222 is connected to the pixel circuit 211, the gate driving circuit 212 and the gate driving circuit 213 respectively.
  • the power chip 222 can be used to provide required power signals for the pixel circuit 211, the gate driving circuit 212 and the gate driving circuit 213.
  • the above-mentioned circuit board 220 may be a flexible printed circuit board.
  • the above-mentioned display device 200 can be applied to various electronic devices.
  • the electronic device may include but is not limited to any electronic product based on an intelligent operating system, which can perform human-computer interaction with the user through input devices such as keyboards, virtual keyboards, touch pads, touch screens, and voice control devices.
  • input devices such as keyboards, virtual keyboards, touch pads, touch screens, and voice control devices.
  • smartphones tablet computers (tablet personal computer, Tablet PC), handheld computers, wearable electronic devices (such as VR glasses and smart watches, etc.), personal computers (personal computer, PC) and desktop computers.
  • Electronic devices may also include, but are not limited to, any kind of Internet of Things (IoT) devices.
  • IoT Internet of Things
  • FIG. 3 shows a schematic structural diagram of the corresponding display device, taking the electronic device as a smart watch as an example.
  • the display device of the smart watch shown in Figure 3 includes a display area and an outer edge area of the display area.
  • a plurality of pixel circuits are provided in the display area.
  • the plurality of pixel circuits may be arranged in rows, and the number of pixel circuits arranged in each row may be the same or different.
  • a pixel circuit is used to display one pixel.
  • a gate driving circuit may be provided in the outer edge area of the display area.
  • a display driver chip in the flexible printed circuit board is also disposed in the outer edge area of the display area.
  • the flexible printed circuit board can be bent to the backside of the outer edge area of the display area.
  • each pixel circuit can be controlled by multiple sets of gate driving circuits.
  • Each group of gate driving circuits may include a plurality of rows of gate driving circuits, and each row of gate driving circuits in the plurality of rows of gate driving circuits may provide one or more gate control signals.
  • the light-emitting control signal can be exemplified by referring to the gate control signal Emit of the transistor T2 in FIG. 4 below.
  • the gate scanning signals can be exemplified by the gate control signal scan1 of the transistor T4 and the gate control of the transistor T3 in Figure 4 below. signal scan2 and gate control signal scan3 of transistor T1. Moreover, there are one or more groups of gate driving circuits that can provide other gate control signals for the pixel circuit.
  • the other gate control signals can be exemplarily referred to the gate control signal G1 of the transistor T5 in FIG. 4 below. This is just an example.
  • the embodiment of the present application does not limit how many groups of driving circuits a pixel circuit is controlled by.
  • FIG. 2 and FIG. 3 is only an example of some components, and the specific implementation may also include other components, which are not limited by the embodiments of the present application.
  • the pixel circuit provided by the embodiment of the present application can be exemplified by reference to FIG. 4 .
  • the pixel circuit shown in Figure 4 includes 6 thin film transistors TFT, 2 capacitors and 1 OLED.
  • the thin film transistor TFT may include T1, T2, T3, T4, T5, and DT.
  • the transistors T1, T3, T4 and T5 are IGZO TFTs
  • the transistors T2 and DT are LTPS TFTs.
  • DT is a driving transistor, used to drive OLED to emit light.
  • Capacitors include C1 and C2.
  • the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 used to store the data voltage all use IGZO TFTs.
  • the transistor T3 connected to the OLED also uses IGZO TFT.
  • the leakage current of the pixel circuit is reduced as a whole, the voltage of the pixel circuit is kept stable, and the display effect of the OLED is optimized.
  • the specific connection relationship of the pixel circuit shown in FIG. 4 is different, such as the number of transistors and the connection position of the transistor T5 for inputting the data voltage V data .
  • the voltage compensation stage and the data writing stage of the pixel circuit can be controlled separately, so that the compensation time can be flexibly adjusted, the compensation result can be optimized, and the display effect can be optimized.
  • Each of the six transistors includes a first electrode, a second electrode and a gate electrode. If the first electrode of a transistor is the source, the second electrode of the transistor is the drain. Alternatively, if the first electrode of a transistor is the drain, the second electrode of the transistor is the source. Whether the first electrode of each transistor is the source or the drain is determined based on the actually implemented function. In the same way, whether the second electrode of each transistor is the source or the drain is also determined based on the actual implemented function. The description of the embodiments of the present application does not limit the specific electrode properties of the first electrode and the second electrode. In Figure 4, “1" represents the first electrode of the transistor, and “2" represents the second electrode of the transistor.
  • the first electrode of the transistor T1 and the first electrode of the transistor T5 are connected and intersected at the node N1
  • the second electrode of the transistor T1 and the first electrode of the transistor T2 are connected and intersected at the node N3 .
  • the gate of the transistor T1 is connected to the first gate drive circuit.
  • the symbol “(g)” represents the gate of the transistor
  • the symbol following “(g)” represents the control signal of the gate.
  • “(g)scan3" on the gate of the transistor T1 represents the gate of the transistor T1
  • “scan3" represents the control signal of the gate.
  • the first gate driving circuit may generate the gate control signal scan3.
  • the gate control signal scan3 controls the on and off of the transistor T1.
  • the first gate driving circuit may be the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
  • the second electrode of the transistor T2 may be connected to the power chip.
  • the power chip may input the power supply voltage VDD from the second electrode of the transistor T2 to the pixel circuit.
  • the power chip may be, for example, the power chip 222 in FIG. 2 .
  • the VDD may be a high-power power supply voltage PVDD.
  • the gate of the transistor T2 is connected to the second gate drive circuit.
  • the second gate driving circuit may generate the gate control signal Emit.
  • the gate control signal Emit controls the on and off of the transistor T2.
  • the second gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
  • the second electrode of the transistor T5 is connected to the display driver chip.
  • the display driving chip may input the voltage V data of the pixel data from the second electrode of the transistor T5 to the pixel circuit.
  • the display driver chip may be, for example, the display driver chip 221 in FIG. 2 .
  • the gate of the transistor T5 is connected to the fifth gate driving circuit.
  • the fifth gate driving circuit may generate the gate control signal G1.
  • the gate control signal G1 controls the on and off of the transistor T5.
  • the fifth gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
  • the first electrode of the transistor T5 and the first electrode of the transistor T1 are also connected to the first terminal of the capacitor C1 and intersect at the node N1.
  • “1” is used to indicate the first end of capacitor C1.
  • the second terminal of the capacitor C1 is connected to the second electrode of the transistor T2.
  • “2” is used to indicate the second end of capacitor C1.
  • the first electrode of the transistor T5, the first electrode of the transistor T1 and the first end of the capacitor C1 are also connected to the first end of the capacitor C2 and intersect at the node N1.
  • “1” represents the first end of capacitor C2.
  • the second terminal of capacitor C2 intersects the first electrode connection of transistor T4 at node N2.
  • “2” is used to indicate the second end of capacitor C2.
  • the second electrode of the transistor T4 is connected to the display driver chip.
  • the display driver chip may input the initialization control signal vinit2 from the second electrode of the transistor T4 to the pixel circuit.
  • the display driver chip may be, for example, the one shown in Figure 2 Display driver chip 221.
  • the initialization control signal vinit2 can be an input voltage.
  • the gate of the transistor T4 is connected to the fourth gate driving circuit.
  • the fourth gate driving circuit may generate the gate control signal scan1.
  • the gate control signal scan1 controls the on and off of the transistor T4.
  • the fourth gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
  • the first electrode of transistor T4 and the second end of capacitor C2 also intersect the gate connection of transistor DT at node N2.
  • the first electrode of the transistor DT is connected to the first electrode of the transistor T2 and is also connected to the second electrode of the transistor T1 and intersects at the node N3.
  • the second electrode of transistor DT intersects the first electrode of transistor T3 at node N4.
  • the first electrode of the transistor DT is the source of the transistor.
  • the second electrode of the transistor T3 is connected to the display driver chip.
  • the display driver chip may input the initialization control signal vinit1 from the second electrode of the transistor T3 to the pixel circuit.
  • the display driver chip may be, for example, the display driver chip 221 in FIG. 2 .
  • the initialization control signal vinit1 can be an input voltage.
  • the gate of the transistor T3 is connected to the third gate driving circuit.
  • the third gate driving circuit may generate the gate control signal scan2.
  • the gate control signal scan2 controls the on and off of the transistor T3.
  • the third gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
  • the second electrode of transistor DT and the first electrode of transistor T3 also intersect the anode connection of the OLED at node N4.
  • the cathode of the OLED is connected to the ground terminal voltage Vss.
  • the Vss may be the high-power ground terminal voltage PVss.
  • the initialization stage of the pixel circuit can restore the pixel circuit to its initial state and reduce the impact of the pixels of the previous frame of image on the pixel display of the next frame of image.
  • the voltage compensation stage compensates for voltage drops caused by transistor leakage and manufacturing process issues in the circuit.
  • the data writing stage is to save the pixel data in the form of voltage into the capacitor of the pixel circuit.
  • the light-emitting stage is the process of driving the OLED to emit light through driving current.
  • the control logic of the initialization stage and voltage compensation stage of the pixel circuit is the same.
  • the transistor T1 can be controlled to be turned on by the gate control signal scan3, the transistor T3 can be controlled to be turned on by the gate control signal scan2, the transistor T4 can be controlled to be turned on by the gate control signal scan1, and the transistors T2 and T5 can be controlled to be turned off. Therefore, the voltage at node N4 is initialized to vinit1, that is, the anode of the OLED is reset. So that the voltage at node N2 can be initialized to vinit2. At this time, there is a residual voltage at the node N3 when the pixel of the previous frame was displayed.
  • the residual voltage can be greater than the voltage vinit1, and a current can be generated in the transistor DT.
  • the voltage at node N3 slowly decreases, that is, the voltage at the source of transistor DT slowly decreases.
  • the voltage at the gate of transistor DT that is, the voltage at node N2 has been initialized to vinit2.
  • Vth is the threshold voltage of the transistor DT.
  • the voltage at node N3 is vinit2-V th . Since the transistor T1 is turned on, the voltage at the node N1 is equal to the voltage at the node N3. Then the voltage at node N1 is vinit2-V th .
  • the initialization phase and the voltage compensation phase of the above-mentioned pixel circuit can be performed simultaneously.
  • the initialization phase of the pixel circuit may be controlled first, and then the voltage compensation phase of the pixel circuit may be controlled and implemented.
  • the transistor T1 can be controlled to be turned on by the gate control signal scan3, the transistor T5 can be controlled to be turned on by the gate control signal G1, and the transistors T2, T3, T4 and DT can be turned off. Since the transistor T5 is turned on, the voltage V data of the pixel data starts to be input and charges the capacitor C2. When the charging is completed, the writing of V data is completed. Capacitor C1 can assist the writing of Vdata, so that the voltage at node N1 is equal to Vdata after the data is written. Due to the capacitive coupling effect of capacitor C1 and capacitor C2, the voltage difference between node N1 after data is written and before data is written is added to node N2.
  • the voltage of node N1 after data is written is Vdata, and the voltage before data is written is vinit2-V th .
  • the voltage at node N2 is vinit2.
  • the OLED can be driven to emit light.
  • the transistor T2 can be controlled to be turned on and the transistors T1, T3, T4 and T5 to be turned off through the gate control signal Emit. Since T2 is turned on, the driving current generated based on VDD flows to the transistor DT, and then the driving current is left to the OLED, driving the OLED to emit light.
  • Capacitor C2 can control the gate voltage of DT so that DT can conduct normally.
  • the size of the driving current can be expressed by the following formula:
  • represents the carrier mobility of the transistor DT
  • W is the width of the channel in the transistor DT
  • L is the length of the channel in the transistor DT
  • C ox is the gate oxide capacitance per unit area of the transistor DT
  • V gs is the transistor The voltage of DT's gate relative to its source.
  • the source voltage of transistor DT is the voltage at node N3. Since transistor T2 is turned on, the voltage at node N3 is equal to VDD.
  • the voltage at the gate of the transistor DT is the voltage at the node N2.
  • the driving current I ds has nothing to do with the voltage V th of the transistor DT, thus realizing compensation for the threshold voltage of the transistor DT.
  • the OLED after the OLED is driven to emit light, the OLED can also be adjusted through pulse width modulation (PWM) of the gate control signal of the transistor T2 and the gate control signal of the transistor T3. Luminous brightness.
  • PWM pulse width modulation
  • Figure 5 shows the timing diagram of the control signals of each transistor in the above-mentioned initialization stage, voltage compensation stage, data writing stage, light-emitting stage and dimming stage.
  • transistors T1, T3, T4 and T5 are all turned on when the gate control signal is at a high level, and turned off when the gate control signal is at a low level.
  • the transistor T2 is turned off when the gate control signal is at a high level and turned on when it is at a low level.
  • control gate control signals scan3, scan2 and scan1 are all at a high level, causing the transistors T1, T3 and T4 to all turn on.
  • the control gate control signal Emit is both at a high level, causing the transistor T2 to turn off.
  • the control gate control signals G1 are all at a low level, so that the transistors T1, T3 and T4 are all turned on.
  • control gate control signals scan3, scan2 and scan1 are all at a high level, causing the transistors T1, T3 and T4 to all turn on.
  • the control gate control signal Emit is both at a high level, causing the transistor T2 to turn off.
  • the control gate control signals G1 are all at a low level, so that the transistors T1, T3 and T4 are all turned on.
  • control gate control signals scan3 and G1 are both at a high level, causing the transistors T1 and T5 to both turn on.
  • the control gate control signals scan2 and scan1 are both at a low level, causing both transistors T3 and T4 to be turned on.
  • the control gate control signal Emit is both at a high level, causing the transistor T2 to turn off.
  • control gate control signal Emit is at a low level, causing the transistor T2 to be turned on.
  • the control gate control signals scan3, scan2, scan1 and G1 are all at a low level, causing the transistors T1, T3, T4 and T5 to all turn off.
  • the control gate control signals scan3, scan1 and G1 are all at low level, causing the transistors T1, T4 and T5 to all turn off. Then, first control Emit to be at a high level, so that transistor T2 is turned off; and, control scan2 at a high level, causing transistor T3 to turn on. Then, Emit is controlled to be at a low level, so that the transistor T2 is turned on; and scan2 is controlled to be at a low level, so that the transistor T3 is turned off. Then, Emit is controlled to be at a high level, so that the transistor T2 is turned off; and scan2 is controlled to be at a high level, so that the transistor T3 is turned on.
  • the OLED brightness is adjusted by continuously controlling the on and off of transistors T2 and T3.
  • timing diagram shown in FIG. 5 is only an example and does not constitute a limitation on the embodiments of the present application.
  • the embodiment of the present application does not limit whether the transistor is turned on at a high level or at a low level, and the above description is only an example.
  • the transistors T1, T4 and T5 in the leakage paths of capacitor C1 and capacitor C2 all use IGZO TFTs.
  • the on-current of IGZO TFT is not as large as that of LTPS TFT, the on-current of IGZO TFT is moderate and can meet the normal working requirements of the circuit.
  • the on-current of LTPS TFT is large, its leakage current is also large.
  • the transistors in the pixel circuit use LTPS TFTs with large leakage current. There is no problem when working in a high-frequency state. However, when working in a low-frequency state, due to the large leakage current of the LTPS TFT, the voltage of the circuit will slowly decrease.
  • the OLED emits different brightness at different times, causing the problem of flickering.
  • the leakage current of IGZO TFT is small. Under low-frequency operation, it can improve the problem of voltage drop in the circuit, thereby improving the problem of OLED display flicker. Therefore, in the pixel circuit shown in Figure 4 above, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 use IGZO TFT to achieve a low leakage current under low-frequency operation, so that the capacitor C1 The stored charge on capacitor C2 can be maintained efficiently, that is, the voltage in the circuit can be maintained, thereby improving the flicker problem of OLED under low-frequency operation.
  • the transistor T3 connected to the OLED also uses IGZO TFT, thereby reducing the leakage of the transistor T3.
  • the leakage current of the entire pixel circuit can be reduced as a whole, thereby improving the flicker problem of the OLED when the pixel circuit operates in a low-frequency state.
  • the pixel circuit shown in Figure 4 can also work in a high-frequency state and still maintain good working performance. That is to say, the pixel circuit shown in Figure 4 provided by the embodiment of the present application can work in both high-frequency and low-frequency states, and improves the flickering problem of OLED when working in low-frequency state, making the OLED display effect better. better.
  • the voltage compensation stage and the data writing stage are controlled separately. Therefore, the time of voltage compensation can be flexibly adjusted, for example, by adjusting the rising edge or falling edge of the gate control signal scan2 of the transistor T3, the gate control signal scan1 of the transistor T4, and the gate control signal G1 of the transistor T5 during the compensation phase. time to adjust the voltage compensation time.
  • the time of the rising edge or falling edge can be controlled by a clock signal provided by the display driver chip. That is, the pixel circuit shown in Figure 4 can improve the display effect of OLED by controlling the time of voltage compensation. For different display screens, the voltage compensation time can be adjusted accordingly to achieve a better display effect. The compensation time can be flexibly adjusted according to the process differences of the display screen, which increases the flexibility of pixel circuit application.
  • the pixel circuit provided by the embodiment of the present application can also be exemplified by reference to FIG. 6 .
  • the pixel circuit shown in FIG. 6 has an additional transistor T6 .
  • the transistor T6 may be an IGZO TFT.
  • the transistor T6 may be an LTPS TFT.
  • the second electrode of the transistor T1, the first electrode of the transistor T2 and the first electrode of the transistor DT are all connected to the first electrode of the transistor T6.
  • the second electrode of the transistor T6 is connected to the display driver chip.
  • the display driver chip may input the initialization control signal vinit3 from the second electrode of the transistor T6 to the pixel circuit.
  • the display driver chip may be, for example, the display driver chip 221 in FIG. 2 .
  • the initialization control signal vinit3 can be an input voltage.
  • the gate of the transistor T6 is connected to the sixth gate drive circuit.
  • the sixth gate driving circuit may generate the gate control signal G2. control signal via the gate G2 controls the on and off of transistor T6.
  • the sixth gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
  • the sixth gate driving circuit may be an existing gate driving circuit in the display device, without adding an additional set of gate driving circuits to control the transistor T6.
  • the gate driving circuits in the display device may be arranged in rows. Assume that the gate control signal G1 of the transistor T5 in Figure 6 is provided by the n-th row gate driving circuit of a certain group of gate driving circuits, and the gate control signal G2 of the transistor T6 can be provided by the certain group of gate driving circuits.
  • the gate drive circuit for the n-xth row of the drive circuit is provided.
  • the values of n and x may be integers greater than 1, and n is greater than x.
  • the gate drive circuit is disposed in the outer edge area of the display area of the display device, reusing the above-mentioned sixth gate drive circuit eliminates the need to add a new gate drive circuit, thereby reducing the area of the outer edge area of the display area. Displays the width of the screen.
  • the newly added transistor T6 in the pixel circuit shown in Figure 6 is used to initialize the voltage at the node N3.
  • the gate control signal scan3 can be used to control the transistor T1 to be turned on
  • the gate control signal scan2 can be used to control the transistor T3 to be turned on
  • the gate control signal scan1 can be used to control the transistor T4 to be turned on
  • the gate control signal G2 can be used to control the transistor T6 is turned on
  • transistors T2 and T5 are turned off.
  • the voltage at node N4 is initialized to vinit1, that is, the anode of the OLED is reset.
  • the voltage at node N2 can be initialized to vinit2, and the voltage at node N3 can be initialized to vinit3. Since the transistor T1 is turned on, the voltage at the node N1 is equal to the voltage at the node N3. After the initialization is completed, the transistor T6 is turned off, causing the voltage compensation phase to be entered. The sixth transistor is in an off state during both the data writing phase and the light emitting phase after the voltage compensation phase of the pixel circuit.
  • the voltage vinit3 of the node N3 can be set to be greater than the voltage vinit1, and a current can be generated in the transistor DT.
  • the voltage at node N3 slowly decreases, that is, the voltage at the source of transistor DT slowly decreases.
  • the voltage at the gate of transistor DT that is, the voltage at node N2
  • Vth is the threshold voltage of the transistor DT.
  • the voltage at node N3 is vinit2-V th . Since the transistor T1 is turned on, the voltage at the node N1 is equal to the voltage at the node N3. Then the voltage at node N1 is vinit2-V th .
  • the pixel circuit shown in Figure 6 After the pixel circuit shown in Figure 6 completes the above-mentioned initialization and voltage compensation, it enters the data writing and lighting stages.
  • the control logic and implementation of the two stages please refer to the corresponding description of the pixel circuit shown in Figure 4 above, which will not be discussed here. Repeat.
  • the OLED after the OLED is driven to emit light, the OLED can also be adjusted through pulse width modulation (PWM) of the gate control signal of the transistor T2 and the gate control signal of the transistor T3. Luminous brightness.
  • PWM pulse width modulation
  • FIG. 7 a timing diagram of the control signals of each transistor in the initialization phase, voltage compensation phase, data writing phase, light emitting phase, and dimming phase in the pixel circuit shown in FIG. 6 is shown.
  • the timing diagram shown in FIG. 7 adds the timing of the gate control signal G2 of the transistor T6 .
  • the gate control signal G2 is at a high level only during the initialization stage, causing the transistor T6 to be turned on to complete the initialization at the node N3. After the initialization is completed, the gate control signal G2 is always at a low level, causing the transistor T6 to turn off.
  • the pixel circuit shown in Figure 6 above has a new transistor T6 compared to the pixel circuit shown in Figure 4 above. It can be used to initialize the voltage at node N3 during the initialization phase, reducing the residual charge of the previous frame signal at node N3.
  • the effect of the voltage compensation stage is optimized, which further improves the problem of OLED display flicker and optimizes the OLED display effect.
  • the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 All use IGZO TFT.
  • the on-current of IGZO TFT is not as large as that of LTPS TFT, the on-current of IGZO TFT is moderate and can meet the normal working requirements of the circuit.
  • the on-current of LTPS TFT is large, its leakage current is also large.
  • the transistors in the pixel circuit use LTPS TFTs with large leakage current. There is no problem when working in a high-frequency state. However, when working in a low-frequency state, due to the large leakage current of the LTPS TFT, the voltage of the circuit will slowly decrease.
  • the OLED emits different brightness at different times, causing the problem of flickering.
  • the leakage current of IGZO TFT is small. Under low-frequency operation, it can improve the problem of voltage drop in the circuit, thereby improving the problem of OLED display flicker. Therefore, in the pixel circuit shown in Figure 6 above, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 use IGZO TFT to achieve low leakage current under low-frequency operation, so that the capacitor C1 The stored charge on capacitor C2 can be maintained efficiently, that is, the voltage in the circuit can be maintained, thereby improving the flicker problem of OLED under low-frequency operation.
  • the transistor T3 connected to the OLED also uses IGZO TFT, thereby reducing the leakage of the transistor T3.
  • the leakage current of the entire pixel circuit can be reduced as a whole, thereby improving the flicker problem of the OLED when the pixel circuit operates in a low-frequency state.
  • the pixel circuit shown in Figure 6 can also work in a high-frequency state and still maintain good working performance. That is to say, the pixel circuit shown in Figure 6 provided by the embodiment of the present application can work in both a high-frequency state and a low-frequency state, and improves the flicker problem of OLED when operating in a low-frequency state, making the OLED display effect better. better.
  • the voltage compensation stage and the data writing stage are controlled separately. Therefore, the time of voltage compensation can be flexibly adjusted, for example, by adjusting the rising or falling edges of the gate control signal scan2 of the transistor T3, the gate control signal scan1 of the transistor T4, and the gate control signal G1 of the transistor T5 during the compensation phase. time to adjust the voltage compensation time.
  • the time of the rising edge or falling edge can be controlled by a clock signal provided by the display driver chip. That is, the pixel circuit shown in Figure 6 can improve the display effect of OLED by controlling the time of voltage compensation. For different display screens, the voltage compensation time can be adjusted accordingly to achieve a better display effect. The compensation time can be flexibly adjusted according to the process differences of the display screen, which increases the flexibility of pixel circuit application.
  • the pixel circuit provided by the embodiment of the present application can also be exemplified by reference to FIG. 8 .
  • the pixel circuit shown in FIG. 8 adds a capacitor C3.
  • the first electrode of the transistor T1, the first electrode of the transistor T5, the first terminal of the capacitor C1 and the first terminal of the capacitor C2 are all connected to the first terminal of the capacitor C3.
  • the second electrode of the transistor T1, the first electrode of the transistor T2, the first electrode of the transistor T6, and the first electrode of the transistor DT are all connected to the second end of the capacitor C3.
  • “1” is used to indicate the first end of the capacitor C3
  • “2” is used to indicate the second end of the capacitor C3.
  • control logic and specific implementation of the initialization stage, voltage compensation stage, data writing stage, light emitting stage and dimming stage in the pixel circuit shown in Figure 8 can be found in the corresponding description of the pixel circuit shown in Figure 6 above. No further details will be given here.
  • the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 may be from the same gate drive circuit. road control signal.
  • scan the same control signal.
  • the gate drive circuit is arranged in the outer edge area of the display area of the display device, reusing the gate drive circuit can reduce the number of drive circuits, thereby reducing the area of the outer edge area of the display area, thereby reducing the width of the display screen.
  • the above-mentioned transistor T1 and transistor T4 are both turned on at a high level and turned off at a low level.
  • the transistor T1 and the transistor T4 are both turned on at a low level and turned off at a high level. Since the body tube T1 The gate control signal scan3 and the gate control signal scan1 of the transistor T4 are the same control signal, and the transistor T1 and the transistor T4 are turned on or off at the same time.
  • the transistor T5 can be turned on, and the other transistors can be turned off, that is, the transistor T1 is turned off together with the transistor T4.
  • the above-mentioned transistor T1 is turned on at a high level and turned off at a low level; and the transistor T4 is turned on at a low level and turned off at a high level.
  • the transistor T1 is turned on at a low level and turned off at a high level; while the transistor T4 is turned on at a high level and turned off at a low level. Since the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 are the same control signal, one of the transistor T1 and the transistor T4 is in an on state and the other is in an off state at the same time.
  • the transistor T1 can be controlled to be in the on state, while the transistor T4 can be controlled to be in the off state. Then the control transistor T5 is turned on, and the remaining transistors are turned off, thereby completing the writing of data.
  • the newly added capacitor C3 can utilize the voltage difference of the capacitor C3 to maintain the voltage at the node N3 during the light emitting stage.
  • the change in the gate voltage of the transistor DT relative to the source voltage decreases, that is, Vgs decreases.
  • the capacitor C3 can stabilize the voltage, keep Vgs stable and reduce the fluctuation of Vgs, which is equivalent to the effect of voltage compensation, making the voltage compensation effect of the entire pixel circuit more significant. That is, compared with the pixel circuit shown in FIG. 6 mentioned above, the voltage compensation effect of the pixel circuit shown in FIG. 8 is better.
  • FIG. 10 For ease of understanding, reference may be made to FIG. 10 as an example.
  • FIG. 10 exemplarily shows a schematic diagram of the simulation results of the voltage compensation effect of the pixel circuit shown in FIG. 6 and FIG. 8 .
  • FIG. 10 (a) shows a schematic diagram of the simulation results of the pixel circuit shown in FIG. 6
  • the vertical axis represents the voltage compensation effect
  • the horizontal axis represents the data voltage V data .
  • “Typ” in the icon in Figure 10 represents the typical threshold voltage V th of the driving TFT, that is, the above-mentioned transistor DT. It can be seen that the compensation effect of the typical voltage is 100%. Take the "Typ-0.5" in the icon in Figure 10 as an example.
  • the "Typ-0.5" in the icon in Figure 10 indicates that the V th voltage driving the TFT is 0.5V smaller than the typical value.
  • the characteristics of the driving TFT will fluctuate due to the influence of the manufacturing process, which will cause the V th voltage to change, that is, deviate from the typical threshold voltage.
  • the compensation effect will deviate from the ideal 100% compensation effect to a certain extent. If the compensation effect deviates from 100%, the display effect will be affected.
  • the pixel circuit shown in Figure 8 above uses capacitor C3 to reduce V gs and is affected by the coupling of parasitic capacitance, which can alleviate the impact of V th voltage changes caused by the manufacturing process to a certain extent. Therefore, from the perspective of compensation effect, the deviation amplitude of the compensation effect of the pixel circuit shown in Figure 8 is smaller than that of the pixel circuit shown in Figure 6, indicating that the compensation effect has been further improved.
  • the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 all use IGZO TFTs.
  • the on-current of IGZO TFT is not as large as that of LTPS TFT, the on-current of IGZO TFT is moderate and can meet the normal working requirements of the circuit.
  • the on-current of LTPS TFT is large, its leakage current is also large.
  • the transistors in the pixel circuit use LTPS TFTs with large leakage current. There is no problem when working in a high-frequency state. However, when working in a low-frequency state, due to the large leakage current of the LTPS TFT, the voltage of the circuit will slowly decrease.
  • the OLED emits different brightness at different times, causing the problem of flickering.
  • the leakage current of IGZO TFT is small. Under low-frequency operation, it can improve the problem of voltage drop in the circuit, thereby improving the problem of OLED display flicker. Therefore, in the above-mentioned pixel circuit shown in Figure 8, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 Using IGZO TFT, low leakage current can be maintained under low-frequency operation, so that the stored charge on capacitor C1 and capacitor C2 can be efficiently maintained, that is, the voltage in the circuit can be maintained, thereby improving the flicker problem of OLED under low-frequency operation. .
  • the transistor T3 connected to the OLED also uses IGZO TFT, thereby reducing the leakage of the transistor T3.
  • the leakage current of the entire pixel circuit can be reduced as a whole, thereby improving the flicker problem of the OLED when the pixel circuit operates in a low-frequency state.
  • the pixel circuit shown in Figure 8 can also operate in a high-frequency state and still maintain good operating performance. That is to say, the pixel circuit shown in Figure 8 provided by the embodiment of the present application can work in both a high-frequency state and a low-frequency state, and improves the flickering problem of OLED when operating in a low-frequency state, making the OLED display effect better. better.
  • the voltage compensation stage and the data writing stage are controlled separately. Therefore, the time of voltage compensation can be flexibly adjusted, for example, by adjusting the rising edge or falling edge of the gate control signal scan2 of the transistor T3, the gate control signal scan1 of the transistor T4, and the gate control signal G1 of the transistor T5 during the compensation phase. time to adjust the voltage compensation time.
  • the time of the rising edge or falling edge can be controlled by a clock signal provided by the display driver chip. That is, the pixel circuit shown in Figure 8 can improve the display effect of OLED by controlling the time of voltage compensation. For different display screens, the voltage compensation time can be adjusted accordingly to achieve a better display effect. The compensation time can be flexibly adjusted according to the process differences of the display screen, which increases the flexibility of pixel circuit application.
  • the pixel circuit provided by the embodiment of the present application can also be exemplified by reference to FIG. 11 .
  • the pixel circuit shown in FIG. 11 is configured such that the gate electrode of the transistor T1 and the gate electrode of the transistor T4 are connected to the same signal output terminal of the same group of gate control circuits. That is, the gate control signal of the transistor T1 and the gate control signal of the transistor T4 are the same gate control signal, and the same gate control signal can be represented by scan4.
  • the turn-on and turn-off of the transistor T6 can be controlled by the gate scanning signal scan5 .
  • the gate scanning signal scan5 may be provided by an existing gate drive circuit, that is, the gate scanning signal scan5 may be the same gate as the gate control signal of another transistor (not shown in Figure 11). control signal.
  • the above arrangement is because the gate drive circuit is arranged in the outer edge area of the display area of the display device. Reusing the gate drive circuit can reduce the number of drive circuits, thereby reducing the area of the outer edge area of the display area, thereby reducing the width of the display screen. .
  • the gate control signal G1 of the transistor T5 and the gate control signal G2 of the transistor T6 may be driven by the same group of gate driving circuits (referred to as the first gate driving circuit for short). set gate drive circuit) to provide.
  • the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 may be provided by the same group of gate driving circuits (referred to as the second group of gate driving circuits for short).
  • the gate control signal scan3 and the gate control signal scan1 may be the same control signal of the second group of gate driving circuits.
  • the gate control signal scan2 of the transistor T3 may be provided by a third group of gate driving circuits.
  • the gate control signal Emit of the transistor T2 can be determined by the Four sets of gate drive circuits are provided.
  • the first group of gate driving circuits, the second group of gate driving circuits, the third group of gate driving circuits and the fourth group of gate driving circuits may be different from each other.
  • the gate control signal G1 of the transistor T5 and the gate control signal G2 of the transistor T6 can be generated by the above-mentioned first group of gates.
  • driver circuit is provided.
  • the gate control signal G1 and the gate control signal G2 are provided by gate drive circuits in different rows of the first group of gate drive circuits.
  • the gate control signal G1 of the transistor T5 is provided by the n-th row gate driving circuit of the first group of gate driving circuits
  • the gate control signal G2 of the transistor T6 may be provided by the certain group of gate driving circuits.
  • the gate drive circuit of the n-xth row is provided by the gate drive circuit.
  • the gate control signal scan3 of the transistor T1 may be provided by the above-mentioned second group of gate driving circuits.
  • the gate control signal scan2 of the transistor T3 may be provided by the above-mentioned third group of gate driving circuits.
  • the gate control signal Emit of the transistor T2 may be provided by the above-mentioned fourth group of gate driving circuits.
  • the gate control signal scan1 of the transistor T4 may be provided by the fifth group of gate driving circuits.
  • the first group of gate driving circuits, the second group of gate driving circuits, the third group of gate driving circuits, the fourth group of gate driving circuits and the fifth group of gate driving circuits may be different from each other.
  • the gate control signal G1 of the transistor T5 may be provided by the above-mentioned first group of gate driving circuits.
  • the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 may be provided by the above-mentioned second group of gate driving circuits.
  • the gate control signal scan3 and the gate control signal scan1 may be the same control signal of the second group of gate driving circuits.
  • the gate control signal scan2 of the transistor T3 may be provided by the above-mentioned third group of gate driving circuits.
  • the gate control signal Emit of the transistor T2 may be provided by the above-mentioned fourth group of gate driving circuits.
  • the gate control signal G2 of the transistor T6 may be provided by the fifth group of gate driving circuits mentioned above.
  • the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 can be provided by the second group of gate drive circuits.
  • the gate control signal scan3 and the gate control signal scan1 may be the same control signal of the second group of gate driving circuits.
  • the gate control signals of the two transistors are provided by a set of gate drive circuits, which can reduce the number of gate drive circuits, thereby reducing the area of the outer edge area of the display area and reducing the width of the display screen.
  • each transistor may be controlled by an independent gate drive circuit, which is not limited in the embodiments of the present application.
  • first, second, etc. are used to distinguish the same or similar items with basically the same functions and functions. It should be understood that the terms “first”, “second” and “nth” There is no logical or sequential dependency, and there is no limit on the number or execution order. It should also be understood that, although the following description uses the terms first, second, etc. to describe various elements, these elements should not be limited by the terms. These terms are only used to distinguish one element from another.
  • the size of the sequence number of each process does not mean the order of execution.
  • the execution order of each process should be determined by its function and internal logic, and should not be determined by the execution order of the embodiments of the present application.
  • the implementation process constitutes no limitation.
  • references throughout the specification to “one embodiment,” “an embodiment,” and “some implementations of the embodiments of this application” mean specific features, structures, or characteristics related to the embodiments or implementations. Include in this application at least one in an embodiment. Therefore, “in one embodiment” or “in an embodiment” and “in some implementations of the embodiments of the present application” appearing in various places throughout this specification do not necessarily refer to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments.

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Abstract

Disclosed are a pixel circuit and a display screen. The pixel circuit comprises a first transistor (T1), a second transistor (T2), a third transistor (T3), a fourth transistor (T4), a fifth transistor (T5), a driving transistor (DT), a first capacitor (C1), a second capacitor (C2), and a light emitting diode (OLED). The first transistor (T1), the third transistor (T3), the fourth transistor (T4), and the fifth transistor (T5) are indium-gallium-zinc oxide thin film transistors. The second transistor (T2) and the driving transistor (DT) are low-temperature polycrystalline silicon thin film transistors. The present application can be suitable for working in a low-frequency state to reduce power consumption, and a light-emitting state of the organic light-emitting diode (OLED) is not affected.

Description

像素电路及显示屏Pixel circuit and display screen
本申请要求于2022年03月30日提交中国专利局、申请号为202210327265.7、申请名称为“像素电路及显示屏”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims priority to the Chinese patent application filed with the China Patent Office on March 30, 2022, with the application number 202210327265.7 and the application name "pixel circuit and display screen", the entire content of which is incorporated into this application by reference.
技术领域Technical field
本发明涉及显示技术领域,尤其涉及一种像素电路及显示屏。The present invention relates to the field of display technology, and in particular to a pixel circuit and a display screen.
背景技术Background technique
利用有机发光二极管(organic light-emitting diode,OLED)制成的OLED显示屏不需背光源,并且具备对比度高、厚度薄、视角广、反应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异的特性,使得其可以广泛应用于各类显示设备中。OLED displays made of organic light-emitting diodes (OLED) do not require a backlight, and have high contrast, thin thickness, wide viewing angle, fast response speed, can be used in flexible panels, and a wide operating temperature range Its excellent characteristics such as simple structure and simple manufacturing process make it widely used in various display devices.
OLED显示屏中的有机发光二极管由像素电路来驱动发光。但是,现有像素电路中使用的晶体管通常是低温多晶硅(low temperature polycrystalline silicon,LTPS)薄膜晶体管(thin film transistor,TFT)。LTPS TFT的导通电流高,适合高频状态下工作。但是高频工作状态的功耗较大,难以满足产品在低频状态下工作以实现低功耗的需求。因此,如何设计可以适用于低频状态下工作,且不影响有机发光二极管的发光状态的像素电路是本领域技术人员急需解决的技术问题。The organic light-emitting diodes in the OLED display are driven by pixel circuits to emit light. However, the transistors used in existing pixel circuits are usually low temperature polycrystalline silicon (LTPS) thin film transistors (TFT). LTPS TFT has high on-current and is suitable for working under high frequency conditions. However, the power consumption in the high-frequency working state is relatively large, and it is difficult to meet the demand for products to work in the low-frequency state to achieve low power consumption. Therefore, how to design a pixel circuit that can be adapted to operate in a low-frequency state without affecting the light-emitting state of the organic light-emitting diode is an urgent technical problem that those skilled in the art need to solve.
发明内容Contents of the invention
本申请实施例公开了一种像素电路及显示屏,能够可以适用于低频状态下工作以降低功耗,且不影响有机发光二极管的发光状态。The embodiment of the present application discloses a pixel circuit and a display screen, which can be adapted to work in a low-frequency state to reduce power consumption without affecting the light-emitting state of the organic light-emitting diode.
第一方面,本申请实施例提供一种像素电路,所述像素电路包括第一晶体管、第二晶体管、第三晶体管、第四晶体管、第五晶体管、驱动晶体管、第一电容、第二电容和发光二极管;所述第一晶体管、第三晶体管、第四晶体管和第五晶体管为铟镓锌氧化物薄膜晶体管,所述第二晶体管和驱动晶体管为低温多晶硅薄膜晶体管;In a first aspect, embodiments of the present application provide a pixel circuit, which includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a driving transistor, a first capacitor, a second capacitor, and a Light emitting diode; the first transistor, the third transistor, the fourth transistor and the fifth transistor are indium gallium zinc oxide thin film transistors, and the second transistor and the driving transistor are low temperature polysilicon thin film transistors;
所述第一晶体管的第一电极、所述第五晶体管的第一电极、所述第一电容的第一端和所述第二电容的第一端电连接相交于第一节点;The first electrode of the first transistor, the first electrode of the fifth transistor, the first end of the first capacitor and the first end of the second capacitor are electrically connected and intersect at the first node;
所述第二电容的第二端、所述第四晶体管的第一电极和所述驱动晶体管的栅极电连接相交于第二节点;The second end of the second capacitor, the first electrode of the fourth transistor and the gate of the drive transistor are electrically connected to intersect at the second node;
所述第一晶体管的第二电极、所述驱动晶体管的第一电极和所述第二晶体管的第一电极电连接相交于第三节点;The second electrode of the first transistor, the first electrode of the driving transistor and the first electrode of the second transistor are electrically connected and intersect at a third node;
所述驱动晶体管的第二电极、所述第三晶体管的第一电极和所述发光二极管的阳极电连接相交于第四节点,所述发光二极管的阴极接地;The second electrode of the driving transistor, the first electrode of the third transistor and the anode of the light-emitting diode are electrically connected to intersect at a fourth node, and the cathode of the light-emitting diode is grounded;
所述第一电容的第二端和所述第二晶体管的第二电极连接,所述第二晶体管的第二电极用于输入电源电压;The second end of the first capacitor is connected to the second electrode of the second transistor, and the second electrode of the second transistor is used to input the power supply voltage;
所述第一晶体管、第二晶体管、第三晶体管、第四晶体管和第五晶体管的栅极分别用于输入栅极控制信号;The gates of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor are respectively used to input gate control signals;
所述第五晶体管的第二电极用于输入数据电压,所述第三晶体管的第二电极用于输入第一初始化控制信号,所述第四晶体管的第二电极用于输入第二初始化控制信号。The second electrode of the fifth transistor is used to input a data voltage, the second electrode of the third transistor is used to input a first initialization control signal, and the second electrode of the fourth transistor is used to input a second initialization control signal. .
一种可能的实施方式中,在所述像素电路的初始化阶段和电压补偿阶段,所述第一晶体 管、所述第三晶体管和所述第四晶体管导通,所述第二晶体管和所述第五晶体管关断;所述第四节点的电压初始化为所述第一初始化控制信号,所述第二节点的电压初始化为所述第二初始化控制信号,所述第三节点和所述第一节点的电压均为所述第二初始化控制信号与所述驱动晶体管的阈值电压的差值。In a possible implementation, during the initialization phase and voltage compensation phase of the pixel circuit, the first crystal tube, the third transistor and the fourth transistor are turned on, the second transistor and the fifth transistor are turned off; the voltage of the fourth node is initialized to the first initialization control signal, and the third transistor is turned off. The voltages of the two nodes are initialized to the second initialization control signal, and the voltages of the third node and the first node are both the difference between the second initialization control signal and the threshold voltage of the driving transistor.
一种可能的实施方式中,在所述像素电路的数据写入阶段,所述第一晶体管和所述第五晶体管导通,所述第二晶体管、所述第三晶体管和所述第四晶体管关断;所述第一节点的电压为所述数据电压,所述第二节点的电压为所述数据电压与所述驱动晶体管的阈值电压的和。In a possible implementation, during the data writing phase of the pixel circuit, the first transistor and the fifth transistor are turned on, and the second transistor, the third transistor and the fourth transistor are Turn off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
一种可能的实施方式中,在所述像素电路的发光阶段,所述第二晶体管导通,所述第一晶体管、所述第三晶体管、所述第四晶体管和所述第五晶体管关断;基于所述第二晶体管的第二电极输入的所述电源电压产生的驱动电流驱动所述发光二极管发光。In a possible implementation, during the light-emitting phase of the pixel circuit, the second transistor is turned on, and the first transistor, the third transistor, the fourth transistor and the fifth transistor are turned off. ; The driving current generated based on the power supply voltage input by the second electrode of the second transistor drives the light-emitting diode to emit light.
本申请实施例提供的像素电路中第一电容和用于存储数据电压的第二电容的漏电通路中的第一晶体管、第四晶体管和第五晶体管都使用的是铟镓锌氧化物薄膜晶体管,与发光二极管连接的第三晶体管也采用的是铟镓锌氧化物薄膜晶体管。从而整体上减少了像素电路的漏电流,保持像素电路的电压稳定,优化发光二极管的显示效果。由于本申请实施例提供的像素电路特有的连接关系,可以分开控制所述像素电路的电压补偿阶段和数据写入阶段,进而可以灵活调节补偿时间,优化补偿结果,进而优化显示效果。In the pixel circuit provided by the embodiment of the present application, the first transistor, the fourth transistor and the fifth transistor in the leakage path of the first capacitor and the second capacitor used to store data voltage all use indium gallium zinc oxide thin film transistors. The third transistor connected to the light-emitting diode also uses an indium gallium zinc oxide thin film transistor. This reduces the leakage current of the pixel circuit as a whole, keeps the voltage of the pixel circuit stable, and optimizes the display effect of the light-emitting diode. Due to the unique connection relationship of the pixel circuit provided by the embodiments of the present application, the voltage compensation stage and the data writing stage of the pixel circuit can be controlled separately, so that the compensation time can be flexibly adjusted, the compensation result can be optimized, and the display effect can be optimized.
一种可能的实施方式中,所述像素电路还包括第六晶体管,所述第六晶体管的第一电极电连接到所述第三节点,所述第六晶体管的第二电极用于输入第三初始化控制信号。In a possible implementation, the pixel circuit further includes a sixth transistor, a first electrode of the sixth transistor is electrically connected to the third node, and a second electrode of the sixth transistor is used to input a third Initialize control signals.
可选的,所述第六晶体管为铟镓锌氧化物薄膜晶体管;或者,所述第六晶体管为低温多晶硅薄膜晶体管。Optionally, the sixth transistor is an indium gallium zinc oxide thin film transistor; or, the sixth transistor is a low temperature polysilicon thin film transistor.
本申请实施例提供的像素电路中,所述第六晶体管可以用于在初始化阶段实现第三节点处的电压初始化,减少了前一帧信号在第三节点处的残留电荷对电压补偿阶段的影响,优化了电压补偿的效果,进一步改善了发光二极管显示闪烁的问题,优化了发光二极管的显示效果。In the pixel circuit provided by the embodiment of the present application, the sixth transistor can be used to initialize the voltage at the third node in the initialization phase, reducing the impact of the residual charge of the previous frame signal at the third node on the voltage compensation phase. , optimizes the effect of voltage compensation, further improves the problem of LED display flicker, and optimizes the display effect of LEDs.
一种可能的实施方式中,所述像素电路还包括第三电容,所述第三电容的第一端电连接到所述第一节点,所述第三电容的第二端电连接到所述第三节点。In a possible implementation, the pixel circuit further includes a third capacitor, a first terminal of the third capacitor is electrically connected to the first node, and a second terminal of the third capacitor is electrically connected to the The third node.
本申请实施例提供的像素电路中,可以在发光阶段利用所述第三电容的电压差来保持第三节点处的电压。在发光阶段,当所述第二晶体管导通后,所述驱动晶体管的栅极电压相对于源极电压的变化减小,即Vgs减小。而所述第三电容能起到稳压作用,使得Vgs保持稳定,减少Vgs的变化波动,相当于起到了电压补偿的效果,使得整个像素电路电压补偿的效果更显著。In the pixel circuit provided by the embodiment of the present application, the voltage difference of the third capacitor can be used to maintain the voltage at the third node during the light emitting stage. In the light-emitting phase, when the second transistor is turned on, the change in gate voltage of the driving transistor relative to the source voltage decreases, that is, Vgs decreases. The third capacitor can stabilize the voltage, keep Vgs stable and reduce the fluctuation of Vgs, which is equivalent to the effect of voltage compensation, making the voltage compensation effect of the entire pixel circuit more significant.
一种可能的实施方式中,所述第五晶体管的栅极控制信号和所述第六晶体管的栅极控制信号为来自同一组栅极驱动电路中不同行的栅极驱动电路的控制信号。In a possible implementation, the gate control signal of the fifth transistor and the gate control signal of the sixth transistor are control signals from different rows of gate drive circuits in the same group of gate drive circuits.
本申请实施例提供的像素电路中,由于栅极驱动电路设置在显示装置的显示区外边缘区域,重复利用一组栅极驱动电路可以减少驱动电路的数量,从而可以减少显示区外边缘区域的面积,以减少显示屏幕的宽度。In the pixel circuit provided by the embodiment of the present application, since the gate drive circuit is arranged in the outer edge area of the display area of the display device, reusing a group of gate drive circuits can reduce the number of drive circuits, thereby reducing the number of drive circuits in the outer edge area of the display area. area to reduce the width of the display screen.
一种可能的实施方式中,在所述像素电路的初始化阶段,所述第六晶体管、所述第一晶体管、所述第三晶体管和所述第四晶体管导通,所述第二晶体管和所述第五晶体管关断;所述第四节点的电压初始化为所述第一初始化控制信号,所述第二节点的电压初始化为所述第二初始化控制信号,所述第三节点的电压初始化为所述第三初始化控制信号;In a possible implementation, during the initialization phase of the pixel circuit, the sixth transistor, the first transistor, the third transistor and the fourth transistor are turned on, and the second transistor and the The fifth transistor is turned off; the voltage of the fourth node is initialized to the first initialization control signal, the voltage of the second node is initialized to the second initialization control signal, and the voltage of the third node is initialized to The third initialization control signal;
在所述像素电路的电压补偿阶段,所述第六晶体管关断,其余的晶体管的状态保持所述 初始化阶段的状态,所述第三节点和所述第一节点的电压均为所述第二初始化控制信号与所述驱动晶体管的阈值电压的差值。During the voltage compensation phase of the pixel circuit, the sixth transistor is turned off, and the states of the remaining transistors remain as described. In the state of the initialization phase, the voltages of the third node and the first node are both the difference between the second initialization control signal and the threshold voltage of the driving transistor.
一种可能的实施方式中,在所述像素电路的数据写入阶段,所述第一晶体管和所述第五晶体管导通,所述第二晶体管、所述第三晶体管、所述第四晶体管和所述第六晶体管关断;所述第一节点的电压为所述数据电压,所述第二节点的电压为所述数据电压与所述驱动晶体管的阈值电压的和。In a possible implementation, during the data writing phase of the pixel circuit, the first transistor and the fifth transistor are turned on, and the second transistor, the third transistor, and the fourth transistor are and the sixth transistor is turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
一种可能的实施方式中,所述第一晶体管和所述第四晶体管的栅极控制信号为同一路信号。在这种实施方式中,在所述像素电路的数据写入阶段,所述第五晶体管导通,所述第一晶体管、所述第二晶体管、所述第三晶体管、所述第四晶体管和所述第六晶体管关断;所述第一节点的电压为所述数据电压,所述第二节点的电压为所述数据电压与所述驱动晶体管的阈值电压的和。In a possible implementation, the gate control signals of the first transistor and the fourth transistor are the same signal. In this implementation, during the data writing phase of the pixel circuit, the fifth transistor is turned on, and the first transistor, the second transistor, the third transistor, the fourth transistor and The sixth transistor is turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
本申请实施例提供的像素电路中,由于栅极驱动电路设置在显示装置的显示区外边缘区域,重复利用同一路栅极驱动信号可以减少驱动电路的数量,从而可以减少显示区外边缘区域的面积,以减少显示屏幕的宽度。In the pixel circuit provided by the embodiment of the present application, since the gate drive circuit is arranged in the outer edge area of the display area of the display device, reusing the same gate drive signal can reduce the number of drive circuits, thereby reducing the number of drive circuits in the outer edge area of the display area. area to reduce the width of the display screen.
一种可能的实施方式中,在所述像素电路的发光阶段,所述第二晶体管导通,所述第一晶体管、所述第三晶体管、所述第四晶体管、所述第五晶体管和所述第六晶体管关断;基于所述第二晶体管的第二电极输入的所述电源电压产生的驱动电流驱动所述发光二极管发光。In a possible implementation, during the light-emitting phase of the pixel circuit, the second transistor is turned on, and the first transistor, the third transistor, the fourth transistor, the fifth transistor and the The sixth transistor is turned off; the driving current generated based on the power supply voltage input by the second electrode of the second transistor drives the light-emitting diode to emit light.
一种可能的实施方式中,在所述像素电路的调光阶段,通过对所述第二晶体管和所述第三晶体管的栅极控制信号进行脉冲宽度调制来调节所述发光二极管的发光亮度。In a possible implementation, during the dimming stage of the pixel circuit, the luminous brightness of the light-emitting diode is adjusted by performing pulse width modulation on the gate control signals of the second transistor and the third transistor.
本申请实施例提供的像素电路中,可以通过对所述第二晶体管和所述第三晶体管的栅极控制信号进行脉冲宽度调制实现对发光二极管的亮度的调节。In the pixel circuit provided by the embodiment of the present application, the brightness of the light-emitting diode can be adjusted by performing pulse width modulation on the gate control signals of the second transistor and the third transistor.
基于上述的实现可知,本申请实施例提供的像素电路可以分开控制所述像素电路的电压补偿阶段和数据写入阶段,进而可以灵活调节补偿时间,优化补偿结果,进而优化显示效果。Based on the above implementation, it can be seen that the pixel circuit provided by the embodiment of the present application can separately control the voltage compensation stage and the data writing stage of the pixel circuit, thereby flexibly adjusting the compensation time, optimizing the compensation results, and further optimizing the display effect.
第二方面,本申请实施例提供一种显示屏,所述显示屏包括像素电路、栅极驱动电路、显示驱动芯片和电源芯片;所述栅极驱动电路用于为所述像素电路提供栅极控制信号,所述显示驱动芯片用于为所述像素电路提供初始化控制信号和数据电压,所述电源芯片用于为所述像素电路提供电源信号;所述像素电路为上述第一方面任一项所述的像素电路。In a second aspect, embodiments of the present application provide a display screen. The display screen includes a pixel circuit, a gate drive circuit, a display drive chip and a power supply chip; the gate drive circuit is used to provide a gate for the pixel circuit. Control signals, the display driver chip is used to provide initialization control signals and data voltages for the pixel circuit, the power chip is used to provide power signals for the pixel circuit; the pixel circuit is any one of the above first aspects The pixel circuit.
本申请实施例提供显示屏达到的有益效果可以参见上述第一方面中对应的描述,此处不赘述。The beneficial effects achieved by the display screen provided by the embodiments of the present application can be found in the corresponding description in the first aspect above, and will not be described again here.
附图说明Description of drawings
图1所示为一种像素电路的示意图;Figure 1 shows a schematic diagram of a pixel circuit;
图2所示为本申请实施例提供的显示装置的结构示意图;Figure 2 shows a schematic structural diagram of a display device provided by an embodiment of the present application;
图3所示为本申请实施例提供的显示装置的结构示意图;Figure 3 shows a schematic structural diagram of a display device provided by an embodiment of the present application;
图4所示为本申请实施例提供的像素电路的示意图;Figure 4 shows a schematic diagram of a pixel circuit provided by an embodiment of the present application;
图5所示为本申请实施例提供的像素电路的时序示意图;Figure 5 shows a timing diagram of a pixel circuit provided by an embodiment of the present application;
图6所示为本申请实施例提供的像素电路的示意图;Figure 6 shows a schematic diagram of a pixel circuit provided by an embodiment of the present application;
图7所示为本申请实施例提供的像素电路的时序示意图;Figure 7 shows a timing diagram of a pixel circuit provided by an embodiment of the present application;
图8所示为本申请实施例提供的像素电路的示意图;Figure 8 shows a schematic diagram of a pixel circuit provided by an embodiment of the present application;
图9所示为本申请实施例提供的像素电路的时序示意图;Figure 9 shows a timing diagram of a pixel circuit provided by an embodiment of the present application;
图10所示为本申请实施例提供的电压补偿效果的仿真结果示意图; Figure 10 shows a schematic diagram of the simulation results of the voltage compensation effect provided by the embodiment of the present application;
图11所示为本申请实施例提供的补偿效果的示意图;Figure 11 shows a schematic diagram of the compensation effect provided by the embodiment of the present application;
图12所示为本申请实施例提供的像素电路的时序示意图。FIG. 12 shows a timing diagram of a pixel circuit provided by an embodiment of the present application.
具体实施方式Detailed ways
下面结合附图对本申请的实施例进行描述。The embodiments of the present application are described below with reference to the accompanying drawings.
为了便于理解本申请方案,首先结合图1描述现有OLED显示屏的像素电路存在的问题。In order to facilitate understanding of the solution of the present application, the problems existing in the pixel circuit of the existing OLED display screen are first described with reference to FIG. 1 .
图1所示为现有的像素电路的电路结构。所述像素电路包括7个薄膜晶体管(thin film transistor,TFT)、1个电容Cst和有机发光二极管(organic light-emitting diode,OLED)。所述7个TFT分别为图1中所示的T1、T2、T3、T4、T5、T6和DT。其中,T1和T4为铟镓锌氧化物(indium gallium zinc oxide,IGZO)TFT,晶体管T2、T3、T5、T6和DT为低温多晶硅(low temperature polycrystalline silicon,LTPS)TFT。所述DT为驱动(drive)晶体管,用于驱动所述OLED发光。所述7个TFT、电容Cst和OLED的具体连接关系如图1所示,此处不赘述。Figure 1 shows the circuit structure of a conventional pixel circuit. The pixel circuit includes 7 thin film transistors (TFT), 1 capacitor Cst and organic light-emitting diode (OLED). The seven TFTs are T1, T2, T3, T4, T5, T6 and DT shown in Figure 1 respectively. Among them, T1 and T4 are indium gallium zinc oxide (IGZO) TFTs, and transistors T2, T3, T5, T6 and DT are low temperature polycrystalline silicon (LTPS) TFTs. The DT is a drive transistor, used to drive the OLED to emit light. The specific connection relationship between the seven TFTs, the capacitor Cst and the OLED is shown in Figure 1 and will not be described again here.
薄膜晶体管TFT属于场效应晶体管,因此TFT的三个电极为源极(source)、栅极(gate)和漏极(drain)。TFT可以通过从栅极输入控制信号来控制自身的导通和关断。Thin film transistor TFT is a field effect transistor, so the three electrodes of TFT are source, gate and drain. The TFT can control its own on and off by inputting a control signal from the gate.
可以通过栅极控制信号IGZO G1控制晶体管T1的导通和关断。所述栅极控制信号IGZO G1中用IGZO表示所述控制信号是控制IGZO TFT的控制信号,G1中的G表示是输入到栅极(gate)的控制信号,G1中的1是一个序号,用于区分不同晶体管的控制信号。后续的描述的晶体管的栅极控制信号的表示符号的含义可以参考此处的描述,后面不再赘述。可以通过栅极控制信号LTPS G2控制晶体管T2和晶体管T6的导通和关断。可以通过栅极控制信号LTPS G3控制晶体管T3的导通和关断。可以通过栅极控制信号IGZO G4控制晶体管T4的导通和关断。可以通过栅极控制信号LTPS G5控制晶体管T5的导通和关断。The turn-on and turn-off of the transistor T1 can be controlled by the gate control signal IGZO G1. The gate control signal IGZO G1 uses IGZO to indicate that the control signal is a control signal that controls the IGZO TFT. The G in G1 indicates the control signal input to the gate. The 1 in G1 is a serial number. Use To distinguish the control signals of different transistors. The meanings of the symbols representing the gate control signals of the transistors described later can be referred to the description here, and will not be described again. The turn-on and turn-off of the transistor T2 and the transistor T6 can be controlled by the gate control signal LTPS G2. The turn-on and turn-off of the transistor T3 can be controlled by the gate control signal LTPS G3. The turn-on and turn-off of the transistor T4 can be controlled by the gate control signal IGZO G4. The turn-on and turn-off of the transistor T5 can be controlled by the gate control signal LTPS G5.
在图1中,vinit1和vinit2是初始化控制信号,可以为一个输入电压,用于初始化电路。Vdata是表征像素数据的电压,将所述电压Vdata写入到电路中,可以用于控制OLED的发光亮度。Vss表示接地端电压。In Figure 1, vinit1 and vinit2 are initialization control signals, which can be an input voltage used to initialize the circuit. V data is a voltage that represents pixel data. The voltage V data is written into the circuit and can be used to control the luminance of the OLED. Vss represents the ground terminal voltage.
通过控制上述7个晶体管的导通或关断可以实现像素电路的初始化、电压补偿、数据写入和OLED的发光。By controlling the on or off of the above seven transistors, the initialization of the pixel circuit, voltage compensation, data writing and OLED lighting can be achieved.
像素电路的初始化可以使得像素电路恢复到初始的状态,减少上一帧图像的像素对下一帧图像的像素显示的影响。可以通过栅极控制信号IGZO G4和栅极控制信号LTPS G3控制晶体管T4和晶体管T3导通,其它晶体管关断。从而使得节点N4处的电压初始化为vinit2,即使得OLED的阳极复位。并且,使得节点N1处的电压可以初始化为vinit1。The initialization of the pixel circuit can restore the pixel circuit to its initial state, reducing the impact of the pixels of the previous frame image on the pixel display of the next frame image. The transistor T4 and the transistor T3 can be controlled to be turned on and other transistors turned off through the gate control signal IGZO G4 and the gate control signal LTPS G3. As a result, the voltage at node N4 is initialized to vinit2, that is, the anode of the OLED is reset. And, the voltage at node N1 can be initialized to vinit1.
电压补偿可以补偿由于电路中的晶体管漏电和制作工艺问题而导致下降的电压。数据写入就是将像素数据以电压的形式保存到像素电路的电容中。在图1所示的像素电路中,电压补偿和数据写入是一起实现的。通过栅极控制信号LTPS G5控制晶体管T5导通,并通过栅极控制信号IGZO G1控制晶体管T1导通,其它晶体管关断。此时,由于晶体管DT栅极的电压低于晶体管DT源极(图1中晶体管DT与节点N2连接的电极)的电压,晶体管DT也导通。这是因为晶体管DT的导通是通过电压Vgs控制的,Vgs<Vth时,DT导通。Vgs为晶体管DT栅极的电压相对于源极的电压之间的电压差。Vth为晶体管DT的阈值电压。Voltage compensation compensates for voltage drops caused by transistor leakage and manufacturing process issues in the circuit. Data writing is to save pixel data in the form of voltage into the capacitor of the pixel circuit. In the pixel circuit shown in Figure 1, voltage compensation and data writing are implemented together. The transistor T5 is controlled to be turned on by the gate control signal LTPS G5, the transistor T1 is controlled to be turned on by the gate control signal IGZO G1, and the other transistors are turned off. At this time, since the voltage of the gate of the transistor DT is lower than the voltage of the source of the transistor DT (the electrode connected to the node N2 of the transistor DT in FIG. 1), the transistor DT is also turned on. This is because the conduction of the transistor DT is controlled by the voltage V gs . When V gs < V th , the DT is turned on. Vgs is the voltage difference between the voltage at the gate of transistor DT relative to the voltage at the source. Vth is the threshold voltage of transistor DT.
由此,数据电压Vdata通过导通的晶体管T5、晶体管DT和晶体管T1,向电容Cst充电,也即向晶体管DT的栅极充电。在充电的过程中,晶体管DT的栅极电压逐渐升高。直至晶体管DT的栅极和源极的电压差等于晶体管DT的阈值电压Vth时,晶体管DT关断。此时, 节点N2处的电压为Vdata,即晶体管DT的源极的电压为Vdata。则节点N1处的电压为Vdata+Vth。由于晶体管T1导通,使得节点N3处的电压等于节点N1处的电压。即节点N3处的电压为Vdata+VthAs a result, the data voltage V data charges the capacitor Cst through the turned-on transistor T5, the transistor DT, and the transistor T1, that is, the data voltage V data charges the gate of the transistor DT. During the charging process, the gate voltage of the transistor DT gradually increases. Until the voltage difference between the gate electrode and the source electrode of the transistor DT is equal to the threshold voltage V th of the transistor DT, the transistor DT is turned off. at this time, The voltage at the node N2 is V data , that is, the voltage at the source of the transistor DT is V data . Then the voltage at node N1 is V data +V th . Since transistor T1 is turned on, the voltage at node N3 is equal to the voltage at node N1. That is, the voltage at node N3 is V data +V th .
OLED发光的过程是通过驱动电流驱动OLED发光的过程。在上述数据写入后,通过栅极控制信号LTPS G2控制晶体管T2和T6导通,其它的晶体管都关断。通过VDD产生的驱动电流流过晶体管DT后驱动OLED发光。其中,电容Cst可以控制晶体管DT的栅极电压,使得晶体管DT可以正常导通。所述驱动电流的大小可以用如下公式表示:
The process of OLED emitting light is the process of driving OLED to emit light through driving current. After the above data is written, the transistors T2 and T6 are controlled to be turned on by the gate control signal LTPS G2, and the other transistors are turned off. The driving current generated by VDD flows through the transistor DT and drives the OLED to emit light. Among them, the capacitor Cst can control the gate voltage of the transistor DT, so that the transistor DT can be turned on normally. The size of the driving current can be expressed by the following formula:
其中,μ表示晶体管DT的载流子迁移率,W为晶体管DT中沟道的宽度,L为晶体管DT中沟道的长度,Cox为晶体管DT单位面积的栅氧化层电容,Vgs为晶体管DT的栅极相对于源极的电压。晶体管DT的源极电压即为节点N2处的电压,由于晶体管T6导通,节点N2处的电压等于VDD。晶体管DT栅极的电压即为节点N1处的电压,在上述数据写入阶段可知,节点N1处的电压=节点N3处的电压=Vdata+Vth。则Vgs=(Vdata+Vth)-VDD,由此可得Vgs-Vth=((Vdata+Vth)-VDD)-Vth=Vdata-VDD。通过所述公式可以看到,所述驱动电流Ids与晶体管DT的阈值电压Vth无关,实现了对晶体管DT的阈值电压的补偿。Among them, μ represents the carrier mobility of the transistor DT, W is the width of the channel in the transistor DT, L is the length of the channel in the transistor DT, C ox is the gate oxide capacitance per unit area of the transistor DT, and V gs is the transistor The voltage of DT's gate relative to its source. The source voltage of transistor DT is the voltage at node N2. Since transistor T6 is turned on, the voltage at node N2 is equal to VDD. The voltage at the gate of transistor DT is the voltage at node N1. In the above data writing stage, it can be seen that the voltage at node N1 = the voltage at node N3 = V data + V th . Then V gs =(V data +V th )-VDD, from which it can be obtained that V gs -V th =((V data +V th )-VDD)-V th =V data -VDD. It can be seen from the formula that the driving current I ds has nothing to do with the threshold voltage V th of the transistor DT, thus realizing compensation for the threshold voltage of the transistor DT.
在上述图1所示的像素电路中,晶体管T2、T3、T5、T6和DT为LTPS TFT,LTPS TFT的导通电流高,但漏电流也很高。当电路在低频状态(例如频率为1~10Hz)工作的时候,漏电流高会导致电路的电压慢慢下降,导致OLED在不同时间的发光亮度不同,即出现闪烁的问题。特别是晶体管T5和T2,其漏电流过大影响了数据写入和电压补偿的效果。In the pixel circuit shown in Figure 1 above, the transistors T2, T3, T5, T6 and DT are LTPS TFTs. The on-current of LTPS TFTs is high, but the leakage current is also high. When the circuit operates in a low-frequency state (for example, the frequency is 1 to 10 Hz), high leakage current will cause the voltage of the circuit to slowly decrease, causing the OLED to emit different brightness at different times, causing flickering problems. Especially the leakage current of transistors T5 and T2 is too large, which affects the effect of data writing and voltage compensation.
基于上述的描述可知,上述图1所示的像素电路中,电压补偿和数据写入的过程是同时完成的,补偿时间与数据写入时间强耦合,无法单独调节补偿时间。当不同的显示屏因为工艺波动需要不同的补偿时间时,无法灵活调节补偿时间会影响电压补偿效果,进而影响显示效果的均匀性。Based on the above description, it can be seen that in the pixel circuit shown in Figure 1, the voltage compensation and data writing processes are completed simultaneously. The compensation time and the data writing time are strongly coupled, and the compensation time cannot be adjusted independently. When different display screens require different compensation times due to process fluctuations, the inability to flexibly adjust the compensation time will affect the voltage compensation effect, thereby affecting the uniformity of the display effect.
为了解决上述的问题,本申请实施例提供了一种像素电路和一种显示装置。所述像素电路可以减少漏电流,从而保持电路电压的稳定,减少发OLED光闪烁的问题。所述像素电路的电压补偿阶段和数据写入阶段可以分开控制,进而可以灵活调节补偿时间,优化补偿结果,进而优化显示效果。In order to solve the above problems, embodiments of the present application provide a pixel circuit and a display device. The pixel circuit can reduce leakage current, thereby maintaining the stability of the circuit voltage and reducing the problem of OLED light flickering. The voltage compensation stage and the data writing stage of the pixel circuit can be controlled separately, so that the compensation time can be flexibly adjusted, the compensation results can be optimized, and the display effect can be optimized.
参见图2,示例性介绍本申请实施例提供的显示装置200的电路结构示意图。示例性地,所述显示装置200可以为显示屏。Referring to FIG. 2 , a schematic circuit structure diagram of a display device 200 provided by an embodiment of the present application is exemplarily introduced. For example, the display device 200 may be a display screen.
如图2所示,显示装置200包括显示屏基板210和电路板220。其中,显示屏基板210中包括多个像素电路,图2中以一个像素电路211为例示出。所述像素电路211与发光二极管214连接,以用于驱动所述发光二极管214发光。显示屏基板210中还包括栅极驱动电路212和栅极驱动电路213。所述栅极驱动电路212和栅极驱动电路213分别与像素电路211连 接,用于为像素电路211提供栅极控制信号。As shown in FIG. 2 , the display device 200 includes a display screen substrate 210 and a circuit board 220 . The display screen substrate 210 includes multiple pixel circuits, and one pixel circuit 211 is shown in FIG. 2 as an example. The pixel circuit 211 is connected to the light-emitting diode 214 for driving the light-emitting diode 214 to emit light. The display screen substrate 210 also includes a gate driving circuit 212 and a gate driving circuit 213. The gate driving circuit 212 and the gate driving circuit 213 are respectively connected to the pixel circuit 211. is connected to provide a gate control signal to the pixel circuit 211.
上述电路板220中包括显示驱动芯片(display driver integrated circuit,DDIC)221和电源芯片222。显示驱动芯片221分别与像素电路211、栅极驱动电路212和栅极驱动电路213连接。显示驱动芯片221用于为像素电路211提供电源信号和像素数据。并且,显示驱动芯片221用于为栅极驱动电路212和栅极驱动电路213提供时钟信号。栅极驱动电路212和栅极驱动电路213可以基于所述时钟信号来为像素电路211提供栅极控制信号。所述栅极控制信号的高低电平基于所述时钟信号来控制。The above-mentioned circuit board 220 includes a display driver chip (display driver integrated circuit, DDIC) 221 and a power chip 222. The display driving chip 221 is connected to the pixel circuit 211, the gate driving circuit 212 and the gate driving circuit 213 respectively. The display driver chip 221 is used to provide power signals and pixel data to the pixel circuit 211 . Furthermore, the display driving chip 221 is used to provide clock signals to the gate driving circuit 212 and the gate driving circuit 213 . The gate driving circuit 212 and the gate driving circuit 213 may provide a gate control signal to the pixel circuit 211 based on the clock signal. The high and low levels of the gate control signal are controlled based on the clock signal.
上述电源芯片222分别与像素电路211、栅极驱动电路212和栅极驱动电路213连接。所述电源芯片222可以用于为像素电路211、栅极驱动电路212和栅极驱动电路213提供所需的电源信号。The power chip 222 is connected to the pixel circuit 211, the gate driving circuit 212 and the gate driving circuit 213 respectively. The power chip 222 can be used to provide required power signals for the pixel circuit 211, the gate driving circuit 212 and the gate driving circuit 213.
在本申请实施例的一些实施方式中,上述电路板220可以是柔性印刷电路板。In some implementations of the embodiments of the present application, the above-mentioned circuit board 220 may be a flexible printed circuit board.
在本申请实施例的一些实施方式中,上述显示装置200可以应用于各种电子设备中。示例性地,所述电子设备可以包括但不限于任何一种基于智能操作系统的电子产品,其可与用户通过键盘、虚拟键盘、触摸板、触摸屏以及声控设备等输入设备来进行人机交互。诸如智能手机、平板电脑(tablet personal computer,Tablet PC)、手持计算机、可穿戴电子设备(例如VR眼镜和智能手表等等)、个人计算机(personal computer,PC)和台式计算机等。电子设备还可以包括但不限于任何一种物联网(internet of things,IoT)设备。In some implementations of the embodiments of the present application, the above-mentioned display device 200 can be applied to various electronic devices. For example, the electronic device may include but is not limited to any electronic product based on an intelligent operating system, which can perform human-computer interaction with the user through input devices such as keyboards, virtual keyboards, touch pads, touch screens, and voice control devices. Such as smartphones, tablet computers (tablet personal computer, Tablet PC), handheld computers, wearable electronic devices (such as VR glasses and smart watches, etc.), personal computers (personal computer, PC) and desktop computers. Electronic devices may also include, but are not limited to, any kind of Internet of Things (IoT) devices.
为了便于理解,图3以电子设备为智能手表为例示出了对应显示装置的结构示意图。图3中所示智能手表的显示装置中包括显示区和显示区外边缘区域。所述显示区中设置有多个像素电路。所述多个像素电路可以按行来排列设置,每一行设置的像素电路的数量可以相同或者可以不同。一个像素电路用于显示一个像素。所述显示区外边缘区域中可以设置栅极驱动电路。显示区外边缘区域中还设置有柔性印刷电路板中的显示驱动芯片。所述柔性印刷电路板可以弯曲到显示区外边缘区域的背面。For ease of understanding, FIG. 3 shows a schematic structural diagram of the corresponding display device, taking the electronic device as a smart watch as an example. The display device of the smart watch shown in Figure 3 includes a display area and an outer edge area of the display area. A plurality of pixel circuits are provided in the display area. The plurality of pixel circuits may be arranged in rows, and the number of pixel circuits arranged in each row may be the same or different. A pixel circuit is used to display one pixel. A gate driving circuit may be provided in the outer edge area of the display area. A display driver chip in the flexible printed circuit board is also disposed in the outer edge area of the display area. The flexible printed circuit board can be bent to the backside of the outer edge area of the display area.
示例性地,在具体实现中,每一个像素电路可以由多组栅极驱动电路来控制。每一组栅极驱动电路可以包括多行栅极驱动电路,所述多行栅极驱动电路中每一行栅极驱动电路可以提供一个或多个栅极控制信号。示例性地,有一组栅极驱动电路可以为像素电路提供发光控制信号,所述发光控制信号可以示例性地参见下面图4中晶体管T2的栅极控制信号Emit。另外有一组或多组栅极驱动电路可以为像素电路提供栅极扫描信号,所述栅极扫描信号可以示例性地参见下面图4中晶体管T4的栅极控制信号scan1、晶体管T3的栅极控制信号scan2和晶体管T1的栅极控制信号scan3。并且,另外有一组或多组栅极驱动电路可以为像素电路提供其它的栅极控制信号,所述其它的栅极控制信号可以示例性地参见下面图4中晶体管T5的栅极控制信号G1。此处仅为一个示例,本申请实施例对一个像素电路具体由多少组驱动电路控制不做限制。For example, in a specific implementation, each pixel circuit can be controlled by multiple sets of gate driving circuits. Each group of gate driving circuits may include a plurality of rows of gate driving circuits, and each row of gate driving circuits in the plurality of rows of gate driving circuits may provide one or more gate control signals. For example, there is a set of gate driving circuits that can provide a light-emitting control signal for the pixel circuit. The light-emitting control signal can be exemplified by referring to the gate control signal Emit of the transistor T2 in FIG. 4 below. In addition, there are one or more sets of gate driving circuits that can provide gate scanning signals for the pixel circuit. The gate scanning signals can be exemplified by the gate control signal scan1 of the transistor T4 and the gate control of the transistor T3 in Figure 4 below. signal scan2 and gate control signal scan3 of transistor T1. Moreover, there are one or more groups of gate driving circuits that can provide other gate control signals for the pixel circuit. The other gate control signals can be exemplarily referred to the gate control signal G1 of the transistor T5 in FIG. 4 below. This is just an example. The embodiment of the present application does not limit how many groups of driving circuits a pixel circuit is controlled by.
需要说明的是,上述图2和图3中所示的显示装置只是示例性地画出了部分组成部件,具体实现中还包括其它组成部件,本申请实施例对此不做限制。It should be noted that the display device shown in FIG. 2 and FIG. 3 is only an example of some components, and the specific implementation may also include other components, which are not limited by the embodiments of the present application.
本申请实施例提供的像素电路可以示例性地参见图4。在图4所示的像素电路中,包括6个薄膜晶体管TFT、2个电容和1个OLED。所述薄膜晶体管TFT可以包括T1、T2、T3、T4、T5和DT。其中,晶体管T1、T3、T4和T5为IGZO TFT,晶体管T2和DT为LTPS TFT。DT为驱动晶体管,用于驱动OLED发光。电容包括C1和C2。图4所示的像素电路中电容C1和用于存储数据电压的电容C2的漏电通路中的晶体管T1、T4和T5都使用的是IGZO TFT, 与OLED连接的晶体管T3也采用的是IGZO TFT。与上述图1所示的像素电路相比,整体上减少了像素电路的漏电流,保持像素电路的电压稳定,优化OLED的显示效果。与上述图1所示的像素电路相比,图4所示的像素电路的具体连接关系与之不同,例如晶体管的数量和用于输入数据电压Vdata的晶体管T5的连接位置等不同。通过图4所示像素电路,可以分开控制所述像素电路的电压补偿阶段和数据写入阶段,进而可以灵活调节补偿时间,优化补偿结果,进而优化显示效果。The pixel circuit provided by the embodiment of the present application can be exemplified by reference to FIG. 4 . The pixel circuit shown in Figure 4 includes 6 thin film transistors TFT, 2 capacitors and 1 OLED. The thin film transistor TFT may include T1, T2, T3, T4, T5, and DT. Among them, the transistors T1, T3, T4 and T5 are IGZO TFTs, and the transistors T2 and DT are LTPS TFTs. DT is a driving transistor, used to drive OLED to emit light. Capacitors include C1 and C2. In the pixel circuit shown in Figure 4, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 used to store the data voltage all use IGZO TFTs. The transistor T3 connected to the OLED also uses IGZO TFT. Compared with the pixel circuit shown in Figure 1 above, the leakage current of the pixel circuit is reduced as a whole, the voltage of the pixel circuit is kept stable, and the display effect of the OLED is optimized. Compared with the pixel circuit shown in FIG. 1, the specific connection relationship of the pixel circuit shown in FIG. 4 is different, such as the number of transistors and the connection position of the transistor T5 for inputting the data voltage V data . Through the pixel circuit shown in Figure 4, the voltage compensation stage and the data writing stage of the pixel circuit can be controlled separately, so that the compensation time can be flexibly adjusted, the compensation result can be optimized, and the display effect can be optimized.
所述6个晶体管中每个晶体管包括第一电极、第二电极和栅极。若一个晶体管的第一电极是源极,所述晶体管的第二电极则为漏极。或者,若一个晶体管的第一电极是漏极,所述晶体管的第二电极则为源极。每个晶体管的第一电极具体是源极还是漏极根据实际实现的功能来确定。同理,每个晶体管的第二电极具体是源极还是漏极也是根据实际实现的功能来确定。本申请实施例的描述中不限定第一电极和第二电极的具体电极属性。图4中用“①”表示晶体管的第一电极,用“②”表示晶体管的第二电极。Each of the six transistors includes a first electrode, a second electrode and a gate electrode. If the first electrode of a transistor is the source, the second electrode of the transistor is the drain. Alternatively, if the first electrode of a transistor is the drain, the second electrode of the transistor is the source. Whether the first electrode of each transistor is the source or the drain is determined based on the actually implemented function. In the same way, whether the second electrode of each transistor is the source or the drain is also determined based on the actual implemented function. The description of the embodiments of the present application does not limit the specific electrode properties of the first electrode and the second electrode. In Figure 4, "①" represents the first electrode of the transistor, and "②" represents the second electrode of the transistor.
在图4所示的像素电路中,晶体管T1的第一电极与晶体管T5的第一电极连接相交于节点N1,晶体管T1的第二电极与晶体管T2的第一电极连接相交于节点N3。晶体管T1的栅极与第一栅极驱动电路连接。在图4中,用符号“(g)”表示晶体管的栅极,“(g)”后面的符号表示该栅极的控制信号。例如晶体管T1的栅极上的符号“(g)scan3”中,“(g)”表示晶体管T1的栅极,“scan3”表示该栅极的控制信号。其它晶体管的栅极上所示的符号同理,不再赘述。所述第一栅极驱动电路可以产生栅极控制信号scan3。通过所述栅极控制信号scan3控制晶体管T1的导通和关断。例如,所述第一栅极驱动电路可以是图2中的栅极驱动电路212或栅极驱动电路213,或者可以是图2中未画出的另外的驱动栅极电路。In the pixel circuit shown in FIG. 4 , the first electrode of the transistor T1 and the first electrode of the transistor T5 are connected and intersected at the node N1 , and the second electrode of the transistor T1 and the first electrode of the transistor T2 are connected and intersected at the node N3 . The gate of the transistor T1 is connected to the first gate drive circuit. In FIG. 4 , the symbol “(g)” represents the gate of the transistor, and the symbol following “(g)” represents the control signal of the gate. For example, in the symbol "(g)scan3" on the gate of the transistor T1, "(g)" represents the gate of the transistor T1, and "scan3" represents the control signal of the gate. The symbols shown on the gates of other transistors are the same and will not be described again. The first gate driving circuit may generate the gate control signal scan3. The gate control signal scan3 controls the on and off of the transistor T1. For example, the first gate driving circuit may be the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
晶体管T2的第二电极可以与电源芯片连接。所述电源芯片可以将电源电压VDD从所述晶体管T2的第二电极输入到像素电路。所述电源芯片例如可以是图2中的电源芯片222。示例性地,所述VDD可以是大功率电源电压PVDD。晶体管T2的栅极与第二栅极驱动电路连接。所述第二栅极驱动电路可以产生栅极控制信号Emit。通过所述栅极控制信号Emit控制晶体管T2的导通和关断。所述第二栅极驱动电路例如可以是图2中的栅极驱动电路212或栅极驱动电路213,或者可以是图2中未画出的另外的驱动栅极电路。The second electrode of the transistor T2 may be connected to the power chip. The power chip may input the power supply voltage VDD from the second electrode of the transistor T2 to the pixel circuit. The power chip may be, for example, the power chip 222 in FIG. 2 . For example, the VDD may be a high-power power supply voltage PVDD. The gate of the transistor T2 is connected to the second gate drive circuit. The second gate driving circuit may generate the gate control signal Emit. The gate control signal Emit controls the on and off of the transistor T2. The second gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
晶体管T5的第二电极与显示驱动芯片连接。所述显示驱动芯片可以将像素数据的电压Vdata从所述晶体管T5的第二电极输入到像素电路。所述显示驱动芯片例如可以是图2中的显示驱动芯片221。晶体管T5的栅极与第五栅极驱动电路连接。所述第五栅极驱动电路可以产生栅极控制信号G1。通过所述栅极控制信号G1控制晶体管T5的导通和关断。所述第五栅极驱动电路例如可以是图2中的栅极驱动电路212或栅极驱动电路213,或者可以是图2中未画出的另外的驱动栅极电路。The second electrode of the transistor T5 is connected to the display driver chip. The display driving chip may input the voltage V data of the pixel data from the second electrode of the transistor T5 to the pixel circuit. The display driver chip may be, for example, the display driver chip 221 in FIG. 2 . The gate of the transistor T5 is connected to the fifth gate driving circuit. The fifth gate driving circuit may generate the gate control signal G1. The gate control signal G1 controls the on and off of the transistor T5. The fifth gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
晶体管T5的第一电极和晶体管T1的第一电极还与电容C1的第一端连接相交于节点N1。图4中用“①”表示电容C1的第一端。电容C1的第二端与晶体管T2的第二电极连接。图4中用“②”表示电容C1的第二端。The first electrode of the transistor T5 and the first electrode of the transistor T1 are also connected to the first terminal of the capacitor C1 and intersect at the node N1. In Figure 4, “①” is used to indicate the first end of capacitor C1. The second terminal of the capacitor C1 is connected to the second electrode of the transistor T2. In Figure 4, “②” is used to indicate the second end of capacitor C1.
晶体管T5的第一电极、晶体管T1的第一电极以及电容C1的第一端还与电容C2的第一端连接相交于节点N1。图4中用“①”表示电容C2的第一端。The first electrode of the transistor T5, the first electrode of the transistor T1 and the first end of the capacitor C1 are also connected to the first end of the capacitor C2 and intersect at the node N1. In Figure 4, “①” represents the first end of capacitor C2.
电容C2的第二端与晶体管T4的第一电极连接相交于节点N2。图4中用“②”表示电容C2的第二端。The second terminal of capacitor C2 intersects the first electrode connection of transistor T4 at node N2. In Figure 4, “②” is used to indicate the second end of capacitor C2.
晶体管T4的第二电极与显示驱动芯片连接。所述显示驱动芯片可以将初始化控制信号vinit2从所述晶体管T4的第二电极输入到像素电路。所述显示驱动芯片例如可以是图2中的 显示驱动芯片221。初始化控制信号vinit2可以是一个输入电压。晶体管T4的栅极与第四栅极驱动电路连接。所述第四栅极驱动电路可以产生栅极控制信号scan1。通过所述栅极控制信号scan1控制晶体管T4的导通和关断。所述第四栅极驱动电路例如可以是图2中的栅极驱动电路212或栅极驱动电路213,或者可以是图2中未画出的另外的驱动栅极电路。The second electrode of the transistor T4 is connected to the display driver chip. The display driver chip may input the initialization control signal vinit2 from the second electrode of the transistor T4 to the pixel circuit. The display driver chip may be, for example, the one shown in Figure 2 Display driver chip 221. The initialization control signal vinit2 can be an input voltage. The gate of the transistor T4 is connected to the fourth gate driving circuit. The fourth gate driving circuit may generate the gate control signal scan1. The gate control signal scan1 controls the on and off of the transistor T4. The fourth gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
晶体管T4的第一电极和电容C2的第二端还与晶体管DT的栅极连接相交于节点N2。晶体管DT的第一电极与晶体管T2的第一电极连接,还与晶体管T1的第二电极连接相交于节点N3。晶体管DT的第二电极与晶体管T3的第一电极连接相交于节点N4。晶体管DT的第一电极为晶体管的源极。The first electrode of transistor T4 and the second end of capacitor C2 also intersect the gate connection of transistor DT at node N2. The first electrode of the transistor DT is connected to the first electrode of the transistor T2 and is also connected to the second electrode of the transistor T1 and intersects at the node N3. The second electrode of transistor DT intersects the first electrode of transistor T3 at node N4. The first electrode of the transistor DT is the source of the transistor.
晶体管T3的第二电极与显示驱动芯片连接。所述显示驱动芯片可以将初始化控制信号vinit1从所述晶体管T3的第二电极输入到像素电路。所述显示驱动芯片例如可以是图2中的显示驱动芯片221。初始化控制信号vinit1可以是一个输入电压。晶体管T3的栅极与第三栅极驱动电路连接。所述第三栅极驱动电路可以产生栅极控制信号scan2。通过所述栅极控制信号scan2控制晶体管T3的导通和关断。所述第三栅极驱动电路例如可以是图2中的栅极驱动电路212或栅极驱动电路213,或者可以是图2中未画出的另外的驱动栅极电路。The second electrode of the transistor T3 is connected to the display driver chip. The display driver chip may input the initialization control signal vinit1 from the second electrode of the transistor T3 to the pixel circuit. The display driver chip may be, for example, the display driver chip 221 in FIG. 2 . The initialization control signal vinit1 can be an input voltage. The gate of the transistor T3 is connected to the third gate driving circuit. The third gate driving circuit may generate the gate control signal scan2. The gate control signal scan2 controls the on and off of the transistor T3. The third gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
晶体管DT的第二电极和晶体管T3的第一电极还与OLED的阳极连接相交于节点N4。OLED的阴极连接的是接地端电压Vss。示例性地,所述Vss可以是大功率接地端电压PVss。The second electrode of transistor DT and the first electrode of transistor T3 also intersect the anode connection of the OLED at node N4. The cathode of the OLED is connected to the ground terminal voltage Vss. For example, the Vss may be the high-power ground terminal voltage PVss.
在本申请实施例中,通过控制晶体管的导通或关断可以实现像素电路的初始化、电压补偿、数据写入和OLED的发光。像素电路的初始化阶段可以使得像素电路恢复到初始的状态,减少上一帧图像的像素对下一帧图像的像素显示的影响。电压补偿阶段可以补偿由于电路中的晶体管漏电和制作工艺问题而导致下降的电压。数据写入阶段就是将像素数据以电压的形式保存到像素电路的电容中。发光阶段就是通过驱动电流驱动OLED发光的过程。下面结合上述图4分阶段描述。In the embodiment of the present application, by controlling the on or off of the transistor, the initialization of the pixel circuit, voltage compensation, data writing and OLED light emission can be realized. The initialization stage of the pixel circuit can restore the pixel circuit to its initial state and reduce the impact of the pixels of the previous frame of image on the pixel display of the next frame of image. The voltage compensation stage compensates for voltage drops caused by transistor leakage and manufacturing process issues in the circuit. The data writing stage is to save the pixel data in the form of voltage into the capacitor of the pixel circuit. The light-emitting stage is the process of driving the OLED to emit light through driving current. The following is a staged description in conjunction with the above-mentioned Figure 4.
本申请实施例中,像素电路的初始化阶段和电压补偿阶段的控制逻辑相同。可以通过栅极控制信号scan3控制晶体管T1导通,通过栅极控制信号scan2控制晶体管T3导通,通过栅极控制信号scan1控制晶体管T4导通,另外控制晶体管T2和T5关断。因此使得节点N4处的电压初始化为vinit1,即使得OLED的阳极复位。使得节点N2处的电压可以初始化为vinit2。此时,节点N3处有上一帧像素显示时的残留电压,所述残留电压可以大于电压vinit1,可以在晶体管DT上产生电流。随着电流的流动,节点N3处的电压慢慢下降,即晶体管DT源极的电压慢慢下降。晶体管DT栅极的电压即节点N2处的电压已经初始化为vinit2。当晶体管DT栅极的电压和晶体管DT源极的电压之间的电压差Vgs=Vth时,晶体管DT上的电流截断。Vth为所述晶体管DT的阈值电压。则此时,节点N3处的电压为vinit2-Vth。由于晶体管T1导通,则使得节点N1处的电压与节点N3处的电压相等。则节点N1处的电压为vinit2-VthIn the embodiment of the present application, the control logic of the initialization stage and voltage compensation stage of the pixel circuit is the same. The transistor T1 can be controlled to be turned on by the gate control signal scan3, the transistor T3 can be controlled to be turned on by the gate control signal scan2, the transistor T4 can be controlled to be turned on by the gate control signal scan1, and the transistors T2 and T5 can be controlled to be turned off. Therefore, the voltage at node N4 is initialized to vinit1, that is, the anode of the OLED is reset. So that the voltage at node N2 can be initialized to vinit2. At this time, there is a residual voltage at the node N3 when the pixel of the previous frame was displayed. The residual voltage can be greater than the voltage vinit1, and a current can be generated in the transistor DT. As the current flows, the voltage at node N3 slowly decreases, that is, the voltage at the source of transistor DT slowly decreases. The voltage at the gate of transistor DT, that is, the voltage at node N2, has been initialized to vinit2. When the voltage difference between the voltage at the gate of the transistor DT and the voltage at the source of the transistor DT is V gs =V th , the current on the transistor DT is cut off. Vth is the threshold voltage of the transistor DT. At this time, the voltage at node N3 is vinit2-V th . Since the transistor T1 is turned on, the voltage at the node N1 is equal to the voltage at the node N3. Then the voltage at node N1 is vinit2-V th .
在本申请实施例的一些实现方式中,上述像素电路的初始化阶段和电压补偿阶段可以同时进行。或者,另在本申请实施例的一些实现方式中,可以先控制实现所述像素电路的初始化阶段,然后再控制实现像素电路的电压补偿阶段。In some implementations of the embodiments of the present application, the initialization phase and the voltage compensation phase of the above-mentioned pixel circuit can be performed simultaneously. Alternatively, in some implementations of the embodiments of the present application, the initialization phase of the pixel circuit may be controlled first, and then the voltage compensation phase of the pixel circuit may be controlled and implemented.
上述初始化完成之后,可以进行数据写入。可以通过栅极控制信号scan3控制晶体管T1导通,通过栅极控制信号G1控制晶体管T5导通,晶体管T2、T3、T4和DT关断。由于晶体管T5导通,像素数据的电压Vdata开始输入并为电容C2充电,充电完成则完成了Vdata的写入。电容C1可以辅助Vdata的写入,使得数据完成写入后节点N1处的电压等于Vdata。由于电容C1和电容C2的电容耦合效应,使得节点N1在数据写入后与写入前的电压差加到了节点N2上。节点N1在数据写入后的电压为Vdata,在数据写入前的电压为vinit2-Vth。上述 初始化后节点N2处的电压为vinit2。数据写入之后节点N2处的电压变为Vini2+{Vdata-(Vini2-Vth)}=Vdata+VthAfter the above initialization is completed, data can be written. The transistor T1 can be controlled to be turned on by the gate control signal scan3, the transistor T5 can be controlled to be turned on by the gate control signal G1, and the transistors T2, T3, T4 and DT can be turned off. Since the transistor T5 is turned on, the voltage V data of the pixel data starts to be input and charges the capacitor C2. When the charging is completed, the writing of V data is completed. Capacitor C1 can assist the writing of Vdata, so that the voltage at node N1 is equal to Vdata after the data is written. Due to the capacitive coupling effect of capacitor C1 and capacitor C2, the voltage difference between node N1 after data is written and before data is written is added to node N2. The voltage of node N1 after data is written is Vdata, and the voltage before data is written is vinit2-V th . above After initialization, the voltage at node N2 is vinit2. After the data is written, the voltage at the node N2 becomes Vini2+{V data -(Vini2-V th )}=V data +V th .
上述数据写入完成之后,可以驱动OLED发光。可以通过栅极控制信号Emit控制晶体管T2导通,晶体管T1、T3、T4和T5关断。由于T2导通,基于VDD产生的驱动电流流到晶体管DT,进而驱动电流留到OLED,驱动OLED发光。电容C2可以控制DT的栅极电压,使得DT可以正常导通。所述驱动电流的大小可以用如下公式表示:
After the above data writing is completed, the OLED can be driven to emit light. The transistor T2 can be controlled to be turned on and the transistors T1, T3, T4 and T5 to be turned off through the gate control signal Emit. Since T2 is turned on, the driving current generated based on VDD flows to the transistor DT, and then the driving current is left to the OLED, driving the OLED to emit light. Capacitor C2 can control the gate voltage of DT so that DT can conduct normally. The size of the driving current can be expressed by the following formula:
其中,μ表示晶体管DT的载流子迁移率,W为晶体管DT中沟道的宽度,L为晶体管DT中沟道的长度,Cox为晶体管DT单位面积的栅氧化层电容,Vgs为晶体管DT的栅极相对于源极的电压。晶体管DT的源极电压即为节点N3处的电压,由于晶体管T2导通,节点N3处的电压等于VDD。晶体管DT栅极的电压即为节点N2处的电压,在上述数据写入阶段可知,节点N2处的电压=Vdata+Vth。则Vgs=(Vdata+Vth)-VDD,由此可得Vgs-Vth=Vdata-VDD。Among them, μ represents the carrier mobility of the transistor DT, W is the width of the channel in the transistor DT, L is the length of the channel in the transistor DT, C ox is the gate oxide capacitance per unit area of the transistor DT, and V gs is the transistor The voltage of DT's gate relative to its source. The source voltage of transistor DT is the voltage at node N3. Since transistor T2 is turned on, the voltage at node N3 is equal to VDD. The voltage at the gate of the transistor DT is the voltage at the node N2. In the above data writing stage, it can be seen that the voltage at the node N2 = V data + V th . Then V gs =(V data +V th )-VDD, from which V gs -V th =V data -VDD can be obtained.
通过上述公式可以看到,所述驱动电流Ids与晶体管DT的电压Vth无关,实现了对晶体管DT的阈值电压的补偿。It can be seen from the above formula that the driving current I ds has nothing to do with the voltage V th of the transistor DT, thus realizing compensation for the threshold voltage of the transistor DT.
在本申请实施例的一些实施方式中,上述驱动OLED发光之后,还可以通过晶体管T2的栅极控制信号和晶体管T3的栅极控制信号的脉冲宽度调制(pulse width modulation,PWM)来调节OLED的发光亮度。In some implementations of the embodiments of this application, after the OLED is driven to emit light, the OLED can also be adjusted through pulse width modulation (PWM) of the gate control signal of the transistor T2 and the gate control signal of the transistor T3. Luminous brightness.
示例性地,可以参见图5。图5给出了上述初始化阶段、电压补偿阶段、数据写入阶段、发光阶段和调光阶段中各个晶体管的控制信号的时序示意图。For example, see Figure 5 . Figure 5 shows the timing diagram of the control signals of each transistor in the above-mentioned initialization stage, voltage compensation stage, data writing stage, light-emitting stage and dimming stage.
示例性地,假设晶体管T1、T3、T4和T5都是在栅极控制信号处于高电平时导通,处于低电平时关断。而晶体管T2是在栅极控制信号处于高电平时关断,处于低电平时导通。在图5中可以看到:For example, it is assumed that the transistors T1, T3, T4 and T5 are all turned on when the gate control signal is at a high level, and turned off when the gate control signal is at a low level. The transistor T2 is turned off when the gate control signal is at a high level and turned on when it is at a low level. In Figure 5 you can see:
在初始化阶段,控制栅极控制信号scan3、scan2和scan1均处于高电平,使得晶体管T1、T3和T4均导通。控制栅极控制信号Emit均处于高电平,使得晶体管T2关断。并且,控制栅极控制信号G1均处于低电平,使得晶体管T1、T3和T4均导通。In the initialization phase, the control gate control signals scan3, scan2 and scan1 are all at a high level, causing the transistors T1, T3 and T4 to all turn on. The control gate control signal Emit is both at a high level, causing the transistor T2 to turn off. Moreover, the control gate control signals G1 are all at a low level, so that the transistors T1, T3 and T4 are all turned on.
在电压补偿阶段,控制栅极控制信号scan3、scan2和scan1均处于高电平,使得晶体管T1、T3和T4均导通。控制栅极控制信号Emit均处于高电平,使得晶体管T2关断。并且,控制栅极控制信号G1均处于低电平,使得晶体管T1、T3和T4均导通。In the voltage compensation stage, the control gate control signals scan3, scan2 and scan1 are all at a high level, causing the transistors T1, T3 and T4 to all turn on. The control gate control signal Emit is both at a high level, causing the transistor T2 to turn off. Moreover, the control gate control signals G1 are all at a low level, so that the transistors T1, T3 and T4 are all turned on.
在数据写入阶段,控制栅极控制信号scan3和G1均处于高电平,使得晶体管T1和T5均导通。控制栅极控制信号scan2和scan1均处于低电平,使得晶体管T3和T4均导通。并且,控制栅极控制信号Emit均处于高电平,使得晶体管T2关断。During the data writing phase, the control gate control signals scan3 and G1 are both at a high level, causing the transistors T1 and T5 to both turn on. The control gate control signals scan2 and scan1 are both at a low level, causing both transistors T3 and T4 to be turned on. Moreover, the control gate control signal Emit is both at a high level, causing the transistor T2 to turn off.
在发光阶段,控制栅极控制信号Emit均处于低电平,使得晶体管T2导通。控制栅极控制信号scan3、scan2、scan1和G1均处于低电平,使得晶体管T1、T3、T4和T5均关断。During the light-emitting phase, the control gate control signal Emit is at a low level, causing the transistor T2 to be turned on. The control gate control signals scan3, scan2, scan1 and G1 are all at a low level, causing the transistors T1, T3, T4 and T5 to all turn off.
在调光阶段,控制栅极控制信号scan3、scan1和G1均处于低电平,使得晶体管T1、T4和T5均关断。然后,先控制Emit均处于高电平,使得晶体管T2关断;并且,控制scan2处 于高电平,使得晶体管T3导通。接着,再控制Emit均处于低电平,使得晶体管T2导通;并且,控制scan2处于低电平,使得晶体管T3关断。接着,再控制Emit均处于高电平,使得晶体管T2关断;并且,控制scan2处于高电平,使得晶体管T3导通。通过不断地控制晶体管T2和T3的导通和关闭来调节OLED的发光亮度。During the dimming stage, the control gate control signals scan3, scan1 and G1 are all at low level, causing the transistors T1, T4 and T5 to all turn off. Then, first control Emit to be at a high level, so that transistor T2 is turned off; and, control scan2 at a high level, causing transistor T3 to turn on. Then, Emit is controlled to be at a low level, so that the transistor T2 is turned on; and scan2 is controlled to be at a low level, so that the transistor T3 is turned off. Then, Emit is controlled to be at a high level, so that the transistor T2 is turned off; and scan2 is controlled to be at a high level, so that the transistor T3 is turned on. The OLED brightness is adjusted by continuously controlling the on and off of transistors T2 and T3.
需要说明的是,图5所示的时序图仅为一个示例,不构成对本申请实施例的限制。本申请实施例对晶体管是高电平导通还是低电平导通也不做限制,上述的描述仅为一个示例。It should be noted that the timing diagram shown in FIG. 5 is only an example and does not constitute a limitation on the embodiments of the present application. The embodiment of the present application does not limit whether the transistor is turned on at a high level or at a low level, and the above description is only an example.
在上述图4所示的像素电路中,电容C1和电容C2的漏电通路中的晶体管T1、T4和T5都使用的是IGZO TFT。IGZO TFT的导通电流虽然没有LTPS TFT的导通电流大,但IGZO TFT的导通电流适中,能够满足电路正常的工作需求。虽然LTPS TFT的导通电流大,但是其漏电流也大。像素电路中的晶体管采用漏电流大的LTPS TFT,在高频状态下工作时没有问题,但是当在低频状态下工作时,由于LTPS TFT的漏电流较大,会导致电路的电压慢慢下降,导致OLED在不同时间的发光亮度不同,即出现闪烁的问题。而IGZO TFT的漏电流较小,在低频工作状态下,可以改善电路中电压下降的问题,进而改善OLED显示闪烁的问题。因此,在上述图4所示的像素电路中,电容C1和电容C2的漏电通路中的晶体管T1、T4和T5使用IGZO TFT,实现低频工作状态下仍能保持较低的漏电流,使得电容C1和电容C2上的存储电荷能够高效保持,即能够保持电路中的电压,进而改善低频工作状态下OLED的闪烁问题。与OLED连接的晶体管T3也采用的是IGZO TFT,从而减少了晶体管T3的漏电。通过这样的设计,可以使得整个像素电路的漏电流整体减少,从而改善了所述像素电路在低频状态下工作时OLED的闪烁问题。并且,图4所示的像素电路也可以在高频状态下工作,并且仍能保持很好的工作性能。即本申请实施例提供的图4所示的像素电路,既可以在高频状态下工作,又可以在低频状态下工作,且改善了低频状态下工作时OLED的闪烁问题,使得OLED的显示效果更好。In the pixel circuit shown in Figure 4 above, the transistors T1, T4 and T5 in the leakage paths of capacitor C1 and capacitor C2 all use IGZO TFTs. Although the on-current of IGZO TFT is not as large as that of LTPS TFT, the on-current of IGZO TFT is moderate and can meet the normal working requirements of the circuit. Although the on-current of LTPS TFT is large, its leakage current is also large. The transistors in the pixel circuit use LTPS TFTs with large leakage current. There is no problem when working in a high-frequency state. However, when working in a low-frequency state, due to the large leakage current of the LTPS TFT, the voltage of the circuit will slowly decrease. As a result, the OLED emits different brightness at different times, causing the problem of flickering. The leakage current of IGZO TFT is small. Under low-frequency operation, it can improve the problem of voltage drop in the circuit, thereby improving the problem of OLED display flicker. Therefore, in the pixel circuit shown in Figure 4 above, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 use IGZO TFT to achieve a low leakage current under low-frequency operation, so that the capacitor C1 The stored charge on capacitor C2 can be maintained efficiently, that is, the voltage in the circuit can be maintained, thereby improving the flicker problem of OLED under low-frequency operation. The transistor T3 connected to the OLED also uses IGZO TFT, thereby reducing the leakage of the transistor T3. Through such a design, the leakage current of the entire pixel circuit can be reduced as a whole, thereby improving the flicker problem of the OLED when the pixel circuit operates in a low-frequency state. Moreover, the pixel circuit shown in Figure 4 can also work in a high-frequency state and still maintain good working performance. That is to say, the pixel circuit shown in Figure 4 provided by the embodiment of the present application can work in both high-frequency and low-frequency states, and improves the flickering problem of OLED when working in low-frequency state, making the OLED display effect better. better.
在像素电路中,如果电压补偿时间不足,则补偿电压后和目标电压不匹配,使得补偿效果不好,直接影响OLED显示效果。现有的方案中电压补偿和数据写入的时间强耦合,无法灵活调节电压补偿的时间。而在上述图4所示的像素电路中,电压补偿阶段和数据写入阶段是分开控制实现的。因此,可以灵活调节电压补偿的时间,例如可以通过调节晶体管T3的栅极控制信号scan2、晶体管T4的栅极控制信号scan1和晶体管T5的栅极控制信号G1在补偿阶段的上升沿或下降沿的时间来调节电压补偿的时间。所述上升沿或下降沿的时间可以由显示驱动芯片提供时钟信号来控制。即图4所示像素电路可以通过控制电压补偿的时间来改善OLED的显示效果。对于不同的显示屏可以对应调节电压补偿的时间来达到较优的显示效果,实现了补偿时间可以依据显示屏的工艺差异灵活调节,增加了像素电路应用的灵活性。In the pixel circuit, if the voltage compensation time is insufficient, the compensated voltage will not match the target voltage, causing the compensation effect to be poor and directly affecting the OLED display effect. In the existing solution, voltage compensation and data writing time are strongly coupled, and the voltage compensation time cannot be flexibly adjusted. In the pixel circuit shown in Figure 4 above, the voltage compensation stage and the data writing stage are controlled separately. Therefore, the time of voltage compensation can be flexibly adjusted, for example, by adjusting the rising edge or falling edge of the gate control signal scan2 of the transistor T3, the gate control signal scan1 of the transistor T4, and the gate control signal G1 of the transistor T5 during the compensation phase. time to adjust the voltage compensation time. The time of the rising edge or falling edge can be controlled by a clock signal provided by the display driver chip. That is, the pixel circuit shown in Figure 4 can improve the display effect of OLED by controlling the time of voltage compensation. For different display screens, the voltage compensation time can be adjusted accordingly to achieve a better display effect. The compensation time can be flexibly adjusted according to the process differences of the display screen, which increases the flexibility of pixel circuit application.
本申请实施例提供的像素电路还可以示例性地参见图6。图6所示的像素电路相比于图4所示的像素电路增加了一个晶体管T6。所述晶体管T6可以是IGZO TFT。或者,所述晶体管T6可以是LTPS TFT。The pixel circuit provided by the embodiment of the present application can also be exemplified by reference to FIG. 6 . Compared with the pixel circuit shown in FIG. 4 , the pixel circuit shown in FIG. 6 has an additional transistor T6 . The transistor T6 may be an IGZO TFT. Alternatively, the transistor T6 may be an LTPS TFT.
晶体管T1的第二电极、晶体管T2的第一电极和晶体管DT的第一电极均与所述晶体管T6的第一电极连接。The second electrode of the transistor T1, the first electrode of the transistor T2 and the first electrode of the transistor DT are all connected to the first electrode of the transistor T6.
晶体管T6的第二电极与显示驱动芯片连接。所述显示驱动芯片可以将初始化控制信号vinit3从所述晶体管T6的第二电极输入到像素电路。所述显示驱动芯片例如可以是图2中的显示驱动芯片221。初始化控制信号vinit3可以是一个输入电压。晶体管T6的栅极与第六栅极驱动电路连接。所述第六栅极驱动电路可以产生栅极控制信号G2。通过所述栅极控制信号 G2控制晶体管T6的导通和关断。所述第六栅极驱动电路例如可以是图2中的栅极驱动电路212或栅极驱动电路213,或者可以是图2中未画出的另外的驱动栅极电路。The second electrode of the transistor T6 is connected to the display driver chip. The display driver chip may input the initialization control signal vinit3 from the second electrode of the transistor T6 to the pixel circuit. The display driver chip may be, for example, the display driver chip 221 in FIG. 2 . The initialization control signal vinit3 can be an input voltage. The gate of the transistor T6 is connected to the sixth gate drive circuit. The sixth gate driving circuit may generate the gate control signal G2. control signal via the gate G2 controls the on and off of transistor T6. The sixth gate driving circuit may be, for example, the gate driving circuit 212 or the gate driving circuit 213 in FIG. 2 , or may be another driving gate circuit not shown in FIG. 2 .
在本申请实施例的一些实现方式中,所述第六栅极驱动电路可以是显示装置中已有的栅极驱动电路,而无需额外增加一组栅极驱动电路来控制所述晶体管T6。示例性的,基于前面图3中相关的描述可知,显示装置中的栅极驱动电路可以是按行来排列设置。假设图6中晶体管T5的栅极控制信号G1是由某一组栅极驱动电路的第n行栅极驱动电路来提供,晶体管T6的栅极控制信号G2可以是由所述某一组栅极驱动电路的第n-x行栅极驱动电路来提供。所述n和x的取值可以是大于1的整数,n大于x。由于栅极驱动电路设置在显示装置的显示区外边缘区域,重复利用上述第六栅极驱动电路可以使得无需新增新的栅极驱动电路,从而可以减少显示区外边缘区域的面积,以减少显示屏幕的宽度。In some implementations of the embodiments of the present application, the sixth gate driving circuit may be an existing gate driving circuit in the display device, without adding an additional set of gate driving circuits to control the transistor T6. For example, based on the relevant description in FIG. 3 , it can be known that the gate driving circuits in the display device may be arranged in rows. Assume that the gate control signal G1 of the transistor T5 in Figure 6 is provided by the n-th row gate driving circuit of a certain group of gate driving circuits, and the gate control signal G2 of the transistor T6 can be provided by the certain group of gate driving circuits. The gate drive circuit for the n-xth row of the drive circuit is provided. The values of n and x may be integers greater than 1, and n is greater than x. Since the gate drive circuit is disposed in the outer edge area of the display area of the display device, reusing the above-mentioned sixth gate drive circuit eliminates the need to add a new gate drive circuit, thereby reducing the area of the outer edge area of the display area. Displays the width of the screen.
本申请实施例中,图6所示像素电路中新增的晶体管T6用于初始化节点N3处的电压。在初始化阶段,可以通过栅极控制信号scan3控制晶体管T1导通,通过栅极控制信号scan2控制晶体管T3导通,通过栅极控制信号scan1控制晶体管T4导通,通过栅极控制信号G2控制晶体管T6导通,晶体管T2、T5关断。从而使得节点N4处的电压初始化为vinit1,即使得OLED的阳极复位。并且,使得节点N2处的电压可以初始化为vinit2,使得节点N3处的电压初始化为vinit3。由于晶体管T1导通,则使得节点N1处的电压与节点N3处的电压相等。完成初始化之后,关断晶体管T6,使得进入电压补偿阶段。所述第六晶体管在所述像素电路的电压补偿阶段之后的数据写入阶段和发光阶段均处于关断状态。In this embodiment of the present application, the newly added transistor T6 in the pixel circuit shown in Figure 6 is used to initialize the voltage at the node N3. In the initialization phase, the gate control signal scan3 can be used to control the transistor T1 to be turned on, the gate control signal scan2 can be used to control the transistor T3 to be turned on, the gate control signal scan1 can be used to control the transistor T4 to be turned on, and the gate control signal G2 can be used to control the transistor T6 is turned on, and transistors T2 and T5 are turned off. As a result, the voltage at node N4 is initialized to vinit1, that is, the anode of the OLED is reset. Moreover, the voltage at node N2 can be initialized to vinit2, and the voltage at node N3 can be initialized to vinit3. Since the transistor T1 is turned on, the voltage at the node N1 is equal to the voltage at the node N3. After the initialization is completed, the transistor T6 is turned off, causing the voltage compensation phase to be entered. The sixth transistor is in an off state during both the data writing phase and the light emitting phase after the voltage compensation phase of the pixel circuit.
在电压补偿阶段,此时,节点N3的电压vinit3,可以设置所述电压vinit3大于电压vinit1,可以在晶体管DT上产生电流。随着电流的流动,节点N3处的电压慢慢下降,即晶体管DT源极的电压慢慢下降。晶体管DT栅极的电压即节点N2处的电压已经初始化为vinit2。当晶体管DT栅极的电压和晶体管DT源极的电压之间的电压差Vgs=Vth时,晶体管DT上的电流截断。Vth为所述晶体管DT的阈值电压。则此时,节点N3处的电压为vinit2-Vth。由于晶体管T1导通,则使得节点N1处的电压与节点N3处的电压相等。则节点N1处的电压为vinit2-VthIn the voltage compensation stage, at this time, the voltage vinit3 of the node N3 can be set to be greater than the voltage vinit1, and a current can be generated in the transistor DT. As the current flows, the voltage at node N3 slowly decreases, that is, the voltage at the source of transistor DT slowly decreases. The voltage at the gate of transistor DT, that is, the voltage at node N2, has been initialized to vinit2. When the voltage difference between the voltage at the gate of the transistor DT and the voltage at the source of the transistor DT is V gs =V th , the current on the transistor DT is cut off. Vth is the threshold voltage of the transistor DT. At this time, the voltage at node N3 is vinit2-V th . Since the transistor T1 is turned on, the voltage at the node N1 is equal to the voltage at the node N3. Then the voltage at node N1 is vinit2-V th .
图6所示的像素电路完成上述初始化和电压补偿后,进入数据写入和发光阶段,所述两个阶段的控制逻辑和实现可以参见上述图4所示像素电路中对应的描述,此处不赘述。After the pixel circuit shown in Figure 6 completes the above-mentioned initialization and voltage compensation, it enters the data writing and lighting stages. For the control logic and implementation of the two stages, please refer to the corresponding description of the pixel circuit shown in Figure 4 above, which will not be discussed here. Repeat.
在本申请实施例的一些实施方式中,上述驱动OLED发光之后,还可以通过晶体管T2的栅极控制信号和晶体管T3的栅极控制信号的脉冲宽度调制(pulse width modulation,PWM)来调节OLED的发光亮度。In some implementations of the embodiments of this application, after the OLED is driven to emit light, the OLED can also be adjusted through pulse width modulation (PWM) of the gate control signal of the transistor T2 and the gate control signal of the transistor T3. Luminous brightness.
示例性地,参见图7给出了上述图6所示像素电路中初始化阶段、电压补偿阶段、数据写入阶段、发光阶段和调光阶段中各个晶体管的控制信号的时序示意图。图7所示的时序示意图相比于上述图5增加了晶体管T6的栅极控制信号G2的时序。所述栅极控制信号G2只有在初始化阶段处于高电平,使得晶体管T6导通,以完成节点N3处的初始化。初始化完成之后,所述栅极控制信号G2一直处于低电平,使得晶体管T6关断。图7中栅极控制信号G1、Emit、scan1、scan3和scan2的描述可以参见上述图5的相关描述,此处不赘述。需要说明的是,图7所示的时序图仅为一个示例,不构成对本申请实施例的限制。For example, referring to FIG. 7 , a timing diagram of the control signals of each transistor in the initialization phase, voltage compensation phase, data writing phase, light emitting phase, and dimming phase in the pixel circuit shown in FIG. 6 is shown. Compared with the above-mentioned FIG. 5 , the timing diagram shown in FIG. 7 adds the timing of the gate control signal G2 of the transistor T6 . The gate control signal G2 is at a high level only during the initialization stage, causing the transistor T6 to be turned on to complete the initialization at the node N3. After the initialization is completed, the gate control signal G2 is always at a low level, causing the transistor T6 to turn off. The description of the gate control signals G1, Emit, scan1, scan3 and scan2 in Figure 7 can be found in the relevant description of Figure 5 above, and will not be described again here. It should be noted that the timing diagram shown in FIG. 7 is only an example and does not constitute a limitation on the embodiments of the present application.
上述图6所示像素电路相比于上述图4所示像素电路新增的晶体管T6,可以用于在初始化阶段实现节点N3处的电压初始化,减少了前一帧信号在节点N3处的残留电荷对电压补偿阶段的影响,优化了电压补偿的效果,进一步改善了OLED显示闪烁的问题,优化了OLED的显示效果。The pixel circuit shown in Figure 6 above has a new transistor T6 compared to the pixel circuit shown in Figure 4 above. It can be used to initialize the voltage at node N3 during the initialization phase, reducing the residual charge of the previous frame signal at node N3. The effect of the voltage compensation stage is optimized, which further improves the problem of OLED display flicker and optimizes the OLED display effect.
在上述图6所示的像素电路中,电容C1和电容C2的漏电通路中的晶体管T1、T4和T5 都使用的是IGZO TFT。IGZO TFT的导通电流虽然没有LTPS TFT的导通电流大,但IGZO TFT的导通电流适中,能够满足电路正常的工作需求。虽然LTPS TFT的导通电流大,但是其漏电流也大。像素电路中的晶体管采用漏电流大的LTPS TFT,在高频状态下工作时没有问题,但是当在低频状态下工作时,由于LTPS TFT的漏电流较大,会导致电路的电压慢慢下降,导致OLED在不同时间的发光亮度不同,即出现闪烁的问题。而IGZO TFT的漏电流较小,在低频工作状态下,可以改善电路中电压下降的问题,进而改善OLED显示闪烁的问题。因此,在上述图6所示的像素电路中,电容C1和电容C2的漏电通路中的晶体管T1、T4和T5使用IGZO TFT,实现低频工作状态下仍能保持较低的漏电流,使得电容C1和电容C2上的存储电荷能够高效保持,即能够保持电路中的电压,进而改善低频工作状态下OLED的闪烁问题。与OLED连接的晶体管T3也采用的是IGZO TFT,从而减少了晶体管T3的漏电。通过这样的设计,可以使得整个像素电路的漏电流整体减少,从而改善了所述像素电路在低频状态下工作时OLED的闪烁问题。并且,图6所示的像素电路也可以在高频状态下工作,并且仍能保持很好的工作性能。即本申请实施例提供的图6所示的像素电路,既可以在高频状态下工作,又可以在低频状态下工作,且改善了低频状态下工作时OLED的闪烁问题,使得OLED的显示效果更好。In the pixel circuit shown in Figure 6 above, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 All use IGZO TFT. Although the on-current of IGZO TFT is not as large as that of LTPS TFT, the on-current of IGZO TFT is moderate and can meet the normal working requirements of the circuit. Although the on-current of LTPS TFT is large, its leakage current is also large. The transistors in the pixel circuit use LTPS TFTs with large leakage current. There is no problem when working in a high-frequency state. However, when working in a low-frequency state, due to the large leakage current of the LTPS TFT, the voltage of the circuit will slowly decrease. As a result, the OLED emits different brightness at different times, causing the problem of flickering. The leakage current of IGZO TFT is small. Under low-frequency operation, it can improve the problem of voltage drop in the circuit, thereby improving the problem of OLED display flicker. Therefore, in the pixel circuit shown in Figure 6 above, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 use IGZO TFT to achieve low leakage current under low-frequency operation, so that the capacitor C1 The stored charge on capacitor C2 can be maintained efficiently, that is, the voltage in the circuit can be maintained, thereby improving the flicker problem of OLED under low-frequency operation. The transistor T3 connected to the OLED also uses IGZO TFT, thereby reducing the leakage of the transistor T3. Through such a design, the leakage current of the entire pixel circuit can be reduced as a whole, thereby improving the flicker problem of the OLED when the pixel circuit operates in a low-frequency state. Moreover, the pixel circuit shown in Figure 6 can also work in a high-frequency state and still maintain good working performance. That is to say, the pixel circuit shown in Figure 6 provided by the embodiment of the present application can work in both a high-frequency state and a low-frequency state, and improves the flicker problem of OLED when operating in a low-frequency state, making the OLED display effect better. better.
在像素电路中,如果电压补偿时间不足,则补偿电压后和目标电压不匹配,使得补偿效果不好,直接影响OLED显示效果。现有的方案中电压补偿和数据写入的时间强耦合,无法灵活调节电压补偿的时间。而在上述图6所示的像素电路中,电压补偿阶段和数据写入阶段是分开控制实现的。因此,可以灵活调节电压补偿的时间,例如可以通过调节晶体管T3的栅极控制信号scan2、晶体管T4的栅极控制信号scan1和晶体管T5的栅极控制信号G1在补偿阶段的上升沿或下降沿的时间来调节电压补偿的时间。所述上升沿或下降沿的时间可以由显示驱动芯片提供时钟信号来控制。即图6所示像素电路可以通过控制电压补偿的时间来改善OLED的显示效果。对于不同的显示屏可以对应调节电压补偿的时间来达到较优的显示效果,实现了补偿时间可以依据显示屏的工艺差异灵活调节,增加了像素电路应用的灵活性。In the pixel circuit, if the voltage compensation time is insufficient, the compensated voltage will not match the target voltage, causing the compensation effect to be poor and directly affecting the OLED display effect. In the existing solution, voltage compensation and data writing time are strongly coupled, and the voltage compensation time cannot be flexibly adjusted. In the pixel circuit shown in Figure 6 above, the voltage compensation stage and the data writing stage are controlled separately. Therefore, the time of voltage compensation can be flexibly adjusted, for example, by adjusting the rising or falling edges of the gate control signal scan2 of the transistor T3, the gate control signal scan1 of the transistor T4, and the gate control signal G1 of the transistor T5 during the compensation phase. time to adjust the voltage compensation time. The time of the rising edge or falling edge can be controlled by a clock signal provided by the display driver chip. That is, the pixel circuit shown in Figure 6 can improve the display effect of OLED by controlling the time of voltage compensation. For different display screens, the voltage compensation time can be adjusted accordingly to achieve a better display effect. The compensation time can be flexibly adjusted according to the process differences of the display screen, which increases the flexibility of pixel circuit application.
本申请实施例提供的像素电路还可以示例性地参见图8。图8所示的像素电路相比于图6所示的像素电路增加了一个电容C3。The pixel circuit provided by the embodiment of the present application can also be exemplified by reference to FIG. 8 . Compared with the pixel circuit shown in FIG. 6 , the pixel circuit shown in FIG. 8 adds a capacitor C3.
晶体管T1的第一电极、晶体管T5的第一电极、电容C1的第一端和电容C2的第一端均与所述电容C3的第一端连接。晶体管T1的第二电极、晶体管T2的第一电极、晶体管T6的第一电极、晶体管DT的第一电极均与所述电容C3的第二端连接。图8中用“①”表示电容C3的第一端,用“②”表示电容C3的第二端。The first electrode of the transistor T1, the first electrode of the transistor T5, the first terminal of the capacitor C1 and the first terminal of the capacitor C2 are all connected to the first terminal of the capacitor C3. The second electrode of the transistor T1, the first electrode of the transistor T2, the first electrode of the transistor T6, and the first electrode of the transistor DT are all connected to the second end of the capacitor C3. In Figure 8, “①” is used to indicate the first end of the capacitor C3, and “②” is used to indicate the second end of the capacitor C3.
具体实现中,上述图8所示像素电路中的初始化阶段、电压补偿阶段、数据写入阶段、发光阶段以及调光阶段的控制逻辑和具体实现可以参见上述图6所示像素电路的对应描述,此处不赘述。In the specific implementation, the control logic and specific implementation of the initialization stage, voltage compensation stage, data writing stage, light emitting stage and dimming stage in the pixel circuit shown in Figure 8 can be found in the corresponding description of the pixel circuit shown in Figure 6 above. No further details will be given here.
在本申请实施例的一些实施方式中,上述图8所示的像素电路中,晶体管T1的栅极控制信号scan3和晶体管T4的栅极控制信号scan1可以是来自相同的栅极驱动电路中的同一路控制信号。为了便于描述,将所述同一路控制信号表示为scan’。同理,由于栅极驱动电路设置在显示装置的显示区外边缘区域,重复利用栅极驱动电路可以减少驱动电路的数量,从而可以减少显示区外边缘区域的面积,以减少显示屏幕的宽度。In some implementations of the embodiment of the present application, in the pixel circuit shown in FIG. 8 above, the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 may be from the same gate drive circuit. road control signal. For convenience of description, the same control signal is denoted as scan’. Similarly, since the gate drive circuit is arranged in the outer edge area of the display area of the display device, reusing the gate drive circuit can reduce the number of drive circuits, thereby reducing the area of the outer edge area of the display area, thereby reducing the width of the display screen.
在本申请实施例的一些实施方式中,上述晶体管T1和晶体管T4均为高电平导通,低电平关断。或者,晶体管T1和晶体管T4均为低电平导通,高电平关断。由于所述体管T1的 栅极控制信号scan3和晶体管T4的栅极控制信号scan1为同一路控制信号,所述晶体管T1和晶体管T4同时导通,或者同时关断。在上述图8所示的像素电路的数据写入阶段,可以只导通晶体管T5,其它晶体管均关断,即晶体管T1随着晶体管T4一起关断。In some implementations of the embodiments of this application, the above-mentioned transistor T1 and transistor T4 are both turned on at a high level and turned off at a low level. Alternatively, the transistor T1 and the transistor T4 are both turned on at a low level and turned off at a high level. Since the body tube T1 The gate control signal scan3 and the gate control signal scan1 of the transistor T4 are the same control signal, and the transistor T1 and the transistor T4 are turned on or off at the same time. During the data writing stage of the pixel circuit shown in FIG. 8 , only the transistor T5 can be turned on, and the other transistors can be turned off, that is, the transistor T1 is turned off together with the transistor T4.
另在本申请实施例的一些实施方式中,上述晶体管T1为高电平导通,低电平关断;而晶体管T4为低电平导通,高电平关断。或者,晶体管T1为低电平导通,高电平关断;而晶体管T4为高电平导通,低电平关断。由于所述体管T1的栅极控制信号scan3和晶体管T4的栅极控制信号scan1为同一路控制信号,所述晶体管T1和晶体管T4在同一时间一个处于导通状态,另一个处于关断状态。在上述图8所示的像素电路的数据写入阶段,可以控制晶体管T1处于导通状态,而同时晶体管T4处于关断状态。再控制晶体管T5导通,余下的晶体管均关断,以此来完成数据的写入。In addition, in some implementations of the embodiments of this application, the above-mentioned transistor T1 is turned on at a high level and turned off at a low level; and the transistor T4 is turned on at a low level and turned off at a high level. Alternatively, the transistor T1 is turned on at a low level and turned off at a high level; while the transistor T4 is turned on at a high level and turned off at a low level. Since the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 are the same control signal, one of the transistor T1 and the transistor T4 is in an on state and the other is in an off state at the same time. During the data writing stage of the pixel circuit shown in FIG. 8 , the transistor T1 can be controlled to be in the on state, while the transistor T4 can be controlled to be in the off state. Then the control transistor T5 is turned on, and the remaining transistors are turned off, thereby completing the writing of data.
上述体管T1的栅极控制信号scan3和晶体管T4的栅极控制信号scan1为同一路控制信号的实现方式下,图8所示像素电路中初始化阶段、电压补偿阶段、数据写入阶段、发光阶段和调光阶段中各个晶体管的控制信号的时序示意图可以参见图9。图9所示各个阶段的描述可以示例性参见上述图7,此处不赘述。需要说明的是,图9所示的时序图仅为一个示例,不构成对本申请实施例的限制。When the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 are implemented as the same control signal, the initialization stage, voltage compensation stage, data writing stage, and light emitting stage of the pixel circuit shown in Figure 8 The timing diagram of the control signals of each transistor in the dimming stage can be seen in Figure 9. The description of each stage shown in Figure 9 can be exemplarily referred to the above-mentioned Figure 7 and will not be described again here. It should be noted that the timing diagram shown in FIG. 9 is only an example and does not constitute a limitation on the embodiments of the present application.
关于上述图8所示的像素电路相比于图6所示的像素电路新增的电容C3,可以在发光阶段利用电容C3的电压差来保持节点N3处的电压。在发光阶段,当晶体管T2导通后,晶体管DT的栅极电压相对于源极电压的变化减小,即Vgs减小。而电容C3能起到稳压作用,使得Vgs保持稳定,减少Vgs的变化波动,相当于起到了电压补偿的效果,使得整个像素电路电压补偿的效果更显著。即相比于上述图6所示的像素电路,图8所示像素电路的电压补偿效果更好。为了便于理解,可以示例性地参见图10。Regarding the above-mentioned pixel circuit shown in FIG. 8 , compared with the pixel circuit shown in FIG. 6 , the newly added capacitor C3 can utilize the voltage difference of the capacitor C3 to maintain the voltage at the node N3 during the light emitting stage. In the light-emitting phase, when the transistor T2 is turned on, the change in the gate voltage of the transistor DT relative to the source voltage decreases, that is, Vgs decreases. The capacitor C3 can stabilize the voltage, keep Vgs stable and reduce the fluctuation of Vgs, which is equivalent to the effect of voltage compensation, making the voltage compensation effect of the entire pixel circuit more significant. That is, compared with the pixel circuit shown in FIG. 6 mentioned above, the voltage compensation effect of the pixel circuit shown in FIG. 8 is better. For ease of understanding, reference may be made to FIG. 10 as an example.
图10示例性示出了图6和图8所示像素电路的电压补偿效果的仿真结果示意图。在图10中,(a)表示的是图6所示的像素电路的仿真结果示意图,(b)表示的是图8所示的像素电路的仿真结果示意图。纵轴表示电压补偿效果,横轴表示数据电压Vdata大小。图10中图标的“Typ”表示驱动TFT即上述晶体管DT的典型阈值电压Vth,可以看到典型电压的补偿效果为100%。以图10中图标的“Typ-0.5”为例,图10中图标的“Typ-0.5”表示驱动TFT的Vth电压比典型值小0.5V。在具体制作的驱动TFT中,由于制作工艺的影响会使得驱动TFT的特性发生波动,这会导致Vth电压发生变化,即偏离典型的阈值电压。Vth电压发生变化后,如果仍按按照典型的阈值电压的情况来进行电压补偿,补偿效果会在一定程度上偏离理想的100%的补偿效果。如补偿效果偏离100%则会影响显示效果。而上述图8所示的像素电路通过电容C3降低Vgs受寄生电容的耦合影响,在一定程度上可以缓解因制作工艺导致的Vth电压变化带来的影响。因此,从补偿效果看,图8所示的像素电路的补偿效果偏差幅度较图6所示的像素电路更小,表示补偿效果有进一步的提升。FIG. 10 exemplarily shows a schematic diagram of the simulation results of the voltage compensation effect of the pixel circuit shown in FIG. 6 and FIG. 8 . In FIG. 10 , (a) shows a schematic diagram of the simulation results of the pixel circuit shown in FIG. 6 , and (b) shows a schematic diagram of the simulation results of the pixel circuit shown in FIG. 8 . The vertical axis represents the voltage compensation effect, and the horizontal axis represents the data voltage V data . “Typ” in the icon in Figure 10 represents the typical threshold voltage V th of the driving TFT, that is, the above-mentioned transistor DT. It can be seen that the compensation effect of the typical voltage is 100%. Take the "Typ-0.5" in the icon in Figure 10 as an example. The "Typ-0.5" in the icon in Figure 10 indicates that the V th voltage driving the TFT is 0.5V smaller than the typical value. In a specifically manufactured driving TFT, the characteristics of the driving TFT will fluctuate due to the influence of the manufacturing process, which will cause the V th voltage to change, that is, deviate from the typical threshold voltage. After the V th voltage changes, if the voltage compensation is still performed according to the typical threshold voltage, the compensation effect will deviate from the ideal 100% compensation effect to a certain extent. If the compensation effect deviates from 100%, the display effect will be affected. The pixel circuit shown in Figure 8 above uses capacitor C3 to reduce V gs and is affected by the coupling of parasitic capacitance, which can alleviate the impact of V th voltage changes caused by the manufacturing process to a certain extent. Therefore, from the perspective of compensation effect, the deviation amplitude of the compensation effect of the pixel circuit shown in Figure 8 is smaller than that of the pixel circuit shown in Figure 6, indicating that the compensation effect has been further improved.
在上述图8所示的像素电路中,电容C1和电容C2的漏电通路中的晶体管T1、T4和T5都使用的是IGZO TFT。IGZO TFT的导通电流虽然没有LTPS TFT的导通电流大,但IGZO TFT的导通电流适中,能够满足电路正常的工作需求。虽然LTPS TFT的导通电流大,但是其漏电流也大。像素电路中的晶体管采用漏电流大的LTPS TFT,在高频状态下工作时没有问题,但是当在低频状态下工作时,由于LTPS TFT的漏电流较大,会导致电路的电压慢慢下降,导致OLED在不同时间的发光亮度不同,即出现闪烁的问题。而IGZO TFT的漏电流较小,在低频工作状态下,可以改善电路中电压下降的问题,进而改善OLED显示闪烁的问题。因此,在上述图8所示的像素电路中,电容C1和电容C2的漏电通路中的晶体管T1、T4和T5 使用IGZO TFT,实现低频工作状态下仍能保持较低的漏电流,使得电容C1和电容C2上的存储电荷能够高效保持,即能够保持电路中的电压,进而改善低频工作状态下OLED的闪烁问题。与OLED连接的晶体管T3也采用的是IGZO TFT,从而减少了晶体管T3的漏电。通过这样的设计,可以使得整个像素电路的漏电流整体减少,从而改善了所述像素电路在低频状态下工作时OLED的闪烁问题。并且,图8所示的像素电路也可以在高频状态下工作,并且仍能保持很好的工作性能。即本申请实施例提供的图8所示的像素电路,既可以在高频状态下工作,又可以在低频状态下工作,且改善了低频状态下工作时OLED的闪烁问题,使得OLED的显示效果更好。In the pixel circuit shown in Figure 8 above, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 all use IGZO TFTs. Although the on-current of IGZO TFT is not as large as that of LTPS TFT, the on-current of IGZO TFT is moderate and can meet the normal working requirements of the circuit. Although the on-current of LTPS TFT is large, its leakage current is also large. The transistors in the pixel circuit use LTPS TFTs with large leakage current. There is no problem when working in a high-frequency state. However, when working in a low-frequency state, due to the large leakage current of the LTPS TFT, the voltage of the circuit will slowly decrease. As a result, the OLED emits different brightness at different times, causing the problem of flickering. The leakage current of IGZO TFT is small. Under low-frequency operation, it can improve the problem of voltage drop in the circuit, thereby improving the problem of OLED display flicker. Therefore, in the above-mentioned pixel circuit shown in Figure 8, the transistors T1, T4 and T5 in the leakage path of the capacitor C1 and the capacitor C2 Using IGZO TFT, low leakage current can be maintained under low-frequency operation, so that the stored charge on capacitor C1 and capacitor C2 can be efficiently maintained, that is, the voltage in the circuit can be maintained, thereby improving the flicker problem of OLED under low-frequency operation. . The transistor T3 connected to the OLED also uses IGZO TFT, thereby reducing the leakage of the transistor T3. Through such a design, the leakage current of the entire pixel circuit can be reduced as a whole, thereby improving the flicker problem of the OLED when the pixel circuit operates in a low-frequency state. Moreover, the pixel circuit shown in Figure 8 can also operate in a high-frequency state and still maintain good operating performance. That is to say, the pixel circuit shown in Figure 8 provided by the embodiment of the present application can work in both a high-frequency state and a low-frequency state, and improves the flickering problem of OLED when operating in a low-frequency state, making the OLED display effect better. better.
在像素电路中,如果电压补偿时间不足,则补偿电压后和目标电压不匹配,使得补偿效果不好,直接影响OLED显示效果。现有的方案中电压补偿和数据写入的时间强耦合,无法灵活调节电压补偿的时间。而在上述图8所示的像素电路中,电压补偿阶段和数据写入阶段是分开控制实现的。因此,可以灵活调节电压补偿的时间,例如可以通过调节晶体管T3的栅极控制信号scan2、晶体管T4的栅极控制信号scan1和晶体管T5的栅极控制信号G1在补偿阶段的上升沿或下降沿的时间来调节电压补偿的时间。所述上升沿或下降沿的时间可以由显示驱动芯片提供时钟信号来控制。即图8所示像素电路可以通过控制电压补偿的时间来改善OLED的显示效果。对于不同的显示屏可以对应调节电压补偿的时间来达到较优的显示效果,实现了补偿时间可以依据显示屏的工艺差异灵活调节,增加了像素电路应用的灵活性。In the pixel circuit, if the voltage compensation time is insufficient, the compensated voltage will not match the target voltage, causing the compensation effect to be poor and directly affecting the OLED display effect. In the existing solution, voltage compensation and data writing time are strongly coupled, and the voltage compensation time cannot be flexibly adjusted. In the pixel circuit shown in Figure 8 above, the voltage compensation stage and the data writing stage are controlled separately. Therefore, the time of voltage compensation can be flexibly adjusted, for example, by adjusting the rising edge or falling edge of the gate control signal scan2 of the transistor T3, the gate control signal scan1 of the transistor T4, and the gate control signal G1 of the transistor T5 during the compensation phase. time to adjust the voltage compensation time. The time of the rising edge or falling edge can be controlled by a clock signal provided by the display driver chip. That is, the pixel circuit shown in Figure 8 can improve the display effect of OLED by controlling the time of voltage compensation. For different display screens, the voltage compensation time can be adjusted accordingly to achieve a better display effect. The compensation time can be flexibly adjusted according to the process differences of the display screen, which increases the flexibility of pixel circuit application.
本申请实施例提供的像素电路还可以示例性地参见图11。图11所示的像素电路相比于图6所示的像素电路,设置了晶体管T1的栅极和晶体管T4的栅极连接到同一组栅极控制电路的同一个信号输出端上。即晶体管T1的栅极控制信号和晶体管T4的栅极控制信号是同一路栅极控制信号,所述同一路栅极控制信号可以用scan4表示。The pixel circuit provided by the embodiment of the present application can also be exemplified by reference to FIG. 11 . Compared with the pixel circuit shown in FIG. 6 , the pixel circuit shown in FIG. 11 is configured such that the gate electrode of the transistor T1 and the gate electrode of the transistor T4 are connected to the same signal output terminal of the same group of gate control circuits. That is, the gate control signal of the transistor T1 and the gate control signal of the transistor T4 are the same gate control signal, and the same gate control signal can be represented by scan4.
图11中相比于图6所示的像素电路,还设置了可以通过栅极扫描信号scan5来控制晶体管T6的导通和关断。所述栅极扫描信号scan5可以是已有的栅极驱动电路提供,即所述栅极扫描信号scan5可以是与另一个晶体管(图11中未画出)的栅极控制信号为同一路栅极控制信号。Compared with the pixel circuit shown in FIG. 6 , in FIG. 11 , it is also provided that the turn-on and turn-off of the transistor T6 can be controlled by the gate scanning signal scan5 . The gate scanning signal scan5 may be provided by an existing gate drive circuit, that is, the gate scanning signal scan5 may be the same gate as the gate control signal of another transistor (not shown in Figure 11). control signal.
上述的设置是由于栅极驱动电路设置在显示装置的显示区外边缘区域,重复利用栅极驱动电路可以减少驱动电路的数量,从而可以减少显示区外边缘区域的面积,以减少显示屏幕的宽度。The above arrangement is because the gate drive circuit is arranged in the outer edge area of the display area of the display device. Reusing the gate drive circuit can reduce the number of drive circuits, thereby reducing the area of the outer edge area of the display area, thereby reducing the width of the display screen. .
上述图11所示像素电路中的初始化阶段、电压补偿阶段、数据写入阶段、发光阶段以及调光阶段的控制逻辑和具体实现可以参见上述图6所示像素电路的对应描述,此处不赘述。The control logic and specific implementation of the initialization stage, voltage compensation stage, data writing stage, light emitting stage and dimming stage in the pixel circuit shown in Figure 11 above can be found in the corresponding description of the pixel circuit shown in Figure 6 above, and will not be described again here. .
图11所示像素电路中初始化阶段、电压补偿阶段、数据写入阶段、发光阶段和调光阶段中各个晶体管的控制信号的时序示意图可以参见图12。需要说明的是,图12所示的时序图仅为一个示例,不构成对本申请实施例的限制。The timing diagram of the control signals of each transistor in the initialization stage, voltage compensation stage, data writing stage, light emitting stage and dimming stage in the pixel circuit shown in Figure 11 can be seen in Figure 12. It should be noted that the timing diagram shown in FIG. 12 is only an example and does not constitute a limitation on the embodiments of the present application.
本申请实施例中,在上述图6和图8所示的像素电路中,晶体管T5的栅极控制信号G1和晶体管T6的栅极控制信号G2可以由同一组栅极驱动电路(简称为第一组栅极驱动电路)来提供。晶体管T1的栅极控制信号scan3和晶体管T4的栅极控制信号scan1可以由同一组栅极驱动电路(简称为第二组栅极驱动电路)来提供。示例性地,所述栅极控制信号scan3和所述栅极控制信号scan1可以是所述第二组栅极驱动电路的同一路控制信号。晶体管T3的栅极控制信号scan2可以由第三组栅极驱动电路来提供。晶体管T2的栅极控制信号Emit可以由第 四组栅极驱动电路来提供。所述第一组栅极驱动电路、第二组栅极驱动电路、第三组栅极驱动电路和第四组栅极驱动电路可以各不相同。In the embodiment of the present application, in the above-mentioned pixel circuits shown in FIGS. 6 and 8 , the gate control signal G1 of the transistor T5 and the gate control signal G2 of the transistor T6 may be driven by the same group of gate driving circuits (referred to as the first gate driving circuit for short). set gate drive circuit) to provide. The gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 may be provided by the same group of gate driving circuits (referred to as the second group of gate driving circuits for short). For example, the gate control signal scan3 and the gate control signal scan1 may be the same control signal of the second group of gate driving circuits. The gate control signal scan2 of the transistor T3 may be provided by a third group of gate driving circuits. The gate control signal Emit of the transistor T2 can be determined by the Four sets of gate drive circuits are provided. The first group of gate driving circuits, the second group of gate driving circuits, the third group of gate driving circuits and the fourth group of gate driving circuits may be different from each other.
在本申请实施例的一些实施方式中,在上述图6和图8所示的像素电路中,晶体管T5的栅极控制信号G1和晶体管T6的栅极控制信号G2可以由上述第一组栅极驱动电路来提供。示例性地,所述栅极控制信号G1和栅极控制信号G2是由所述第一组栅极驱动电路中不同行的栅极驱动电路提供。例如,晶体管T5的栅极控制信号G1是由所述第一组栅极驱动电路的第n行栅极驱动电路来提供,所述晶体管T6的栅极控制信号G2可以是由所述某一组栅极驱动电路的第n-x行栅极驱动电路来提供。晶体管T1的栅极控制信号scan3可以由上述第二组栅极驱动电路来提供。晶体管T3的栅极控制信号scan2可以由上述第三组栅极驱动电路来提供。晶体管T2的栅极控制信号Emit可以由上述第四组栅极驱动电路来提供。晶体管T4的栅极控制信号scan1可以由第五组栅极驱动电路来提供。所述第一组栅极驱动电路、第二组栅极驱动电路、第三组栅极驱动电路、第四组栅极驱动电路和第五组栅极驱动电路可以各不相同。In some implementations of the embodiments of the present application, in the above-mentioned pixel circuits shown in FIGS. 6 and 8 , the gate control signal G1 of the transistor T5 and the gate control signal G2 of the transistor T6 can be generated by the above-mentioned first group of gates. driver circuit is provided. Exemplarily, the gate control signal G1 and the gate control signal G2 are provided by gate drive circuits in different rows of the first group of gate drive circuits. For example, the gate control signal G1 of the transistor T5 is provided by the n-th row gate driving circuit of the first group of gate driving circuits, and the gate control signal G2 of the transistor T6 may be provided by the certain group of gate driving circuits. The gate drive circuit of the n-xth row is provided by the gate drive circuit. The gate control signal scan3 of the transistor T1 may be provided by the above-mentioned second group of gate driving circuits. The gate control signal scan2 of the transistor T3 may be provided by the above-mentioned third group of gate driving circuits. The gate control signal Emit of the transistor T2 may be provided by the above-mentioned fourth group of gate driving circuits. The gate control signal scan1 of the transistor T4 may be provided by the fifth group of gate driving circuits. The first group of gate driving circuits, the second group of gate driving circuits, the third group of gate driving circuits, the fourth group of gate driving circuits and the fifth group of gate driving circuits may be different from each other.
在本申请实施例的一些实施方式中,在上述图6和图8所示的像素电路中,晶体管T5的栅极控制信号G1可以由上述第一组栅极驱动电路来提供。晶体管T1的栅极控制信号scan3和晶体管T4的栅极控制信号scan1可以由上述第二组栅极驱动电路来提供。示例性地,所述栅极控制信号scan3和所述栅极控制信号scan1可以是所述第二组栅极驱动电路的同一路控制信号。晶体管T3的栅极控制信号scan2可以由上述第三组栅极驱动电路来提供。晶体管T2的栅极控制信号Emit可以由上述第四组栅极驱动电路来提供。晶体管T6的栅极控制信号G2可以由上述第五组栅极驱动电路来提供。In some implementations of the embodiments of the present application, in the above-mentioned pixel circuits shown in FIG. 6 and FIG. 8 , the gate control signal G1 of the transistor T5 may be provided by the above-mentioned first group of gate driving circuits. The gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 may be provided by the above-mentioned second group of gate driving circuits. For example, the gate control signal scan3 and the gate control signal scan1 may be the same control signal of the second group of gate driving circuits. The gate control signal scan2 of the transistor T3 may be provided by the above-mentioned third group of gate driving circuits. The gate control signal Emit of the transistor T2 may be provided by the above-mentioned fourth group of gate driving circuits. The gate control signal G2 of the transistor T6 may be provided by the fifth group of gate driving circuits mentioned above.
在本申请实施例的一些实施方式中,上述图4所示的像素电路中,晶体管T1的栅极控制信号scan3和晶体管T4的栅极控制信号scan1可以由上述第二组栅极驱动电路来提供。示例性地,所述栅极控制信号scan3和所述栅极控制信号scan1可以是所述第二组栅极驱动电路的同一路控制信号。In some implementations of the embodiment of the present application, in the pixel circuit shown in FIG. 4 above, the gate control signal scan3 of the transistor T1 and the gate control signal scan1 of the transistor T4 can be provided by the second group of gate drive circuits. . For example, the gate control signal scan3 and the gate control signal scan1 may be the same control signal of the second group of gate driving circuits.
上述实施例中,两个晶体管的栅极控制信号由一组栅极驱动电路来提供,可以减少栅极驱动电路的数量,从而可以减少显示区外边缘区域的面积,以减少显示屏幕的宽度。可选的,在具体实现中也可以是每个晶体管都有单独的栅极驱动电路控制,本申请实施例对此不做限制。In the above embodiment, the gate control signals of the two transistors are provided by a set of gate drive circuits, which can reduce the number of gate drive circuits, thereby reducing the area of the outer edge area of the display area and reducing the width of the display screen. Optionally, in specific implementation, each transistor may be controlled by an independent gate drive circuit, which is not limited in the embodiments of the present application.
本申请中术语“第一”“第二”等字样用于对作用和功能基本相同的相同项或相似项进行区分,应理解,“第一”、“第二”、“第n”之间不具有逻辑或时序上的依赖关系,也不对数量和执行顺序进行限定。还应理解,尽管以下描述使用术语第一、第二等来描述各种元素,但这些元素不应受术语的限制。这些术语只是用于将一元素与另一元素区别分开。In this application, the terms "first", "second" and other words are used to distinguish the same or similar items with basically the same functions and functions. It should be understood that the terms "first", "second" and "nth" There is no logical or sequential dependency, and there is no limit on the number or execution order. It should also be understood that, although the following description uses the terms first, second, etc. to describe various elements, these elements should not be limited by the terms. These terms are only used to distinguish one element from another.
还应理解,在本申请的各个实施例中,各个过程的序号的大小并不意味着执行顺序的先后,各过程的执行顺序应以其功能和内在逻辑确定,而不应对本申请实施例的实施过程构成任何限定。It should also be understood that in each embodiment of the present application, the size of the sequence number of each process does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not be determined by the execution order of the embodiments of the present application. The implementation process constitutes no limitation.
还应理解,术语“包括”(也称“includes”、“including”、“comprises”和/或“comprising”)当在本说明书中使用时指定存在所陈述的特征、整数、步骤、操作、元素、和/或部件,但是并不排除存在或添加一个或多个其他特征、整数、步骤、操作、元素、部件、和/或其分组。It will also be understood that the term "includes" (also "includes," "including," "comprises," and/or "comprising") when used in this specification specifies the presence of stated features, integers, steps, operations, elements , and/or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groupings thereof.
还应理解,说明书通篇中提到的“一个实施例”、“一实施例”、“在本申请实施例的一些实现方式”意味着与实施例或实现方式有关的特定特征、结构或特性包括在本申请的至少一 个实施例中。因此,在整个说明书各处出现的“在一个实施例中”或“在一实施例中”、“在本申请实施例的一些实现方式”未必一定指相同的实施例。此外,这些特定的特征、结构或特性可以任意适合的方式结合在一个或多个实施例中。It should also be understood that references throughout the specification to “one embodiment,” “an embodiment,” and “some implementations of the embodiments of this application” mean specific features, structures, or characteristics related to the embodiments or implementations. Include in this application at least one in an embodiment. Therefore, “in one embodiment” or “in an embodiment” and “in some implementations of the embodiments of the present application” appearing in various places throughout this specification do not necessarily refer to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments.
最后应说明的是:以上各实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述各实施例对本申请进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。 Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present application, but not to limit it; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions described in the foregoing embodiments can still be modified, or some or all of the technical features can be equivalently replaced; and these modifications or substitutions do not deviate from the essence of the corresponding technical solutions from the technical solutions of the embodiments of the present application. scope.

Claims (15)

  1. 一种像素电路,其特征在于,所述像素电路包括第一晶体管、第二晶体管、第三晶体管、第四晶体管、第五晶体管、驱动晶体管、第一电容、第二电容和发光二极管;所述第一晶体管、第三晶体管、第四晶体管和第五晶体管为铟镓锌氧化物薄膜晶体管,所述第二晶体管和驱动晶体管为低温多晶硅薄膜晶体管;A pixel circuit, characterized in that the pixel circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a driving transistor, a first capacitor, a second capacitor and a light-emitting diode; The first transistor, the third transistor, the fourth transistor and the fifth transistor are indium gallium zinc oxide thin film transistors, and the second transistor and the driving transistor are low temperature polysilicon thin film transistors;
    所述第一晶体管的第一电极、所述第五晶体管的第一电极、所述第一电容的第一端和所述第二电容的第一端电连接相交于第一节点;The first electrode of the first transistor, the first electrode of the fifth transistor, the first end of the first capacitor and the first end of the second capacitor are electrically connected and intersect at the first node;
    所述第二电容的第二端、所述第四晶体管的第一电极和所述驱动晶体管的栅极电连接相交于第二节点;The second end of the second capacitor, the first electrode of the fourth transistor and the gate of the drive transistor are electrically connected to intersect at the second node;
    所述第一晶体管的第二电极、所述驱动晶体管的第一电极和所述第二晶体管的第一电极电连接相交于第三节点;The second electrode of the first transistor, the first electrode of the driving transistor and the first electrode of the second transistor are electrically connected and intersect at a third node;
    所述驱动晶体管的第二电极、所述第三晶体管的第一电极和所述发光二极管的阳极电连接相交于第四节点,所述发光二极管的阴极接地;The second electrode of the driving transistor, the first electrode of the third transistor and the anode of the light-emitting diode are electrically connected to intersect at a fourth node, and the cathode of the light-emitting diode is grounded;
    所述第一电容的第二端和所述第二晶体管的第二电极连接,所述第二晶体管的第二电极用于输入电源电压;The second end of the first capacitor is connected to the second electrode of the second transistor, and the second electrode of the second transistor is used to input the power supply voltage;
    所述第一晶体管、第二晶体管、第三晶体管、第四晶体管和第五晶体管的栅极分别用于输入栅极控制信号;The gates of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor are respectively used to input gate control signals;
    所述第五晶体管的第二电极用于输入数据电压,所述第三晶体管的第二电极用于输入第一初始化控制信号,所述第四晶体管的第二电极用于输入第二初始化控制信号。The second electrode of the fifth transistor is used to input a data voltage, the second electrode of the third transistor is used to input a first initialization control signal, and the second electrode of the fourth transistor is used to input a second initialization control signal. .
  2. 根据权利要求1所述的像素电路,其特征在于,所述像素电路还包括第六晶体管,所述第六晶体管的第一电极电连接到所述第三节点,所述第六晶体管的第二电极用于输入第三初始化控制信号。The pixel circuit of claim 1, wherein the pixel circuit further includes a sixth transistor, a first electrode of the sixth transistor is electrically connected to the third node, and a second electrode of the sixth transistor is electrically connected to the third node. The electrode is used to input the third initialization control signal.
  3. 根据权利要求2所述的像素电路,其特征在于,所述像素电路还包括第三电容,所述第三电容的第一端电连接到所述第一节点,所述第三电容的第二端电连接到所述第三节点。The pixel circuit of claim 2, wherein the pixel circuit further includes a third capacitor, a first end of the third capacitor is electrically connected to the first node, and a second end of the third capacitor is electrically connected to the first node. terminal is electrically connected to the third node.
  4. 根据权利要求2或3所述的像素电路,其特征在于,所述第五晶体管的栅极控制信号和所述第六晶体管的栅极控制信号为来自同一组栅极驱动电路中不同行的栅极驱动电路的控制信号。The pixel circuit according to claim 2 or 3, characterized in that the gate control signal of the fifth transistor and the gate control signal of the sixth transistor are gate signals from different rows in the same group of gate driving circuits. control signal for the pole drive circuit.
  5. 根据权利要求2-4任一项所述的像素电路,其特征在于,所述第六晶体管为铟镓锌氧化物薄膜晶体管;或者,所述第六晶体管为低温多晶硅薄膜晶体管。The pixel circuit according to any one of claims 2 to 4, wherein the sixth transistor is an indium gallium zinc oxide thin film transistor; or the sixth transistor is a low temperature polysilicon thin film transistor.
  6. 根据权利要求1所述的像素电路,其特征在于,在所述像素电路的初始化阶段和电压补偿阶段,所述第一晶体管、所述第三晶体管和所述第四晶体管导通,所述第二晶体管和所述第五晶体管关断;所述第四节点的电压初始化为所述第一初始化控制信号,所述第二节点的电压初始化为所述第二初始化控制信号,所述第三节点和所述第一节点的电压均为所述第二初始化控制信号与所述驱动晶体管的阈值电压的差值。The pixel circuit according to claim 1, characterized in that, during the initialization phase and the voltage compensation phase of the pixel circuit, the first transistor, the third transistor and the fourth transistor are turned on, and the third transistor is turned on. The second transistor and the fifth transistor are turned off; the voltage of the fourth node is initialized to the first initialization control signal, the voltage of the second node is initialized to the second initialization control signal, and the voltage of the third node is initialized to the first initialization control signal. The voltage of the first node is the difference between the second initialization control signal and the threshold voltage of the driving transistor.
  7. 根据权利要求2-5任一项所述的像素电路,其特征在于,在所述像素电路的初始化阶段,所述第六晶体管、所述第一晶体管、所述第三晶体管和所述第四晶体管导通,所述第二晶体管和所述第五晶体管关断;所述第四节点的电压初始化为所述第一初始化控制信号,所述第二节点的电压初始化为所述第二初始化控制信号,所述第三节点的电压初始化为所述第三初始化控制信号;The pixel circuit according to any one of claims 2 to 5, characterized in that, in the initialization stage of the pixel circuit, the sixth transistor, the first transistor, the third transistor and the fourth transistor are The transistor is turned on, the second transistor and the fifth transistor are turned off; the voltage of the fourth node is initialized to the first initialization control signal, and the voltage of the second node is initialized to the second initialization control signal. signal, the voltage of the third node is initialized to the third initialization control signal;
    在所述像素电路的电压补偿阶段,所述第六晶体管关断,其余的晶体管的状态保持所述 初始化阶段的状态,所述第三节点和所述第一节点的电压均为所述第二初始化控制信号与所述驱动晶体管的阈值电压的差值。During the voltage compensation phase of the pixel circuit, the sixth transistor is turned off, and the states of the remaining transistors remain as described. In the state of the initialization phase, the voltages of the third node and the first node are both the difference between the second initialization control signal and the threshold voltage of the driving transistor.
  8. 根据权利要求1所述的像素电路,其特征在于,在所述像素电路的数据写入阶段,所述第一晶体管和所述第五晶体管导通,所述第二晶体管、所述第三晶体管和所述第四晶体管关断;所述第一节点的电压为所述数据电压,所述第二节点的电压为所述数据电压与所述驱动晶体管的阈值电压的和。The pixel circuit according to claim 1, wherein during the data writing phase of the pixel circuit, the first transistor and the fifth transistor are turned on, and the second transistor and the third transistor are and the fourth transistor is turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor.
  9. 根据权利要求2-5任一项所述的像素电路,其特征在于,在所述像素电路的数据写入阶段,所述第一晶体管和所述第五晶体管导通,所述第二晶体管、所述第三晶体管、所述第四晶体管和所述第六晶体管关断;所述第一节点的电压为所述数据电压,所述第二节点的电压为所述数据电压与所述驱动晶体管的阈值电压的和。The pixel circuit according to any one of claims 2 to 5, characterized in that, during the data writing stage of the pixel circuit, the first transistor and the fifth transistor are turned on, and the second transistor, The third transistor, the fourth transistor and the sixth transistor are turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the data voltage and the driving transistor. The sum of the threshold voltages.
  10. 根据权利要求2-5任一项所述的像素电路,其特征在于,所述第一晶体管和所述第四晶体管的栅极控制信号为同一路信号。The pixel circuit according to any one of claims 2 to 5, characterized in that the gate control signals of the first transistor and the fourth transistor are the same signal.
  11. 根据权利要求10所述的像素电路,其特征在于,在所述像素电路的数据写入阶段,所述第五晶体管导通,所述第一晶体管、所述第二晶体管、所述第三晶体管、所述第四晶体管和所述第六晶体管关断;所述第一节点的电压为所述数据电压,所述第二节点的电压为所述数据电压与所述驱动晶体管的阈值电压的和。The pixel circuit of claim 10, wherein during the data writing phase of the pixel circuit, the fifth transistor is turned on, and the first transistor, the second transistor, and the third transistor are , the fourth transistor and the sixth transistor are turned off; the voltage of the first node is the data voltage, and the voltage of the second node is the sum of the data voltage and the threshold voltage of the driving transistor. .
  12. 根据权利要求1所述的像素电路,其特征在于,在所述像素电路的发光阶段,所述第二晶体管导通,所述第一晶体管、所述第三晶体管、所述第四晶体管和所述第五晶体管关断;基于所述第二晶体管的第二电极输入的所述电源电压产生的驱动电流驱动所述发光二极管发光。The pixel circuit of claim 1, wherein during the light-emitting phase of the pixel circuit, the second transistor is turned on, and the first transistor, the third transistor, the fourth transistor and the The fifth transistor is turned off; the driving current generated based on the power supply voltage input by the second electrode of the second transistor drives the light-emitting diode to emit light.
  13. 根据权利要求2-5任一项所述的像素电路,其特征在于,在所述像素电路的发光阶段,所述第二晶体管导通,所述第一晶体管、所述第三晶体管、所述第四晶体管、所述第五晶体管和所述第六晶体管关断;基于所述第二晶体管的第二电极输入的所述电源电压产生的驱动电流驱动所述发光二极管发光。The pixel circuit according to any one of claims 2 to 5, characterized in that, during the light-emitting phase of the pixel circuit, the second transistor is turned on, the first transistor, the third transistor, the The fourth transistor, the fifth transistor and the sixth transistor are turned off; the driving current generated based on the power supply voltage input by the second electrode of the second transistor drives the light emitting diode to emit light.
  14. 根据权利要求1-13任一项所述的像素电路,其特征在于,在所述像素电路的调光阶段,通过对所述第二晶体管和所述第三晶体管的栅极控制信号进行脉冲宽度调制来调节所述发光二极管的发光亮度。The pixel circuit according to any one of claims 1 to 13, wherein during the dimming stage of the pixel circuit, the gate control signals of the second transistor and the third transistor are pulse width-controlled. Modulation to adjust the brightness of the light emitting diode.
  15. 一种显示屏,其特征在于,所述显示屏包括像素电路、栅极驱动电路、显示驱动芯片和电源芯片;所述栅极驱动电路用于为所述像素电路提供栅极控制信号,所述显示驱动芯片用于为所述像素电路提供初始化控制信号和数据电压,所述电源芯片用于为所述像素电路提供电源信号;所述像素电路为权利要求1-14任一项所述的像素电路。 A display screen, characterized in that the display screen includes a pixel circuit, a gate drive circuit, a display drive chip and a power chip; the gate drive circuit is used to provide a gate control signal for the pixel circuit, and the The display driver chip is used to provide initialization control signals and data voltages for the pixel circuit, and the power chip is used to provide power signals for the pixel circuit; the pixel circuit is the pixel according to any one of claims 1-14 circuit.
PCT/CN2023/084571 2022-03-30 2023-03-29 Pixel circuit and display screen WO2023185898A1 (en)

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