WO2023183800A2 - Silicon-carbon composite fiber - Google Patents
Silicon-carbon composite fiber Download PDFInfo
- Publication number
- WO2023183800A2 WO2023183800A2 PCT/US2023/064763 US2023064763W WO2023183800A2 WO 2023183800 A2 WO2023183800 A2 WO 2023183800A2 US 2023064763 W US2023064763 W US 2023064763W WO 2023183800 A2 WO2023183800 A2 WO 2023183800A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- silicon
- composite fiber
- phase
- carbon
- fiber
- Prior art date
Links
- 239000000835 fiber Substances 0.000 title claims abstract description 117
- 239000002153 silicon-carbon composite material Substances 0.000 title description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000002131 composite material Substances 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 68
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 61
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 12
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 229910052744 lithium Inorganic materials 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 229910014913 LixSi Inorganic materials 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000002243 precursor Substances 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 14
- 239000004917 carbon fiber Substances 0.000 description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 description 14
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 14
- 229910001416 lithium ion Inorganic materials 0.000 description 10
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 230000008595 infiltration Effects 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 229920002239 polyacrylonitrile Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910052634 enstatite Inorganic materials 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- BBCCCLINBSELLX-UHFFFAOYSA-N magnesium;dihydroxy(oxo)silane Chemical compound [Mg+2].O[Si](O)=O BBCCCLINBSELLX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052611 pyroxene Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 229920001059 synthetic polymer Polymers 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910007562 Li2SiO3 Inorganic materials 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 238000003991 Rietveld refinement Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000006138 lithiation reaction Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920005594 polymer fiber Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- -1 ringwoodite Chemical compound 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4584—Coating or impregnating of particulate or fibrous ceramic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/133—Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1393—Processes of manufacture of electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/364—Composites as mixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00853—Uses not provided for elsewhere in C04B2111/00 in electrochemical cells or batteries, e.g. fuel cells
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F11/00—Chemical after-treatment of artificial filaments or the like during manufacture
- D01F11/10—Chemical after-treatment of artificial filaments or the like during manufacture of carbon
- D01F11/12—Chemical after-treatment of artificial filaments or the like during manufacture of carbon with inorganic substances ; Intercalation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/021—Physical characteristics, e.g. porosity, surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the present disclosure relates to a silicon-carbon composite fiber and methods of making and using the same.
- Lithium-ion batteries have proliferated in the last decade and now are the power source of choice for providing portable power to electronic devices, cordless equipment, and vehicles.
- technology has become increasingly reliant on lithium-ion battery power, the lithium-ion battery industry has worked to extend the performance of their cells in order to provide maximum versatility to the end user.
- Graphite is commonly used in lithium-ion cells, due to its ability to remain stable and serve its function over multiple hundreds of cycles with little to no capacity loss. Silicon shows great promise as an anode material, due to its extremely high capacity (4000 mAh/g) relative to graphite (372 mAh/g), which is the current industry standard.
- silicon has the limitation of swelling 350% upon lithiation. This swelling can cause severe disruption of the internal cell structure and result in rapid loss of capacity as cell components are damaged and the anode grinds itself into smaller pieces and ultimately loses electrical connectivity.
- FIG. 1 is a graph summarizing results from Example 1.
- FIG. 2 is a graph summarizing results from Example 1.
- FIG. 3 is a graph summarizing results from Example 2.
- the present disclosure provides a silicon-carbon composite fiber comprising a silicon phase (“Si phase”) and a carbon phase (“C phase”).
- the Si and C phases form an intertwined network structure in the fiber, where each of the phases is interconnected and continuous throughout the fiber.
- the Si phase comprises nano-crystalline or amorphous elemental silicon.
- the Si phase is present in the fiber in a range of greater than 0 wt% to less than 100 wt%.
- the C phase comprises amorphous or crystalline carbon and is present in the fiber in a range of greater than 0 wt% to less than 100 wt%.
- the sum of the Si and C phases is in the range of 50 wt% to 100 wt%.
- the C phase comprises at least 30 wt% of the fiber and/or the Si phase comprises at least 20 wt% of the fiber.
- the composite fiber may also contain amorphous or crystalline silicon oxide, SiOx (x ⁇ 2).
- the composite may also contain other impurities, such as aluminum (Al), magnesium (Mg), chlorine (Cl), sodium (Na), nitrogen (N), carbon oxide (COx) (x ⁇ 2), and/or hydrocarbon chains.
- the composite fiber comprises 5 wt% or less, 4 wt% or less, 3 wt% or less, 2 wt% or less, or 1 wt% or less of Al.
- the composite fiber comprises 5 wt% or less, 4 wt% or less, 3 wt% or less, 2 wt% or less, or 1 wt% or less of Mg. In some embodiments, the composite fiber comprises 40 wt% or less, 35 wt% or less, 30 wt% or less, 25 wt% or less, 20 wt% or less, 15 wt% or less, 10 wt% or less, or 5 wt% or less of amorphous or crystalline silicon oxide, SiOx (x ⁇ 2).
- the composite fiber of the present disclosure has a BET specific surface area (“SS A”) of from greater than 0 to 100 m 2 /g, from 0.1 to 45 m 2 /g, from 0.1 to 10 m 2 /g, or from 0.1 to 6 m 2 /g.
- SS A BET specific surface area
- the composite fiber has a pore volume of greater than 0 to 0.3 cm 3 /g, from 0.01 to 0.3 cm 3 /g, from greater than 0 to 0.05 cm 3 /g, from 0.01 to 0.03 cm 3 /g, from greater than 0 to 0.1 cm 3 /g, from 0.02 to 0.06 cm 3 /g, or from 0.05 to 0.25 cm 3 /g.
- the composite fiber has an average pore size of from 5 to 80 nm, from 15 to 55 nm, from 20 to 35 nm, or from 15 to 40 nm.
- the composite fiber has an average diameter of from 0.1 to 20 microns, from 0.1 to 10 microns, from 0.5 to 6 microns, from 1 to 8 microns, or from 2 to 5 microns.
- the composite fiber has an aspect ratio of fiber length to diameter of at least 3, at least 5, or at least 10.
- the nano-crystalline silicon (elemental silicon) of the Si phase may have crystallites having an average size of from 10 to 100 nm, from 15 to 50 nm, from 20 to 45 nm, from 20 to 50 nm, or from 20 to 40 nm.
- the Si phase comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, at least 75 wt%, at least 80 wt%, 75 to 90 wt%, or at least 90 wt% of nano-crystalline silicon based on a total weight of the Si phase.
- the Si phase comprises at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous or crystalline silicon oxide (SiOx (x ⁇ 2)).
- the Si phase consists of nano-crystalline silicon, amorphous silicon, and amorphous or crystalline silicon oxide.
- the Si phase consists of amorphous and crystalline silicon or consists of crystalline silicon.
- a silica phase may be present, in which the silica phase consists of amorphous and/ or crystalline silicon oxide.
- the silica phase may be continuous or discontinuous within the composite fiber.
- the silica phase may form islands within the Si phase and/or the C phase.
- a weight ratio between the Si phase and the silica phase within the composite fiber is from 1 :1 to 30: 1, from 1: 1 to 20: 1, from 2: 1 to 10:1, or from 5:1 to 10:1
- the silica phase is mostly amorphous silica and a weight ratio of amorphous silica to crystalline silica is from greater than 1 : 1 to 500: 1 , from 2:1 to 200:1 , from 10: 1 to 100:1 , or from 50: 1 to 100: 1 .
- the crystalline silicon is formed of silicon crystallites. Without being bound by theory, it is believed that a silicon crystallite size of at least 10 nm increases the 1st cycle Coulombic efficiency (FCE) of a half-cell including the composite fibers.
- the FCE measures the amount of capacity that is irreversibly lost during the first cycle of a battery. Minimizing this loss is important as the lost capacity (i.e., spent lithium ions) is carried in the battery as dead weight for the life of the battery. It is believed that the loss is primarily caused by the formation of a solid electrolyte interface (SEI) on surfaces of the active material which traps lithium in the interior of silicon particles.
- SEI solid electrolyte interface
- the C phase may have carbon crystallites ranging in size from 1 to 100 nm, 15 to 50 nm, 1 to 50 nm, or 5 to 20 nm.
- the C phase comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, or at least 80 wt% of crystalline carbon based on a total weight of the C phase.
- the C phase comprises at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of crystalline carbon.
- the C phase comprises at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous carbon. In other embodiments, the C phase comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, or at least 80 wt% of amorphous carbon. In some embodiments, the C phase consists of crystalline carbon and amorphous carbon.
- one of the Si phase or the C phase has a crystalline content of greater than 50 wt% while the other of the Si phase or the C phase has a crystalline content of less than 50 wt%, based on the weight of the respective phase.
- one of the Si phase or the C phase has a crystalline content of greater than 60 wt% while the other of the Si phase or the C phase has a crystalline content of less than 40 wt%.
- one of the Si phase or the C phase has a crystalline content of greater than 70 wt% while the other of the Si phase or the C phase has a crystalline content of less than 30 wt%.
- the composite fiber is formed by infiltrating a carbon structure with silicon.
- the composite fiber can be formed by first making a porous carbon fiber, followed by silicon infiltration into the pore structure.
- the silicon infiltration can be made through a chemical vapor deposition (CVD) process using a silicon precursor gas, such as silane or trichlorosilane.
- CVD chemical vapor deposition
- Making the porous carbon fiber may include multiple steps. For instance, first a synthetic polymer fiber may be made with polymers such as polyacrylonitrile (PAN), pitch, rayon, and resin.
- a carbon fiber may then be made by pyrolyzing the synthetic polymer.
- the carbon fiber may be treated by activation or chemical exfoliation.
- the porous structure of the carbon fiber is formed by heat treating (e g., at 700 °C to 1000 °C) the carbon fiber under an oxidizing atmosphere.
- the carbon fiber may be treated with an exfoliant, such as an acid, and an electric charge may be applied to the fiber.
- an exfoliant such as an acid
- a polymer blend for example PAN mixed with polymethylmethacrylate (PMMA) may be fiberized into a polymer fiber, which is then oxidized and phase-separated. PMMA may then be removed by pyrolysis, leaving behind a porous carbon fiber.
- the porous carbon fiber prior to being infiltrated with silicon, comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, or at least 80 wt% of crystalline carbon.
- the porous carbon fiber may comprise at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous carbon.
- the porous carbon fiber may comprise at most 15 wt%, at most 10 wt%, or at most 5 wt% of impurities (components other than crystalline or amorphous carbon).
- PSD Porous Silicon Fiber Template
- the composite fiber is formed by infiltrating a silicon structure with carbon.
- the composite fiber may be formed by first making a porous silicon fiber template (PSFT) comprising metallic silicon, followed by carbon infiltration into the pores.
- PSFT porous silicon fiber template
- a SiCh-containing fiber i.e., a precursor fiber
- the precursor fiber can be a silica fiber made by a sol-gel fiberization method, or by acid leaching an oxide glass fiber.
- the precursor fiber is reduced to the PSFT comprising metallic silicon by, for example, magnesiothermic reduction.
- the PSFT is then infiltrated with carbon, for example, through a chemical vapor deposition (CVD) process with a carbonaceous source such as acetylene, or using other deposition processes such as physical vapor deposition, sputtering, atomic layer deposition, or infiltrating the porous fiber first with a hydrocarbon polymer (e.g. resin, polyvinylacetate (PVA)) and converting the polymer into carbon by pyrolysis.
- CVD chemical vapor deposition
- PVA polyvinylacetate
- silicon crystallite size within the PSFT may be controlled by the magnesiothermic reduction conditions.
- magnesiothermic reduction conditions it has been found that greater temperature increases and/or longer exposure to such temperatures tends to form larger silicon crystallites.
- a heat effect AT is characterized by a calculated temperature increase from the exothermic magnesiothermic reduction reaction (i.e., an increase above a firing temperature used to initiate reaction, e.g., around 550 to 600 °C).
- the magnesiothermic reduction reaction is as follows: lSiO 2 + 2Mg ->2MgO + ISi
- the maximum temperature increase (AT) from this reaction can be estimated by: where AH is the enthalpy per mole of reaction, MM 8 is the molar mass of Mg, mMg, msi, mMgo, mmod are the mass of Mg, Si, MgO, and moderator respectively, and Cp, si, C P ,Mgo, C P , mod are the specific heat capacity of Si, MgO, and moderator respectively.
- the AT may be maintained in a range of from about 300 °C to about 900 °C or from about 300 °C to about 700 °C.
- the AT may be controlled by, for example, varying an amount of moderator used in the reaction. In general, increased amounts of moderator will reduce the AT as the moderator constitutes thermal mass that will absorb reaction heat.
- Moderators may include, but are not limited to, sodium chloride, alumina, alumina silicate, zirconia, zirconia silicate, magnesia, carbon, silicon carbide, silicon nitride, or any material that has a melting point of at least 800 °C.
- the exposure time of the PSFT to the AT may be very quick (e.g., nearly spontaneous).
- a thermally insulating crucible such as an alumina crucible, may prolong the effects of the AT such that larger crystallites may be formed at relatively lower AT (e g., from about 200 °C to about 600 °C).
- the PSFT may undergo a wash, such as an acid wash, to remove one or more of these byproducts.
- the PSFT-before or after a wash- may include at most 10 wt%, at most 5 wt%, at most 3 wt%, at most 2 wt%, or at most 1 wt% of total byproducts.
- forsterite is present in the washed or unwashed PSFT in an amount of at most 5 wt%, at most 3 wt%, at most 2 wt%, less than 2 wt%, or less than 1 wt%.
- ringwoodite is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, or less than 1 wt%.
- enstatite is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%.
- spinel is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%.
- crystalline silica is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%.
- pyroxene is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%.
- the AT is maintained below 700 °C, below 600 °C, or below 500 °C in order to minimize the formation of such byproducts.
- a maximum reaction temperature observed (typically, for a fraction of a second) during the magnesiothermic reduction of silica fibers is 1500 °C, 1400 °C, 1300 °C, 1200 °C, 1100 °C, 1000 °C, 900 °C, 800 °C, 700 °C, or 600 °C.
- the maximum reaction temperature is at least 300 °C, 400 °C, 500 °C, 600 °C, 700 °C, 800 °C, 900 °C, 1000 °C, 1100 °C, 1200 °C, 1300 °C, or 1400 °C.
- the maximum reaction temperature may range between any logical combination of the foregoing upper and lower bounds.
- the PSFT comprising metallic silicon functions as a template matrix for incorporating carbon to form the composite fiber.
- the metallic silicon-containing fiber may also have a mean pore diameter in the range of 5 to 80 nm, a pore volume in the range of 0.2 to 0.9 cm 3 /g, and a specific surface area in the range of 50 to 350 m 2 /g.
- the PSFT may have a crystalline silicon content (Si%) of 50 - 100 wt%, at least 75 wt%, 75 to 90 wt%, or at least 90 wt% and a silicon crystallite size of 10 to 100 nm, 15 to 50 nm, 20 to 50 nm, 20 to 45 nm, or 20 to 40 nm.
- the PSFT comprises crystalline silicon, in the range of 50 to 100 wt%, and amorphous silicon oxide (SiOx), in the range of 0 to 50 wt%, determined by Rietveld analysis.
- the amorphous silicon oxide in the PSFT is either stoichiometric (SiCh) or nonstoichiometric, SiOx where x ⁇ 2.
- the PSFT prior to being infiltrated with carbon, comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, at least 75 wt%, 75 to 90 wt%, at least 80 wt%, or at least 90 wt% of crystalline silicon (nano-crystalline silicon).
- the PSFT may comprise at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous or crystalline silicon oxide.
- the PSFT may comprise at most 15 wt%, at most 10 wt%, or at most 5 wt% of impurities (components other than silicon or silicon oxide).
- the material properties can be controlled through the reduction recipe design, firing temperature program, post heat treatment, load ratio, and/or the particle size of the moderator. For example, varying the particle size of the moderator will vary the stacking density of the batch or the space partition among the reactants. With larger moderator particles, the crystallite size tends to be larger. In some embodiments, larger crystallite sizes may be achieved by a two-step firing process wherein a first firing is conducted in the presence of a moderator to achieve crystallite sizes of about 6 to 12 nm and a second firing in the presence of a reduced amount of moderator (or no moderator) increases the crystallite sizes to about 20 to 100 nm.
- the fired batch is screened to remove the moderator from the first firing and/or washed to remove magnesium oxide (MgO).
- MgO magnesium oxide
- a higher load relative to the size of the heating vessel typically results in larger crystallite sizes as the heating vessel acts as a moderator. That is, in a continuous process, a higher feed rate onto a conveyor belt can result in larger crystallite sizes and, in a batch process, a higher loading amount within the batch can result in larger crystallite sizes.
- a weight ratio of the moderator (e.g., sodium chloride and/or alumina) to the magnesium is at most 15, at most 12, at most 10, or at most 7.
- the PSFT is infiltrated with carbon.
- the Si-C composite fiber may have a carbon content of 20 to 70 wt%, 20 to 45 wt%, 32 to 50 wt%, or 30 to 50 wt%, with an FCE of at least 78% and a 1st cycle specific delithiation capacity (1SDC) of at least 1300 mAh/g or at least 1800 mAh/g in a half-cell test.
- the majority of the elements in the composite fiber are Si, C, and oxygen (O), with these elements accounting for, for example, at least 50 wt%, at least 60 wt%, at least 70 wt%, at least 80 wt%, at least 90 wt%, at least 95 wt%, at least 99 wt%, or at least 99.5 wt% of the composite fiber.
- the composite fiber has a value for Formula 1 below of at least 77, at least 78, at least 79, or at least 80, wherein X is an average silicon crystallite size in the Si phase in nm and Y is the percent by weight of the C phase based on a total weight of the composite fiber:
- the composite fiber has a value for Formula 2 below of at least 1200, at least 1300, at least 1400, at least 1500, at least 1800, or at least 2000, wherein Y is the percent by weight of the C phase based on a total weight of the composite fiber and Z is the percent by weight of elemental silicon in the Si phase:
- the composite fiber includes an Si phase having at least 90 wt% of crystalline silicon having an average crystallite size of 20 to 40 nm and a C phase comprising 20 to 45 wt% of the composite fiber.
- An anode including this composite fiber may be able to provide a 1 SDC of greater than 1800 mAh/g and an FCE of greater than 78%.
- the composite fiber includes an Si phase having 75-90 wt% of crystalline silicon having an average crystallize size of 20 to 45 nm and a C phase comprising 32 to 50 wt% of the composite fiber.
- An anode including this composite fiber may be able to provide a 1SDC of greater than 1300 mAh/g, an FCE of greater than 78%, and a tenth cycle Coulombic efficiency (10CE) of greater than 98.7%.
- the FCE is improved by forming the composite fiber of intertwined Si-C domains. It can be expected that the specific capacity reduces to the minimum at 100% carbon (about 372 mAh/g if the carbon is pure graphite and even less if the carbon is carbon black). Therefore, it is important to balance the FCE and capacity by appropriately adjusting the infiltration amount of carbon, especially in the full cell or battery design.
- the amount of carbon that can be infiltrated into the PSFT is generally limited by a pore volume of the PSFT, i.e., the void space accessible to the carbon. Higher pore volume allows more carbon to infiltrate, thus resulting in a higher possible carbon content.
- the total volume of the formed Si-C composite is not changed relative to the original PSFT or carbon fiber template.
- the FCE is significantly improved and the charging and discharging volumetric capacity of a single fiber is increased.
- the composite Si-C fibers are able to provide superior properties as compared with simple mixtures of Si fiber and carbon materials (e.g., carbon black or graphite).
- Electrons and lithium ions have a higher diffusion rate in carbon than silicon.
- the interconnected carbon network in the composite fiber facilitates the transport of electrons and lithium ions from an outer surface of the composite fiber to the interior of the composite fiber or the transport from the interior of the composite fiber to the outer surface of the composite fiber. Therefore, the number of electrons and lithium ions as well as their transport rate increases with the carbon content in the fiber.
- the diffusion rate improvement also reduces the exposure time of tension stress buildup on the surface of the Si domain in the delithiation step, which helps avoid the cracking of silicon domains.
- the diffusion rate improvement also helps reduce the exposure time of tension stress buildup of the fiber surface in the delithiation step, and thus avoids the cracking of the fiber surface.
- the composite fiber may comprise lithium wherein the lithium and at least a portion of the silicon from the Si phase form an LixSi alloy where x is from greater than 0 to 4.
- the lithium-containing composite fiber further comprises Li2SiO3.
- the lithium-containing composite fiber may be formed by making a nanoporous fibrous structure of one of silicon or carbon, subsequently infiltrating the structure with the other of carbon or silicon, and then reacting the infiltrated structure with a lithium source to form the LixSi alloy.
- the lithium-containing composite fiber may be formed by making a nanoporous fibrous structure of silicon, then reacting the structure with a lithium source to form the LixSi alloy, and finally infiltrating the structure with carbon.
- the lithium-containing composite can be formed by introducing lithium into a Si-C composite fiber to form the LixSi alloy.
- Blank cells in Tables 2-4 indicate properties that were not measured and/or could not be detected.
- Examples 1-27 each achieved an FCE of at least 78% and a 1SDC of at least 1300 mAh/g.
- Comparative Examples 1 and 2 had very large crystallites and provided an FCE of 75.8% and 62.1%, respectively, and a 1SDC of 1162 and 1057 mAh/g, respectively.
- Comparative Example 3 had a low silicon content and poor 1SDC.
- Comparative Examples 4 and 5 had very high carbon content and insufficient 1 SDC.
- Comparative Examples 6 and 7 had good 1 SDC but the low carbon content resulted in poor FCE.
- Comparative Examples 8-18 had small crystallites and/or high carbon content and the resultant 1SDC and/or FCE were insufficient. Comparative Examples 19-32 each had silicon crystallite sizes of below 10 nm and only achieved an FCE of up to 65.5%.
- FIG. 1 shows the effects of silicon crystallite size on the 1SDC.
- FIG. 2 shows the effects of silicon content in the composite fiber and the silicon crystallite size on the 10CE.
- Example 2 Heat effect on crystallite size
- Table 5 summarizes the reduction conditions for select PSFT from Table 2 above.
- a mixture of silica fiber, Mg, and moderator sodium chloride, alumina beads, and/or tabular alumina
- Comparative Examples 1-3 used an alumina crucible
- Comparative Examples 4, 5, 10-20, and 26-30 and Examples 6, 7, 9, 11, 22, and 26 used a metal crucible
- the remaining examples used a rotary kiln.
- the reactions were performed in an argon atmosphere and the fibers were washed before being analyzed (analysis results in Table 2).
- the reaction conditions such as the ratio of moderator to magnesium, the crystallite size can be tailored to fall within the ranges disclosed herein. Select examples are plotted in FIG. 3 to demonstrate the effect of AT on silicon crystallite size.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Inorganic Fibers (AREA)
Abstract
A composite fiber includes a porous silicon phase including elemental silicon and a porous carbon phase including elemental carbon. The silicon phase and the carbon phase form an intertwined network structure in the composite fiber such that each of the silicon phase and the carbon phase is interconnected and continuous throughout the composite fiber. The silicon phase and the carbon phase together constitute at least 50 percent by weight of the composite fiber.
Description
SILICON-CARBON COMPOSITE FIBER
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. Provisional Patent Application No. 63/269,652, filed March 21, 2022, which is incorporated herein by reference in its entirety.
FIELD OF THE DISCLOSURE
[0002] The present disclosure relates to a silicon-carbon composite fiber and methods of making and using the same.
BACKGROUND
[0003] Lithium-ion batteries have proliferated in the last decade and now are the power source of choice for providing portable power to electronic devices, cordless equipment, and vehicles. As technology has become increasingly reliant on lithium-ion battery power, the lithium-ion battery industry has worked to extend the performance of their cells in order to provide maximum versatility to the end user.
[0004] Graphite is commonly used in lithium-ion cells, due to its ability to remain stable and serve its function over multiple hundreds of cycles with little to no capacity loss. Silicon shows great promise as an anode material, due to its extremely high capacity (4000 mAh/g) relative to graphite (372 mAh/g), which is the current industry standard. However, silicon has the limitation of swelling 350% upon lithiation. This swelling can cause severe disruption of the internal cell structure and result in rapid loss of capacity as cell components are damaged and the anode grinds itself into smaller pieces and ultimately loses electrical connectivity. Thus, there is a continuing need for improved silicon-containing anode materials and methods of preparing such silicon-containing anode materials.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] Various embodiments of the present disclosure will be understood more fully from the detailed description given below and from the accompanying drawings. In the drawings, like reference numbers may indicate identical or functionally similar elements. Embodiments are described in detail hereinafter with reference to the accompanying figures, in which:
[0006] FIG. 1 is a graph summarizing results from Example 1.
[0007] FIG. 2 is a graph summarizing results from Example 1.
[0008] FIG. 3 is a graph summarizing results from Example 2.
DETAILED DESCRIPTION
[0009] The following disclosure provides many different embodiments or examples. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
[0010] Composite Fiber
[0011] The present disclosure provides a silicon-carbon composite fiber comprising a silicon phase (“Si phase”) and a carbon phase (“C phase”). The Si and C phases form an intertwined network structure in the fiber, where each of the phases is interconnected and continuous throughout the fiber. The Si phase comprises nano-crystalline or amorphous elemental silicon. The Si phase is present in the fiber in a range of greater than 0 wt% to less than 100 wt%. The C phase comprises amorphous or crystalline carbon and is present in the fiber in a range of greater than 0 wt% to less than 100 wt%. In some embodiments, the sum of the Si and C phases is in the range of 50 wt% to 100 wt%. In some embodiments, the C phase comprises at least 30 wt% of the fiber and/or the Si phase comprises at least 20 wt% of the fiber.
[0012] In one or more embodiments, the composite fiber may also contain amorphous or crystalline silicon oxide, SiOx (x< 2). The composite may also contain other impurities, such as aluminum (Al), magnesium (Mg), chlorine (Cl), sodium (Na), nitrogen (N), carbon oxide (COx) (x<2), and/or hydrocarbon chains. In some embodiments, the composite fiber comprises 5 wt% or less, 4 wt% or less, 3 wt% or less, 2 wt% or less, or 1 wt% or less of Al. In some embodiments, the composite fiber comprises 5 wt% or less, 4 wt% or less, 3 wt% or less, 2 wt% or less, or 1 wt% or less of Mg. In some embodiments, the composite fiber comprises 40 wt% or less, 35 wt% or less, 30 wt% or less, 25 wt% or less, 20 wt% or less, 15 wt% or less, 10 wt% or less, or 5 wt% or less of amorphous or crystalline silicon oxide, SiOx (x< 2).
[0013] In one or more embodiments, the composite fiber of the present disclosure has a BET specific surface area (“SS A”) of from greater than 0 to 100 m2/g, from 0.1 to 45 m2/g, from 0.1 to 10 m2/g, or from 0.1 to 6 m2/g.
[0014] In one or more embodiments, the composite fiber has a pore volume of greater than 0 to 0.3 cm3/g, from 0.01 to 0.3 cm3/g, from greater than 0 to 0.05 cm3/g, from 0.01 to 0.03 cm3/g, from greater than 0 to 0.1 cm3/g, from 0.02 to 0.06 cm3/g, or from 0.05 to 0.25 cm3/g.
[0015] In one or more embodiments, the composite fiber has an average pore size of from 5 to 80 nm, from 15 to 55 nm, from 20 to 35 nm, or from 15 to 40 nm.
[0016] In one or more embodiments, the composite fiber has an average diameter of from 0.1 to 20 microns, from 0.1 to 10 microns, from 0.5 to 6 microns, from 1 to 8 microns, or from 2 to 5 microns.
[0017] In one or more embodiments, the composite fiber has an aspect ratio of fiber length to diameter of at least 3, at least 5, or at least 10.
[0018] The nano-crystalline silicon (elemental silicon) of the Si phase may have crystallites having an average size of from 10 to 100 nm, from 15 to 50 nm, from 20 to 45 nm, from 20 to 50 nm, or from 20 to 40 nm. In some embodiments, the Si phase comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, at least 75 wt%, at least 80 wt%, 75 to 90 wt%, or at least 90 wt% of nano-crystalline silicon based on a total weight of the Si phase. In some embodiments, the Si phase comprises at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous or crystalline silicon oxide (SiOx (x< 2)). In some embodiments, the Si phase consists of nano-crystalline silicon, amorphous silicon, and amorphous or crystalline silicon oxide.
[0019] In some embodiments, the Si phase consists of amorphous and crystalline silicon or consists of crystalline silicon. In such embodiments, a silica phase may be present, in which the silica phase consists of amorphous and/ or crystalline silicon oxide. The silica phase may be continuous or discontinuous within the composite fiber. For example, the silica phase may form islands within the Si phase and/or the C phase. In some embodiments, a weight ratio between the Si phase and the silica phase within the composite fiber is from 1 :1 to 30: 1, from 1: 1 to 20: 1, from 2: 1 to 10:1, or from 5:1 to 10:1 In some embodiments, the silica phase is mostly
amorphous silica and a weight ratio of amorphous silica to crystalline silica is from greater than 1 : 1 to 500: 1 , from 2:1 to 200:1 , from 10: 1 to 100:1 , or from 50: 1 to 100: 1 .
[0020] The crystalline silicon is formed of silicon crystallites. Without being bound by theory, it is believed that a silicon crystallite size of at least 10 nm increases the 1st cycle Coulombic efficiency (FCE) of a half-cell including the composite fibers. The FCE measures the amount of capacity that is irreversibly lost during the first cycle of a battery. Minimizing this loss is important as the lost capacity (i.e., spent lithium ions) is carried in the battery as dead weight for the life of the battery. It is believed that the loss is primarily caused by the formation of a solid electrolyte interface (SEI) on surfaces of the active material which traps lithium in the interior of silicon particles. By increasing the size of the silicon crystallites, a smaller portion of lithium ions are consumed during the SET formation on the surface of silicon crystallites as the specific surface area of the material decreases with the increasing crystallite size.
[0021] The C phase may have carbon crystallites ranging in size from 1 to 100 nm, 15 to 50 nm, 1 to 50 nm, or 5 to 20 nm. In some embodiments, the C phase comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, or at least 80 wt% of crystalline carbon based on a total weight of the C phase. In other embodiments, the C phase comprises at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of crystalline carbon. In some embodiments, the C phase comprises at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous carbon. In other embodiments, the C phase comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, or at least 80 wt% of amorphous carbon. In some embodiments, the C phase consists of crystalline carbon and amorphous carbon.
[0022] In one or more embodiments, one of the Si phase or the C phase has a crystalline content of greater than 50 wt% while the other of the Si phase or the C phase has a crystalline content of less than 50 wt%, based on the weight of the respective phase. In some embodiments, one of the Si phase or the C phase has a crystalline content of greater than 60 wt% while the other of the Si phase or the C phase has a crystalline content of less than 40 wt%. In some embodiments, one of the Si phase or the C phase has a crystalline content of greater than 70 wt% while the other of the Si phase or the C phase has a crystalline content of less than 30 wt%.
[0023] Carbon Precursor Fiber
[0024] In some embodiments, the composite fiber is formed by infiltrating a carbon structure with silicon. For example, the composite fiber can be formed by first making a porous carbon fiber, followed by silicon infiltration into the pore structure. The silicon infiltration can be made through a chemical vapor deposition (CVD) process using a silicon precursor gas, such as silane or trichlorosilane. Making the porous carbon fiber may include multiple steps. For instance, first a synthetic polymer fiber may be made with polymers such as polyacrylonitrile (PAN), pitch, rayon, and resin. A carbon fiber may then be made by pyrolyzing the synthetic polymer. In order to make the carbon fiber porous, the carbon fiber may be treated by activation or chemical exfoliation. In an activation method, the porous structure of the carbon fiber is formed by heat treating (e g., at 700 °C to 1000 °C) the carbon fiber under an oxidizing atmosphere. Tn the chemical exfoliation method, the carbon fiber may be treated with an exfoliant, such as an acid, and an electric charge may be applied to the fiber. Alternatively, a polymer blend, for example PAN mixed with polymethylmethacrylate (PMMA), may be fiberized into a polymer fiber, which is then oxidized and phase-separated. PMMA may then be removed by pyrolysis, leaving behind a porous carbon fiber.
[0025] In some embodiments, the porous carbon fiber, prior to being infiltrated with silicon, comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, or at least 80 wt% of crystalline carbon. The porous carbon fiber may comprise at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous carbon. The porous carbon fiber may comprise at most 15 wt%, at most 10 wt%, or at most 5 wt% of impurities (components other than crystalline or amorphous carbon).
[0026] Porous Silicon Fiber Template (PSFT)
[0027] In some embodiments, the composite fiber is formed by infiltrating a silicon structure with carbon. For example, the composite fiber may be formed by first making a porous silicon fiber template (PSFT) comprising metallic silicon, followed by carbon infiltration into the pores. In order to make the PSFT, a SiCh-containing fiber, i.e., a precursor fiber, is first made. The precursor fiber can be a silica fiber made by a sol-gel fiberization method, or by acid leaching an oxide glass fiber.
[0028] The precursor fiber is reduced to the PSFT comprising metallic silicon by, for example, magnesiothermic reduction. The PSFT is then infiltrated with carbon, for example, through a chemical vapor deposition (CVD) process with a carbonaceous source such as acetylene, or using other deposition processes such as physical vapor deposition, sputtering, atomic layer deposition, or infiltrating the porous fiber first with a hydrocarbon polymer (e.g. resin, polyvinylacetate (PVA)) and converting the polymer into carbon by pyrolysis.
[0029] In one or more embodiments, silicon crystallite size within the PSFT may be controlled by the magnesiothermic reduction conditions. In particular, it has been found that greater temperature increases and/or longer exposure to such temperatures tends to form larger silicon crystallites. A heat effect AT is characterized by a calculated temperature increase from the exothermic magnesiothermic reduction reaction (i.e., an increase above a firing temperature used to initiate reaction, e.g., around 550 to 600 °C). The magnesiothermic reduction reaction is as follows: lSiO2 + 2Mg ->2MgO + ISi
[0030] The maximum temperature increase (AT) from this reaction can be estimated by:
where AH is the enthalpy per mole of reaction, MM8 is the molar mass of Mg, mMg, msi, mMgo, mmod are the mass of Mg, Si, MgO, and moderator respectively, and Cp, si, CP,Mgo, CP, mod are the specific heat capacity of Si, MgO, and moderator respectively.
[0031] In some embodiments, the AT may be maintained in a range of from about 300 °C to about 900 °C or from about 300 °C to about 700 °C. The AT may be controlled by, for example, varying an amount of moderator used in the reaction. In general, increased amounts of moderator will reduce the AT as the moderator constitutes thermal mass that will absorb reaction heat. Moderators may include, but are not limited to, sodium chloride, alumina, alumina silicate, zirconia, zirconia silicate, magnesia, carbon, silicon carbide, silicon nitride, or any material that has a melting point of at least 800 °C. The exposure time of the PSFT to the AT may be very quick (e.g., nearly spontaneous). In some embodiments, a thermally insulating crucible, such as
an alumina crucible, may prolong the effects of the AT such that larger crystallites may be formed at relatively lower AT (e g., from about 200 °C to about 600 °C).
[0032] High AT or long exposures thereto may result in a number of byproducts, such as forsterite, ringwoodite, crystalline silica, spinel, enstatite, and/or pyroxene. In some embodiments, the PSFT may undergo a wash, such as an acid wash, to remove one or more of these byproducts. In some embodiments, the PSFT-before or after a wash- may include at most 10 wt%, at most 5 wt%, at most 3 wt%, at most 2 wt%, or at most 1 wt% of total byproducts. In some embodiments, forsterite is present in the washed or unwashed PSFT in an amount of at most 5 wt%, at most 3 wt%, at most 2 wt%, less than 2 wt%, or less than 1 wt%. In some embodiments, ringwoodite is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, or less than 1 wt%. Tn some embodiments, enstatite is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%. In some embodiments, spinel is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%. In some embodiments, crystalline silica is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%. In some embodiments, pyroxene is present in the washed or unwashed PSFT in an amount of at most 3 wt%, at most 2 wt%, less than 2 wt%, less than 1 wt%, or less than 0.5 wt%. In some embodiments, the AT is maintained below 700 °C, below 600 °C, or below 500 °C in order to minimize the formation of such byproducts.
[0033] In some embodiments, a maximum reaction temperature observed (typically, for a fraction of a second) during the magnesiothermic reduction of silica fibers is 1500 °C, 1400 °C, 1300 °C, 1200 °C, 1100 °C, 1000 °C, 900 °C, 800 °C, 700 °C, or 600 °C. In some embodiments, the maximum reaction temperature is at least 300 °C, 400 °C, 500 °C, 600 °C, 700 °C, 800 °C, 900 °C, 1000 °C, 1100 °C, 1200 °C, 1300 °C, or 1400 °C. In some embodiments, the maximum reaction temperature may range between any logical combination of the foregoing upper and lower bounds.
[0034] The PSFT comprising metallic silicon functions as a template matrix for incorporating carbon to form the composite fiber. The metallic silicon-containing fiber may also have a mean pore diameter in the range of 5 to 80 nm, a pore volume in the range of 0.2 to 0.9
cm3/g, and a specific surface area in the range of 50 to 350 m2/g. The PSFT may have a crystalline silicon content (Si%) of 50 - 100 wt%, at least 75 wt%, 75 to 90 wt%, or at least 90 wt% and a silicon crystallite size of 10 to 100 nm, 15 to 50 nm, 20 to 50 nm, 20 to 45 nm, or 20 to 40 nm.
[0035] In some embodiments, the PSFT comprises crystalline silicon, in the range of 50 to 100 wt%, and amorphous silicon oxide (SiOx), in the range of 0 to 50 wt%, determined by Rietveld analysis. The amorphous silicon oxide in the PSFT is either stoichiometric (SiCh) or nonstoichiometric, SiOx where x<2. In some embodiments, the PSFT, prior to being infiltrated with carbon, comprises at least 50 wt%, at least 60 wt%, at least 70 wt%, at least 75 wt%, 75 to 90 wt%, at least 80 wt%, or at least 90 wt% of crystalline silicon (nano-crystalline silicon). The PSFT may comprise at most 50 wt%, at most 40 wt%, at most 30 wt%, at most 20 wt%, or at most 10 wt% of amorphous or crystalline silicon oxide. The PSFT may comprise at most 15 wt%, at most 10 wt%, or at most 5 wt% of impurities (components other than silicon or silicon oxide).
[0036] An example of material properties for the PSFT is summarized in Table 1 below. The material properties can be controlled through the reduction recipe design, firing temperature program, post heat treatment, load ratio, and/or the particle size of the moderator. For example, varying the particle size of the moderator will vary the stacking density of the batch or the space partition among the reactants. With larger moderator particles, the crystallite size tends to be larger. In some embodiments, larger crystallite sizes may be achieved by a two-step firing process wherein a first firing is conducted in the presence of a moderator to achieve crystallite sizes of about 6 to 12 nm and a second firing in the presence of a reduced amount of moderator (or no moderator) increases the crystallite sizes to about 20 to 100 nm. Between the first and second firings, the fired batch is screened to remove the moderator from the first firing and/or washed to remove magnesium oxide (MgO). With respect to the load ratio, a higher load relative to the size of the heating vessel (e.g., a crucible, conveyor belt, or rotary kiln) typically results in larger crystallite sizes as the heating vessel acts as a moderator. That is, in a continuous process, a higher feed rate onto a conveyor belt can result in larger crystallite sizes and, in a batch process, a higher loading amount within the batch can result in larger crystallite sizes. In some
embodiments, a weight ratio of the moderator (e.g., sodium chloride and/or alumina) to the magnesium is at most 15, at most 12, at most 10, or at most 7.
[0038] In one or more embodiments, to form the composite fiber, the PSFT is infiltrated with carbon. In such embodiments, the Si-C composite fiber may have a carbon content of 20 to 70 wt%, 20 to 45 wt%, 32 to 50 wt%, or 30 to 50 wt%, with an FCE of at least 78% and a 1st cycle specific delithiation capacity (1SDC) of at least 1300 mAh/g or at least 1800 mAh/g in a half-cell test.
[0039] In one or more embodiments, the majority of the elements in the composite fiber are Si, C, and oxygen (O), with these elements accounting for, for example, at least 50 wt%, at least 60 wt%, at least 70 wt%, at least 80 wt%, at least 90 wt%, at least 95 wt%, at least 99 wt%, or at least 99.5 wt% of the composite fiber.
[0040] In some embodiments, the composite fiber has a value for Formula 1 below of at least 77, at least 78, at least 79, or at least 80, wherein X is an average silicon crystallite size in the Si phase in nm and Y is the percent by weight of the C phase based on a total weight of the composite fiber:
85.634*X/(X+0.0824*(62.79-Y)) Formula 1
[0041] In some embodiments, the composite fiber has a value for Formula 2 below of at least 1200, at least 1300, at least 1400, at least 1500, at least 1800, or at least 2000, wherein Y is the percent by weight of the C phase based on a total weight of the composite fiber and Z is the percent by weight of elemental silicon in the Si phase:
31.486*(100-Y)*Z/100 Formula 2
[0042] In some embodiments, the composite fiber includes an Si phase having at least 90 wt% of crystalline silicon having an average crystallite size of 20 to 40 nm and a C phase comprising 20 to 45 wt% of the composite fiber. An anode including this composite fiber may be able to provide a 1 SDC of greater than 1800 mAh/g and an FCE of greater than 78%.
[0043] In some embodiments, the composite fiber includes an Si phase having 75-90 wt% of crystalline silicon having an average crystallize size of 20 to 45 nm and a C phase comprising 32 to 50 wt% of the composite fiber. An anode including this composite fiber may be able to provide a 1SDC of greater than 1300 mAh/g, an FCE of greater than 78%, and a tenth cycle Coulombic efficiency (10CE) of greater than 98.7%.
[0044] According to embodiments of the present disclosure, the FCE is improved by forming the composite fiber of intertwined Si-C domains. It can be expected that the specific capacity reduces to the minimum at 100% carbon (about 372 mAh/g if the carbon is pure graphite and even less if the carbon is carbon black). Therefore, it is important to balance the FCE and capacity by appropriately adjusting the infiltration amount of carbon, especially in the full cell or battery design.
[0045] The amount of carbon that can be infiltrated into the PSFT is generally limited by a pore volume of the PSFT, i.e., the void space accessible to the carbon. Higher pore volume allows more carbon to infiltrate, thus resulting in a higher possible carbon content.
[0046] As carbon or silicon is infiltrated into the PSFT or carbon fiber, the total volume of the formed Si-C composite is not changed relative to the original PSFT or carbon fiber template. However, the FCE is significantly improved and the charging and discharging volumetric capacity of a single fiber is increased. As such, the composite Si-C fibers are able to provide superior properties as compared with simple mixtures of Si fiber and carbon materials (e.g., carbon black or graphite).
[0047] Without being bound by theory, this is believed to be at least in part due to the electron and lithium ion transport and diffusion rate being improved because of the interconnected carbon network in the fiber. Electrons and lithium ions have a higher diffusion rate in carbon than silicon. The interconnected carbon network in the composite fiber facilitates the transport of electrons and lithium ions from an outer surface of the composite fiber to the
interior of the composite fiber or the transport from the interior of the composite fiber to the outer surface of the composite fiber. Therefore, the number of electrons and lithium ions as well as their transport rate increases with the carbon content in the fiber.
[0048] The diffusion rate improvement also reduces the exposure time of tension stress buildup on the surface of the Si domain in the delithiation step, which helps avoid the cracking of silicon domains. The diffusion rate improvement also helps reduce the exposure time of tension stress buildup of the fiber surface in the delithiation step, and thus avoids the cracking of the fiber surface.
[0049] In some embodiments, the composite fiber may comprise lithium wherein the lithium and at least a portion of the silicon from the Si phase form an LixSi alloy where x is from greater than 0 to 4. In some embodiments, the lithium-containing composite fiber further comprises Li2SiO3. In some embodiments, the lithium-containing composite fiber may be formed by making a nanoporous fibrous structure of one of silicon or carbon, subsequently infiltrating the structure with the other of carbon or silicon, and then reacting the infiltrated structure with a lithium source to form the LixSi alloy. In other embodiments, the lithium-containing composite fiber may be formed by making a nanoporous fibrous structure of silicon, then reacting the structure with a lithium source to form the LixSi alloy, and finally infiltrating the structure with carbon. In yet other embodiments, the lithium-containing composite can be formed by introducing lithium into a Si-C composite fiber to form the LixSi alloy.
[0050] Examples:
[0051] Example 1
[0052] Batches of PSFT were formed using magnesiothermic reduction under varying conditions and each was subsequently infiltrated with carbon. The resulting fibers had compositions as shown in Tables 2 and 3 below. Half-cells were prepared for several of the batches of fibers and the FCE, 5 cycle Coulombic efficiency (5CE), 1SDC, and tenth cycle Coulombic efficiency (10CE) were determined. The results are summarized in Table 4 below.
[0053] TABLE 2
[0056] Blank cells in Tables 2-4 indicate properties that were not measured and/or could not be detected.
[0057] As shown above, by maintaining the desired silicon content, crystallite size, and carbon content, Examples 1-27 each achieved an FCE of at least 78% and a 1SDC of at least 1300 mAh/g. Conversely, Comparative Examples 1 and 2 had very large crystallites and provided an FCE of 75.8% and 62.1%, respectively, and a 1SDC of 1162 and 1057 mAh/g,
respectively. Comparative Example 3 had a low silicon content and poor 1SDC. Comparative Examples 4 and 5 had very high carbon content and insufficient 1 SDC. Comparative Examples 6 and 7 had good 1 SDC but the low carbon content resulted in poor FCE. Comparative Examples 8-18 had small crystallites and/or high carbon content and the resultant 1SDC and/or FCE were insufficient. Comparative Examples 19-32 each had silicon crystallite sizes of below 10 nm and only achieved an FCE of up to 65.5%. FIG. 1 shows the effects of silicon crystallite size on the 1SDC. FIG. 2 shows the effects of silicon content in the composite fiber and the silicon crystallite size on the 10CE.
[0058] Example 2: Heat effect on crystallite size
[0059] Table 5 below summarizes the reduction conditions for select PSFT from Table 2 above. To form the PSFT, a mixture of silica fiber, Mg, and moderator (sodium chloride, alumina beads, and/or tabular alumina) was loaded into a reactor. In particular, Comparative Examples 1-3 used an alumina crucible, Comparative Examples 4, 5, 10-20, and 26-30 and Examples 6, 7, 9, 11, 22, and 26 used a metal crucible, and the remaining examples used a rotary kiln. The reactions were performed in an argon atmosphere and the fibers were washed before being analyzed (analysis results in Table 2). As shown, by controlling the reaction conditions, such as the ratio of moderator to magnesium, the crystallite size can be tailored to fall within the ranges disclosed herein. Select examples are plotted in FIG. 3 to demonstrate the effect of AT on silicon crystallite size.
[0061] Although various embodiments have been shown and described, the disclosure is not limited to such embodiments and will be understood to include all modifications and variations as would be apparent to one of ordinary skill in the art. Therefore, it should be understood that the disclosure is not intended to be limited to the particular forms disclosed; rather, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the disclosure as defined by the appended claims.
Claims
1. A composite fiber comprising: a porous silicon phase comprising elemental silicon; a porous carbon phase comprising elemental carbon; wherein the silicon phase and the carbon phase form an intertwined network structure in the composite fiber such that each of the silicon phase and the carbon phase is interconnected and continuous throughout the composite fiber; wherein the silicon phase comprises at least 75 percent by weight of elemental silicon in the form of silicon crystallites having an average size of 15 to 50 nm; wherein the carbon phase comprises 20 to 60 percent by weight of the composite fiber; and wherein the silicon phase and the carbon phase together constitute at least 50 percent by weight of the composite fiber.
2. The composite fiber of claim 1, wherein the composite fiber has a BET specific surface area of 0.1 to 45 m2/g and a pore volume of greater than 0 to 0.25 cm3/g.
3. The composite fiber of claim 1, wherein the composite fiber has an average pore size of from 5 to 80 nm.
4. The composite fiber of claim 1, wherein the composite fiber has an aspect ratio of fiber length to diameter of at least 3.
5. The composite fiber of claim 1, the silicon phase and the carbon phase together constitute at least 90 percent by weight of the composite fiber.
6. The composite fiber of claim 5, wherein the silicon phase comprises at least 90 percent by weight of elemental silicon, the silicon crystallites have an average size of 20 to 40 nm, and the carbon phase comprises 20 to 45 percent by weight of the composite fiber.
The composite fiber of claim 5, wherein the silicon phase comprises 75 to 90 percent by weight of elemental silicon, the silicon crystallites have an average size of 20 to 45 nm, and the carbon phase comprises 32 to 50 percent by weight of the composite fiber. A method of making the composite fiber of claim 1, comprising: forming a porous fiber template comprising one of carbon or silicon, wherein the porous fiber template comprises one of the silicon phase or the carbon phase; and infiltrating the porous fiber template with the other of carbon or silicon to form an infiltrating phase, wherein the infiltrating phase comprises the other of the silicon phase or the carbon phase. The method of claim 8, wherein the porous fiber template consists essentially of carbon. The method of claim 8, wherein the porous fiber template consists essentially of silicon. The method of claim 8, wherein an average pore diameter of the infiltrating phase is from
0.1 to 5 nm less than an average pore diameter of the porous fiber template. The method of claim 11, wherein infiltrating the porous fiber template comprises chemical vapor deposition, physical vapor deposition, sputtering, atomic layer deposition, or pyrolysis. The method of claim 11, wherein the porous fiber template comprises silicon and forming the porous fiber template comprises: heating a silica precursor fiber in the presence of magnesium and a moderator to a temperature of about 550 °C to about 600 °C, wherein the moderator is present in an amount sufficient to reach a maximum reaction temperature of at least 300 °C; and wherein a weight ratio of the moderator to the magnesium is less than 15.
The method of claim 13, wherein the moderator comprises sodium chloride and the maximum temperature is maintained below 900 °C. The method of claim 8, further comprising reacting the composite fiber with a lithium source to form a LixSi alloy where x is from greater than 0 to 4. An electrode active material comprising the composite fiber of claim 1. An electrode comprising the electrode active material of claim 16, the electrode having a first Coulombic efficiency of at least 78% and a first cycle specific delithiation capacity of at least 1300 mAh/g. The electrode of claim 17, wherein the silicon phase comprises at least 90 percent by weight of elemental silicon, the silicon crystallites have an average size of 20 to 40 nm, and the carbon phase comprises 20 to 45 percent by weight of the composite fiber; and wherein the electrode has a first cycle specific delithiation capacity of at least 1800 mAh/g. The electrode of claim 17, wherein the silicon phase comprises 75 to 90 percent by weight of elemental silicon, the silicon crystallites have an average size of 20 to 45 nm, and the carbon phase comprises 32 to 50 percent by weight of the composite fiber; and wherein the electrode has a tenth cycle Coulombic efficiency of greater than 98.7%. A battery comprising the electrode of claim 16.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2023239324A AU2023239324A1 (en) | 2022-03-21 | 2023-03-21 | Silicon-carbon composite fiber |
US18/189,700 US20230299269A1 (en) | 2022-03-21 | 2023-03-24 | Silicon-carbon composite fiber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202263269652P | 2022-03-21 | 2022-03-21 | |
US63/269,652 | 2022-03-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US18/189,700 Continuation US20230299269A1 (en) | 2022-03-21 | 2023-03-24 | Silicon-carbon composite fiber |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2023183800A2 true WO2023183800A2 (en) | 2023-09-28 |
WO2023183800A3 WO2023183800A3 (en) | 2023-11-30 |
WO2023183800A9 WO2023183800A9 (en) | 2024-07-11 |
Family
ID=88102179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2023/064763 WO2023183800A2 (en) | 2022-03-21 | 2023-03-21 | Silicon-carbon composite fiber |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2023183800A2 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102637617B1 (en) * | 2015-08-28 | 2024-02-19 | 그룹14 테크놀로지스, 인코포레이티드 | Novel materials with extremely durable intercalation of lithium and manufacturing methods thereof |
KR102701081B1 (en) * | 2018-10-25 | 2024-09-04 | 삼성전자주식회사 | Porous silicon-containing composite, carbon composite using the same, and electrode, lithium battery, and electronic device each including the same |
CN113767486A (en) * | 2019-02-27 | 2021-12-07 | 思攀气凝胶公司 | Carbon aerogel-based electrode material and manufacturing method thereof |
CA3230230A1 (en) * | 2021-09-02 | 2023-03-09 | Unifrax I Llc | Silicon-carbon composite fiber |
-
2023
- 2023-03-21 WO PCT/US2023/064763 patent/WO2023183800A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2023183800A9 (en) | 2024-07-11 |
WO2023183800A3 (en) | 2023-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101586816B1 (en) | Negative active material for non-aqueous electrolyte rechargeable battery, the preparation method thereof, and rechargeable battery including the same | |
US10797303B2 (en) | Silicon-based anode active material and preparation method therefor | |
EP3965192A1 (en) | Composite negative electrode material and preparation method therefor and lithium battery | |
KR101997665B1 (en) | Anode materials including Silicon nitride and method for manufacturing thereof | |
WO2016141032A1 (en) | Silicon-silicon oxide-lithium composite material having nano silicon particles embedded in a silicon:silicon lithium silicate composite matrix, and a process for manufacture thereof | |
JP2007213825A (en) | Nonaqueous electrolyte secondary battery, anode activator and anode of the same, as well as manufacturing method of nonaqueous electrolyte secondary battery, anode activator, and anode of the same | |
KR102286231B1 (en) | Lithium doped silicon oxide negative active material, method of preparing the same, negative electrode including the same and lithium secondary battery including the same | |
EP0813257A1 (en) | Electrodes for lithium ion batteries using polycarbosilanes | |
KR20200019394A (en) | an anode active material, a method of preparing the anode active material, and Lithium secondary battery comprising an anode including the anode active material | |
KR20200137152A (en) | Silicon nano particle-metal organic framework composite, method of manufacturing the same, and lithium ion battery having the same | |
JP2024519130A (en) | Anode material, its preparation and use | |
KR20170069951A (en) | Negative electrode active material particle and method of preparing for the same | |
KR20040082803A (en) | Negative active material for lithium secondary battery and method of preparing same | |
CN116534839A (en) | Nitrogen-phosphorus co-doped sodium ion battery hard carbon negative electrode material and preparation method thereof | |
US20240088351A1 (en) | Silicon-carbon composite fiber | |
CN117374211A (en) | Batch preparation method and application of honeycomb Si@SiC@C | |
EP0813260A1 (en) | Electrodes for lithium ion batteries using polysilanes | |
KR20230118529A (en) | Lithium-Doped Silicon Oxide Composite Anode Material With High Initial Coulombic Efficiency and Preparation Method Thereof | |
Hernandha et al. | Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li+ Storage Performance, Cycling Stability, and Safety of Si Electrodes | |
US20230299269A1 (en) | Silicon-carbon composite fiber | |
WO2023183800A2 (en) | Silicon-carbon composite fiber | |
JPH11322323A (en) | Carbon compound and its production, and electrode for secondary battery | |
EP0813259A1 (en) | Electrodes for lithium ion batteries using polysilazanes | |
CN111418096A (en) | Silicon-graphite composite electrode active material for lithium secondary battery, electrode comprising same, lithium secondary battery, and method for producing silicon-graphite composite electrode active material | |
CN118201876A (en) | Silicon-carbon composite fiber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 23775842 Country of ref document: EP Kind code of ref document: A2 |
|
WWE | Wipo information: entry into national phase |
Ref document number: AU2023239324 Country of ref document: AU |
|
REG | Reference to national code |
Ref country code: BR Ref legal event code: B01A Ref document number: 112024019383 Country of ref document: BR |