WO2023162505A1 - Dispositif à semi-conducteur, dispositif optique, module optique, dispositif électronique et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur, dispositif optique, module optique, dispositif électronique et procédé de fabrication de dispositif à semi-conducteur Download PDF

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Publication number
WO2023162505A1
WO2023162505A1 PCT/JP2023/001019 JP2023001019W WO2023162505A1 WO 2023162505 A1 WO2023162505 A1 WO 2023162505A1 JP 2023001019 W JP2023001019 W JP 2023001019W WO 2023162505 A1 WO2023162505 A1 WO 2023162505A1
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Prior art keywords
resin material
semiconductor device
present technology
optical
semiconductor
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PCT/JP2023/001019
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English (en)
Japanese (ja)
Inventor
英 大鳥居
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ソニーグループ株式会社
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Publication of WO2023162505A1 publication Critical patent/WO2023162505A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action

Definitions

  • the present technology relates to a semiconductor device, an optical device, an optical module, an electronic device, and a method of manufacturing a semiconductor device.
  • VCSELs Vertical Cavity Surface Emitting Lasers
  • photodiodes resin materials having optical functions such as lenses and diffraction gratings are formed on semiconductor substrates containing GaN. A configuration is used.
  • Patent Document 1 discloses a configuration in which a resin material is formed on a semiconductor substrate.
  • the semiconductor substrate and the resin material have different coefficients of thermal expansion. Therefore, the resin material may peel off from the semiconductor substrate.
  • the main purpose of the present technology is to provide a semiconductor device, an optical device, an optical module, an electronic device, and a method of manufacturing a semiconductor device that improve the adhesion between a semiconductor substrate and a resin material.
  • the present technology includes a first resin material having an optical function, an electrode, an optical element, a semiconductor substrate, and a contact hole formed in the semiconductor substrate and connecting the electrode and the optical element. and wherein at least part of the contact hole is filled with a second resin material.
  • the semiconductor device may further include an adhesive layer for bonding the first resin material and the semiconductor substrate, and the adhesive layer may contain the second resin material.
  • the first resin material and the second resin material may be integrally molded.
  • the contact hole may have a depth of 4 ⁇ m or more.
  • the semiconductor substrate may have a thickness of 10 ⁇ m or more and 200 ⁇ m or less.
  • the optical elements may be arranged multidimensionally. In a side view, the top of the first resin material may be higher than the top of the electrode.
  • the electrodes may be solder bumps.
  • the height of the solder bump may be 0.5 times or more the diameter of the solder bump.
  • the present technology provides an optical device including the semiconductor device and a mounting substrate, wherein the mounting substrate has a recess formed at a position facing the first resin material.
  • the present technology provides an optical module including the semiconductor device.
  • the present technology provides an electronic device including the semiconductor device.
  • the present technology is a method of manufacturing a semiconductor device, which includes at least forming a contact hole in a semiconductor substrate and forming a resin material having an optical function while filling the contact hole. I will provide a.
  • the method further includes forming an electrode on the semiconductor substrate before forming the resin material while filling the contact hole, and forming a coating resin material for coating the electrode, wherein the resin After forming the contact holes while filling the contact holes with a material, etching a portion of the resin material to expose the coating resin material; removing the coating resin material; and shredding.
  • the present technology it is possible to provide a semiconductor device, an optical device, an optical module, an electronic device, and a method of manufacturing a semiconductor device that improve the adhesion between a semiconductor substrate and a resin material.
  • the effects described here are not necessarily limited, and may be any of the effects described in the present disclosure.
  • FIG. 1A is a simplified front view showing a configuration example of a semiconductor device 10 according to an embodiment of the present technology.
  • FIG. 1B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 2A is a simplified front view showing a configuration example as a comparative example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 2B is a simplified side sectional view showing a configuration example as a comparative example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 3A is a simplified front view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 1A is a simplified front view showing a configuration example of a semiconductor device 10 according to an embodiment of the present technology.
  • FIG. 1B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 2A is a simplified front view showing a configuration example as
  • FIG. 3B is a simplified side cross-sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 4A is a simplified front view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 4B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 5A is a simplified front view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 5B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 6 is a perspective view showing a configuration example of a semiconductor device 10 according to an embodiment of the present technology.
  • FIG. 7 is a simplified side cross-sectional view showing a configuration example of an optical device 30 according to an embodiment of the present technology.
  • FIG. 8A is a perspective view showing a configuration example of the optical module 100 according to one embodiment of the present technology.
  • FIG. 8B is a plan view showing a configuration example of the optical module 100 according to one embodiment of the present technology.
  • FIG. 8C is a side sectional view showing a configuration example of the optical module 100 according to one embodiment of the present technology.
  • FIG. 9 is a diagram illustrating a usage example of a semiconductor device according to an embodiment of the present technology as a solid-state imaging device (image sensor).
  • FIG. 10 is a block diagram showing a configuration example of an imaging device as an electronic device to which the present technology is applied.
  • FIG. 11 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system to which a semiconductor device according to an embodiment of the present technology can be applied;
  • FIG. 12 is a block diagram showing an example of functional configurations of the camera head 11102 and CCU 11201 shown in FIG.
  • FIG. 13 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile body control system to which the present technology can be applied.
  • FIG. 14 is a diagram showing an example of the installation position of the imaging unit 12031.
  • FIG. 15 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology;
  • FIG. 15 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology;
  • FIG. 15 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology;
  • FIG. 15 is a flowchart illustrating an
  • FIG. 16 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • FIG. 17 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • FIG. 18 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • FIG. 19 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • FIG. 20 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • FIG. 21 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • substantially parallel means not only being completely parallel, but also being substantially parallel, that is, including a state deviated by, for example, several percent from the completely parallel state.
  • substantially parallel means not only being completely parallel, but also being substantially parallel, that is, including a state deviated by, for example, several percent from the completely parallel state.
  • abbreviations means not only being completely parallel, but also being substantially parallel, that is, including a state deviated by, for example, several percent from the completely parallel state.
  • abbreviations Each figure is a schematic diagram and is not necessarily strictly illustrated.
  • a semiconductor device is formed on a first resin material having an optical function, an electrode, an optical element, a semiconductor substrate, and the semiconductor substrate, and the electrode and the a contact hole for connecting with an optical element, and at least part of the contact hole is filled with a second resin material.
  • FIG. 1A is a simplified front view showing a configuration example of a semiconductor device 10 according to an embodiment of the present technology.
  • FIG. 1B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • a semiconductor device 10 includes a first resin material 11, an electrode 12 (including an electrode 12a and an electrode 12b; the same shall apply hereinafter), an optical element 13, a first compound semiconductor layer 14, A second compound semiconductor layer 15 , a semiconductor substrate 16 , and contact holes 17 are provided.
  • the first resin material 11 has an optical function.
  • the first resin material 11 can, for example, collimate the radiated light emitted from the optical element 13, spread it to a wider angle, or diffract it.
  • the first resin material 11 may be, for example, a lens or a diffraction grating.
  • the height of the first resin material 11 can be approximately 70 ⁇ m. Thereby, the radiated light emitted from the optical element 13 can be collimated.
  • the electrode 12 can be a cathode electrode or an anode electrode.
  • the electrodes 12 are preferably solder bumps with self-alignment capability.
  • Solder bumps 12 may be formed by solder balls being mounted on semiconductor substrate 16 and melted.
  • the solder balls are made of, for example, gold tin (AuSn), tin silver (SnAg), tin silver copper (SnAgCu) alloy, or the like. Since the solder bumps 12 are formed, self-alignment mounting using the surface tension of solder is performed in the manufacturing process of the semiconductor device 10, and alignment can be performed easily and reliably in units of ⁇ m.
  • the size of the electrodes 12 can be about ⁇ 50 ⁇ m.
  • solder bumps 12 are formed for one optical element 13 .
  • the solder bumps 12 are formed on the four corners of the semiconductor device 10, but the solder bumps 12 may be formed on any two of the four corners. Thereby, electric signals of the anode and the cathode can be acquired.
  • solder bumps 12 are formed for one optical element 13 .
  • the solder bumps 12 are formed on the four corners of the semiconductor device 10, but the solder bumps 12 may be formed on any three of the four corners. This makes it possible to easily and reliably perform alignment in the vertical and horizontal directions in FIG. 1A.
  • the optical element 13 emits or receives light.
  • the optical element 13 can be a light emitting element that emits light. At this time, the light emission angle may be about 25 degrees in full angle.
  • the optical element 13 can be a light receiving element that receives light.
  • the optical element 13 is connected to the electrode 12 via wiring 18 .
  • the optical element 13 may have a mesa structure.
  • the width (diameter) of the optical element 13 is not particularly limited, it can be, for example, about 10 ⁇ m.
  • the height of the optical element 13 is not particularly limited, it may be, for example, 30 ⁇ m or less.
  • the spacing between adjacent optical elements 13 can be, for example, about 30 ⁇ m.
  • a plurality of optical elements 13 are formed in this configuration example, one optical element 13 may be formed.
  • a first compound semiconductor layer 14, a second compound semiconductor layer 15, and a semiconductor substrate 16 are arranged and stacked in this order.
  • the first compound semiconductor layer 14 is composed of a compound semiconductor of a first conductivity type (for example, p-type or high-concentration p-type), and the second compound semiconductor layer 15 is of a second conductivity type different from the first conductivity type. (eg, n-type or high-concentration n-type) compound semiconductor.
  • each of the first compound semiconductor layer 14 and the second compound semiconductor layer 15 can be made of an AlInGaN-based compound semiconductor.
  • AlInGaN-based compound semiconductors more specifically, GaN, AlGaN, InGaN, and AlInGaN can be mentioned.
  • these compound semiconductors may optionally contain boron (B) atoms, thallium (Tl) atoms, arsenic (As) atoms, phosphorus (P) atoms, and antimony (Sb) atoms. .
  • Examples of methods for forming the first compound semiconductor layer 14 and the second compound semiconductor layer 15 include metal organic chemical vapor deposition (MOCVD, MOVPE), molecular beam epitaxy (MBE), hydride A vapor phase epitaxy method (HVPE method), an atomic layer deposition method (ALD method), a migration enhanced epitaxy method (MEE method), a plasma assisted physical vapor deposition method (PPD method), etc. are used. Not limited.
  • the semiconductor substrate 16 is, for example, a GaN substrate, a sapphire substrate, a GaAs substrate , a SiC substrate, an alumina substrate, a ZnS substrate, a ZnO substrate , an AlN substrate, a LiMgO substrate, a LiGaO2 substrate, a MgAl2O4 substrate, an InP substrate, a Si substrate, Alternatively, a base layer or a buffer layer may be formed on the surface of these substrates.
  • a contact hole 17 is formed in the first compound semiconductor layer 14 , the second compound semiconductor layer 15 and the semiconductor substrate 16 to connect the electrode 12 and the optical element 13 .
  • the contact hole 17 is a groove extending from the surface of the semiconductor substrate 16 through the first compound semiconductor layer 14 and the second compound semiconductor layer 15 and reaching the semiconductor substrate 16 .
  • the contact hole 17 may be a cathode contact hole or an anode contact hole.
  • the electrode 12a can be a cathode electrode.
  • the electrode 12a can be an anode electrode.
  • the contact hole 17 is a cathode contact hole
  • the cathode electrode 12 a and the optical element 13 are connected through the cathode contact hole 17 .
  • the contact hole 17 is an anode contact hole
  • the anode electrode 12 a and the optical element 13 are connected through the anode contact hole 17 .
  • At least part of the contact hole 17 is filled with a second resin material 19 as shown in FIG. 1B.
  • Each of the first resin material 11 and the second resin material 19 may be the same material or different materials.
  • the first resin material 11 and the second resin material 19 are integrally molded. Thereby, the first resin material 11 having an optical function is firmly fixed to the semiconductor substrate 16 . As a result, the adhesion between the semiconductor substrate 16 and the first resin material 11 can be enhanced, and the separation of the first resin material 11 from the semiconductor substrate 16 can be prevented.
  • the depth of the contact hole 17 is not particularly limited, it is preferably 4 ⁇ m or more, for example. More preferably, contact hole 17 may have a depth of 6 ⁇ m or more. More preferably, contact hole 17 may have a depth of 8 ⁇ m or more.
  • the first resin material 11 is firmly fixed to the semiconductor substrate 16 by filling at least part of the deep contact hole 17 with the second resin material 19 (or the first resin material 11 may be used). can be
  • the thickness of the semiconductor substrate 16 is not particularly limited, it is preferably 10 ⁇ m or more and 200 ⁇ m or less, for example. More preferably, the thickness of the semiconductor substrate 16 may be 30 ⁇ m or more and 200 ⁇ m or less. A contact hole 17 can be deeply formed in the semiconductor substrate 16 having a thickness within this range.
  • the groove 20 is formed around the optical element 13, the groove 20 is generally formed only halfway through the second compound semiconductor layer 15 for reasons of device characteristics and manufacturing method. , insufficient depth. Therefore, even if the groove 20 is filled with the second resin material 19 (or the first resin material 11 ), it is difficult to firmly fix the first resin material 11 to the semiconductor substrate 16 .
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2014-116417
  • Patent Document 1 describes that the groove is formed so that the resin material does not extend beyond the element formation region. However, there is neither description nor suggestion that the groove enhances the adhesion between the semiconductor substrate and the resin material. Further, Patent Document 1 describes that a groove in a trench is filled with a resin material. However, there is neither description nor suggestion that the groove enhances the adhesion between the semiconductor substrate and the resin material.
  • FIG. 2A is a simplified front view showing a configuration example as a comparative example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 2B is a simplified side sectional view showing a configuration example as a comparative example of the semiconductor device 10 according to one embodiment of the present technology.
  • grooves 21 to be filled with the second resin material 19 are formed in the semiconductor substrate 16 separately from the contact holes 17 .
  • the size of the semiconductor device 10 increases.
  • the size of the semiconductor device 10 shown in FIG. 1 is, for example, approximately 350 ⁇ m square
  • the size of the semiconductor device 10 shown in FIG. 2 can be approximately 450 ⁇ m square.
  • the manufacturing cost increases.
  • the parasitic capacitance increases, resulting in a problem of a decrease in response speed.
  • the groove 21 increases the electrical resistance of the electrical path that connects the electrode 12 and the optical element 13, resulting in deterioration of the characteristics. Therefore, it is preferable to fill the contact hole 17 with the second resin material 19 .
  • FIG. 3A is a simplified front view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 3B is a simplified side cross-sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • part of the contact hole 17 is filled with the second resin material 19 .
  • the second resin material 19 is filled inside the contact hole 17 (on the side where the optical element 13 is arranged). Even with such a configuration example, the adhesion between the semiconductor substrate 16 and the first resin material 11 can be enhanced.
  • FIG. 4A is a simplified front view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 4B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • At least one of the plurality of contact holes 17 is filled with the second resin material 19 .
  • the adhesion between the semiconductor substrate 16 and the first resin material 11 can be enhanced.
  • part of the contact hole 17 is filled with the second resin material 19 , but the entire contact hole 17 may be filled with the second resin material 19 .
  • FIG. 5A is a simplified front view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • FIG. 5B is a simplified side sectional view showing a configuration example of the semiconductor device 10 according to one embodiment of the present technology.
  • the semiconductor device 10 includes a bonding layer 22 that bonds the first resin material 11 and the semiconductor substrate 16 together.
  • the adhesive layer 22 contains the second resin material 19 . At least part of the contact hole 17 is filled with the second resin material 19 . Thereby, the semiconductor substrate 16 and the first resin material 11 are adhered via the adhesive layer 22 . As a result, the adhesion between the semiconductor substrate 16 and the first resin material 11 is enhanced.
  • the material of the adhesive layer 22 is not particularly limited.
  • the optical elements 13 may be arranged multidimensionally. This will be described with reference to FIG.
  • FIG. 6 is a perspective view showing a configuration example of a semiconductor device 10 according to an embodiment of the present technology. As shown in FIG. 6, in the semiconductor device 10, the optical elements 13 are arranged in a multidimensional manner. Although the optical elements 13 are arranged two-dimensionally in this configuration example, they may be arranged three-dimensionally, for example.
  • the optical elements 13 that are multidimensionally arranged may emit light with different wavelengths.
  • Each optical element 13 can emit, for example, blue light, green light, and red light.
  • Each optical element 13 may be mounted on one semiconductor substrate 16, for example.
  • the top of the first resin material 11 is formed higher than the top of the electrode 12 in a side view. Accordingly, when the first resin material 11 is, for example, a wide-angle lens, the light emitted from the first resin material 11 can be prevented from being shielded by the electrode 12 .
  • the electrodes 12 are preferably solder bumps having a self-alignment function. This facilitates alignment.
  • the height of the solder bumps 12 is preferably 0.5 times or more the diameter of the solder bumps 12 .
  • the diameter of the solder bump 12 is, for example, ⁇ 30 ⁇ m, the height of the solder bump 12 can be 15 ⁇ m or more. Even with the solder bumps 12 having such a size, since the top of the first resin material 11 is formed higher than the top of the solder bump 12, the light emitted from the first resin material 11 is Shielding by the solder bumps 12 can be prevented.
  • the cross section of the solder bump 12 does not have to be a perfect circle. Even if the cross section of the solder bump 12 is, for example, elliptical or dome-shaped, the height of the solder bump 12 should be 0.5 times or more the diameter of the solder bump 12 .
  • the present technology includes the semiconductor device 10 of any one of the first to sixth embodiments and a mounting substrate, and the mounting substrate has a recess formed at a position facing the first resin material.
  • An optical device is provided. This optical device will be described with reference to FIG.
  • FIG. 7 is a simplified side cross-sectional view showing a configuration example of an optical device 30 according to an embodiment of the present technology.
  • the optical device 30 includes the semiconductor device 10 of any one of the first to sixth embodiments and a mounting substrate 31.
  • the mounting substrate 31 includes a wiring layer 32 , a substrate 33 , a third resin material 34 having an optical function, and electrodes 35 .
  • the third resin material 34 having an optical function does not necessarily have to be made of a resin material, and may be made of, for example, glass or quartz. Alternatively, it may be integrally molded from the substrate 33 itself.
  • a circuit may be formed on the substrate 33 .
  • the mounting substrate 31 and the semiconductor device 10 are connected via the wiring layer 32 and the electrodes 12 .
  • the electrodes 35 are connected to other mounting substrates (not shown). As a result, a plurality of semiconductor devices 10 having different functions can be mounted on one mounting substrate 31 at high density.
  • a concave portion 36 is formed in the mounting substrate 31 at a position facing the first resin material 11 . Thereby, even if the top of the first resin material 11 is formed higher than the top of the electrode 12, the mounting board 31 and the semiconductor device 10 can be connected.
  • optical device according to the seventh embodiment of the present technology can be applied to other embodiments of the present technology as long as there is no particular technical contradiction.
  • FIG. 8A is a perspective view showing a configuration example of the optical module 100 according to one embodiment of the present technology.
  • FIG. 8B is a plan view showing a configuration example of the optical module 100 according to one embodiment of the present technology.
  • FIG. 8C is a side sectional view showing a configuration example of the optical module 100 according to one embodiment of the present technology.
  • substrates 101 are arranged to form the meridians of the sphere (earth).
  • the optical module 100 is configured in a shape like a lantern that is slightly flattened vertically. That is, the substrate 101 is arranged so as to wind around a spherical (substantially spherical) base member that is slightly flattened vertically. As a result, a substantially spherical optical module 100 is configured such that the strip regions 102 of the substrate 101 form meridians. In order to avoid complication of the drawing, the wiring for connecting the semiconductor devices 10 is omitted from the illustration.
  • the semiconductor device 10 is arranged on the substrate 101 with the lens facing outward. Accordingly, the optical module 100 can be used as, for example, a LiDAR (Light Detection and Ranging) scanner.
  • a LiDAR Light Detection and Ranging
  • a substrate 101 on which a semiconductor device 10 is arranged is attached and fixed to a base member having a curved surface such as a convex shape or a spherical shape. Positioning can be performed, for example, by providing a hole in the substrate 101, providing a protrusion in the base member, and fitting and positioning. Alternatively, holes may be provided in both the substrate 101 and the base member, and positioning and fixing may be performed using positioning pins. As a result, the optical axis of the lens of the semiconductor device 10 is oriented perpendicular to the curved surface. As a result, each semiconductor device 10 can perform distance measurement in the corresponding direction.
  • the main specifications of the optical module 100 such as the ranging angle and resolution can be freely set by changing the mounting positions and pitches of the semiconductor devices 10 . For example, some directions can be set with high resolution and some directions can be set with low resolution.
  • the optical module 100 having a high resolution of 1° or less, for example.
  • a large number of semiconductor devices 10 are required for the optical module 100 having a high resolution of 1° or less, for example.
  • the semiconductor devices 10 are mounted at intervals of 10° (36 lines) in the H (Horizontal) direction and at intervals of 3.6° (50 pieces) in the V (Vertical) direction, and the mounting position is offset by 0.1° and rotated. let it scan.
  • the optical module 100 may be an embodiment in which the substrate 101 is mounted on an umbrella frame-shaped base member.
  • the semiconductor devices 10 are mounted at intervals of 90° in the H direction (4 lines) and at intervals of 6° in the V direction (30 pieces), and the mounting position is offset by 1.5° and rotated and scanned.
  • the angle of the framework is changed by 0.1° for each rotation, the number of semiconductor devices 10 can be reduced to 120 (4 ⁇ 30).
  • the shape of the optical module 100 is not limited to this lantern shape.
  • the shape of the optical module 100 may be straight, radial, spiral, or zigzag, for example.
  • optical module according to the eighth embodiment of the present technology can be applied to other embodiments of the present technology as long as there is no particular technical contradiction.
  • the present technology provides electronic equipment including the semiconductor device 10 of any one of the first to sixth embodiments.
  • An electronic device according to an embodiment of the present technology will be described in detail below.
  • FIG. 9 is a diagram illustrating a usage example of a semiconductor device according to an embodiment of the present technology as a solid-state imaging device (image sensor).
  • a semiconductor device can be used, for example, in various cases of sensing light such as visible light, infrared light, ultraviolet light, and X-rays as follows. That is, as shown in FIG. 9, for example, the field of appreciation for photographing images to be used for viewing, the field of transportation, the field of home appliances, the field of medicine/health care, the field of security, the field of beauty, the field of sports, and the like.
  • the semiconductor device of any one of the first to sixth embodiments can be used for devices (for example, the electronic devices described above) used in the fields of agriculture, agriculture, and the like.
  • the first to sixth implementations are applied to devices for taking images for viewing, such as digital cameras, smartphones, and mobile phones with camera functions.
  • a semiconductor device of any one embodiment of the form can be used.
  • in-vehicle sensors that capture images of the front, back, surroundings, and interior of a vehicle, and monitor running vehicles and roads for safe driving such as automatic stopping and recognition of the driver's condition.
  • a semiconductor device may be used in a device used for transportation, such as a surveillance camera that measures distance between vehicles, a distance measuring sensor that measures distance between vehicles, etc. can be done.
  • devices used in home appliances such as television receivers, refrigerators, air conditioners, etc.
  • devices used in home appliances such as television receivers, refrigerators, air conditioners, etc.
  • the semiconductor device of any one embodiment of the sixth embodiment can be used.
  • the first to sixth implementations are applied to devices used for medical care and health care, such as endoscopes and devices that perform angiography by receiving infrared light.
  • devices used for medical care and health care such as endoscopes and devices that perform angiography by receiving infrared light.
  • a semiconductor device of any one embodiment of the form can be used.
  • the semiconductor device of any one of the first to sixth embodiments is used in security devices such as surveillance cameras for crime prevention and cameras for person authentication.
  • the device can be used.
  • any one of the first to sixth embodiments can be applied to a device used for beauty, such as a skin measuring instrument for photographing the skin or a microscope for photographing the scalp.
  • a device used for beauty such as a skin measuring instrument for photographing the skin or a microscope for photographing the scalp.
  • morphology of the semiconductor device can be used.
  • the semiconductor device of any one of the first to sixth embodiments is used in devices used for sports, such as action cameras and wearable cameras for sports. can do.
  • the semiconductor device of any one of the first to sixth embodiments is used in equipment used for agriculture, such as a camera for monitoring the state of fields and crops. can be used.
  • the semiconductor device is, for example, an imaging device such as a digital still camera or a digital video camera, a mobile phone with an imaging function, or a It can be applied to various electronic devices such as other devices.
  • an imaging device such as a digital still camera or a digital video camera
  • a mobile phone with an imaging function or a It can be applied to various electronic devices such as other devices.
  • FIG. 10 is a block diagram showing a configuration example of an imaging device as an electronic device to which this technology is applied.
  • the imaging device 201c shown in FIG. 10 includes an optical system 202c, a shutter device 203c, a solid-state imaging device 204c, a drive circuit (control circuit) 205c, a signal processing circuit 206c, a monitor 207c, and a memory 208c. and moving images.
  • the optical system 202c is configured with one or more lenses, guides the light (incident light) from the subject to the solid-state imaging device 204c, and forms an image on the light-receiving surface of the solid-state imaging device 204c.
  • the shutter device 203c is arranged between the optical system 202c and the solid-state imaging device 204c, and controls the light irradiation period and the light blocking period for the solid-state imaging device 204c according to the control of the driving circuit (control circuit) 205c.
  • the solid-state imaging device 204c accumulates signal charges for a certain period of time according to the light imaged on the light receiving surface via the optical system 202c and the shutter device 203c.
  • the signal charges accumulated in the solid-state imaging device 204c are transferred according to a driving signal (timing signal) supplied from a driving circuit (control circuit) 205c.
  • a drive circuit (control circuit) 205c outputs drive signals for controlling the transfer operation of the solid-state imaging device 204c and the shutter operation of the shutter device 203c to drive the solid-state imaging device 204c and the shutter device 203c.
  • the signal processing circuit 206c performs various signal processing on the signal charges output from the solid-state imaging device 204c.
  • An image (image data) obtained by the signal processing performed by the signal processing circuit 206c is supplied to the monitor 207c for display or supplied to the memory 208c for storage (recording).
  • FIG. 1 An application example of a semiconductor device to which the present technology is applied]
  • An application example of a semiconductor device (solid-state imaging device) according to an embodiment of the present technology will be described below.
  • a semiconductor device according to an embodiment of the present technology can be applied to electronic devices in various fields.
  • an endoscopic surgery system application example 1
  • a moving object application example 2
  • the above [8. Usage Example of Semiconductor Device to which Present Technology is Applied] is also one of application examples of the semiconductor device (solid-state imaging device) according to an embodiment of the present technology.
  • a semiconductor device according to an embodiment of the present technology can be applied to various products.
  • a semiconductor device according to an embodiment of the present technology may be applied to an endoscopic surgery system.
  • FIG. 11 is a diagram illustrating an example of a schematic configuration of an endoscopic surgery system to which a semiconductor device according to an embodiment of the present technology can be applied;
  • FIG. 11 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000 .
  • an endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as a pneumoperitoneum tube 11111 and an energy treatment instrument 11112, and a support arm device 11120 for supporting the endoscope 11100. , and a cart 11200 loaded with various devices for endoscopic surgery.
  • An endoscope 11100 is composed of a lens barrel 11101 whose distal end is inserted into the body cavity of a patient 11132 and a camera head 11102 connected to the proximal end of the lens barrel 11101 .
  • an endoscope 11100 configured as a so-called rigid scope having a rigid lens barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel. good.
  • the tip of the lens barrel 11101 is provided with an opening into which the objective lens is fitted.
  • a light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel 11101 by a light guide extending inside the lens barrel 11101, where it reaches the objective. Through the lens, the light is irradiated toward the observation object inside the body cavity of the patient 11132 .
  • the endoscope 11100 may be a straight scope, a perspective scope, or a side scope.
  • An optical system and an imaging element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the imaging element by the optical system.
  • the imaging element photoelectrically converts the observation light to generate an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image.
  • the image signal is transmitted to a camera control unit (CCU: Camera Control Unit) 11201 as RAW data.
  • CCU Camera Control Unit
  • the CCU 11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and controls the operations of the endoscope 11100 and the display device 11202 in an integrated manner. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing such as development processing (demosaicing) for displaying an image based on the image signal.
  • CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under the control of the CCU 11201 .
  • the light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), for example, and supplies the endoscope 11100 with irradiation light for photographing a surgical site or the like.
  • a light source such as an LED (Light Emitting Diode), for example, and supplies the endoscope 11100 with irradiation light for photographing a surgical site or the like.
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204 .
  • the user inputs an instruction or the like to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100 .
  • the treatment instrument control device 11205 controls driving of the energy treatment instrument 11112 for tissue cauterization, incision, blood vessel sealing, or the like.
  • the pneumoperitoneum device 11206 inflates the body cavity of the patient 11132 for the purpose of securing the visual field of the endoscope 11100 and securing the operator's working space, and injects gas into the body cavity through the pneumoperitoneum tube 11111. send in.
  • the recorder 11207 is a device capable of recording various types of information regarding surgery.
  • the printer 11208 is a device capable of printing various types of information regarding surgery in various formats such as text, images, and graphs.
  • the light source device 11203 that supplies the endoscope 11100 with irradiation light for photographing the surgical site can be composed of, for example, a white light source composed of an LED, a laser light source, or a combination thereof.
  • a white light source is configured by a combination of RGB laser light sources
  • the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. It can be carried out.
  • the observation target is irradiated with laser light from each of the RGB laser light sources in a time division manner, and by controlling the drive of the imaging device of the camera head 11102 in synchronization with the irradiation timing, each of RGB can be handled. It is also possible to pick up images by time division. According to the method, a color image can be obtained without providing a filter in the imaging device.
  • the driving of the light source device 11203 may be controlled so as to change the intensity of the output light every predetermined time.
  • the drive of the imaging device of the camera head 11102 in synchronism with the timing of the change in the intensity of the light to obtain an image in a time-division manner and synthesizing the images, a high dynamic A range of images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissues, by irradiating light with a narrower band than the irradiation light (i.e., white light) during normal observation, the mucosal surface layer So-called NarrowBand Imaging is performed in which a predetermined tissue such as a blood vessel is imaged with high contrast.
  • fluorescence observation may be performed in which an image is obtained from fluorescence generated by irradiation with excitation light.
  • the body tissue is irradiated with excitation light and the fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is A fluorescence image can be obtained by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 can be configured to be able to supply narrowband light and/or excitation light corresponding to such special light observation.
  • FIG. 12 is a block diagram showing an example of functional configurations of the camera head 11102 and CCU 11201 shown in FIG.
  • the camera head 11102 has a lens unit 11401, an imaging section 11402, a drive section 11403, a communication section 11404, and a camera head control section 11405.
  • the CCU 11201 has a communication section 11411 , an image processing section 11412 and a control section 11413 .
  • the camera head 11102 and the CCU 11201 are communicably connected to each other via a transmission cable 11400 .
  • a lens unit 11401 is an optical system provided at a connection with the lens barrel 11101 . Observation light captured from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401 .
  • a lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the imaging unit 11402 is composed of an imaging device (imaging device).
  • the imaging device constituting the imaging unit 11402 may be one (so-called single-plate type) or plural (so-called multi-plate type).
  • image signals corresponding to RGB may be generated by each image pickup element, and a color image may be obtained by synthesizing the image signals.
  • the imaging unit 11402 may be configured to have a pair of imaging elements for respectively acquiring right-eye and left-eye image signals corresponding to 3D (Dimensional) display.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the living tissue in the surgical site.
  • a plurality of systems of lens units 11401 may be provided corresponding to each imaging element.
  • the imaging unit 11402 does not necessarily have to be provided in the camera head 11102 .
  • the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under control from the camera head control unit 11405 . Thereby, the magnification and focus of the image captured by the imaging unit 11402 can be appropriately adjusted.
  • the communication unit 11404 is composed of a communication device for transmitting and receiving various information to and from the CCU 11201.
  • the communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400 .
  • the communication unit 11404 receives a control signal for controlling driving of the camera head 11102 from the CCU 11201 and supplies it to the camera head control unit 11405 .
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and/or information to specify the magnification and focus of the captured image. Contains information about conditions.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately designated by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. good.
  • the endoscope 11100 is equipped with so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
  • the camera head control unit 11405 controls driving of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is composed of a communication device for transmitting and receiving various information to and from the camera head 11102 .
  • the communication unit 11411 receives image signals transmitted from the camera head 11102 via the transmission cable 11400 .
  • the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102 .
  • Image signals and control signals can be transmitted by electrical communication, optical communication, or the like.
  • the image processing unit 11412 performs various types of image processing on the image signal, which is RAW data transmitted from the camera head 11102 .
  • the control unit 11413 performs various controls related to imaging of the surgical site and the like by the endoscope 11100 and display of the captured image obtained by imaging the surgical site and the like. For example, the control unit 11413 generates control signals for controlling driving of the camera head 11102 .
  • control unit 11413 causes the display device 11202 to display a captured image showing the surgical site and the like based on the image signal that has undergone image processing by the image processing unit 11412 .
  • the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 detects the shape, color, and the like of the edges of objects included in the captured image, thereby detecting surgical instruments such as forceps, specific body parts, bleeding, mist during use of the energy treatment instrument 11112, and the like. can recognize.
  • the control unit 11413 may use the recognition result to display various types of surgical assistance information superimposed on the image of the surgical site. By superimposing and presenting the surgery support information to the operator 11131, the burden on the operator 11131 can be reduced and the operator 11131 can proceed with the surgery reliably.
  • a transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable compatible with electrical signal communication, an optical fiber compatible with optical communication, or a composite cable of these.
  • wired communication is performed using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.
  • the present technology can be applied to the endoscope 11100, the camera head 11102 (the imaging unit 11402 thereof), and the like among the configurations described above.
  • the semiconductor device according to an embodiment of the present technology can be applied to the imaging unit 10402 .
  • the endoscope 11100, the camera head 11102 (the imaging unit 11402 thereof) and the like can be improved in functionality.
  • an endoscopic surgery system has been described as an example, but the present technology may also be applied to other systems such as a microsurgery system.
  • a semiconductor device is mounted on any type of moving object such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility vehicle, an airplane, a drone, a ship, a robot, or the like. may be implemented as a device that
  • FIG. 13 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the present technology can be applied.
  • a vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001.
  • the vehicle control system 12000 includes a driving system control unit 12010, a body system control unit 12020, a vehicle exterior information detection unit 12030, a vehicle interior information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio/image output unit 12052, and an in-vehicle network I/F (interface) 12053 are illustrated.
  • the drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs.
  • the driving system control unit 12010 includes a driving force generator for generating driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism to adjust and a brake device to generate braking force of the vehicle.
  • the body system control unit 12020 controls the operation of various devices equipped on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, winkers or fog lamps.
  • body system control unit 12020 can receive radio waves transmitted from a portable device that substitutes for a key or signals from various switches.
  • the body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, etc. of the vehicle.
  • the vehicle exterior information detection unit 12030 detects information outside the vehicle in which the vehicle control system 12000 is installed.
  • the vehicle exterior information detection unit 12030 is connected with an imaging section 12031 .
  • the vehicle exterior information detection unit 12030 causes the imaging unit 12031 to capture an image of the exterior of the vehicle, and receives the captured image.
  • the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as people, vehicles, obstacles, signs, or characters on the road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of received light.
  • the imaging unit 12031 can output the electric signal as an image, and can also output it as distance measurement information.
  • the light received by the imaging unit 12031 may be visible light or non-visible light such as infrared rays.
  • the in-vehicle information detection unit 12040 detects in-vehicle information.
  • the in-vehicle information detection unit 12040 is connected to, for example, a driver state detection section 12041 that detects the state of the driver.
  • the driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 detects the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing off.
  • the microcomputer 12051 calculates control target values for the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and controls the drive system control unit.
  • a control command can be output to 12010 .
  • the microcomputer 12051 realizes the functions of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc. Cooperative control can be performed for the purpose of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc. Cooperative control can be performed for the purpose of ADAS (Advanced Driver Assistance System) including collision avoidance or shock mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, etc. based on the information about the vehicle surroundings acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, so that the driver's Cooperative control can be performed for the purpose of autonomous driving, etc., in which vehicles autonomously travel without depending on operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the information detection unit 12030 outside the vehicle.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the vehicle exterior information detection unit 12030, and performs cooperative control aimed at anti-glare such as switching from high beam to low beam. It can be carried out.
  • the audio/image output unit 12052 transmits at least one of audio and/or image output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
  • the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
  • FIG. 14 is a diagram showing an example of the installation position of the imaging unit 12031.
  • the vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose of the vehicle 12100, the side mirrors, the rear bumper, the back door, and the upper part of the windshield in the vehicle interior, for example.
  • An image pickup unit 12101 provided in the front nose and an image pickup unit 12105 provided above the windshield in the passenger compartment mainly acquire images in front of the vehicle 12100 .
  • Imaging units 12102 and 12103 provided in the side mirrors mainly acquire side images of the vehicle 12100 .
  • An imaging unit 12104 provided in the rear bumper or back door mainly acquires an image behind the vehicle 12100 .
  • Forward images acquired by the imaging units 12101 and 12105 are mainly used for detecting preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, and the like.
  • FIG. 14 shows an example of the imaging range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
  • the imaging range 12114 The imaging range of an imaging unit 12104 provided in the rear bumper or back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 viewed from above can be obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.
  • the microcomputer 12051 determines the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and changes in this distance over time (relative velocity with respect to the vehicle 12100). , it is possible to extract, as the preceding vehicle, the closest three-dimensional object on the course of the vehicle 12100, which runs at a predetermined speed (for example, 0 km/h or more) in substantially the same direction as the vehicle 12100. can. Furthermore, the microcomputer 12051 can set the inter-vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including following stop control) and automatic acceleration control (including following start control). In this way, cooperative control can be performed for the purpose of automatic driving in which the vehicle autonomously travels without depending on the operation of the driver.
  • automatic brake control including following stop control
  • automatic acceleration control including following start control
  • the microcomputer 12051 converts three-dimensional object data related to three-dimensional objects to other three-dimensional objects such as motorcycles, ordinary vehicles, large vehicles, pedestrians, and utility poles. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into those that are visible to the driver of the vehicle 12100 and those that are difficult to see. Then, the microcomputer 12051 judges the collision risk indicating the degree of danger of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, an audio speaker 12061 and a display unit 12062 are displayed. By outputting an alarm to the driver via the drive system control unit 12010 and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be performed.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not the pedestrian exists in the captured images of the imaging units 12101 to 12104 .
  • recognition of a pedestrian is performed by, for example, a procedure for extracting feature points in images captured by the imaging units 12101 to 12104 as infrared cameras, and performing pattern matching processing on a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian.
  • the audio image output unit 12052 outputs a rectangular outline for emphasis to the recognized pedestrian. is superimposed on the display unit 12062 . Also, the audio/image output unit 12052 may control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.
  • the semiconductor device according to an embodiment of the present technology may be applied to, for example, the imaging unit 12031 among the configurations described above. Specifically, the semiconductor device according to an embodiment of the present technology can be applied to the imaging unit 12031. Application of the present technology to the imaging unit 12031 can contribute to higher functionality.
  • the above description of the electronic device according to the ninth embodiment of the present technology can be applied to other embodiments of the present technology as long as there is no particular technical contradiction.
  • the present technology provides a method of manufacturing a semiconductor device, which includes at least forming a contact hole in a semiconductor substrate and forming a resin material having an optical function while filling the contact hole. do.
  • FIG. 15 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • step S11 contact holes are formed in the semiconductor substrate.
  • FIG. 16 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • a contact hole 17 is formed in a semiconductor substrate 16 as shown in FIG.
  • a covering resin material 23 for covering the electrodes 12 is formed on the electrodes 12 .
  • the coating resin material 23 can be a cylinder with a height of 70 ⁇ m. This can prevent the formation of the resin material around the electrodes 12 when forming the resin material having an optical function.
  • FIG. 17 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • the contact hole 17 is filled with the resin material 11 having an optical function by, for example, imprinting.
  • a UV curable resin or the like can be used as the resin material 11 . This makes it possible to improve the adhesion between the semiconductor substrate 16 and the resin material 11, as described above.
  • By covering the electrodes 12 with the covering resin material 23 it is possible to prevent the resin material 11 from being formed around the electrodes 12 .
  • the height of the coating resin material 23 is 70 ⁇ m
  • the height of the resin material 11 can be, for example, 70 ⁇ m or more and 75 ⁇ m or less.
  • the present technology further includes forming electrodes on the semiconductor substrate before forming the resin material while filling the contact holes, and forming a covering resin material covering the electrodes. forming the contact hole while filling the resin material into the contact hole, etching a part of the resin material to expose the coating resin material; removing the coating resin material; and singulating the semiconductor substrate.
  • FIG. 18 is a flowchart illustrating an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • step S21 electrodes are formed on the semiconductor substrate.
  • the solder bumps can be formed by mounting the solder balls on the semiconductor substrate and melting them.
  • the solder balls are made of, for example, gold tin (AuSn), tin silver (SnAg), tin silver copper (SnAgCu) alloy, or the like.
  • step S22 a coating resin material is formed to cover the electrodes. Since this has been explained in the tenth embodiment, a repeated explanation will be omitted.
  • step S23 contact holes are formed in the semiconductor substrate. Since this has also been explained in the tenth embodiment, a repeated explanation will be omitted.
  • step S24 a resin material having an optical function is formed while filling the contact holes. Since this has also been explained in the tenth embodiment, a repeated explanation will be omitted.
  • step S25 part of the resin material is etched to expose the coating resin material.
  • FIG. 19 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • part of the resin material 11 is etched to expose the covering resin material 23 .
  • the height of the resin material 11 after etching is equal to or less than the height of the covering resin material 23 .
  • the height of the resin material 11 after etching is, for example, 65 ⁇ m or more and 70 ⁇ m or less. sell.
  • step S26 the coating resin material 23 is removed using a solvent such as acetone or ethanol.
  • a solvent such as acetone or ethanol.
  • the covering resin material 23 is removed. Thereby, the electrodes 12 are exposed.
  • step S27 the semiconductor substrate is separated into individual pieces by dicing.
  • FIG. 21 is a simplified side cross-sectional view showing an example of a method for manufacturing a semiconductor device according to an embodiment of the present technology
  • the semiconductor device 10 is singulated. According to the present technology, since many semiconductor devices 10 can be manufactured at once, the efficiency of the manufacturing process is improved.
  • this technique can also take the following structures.
  • a first resin material having an optical function ; an electrode; an optical element; a semiconductor substrate; a contact hole formed in the semiconductor substrate and connecting the electrode and the optical element, A semiconductor device, wherein at least part of the contact hole is filled with a second resin material.
  • [2] further comprising an adhesion layer that adheres the first resin material and the semiconductor substrate; wherein the adhesive layer contains the second resin material, The semiconductor device according to [1].
  • the first resin material and the second resin material are integrally molded, The semiconductor device according to [1] or [2].
  • the depth of the contact hole is 4 ⁇ m or more, The semiconductor device according to any one of [1] to [3].
  • the semiconductor substrate has a thickness of 10 ⁇ m or more and 200 ⁇ m or less.
  • the electrodes are solder bumps; The semiconductor device according to any one of [1] to [7].
  • the height of the solder bump is 0.5 times or more the diameter of the solder bump, The semiconductor device according to [8].
  • a semiconductor device according to any one of [1] to [9]; and a mounting substrate, The optical device according to claim 1, wherein the mounting substrate has a recess formed at a position facing the first resin material.
  • An optical module comprising the semiconductor device according to any one of [1] to [9].
  • An electronic device comprising the semiconductor device according to any one of [1] to [9].

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Abstract

Le but principal de la présente invention est de fournir un dispositif à semi-conducteur pour améliorer l'adhérence entre un substrat semi-conducteur et un matériau de résine.　La présente technologie concerne un dispositif à semi-conducteur (10) comprenant : un premier matériau de résine (11) ayant une fonction optique ; une électrode (12) ; des éléments optiques (13) ; un substrat semi-conducteur (16) ; et des trous de contact (17) qui sont formés dans le substrat semi-conducteur (16) et qui connectent l'électrode (12) et les éléments optiques (13), au moins des parties des trous de contact (17) étant remplies d'un second matériau de résine (19). En outre, la présente technologie concerne un procédé de fabrication d'un dispositif à semi-conducteur (10), ledit procédé comprenant au moins : la formation de trous de contact (17) dans un substrat semi-conducteur (16) ; et la formation des trous de contact (17) tout en remplissant les trous de contact (17) avec un matériau de résine ayant une fonction optique.
PCT/JP2023/001019 2022-02-25 2023-01-16 Dispositif à semi-conducteur, dispositif optique, module optique, dispositif électronique et procédé de fabrication de dispositif à semi-conducteur WO2023162505A1 (fr)

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JP2022027942 2022-02-25

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Citations (5)

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