WO2023162355A1

WO2023162355A1 - Substrate treatment method and substrate treatment device

Info

Publication number: WO2023162355A1
Application number: PCT/JP2022/041192
Authority: WO
Inventors: 光敏佐々木
Original assignee: 株式会社Ｓｃｒｅｅｎホールディングス
Priority date: 2022-02-22
Filing date: 2022-11-04
Publication date: 2023-08-31
Also published as: JP2023122329A; TW202335118A

Abstract

This substrate treatment device collectively holds a layered array of a plurality of substrates, immerses the same in a treatment liquid, and carries out a substrate surface treatment by supplying the treatment liquid and bubbles. In the layered array of substrates, a dummy substrate is inserted in a slot where there has been an omission. The treatment is carried out on the layered body of the plurality of substrates with the inserted dummy substrate. The width of a space present on the surface side of each of the plurality of substrates is constant, and the flow, bubble behaviour, etc. of the treatment liquid in the vicinity of the surface are uniform for all of the plurality of substrates, making it possible to carry out a uniform treatment on all of the plurality of substrates.

Description

Substrate processing method and substrate processing apparatus

The present invention relates to a substrate processing method and a substrate processing apparatus that perform surface processing such as etching with a processing liquid on a plurality of substrates. Substrates to be processed include, for example, semiconductor substrates, liquid crystal display device substrates, flat panel display (FPD) substrates used in organic EL (electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disks. substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

Conventionally, in the manufacturing process of semiconductor devices, substrate processing apparatuses have been used to perform various processes on semiconductor substrates (hereinafter simply referred to as "substrates"). As one of such substrate processing apparatuses, there is known a batch-type substrate processing apparatus in which a processing liquid is stored in a processing tank, and a plurality of substrates are immersed in the processing liquid at once to perform etching processing or the like. ing.

In Patent Document 1, a batch-type substrate processing apparatus can be provided with a processing liquid supply unit that supplies a processing liquid and a bubble supply unit (bubbler) that supplies bubbles to the bottom of a processing tank in which a plurality of substrates are immersed. disclosed. By supplying air bubbles into the processing liquid in addition to supplying the processing liquid, the flow velocity of the processing liquid in the processing bath increases, thereby improving the efficiency of surface processing of the substrate.

JP 2005-244162 A

However, when a plurality of substrates are stacked and arranged and immersed in the processing liquid in the processing tank, the flow of the processing liquid and air bubbles in the vicinity of the surface of the substrate included in the central portion of the stacked array and the flow of air bubbles at the outermost portion of the stacked array. It was different from the flow of the processing liquid and air bubbles in the vicinity of the surface of the substrate located at . That is, the processing conditions are different between the central portion and the endmost portion of the lamination arrangement, and as a result, non-uniform processing is performed on a plurality of substrates.

Also, depending on the processing results in the previous process, some substrates may be thinned out from the stacked array of multiple substrates. Even when the immersion process is performed with some of the substrates missing from the stacked array of multiple substrates, the processing conditions will be different between the substrates near the missing position and the other substrates, resulting in the processing of multiple substrates. was uneven.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of performing uniform processing on all of a plurality of substrates.

In order to solve the above-described problems, a first aspect of the present invention provides a substrate processing method for surface-treating a plurality of substrates with a processing liquid, comprising: a detecting step of detecting an arrangement state of the plurality of substrates; a specifying step of specifying a position into which the dummy substrate is to be inserted in the arrangement of the plurality of substrates based on the arrangement state of the plurality of substrates detected in the specifying step; a treatment step of immersing the inserted plurality of substrates in a treatment liquid stored in a treatment tank to perform surface treatment of the plurality of substrates, wherein the specifying step comprises: surface treatment of each of the plurality of substrates; The position where the dummy substrate is to be inserted is specified so that the width of the space existing in the substrate is constant.

Further, in a second aspect, in the substrate processing method according to the first aspect, the detection step includes a step of detecting the orientation of each of the plurality of substrates and a step of detecting an arrangement interval of the plurality of substrates. ,including.

Further, in a third aspect, in the substrate processing method according to the first or second aspect, in the specifying step, a dummy substrate is inserted so that the dummy substrate is arranged to face one of the surfaces of the plurality of substrates. to identify the location.

In a fourth aspect, in the substrate processing method according to the first or second aspect, in the specifying step, dummy substrates are inserted such that each of the plurality of substrates and the dummy substrates are arranged at equal intervals. to identify the location.

A fifth aspect is the substrate processing method according to any one of the first to fourth aspects, wherein the processing step includes forming a flow of the processing liquid in the processing tank and storing the processing liquid in the processing tank. and C. supplying air bubbles into the treated liquid.

In a sixth aspect, in a substrate processing method for surface-treating a plurality of substrates with a processing liquid, the counter plate is arranged such that the width of the space existing on the surface side of each of the plurality of substrates is constant. a holding step of holding the plurality of substrates by a lifter while being arranged with respect to the plurality of substrates; and a processing step of surface-treating the substrate.

Further, according to a seventh aspect, in the substrate processing method according to the sixth aspect, the opposing plate includes a circular back plate provided on the lifter.

An eighth aspect is the substrate processing method according to the sixth or seventh aspect, wherein the treating step includes forming a flow of the treating solution in the treating bath, and C. providing air bubbles in the liquid.

A ninth aspect is directed to a substrate processing apparatus for surface-treating a plurality of substrates with a processing liquid, comprising: a processing tank for storing the processing liquid; and a processing liquid supply unit for supplying the processing liquid to the processing tank. and a lifter that holds and moves up and down the plurality of substrates and immerses the plurality of substrates in the processing liquid stored in the processing bath, wherein the lifter is present on the surface side of each of the plurality of substrates. The plurality of substrates are held in a state in which the opposing plate is arranged with respect to the plurality of substrates so that the width of the space between them is constant.

Further, according to a tenth aspect, in the substrate processing apparatus according to the ninth aspect, the counter plate includes a circular back plate provided on the lifter.

An eleventh aspect is the substrate processing apparatus according to the ninth or tenth aspect, wherein the opposing plate includes a dummy substrate.

Further, according to a twelfth aspect, the substrate processing apparatus according to any one of the ninth to eleventh aspects further includes a bubble supply section for supplying bubbles to the processing liquid stored in the processing bath.

According to the substrate processing methods according to the first to fifth aspects, in order to specify the position where the dummy substrate is to be inserted so that the width of the space existing on the surface side of each of the plurality of substrates is constant, the plurality of substrates are processed. The processing conditions in the vicinity of the surface of all of the substrates are uniform, and uniform processing can be performed on all of the plurality of substrates.

According to the substrate processing methods according to the sixth to eighth aspects, the counter plate is arranged with respect to the plurality of substrates so that the width of the space existing on the surface side of each of the plurality of substrates is constant. Since the substrates are immersed in the processing liquid stored in the processing tank, the processing conditions in the vicinity of the surfaces of all of the plurality of substrates become uniform, and uniform processing can be performed on all of the plurality of substrates.

According to the substrate processing apparatuses according to the ninth to twelfth aspects, the counter plate is arranged with respect to the plurality of substrates so that the width of the space existing on the surface side of each of the plurality of substrates is constant. Since the substrates are held and immersed in the processing liquid, the processing conditions in the vicinity of the surfaces of all of the plurality of substrates become uniform, and uniform processing can be performed on all of the plurality of substrates.

1 is an illustrative plan view showing the overall configuration of a substrate processing apparatus according to the present invention; FIG. It is a figure which shows the structure of a 1st chemical|medical-solution tank. It is a figure which shows the state which the lifter raised. It is a figure which shows the state which the lifter descended. It is the figure which looked at the nozzle, the dispersion plate, and the punching plate from the bottom part of the processing tank. 3 is a block diagram showing the configuration of a control unit; FIG. 4 is a flow chart showing a processing procedure in the substrate processing apparatus of the first embodiment; FIG. 4 is a diagram for conceptually explaining an example of dummy substrate insertion in the first embodiment; FIG. 7 is a diagram for conceptually explaining another example of dummy substrate insertion in the first embodiment; FIG. 11 is a diagram for conceptually explaining an example of dummy substrate insertion in the second embodiment; It is a figure which shows the back plate of the lifter of 3rd Embodiment. FIG. 11 is a diagram showing a state in which a plurality of substrates are held by the lifter of the third embodiment; FIG. 11 is a diagram for conceptually explaining another example of dummy substrate insertion; FIG. 11 is a diagram for conceptually explaining another example of dummy substrate insertion;

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First embodiment>
FIG. 1 is an illustrative plan view showing the overall configuration of a substrate processing apparatus 100 according to the present invention. The substrate processing apparatus 100 is a batch-type substrate processing apparatus that collectively performs surface treatment of a plurality of substrates W such as semiconductor wafers with a processing liquid. In addition, in FIG. 1 and subsequent figures, the dimensions and numbers of each part are exaggerated or simplified as necessary for easy understanding. Also, in FIG. 1 and subsequent figures, an XYZ orthogonal coordinate system with the Z-axis direction as the vertical direction and the XY plane as the horizontal plane is appropriately attached in order to clarify their directional relationships.

The substrate processing apparatus 100 mainly includes a load port 110 , a substrate processing section 120 , a main transfer robot 130 , a loading/unloading mechanism 140 , a single wafer hand 150 , a transfer mechanism 160 and a horizontal transfer mechanism 170 . The substrate processing apparatus 100 also includes a control section 70 that controls operations of these mechanisms.

The load port 110 is provided at the end of the substrate processing apparatus 100 which is substantially rectangular in plan view. A carrier 111 that accommodates a plurality of substrates (hereinafter simply referred to as “substrates”) W to be processed by the substrate processing apparatus 100 is placed on the load port 110 . A carrier 111 containing unprocessed substrates W is transported by an automatic guided vehicle (AGV, OHT) or the like and placed on a load port 110 . Further, the carrier 111 containing the processed substrates W is also removed from the load port 110 by the automatic guided vehicle.

The carrier 111 is typically a FOUP (front opening unified pod) that houses the substrate W in a closed space. The carrier 111 holds a plurality of substrates W in a horizontal posture (a posture in which the normal line is along the vertical direction) in a state of being stacked and arranged at regular intervals in the vertical direction (Z direction) by a plurality of holding shelves formed inside the carrier 111 . do. The maximum number of sheets that can be accommodated in the carrier 111 is 25 sheets or 50 sheets. In addition to the FOUP, the carrier 111 may be in the form of a SMIF (Standard Mechanical Inter Face) pod or an OC (open cassette) that exposes the housed substrates W to the outside air.

A sensor 112, a pod opener (not shown), and the like are provided at the boundary between the main body of the substrate processing apparatus 100 and the load port 110 . The pod opener opens and closes the front cover of the carrier 111 placed on the load port 110 . The sensor 112 optically detects the number and position of the substrates W housed inside the carrier 111 whose lid is opened by the pod opener.

The substrate processing unit 120 is a main part of the substrate processing apparatus 100 that performs various surface treatments on the substrate W. The substrate processing section 120 includes a plurality of processing baths arranged along the X direction inside the substrate processing apparatus 100 . Specifically, a first chemical bath 121, a first rinse bath 122, a second chemical bath 123, a second rinse bath 124, and a drying processing unit 125 are arranged in order from the (−X) side end of the substrate processing apparatus 100. be done. The first chemical bath 121 and the second chemical bath 123 store the same or different chemical solutions, respectively, and immerse a plurality of substrates W in the chemical solutions collectively to perform chemical treatment such as etching. In addition, the first rinse bath 122 and the second rinse bath 124 each store a rinse solution (typically pure water), and a plurality of substrates W are collectively immersed in the rinse solution for rinsing. conduct.

In this specification, the chemical solution tank and the rinse tank are collectively referred to as the "processing tank". The processing bath stores a processing liquid and immerses the substrate W in the processing liquid to perform surface processing. As used herein, "surface treatment" is a conceptual term including chemical treatment and rinse treatment. In this specification, the term "treatment liquid" is a conceptual term including various chemical solutions and pure water. The chemical includes, for example, a liquid for etching or a liquid for removing particles. Specifically, tetramethylammonium hydroxide (TMAH), SC-1 liquid (ammonium hydroxide a mixed solution of hydrogen peroxide and pure water), SC-2 solution (a mixed solution of hydrochloric acid, hydrogen peroxide and pure water), or phosphoric acid. The chemical solution also includes one diluted with pure water.

In the substrate processing apparatus 100, the first chemical bath 121 and the first rinse bath 122 are paired, and the second chemical bath 123 and the second rinse bath 124 are paired. A first lifter 126, which is a transport mechanism dedicated to the pair of the first chemical tank 121 and the first rinse tank 122, and a transport mechanism dedicated to the pair of the second chemical tank 123 and the second rinse tank 124, A second lifter 127 is provided. The first lifter 126 is movable along the X direction between the first chemical bath 121 and the first rinse bath 122 . The second lifter 127 is movable along the X direction between the second chemical bath 123 and the second rinse bath 124 .

The first lifter 126 holds a plurality of substrates W received from the main transfer robot 130 and immerses the substrates W in the chemical liquid stored in the first chemical liquid tank 121 . After completion of the chemical treatment, the first lifter 126 lifts the substrate W from the first chemical bath 121 and transfers it to the first rinse bath 122 to immerse the substrate W in the rinse liquid stored in the first rinse bath 122 . . After completion of the rinsing process, the first lifter 126 lifts the substrate W from the first rinsing tank 122 and transfers it to the main transfer robot 130 .

Similarly, the second lifter 127 holds a plurality of substrates W received from the main transfer robot 130 and immerses the substrates W in the chemical liquid stored in the second chemical liquid tank 123 . After the chemical treatment is completed, the second lifter 127 lifts the substrate W from the second chemical bath 123 and transfers it to the second rinse bath 124 to immerse the substrate W in the rinse liquid stored in the second rinse bath 124 . . After completing the rinse process, the second lifter 127 lifts the substrate W from the second rinse tank 124 and transfers it to the main transfer robot 130 . The structure of the processing bath will be described later in detail.

The drying processing unit 125 includes a mechanism for reducing the pressure inside the sealed drying chamber to below atmospheric pressure, and a mechanism for supplying an organic solvent (eg, isopropyl alcohol (IPA)) into the drying chamber. The drying processing section 125 stores the substrate W received from the main transfer robot 130 in the drying chamber, supplies an organic solvent to the substrate W to dry the substrate W while reducing the pressure in the drying chamber. The substrate W after the drying process is transferred to the main transfer robot 130 .

The main transport robot 130 transports unprocessed substrates W received from the horizontal transport mechanism 170 to the substrate processing units 120 arranged from the first chemical tank 121 to the drying processing unit 125 . The main transport robot 130 also transfers the processed substrate W received from the substrate processing section 120 to the horizontal transport mechanism 170 .

The main transport robot 130 is horizontally movable along the X direction within a range from the substrate transfer position with the horizontal transport mechanism 170 to the first chemical liquid tank 121 . The main transfer robot 130 also includes a pair of substrate chucks 132 that hold a plurality of substrates W collectively. The main transport robot 130 can collectively grip a plurality of substrates W by narrowing the space between the pair of substrate chucks 132 , and can release the gripping state by widening the space between the substrate chucks 132 . Further, the main transfer robot 130 has a mechanism for raising and lowering the pair of substrate chucks 132 . With such a configuration, the main transport robot 130 can transfer the substrates W to and from the horizontal transfer mechanism 170 , and can also transfer the substrates W to the first lifter 126 and the second lifter 127 . Further, the main transport robot 130 can transfer the substrate W to and from the drying processing section 125 as well.

The loading/unloading mechanism 140 loads unprocessed substrates W into the substrate processing apparatus 100 from the carrier 111 placed on the load port 110, and unloads processed substrates W from the substrate processing apparatus 100 to the carrier 111. . The loading/unloading mechanism 140 includes a batch hand 141 formed by stacking hand elements each capable of holding one substrate W in multiple stages. The installation interval of the plurality of hand elements in the batch hand 141 is the same as the arrangement interval of the substrates W within the carrier 111 . The carry-in/out mechanism 140 includes a mechanism for horizontally moving the batch hand 141 along the X direction, and a mechanism for rotating the batch hand 141 by 90° around an axis along the Y direction.

The loading/unloading mechanism 140 moves along the X direction to the loading/unloading position P1 to allow the batch hand 141 to enter the carrier 111, and batch the plurality of substrates W stored in the carrier 111 in a stacked arrangement. to remove and hold. Then, the loading/unloading mechanism 140 moves the batch hand 141 to the transfer position P2 along the X direction while holding the plurality of substrates W in the batch hand 141, and then moves the batch hand 141 90 degrees around the axis along the Y direction. ° Rotate. As a result, the plurality of substrates W stacked and arranged in a horizontal posture are converted to a standing posture (a posture in which the normal line is along the horizontal direction). The loading/unloading mechanism 140 further moves along the X direction, and the substrates W stacked and arranged in an upright posture and held by the batch hand 141 are transferred from the loading/unloading mechanism 140 to the transfer mechanism 160 .

Conversely, from the transfer mechanism 160, a plurality of substrates W are transferred to the loading/unloading mechanism 140 while being stacked in a standing posture. The loading/unloading mechanism 140 rotates the batch hand 141 holding the substrates W stacked and arranged in an upright posture by 90° about an axis along the Y direction. As a result, the plurality of substrates W stacked and arranged in an upright posture are converted into a horizontal posture. Then, the loading/unloading mechanism 140 moves along the X direction to the loading/unloading position P<b>1 and moves the batch hand 141 holding the substrate W into the carrier 111 to transfer the substrate W to the carrier 111 .

The transfer mechanism 160 transfers the substrate W between the loading/unloading mechanism 140 and the horizontal transport mechanism 170 . The transfer mechanism 160 includes a pair of support shafts 161 that collectively support a plurality of substrates W stacked in an upright posture. The transfer mechanism 160 also includes a mechanism for moving the pair of support shafts 161 up and down.

The transfer mechanism 160 receives a plurality of substrates W stacked and arranged in an upright posture from the loading/unloading mechanism 140 by a pair of support shafts 161 . Then, the transfer mechanism 160 transfers the substrate W received from the loading/unloading mechanism 140 to the horizontal transport mechanism 170 in the upright posture. The transfer mechanism 160 also receives a plurality of substrates W stacked and arranged in an upright posture from the horizontal transport mechanism 170 by a pair of support shafts 161 and transfers the substrates W to the carry-in/out mechanism 140 .

The horizontal transport mechanism 170 includes a mechanism that horizontally transports the substrate W along the Y direction and a mechanism that rotates the substrate W by 90° around an axis along the Z direction. The horizontal transport mechanism 170 rotates the plurality of substrates W received from the loading/unloading mechanism 140 and stacked in an upright posture by 90° about an axis along the Z direction, and rotates the substrates W along the Y direction. It is transported and handed over to the main transport robot 130 . Further, the horizontal transport mechanism 170 rotates the plurality of substrates W received from the main transport robot 130 and stacked in an upright posture by 90° about an axis along the Z direction, and moves the substrates W in the Y direction. , and handed over to the transfer mechanism 160 .

Further, the substrate processing apparatus 100 of this embodiment is provided with a single-wafer hand 150 and a stocker 155 . The stocker 155 stores dummy substrates DW. The dummy substrate DW is a disk-shaped silicon wafer similar to the normal substrate W to be processed, and has the same size and shape as the substrate W. However, pattern formation and film formation are not performed on the dummy substrate DW. That is, the dummy substrate DW is a so-called bare wafer. The single substrate hand 150 holds one dummy substrate DW in a horizontal posture. In addition, the single-wafer hand 150 is configured to be able to move along the Y direction, move up and down along the Z direction, and move back and forth along the X direction.

The single-wafer hand 150 takes out one dummy substrate DW from the stocker 155, holds it, moves along the Y direction to the loading/unloading position P1, and faces the loading/unloading mechanism 140 located at the transfer position P2. do. Then, the single-wafer hand 150 moves forward along the X direction and passes the dummy substrate DW to one of the plurality of hand elements forming the batch hand 141 .

Next, the configuration of the processing tanks provided in the substrate processing section 120 will be described. Here, the first chemical bath 121 will be described as the processing bath, but the other processing baths have the same configuration. FIG. 2 is a diagram showing the configuration of the first chemical tank 121. As shown in FIG. The first chemical bath 121 includes a processing bath 10 that stores the processing liquid, a processing liquid supply unit 30 that supplies the processing liquid to the processing bath 10, a drain unit 40 that discharges the processing liquid from the processing bath 10, and a processing bath. and a bubble supply unit 50 for supplying bubbles into the processing liquid stored in 10 .

The processing tank 10 is a storage container made of a chemical-resistant material such as quartz. The processing bath 10 has a double bath structure including an inner bath 11 in which a processing solution is stored and the substrates W are immersed, and an outer bath 12 formed around the upper end of the inner bath 11 . Each of the inner bath 11 and the outer bath 12 has an upper opening that opens upward. The height of the upper edge of the outer tub 12 is higher than the height of the upper edge of the inner tub 11 . When the processing liquid is further supplied from the processing liquid supply unit 30 while the processing liquid is stored up to the upper end of the inner bath 11 , the processing liquid overflows from the top of the inner bath 11 to the outer bath 12 .

The first lifter 126 has a back plate 22 extending in the vertical direction (Z direction) and three holding bars 21 extending in the horizontal direction (Y direction) from the lower end of the back plate 22 . A plurality of (for example, 52) holding grooves are formed in each holding bar 21 at a predetermined pitch. A plurality of substrates W are held on three holding rods 21 in parallel with each other at predetermined intervals in an upright posture with their peripheral edges fitted in the holding grooves.

The first lifter 126 moves up and down in the first chemical tank 121 . 3 and 4 are diagrams showing the lifting operation of the first lifter 126. FIG. By moving the first lifter 126 up and down, the substrate W moves from the immersion position (the position in FIG. 4) inside the processing tank 10 to the lifting position above the processing tank 10, as indicated by the arrow AR2 in FIG. (position in FIG. 3). By lowering the substrate W to the immersion position while the processing liquid is stored in the processing bath 10, the substrate W is immersed in the processing liquid and subjected to the surface treatment.

Returning to FIG. 2, the treatment liquid supply unit 30 includes a nozzle 31 and a piping system for supplying the treatment liquid thereto. The nozzle 31 is arranged at the bottom inside the inner bath 11 of the processing bath 10 . A dispersion plate 15 is provided directly above the nozzle 31 so as to face the nozzle 31 . Furthermore, a punching plate 17 is provided above the dispersion plate 15 .

5 is a diagram of the nozzle 31, the dispersion plate 15 and the punching plate 17 viewed from the bottom of the processing tank 10. FIG. A tip portion of the pipe 32 of the processing liquid supply unit 30 (the portion extending into the processing bath 10) constitutes a pipe 32a. A plurality of nozzles 31 are formed above the pipe 32a. Each nozzle 31 is communicatively connected to a pipe 32a. A dispersion plate 15 is provided above each of the plurality of nozzles 31 . The dispersion plate 15 is a disk-shaped member provided parallel to the horizontal plane. The nozzle 31 projects vertically upward from the pipe 32 a toward the distribution plate 15 . A punching plate 17 is provided over the entire horizontal cross section of the inner tank 11 above the dispersion plate 15 . A plurality of processing liquid holes 17 a are formed on the entire surface of the punching plate 17 .

The processing liquid supplied to the pipe 32a is discharged from the nozzle 31 toward the dispersion plate 15 directly above. When the processing liquid is discharged upward from the nozzle 31 while the processing liquid is stored in the processing tank 10, the flow of the processing liquid impinges on the distribution plate 15, the pressure of the liquid is dispersed, and the processing liquid is discharged. It extends horizontally along the surface of the dispersion plate 15 . The processing liquid spread horizontally by the dispersion plate 15 rises from the plurality of processing liquid holes 17a of the punching plate 17 to form a laminar flow in the processing bath 10 from the bottom to the top.

Returning to FIG. 2 , the piping system for supplying the processing liquid to the nozzle 31 is configured with a pump 33 , a heater 34 , a filter 35 , a flow control valve 36 and a valve 37 in the piping 32 . Pump 33, heater 34, filter 35, flow control valve 36 and valve 37 are arranged in this order from upstream to downstream of pipe 32 (from outer tank 12 to inner tank 11).

The tip side of the pipe 32 extends into the processing tank 10 to form a pipe 32 a ( FIG. 5 ), and the base end side of the pipe 32 is connected to the outer tank 12 . The pipe 32 guides the processing liquid flowing out of the outer tank 12 back to the inner tank 11 . That is, the processing liquid supply unit 30 circulates the processing liquid in the processing tank 10 . The pump 33 discharges the processing liquid from the outer tank 12 to the pipe 32 and sends the processing liquid to the nozzle 31 . The heater 34 heats the processing liquid flowing through the pipe 32 . When phosphoric acid or the like is used as the processing liquid, the processing liquid is heated by the heater 34 and the heated processing liquid is stored in the processing tank 10 .

The filter 35 filters the treatment liquid flowing through the pipe 32 to remove impurities and the like. A flow control valve 36 adjusts the flow rate of the processing liquid flowing through the pipe 32 . The valve 37 opens and closes the channel of the pipe 32 . By opening the valve 37 while operating the pump 33 , the processing liquid discharged from the outer tank 12 flows through the pipe 32 and is supplied to the nozzle 31 , the flow rate of which is regulated by the flow control valve 36 .

The chemical supply unit 80 includes a chemical supply source 81, a valve 82, a nozzle 83 and a pipe 84. The pipe 84 has a distal end connected to the nozzle 83 and a proximal end connected to the chemical solution supply source 81 . A valve 82 is provided in the middle of the path of the pipe 84 . When the valve 82 is opened, the chemical liquid is supplied from the chemical liquid supply source 81 to the nozzle 83 and discharged from the nozzle 83 toward the outer tank 12 of the processing tank 10 . The chemical solution supplied from the chemical solution supply part 80 to the outer tank 12 is supplied into the inner tank 11 by the treatment liquid supply part 30 . It should be noted that the nozzle 83 of the chemical solution supply unit 80 may directly supply the chemical solution to the inner tank 12 . In addition, the first rinse tank 122 and the second rinse tank 124 are not provided with the chemical supply unit 80 .

A pure water supply unit 90 includes a pure water supply source 91 , a valve 92 , a nozzle 93 and a pipe 94 . The tip side of the pipe 94 is connected to the nozzle 93 , and the base end side is connected to the pure water supply source 91 . A valve 92 is provided in the middle of the path of the pipe 94 . When the valve 92 is opened, pure water is supplied from the pure water supply source 91 to the nozzle 93 and discharged from the nozzle 93 toward the outer tank 12 of the processing tank 10 . In the first chemical tank 121, the pure water supplied by the pure water supply unit 90 functions as a diluent for the chemical. The chemical solution is supplied from the chemical solution supply part 80 to the processing bath 10 and the pure water is supplied from the pure water supply part 90 to dilute the chemical solution.

The drainage unit 40 includes a pipe 41 and a valve 45. The tip side of the pipe 41 is connected to the bottom wall of the inner tank 11 of the processing tank 10 . A valve 45 is provided in the middle of the path of the pipe 41 . The base end side of the pipe 43 is connected to the drainage equipment of the factory where the substrate processing apparatus 1 is installed. When the valve 45 is opened, the processing liquid stored in the inner tank 11 is rapidly discharged from the bottom of the inner tank 11 to the pipe 41 and processed by the drainage equipment.

The bubble supply unit 50 includes a plurality of bubble supply pipes 51 (six in this embodiment) and a piping system for supplying gas to them. The six bubble supply pipes 51 are arranged inside the inner bath 11 of the processing bath 10 above the punching plate 17 and below the substrate W held at the immersion position by the first lifter 126 . Each of the six bubble supply pipes 51 is a long tubular member. Each bubble supply pipe 51 is provided with a plurality of bubble holes. Each of the six bubble supply pipes 51 discharges gas from the bubble hole into the processing liquid stored in the processing tank 10 . When gas is supplied from the six bubble supply pipes 51 into the processing liquid while the processing liquid is stored in the processing bath 10, the gas becomes bubbles and rises in the processing liquid. The gas supplied by the bubble supply unit 50 is, for example, an inert gas. The inert gas is, for example, nitrogen or argon (nitrogen is used in this embodiment).

A piping system for supplying gas to the six bubble supply pipes 51 includes a pipe 52, a gas supply mechanism 53 and a gas supply source 54. The tip side of one pipe 52 is connected to each of the six bubble supply pipes 51 . A proximal end of the pipe 52 is connected to a gas supply source 54 . A gas supply mechanism 53 is provided for each of the pipes 52 . That is, one gas supply mechanism 53 is provided for each of the six bubble supply pipes 51 . A gas supply source 54 delivers gas to each pipe 52 . The gas supply mechanism 53 includes a mass flow controller and an opening/closing valve (not shown), and supplies gas to the bubble supply pipe 51 through the pipe 52 and adjusts the flow rate of the supplied gas.

The control unit 70 controls the various operating mechanisms provided in the substrate processing apparatus 100 . FIG. 6 is a block diagram showing the configuration of the control section 70. As shown in FIG. The hardware configuration of the control unit 70 is the same as that of a general computer. That is, the control unit 70 includes a CPU that is a circuit that performs various arithmetic processing, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, and control software and data. A storage unit 74 (for example, a magnetic disk) for storing is provided. The processing in the substrate processing apparatus 100 proceeds as the CPU of the control unit 70 executes a predetermined processing program.

The control unit 70 includes an insertion position specifying unit 71. The insertion position specifying unit 71 is a functional processing unit realized by the CPU of the control unit 70 executing a predetermined processing program. Details of the processing performed by the insertion position specifying unit 71 will be described later. A storage unit 74 of the control unit 70 stores a processing recipe 75 that defines procedures and conditions for processing the substrate W. FIG. The processing recipe 75 is acquired by the substrate processing apparatus 100 by, for example, being input by an operator of the apparatus via an input unit 72 described later and stored in the storage unit 74 . Alternatively, the processing recipe 75 may be transferred to the substrate processing apparatuses 100 by communication from a host computer that manages a plurality of substrate processing apparatuses 100 and stored in the storage unit 74 .

Mechanisms such as the sensor 112 and the single-wafer hand 150 are electrically connected to the control unit 70 . The control unit 70 receives detection results from the sensor 112 and controls the operation of the single-wafer hand 150 .

A display unit 73 and an input unit 72 are also connected to the control unit 70 . The display unit 73 and the input unit 72 function as user interfaces of the substrate processing apparatus 100 . The control unit 70 displays various information on the display unit 73 . An operator of the substrate processing apparatus 100 can input various commands and parameters from the input section 72 while confirming the information displayed on the display section 73 . A keyboard or a mouse, for example, can be used as the input unit 72 . As the display unit 73, for example, a liquid crystal display can be used. In this embodiment, as the display unit 73 and the input unit 72, a liquid crystal touch panel provided on the outer wall of the substrate processing apparatus 100 is employed to have both functions.

Next, processing operations in the substrate processing apparatus 100 will be described. FIG. 7 is a flow chart showing a processing procedure in the substrate processing apparatus 100 of the first embodiment. The processing procedure described below proceeds as the control unit 70 controls each operating mechanism of the substrate processing apparatus 100 .

First, the carrier 111 containing unprocessed substrates W is placed on the load port 110, and the substrates W are carried into the substrate processing apparatus 100 (step S1). In the carrier 111, a plurality of substrates W are accommodated in a state of being stacked and arranged in a horizontal posture. When the carrier 111 is placed on the load port 110, the ID tag attached to the carrier 111 is read by an optical reader (not shown) to identify the lot (a set of multiple substrates W) accommodated in the carrier 111. The number is transmitted to control unit 70 . The control unit 70 extracts the processing recipe 75 pre-assigned to the identification number of the lot from many processing recipes 75 stored in the storage unit 74 .

The control unit 70 detects the orientation of each of the plurality of substrates W stored in the carrier 111 based on the extracted processing recipe 75 (step S2). The orientation of the substrate W is information as to which direction the surface faces. For example, in a state in which a plurality of substrates W are stacked in a horizontal posture, the surface of each substrate W faces either upward or downward. The orientation of each of the plurality of substrates W housed in the carrier 111 is designated by the processing recipe 75 . Based on the processing recipe 75, the control unit 70 detects whether the surface of each of the plurality of substrates W horizontally stacked on the carrier 111 faces upward or downward. The surface of the substrate W is the surface on which patterns and films are formed among the two main surfaces. The main surface of the substrate W opposite to the front surface is the back surface.

Also, after the carrier 111 is placed on the load port 110 , the pod opener opens the front cover of the carrier 111 . Then, the sensor 112 detects the arrangement intervals of the plurality of substrates W accommodated in the carrier 111 (step S3). The sensor 112 optically detects the arrangement interval of the plurality of substrates W stacked and arranged in a horizontal posture. Information about the arrangement interval of the substrates W detected by the sensor 112 is transmitted to the controller 70 .

By detecting the orientation of the substrates W in step S2 and detecting the arrangement interval of the substrates W in step S3, the control unit 70 acquires two types of information regarding the arrangement state of the plurality of substrates W stored in the carrier 111. becomes. Then, the insertion position specifying unit 71 of the control unit 70 specifies the insertion positions of the dummy substrates DW based on the detected two pieces of information (orientation information and arrangement interval information) regarding the arrangement state of the plurality of substrates W (step S4).

FIG. 8 is a diagram for conceptually explaining an example of dummy substrate insertion in the first embodiment. Each concave portion of the unevenness shown in the lower part of FIG. 8 indicates a slot capable of holding one substrate W. As shown in FIG. A plurality of slots shown in FIG. 8 correspond to, for example, a plurality of holding grooves or the like carved in the holding bar 21 of the first lifter 126 . Further, in FIG. 8, the short arrows indicate the surface of the substrate W (the same applies to FIGS. 9, 10, 12, 13, and 14 hereinafter).

In the example shown in FIG. 8, the substrates W are basically sequentially held in all slots. That is, the basic interval between adjacent substrates W is one slot. Such an example corresponds to processing a lot of 50 sheets. However, in the stacked arrangement of the plurality of substrates W, one substrate W is missing from between the substrates W11 and W12. Similarly, one substrate W is missing from between the substrate W13 and the substrate W14. Such omission of the substrate W occurs, for example, as a result of removal of the substrate W, which has been defectively processed in the previous process of the substrate processing apparatus 100 .

The gap between the substrate W11 and the substrate W12 and the gap between the substrate W13 and the substrate W14 become 2 slots due to the substrate W coming off. That is, in the stacking arrangement of a plurality of substrates W, the intervals between adjacent substrates W become uneven. Information about the interval between the substrates W adjacent to each other is acquired in step S3 and transmitted to the control unit 70 . Information about the orientation of the surface of each substrate W is obtained in step S2.

The relative widening of the distance between the substrates W11 and W12 and the distance between the substrates W13 and W14 means that the width of the space existing on the surface side of the substrate W11 and the substrate W13 exists on the surface side of the other substrate W. It means that it will be wider than the width of the space to be used. That is, the width of the space existing on the surface side of the other substrate W is 1 slot, while the width of the space existing on the surface side of the substrate W11 and the substrate W13 is 2 slots.

In addition, the width of the space existing on the surface side of the substrate W15 at the end in the stacked arrangement of the plurality of substrates W is relatively wide. Regarding the substrate W located at the farthest end on the side opposite to the substrate W15, since the substrates W are arranged at positions adjacent to each other on the front surface side, the width of the space existing on the front surface side is equal to that of the other substrates W15. is the same as the width of the space that exists on the surface side of the (that is, one slot).

If the substrate processing section 120 processes the plurality of substrates W stacked and arranged in such a state that the intervals are not uniform, the flow of the processing liquid and air bubbles will be different where the intervals between the substrates are wide. , resulting in uneven processing. For this reason, in the first embodiment, the insertion position specifying unit 71 specifies the positions into which the dummy substrates DW are inserted so that the width of the space existing on the surface side of each of the plurality of substrates W is constant. . In particular, in the first embodiment, the insertion position specifying unit 71 determines the insertion position of the dummy substrate DW so that the dummy substrate DW is arranged opposite to the front surface of the substrate W having a relatively wide space on the front surface side. Identify. Specifically, the slot A which is one slot away from the surface of the substrate W11, the slot B which is one slot away from the surface of the substrate W13, and the slot C which is one slot away from the surface of the substrate W15 serve as insertion positions for the dummy substrates DW. identified. That is, in the first embodiment, the insertion positions of the dummy substrates DW are specified so that the width of the space existing on the surface side of each of the plurality of substrates W is one slot. Since 52 holding grooves are formed in the holding bar 21, even in a lot of 50 substrates, it is possible to hold the dummy substrates DW in the slot C which is one slot apart from the surface of the substrate W15. be.

After the insertion positions of the dummy substrates DW are specified, the carry-in/out mechanism 140 takes out the plurality of substrates W from the carrier 111 . The loading/unloading mechanism 140 moves to the loading/unloading position P<b>1 and collectively receives and holds a plurality of substrates W accommodated in the carrier 111 by the batch hand 141 . Then, the loading/unloading mechanism 140 moves to the transfer position P<b>2 while holding the plurality of substrates W on the batch hand 141 .

On the other hand, the single-wafer hand 150 takes out the dummy substrate DW from the stocker 155, moves to the loading/unloading position P1, and faces the loading/unloading mechanism 140 stopped at the transfer position P2. Then, the single-wafer hand 150 inserts the dummy substrate DW into the stacking arrangement of the plurality of substrates W held by the loading/unloading mechanism 140 (step S5). The single-wafer hand 150 inserts the dummy substrate DW into the slot specified in step S4. Specifically, the single substrate hand 150 inserts dummy substrates DW into slots A, B and C in FIG. In this specification, the insertion of the dummy substrate DW also includes arranging the dummy substrate DW at the end of the stacked arrangement of the plurality of substrates W.

After the dummy substrates DW are inserted, the carry-in/out mechanism 140 moves the plurality of substrates W into which the dummy substrates DW are inserted (hereafter, the stacking arrangement of the plurality of substrates W including the inserted dummy substrates DW is referred to as “stacking of substrates W”). (referred to as "body") from a horizontal posture to a standing posture. The stack of substrates W in the upright posture is transferred from the loading/unloading mechanism 140 to the horizontal transport mechanism 170 via the transfer mechanism 160 . The horizontal transport mechanism 170 transfers the stack of substrates W to the main transport robot 130 . Then, the main transport robot 130 transfers the stack of substrates W to the first lifter 126 (or the second lifter 127).

In the first chemical tank 121 , the processing liquid is circulated by overflowing from the inner tank 11 of the processing tank 10 to the outer tank 12 and returning to the inner tank 11 . Specifically, the processing liquid flowing out from the outer tank 12 to the pipe 32 is sent to the nozzle 31 by the pump 33 . At this time, the processing liquid flowing through the pipe 32 is heated by the heater 34 as necessary. Also, the flow rate of the processing liquid flowing through the pipe 32 is regulated by a flow rate control valve 36 .

The processing liquid supplied to the nozzle 31 is discharged upward in the inner bath 11 from the nozzle 31 . The treatment liquid discharged from the nozzles 31 collides with the dispersion plate 15 and spreads horizontally along the surface of the dispersion plate 15 . The processing liquid spread in the horizontal direction by the dispersion plate 15 reaches the punching plate 17 and passes through the plurality of processing liquid holes 17a. to form. The processing liquid that has reached the upper end of the inner bath 11 overflows and flows into the outer bath 12 .

The stack of substrates W is immersed in the treatment liquid while a laminar flow of the treatment liquid is formed in the treatment bath 10 (step S6). Specifically, the first lifter 126 that has received the stacked body of substrates W descends from the lifting position above the processing tank 10, lowers the stacked body of substrates W to the immersion position in the processing tank 10, and immerses the stacked body in the processing liquid. The substrate W is immersed.

The first lifter 126 holds the stack of substrates W at the immersion position in a state in which a laminar flow of the processing liquid is formed in the processing tank 10 , thereby forming a layer of the processing liquid between the substrates W. As the current flows, the surface of the substrate W is exposed to the processing liquid, and the surface processing (etching processing in this embodiment) of the substrate W proceeds (step S7).

Also, the bubble supply unit 50 supplies bubbles from the bubble supply pipe 51 into the processing liquid in the processing tank 10 . The flow velocity of the laminar flow of the processing liquid formed by the dispersion plate 15 and the punching plate 17 is relatively low. flow speed increases. By increasing the flow velocity of the processing liquid in the vicinity of the surface of the substrate W, the surface processing efficiency of the substrate W can be improved and the etching rate can be increased.

In the first embodiment, the dummy substrate DW is inserted so that the width of the space existing on the surface side of each of the plurality of substrates W is constant (one slot). Therefore, the width of the space existing on the front surface side of all of the plurality of substrates W becomes equal. As a result, the flow of the processing liquid and the behavior of air bubbles in the vicinity of the surface of all of the substrates W become uniform, so that all of the substrates W can be uniformly processed.

After the etching process for a predetermined time is completed, the first lifter 126 lifts the stack of substrates W from the first chemical bath 121 and transfers it to the first rinse bath 122 . A plurality of substrates W are rinsed in the first rinse bath 122 . After that, the main transport robot 130 transports the stack of substrates W to the drying processing section 125, and the plurality of substrates W are dried. After the drying process, the stack of substrates W is transferred from the main transfer robot 130 to the horizontal transfer mechanism 170 and further transferred to the carry-in/out mechanism 140 via the transfer mechanism 160 . Then, the loading/unloading mechanism 140 accommodates the plurality of substrates W in the carrier 111, and the substrates W are unloaded (step S8).

FIG. 9 is a diagram for conceptually explaining another example of dummy substrate insertion in the first embodiment. In the example of FIG. 8, all the substrates W have the same surface orientation, but in the example of FIG. 9, two adjacent substrates W form a pair, and the surfaces of the two substrates W face each other. are stacked and arranged as follows.

Also in the example shown in FIG. 9, the width of the space existing on the surface side of the substrate W is basically one slot. However, the substrate W paired with the substrate W21 and the substrate W paired with the substrate W22 are missing. Due to the occurrence of such an omission of the substrate W, the width of the space existing on the surface side of the substrate W21 and the substrate W22 becomes two slots. That is, the width of the space existing on the front surface side of the substrate W is non-uniform.

Therefore, in the example shown in FIG. 9, a slot D facing the surface of the substrate W21 and separated by one slot from the surface, and a slot E facing the surface of the substrate W22 and separated by one slot from the surface are dummy substrates. Dummy substrates DW are inserted into slots D and E, which are specified as DW insertion positions. Even in this manner, the width of the space existing on the front surface side of all of the plurality of substrates W becomes equal, so that all of the plurality of substrates W can be uniformly processed.

In short, in the first embodiment, the insertion position of the dummy substrate DW is specified so that the dummy substrate DW is arranged opposite to the surface of the substrate W whose width of the space existing on the surface side is wider than one slot. As a result, the width of the space existing on the surface side of each of the plurality of substrates W becomes constant (one slot). As a result, the flow of the processing liquid and the behavior of air bubbles in the vicinity of the surface of all of the substrates W become uniform, so that all of the substrates W can be uniformly processed.

<Second embodiment>
Next, a second embodiment of the invention will be described. The configuration of the substrate processing apparatus of the second embodiment is the same as that of the first embodiment. The processing procedure in the substrate processing apparatus of the second embodiment is also the same as that of the first embodiment. The difference between the second embodiment and the first embodiment is the manner in which the dummy substrate DW is inserted.

FIG. 10 is a diagram for conceptually explaining an example of dummy substrate insertion in the second embodiment. In the first embodiment, basically, the substrates W are sequentially held in all the slots. ). That is, in the stacking arrangement of the substrates W of the second embodiment, the substrates W are basically held every four slots. However, one substrate W that should be located at the position of the slot F, which is four slots away from the surface of the substrate W31, is missing.

Due to the occurrence of such a missing substrate W, the gap between the substrate W31 and the substrate W32 becomes wider than the gap between the other adjacent substrates W, resulting in non-uniform substrate gaps. Therefore, in the second embodiment, the positions for inserting the dummy substrates DW are specified so that each of the plurality of substrates W and the dummy substrates DW are arranged at equal intervals. Specifically, a slot F that is four slots away from the surface of the substrate W31 is specified as the insertion position of the dummy substrate DW, and the dummy substrate DW is inserted into the slot F. As a result, each of the plurality of substrates W and the dummy substrate DW are arranged at intervals of 4 slots. Even in the second embodiment, the insertion position of the dummy substrate DW is specified so that the width of the space existing on the surface side of each of the plurality of substrates W is constant.

In the second embodiment, the insertion positions of the dummy substrates DW are specified so that each of the plurality of substrates W and the dummy substrates DW are arranged at equal intervals. As a result, the width of the space existing on the surface side of each of the plurality of substrates W becomes constant (four slots). As a result, as in the first embodiment, the flow of the processing liquid and the behavior of bubbles in the vicinity of the surface of all of the plurality of substrates W become uniform, and uniform processing can be performed on all of the plurality of substrates W. You can.

<Third Embodiment>
Next, a third embodiment of the invention will be described. The overall configuration of the substrate processing apparatus of the third embodiment is substantially the same as that of the first embodiment. Further, the contents of processing in the substrate processing apparatus of the third embodiment are also substantially the same as those of the first embodiment. In the third embodiment, part of the structure of the substrate processing apparatus is used instead of the dummy substrate DW.

FIG. 11 is a diagram showing the back plate 222 of the first lifter 126 (or the second lifter 127) of the third embodiment. A circular plate 223 is formed on a part of the back plate 222 of the third embodiment. The circular plate 223 is formed in a circular shape with the same diameter as the substrate W. The configuration of the rest of the substrate processing apparatus except for the back plate 222 of the lifter is the same as that of the first embodiment.

FIG. 12 is a diagram showing a state in which a plurality of substrates W are held by the first lifter 126 of the third embodiment. In the example shown in FIG. 12, a plurality of substrates W are held by the holding rods 21 of the first lifter 126 at regular intervals (1-slot intervals). That is, most of the substrates W are held adjacent to each other with a one-slot spacing on the front surface side. However, there is no adjacent substrate W on the surface side of the substrate W41 at the extreme end in the stacked arrangement of the plurality of substrates W. As shown in FIG.

Therefore, in the third embodiment, a circular plate 223 having the same shape and size as the substrate W is formed on part of the back plate 222 . Then, the substrate W41 at the farthest end and the circular plate 223 face each other, specifically, the interval between the substrate W41 and the circular plate 223 is the same as the interval between the other adjacent substrates W (one slot). , a plurality of substrates W are held. As a result, the widths of the spaces existing on the surface side of all of the plurality of substrates W become equal.

In the third embodiment, the plurality of substrates W are held by the first lifter 126 in a state in which the opposing plate is arranged such that the width of the space existing on the surface side of each of the plurality of substrates W is constant (one slot). are doing. The opposing plate here is a circular plate 223 which is part of the structure of the substrate processing apparatus. Even in the case of the third embodiment, since the width of the space existing on the surface side of all of the plurality of substrates W is the same, the flow of the processing liquid and the behavior of bubbles in the vicinity of the surface of all of the plurality of substrates W are different. All of the plurality of substrates W can be uniformly processed.

<Modification>
Although the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the scope of the invention. For example, in each of the embodiments described above, the plurality of substrates W are arranged regularly, but the technology according to the present invention can be applied even if the plurality of substrates W are arranged irregularly. FIG. 13 is a diagram for conceptually explaining another example of dummy substrate insertion. In the example of FIG. 13, a plurality of substrates W are stacked and arranged at irregular intervals. Since the plurality of substrates W are arranged irregularly, it is impossible to arrange each of the plurality of substrates W and the dummy substrates DW at equal intervals as in the second embodiment. For this reason, in the example shown in FIG. 13, the slot facing the surface of all the substrates W and separated by one slot from the surface is specified as the insertion position of the dummy substrate DW. Even in this way, the dummy substrates DW are arranged to face all the surfaces of the plurality of substrates W, and the width of the space existing on the surface side of each of the plurality of substrates W becomes constant (one slot). As a result, the flow of the processing liquid and the behavior of air bubbles in the vicinity of the surface of all of the substrates W become uniform, so that all of the substrates W can be uniformly processed.

In addition, in the second embodiment, each of the plurality of substrates W and the dummy substrate DW are arranged at regular intervals. They may be arranged facing each other. FIG. 14 is a diagram for conceptually explaining another example of dummy substrate insertion. The stacking arrangement of the substrates W in FIG. 14 is the same as the stacking arrangement of the substrates W in the second embodiment (FIG. 10). In FIG. 10, the dummy substrates DW are inserted so that each of the plurality of substrates W and the dummy substrates DW are arranged at equal intervals, but in the example shown in FIG. A slot separated by one slot from the surface is specified as the insertion position of the dummy substrate DW. Even in this way, the dummy substrates DW are arranged to face all the surfaces of the plurality of substrates W, and the width of the space existing on the surface side of each of the plurality of substrates W becomes constant (one slot). As a result, as in the second embodiment, the flow of the processing liquid and the behavior of bubbles in the vicinity of the surface of all of the plurality of substrates W become uniform, and uniform processing can be performed on all of the plurality of substrates W. can.

Also, in the third embodiment, as in the first and second embodiments, dummy substrates DW may be inserted into the row of a plurality of substrates W. In this case, in addition to the circular plate 223, the dummy substrate DW also functions as a counter plate. That is, the term “opposing plate” is a conceptual term that includes both the circular plate 223 and the dummy substrate DW, which are part of the structure of the substrate processing apparatus. By holding the plurality of substrates W on the first lifter 126 in a state where the opposing plate is arranged so that the width of the space existing on the surface side of each of the plurality of substrates W is constant, the plurality of substrates W can be separated. The width of the space existing on the surface side becomes equal for all. As a result, the flow of the processing liquid and the behavior of air bubbles in the vicinity of the surface of all of the substrates W become uniform, so that all of the substrates W can be uniformly processed.

In addition, in the second embodiment, the plurality of substrates W are arranged at intervals of 4 slots, but the present invention is not limited to this, and the plurality of substrates W may be arranged at other intervals, for example, at intervals of 2 slots. can be Such an example corresponds to processing a lot of 25 sheets. Even when a plurality of substrates W are arranged at two-slot intervals, the dummy substrates DW are arranged such that each of the plurality of substrates W and the dummy substrates DW are arranged at equal intervals, as in the second embodiment. , the width of the space existing on the surface side of each of the plurality of substrates W becomes constant (two slots). Alternatively, dummy substrates DW may be inserted into slots facing the surfaces of all substrates W and separated from the surfaces by one slot. In this way, the dummy substrates DW are arranged to face all the surfaces of the plurality of substrates W, and the width of the space existing on the surface side of each of the plurality of substrates W becomes constant (one slot). In either method, the flow of the processing liquid and the behavior of air bubbles in the vicinity of the surface of all of the substrates W become uniform, so that all of the substrates W can be uniformly processed.

Also, in each of the above-described embodiments, the dummy substrates DW were inserted only in the necessary slots, but the dummy substrates DW may be inserted in all the empty slots. Even in this way, the width of the space existing on the surface side of each of the plurality of substrates W is surely constant (one slot). As a result, the flow of the processing liquid and the behavior of air bubbles in the vicinity of the surface of all of the substrates W become uniform, so that all of the substrates W can be uniformly processed.

Also, in each of the above embodiments, the supply of air bubbles is not essential. Even if bubbles are not supplied, the width of the space existing on the surface side of each of the plurality of substrates W is made constant, so that the processing liquid flows uniformly in the vicinity of the surface of each of the plurality of substrates W. All of the plurality of substrates W can be uniformly processed.

REFERENCE SIGNS LIST 10 treatment tank 30 treatment liquid supply section 50 bubble supply section 70 control section 100 substrate processing apparatus 110 load port 111 carrier 112 sensor 120 substrate processing section 121 first chemical tank 122 first rinse tank 123 second chemical tank 124 second rinse tank 125 Drying processing unit 126 First lifter 127 Second lifter 130 Main transfer robot 140 Loading/unloading mechanism 150 Sheet-fed hand 160 Transfer mechanism 170 Horizontal transfer mechanism DW Dummy substrate W Substrate

Claims

A substrate processing method for surface-treating a plurality of substrates with a processing liquid, comprising:
a detection step of detecting an arrangement state of a plurality of substrates;
a specifying step of specifying a position into which a dummy substrate is to be inserted with respect to the arrangement of the plurality of substrates based on the arrangement state of the plurality of substrates detected in the detecting step;
a processing step of performing a surface treatment on the plurality of substrates by immersing the plurality of substrates with the dummy substrates inserted in the positions specified in the specifying step in a processing liquid stored in a processing tank;
with
In the specifying step, the substrate processing method specifies a position into which the dummy substrate is to be inserted so that the width of the space existing on the surface side of each of the plurality of substrates is constant.
In the substrate processing method according to claim 1,
The detection step includes
detecting the orientation of each of the plurality of substrates;
a step of detecting an arrangement interval of the plurality of substrates;
A substrate processing method comprising:
In the substrate processing method according to claim 1 or claim 2,
In the specifying step, the substrate processing method specifies a position where the dummy substrate is to be inserted so that the dummy substrate is arranged to face one of the surfaces of the plurality of substrates.
In the substrate processing method according to claim 1 or claim 2,
In the specifying step, the substrate processing method specifies a position into which the dummy substrate is inserted so that each of the plurality of substrates and the dummy substrate are arranged at equal intervals.
In the substrate processing method according to any one of claims 1 to 4,
The processing step includes
forming a flow of processing liquid in the processing bath;
a step of supplying air bubbles into the processing liquid stored in the processing tank;
A substrate processing method comprising:
A substrate processing method for surface-treating a plurality of substrates with a processing liquid, comprising:
a holding step of holding the plurality of substrates by a lifter in a state in which the opposing plate is arranged with respect to the plurality of substrates so that the width of the space existing on the surface side of each of the plurality of substrates is constant;
a treatment step of performing surface treatment on the plurality of substrates by elevating the lifter to immerse the plurality of substrates in a treatment liquid stored in a treatment tank;
A substrate processing method comprising:
In the substrate processing method according to claim 6,
The substrate processing method, wherein the counter plate includes a circular back plate provided on the lifter.
In the substrate processing method according to claim 6 or claim 7,
The processing step includes
forming a flow of processing liquid in the processing bath;
a step of supplying air bubbles into the processing liquid stored in the processing tank;
A substrate processing method comprising:
A substrate processing apparatus for surface-treating a plurality of substrates with a processing liquid,
a processing tank for storing the processing liquid;
a processing liquid supply unit that supplies a processing liquid into the processing tank;
a lifter that holds a plurality of substrates and moves up and down to immerse the plurality of substrates in the processing liquid stored in the processing tank;
with
The substrate processing apparatus according to claim 1, wherein the lifter holds the plurality of substrates in a state in which the counter plate is arranged with respect to the plurality of substrates so that the width of the space existing on the surface side of each of the plurality of substrates is constant.
In the substrate processing apparatus according to claim 9,
The substrate processing apparatus, wherein the counter plate includes a circular back plate provided on the lifter.
In the substrate processing apparatus according to claim 9 or 10,
The substrate processing apparatus, wherein the opposing plate includes a dummy substrate.
In the substrate processing apparatus according to any one of claims 9 to 11,
A substrate processing apparatus further comprising a bubble supply unit that supplies bubbles to the processing liquid stored in the processing bath.