WO2023145143A1 - Terahertz bandpass polarizer and method for manufacturing terahertz bandpass polarizer - Google Patents

Terahertz bandpass polarizer and method for manufacturing terahertz bandpass polarizer Download PDF

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Publication number
WO2023145143A1
WO2023145143A1 PCT/JP2022/037618 JP2022037618W WO2023145143A1 WO 2023145143 A1 WO2023145143 A1 WO 2023145143A1 JP 2022037618 W JP2022037618 W JP 2022037618W WO 2023145143 A1 WO2023145143 A1 WO 2023145143A1
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terahertz
bandpass
polarizer
substrate
band
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PCT/JP2022/037618
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French (fr)
Japanese (ja)
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大地 鈴木
正 寺崎
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国立研究開発法人産業技術総合研究所
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Publication of WO2023145143A1 publication Critical patent/WO2023145143A1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements

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  • the present invention relates to a terahertz bandpass polarizer and a method for manufacturing a terahertz bandpass polarizer.
  • the terahertz band (THz: 10 12 Hz) will be used as a carrier frequency band for radio waves. Therefore, terahertz band transceivers and optical elements for the terahertz band are being developed.
  • the terahertz band means, for example, between 0.1 THz and 30 THz.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a terahertz band-pass polarizer having both a polarization function and a band-pass function, and a method for manufacturing the terahertz band band-pass polarizer.
  • a terahertz bandpass polarizer includes a substrate made of polyimide, polyamide, or cellulose acetate, and a plurality of substrates provided on the substrate and arranged substantially parallel to each other at regular intervals. and a linear thin conductor wire, and the interval in the width direction perpendicular to the extending direction of the conductor thin wire is 20 ⁇ m to 300 ⁇ m.
  • the substrate may have a thickness of 5 ⁇ m to 50 ⁇ m.
  • the substrate may have a dielectric constant of 3.0 to 5.0.
  • the substrate may have a dielectric loss tangent of 0.0010 to 0.0300.
  • the length of the conductor thin wire in the width direction may be 20 ⁇ m to 300 ⁇ m.
  • the fine conductor wires may be made of metal.
  • the metal may be Au, Al, Cu, or Ag.
  • the fine conductor wire is capable of absorbing an electromagnetic wave in the terahertz band, and is capable of absorbing the electromagnetic wave. It may be made of an electromagnetic wave absorbing thermoelectric material capable of generating an electrical signal from generated heat.
  • the electromagnetic wave absorbing thermoelectric material may be a carbon nanotube.
  • the terahertz-band bandpass polarizer according to any one of the above ⁇ 1> to ⁇ 9> has a cross section parallel to the plate thickness direction of the substrate and parallel to the width direction of the conductor thin wire.
  • WHEREIN You may have a convex part in the edge part of the width direction of the said conductor fine line.
  • the height of the convex portion may be 20 nm to 2 ⁇ m.
  • a method for producing a terahertz-band bandpass polarizer according to an aspect of the present invention is a laminate comprising a substrate made of polyimide, polyamide, or cellulose acetate, and a conductive layer provided on the substrate, A thin conductor wire forming step of removing a part of the conductive layer by irradiating with a laser and forming a plurality of straight conductor thin wires arranged substantially parallel to each other at regular intervals.
  • the substrate may have a thickness of 5 ⁇ m to 50 ⁇ m.
  • the substrate may have a dielectric constant of 3.0 to 5.0.
  • the substrate may have a dielectric loss tangent of 0.0010 to 0.0300.
  • the spacing in the width direction orthogonal to the extending direction of the fine conductor wires is 20 ⁇ m to 300 ⁇ m.
  • the length in the width direction orthogonal to the extending direction of the fine conductor wires is 20 ⁇ m to 300 ⁇ m.
  • the conductive layer may be made of metal.
  • the metal may be Au, Al, Cu, or Ag.
  • the method for producing a terahertz band-pass polarizer according to ⁇ 18> or ⁇ 19> above may further include a metal conductive layer forming step of forming a conductive layer on the substrate by vapor deposition.
  • the conductive layer is capable of absorbing an electromagnetic wave in the terahertz band, and absorbs the electromagnetic wave. It may be made of an electromagnetic wave absorbing thermoelectric material capable of generating an electric signal from the heat generated by heating.
  • the electromagnetic wave absorbing thermoelectric material may be a carbon nanotube.
  • the method for producing the terahertz-band bandpass polarizer according to ⁇ 22> above comprises filtering a carbon nanotube dispersion liquid to produce a carbon nanotube film, and transferring the carbon nanotube film to the substrate.
  • the method may further include an electromagnetic wave absorbing thermoelectric material layer forming step for forming the conductive layer.
  • a terahertz bandpass polarizer having both a polarizing function and a bandpass function, and a method for manufacturing the terahertz bandpass polarizer.
  • FIG. 1 is a plan view of a terahertz bandpass polarizer according to a first embodiment of the present invention
  • FIG. FIG. 2 is a cross-sectional view taken along line AA shown in FIG. 1
  • 3 is a flow chart of a method for manufacturing a terahertz bandpass polarizer according to the first embodiment of the present invention
  • It is a cross-sectional schematic diagram of a laminated body.
  • BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing explaining an example of the manufacturing apparatus of a terahertz band bandpass polarizer.
  • FIG. 4 is a plan view of a terahertz bandpass polarizer according to a second embodiment of the present invention
  • FIG. 7 is a cross-sectional view taken along line BB shown in FIG. 6; 8 is a flow chart of a method for manufacturing a terahertz bandpass polarizer according to a second embodiment of the present invention; It is a cross-sectional schematic diagram of a laminated body.
  • 4 is a diagram showing a transmission spectrum of the terahertz-band bandpass polarizer of Example 1.
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 2;
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 3;
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 4;
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 5;
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 6;
  • FIG. 12 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 7;
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 8;
  • FIG. 12 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 9;
  • FIG. 10 is a diagram showing a transmission spectrum of the terahertz bandpass polarizer of Example 10;
  • FIG. 10 is a diagram showing the height profile of the terahertz bandpass polarizer of Example 4;
  • a plurality of linear thin conductor wires arranged substantially parallel to each other at regular intervals on a substrate made of polyimide, polyamide, or cellulose acetate can provide a conductor. It was found that S-polarized light is transmitted and P-polarized light is blocked near the resonance point, which depends on the spacing of the thin wires.
  • the present invention is an invention completed based on the above findings.
  • polarized light parallel to the conductor thin wire is defined as S-polarized light
  • polarized light perpendicular to the conductive thin wire 20 is defined as P-polarized light.
  • the terahertz bandpass polarizer of the present invention will be described below.
  • FIG. 1 The terahertz-band bandpass polarizer 100 according to the first embodiment will be described below with reference to FIGS. 1 and 2.
  • FIG. 1 characteristic parts may be shown enlarged for convenience in order to make the characteristics easier to understand, and the dimensional ratio of each component may differ from the actual one.
  • the materials, dimensions, etc. exemplified in the following description are examples, and the present invention is not limited to them, and can be implemented with appropriate modifications within the scope of the present invention.
  • the Y direction is one direction parallel to the surface of the substrate 10 and the extending direction of the fine conductor wires 20 .
  • the direction perpendicular to the Y direction along the surface of the substrate 10 is defined as the X direction (width direction).
  • the Z direction is a direction (thickness direction) perpendicular to the surface of the substrate 10 .
  • the Z direction is a direction perpendicular to the X and Y directions.
  • the +Z direction may be expressed as “up” and the ⁇ Z direction as “down”. Up and down do not necessarily match the direction in which gravity is applied.
  • FIG. 1 is a plan view of the terahertz bandpass polarizer according to the first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view along line AA shown in FIG.
  • the terahertz-band bandpass polarizer 100 according to the first embodiment includes a substrate 10 and a plurality of straight lines provided on the substrate 10 and arranged substantially parallel to each other at regular intervals. and a thin conductor wire 20 having a shape.
  • substantially parallel means that the angle formed by the thin conductor wire 20 and another thin conductor wire 20 is ⁇ 5° or less when viewed from the opposite side of the substrate 10 .
  • a numerical range represented by "-" means a range including the numerical values before and after "-" as lower and upper limits.
  • substrate 10 is made of polyimide, polyamide, or cellulose acetate. That is, substrate 10 is a polymer substrate.
  • the thickness of the substrate 10 is not particularly limited as long as it can have both a polarization function and a bandpass function.
  • the thickness of the substrate 10 is, for example, 5 ⁇ m to 50 ⁇ m.
  • a preferable thickness of the substrate 10 is 10 ⁇ m to 30 ⁇ m.
  • the substrate 10 is flat and that the plurality of thin conductor wires 20 are directly provided on the substrate 10 . If the unevenness of the resin is large, it may become difficult to transmit only S-polarized light at a specific wavelength. Further, by directly providing a plurality of thin conductor wires 20 on the substrate 10, the polarization characteristics can be further improved.
  • the dielectric constant of the substrate 10 at 1 MHz is preferably 3.0 to 5.0. More preferable polyimide has a dielectric constant of 3.0 to 4.0 at 1 MHz. A dielectric constant can be measured according to JIS C 2151:2019.
  • the dielectric loss tangent (1 MHz) of the substrate 10 at 1 MHz is preferably 0.0010 to 0.0300.
  • a more preferable dielectric loss tangent (1 MHz) at 1 MHz is 0.0013 to 0.0200.
  • a dielectric loss tangent can be measured according to JIS C 2151:2019.
  • the shape of the substrate 10 is not particularly limited as long as it can have both a polarization function and a bandpass function.
  • the shape of the substrate 10 includes a substrate shape, a film shape, a porous shape, and the like.
  • the substrate 10 preferably has a film shape.
  • a thin conductor wire 20 is provided on the substrate 10 .
  • a plurality of thin conductor wires 20 are arranged substantially parallel to each other at regular intervals.
  • the thin conductor wires 20 are provided, for example, at intervals ⁇ 1 in the width direction (X direction) orthogonal to the extending direction (Y direction) of the conductor thin wires 20 .
  • the interval ⁇ 1 is, for example, 20 ⁇ m to 300 ⁇ m.
  • the intervals between the thin conductor wires 20 are substantially the same.
  • the interval ⁇ 1 between the conductor thin wires 20 is the length between the center of the conductor thin wire 20 in the width direction and the center of the adjacent conductor thin wire 20 in the width direction.
  • the distance between the conductor thin wires 20 in the width direction can be measured by the following method.
  • An observation image is obtained by observing the terahertz bandpass polarizer 100 using an optical microscope or the like.
  • the widthwise intervals of the conductor thin wires 20 are measured at five points.
  • the average value of the obtained five spacing values is used as the spacing in the width direction of the thin conductor wires 20 .
  • the shape of the thin conductor wire 20 is linear.
  • the length d1 in the width direction of the thin conductor wire 20 is preferably 20 ⁇ m to 300 ⁇ m.
  • the length of the conductor fine wire 20 in the width direction can be measured by the following method.
  • the terahertz bandpass polarizer 100 is observed in a manner similar to the width direction spacing.
  • the lengths in the width direction of the five fine conductor wires 20 are measured in the obtained observation image, and the average value is taken as the length in the width direction of the fine conductor wires 20 .
  • the average thickness of the conductor thin wires 20 in the Z direction is, for example, 10 nm to 2000 nm.
  • the average thickness of the thin conductor wires 20 in the Z direction is preferably 30 nm to 60 nm when using a metal such as Au.
  • the average thickness of the conductive fine wire 20 in the Z direction can be measured, for example, by measuring the height profile of the terahertz bandpass polarizer 100 using a confocal laser microscope.
  • the average thickness of the thin conductor wires 20 in the Z direction is obtained by measuring the heights of five randomly selected thin conductor wires 20 and taking the average value as the average thickness of the thin conductor wires 20 in the Z direction.
  • the length of the thin conductor wire 20 in the extending direction (Y direction) is, for example, 0.5 mm to 20 mm.
  • the conductor thin wire 20 may have a convex portion 21 at the end in the width direction.
  • the height h1 of the convex portion 21 is, for example, 20 nm to 2 ⁇ m. It is preferable that the protrusions 21 are located at both ends of the thin conductor wire 20 in the width direction.
  • the height h1 of the convex portion 21 is the length in the Z direction from the central portion in the width direction of the thin conductor wire 20 to the highest portion of the convex portion 21 .
  • the height of the protrusions 21 in the Z direction of the conductor fine wires 20 can be measured, for example, by measuring the height profile of the terahertz bandpass polarizer 100 using a confocal laser microscope. Specifically, five fine conductor wires 20 are selected, and the length in the Z direction from the central portion in the width direction of each fine conductor wire 20 to the highest portion of the convex portion 21 is measured using a confocal laser microscope. Measure. The average value of the obtained measured values can be used as the height of the convex portion 21 of the fine conductor wire 20 .
  • the material of the thin conductor wire 20 of the first embodiment is not particularly limited as long as it has conductivity.
  • the material of the thin conductor wire 20 includes metals such as Au, Al, Cu, and Ag. Au is preferable as the material of the thin conductor wire 20 . If metal is used for the thin conductor wire 20, it is possible to obtain a higher transmittance than, for example, carbon nanotubes.
  • the terahertz-band bandpass polarizer 100 according to the first embodiment has been described above.
  • the terahertz-band bandpass polarizer 100 according to the first embodiment transmits only S-polarized light and blocks P-polarized light in the vicinity of the resonance point determined by the interval ⁇ 1 of the conductor thin wires 20 and the like. That is, the terahertz-band bandpass polarizer 100 has both a polarizing function and a bandpass function.
  • FIG. 3 is a flowchart of a method for manufacturing a terahertz bandpass polarizer according to the first embodiment.
  • FIG. 4 is a schematic cross-sectional view of the laminate 120 irradiated with laser.
  • the method for producing a terahertz band-pass polarizer includes a conductive layer forming step S10 of obtaining a laminate 120 by forming a conductive layer 25 on a substrate 10 made of polyimide, polyamide, or cellulose acetate; On the other hand, a fine conductor wire forming step S20 of removing a part of the conductive layer 25 by irradiating with a laser and forming a plurality of straight fine conductor wires arranged substantially parallel to each other at regular intervals; Prepare.
  • the laminate 120 is obtained by forming the conductive layer 25 on the substrate 10 .
  • the substrate 10 is made of polyimide, polyamide, or cellulose acetate.
  • the thickness of the substrate 10 is, for example, 5 ⁇ m to 50 ⁇ m.
  • the shape of the substrate 10 is, for example, a film shape.
  • the dielectric constant of the substrate 10 at 1 MHz is preferably 3.0 to 5.0. More preferable polyimide has a dielectric constant of 3.0 to 4.0 at 1 MHz. A dielectric constant can be measured according to JIS C 2151:2019.
  • the dielectric loss tangent (1 MHz) of the substrate 10 at 1 MHz is preferably 0.0010 to 0.0300.
  • a more preferable dielectric loss tangent (1 MHz) at 1 MHz is 0.0013 to 0.0200.
  • a dielectric loss tangent can be measured according to JIS C 2151:2019.
  • the material of the conductive layer 25 is not particularly limited as long as it has conductivity.
  • Materials for the conductive layer 25 include metals such as Au, Al, Cu, and Ag.
  • Au is preferable as the material of the conductive layer 25 .
  • the thickness of the conductive layer 25 is, for example, 10 nm to 2000 nm.
  • the thickness of the conductive layer 25 is preferably 30 nm to 60 nm when using metal such as Au.
  • the method of forming the conductive layer 25 is not particularly limited.
  • the conductive layer 25 may be formed by vacuum-depositing a metal such as Au (metal conductive layer forming step), or by applying a conductive paint.
  • Conductor thin wire forming step S20 In the fine conductor wire forming step S20, as shown in FIG. 5, a laminate 120 including a conductive layer 25 provided on a substrate 10 is irradiated with a laser to remove part of the conductive layer 25. , to form a plurality of straight thin conductor wires 20 arranged substantially parallel to each other at regular intervals.
  • the interval ⁇ 1 in the width direction orthogonal to the extending direction of the thin conductor wires 20 is, for example, 20 ⁇ m to 300 ⁇ m.
  • the length d1 in the width direction perpendicular to the extending direction of the thin conductor wire 20 is, for example, 20 ⁇ m to 300 ⁇ m.
  • FIG. 5 is an example of an apparatus 200 for manufacturing a terahertz-band bandpass polarizer.
  • a terahertz-band bandpass polarizer manufacturing apparatus 200 includes a pulse laser 30 , a beam expander 31 , a half-wave plate 32 , a polarizing beam splitter 33 , a beam diffuser 34 , an objective lens 35 , and an XYZ stage 36 .
  • the laser generated by the pulse laser 30 enters the beam expander 31.
  • the beam expander 31 adjusts the beam diameter of the laser incident from the pulse laser 30 .
  • the laser whose beam diameter has been adjusted is then incident on the half-wave plate 32 .
  • the laser With a half-wave plate, the laser is given a phase difference of ⁇ /2 (180°).
  • the phase-shifted laser enters the polarizing beam splitter 33 .
  • the polarizing beam splitter 33 reflects the S-polarized laser toward the objective lens 35 and transmits the P-polarized laser toward the beam diffuser 34 .
  • the P-polarized laser that has passed through the polarization beam splitter 33 terminates at the beam diffuser 34 .
  • the laser that has passed through the objective lens 35 is applied to the laminate 120 placed on the XYZ stage 36 .
  • the portion of the conductive layer 25 irradiated with the laser is removed.
  • a laminate 120 is installed on the XYZ stage 36 .
  • the XYZ stage 36 moves the stacked body 120 in the X and Y directions during laser irradiation so that the width and spacing of the fine conductor wires 20 are set to the values set.
  • a plurality of thin conductor wires 20 arranged substantially parallel to each other at regular intervals are formed.
  • the manufacturing method S100 of the terahertz-band bandpass polarizer according to the first embodiment has been described above.
  • the conductive layer forming step S10 is provided, but the conductive layer forming step S10 may not be provided if the laminate 120 can be separately prepared.
  • the fine conductor wires 20 are formed using a laser, but the fine conductor wires 20 may be formed using photolithography.
  • a terahertz bandpass polarizer 100A of a second embodiment according to the present invention will be described with reference to FIGS. 6 and 7.
  • FIG. 1 the same reference numerals are assigned to the same components as in the first embodiment, the description thereof is omitted, and only the different points will be described.
  • FIG. 6 is a plan view of a terahertz bandpass polarizer 100A according to one embodiment of the present invention.
  • FIG. 7 is a cross-sectional view taken along line BB shown in FIG.
  • the terahertz-band bandpass polarizer 100A according to the second embodiment includes a substrate 10 and a plurality of straight lines provided on the substrate 10 and arranged substantially parallel to each other at regular intervals. and a conductive thin wire 20A. Each part will be described below.
  • the thin conductor wires 20A are provided on the substrate 10 .
  • a plurality of thin conductor wires 20A are arranged substantially parallel to each other at regular intervals.
  • the fine conductor wires 20A are provided, for example, at an interval ⁇ 2 in the width direction (X direction) orthogonal to the extending direction (Y direction) of the fine conductor wires 20A.
  • the interval ⁇ 2 is 20 ⁇ m to 300 ⁇ m.
  • the intervals between the thin conductor wires 20A are substantially the same.
  • the interval ⁇ 2 between the thin conductor wires 20A refers to the length between the center of the thin conductor wire 20A in the width direction and the center of the adjacent thin conductor wire 20A in the width direction.
  • the shape of the thin conductor wire 20A is linear.
  • the length d2 in the width direction of the thin conductor wire 20A is preferably 20 ⁇ m to 300 ⁇ m.
  • the average thickness in the Z direction of the thin conductor wires 20A is, for example, 300 nm to 3000 nm.
  • the average thickness in the Z direction of the thin conductor wires 20A is preferably 600 nm to 2000 nm. When using carbon nanotubes, it is preferably 600 nm to 1000 nm.
  • the length of the thin conductor wire 20A in the extending direction (Y direction) is, for example, 0.5 mm to 20 mm.
  • the thin conductor wire 20A may have a protrusion 21A at the end in the width direction.
  • the height h2 of the convex portion 21A is, for example, 500 nm to 5000 ⁇ m if the thin conductor wire 20 has a thickness of 1000 nm. It is preferable that the convex portions 21A are present at both ends in the width direction of the thin conductor wire 20A.
  • the material of the conductor thin wire 20A of the second embodiment is a material that has conductivity, can absorb electromagnetic waves in the terahertz band, and can generate an electric signal from the heat generated by absorbing the electromagnetic waves ( It is not particularly limited as long as it is an electromagnetic wave absorbing thermoelectric material).
  • the material absorbs electromagnetic waves in the terahertz band as heat and converts the generated thermal gradient into an electrical signal, so that the electromagnetic waves in the terahertz band can be detected.
  • the material of the thin conductor wire 20A is, for example, a carbon nanotube. When carbon nanotubes are used, the carbon nanotubes absorb the P-polarized light and generate a temperature gradient. By converting the temperature difference into voltage (photothermoelectromotive force effect), electromagnetic waves in the terahertz band can be detected.
  • Carbon nanotubes used for the thin conductor wires 20A include multi-walled carbon nanotubes and single-walled carbon nanotubes. Single-walled carbon nanotubes are preferred as the carbon nanotubes.
  • metallic carbon nanotubes and semiconducting carbon nanotubes can be used as the carbon nanotubes used for the thin conductor wires 20A.
  • a semiconducting carbon nanotube is preferable as the carbon nanotube.
  • the content of carbon nanotubes in the fine conductor wires 20A is preferably 50% by mass or more. More preferably, the content of carbon nanotubes is 80% by mass or more. More preferably, the content of carbon nanotubes is 90% by mass or more. The higher the content of carbon nanotubes in the fine conductor wires 20A, the better. Therefore, the upper limit of the carbon nanotube content is 100% by mass.
  • the terahertz-band bandpass polarizer 100A according to the second embodiment has been described above.
  • the terahertz-band bandpass polarizer 100A according to the second embodiment transmits only S-polarized light and blocks P-polarized light in the vicinity of the resonance point determined by the spacing ⁇ 2 of the thin conductor wires 20A. That is, the terahertz-band bandpass polarizer 100A has both a polarizing function and a bandpass function.
  • the thin conductor wires 20A are made of an electromagnetic wave absorbing thermoelectric material capable of absorbing terahertz-band electromagnetic waves. Therefore, the terahertz band-pass polarizer 100A can further detect electromagnetic waves in the terahertz band.
  • FIG. 8 is a flow chart of a method for manufacturing a terahertz bandpass polarizer according to the first embodiment.
  • FIG. 9 is a schematic cross-sectional view of a laminate 120A irradiated with laser.
  • the manufacturing method of the terahertz band-pass polarizer is an electromagnetic wave absorbing thermoelectric material layer forming step of obtaining the laminate 120A shown in FIG. 9 by forming the conductive layer 25A on the substrate 10 made of polyimide, polyamide or cellulose acetate.
  • a part of the conductive layer 25A is removed, and the conductive layers 25A are arranged substantially parallel to each other at regular intervals. and a conductor thin wire forming step S20 for forming a plurality of straight conductor thin wires.
  • the laminate 120A is obtained by forming the conductive layer 25A on the substrate 10 .
  • the conductive layer 25A of the second embodiment is a layer made of an electromagnetic wave absorbing thermoelectric material.
  • the substrate 10 is made of polyimide, polyamide, or cellulose acetate.
  • the thickness of the substrate 10 is, for example, 5 ⁇ m to 50 ⁇ m.
  • the shape of the substrate 10 is, for example, a film shape.
  • the material of the conductive layer 25A of the second embodiment is a material that has conductivity, is capable of absorbing electromagnetic waves in the terahertz band, and is capable of generating an electrical signal from heat generated by absorbing the electromagnetic waves.
  • (Electromagnetic wave absorption thermoelectric material) is not particularly limited. The material absorbs electromagnetic waves in the terahertz band as heat and converts the generated thermal gradient into an electrical signal, so that the electromagnetic waves in the terahertz band can be detected.
  • the material of the thin conductor wire 20A is, for example, a carbon nanotube. When carbon nanotubes are used, the carbon nanotubes absorb the P-polarized light and generate a temperature gradient. By converting the temperature difference into voltage (photothermoelectromotive force effect), electromagnetic waves in the terahertz band can be detected.
  • Carbon nanotubes used for the conductive layer 25A include multi-walled carbon nanotubes and single-walled carbon nanotubes. Single-walled carbon nanotubes are preferred as the carbon nanotubes.
  • metallic carbon nanotubes and semiconducting carbon nanotubes can be used as the carbon nanotubes used for the conductive layer 25A.
  • a semiconducting carbon nanotube is preferable as the carbon nanotube.
  • the content of carbon nanotubes in the conductive layer 25A is preferably 50% by mass or more. More preferably, the content of carbon nanotubes is 80% by mass or more. More preferably, the content of carbon nanotubes is 90% by mass or more. The higher the content of carbon nanotubes in the conductive layer 25A, the better. Therefore, the upper limit of the carbon nanotube content is 100% by mass.
  • the thickness of the conductive layer 25A is, for example, 300 nm to 3000 nm.
  • the average thickness of the conductive layer 25A in the Z direction is preferably 600 nm to 2000 nm.
  • the method of forming the conductive layer 25A is not particularly limited.
  • an electromagnetic wave absorbing thermoelectric material film for example, a carbon nanotube film
  • a dispersion liquid in which an electromagnetic wave absorbing thermoelectric material such as carbon nanotubes is dispersed
  • the produced electromagnetic wave absorbing thermoelectric material film is transferred to the substrate 10.
  • the conductive layer 25A may be formed.
  • the conductive layer 25A may be formed by coating the substrate 10 with a dispersion liquid in which an electromagnetic wave absorbing thermoelectric material such as carbon nanotubes is dispersed.
  • Conductor thin wire forming step S20 In the fine conductor wire forming step S20, the laminated body 120A is irradiated with a laser in the same manner as in the first embodiment, thereby removing part of the conductive layer 25A and arranging them substantially parallel to each other at regular intervals. to form a plurality of straight thin conductor wires 20A.
  • the manufacturing method S100A of the terahertz-band bandpass polarizer according to the second embodiment has been described above.
  • the present embodiment includes the electromagnetic wave absorbing thermoelectric material layer forming step S10A, the electromagnetic wave absorbing thermoelectric material layer forming step S10A may not be provided if the laminate 120A can be prepared separately.
  • the conditions in the examples are one example of conditions adopted for confirming the feasibility and effect of the present invention, and the present invention is based on this one example of conditions. It is not limited. Various conditions can be adopted in the present invention as long as the objects of the present invention are achieved without departing from the gist of the present invention.
  • Kapton registered trademark
  • 50EN thickness 12.5 ⁇ m, dielectric constant 3.2 (1 MHz), dielectric loss tangent 0.0070 (1 MHz)
  • Uniamide registered trademark
  • EX thickness 25 ⁇ m
  • cellulose acetate as a substrate
  • a membrane 125 ⁇ m thick
  • a metal laminate was obtained by forming an Au film with a film thickness of 50 nm on a substrate using a vacuum deposition method.
  • Kapton registered trademark 50EN was used as the substrate.
  • the carbon nanotube dispersion was filtered through a membrane to obtain a carbon nanotube film (thickness: 1 ⁇ m).
  • the obtained carbon nanotube film was transferred to a substrate to obtain a CNT laminate.
  • Example 1 A terahertz-band bandpass polarizer manufacturing apparatus (objective lens: 10 ⁇ ) shown in FIG. 5 was used to form the thin conductor wires. While irradiating the Au film of the metal laminate on the Kapton substrate with a pulse laser (wavelength 532 nm), the XYZ stage was moved so that the conductor fine line spacing was 200 ⁇ m and the conductor fine line width was 200 ⁇ m. A zonal bandpass polarizer was obtained. In addition, the laser irradiation conditions were performed under the following conditions. Pulse width: 3ns Pulse energy: 50nJ Repetition rate: 1kHz Beam diameter: f2mm Overlap ratio: 15%
  • Example 2 While irradiating the Au film of the metal laminate on the Kapton substrate with a laser under the same conditions as in Example 1, the XYZ stage was moved so that the conductor fine line spacing was 100 ⁇ m and the conductor fine line width was 100 ⁇ m. No. 2 terahertz bandpass polarizer was obtained.
  • Example 3 While irradiating the Au film of the metal laminate on the Kapton substrate with a laser under the same conditions as in Example 1, the XYZ stage was moved so that the conductor fine line spacing was 60 ⁇ m and the conductor fine line width was 60 ⁇ m. No. 3 terahertz bandpass polarizer was obtained.
  • Example 4 While irradiating the Au film of the metal laminate on the Kapton substrate with a laser under the same conditions as in Example 1, the XYZ stage was moved so that the conductor fine line spacing was 40 ⁇ m and the conductor fine line width was 40 ⁇ m. No. 4 terahertz bandpass polarizer was obtained.
  • Example 5 A terahertz bandpass polarizer of Example 5 was obtained by vacuum deposition using a shadow mask with a conductor fine line spacing of 200 ⁇ m and a conductor fine line width of 200 ⁇ m for the Au film of the metal laminate on the uniamide substrate. .
  • Example 6 The terahertz bandpass polarizer of Example 6 was applied to the Au film of the metal laminate on the cellulose acetate membrane substrate by a vacuum deposition method using a shadow mask having a fine conductor line spacing of 100 ⁇ m and a conductor fine line width of 100 ⁇ m. Obtained.
  • Example 7 The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 200 ⁇ m and the conductor fine line width was 200 ⁇ m. got
  • Example 8 The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 100 ⁇ m and the conductor fine line width was 100 ⁇ m. got
  • Example 9 The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 60 ⁇ m and the conductor fine line width was 60 ⁇ m. got
  • Example 10 The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 40 ⁇ m and the conductor fine line width was 40 ⁇ m. got
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 1 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 1 transmits S-polarized light and blocks P-polarized light near the resonance point of 0.7 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 2 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 2 transmits S-polarized light and blocks P-polarized light near the resonance point of 1.3 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 3 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 3 transmits S-polarized light and blocks P-polarized light near the resonance point of 2 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 4 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 4 transmits S-polarized light and blocks P-polarized light near the resonance point of 2.6 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 5 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 1 transmits S-polarized light and blocks P-polarized light near the resonance point of 0.7 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 6 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 1 transmits S-polarized light and blocks P-polarized light near the resonance point of 1.3 THz.
  • the terahertz bandpass polarizers of Examples 1 to 6 can transmit S-polarized light and block P-polarized light in the vicinity of specific frequencies. Moreover, it was confirmed that the transmission frequency can be shifted to the high frequency side by reducing the distance between the conductor thin wires.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 7 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 7 transmits S-polarized light and blocks P-polarized light near the resonance point of 0.7 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 8 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 8 transmits S-polarized light and blocks P-polarized light near the resonance point of 1.3 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 9 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 9 transmits S-polarized light and blocks P-polarized light near the resonance point of 2 THz.
  • the transmission spectrum of the terahertz-band bandpass polarizer of Example 10 is shown in FIG.
  • the vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 10 transmits S-polarized light and blocks P-polarized light near the resonance point of 3 THz.
  • the terahertz bandpass polarizers of Examples 7 to 10 can transmit S-polarized light and block P-polarized light in the vicinity of specific frequencies. Moreover, it was confirmed that the transmission frequency can be shifted to the high frequency side by reducing the distance between the conductor thin wires.
  • the terahertz band-pass polarizers of Examples 7-10 had lower transmittances than the terahertz-band band-pass polarizers of Examples 1-6. This is believed to be due to plasmon resonance of carbon nanotubes.
  • Example 4 The height profile of Example 4 is shown in FIG. The vertical axis indicates height (nm), and the horizontal axis indicates displacement ( ⁇ m) in the X direction. It was confirmed that the terahertz bandpass polarizer of Example 4 had protrusions (burrs) at both ends in the width direction. In the case of FIG. 20, convex portions of 40 nm or more were confirmed.
  • the terahertz-band bandpass polarizer of the present disclosure has both a polarization function and a bandpass function, so the number of optical elements can be reduced. Therefore, the terahertz bandpass polarizer of the present disclosure has high industrial applicability.
  • Substrate 20 Conductive thin wire, 100 Terahertz band-pass polarizer

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Abstract

This terahertz bandpass polarizer comprises: a substrate comprising a polyimide, a polyamide, or cellulose acetate; and a plurality of linear fine conductor wires provided on the substrate and arranged substantially parallel at a fixed interval from each other, the interval in a width direction orthogonal to the extension direction of the fine conductor wires being 20-300 µm.

Description

テラヘルツ帯バンドパス偏光子およびテラヘルツ帯バンドパス偏光子の製造方法Terahertz-band bandpass polarizer and method for manufacturing terahertz-band bandpass polarizer
　本発明は、テラヘルツ帯バンドパス偏光子およびテラヘルツ帯バンドパス偏光子の製造方法に関する。
　本願は、２０２２年１月２８日に、日本に出願された特願２０２２－１１４２３号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a terahertz bandpass polarizer and a method for manufacturing a terahertz bandpass polarizer.
This application claims priority based on Japanese Patent Application No. 2022-11423 filed in Japan on January 28, 2022, the content of which is incorporated herein.
　次世代移動通信システムにおいて、電波のキャリア周波数帯として、テラヘルツ帯（ＴＨｚ：１０１２Ｈｚ）の活用が見込まれている。そのため、テラヘルツ帯送受信機やテラヘルツ帯用光学素子などの開発が行われている。ここでテラヘルツ帯は例えば、０．１ＴＨｚ～３０ＴＨｚの間をいう。 In next-generation mobile communication systems, it is expected that the terahertz band (THz: 10 12 Hz) will be used as a carrier frequency band for radio waves. Therefore, terahertz band transceivers and optical elements for the terahertz band are being developed. Here, the terahertz band means, for example, between 0.1 THz and 30 THz.
　テラヘルツ帯用光学素子としては、金属メッシュ、メタマテリアルを用いたバンドパスフィルタ（特定の周波数成分のみを透過する）がある。 As an optical element for the terahertz band, there is a band-pass filter (which transmits only specific frequency components) using a metal mesh or metamaterial.
　他のテラヘルツ帯用光学素子としては、特許文献１に記載のワイヤグリッド構造による偏光板がある。 As another optical element for the terahertz band, there is a polarizing plate with a wire grid structure described in Patent Document 1.
日本国特許第５４９７５２２号公報Japanese Patent No. 5497522
　しかし、従来のテラヘルツ帯用バンドパスフィルタは、偏光制御することができなかった。同様に、従来のテラヘルツ帯用偏光子は、特定の周波数成分のみを抽出することができなかった。そのため、偏光制御および特定の周波数成分の抽出を行うためには、複数の光学素子を組み合わせなければならなかった。 However, conventional bandpass filters for the terahertz band were unable to control polarization. Similarly, conventional polarizers for the terahertz band cannot extract only specific frequency components. Therefore, in order to perform polarization control and extraction of specific frequency components, it has been necessary to combine a plurality of optical elements.
　本発明は、上記の事情を鑑みなされた発明であり、偏光機能およびバンドパス機能を兼ね備えたテラヘルツ帯バンドパス偏光子およびテラヘルツ帯バンドパス偏光子の製造方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a terahertz band-pass polarizer having both a polarization function and a band-pass function, and a method for manufacturing the terahertz band band-pass polarizer.
　前記課題を解決するために、本発明は以下の手段を提案している。
＜１＞　本発明の一態様に係るテラヘルツ帯バンドパス偏光子は、ポリイミド、ポリアミド、またはセルロースアセテートからなる基板と、前記基板上に設けられ、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線と、を備え、前記導電体細線の延在方向と直交する幅方向の前記間隔が２０μｍ～３００μｍである。 In order to solve the above problems, the present invention proposes the following means.
<1> A terahertz bandpass polarizer according to an aspect of the present invention includes a substrate made of polyimide, polyamide, or cellulose acetate, and a plurality of substrates provided on the substrate and arranged substantially parallel to each other at regular intervals. and a linear thin conductor wire, and the interval in the width direction perpendicular to the extending direction of the conductor thin wire is 20 μm to 300 μm.
＜２＞　上記＜１＞に記載のテラヘルツ帯バンドパス偏光子は、前記基板の厚さが５μｍ～５０μｍであってもよい。 <2> In the terahertz bandpass polarizer described in <1> above, the substrate may have a thickness of 5 μm to 50 μm.
＜３＞　上記＜１＞または＜２＞に記載のテラヘルツ帯バンドパス偏光子は、前記基板の比誘電率が３．０～５．０であってもよい。 <3> In the terahertz-band bandpass polarizer described in <1> or <2> above, the substrate may have a dielectric constant of 3.0 to 5.0.
＜４＞　上記＜１＞～＜３＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子は、前記基板の誘電正接は、０．００１０～０．０３００であってもよい。 <4> In the terahertz bandpass polarizer according to any one of <1> to <3> above, the substrate may have a dielectric loss tangent of 0.0010 to 0.0300.
＜５＞　上記＜１＞～＜４＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子は、前記導電体細線の前記幅方向の長さが２０μｍ～３００μｍであってもよい。 <5> In the terahertz bandpass polarizer according to any one of <1> to <4> above, the length of the conductor thin wire in the width direction may be 20 μm to 300 μm.
＜６＞　上記＜１＞～＜５＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子は、前記導電体細線が金属からなってもよい。 <6> In the terahertz bandpass polarizer according to any one of <1> to <5> above, the fine conductor wires may be made of metal.
＜７＞　上記＜６＞に記載のテラヘルツ帯バンドパス偏光子は、前記金属が、Ａｕ、Ａｌ、Ｃｕ、またはＡｇであってもよい。 <7> In the terahertz-band bandpass polarizer described in <6> above, the metal may be Au, Al, Cu, or Ag.
＜８＞　上記＜１＞～＜５＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子は、前記導電体細線がテラヘルツ帯の電磁波を吸収可能であり、かつ、前記電磁波を吸収して発生した熱から電気信号を発生可能な電磁波吸収熱電材料からなってもよい。 <8> In the terahertz band-pass polarizer according to any one of <1> to <5> above, the fine conductor wire is capable of absorbing an electromagnetic wave in the terahertz band, and is capable of absorbing the electromagnetic wave. It may be made of an electromagnetic wave absorbing thermoelectric material capable of generating an electrical signal from generated heat.
＜９＞　上記＜８＞に記載のテラヘルツ帯バンドパス偏光子は、前記電磁波吸収熱電材料が、カーボンナノチューブであってもよい。 <9> In the terahertz-band bandpass polarizer according to <8> above, the electromagnetic wave absorbing thermoelectric material may be a carbon nanotube.
＜１０＞　上記＜１＞～＜９＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子は、前記基板の板厚方向に平行であり、前記導電体細線の前記幅方向に平行な断面において、前記導電体細線の幅方向の端部に凸部を有してもよい。 <10> The terahertz-band bandpass polarizer according to any one of the above <1> to <9> has a cross section parallel to the plate thickness direction of the substrate and parallel to the width direction of the conductor thin wire. WHEREIN: You may have a convex part in the edge part of the width direction of the said conductor fine line.
＜１１＞　上記＜１０＞に記載のテラヘルツ帯バンドパス偏光子は、前記凸部の高さが、２０ｎｍ～２μｍであってもよい。 <11> In the terahertz bandpass polarizer according to <10> above, the height of the convex portion may be 20 nm to 2 μm.
＜１２＞　本発明の一態様に係るテラヘルツ帯バンドパス偏光子の製造方法は、ポリイミド、ポリアミド、またはセルロースアセテートからなる基板と、前記基板上に設けられる導電層と、を備える積層体に対し、レーザーを照射することで、前記導電層の一部を除去し、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線を形成する、導電体細線形成工程を備える。 <12> A method for producing a terahertz-band bandpass polarizer according to an aspect of the present invention is a laminate comprising a substrate made of polyimide, polyamide, or cellulose acetate, and a conductive layer provided on the substrate, A thin conductor wire forming step of removing a part of the conductive layer by irradiating with a laser and forming a plurality of straight conductor thin wires arranged substantially parallel to each other at regular intervals.
＜１３＞　上記＜１２＞に記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記基板の厚さが５μｍ～５０μｍであってもよい。 <13> In the method for producing a terahertz-band bandpass polarizer according to <12> above, the substrate may have a thickness of 5 μm to 50 μm.
＜１４＞　上記＜１２＞または＜１３＞に記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記基板の比誘電率が３．０～５．０であってもよい。 <14> In the method for producing a terahertz-band bandpass polarizer according to <12> or <13> above, the substrate may have a dielectric constant of 3.0 to 5.0.
＜１５＞　上記＜１２＞～＜１４＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記基板の誘電正接は、０．００１０～０．０３００であってもよい。 <15> In the method for producing a terahertz-band bandpass polarizer according to any one of <12> to <14> above, the substrate may have a dielectric loss tangent of 0.0010 to 0.0300.
＜１６＞　上記＜１２＞～＜１５＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記導電体細線の延在方向と直交する幅方向の前記間隔が２０μｍ～３００μｍであってもよい。 <16> In the method for producing a terahertz band-pass polarizer according to any one of <12> to <15> above, the spacing in the width direction orthogonal to the extending direction of the fine conductor wires is 20 μm to 300 μm. may be
＜１７＞　上記＜１２＞～＜１６＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記導電体細線の延在方向と直交する幅方向の長さが２０μｍ～３００μｍであってもよい。 <17> In the method for producing a terahertz-band bandpass polarizer according to any one of the above <12> to <16>, the length in the width direction orthogonal to the extending direction of the fine conductor wires is 20 μm to 300 μm. may be
＜１８＞　上記＜１２＞～＜１７＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記導電層が金属からなってもよい。 <18> In the method for producing a terahertz bandpass polarizer according to any one of <12> to <17> above, the conductive layer may be made of metal.
＜１９＞　上記＜１８＞に記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記金属が、Ａｕ、Ａｌ、Ｃｕ、またはＡｇであってもよい。 <19> In the method for producing a terahertz-band bandpass polarizer according to <18> above, the metal may be Au, Al, Cu, or Ag.
＜２０＞　上記＜１８＞または＜１９＞に記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記基板上に蒸着によって導電層を形成する金属導電層形成工程を、更に備えてもよい。 <20> The method for producing a terahertz band-pass polarizer according to <18> or <19> above may further include a metal conductive layer forming step of forming a conductive layer on the substrate by vapor deposition.
＜２１＞　上記＜１２＞～＜１７＞のいずれか１つに記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記導電層がテラヘルツ帯の電磁波を吸収可能であり、かつ、前記電磁波を吸収して発生した熱から電気信号を発生可能な電磁波吸収熱電材料からなってもよい。 <21> In the method for producing a terahertz band bandpass polarizer according to any one of <12> to <17> above, the conductive layer is capable of absorbing an electromagnetic wave in the terahertz band, and absorbs the electromagnetic wave. It may be made of an electromagnetic wave absorbing thermoelectric material capable of generating an electric signal from the heat generated by heating.
＜２２＞　上記＜２１＞に記載のテラヘルツ帯バンドパス偏光子の製造方法は、前記電磁波吸収熱電材料がカーボンナノチューブであってもよい。 <22> In the method for producing a terahertz-band bandpass polarizer according to <21> above, the electromagnetic wave absorbing thermoelectric material may be a carbon nanotube.
＜２３＞　上記＜２２＞に記載のテラヘルツ帯バンドパス偏光子の製造方法は、カーボンナノチューブ分散液を濾過することで、カーボンナノチューブフィルムを作製し、前記カーボンナノチューブフィルムを前記基板に転写することで、前記導電層を形成する電磁波吸収熱電材料層形成工程をさらに備えてもよい。 <23> The method for producing the terahertz-band bandpass polarizer according to <22> above comprises filtering a carbon nanotube dispersion liquid to produce a carbon nanotube film, and transferring the carbon nanotube film to the substrate. The method may further include an electromagnetic wave absorbing thermoelectric material layer forming step for forming the conductive layer.
　本発明の上記態様によれば、偏光機能およびバンドパス機能を兼ね備えたテラヘルツ帯バンドパス偏光子およびテラヘルツ帯バンドパス偏光子の製造方法を提供することができる。 According to the above aspect of the present invention, it is possible to provide a terahertz bandpass polarizer having both a polarizing function and a bandpass function, and a method for manufacturing the terahertz bandpass polarizer.
本発明の第１実施形態に係るテラヘルツ帯バンドパス偏光子の平面図である。1 is a plan view of a terahertz bandpass polarizer according to a first embodiment of the present invention; FIG. 図１に示されたＡ－Ａ線に沿う断面図である。FIG. 2 is a cross-sectional view taken along line AA shown in FIG. 1; 本発明の第１実施形態に係るテラヘルツ帯バンドパス偏光子の製造方法のフローチャートである。3 is a flow chart of a method for manufacturing a terahertz bandpass polarizer according to the first embodiment of the present invention; 積層体の断面模式図である。It is a cross-sectional schematic diagram of a laminated body. テラヘルツ帯バンドパス偏光子の製造装置の一例を説明する説明図である。BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing explaining an example of the manufacturing apparatus of a terahertz band bandpass polarizer. 本発明の第２実施形態に係るテラヘルツ帯バンドパス偏光子の平面図である。FIG. 4 is a plan view of a terahertz bandpass polarizer according to a second embodiment of the present invention; 図６に示されたＢ－Ｂ線に沿う断面図である。FIG. 7 is a cross-sectional view taken along line BB shown in FIG. 6; 本発明の第２実施形態に係るテラヘルツ帯バンドパス偏光子の製造方法のフローチャートである。8 is a flow chart of a method for manufacturing a terahertz bandpass polarizer according to a second embodiment of the present invention; 積層体の断面模式図である。It is a cross-sectional schematic diagram of a laminated body. 実施例１のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。4 is a diagram showing a transmission spectrum of the terahertz-band bandpass polarizer of Example 1. FIG. 実施例２のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 2; 実施例３のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 3; 実施例４のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 4; 実施例５のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 5; 実施例６のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 6; 実施例７のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 12 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 7; 実施例８のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 8; 実施例９のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 12 is a diagram showing a transmission spectrum of the terahertz band-pass polarizer of Example 9; 実施例１０のテラヘルツ帯バンドパス偏光子の透過スペクトルを示す図である。FIG. 10 is a diagram showing a transmission spectrum of the terahertz bandpass polarizer of Example 10; 実施例４のテラヘルツ帯バンドパス偏光子の高さプロファイルを示す図である。FIG. 10 is a diagram showing the height profile of the terahertz bandpass polarizer of Example 4;
　本発明者らが鋭意検討したところ、ポリイミド、ポリアミド、またはセルロースアセテートからなる基板の上に、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線を設けることで、導電体細線の間隔などに依存した共振点付近でＳ偏光が透過し、Ｐ偏光が遮断されることを見出した。本発明は、上記の知見に基づいて完成した発明である。本明細書において、導電体細線に平行な偏光をＳ偏光とし、導電体細線２０に垂直な偏光をＰ偏光とする。以下、本発明のテラヘルツ帯バンドパス偏光子について、説明する。 As a result of intensive studies by the present inventors, it has been found that a plurality of linear thin conductor wires arranged substantially parallel to each other at regular intervals on a substrate made of polyimide, polyamide, or cellulose acetate can provide a conductor. It was found that S-polarized light is transmitted and P-polarized light is blocked near the resonance point, which depends on the spacing of the thin wires. The present invention is an invention completed based on the above findings. In this specification, polarized light parallel to the conductor thin wire is defined as S-polarized light, and polarized light perpendicular to the conductive thin wire 20 is defined as P-polarized light. The terahertz bandpass polarizer of the present invention will be described below.
（第１実施形態）
　以下、第１実施形態に係るテラヘルツ帯バンドパス偏光子１００について、図１および図２を用いて説明する。以下の説明で用いる図面は、特徴をわかりやすくするために便宜上特徴となる部分を拡大して示している場合があり、各構成要素の寸法比率などは実際とは異なっていることがある。以下の説明において例示される材料、寸法等は一例であって、本発明はそれらに限定されるものではなく、本発明の効果を奏する範囲で適宜変更して実施することが可能である。 (First embodiment)
The terahertz-band bandpass polarizer 100 according to the first embodiment will be described below with reference to FIGS. 1 and 2. FIG. In the drawings used in the following description, characteristic parts may be shown enlarged for convenience in order to make the characteristics easier to understand, and the dimensional ratio of each component may differ from the actual one. The materials, dimensions, etc. exemplified in the following description are examples, and the present invention is not limited to them, and can be implemented with appropriate modifications within the scope of the present invention.
　まず方向について定義する。基板１０の表面と平行な一方向であり、かつ、導電体細線２０の延在方向をＹ方向とする。基板１０の表面に沿って、Ｙ方向と直交する方向をＸ方向（幅方向）とする。Ｚ方向は、基板１０の表面と垂直な方向（板厚方向）である。Ｚ方向は、Ｘ方向およびＹ方向と直交する方向である。以下、＋Ｚ方向を「上」、－Ｚ方向を「下」と表現する場合がある。上下は、必ずしも重力が加わる方向とは一致しない。 First, define the direction. The Y direction is one direction parallel to the surface of the substrate 10 and the extending direction of the fine conductor wires 20 . The direction perpendicular to the Y direction along the surface of the substrate 10 is defined as the X direction (width direction). The Z direction is a direction (thickness direction) perpendicular to the surface of the substrate 10 . The Z direction is a direction perpendicular to the X and Y directions. Hereinafter, the +Z direction may be expressed as “up” and the −Z direction as “down”. Up and down do not necessarily match the direction in which gravity is applied.
　図１は、本発明の第１実施形態に係るテラヘルツ帯バンドパス偏光子の平面図である。図２は、図１に示されたＡ－Ａ線に沿う断面図である。図１および図２に示すように、第１実施形態に係るテラヘルツ帯バンドパス偏光子１００は、基板１０と、基板１０上に設けられ、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線２０とを備える。ここで、略平行とは、基板１０の対向視で、導電体細線２０と他の導電体細線２０とがなす角度が±５°以下であることをいう。以下、各部について説明する。なお、本明細書中において、「～」を用いて表される数値範囲は、「～」の前後に記載される数値を下限値および上限値として含む範囲を意味する。 FIG. 1 is a plan view of the terahertz bandpass polarizer according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view along line AA shown in FIG. As shown in FIGS. 1 and 2, the terahertz-band bandpass polarizer 100 according to the first embodiment includes a substrate 10 and a plurality of straight lines provided on the substrate 10 and arranged substantially parallel to each other at regular intervals. and a thin conductor wire 20 having a shape. Here, “substantially parallel” means that the angle formed by the thin conductor wire 20 and another thin conductor wire 20 is ±5° or less when viewed from the opposite side of the substrate 10 . Each part will be described below. In this specification, a numerical range represented by "-" means a range including the numerical values before and after "-" as lower and upper limits.
「基板」
　基板１０は、ポリイミド、ポリアミド、またはセルロースアセテートからなる。即ち、基板１０は、ポリマー基板である。基板１０の厚さは、偏光機能およびバンドパス機能を兼ね備えることができれば特に限定されない。基板１０の厚さは、例えば、５μｍ～５０μｍである。好ましい基板１０の厚さとしては、１０μｍ～３０μｍである。特定のポリマー基板を用いることで、特定の波長において、Ｓ偏光のみを透過することができる。また、基板１０は平坦であり、かつ、基板１０上に複数の直線状の導電体細線２０を直接設けることが好ましい。樹脂の凹凸が大きい場合、特定の波長において、Ｓ偏光のみを透過しにくくなる場合がある。また、基板１０上に複数の直線状の導電体細線２０を直接設けることで、より偏光特性を向上することができる。 "substrate"
Substrate 10 is made of polyimide, polyamide, or cellulose acetate. That is, substrate 10 is a polymer substrate. The thickness of the substrate 10 is not particularly limited as long as it can have both a polarization function and a bandpass function. The thickness of the substrate 10 is, for example, 5 μm to 50 μm. A preferable thickness of the substrate 10 is 10 μm to 30 μm. By using a specific polymer substrate, only S-polarized light can be transmitted at a specific wavelength. Further, it is preferable that the substrate 10 is flat and that the plurality of thin conductor wires 20 are directly provided on the substrate 10 . If the unevenness of the resin is large, it may become difficult to transmit only S-polarized light at a specific wavelength. Further, by directly providing a plurality of thin conductor wires 20 on the substrate 10, the polarization characteristics can be further improved.
　基板１０の１ＭＨｚのときの比誘電率は、３．０～５．０であることが好ましい。より好ましいポリイミドの１ＭＨｚのときの比誘電率は、３．０～４．０である。比誘電率は、ＪＩＳ　Ｃ　２１５１：２０１９に準拠して測定することができる。 The dielectric constant of the substrate 10 at 1 MHz is preferably 3.0 to 5.0. More preferable polyimide has a dielectric constant of 3.0 to 4.0 at 1 MHz. A dielectric constant can be measured according to JIS C 2151:2019.
　基板１０の１ＭＨｚのときの誘電正接（１ＭＨｚ）は、０．００１０～０．０３００であることが好ましい。より好ましい１ＭＨｚのときの誘電正接（１ＭＨｚ）は、０．００１３～０．０２００である。誘電正接は、ＪＩＳ　Ｃ　２１５１：２０１９に従って測定することができる。 The dielectric loss tangent (1 MHz) of the substrate 10 at 1 MHz is preferably 0.0010 to 0.0300. A more preferable dielectric loss tangent (1 MHz) at 1 MHz is 0.0013 to 0.0200. A dielectric loss tangent can be measured according to JIS C 2151:2019.
　基板１０の形状は、偏光機能およびバンドパス機能を兼ね備えることができれば特に限定されない。基板１０の形状としては、基板状、フィルム状、多孔質状などが挙げられる。基板１０の形状としては、好ましくはフィルム状である。 The shape of the substrate 10 is not particularly limited as long as it can have both a polarization function and a bandpass function. The shape of the substrate 10 includes a substrate shape, a film shape, a porous shape, and the like. The substrate 10 preferably has a film shape.
　「導電体細線」
　導電体細線２０は、基板１０上に設けられる。また、導電体細線２０は、互いに一定の間隔で略平行に複数配置される。図１に示す通り、導電体細線２０は、例えば、導電体細線２０の延在方向（Ｙ方向）と直交する幅方向（Ｘ方向）に間隔ε１で離れて設けられる。間隔ε１の間隔を変えることで、透過するＳ偏光の周波数を制御することができる。間隔ε１は、例えば、２０μｍ～３００μｍである。各導電体細線２０間の間隔は略同一である。なお、導電体細線２０の間隔ε１は、導電体細線２０の幅方向の中心と隣接する導電体細線２０の幅方向の中心との間の長さをいう。 "Conductor thin wire"
A thin conductor wire 20 is provided on the substrate 10 . A plurality of thin conductor wires 20 are arranged substantially parallel to each other at regular intervals. As shown in FIG. 1, the thin conductor wires 20 are provided, for example, at intervals ε1 in the width direction (X direction) orthogonal to the extending direction (Y direction) of the conductor thin wires 20 . By changing the interval ε1, the frequency of transmitted S-polarized light can be controlled. The interval ε1 is, for example, 20 μm to 300 μm. The intervals between the thin conductor wires 20 are substantially the same. The interval ε1 between the conductor thin wires 20 is the length between the center of the conductor thin wire 20 in the width direction and the center of the adjacent conductor thin wire 20 in the width direction.
　導電体細線２０の幅方向の間隔は以下の方法で測定することができる。光学顕微鏡などを用いて、テラヘルツ帯バンドパス偏光子１００を観察して観察像を得る。得られた観察像において、導電体細線２０の幅方向の間隔を５か所測定する。得られた５つの間隔の値の平均値を導電体細線２０の幅方向の間隔とする。 The distance between the conductor thin wires 20 in the width direction can be measured by the following method. An observation image is obtained by observing the terahertz bandpass polarizer 100 using an optical microscope or the like. In the obtained observation image, the widthwise intervals of the conductor thin wires 20 are measured at five points. The average value of the obtained five spacing values is used as the spacing in the width direction of the thin conductor wires 20 .
　導電体細線２０の形状は、直線状である。導電体細線２０の幅方向の長さｄ１は２０μｍ～３００μｍであることが好ましい。導電体細線２０の幅方向の長さｄ１を変えることで、透過するＳ偏光の周波数を制御することができる。 The shape of the thin conductor wire 20 is linear. The length d1 in the width direction of the thin conductor wire 20 is preferably 20 μm to 300 μm. By changing the width-direction length d1 of the thin conductor wire 20, the frequency of the transmitted S-polarized light can be controlled.
　導電体細線２０の幅方向の長さは以下の方法で測定することができる。幅方向の間隔と同様な方法で、テラヘルツ帯バンドパス偏光子１００を観察する。得られた観察像において５つの導電体細線２０の幅方向の長さを測定し、その平均値を導電体細線２０の幅方向の長さとする。 The length of the conductor fine wire 20 in the width direction can be measured by the following method. The terahertz bandpass polarizer 100 is observed in a manner similar to the width direction spacing. The lengths in the width direction of the five fine conductor wires 20 are measured in the obtained observation image, and the average value is taken as the length in the width direction of the fine conductor wires 20 .
　導電体細線２０のＺ方向の平均厚さは、例えば、１０ｎｍ～２０００ｎｍである。導電体細線２０のＺ方向の平均厚さは、Ａｕなどの金属を用いる場合は、好ましくは、３０ｎｍ～６０ｎｍである。 The average thickness of the conductor thin wires 20 in the Z direction is, for example, 10 nm to 2000 nm. The average thickness of the thin conductor wires 20 in the Z direction is preferably 30 nm to 60 nm when using a metal such as Au.
　導電体細線２０のＺ方向の平均厚さは、例えば、共焦点レーザー顕微鏡を用い、テラヘルツ帯バンドパス偏光子１００の高さプロファイルを計測することで、測定することができる。導電体細線２０のＺ方向の平均厚さは、ランダムに選択した５つの導電体細線２０の高さを測定し、その平均値を導電体細線２０のＺ方向の平均厚さとする。 The average thickness of the conductive fine wire 20 in the Z direction can be measured, for example, by measuring the height profile of the terahertz bandpass polarizer 100 using a confocal laser microscope. The average thickness of the thin conductor wires 20 in the Z direction is obtained by measuring the heights of five randomly selected thin conductor wires 20 and taking the average value as the average thickness of the thin conductor wires 20 in the Z direction.
　導電体細線２０の延在方向（Ｙ方向）の長さは、例えば、０．５ｍｍ～２０ｍｍである。 The length of the thin conductor wire 20 in the extending direction (Y direction) is, for example, 0.5 mm to 20 mm.
　基板１０の板厚方向に平行であり、導電体細線２０の幅方向に平行な断面において、導電体細線２０は、幅方向の端部に凸部２１を有していても良い。凸部２１の高さｈ１は、例えば、２０ｎｍ～２μｍである。凸部２１は、導電体細線２０の幅方向の両端にあることが好ましい。凸部２１の高さｈ１は、導電体細線２０の幅方向の中央部分から凸部２１で最も高い部分までのＺ方向の長さである。 In a cross section parallel to the plate thickness direction of the substrate 10 and parallel to the width direction of the conductor thin wire 20, the conductor thin wire 20 may have a convex portion 21 at the end in the width direction. The height h1 of the convex portion 21 is, for example, 20 nm to 2 μm. It is preferable that the protrusions 21 are located at both ends of the thin conductor wire 20 in the width direction. The height h1 of the convex portion 21 is the length in the Z direction from the central portion in the width direction of the thin conductor wire 20 to the highest portion of the convex portion 21 .
　導電体細線２０のＺ方向の凸部２１の高さは、例えば、共焦点レーザー顕微鏡を用い、テラヘルツ帯バンドパス偏光子１００の高さプロファイルを計測することで測定することができる。具体的には、５つの導電体細線２０を選択し、各導電体細線２０の幅方向の中央部分から凸部２１の最も高い部分までのＺ方向の長さを、共焦点レーザー顕微鏡を用いて測定する。得られた測定値の平均値を導電体細線２０の凸部２１の高さとすることができる。 The height of the protrusions 21 in the Z direction of the conductor fine wires 20 can be measured, for example, by measuring the height profile of the terahertz bandpass polarizer 100 using a confocal laser microscope. Specifically, five fine conductor wires 20 are selected, and the length in the Z direction from the central portion in the width direction of each fine conductor wire 20 to the highest portion of the convex portion 21 is measured using a confocal laser microscope. Measure. The average value of the obtained measured values can be used as the height of the convex portion 21 of the fine conductor wire 20 .
　第１実施形態の導電体細線２０の材質は、導電性を有するのであれば特に限定されない。導電体細線２０の材質としては、Ａｕ、Ａｌ、Ｃｕ、またはＡｇなどの金属が挙げられる。導電体細線２０の材質としては、Ａｕが好ましい。導電体細線２０に金属を用いると、例えば、カーボンナノチューブなどよりも高い透過率を得ることができる。 The material of the thin conductor wire 20 of the first embodiment is not particularly limited as long as it has conductivity. The material of the thin conductor wire 20 includes metals such as Au, Al, Cu, and Ag. Au is preferable as the material of the thin conductor wire 20 . If metal is used for the thin conductor wire 20, it is possible to obtain a higher transmittance than, for example, carbon nanotubes.
　以上、第１実施形態に係るテラヘルツ帯バンドパス偏光子１００について説明した。第１実施形態に係るテラヘルツ帯バンドパス偏光子１００は、導電体細線２０の間隔ε１等によって、定まる共振点付近で、Ｓ偏光のみを透過し、Ｐ偏光を遮断する。即ち、テラヘルツ帯バンドパス偏光子１００は、偏光機能およびバンドパス機能を兼ね備える。 The terahertz-band bandpass polarizer 100 according to the first embodiment has been described above. The terahertz-band bandpass polarizer 100 according to the first embodiment transmits only S-polarized light and blocks P-polarized light in the vicinity of the resonance point determined by the interval ε1 of the conductor thin wires 20 and the like. That is, the terahertz-band bandpass polarizer 100 has both a polarizing function and a bandpass function.
　次に、テラヘルツ帯バンドパス偏光子の製造方法について、図３および図４を用いて説明する。図３は、第１実施形態に係るテラヘルツ帯バンドパス偏光子の製造方法のフローチャートである。図４は、レーザーを照射する積層体１２０の断面模式図である。テラヘルツ帯バンドパス偏光子の製造方法は、ポリイミド、ポリアミド、またはセルロースアセテートからなる基板１０上に、導電層２５を形成することで、積層体１２０を得る導電層形成工程Ｓ１０と、積層体１２０に対し、レーザーを照射することで、導電層２５の一部を除去し、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線を形成する、導電体細線形成工程Ｓ２０と、を備える。 Next, a method for manufacturing a terahertz band-pass polarizer will be described with reference to FIGS. 3 and 4. FIG. FIG. 3 is a flowchart of a method for manufacturing a terahertz bandpass polarizer according to the first embodiment. FIG. 4 is a schematic cross-sectional view of the laminate 120 irradiated with laser. The method for producing a terahertz band-pass polarizer includes a conductive layer forming step S10 of obtaining a laminate 120 by forming a conductive layer 25 on a substrate 10 made of polyimide, polyamide, or cellulose acetate; On the other hand, a fine conductor wire forming step S20 of removing a part of the conductive layer 25 by irradiating with a laser and forming a plurality of straight fine conductor wires arranged substantially parallel to each other at regular intervals; Prepare.
「導電層形成工程Ｓ１０」
　導電層形成工程Ｓ１０では、基板１０上に、導電層２５を形成することで、積層体１２０を得る。 "Conductive layer forming step S10"
In the conductive layer forming step S<b>10 , the laminate 120 is obtained by forming the conductive layer 25 on the substrate 10 .
　基板
　基板１０は、ポリイミド、ポリアミド、またはセルロースアセテートからなる。基板１０の厚さは、例えば、５μｍ～５０μｍである。基板１０の形状としては、例えば、フィルム状である。 Substrate The substrate 10 is made of polyimide, polyamide, or cellulose acetate. The thickness of the substrate 10 is, for example, 5 μm to 50 μm. The shape of the substrate 10 is, for example, a film shape.
　基板１０の１ＭＨｚのときの比誘電率は、３．０～５．０であることが好ましい。より好ましいポリイミドの１ＭＨｚのときの比誘電率は、３．０～４．０である。比誘電率は、ＪＩＳ　Ｃ　２１５１：２０１９に準拠して測定することができる。 The dielectric constant of the substrate 10 at 1 MHz is preferably 3.0 to 5.0. More preferable polyimide has a dielectric constant of 3.0 to 4.0 at 1 MHz. A dielectric constant can be measured according to JIS C 2151:2019.
　基板１０の１ＭＨｚのときの誘電正接（１ＭＨｚ）は、０．００１０～０．０３００であることが好ましい。より好ましい１ＭＨｚのときの誘電正接（１ＭＨｚ）は、０．００１３～０．０２００である。誘電正接は、ＪＩＳ　Ｃ　２１５１：２０１９に従って測定することができる。 The dielectric loss tangent (1 MHz) of the substrate 10 at 1 MHz is preferably 0.0010 to 0.0300. A more preferable dielectric loss tangent (1 MHz) at 1 MHz is 0.0013 to 0.0200. A dielectric loss tangent can be measured according to JIS C 2151:2019.
　導電層
　導電層２５の材質は、導電性を有する材質であれば特に限定されない。導電層２５の材質としては、Ａｕ、Ａｌ、Ｃｕ、またはＡｇなどの金属が挙げられる。導電層２５の材質としては、Ａｕが好ましい。 Conductive Layer The material of the conductive layer 25 is not particularly limited as long as it has conductivity. Materials for the conductive layer 25 include metals such as Au, Al, Cu, and Ag. Au is preferable as the material of the conductive layer 25 .
　導電層２５の厚さは、例えば、１０ｎｍ～２０００ｎｍである。導電層２５の厚さは、Ａｕなどの金属を用いる場合は、好ましくは、３０ｎｍ～６０ｎｍである。 The thickness of the conductive layer 25 is, for example, 10 nm to 2000 nm. The thickness of the conductive layer 25 is preferably 30 nm to 60 nm when using metal such as Au.
　導電層２５の形成方法は、特に限定されない。例えば、Ａｕなどの金属を真空蒸着することで導電層２５を形成してもよいし（金属導電層形成工程）、導電塗料を塗布することで、導電層２５を形成してもよい。 The method of forming the conductive layer 25 is not particularly limited. For example, the conductive layer 25 may be formed by vacuum-depositing a metal such as Au (metal conductive layer forming step), or by applying a conductive paint.
「導電体細線形成工程Ｓ２０」
　導電体細線形成工程Ｓ２０では、図５に示すように、基板１０上に設けられる導電層２５と、を備える積層体１２０に対し、レーザーを照射することで、導電層２５の一部を除去し、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線２０を形成する。
　導電体細線２０の延在方向と直交する幅方向の前記間隔ε１は例えば、２０μｍ～３００μｍである。導電体細線２０の延在方向と直交する幅方向の長さｄ１は、例えば、２０μｍ～３００μｍである。 "Conductor thin wire forming step S20"
In the fine conductor wire forming step S20, as shown in FIG. 5, a laminate 120 including a conductive layer 25 provided on a substrate 10 is irradiated with a laser to remove part of the conductive layer 25. , to form a plurality of straight thin conductor wires 20 arranged substantially parallel to each other at regular intervals.
The interval ε1 in the width direction orthogonal to the extending direction of the thin conductor wires 20 is, for example, 20 μm to 300 μm. The length d1 in the width direction perpendicular to the extending direction of the thin conductor wire 20 is, for example, 20 μm to 300 μm.
　図５は、テラヘルツ帯バンドパス偏光子の製造装置２００の一例である。テラヘルツ帯バンドパス偏光子の製造装置２００は、パルスレーザー３０、ビームエクスパンダー３１、２分の１波長板３２、偏光ビームスプリッター３３、ビームディフューザー３４、対物レンズ３５、およびＸＹＺステージ３６を備える。 FIG. 5 is an example of an apparatus 200 for manufacturing a terahertz-band bandpass polarizer. A terahertz-band bandpass polarizer manufacturing apparatus 200 includes a pulse laser 30 , a beam expander 31 , a half-wave plate 32 , a polarizing beam splitter 33 , a beam diffuser 34 , an objective lens 35 , and an XYZ stage 36 .
　パルスレーザー３０で生成されたレーザーは、ビームエクスパンダー３１に入射する。ビームエクスパンダ―３１によって、パルスレーザー３０から入射したレーザーのビーム径が調整される。ビーム径が調整されたレーザーは次に、２分の１波長板３２に入射する。２分の１波長板で、レーザーは、位相差λ／２（１８０°）を与えられる。位相差を与えられたレーザーは、偏光ビームスプリッター３３に入射する。偏光ビームスプリッター３３では、Ｓ偏光のレーザーを対物レンズ３５に向けて反射し、Ｐ偏光のレーザーをビームディフューザー３４に向けて透過する。偏光ビームスプリッター３３を透過したＰ偏光のレーザーはビームディフューザー３４で終端する。対物レンズ３５を通過したレーザーは、ＸＹＺステージ３６に設置された積層体１２０に照射される。レーザーが照射された部分の導電層２５は、除去される。 The laser generated by the pulse laser 30 enters the beam expander 31. The beam expander 31 adjusts the beam diameter of the laser incident from the pulse laser 30 . The laser whose beam diameter has been adjusted is then incident on the half-wave plate 32 . With a half-wave plate, the laser is given a phase difference of λ/2 (180°). The phase-shifted laser enters the polarizing beam splitter 33 . The polarizing beam splitter 33 reflects the S-polarized laser toward the objective lens 35 and transmits the P-polarized laser toward the beam diffuser 34 . The P-polarized laser that has passed through the polarization beam splitter 33 terminates at the beam diffuser 34 . The laser that has passed through the objective lens 35 is applied to the laminate 120 placed on the XYZ stage 36 . The portion of the conductive layer 25 irradiated with the laser is removed.
　ＸＹＺステージ３６には、積層体１２０が設置される。ＸＹＺステージ３６は、導電体細線２０の幅および間隔が設定された数値となるように、レーザー照射時にＸ方向およびＹ方向に積層体１２０を移動させる。これによって、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線２０を形成される。レーザーを用いることで、通常のフォトリソグラフィでは形成されない凸部２１を形成することができる。 A laminate 120 is installed on the XYZ stage 36 . The XYZ stage 36 moves the stacked body 120 in the X and Y directions during laser irradiation so that the width and spacing of the fine conductor wires 20 are set to the values set. As a result, a plurality of thin conductor wires 20 arranged substantially parallel to each other at regular intervals are formed. By using a laser, it is possible to form the projections 21 that cannot be formed by ordinary photolithography.
　以上、第１実施形態に係るテラヘルツ帯バンドパス偏光子の製造方法Ｓ１００を説明した。本実施形態では、導電層形成工程Ｓ１０を備えていたが、積層体１２０を別に用意できれば、導電層形成工程Ｓ１０を備えていなくてもよい。 The manufacturing method S100 of the terahertz-band bandpass polarizer according to the first embodiment has been described above. In this embodiment, the conductive layer forming step S10 is provided, but the conductive layer forming step S10 may not be provided if the laminate 120 can be separately prepared.
　本実施形態の製造方法では、レーザーを用いて導電体細線２０を形成したが、フォトリソグラフィを用いて導電体細線２０を形成してもよい。 In the manufacturing method of the present embodiment, the fine conductor wires 20 are formed using a laser, but the fine conductor wires 20 may be formed using photolithography.
　本実施形態では、凸部２１がある場合を説明したが、凸部２１は無くてもよい。 In the present embodiment, the case where the convex portion 21 is present has been described, but the convex portion 21 may be omitted.
（第２実施形態）
　次に、本発明に係る第２実施形態のテラヘルツ帯バンドパス偏光子１００Ａを、図６および図７を参照して説明する。
　なお、この第２実施形態においては、第１実施形態における構成要素と同一の部分については同一の符号を付し、その説明を省略し、異なる点についてのみ説明する。 (Second embodiment)
Next, a terahertz bandpass polarizer 100A of a second embodiment according to the present invention will be described with reference to FIGS. 6 and 7. FIG.
In the second embodiment, the same reference numerals are assigned to the same components as in the first embodiment, the description thereof is omitted, and only the different points will be described.
　図６は、本発明の一実施形態に係るテラヘルツ帯バンドパス偏光子１００Ａの平面図である。図７は、図６に示されたＢ－Ｂ線に沿う断面図である。図６および図７に示すように、第２実施形態に係るテラヘルツ帯バンドパス偏光子１００Ａは、基板１０と、基板１０上に設けられ、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線２０Ａとを備える。以下、各部について説明する。 FIG. 6 is a plan view of a terahertz bandpass polarizer 100A according to one embodiment of the present invention. FIG. 7 is a cross-sectional view taken along line BB shown in FIG. As shown in FIGS. 6 and 7, the terahertz-band bandpass polarizer 100A according to the second embodiment includes a substrate 10 and a plurality of straight lines provided on the substrate 10 and arranged substantially parallel to each other at regular intervals. and a conductive thin wire 20A. Each part will be described below.
　「導電体細線」
　導電体細線２０Ａは、基板１０上に設けられる。また、導電体細線２０Ａは、互いに一定の間隔で略平行に複数配置される。図６に示す通り、導電体細線２０Ａは、例えば、導電体細線２０Ａの延在方向（Ｙ方向）と直交する幅方向（Ｘ方向）に間隔ε２で離れて設けられる。間隔ε２の間隔を変えることで、透過するＳ偏光の周波数を制御することができる。間隔ε２は、２０μｍ～３００μｍである。各導電体細線２０Ａ間の間隔は略同一である。なお、導電体細線２０Ａの間隔ε２は、導電体細線２０Ａの幅方向の中心と隣接する導電体細線２０Ａの幅方向の中心との間の長さをいう。 "Conductor thin wire"
The thin conductor wires 20A are provided on the substrate 10 . In addition, a plurality of thin conductor wires 20A are arranged substantially parallel to each other at regular intervals. As shown in FIG. 6, the fine conductor wires 20A are provided, for example, at an interval ε2 in the width direction (X direction) orthogonal to the extending direction (Y direction) of the fine conductor wires 20A. By changing the interval ε2, the frequency of transmitted S-polarized light can be controlled. The interval ε2 is 20 μm to 300 μm. The intervals between the thin conductor wires 20A are substantially the same. The interval ε2 between the thin conductor wires 20A refers to the length between the center of the thin conductor wire 20A in the width direction and the center of the adjacent thin conductor wire 20A in the width direction.
　導電体細線２０Ａの形状は、直線状である。導電体細線２０Ａの幅方向の長さｄ２は２０μｍ～３００μｍであることが好ましい。導電体細線２０Ａの幅方向の長さｄ２を変えることで、透過するＳ偏光の周波数を制御することができる。 The shape of the thin conductor wire 20A is linear. The length d2 in the width direction of the thin conductor wire 20A is preferably 20 μm to 300 μm. By changing the length d2 in the width direction of the thin conductor wire 20A, the frequency of the transmitted S-polarized light can be controlled.
　導電体細線２０ＡのＺ方向の平均厚さは、例えば、３００ｎｍ～３０００ｎｍである。導電体細線２０ＡのＺ方向の平均厚さは、好ましくは、６００ｎｍ～２０００ｎｍである。カーボンナノチューブを用いる場合は、好ましくは、６００ｎｍ～１０００ｎｍである。 The average thickness in the Z direction of the thin conductor wires 20A is, for example, 300 nm to 3000 nm. The average thickness in the Z direction of the thin conductor wires 20A is preferably 600 nm to 2000 nm. When using carbon nanotubes, it is preferably 600 nm to 1000 nm.
　導電体細線２０Ａの延在方向（Ｙ方向）の長さは、例えば、０．５ｍｍ～２０ｍｍである。 The length of the thin conductor wire 20A in the extending direction (Y direction) is, for example, 0.5 mm to 20 mm.
　基板１０の板厚方向に平行であり、導電体細線２０Ａの幅方向に平行な断面において、導電体細線２０Ａは、幅方向の端部に凸部２１Ａを有していても良い。凸部２１Ａの高さｈ２は、例えば、導電体細線２０の厚さが１０００ｎｍであれば、５００ｎｍ～５０００μｍである。凸部２１Ａは、導電体細線２０Ａの幅方向の両端にあることが好ましい。 In a cross section parallel to the thickness direction of the substrate 10 and parallel to the width direction of the thin conductor wire 20A, the thin conductor wire 20A may have a protrusion 21A at the end in the width direction. The height h2 of the convex portion 21A is, for example, 500 nm to 5000 μm if the thin conductor wire 20 has a thickness of 1000 nm. It is preferable that the convex portions 21A are present at both ends in the width direction of the thin conductor wire 20A.
　第２実施形態の導電体細線２０Ａの材質は、導電性を有し、かつ、テラヘルツ帯の電磁波を吸収可能であり、かつ、電磁波を吸収して発生した熱から電気信号を発生可能な材料（電磁波吸収熱電材料）であれば特に限定されない。当該材料がテラヘルツ帯の電磁波を熱として吸収し、発生した熱勾配を電気信号へと変換することで、テラヘルツ帯の電磁波を検知することができる。導電体細線２０Ａの材質としては、例えば、カーボンナノチューブである。カーボンナノチューブを用いた場合、Ｐ偏光をカーボンナノチューブが吸収し、温度勾配が発生する。その温度差が電圧に変換されることで（光熱起電力効果）、テラヘルツ帯の電磁波を検出することができる。 The material of the conductor thin wire 20A of the second embodiment is a material that has conductivity, can absorb electromagnetic waves in the terahertz band, and can generate an electric signal from the heat generated by absorbing the electromagnetic waves ( It is not particularly limited as long as it is an electromagnetic wave absorbing thermoelectric material). The material absorbs electromagnetic waves in the terahertz band as heat and converts the generated thermal gradient into an electrical signal, so that the electromagnetic waves in the terahertz band can be detected. The material of the thin conductor wire 20A is, for example, a carbon nanotube. When carbon nanotubes are used, the carbon nanotubes absorb the P-polarized light and generate a temperature gradient. By converting the temperature difference into voltage (photothermoelectromotive force effect), electromagnetic waves in the terahertz band can be detected.
　導電体細線２０Ａに用いるカーボンナノチューブとしては、多層カーボンナノチューブまたは単層カーボンナノチューブが挙げられる。カーボンナノチューブとしては、単層カーボンナノチューブが好ましい。 Carbon nanotubes used for the thin conductor wires 20A include multi-walled carbon nanotubes and single-walled carbon nanotubes. Single-walled carbon nanotubes are preferred as the carbon nanotubes.
　電気的性質（カイラリティ）の観点では、導電体細線２０Ａに用いるカーボンナノチューブとして、金属型カーボンナノチューブ、半導体型カーボンナノチューブを用いることができる。カーボンナノチューブとしては、半導体型カーボンナノチューブが好ましい。 From the viewpoint of electrical properties (chirality), metallic carbon nanotubes and semiconducting carbon nanotubes can be used as the carbon nanotubes used for the thin conductor wires 20A. A semiconducting carbon nanotube is preferable as the carbon nanotube.
　導電体細線２０Ａ中のカーボンナノチューブの含有量は５０質量％以上であることが好ましい。より好ましくはカーボンナノチューブの含有量は８０質量％以上である。さらに好ましくは、カーボンナノチューブの含有量は９０質量％以上である。導電体細線２０Ａ中のカーボンナノチューブの含有量が高いほど好ましい。そのため、カーボンナノチューブの含有量の上限は１００質量％である。 The content of carbon nanotubes in the fine conductor wires 20A is preferably 50% by mass or more. More preferably, the content of carbon nanotubes is 80% by mass or more. More preferably, the content of carbon nanotubes is 90% by mass or more. The higher the content of carbon nanotubes in the fine conductor wires 20A, the better. Therefore, the upper limit of the carbon nanotube content is 100% by mass.
　以上、第２実施形態に係るテラヘルツ帯バンドパス偏光子１００Ａについて説明した。第２実施形態に係るテラヘルツ帯バンドパス偏光子１００Ａは、導電体細線２０Ａの間隔ε２等によって定まる共振点付近で、Ｓ偏光のみを透過し、Ｐ偏光を遮断する。即ち、テラヘルツ帯バンドパス偏光子１００Ａは、偏光機能およびバンドパス機能を兼ね備える。また、第２実施形態に係るテラヘルツ帯バンドパス偏光子１００Ａは、導電体細線２０Ａがテラヘルツ帯の電磁波を吸収可能な電磁波吸収熱電材料からなる。そのため、テラヘルツ帯バンドパス偏光子１００Ａは、さらにテラヘルツ帯の電磁波を検知することができる。 The terahertz-band bandpass polarizer 100A according to the second embodiment has been described above. The terahertz-band bandpass polarizer 100A according to the second embodiment transmits only S-polarized light and blocks P-polarized light in the vicinity of the resonance point determined by the spacing ε2 of the thin conductor wires 20A. That is, the terahertz-band bandpass polarizer 100A has both a polarizing function and a bandpass function. In the terahertz-band bandpass polarizer 100A according to the second embodiment, the thin conductor wires 20A are made of an electromagnetic wave absorbing thermoelectric material capable of absorbing terahertz-band electromagnetic waves. Therefore, the terahertz band-pass polarizer 100A can further detect electromagnetic waves in the terahertz band.
　次に、テラヘルツ帯バンドパス偏光子１００Ａの製造方法について、図８および図９を用いて説明する。図８は、第１実施形態に係るテラヘルツ帯バンドパス偏光子の製造方法のフローチャートである。図９は、レーザーを照射する積層体１２０Ａの断面模式図である。テラヘルツ帯バンドパス偏光子の製造方法は、ポリイミド、ポリアミド、またはセルロースアセテートからなる基板１０上に、導電層２５Ａを形成することで、図９に示す積層体１２０Ａを得る電磁波吸収熱電材料層形成工程Ｓ１０Ａと、基板１０上に設けられる導電層２５Ａと、を備える積層体１２０Ａに対し、レーザーを照射することで、導電層２５Ａの一部を除去し、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線を形成する、導電体細線形成工程Ｓ２０と、を備える。 Next, a method for manufacturing the terahertz-band bandpass polarizer 100A will be described with reference to FIGS. 8 and 9. FIG. FIG. 8 is a flow chart of a method for manufacturing a terahertz bandpass polarizer according to the first embodiment. FIG. 9 is a schematic cross-sectional view of a laminate 120A irradiated with laser. The manufacturing method of the terahertz band-pass polarizer is an electromagnetic wave absorbing thermoelectric material layer forming step of obtaining the laminate 120A shown in FIG. 9 by forming the conductive layer 25A on the substrate 10 made of polyimide, polyamide or cellulose acetate. By irradiating a laminate 120A including S10A and a conductive layer 25A provided on the substrate 10 with a laser, a part of the conductive layer 25A is removed, and the conductive layers 25A are arranged substantially parallel to each other at regular intervals. and a conductor thin wire forming step S20 for forming a plurality of straight conductor thin wires.
「電磁波吸収熱電材料層形成工程Ｓ１０Ａ」
　電磁波吸収熱電材料層形成工程Ｓ１０Ａでは、基板１０上に、導電層２５Ａを形成することで、積層体１２０Ａを得る。第２実施形態の導電層２５Ａは、電磁波吸収熱電材料からなる層である。 "Electromagnetic wave absorbing thermoelectric material layer forming step S10A"
In the electromagnetic wave absorbing thermoelectric material layer forming step S10A, the laminate 120A is obtained by forming the conductive layer 25A on the substrate 10 . The conductive layer 25A of the second embodiment is a layer made of an electromagnetic wave absorbing thermoelectric material.
　基板
　基板１０は、ポリイミド、ポリアミド、またはセルロースアセテートからなる。基板１０の厚さは、例えば、５μｍ～５０μｍである。基板１０の形状としては、例えば、フィルム状である。 Substrate The substrate 10 is made of polyimide, polyamide, or cellulose acetate. The thickness of the substrate 10 is, for example, 5 μm to 50 μm. The shape of the substrate 10 is, for example, a film shape.
　導電層
　第２実施形態の導電層２５Ａの材質は、導電性を有し、かつ、テラヘルツ帯の電磁波を吸収可能であり、かつ、電磁波を吸収して発生した熱から電気信号を発生可能な材料（電磁波吸収熱電材料）であれば特に限定されない。当該材料がテラヘルツ帯の電磁波を熱として吸収し、発生した熱勾配を電気信号へと変換することで、テラヘルツ帯の電磁波を検知することができる。導電体細線２０Ａの材質としては、例えば、カーボンナノチューブである。カーボンナノチューブを用いた場合、Ｐ偏光をカーボンナノチューブが吸収し、温度勾配が発生する。その温度差が電圧に変換されることで（光熱起電力効果）、テラヘルツ帯の電磁波を検出することができる。 Conductive Layer The material of the conductive layer 25A of the second embodiment is a material that has conductivity, is capable of absorbing electromagnetic waves in the terahertz band, and is capable of generating an electrical signal from heat generated by absorbing the electromagnetic waves. (Electromagnetic wave absorption thermoelectric material) is not particularly limited. The material absorbs electromagnetic waves in the terahertz band as heat and converts the generated thermal gradient into an electrical signal, so that the electromagnetic waves in the terahertz band can be detected. The material of the thin conductor wire 20A is, for example, a carbon nanotube. When carbon nanotubes are used, the carbon nanotubes absorb the P-polarized light and generate a temperature gradient. By converting the temperature difference into voltage (photothermoelectromotive force effect), electromagnetic waves in the terahertz band can be detected.
　導電層２５Ａに用いるカーボンナノチューブとしては、多層カーボンナノチューブまたは単層カーボンナノチューブが挙げられる。カーボンナノチューブとしては、単層カーボンナノチューブが好ましい。 Carbon nanotubes used for the conductive layer 25A include multi-walled carbon nanotubes and single-walled carbon nanotubes. Single-walled carbon nanotubes are preferred as the carbon nanotubes.
　電気的性質（カイラリティ）の観点では、導電層２５Ａに用いるカーボンナノチューブとして、金属型カーボンナノチューブ、半導体型カーボンナノチューブを用いることができる。カーボンナノチューブとしては、半導体型カーボンナノチューブが好ましい。 From the viewpoint of electrical properties (chirality), metallic carbon nanotubes and semiconducting carbon nanotubes can be used as the carbon nanotubes used for the conductive layer 25A. A semiconducting carbon nanotube is preferable as the carbon nanotube.
　導電層２５Ａ中のカーボンナノチューブの含有量は５０質量％以上であることが好ましい。より好ましくはカーボンナノチューブの含有量は８０質量％以上である。さらに好ましくは、カーボンナノチューブの含有量は９０質量％以上である。導電層２５Ａ中のカーボンナノチューブの含有量が高いほど好ましい。そのため、カーボンナノチューブの含有量の上限は１００質量％である。 The content of carbon nanotubes in the conductive layer 25A is preferably 50% by mass or more. More preferably, the content of carbon nanotubes is 80% by mass or more. More preferably, the content of carbon nanotubes is 90% by mass or more. The higher the content of carbon nanotubes in the conductive layer 25A, the better. Therefore, the upper limit of the carbon nanotube content is 100% by mass.
　導電層２５Ａの厚さは、例えば、３００ｎｍ～３０００ｎｍである。導電層２５ＡのＺ方向の平均厚さは、好ましくは、６００ｎｍ～２０００ｎｍである。 The thickness of the conductive layer 25A is, for example, 300 nm to 3000 nm. The average thickness of the conductive layer 25A in the Z direction is preferably 600 nm to 2000 nm.
　導電層２５Ａの形成方法は、特に限定されない。例えば、カーボンナノチューブなどの電磁波吸収熱電材料が分散した分散液を濾過することで、電磁波吸収熱電材料フィルム（例えば、カーボンナノチューブフィルム）を作製し、作製した電磁波吸収熱電材料フィルムを基板１０に転写することで導電層２５Ａを形成してもよい。また、カーボンナノチューブなどの電磁波吸収熱電材料が分散した分散液を基板１０に塗布することで、導電層２５Ａを形成してもよい。 The method of forming the conductive layer 25A is not particularly limited. For example, an electromagnetic wave absorbing thermoelectric material film (for example, a carbon nanotube film) is produced by filtering a dispersion liquid in which an electromagnetic wave absorbing thermoelectric material such as carbon nanotubes is dispersed, and the produced electromagnetic wave absorbing thermoelectric material film is transferred to the substrate 10. Thus, the conductive layer 25A may be formed. Alternatively, the conductive layer 25A may be formed by coating the substrate 10 with a dispersion liquid in which an electromagnetic wave absorbing thermoelectric material such as carbon nanotubes is dispersed.
「導電体細線形成工程Ｓ２０」
　導電体細線形成工程Ｓ２０では、第１実施形態と同様の方法で、積層体１２０Ａに対し、レーザーを照射することで、導電層２５Ａの一部を除去し、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線２０Ａを形成する。 "Conductor thin wire forming step S20"
In the fine conductor wire forming step S20, the laminated body 120A is irradiated with a laser in the same manner as in the first embodiment, thereby removing part of the conductive layer 25A and arranging them substantially parallel to each other at regular intervals. to form a plurality of straight thin conductor wires 20A.
　以上、第２実施形態に係るテラヘルツ帯バンドパス偏光子の製造方法Ｓ１００Ａを説明した。本実施形態では、電磁波吸収熱電材料層形成工程Ｓ１０Ａを備えていたが、積層体１２０Ａを別に用意できれば、電磁波吸収熱電材料層形成工程Ｓ１０Ａを備えていなくてもよい。 The manufacturing method S100A of the terahertz-band bandpass polarizer according to the second embodiment has been described above. Although the present embodiment includes the electromagnetic wave absorbing thermoelectric material layer forming step S10A, the electromagnetic wave absorbing thermoelectric material layer forming step S10A may not be provided if the laminate 120A can be prepared separately.
　本実施形態では、凸部２１Ａがある場合を説明したが、凸部２１Ａは無くてもよい。 In the present embodiment, the case where the convex portion 21A is present has been described, but the convex portion 21A may be omitted.
　なお、本発明の技術的範囲は前記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。その他、本発明の趣旨に逸脱しない範囲で、前記実施形態における構成要素を周知の構成要素に置き換えることは適宜可能である。 It should be noted that the technical scope of the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the present invention. In addition, it is possible to appropriately replace the constituent elements in the above-described embodiments with well-known constituent elements without departing from the gist of the present invention.
　次に、本発明の実施例について説明するが、実施例での条件は、本発明の実施可能性及び効果を確認するために採用した一条件例であり、本発明は、この一条件例に限定されるものではない。本発明は、本発明の要旨を逸脱せず、本発明の目的を達成する限りにおいて、種々の条件を採用し得るものである。 Next, examples of the present invention will be described. The conditions in the examples are one example of conditions adopted for confirming the feasibility and effect of the present invention, and the present invention is based on this one example of conditions. It is not limited. Various conditions can be adopted in the present invention as long as the objects of the present invention are achieved without departing from the gist of the present invention.
　（金属積層体の作製）
　基板としてカプトン（登録商標）５０ＥＮ（厚さ１２．５μｍ、比誘電率　３．２（１ＭＨｚ）、誘電正接０．００７０（１ＭＨｚ））、ユニアミド（登録商標）ＥＸ（厚さ２５μｍ）、またはセルロースアセテートメンブレン（厚さ１２５μｍ）を用いた。真空蒸着法を用いて基板上にＡｕ膜を５０ｎｍの膜厚で形成し金属積層体を得た。 (Preparation of metal laminate)
Kapton (registered trademark) 50EN (thickness 12.5 μm, dielectric constant 3.2 (1 MHz), dielectric loss tangent 0.0070 (1 MHz)), Uniamide (registered trademark) EX (thickness 25 μm), or cellulose acetate as a substrate A membrane (125 μm thick) was used. A metal laminate was obtained by forming an Au film with a film thickness of 50 nm on a substrate using a vacuum deposition method.
　（ＣＮＴ積層体の作製）
　基板としてカプトン（登録商標）５０ＥＮを用いた。メンブレンでカーボンナノチューブ分散液を濾過し、カーボンナノチューブフィルムを得た（膜厚１μｍ）。得られたカーボンナノチューブフィルムを基板に転写し、ＣＮＴ積層体を得た。 (Production of CNT laminate)
Kapton (registered trademark) 50EN was used as the substrate. The carbon nanotube dispersion was filtered through a membrane to obtain a carbon nanotube film (thickness: 1 μm). The obtained carbon nanotube film was transferred to a substrate to obtain a CNT laminate.
　（実施例１）
　導電体細線の形成には、図５に示すテラヘルツ帯バンドパス偏光子の製造装置（対物レンズ：１０倍）を用いた。カプトン基板上の金属積層体のＡｕ膜に対し、パルスレーザー（波長５３２ｎｍ）を照射しながら、導電体細線間隔２００μｍ、導電体細線の幅２００μｍとなるようにＸＹＺステージを動かし、実施例１のテラヘルツ帯バンドパス偏光子を得た。なお、レーザー照射条件は以下の条件で行った。
　Ｐｕｌｓｅ　ｗｉｄｔｈ：　３　ｎｓ
　Ｐｕｌｓｅ　ｅｎｅｒｇｙ：　５０　ｎＪ
　Ｒｅｐｅｔｉｔｉｏｎ　ｒａｔｅ：　１　ｋＨｚ
　Ｂｅａｍ　ｄｉａｍｅｔｅｒ：　ｆ２　ｍｍ
　Ｏｖｅｒｌａｐ　ｒａｔｉｏ：　１５％ (Example 1)
A terahertz-band bandpass polarizer manufacturing apparatus (objective lens: 10×) shown in FIG. 5 was used to form the thin conductor wires. While irradiating the Au film of the metal laminate on the Kapton substrate with a pulse laser (wavelength 532 nm), the XYZ stage was moved so that the conductor fine line spacing was 200 μm and the conductor fine line width was 200 μm. A zonal bandpass polarizer was obtained. In addition, the laser irradiation conditions were performed under the following conditions.
Pulse width: 3ns
Pulse energy: 50nJ
Repetition rate: 1kHz
Beam diameter: f2mm
Overlap ratio: 15%
　（実施例２）
　カプトン基板上の金属積層体のＡｕ膜に対し、実施例１と同様の条件でレーザーを照射しながら、導電体細線間隔１００μｍ、導電体細線の幅１００μｍとなるようにＸＹＺステージを動かし、実施例２のテラヘルツ帯バンドパス偏光子を得た。 (Example 2)
While irradiating the Au film of the metal laminate on the Kapton substrate with a laser under the same conditions as in Example 1, the XYZ stage was moved so that the conductor fine line spacing was 100 μm and the conductor fine line width was 100 μm. No. 2 terahertz bandpass polarizer was obtained.
　（実施例３）
　カプトン基板上の金属積層体のＡｕ膜に対し、実施例１と同様の条件でレーザーを照射しながら、導電体細線間隔６０μｍ、導電体細線の幅６０μｍとなるようにＸＹＺステージを動かし、実施例３のテラヘルツ帯バンドパス偏光子を得た。 (Example 3)
While irradiating the Au film of the metal laminate on the Kapton substrate with a laser under the same conditions as in Example 1, the XYZ stage was moved so that the conductor fine line spacing was 60 μm and the conductor fine line width was 60 μm. No. 3 terahertz bandpass polarizer was obtained.
　（実施例４）
　カプトン基板上の金属積層体のＡｕ膜に対し、実施例１と同様の条件でレーザーを照射しながら、導電体細線間隔４０μｍ、導電体細線の幅４０μｍとなるようにＸＹＺステージを動かし、実施例４のテラヘルツ帯バンドパス偏光子を得た。 (Example 4)
While irradiating the Au film of the metal laminate on the Kapton substrate with a laser under the same conditions as in Example 1, the XYZ stage was moved so that the conductor fine line spacing was 40 μm and the conductor fine line width was 40 μm. No. 4 terahertz bandpass polarizer was obtained.
　（実施例５）
　ユニアミド基板上の金属積層体のＡｕ膜に対し、導電体細線間隔２００μｍ、導電体細線の幅２００μｍとなるシャドーマスクを使用した真空蒸着法により、実施例５のテラヘルツ帯バンドパス偏光子を得た。 (Example 5)
A terahertz bandpass polarizer of Example 5 was obtained by vacuum deposition using a shadow mask with a conductor fine line spacing of 200 μm and a conductor fine line width of 200 μm for the Au film of the metal laminate on the uniamide substrate. .
　（実施例６）
　セルロースアセテートメンブレン基板上の金属積層体のＡｕ膜に対し、導電体細線間隔１００μｍ、導電体細線の幅１００μｍとなるシャドーマスクを使用した真空蒸着法により、実施例６のテラヘルツ帯バンドパス偏光子を得た。 (Example 6)
The terahertz bandpass polarizer of Example 6 was applied to the Au film of the metal laminate on the cellulose acetate membrane substrate by a vacuum deposition method using a shadow mask having a fine conductor line spacing of 100 μm and a conductor fine line width of 100 μm. Obtained.
　（実施例７）
　ＣＮＴ積層体に対し、実施例１と同様の条件でレーザーを照射し、導電体細線間隔２００μｍ、導電体細線の幅２００μｍとなるようにＸＹＺステージを動かし、実施例７のテラヘルツ帯バンドパス偏光子を得た。 (Example 7)
The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 200 μm and the conductor fine line width was 200 μm. got
　（実施例８）
　ＣＮＴ積層体に対し、実施例１と同様の条件でレーザーを照射し、導電体細線間隔１００μｍ、導電体細線の幅１００μｍとなるようにＸＹＺステージを動かし、実施例８のテラヘルツ帯バンドパス偏光子を得た。 (Example 8)
The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 100 μm and the conductor fine line width was 100 μm. got
　（実施例９）
　ＣＮＴ積層体に対し、実施例１と同様の条件でレーザーを照射し、導電体細線間隔６０μｍ、導電体細線の幅６０μｍとなるようにＸＹＺステージを動かし、実施例９のテラヘルツ帯バンドパス偏光子を得た。 (Example 9)
The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 60 μm and the conductor fine line width was 60 μm. got
　（実施例１０）
　ＣＮＴ積層体に対し、実施例１と同様の条件でレーザーを照射し、導電体細線間隔４０μｍ、導電体細線の幅４０μｍとなるようにＸＹＺステージを動かし、実施例１０のテラヘルツ帯バンドパス偏光子を得た。 (Example 10)
The CNT laminate was irradiated with a laser under the same conditions as in Example 1, and the XYZ stage was moved so that the conductor fine line spacing was 40 μm and the conductor fine line width was 40 μm. got
　（透過スペクトル測定）
　各実施例のＳ偏光およびＰ偏光の透過スペクトルを測定した。測定には、アドバンテスト社製ＴＡＳ７５００シリーズを用いた。測定は以下の条件で行った。
周波数レンジ：０．５ＴＨｚ～４．５ＴＨｚ
周波数分解能：３．８　ＧＨｚ
積算回数：１０２８回
測定系：透過型
雰囲気：乾燥空気パージ (Transmission spectrum measurement)
The transmission spectra of S-polarized light and P-polarized light of each example were measured. TAS7500 series manufactured by Advantest was used for the measurement. Measurement was performed under the following conditions.
Frequency range: 0.5THz to 4.5THz
Frequency resolution: 3.8 GHz
Cumulative number of times: 1028 times Measurement system: transmission type Atmosphere: dry air purge
　（高さプロファイル測定）
　実施例４の高さプロファイルを測定した。測定には、キーエンス社製ＶＫ－Ｘ１０００シリーズを用いた。測定条件は対物レンズ１００倍とした。 (height profile measurement)
The height profile of Example 4 was measured. VK-X1000 series manufactured by Keyence Corporation was used for the measurement. Measurement conditions were an objective lens of 100 times.
　実施例１のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１０に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例１のテラヘルツ帯バンドパス偏光子は、共振点０．７ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 1 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 1 transmits S-polarized light and blocks P-polarized light near the resonance point of 0.7 THz.
　実施例２のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１１に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例２のテラヘルツ帯バンドパス偏光子は、共振点１．３ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 2 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 2 transmits S-polarized light and blocks P-polarized light near the resonance point of 1.3 THz.
　実施例３のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１２に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例３のテラヘルツ帯バンドパス偏光子は、共振点２ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 3 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 3 transmits S-polarized light and blocks P-polarized light near the resonance point of 2 THz.
　実施例４のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１３に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例４のテラヘルツ帯バンドパス偏光子は、共振点２．６ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 4 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 4 transmits S-polarized light and blocks P-polarized light near the resonance point of 2.6 THz.
　実施例５のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１４に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例１のテラヘルツ帯バンドパス偏光子は、共振点０．７ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 5 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 1 transmits S-polarized light and blocks P-polarized light near the resonance point of 0.7 THz.
　実施例６のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１５に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例１のテラヘルツ帯バンドパス偏光子は、共振点１．３ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 6 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 1 transmits S-polarized light and blocks P-polarized light near the resonance point of 1.3 THz.
　図１０～図１５に示されたように、実施例１～６のテラヘルツ帯バンドパス偏光子は、特定の周波数付近でＳ偏光を透過し、Ｐ偏光を遮断できることが確認された。また、導電体細線の間隔を小さくすることで、透過する周波数を高周波数側にシフトできることが確認された。 As shown in FIGS. 10 to 15, it was confirmed that the terahertz bandpass polarizers of Examples 1 to 6 can transmit S-polarized light and block P-polarized light in the vicinity of specific frequencies. Moreover, it was confirmed that the transmission frequency can be shifted to the high frequency side by reducing the distance between the conductor thin wires.
　実施例７のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１６に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例７のテラヘルツ帯バンドパス偏光子は、共振点０．７ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 7 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 7 transmits S-polarized light and blocks P-polarized light near the resonance point of 0.7 THz.
　実施例８のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１７に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例８のテラヘルツ帯バンドパス偏光子は、共振点１．３ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 8 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 8 transmits S-polarized light and blocks P-polarized light near the resonance point of 1.3 THz.
　実施例９のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１８に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例９のテラヘルツ帯バンドパス偏光子は、共振点２ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 9 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 9 transmits S-polarized light and blocks P-polarized light near the resonance point of 2 THz.
　実施例１０のテラヘルツ帯バンドパス偏光子の透過スペクトルを図１９に示す。縦軸は透過率を示し、横軸は周波数（ＴＨｚ）を示す。実施例１０のテラヘルツ帯バンドパス偏光子は、共振点３ＴＨｚ付近でＳ偏光が透過し、Ｐ偏光が遮断していることが確認された。 The transmission spectrum of the terahertz-band bandpass polarizer of Example 10 is shown in FIG. The vertical axis indicates transmittance, and the horizontal axis indicates frequency (THz). It was confirmed that the terahertz-band bandpass polarizer of Example 10 transmits S-polarized light and blocks P-polarized light near the resonance point of 3 THz.
　図１６～図１９から示されるように、実施例７～１０のテラヘルツ帯バンドパス偏光子は、特定の周波数付近でＳ偏光を透過し、Ｐ偏光を遮断できることが確認された。また、導電体細線の間隔を小さくすることで、透過する周波数を高周波数側にシフトできることが確認された。なお、実施例７～１０のテラヘルツ帯バンドパス偏光子は、実施例１～６のテラヘルツ帯バンドパス偏光子よりも透過率が低かった。これは、カーボンナノチューブのプラズモン共鳴によるものだと考えられる。 As shown in FIGS. 16 to 19, it was confirmed that the terahertz bandpass polarizers of Examples 7 to 10 can transmit S-polarized light and block P-polarized light in the vicinity of specific frequencies. Moreover, it was confirmed that the transmission frequency can be shifted to the high frequency side by reducing the distance between the conductor thin wires. The terahertz band-pass polarizers of Examples 7-10 had lower transmittances than the terahertz-band band-pass polarizers of Examples 1-6. This is believed to be due to plasmon resonance of carbon nanotubes.
　図２０に実施例４の高さプロファイルを示す。縦軸は高さ（ｎｍ）を示し、横軸はＸ方向の変位（μｍ）を示す。実施例４のテラヘルツ帯バンドパス偏光子は、幅方向の両端に凸部（バリ）を有することが確認された。図２０の場合では、４０ｎｍ以上の凸部が確認できた。 The height profile of Example 4 is shown in FIG. The vertical axis indicates height (nm), and the horizontal axis indicates displacement (μm) in the X direction. It was confirmed that the terahertz bandpass polarizer of Example 4 had protrusions (burrs) at both ends in the width direction. In the case of FIG. 20, convex portions of 40 nm or more were confirmed.
　本開示のテラヘルツ帯バンドパス偏光子は、偏光機能およびバンドパス機能を兼ね備えるため、光学素子の数を低減できる。そのため、本開示のテラヘルツ帯バンドパス偏光子は、産業上の利用可能性が高い。 The terahertz-band bandpass polarizer of the present disclosure has both a polarization function and a bandpass function, so the number of optical elements can be reduced. Therefore, the terahertz bandpass polarizer of the present disclosure has high industrial applicability.
　１０　基板、２０　導電体細線、１００　テラヘルツ帯バンドパス偏光子 10 Substrate, 20 Conductive thin wire, 100 Terahertz band-pass polarizer

Claims (23)

  1. 　ポリイミド、ポリアミド、またはセルロースアセテートからなる基板と、
    　前記基板上に設けられ、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線と、
    を備え、
    　前記導電体細線の延在方向と直交する幅方向の前記間隔が２０μｍ～３００μｍである、テラヘルツ帯バンドパス偏光子。     a substrate made of polyimide, polyamide, or cellulose acetate;
    a plurality of linear thin conductor wires provided on the substrate and arranged substantially parallel to each other at regular intervals;
    with
    A terahertz-band bandpass polarizer, wherein the spacing in the width direction orthogonal to the extending direction of the conductor thin wires is 20 μm to 300 μm.
  2. 　前記基板の厚さが５μｍ～５０μｍである、請求項１に記載のテラヘルツ帯バンドパス偏光子。 The terahertz bandpass polarizer according to claim 1, wherein the substrate has a thickness of 5 μm to 50 μm.
  3. 　前記基板の比誘電率が３．０～５．０である、請求項１または２に記載のテラヘルツ帯バンドパス偏光子。 The terahertz bandpass polarizer according to claim 1 or 2, wherein the substrate has a dielectric constant of 3.0 to 5.0.
  4. 　前記基板の誘電正接は、０．００１０～０．０３００である、請求項１～３のいずれか１項に記載のテラヘルツ帯バンドパス偏光子。 The terahertz-band bandpass polarizer according to any one of claims 1 to 3, wherein the substrate has a dielectric loss tangent of 0.0010 to 0.0300.
  5. 　前記導電体細線の前記幅方向の長さが２０μｍ～３００μｍである、請求項１～４のいずれか１項に記載のテラヘルツ帯バンドパス偏光子。 The terahertz-band bandpass polarizer according to any one of claims 1 to 4, wherein the length of the conductor fine wire in the width direction is 20 µm to 300 µm.
  6. 　前記導電体細線が金属からなる、請求項１～５のいずれか１項に記載のテラヘルツ帯バンドパス偏光子。 The terahertz-band bandpass polarizer according to any one of claims 1 to 5, wherein the fine conductor wires are made of metal.
  7. 　前記金属が、Ａｕ、Ａｌ、Ｃｕ、またはＡｇである、請求項６に記載のテラヘルツ帯バンドパス偏光子。 The terahertz bandpass polarizer according to claim 6, wherein the metal is Au, Al, Cu, or Ag.
  8. 　前記導電体細線がテラヘルツ帯の電磁波を吸収可能であり、かつ、前記電磁波を吸収して発生した熱から電気信号を発生可能な電磁波吸収熱電材料からなる、請求項１～５のいずれか１項に記載のテラヘルツ帯バンドパス偏光子。 6. The conductor thin wire is made of an electromagnetic wave absorbing thermoelectric material capable of absorbing electromagnetic waves in the terahertz band and generating an electric signal from the heat generated by absorbing the electromagnetic waves. The terahertz-band bandpass polarizer according to .
  9. 　前記電磁波吸収熱電材料が、カーボンナノチューブである請求項８に記載のテラヘルツ帯バンドパス偏光子。 The terahertz bandpass polarizer according to claim 8, wherein the electromagnetic wave absorbing thermoelectric material is a carbon nanotube.
  10. 　前記基板の板厚方向に平行であり、前記導電体細線の前記幅方向に平行な断面において、
    　前記導電体細線の幅方向の端部に凸部を有する、請求項１～９のいずれか１項に記載のテラヘルツ帯バンドパス偏光子。     In a cross section parallel to the thickness direction of the substrate and parallel to the width direction of the conductor fine wire,
    The terahertz-band bandpass polarizer according to any one of claims 1 to 9, wherein the conductor thin wire has a convex portion at an end portion in the width direction.
  11. 　前記凸部の高さが、２０ｎｍ～２μｍである、請求項１０に記載のテラヘルツ帯バンドパス偏光子。 The terahertz bandpass polarizer according to claim 10, wherein the height of the convex portion is 20 nm to 2 µm.
  12. 　ポリイミド、ポリアミド、またはセルロースアセテートからなる基板と、
    　前記基板上に設けられる導電層と、
    を備える積層体に対し、レーザーを照射することで、
    　前記導電層の一部を除去し、互いに一定の間隔で略平行に配置された複数の直線状の導電体細線を形成する、導電体細線形成工程を備える、テラヘルツ帯バンドパス偏光子の製造方法。     a substrate made of polyimide, polyamide, or cellulose acetate;
    a conductive layer provided on the substrate;
    By irradiating the laminate with a laser,
    A method for producing a terahertz band bandpass polarizer, comprising a step of forming a plurality of thin conductor wires arranged substantially parallel to each other at regular intervals by removing part of the conductive layer. .
  13. 　前記基板の厚さが５μｍ～５０μｍである、請求項１２に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to claim 12, wherein the substrate has a thickness of 5 µm to 50 µm.
  14. 　前記基板の比誘電率が３．０～５．０である、請求項１２または１３に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to claim 12 or 13, wherein the substrate has a dielectric constant of 3.0 to 5.0.
  15. 　前記基板の誘電正接は、０．００１０～０．０３００である、請求項１２～１４のいずれか１項に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to any one of claims 12 to 14, wherein the substrate has a dielectric loss tangent of 0.0010 to 0.0300.
  16. 　前記導電体細線の延在方向と直交する幅方向の前記間隔が２０μｍ～３００μｍである、請求項１２～１５のいずれか１項に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to any one of claims 12 to 15, wherein the spacing in the width direction orthogonal to the extending direction of the conductor thin wires is 20 µm to 300 µm.
  17. 　前記導電体細線の延在方向と直交する幅方向の長さが２０μｍ～３００μｍである、請求項１２～１６のいずれか１項に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to any one of claims 12 to 16, wherein the length of the width direction perpendicular to the extending direction of the conductor thin wire is 20 µm to 300 µm.
  18. 　前記導電層が金属からなる、請求項１２～１７のいずれか１項に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to any one of claims 12 to 17, wherein the conductive layer is made of metal.
  19. 　前記金属が、Ａｕ、Ａｌ、Ｃｕ、またはＡｇである、請求項１８に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to claim 18, wherein the metal is Au, Al, Cu, or Ag.
  20. 　前記基板上に蒸着によって導電層を形成する金属導電層形成工程を、更に備える、請求項１８または１９に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz band-pass polarizer according to claim 18 or 19, further comprising a metal conductive layer forming step of forming a conductive layer on the substrate by vapor deposition.
  21. 　前記導電層がテラヘルツ帯の電磁波を吸収可能であり、かつ、前記電磁波を吸収して発生した熱から電気信号を発生可能な電磁波吸収熱電材料からなる、請求項１２～１７のいずれか１項に記載のテラヘルツ帯バンドパス偏光子の製造方法。 According to any one of claims 12 to 17, the conductive layer is made of an electromagnetic wave absorbing thermoelectric material capable of absorbing electromagnetic waves in the terahertz band and generating an electric signal from heat generated by absorbing the electromagnetic waves. A method for producing the described terahertz-band bandpass polarizer.
  22. 　前記電磁波吸収熱電材料がカーボンナノチューブである、請求項２１に記載のテラヘルツ帯バンドパス偏光子の製造方法。 The method for producing a terahertz bandpass polarizer according to claim 21, wherein the electromagnetic wave absorbing thermoelectric material is a carbon nanotube.
  23. 　カーボンナノチューブ分散液を濾過することで、カーボンナノチューブフィルムを作製し、前記カーボンナノチューブフィルムを前記基板に転写することで、前記導電層を形成する電磁波吸収熱電材料層形成工程をさらに備える、請求項２２に記載のテラヘルツ帯バンドパス偏光子の製造方法。 22. Further comprising an electromagnetic wave absorbing thermoelectric material layer forming step of filtering a carbon nanotube dispersion to form a carbon nanotube film and transferring the carbon nanotube film to the substrate to form the conductive layer. The method for manufacturing the terahertz band-pass polarizer according to 1.
PCT/JP2022/037618 2022-01-28 2022-10-07 Terahertz bandpass polarizer and method for manufacturing terahertz bandpass polarizer WO2023145143A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008075624A1 (en) * 2006-12-19 2008-06-26 Murata Manufacturing Co., Ltd. Optical component for terahertz band
JP2011180568A (en) * 2010-02-05 2011-09-15 Asahi Kasei E-Materials Corp Wire grid polarizing plate for terahertz band optical element, and electromagnetic wave processor
JP2014163674A (en) * 2013-02-21 2014-09-08 Seiko Epson Corp Terahertz wave detection apparatus, camera, imaging device, and measuring device
US20170146453A1 (en) * 2014-08-06 2017-05-25 University Of Massachusetts Single channel terahertz endoscopy
WO2019244841A1 (en) * 2018-06-18 2019-12-26 株式会社東海理化電機製作所 Method for processing reflective polarizing member, and reflective polarizing member

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008075624A1 (en) * 2006-12-19 2008-06-26 Murata Manufacturing Co., Ltd. Optical component for terahertz band
JP2011180568A (en) * 2010-02-05 2011-09-15 Asahi Kasei E-Materials Corp Wire grid polarizing plate for terahertz band optical element, and electromagnetic wave processor
JP2014163674A (en) * 2013-02-21 2014-09-08 Seiko Epson Corp Terahertz wave detection apparatus, camera, imaging device, and measuring device
US20170146453A1 (en) * 2014-08-06 2017-05-25 University Of Massachusetts Single channel terahertz endoscopy
WO2019244841A1 (en) * 2018-06-18 2019-12-26 株式会社東海理化電機製作所 Method for processing reflective polarizing member, and reflective polarizing member

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