WO2023138935A1 - Module capteur de courant pour un accumulateur d'énergie électrique - Google Patents

Module capteur de courant pour un accumulateur d'énergie électrique Download PDF

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Publication number
WO2023138935A1
WO2023138935A1 PCT/EP2023/050317 EP2023050317W WO2023138935A1 WO 2023138935 A1 WO2023138935 A1 WO 2023138935A1 EP 2023050317 W EP2023050317 W EP 2023050317W WO 2023138935 A1 WO2023138935 A1 WO 2023138935A1
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Prior art keywords
sensor
magnetic field
current
busbar
sensor element
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PCT/EP2023/050317
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German (de)
English (en)
Inventor
Robert Peter Uhlig
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Robert Bosch Gmbh
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Publication of WO2023138935A1 publication Critical patent/WO2023138935A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only

Definitions

  • the invention relates to a current sensor module for an electrical energy store.
  • the invention also relates to a method for operating a current sensor module for an electrical energy store.
  • a classic approach uses a measuring shunt, for example, to measure an electrical current flowing across a suitable conductor section based on an electrical voltage drop.
  • non-contact systems that use the magnetic field, for example, to evaluate the current flowing as the cause of the field, with different approaches being known for non-contact current measurement.
  • AMR, GMR and, more recently, TMR sensors anisotropic MR effect, giant magneto-resistance, tunneling magneto-resistance
  • the sensors mentioned are mostly used in measuring bridge arrangements for linear applications.
  • a current sensor module for an electrical energy store having: - At least one first sensor having two sensor elements, wherein a first sensor element of the first sensor is embodied in a first magnetic field measurement technology and a second sensor element of the first sensor is embodied in a second magnetic field measurement technology;
  • At least one second sensor having two sensor elements, wherein a first sensor element of the second sensor is formed in a first magnetic field measurement technology and a second sensor element of the second sensor is formed in a second magnetic field measurement technology, wherein sensing directions of the first and second sensor elements are arranged perpendicular to one another;
  • the printed circuit board being able to be attached to a busbar (200) of the electrical energy storage device in such a way that, when the current sensor module is installed as intended on the busbar of the electrical energy storage device, one sensor is arranged in each case in an edge section of the busbar.
  • a current sensor module is provided with which an electric current flowing in the busbar can be measured between the electrical energy store (e.g. battery) and a further element (e.g. inverter).
  • the electrical energy store e.g. battery
  • a further element e.g. inverter
  • a magnetic field measurement is made possible in up to three spatial directions. Based on the direct current measurement, a precise statement can be made about the state of charge of the battery.
  • the magnetic field sensors with their sensor elements implemented in different sensing technologies can cover high dynamics, whereby, for example, an emergency shutdown and a high-precision current measurement can be implemented.
  • an indirect measurement of the electric current in the conductor is carried out with the two sensors.
  • the object is achieved with a method for operating a current sensor module for an electrical energy store, having the steps: - determining a magnetic field with a first sensor with a first sensor element of a first magnetic field measurement technology;
  • a preferred development of the current sensor module is characterized in that it also has a plug connector arranged on the printed circuit board for connecting the current sensor module to a superordinate module.
  • the first magnetic field measurement technology of a first sensor element is one of the following: TMR, AMR, GMR.
  • TMR magnetic field measurement technology
  • AMR magnetic field measurement technology
  • GMR GMR
  • the second magnetic field measurement technology of the second sensor element is based on the Hall effect, in particular using graphs.
  • other so-called 2D materials can also be considered for use.
  • 2D materials are materials that mainly expand in one plane and only expand a few atomic layers perpendicular to it. Due to the desired position relative to the current-carrying conductor, the sensor element with this technology has a low-pass character, ie rapid changes in the current do not have as strong an effect on the sensor signal as slow changes. This technology is used to measure magnetic fields out-of-plane, ie from the plane of the power supply.
  • Another preferred embodiment of the current sensor module is characterized in that a sensor signal of the first sensor element of a first and a second sensor can be evaluated against a first threshold value of an amplitude of the magnetic field component, which is related to the electric current actually flowing in the busbar.
  • a further preferred embodiment of the current sensor is characterized in that the current sensor module also has at least one shielding element against an external electromagnetic field.
  • the shielding mentioned for example with ferromagnetic material in the form of a metal sheet, a U-shaped metal sheet, a sandwich of at least two metal sheets or a complete frame, etc., can advantageously be used to implement further improvements in terms of the current sensor module’s susceptibility to interference from magnetic fields that occur in the environment in addition to the magnetic field caused by the current to be measured.
  • a further preferred embodiment of the current sensor module is characterized in that the current sensors can be separated from the busbar by means of at least one dielectric spacer. In this way, an "air gap" between the busbar and the current sensors remains constant, because the dielectric hardly expands.
  • the dielectric preferably has a high permittivity in order to ensure galvanic isolation even in the case of high voltage differences between the voltage level of the current conductor and that of the current sensors. Examples of suitable materials are glass, FR2, FR4, epoxy resin or ceramics.
  • a further preferred embodiment of the current sensor module is characterized in that the sensors and their sensor elements are each arranged approximately in the outer third of the busbar.
  • the sensors and their sensor elements are each arranged approximately in the outer third of the busbar.
  • a further preferred embodiment of the current sensor module is characterized in that it also has a signal processing device which an emergency shutdown and a high-precision measurement of the current can be carried out.
  • a further preferred embodiment of the current sensor module is characterized in that the signal pre-processing can be carried out at least partially by means of the sensors.
  • the sensors advantageously assume signal preprocessing.
  • a further preferred embodiment of the current sensor module is characterized in that the signal processing can be carried out entirely by means of the evaluation device. This is how “dumb current sensors” are provided with electrical connections.
  • a further preferred embodiment of the current sensor module is characterized in that sensors each having a first sensor element of the first magnetic field measurement technology for the emergency shutdown and a second sensor element of the second magnetic field measurement technology can be used for a current measurement.
  • Device features disclosed result analogously from corresponding disclosed method features and vice versa. This means in particular that features, technical advantages and versions relating to the current sensor result from corresponding versions, features and technical advantages relating to the method for operating a current sensor for an electrical energy store and vice versa.
  • Fig. 1 shows a definition of a coordinate system
  • Fig. 2 is a plan view of an embodiment of a proposed
  • FIG. 4 shows a block diagram of a signal processing chain of the proposed current sensor module.
  • a current sensor module for an electrical energy store is proposed, with which the following two functions can be implemented in a sensor housing:
  • a magnetic detection of a rapidly increasing current in the event of a fault which can be a short circuit, for example, and the triggering of a e.g. semiconductor-based circuit breaker to safely isolate the battery from the rest of the circuit
  • Fig. 1 shows a coordinate system used in connection with the proposed current sensor module 100, in which the x and y axes are located on the surface of an electrical busbar 200 whose current is to be measured, with the y axis pointing in or against the direction of the current flowing.
  • Fig. 2 shows a top view of an embodiment of a proposed current sensor module 100.
  • Two sensors 1, 2 (2D magnetic sensors) can be seen, which are used both for the highly precise current measurement and for the emergency shutdown, which are placed on a printed circuit board 3 to the left and right of the center M at positions with all-pass character of the magnetic field component parallel to the x-direction.
  • the two sensors 1, 2 are each designed to measure a magnetic field using a first measurement technology and using a different second measurement technology.
  • one sensor element of the two sensors detects the same or at least essentially the same magnetic field component.
  • an integrated evaluation device 4 e.g. ASIC
  • ASIC integrated circuit
  • a high-precision current measurement by means of the current sensor module 100 takes place in a fully differential measuring operation, which can significantly reduce the influence of external magnetic fields or negate it compared to homogeneous magnetic fields.
  • the detected magnetic fields are verified with the respective other sensor 1, 2, so that, for example, an incorrect triggering of an emergency shutdown can be prevented and the sensor function is ensured at all times and can be monitored. Placing the sensors 1 , 2 with the evaluation circuit 4 in a row perpendicular to the direction of the electric current flow can increase robustness against irradiation and thus against measurement errors and lower the requirements for the wiring on the printed circuit board 3 .
  • Fig. 3 shows a cross-sectional view of the proposed current sensor module 100.
  • An area TP indicates arrangement positions of the sensors 1, 2 on the printed circuit board 3 with low-pass behavior for field components in the x-direction.
  • Areas AP indicate positions of the sensors 1, 2 on the printed circuit board 3 with all-pass behavior for field components in the x-direction.
  • HP indicates positions of the sensors 1, 2 on the printed circuit board 3 with high-pass behavior for field components in the x-direction.
  • the two sensors 1, 2 with sensitive axes in the x and z directions are placed outside the center M of the busbar 200 above the busbar 200, which can be designed, for example, as a connecting line between an electrical energy store (not shown) and an inverter (not shown).
  • the distance to the center M is determined by the dynamic behavior of the magnetic field, which can be described using known filter behavior.
  • An area should be selected for the emergency shutdown where the field component in the x-direction shows all-pass behavior in order not to burden the measurement process with a delay in detecting an overcurrent.
  • a TMR bridge that is sensitive in the x direction and has a high bandwidth is used to detect the instantaneous field component in the x direction.
  • the redundancy affects not only a single functional component, but both.
  • the possibility of using a differential is particularly advantageous Measuring principle of precise current measurement.
  • the magnetic field component perpendicular to the current direction and busbar surface (in the z-direction) has a different sign on both sides of the busbar 200 but the same amplitude as long as there are no high-frequency interferers in the area of influence of the conductor. If both magnetic field signals are subtracted in a central signal evaluation unit, the magnetic field signal is obtained with double the amplitude and external homogeneous magnetic fields are compensated to zero and fields with gradients are reduced to such an extent that only the gradient over the distance between the two sensors under consideration remains as a measurement error, i.e.
  • a second sensor element 1b or 2b preferably a graph-based Hall sensor, is used in the sensor 1, 2 for the precise detection of the electrical current in the busbar 200, which is installed in the same housing as the first sensor element 1a or 2a in the form of a TMR sensor. Due to the technology, the graphene Hall sensor is sensitive in the z-axis. The x-component of the magnetic field, which acts as a possible measurement error, is not recorded thanks to the almost non-existent cross-field sensitivity of the graph Hall sensor.
  • An exemplary implementation of a 3D magnetic sensor can include two sensors 1, 2, each with two sensor elements 1a, 1b or 2a, 2b, with the first sensor elements 1, 2a being sensitive parallel to the surface of the substrate, and the second sensor elements 1b, 2b being sensitive to magnetic fields perpendicular to the surface of the substrate.
  • the first sensor 1 is arranged to the left of the center M and the second sensor 2 to the right of the center M.
  • the two first sensor elements 1a, 2a differ in their wiring, with one of the two first sensor elements 1a, 2a being sensitive in a first direction and the other of the two first sensor elements 1a, 2a being sensitive in a second direction, which is perpendicular to the first direction, and at the same time lies parallel to the plane of the main extensions of the first sensor elements 1a, 2a.
  • An integrated circuit can lie underneath the functional sensor layers on the surface of a substrate, which is separated from the sensor layers with a passivation layer.
  • Shielding with ferromagnetic material in the form of a sheet, a U-shaped sheet, a sandwich consisting of two or more sheets, or a complete frame (not shown) can further improve susceptibility to interference from external fields.
  • a specific design, a suitable choice of material and a suitable geometric dimensioning are determined by means of an optimization process.
  • the specific positioning of the sensors 1, 2 to the left and right of the center M of the busbar is preferably such that the emergency shutdown has an all-pass behavior, as a result of which an effect of magnetic diffusion can be counteracted.
  • the current density initially increases at the edge of the busbar 200.
  • This effect is caused by electric current in the center of the conductor being impeded by electric eddy currents generated by the rapid increase in electric current.
  • a sensor above the center of the busbar 200 only receives the magnetic field that has arisen and only the magnetic field component parallel to the surface of the busbar with a delay compared to the electric current actually flowing.
  • this delay is referred to as a low-pass filter or, in special cases, as an integrator. The delay can be so great that a timely emergency shutdown of the affected circuits cannot be guaranteed.
  • An optimal position for the sensor element 1, 2 can preferably be determined using FEM (Finite Element Method) and depends on the distance of the measuring point from the busbar surface, the busbar geometry and the environmental conditions such as any shielding. At this optimal point, the sensors 1, 2 are placed in such a way that their sensor elements 1a, 2a are more likely to tend towards high-pass behavior in order to measure a rapid rise in current without delay, possibly somewhat overestimated.
  • FEM Finite Element Method
  • the sensors 1, 2 can already have part of the evaluation device 4, so that the emergency shutdown signals and also the measured magnetic field are transmitted on site in a machine-readable format. This is done, for example, on an integrated circuit that is part of the sensor 1, 2. Short supply lines advantageously help to keep measurement errors, e.g. caused by exposure to electromagnetic fields, to a minimum. Compensation for non-linearities and environmental conditions such as temperature can also be carried out very efficiently in this way.
  • Fig. 4 shows a block diagram of an exemplary signal processing chain of the current sensor module 100.
  • a block diagram of a sensor 1 can be seen with a first sensor element 1a for the emergency shutdown and integrated analog signal evaluation and the precise battery current sensor operated in regulated operation with the sensor element 1b based on graphene Hall.
  • the inputs and outputs of the chip packaged in a package can be purely analog or digital, depending on the specific implementation.
  • the first sensor element 1a is operated in an unregulated manner (open-loop arrangement).
  • An output of the first sensor element 1a is connected to an amplification element 6 (e.g. an instrument amplifier ker) out, the output of which is connected to a band limiter 7.
  • An output of the band limiter 7 is connected to a parallel circuit of absolute threshold value detection 8a and differential threshold value detection 8b, whose outputs are routed to a logical OR element 9.
  • a digital one-bit storage element 10 eg RS flip-flop
  • An output 20b represents a status indicator with at least two statuses, which provides status information regarding the occurrence of an error (error flag).
  • An output 20c represents a debugging output that can be used for troubleshooting.
  • the second sensor element 1b is used in regulated operation (closed-loop arrangement), with an output of the second sensor element 1b being routed to an amplification element 11 (instrument amplifier), the output of which is connected to a band-limiting element 12.
  • the output of the band limiting element 12 is fed to an analog/digital converter (ADC) 13 which is connected to a controller 14 .
  • ADC analog/digital converter
  • An input 20d can be used to configure the controller 14.
  • the output of the regulator 14 is connected to a measuring device 15 which is connected to a digital-to-analog converter (DAC) 16 .
  • An output of the DAC 16 is connected to an amplifier 17 whose output is connected to a magnetic field generator 18 .
  • a highly accurate measured value of the current measured by the current sensor module 100 can be provided at an output 20e.
  • the two technologically diversified sensors 1, 2 each have a TMR sensor in the sensor elements 1a, 2a and a graph sensor in the sensor elements 1b, 2b as well as a magnetic field generator, which ensures both the regulated operation of the high-precision battery current sensors and can be used for a built-in self-test (BIST).
  • BIST built-in self-test
  • the two sensors 1, 2 each have a TMR sensor in the sensor elements 1a, 2a and a graph sensor in the sensor elements 1b, 2b as well as a magnetic field generator as well as analog evaluation circuits and a control circuit that ensures both the regulated operation of the high-precision battery current sensors and can be used for the built-in self-test.
  • the distributed sensors are controlled via a central control unit, which can be implemented as an ASIC.
  • the emergency shutdown is preferably implemented with analogue, i.e. unclocked and continuous electronic circuits, the output signal being used according to a binary distinction according to its amplitude to distinguish the operating state.
  • the requirements for precise current measurement with regard to the bandwidth to be implemented are significantly lower than with emergency shutdown. Since the focus here is on the precision of the measurement, the measurement signal can be converted into a digital signal as early as possible in the signal path in the integrated circuit. The transmission of such a signal is essentially less error-prone, but there is a time delay compared to analog signals due to the conversion effort and clocking.
  • the noise is again reduced by approximately one order of magnitude, which is what makes precise current measurement with the required accuracy possible.
  • the magnetic field component perpendicular to the busbar surface basically has a low-pass behavior, which further reduces the noise due to an inherent bandwidth limitation.
  • a magnetic sensor is proposed with magnetoresistance technology, in particular in TMR technology (TMR, tunnel magnetoresistance).
  • TMR tunnel magnetoresistance
  • Such TM R sensors are constructed using the thin-film process.
  • the production is usually located in the so-called back-end to the ASIC production and can be understood as an add-on process for the production of electrical, integrated circuits, in which additional functional layers are deposited on the ASIC, which together form a sensor.
  • TMR sensors consist of two magnetic and electrically conductive layers that are separated from one another by an electrically non-conductive layer that is only a few atomic layers thick.
  • the reference layer which essentially forms the magnetic reference layer of a sensor element, is called the fixed layer or reference layer.
  • the magnetic alignment of this reference layer is fixed. If this reference layer is permanently influenced by an external magnetic field, this will destroy the TMR sensor.
  • the magnetically active layer is called the "free layer", whereby the orientation of the free layer is essentially determined by the external magnetic field.
  • the magnetic tunnel effect describes the probability that electrons will cross the non-conductive tunnel barrier that separates the reference layer and the free layer from one another.
  • the tunneling probability changes depending on the magnetic orientation of the two layers to one another and thus on the respective electron spins. Macroscopically, there is a change in the ohmic resistance of such a TMR resistance element.
  • the Wheatstone bridge resistors consist of several TMR sensors connected in parallel and in series, all of which have the same initial magnetic orientation within the respective bridge resistor.
  • orientations of the reference layers can be adjusted using strong magnetic fields with the aid of local heating. This can be carried out using methods known per se (e.g. in an oven, by means of a laser).
  • TMR sensors that are constructed using geometric anisotropy usually have more than one stable operating point.
  • the preferred working point can be left under the influence of high external magnetic fields, so that the sensor finds itself in a less preferred working point.
  • the operating point can be reset to the preferred operating point using a magnetic field generated in the sensor, which is generated, for example, via energized dedicated reset lines.
  • the fixed layer can be made up of a nickel-iron layer which, when executed in the correct aspect ratio, forms magnetic vortices (also referred to as vortex).
  • vortex When exposed to an external magnetic field, the center of gravity of the vortex and thus the proportion of parallel to antiparallel electron spins shifts in relation to the reference layer. If the external magnetic field is very large, the magnetic vortex dissolves and forms again by itself when the external field falls below a certain value.
  • TMR sensors are characterized by a large measuring range and low noise, especially in the vortex implementation.
  • TMR sensors have a large measurement bandwidth, regardless of the specific design of the free position, ie they are sensitive to a large frequency range and react very quickly to changes in the magnetic field, which is advantageous for the proposed application in emergency shutdown.
  • the graphene is transferred in a manner known per se to a suitable substrate that is connected to the passivation layer of the ASIC (e.g. using a deposition process or using a transfer process).
  • graphene is understood to be a 2D material made up of regularly arranged carbon atoms.
  • a 2D material is a material that is only a few atomic layers thick, in particular only a single atomic layer, a so-called monolayer.
  • the material graphene is characterized by a very high electron mobility. This fact particularly contributes to the suitability of graphene as a sensor material using the Hall effect.
  • the electrons moved by an impressed current are deflected by the Lorentz force created by an external magnetic field acting perpendicularly through the electrically conductive material. This deflection generates a voltage that can be measured at two electrodes or electrical contacts across the applied current and is a measure of the level of the external magnetic field. Due to the high electron mobility, only a small impressed current is necessary to achieve the necessary sensitivity. In particular, the sensitivity can be adjusted to the application by means of the impressed current depending on the current carrying capacity of the sensor. In relation to the external magnetic field, graphene Hall sensors can be adjusted via the size of the active area in the measuring range.
  • the combination of a TMR sensor and a graphene sensor in a semiconductor component in the form of the sensor 1, 2 enables the representation of a magnetic field sensor that is sensitive in all three spatial directions without having to use a technology to redirect the magnetic field lines.
  • the use of a two-dimensional sensor is advantageous in order on the one hand to measure the magnetic field component perpendicular to the current direction and parallel to the surface of the busbar and on the other hand to measure the magnetic field component perpendicular to the direction of the current and perpendicular to the surface of the busbar.
  • the solderable or press-fit semiconductor component which has both a TMR sensor and a graphene Hall sensor as well as an integrated evaluation circuit, is placed both to the left and to the right of the middle of the busbar, such that the TMR sensor is placed in an area where the magnetic field component perpendicular to the current direction and parallel to the surface of the busbar is not delayed compared to the time-dependent current curve, which is e.g. for a configuration without shielding and a distance of the magnetic sensor to the busbar of approx. 5.5 mm is about 75% of half the busbar width.
  • the integrated signal evaluation uses an instrumentation amplifier to increase the TMR sensor signal, limits the bandwidth of the TMR sensor signal and evaluates whether a first threshold has been exceeded.
  • the first threshold relates to the amplitude of the magnetic field component, which is related to the electric current actually flowing in the bus bar 200 .
  • the first threshold is adjusted when the sensor system is started up and corrected during runtime according to the temperature prevailing at the measurement location.
  • the integrated signal evaluation also carries out an evaluation with regard to falling below a second threshold.
  • the second threshold relates to the amplitude of the magnetic field component, which is related to the electric current actually flowing in the bus bar 200 .
  • the second threshold is adjusted when the current sensor module 100 is put into operation and is corrected during the runtime in accordance with the temperature prevailing at the measurement location.
  • a real differentiator is used to generate a signal proportional to the slope of the TMR sensor signal, which is compared to a third and fourth threshold.
  • this third and fourth Thresholds are adjusted when the sensor system is commissioned and corrected during runtime according to the temperature prevailing at the measurement location.
  • the threshold values can be set digitally or generated analogously via voltage dividers. Regardless of which threshold value was exceeded or not reached, a one-bit memory component is set, which can be a bipolar multivibrator, an R-S flip-flop or similar, which can only be reset using an external control signal.
  • the band-limited sensor signal is made available at an output of the sensor module.
  • the graphene Hall sensor output signal is amplified by an instrumentation amplifier 11 before being band limited by a band limiter 12 .
  • the graphene Hall sensor can be operated both in a regulated and in an unregulated manner.
  • the band-limited signal is corrected for non-linearity and temperature dependency. This correction preferably takes place in a digital signal processing path.
  • the signal obtained in this way which is proportional to the magnetic field, can either be output in analog form again or, in order to avoid measurement errors, made available at the output using a digital transmission protocol such as SPI, l 2 C or the like.
  • the sensor module In controlled operation, the sensor module also has lines with which a magnetic field can be generated perpendicular to the current direction and perpendicular to the busbar surface.
  • the band-limited and digitally converted signal is regulated around its zero point via a correspondingly parameterized control device.
  • the current that is driven through the additional lines serves as the manipulated variable.
  • a measure of the applied external magnetic field is the manipulated variable, which must be recorded and corrected for non-linearity and temperature.
  • the corrected manipulated variable is either output again in analog form or, better to avoid measurement errors, made available at the output using a digital transmission protocol such as SPI, l 2 C or the like.
  • the current sensor module 100 has further current lines which are able to generate a magnetic field in both the direction in which the first sensor element 1a, 2a is sensitive and the direction in which the second sensor element 1b, 2b is sensitive. These lines are used to check the functionality.
  • a second sensor 2 of identical construction is placed with the same orientation at the same distance from the center of the busbar 200 . As a result, a fully redundant system is obtained with regard to the TMR sensors. If there is a need for technology diversity in terms of functional safety, AMR or GMR sensor elements can also be used, which differ from TMR sensors in that they have a slightly modified layer structure, but can also be integrated into the same semiconductor component.
  • both TMR sensors have essentially the same sensor signals within the scope of the differences that result from installation tolerances and differences in components.
  • the graphene Hall sensor signals are also essentially the same in terms of amplitude, but opposite in sign.
  • a fully differential evaluation of the signals of the graphene Hall sensor signals in a central integrated circuit can lead to the doubling of the amplitude and simultaneous cancellation of any external magnetic fields that may have an effect when the two signals are subtracted.
  • known shielding measures can be taken.
  • Shielding measures can include a single metal sheet that is attached above the sensor modules and protrudes beyond busbar 200 .
  • Other embodiments of shielding measures are two metal sheets that are mounted above the sensor modules and below the busbar 200, but also the use of a comprehensive U-profile, which is closed below the busbar 200 and open above the sensor modules, or a comprehensive, closed frame that encloses both the busbar 200 and the sensors 1, 2.
  • Known embodiments of Shielding measures use laminated cores instead of solid components to minimize losses due to eddy currents and the influence of the shielding on the measurement signal.
  • the central evaluation device 4 which is placed centrally above the conductor rail 200, verifies and validates the sensor signals and processes them, such as the subtraction described above. Other functions of the central evaluation unit are communication with the higher-level system using a digital communication protocol.
  • the central evaluation device 4 can also parameterize the sensors 1 , 2 and the evaluation algorithms.
  • An essential function of the central evaluation device 4 is the determination of the maximum electric current that has flowed in the event of a fault. Since the triggering of a threshold via the change in the output of the bipolar multivibrator is made available directly to the higher-level system, the detection of the electrical current must track this event. The change in the electrical output voltage of the sensor module is detected at an input of the central evaluation device 4, which can release algorithms under hardware control via a trigger, and reading out of the running buffer memory is initiated.
  • the maximum current e.g. twenty values of the buffer memory can be recorded after the error detection has been triggered and the maximum amount of the sensor signal can be stored in a RAM, which can then be read out at a later point in time.
  • the readout takes place according to a specified time cycle, so that the values read out represent a period of time tailored to the application.
  • the central evaluation device 4 can have the functionality to initiate a built-in self-test and to change its parameterization on command from the higher-level system.
  • the central evaluation unit can be expanded to include the functionality of controlling the graph Hall sensor.
  • the proposed current sensor module 100 advantageously provides a highly accurate and fast battery current sensor measuring instrument that can measure the electric current supplied to and drawn from the battery, which means that a very precise display of the battery's state of charge can be implemented as a result.

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Abstract

L'invention concerne un module capteur de courant (100) pour un accumulateur d'énergie électrique, comprenant : - au moins un premier capteur (10) ayant deux éléments de capteur (1a, 1b), un premier élément de capteur (1a) du premier capteur (1) étant d'une première technologie de mesure de champ magnétique, et un second élément de capteur (1b) du premier capteur (1) étant d'une seconde technologie de mesure de champ magnétique ; - au moins un second capteur (2) ayant deux éléments de capteur (2a, 2b), un premier élément de capteur (2a) du second capteur (2) étant d'une première technologie de mesure de champ magnétique, et un second élément de capteur (2b) du second capteur (2) étant d'une seconde technologie de mesure de champ magnétique, des directions de détection des premiers et seconds éléments de capteur (1a, 1b, 2a, 2b) étant agencées de façon à être perpendiculaires l'une par rapport à l'autre ; - une carte de circuit imprimé (3) sur laquelle les deux capteurs (1, 2) sont agencés de manière à être galvaniquement conducteurs ; et - un dispositif d'évaluation (4) au moyen duquel des valeurs mesurées des deux capteurs (1, 2) peuvent être évaluées séparément l'une de l'autre, une mesure indirecte du courant pouvant être effectuée à l'aide de mesures de champ magnétique des deux capteurs (1, 2), la carte de circuit imprimé (3) pouvant être fixée à une barre omnibus (200) de l'accumulateur d'énergie électrique de sorte que, lorsque le module capteur de courant (100) est dans la position de fixation prévue sur la barre omnibus (200) de l'accumulateur d'énergie électrique, un capteur (1, 2) est agencé dans chaque partie de bord de la barre omnibus.
PCT/EP2023/050317 2022-01-20 2023-01-09 Module capteur de courant pour un accumulateur d'énergie électrique WO2023138935A1 (fr)

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DE102022200645.3A DE102022200645A1 (de) 2022-01-20 2022-01-20 Stromsensormodul für einen elektrischen Energiespeicher

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DE102012212367A1 (de) * 2011-07-14 2013-01-17 Continental Teves Ag & Co. Ohg Vorrichtung zum Messen eines elektrischen Stromes
WO2016021480A1 (fr) * 2014-08-05 2016-02-11 アルプス・グリーンデバイス株式会社 Ampèremètre
EP3415870A1 (fr) * 2017-06-14 2018-12-19 Allegro MicroSystems, LLC Circuits intégrés de capteur et procédés pour applications critiques de sécurité
EP3452838A1 (fr) * 2016-05-04 2019-03-13 Safran Electrical & Power Ensemble capteur de courant de barre omnibus
EP3508864A1 (fr) * 2018-01-05 2019-07-10 Melexis Technologies SA Structure de capteur de courant de décalage
EP3726234A1 (fr) * 2019-04-17 2020-10-21 Robert Bosch GmbH Procédé de diagnostic d'un moteur électrique
GB2594294A (en) * 2020-04-21 2021-10-27 Paragraf Ltd Apparatus

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US10180468B2 (en) 2016-06-08 2019-01-15 Infineon Technologies Ag Chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package
EP3671228B1 (fr) 2018-12-12 2023-03-29 Melexis Technologies SA Capteur de courant avec conducteur de courant intégré

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012212367A1 (de) * 2011-07-14 2013-01-17 Continental Teves Ag & Co. Ohg Vorrichtung zum Messen eines elektrischen Stromes
WO2016021480A1 (fr) * 2014-08-05 2016-02-11 アルプス・グリーンデバイス株式会社 Ampèremètre
EP3452838A1 (fr) * 2016-05-04 2019-03-13 Safran Electrical & Power Ensemble capteur de courant de barre omnibus
EP3415870A1 (fr) * 2017-06-14 2018-12-19 Allegro MicroSystems, LLC Circuits intégrés de capteur et procédés pour applications critiques de sécurité
EP3508864A1 (fr) * 2018-01-05 2019-07-10 Melexis Technologies SA Structure de capteur de courant de décalage
EP3726234A1 (fr) * 2019-04-17 2020-10-21 Robert Bosch GmbH Procédé de diagnostic d'un moteur électrique
GB2594294A (en) * 2020-04-21 2021-10-27 Paragraf Ltd Apparatus

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