WO2023126179A1 - Composant électroluminescent - Google Patents

Composant électroluminescent Download PDF

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Publication number
WO2023126179A1
WO2023126179A1 PCT/EP2022/085853 EP2022085853W WO2023126179A1 WO 2023126179 A1 WO2023126179 A1 WO 2023126179A1 EP 2022085853 W EP2022085853 W EP 2022085853W WO 2023126179 A1 WO2023126179 A1 WO 2023126179A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting component
deflection
semiconductor chip
top surface
Prior art date
Application number
PCT/EP2022/085853
Other languages
German (de)
English (en)
Inventor
Simon Jerebic
Daniel Leisen
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Publication of WO2023126179A1 publication Critical patent/WO2023126179A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • a light-emitting component is specified.
  • One problem to be solved is to specify a light-emitting component that has an increased decoupling efficiency.
  • the light-emitting component emits electromagnetic radiation, in particular light.
  • the light-emitting component can emit colored or white light, for example.
  • the light-emitting component comprises a semiconductor chip with a top surface, a bottom surface opposite the top surface, and a side surface, which connect the top surface and the bottom surface to one another.
  • the semiconductor chip can, for example, be cuboid within the scope of the manufacturing tolerance.
  • the semiconductor chip is a radiation-emitting semiconductor chip, in particular a light-emitting semiconductor chip, such as a light-emitting diode chip.
  • the semiconductor chip emits in particular light from the spectral range of UV radiation and/or blue light.
  • the semiconductor chip emits blue light when in operation.
  • the light-emitting component includes a first deflection element on the side faces of the semiconductor chip.
  • the first deflection element is formed from a material which is transparent to the electromagnetic radiation generated in the semiconductor chip during operation.
  • the first deflection element is transparent to this electromagnetic radiation.
  • the deflection element is arranged on the side surfaces of the semiconductor chip. This means in particular that the first deflection element can be arranged on all side surfaces of the semiconductor chip and encloses the semiconductor chip laterally. The deflection element is then arranged around the semiconductor chip in the manner of a frame, for example, and is arranged downstream of it on the side surfaces.
  • the first deflection element it is possible for the first deflection element to be in direct contact with the side surfaces of the semiconductor chip in places.
  • the first deflection element covers at least 90% of the side areas of the semiconductor chip. It is also possible for the deflection element to completely cover the side faces of the semiconductor chip and to be in direct contact with them.
  • the first deflection element can terminate flush with the semiconductor chip on the top surface and on the bottom surface of the semiconductor chip.
  • the light-emitting component comprises a conversion element with a Top surface, a bottom surface opposite the top surface and side surfaces which connect the top surface and the bottom surface to one another.
  • the conversion element can therefore be cuboid within the scope of the manufacturing tolerance.
  • the conversion element comprises at least one luminescence conversion material.
  • the luminescence conversion substance can be arranged, for example, as particles in a matrix material of the conversion element.
  • the luminescence conversion substance it is possible for the luminescence conversion substance to be applied to a transparent carrier of the conversion element.
  • the conversion element is a ceramic conversion element that consists of the luminescence conversion material.
  • the conversion element is provided to convert electromagnetic radiation from a first wavelength range into electromagnetic radiation in a second wavelength range, the electromagnetic radiation from the second wavelength range being for example lower in energy than the electromagnetic radiation from the first wavelength range.
  • the light-emitting component includes a second deflection element on the side surfaces of the conversion element.
  • the second deflection element can, for example, be designed similarly to the first deflection element and in particular consist of the same material.
  • the second deflection element can be arranged in the form of a frame around the conversion element and connected at least in places to the side surfaces of the Conversion element are in direct contact. It is possible for the second deflection element to cover at least 90% of the side surfaces of the conversion element. In particular, it is possible for the second deflection element to completely cover the side surfaces of the conversion element. Within the scope of the manufacturing tolerance, the second deflection element can terminate flush with the conversion element on the top surface and on the bottom surface.
  • the conversion element faces the top surface of the semiconductor chip with its bottom surface. It is possible that the conversion element is in direct contact with the semiconductor chip.
  • the conversion element can be mechanically firmly connected to the semiconductor chip. It is also possible that an adhesion-promoting material, such as an adhesive, is arranged between the conversion element and the semiconductor chip.
  • the conversion element and the semiconductor chip can have the same or a similar thickness. “Similar thickness” means that the thickness of the conversion element deviates from the thickness of the semiconductor chip by at most ⁇ 20%.
  • the conversion element protrudes laterally beyond the side faces of the semiconductor chip. This means that the conversion element has, for example, a larger bottom area than the top area of the semiconductor chip. The conversion element then does not terminate flush with the semiconductor chip at the side surfaces, but protrudes laterally beyond at least one of the side surfaces, in particular all side surfaces of the semiconductor chip.
  • the semiconductor chip emits primary light through the side surfaces into the first deflection element during operation. This means that at least part of the electromagnetic radiation generated in the semiconductor chip is emitted through the side surfaces during operation and enters the first deflection element from there.
  • the semiconductor chip is a so-called volume emitter. In the case of a volume emitter, at least 10%, in particular at least 30%, of the total electromagnetic radiation coupled out exits through the side surfaces. The remaining electromagnetic radiation leaves the volume emitter, for example, through the top surface.
  • the conversion element emits secondary light during operation through the side face of the conversion element into the second deflection element. This means that at least part of the secondary light generated in the conversion element passes through the side surfaces into the second deflection element.
  • the conversion element can likewise be a volume emitter.
  • primary light can also be emitted from the conversion element into the second deflection element. For example, only part of the primary light is converted into secondary light in the conversion element. Another part of the primary light remains unconverted. A portion of this proportion can be radiated through the side surfaces of the conversion element into the second deflection element.
  • a light-emitting component is specified with - a semiconductor chip, with a top surface, a bottom surface opposite the top surface and side surfaces which connect the top surface and the bottom surface to one another,
  • the conversion element faces the top surface of the semiconductor chip with its bottom surface
  • the conversion element protrudes laterally beyond the side faces of the semiconductor chip
  • the semiconductor chip emits primary light during operation through the side surfaces into the first deflection element
  • the conversion element emits secondary light during operation through the side surfaces into the second deflection element.
  • the light-emitting component described here is based, inter alia, on the following considerations.
  • volume emitters When volume emitters are used, a significant proportion of the light emerges from the side surfaces. This laterally exiting light does not initially leave the volume emitter in a main emission direction, which runs perpendicularly to the cover surface, for example, and is therefore not available without restrictions for the application.
  • the first deflection element makes it possible to deflect the primary light from the semiconductor chip, which leaves it through the side surfaces, in the direction of the conversion element. The fact that the conversion element to the The primary light can be deflected from the first deflection element into the conversion element.
  • the light-emitting component then emits, for example, mixed light from the primary light and the secondary light. If the conversion element is particularly thick and has a particularly high density of phosphor material, the proportion of the primary light can be greatly reduced and full conversion can take place through the conversion element. In this case it is possible, for example, for the light-emitting component to only emit secondary light.
  • the primary light passes from the first deflection element into the conversion element.
  • the primary light is coupled into the conversion element for example by refraction and/or reflection from the first deflection element.
  • primary light exiting through the side surfaces of the semiconductor chip is coupled into the conversion element by the first deflection element.
  • the conversion element completely covers the semiconductor chip and the first deflection element. The This means that the conversion element protrudes laterally so far beyond the side surfaces of the semiconductor chip that the first deflection element is also covered by the conversion element.
  • the side surfaces of the first deflection element facing away from the semiconductor chip are flush with the side surfaces of the conversion element.
  • the component comprises a first reflector element which is set up for reflecting primary light and secondary light, the first reflector element laterally surrounding the semiconductor chip and the first deflection element.
  • the first reflector element is, for example, a reflective coating of the deflection element and/or a potting material that is filled with reflective particles.
  • the reflector element can have a matrix material that is formed with the same material as the adjacent deflection element. The matrix material can be filled with light-reflecting particles, such as titanium dioxide particles. Overall, the reflector element can then appear white.
  • the light-emitting component comprises a second reflector element, which is set up for reflecting primary light and secondary light, the second reflector element laterally surrounding the conversion element and the second deflection element.
  • the second reflector element can be designed like the first reflector element, for example. It is possible for the first deflection element to have a cover surface which is flush with the cover surface of the semiconductor chip within the scope of the manufacturing tolerance. Furthermore, it is possible for the first reflector element to have a cover surface which is flush with the cover surface of the first deflection element. Overall, the first reflector element, the first deflection element and the semiconductor chip then form a flat surface on the cover surfaces, on which the conversion element, the second reflector element and the second deflection element can be arranged.
  • the top surface of the second reflector element, the second deflection element and the conversion element which faces away from the top surface of the semiconductor chip, the first reflector element and the first deflection element can also be flat within the scope of the manufacturing tolerance.
  • the second reflector element is then arranged on the first reflector element.
  • the second reflector element and the first reflector element may be formed in one piece with one another and have no boundary surface, but rather to be manufactured together in a single manufacturing step, for example.
  • the component comprises an absorption element that is designed to absorb primary light and secondary light, the absorption element laterally surrounding the second reflector element and the conversion element and the second deflection element.
  • the absorption element borders directly on the second reflector element on the side of the second reflector element facing away from the second deflection element reflector element .
  • the absorption element can, for example, comprise a matrix material into which radiation-absorbing particles are introduced.
  • the second reflector element and the absorption element can comprise the same matrix material.
  • the absorbent particles can be soot particles, for example.
  • the absorption element can appear black. The contrast of the component to the outside can be increased by the absorption element.
  • the light-emitting component comprises a cover element with a top surface, a bottom surface opposite the top surface, and side surfaces which connect the top surface and the bottom surface to one another.
  • the cover element is cuboid, for example.
  • the cover member is formed with a light transmissive material.
  • the covering element can be designed to be transparent or dif fus scattering.
  • the cover element can be designed to be diffusely scattering in such a way that it appears white from the outside and underlying components of the light-emitting component are barely visible or not visible when the component is switched off.
  • the light-emitting component can also include a third deflection element, which is arranged on the side surfaces of the cover element.
  • the third deflection element can, for example, enclose the cover element in the manner of a frame and can be in direct contact with the side surfaces of the cover element in places.
  • the third deflection element can cover at least 90% of the side surfaces or the side surfaces of the cover element completely.
  • the cover element faces the top surface of the conversion element with its bottom surface and protrudes laterally beyond the side surfaces of the conversion element. This means that the cover element can, for example, have a larger surface area on its bottom surface than the top surface of the conversion element. It is possible for the cover element to protrude laterally beyond at least one side surface, in particular all side surfaces of the conversion element.
  • the cover element and the conversion element can be in direct contact with one another. It is also possible for an adhesive material, such as an adhesive, to be arranged between the cover element and the conversion element.
  • an adhesive material such as an adhesive
  • the cover element emits primary light and secondary light through the side surfaces into the third deflection element. This means that at least part of the radiation that enters the cover element leaves it through the side surfaces. In this sense, the cover element can also be a volume emitter.
  • the third deflection element then ensures that at least part of the radiation exiting through the side surfaces is deflected in the direction of a main emission direction, which runs, for example, perpendicularly to the top surface of the cover element.
  • the light-emitting component comprises a third reflector element, which is designed to reflect primary light and secondary light, the third reflector element laterally surrounding the cover element and the third deflection element.
  • the third reflector element can, like the first and the second reflector element be trained . On the top surface of the cover element, this can run flush with a top surface of the third deflection element, and this in turn can run flush with a top surface of the third reflector element, so that the light-emitting component has a flat surface on the top surface of the cover element, which extends over the third deflection element and the third reflector element extends.
  • the third reflector element can in particular be arranged on the second reflector element.
  • At least one of the deflection elements is wedge-shaped or approximately wedge-shaped at least in places; in particular, all the deflection elements present can be wedge-shaped or wedge-shaped in places. With this shape, primary light and/or secondary light can be deflected particularly effectively in the direction of a main emission direction of the light-emitting component.
  • the deflection elements are arranged laterally offset from one another. This means that the second deflection element is arranged offset laterally with respect to the first deflection element. This can lead, for example, to the second deflection element not being arranged directly above the first deflection element at any point.
  • the third deflection element can be arranged offset laterally with respect to the second deflection element, so that the third deflection element is not arranged directly above the second deflection element at any point.
  • Side faces of the deflection elements that are associated with the element such as the semiconductor chip or the conversion element or facing away from the cover element can form a flat surface overall within the scope of the manufacturing tolerance, which runs obliquely to a main plane of extension of the component.
  • the main extension plane of the component runs, for example, parallel to the top surface of the semiconductor chip.
  • the reflector elements that is to say the first reflector element and the second reflector element and optionally the third reflector element, are formed in one piece.
  • the reflector elements it is possible for the reflector elements to be produced simultaneously in a single production step and for no boundaries to be formed between them.
  • mechanical stability of the light-emitting component it is possible for mechanical stability of the light-emitting component to be imparted in particular by the reflector elements which, for example as encapsulation, laterally enclose the stack of semiconductor chip and conversion element and optionally cover element with the deflection elements arranged in between.
  • the conversion element has a thickness of at least 10 ⁇ m, preferably at least 90 ⁇ m, in particular at least 100 ⁇ m.
  • the thickness of the conversion element is 115 ⁇ m.
  • the thickness of the conversion element is at most 150 ⁇ m or at most 200 ⁇ m.
  • the thickness of the conversion element is measured in a vertical direction, which runs, for example, perpendicular to a top surface and a bottom surface of the conversion element.
  • the component described here proves to be particularly advantageous for conversion elements of this thickness in particular, since for these conversion elements a large part of the secondary light and the primary light exits through the side faces of the conversion element.
  • FIG. 1A shows a first exemplary embodiment of a light-emitting component described here using a schematic sectional illustration.
  • FIG. 1B shows a corresponding schematic plan view. The sectional view of FIG. 1A runs along the line AA′ in FIG. 1B.
  • the light-emitting component comprises a semiconductor chip 1, which is, for example, a volume emitter that emits blue light during operation. That is, the semiconductor chip 1 comprises, for example, a growth substrate made of sapphire, on which corresponding semiconductor layers have grown epitaxially.
  • the semiconductor chip 1 comprises a top surface 1a, a bottom surface 1b opposite the top surface 1a and side surfaces 1c, which connect the top surface 1a and the bottom surface 1b to one another.
  • the light-emitting component comprises a first deflection element 2, which is arranged on the side faces 1c of the semiconductor chip 1 and is in direct contact with them.
  • the first deflection element 2 is formed, for example, with a radiation-transmissive plastic material such as silicone or polysiloxane, or consists of one of these materials.
  • a transparent starting material for forming the first deflection element 2 is attached to the side surfaces 1c of the semiconductor chip 1 on a temporary carrier.
  • the semiconductor chip it is possible for the semiconductor chip to be inserted into a material depot made from material of the first deflection element 2 that has been metered onto a temporary carrier.
  • the light-emitting component also includes a conversion element 4 with a top surface 4a, a bottom surface 4b opposite the top surface 4a, and side surfaces 4c, which connect the top surface 4a and the bottom surface 4b to one another.
  • the conversion element 4 has, for example, a thickness of at least 10 ⁇ m, preferably at least 90 ⁇ m, in particular 115 ⁇ m.
  • a second deflection element 5 is arranged on the side surfaces 4c of the conversion element, which, for example, can be designed in accordance with the first deflection element 2 and can be produced in the same way.
  • the conversion element faces the top surface 1a of the semiconductor chip 1 with its bottom surface 4b and is in direct contact with the semiconductor chip 1, for example.
  • the conversion element 4 protrudes laterally beyond the semiconductor chip 1 on all side faces and protrudes laterally beyond the latter.
  • the conversion element 4 also projects completely laterally beyond the second deflection element 2 .
  • primary light 12 generated in the semiconductor chip which leaves the semiconductor chip through the side faces 1c, is emitted into the first deflection element 2 and from there enters the conversion element 4 .
  • the conversion element 4 emits secondary light 13 and optionally primary light 12 through the side surfaces 4c into the second deflection element 5 .
  • the production of the arrangement of semiconductor chip 1 with first deflection element 2 and conversion element 4 with second deflection element 5 can be carried out by stacking semiconductor chip 1 and conversion element 4 in reverse order on a temporary carrier.
  • the light-emitting component also includes a first reflector element 3, which is set up to reflect primary light 12 and secondary light 13, with the first reflector element 3 laterally surrounding the semiconductor chip and the first deflection element 2 and, for example, directly adjoining it borders .
  • the light-emitting component includes a second reflector element 6, which is designed to reflect primary light 12 and secondary light 13, the second reflector element 6, the conversion element 4 and the second Surrounds deflection element 5 laterally and, for example, directly adjacent to this.
  • the second reflector element 6 is arranged on the first reflector element 3 .
  • the second reflector element can, for example, be applied by techniques such as film-assisted molding or jetting after the stack of semiconductor chip 1 and conversion element 4 with the associated deflection elements 2 , 5 has been built up.
  • the second reflector element 6 is formed in front of the first reflector element 3 . It is also possible for the second reflector element 6 and the first reflector element 3 to be formed in the same work step, so that the reflector elements have no horizontal boundary surfaces.
  • the light-emitting component can then be applied to the carrier 10, which comprises, for example, connection points and/or conductor tracks and/or vias for electrically contacting the semiconductor chip 1.
  • the light-emitting component comprises an absorption element 7, which is designed to absorb primary light 12 and secondary light 13, with the absorption element 7 surrounding the second reflector element 6 and the conversion element 4 as well as the second deflection element 5 at the side and directly adjoining the second reflector element 6 borders .
  • the absorption element 7 can in particular be formed with a black material and is used to improve the contrast behind the second reflector element 6 .
  • the absorption element 7 can be applied, for example, after the light-emitting component has been applied to the carrier 10 by dispensing or film-assisted molding with the black material of the absorption element 7 .
  • the absorption element 7 may take place on the temporary carrier, for example after the production of the second reflector element 6 and before the production of the first reflector element 3 .
  • the light-emitting component comprises a cover element 8 with a top surface 8a, a bottom surface 8b opposite the top surface 8a, and side surfaces 8c, which connect the top surface 8a and the bottom surface 8b to one another.
  • a third deflection element 9 is arranged around the cover element 8 on the side faces 8c of the cover element 8 , which can be designed like the first deflection element and the second deflection element.
  • the cover element 8 has its bottom surface 8b facing the cover surface 4a of the conversion element 4 and the cover element 8 protrudes laterally beyond the side surfaces 4c of the conversion element.
  • the cover element 8 also projects completely beyond the second deflection element 5, so that during operation primary light 12 and secondary light 13 are emitted from the second deflection element 5 into the cover element 8.
  • the cover element 8 emits primary light 12 during operation and secondary light 13 through the side surfaces 8c into the third deflection element 9 .
  • the light-emitting component of the exemplary embodiment in FIG. 3 also includes a third reflector element 11, which is set up to reflect primary light 12 and secondary light 13, the third reflector element 11 laterally surrounding the cover element 8 and the third deflection element 9 and directly adjoining them.
  • the third reflector element 11 can be designed like the first reflector element 3 and/or the second reflector element 6 .
  • all of the reflector elements can be formed in one piece and can be produced in a single process step.
  • the deflection elements 2 , 5 , 9 are wedge-shaped at least in places.
  • the geometric features of the deflection elements such as the angle, the leg lengths or the curvature, in particular of the outer side surfaces, to be changed in order to adapt the light-emitting component to the requirements of the application.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention porte sur un composant électroluminescent comprenant : - une puce semi-conductrice (1), comprenant une surface supérieure (1a), une surface inférieure (1b) située à l'opposé de la surface supérieure (1a), et des surfaces latérales (1c) reliant la surface supérieure (1a) et la surface inférieure (1b) l'une à l'autre, - un premier élément de déflexion (2) au niveau des surfaces latérales (1c) de la puce semi-conductrice (1), - un élément de conversion (4) comprenant une surface supérieure (4a), une surface inférieure (4b) située à l'opposé de la surface supérieure (4a), et des surfaces latérales (4c) reliant la surface supérieure (4a) et la surface inférieure (4b) l'une à l'autre, - un second élément de déflexion (5) au niveau des surfaces latérales (4c) de l'élément de conversion (4), où : - la surface inférieure (4b) de l'élément de conversion (4) fait face à la surface supérieure (1a) de la puce semi-conductrice (1), - l'élément de conversion (4) fait saillie latéralement au-delà des surfaces latérales (1c) de la puce semi-conductrice (1), - la puce semi-conductrice (1) émet une lumière primaire (12) à travers les surfaces latérales (1c) dans le premier élément de déflexion (2) pendant le fonctionnement, et - l'élément de conversion (4) émet une lumière secondaire (13) à travers les surfaces latérales (4c) dans le second élément de déflexion (5) pendant le fonctionnement.
PCT/EP2022/085853 2021-12-30 2022-12-14 Composant électroluminescent WO2023126179A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021006411.9A DE102021006411A1 (de) 2021-12-30 2021-12-30 Lichtemittierendes bauelement
DE102021006411.9 2021-12-30

Publications (1)

Publication Number Publication Date
WO2023126179A1 true WO2023126179A1 (fr) 2023-07-06

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DE (1) DE102021006411A1 (fr)
WO (1) WO2023126179A1 (fr)

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