WO2023125488A3 - Transistor optical tweezer having increased received illumination intensity and microfluidic device - Google Patents

Transistor optical tweezer having increased received illumination intensity and microfluidic device Download PDF

Info

Publication number
WO2023125488A3
WO2023125488A3 PCT/CN2022/142198 CN2022142198W WO2023125488A3 WO 2023125488 A3 WO2023125488 A3 WO 2023125488A3 CN 2022142198 W CN2022142198 W CN 2022142198W WO 2023125488 A3 WO2023125488 A3 WO 2023125488A3
Authority
WO
WIPO (PCT)
Prior art keywords
transmitting
region
subregions
electrode
phototransistor
Prior art date
Application number
PCT/CN2022/142198
Other languages
French (fr)
Chinese (zh)
Other versions
WO2023125488A2 (en
Inventor
缪小虎
李培炼
程鹏
Original Assignee
彩科(苏州)生物科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 彩科(苏州)生物科技有限公司 filed Critical 彩科(苏州)生物科技有限公司
Publication of WO2023125488A2 publication Critical patent/WO2023125488A2/en
Publication of WO2023125488A3 publication Critical patent/WO2023125488A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/50273Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the means or forces applied to move the fluids
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2400/00Moving or stopping fluids
    • B01L2400/04Moving fluids with specific forces or mechanical means
    • B01L2400/0403Moving fluids with specific forces or mechanical means specific forces
    • B01L2400/0415Moving fluids with specific forces or mechanical means specific forces electrical forces, e.g. electrokinetic
    • B01L2400/0424Dielectrophoretic forces

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Clinical Laboratory Science (AREA)
  • Dispersion Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Hematology (AREA)
  • Light Receiving Elements (AREA)

Abstract

The present invention provides a transistor optical tweezer, comprising: a first electrode; a second electrode; a phototransistor array provided between the first electrode and the second electrode, the phototransistors being physically separated from each other by first insulating components, and each phototransistor comprising a collector region, a base region, and a transmitting region that are supported by a substrate; the transmitting region of each phototransistor comprising at least two transmitting subregions, the transmitting subregions being physically separated at least partly by the base regions, and the at least two transmitting subregions having a common base region and collector region. The transistor structure implements an increased photogenerated current without modifying the light intensity of a light beam being shone or the size of a window of transistors, thus allowing the generation of an increased DEP force. In addition, compared with an undivided transmitting region, the presence of the multiple transmitting subregions allows the distribution of a nonuniform electric field generated due to illumination to be denser and more uniform, thus facilitating the manipulation of a micro-object.
PCT/CN2022/142198 2021-12-28 2022-12-27 Transistor optical tweezer having increased received illumination intensity and microfluidic device WO2023125488A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111625050.5A CN116351351A (en) 2021-12-28 2021-12-28 Transistor optical tweezers with increased illuminated intensity and microfluidic device
CN202111625050.5 2021-12-28

Publications (2)

Publication Number Publication Date
WO2023125488A2 WO2023125488A2 (en) 2023-07-06
WO2023125488A3 true WO2023125488A3 (en) 2023-08-17

Family

ID=86914690

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/142198 WO2023125488A2 (en) 2021-12-28 2022-12-27 Transistor optical tweezer having increased received illumination intensity and microfluidic device

Country Status (2)

Country Link
CN (1) CN116351351A (en)
WO (1) WO2023125488A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101075544A (en) * 2006-05-19 2007-11-21 三星Sdi株式会社 Light emission device, method of manufacturing the light emission device, and display device having the light emission device
WO2008119066A1 (en) * 2007-03-28 2008-10-02 The Regents Of The University Of California Single-sided lateral-field and phototransistor-based optoelectronic tweezers
CN107223074A (en) * 2014-12-08 2017-09-29 伯克利照明有限公司 Microfluidic device comprising transverse direction/vertical transistor structure and production and preparation method thereof
CN109603941A (en) * 2019-01-11 2019-04-12 京东方科技集团股份有限公司 Micro-fluidic chip system and micro-fluidic chip
CN111359688A (en) * 2020-03-31 2020-07-03 京东方科技集团股份有限公司 Microfluidic chip and application method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101075544A (en) * 2006-05-19 2007-11-21 三星Sdi株式会社 Light emission device, method of manufacturing the light emission device, and display device having the light emission device
WO2008119066A1 (en) * 2007-03-28 2008-10-02 The Regents Of The University Of California Single-sided lateral-field and phototransistor-based optoelectronic tweezers
CN107223074A (en) * 2014-12-08 2017-09-29 伯克利照明有限公司 Microfluidic device comprising transverse direction/vertical transistor structure and production and preparation method thereof
CN110624614A (en) * 2014-12-08 2019-12-31 伯克利之光生命科技公司 Microfluidic devices including lateral/vertical transistor structures and methods of making and using the same
CN109603941A (en) * 2019-01-11 2019-04-12 京东方科技集团股份有限公司 Micro-fluidic chip system and micro-fluidic chip
CN111359688A (en) * 2020-03-31 2020-07-03 京东方科技集团股份有限公司 Microfluidic chip and application method thereof

Also Published As

Publication number Publication date
CN116351351A (en) 2023-06-30
WO2023125488A2 (en) 2023-07-06

Similar Documents

Publication Publication Date Title
US20160318038A1 (en) Circuit-Based Optoelectronic Tweezers
Zhang et al. Tribotronic phototransistor for enhanced photodetection and hybrid energy harvesting
CN101281933A (en) Photoelectric device based on carbon nano-tube, optoelectronic integrated circuit unit and circuit
GB2498151A (en) Illumination apparatus
WO2017174102A8 (en) Module for a multilevel converter
ATE453136T1 (en) DEVICE WITH A ROTATING POLLUTION TRAP
JP6299337B2 (en) Phase modulation apparatus and control method thereof
EA200702446A1 (en) SEMICONDUCTOR BENDED POLYMER COMPOSITION
TWI552207B (en) Workpiece processing system and method of processing a workpeiece
AR026750A1 (en) CONNECTION CABLE WITH ELECTRICAL PLUG CONNECTOR
JP2017507364A (en) Electro-optic modulator and method of generating electro-optic modulator
WO2023125488A3 (en) Transistor optical tweezer having increased received illumination intensity and microfluidic device
WO2007035389A3 (en) Vacuum reaction chamber with x-lamp heater
CL2021002909S1 (en) Portable power device.
WO2020126768A3 (en) Stage apparatus
RU2015145491A (en) MODERNIZED LIGHT SOURCE ON ORGANIC LIGHT-EMISSING DIODES (OSIDES)
JP2015520915A5 (en)
AU3749401A (en) Semiconductor optoelectronic device with electrically adjustable transfer function
US9595623B1 (en) PCSS-based semiconductor device, switching device, and method
EP4243008A3 (en) Electronic device
WO2020239221A8 (en) Integrated component and power switching device
RU2012102025A (en) HIGH VOLTAGE DEVICE
ES2143986T3 (en) SUPRACONDUCTOR TRANSISTOR WITH FIELD EFFECT AND PROCEDURE OF A MULTILAYER STRUCTURE SUCH AS THAT USED IN THE TRANSISTOR.
CN209056459U (en) A kind of focusing ring
CN103900042B (en) A kind of light source installing mechanism of LED lamp

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22914742

Country of ref document: EP

Kind code of ref document: A2