WO2023122925A1

WO2023122925A1 - Display device and manufacturing method therefor

Info

Publication number: WO2023122925A1
Application number: PCT/CN2021/141872
Authority: WO
Inventors: 樊勇
Original assignee: 厦门市芯颖显示科技有限公司
Priority date: 2021-12-28
Filing date: 2021-12-28
Publication date: 2023-07-06

Abstract

The present application discloses a display device and a manufacturing method therefor. The display device comprises a driving substrate, a light-emitting assembly layer, and a third metal layer; the light-emitting assembly layer comprises a plurality of light-emitting chip units and a first metal layer surrounding the light-emitting chip units; a color conversion substrate comprises a second metal layer and a filling layer; a through hole is formed at a position where the second metal layer corresponds to a top light-emitting surface; the filling layer is provided in the through hole; and the third metal layer corresponds to the first metal layer and is used for connecting the first metal layer and the second metal layer in a sealed manner.

Description

Display device and manufacturing method thereof

technical field

The present application relates to the field of Micro LED (micro light emitting diode) display technology, and in particular to a display device and a manufacturing method thereof.

Background technique

At present, due to the use of inorganic light-emitting diode technology, Micro LED chips can achieve ns-level response speed and ultra-high brightness. In the three-color full-color MicroLED micro-display, the pixel pitch of the MicroLED is very small. To prevent color crossover between pixels, it is necessary to use black barriers in the color conversion substrate above the MicroLEDs for shading, and set color barriers between the black barriers. The conversion layer is converted into three-color light. On the one hand, the absorption rate of the black retaining wall reduces the light efficiency. In addition, because the black retaining wall is made of organic material, water vapor easily enters the color conversion layer from the black retaining wall, which reduces the reliability of the color conversion layer. And it will also spread to the MicroLED area, resulting in shortened service life. Therefore, how to improve the light output rate of Micro LED and increase the effect of blocking water vapor has become a technical problem that needs to be solved urgently.

technical problem

Embodiments of the present application provide a display device and a manufacturing method thereof, which are used to solve the problem of reducing light efficiency due to the use of a black barrier wall in the color conversion substrate above the MicroLED for shading, and the fact that water vapor easily enters the color conversion layer from the black barrier wall, resulting in The reliability of the color conversion layer is reduced, and it also spreads to the MicroLED area, resulting in a technical problem of shortening the service life.

technical solution

An embodiment of the present application provides a display device, including a driving substrate, a light-emitting component layer, a color conversion substrate, and a third metal layer; wherein, the light-emitting component layer includes a plurality of light-emitting chip units disposed on the driving substrate and surrounding the The first metal layer provided by the light-emitting chip unit; each of the light-emitting chip units has a light-emitting surface; the color conversion substrate includes a second metal layer and a filling layer, and the second metal layer is on the light-emitting surface corresponding to the light-emitting chip unit A through hole is provided at the position, and the filling layer is arranged in the through hole; the third metal layer is arranged corresponding to the first metal layer, and is used for sealing and connecting the first metal layer and the second metal layer.

Further, the third metal layer is connected to the first metal layer and the second metal layer by low-temperature welding.

Further, the light-emitting component layer further includes: a flat layer disposed on the driving substrate and filled between the light-emitting chip units; and a transparent electrode layer covering the flat layer and It is electrically connected with the light-emitting chip unit; the first metal layer is set on the transparent electrode layer or the first metal layer and the transparent electrode layer are set on the same layer.

Further, the light-emitting component layer further includes: a reflective layer disposed on the side wall of the light-emitting chip unit, or disposed on the side wall of the light-emitting chip unit and the non-reflective layer on the top surface of the light-emitting chip unit. Top out the glossy area.

Further, the light-emitting chip unit includes three blue MicroLED chips, and the filling layer includes a red light color conversion layer and a green light color conversion layer; two of the three through holes corresponding to one light-emitting chip unit There is a red light color conversion layer and a green light color conversion layer.

Further, the color conversion substrate further includes a blue light reflective layer, which is disposed in the through hole or on the second metal layer and corresponds to the red light color conversion layer and the green light color conversion layer. location settings.

Further, the blue light reflective layer is composed of metal film/transparent dielectric film/metal film three-layer film, or the blue light reflective layer is composed of metal film/transparent dielectric film/metal film/transparent dielectric film/metal film five-layer film .

Further, the display device further includes: a light-condensing layer disposed on the color conversion substrate; the light-condensing layer includes a plurality of light-condensing lenses, and the light-condensing lenses are arranged in one-to-one correspondence with the through holes.

Further, the color conversion substrate further includes a transparent film layer, which is arranged on the side of the second metal layer away from the driving substrate; the condenser lens is arranged in the through hole, or the condenser lens set on the transparent film layer.

Further, the light-emitting chip unit includes a red MicroLED chip, a green MicroLED chip, and a blue MicroLED chip; the filling layer includes a filter layer, and the filter layer includes a red filter layer, a green filter layer, and a blue filter layer. Optical layer: the red filter layer is set corresponding to the red MicroLED chip, the green filter layer is set corresponding to the green MicroLED chip, and the blue filter layer is set corresponding to the blue MicroLED chip.

The present application also provides a method for manufacturing a display device, including the steps of: fabricating a light-emitting component layer on a driving substrate, which is to transfer and bond a plurality of light-emitting chip units on the driving substrate, and on the driving substrate Making a flat layer to fill between the light-emitting chip units, each of the light-emitting chip units has a light-emitting surface; making a transparent electrode layer on the flat layer, and the transparent electrode layer and the top of the light-emitting chip unit The light-emitting surface is electrically connected; a first metal layer is made on the transparent electrode layer, and the first metal layer is arranged around the light-emitting chip unit; a color conversion substrate is made, and the color conversion substrate includes a second metal layer and A filling layer, the second metal layer is provided with a through hole corresponding to the light-emitting surface of the light-emitting chip unit, the filling layer is arranged in the through hole; and the color conversion substrate is attached to the light-emitting component layer , the through hole of the second metal layer is arranged corresponding to the light-emitting chip unit, and the first metal layer and the second metal layer are sealed and connected by low-temperature soldering of the third metal layer.

Further, the color conversion substrate further includes a transparent film layer, and the transparent film layer is arranged on one side of the second metal layer; the step of manufacturing the color conversion substrate specifically includes: making a transparent film layer on a carrier substrate ; Making a second metal layer on the transparent film layer, etching a through hole on the second metal layer, and making a filling layer in the through hole.

Further, after attaching the color conversion substrate to the light-emitting component layer, it also includes: peeling the carrier substrate from the transparent film layer; The layer includes a plurality of condensing lenses, and the condensing lenses are arranged in one-to-one correspondence with the through holes.

Beneficial effect

In the embodiment of the present application, the second metal layer is used to replace the existing black retaining wall in the color conversion substrate, which can reflect light instead of absorb light, increase the light output rate, and use low-temperature soldering to connect the surrounding light-emitting chip unit through the third metal layer The first metal layer and the second metal layer are arranged so that the metal layer seals the light-emitting chip unit and the filling layer, avoiding the entry of water vapor, and increasing the service life. Furthermore, the filling layer disposed in the through hole of the second metal layer includes a color conversion layer, which can reuse reflected light and increase the light extraction rate. Further, a blue light reflective layer corresponding to the red light color conversion layer and the green light color conversion layer is provided in the through hole, and the blue light reflective layer can reflect light to the color conversion layer, thereby improving the light conversion rate and utilization rate, and the luminous brightness of the display device is improved.

Description of drawings

FIG. 1 is a schematic structural diagram of a display device provided by an embodiment of the present application;

Fig. 2 is a flow chart of a manufacturing method of a display device provided by an embodiment of the present application;

Fig. 3 is a schematic structural view of a light-emitting component layer provided by an embodiment of the present application;

Fig. 4 is a schematic structural diagram of a color conversion substrate provided by an embodiment of the present application after fabrication;

Fig. 5 is a schematic diagram of the structure provided by an embodiment of the present application after the low-temperature welding of the third metal layer is completed;

Fig. 6 is a schematic view of the structure when the carrier substrate is peeled off from the transparent film layer provided by an embodiment of the present application;

FIG. 7 is a schematic structural diagram of a display device provided by another embodiment of the present application.

Explanation of reference signs:

driving substrate 1, light-emitting component layer 2, color conversion substrate 3,

The third metal layer 4, the silicon substrate 11, the complementary metal oxide semiconductor layer 12,

light emitting chip unit 21, first metal layer 22, planar layer 23,

Transparent electrode layer 24, reflective layer 25, metal electrode 26,

The second metal layer 31, the filling layer 32, the transparent film layer 33,

Light-gathering layer 34, blue-light reflective layer 35, carrier substrate 36,

The display device 100, the light emitting surface 211, the blue MicroLED chip 212,

Through hole 311, red light color conversion layer 321, green light color conversion layer 322,

condenser lens 341, red MicroLED chip R, green MicroLED chip G,

Blue MicroLED chip B, red filter layer 32R, green filter layer 32G,

Blue filter layer 32B.

Embodiments of the present invention

The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application. In addition, it should be understood that the specific implementations described here are only used to illustrate and explain the present application, and are not intended to limit the present application. In this application, unless stated to the contrary, the used orientation words such as "up" and "down" usually refer to up and down in the actual use or working state of the device, specifically the direction of the drawing in the drawings ; while "inside" and "outside" refer to the outline of the device.

In this application, unless otherwise expressly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. "Below", "beneath" and "under" the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.

Embodiments of the present application provide a display device and a manufacturing method of the display device. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.

Example 1

As shown in FIG. 1 , Embodiment 1 of the present application provides a display device 100, which includes a driving substrate 1, a light-emitting component layer 2, a color conversion substrate 3, and a third metal layer 4; wherein, the light-emitting component layer 2 includes A plurality of light-emitting chip units 21 on the driving substrate 1 and a first metal layer 22 arranged around the light-emitting chip units 21; each of the light-emitting chip units 21 has a light-emitting surface 211; the color conversion substrate 3 includes a second metal layer 31 and a filling layer 32, the second metal layer 31 is provided with a through hole 311 at the position corresponding to the light emitting surface 211 of the light-emitting chip unit 21, and the filling layer 32 is set in the through hole 311; the third metal layer 31 The layer 4 is disposed corresponding to the first metal layer 22 and is used for sealing and connecting the first metal layer 22 and the second metal layer 31 . In the embodiment of the present application, the second metal layer 31 is used in the color conversion substrate 3 to replace the existing black barrier, which can reflect light instead of absorbing light, and increase the light extraction rate. Moreover, the second metal layer 31 can block the lateral transmission of water vapor, prevent water vapor from corroding the filling layer 32 , and improve the reliability of the filling layer 32 .

In this embodiment, the third metal layer 4 is connected to the first metal layer 22 and the second metal layer 31 by low temperature welding. The low-temperature welding method realizes the sealed connection without affecting the structure of the substrate, and makes the metal layer seal the light-emitting chip unit 21 and the filling layer 32 to prevent water vapor from entering and increase the service life.

As shown in FIG. 1 , in this embodiment, the driving substrate 1 includes: a silicon substrate 11 and a complementary metal oxide semiconductor layer (CMOS) 12 disposed on the silicon substrate 11 . The silicon substrate 11 is a carrier, and the CMOS layer 12 is a circuit layer for driving the light-emitting chip unit 21 , which can effectively control the light-emitting and off of the light-emitting chip unit 21 .

In this embodiment, the light-emitting component layer 2 further includes a flat layer 23 and a transparent electrode layer 24; the flat layer 23 is provided on the driving substrate 1 and filled between adjacent light-emitting chip units 21; The transparent electrode layer 24 covers the planar layer 23 and is electrically connected to the light-emitting chip unit 21; the first metal layer 22 is disposed on the transparent electrode layer 24 or the first metal layer 22 is connected to the The transparent electrode layer 24 is provided on the same layer. Wherein, the flat layer 23 is made of an opaque material, which can block the cross-light phenomenon of adjacent light-emitting chip units 21 and reduce the installation distance between the light-emitting chip units 21 . The material of the transparent electrode layer 24 includes indium tin oxide (ITO), which can transmit light, so that the light emitted by the light-emitting chip unit 21 can pass through the transparent electrode layer 24 .

As shown in FIG. 1 , in this embodiment, the light-emitting component layer 2 further includes: a reflective layer 25 disposed on the side wall of the light-emitting chip unit 21 , or disposed on the side wall of the light-emitting chip unit 21 And the area on the top surface of the light-emitting chip unit 21 that is not the light-emitting surface 211 , that is, the reflective layer 25 is not disposed in the area where the light-emitting surface 211 is located. The reflective layer 25 can effectively reflect light, so that all the light is emitted from the light-emitting surface 211. On the one hand, it can effectively block the cross-light phenomenon of adjacent light-emitting chip units 21, and reduce the installation distance between the light-emitting chip units 21. On the other hand, it can The light emitted by the light emitting chip unit 21 can be fully utilized. At this time, since the reflective layer 25 is provided, the material of the flat layer 23 may also be a transparent material such as silicon nitride or silicon oxide.

In this embodiment, the light-emitting chip unit 21 includes three blue-light MicroLED chips 212, and the filling layer 32 includes a red light color conversion layer 321 and a green light color conversion layer 322; A red light color conversion layer 321 and a green light color conversion layer 322 are disposed in two through holes 311 of the holes 311 . It can be understood that every three blue MicroLED chips 212 and one red light color conversion layer 321 and one green light color conversion layer 322 form three colors of red, green and blue light, constituting a pixel unit. The way that the light-emitting chip unit 21 includes three blue-light MicroLED chips 212 is convenient for mass production, and the manufacturing process is reduced compared with the structure of three kinds of red, green and blue MicroLED chips in one pixel unit. The metal electrode 26 is set under the blue MicroLED chip 212, so that the reflective effect of the metal electrode 26 can be used to cover the non-extruded light surface 211 area around the light-emitting chip unit 21 together with the reflective layer 25, so that the light-emitting chip The light emitted by the unit 21 is all emitted from the light emitting surface 211 , which further improves the utilization rate of the light emitted by the light emitting chip unit 21 .

As shown in FIG. 1 , in this embodiment, the color conversion substrate 3 further includes a blue light reflective layer 35 disposed in the through hole 311, and the blue light reflective layer 35 corresponds to the red light color conversion layer 321 and the position of the green color conversion layer 322 are set. The blue light reflective layer 35 can effectively reflect blue light and selectively pass red light and green light, so that the blue light is reflected again into the red light color conversion layer 321 and the green light color conversion layer 322 to excite quantum dots to generate Red light and green light improve light utilization efficiency.

In this embodiment, the blue light reflective layer 35 is composed of three layers of metal film/transparent medium film/metal film, or the blue light reflective layer 35 is composed of metal film/transparent medium film/metal film/transparent medium film/metal film Composed of five layers of film; the metal film material is any one of silver, aluminum, copper, and gold, and the transparent layer material is any one of metal oxide, silicon nitride, and silicon oxide. The blue light reflective layer 35 of the five-layer film structure has a higher blue light reflectance than the blue light reflective layer 35 of the three-layer film structure, and can more effectively reflect blue light to the red light color conversion layer 321 and the green light color conversion layer The quantum dots are excited in 322 to generate red light and green light, which improves the light utilization efficiency.

As shown in FIG. 1 , in this embodiment, the color conversion substrate 3 further includes a transparent film layer 33 disposed on a side of the second metal layer 31 away from the driving substrate 1 . The transparent film layer 33 includes polyimide (PI)/inorganic layer/polyimide (PI); the thickness of the transparent film layer 33 is 2-10um. The transparent film layer 33 seals the through hole 311 of the second metal layer 31 and can effectively protect the filling layer 32 disposed in the through hole 311 .

As shown in FIG. 1 , in this embodiment, the display device further includes: a condensing layer 34 disposed on the color conversion substrate 3 ; the condensing layer 34 includes a plurality of condensing lenses 341 , the condensing The optical lenses 341 are provided in one-to-one correspondence with the through holes 311 . The condensing lens 341 can condense and output the light emitted through the through hole 311 to avoid scattering and mixing light.

The present application preferably sets multiple condenser lenses 341 separately. In other embodiments, multiple condenser lenses 341 can also be arranged on the transparent substrate 33 to form the light condenser layer 34, and the condenser lenses 341 are arranged on the On the transparent film layer 33 , the transparent film layer 33 can carry a condenser lens 341 disposed above the through hole 311 .

Based on the display device 100 described above, as shown in FIG. 2 , the present application further provides a method for manufacturing a display device, including the following steps S1-S3.

S1. Fabricate a light-emitting component layer 2 on a driving substrate 1 . Transfer and bond a plurality of light-emitting chip units 21 on the driving substrate 1, each of the light-emitting chip units 21 has a light emitting surface 211; a flat layer 23 is formed on the driving substrate 1 to fill the light-emitting chips Between the units 21; a transparent electrode layer 24 is made on the flat layer 23, and the transparent electrode layer 24 is electrically connected to the light-emitting chip unit 21; a first metal layer is made on the transparent electrode layer 24 22 , the first metal layer 22 is disposed around the light emitting chip unit 21 . The driving substrate 1 includes a silicon substrate 11 and a complementary metal oxide semiconductor (CMOS) layer 12 disposed on the silicon substrate 11 . The silicon substrate 11 is a carrier, and the CMOS layer 12 is a circuit layer for driving the light-emitting chip unit 21 , which can effectively control the light-emitting and off of the light-emitting chip unit 21 . The structure after the light-emitting component layer 2 is fabricated is shown in FIG. 3 .

S2. Fabricate a one-color conversion substrate 3 . The color conversion substrate 3 includes a transparent film layer 33, a second metal layer 31 and a filling layer 32. The second metal layer 31 is provided with a through hole 311 at a position corresponding to the light-emitting surface 211 of the light-emitting chip unit 21, so The filling layer 32 is disposed in the through hole 311 . The step of making the color conversion substrate 3 specifically includes: making a second metal layer 31 , etching a through hole 311 on the second metal layer 31 , and making a filling layer 32 in the through hole 311 .

In this embodiment, the color conversion substrate 3 further includes a transparent film layer 33, and the transparent film layer 33 is provided on one side of the second metal layer 31; the step of manufacturing the color conversion substrate 3 specifically includes: Making a transparent film layer 33 on the substrate 36; making a second metal layer 31 on the transparent film layer 33, etching a through hole 311 on the second metal layer 31, and making a filling layer 32 in the through hole 311 .

In this embodiment, the color conversion substrate 3 further includes a blue light reflective layer 35, the blue light reflective layer 35 is arranged in the through hole 311, and is located between the transparent film layer 33 and the filling layer 32, wherein the three adjacent through holes The hole 311 is a group of through hole units, and the blue light reflective layer 35 is arranged in the two through holes 311 in each group of through hole units. The step 3 of making the color conversion substrate specifically includes: making the blue light reflective layer 35 and fill layer 32 . The structure after the color conversion substrate 3 is fabricated is shown in FIG. 4 .

S3 , attaching the color conversion substrate 3 to the light emitting component layer 2 . The through hole 311 of the second metal layer 31 is arranged corresponding to the light-emitting chip unit 21 , and is sealed and connected to the first metal layer 22 and the second metal layer 31 by low-temperature soldering of the third metal layer 4 . The structure after low-temperature welding of the third metal layer 4 is shown in FIG. 5 .

Wherein, attaching the color conversion substrate 3 to the light-emitting component layer 2 further includes: peeling the carrier substrate 36 from the transparent film layer 33; and making a light-gathering layer 34 on the transparent film layer 33, The condensing layer 34 includes a plurality of condensing lenses 341 , and the condensing lenses 341 are arranged in one-to-one correspondence with the through holes 311 . FIG. 6 is a schematic diagram of the structure when the carrier substrate 36 is peeled off from the transparent film layer 33 . FIG. 1 is a schematic diagram of the overall structure of the display device after the light-gathering layer 34 is manufactured.

It should be noted that, in the embodiment of the present application, there is no sequence in the preparation of the light-emitting component layer 2 and the color conversion substrate 3 on the driving substrate 1, that is, the light-emitting component layer 2 can be fabricated on the driving substrate 1 at the same time. As for the manufacturing process of the color conversion substrate 3, the light-emitting component layer 2 can also be fabricated on the driving substrate 1 first and then the color conversion substrate 3, or the color conversion substrate 3 can be produced first and then the light-emitting component layer 2 can be fabricated on the driving substrate 1.

In the embodiment of the present application, the second metal layer 31 is used in the color conversion substrate 3 to replace the existing black barrier, which can reflect light instead of absorb light, increase the light output rate, and use low-temperature welding to connect the surrounding through the third metal layer 4 The first metal layer 22 and the second metal layer 31 provided on the light-emitting chip unit 21 make the metal layer seal the light-emitting chip unit 21 and the filling layer 32 to prevent water vapor from entering and increase the service life. Furthermore, the filling layer 32 disposed in the through hole 311 of the second metal layer 31 includes a red light color conversion layer 321 and a green light color conversion layer 322 , which can reuse reflected light and increase the light extraction rate. Further, a blue light reflective layer 35 corresponding to the red light color conversion layer 321 and the green light color conversion layer 322 is provided in the through hole 311, and the blue light reflective layer 35 can reflect light to the red light The color conversion layer 321 and the green light color conversion layer 322 improve the light conversion rate and utilization rate, and improve the luminous brightness of the display device.

Example 2

As shown in FIG. 7 , Embodiment 2 of the present application includes most of the technical features of Embodiment 1. The difference is that the MicroLED chips included in the light-emitting chip unit 21 in Embodiment 2 include red MicroLED chips R, At least one of the green MicroLED chip G and the blue MicroLED chip B; the filling layer 32 includes a filter layer (CF), and the filter layer includes a red filter layer 32R, a green filter layer 32G and a blue filter layer At least one of layers 32B. Specifically, the red filter layer 32R is set corresponding to the red MicroLED chip R, the green filter layer 32G is set corresponding to the green MicroLED chip G, and the blue filter layer 32B is set corresponding to the blue MicroLED chip B.

Embodiment 2 is different from that in Embodiment 1 in that the light-emitting chip unit 21 is a blue-light MicroLED chip 212. At the same time, the blue-light reflective layer in Embodiment 1 is not provided in Embodiment 2, so that it can also be used in the color conversion substrate 3. The second metal layer 31 replaces the existing black barrier, which can reflect light instead of absorbing light, thereby increasing the light extraction rate. And a filling layer 32 is formed in the through hole 311 of the second metal layer 31, the filling layer 32 includes a red filter layer 32R, a green filter layer 32G and a blue filter layer 32B, and the second metal layer 31 can block water vapor The lateral transmission to the filling layer 32 improves the reliability of the filling layer 32 . And the first metal layer 22 and the second metal layer 31 arranged around the light-emitting chip unit 21 are connected through the third metal layer 4 by low-temperature welding, so that the metal layer seals the light-emitting chip unit 21 and the filling layer 32 to prevent water vapor from entering. Increased service life.

Based on the display device 100 described above, please refer to FIG. 2 in Embodiment 1 for the manufacturing method of the corresponding display device in Embodiment 2. The sequence of steps is the same as that in Embodiment 1, and the difference is only that it is fabricated on the driving substrate 1. The light-emitting chip unit 21 in the light-emitting component layer 2 and the filling layer 32 formed in the through hole 311 of the second metal layer 31 adopt the structure of the second embodiment. The manufacturing method of the display device in Embodiment 2 specifically includes the following steps S1-S3.

S1. Fabricate a light-emitting component layer 2 on a driving substrate 1, which is to transfer and bond a plurality of light-emitting chip units 21 on the driving substrate 1, and each of the light-emitting chip units 21 has a light-emitting surface 211; A flat layer 23 is formed on the drive substrate 1 to fill between the light-emitting chip units 21; a transparent electrode layer 24 is formed on the flat layer 23, and the transparent electrode layer 24 is electrically connected to the light-emitting chip unit 21. Connection; making a first metal layer 22 on the transparent electrode layer 24 , and the first metal layer 22 is arranged around the light-emitting chip unit 21 . The driving substrate 1 includes a silicon substrate 11 and a complementary metal oxide semiconductor (CMOS) layer 12 disposed on the silicon substrate 11 . The silicon substrate 11 is a carrier, and the CMOS layer 12 is a circuit layer for driving the light-emitting chip unit 21 , which can effectively control the light-emitting and off of the light-emitting chip unit 21 . The light-emitting chip unit 21 includes at least one of a red MicroLED chip R, a green MicroLED chip G, and a blue MicroLED chip B.

S2. Fabricate a color conversion substrate 3, the color conversion substrate 3 includes a second metal layer 31 and a filling layer 32, and the second metal layer 31 is provided with a through hole corresponding to the light-emitting surface 211 of the light-emitting chip unit 21 311 , the filling layer 32 is disposed in the through hole 311 . The step of making the color conversion substrate 3 specifically includes: making a second metal layer 31 , etching a through hole 311 on the second metal layer 31 , and making a filling layer 32 in the through hole 311 .

In this embodiment, the color conversion substrate 3 further includes a transparent film layer 33, and the transparent film layer 33 is provided on one side of the second metal layer 31; at this time, the step of manufacturing the color conversion substrate 3 specifically includes: Fabricate a transparent film layer 33 on a carrier substrate 36; fabricate a second metal layer 31 on the transparent film layer 33, etch and form a through hole 311 on the second metal layer 31, and fabricate in the through hole 311 fill layer 32 . The filling layer 32 includes a filter layer (CF), and the filter layer includes at least one of a red filter layer 32R, a green filter layer 32G and a blue filter layer 32B.

S3, attaching the color conversion substrate 3 to the light-emitting component layer 2, the through hole 311 of the second metal layer 31 is set corresponding to the light-emitting chip unit 21, specifically, the red filter layer 32R is set corresponding to the red MicroLED chip R , the green filter layer 32G is set corresponding to the green MicroLED chip G, and the blue filter layer 32B is set corresponding to the blue MicroLED chip B. The first metal layer 22 and the second metal layer 31 are hermetically connected by means of low-temperature welding of the third metal layer 4 .

Wherein, after attaching the color conversion substrate 3 to the light-emitting component layer 2, it also includes: peeling the carrier substrate 36 from the transparent film layer 33; , the light-condensing layer 34 includes a plurality of light-condensing lenses 341 , and the light-condensing lenses 341 are arranged in one-to-one correspondence with the through holes 311 . FIG. 6 is a schematic diagram of the structure when the carrier substrate 36 is peeled off from the transparent film layer 33 . FIG. 1 is a schematic diagram of the overall structure of the display device after the light-gathering layer 34 is manufactured.

The above is a detailed introduction of a display device provided by the embodiment of the present application and its manufacturing method. In this paper, specific examples are used to illustrate the principle and implementation of the present application. The description of the above embodiment is only to help understand the present application. The method of application and its core idea; at the same time, for those skilled in the art, according to the idea of this application, there will be changes in the specific implementation and scope of application. In summary, the content of this specification should not be understood as Limitations on this Application.

Claims

A display device, characterized in that it comprises:

drive substrate;

The light-emitting component layer includes a plurality of light-emitting chip units arranged on the driving substrate and a first metal layer arranged around the light-emitting chip units; each of the light-emitting chip units has a light-emitting surface;

The color conversion substrate includes a second metal layer and a filling layer, the second metal layer is provided with a through hole at the position corresponding to the light emitting surface of the light-emitting chip unit, and the filling layer is set in the through hole; and

The third metal layer is arranged corresponding to the first metal layer, and is used for sealing and connecting the first metal layer and the second metal layer.
The display device according to claim 1, wherein the third metal layer is connected to the first metal layer and the second metal layer by low temperature welding.
The display device according to claim 1, wherein the light-emitting component layer further comprises:

a flat layer disposed on the driving substrate and filled between the light-emitting chip units; and

A transparent electrode layer, the transparent electrode layer covers the flat layer and is electrically connected to the light-emitting chip unit; the first metal layer is arranged on the transparent electrode layer, or the first metal layer is connected to the transparent electrode layer The transparent electrode layers are arranged on the same layer.
The display device according to claim 3, wherein the light-emitting component layer further comprises:

The reflective layer is arranged on the sidewall of the light emitting chip unit, or on the sidewall of the light emitting chip unit and the non-ejecting light surface area on the top surface of the light emitting chip unit.
The display device according to claim 1, wherein the light-emitting chip unit includes three blue MicroLED chips, and the filling layer includes a red light color conversion layer and a green light color conversion layer; A red light color conversion layer and a green light color conversion layer are arranged in two of the three through holes.
The display device according to claim 5, wherein the color conversion substrate further includes a blue light reflective layer disposed in the through hole and corresponding to the red light color conversion layer and the green light color conversion layer location settings.
The display device according to claim 6, wherein the blue light reflective layer is composed of a metal film/transparent dielectric film/metal film three-layer film, or the blue light reflective layer is composed of a metal film/transparent dielectric film/metal film /transparent dielectric film/metal film composed of five layers of film.
The display device according to claim 1, further comprising:

The light-gathering layer is arranged on the color conversion substrate; the light-gathering layer includes a plurality of light-gathering lenses, and the light-gathering lenses are arranged in one-to-one correspondence with the through holes.
The display device according to claim 8, wherein the color conversion substrate further includes a transparent film layer disposed on the side of the second metal layer away from the driving substrate; the condenser lens is disposed on the The side of the transparent film layer away from the second metal layer.
The display device according to claim 1, wherein the light-emitting chip unit includes a red MicroLED chip, a green MicroLED chip, and a blue MicroLED chip; the filling layer includes a filter layer, and the filter layer includes a red filter optical layer, green filter layer, and blue filter layer; the red filter layer is set corresponding to the red MicroLED chip, the green filter layer is set corresponding to the green MicroLED chip, and the blue filter layer is set corresponding to the The blue MicroLED chip setup is described above.
A method for manufacturing a display device, comprising the steps of:

Fabricate a light-emitting component layer on a driving substrate, which is to transfer and bond a plurality of light-emitting chip units on the driving substrate, each of the light-emitting chip units has a light-emitting surface, and fabricate a flat layer on the driving substrate Filling between the light-emitting chip units; forming a transparent electrode layer on the flat layer, the transparent electrode layer is electrically connected to the light-emitting chip unit; forming a first metal layer on the transparent electrode layer , the first metal layer is disposed around the light-emitting chip unit;

Fabricate a color conversion substrate, the color conversion substrate includes a second metal layer and a filling layer, the second metal layer is provided with a through hole at the position corresponding to the light emitting surface of the light-emitting chip unit, and the filling layer is provided on the in the through hole; and

The color conversion substrate is bonded to the light-emitting component layer, the through hole of the second metal layer is set corresponding to the light-emitting chip unit, and the first metal layer and the first metal layer are sealed and connected by low-temperature welding of the third metal layer. second metal layer.
The method for manufacturing a display device according to claim 11, wherein the color conversion substrate further includes a transparent film layer, and the transparent film layer is provided on one side of the second metal layer; The steps specifically include: making a transparent film layer on a carrier substrate; making a second metal layer on the transparent film layer, etching a through hole on the second metal layer, and making a filling layer in the through hole .
The method for manufacturing a display device according to claim 12, further comprising: after attaching the color conversion substrate to the light-emitting component layer:

peeling off the carrier substrate from the transparent film layer; and

A light concentrating layer is fabricated on the transparent film layer, the light concentrating layer includes a plurality of concentrating lenses, and the concentrating lenses are arranged in one-to-one correspondence with the through holes.