WO2023120284A1 - Module haute fréquence et dispositif de communication - Google Patents

Module haute fréquence et dispositif de communication Download PDF

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Publication number
WO2023120284A1
WO2023120284A1 PCT/JP2022/045730 JP2022045730W WO2023120284A1 WO 2023120284 A1 WO2023120284 A1 WO 2023120284A1 JP 2022045730 W JP2022045730 W JP 2022045730W WO 2023120284 A1 WO2023120284 A1 WO 2023120284A1
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Prior art keywords
terminal
wave filter
band
elastic wave
inductor
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PCT/JP2022/045730
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English (en)
Japanese (ja)
Inventor
穣 岩永
敬 渡辺
真一郎 ▲高▼柳
正英 武部
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株式会社村田製作所
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Publication of WO2023120284A1 publication Critical patent/WO2023120284A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/46—Networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving

Definitions

  • the present invention relates to high frequency modules and communication devices.
  • Patent Document 1 discloses a multiplexer (high frequency module) having a configuration in which three filters (first filter, second filter and third filter) are each connected to a common terminal. An inductor connected in series with the first filter is arranged between the first filter and the common terminal, and the second filter and the third filter are directly connected to the common terminal without the inductor. With this configuration, by demultiplexing and/or combining three signals having different frequency bands with the first filter, the second filter, and the third filter, the three signals can be transmitted simultaneously.
  • the present invention has been made to solve the above-described problems, and provides a high-frequency module and a communication device having four or more commonly-connected elastic wave filters and having reduced insertion loss. aim.
  • a high-frequency module can simultaneously transmit a signal of a first band, a signal of a second band, a signal of a third band, and a signal of a fourth band.
  • a high-frequency module having a first terminal, a second terminal, and a third terminal, switching connection and disconnection between the first terminal and the second terminal, and connecting and disconnecting the first terminal and the third terminal; a switch circuit for switching connections; an inductor having one end connected to a second terminal; a first acoustic wave filter connected to the other end of the inductor and having a first passband including at least part of a first band; and a second acoustic wave filter having a second passband including at least part of the second band connected to the other end of the second band and connected to the second terminal without an inductor and including at least part of the third band A third acoustic wave filter having a third passband, and a fourth acoustic wave filter connected to the
  • the present invention it is possible to provide a high frequency module and a communication device having four or more commonly connected elastic wave filters and reduced insertion loss.
  • FIG. 1 is a circuit configuration diagram of a high frequency module and a communication device according to an embodiment.
  • FIG. 2A is a diagram showing a first example of a circuit configuration of an acoustic wave filter that constitutes the high frequency module according to the embodiment.
  • FIG. 2B is a diagram showing a second example of the circuit configuration of the elastic wave filter that constitutes the high frequency module according to the embodiment.
  • FIG. 3A is a plan view and a cross-sectional view schematically showing a first example of an elastic wave resonator that constitutes the elastic wave filter according to the embodiment.
  • FIG. 3B is a cross-sectional view schematically showing a second example of the elastic wave resonator that constitutes the elastic wave filter according to the embodiment.
  • FIG. 1 is a circuit configuration diagram of a high frequency module and a communication device according to an embodiment.
  • FIG. 2A is a diagram showing a first example of a circuit configuration of an acoustic wave filter that constitutes the high frequency module according to
  • FIG. 3C is a cross-sectional view schematically showing a third example of the elastic wave resonator that constitutes the elastic wave filter according to the embodiment.
  • FIG. 4 is a circuit configuration diagram of a high frequency module according to a comparative example.
  • FIG. 5A is a Smith chart showing impedance characteristics of each filter according to the embodiment.
  • FIG. 5B is a Smith chart showing impedance characteristics of each filter according to the comparative example.
  • FIG. 6 is a circuit configuration diagram of a high frequency module according to a modification.
  • FIG. 7 is a Smith chart showing impedance characteristics of each filter according to the modification.
  • FIG. 8 is a plan view of the high frequency module according to the embodiment.
  • FIG. 9 is a cross-sectional view of a high frequency module according to an example.
  • connection means not only direct connection with connection terminals and/or wiring conductors, but also electrical connection via other circuit elements. Also, “connected between A and B” and “connected between A and B” mean being connected to A and B on a path connecting A and B.
  • path refers to a transmission line composed of a wire through which a high-frequency signal propagates, an electrode directly connected to the wire, and a terminal directly connected to the wire or the electrode.
  • planar view means viewing an object by orthographic projection from the positive side of the z-axis onto the xy plane.
  • a overlaps B in plan view means that the area of A orthogonally projected onto the xy plane overlaps the area of B orthogonally projected onto the xy plane.
  • a is located between B and C means that at least one of a plurality of line segments connecting any point in B and any point in C passes through A.
  • a is closer to C than B” means that the shortest distance between A and C is less than the shortest distance between B and C.
  • the passband of a filter is defined as the frequency band between two frequencies that are 3 dB greater than the minimum value of insertion loss within the passband.
  • FIG. 1 is a circuit configuration diagram of a high frequency module 1 and a communication device 4 according to an embodiment.
  • the communication device 4 includes a high frequency module 1, an antenna 5, and an RF signal processing circuit (RFIC) 3.
  • RFIC RF signal processing circuit
  • the high frequency module 1 transmits high frequency signals between the antenna 5 and the RFIC 3 .
  • a detailed circuit configuration of the high frequency module 1 will be described later.
  • the antenna 5 is connected to the antenna connection terminal 100 of the high frequency module 1, transmits a high frequency signal output from the high frequency module 1, and receives a high frequency signal from the outside and outputs it to the high frequency module 1.
  • the RFIC 3 is an example of a signal processing circuit that processes high frequency signals. Specifically, the RFIC 3 performs signal processing such as down-conversion on the received signal input via the receiving path of the high-frequency module 1, and converts the received signal generated by the signal processing into a baseband signal processing circuit (BBIC, not shown). Further, the RFIC 3 performs signal processing such as up-conversion on the transmission signal input from the BBIC, and outputs the transmission signal generated by the signal processing to the transmission path of the high frequency module 1 .
  • the RFIC 3 also has a control section that controls the switches and amplifier elements of the high-frequency module 1 . Some or all of the functions of the RFIC 3 as a control unit may be implemented outside the RFIC 3, for example, in the BBIC or the high frequency module 1. FIG.
  • the RFIC 3 also has a function as a control unit that controls the connection of the switch 70 of the high frequency module 1 based on the band (frequency band) used.
  • the antenna 5 is not an essential component in the communication device 4 according to the present embodiment.
  • the high frequency module 1 includes filters 11, 12, 13, 21 and 22, inductors 30, 31, 32 and 33, a capacitor 35, a switch 70, low noise amplifiers 41, 42 and 43. , 44 and 45 , an antenna connection terminal 100 , and output terminals 110 , 120 , 130 , 140 and 150 .
  • the antenna connection terminal 100 is connected to the antenna 5.
  • the switch 70 is an example of a switch circuit, and has a terminal 70a (first terminal (common terminal)), a terminal 70b (second terminal), a terminal 70c (third terminal), and a terminal 70d. It switches between connection and disconnection with 70b, switches between connection and disconnection between terminals 70a and 70c, and switches between connection and disconnection between terminals 70a and 70d.
  • the switch 70 includes, for example, an SPST (Single Pole Single Throw) switch element 71 having terminals 70a and 70b, an SPST switch element 72 having terminals 70a and 70c, and terminals 70a and 70d. This is a multi-connection type switch circuit composed of SPST type switch elements 73 having .
  • the SPST-type switch element 71 includes a series FET (Field Effect Transistor) arranged in series in a signal path connecting the terminals 70a and 70b, and one end of the series FET and the terminal 70b. and a shunt FET placed between the signal path between and ground.
  • the switch 70 has a control terminal to which a signal from the control unit of the RFIC 3 is input, and the switch 70 includes a control circuit for controlling switching of each SPST type switch element based on the control signal. may be provided.
  • the inductor 30 has one end connected to the terminal 70 b and the other end connected to the input end of the filter 11 and the input end of the filter 12 .
  • the filter 11 is an example of a first acoustic wave filter, has an input end connected to the other end of the inductor 30, and has a first passband including at least part of band A (first band).
  • Filter 11 has one or more elastic wave resonators.
  • the filter 12 is an example of a second acoustic wave filter, has an input end connected to the other end of the inductor 30, and has a second passband including at least part of the band B (second band).
  • Filter 12 has one or more elastic wave resonators.
  • the filter 13 is an example of a third acoustic wave filter, has an input end connected to the terminal 70b without passing through the inductor 30, and has a third passband including at least part of the band C (third band).
  • Filter 13 has one or more elastic wave resonators.
  • the filter 21 is an example of a fourth acoustic wave filter, has an input terminal connected to the terminal 70c without the inductor 30, and has a fourth passband including at least part of the band D (fourth band).
  • Filter 21 has one or more elastic wave resonators.
  • the filter 22 is an example of a fifth acoustic wave filter, has an input terminal connected to the terminal 70d without passing through the inductor 30, and has a fifth passband including at least part of the band E (fifth band).
  • Filter 22 has one or more elastic wave resonators.
  • the first passband and the second passband are located on the lower frequency side than the third passband.
  • the center frequency of the fifth passband is located on the higher frequency side than the center frequency of the fourth passband.
  • band A to band E are used for communication systems built using radio access technology (RAT: Radio Access Technology), such as standardization organizations (eg 3GPP (registered trademark), IEEE (Institute of Electrical and Electronics Engineers ) etc.).
  • RAT Radio Access Technology
  • standardization organizations eg 3GPP (registered trademark), IEEE (Institute of Electrical and Electronics Engineers ) etc.
  • 4G (4th Generation)-LTE (Long Term Evolution) system Long Term Evolution) system
  • WLAN Wireless Local Area Network
  • the capacitor 35 is connected between the other end of the inductor 30 and ground. Note that the capacitor 35 may be connected to one end of the inductor 30 instead of being connected between the other end of the inductor 30 and the ground. Also, the capacitor 35 may have one end connected to the other end of the inductor 30 and the other end connected to the filter 12 .
  • the inductor 31 is connected between the terminal 70c and ground, and the inductor 32 is connected between the terminal 70d and ground.
  • One end of the inductor 33 is connected to the antenna connection terminal 100, and the other end is connected to the terminal 70a.
  • the low noise amplifier 41 has an input terminal connected to the output terminal of the filter 11 and an output terminal connected to the output terminal 110, and amplifies the received band A signal.
  • the low noise amplifier 42 has an input terminal connected to the output terminal of the filter 12 and an output terminal connected to the output terminal 120, and amplifies the received band B signal.
  • the low-noise amplifier 43 has an input terminal connected to the output terminal of the filter 13 and an output terminal connected to the output terminal 130, and amplifies the received band C signal.
  • the low-noise amplifier 44 has an input terminal connected to the output terminal of the filter 21 and an output terminal connected to the output terminal 140, and amplifies the received band D signal.
  • the low noise amplifier 45 has an input terminal connected to the output terminal of the filter 22 and an output terminal connected to the output terminal 150, and amplifies the received band E signal.
  • the high-frequency module 1 can receive a band A signal, a band B signal, a band C signal, a band D signal, and a band E signal at the same time.
  • the terminals 70a and 70b are connected in the switch 70, and the terminals 70a and 70c are connected. Connected. Further, for example, when a signal of band A, a signal of band B, a signal of band C, a signal of band D, and a signal of band E are simultaneously received, the terminal 70a and the terminal 70b are connected in the switch 70, and the terminal The terminals 70a and 70c are connected, and the terminals 70a and 70d are connected. Further, for example, when a signal of band D and a signal of band E are to be received at the same time, the terminals 70a and 70c of the switch 70 are connected, and the terminals 70a and 70d are connected.
  • the high-frequency module 1 does not have to include the filter 22, the low-noise amplifiers 41-45, the capacitor 35, the inductors 31, 32 and 33, and the switch element 73.
  • band A for example, LTE Band 3 (uplink operation band: 1710-1785 MHz, downlink operation band: 1805-1880 MHz), or LTE Band 25 (uplink operation band: 1850-1915 MHz, downlink operation band: 1930-1995 MHz) applies.
  • band B for example, LTE Band 1 (uplink operation band: 1920-1980 MHz, downlink operation band: 2110-2170 MHz), or LTE Band 4 (uplink operation band: 1710-1755 MHz, downlink operation band: 2110-2155 MHz) or Band66 (uplink operating band: 1710-1780 MHz, downlink operating band: 2110-2200 MHz).
  • band C for example, LTE Band 40 (2300-2400 MHz) or LTE Band 30 (uplink operating band: 2305-2315 MHz, downlink operating band: 2350-2360 MHz) is applied.
  • Band 41 (2496-2690 MHz) of LTE is applied as band D, for example.
  • band E for example, Band 7 of LTE (uplink operating band: 2500-2570 MHz, downlink operating band: 2620-2690 MHz) is applied.
  • the uplink operating band means the frequency range designated for the uplink among the above bands.
  • the downlink operating band means the frequency range designated for the downlink among the above bands.
  • the number of filters connected to the other end of the inductor 30 may be three or more. Also, the number of filters connected to the terminal 70b without going through the inductor 30 should be smaller than the number of filters connected to the other end of the inductor 30.
  • the antenna connection terminal 100 and the output terminals 110, 120, 130, 140 and 150 may not be included in the high frequency module 1.
  • FIG. 2A is a diagram showing a first example of the circuit configuration of the elastic wave filter according to the embodiment.
  • FIG. 2B is a diagram showing a second example of the circuit configuration of the elastic wave filter according to the embodiment.
  • Each of filters 11, 12, 13, 21 and 22 according to the present embodiment has, for example, the circuit configuration of elastic wave filter 10A shown in FIG. 2A or elastic wave filter 10B shown in FIG. 2B. .
  • the acoustic wave filter 10A shown in FIG. 2A includes series arm resonators 101 to 105, parallel arm resonators 151 to 154, and an inductor 161.
  • the series arm resonators 101 to 105 are arranged on a series arm path connecting the input/output terminals 10a and 10b.
  • Each of the parallel arm resonators 151-154 is connected between each connection point of the series arm resonators 101-105 and the ground.
  • the acoustic wave filter 10A constitutes a ladder-type bandpass filter.
  • Inductor 161 is connected between the connection point of parallel arm resonators 151, 152 and 153 and the ground, and adjusts the attenuation pole in the filter pass characteristics.
  • the number of series arm resonators and parallel arm resonators is arbitrary, and inductor 161 may be omitted.
  • the elastic wave filter 10B shown in FIG. 2B includes a longitudinal coupling filter section 203, series arm resonators 201 and 202, and parallel arm resonators 251 and 253.
  • the longitudinal coupling filter unit 203 has, for example, nine IDTs, each of which is composed of a pair of IDT electrodes facing each other.
  • Series arm resonators 201 and 202 and parallel arm resonator 251 constitute a ladder filter section.
  • the acoustic wave filter 10B constitutes a bandpass filter.
  • the number of series arm resonators and parallel arm resonators and the number of IDTs constituting longitudinally coupled filter section 203 are arbitrary.
  • FIG. 3A is a plan view and a cross-sectional view schematically showing a first example of an elastic wave resonator included in the elastic wave filter according to the embodiment.
  • the figure illustrates the basic structure of elastic wave resonators forming the filters 11, 12, 13, 21 and 22.
  • the elastic wave resonator 60 shown in FIG. 3A is for explaining a typical structure of an elastic wave resonator, and the number and length of the electrode fingers constituting the electrodes are Not limited.
  • the elastic wave resonator 60 is composed of a piezoelectric substrate 50 and comb electrodes 60a and 60b.
  • a pair of comb electrodes 60a and 60b facing each other are formed on the substrate 50.
  • the comb-shaped electrode 60a is composed of a plurality of parallel electrode fingers 61a and busbar electrodes 62a connecting the plurality of electrode fingers 61a.
  • the comb-shaped electrode 60b is composed of a plurality of parallel electrode fingers 61b and a busbar electrode 62b connecting the plurality of electrode fingers 61b.
  • the plurality of electrode fingers 61a and 61b are formed along a direction orthogonal to the elastic wave propagation direction (X-axis direction).
  • the IDT electrode 54 which is composed of a plurality of electrode fingers 61a and 61b and busbar electrodes 62a and 62b, has a laminated structure of an adhesion layer 540 and a main electrode layer 542, as shown in (b) of FIG. 3A. It's becoming
  • the adhesion layer 540 is a layer for improving adhesion between the substrate 50 and the main electrode layer 542, and is made of Ti, for example.
  • the material of the main electrode layer 542 is, for example, Al containing 1% Cu.
  • Protective layer 55 is formed to cover comb electrodes 60a and 60b.
  • the protective layer 55 is a layer for the purpose of protecting the main electrode layer 542 from the external environment, adjusting frequency temperature characteristics, and increasing moisture resistance. is.
  • the materials forming the adhesion layer 540, the main electrode layer 542 and the protective layer 55 are not limited to the materials described above.
  • the IDT electrode 54 may not have the laminated structure described above.
  • the IDT electrode 54 may be composed of, for example, metals or alloys such as Ti, Al, Cu, Pt, Au, Ag, and Pd, and may be composed of a plurality of laminates composed of the above metals or alloys. may Also, the protective layer 55 may not be formed.
  • the substrate 50 includes a high acoustic velocity supporting substrate 51, a low acoustic velocity film 52, and a piezoelectric film 53.
  • the high acoustic velocity supporting substrate 51, the low acoustic velocity film 52, and the piezoelectric film 53 are It has a structure laminated in this order.
  • the piezoelectric film 53 is, for example, a ⁇ ° Y-cut X-propagation LiTaO 3 piezoelectric single crystal or a piezoelectric ceramic (lithium tantalate single crystal cut along a plane normal to an axis rotated ⁇ ° from the Y axis with the X axis as the central axis, (or ceramics, single crystal or ceramics in which surface acoustic waves propagate in the X-axis direction). Note that the material of the piezoelectric single crystal used as the piezoelectric film 53 and the cut angle ⁇ are appropriately selected according to the required specifications of each filter.
  • the high acoustic velocity support substrate 51 is a substrate that supports the low acoustic velocity film 52 , the piezoelectric film 53 and the IDT electrodes 54 .
  • the high acoustic velocity support substrate 51 is a substrate in which the acoustic velocity of bulk waves in the high acoustic velocity support substrate 51 is faster than acoustic waves such as surface waves and boundary waves propagating through the piezoelectric film 53, and surface acoustic waves are generated. It functions so that it is confined in the portion where the piezoelectric film 53 and the low sound velocity film 52 are laminated and does not leak below the high sound velocity support substrate 51 .
  • the high acoustic velocity support substrate 51 is, for example, a silicon substrate.
  • the low sound velocity film 52 is a film in which the sound velocity of the bulk wave in the low sound velocity film 52 is lower than that of the bulk wave propagating through the piezoelectric film 53 , and is arranged between the piezoelectric film 53 and the high sound velocity support substrate 51 . be.
  • This structure and the nature of the elastic wave to concentrate its energy in a low-temperature medium suppresses leakage of the surface acoustic wave energy to the outside of the IDT electrode.
  • the low-temperature velocity film 52 is, for example, a film whose main component is silicon dioxide.
  • the laminated structure of the substrate 50 it is possible to significantly increase the Q value at the resonance frequency and anti-resonance frequency compared to the conventional structure using a single layer piezoelectric substrate. That is, since an acoustic wave resonator with a high Q value can be configured, it is possible to configure a filter with a small insertion loss using the acoustic wave resonator.
  • the high acoustic velocity support substrate 51 has a structure in which a support substrate and a high acoustic velocity film having a higher acoustic velocity than elastic waves such as surface waves and boundary waves propagating through the piezoelectric film 53 are laminated.
  • the support substrate includes piezoelectric materials such as sapphire, lithium tantalate, lithium niobate, and quartz, alumina, magnesia, silicon nitride, aluminum nitride, silicon carbide, zirconia, cordierite, mullite, steatite, and fort.
  • the high acoustic velocity film includes aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon oxynitride, DLC film, diamond, media containing these materials as main components, and media containing mixtures of these materials as main components. etc., various high acoustic velocity materials can be used.
  • FIG. 3B is a cross-sectional view schematically showing a second example of elastic wave resonators forming filters 11, 12, 13, 21 and 22 according to the embodiment.
  • the elastic wave resonator 60 shown in FIG. 3A shows an example in which the IDT electrodes 54 are formed on the substrate 50 having the piezoelectric film 53.
  • the substrate on which the IDT electrodes 54 are formed is shown in FIG. 3B.
  • the piezoelectric single crystal substrate 57 may be a single piezoelectric layer.
  • the piezoelectric single crystal substrate 57 is composed of, for example, a piezoelectric single crystal of LiNbO 3 .
  • the acoustic wave resonator according to this example is composed of a piezoelectric single crystal substrate 57 of LiNbO 3 , an IDT electrode 54 , and a protective layer 58 formed on the piezoelectric single crystal substrate 57 and the IDT electrode 54 . .
  • the piezoelectric film 53 and the piezoelectric single crystal substrate 57 described above may be appropriately changed in laminated structure, material, cut angle, and thickness according to the required transmission characteristics of the elastic wave filter device. Even an elastic wave resonator using a LiTaO 3 piezoelectric substrate having a cut angle other than the cut angle described above can produce the same effects as the elastic wave resonator 60 using the piezoelectric film 53 described above.
  • the substrate on which the IDT electrodes 54 are formed may have a structure in which a supporting substrate, an energy trapping layer, and a piezoelectric film are laminated in this order.
  • An IDT electrode 54 is formed on the piezoelectric film.
  • the piezoelectric film is, for example, LiTaO 3 piezoelectric single crystal or piezoelectric ceramics.
  • the support substrate is the substrate that supports the piezoelectric film, the energy confinement layer, and the IDT electrodes 54 .
  • the energy confinement layer consists of one or more layers, and the velocity of the bulk acoustic wave propagating through at least one layer is greater than the velocity of the elastic wave propagating near the piezoelectric film.
  • the energy trapping layer may have a laminated structure of a low acoustic velocity layer and a high acoustic velocity layer.
  • the sound velocity layer is a film in which the sound velocity of bulk waves in the sound velocity layer is lower than the sound velocity of elastic waves propagating through the piezoelectric film.
  • the high acoustic velocity layer is a film in which the acoustic velocity of bulk waves in the high acoustic velocity layer is higher than the acoustic velocity of elastic waves propagating through the piezoelectric film.
  • the support substrate may be a high acoustic velocity layer.
  • the energy trapping layer may be an acoustic impedance layer having a configuration in which a low acoustic impedance layer with a relatively low acoustic impedance and a high acoustic impedance layer with a relatively high acoustic impedance are alternately laminated. .
  • the wavelength of the elastic wave resonator is defined by the wavelength ⁇ which is the repetition period of the plurality of electrode fingers 61a or 61b forming the IDT electrode 54 shown in (b) of FIG. 3A.
  • the electrode finger pitch is 1/2 of the wavelength ⁇
  • the line width of the electrode fingers 61a and 61b constituting the comb-shaped electrodes 60a and 60b is W
  • the distance between the adjacent electrode fingers 61a and 61b is When the space width is S, it is defined as (W+S).
  • S space width
  • the intersecting width L of the pair of comb-shaped electrodes 60a and 60b is the overlap of the electrode fingers 61a and 61b when viewed from the elastic wave propagation direction (X-axis direction). is the length of the electrode finger that
  • the electrode duty of each acoustic wave resonator is the line width occupation ratio of the plurality of electrode fingers 61a and 61b, and is the ratio of the line width to the sum of the line width and space width of the plurality of electrode fingers 61a and 61b. and is defined as W/(W+S).
  • the height of the comb electrodes 60a and 60b is h.
  • electrode parameters related to the shape of the IDT electrodes of the acoustic wave resonator such as the wavelength ⁇ , the electrode finger pitch, the crossing width L, the electrode duty, and the height h of the IDT electrodes 54, are defined as electrode parameters.
  • the electrode finger pitch of the IDT electrodes 54 is defined by the average electrode finger pitch of the IDT electrodes 54 .
  • the average electrode finger pitch of the IDT electrode 54 is defined by the total number of the electrode fingers 61a and 61b included in the IDT electrode 54 being Ni, and the electrode finger positioned at one end of the IDT electrode 54 in the elastic wave propagation direction and It is defined as Di/(Ni-1), where Di is the center-to-center distance from the positioned electrode finger.
  • the resonance frequency and antiresonance frequency of the surface acoustic wave resonator shift to the lower frequency side as the electrode finger pitch of the IDT electrode increases. shift.
  • FIG. 3C is a cross-sectional view schematically showing a third example of elastic wave resonators forming filters 11, 12, 13, 21 and 22 according to the embodiment.
  • Bulk acoustic wave resonators are shown as acoustic wave resonators of filters 11, 12, 13, 21 and 22 in FIG. 3C.
  • the bulk acoustic wave resonator has, for example, a support substrate 65, a lower electrode 66, a piezoelectric layer 67, and an upper electrode 68. , a piezoelectric layer 67, and an upper electrode 68 are laminated in this order.
  • the support substrate 65 is a substrate for supporting the lower electrode 66, the piezoelectric layer 67, and the upper electrode 68, and is, for example, a silicon substrate.
  • the support substrate 65 is provided with a cavity in a region in contact with the lower electrode 66 . This allows the piezoelectric layer 67 to vibrate freely.
  • the lower electrode 66 is an example of a first electrode and is formed on one surface of the support substrate 65 .
  • the upper electrode 68 is an example of a second electrode and is formed on one surface of the support substrate 65 .
  • the lower electrode 66 and the upper electrode 68 are made of Al containing 1% Cu, for example.
  • the piezoelectric layer 67 is formed between the lower electrode 66 and the upper electrode 68 .
  • the piezoelectric layer 67 is made of, for example, ZnO (zinc oxide), AlN (aluminum nitride), PZT (lead zirconate titanate), KN (potassium niobate), LN (lithium niobate), LT (lithium tantalate),
  • the main component is at least one of quartz and LiBO (lithium borate).
  • the bulk acoustic wave resonator having the above laminated structure induces a bulk acoustic wave in the piezoelectric layer 67 by applying electrical energy between the lower electrode 66 and the upper electrode 68 to generate resonance. It is.
  • a bulk acoustic wave generated by this bulk acoustic wave resonator propagates between the lower electrode 66 and the upper electrode 68 in a direction perpendicular to the film surface of the piezoelectric layer 67 . That is, the bulk acoustic wave resonator is a resonator that utilizes bulk acoustic waves.
  • the resonance frequency and anti-resonance frequency of the bulk acoustic wave resonator shift to the low frequency side.
  • each of the filters 11, 12 and 13 is composed of one or more surface acoustic wave resonators having the IDT electrodes 54, and each of the filters 11, 12 and 13 A series arm resonator arranged on a series arm path connecting the input end and the output end may be included.
  • a series arm resonator arranged on a series arm path connecting the input end and the output end may be included.
  • the electrode finger pitch of the IDT electrodes 54 forming the series arm resonators included in the filters 11 and 12 is larger than the electrode finger pitch of the IDT electrodes 54 forming the series arm resonators included in the filter 13, good.
  • the passbands of filters 11 and 12 connected to the other end of inductor 30 are located on the lower frequency side than the passband of filter 13 .
  • each of the filters 11, 12 and 13 includes a support substrate 65, lower electrodes 66 and 68 formed on one surface of the support substrate 65, and lower electrodes 66 and 68 formed on one surface of the support substrate 65. 66 and a piezoelectric layer 67 formed between the upper electrode 68.
  • Each of the filters 11, 12 and 13 connects an input end and an output end.
  • a series arm resonator arranged on the series arm path may be included.
  • the piezoelectric layers 67 forming the series arm resonators included in the filters 11 and 12 may be thicker than the piezoelectric layers 67 forming the series arm resonators included in the filter 13 .
  • the passbands of filters 11 and 12 connected to the other end of inductor 30 are located on the lower frequency side than the passband of filter 13 .
  • FIG. 4 is a circuit configuration diagram of a high frequency module 500 according to a comparative example.
  • high frequency module 500 includes filters 11, 12, 13, 21 and 22, inductors 30, 31, 32 and 33, switch 70, low noise amplifiers 41, 42, 43, 44 and 45 , an antenna connection terminal 100 , and output terminals 110 , 120 , 130 , 140 and 150 .
  • a high frequency module 500 according to the comparative example differs from the high frequency module 1 according to the embodiment mainly in the connection configuration between the filters 11 , 12 and 13 and the inductor 30 .
  • the description of the same configuration as that of the high-frequency module 1 according to the embodiment will be omitted, and the description will focus on the different configuration.
  • the inductor 30 has one end connected to the terminal 70 b and the other end connected to the input end of the filter 11 .
  • the filter 11 has an input end connected to the other end of the inductor 30 and has a first passband including at least part of band A (first band).
  • Filter 11 has one or more elastic wave resonators.
  • the filter 12 has an input end connected to the terminal 70b without passing through the inductor 30, and has a second passband including at least part of the band B (second band).
  • Filter 12 has one or more elastic wave resonators.
  • the filter 13 has an input end connected to the terminal 70b without passing through the inductor 30, and has a third passband including at least part of the band C (third band).
  • Filter 13 has one or more elastic wave resonators.
  • the filter 21 has an input end connected to the terminal 70c without passing through the inductor 30, and has a fourth passband including at least part of the band D (fourth band).
  • Filter 21 has one or more elastic wave resonators.
  • the filter 22 has an input end connected to the terminal 70d without passing through the inductor 30, and has a fifth passband including at least part of the band E (fifth band).
  • Filter 22 has one or more elastic wave resonators.
  • the filters 11 and 12 are connected to the terminal 70b via the inductor 30, and the filter 13 is connected to the terminal 70b without the inductor 30.
  • the filter 11 is connected to the terminal 70b via the inductor 30, and the filters 12 and 13 are connected to the terminal 70b without the inductor 30.
  • the relationship between the frequencies of the first passband, the second passband, and the third passband and the relationship between the frequencies of the fourth passband and the fifth passband are not limited.
  • the high-frequency module 500 can receive a band A signal, a band B signal, a band C signal, a band D signal, and a band E signal at the same time.
  • FIG. 5A is a Smith chart showing impedance characteristics of each filter according to the embodiment.
  • the impedance in the band D when the filters 11, 12 and 13 are viewed from the terminal 70b side of the high frequency module 1 is shown on the Smith chart.
  • FIG. 5B is a Smith chart showing the impedance characteristics of each filter according to the comparative example.
  • the impedance in the band D when the filters 11, 12 and 13 are viewed from the terminal 70b side of the high frequency module 500 is shown on the Smith chart.
  • the impedance in band E when the filters 11, 12 and 13 are viewed from the terminal 70b side is also the impedance of the filters 11, 12 and 13 from the terminal 70b side shown in FIGS. 5A and 5B. It exhibits characteristics similar to the impedance in band D when viewed.
  • the passband of another filter not the passband (own band) of the filter itself, will be referred to as the other band.
  • the own band of filter 11 is band A
  • the partner bands of filter 11 are band B, band C, band D and band E.
  • the filters 12 and 13 are commonly connected to the terminal 70b without the inductor 30 interposed. Since filters 12 and 13 are acoustic wave filters, the impedance of each unit exhibits capacitiveness. On the other hand, the combined impedance seen from the terminal 70b of the filters 12 and 13 commonly connected to the terminal 70b has an even larger capacitance value.
  • the impedance in the other band (for example, band D) is For example, compared to the impedance in band D), it is located in the capacitive region farther from the open point (a in FIG. 5B). As a result, signals in the other band (for example, band D) are likely to leak to the filters 12 and 13, increasing the insertion loss of the filter (filter 21) having the other band as the passband.
  • the impedance (b in FIG. 5B) in the other band (for example, band D) when the filter 11 alone is viewed from the terminal 70b is induced clockwise. (c in FIG. 5B).
  • the capacitive impedance (a in FIG. 5B) in the other band (for example, band D) and the filter 11 to which the inductor 30 is connected in series When viewing the filters 11, 12 and 13 from the terminal 70b, the inductive impedance (c in FIG.
  • the impedance in the other band (for example, band D) when viewed from the terminal 70b is a complex conjugate relationship. It is possible to place the impedance in the counterpart band (eg, band D) in the open region. However, when the filters 12 and 13 commonly connected to the terminal 70b are viewed from the terminal 70b, the capacitiveness of the impedance in the partner band (for example, band D) is large. It is difficult to position the impedance (d in FIG. 5B) in the opposite band (for example, band D) in the open region with high accuracy.
  • the inductance value of the inductor 30 is reduced, and the partner band (for example, band D) when the filter 11 in which the inductor 30 is connected in series is viewed from the terminal 70b It is conceivable to adjust the amount of impedance shift in .
  • the impedance approaches a short circuit from an open circuit, so that the signal in the other band (for example, band D) is likely to leak to the filter 11, and the insertion loss of the filter (21) having the other band as the passband increases. increase.
  • the filter 13 is commonly connected to the terminal 70b without the inductor 30 interposed. Since the filter 13 is an acoustic wave filter, the impedance of a single unit exhibits capacitiveness.
  • the impedance in the other band for example, band D
  • band D the impedance in the other band
  • the impedance in the other band for example, band D
  • the impedance in the other band is It is located in a capacitive region close to the open point (a in FIG. 5A) compared to the impedance (a in FIG. 5B) in (eg band D). Therefore, it is possible to suppress the signal of the other band (for example, band D) from leaking to the filter 13, so that the insertion loss of the filter (filter 21) having the passband of the other band can be reduced.
  • the impedance in the other band (for example, band D) when the commonly connected filters 11 and 12 are viewed from the terminal 70b is (Fig. 5A b) is shifted clockwise into the inducible region (Fig. 5A c).
  • the capacitive impedance (a in FIG. 5A) in the other band (for example, band D) and the filters 11 and 12 to which the inductor 30 is connected in series is shifted clockwise into the inducible region (Fig. 5A c).
  • the impedance in the other band (for example, band D) when viewed from the terminal 70b can have a complex conjugate relationship with high precision.
  • the other band (for example, band D) and the impedance when the filter 13 alone is seen from the terminal 70b in a state in which the terminals 70a and 70b are disconnected and the inductor 30 and the filters 11 and 12 are not connected to the terminal 70b.
  • the impedance in the other band (for example, band D) satisfies a complex conjugate relationship. As a result, the impedance (d in FIG.
  • the impedance of the commonly connected filters 11 and 12 is in the capacitive region, and is located close to the open to short, so the inductance value of the inductor 30 for shifting the impedance to the inductive region can be reduced. . Therefore, the transmission loss of filters 11 and 12 due to inductor 30 can be reduced.
  • the band A and the band B are located on the lower frequency side than the band C. That is, the passbands of filters 11 and 12 to which inductor 30 is connected in series are located on the lower frequency side than the passband of filter 13 to which inductor 30 is not connected. Since the inductor 30 connected to the filters 11 and 12 functions as a low-pass filter, the passbands of the filters 11 and 12 are separated from the cutoff frequency of the low-pass filter formed by the inductor 30 to the lower frequency side. preferably.
  • the passbands of filters 11 and 12 are positioned on the lower frequency side than the passband of filter 13
  • the passbands of filters 11 and 12 are positioned on the lower frequency side than the cutoff frequency. Because of the position, an increase in insertion loss of filters 11 and 12 can be suppressed.
  • the capacitor 35 By adding the capacitor 35, the low-pass filter function formed by the inductor 30 is enhanced, and the increase in the insertion loss of the filters 11 and 12 can be further suppressed.
  • FIG. 6 is a circuit configuration diagram of a high frequency module 2 according to a modification.
  • the high frequency module 2 according to this modification includes filters 11, 12, 13, 14, 21 and 22, inductors 31, 32, 33 and 34, a switch 70, a low noise amplifier 41, 42 , 43 , 44 , 45 and 46 , an antenna connection terminal 100 , and output terminals 110 , 120 , 130 , 140 , 150 and 160 .
  • a high-frequency module 2 according to this modification differs from the high-frequency module 1 according to the embodiment mainly in that a filter 14 and a low-noise amplifier 46 are added.
  • a filter 14 and a low-noise amplifier 46 are added.
  • the description of the same configuration as that of the high-frequency module 1 according to the embodiment will be omitted, and the description will focus on the different configuration.
  • the inductor 34 has one end connected to the terminal 70b and the other end connected to the input end of the filter 11, the input end of the filter 12, and the input end of the filter 14.
  • the filter 11 is an example of a first acoustic wave filter, has an input end connected to the other end of the inductor 34, and has a first passband including at least part of band A (first band).
  • Filter 11 has one or more elastic wave resonators.
  • the filter 12 is an example of a second acoustic wave filter, has an input end connected to the other end of the inductor 34, and has a second passband including at least part of the band B (second band).
  • Filter 12 has one or more elastic wave resonators.
  • the filter 14 is an example of a sixth acoustic wave filter, has an input end connected to the other end of the inductor 34, and has a sixth passband including at least part of the band F (sixth band).
  • Filter 14 has one or more elastic wave resonators.
  • the filter 13 is an example of a third acoustic wave filter, has an input end connected to the terminal 70b without passing through the inductor 34, and has a third passband including at least part of the band C (third band).
  • Filter 13 has one or more elastic wave resonators.
  • the filter 21 is an example of a fourth acoustic wave filter, has an input terminal connected to the terminal 70c without the inductor 34, and has a fourth passband including at least part of the band D (fourth band).
  • Filter 21 has one or more elastic wave resonators.
  • the filter 22 is an example of a fifth acoustic wave filter, has an input terminal connected to the terminal 70d without the inductor 34, and has a fifth passband including at least part of the band E (fifth band). Filter 22 has one or more elastic wave resonators.
  • the first passband, the second passband and the sixth passband are located on the lower frequency side than the third passband.
  • the capacitor 35 is connected between the other end of the inductor 34 and the ground.
  • the low-noise amplifier 46 has an input terminal connected to the output terminal of the filter 14 and an output terminal connected to the output terminal 160, and amplifies the received band F signal.
  • the high-frequency module 2 can simultaneously receive a signal of band A, a signal of band B, a signal of band C, a signal of band D, a signal of band E, and a signal of band F. .
  • the terminal 70a and the terminal 70b are connected in the switch 70, and the terminal 70a and the terminal 70c are connected.
  • the state of impedance matching at the time of simultaneous reception can be improved. Characteristics such as return loss of received signals can be improved.
  • this capacitor may be formed integrally with an FET or the like inside the switch 70 . With such a configuration, the high-frequency module 2 can be miniaturized. In that case, a capacitor may be placed between the series FET and the shunt FET in the signal path.
  • the capacitor 35 may not be arranged in series with the filter 12, and the high-frequency module 2 includes the filter 22, the low noise amplifiers 41 to 46, the capacitor 35, the inductor 31, 32 and 33 and switch element 73 may be omitted.
  • FIG. 7 is a Smith chart showing the impedance characteristics of each filter according to the modification.
  • the impedance in the band D when the filters 11, 12 and 13 are viewed from the terminal 70b side of the high frequency module 2 is shown on the Smith chart.
  • the filter 13 is commonly connected to the terminal 70b without the inductor 34 interposed therebetween. Since the filter 13 is an acoustic wave filter, the impedance of a single unit exhibits capacitiveness.
  • the impedance in the other band for example, band D
  • the impedance in the other band for example, band D
  • the common-connected filters 11, 12, and 14 are connected in series with the inductor 34, so that the common-connected filters 11, 12, and 14 are in the opposite band (for example, band D) (Fig. 7b) is shifted clockwise into the inductive region (Fig. 7c).
  • the capacitive impedance (a in FIG. 7) in the other band (for example, band D) and the filters 11 and 12 to which the inductor 34 is connected in series , and 14 with the inductive impedance (c in FIG. 7) in the other band (for example, band D) when viewed from the terminal 70b can have a complex conjugate relationship with high precision.
  • the filter 13 when the terminals 70a and 70b are unconnected and the filter 13 is not connected to one end of the inductor 34, when the filters 11, 12 and 14 are viewed from the terminal 70b, For example, in a state where the impedance in band D), the terminals 70a and 70b are disconnected, and the inductor 34 and the filters 11, 12 and 14 are not connected to the terminal 70b, the filter 13 alone is removed from the terminal 70b.
  • the impedance in the other band for example, band D
  • the impedance (d in FIG.
  • band A, band B, and band F are located on the lower frequency side than band C. That is, the passbands of filters 11, 12 and 14 to which inductor 34 is connected in series are located on the lower frequency side than the passband of filter 13 to which inductor 34 is not connected. Since inductor 34 connected to filters 11, 12 and 14 functions as a low-pass filter, the passbands of filters 11, 12 and 14 are lower than the cutoff frequency of the low-pass filter formed by inductor 34. It is preferable to keep them away from each other.
  • the passbands of filters 11, 12 and 14 are located on the lower frequency side than the passband of filter 13, the passbands of filters 11, 12 and 14 are lower than the cutoff frequency. Since it is located on the low frequency side, an increase in insertion loss of filters 11, 12 and 14 can be suppressed.
  • FIG. 8 A mounting configuration of the high-frequency module 1 according to the present embodiment will be described with reference to FIGS. 8 and 9.
  • FIG. 8 A mounting configuration of the high-frequency module 1 according to the present embodiment will be described with reference to FIGS. 8 and 9.
  • FIG. 8 is a plan view of the high frequency module 1 according to the embodiment.
  • FIG. 9 is a cross-sectional view of the high-frequency module 1 according to the embodiment.
  • 8A is a view of the main surface 90a side of the module substrate 90 viewed from the z-axis positive side
  • FIG. 8B is a view of the main surface 90b side of the module substrate 90 viewed from the z-axis positive side. It is a perspective view.
  • the cross section of the high frequency module 1 in FIG. 9 is taken along line IX-IX in (a) and (b) of FIG.
  • each part may have a symbol representing it so that the arrangement relationship of each part can be easily understood.
  • not 8 and 9 omit the illustration of wiring that connects a plurality of electronic components arranged on the module substrate 90.
  • the high-frequency module 1 includes a module substrate 90, resin members 91 and 92, external connection terminals 95, and a shield electrode layer 96, in addition to the plurality of electronic components included in the high-frequency module 1 shown in FIG. Prepare.
  • the module substrate 90 has main surfaces 90a and 90b facing each other. Principal surfaces 90a and 90b are examples of a first principal surface and a second principal surface, respectively. Note that in FIG. 8, the module substrate 90 has a rectangular shape in plan view, but is not limited to this shape.
  • LTCC low temperature co-fired ceramics
  • HTCC high temperature co-fired ceramics
  • a component-embedded substrate, a substrate having a redistribution layer (RDL), a printed substrate, or the like can be used, but is not limited to these.
  • the resin member 91 is arranged on the main surface 90a, covers a part of the plurality of circuit components and the main surface 90a, and provides reliability such as mechanical strength and moisture resistance of the plurality of circuit components. It has a function to ensure The resin member 91 is arranged on the main surface 90b, covers part of the circuit component and the main surface 90b, and has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit component.
  • the plurality of external connection terminals 95 are arranged on the main surface 90b.
  • the high-frequency module 1 exchanges electric signals with an external substrate arranged on the z-axis negative direction side of the high-frequency module 1 via a plurality of external connection terminals 95 . Also, some of the plurality of external connection terminals 95 are set to the ground potential of the external substrate.
  • the high frequency module 1 may further include a shield electrode layer 96 that covers the surface and side surfaces of the resin member 91 and the side surface of the resin member 92 and that is set to the ground potential. This improves the electromagnetic field shielding function of the high-frequency module 1 from external circuits.
  • the resin members 91 and 92, the external connection terminals 95, and the shield electrode layer 96 are not essential components of the high frequency module according to the present invention.
  • the filters 11, 12, 13, 21 and 22 and the inductor 30 are arranged on the main surface 90a.
  • Filters 11 and 12 are configured by being integrated on chip part 81 .
  • the filter 13 is composed of chip parts 82 .
  • Filters 21 and 22 are integrated on chip component 83 .
  • Each of the chip components 81, 82 and 83 is constructed using, for example, a Si substrate or a piezoelectric substrate.
  • Each of the filters 11, 12, 13, 21 and 22 may not be included in any one of the chip components 81 to 83, and may be arranged alone on the main surface 90a.
  • a semiconductor IC 80 is arranged on the main surface 90b.
  • Semiconductor IC 80 includes a switch region 80a in which switch 70 (switch elements 71-73) is formed, and an amplification region 80b in which low-noise amplifiers 41-45 are formed.
  • the semiconductor IC 80 is configured using CMOS, for example, and is specifically manufactured by an SOI (Silicon On Insulator) process.
  • the semiconductor IC 80 may be composed of at least one of GaAs, SiGe, and GaN, but the semiconductor material that constitutes the semiconductor IC 80 is not limited to the materials described above.
  • the semiconductor IC 80 may have at least the switch region 80a, and the amplification region 80b may be included in a semiconductor IC different from the semiconductor IC 80.
  • the inductors 31 to 33 are not shown in FIG. 8, they may be arranged on the main surfaces 90a, 90b and inside the module substrate 90.
  • the circuit components constituting the high-frequency module 1 are arranged separately on the main surfaces 90a and 90b, so that the high-frequency module 1 can be miniaturized.
  • the capacitor 35 is composed of a planar conductor formed on at least one of the surface and inside of the module substrate 90 .
  • the capacitor 35 is composed of planar conductors formed in the first layer arranged on the main surface 90a of the module substrate 90, the second layer arranged inside the module substrate 90, and the third layer.
  • the planar conductors formed on the first layer may be ground electrodes of the filters 11 and 12 .
  • the capacitor 35 is arranged inside the module substrate 90, so that the high frequency module 1 can be made more compact.
  • the inductor 30 and the semiconductor IC 80 at least partially overlap each other, and the filter 21 and the semiconductor IC 80 at least partially overlap each other.
  • the wiring connecting the inductor 30 and the switch 70 and the wiring connecting the filter 21 and the switch 70 can be shortened, so that the transmission loss of the two wirings can be reduced. Therefore, the loss of the high frequency module 1 can be reduced.
  • the module substrate 90 when the module substrate 90 is viewed from above, it is desirable that at least a portion of the inductor 30 and the switch region 80a overlap.
  • the wiring connecting the inductor 30 and the switch 70 can be made shorter, so that the transmission loss of the wiring can be further reduced.
  • the module substrate 90 when the module substrate 90 is viewed in plan, at least one of the filters 11 and 12 and the capacitor 35 overlap at least partially.
  • the wiring connecting at least one of the filters 11 and 12 and the capacitor 35 can be shortened, the transmission loss of the wiring can be reduced.
  • the filter 22 is arranged closer to the semiconductor IC 80 than the filter 21 is. Furthermore, when viewed from above, it is desirable that the filter 22 be arranged closer to the switch region 80a than the filter 21 is.
  • the passband of the filter 22 is located on the higher frequency side than the passband of the filter 21. Therefore, the filter 22 is more affected than the filter 21 by the phase change due to the wiring length connecting the switch 70 and the filter.
  • the other band for example, band E
  • the other band can be positioned in the open region with higher accuracy. As a result, it is possible to suppress the leakage of the signals of the other band to the filters 11, 12 and 13, so that the insertion loss of the filter 22 having the passband of the other band can be reduced.
  • the high-frequency module 1 can simultaneously transmit a signal of the band A, a signal of the band B, a signal of the band C and a signal of the band D, and the terminals 70a, 70b and 70c a switch 70 that switches connection and disconnection between the terminals 70a and 70b and switches connection and disconnection between the terminals 70a and 70c; an inductor 30 having one end connected to the terminal 70b; A filter 11 connected to the other end and having a first passband including at least part of band A, and a filter 12 connected to the other end of inductor 30 and having a second passband including at least part of band B.
  • a filter 13 connected to terminal 70b without inductor 30 and having a third passband including at least part of band C, and a filter 13 connected to terminal 70c without inductor 30 and including at least part of band D. and a filter 21 having a fourth passband comprising the first passband and the second passband located on the lower frequency side than the third passband.
  • the filter 13 is commonly connected to the terminal 70b without the inductor 30 interposed. Since the filter 13 is an acoustic wave filter, the impedance of a single unit exhibits capacitiveness.
  • the impedance in the other band (for example, band D) is the same as the impedance in the other band (for example, band D) when the filters 12 and 13 directly connected to the terminal 70b are viewed from the terminal 70b. It lies in the capacitive region close to the open point compared to the impedance in eg band D). Therefore, it is possible to suppress the signal of the other band (for example, band D) from leaking to the filter 13, so that the insertion loss of the filter (filter 21) having the passband of the other band can be reduced.
  • the impedance in the other band (for example, band D) when the commonly connected filters 11 and 12 are viewed from the terminal 70b is is shifted clockwise to the inducible region.
  • the capacitive impedance in the other band (for example, band D) when the filter 13 alone connected to the terminal 70b is viewed from the terminal 70b, and the filters 11 and 12 to which the inductor 30 is connected in series are viewed from the terminal 70b.
  • the inductive impedance in the other band (for example, band D) in the case can be made into a complex conjugate relationship with high accuracy.
  • the impedance in the other band (for example, band D) when the filters 11, 12 and 13 are viewed from the terminal 70b can be positioned in the open region with higher accuracy.
  • the passbands of filters 11 and 12 are located on the lower frequency side than the passband of filter 13, the passbands of filters 11 and 12 are lower than the cutoff frequency of the low-pass filter composed of inductor 30. Since it is positioned on the lower frequency side, an increase in insertion loss of filters 11 and 12 can be suppressed.
  • the terminals 70a and 70b when simultaneously transmitting a signal of band A, a signal of band B, a signal of band C and a signal of band D, the terminals 70a and 70b are connected, and the terminals 70a and 70c are connected. may be connected.
  • the filters 11 and 12 are viewed from the terminal 70b.
  • Impedance in the fourth passband a state in which the terminals 70a and 70b are disconnected, and a state in which the inductor 30 and the filters 11 and 12 are not connected to the terminal 70b, as viewed from the terminal 70b
  • the impedance in the fourth passband in the case may satisfy a complex conjugate relationship.
  • the high-frequency module 1 further includes a module substrate 90 having main surfaces 90a and 90b facing each other, filters 11, 12, 13, 21 and inductor 30 are arranged on main surface 90a, and switch 70 may be included in the semiconductor IC 80 arranged on the main surface 90b.
  • the high frequency module 1 since the circuit components constituting the high frequency module 1 are arranged separately on the main surfaces 90a and 90b, the high frequency module 1 can be miniaturized.
  • the inductor 30 and the semiconductor IC 80 may at least partially overlap, and the filter 21 and the semiconductor IC 80 may at least partially overlap.
  • the wiring connecting the inductor 30 and the switch 70 and the wiring connecting the filter 21 and the switch 70 can be shortened, so that the transmission loss of the two wirings can be reduced. Therefore, the loss of the high frequency module 1 can be reduced.
  • the high-frequency module 1 further includes an amplifier connected to at least one of the filters 11, 12, 13 and 21, and the semiconductor IC 80 includes a switch region 80a formed with a switch 70 and an amplifier formed with an amplifier.
  • the inductor 30 and the switch region 80a may at least partially overlap each other, and the filter 21 and the switch region 80a may at least partially overlap each other. .
  • the wiring connecting the inductor 30 and the switch 70 and the wiring connecting the filter 21 and the switch 70 can be made shorter, so that the transmission loss of the two wirings can be further reduced.
  • the high-frequency module 1 may further include a capacitor connected to at least one of one end and the other end of the inductor 30 .
  • the high-frequency module 1 may include a capacitor 35 connected between the other end of the inductor 30 and the ground.
  • the low-pass filter function formed by the inductor 30 is enhanced, and the increase in insertion loss of the filters 11 and 12 can be further suppressed.
  • the capacitor 35 may be composed of a planar conductor formed on at least one of the surface and inside of the module substrate 90.
  • the capacitor 35 is formed inside the module substrate 90, so the high frequency module 1 can be miniaturized.
  • At least one of the filters 11 and 12 and the capacitor 35 may at least partially overlap when the module substrate 90 is viewed from above.
  • the wiring connecting at least one of the filters 11 and 12 and the capacitor 35 can be shortened, the transmission loss of the wiring can be reduced.
  • the switch 70 further has a terminal 70d for switching between connection and disconnection between the terminals 70a and 70b, for switching between connection and disconnection between the terminals 70a and 70c, and for switching between the terminal 70a and the terminal 70c.
  • the high-frequency module 1 further includes a filter 22 connected to the terminal 70d without the inductor 30 and having a fifth passband including at least part of the band E, The center frequency of the fifth passband may be positioned on the higher frequency side than the center frequency of the fourth passband, and filter 22 may be arranged closer to IC 80 than filter 21 .
  • the passband of the filter 22 is located on the higher frequency side than the passband of the filter 21. Therefore, the filter 22 is more affected than the filter 21 by the phase change due to the wiring length connecting the switch 70 and the filter.
  • the other band for example, band E
  • the other band can be positioned in the open region with higher accuracy. As a result, it is possible to suppress the leakage of the signals of the other band to the filters 11, 12 and 13, so that the insertion loss of the filter 22 having the passband of the other band can be reduced.
  • the high-frequency module 2 further includes a filter 14 connected to the other end of the inductor 30 and having a sixth passband including at least part of the band F, the sixth passband being the third passband. It may be positioned on the lower frequency side than the band.
  • the filter 11, 12, 13 and 14 it is possible to suppress the leakage of the signals of the other band (for example, band D) to the filters 11, 12, 13 and 14, so that the insertion loss of the filter 21 having the passband of the other band can be reduced.
  • the impedance of the commonly connected filters 11, 12 and 14 is in a capacitive region and positioned close to open to short, the inductance value of the inductor 34 can be reduced. Therefore, the transmission loss of the filters 11, 12 and 14 due to the inductor 34 can be reduced.
  • band A, band B, and band F are located on the lower frequency side than band C. Since the passbands of filters 11, 12 and 14 are located on the lower frequency side than the cutoff frequency of the low-pass filter formed by inductor 34, an increase in insertion loss of filters 11, 12 and 14 can be suppressed.
  • the filters 11, 12 and 14 are viewed from the terminal 70b in a state in which the terminals 70a and 70b are disconnected and the filter 13 is not connected to one end of the inductor 34.
  • the terminal 70b to the filter 13 The impedance in the fourth passband when viewed as a single unit may satisfy a complex conjugate relationship.
  • each of the filters 11, 12 and 13 is composed of one or more surface acoustic wave resonators having an IDT electrode 54, and each of the filters 11, 12 and 13 has an input end and an output end.
  • the electrode finger pitch of the IDT electrodes 54 constituting the series arm resonators included in the filters 11 and 12, including the series arm resonators arranged on the series arm paths connecting the may be larger than the electrode finger pitch of the IDT electrodes 54 constituting the .
  • the passbands of filters 11 and 12 connected to the other end of inductor 30 are located on the lower frequency side than the passband of filter 13 .
  • each of the filters 11, 12 and 13 includes a support substrate 65, a lower electrode 66 and an upper electrode 68 formed on one surface of the support substrate 65, and a lower electrode 66 and an upper electrode 68.
  • Each of the filters 11, 12 and 13 is arranged on a series arm path connecting the input terminal and the output terminal.
  • the piezoelectric layer 67 that includes the arranged series arm resonators and that constitutes the series arm resonators included in the filters 11 and 12 is thicker than the piezoelectric layer 67 that constitutes the series arm resonators included in the filter 13. good too.
  • the passbands of filters 11 and 12 connected to the other end of inductor 30 are located on the lower frequency side than the passband of filter 13 .
  • the communication device 4 includes an RFIC 3 that processes high frequency signals, and a high frequency module 1 that transmits high frequency signals between the RFIC 3 and the antenna 5 .
  • the effect of the high-frequency module 1 can be realized by the communication device 4.
  • matching elements such as inductors and capacitors, and switch circuits may be connected between the constituent elements.
  • the inductor may include a wiring inductor that is a wiring that connects each component.
  • the present invention can be widely used in communication equipment such as mobile phones as a low-loss multiplexer applicable to multi-band and multi-mode frequency standards.
  • RFIC radio frequency identification circuit
  • antenna 10a, 10b input/output terminal 10A, 10B acoustic wave filter 11, 12, 13, 14, 21, 22 filter 30, 31, 32, 33, 34, 161 inductor 35 capacitor 41, 42, 43, 44 , 45, 46 low noise amplifier 50 substrate 51 high acoustic velocity support substrate 52 low acoustic velocity film 53 piezoelectric film 54 IDT electrodes 55, 58 protective layer 57 piezoelectric single crystal substrate 60 elastic wave resonators 60a, 60b comb electrodes 61a, 61b electrode fingers 62a , 62b busbar electrode 65 support substrate 66 lower electrode 67 piezoelectric layer 68 upper electrode 70 switch 70a, 70b, 70c, 70d terminal 71, 72, 73 switch element 80 semiconductor IC 80a switch region 80b amplification region 81, 82, 83 chip component 90 module substrate 90a, 90b main surface 91, 92 resin member 95 external connection terminal 96 shield electrode layer 100

Abstract

La présente divulgation concerne un module haute fréquence (1) qui comprend : un commutateur (70) pour commuter la connexion et la déconnexion d'une borne (70a) et d'une borne (70b), et commuter la connexion et la déconnexion de la borne (70a) et d'une borne (70c) ; un inducteur (30) dont une extrémité est connectée à la borne (70b) ; un filtre (11) connecté à l'autre extrémité de l'inducteur (30) et ayant une première bande passante comprenant une partie d'une bande A ; un filtre (12) connecté à l'autre extrémité de l'inducteur (30) et ayant une deuxième bande passante comprenant une partie d'une bande B ; un filtre (13) connecté à la borne (70b) sans l'inducteur (30) entre eux, et ayant une troisième bande passante comprenant une partie d'une bande C ; et un filtre (21) connecté à la borne (70c) sans l'inducteur (30) entre eux, et ayant une quatrième bande passante comprenant une partie d'une bande D. La première bande passante et la deuxième bande passante sont sur le côté fréquence inférieure de la troisième bande passante.
PCT/JP2022/045730 2021-12-21 2022-12-12 Module haute fréquence et dispositif de communication WO2023120284A1 (fr)

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JP2021-207571 2021-12-21
JP2021207571 2021-12-21

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220877A (ja) * 2018-06-21 2019-12-26 株式会社村田製作所 マルチプレクサ
JP2019220827A (ja) * 2018-06-19 2019-12-26 株式会社村田製作所 マルチプレクサ
JP2020205477A (ja) * 2019-06-14 2020-12-24 株式会社村田製作所 マルチプレクサおよび通信装置
JP2021106341A (ja) * 2019-12-26 2021-07-26 株式会社村田製作所 高周波モジュールおよび通信装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220827A (ja) * 2018-06-19 2019-12-26 株式会社村田製作所 マルチプレクサ
JP2019220877A (ja) * 2018-06-21 2019-12-26 株式会社村田製作所 マルチプレクサ
JP2020205477A (ja) * 2019-06-14 2020-12-24 株式会社村田製作所 マルチプレクサおよび通信装置
JP2021106341A (ja) * 2019-12-26 2021-07-26 株式会社村田製作所 高周波モジュールおよび通信装置

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