WO2023115572A1

WO2023115572A1 - Component preparation method and plasma processing apparatus

Info

Publication number: WO2023115572A1
Application number: PCT/CN2021/141347
Authority: WO
Inventors: 侯磊; 何敏博; 林军
Original assignee: 华为技术有限公司
Priority date: 2021-12-24
Filing date: 2021-12-24
Publication date: 2023-06-29
Also published as: CN116648771A

Abstract

The embodiments of the present application relate to the technical field of plasma processing. Provided are a component preparation method and a plasma processing apparatus, which are used for solving the problem of how to improve the durability of a component in a plasma processing apparatus. The plasma processing apparatus comprises a chamber for executing plasma processing, and a component having at least a portion of the structure thereof exposed in the chamber. The component comprises a substrate, a first connecting layer, which covers an outer surface of the substrate, and a first protective layer, which covers an outer surface of the first connecting layer. The material of the substrate comprises a first metal ion; the material of the first connecting layer comprises a first functional group, which has the function of being bonded to a metal ion; and the material of the first protective layer comprises a first metal oxide, which comprises a second metal ion, wherein the first functional group is respectively bonded to the first metal ion in the substrate and to the second metal ion in the first protective layer.

Description

Part manufacturing method, plasma processing apparatus

technical field

The present application relates to the technical field of plasma processing, in particular to a method for preparing components and a plasma processing device.

Background technique

The plasma processing technology plays a key role in the field of integrated circuits. For the components in the chamber of the plasma processing device, the components need to have strong plasma resistance in the harsh etching or corrosive environment of the plasma processing environment. Etching, plasma corrosion resistance and other properties can improve the durability of components to ensure the uniformity of components at all times.

The uniformity of the components at each moment can improve the uniformity and stability of the plasma processing environment in the chamber of the plasma processing device, thereby improving the uniformity of the processing effect of the workpiece to be plasma processed.

Contents of the invention

Embodiments of the present application provide a component manufacturing method and a plasma processing device, which are used to solve the problem of how to improve the durability of components in the plasma processing device.

In order to achieve the above object, the application adopts the following technical solutions:

According to a first aspect of the embodiments of the present application, a plasma processing apparatus is provided, including a chamber for performing plasma processing, and components with at least a part of the structure exposed in the chamber. The component includes: a base body, a first connection layer covering the outer surface of the base body, and a first protective layer covering the outer surface of the first connection layer. The material of the matrix includes the first metal ion; the material of the first connection layer includes the first functional group, and the first functional group has the function of forming a bond with the metal ion; the material of the first protective layer includes the first metal oxide, and the first functional group has the function of forming a bond with the metal ion; A metal oxide includes second metal ions; wherein, the first functional group forms bonds with the first metal ions in the matrix and the second metal ions in the first protective layer respectively.

In the embodiment of the present application, the components exposed to the chamber for performing plasma treatment include a substrate, a first connection layer disposed on the surface of the substrate, and a first protection layer disposed on the surface of the first connection layer. The first connection layer includes a first functional group that has the function of forming a bond with a metal ion, and the first functional group forms a bond with the first metal ion in the matrix and the second metal ion in the first protective layer respectively, so that the first A connection layer is connected to the substrate through a chemical bond, and the first connection layer is connected to the first protection layer through a chemical bond. The first connecting layer is equivalent to the transfer layer, which is equivalent to connecting the first protective layer with the substrate through chemical bonds. Compared with the physical connection between the protective layer and the substrate, the first protective layer is connected to the substrate through chemical bonds in the embodiment of the present application, which can improve the bonding strength between the first protective layer and the substrate and reduce the risk of the first protective layer falling off the surface of the substrate. Therefore, for the components in the embodiments of the present application, the first metal oxide in the first protective layer has stronger plasma etching resistance and plasma corrosion resistance, and the first protective layer is connected to the substrate through chemical bonds (anti-shedding properties), can make the parts have strong plasma etching resistance, plasma corrosion resistance and shedding resistance, make the parts have strong durability, can prolong the service life of the parts, do not need to replace the parts frequently, and reduce the process cost , Improve production efficiency. It can improve the uniformity of the plasma processing environment in the chamber of the plasma processing device, improve the uniformity of the plasma processing environment between wafers, reduce the fluctuation of etching rate caused by particle pollution, and improve the stability of etching rate , eliminating wafer-to-wafer variation and reducing wafer defects.

In a possible implementation manner, the material of the first protective layer further includes a corrosion-resistant polymer material. Corrosion-resistant polymer materials not only have strong corrosion resistance and etching resistance, but also have strong toughness. After the corrosion-resistant polymer material is added to the first protective layer, the toughness of the first protective layer is enhanced, so that the first metal oxide in the first protective layer is less likely to fall off, and is suitable for substrates that have certain requirements on toughness. The problem of peeling off of the first protective layer can be further improved.

In a possible implementation manner, the material of the first protective layer further includes an inorganic non-metallic material. Inorganic non-metallic materials have high hardness and strong etching resistance. After adding inorganic non-metallic materials in the first protective layer, the strength of the first protective layer is enhanced, and the etching resistance is enhanced. Substrates with certain requirements. The damage to the first protective layer caused by the plasma processing environment in the process of WAC or plasma etching can be minimized, without frequent replacement of parts, and the process cost can be reduced.

In a possible implementation manner, the material of the first protective layer further includes corrosion-resistant polymer materials and inorganic non-metallic materials. In this way, the first protective layer can simultaneously be connected with the substrate by indirect chemical bonding, has strong toughness, high hardness and strong etching resistance.

In a possible implementation manner, the component further includes a second connection layer and a second protection layer; the second connection layer covers the outer surface of the first protection layer, the material of the second connection layer includes a second functional group, and the second connection layer covers the outer surface of the first protection layer. The two functional groups have the function of forming bonds with metal ions, and the second functional groups form bonds with the second metal ions in the first protective layer; the second protective layer covers the outer surface of the second connection layer; the second protective layer The material includes a second metal oxide, the second metal oxide includes a third metal ion, and the second functional group forms a bond with the third metal ion in the second protective layer. The thickness of the protective layer is increased by repeatedly disposing the second connection layer and the second protective layer. In this way, the second connection layer is provided between the first protective layer and the second protective layer, which can improve the bonding strength between the first protective layer and the second protective layer, and reduce the risk of film peeling off of components.

In a possible implementation manner, the material of the second protective layer further includes a corrosion-resistant polymer material. In this way, the toughness of the second protective layer can be improved.

In a possible implementation manner, the material of the second protective layer further includes an inorganic non-metallic material. In this way, the hardness of the second protective layer can be increased.

In a possible implementation manner, the material of the second protective layer further includes a corrosion-resistant polymer material and an inorganic non-metallic material. In this way, the toughness and hardness of the second protective layer can be improved at the same time.

In a possible implementation manner, the material of the first protective layer is different from that of the second protective layer. According to the actual needs of components or usage scenarios, multiple layers of protective layers can be set, and the materials of the first protective layer and the second protective layer can be adjusted, so that the first protective layer and the second protective layer can be flexibly convex on the basis of chemical connection. Adjust the hardness and/or toughness to meet the comprehensive requirements for strength, etch resistance and bonding strength of components in different application scenarios. It can also save materials and reduce costs.

In a possible implementation manner, the first metal oxide includes at least one of Y ₂ O ₃ , ZrO ₂ or YOF.

In a possible implementation manner, the corrosion-resistant polymer material includes at least one of PTFE, PEEK or CPVC.

In a possible implementation manner, the inorganic non-metallic material includes B ₄ C or BN.

In a possible implementation manner, the material of the first connection layer includes a silane coupling agent.

In a possible embodiment, the shape of the base body is flat plate, cube, arch column, cylinder, prism, truss, crescent, pentagram, ring, bole, lightning or corner shape. The components in the embodiment of the present application can have any shape, any size, and any aspect ratio, and are no longer limited to small flat plates, which can improve the problem of single geometric shape of the substrate and limited application scenarios.

In the second aspect of the embodiments of the present application, there is provided a method for preparing a component, including: forming a first connection layer covering the outer surface of the substrate; the material of the substrate includes first metal ions, and the material of the first connection layer includes The first functional group in which the first metal ion forms a bond, the first functional group forms a bond with the first metal ion; forms a first protective layer covering the outer surface of the first connection layer; the material of the first protective layer includes The first metal oxide; the first functional group forms a bond with the second metal ion in the first protection layer.

In the preparation method of the component provided in the embodiment of the present application, the formed first connection layer located on the outer surface of the substrate is connected to the substrate through a chemical bond, and the formed first protective layer located on the outer surface of the first connection layer is connected to the first connection layer through a chemical bond . The first connecting layer is equivalent to the transfer layer, which is equivalent to connecting the first protective layer with the substrate through chemical bonds. The bonding strength between the first protective layer and the substrate can be improved, and the risk of peeling of the first protective layer from the surface of the substrate can be reduced. Therefore, in the components formed in the embodiments of the present application, the first metal oxide in the first protective layer has strong plasma etching resistance and plasma corrosion resistance, and the first protective layer is connected to the substrate through a chemical bond ( Anti-shedding), can make the parts have strong plasma etching resistance, plasma corrosion resistance and anti-shedding properties, make the parts have strong durability, can prolong the service life of the parts, do not need to replace parts frequently, reduce Process cost, improve production efficiency.

In a possible implementation manner, the material of the first protective layer further includes a corrosion-resistant polymer material. In this way, the toughness of the second protective layer can be improved.

In a possible implementation manner, the material of the first protective layer further includes an inorganic non-metallic material. In this way, the hardness of the second protective layer can be increased.

In a possible implementation manner, the material of the first protective layer further includes corrosion-resistant polymer materials and inorganic non-metallic materials. In this way, the toughness and hardness of the second protective layer can be improved at the same time.

In a possible implementation manner, forming the first protective layer covering the outer surface of the first connection layer includes: forming the first protective layer covering the outer surface of the first connection layer by using an autocatalytic plating process. The first connection layer and the first protection layer are formed through a chemical reaction in the solution, and the first connection layer and the first protection layer can be formed through the chemical reaction without external power supply, which can reduce power consumption and production cost. And in the solution, uniform deposition of the first connection layer and the first protective layer can be realized on the surface of the substrate with any shape, and the application range is wide. Furthermore, the formed first connection layer and the first protective layer have high planarity, which greatly reduces the roughness of the first protective layer. It can solve the problem of ensuring a uniform and stable plasma processing environment between wafers due to the large surface roughness of the protective layer, and the problem of metal contamination of the wafer due to easy particle shedding, resulting in wafer defects.

In a possible implementation manner, the first connection layer covering the outer surface of the substrate includes: putting the substrate into a first solution to form the first connection layer covering the outer surface of the substrate; the solute of the first solution includes the first functional group.

In a possible implementation manner, the self-catalytic plating process is used to form the first protective layer covering the outer surface of the first connection layer, including: putting the substrate covered with the first connection layer into the second solution, The surface of the connection layer adsorbs the fourth metal ion; the solute of the second solution includes the fourth metal ion; the matrix adsorbed with the fourth metal ion is put into the third solution, and the fourth metal ion is chemically reduced; the third solution includes the reduction agent; put the chemically reduced substrate into the fourth solution, and perform electroless co-deposition to form the first protective layer covering the outer surface of the first connection layer; the fourth solution includes the first metal oxide. The first connection layer and the first protection layer are formed through a chemical reaction in the solution, and the first connection layer and the first protection layer can be formed through the chemical reaction without external power supply, which can reduce power consumption and production cost. And in the solution, uniform deposition of the first connection layer and the first protective layer can be realized on the surface of the substrate with any shape, and the application range is wide.

In a possible implementation, the method for preparing components further includes: forming a second connection layer covering the outer surface of the first protective layer; the material of the second connection layer includes a second functional group, and the second functional group It has the function of forming a bond with a metal ion, and the second functional group forms a bond with the second metal ion in the first protective layer; forms a second protective layer covering the outer surface of the second connection layer; the material of the second protective layer includes The second metal oxide, the second metal oxide includes a third metal ion, and the second functional group forms a bond with the third metal ion in the second protective layer. Multiple protective layers may be formed as necessary.

A third aspect of the embodiments of the present application provides a component, which may be, for example, a component in a plasma processing apparatus that is in contact with a plasma processing environment. The component can also be a component that can be used in a corrosive etch environment, for example. The component includes: a base body, a first connection layer covering the outer surface of the base body, and a first protective layer covering the outer surface of the first connection layer. The material of the matrix includes the first metal ion; the material of the first connection layer includes the first functional group, and the first functional group has the function of forming a bond with the metal ion; the material of the first protective layer includes the first metal oxide, and the first functional group has the function of forming a bond with the metal ion; A metal oxide includes second metal ions; wherein, the first functional group forms bonds with the first metal ions in the matrix and the second metal ions in the first protective layer respectively.

In the embodiment of the present application, the component includes a base body, a first connection layer disposed on the surface of the base body, and a first protective layer disposed on the surface of the first connection layer. The first connection layer includes a first functional group that can form a bond with a metal ion, and the first functional group forms a bond with the first metal ion in the matrix and the second metal ion in the first protective layer respectively, so that the first The connecting layer and the substrate are connected through chemical bonds, and the first connecting layer and the first protective layer are connected through chemical bonds. The first connecting layer is equivalent to the transfer layer, which is equivalent to connecting the first protective layer with the substrate through chemical bonds. Compared with the physical connection between the protective layer and the substrate, the first protective layer is connected to the substrate through chemical bonds in the embodiment of the present application, which can improve the bonding strength between the first protective layer and the substrate and reduce the risk of the first protective layer falling off the surface of the substrate. Therefore, for the components in the embodiments of the present application, the first metal oxide in the first protective layer has stronger plasma etching resistance and plasma corrosion resistance, and the first protective layer is connected to the substrate through chemical bonds (anti-shedding properties), can make the parts have strong plasma etching resistance, plasma corrosion resistance and shedding resistance, make the parts have strong durability, can prolong the service life of the parts, do not need to replace the parts frequently, and reduce the process cost , Improve production efficiency.

Description of drawings

FIG. 1 is a schematic structural diagram of a plasma processing device provided in an embodiment of the present application;

FIG. 2A is a schematic structural diagram of a component provided in an embodiment of the present application;

Figure 2B is a method for forming a plasma coating provided in the embodiment of the present application;

Figure 2C is another method for forming a plasma coating provided in the embodiment of the present application;

Figure 2D is another method for forming a plasma coating provided by the embodiment of the present application;

3A-3H are schematic structural diagrams of another component provided by the embodiment of the present application;

4A-4G are structural schematic diagrams of another component provided by the embodiment of the present application;

FIG. 5 is a schematic structural diagram of another component provided in the embodiment of the present application;

Fig. 6 is a schematic diagram of the preparation process of a component provided in the embodiment of the present application;

7A-7E are schematic diagrams of the preparation process of a component provided in the embodiment of the present application;

Fig. 8A is a schematic diagram of the preparation process of another component provided in the embodiment of the present application;

Fig. 8B is a schematic diagram of the preparation process of another component provided in the embodiment of the present application;

FIG. 9 is a schematic diagram of the shape of a substrate provided in the embodiment of the present application.

Reference signs:

100-component; 10-substrate; 20-plasma resistant coating; 21-first protective layer; 22-second protective layer; 23-third protective layer; 31-first connection layer; 32-second connection layer ; 33-the third connection layer; 200-plasma processing device; 201-cavity wall; 202-intake pipe; 210-chamber; 211-opening; -gas source; 216-gas source; 217-mass flow controller; 218-exhaust valve; 219-exhaust pump; 220-bias power RF generator; 221-power RF generator; 222-upper electrode; 300- work piece.

Detailed ways

The following will describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them.

Hereinafter, in the embodiments of the present application, terms such as "first" and "second" are used for convenience of description only, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Thus, a feature defined as "first", "second", etc. may expressly or implicitly include one or more of that feature. In the description of the present application, unless otherwise specified, "plurality" means two or more.

In the embodiment of the present application, "upper", "lower", "left" and "right" are not limited to be defined relative to the schematic placement orientations of the components in the drawings, and it should be understood that these directional terms may be relative concepts , which are used for description and clarification relative to , which may change accordingly according to changes in the orientation in which parts of the drawings are placed in the drawings.

In the embodiment of the present application, unless the context requires otherwise, throughout the description and claims, the term "comprising" is interpreted as an open and inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiment", "exemplarily" or "some examples" are intended to indicate particular features associated with the embodiment or examples , structure, material or characteristic is included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms are not necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples.

In describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more elements are in direct physical or electrical contact with each other. As another example, the term "coupled" may be used when describing some embodiments to indicate that two or more elements are in direct physical or electrical contact. However, the term "coupled" may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other. The embodiments disclosed herein are not necessarily limited by the context herein.

In the embodiment of this application, "and/or" is just a kind of relationship describing the relationship between related objects, which means that there may be three kinds of relationships, for example, A and/or B, which can mean that A exists alone, and A and B exist at the same time. B, there are three situations of B alone. In addition, the character "/" in this article generally indicates that the contextual objects are an "or" relationship.

Exemplary embodiments are described in the embodiments of the present application with reference to cross-sectional views and/or plan views and/or equivalent circuit diagrams that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations in shape from the drawings as a result, for example, of manufacturing techniques and/or tolerances are contemplated. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.

In the embodiments of the present application, the term "plasma resistance" refers to the resistance to etching and corrosion when exposed to the plasma processing environment generated in the plasma processing chamber.

The embodiment of the present application provides a plasma processing device, which can be used, for example, for plasma etching of metal films, indium tin oxide (Indium tin oxide, ITO) films, oxide films and other film layers when forming optoelectronic devices or integrated circuits , Plasma ashing treatment of resist film, plasma enhanced chemical vapor deposition film formation or plasma enhanced atomic layer deposition film formation.

As shown in FIG. 1 , the plasma processing apparatus may be a capacitively coupled plasma processing apparatus, and the plasma processing apparatus 200 includes a chamber 210 surrounded by chamber walls 201 . Inside the chamber 210 is a corrosive plasma (plasma) environment with a plasma processing environment for performing plasma processing. For example, the chamber 210 may be used to perform plasma etching (plasma etch chamber), perform plasma cleaning (plasma cleaning), perform plasma-enhanced chemical vapor deposition (plasma-enhanced chemical vapor deposition, PECVD), perform plasma enhanced Chambers for atomic layer deposition (plasma enhanced atomic layer deposition, PEALD), etc.

A workpiece 300 (eg, a wafer) is loaded through the opening 211 and clamped on a lower electrode 212 (eg, a cathode), which holds the workpiece 300 (eg, a wafer) by electrostatic force. For example, the lower electrode 212 holds the workpiece 300 through an electrostatic chuck or electrostatic chucks (ESC). Process gases are supplied to the interior of the chamber 210 from the gas sources 213 , 214 , 215 and 216 through the respective mass flow controllers 217 , through the gas inlet pipe 202 . The chamber 210 is exhausted via an exhaust pump 219 connected through an exhaust valve 218 .

When radio frequency (RF) power is applied, a plasma is formed over the workpiece 300 within the processing region of the chamber. A bias power RF generator 220 is coupled to the bottom electrode 212 through a matcher (not shown) to provide bias power and further energize the plasma. The power RF generator 221 is coupled to the upper electrode 222 (for example, the anode relative to the lower electrode 212 , or referred to as a showerhead) through a matcher (not shown), so as to provide high-frequency power to energize the plasma. After the upper electrode 222 and the lower electrode 212 receive radio frequency power, a radio frequency electric field is formed between the upper electrode 222 and the lower electrode 212, and the process gas transported into the chamber 210 is dissociated under the action of the radio frequency electric field to form an etching process gas. Or plasma for cleaning processes. The plasma processing apparatus 200 is computer-controlled by a controller 400 to control low-frequency bias power, high-frequency power, etching gas flow, process pressure, and other process parameters.

Of course, the plasma processing device may also be an inductively coupled plasma processing device, and the embodiment of the present application only uses a capacitively coupled plasma device as an example for illustration.

Taking the capacitively coupled plasma processing device shown in FIG. 1 as an example, in the plasma processing device, the cavity wall 201, the gas inlet pipe 202, the lower electrode 212, the upper electrode 222, and the circuit for supplying power to the upper electrode 212 and the lower electrode 222 Line (liner), electrostatic chuck or ESC, exhaust valve 218, exhaust pump 219 and other components, when at least part of the structure is exposed to the plasma processing environment generated in the plasma processing chamber, high temperature, high energy plasma, Mixtures of corrosive gases, high stresses, and combinations thereof, these extreme plasma processing environments can etch and/or corrode the components described above, resulting in component defects.

In order to reduce the defects generated by the parts and improve the etch resistance and/or corrosion resistance of the parts in this extreme environment. By designing these components to be anti-plasma, the service life of the components exposed to the plasma processing environment in the plasma processing chamber is extended, and the uniformity of the components at each moment is ensured.

In some embodiments, as shown in FIG. 2A , the component 100 is configured with a plasma-resistant coating on one surface. That is, the component 100 includes a substrate 10 and a plasma-resistant coating 20 covering a certain surface of the substrate 10 .

Exemplarily, as shown in FIG. 2B , a plasma-resistant coating 20 is formed on the surface of the substrate 10 by using thermal spraying (thermal spraying, TS) technology.

TS technology is based on different types of heat sources such as electric arcs, plasma arcs, combustion flames, etc., to heat metal and metal oxide materials to a molten/semi-melted state, and to form a particle mist flow with the help of high-speed atomization of airflow, and spray it at a certain speed Deposited on the surface of the substrate 10 , the fine and dispersed metal oxide material is deposited on the surface of the substrate 10 to form the plasma resistant coating 20 .

During the plasma processing, after a workpiece 300 is processed (hereinafter, the workpiece 300 is a wafer as an example for illustration), the chamber 210 is cleaned. That is, a waferless auto clean (WAC) step is performed to ensure that each wafer is subjected to the same plasma processing environment. However, since the thermal spraying technology sprays granular materials, the surface roughness of the plasma-resistant coating 20 (build-up coating) formed on the surface of the substrate 10 is relatively large, resulting in the occurrence of polymer side effects during the plasma treatment process. The product is easily deposited on the plasma resistant coating 20 surface. As a result, during the WAC process, the removal efficiency of polymer by-products decreases, and a uniform and stable plasma processing environment between wafers and wafers (wafer-to-wafer) cannot be guaranteed. Moreover, the surface roughness of the plasma-resistant coating 20 is relatively large, and particles are prone to fall off, resulting in metal contamination of the wafer and forming product defects. In addition, the plasma-resistant coating 20 formed by the spraying process is in physical contact with the substrate 10 , which is prone to peeling, resulting in a short service life of the component 100 . Furthermore, the TS technology forms the plasma-resistant coating 20, which is only applicable to the sheet-shaped substrate 10. For non-flaky, complex-shaped substrates 10, because the surface of the substrate 10 is uneven, the plasma-resistant coating 20 formed is uniform. The difference is large.

Alternatively, as an example, a physical vapor deposition (PVD) process is used to form the plasma-resistant coating 20 .

A plasma-resistant coating 20 may be formed on the surface of the substrate 10 by using a vacuum evaporation process as shown in FIG. 2C . The vacuum evaporation plating process is based on the thermal evaporation of the target, and the atoms on the surface of the material undergo physical reactions such as sputtering to complete the transfer process of the material from the target to the film. Vacuum evaporation is to use a certain heating and evaporation method to evaporate and vaporize the target material, and the particles are attached to the surface of the substrate 10 to condense into a metal film coating to form a plasma-resistant coating 20 .

Alternatively, the plasma-resistant coating 20 may be formed on the surface of the substrate 10 by using an electron beam evaporation plating process as shown in FIG. 2D . The electron beam evaporation plating process is bombarded by the particle beam, and the atoms on the surface of the material undergo physical reactions such as sputtering to complete the transfer process of the material from the target to the film. Electron beam evaporation is to directly heat the target material based on the electron beam under vacuum conditions, so that the evaporated target material is vaporized and transported to the surface of the substrate 10 and condensed to form a thin film, so as to form the plasma-resistant coating 20 .

However, the PVD process requires complex equipment and high process requirements. Moreover, based on the principle of the PVD process itself, it is impossible to deposit a dense plasma-resistant coating 20 . Moreover, the deposition rate is low, the formation time of the plasma-resistant coating 20 is long, the process efficiency is low, and the cost is high. Furthermore, the PVD process forms the plasma-resistant coating 20, which is only applicable to the sheet-shaped substrate 10. For non-flaky, complex-shaped substrates 10, due to the uneven surface of the substrate 10, the plasma-resistant coating 20 formed is uniform. The difference is large. Moreover, since the size of the chamber of the PVD process is fixed, the substrate 10 whose shape and size are not suitable for the chamber cannot form the plasma-resistant coating 20 using the PVD process, and the application scenarios are limited. In addition, since the shrinkage rate of the plasma-resistant coating 20 and the base body 10 are different during cooling. Therefore, internal stress and microcracks are easily generated between the plasma-resistant coating 20 and the substrate 10 . In addition, the formation of the plasma-resistant coating 20 by PVD technology is a single physical attachment method, and the plasma-resistant coating 20 is attached to the surface of the substrate 10 . As a result, the bonding strength between the plasma-resistant coating 20 and the surface of the substrate 10 is low, which may easily cause particle or film peeling, resulting in a short service life of the component 100 . Moreover, when the plasma processing device processes the wafer, particles or film layers fall off, which may easily lead to metal contamination of the wafer and form product defects.

The above two processes have some technical limitations, so that they have defects that cannot be eliminated in practical applications, such as particle or film layer shedding, short service life of components, and product defects.

Moreover, the material of the plasma-resistant coating 20 formed by the above process is usually yttrium trioxide (Y ₂ O ₃ ) or yttrium oxyfluoride (YOF). This plasma-resistant coating 20 consisting only of metal oxides is very prone to damage during the waferless auto-cleaning (waferless auto clean, WAC) cleaning step, and cannot guarantee a uniform and stable plasma chamber between wafers. room environment.

In some embodiments, boron carbide (B ₄ C) with high etch resistance is used as the material of the plasma resistant coating 20 , but the problem of particle shedding will greatly increase the defect rate on the wafer surface.

Based on this, the embodiment of the present application also provides a component 100 for solving the problem that the base body 10 has a single geometric shape and limited application scenarios. It is also used to improve the surface roughness of the plasma-resistant coating 20, and the bonding strength between the plasma-resistant coating 20 and the substrate 10 is low, which easily causes the plasma-resistant coating 20 to peel off (peeling), and the service life of the component 100 is relatively short. short question.

As shown in FIG. 3A , the component 100 includes a base body 10 , a first connection layer 31 and a first protection layer 21 .

The material of the base body 10 includes the first metal ions, and the base body 10 may be any structure exposed to the plasma processing environment generated in the plasma processing chamber in a plasma processing device.

The substrate 10 can be, for example, the above-mentioned cavity wall 201, the lower electrode 212, the upper electrode 222, the liner for powering the upper electrode 212 and the lower electrode 222, an electrostatic chuck or ESC, an air intake pipe 202, an exhaust valve 218, The exhaust pump 219 and the like may be exposed to components of the plasma processing environment.

Wherein, the first metal ion included in the matrix 10 may be, for example, aluminum (Al).

As shown in FIG. 3A , the first connection layer 31 covers the outer surface of the substrate 10 . The first connection layer 31 may be a self-assembled layer.

In some embodiments, as shown in FIG. 3A (cross-sectional view of component 100 ), the first connection layer 31 covers the entire outer surface of the substrate 10 . That is to say, the first connection layer 31 completely wraps the outer surface of the substrate 10 .

For example, the component 100 is an upper electrode 222 or a liner, etc., and all outer surfaces of the component 100 are exposed to the plasma processing environment. By arranging the first connection layer 31 on each outer surface of the component 100, and then arranging the first protective layer 21 on the first connection layer 31, the first protective layer 21 can wrap each surface of the component 100, thereby realizing the component 100. The surfaces exposed to the plasma processing environment are all protected by the first protective layer 21 .

In some other embodiments, as shown in FIG. 3B , FIG. 3C and FIG. 3D , the first connection layer 31 covers part of the outer surface of the substrate 10 .

For example, the component 100 is a chamber wall 201, a lower electrode 212, an electrostatic chuck or ESC, an inlet pipe 202, an exhaust valve 218, an exhaust pump 219, etc. Part of the outer surface of the component 100 is exposed to the plasma processing environment. Therefore, the first connection layer 31 and the first protective layer 21 can be provided only on the surface exposed to the plasma processing environment, so as to avoid waste of resources and reduce consumables.

Or, for example, in the process of forming the first connecting layer 31, due to factors such as technology, the first assembly film 31 cannot be covered on the entire surface of the base 10 (for example, the body 10 needs to be clamped, and the clamped position of the body 10 cannot be formed. First assembled membrane 31).

The material of the first connection layer 31 includes a first functional group, and the first functional group has a function of forming a bond with metal ions. That is to say, the groups included in the material of the first connection layer 31 can chemically react with metal ions to form metal bonds. The first functional group, for example, may include one of hydroxyl (-OH), amino (-NH ₂ ) or mercapto (-SH).

For example, the material of the first connecting layer 31 includes a silane coupling agent, and functional groups such as -OH, -NH2 and -SH in the silane coupling agent that can form bonds with metal ions are used as functional groups that can bond with metal ions in the first connecting layer 31. The first functional group for ionic bonding.

The first assembly film 31 is disposed on the outer surface of the substrate 10 , and the first functional group (eg -OH) in the first connection layer 31 forms a bond with the first metal ion (eg Al ³⁺ ) in the substrate 10 .

That is to say, the first functional group and the first metal ion will undergo a chemical reaction to form a metal bond, so that the first functional group and the first metal ion are connected through a chemical bond. That is, the first connection layer 31 and the substrate 10 are connected by chemical bonds.

Wherein, to determine whether the first functional group and the first metal ion form a bond, X-ray photoelectron spectroscopy (XPS) or electron spectroscopy for chemical analysis (electron spectroscopy for chemical analysis, ESCA) to judge. The XPS measurement is accurate to 0.1at%, the spatial resolution is 100um, and the X-ray analysis depth is about 1.5nm. By measuring the kinetic energy of the received electrons, the binding energy of the element can be calculated. Based on the XPS peak division processing method, the valence state and the bonding state of the element are judged by the binding energy position to detect and analyze whether the first functional group and the first metal ion form a bond.

Or, by synchrotron radiation (synchrotron radiation) method to judge. Synchrotron radiation absorption spectroscopy is generally used to reflect the valence state of a single element in a sample, the coordination environment of a single atom, and the electronic structure (orbital transition, hybridization) of a single absorbing atom. It is a microscopic and structural judgment test. For metal elements, the full spectrum of absorption spectrum includes near-edge absorption structure (X-ray absorption near edge structure, XANES) and extended edge absorption structure (extended X-ray absorption fine structure, EXAFS), which can provide a good valence state and coordination information. Mainly analyze the change of the chemical state of the element through the peak position assignment and offset, so as to obtain the bonding state of the functional group and the metal ion, so as to detect and analyze whether the first functional group and the first metal ion form a bond.

As shown in FIG. 3A , the first protection layer 21 covers the outer surface of the first connection layer 31 .

In some embodiments, as shown in FIG. 3A , the first protection layer 21 covers the entire outer surface of the first connection layer 31 .

Exemplarily, as shown in FIG. 3A , FIG. 3B , FIG. 3C and FIG. 3D , the first protective layer 21 may just cover the outer surface of the first assembly film 31 .

Or, for example, as shown in FIG. 3E , the first protective layer 21 covers the outer surface of the first connection layer 31 and also covers the surface of the substrate 10 not covered by the first connection layer 31 .

In some other embodiments, as shown in FIG. 3F , the first protective layer 21 covers part of the outer surface of the first connection layer 31 .

Exemplarily, as shown in FIG. 3F and FIG. 3G , a part of the side of the first connection layer 31 intersecting with the substrate 10 is not covered by the first protective layer 21 .

Or, for example, as shown in FIG. 3H , the part of the first connection layer 31 away from the top surface of the base 10 is not covered by the first protection layer 21 .

The material of the first protective layer 21 includes a first metal oxide (such as Y ₂ O ₃ ), the first metal oxide includes a second metal ion (such as Y ³⁺ ), the first functional group in the first connection layer 31 group (eg -OH) and a second metal ion to form a bond (eg Y ³⁺ ).

That is to say, the first functional group and the second metal ion will undergo a chemical reaction to form a metal bond, so that the first functional group and the second metal ion are connected through chemical bonds. That is, the first protective layer 21 and the first connection layer 31 are connected by a chemical bond.

Wherein, judging whether the first functional group and the second metal ion form a bond can be detected and analyzed by methods such as XPS or coating radiation.

Oxides of subgroup III metals and subgroup IV metals have high strength, are self-stable, and resist plasma corrosion. Therefore, in the embodiment of the present application, the first metal oxide may be, for example, oxides of subgroup III metals and subgroup IV metals. Exemplarily, the first metal oxide is at least one of yttrium trioxide (Y ₂ O ₃ ), zirconium dioxide (ZrO ₂ ) or yttrium oxyfluoride (YOF).

In the embodiment of the present application, the thickness of the first protective layer 21 is not limited, and it can be reasonably set as required. For example, if the component 100 needs strong plasma resistance, the thickness of the first protective layer 21 can be appropriately thickened.

In addition, it should be emphasized that the first functional group in the first connection layer 31 forms bonds with the first metal ion in the matrix 10 and the second metal ion in the first protective layer 21 respectively, but it is not limited to, All the first functional groups in the first connection layer 31 form bonds with the first metal ion or the second metal ion. Depending on the thickness of the first connection layer 31 , the first connection layer 31 may include a first functional group that does not form a bond with the first metal ion or the second metal ion. Similarly, depending on the thickness of the matrix 10 , the matrix 10 may include first metal ions that are not bonded to the first functional group. Similarly, according to the thickness of the first protective layer 21 , the first protective layer 21 may include second metal ions that do not bond with the first functional group.

In the embodiment of the present application, the component 100 includes a base body 10 , a first connection layer 31 disposed on the surface of the base body 10 , and a first protective layer 21 disposed on the surface of the first connection layer 31 . The first connection layer 31 includes a first functional group that can form a bond with a metal ion, and the first functional group forms a bond with the first metal ion in the substrate 10 and the second metal ion in the first protective layer 21 respectively, so as to The first connection layer 31 is connected to the substrate 10 through a chemical bond, and the first connection layer 31 is connected to the first protection layer 21 through a chemical bond. The first connection layer 31 is equivalent to the transfer layer, which is equivalent to connecting the first protective layer 21 with the substrate 10 through a chemical bond. Compared with the physical connection between the protective layer 21 and the substrate 10, the first protective layer 21 is connected to the substrate 10 through a chemical bond in the embodiment of the present application, which can improve the bonding strength between the first protective layer 21 and the substrate 10, and reduce the first protective layer 21 from Risk of peeling of the substrate 10 surface. Therefore, in the component 100 in the embodiment of the present application, the first metal oxide in the first protective layer 21 has strong plasma etching resistance and plasma corrosion resistance, and the first protective layer 21 is chemically bonded to the substrate 10 Connection (resistance to shedding) can make the component 100 have stronger plasma etching resistance, plasma corrosion resistance and shedding resistance, so that the component 100 has stronger durability, and can prolong the service life of the component 100 without Frequent replacement of parts 100 reduces process costs and improves production efficiency.

The uniformity of the component 100 at each moment is relatively high. When the component 100 is applied to a plasma processing device, the uniformity of the plasma processing environment in the chamber 210 can be improved, and wafer-to-wafer (wafer-to-wafer) can be improved. ), reduce etch rate fluctuations caused by particle contamination, improve etch rate stability, and eliminate variations between wafers ), reducing wafer defects.

In some embodiments, the material of the first protective layer 21 also includes a corrosion-resistant polymer material.

The corrosion-resistant polymer material, for example, may include at least one of polytetrafluoroethylene (PTFE), polyetheretherketone (peek materials, PEEK) or chlorinated polyvinyl chloride (CPVC).

Corrosion-resistant polymer materials not only have strong corrosion resistance and etching resistance, but also have strong toughness. After the corrosion-resistant polymer material is added to the first protective layer 21, the toughness of the first protective layer 21 is enhanced, so that the first metal oxide in the first protective layer 21 is less likely to fall off, and is suitable for substrates that have certain requirements for toughness 10. The problem of peeling of the first protective layer 21 can be further improved.

In some other embodiments, the material of the first protective layer 21 also includes inorganic non-metallic materials.

Inorganic non-metallic materials, for example, may include boron carbide (B ₄ C) or boron nitride (BN).

Inorganic non-metallic materials have high hardness and strong etching resistance. After adding inorganic non-metallic materials in the first protective layer 21, the strength of the first protective layer 21 is enhanced, and the etching resistance is enhanced. It is suitable for corrosion resistance The substrate 10 has certain requirements on etching ability. The damage to the first protective layer 21 caused by the plasma processing environment during the WAC or plasma etching process can be minimized, and the component 100 does not need to be replaced frequently, thereby reducing the process cost.

In some other embodiments, the material of the first protective layer 21 also includes corrosion-resistant polymer materials and inorganic non-metallic materials. That is to say, the first protective layer 21 is a composite film layer in which the functions of the first metal oxide material, the corrosion-resistant polymer material and the inorganic non-metallic material are integrated.

In this way, the first protective layer 21 can be connected with the substrate 10 by indirect chemical bonding, has strong toughness, high hardness and strong etching resistance, so that the first protective layer 21 can be connected with the substrate 10 The bonding strength between them is high, which can further improve the peeling problem of the first protective layer 21 and prolong the service life of the component 100 . At the same time, it can minimize the damage of the plasma processing environment to the first protective layer 21 during the WAC or plasma etching process, further improve the uniform and stable plasma processing environment between wafer-to-wafer, and improve the etching rate. Stability (etch rate stability).

On this basis, in some embodiments, as shown in FIG. 4A , the component 100 further includes a second connection layer 32 and a second protection layer 22 .

As shown in FIG. 4A , the second connection layer 32 covers the outer surface of the first protection layer 21 .

In some embodiments, as shown in FIG. 4A , the second connection layer 32 covers the entire outer surface of the first protection layer 21 .

Exemplarily, as shown in FIG. 4A , the second connection layer 32 just covers the outer surface of the first protection layer 21 .

Or, for example, as shown in FIG. 4B , the second connection layer 32 covers the outer surface of the first protective layer 21 and also covers part of the surface of the substrate 10 (or the first connection layer 31 ).

In other embodiments, as shown in FIG. 4C , the second connection layer 32 covers part of the outer surface of the first protection layer 21 .

The material of the second connection layer 32 includes a second functional group, the second functional group has the function of forming a bond with a metal ion, and the second functional group forms a bond with the second metal ion in the first protective layer 21.

That is to say, the second functional group and the second metal ion will undergo a chemical reaction to form a metal bond, so that the second functional group and the second metal ion are connected through chemical bonds. That is, the second connection layer 32 and the first protection layer 21 are connected by a chemical bond.

Wherein, the material of the second connection layer 32 and the material of the first connection layer 31 may be the same or different. The second functional groups in the second connection layer 32 and the first functional groups in the first connection layer 31 may be completely the same, partially the same, or completely different.

As shown in FIG. 4A , the second protection layer 22 covers the outer surface of the second connection layer 32 .

In some embodiments, as shown in FIG. 4A , the second protection layer 22 covers the entire outer surface of the second connection layer 32 .

Exemplarily, as shown in FIG. 4A and FIG. 4C , the second protective layer 22 just covers the outer surface of the second connection layer 32 .

Or, for example, as shown in FIG. 4D , the second protection layer 22 covers the outer surface of the second connection layer 32 and also covers a part of the surface of the first protection layer 21 (or the substrate 10 ).

Or, for example, as shown in FIG. 4E , the second protective layer 22 covers the outer surface of the second connection layer 32 and also covers part of the surface of the first connection layer 31 . In this case, the third metal ion in the second protective layer 22 also forms a bond with the first functional group in the first connection layer 31 .

In some other embodiments, as shown in FIG. 4F , the second protection layer 22 covers part of the outer surface of the second connection layer 32 .

Exemplarily, as shown in FIG. 4F , the side of the second connecting layer 32 intersecting with the substrate 10 is not covered by the second protective layer 22 .

Or, for example, as shown in FIG. 4G , the part of the second connection layer 32 away from the top surface of the base 10 is not covered by the second protection layer 22 .

The material of the second protective layer 22 includes a second metal oxide, the second metal oxide includes a third metal ion, the second functional group in the second connection layer 32 and the third metal ion in the second protective layer 22 into a bond.

That is to say, the second functional group and the third metal ion will undergo a chemical reaction to form a metal bond, so that the second functional group and the third metal ion are connected through a chemical bond. That is, the second protective layer 22 and the second connection layer 32 are connected by a chemical bond.

Wherein, the second metal oxide and the first metal oxide may be the same or different.

In some embodiments, the material of the second protective layer 22 also includes a corrosion-resistant polymer material.

The corrosion-resistant polymer material, for example, may include at least one of PTFE, PEEK or CPVC.

Corrosion-resistant polymer materials not only have strong corrosion resistance and etching resistance, but also have strong toughness. After the corrosion-resistant polymer material is added to the second protective layer 22, the toughness of the second protective layer 22 is enhanced, so that the second metal oxide in the second protective layer 22 is not easy to fall off, and is suitable for the substrate 10 that has certain requirements for toughness. . The problem of peeling of the first protective layer 21 can be further improved.

In other embodiments, the material of the second protective layer 22 also includes inorganic non-metallic materials.

Inorganic non-metallic materials, for example, may include B ₄ C or BN.

Inorganic non-metallic materials have high hardness and strong etching resistance. After adding inorganic non-metallic materials in the second protective layer 22, the strength of the second protective layer 22 is enhanced, and the etching resistance is enhanced. The substrate 10 has certain requirements on etching ability. The damage to the second protective layer 22 caused by the plasma processing environment during the WAC or plasma etching process can be minimized, and the component 100 does not need to be replaced frequently, thereby reducing the process cost.

In some other embodiments, the material of the second protective layer 22 also includes corrosion-resistant polymer materials and inorganic non-metallic materials.

Regarding the material of the first protection layer 21 and the material of the second protection layer 22 , in some embodiments, the material of the first protection layer 21 and the material of the second protection layer 22 are completely the same.

That is to say, by repeatedly disposing the second connection layer 32 and the second protection layer 22 , the thickness of the protection layer is increased to improve the etching resistance of the component 100 . In this way, the second connection layer 32 is provided between the first protection layer 21 and the second protection layer 22 , which can improve the bonding strength between the first protection layer 21 and the second protection layer 22 and reduce the risk of peeling of the component 100 .

Of course, the thickness of the protective layer can also be increased by increasing the thickness of the first protective layer 21 . In this way, the process steps are few, the process is simple, and the production efficiency is high.

In other embodiments, the material of the first protection layer 21 is different from that of the second protection layer 22 .

Wherein, the material of the first protective layer 21 is different from the material of the second protective layer 22, and may be the type of material included in the first protective layer 21 and the second protective layer 22 (metal oxide, corrosion-resistant polymer material, inorganic non-metallic material, etc.) materials), or the first protective layer 21 and the second protective layer 22 may include the same type of material, but the specific materials in each type are different.

In an implementation manner, the first protection layer 21 and the second protection layer 22 include different materials.

Exemplarily, the material of the first protection layer 21 includes a first metal oxide, and the material of the second protection layer 22 includes a second metal oxide and a corrosion-resistant polymer material.

Wherein, the first metal oxide and the second metal oxide may be the same or different.

Or, for example, the material of the first protective layer 21 includes a first metal oxide, and the material of the second protective layer 22 includes a second metal oxide and an inorganic non-metallic material.

Alternatively, as an example, the material of the first protective layer 21 includes a first metal oxide, and the material of the second protective layer 22 includes a second metal oxide, a corrosion-resistant polymer material, and an inorganic non-metallic material.

Alternatively, as an example, the material of the first protective layer 21 includes a first metal oxide and a corrosion-resistant polymer material, and the material of the second protective layer 22 includes a second metal oxide and an inorganic non-metallic material.

Or, for example, the material of the first protective layer 21 includes a first metal oxide and a corrosion-resistant polymer material, and the material of the second protective layer 22 includes a second metal oxide, a corrosion-resistant polymer material and an inorganic non-metallic material.

Wherein, the first metal oxide and the second metal oxide may be the same or different. The corrosion-resistant polymer materials in the first protective layer 21 and the second protective layer 22 may be the same or different.

Alternatively, as an example, the material of the first protective layer 21 includes a first metal oxide and an inorganic non-metallic material, and the material of the second protective layer 22 includes a second metal oxide and a corrosion-resistant polymer material.

Alternatively, as an example, the material of the first protective layer 21 includes a first metal oxide and an inorganic non-metallic material, and the material of the second protective layer 22 includes a second metal oxide, a corrosion-resistant polymer material, and an inorganic non-metallic material.

Wherein, the first metal oxide and the second metal oxide may be the same or different. The inorganic non-metallic materials in the first protective layer 21 and the second protective layer 22 may be the same or different.

Or, for example, the material of the first protection layer 21 includes a first metal oxide, a corrosion-resistant polymer material and an inorganic non-metallic material, and the material of the second protection layer 22 includes a second metal oxide and a corrosion-resistant polymer material.

Or, for example, the material of the first protective layer 21 includes a first metal oxide, a corrosion-resistant polymer material and an inorganic non-metallic material, and the material of the second protective layer 22 includes a second metal oxide and an inorganic non-metallic material.

In another implementation manner, the first protection layer 21 and the second protection layer 22 include the same type of material, but the specific materials of each type are different.

Exemplarily, the material of the first protection layer 21 includes a first metal oxide and a corrosion-resistant polymer material, and the material of the second protection layer 22 includes a second metal oxide and a corrosion-resistant polymer material.

Wherein, the first metal oxide and the second metal oxide are different. And/or, the corrosion-resistant polymer materials in the first protection layer 21 and the second protection layer 22 are different.

Or, for example, the material of the first protective layer 21 includes a first metal oxide and an inorganic non-metallic material, and the material of the second protective layer 22 includes a second metal oxide and an inorganic non-metallic material.

Wherein, the first metal oxide and the second metal oxide are different. And/or, the inorganic non-metallic materials in the first protection layer 21 and the second protection layer 22 are different.

Or, as an example, the material of the first protective layer 21 includes a first metal oxide, a corrosion-resistant polymer material and an inorganic non-metallic material, and the material of the second protective layer 22 includes a second metal oxide, a corrosion-resistant polymer material and Inorganic non-metallic materials.

Wherein, the first metal oxide and the second metal oxide are different. And/or, the inorganic non-metallic materials in the first protection layer 21 and the second protection layer 22 are different. And/or, the corrosion-resistant polymer materials in the first protection layer 21 and the second protection layer 22 are different.

According to the actual needs or usage scenarios of the component 100, multiple protective layers can be provided, and the materials of the first protective layer 21 and the second protective layer 22 can be adjusted so that the first protective layer 21 and the second protective layer 22 can be chemically connected on the basis of , the hardness and/or toughness can be flexibly adjusted to meet the comprehensive requirements of the component 100 for strength, etching resistance and bonding strength in different application scenarios. It can also save materials and reduce costs.

In some embodiments, as shown in FIG. 5 , the component 100 further includes a third connection layer 33 and a third protective layer 23, and the third connection layer 33 covers (completely or partially covers) the outer surface of the second protective layer 22. , the third protective layer 23 covers (completely or partially covers) the outer surface of the third connecting layer 33 .

Of course, the component 100 may also include multiple layers of connecting layers and protective layers alternately stacked, and the number of connecting layers and protective layers may be set reasonably according to needs.

Wherein, the materials of the multi-layer connecting layers may be the same or different. The materials of the multiple protective layers can be the same or different. The composition structure and mechanical properties of the protective layer can be independently regulated according to the performance of the material to realize the application in different working scenarios.

It should be emphasized that the component 100 provided in the embodiment of the present application may not only be a component in a plasma processing device, but may also be a component in any equipment that requires high wear resistance and etching resistance. For example, component 100 may be a component in an aerospace vehicle such as an airplane, rocket, or satellite.

Based on this, the embodiment of the present application also provides a component manufacturing method for forming the first protective layer 21 and the second protective layer 22 on the substrate 10 to obtain the component 100 .

As shown in Figure 6, a method for preparing a component is provided, including:

S10 , as shown in FIG. 7A , forming a first connection layer 31 covering the outer surface of the substrate 10 .

Wherein, the material of the matrix 10 includes a first metal ion, the material of the first connection layer 31 includes a first functional group that can form a bond with the first metal ion in the matrix 10, and the first functional group and the first metal ion form a bond, so as to realize the chemical connection between the first connection layer 31 and the substrate 10.

Exemplarily, as shown in FIG. 7A , step S10 includes: putting the substrate 10 into a first solution to form a first connection layer 31 covering the outer surface of the substrate 10 .

Wherein, the solute of the first solution includes the first functional group, the solvent of the first solution may include an organic solvent, for example, after the matrix 10 is put into the first solution, the surface modification (surface modification) is carried out to the matrix 10, the first function The groups are grafted on the surface of the substrate 10 .

Exemplarily, the first solution includes a silane coupling agent solution containing functional groups such as -OH, -NH ₂ and -SH.

In some embodiments, the silane coupling agent solution includes 0.1%-10% acetone solution.

The acetone solution as a solvent, on the one hand, has a diluting effect, and on the other hand, makes the bonding between the amino group (-NH ₂ ) and the mercapto group (-SH) polar, which is beneficial to the bonding between the first functional group and the metal ion.

It can be understood that the above clarifies that the first connection layer 31 can cover the outer surface of the base body 10 completely or partially. That is, the first connection layer 31 covers at least part of the outer surface of the base body 10 . Depending on the size of the first connecting layer 31 to be formed (the degree of coverage on the outer surface of the base body 10), different clamping tools can be selected or the base body 10 can be processed so that after the base body 10 is put into the first solution, The formed first connection layer 31 completely or partially covers the outer surface of the substrate 10 .

S20 , forming the first protection layer 21 covering the outer surface of the first connection layer 31 .

Wherein, the material of the first protective layer 21 includes a first metal oxide, the first metal oxide includes a second metal ion, the first functional group in the first connection layer 31 and the second metal in the first protective layer 21 Ions form bonds.

For example, the first protection layer 21 covering the outer surface of the first connection layer 31 can be formed by using an autocatalytic plating process.

For example, step S20 includes:

S21 , as shown in FIG. 7B , put the substrate 10 covered with the first connection layer 31 into the second solution, so as to adsorb the fourth metal ions on the surface of the first connection layer 31 .

Wherein, the solute of the second solution includes water, and the solute of the second solution includes the fourth metal ion, so as to complete the metal ion adsorption (ion adsorption) of the first assembly layer 31, which is equivalent to grafting the fourth metal ion on the surface of the first assembly layer 31. Metal ion. The fourth metal ion may include, for example, metal ions such as yttrium ion (Y ³⁺ ) and nickel ion (Ni ²⁺ ).

S22. As shown in FIG. 7C , put the matrix 10 adsorbed with the fourth metal ion into the third solution, and perform chemical reduction on the fourth metal ion.

Wherein, the third solution includes a reducing agent, and the reduced fourth metal ions will be generated in situ on the surface of the substrate 10 as metal seed crystals. For example, the third solution includes sodium borohydride (NaBH ₄ ) or potassium borohydride (KBH ₄ ) solution.

S23 , as shown in FIG. 7D , put the chemically reduced substrate 10 into the fourth solution, and perform electroless co-deposition (electrolessco-deposition) to form the first protection layer 21 covering the outer surface of the first connection layer 31 .

Wherein, as shown in FIG. 7D , in the case that the material of the first protective layer 21 includes the first metal oxide, the fourth solution includes the first metal oxide.

In the case that the material of the first protective layer 21 includes the first metal oxide and the corrosion-resistant polymer material, the fourth solution is a composite solution including the first metal oxide and the corrosion-resistant polymer material.

In the case that the material of the first protective layer 21 includes the first metal oxide and the inorganic non-metal material, the fourth solution is a composite solution including the first metal oxide and the inorganic non-metal material.

As shown in FIG. 7E , in the case that the material of the first protective layer 21 includes the first metal oxide, corrosion-resistant polymer material and inorganic non-metallic material, the fourth solution includes the first metal oxide, corrosion-resistant polymer material materials and composite solutions of inorganic non-metallic materials.

After the chemically reduced substrate 10 is put into the fourth solution, the metal seed crystal on the surface of the first connection layer 31 is used as the self-catalytic activation center, so that the first metal oxide, the corrosion-resistant polymer material and the inorganic non-metallic material are co-deposited on the surface of the first connection layer 31 . The second metal ions included in the first metal oxide form bonds with the first functional groups in the first connection layer 31 to realize the chemical connection between the first connection layer 31 and the first protection layer 21 .

The thickness of the first protective layer 21 can be adjusted by controlling the reaction time of the electroless co-deposition.

In the preparation method of the components provided in the embodiment of the present application, the first connection layer 31 formed on the outer surface of the substrate 10 is connected to the substrate 10 through chemical bonds, and the first protective layer 21 formed on the outer surface of the first connection layer 31 is connected to the first The connection layers 31 are connected by chemical bonds. The first connection layer 31 is equivalent to the transfer layer, which is equivalent to connecting the first protective layer 21 with the substrate 10 through a chemical bond. The bonding strength between the first protective layer 21 and the substrate 10 can be improved, and the risk of peeling of the first protective layer 21 from the surface of the substrate 10 can be reduced. Therefore, in the component 100 formed in the embodiment of the present application, the first metal oxide in the first protective layer 21 has strong plasma etching resistance and plasma corrosion resistance, and the first protective layer 21 is formed through chemical bonds and The substrate 10 is connected (resistance to falling off), which can make the component 100 have strong plasma etching resistance, plasma corrosion resistance and falling off resistance, so that the component 100 has strong durability and can prolong the service life of the component 100 , without frequent replacement of the component 100, reducing process costs and improving production efficiency. When the component 100 is applied to a plasma processing device, the uniformity of the plasma processing environment in the chamber 210 can be improved, and the uniformity of the plasma processing environment between wafers and wafers (wafer-to-wafer) can be improved, Reduce etch rate fluctuations caused by particle contamination, improve etch rate stability, eliminate wafer-to-wafer variations, and reduce wafer defects.

In addition, the first connection layer 31 and the first protective layer 21 are formed through a chemical reaction in the solution, and the first connection layer 31 and the first protective layer 21 can be formed through a chemical reaction without an external power supply, which can reduce power consumption, reduce manufacturing cost. Moreover, in the solution, the first connection layer 31 and the first protective layer 21 can be uniformly deposited on the surface of the substrate 10 with any shape, and the application range is wide. Furthermore, the formed first connection layer 31 and the first protective layer 21 have high flatness, and the roughness of the first protective layer 21 is greatly reduced. It can solve the problem of ensuring a uniform and stable plasma processing environment between wafers due to the large surface roughness of the protective layer, and the problem of metal contamination of the wafer due to easy particle shedding, forming wafer defects.

In some embodiments, as shown in FIG. 8A, the component 100 further includes a second connection layer 32 and a second protective layer 22, and the method for preparing the component further includes:

S30 , forming a second connection layer 32 covering the outer surface of the first protection layer 21 .

Wherein, the material of the second connecting layer 32 includes a second functional group, and the second functional group forms a bond with the second metal ion in the first protective layer 21, so as to realize the chemistry between the first protective layer 21 and the second connecting layer 32. connect.

Exemplarily, step S30 includes: putting the substrate 10 covered with the first protective layer 21 into a fifth solution to form the second connection layer 32 covering the outer surface of the first protective layer 21 .

Wherein, the solute of the fifth solution includes the second functional group, and the solvent of the fifth solution may include an organic solvent, for example.

Exemplarily, the fifth solution includes a silane coupling agent solution containing functional groups such as -OH, -NH ₂ and -SH.

In some embodiments, the method of forming the second connection layer 32 is the same as the method of forming the first connection layer 31 .

In some embodiments, the fifth solution is the same as the first solution described above.

S40 , forming the second protection layer 22 covering the outer surface of the second connection layer 32 .

Wherein, the material of the second protective layer 22 includes a second metal oxide, and the second functional group forms a bond with the third metal ion included in the second metal oxide in the second protective layer 22 to realize the connection between the second connecting layer 32 and the second metal oxide. The second protective layer 22 is chemically connected.

For example, the second protective layer 22 covering the outer surface of the second connection layer 32 can be formed by using the same autocatalytic plating process as that used for forming the first protective layer 21 .

For example, step S40 includes:

S41 , putting the substrate 10 covered with the second connection layer 32 into the above-mentioned second solution, so as to adsorb the fourth metal ions on the surface of the second connection layer 32 .

Of course, in step S41, the second solution may not be put in, but a solution containing the fifth metal ion may be put in.

S42. Put the matrix 10 adsorbed with the fourth metal ion into the above-mentioned third solution, and perform chemical reduction on the fourth metal ion.

Certainly, in step S42, the third solution may not be put in, but another reducing agent may be put in.

S43 , putting the chemically reduced substrate 10 into the sixth solution, and performing electroless co-deposition to form the second protective layer 22 covering the outer surface of the second connection layer 32 .

Wherein, in the case that the material of the second protection layer 22 includes the second metal oxide, the sixth solution includes the second metal oxide. In the case that the material of the second protective layer 22 includes the second metal oxide and the corrosion-resistant polymer material, the sixth solution is a composite solution including the second metal oxide and the corrosion-resistant polymer material. In the case that the material of the second protective layer 22 includes the second metal oxide and the inorganic non-metal material, the sixth solution is a composite solution including the second metal oxide and the inorganic non-metal material. In the case where the material of the second protective layer 22 includes a second metal oxide, a corrosion-resistant polymer material and an inorganic non-metallic material, the sixth solution includes the second metal oxide, a corrosion-resistant polymer material and an inorganic non-metallic material. compound solution.

In the case where the material of the second protective layer 22 is the same as that of the first protective layer 21 , the sixth solution is the same as the above-mentioned fourth solution. In the case where the material of the second protective layer 22 is different from that of the first protective layer 21 , the sixth solution is different from the above-mentioned fourth solution.

In the above steps S10-S40, some of the steps can be removed as required, and it is not limited to include every step. Certain steps can also be added as needed, and are not limited to only include the above steps.

In some embodiments, as shown in FIG. 8B , the component manufacturing method further includes repeatedly performing steps S30 and S40 to form multiple layers of connecting layers and protective layers alternately stacked.

Wherein, the materials of the multi-layer connecting layers may be the same or different. The materials of the multilayer connection layers can be the same or different. By adjusting the material of the solution used in the electroless co-deposition, the material of the multilayer connection layer can be made the same or different. The composition structure and mechanical properties of the protective layer can be independently regulated according to the performance of the material to realize the application in different working scenarios.

In some embodiments, the connection layer and the protective layer are formed by putting the substrate 10 into a solution. In this case, as shown in Figure 9, the shape of the substrate 10 is flat, cubic, arched, cylindrical, rhomboid, rhomboid, crescent, pentagram, ring, bole , lightning-shaped or corner-shaped multi-faceted three-dimensional graphics.

Based on this, the formed part 100 is also in the shape of a flat plate, a cube, an arch column, a cylinder, a prism, a truss, a crescent, a pentagram, a ring, a bole, a lightning, or a corner. Three-dimensional graphics.

In the embodiment of the present application, when forming the protective layer on the surface of the substrate 10, the substrate 10 may be put into a solution to form a corresponding film layer structure. Therefore, by setting the size of the opening for containing the solution, it is possible to satisfy the uniform film formation of substrates 10 of different shapes in the opening. Therefore, the component 100 in the embodiment of the present application can be any shape, any size, and any aspect ratio. limit problem.

Based on the preparation method of the above components, an embodiment of the present application also provides a device for forming a protective layer, including a first open cavity for containing the first solution, a second open cavity for containing the second solution, and a second open cavity for containing the second solution. The third opening of the third solution is used to hold the fourth opening of the fourth solution and the control assembly.

The control assembly is used to put the substrate 10 to be formed with the protective layer into the first opening, and after the first connection layer 31 is formed, take out the substrate 10 covered with the first connection layer 31 from the first opening. It is also used to put the substrate 10 into the second opening, and after the first connection layer 31 absorbs the fourth metal ion, take out the substrate 10 adsorbed with the fourth metal ion from the second opening. It is also used to put the substrate 10 into the third opening, and take out the chemically reduced substrate 10 from the third opening after the reduction reaction of the fourth metal ion occurs. It is also used to put the substrate 10 into the fourth opening, and after the first protective layer 21 is formed, the substrate 10 covered with the first protective layer 21 is taken out from the fourth opening.

In some embodiments, the means of the protective layer comprises a plurality of fourth open cavities.

Exemplarily, part of the fourth opening is filled with a fourth solution including the first metal oxide. Part of the fourth opening is filled with a fourth solution including the first metal oxide and the corrosion-resistant polymer material. Part of the fourth opening contains a fourth solution including the first metal oxide and inorganic non-metallic material. Part of the fourth opening contains a fourth solution including the first metal oxide, corrosion-resistant polymer material and inorganic non-metallic material.

The embodiments of the present application do not limit the shapes of the first opening, the second opening, the third opening, and the fourth opening, and they can be reasonably set as required.

In some embodiments, when the material of the first connection layer 31 and the material of the second connection layer 32 are different, the device of the protective layer further includes a fifth opening for holding the fifth solution. If the materials of the first protective layer 21 and the second protective layer 22 are different, the device of the protective layer further includes a sixth opening for holding the sixth solution.

The control assembly is also used for putting the base body 10 into and taking it out from the fifth opening cavity, and is also used for putting the base body 10 into and taking it out from the sixth opening cavity.

Of course, the number of openings in the device of the protective layer can be reasonably set according to needs, which is not limited in this embodiment of the present application.

The protective layer device provided in the embodiment of the present application has a simple structure and high flexibility, and can process substrates 10 of different shapes and sizes, and has high adaptability.

The above is only a specific implementation of the application, but the scope of protection of the application is not limited thereto. Anyone familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the application. Should be covered within the protection scope of this application. Therefore, the protection scope of the present application should be determined by the protection scope of the claims.

Claims

A plasma processing apparatus comprising a chamber for performing plasma processing, and a component having at least part of a structure exposed in the chamber,

The parts include:

a matrix, the material of which comprises a first metal ion;

The first connection layer covers the outer surface of the substrate; the material of the first connection layer includes a first functional group, and the first functional group has a function of forming a bond with a metal ion;

A first protective layer covering the outer surface of the first connection layer; the material of the first protective layer includes a first metal oxide, and the first metal oxide includes second metal ions;

Wherein, the first functional group forms bonds with the first metal ion in the matrix and the second metal ion in the first protective layer respectively.
The plasma processing apparatus according to claim 1, wherein the material of the first protective layer further comprises a corrosion-resistant polymer material and/or an inorganic non-metallic material.
The plasma processing apparatus according to claim 1 or 2, wherein the component further comprises a second connection layer and a second protective layer;

The second connection layer is covered on the outer surface of the first protective layer, and the material of the second connection layer includes a second functional group, and the second functional group has a function of forming a bond with a metal ion, so The second functional group forms a bond with the second metal ion in the first protective layer;

The second protective layer covers the outer surface of the second connection layer; the material of the second protective layer includes a second metal oxide, and the second metal oxide includes a third metal ion, and the second The functional group forms a bond with the third metal ion in the second protective layer.
The plasma processing apparatus according to claim 3, wherein the material of the second protective layer further includes corrosion-resistant polymer materials and/or inorganic non-metallic materials.
The plasma processing apparatus according to claim 3 or 4, wherein the material of the first protective layer is different from that of the second protective layer.
The plasma processing device according to any one of claims 1-5, wherein the first metal oxide comprises at least one of Y 2 O 3 , ZrO 2 or YOF.
The plasma processing device according to any one of claims 2-6, wherein the corrosion-resistant polymer material comprises at least one of PTFE, PEEK or CPVC.
The plasma processing device according to any one of claims 2-7, characterized in that the inorganic non-metallic material comprises B 4 C or BN.
The plasma processing device according to any one of claims 1-8, characterized in that, the material of the first connection layer includes a silane coupling agent.
The plasma processing device according to any one of claims 1-9, characterized in that, the shape of the substrate is flat plate, cube, arch column, cylinder, rhombus, rhombus, crescent, Pentagram, Ring, Bole, Lightning or Corner.
A method for preparing a component, characterized in that it comprises:

forming a first connection layer covering the outer surface of the substrate; the material of the substrate includes a first metal ion, the material of the first connection layer includes a first functional group, and the first functional group has a metal ion The function of ionic bonding; the first functional group forms a bond with the first metal ion;

forming a first protective layer covering the outer surface of the first connection layer; the material of the first protective layer includes a first metal oxide, and the first metal oxide includes a second metal ion; the first function The group forms a bond with the second metal ion.
The method for manufacturing components according to claim 11, wherein the material of the first protective layer further includes corrosion-resistant polymer materials and/or inorganic non-metallic materials.
The method for preparing a component according to claim 11 or 12, wherein forming a first protective layer covering the outer surface of the first connection layer comprises:

The first protective layer covering the outer surface of the first connection layer is formed by using an autocatalytic plating process.
The method for preparing a part according to any one of claims 11-13, characterized in that the first connection layer covering the outer surface of the substrate comprises:

Putting the matrix into a first solution to form the first connection layer covering the outer surface of the matrix; the solute of the first solution includes the first functional group.
The method for preparing components according to claim 13, wherein the first protective layer covering the outer surface of the first connection layer is formed by using an autocatalytic plating process, comprising:

putting the matrix covered with the first connection layer into a second solution, and adsorbing fourth metal ions on the surface of the first connection layer; the solute of the second solution includes the fourth metal ion;

putting the matrix adsorbed with the fourth metal ion into a third solution, and chemically reducing the fourth metal ion; the third solution includes a reducing agent;

Putting the chemically reduced substrate into a fourth solution for electroless co-deposition to form a first protective layer covering the outer surface of the first connection layer; the fourth solution includes the first metal oxide .
The method for preparing a part according to any one of claims 11-15, wherein the method for preparing a part further comprises:

forming a second connection layer covering the outer surface of the first protective layer; the material of the second connection layer includes a second functional group, the second functional group has a function of forming a bond with a metal ion, the the second functional group forms a bond with the second metal ion in the first protective layer;

forming the second protective layer covering the outer surface of the second connection layer; the material of the second protective layer includes a second metal oxide, and the material of the second metal oxide includes a third metal ion, so The second functional group forms a bond with the third metal ion.