WO2023112090A1 - Optical power supply converter - Google Patents

Optical power supply converter Download PDF

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Publication number
WO2023112090A1
WO2023112090A1 PCT/JP2021/045847 JP2021045847W WO2023112090A1 WO 2023112090 A1 WO2023112090 A1 WO 2023112090A1 JP 2021045847 W JP2021045847 W JP 2021045847W WO 2023112090 A1 WO2023112090 A1 WO 2023112090A1
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Prior art keywords
light
optical
light receiving
receiving elements
optical waveguide
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PCT/JP2021/045847
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French (fr)
Japanese (ja)
Inventor
臼井健
卓郎 山中
尚友 磯村
悦司 大村
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株式会社京都セミコンダクター
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Priority to PCT/JP2021/045847 priority Critical patent/WO2023112090A1/en
Priority to JP2022506930A priority patent/JP7101437B1/en
Publication of WO2023112090A1 publication Critical patent/WO2023112090A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device

Definitions

  • the present invention relates to an optical power supply converter that converts light input via an optical fiber cable into electric power by photoelectric conversion and outputs the electric power.
  • an optical power supply converter is used to send light to the vicinity of the electronic equipment via an optical fiber cable, photoelectrically convert the light, and supply electric power.
  • a typical single-mode optical fiber cable used for optical input to an optical power supply converter has a small diameter of about 10 ⁇ m for the core through which light propagates. Therefore, for a large optical input exceeding, for example, 1 W, the core may be damaged by the fiber fuse phenomenon, and there is a limit to the amount of optical input. For this reason, an optical feeding converter is known that can increase the light input and the output by inputting light through a plurality of optical fiber cables, for example, as in Patent Document 1.
  • the optical power converter is required to be miniaturized so that it can be accommodated in the device that is the output destination.
  • an optical fiber cable has a clad that surrounds the core and a sheath that surrounds the clad, and the sheath is covered with a protective material to prevent breakage, so it has a certain thickness. Therefore, when connecting a plurality of optical fiber cables, a plurality of light-receiving elements must be spaced apart so that the plurality of optical fiber cables can be arranged. It's not easy. Further, if a voltage/current conversion device is required in order to obtain an output voltage/current corresponding to the output destination, miniaturization becomes even more difficult.
  • An object of the present invention is to provide a compact optical power supply converter that can be easily configured to suppress a decrease in the photoelectric conversion efficiency of a light-receiving element due to the incidence of strong light and to output voltage and current that match the output destination. is to provide
  • An optical power supply converter is an optical power supply converter having a plurality of light receiving elements for converting light incident through an optical fiber cable into electric power, and has a demultiplexing function for light incident from the optical fiber cable.
  • a plurality of light receiving elements are disposed so as to correspond to a plurality of outlets of the optical waveguide element; the plurality of light receiving elements each have an anode electrode and a cathode electrode;
  • the plurality of light receiving elements are connected in series, in parallel, or in series-parallel by a plurality of conductive members respectively connected to the anode electrode and the cathode electrode of the light receiving element.
  • the optical power supply converter demultiplexes the light incident via the optical fiber cable by the optical waveguide element and makes the light incident on the plurality of light receiving elements. Decrease can be suppressed.
  • this optical power supply converter since a plurality of light receiving elements are connected in series, parallel or series-parallel by a plurality of conductive members, it can be easily formed so as to output a voltage and a current suitable for the output destination. can be done.
  • the optical feeding converter can be miniaturized.
  • an optical feeding converter according to the first aspect of the invention, further comprising a semiconductor substrate in which the optical waveguide element and the plurality of light receiving elements are integrally formed on the principal surface side.
  • an optical power feeding converter according to the second aspect of the invention, wherein the optical waveguide element and the plurality of light receiving elements each have a core layer on a clad layer, and the plurality of light receiving elements each include the core layer. It is characterized in that it has a light absorption layer and a semiconductor layer, respectively. According to the above configuration, the plurality of light receiving elements corresponding to the plurality of exits of the optical waveguide element can be easily arranged without positional deviation, and the input light can be made incident on the light receiving elements. .
  • an optical power feeding converter comprising a pair of semiconductor substrates in which the optical waveguide element and the plurality of light receiving elements are integrally formed on main surface sides thereof, The main surface sides of the pair of semiconductor substrates are coupled to face each other so that the light inlets of the optical waveguide elements overlap each other and the plurality of light receiving elements overlap each other.
  • optical power supply converter of the present invention it is possible to suppress the deterioration of the photoelectric conversion efficiency of the light receiving element due to the incidence of strong light, and to easily configure the voltage and current to be output in accordance with the output destination.
  • FIG. 1 is a plan view of an optical feeding converter according to an embodiment of the present invention
  • FIG. FIG. 2 is a sectional view taken along line II-II of FIG. 1
  • 2 is a cross-sectional view taken along line III-III of FIG. 1
  • FIG. FIG. 2 is a cross-sectional view taken along line IV-IV of FIG. 1
  • It is a figure which shows the example of parallel connection of several light receiving element.
  • FIG. 3 is a view equivalent to FIG. 2 showing an etching mask forming process for forming a photodiode
  • FIG. 3 is a view equivalent to FIG.
  • FIG. 2 showing an etching mask forming process for forming an optical waveguide
  • FIG. 3 is a view corresponding to FIG. 2 showing an etching mask forming process for light receiving element isolation
  • FIG. 2 is a plan view of an optical feeding converter provided with an MMI optical waveguide device
  • FIG. 3 is a view equivalent to FIG. 2 showing a modified example of a light receiving element
  • FIG. 4 is a view equivalent to FIG. 3 showing a modification of a light receiving element
  • FIG. 3 is an explanatory diagram of superimposing two optical feeding converters
  • FIG. 11 is a perspective view of optical power converters formed in a superimposed manner
  • the optical power converter 1 includes an optical waveguide element 5 having one inlet 3 and a plurality of (for example, four) outlets 4a to 4d on the main surface 2a side of the semiconductor substrate 2, It has a plurality of light-receiving elements 6a-6d arranged to correspond to the plurality of outlets 4a-4d of the optical waveguide element 5.
  • the semiconductor substrate 2 is, for example, a semi-insulating InP substrate of a III-V group semiconductor.
  • the optical waveguide element 5 has a light splitting function, splits the light incident from the entrance 3 equally into two on the way, and equally splits the split light into two.
  • An optical waveguide is formed to branch symmetrically in two steps.
  • This optical waveguide element 5 has a core layer 8 formed on a cladding layer 7 formed on a main surface 2a of a semiconductor substrate 2.
  • the core layer 8 is branched from an inlet 3 in two stages to form a plurality of outlets 4a to 4d. It is an optical waveguide that continues to
  • the cladding layer 7 is, for example, an n-InP layer of an n-type semiconductor.
  • the core layer 8 is, for example, an InGaAsP layer.
  • the cladding layer 7 and air in contact with the core layer 8 have a lower refractive index than the core layer 8 . Therefore, the light incident on the core layer 8 (optical waveguide) from the inlet 3 travels while being totally reflected at the interface with the cladding layer 7 or air.
  • the clad layer 7 has a thickness of 2 ⁇ m, for example.
  • the core layer 8, which is an optical waveguide, has a thickness of, for example, 3 ⁇ m and a width of, for example, 3 ⁇ m in a cross section perpendicular to the traveling direction of light.
  • Light receiving elements 6a to 6d are arranged so as to correspond to the exits 4a to 4d.
  • the light receiving elements 6a to 6d have a light absorption layer 9 and a p-type semiconductor layer 10 (semiconductor layer) on a core layer 8 on a clad layer 7 of an n-type semiconductor.
  • Light-receiving elements 6a to 6d which are PIN-type photodiodes, are formed by the structure in which the light absorption layer 9 and the core layer 8 are sandwiched between the p-type semiconductor layer 10 and the clad layer 7 of the n-type semiconductor.
  • the light absorption layer 9 is, for example, an InGaAs layer, and has a thickness and width of 3 ⁇ m, for example, and a length of 15 ⁇ m, for example, along the traveling direction of light.
  • the p-type semiconductor layer 10 is, for example, a p-InP layer, and has a thickness of, for example, 1 ⁇ m, and a width and length equivalent to those of the light absorption layer 9 .
  • light is input from the output end of a single-mode optical fiber cable OC to the entrance 3 of the optical waveguide element 5 as indicated by an arrow L1.
  • This light travels through the core layer 8 while being totally reflected at the interface with the air or the clad layer 7, reaches, for example, the exit 4a of the optical waveguide element 5 as indicated by arrow L2, and enters the light receiving element 6a. Since the optical waveguide element 5 equally divides the light, the light reaches the other outlets 4b-4d and enters the corresponding light-receiving elements 6b-6d.
  • the light receiving elements 6a to 6d emit evanescent light that penetrates into the light absorption layer 9 due to the wave nature of the light traveling through the core layer 8 by the wavelength of the light. current).
  • the input light is infrared light with a wavelength of about 1.3 ⁇ m, for example, and is continuously input at a constant intensity and converted into constant DC power by the light receiving elements 6a to 6d.
  • An anode electrode 11 (for example, a metal film containing titanium, platinum and gold) is formed on the p-type semiconductor layer 10 and connected to the p-type semiconductor layer 10 .
  • a cathode electrode 12 (for example, a metal film containing gold, germanium, nickel and titanium) connected to the n-type semiconductor layer is formed on the clad layer 7 which is an n-type semiconductor layer.
  • the clad layer 7 extends from the optical waveguide element 5 to the plurality of light receiving elements 6a to 6d. 7 has been removed.
  • a portion 14 is formed.
  • the anode terminal portion 13 and the cathode terminal portion 14 are metal films containing, for example, titanium, platinum, and gold.
  • a plurality of light receiving elements 6a to 6d are connected in series by a plurality of conductive members 15 such as gold wires.
  • the anode electrode 11 of the light receiving element 6a at one end of the plurality of light receiving elements 6a to 6d connected in series is connected to the anode terminal portion 13 by the conductive member 16, and the cathode electrode 12 of the light receiving element 6d at the other end is conductive. It is connected to the cathode terminal portion 14 by a member 17 .
  • the anode terminal portion 13 and the cathode terminal portion 14 can be interchanged depending on the connection mode of the conductive members 15, 16, and 17.
  • a plurality of light receiving elements 6a to 6d are connected by a plurality of conductive members 15, they can be connected not only in series as shown in FIG. 1, but also in parallel as shown in FIG. It is also possible to connect in series and parallel by combining series connection and parallel connection. Therefore, the plurality of light receiving elements 6a to 6d can be connected so that the optical power supply converter 1 supplies power with voltage and current corresponding to the connection destination.
  • a method for forming the optical power supply converter 1 will be described.
  • a cladding layer 7 n-type semiconductor layer
  • a core layer 8 and a light absorption layer 9 are formed on the main surface 2a side of a wafer-shaped semiconductor substrate 2 by a known film formation method such as an epitaxial growth method.
  • a p-type semiconductor layer 10 is formed, and an etching mask 21 for forming a photodiode is formed by, for example, a known photolithography method (etching mask forming step for forming a photodiode).
  • the p-type semiconductor layer 10 and the light absorption layer 9 are etched by a known etching method such as the RIE method (reactive ion etching method), and the etching mask 21 is removed.
  • an etching mask 22 for forming an optical waveguide is formed by a known photolithography method (etching mask forming step for forming an optical waveguide). Then, the core layer 8 is etched by a known etching method such as RIE to form the optical waveguide element 5, and the etching mask 22 is removed.
  • an etching mask 23 for light-receiving element isolation is formed by a known photolithography method (etching mask forming process for light-receiving element isolation). Then, the cladding layer 7 is etched by a known etching method such as RIE to expose the main surface 2a of the semiconductor substrate 2, and the etching mask 23 is removed. At this time, the cladding layer 7 between the plurality of light receiving elements 6a to 6d is removed (see FIGS. 1 and 3).
  • metal films for forming the anode electrode 11, the cathode electrode 12, the anode terminal portion 13, and the cathode terminal portion 14 are selectively deposited on predetermined regions by, for example, a vapor deposition method, and separated into individual pieces by cleaving or cutting. 1 to form an optical power supply converter 1 having a rectangular shape in a plan view, and are connected by conductive members 15, 16, and 17 (for example, see FIG. 1).
  • An antireflection film such as a silicon nitride film is preferably formed at the entrance 3 of the optical waveguide element 5 .
  • the optical power supply converter 1 includes a fixing mechanism for fixing the output end of the optical fiber cable OC at a position corresponding to the entrance 3 of the optical waveguide element 5, an anode terminal portion 13, a cathode terminal portion 14, and a fixing mechanism. It is housed in a case with an output terminal for supplying power to the outside.
  • the optical waveguide element 5 may be an MMI (Multi-Mode Interference) type waveguide element.
  • MMI Multi-Mode Interference
  • the light absorption layer 29 InGaAs layer
  • an optical waveguide element 25 having non-doped InP layers as clad layers 27a and 27b sandwiching a core layer 28 is formed.
  • PIN photodiodes in which a light absorption layer 29 (InGaAs layer) is sandwiched between an n-type semiconductor layer 30 (n-InP layer) and a p-type semiconductor layer 31 (p-InP layer) are used as light receiving elements 26a to 26d. ing. Since light directly enters the light absorption layer 29 from the core layer 28, an improvement in photoelectric conversion efficiency can be expected.
  • the optical feeding converter 1 in FIG. 1 is assumed to be a first optical feeding converter 1a.
  • a second optical feed converter 1b is connected to the optical feed converter 1 by a plurality of conductive members 15, 16, and 17 so that the connections of the plurality of light receiving elements 6a to 6d are in a mirror image relationship with the first optical feed converter 1a. and so that the inlets 3 of the optical waveguide elements 5 of the first and second optical feed converters 1a and 1b overlap each other and the corresponding light receiving elements 6a to 6d of the first and second optical feed converters 1a and 1b overlap each other.
  • the major surface 2a sides of both semiconductor substrates 2 are joined in a facing manner.
  • the optical power supply converter 41 By coupling the pair of semiconductor substrates 2 in this manner, it is possible to form the optical power supply converter 41 in which the number of light receiving elements corresponding to one optical fiber cable OC is increased while suppressing an increase in size. . Moreover, since the first and second optical power supply converters 1a and 1b can be separately manufactured by the conductive members 15, 16 and 17, the optical power supply converter 41 can be easily formed.
  • the anode terminal portions 13 and the cathode terminal portions 14 are connected and bonded to each other by, for example, a conductive paste 42, and the clad layers 7 are bonded to each other by an adhesive 43, for example.
  • the anode electrode 11 of the light receiving element 6a of the first optical feeding converter 1a and the corresponding anode electrode 11 of the light receiving element 6d of the second optical feeding converter 1b are connected by a conductive paste. be done. The same applies to other anode electrodes.
  • the lead frames may be sandwiched between them to form external output terminals. Since the first and second optical power converters 1a and 1b are connected in parallel, the optical power converter 41 can increase the output current while maintaining the output voltage.
  • An optical power supply converter 41 may be formed in which a pair of semiconductor substrates 2 are coupled via a spacer member.
  • the optical power supply converter 1 demultiplexes the light incident via the optical fiber cable OC by the optical waveguide element 5 and makes the light incident on the plurality of light receiving elements 6a to 6d. A decrease in conversion efficiency can be suppressed. Since a plurality of light-receiving elements 6a to 6d are connected in series, parallel or series-parallel by a plurality of conductive members 15, 16 and 17, the optical power supply converter can output a voltage and a current suitable for the output destination. 1 can be easily formed. In addition, since light is demultiplexed by the optical waveguide element 5, the number of connections of the optical fiber cables OC can be reduced. Since no device is required, the size of the optical power supply converter 1 can be reduced.
  • the optical waveguide element 5 and the plurality of light receiving elements 6a to 6d are aligned with the corresponding outlets 4a to 4d of the optical waveguide element 5 and integrally formed on the semiconductor substrate 2.
  • the input light can be incident on the light receiving elements 6a to 6d without positional deviation of the light receiving elements 6a to 6d.
  • the optical waveguide element 5 and the plurality of light receiving elements 6a to 6d each have a core layer 8 on the cladding layer 7, and the plurality of light receiving elements 6a to 6d have a light absorption layer 9 and a semiconductor layer on the core layer 8. It has a p-type semiconductor layer 10 . Therefore, the plurality of light receiving elements 6a to 6d corresponding to the plurality of outlets 4a to 4d of the optical waveguide element 5 can be easily arranged without positional deviation, and the input light can be detected by the light receiving elements 6a to 6d. can be made incident on
  • An optical feed converter 41 combining a pair of optical feed converters 1 includes a pair of semiconductors so that the light inlets 3 of the optical waveguide element 5 overlap each other and the plurality of light receiving elements 6a to 6d overlap each other.
  • the main surfaces 2a sides of the substrates 2 are joined to face each other. Therefore, it is possible to increase the number of light receiving elements 6a to 6d corresponding to one optical fiber cable OC while suppressing an increase in the size of the optical power supply converter 41 and maintaining a small size.
  • the number of exits of the optical waveguide element 5 is not limited to four, and may have, for example, two or eight or more exits.
  • An optical power supply converter can also be formed by integrally forming an optical waveguide device having, for example, a cladding layer made of SiO2 and a core layer made of Si, and a light receiving device on a Si substrate, which is a Group IV semiconductor. .
  • those skilled in the art can implement various modifications to the above embodiment without departing from the scope of the present invention, and the present invention includes such modifications.
  • optical feed converter 1a first optical feed converter 1b: second optical feed converter 2: semiconductor substrate 2a: main surface 3: inlets 4a to 4d: outlet 5: optical waveguide elements 6a to 6d: light receiving element 7: clad layer 8: core layer 9: light absorption layer 10: p-type semiconductor layer (semiconductor layer) 11: Anode electrode 12: Cathode electrode 13: Anode terminal portion 14: Cathode terminal portion 15, 16, 17: Conductive members 21, 22, 23: Etching mask 25: Optical waveguide element 26: Light receiving element 27a, 27b: Clad layer 28: core layer 29: light absorption layer 30: n-type semiconductor layer 31: p-type semiconductor layer 41: optical power supply converter OC: optical fiber cable

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

[Problem] To provide a compact optical power supply converter which enables suppression of reduction in photoelectric conversion efficiency of a light reception element due to entry of strong light, and which can be easily configured such that voltage and current are outputted according to an output destination. [Solution] An optical power supply converter (1) is provided with a plurality of light reception elements (6a-6d) for converting light, which enters through an optical fiber cable (OC), to electric power; and an optical waveguide element (5) equipped with a function for spectrally separating light which enters through the optical fiber cable (OC). The light reception elements (6a-6d) arranged so as to correspond to a plurality of outlets (4a-4d) of the optical waveguide element each have an anode electrode (10) and a cathode electrode (11). The plurality of light reception elements (6a-6d) are formed by being connected in series and in parallel, or in series-parallel, by a plurality of electroconductive members (15, 16, 17) connected to the anode electrodes (10) and the cathode electrodes (11) of the plurality of light reception elements (6a-6d).

Description

光給電コンバータoptical power converter
　本発明は、光ファイバケーブルを介して入力した光を光電変換によって電力に変換して出力する光給電コンバータに関する。 The present invention relates to an optical power supply converter that converts light input via an optical fiber cable into electric power by photoelectric conversion and outputs the electric power.
　給電設備がない遠隔地、給電による微弱な電磁界がノイズとなる環境、防爆を必要とする環境、電気的相互影響がある超高電圧設備内等、特殊な環境では電源ケーブルを介して電子機器類を作動させる電力を供給できない場合がある。そのため、電子機器類の傍まで光ファイバケーブルを介して光を送り、この光を光電変換して電力を供給する光給電コンバータが利用されている。 In special environments, such as remote locations without power supply facilities, environments where weak electromagnetic fields from power supply become noise, environments requiring explosion protection, and ultra-high voltage facilities with electrical mutual influence, electronic devices can be connected via power cables. may not be able to supply power to operate Therefore, an optical power supply converter is used to send light to the vicinity of the electronic equipment via an optical fiber cable, photoelectrically convert the light, and supply electric power.
　光給電コンバータへの光入力に使用される一般的なシングルモード光ファイバケーブルは、光が伝搬するコアの直径が１０μｍ程度と小さい。そのため、例えば１Ｗを超える大きい光入力に対して、ファイバヒューズ現象によってコアが損傷する場合があり、光入力を大きさには限界がある。そのため、例えば特許文献１のように、複数の光ファイバケーブルを介して光を入力することにより、光入力を大きくして出力を大きくすることができる光給電コンバータが知られている。 A typical single-mode optical fiber cable used for optical input to an optical power supply converter has a small diameter of about 10 μm for the core through which light propagates. Therefore, for a large optical input exceeding, for example, 1 W, the core may be damaged by the fiber fuse phenomenon, and there is a limit to the amount of optical input. For this reason, an optical feeding converter is known that can increase the light input and the output by inputting light through a plurality of optical fiber cables, for example, as in Patent Document 1.
　一方、光給電コンバータに要求される出力電圧、出力電流は、出力先の電子機器類によって異なる場合が多い。そのため、例えば特許文献２のように、光給電コンバータの出力電圧を高くするために、アレイ状に分割された受光素子を直列に接続した光給電コンバータが知られている。 On the other hand, the output voltage and output current required for optical power supply converters often differ depending on the electronic devices to which they are output. For this reason, an optical power supply converter is known in which light receiving elements divided in an array are connected in series in order to increase the output voltage of the optical power supply converter, as disclosed in Patent Document 2, for example.
特許第６７９５８７０号公報Japanese Patent No. 6795870 米国特許出願公開第２０１１／０１０８０８１号明細書U.S. Patent Application Publication No. 2011/0108081
　しかし、光入力が大きくなると、光電変換する受光素子は、例えば発熱の影響によって光電変換効率が制限されてしまい、光給電コンバータの出力を大きくできない場合がある。そのため、特許文献１のような複数の光ファイバケーブルに対応するように、特許文献２のように複数の受光素子を装備した光給電コンバータを形成することが考えられる。しかし、複数の光ファイバケーブルを敷設し、これら複数の光ファイバケーブルの出力端を夫々対応する受光素子に合わせて固定する必要があるので容易ではない。 However, when the light input increases, the photoelectric conversion efficiency of the light-receiving element that performs photoelectric conversion is limited due to, for example, heat generation, and the output of the optical power supply converter may not be increased. Therefore, it is conceivable to form an optical feeding converter equipped with a plurality of light-receiving elements as in Patent Document 2 so as to correspond to a plurality of optical fiber cables as in Patent Document 1. However, it is not easy because it is necessary to lay a plurality of optical fiber cables and fix the output ends of the plurality of optical fiber cables to the respective corresponding light receiving elements.
　また、光給電コンバータは、出力先となる機器内に収容できるように小型化することが要求されている。しかし、光ファイバケーブルは、コアの周囲を覆うクラッドとクラッドの周囲を覆うシースを有し、さらに破損し難くするためにシースの周囲を保護材で覆うので、ある程度の太さがある。そのため、複数の光ファイバケーブルを接続する場合には、複数の光ファイバケーブルを並べることができるように複数の受光素子を離隔させて配置することになるので、光給電コンバータを小型化することは容易ではない。そして、出力先に応じた出力電圧、出力電流にするために、電圧、電流の変換装置が必要な場合には一層小型化が困難になる。 In addition, the optical power converter is required to be miniaturized so that it can be accommodated in the device that is the output destination. However, an optical fiber cable has a clad that surrounds the core and a sheath that surrounds the clad, and the sheath is covered with a protective material to prevent breakage, so it has a certain thickness. Therefore, when connecting a plurality of optical fiber cables, a plurality of light-receiving elements must be spaced apart so that the plurality of optical fiber cables can be arranged. It's not easy. Further, if a voltage/current conversion device is required in order to obtain an output voltage/current corresponding to the output destination, miniaturization becomes even more difficult.
　本発明の目的は、強い光の入射による受光素子の光電変換効率の低下を抑制すると共に、出力先に合わせた電圧、電流で出力されるように容易に構成することができる小型の光給電コンバータを提供することである。 SUMMARY OF THE INVENTION An object of the present invention is to provide a compact optical power supply converter that can be easily configured to suppress a decrease in the photoelectric conversion efficiency of a light-receiving element due to the incidence of strong light and to output voltage and current that match the output destination. is to provide
　請求項１の発明の光給電コンバータは、光ファイバケーブルを介して入射する光を電力に変換する複数の受光素子を有する光給電コンバータにおいて、前記光ファイバケーブルから入射する光の分波機能を備えた光導波路素子を有し、前記光導波路素子の複数の出口に対応するように前記複数の受光素子が配設され、前記複数の受光素子が、アノード電極及びカソード電極を夫々有し、前記複数の受光素子の前記アノード電極及び前記カソード電極に夫々接続された複数の導電性部材によって、前記複数の受光素子が直列、並列又は直並列に接続されて形成されたことを特徴としている。 An optical power supply converter according to the first aspect of the invention is an optical power supply converter having a plurality of light receiving elements for converting light incident through an optical fiber cable into electric power, and has a demultiplexing function for light incident from the optical fiber cable. a plurality of light receiving elements are disposed so as to correspond to a plurality of outlets of the optical waveguide element; the plurality of light receiving elements each have an anode electrode and a cathode electrode; The plurality of light receiving elements are connected in series, in parallel, or in series-parallel by a plurality of conductive members respectively connected to the anode electrode and the cathode electrode of the light receiving element.
　上記構成によれば、光給電コンバータは、光ファイバケーブルを介して入射する光を光導波路素子によって分波して複数の受光素子に入射させるので、強い光の入射による受光素子の光電変換効率の低下を抑制することができる。そして、この光給電コンバータは、複数の導電性部材によって複数の受光素子が直列、並列又は直並列に接続されるので、出力先に合わせた電圧、電流が出力されるように容易に形成することができる。また、光導波路素子によって光を分波するので光ファイバケーブルの接続数を少なくすることができ、複数の受光素子を複数の導電性部材で接続するので電圧、電流の変換装置が不要であるため、光給電コンバータを小型化することができる。 According to the above configuration, the optical power supply converter demultiplexes the light incident via the optical fiber cable by the optical waveguide element and makes the light incident on the plurality of light receiving elements. Decrease can be suppressed. In this optical power supply converter, since a plurality of light receiving elements are connected in series, parallel or series-parallel by a plurality of conductive members, it can be easily formed so as to output a voltage and a current suitable for the output destination. can be done. In addition, since light is demultiplexed by the optical waveguide element, the number of optical fiber cable connections can be reduced, and since a plurality of light-receiving elements are connected with a plurality of conductive members, a voltage/current conversion device is not required. , the optical feeding converter can be miniaturized.
　請求項２の発明の光給電コンバータは、請求項１の発明において、前記光導波路素子と前記複数の受光素子とが主面側に一体的に形成された半導体基板を有することを特徴としている。
　上記構成によれば、半導体基板に光導波路素子と複数の受光素子が、対応する光導波路素子の出口に位置合わせされ一体的に形成されているので、光導波路素子と受光素子の位置ずれが発生せず、入力された光を受光素子に入射させることができる。 According to a second aspect of the invention, there is provided an optical feeding converter according to the first aspect of the invention, further comprising a semiconductor substrate in which the optical waveguide element and the plurality of light receiving elements are integrally formed on the principal surface side.
According to the above configuration, since the optical waveguide element and the plurality of light receiving elements are aligned with the exits of the corresponding optical waveguide elements and integrally formed on the semiconductor substrate, misalignment occurs between the optical waveguide element and the light receiving element. The input light can be made incident on the light-receiving element.
　請求項３の発明の光給電コンバータは、請求項２の発明において、前記光導波路素子と前記複数の受光素子は、クラッド層上にコア層を有し、前記複数の受光素子は、前記コア層の上に光吸収層と半導体層を夫々有することを特徴としている。
　上記構成によれば、光導波路素子の複数の出口に対応する複数の受光素子を位置ずれが発生しないように容易に配設することができ、入力された光を受光素子に入射させることができる。 According to a third aspect of the invention, there is provided an optical power feeding converter according to the second aspect of the invention, wherein the optical waveguide element and the plurality of light receiving elements each have a core layer on a clad layer, and the plurality of light receiving elements each include the core layer. It is characterized in that it has a light absorption layer and a semiconductor layer, respectively.
According to the above configuration, the plurality of light receiving elements corresponding to the plurality of exits of the optical waveguide element can be easily arranged without positional deviation, and the input light can be made incident on the light receiving elements. .
　請求項４の発明の光給電コンバータは、請求項１の発明において、前記光導波路素子と前記複数の受光素子とが夫々主面側に一体的に形成された１対の半導体基板を有し、前記光導波路素子の光の入口同士が重なるように且つ前記複数の受光素子同士が重なるように、前記１対の半導体基板の前記主面側同士を対向状に結合させたことを特徴としている。
　上記構成によれば、光給電コンバータのサイズの増加を抑制しながら１本の光ファイバケーブルに対応する受光素子の数を増加させることができる。 According to a fourth aspect of the invention, there is provided an optical power feeding converter according to the first aspect of the invention, comprising a pair of semiconductor substrates in which the optical waveguide element and the plurality of light receiving elements are integrally formed on main surface sides thereof, The main surface sides of the pair of semiconductor substrates are coupled to face each other so that the light inlets of the optical waveguide elements overlap each other and the plurality of light receiving elements overlap each other.
According to the above configuration, it is possible to increase the number of light receiving elements corresponding to one optical fiber cable while suppressing an increase in the size of the optical power supply converter.
　本発明の光給電コンバータによれば、強い光の入射による受光素子の光電変換効率の低下を抑制すると共に、出力先に合わせた電圧、電流で出力されるように容易に構成することができる。 According to the optical power supply converter of the present invention, it is possible to suppress the deterioration of the photoelectric conversion efficiency of the light receiving element due to the incidence of strong light, and to easily configure the voltage and current to be output in accordance with the output destination.
本発明の実施例に係る光給電コンバータの平面図である。1 is a plan view of an optical feeding converter according to an embodiment of the present invention; FIG. 図１のII－II線断面図である。FIG. 2 is a sectional view taken along line II-II of FIG. 1; 図１のIII－III線断面図である。2 is a cross-sectional view taken along line III-III of FIG. 1; FIG. 図１のIV－IV線断面図である。FIG. 2 is a cross-sectional view taken along line IV-IV of FIG. 1; 複数の受光素子の並列接続の例を示す図である。It is a figure which shows the example of parallel connection of several light receiving element. 複数の受光素子の直並列接続の例を示す図である。。It is a figure which shows the example of the serial-parallel connection of several light receiving element. . フォトダイオード形成用のエッチングマスク形成工程を示す図２相当図である。FIG. 3 is a view equivalent to FIG. 2 showing an etching mask forming process for forming a photodiode; 光導波路形成用のエッチングマスク形成工程を示す図２相当図である。FIG. 3 is a view equivalent to FIG. 2 showing an etching mask forming process for forming an optical waveguide; 受光素子分離用のエッチングマスク形成工程を示す図２相当図である。FIG. 3 is a view corresponding to FIG. 2 showing an etching mask forming process for light receiving element isolation; ＭＭＩ型光導波路素子を備えた光給電コンバータの平面図である。FIG. 2 is a plan view of an optical feeding converter provided with an MMI optical waveguide device; 受光素子の変更例を示す図２相当図である。FIG. 3 is a view equivalent to FIG. 2 showing a modified example of a light receiving element; 受光素子の変更例を示す図３相当図である。FIG. 4 is a view equivalent to FIG. 3 showing a modification of a light receiving element; ２つの光給電コンバータを重ね合わせる説明図である。FIG. 3 is an explanatory diagram of superimposing two optical feeding converters; 重ね合わせて形成された光給電コンバータの斜視図である。FIG. 11 is a perspective view of optical power converters formed in a superimposed manner;
　以下、本発明を実施するための形態について実施例に基づいて説明する。 Hereinafter, the mode for carrying out the present invention will be described based on examples.
　図１～図４に示すように、光給電コンバータ１は、半導体基板２の主面２ａ側に、１つの入口３と複数（例えば４つ）の出口４ａ～４ｄを有する光導波路素子５と、光導波路素子５の複数の出口４ａ～４ｄに対応するように配設された複数の受光素子６ａ～６ｄを有する。半導体基板２は、例えばＩＩＩ－Ｖ属半導体の半絶縁性のＩｎＰ基板である。 As shown in FIGS. 1 to 4, the optical power converter 1 includes an optical waveguide element 5 having one inlet 3 and a plurality of (for example, four) outlets 4a to 4d on the main surface 2a side of the semiconductor substrate 2, It has a plurality of light-receiving elements 6a-6d arranged to correspond to the plurality of outlets 4a-4d of the optical waveguide element 5. FIG. The semiconductor substrate 2 is, for example, a semi-insulating InP substrate of a III-V group semiconductor.
　光導波路素子５は光の分波機能を有し、入口３から入射する光を途中で２つに均等に分波し、この分けられた光を夫々２つに均等に分波するように、光導波路が２段階で対称に分岐するように形成されている。この光導波路素子５は、半導体基板２の主面２ａに形成されたクラッド層７上にコア層８が形成され、このコア層８が入口３から２段階で分岐されて複数の出口４ａ～４ｄに連なる光導波路になっている。クラッド層７は、例えばｎ型半導体のｎ－ＩｎＰ層である。コア層８は、例えばＩｎＧａＡｓＰ層である。 The optical waveguide element 5 has a light splitting function, splits the light incident from the entrance 3 equally into two on the way, and equally splits the split light into two. An optical waveguide is formed to branch symmetrically in two steps. This optical waveguide element 5 has a core layer 8 formed on a cladding layer 7 formed on a main surface 2a of a semiconductor substrate 2. The core layer 8 is branched from an inlet 3 in two stages to form a plurality of outlets 4a to 4d. It is an optical waveguide that continues to The cladding layer 7 is, for example, an n-InP layer of an n-type semiconductor. The core layer 8 is, for example, an InGaAsP layer.
　コア層８に接するクラッド層７及び空気は、コア層８よりも屈折率が小さい。そのため、入口３からコア層８（光導波路）に入射させた光はクラッド層７又は空気との界面で全反射しながら進行する。クラッド層７の厚さは、例えば２μｍである。光導波路であるコア層８は、光の進行方向と直交する断面において、厚さが例えば３μｍ、幅が例えば３μｍである。 The cladding layer 7 and air in contact with the core layer 8 have a lower refractive index than the core layer 8 . Therefore, the light incident on the core layer 8 (optical waveguide) from the inlet 3 travels while being totally reflected at the interface with the cladding layer 7 or air. The clad layer 7 has a thickness of 2 μm, for example. The core layer 8, which is an optical waveguide, has a thickness of, for example, 3 μm and a width of, for example, 3 μm in a cross section perpendicular to the traveling direction of light.
　出口４ａ～４ｄに対応するように、受光素子６ａ～６ｄが配設されている。受光素子６ａ～６ｄは、ｎ型半導体のクラッド層７上のコア層８の上に、光吸収層９とｐ型半導体層１０（半導体層）を有する。このｐ型半導体層１０と、ｎ型半導体のクラッド層７とで光吸収層９とコア層８を挟む構造によって、ＰＩＮ型フォトダイオードである受光素子６ａ～６ｄが形成されている。光吸収層９は例えばＩｎＧａＡｓ層であり、その厚さと幅が夫々例えば３μｍ、光の進行方向に沿う長さが例えば１５μｍである。ｐ型半導体層１０は例えばｐ－ＩｎＰ層であり、その厚さが例えば１μｍ、幅と長さが光吸収層９と同等である。 Light receiving elements 6a to 6d are arranged so as to correspond to the exits 4a to 4d. The light receiving elements 6a to 6d have a light absorption layer 9 and a p-type semiconductor layer 10 (semiconductor layer) on a core layer 8 on a clad layer 7 of an n-type semiconductor. Light-receiving elements 6a to 6d, which are PIN-type photodiodes, are formed by the structure in which the light absorption layer 9 and the core layer 8 are sandwiched between the p-type semiconductor layer 10 and the clad layer 7 of the n-type semiconductor. The light absorption layer 9 is, for example, an InGaAs layer, and has a thickness and width of 3 μm, for example, and a length of 15 μm, for example, along the traveling direction of light. The p-type semiconductor layer 10 is, for example, a p-InP layer, and has a thickness of, for example, 1 μm, and a width and length equivalent to those of the light absorption layer 9 .
　例えばシングルモードの光ファイバケーブルＯＣの出射端から光導波路素子５の入口３に矢印Ｌ１で示すように光が入力される。この光は、空気又はクラッド層７との界面で全反射しながらコア層８を進行して、矢印Ｌ２で示すように光導波路素子５の例えば出口４ａに到達し、受光素子６ａに入射する。光導波路素子５は光を均等に分けるので、他の出口４ｂ～４ｄにも光が到達し、対応する受光素子６ｂ～６ｄに入射する。 For example, light is input from the output end of a single-mode optical fiber cable OC to the entrance 3 of the optical waveguide element 5 as indicated by an arrow L1. This light travels through the core layer 8 while being totally reflected at the interface with the air or the clad layer 7, reaches, for example, the exit 4a of the optical waveguide element 5 as indicated by arrow L2, and enters the light receiving element 6a. Since the optical waveguide element 5 equally divides the light, the light reaches the other outlets 4b-4d and enters the corresponding light-receiving elements 6b-6d.
　受光素子６ａ～６ｄは、コア層８と光吸収層９との界面において、コア層８を進行する光が波動性によって光吸収層９内に光の波長程度侵入するエバネッセント光を、電力（光電流）に変換する。尚、入力される光は、波長が例えば１．３μｍ程度の赤外光であり、一定の強さで連続的に入力され、受光素子６ａ～６ｄで一定の直流電力に変換される。 At the interface between the core layer 8 and the light absorption layer 9, the light receiving elements 6a to 6d emit evanescent light that penetrates into the light absorption layer 9 due to the wave nature of the light traveling through the core layer 8 by the wavelength of the light. current). The input light is infrared light with a wavelength of about 1.3 μm, for example, and is continuously input at a constant intensity and converted into constant DC power by the light receiving elements 6a to 6d.
　ｐ型半導体層１０上には、このｐ型半導体層１０に接続するアノード電極１１（例えばチタン、白金、金を含む金属膜）が形成されている。ｎ型半導体層であるクラッド層７には、このｎ型半導体層に接続するカソード電極１２（例えば金、ゲルマニウム、ニッケル、チタンを含む金属膜）が形成されている。 An anode electrode 11 (for example, a metal film containing titanium, platinum and gold) is formed on the p-type semiconductor layer 10 and connected to the p-type semiconductor layer 10 . A cathode electrode 12 (for example, a metal film containing gold, germanium, nickel and titanium) connected to the n-type semiconductor layer is formed on the clad layer 7 which is an n-type semiconductor layer.
　クラッド層７は、光導波路素子５から複数の受光素子６ａ～６ｄまでつながっているが、複数の受光素子６ａ～６ｄを電気的に分離するために、これら受光素子６ａ～６ｄの間でクラッド層７が除去されている。半導体基板２の主面２ａには、光給電コンバータ１からの出力端子として、受光素子６ａのアノード電極１１に接続されたアノード端子部１３と、受光素子６ｄのカソード電極１２に接続されたカソード端子部１４が形成されている。アノード端子部１３及びカソード端子部１４は、例えばチタン、白金、金を含む金属膜である。 The clad layer 7 extends from the optical waveguide element 5 to the plurality of light receiving elements 6a to 6d. 7 has been removed. On the main surface 2a of the semiconductor substrate 2, as output terminals from the optical power supply converter 1, an anode terminal portion 13 connected to the anode electrode 11 of the light receiving element 6a and a cathode terminal connected to the cathode electrode 12 of the light receiving element 6d are provided. A portion 14 is formed. The anode terminal portion 13 and the cathode terminal portion 14 are metal films containing, for example, titanium, platinum, and gold.
　複数の受光素子６ａ～６ｄは、例えば金ワイヤのような複数の導電性部材１５によって直列に接続されている。そして、直列接続された複数の受光素子６ａ～６ｄの一端の受光素子６ａのアノード電極１１が導電性部材１６によってアノード端子部１３に接続され、他端の受光素子６ｄのカソード電極１２が導電性部材１７によってカソード端子部１４に接続されている。尚、導電性部材１５，１６，１７の接続態様によって、アノード端子部１３とカソード端子部１４を入れ替えることができる。 A plurality of light receiving elements 6a to 6d are connected in series by a plurality of conductive members 15 such as gold wires. The anode electrode 11 of the light receiving element 6a at one end of the plurality of light receiving elements 6a to 6d connected in series is connected to the anode terminal portion 13 by the conductive member 16, and the cathode electrode 12 of the light receiving element 6d at the other end is conductive. It is connected to the cathode terminal portion 14 by a member 17 . The anode terminal portion 13 and the cathode terminal portion 14 can be interchanged depending on the connection mode of the conductive members 15, 16, and 17. FIG.
　複数の受光素子６ａ～６ｄが複数の導電性部材１５によって接続されるので、図１のように直列に接続するだけでなく、図５のように並列に接続することもでき、図６のように直列接続と並列接続を組み合わせて直並列に接続することもできる。従って、光給電コンバータ１が接続先に応じた電圧、電流で電力を供給するように、複数の受光素子６ａ～６ｄを接続することができる。 Since a plurality of light receiving elements 6a to 6d are connected by a plurality of conductive members 15, they can be connected not only in series as shown in FIG. 1, but also in parallel as shown in FIG. It is also possible to connect in series and parallel by combining series connection and parallel connection. Therefore, the plurality of light receiving elements 6a to 6d can be connected so that the optical power supply converter 1 supplies power with voltage and current corresponding to the connection destination.
　次に、光給電コンバータ１の形成方法について説明する。
　図７のように、ウェハ状の半導体基板２の主面２ａ側に、例えばエピタキシャル成長法のような公知の成膜方法によって、クラッド層７（ｎ型半導体層）、コア層８、光吸収層９、ｐ型半導体層１０を形成し、例えば公知のフォトリソグラフィ法によってフォトダイオード形成用のエッチングマスク２１を形成する（フォトダイオード形成用のエッチングマスク形成工程）。そして、例えばＲＩＥ法（反応性イオンエッチング法）のような公知のエッチング方法によって、ｐ型半導体層１０と光吸収層９をエッチングし、エッチングマスク２１を除去する。 Next, a method for forming the optical power supply converter 1 will be described.
As shown in FIG. 7, a cladding layer 7 (n-type semiconductor layer), a core layer 8, and a light absorption layer 9 are formed on the main surface 2a side of a wafer-shaped semiconductor substrate 2 by a known film formation method such as an epitaxial growth method. , a p-type semiconductor layer 10 is formed, and an etching mask 21 for forming a photodiode is formed by, for example, a known photolithography method (etching mask forming step for forming a photodiode). Then, the p-type semiconductor layer 10 and the light absorption layer 9 are etched by a known etching method such as the RIE method (reactive ion etching method), and the etching mask 21 is removed.
　次に図８のように、公知のフォトリソグラフィ法によって光導波路形成用のエッチングマスク２２を形成する（光導波路形成用のエッチングマスク形成工程）。そして例えばＲＩＥ法のような公知のエッチング方法によって、コア層８をエッチングして光導波路素子５を形成し、エッチングマスク２２を除去する。 Next, as shown in FIG. 8, an etching mask 22 for forming an optical waveguide is formed by a known photolithography method (etching mask forming step for forming an optical waveguide). Then, the core layer 8 is etched by a known etching method such as RIE to form the optical waveguide element 5, and the etching mask 22 is removed.
　次に図９のように、受光素子分離用のエッチングマスク２３を公知のフォトリソグラフィ法によって形成する（受光素子分離用のエッチングマスク形成工程）。そして、例えばＲＩＥ法のような公知のエッチング方法によって、クラッド層７をエッチングして半導体基板２の主面２ａを露出させ、エッチングマスク２３を除去する。このとき、複数の受光素子６ａ～６ｄの間のクラッド層７が除去される（図１、図３参照）。 Next, as shown in FIG. 9, an etching mask 23 for light-receiving element isolation is formed by a known photolithography method (etching mask forming process for light-receiving element isolation). Then, the cladding layer 7 is etched by a known etching method such as RIE to expose the main surface 2a of the semiconductor substrate 2, and the etching mask 23 is removed. At this time, the cladding layer 7 between the plurality of light receiving elements 6a to 6d is removed (see FIGS. 1 and 3).
　最後に、例えば蒸着法によって、アノード電極１１、カソード電極１２、アノード端子部１３、カソード端子部１４を形成するための金属膜を夫々所定の領域に選択的に堆積し、劈開又は切断により個片化して平面視矩形の光給電コンバータ１を形成し、導電性部材１５，１６，１７による接続を施す（例えば図１参照）。光導波路素子５の入口３には、例えばシリコン窒化膜のような反射防止膜が形成されることが好ましい。尚、図示を省略するが、この光給電コンバータ１は、光導波路素子５の入口３に対応する位置に光ファイバケーブルＯＣの出射端を固定する固定機構と、アノード端子部１３、カソード端子部１４から外部に電力を供給するための出力端子を備えたケースに収容される。 Finally, metal films for forming the anode electrode 11, the cathode electrode 12, the anode terminal portion 13, and the cathode terminal portion 14 are selectively deposited on predetermined regions by, for example, a vapor deposition method, and separated into individual pieces by cleaving or cutting. 1 to form an optical power supply converter 1 having a rectangular shape in a plan view, and are connected by conductive members 15, 16, and 17 (for example, see FIG. 1). An antireflection film such as a silicon nitride film is preferably formed at the entrance 3 of the optical waveguide element 5 . Although illustration is omitted, the optical power supply converter 1 includes a fixing mechanism for fixing the output end of the optical fiber cable OC at a position corresponding to the entrance 3 of the optical waveguide element 5, an anode terminal portion 13, a cathode terminal portion 14, and a fixing mechanism. It is housed in a case with an output terminal for supplying power to the outside.
　図１０に示すように、光導波路素子５はＭＭＩ（Multi-Mode Interference）型導波路素子であってもよい。また、例えば図１１、図１２に示すように、光導波路素子２５の出口２４ａ～２４ｄにおいて、矢印Ｌ２で示すコア層２８（ＩｎＧａＡｓＰ層）の光の進行方向端部に光吸収層２９（ＩｎＧａＡｓ層）が接続された受光素子２６ａ～２６ｄが形成されてもよい。ここでは、コア層２８を上下に挟むクラッド層２７ａ，２７ｂとしてノンドープのＩｎＰ層を有する光導波路素子２５が形成されている。また、ｎ型半導体層３０（ｎ－ＩｎＰ層）とｐ型半導体層３１（ｐ－ＩｎＰ層）とで光吸収層２９（ＩｎＧａＡｓ層）を挟んだＰＩＮ型フォトダイオードが受光素子２６ａ～２６ｄになっている。光がコア層２８から光吸収層２９に直接入射するので、光電変換効率の向上が期待できる。 As shown in FIG. 10, the optical waveguide element 5 may be an MMI (Multi-Mode Interference) type waveguide element. For example, as shown in FIGS. 11 and 12, at the exits 24a to 24d of the optical waveguide element 25, the light absorption layer 29 (InGaAs layer ) may be formed. Here, an optical waveguide element 25 having non-doped InP layers as clad layers 27a and 27b sandwiching a core layer 28 is formed. PIN photodiodes in which a light absorption layer 29 (InGaAs layer) is sandwiched between an n-type semiconductor layer 30 (n-InP layer) and a p-type semiconductor layer 31 (p-InP layer) are used as light receiving elements 26a to 26d. ing. Since light directly enters the light absorption layer 29 from the core layer 28, an improvement in photoelectric conversion efficiency can be expected.
　図１３、図１４に示すように、例えば図１の光給電コンバータ１を第１光給電コンバータ１ａとする。そして、複数の受光素子６ａ～６ｄの接続が、第１光給電コンバータ１ａと鏡像関係になるように複数の導電性部材１５，１６，１７により接続した光給電コンバータ１を第２光給電コンバータ１ｂとする。これら第１、第２光給電コンバータ１ａ，１ｂの光導波路素子５の入口３同士が重なるように且つ第１、第２光給電コンバータ１ａ，１ｂの対応する受光素子６ａ～６ｄが重なるように、双方の半導体基板２の主面２ａ側を対向状に結合させる。 As shown in FIGS. 13 and 14, for example, the optical feeding converter 1 in FIG. 1 is assumed to be a first optical feeding converter 1a. A second optical feed converter 1b is connected to the optical feed converter 1 by a plurality of conductive members 15, 16, and 17 so that the connections of the plurality of light receiving elements 6a to 6d are in a mirror image relationship with the first optical feed converter 1a. and so that the inlets 3 of the optical waveguide elements 5 of the first and second optical feed converters 1a and 1b overlap each other and the corresponding light receiving elements 6a to 6d of the first and second optical feed converters 1a and 1b overlap each other. The major surface 2a sides of both semiconductor substrates 2 are joined in a facing manner.
　このように１対の半導体基板２を結合することにより、サイズの増加を抑制しながら１本の光ファイバケーブルＯＣに対応する受光素子の数を増加させた光給電コンバータ４１を形成することができる。また、導電性部材１５，１６，１７によって第１、第２光給電コンバータ１ａ，１ｂを作り分けることができるので、光給電コンバータ４１を容易に形成することができる。 By coupling the pair of semiconductor substrates 2 in this manner, it is possible to form the optical power supply converter 41 in which the number of light receiving elements corresponding to one optical fiber cable OC is increased while suppressing an increase in size. . Moreover, since the first and second optical power supply converters 1a and 1b can be separately manufactured by the conductive members 15, 16 and 17, the optical power supply converter 41 can be easily formed.
　アノード端子部１３同士とカソード端子部１４同士は、例えば導電性ペースト４２によって夫々接続、結合され、クラッド層７同士が例えば接着剤４３によって結合される。また、図示を省略するが、例えば第１光給電コンバータ１ａの受光素子６ａのアノード電極１１と、これに対応する第２光給電コンバータ１ｂの受光素子６ｄのアノード電極１１とが導電性ペーストによって接続される。他のアノード電極同士も同様である。アノード端子部１３同士及びカソード端子部１４同士の結合時に、夫々リードフレームを挟むようにして外部出力端子としてもよい。光給電コンバータ４１は、第１、第２光給電コンバータ１ａ，１ｂが並列に接続されることになるので、出力電圧が維持されたまま出力電流を増加させることができる。 The anode terminal portions 13 and the cathode terminal portions 14 are connected and bonded to each other by, for example, a conductive paste 42, and the clad layers 7 are bonded to each other by an adhesive 43, for example. Also, although illustration is omitted, for example, the anode electrode 11 of the light receiving element 6a of the first optical feeding converter 1a and the corresponding anode electrode 11 of the light receiving element 6d of the second optical feeding converter 1b are connected by a conductive paste. be done. The same applies to other anode electrodes. When the anode terminal portions 13 and the cathode terminal portions 14 are connected to each other, the lead frames may be sandwiched between them to form external output terminals. Since the first and second optical power converters 1a and 1b are connected in parallel, the optical power converter 41 can increase the output current while maintaining the output voltage.
　複数の受光素子６ａ～６ｄは光導波路素子５よりも主面２ａから突出しているので、第１、第２光給電コンバータ１ａ，１ｂの光導波路素子５同士は入口３以外では離隔している。１対の半導体基板２がスペーサ部材を介して結合された光給電コンバータ４１が形成されてもよい。 Since the plurality of light receiving elements 6a to 6d protrude from the main surface 2a more than the optical waveguide element 5, the optical waveguide elements 5 of the first and second optical feed converters 1a and 1b are separated except for the entrance 3. An optical power supply converter 41 may be formed in which a pair of semiconductor substrates 2 are coupled via a spacer member.
　上記光給電コンバータ１，４１の作用、効果について説明する。
　光給電コンバータ１は、光ファイバケーブルＯＣを介して入射する光を光導波路素子５によって分波して複数の受光素子６ａ～６ｄに入射させるので、強い光の入射による受光素子６ａ～６ｄの光電変換効率の低下を抑制することができる。そして、複数の導電性部材１５、１６，１７によって複数の受光素子６ａ～６ｄが直列、並列又は直並列に接続されるので、出力先に合わせた電圧、電流が出力されるように光給電コンバータ１を容易に形成することができる。また、光導波路素子５によって光を分波するので光ファイバケーブルＯＣの接続数を少なくすることができ、複数の受光素子６ａ～６ｄを複数の導電性部材１５で接続するので電圧、電流の変換装置が不要であるため、光給電コンバータ１を小型化することができる。 The actions and effects of the optical power supply converters 1 and 41 will be described.
The optical power supply converter 1 demultiplexes the light incident via the optical fiber cable OC by the optical waveguide element 5 and makes the light incident on the plurality of light receiving elements 6a to 6d. A decrease in conversion efficiency can be suppressed. Since a plurality of light-receiving elements 6a to 6d are connected in series, parallel or series-parallel by a plurality of conductive members 15, 16 and 17, the optical power supply converter can output a voltage and a current suitable for the output destination. 1 can be easily formed. In addition, since light is demultiplexed by the optical waveguide element 5, the number of connections of the optical fiber cables OC can be reduced. Since no device is required, the size of the optical power supply converter 1 can be reduced.
　その上、半導体基板２に光導波路素子５と複数の受光素子６ａ～６ｄが、対応する光導波路素子５の出口４ａ～４ｄに位置合わせされ一体的に形成されているので、光導波路素子５と受光素子６ａ～６ｄの位置ずれが発生せず、入力された光を受光素子６ａ～６ｄに入射させることができる。 Moreover, the optical waveguide element 5 and the plurality of light receiving elements 6a to 6d are aligned with the corresponding outlets 4a to 4d of the optical waveguide element 5 and integrally formed on the semiconductor substrate 2. The input light can be incident on the light receiving elements 6a to 6d without positional deviation of the light receiving elements 6a to 6d.
　光導波路素子５と複数の受光素子６ａ～６ｄは、クラッド層７上にコア層８を夫々有し、複数の受光素子６ａ～６ｄは、コア層８の上に光吸収層９と半導体層としてｐ型半導体層１０を有する。従って、光導波路素子５の複数の出口４ａ～４ｄに対応する複数の受光素子６ａ～６ｄを位置ずれが発生しないように容易に配設することができ、入力された光を受光素子６ａ～６ｄに入射させることができる。 The optical waveguide element 5 and the plurality of light receiving elements 6a to 6d each have a core layer 8 on the cladding layer 7, and the plurality of light receiving elements 6a to 6d have a light absorption layer 9 and a semiconductor layer on the core layer 8. It has a p-type semiconductor layer 10 . Therefore, the plurality of light receiving elements 6a to 6d corresponding to the plurality of outlets 4a to 4d of the optical waveguide element 5 can be easily arranged without positional deviation, and the input light can be detected by the light receiving elements 6a to 6d. can be made incident on
　また、１対の光給電コンバータ１を組み合わせた光給電コンバータ４１は、光導波路素子５の光の入口３同士が重なるように且つ複数の受光素子６ａ～６ｄ同士が重なるように、１対の半導体基板２の主面２ａ側同士を対向状に結合させている。従って、光給電コンバータ４１のサイズの増加を抑制して小型に維持しながら、１本の光ファイバケーブルＯＣに対応する受光素子６ａ～６ｄの数を増加させることができる。 An optical feed converter 41 combining a pair of optical feed converters 1 includes a pair of semiconductors so that the light inlets 3 of the optical waveguide element 5 overlap each other and the plurality of light receiving elements 6a to 6d overlap each other. The main surfaces 2a sides of the substrates 2 are joined to face each other. Therefore, it is possible to increase the number of light receiving elements 6a to 6d corresponding to one optical fiber cable OC while suppressing an increase in the size of the optical power supply converter 41 and maintaining a small size.
　光導波路素子５は、出口の数が４つに限定されるものではなく、例えば２つ又は８つ以上の出口を有していてもよい。ＩＶ族半導体であるＳｉ基板上に、例えばクラッド層がＳｉＯ２層であり、コア層がＳｉ層である光導波路素子と、受光素子とを一体的に形成して光給電コンバータを形成することもできる。その他、当業者であれば、本発明の趣旨を逸脱することなく、上記実施形態に種々の変更を付加した形態で実施可能であり、本発明はその種の変更形態も包含するものである。 The number of exits of the optical waveguide element 5 is not limited to four, and may have, for example, two or eight or more exits. An optical power supply converter can also be formed by integrally forming an optical waveguide device having, for example, a cladding layer made of SiO2 and a core layer made of Si, and a light receiving device on a Si substrate, which is a Group IV semiconductor. . In addition, those skilled in the art can implement various modifications to the above embodiment without departing from the scope of the present invention, and the present invention includes such modifications.
１　　：光給電コンバータ
１ａ　：第１光給電コンバータ
１ｂ　：第２光給電コンバータ
２　　：半導体基板
２ａ　：主面
３　　：入口
４ａ～４ｄ：出口
５　　：光導波路素子
６ａ～６ｄ：受光素子
７　　：クラッド層
８　　：コア層
９　　：光吸収層
１０　：ｐ型半導体層（半導体層）
１１　：アノード電極
１２　：カソード電極
１３　：アノード端子部
１４　：カソード端子部
１５，１６，１７：導電性部材
２１，２２，２３：エッチングマスク
２５　：光導波路素子
２６　：受光素子
２７ａ，２７ｂ：クラッド層
２８　：コア層
２９　：光吸収層
３０　：ｎ型半導体層
３１　：ｐ型半導体層
４１　：光給電コンバータ
ＯＣ　：光ファイバケーブル Reference Signs List 1: optical feed converter 1a: first optical feed converter 1b: second optical feed converter 2: semiconductor substrate 2a: main surface 3: inlets 4a to 4d: outlet 5: optical waveguide elements 6a to 6d: light receiving element 7: clad layer 8: core layer 9: light absorption layer 10: p-type semiconductor layer (semiconductor layer)
11: Anode electrode 12: Cathode electrode 13: Anode terminal portion 14: Cathode terminal portion 15, 16, 17: Conductive members 21, 22, 23: Etching mask 25: Optical waveguide element 26: Light receiving element 27a, 27b: Clad layer 28: core layer 29: light absorption layer 30: n-type semiconductor layer 31: p-type semiconductor layer 41: optical power supply converter OC: optical fiber cable

Claims (4)

  1. 　光ファイバケーブルを介して入射する光を電力に変換する複数の受光素子を有する光給電コンバータにおいて、
    　前記光ファイバケーブルから入射する光の分波機能を備えた光導波路素子を有し、
    　前記光導波路素子の複数の出口に対応するように前記複数の受光素子が配設され、
    　前記複数の受光素子が、アノード電極及びカソード電極を夫々有し、
    　前記複数の受光素子の前記アノード電極及び前記カソード電極に夫々接続された複数の導電性部材によって、前記複数の受光素子が直列、並列又は直並列に接続されて形成されたことを特徴とする光給電コンバータ。     In an optical power supply converter having a plurality of light receiving elements that convert light incident through an optical fiber cable into electric power,
    Having an optical waveguide element having a demultiplexing function of light incident from the optical fiber cable,
    The plurality of light receiving elements are arranged so as to correspond to the plurality of exits of the optical waveguide element,
    The plurality of light receiving elements each have an anode electrode and a cathode electrode,
    Light characterized in that the plurality of light receiving elements are connected in series, in parallel, or in series-parallel by a plurality of conductive members respectively connected to the anode electrodes and the cathode electrodes of the plurality of light receiving elements. power supply converter.
  2. 　前記光導波路素子と前記複数の受光素子とが主面側に一体的に形成された半導体基板を有することを特徴とする請求項１に記載の光給電コンバータ。 The optical feeding converter according to claim 1, further comprising a semiconductor substrate in which the optical waveguide element and the plurality of light receiving elements are integrally formed on the principal surface side.
  3. 　前記光導波路素子と前記複数の受光素子は、クラッド層上にコア層を有し、
    　前記複数の受光素子は、前記コア層の上に光吸収層と半導体層を夫々有することを特徴とする請求項２に記載の光給電コンバータ。     The optical waveguide element and the plurality of light receiving elements each have a core layer on a clad layer,
    3. An optical feeding converter according to claim 2, wherein said plurality of light receiving elements each have a light absorption layer and a semiconductor layer on said core layer.
  4. 　前記光導波路素子と前記複数の受光素子とが夫々主面側に一体的に形成された１対の半導体基板を有し、
    　前記光導波路素子の光の入口同士が重なるように且つ前記複数の受光素子同士が重なるように、前記１対の半導体基板の前記主面側同士を対向状に結合させたことを特徴とする請求項２に記載の光給電コンバータ。     a pair of semiconductor substrates in which the optical waveguide element and the plurality of light receiving elements are integrally formed on main surface sides, respectively;
    The main surface sides of the pair of semiconductor substrates are coupled to face each other such that the light inlets of the optical waveguide element overlap each other and the plurality of light receiving elements overlap each other. Item 3. The optical power supply converter according to item 2.
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