WO2023108786A1 - 一种显示面板及其温度调控方法 - Google Patents

一种显示面板及其温度调控方法 Download PDF

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Publication number
WO2023108786A1
WO2023108786A1 PCT/CN2021/140817 CN2021140817W WO2023108786A1 WO 2023108786 A1 WO2023108786 A1 WO 2023108786A1 CN 2021140817 W CN2021140817 W CN 2021140817W WO 2023108786 A1 WO2023108786 A1 WO 2023108786A1
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Prior art keywords
layer
substrate
electrode
disposed
light
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PCT/CN2021/140817
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English (en)
French (fr)
Inventor
刘生泽
阮崇鹏
张春鹏
鲜于文旭
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US17/623,599 priority Critical patent/US12369482B2/en
Publication of WO2023108786A1 publication Critical patent/WO2023108786A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/2033—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element
    • G05D23/2034—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element the sensing element being a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the present application relates to the field of display technology, in particular to a display panel and a temperature control method thereof.
  • Organic light-emitting display device (English full name: Organic Light-Emitting Diode, referred to as OLED) is also known as organic electro-laser display device, organic light-emitting semiconductor.
  • OLED has the advantages of low voltage demand, high power saving efficiency, fast response, light weight, thin thickness, simple structure, low cost, wide viewing angle, almost infinitely high contrast, low power consumption, and extremely high response speed.
  • One of the most important display technologies One of the most important display technologies.
  • the temperature of the display panel may change. However, if the temperature of the display panel is too high or too low, the luminous effect of the display panel will be affected, and the service life of the display panel will be reduced. At present, it is impossible to monitor and control the temperature of the display panel in real time.
  • the purpose of the present invention is to provide a display panel and its temperature control method, which can solve the problem that the temperature in the existing display panel cannot be monitored and controlled in real time.
  • the present invention provides a display panel, which includes: a substrate; a thin film transistor layer disposed on the substrate; a first planar layer disposed on the side of the thin film transistor layer away from the substrate On the surface; a photodetector, which includes: a first electrode, disposed on the surface of the first flat layer away from the substrate; an active layer, disposed on the side of the first electrode away from the substrate and a second electrode disposed on the surface of the active layer away from the substrate; a first light-shielding layer covering the active layer away from the substrate; and a second light-shielding layer , disposed on the surface of the first electrode away from the substrate, the first light-shielding layer is provided with a first opening at a position corresponding to the first electrode; wherein the active layer is disposed on inside the first opening.
  • the display panel further includes: an anode disposed on a side of the first flat layer away from the substrate; a pixel definition layer disposed on a surface of the anode on a side far away from the substrate, the The pixel definition layer is provided with a second opening at a position corresponding to the anode; the light-emitting layer is arranged on the surface of the anode in the second opening away from the substrate; and the cathode is arranged on the The light-emitting layer is on the surface of the side away from the substrate; wherein, the anode and the first electrode are opaque electrodes.
  • the second electrode is a light-transmitting electrode
  • the first light-shielding layer is disposed on a side of the second electrode away from the substrate.
  • the second electrode is an opaque electrode, and the second electrode is multiplexed as the first light-shielding layer.
  • the anode is disposed on a side of the photodetector away from the substrate.
  • the display panel further includes: a protective layer, disposed between the second electrode and the anode, and extending to cover the surface of the second light-shielding layer on a side away from the substrate; Two planar layers are arranged between the protective layer and the anode.
  • the projection of the photodetector on the substrate is separated from the projection of the anode on the substrate, and the protection layer is disposed between the first light-shielding layer and the anode.
  • the projection of the photodetector on the substrate falls within the projection of the anode on the substrate, and the anode is multiplexed as the first light-shielding layer.
  • anode and the first electrode are arranged in the same layer.
  • the cathode is multiplexed as the second electrode.
  • the pixel definition layer is made of a light-shielding material, and the pixel definition layer is multiplexed as the second light-shielding layer.
  • the thin film transistor layer includes: a first thin film transistor device, which includes: a first source, electrically connected to the first electrode of the photodetector; and a first drain, electrically connected to a control chip.
  • the photodetector further includes: a first transport layer disposed between the first electrode and the active layer; and a second transport layer disposed between the active layer and the second electrode between.
  • the display panel further includes: a buffer layer disposed between the substrate and the thin film transistor.
  • the present invention provides a method for controlling the temperature of a display panel according to the present invention, which includes the following steps: obtaining dark current values of photodetectors at different temperatures to obtain a temperature-current fitting curve; A thin film transistor device obtains the real-time dark current value of the photodetector; according to the real-time dark current value, obtains the real-time temperature value corresponding to the real-time dark current value from the temperature-current fitting curve; and judges the real-time temperature Whether the value is within a preset temperature range, and when the real-time temperature value exceeds the preset temperature range, temperature regulation is performed.
  • the display panel includes: a substrate; a thin film transistor layer disposed on the substrate; a first planar layer disposed on the surface of the thin film transistor layer away from the substrate; a photodetector comprising: An electrode, arranged on the surface of the first flat layer away from the substrate; an active layer, arranged on the surface of the first electrode away from the substrate; and a second electrode, arranged on On the surface of the active layer away from the substrate; a first light-shielding layer covering the side of the active layer away from the substrate; and a second light-shielding layer disposed on the first electrode away from the On the surface of one side of the substrate, the first light-shielding layer is provided with a first opening at a position corresponding to the first electrode; wherein the active layer is disposed in the first opening.
  • the active layer of the detector By setting the first light-shielding layer on the side of the active layer of the photodetector away from the substrate, and setting the second light-shielding layer on the side of the active layer of the photodetector, thereby preventing light from entering the inside of the active layer of the photodetector, so that the photoelectric
  • the active layer of the detector generates a dark current, and the temperature of the photodetector is monitored in real time by using the relationship between the dark current of the photodetector and the temperature.
  • FIG. 1 is a schematic structural diagram of a display panel according to Embodiment 1 of the present invention.
  • Fig. 2 is the structural representation of photodetector of the present invention
  • Fig. 3 is a flow chart of the temperature control method of the display panel of the present invention.
  • FIG. 4 is a schematic structural diagram of a display panel according to Embodiment 2 of the present invention.
  • FIG. 5 is a schematic structural diagram of a display panel according to Embodiment 3 of the present invention.
  • Second shading layer 8. Anode
  • the first active layer 312.
  • the first insulating layer 312.
  • the first source and drain layer
  • the present invention provides a display panel 100 .
  • the display panel 100 includes: a substrate 1, a buffer layer 2, a thin film transistor layer 3, a first flat layer 4, a photodetector 5, a first light-shielding layer 6, a second light-shielding layer 7, an anode 8, a light-emitting layer 9, a cathode 10, A pixel definition layer 11 and an encapsulation layer 12 .
  • the material of the substrate 1 includes polyimide, polycarbonate, polyethylene terephthalate, polyethylene naphthalate and the like. Therefore, the substrate 1 has better impact resistance and can effectively protect the display panel 100 .
  • the buffer layer 2 is disposed on one side surface of the substrate 1 .
  • the buffer layer 2 mainly serves as a buffer, and its material can be SiOx or SiNx or SiNOx or a combined structure of SiNx and SiOx.
  • the thin film transistor layer 3 is disposed on the surface of the buffer layer 2 away from the substrate 1 .
  • the thin film transistor layer 3 includes: a first thin film transistor device 31 and a second thin film transistor device 32 .
  • one end of the first thin film transistor device 31 is electrically connected to the photodetector 5 , and the other end is electrically connected to a control chip (not shown in the figure).
  • the first thin film transistor device 31 includes: a first active layer 311, a first insulating layer 312, a first gate layer 313, a second insulating layer 314, a second gate layer 315, and a third insulating layer 316 and the first source and drain layer 317 .
  • the first active layer 311 is disposed on the surface of the buffer layer 2 away from the substrate 1 .
  • the first active layer 311 may be an oxide semiconductor or other types of semiconductors, such as IGZO, IGTO, IGO, IZO, and AIZO.
  • the first insulating layer 312 is disposed on the surface of the first active layer 311 away from the substrate 1 , and extends to cover the surface of the buffer layer 2 away from the substrate 1 .
  • the first insulating layer 312 is mainly used to prevent the contact between the first active layer 311 and the first gate layer 313 from causing a short circuit.
  • the first insulating layer 312 includes one or more of SiOx, SiNx and Al 2 O 3 .
  • the first gate layer 313 is disposed on the surface of the first insulating layer 312 away from the substrate 1 .
  • the material of the first gate layer 313 includes one or more of Cu, Mo, Al, IZO, ITO, Ni, NiCr, CuNb.
  • the second insulating layer 314 is disposed on the surface of the first gate layer 313 on the side away from the substrate 1 , and extends to cover the surface of the first insulating layer 312 on the side away from the substrate 1 superior.
  • the second insulating layer 314 is mainly used to prevent the contact between the first gate layer 313 and the second gate layer 315 from causing a short circuit.
  • the second insulating layer 314 includes one or more of SiOx, SiNx and Al 2 O 3 .
  • the second gate layer 315 is disposed on the surface of the second insulating layer 314 away from the substrate 1 .
  • the material of the second gate layer 315 includes one or more of Cu, Mo, Al, IZO, ITO, Ni, NiCr, CuNb.
  • the third insulating layer 316 is disposed on the surface of the second gate layer 315 away from the substrate 1 , and extends to cover the surface of the second insulating layer 314 away from the substrate 1 superior.
  • the third insulating layer 316 is mainly used to prevent the short circuit between the second gate layer 315 and the first source-drain layer 317 .
  • the third insulating layer 316 includes one or more of SiOx, SiNx and Al 2 O 3 .
  • the first source-drain layer 317 is disposed on the surface of the third insulating layer 316 away from the substrate 1 , and is electrically connected to the first active layer 311 .
  • the material of the first source-drain layer 317 includes one or more of Cu, Mo, Al, IZO, ITO, Ni, NiCr, CuNb.
  • the first source-drain layer 317 includes a first source 3171 and a first drain 3172 .
  • the first source 3171 is electrically connected to the first electrode 51 of the photodetector 5 .
  • the first drain 3172 is electrically connected to a control chip (not shown).
  • the control chip can be used only to control temperature adjustment, and can also be used to control display at the same time.
  • the first planar layer 4 is disposed on the surface of the thin film transistor layer 3 away from the substrate 1 .
  • the first flat layer 4 mainly provides a flat surface for the film layer above the first flat layer 4 .
  • the photodetector 5 is disposed on the surface of the first planar layer 4 away from the substrate 1 .
  • the photodetector 5 includes: a first electrode 51 , an active layer 52 and a second electrode 53 .
  • the first electrode 51 is disposed on the surface of the first planar layer 4 away from the substrate 1 .
  • the first electrode 51 is an opaque electrode. That is, the first electrode 51 is made of an opaque material.
  • the active layer 52 is disposed on the surface of the first electrode 51 on a side away from the substrate 1 .
  • the second electrode 53 is disposed on the surface of the active layer 52 away from the substrate 1 .
  • the second electrode 53 is a light-transmitting electrode.
  • the transparent electrode mentioned here refers to an electrode capable of transmitting light.
  • the second electrode 53 may be an opaque electrode. At this time, the second electrode 53 can be reused as the first light shielding layer 6 .
  • the photodetector 5 further includes: a first transmission layer 54 and a second transmission layer 55 .
  • the first transmission layer 54 is disposed between the first electrode 51 and the active layer 52 .
  • the second transport layer 55 is disposed between the active layer 52 and the second electrode 53 .
  • the first light-shielding layer 6 covers the side of the active layer 52 away from the substrate 1, and is used to block the light above the active layer 52 of the photodetector 5 from entering the active layer 52 of the photodetector 5. internal.
  • the material of the first light shielding layer 6 includes: black matrix light shielding material and metal light shielding material.
  • the first light shielding layer 6 is a black matrix light shielding material.
  • the first light-shielding layer 6 when the first light-shielding layer 6 is a metal-based light-shielding material, the first light-shielding layer 6 can be reused as the second electrode 53 of the photodetector 5, that is, the second electrode 53 located in the first light-shielding layer can be removed. 6 and the second electrode 53 between the active layer 52.
  • the second light-shielding layer 7 is disposed on the surface of the first electrode 51 away from the substrate 1 , and the first light-shielding layer 7 is at a position corresponding to the first electrode 51 A first opening is provided.
  • the active layer 52 is disposed in the first opening.
  • the second light-shielding layer 7 is used to block light from the side of the active layer 52 of the photodetector 5 from entering the interior of the active layer 52 of the photodetector 5 .
  • the working mechanism of the photodetector 5 is based on the photovoltaic effect, that is, photo-generated excitons are generated in the donor-acceptor material after illumination, and the photo-generated excitons diffuse to the donor-acceptor interface, where they are decomposed to generate free electrons and holes. Holes transported to both ends of the electrodes are collected.
  • the active layer 52 of the photodetector 5 By setting the first light-shielding layer 6 on the side of the active layer 52 of the photodetector 5 away from the substrate 1, and setting the second light-shielding layer 7 on the side of the active layer 52 of the photodetector 5, thereby preventing light from entering the photodetector Inside the active layer 52 of the photodetector 5, the active layer 52 of the photodetector 5 generates a dark current, and utilizes the relationship between the dark current and the temperature of the active layer 52 of the photodetector 5 to monitor the temperature of the photodetector 5 in real time.
  • the display panel 100 further includes: a protective layer 13 and a second flat layer 14 .
  • the protection layer 13 is disposed on the surface of the first light-shielding layer 6 away from the substrate 1 , and extends to cover the surface of the second light-shielding layer 7 away from the substrate 1 .
  • the protection layer 13 is mainly used to prevent the photodetector 5 from being corroded by water and oxygen, and to improve the service life of the photodetector 5 .
  • the second flat layer 14 is disposed on the surface of the protection layer 13 away from the substrate 1 .
  • the second flat layer 14 mainly provides a flat surface for the film layer above the second flat layer 14 .
  • the anode 8 is disposed on a side of the second flat layer 14 away from the substrate 1 .
  • the anode 8 is an opaque electrode.
  • the projection of the photodetector 5 on the substrate 1 is separated from the projection of the anode 8 on the substrate 2 . That is, the projection of the photodetector 5 on the substrate 1 and the projection of the anode 8 on the substrate 1 do not overlap each other.
  • the pixel definition layer 11 is disposed on the surface of the anode 8 away from the substrate, and the pixel definition layer 11 is provided with a second opening at a position corresponding to the anode 8 .
  • the luminescent layer 9 is disposed on the surface of the anode 8 in the second opening on a side away from the substrate 1 .
  • the cathode 10 is disposed on the surface of the light-emitting layer 9 away from the substrate 1 .
  • the cathode 10 is an electrode with high light transmission.
  • the encapsulation layer 12 is disposed on the surface of the cathode 10 away from the substrate, and extends to cover the surface of the pixel definition layer 11 away from the substrate 1 .
  • the encapsulation layer 12 is mainly used to prevent the intrusion of water and oxygen and increase the service life of the display panel 100 .
  • the present embodiment also provides a method for controlling the temperature of the display panel 100 of the present embodiment, which includes the following steps: S1, the control chip obtains the dark current values of the photodetectors 5 at different temperatures to obtain the temperature current Fitting curve; S2, the control chip obtains the real-time dark current value of the photodetector 5 through the first thin film transistor device 31; S3, the control chip obtains from the temperature-current fitting curve according to the real-time dark current value A real-time temperature value corresponding to the real-time dark current value; and S4, the control chip judges whether the real-time temperature value is within a preset temperature range, and performs temperature regulation when the real-time temperature value exceeds the preset temperature range.
  • this embodiment includes most of the technical features of Embodiment 1.
  • the difference between this embodiment and Embodiment 1 is: the projection of the photodetector 5 on the substrate 1 in Embodiment 2 Falling into the projection of the anode 8 on the substrate 1 , the anode 8 is multiplexed as the first light shielding layer 6 .
  • the protective layer 13 is disposed on the surface of the second electrode 53 away from the substrate 1 , and extends to cover the surface of the second light shielding layer 7 away from the substrate 1 .
  • the anode 8 itself is an opaque electrode, and the projection of the photodetector 5 on the substrate 1 falls within the projection of the anode 8 on the substrate 1, the anode 8 can be used as the first light-shielding layer 6 use. Therefore, the production cost of the display panel 100 can be saved.
  • the top surface of the active layer 52 of the photodetector 5 is covered by the anode 8, and the second light-shielding layer 7 is set on the side of the active layer 52 of the photodetector 5, thereby preventing light from entering the active layer 52 of the photodetector 5, so that the photoelectric
  • the active layer 52 of the detector 5 generates a dark current, and the temperature of the photodetector 5 is monitored in real time by using the relationship between the dark current and the temperature of the active layer 52 of the photodetector 5.
  • this embodiment includes most of the technical features of Embodiment 1.
  • the difference between this embodiment and Embodiment 1 is that the anode 8 and the first electrode 51 in Embodiment 3 are arranged on the same layer.
  • the cathode 10 is reused as the second electrode 53 . Therefore, the photomask can be saved, the manufacturing cost of the display panel 100 can be reduced, and the production efficiency of the display panel 100 can be improved.
  • the pixel definition layer 11 is made of a light-shielding material, that is, the pixel definition layer is a light-shielding film layer. At this time, the pixel definition layer 11 is multiplexed as the second light shielding layer 7 . The side light is prevented from entering the active layer 52 by the pixel definition layer 11. Therefore, the photomask can be saved, the manufacturing cost of the display panel 100 can be reduced, and the production efficiency of the display panel 100 can be improved.

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Abstract

一种显示面板（100）及其温度调控方法，显示面板（100）包括：基板（1）、缓冲层（2）、薄膜晶体管层（3）、第一平坦层（4）、光电探测器（5）、第一遮光层（6）以及第二遮光层（7）。在光电探测器（5）的活性层（52）远离基板（1）的一侧设置第一遮光层（6），在光电探测器（5）的活性层（52）的侧面设置第二遮光层（7）。

Description

一种显示面板及其温度调控方法 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板及其温度调控方法。
背景技术
有机发光显示装置(英文全称：Organic Light-Emitting Diode,简称OLED)又称为有机电激光显示装置、有机发光半导体。OLED具有电压需求低、省电效率高、反应快、重量轻、厚度薄，构造简单，成本低、广视角、几乎无穷高的对比度、较低耗电、极高反应速度等优点，已经成为当今最重要的显示技术之一。
技术问题
目前，显示面板的使用过程中，显示面板的温度会发生变化。而显示面板的温度过高会过低都会影响显示面板的发光效果，导致显示面板的使用寿命降低。目前，无法对显示面板的温度进行实时监测与调控。
技术解决方案
本发明的目的是提供一种显示面板及其温度调控方法，其能够解决现有显示面板中存在的温度无法实时监测与调控的问题。
为了解决上述问题，本发明提供了一种显示面板，其包括：基板；薄膜晶体管层，设置于所述基板上；第一平坦层，设置于所述薄膜晶体管层远离所述基板的一侧的表面上；光电探测器，其包括：第一电极，设置于所述第一平坦层远离所述基板的一侧的表面上；活性层，设置于所述第一电极远离所述基板的一侧的表面上；以及第二电极，设置于所述活性层远离所述基板的一侧的表面上；第一遮光层，覆盖于所述活性层远离所述基板的一侧；以及第二遮光层，设置于所述第一电极远离所述基板的一侧的表面上，所述第一遮光层在对应于所述第一电极的位置处设有第一开口；其中，所述活性层设置于所述第一开口内。
进一步的，所述显示面板还包括：阳极，设置于所述第一平坦层远离所述基板的一侧；像素定义层，设置于所述阳极远离所述基板的一侧的表面上，所 述像素定义层在对应于所阳极的位置处设有第二开口；发光层，设置于所述第二开口内的所述阳极远离所述基板的一侧的表面上；以及阴极，设置于所述发光层远离所述基板的一侧的表面上；其中，所述阳极以及所述第一电极均为不透光电极。
进一步的，所述第二电极为透光电极，所述第一遮光层设置于所述第二电极远离所述基板的一侧。
进一步的，所述第二电极为不透光电极，所述第二电极复用为所述第一遮光层。
进一步的，所述阳极设置于所述光电探测器远离所述基板的一侧。
进一步的，所述显示面板还包括：保护层，设置于所述第二电极与所述阳极之间，且延伸覆盖于所述第二遮光层远离所述基板的一侧的表面上；以及第二平坦层，设置于所述保护层与所述阳极之间。
进一步的，所述光电探测器在所述基板上的投影与所述阳极在所述基板上的投影相离，所述保护层设置于所述第一遮光层与所述阳极之间。
进一步的，所述光电探测器在所述基板上的投影落入所述阳极在所述基板上的投影内，所述阳极复用为所述第一遮光层。
进一步的，所述阳极与所述第一电极同层设置。
进一步的，所述阴极复用为所述第二电极。
进一步的，所述像素定义层采用遮光材料组成，所述像素定义层复用为所述第二遮光层。
进一步的，所述薄膜晶体管层包括：第一薄膜晶体管器件，其包括：第一源极，电连接至所述光电探测器的第一电极；以及第一漏极，电连接至一控制芯片。
进一步的，所述光电探测器还包括：第一传输层，设置于所述第一电极与所述活性层之间；以及第二传输层，设置于所述活性层与所述第二电极之间。
进一步的，所述显示面板还包括：缓冲层，设置于所述基板与所述薄膜晶体管之间。
为了解决上述问题，本发明提供了一种本发明所述的显示面板的温度调控方法，其包括以下步骤：获取不同温度下的光电探测器的暗电流值，得到温度 电流拟合曲线；通过第一薄膜晶体管器件获取所述光电探测器的实时暗电流值；根据所述实时暗电流值，从所述温度电流拟合曲线中获得该实时暗电流值对应的实时温度值；判断所述实时温度值是否位于预设温度范围内，当所述实时温度值超出所述预设温度范围外时，执行温度调控。所述显示面板包括：基板；薄膜晶体管层，设置于所述基板上；第一平坦层，设置于所述薄膜晶体管层远离所述基板的一侧的表面上；光电探测器，其包括：第一电极，设置于所述第一平坦层远离所述基板的一侧的表面上；活性层，设置于所述第一电极远离所述基板的一侧的表面上；以及第二电极，设置于所述活性层远离所述基板的一侧的表面上；第一遮光层，覆盖于所述活性层远离所述基板的一侧；以及第二遮光层，设置于所述第一电极远离所述基板的一侧的表面上，所述第一遮光层在对应于所述第一电极的位置处设有第一开口；其中，所述活性层设置于所述第一开口内。
有益效果
通过在光电探测器的活性层远离所述基板的一侧设置第一遮光层，在光电探测器的活性层的侧面设置第二遮光层，进而防止光线进入光电探测器的活性层内部，使得光电探测器的活性层产生暗电流，利用光电探测器的暗电流与温度的关系，实时监测光电探测器的温度，当所述实时温度值超出所述预设温度范围外时，执行温度调控，对光电探测器的温度进行调节，用光电探测器的温度代表显示面板的温度，实现对显示面板的实时温度进行监测与调控的技术效果。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例1的显示面板的结构示意图；
图2是本发明的光电探测器的结构示意图；
图3是本发明的显示面板的温度调控方法流程图；
图4是本发明实施例2的显示面板的结构示意图；
图5是本发明实施例3的显示面板的结构示意图。
附图标记说明：
100、显示面板；
1、基板；                             2、缓冲层；
3、薄膜晶体管层；                     4、第一平坦层；
5、光电探测器；                       6、第一遮光层；
7、第二遮光层；                       8、阳极；
9、发光层；                           10、阴极；
11、像素定义层；                      12、封装层；
13、保护层；                          14、第二平坦层；
31、第一薄膜晶体管器件；              32、第二薄膜晶体管器件；
311、第一有源层；                     312、第一绝缘层；
313、第一栅极层；                     314、第二绝缘层；
315、第二栅极层；                     316、第三绝缘层；
317、第一源漏极层；
51、第一电极；                        52、活性层；
53、第二电极；                        54、第一传输层；
55、第二传输层。
本发明的实施方式
以下结合说明书附图详细说明本发明的优选实施例，以向本领域中的技术人员完整介绍本发明的技术内容，以举例证明本发明可以实施，使得本发明公开的技术内容更加清楚，使得本领域的技术人员更容易理解如何实施本发明。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例，下文实施例的说明并非用来限制本发明的范围。
本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是附图中的方向，本文所使用的方向用语是用来解释和说明本发明，而不是用来限定本发明的保护范围。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。此外，为了便于理解和描述，附图所示的每一组件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。
实施例1
如图1所示，本发明提供了一种显示面板100。显示面板100包括：基板1、缓冲层2、薄膜晶体管层3、第一平坦层4、光电探测器5、第一遮光层6、第二遮光层7、阳极8、发光层9、阴极10、像素定义层11以及封装层12。
其中，基板1的材质包括聚酰亚胺、聚碳酸酯、聚对苯二甲酸乙二醇酯以及聚萘二甲酸乙二醇酯等。由此基板1具有较好的抗冲击能力，可以有效保护显示面板100。
其中，缓冲层2设置于所述基板1的一侧的表面上。缓冲层2主要是起缓冲作用，其材质可为SiOx或SiNx或SiNOx或SiNx与SiOx的组合结构等。
其中，薄膜晶体管层3设置于所述缓冲层2远离所述基板1的一侧的表面上。
如图1所示，所述薄膜晶体管层3包括：第一薄膜晶体管器件31和第二薄膜晶体管器件32。
其中，第一薄膜晶体管器件31一端电连接至所述光电探测器5，另一端电连接至一控制芯片(图未示)。
其中，所述第一薄膜晶体管器件31包括：第一有源层311、第一绝缘层312、第一栅极层313、第二绝缘层314、第二栅极层315、第三绝缘层316以及第一源漏极层317。
其中，第一有源层311设置于所述缓冲层2远离所述基板1的一侧的表面上。第一有源层311可以为氧化物半导体或其他类型半导体，如IGZO、IGTO、IGO、IZO及AIZO等。
其中，第一绝缘层312设置于所述第一有源层311远离所述基板1的一侧的表面上，且延伸覆盖于所述缓冲层2远离所述基板1的一侧的表面上。第一绝缘层312主要是防止第一有源层311与第一栅极层313之间接触产生短路现象。第一绝缘层312包括SiOx、SiNx及Al 2O 3中的一种或多种。
其中，第一栅极层313设置于所述第一绝缘层312远离所述基板1的一侧 的表面上。第一栅极层313的材质包括Cu、Mo、Al、IZO、ITO、Ni、NiCr、CuNb中的一种或多种。
其中，第二绝缘层314设置于所述第一栅极层313远离所述基板1的一侧的表面上，且延伸覆盖于所述第一绝缘层312远离所述基板1的一侧的表面上。第二绝缘层314主要是防止第一栅极层313与第二栅极层315之间接触产生短路现象。第二绝缘层314包括SiOx、SiNx及Al 2O 3中的一种或多种。
其中，第二栅极层315设置于所述第二绝缘层314远离所述基板1的一侧的表面上。第二栅极层315的材质包括Cu、Mo、Al、IZO、ITO、Ni、NiCr、CuNb中的一种或多种。
其中，第三绝缘层316设置于所述第二栅极层315远离所述基板1的一侧的表面上，且延伸覆盖于所述第二绝缘层314远离所述基板1的一侧的表面上。第三绝缘层316主要是防止第二栅极层315与第一源漏极层317之间接触产生短路现象。第三绝缘层316包括SiOx、SiNx及Al 2O 3中的一种或多种。
其中，第一源漏极层317设置于所述第三绝缘层316远离所述基板1的一侧的表面上，且电连接至所述第一有源层311。第一源漏极层317的材质均包括Cu、Mo、Al、IZO、ITO、Ni、NiCr、CuNb中的一种或多种。
其中，第一源漏极层317包括第一源极3171和第一漏极3172。具体的，其中，第一源极3171电连接至所述光电探测器5的第一电极51。第一漏极3172电连接至一控制芯片(图未示)。其中，控制芯片可以仅用于控制温度调节，也可以同时用于控制显示。
其中，第一平坦层4设置于所述薄膜晶体管层3远离所述基板1的一侧的表面上。第一平坦层4主要为第一平坦层4上方的膜层提供平整的表面。
其中，光电探测器5设置于所述第一平坦层4远离所述基板1的一侧的表面上。
如图1所示，所述光电探测器5包括：第一电极51、活性层52以及第二电极53。
其中，第一电极51设置于所述第一平坦层4远离所述基板1的一侧的表面上。本实施例中，所述第一电极51为不透光电极。即，所述第一电极51采用不透光材料制备形成。
其中，活性层52设置于所述第一电极51远离所述基板1的一侧的表面上。
其中，第二电极53设置于所述活性层52远离所述基板1的一侧的表面上。本实施例中，所述第二电极53为透光电极。此处所述透光电极指的是能够透光的电极。
其他实施例中，所述第二电极53可以为不透光电极。此时，第二电极53可以复用为所述第一遮光层6。
如图2所示，所述光电探测器5还包括：第一传输层54以及第二传输层55。所述第一传输层54设置于所述第一电极51与所述活性层52之间。所述第二传输层55设置于所述活性层52与所述第二电极53之间。
如图1所示，第一遮光层6覆盖于所述活性层52远离所述基板1的一侧，用于阻挡光电探测器5的活性层52上方的光线进入光电探测器5的活性层52内部。其中，所述第一遮光层6的材质包括：黑色矩阵类遮光材料及金属类遮光材料。本实施例中，所述第一遮光层6为黑色矩阵类遮光材料。
其他实施例中，当所述第一遮光层6为金属类遮光材料时，所述第一遮光层6可以复用为光电探测器5的第二电极53使用，即可以去除位于第一遮光层6和活性层52之间的第二电极53。
如图1所示，第二遮光层7设置于所述第一电极51远离所述基板1的一侧的表面上，所述第一遮光层7在对应于所述第一电极51的位置处设有第一开口。其中，所述活性层52设置于所述第一开口内。第二遮光层7用于阻挡光电探测器5的活性层52侧面的光线进入光电探测器5的活性层52内部。
光电探测器5的工作机制是基于光生伏特效应的，即光照后在给受体材料中产生光生激子，光生激子扩散至给受体界面，发生分解产生了自由电子和空穴，电子空穴传输到电极两端被收集。
当没有入射光照射光电探测器5时，在反偏压条件下，由于光电探测器5内的第一电极51功函数和活性层52的LUMO(导带)能级差造成的势垒、第二电极53功函数与活性层的HOMO(价带)能级差造成的势垒以及活性层52产生的热电子会产生暗电流。
根据Richardson-Dushman方程
Figure PCTCN2021140817-appb-000001
可知暗电流和温度的关系。其中，J为电流密度，ΔE与活性层52的材料本身有关，k为玻尔兹曼常数，T 为温度。
通过在光电探测器5的活性层52远离所述基板1的一侧设置第一遮光层6，在光电探测器5的活性层52的侧面设置第二遮光层7，进而防止光线进入光电探测器5的活性层52内部，使得光电探测器5的活性层52产生暗电流，利用光电探测器5的活性层52的暗电流与温度的关系，实时监测光电探测器5的温度，当所述实时温度值超出所述预设温度范围外时，执行温度调控，对光电探测器5的温度进行调节，用光电探测器5的温度代表显示面板100的温度，实现对显示面板100的实时温度进行监测与调控的技术效果。
本实施例中，所述显示面板100还包括：保护层13以及第二平坦层14。
其中，保护层13设置于所述第一遮光层6远离所述基板1的一侧的表面上，且延伸覆盖于所述第二遮光层7远离所述基板1的一侧的表面上。所述保护层13主要用于防止所述光电探测器5被水氧侵蚀，提升光电探测器5的使用寿命。
其中，第二平坦层14设置于所述保护层13远离所述基板1的一侧的表面上。第二平坦层14主要为第二平坦层14上方的膜层提供平整的表面。
本实施例中，阳极8设置于所述第二平坦层14远离所述基板1的一侧。所述阳极8为不透光电极。本实施例中，所述光电探测器5在所述基板1上的投影与所述阳极8在所述基板2上的投影相离。即所述光电探测器5在所述基板1上的投影与所述阳极8在所述基板1上的投影互不重叠。
其中，像素定义层11设置于所述阳极8远离所述基板的一侧的表面上，所述像素定义层11在对应于所阳极8的位置处设有第二开口。
其中，发光层9设置于所述第二开口内的所述阳极8远离所述基板1的一侧的表面上。
其中，阴极10设置于所述发光层9远离所述基板1的一侧的表面上。所述阴极10为透光较高的电极。
其中，封装层12设置于所述阴极10远离所述基板的一侧的表面上，且延伸覆盖于所述像素定义层11远离所述基板1的一侧的表面上。封装层12主要用于防止水氧入侵，提升显示面板100的使用寿命。
如图3所示，本实施例还提供了本实施例的显示面板100的温度调控方法， 其包括以下步骤：S1，控制芯片获取不同温度下的光电探测器5的暗电流值，得到温度电流拟合曲线；S2，控制芯片通过第一薄膜晶体管器件31获取所述光电探测器5的实时暗电流值；S3，控制芯片根据所述实时暗电流值，从所述温度电流拟合曲线中获得该实时暗电流值对应的实时温度值；以及S4，控制芯片判断所述实时温度值是否位于预设温度范围内，当所述实时温度值超出所述预设温度范围外时，执行温度调控。
实施例2
如图4所示，本实施例包括了实施例1的大部分技术特征，本实施例与实施例1的区别在于：实施例2中的所述光电探测器5在所述基板1上的投影落入所述阳极8在所述基板1上的投影内，所述阳极8复用为所述第一遮光层6。本实施例中，保护层13设置于所述第二电极53远离所述基板1的一侧的表面上，且延伸覆盖于所述第二遮光层7远离所述基板1的一侧的表面上。
由于阳极8本身属于不透光电极，且所述光电探测器5在所述基板1上的投影落入所述阳极8在所述基板1上的投影内，可以利用阳极8作为第一遮光层6使用。由此可以节约显示面板100的生产成本。
通过阳极8覆盖光电探测器5的活性层52的顶面，在光电探测器5的活性层52的侧面设置第二遮光层7，进而防止光线进入光电探测器5的活性层52内部，使得光电探测器5的活性层52产生暗电流，利用光电探测器5的活性层52的暗电流与温度的关系，实时监测光电探测器5的温度，当所述实时温度值超出所述预设温度范围外时，执行温度调控，对光电探测器5的温度进行调节，用光电探测器5的温度代表显示面板100的温度，实现对显示面板100的实时温度进行监测与调控的技术效果。
实施例3
如图5所示，本实施例包括了实施例1的大部分技术特征，本实施例与实施例1的区别在于：实施例3中所述阳极8与所述第一电极51同层设置。
本实施例中，所述阴极10复用为所述第二电极53。由此可以节省光罩，降低显示面板100的制备成本，提升显示面板100的生产效率。
本实施例中，所述像素定义层11采用遮光材料组成，即所述像素定义层为遮光膜层。此时，所述像素定义层11复用为所述第二遮光层7。利用像素 定义层11防止侧面光线进入活性层52。由此可以节省光罩，降低显示面板100的制备成本，提升显示面板100的生产效率。
通过在光电探测器5的第二电极53远离所述基板1的一侧设置第一遮光层6，在光电探测器5的侧面设置第二遮光层7，进而防止光线进入光电探测器5内部，使得光电探测器5产生暗电流，利用光电探测器5的暗电流与温度的关系，实时监测光电探测器5的温度，当所述实时温度值超出所述预设温度范围外时，执行温度调控，对光电探测器5的温度进行调节，实现对显示面板100的实时温度进行调控的技术效果。
以上对本申请所提供的一种显示面板及其温度调控方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (15)

  1. 一种显示面板，包括：
    基板；
    薄膜晶体管层，设置于所述基板上；
    第一平坦层，设置于所述薄膜晶体管层远离所述基板的一侧的表面上；
    光电探测器，其包括：
    第一电极，设置于所述第一平坦层远离所述基板的一侧的表面上；
    活性层，设置于所述第一电极远离所述基板的一侧的表面上；以及
    第二电极，设置于所述活性层远离所述基板的一侧的表面上；
    第一遮光层，覆盖于所述活性层远离所述基板的一侧；以及
    第二遮光层，设置于所述第一电极远离所述基板的一侧的表面上，所述第一遮光层在对应于所述第一电极的位置处设有第一开口；
    其中，所述活性层设置于所述第一开口内。
  2. 根据权利要求1所述的显示面板，还包括：
    阳极，设置于所述第一平坦层远离所述基板的一侧；
    像素定义层，设置于所述阳极远离所述基板的一侧的表面上，所述像素定义层在对应于所阳极的位置处设有第二开口；
    发光层，设置于所述第二开口内的所述阳极远离所述基板的一侧的表面上；以及
    阴极，设置于所述发光层远离所述基板的一侧的表面上；
    其中，所述阳极以及所述第一电极均为不透光电极。
  3. 根据权利要求2所述的显示面板，所述第二电极为透光电极，所述第一遮光层设置于所述第二电极远离所述基板的一侧。
  4. 根据权利要求2所述的显示面板，所述第二电极为不透光电极，所述第二电极复用为所述第一遮光层。
  5. 根据权利要求3所述的显示面板，所述阳极设置于所述光电探测器远离所述基板的一侧。
  6. 根据权利要求5所述的显示面板，还包括：
    保护层，设置于所述第二电极与所述阳极之间，且延伸覆盖于所述第二遮 光层远离所述基板的一侧的表面上；以及
    第二平坦层，设置于所述保护层与所述阳极之间。
  7. 根据权利要求6所述的显示面板，所述光电探测器在所述基板上的投影与所述阳极在所述基板上的投影相离，所述保护层设置于所述第一遮光层与所述阳极之间。
  8. 根据权利要求6所述的显示面板，所述光电探测器在所述基板上的投影落入所述阳极在所述基板上的投影内，所述阳极复用为所述第一遮光层。
  9. 根据权利要求3所述的显示面板，所述阳极与所述第一电极同层设置。
  10. 根据权利要求9所述的显示面板，所述阴极复用为所述第二电极。
  11. 根据权利要求9所述的显示面板，所述像素定义层采用遮光材料组成，所述像素定义层复用为所述第二遮光层。
  12. 根据权利要求1所述的显示面板，所述薄膜晶体管层包括：
    第一薄膜晶体管器件，其包括：
    第一源极，电连接至所述光电探测器的第一电极；以及
    第一漏极，电连接至一控制芯片。
  13. 根据权利要求1所述的显示面板，所述光电探测器还包括：
    第一传输层，设置于所述第一电极与所述活性层之间；以及
    第二传输层，设置于所述活性层与所述第二电极之间。
  14. 根据权利要求1所述的显示面板，还包括：
    缓冲层，设置于所述基板与所述薄膜晶体管之间。
  15. 一种显示面板的温度调控方法，包括以下步骤：
    获取不同温度下的光电探测器的暗电流值，得到温度电流拟合曲线；
    通过第一薄膜晶体管器件获取所述光电探测器的实时暗电流值；
    根据所述实时暗电流值，从所述温度电流拟合曲线中获得该实时暗电流值对应的实时温度值；
    判断所述实时温度值是否位于预设温度范围内，当所述实时温度值超出所述预设温度范围外时，执行温度调控；
    所述显示面板包括：
    基板；
    薄膜晶体管层，设置于所述基板上；
    第一平坦层，设置于所述薄膜晶体管层远离所述基板的一侧的表面上；
    光电探测器，其包括：
    第一电极，设置于所述第一平坦层远离所述基板的一侧的表面上；
    活性层，设置于所述第一电极远离所述基板的一侧的表面上；以及
    第二电极，设置于所述活性层远离所述基板的一侧的表面上；
    第一遮光层，覆盖于所述活性层远离所述基板的一侧；以及
    第二遮光层，设置于所述第一电极远离所述基板的一侧的表面上，所述第一遮光层在对应于所述第一电极的位置处设有第一开口；
    其中，所述活性层设置于所述第一开口内。
PCT/CN2021/140817 2021-12-16 2021-12-23 一种显示面板及其温度调控方法 Ceased WO2023108786A1 (zh)

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