WO2023108708A1 - 显示面板 - Google Patents

显示面板 Download PDF

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Publication number
WO2023108708A1
WO2023108708A1 PCT/CN2021/139945 CN2021139945W WO2023108708A1 WO 2023108708 A1 WO2023108708 A1 WO 2023108708A1 CN 2021139945 W CN2021139945 W CN 2021139945W WO 2023108708 A1 WO2023108708 A1 WO 2023108708A1
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WO
WIPO (PCT)
Prior art keywords
layer
display panel
support member
insulating layer
disposed
Prior art date
Application number
PCT/CN2021/139945
Other languages
English (en)
French (fr)
Inventor
韩佰祥
高阔
韩志斌
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US17/754,947 priority Critical patent/US20240155917A1/en
Publication of WO2023108708A1 publication Critical patent/WO2023108708A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/872—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present application relates to the field of display technology, in particular to a display panel.
  • the inventors of the present application found that, in the manufacturing process of OLED display panels, it is usually necessary to roll sheet-shaped components, such as polarizers or cover plates, on the encapsulation layer.
  • sheet-shaped components such as polarizers or cover plates
  • the areas where the rolling stress is more concentrated are the edges and corners of the display panel; and when the stress is concentrated locally, the display panel may be damaged.
  • the embodiment of the present application provides a display panel, which can reduce the risk of the display panel being damaged by external force.
  • An embodiment of the present application provides a display panel, including a display area and a frame area arranged outside the display area, and the display panel includes:
  • the thin film transistor layer is disposed on the substrate;
  • the light emitting device corresponds to the display area and is arranged on the thin film crystal layer;
  • At least one support member corresponds to the frame area, the support member is arranged on the substrate, and the support member is used to bear the external force;
  • one of the support members includes at least one gradient portion, and the In the thickness direction of the display panel, the width of the gradient portion shows a gradual trend.
  • the gradient portion in the thickness direction of the display panel, includes a first end surface and a second end surface arranged back to back, and the area of the first end surface is smaller than that of the first end surface. The area of the two ends.
  • the first end surface is an end surface of an end of the support member.
  • the support member is formed by at least one gradient portion.
  • the support member is formed of a single film layer.
  • the support member is formed by stacking at least two sub-layers.
  • the first end surface is located on a side of the support member away from the substrate.
  • the first end surface is located on a side of the support member close to the substrate.
  • the support includes a first support and a second support, and the first end surface of the first support is located at the side of the first support away from the substrate. On one side, the first end surface of the second support is located on a side of the second support close to the base plate.
  • the first support is located on a side of the second support away from the display area.
  • hole structures may also be provided in the first support and the second support, and the number of hole structures in the first support is greater than that in the second support.
  • the number of void structures in the support may also be provided in the first support and the second support, and the number of hole structures in the first support is greater than that in the second support.
  • the gradient portion includes a first gradient portion and a second gradient portion; the first gradient portion includes at least one layer of the sub-layer, and the second gradient portion includes At least one layer of the sub-layer; the first transition portion and the second transition portion are stacked to form the support member.
  • the gradient trends of the first gradient portion and the second gradient portion are the same.
  • the gradient trends of the first gradient portion and the second gradient portion are opposite.
  • the material of the gradient portion includes an organic material.
  • the display panel further includes a passivation layer and a pixel definition layer disposed on the passivation layer, and the passivation layer is disposed on the thin film transistor layer;
  • the supporter includes at least one of a portion of the passivation layer corresponding to the bezel area and a portion of the pixel definition layer corresponding to the bezel area.
  • the thin film transistor layer includes a multi-layer insulating layer, at least one layer of the insulating layer is partially formed in the frame region; the support member is disposed on at least one layer of the insulating layer. above the insulating layer.
  • the thin film transistor layer further includes a light-shielding layer, an active layer, a gate layer, and a source-drain layer;
  • the multi-layer insulating layers are respectively the first insulating layer, the second insulating layer the second insulating layer, the third insulating layer and the fourth insulating layer;
  • the light shielding layer is disposed on the substrate, the first insulating layer is disposed on the light shielding layer, the active layer is disposed on the first insulating layer, and the second insulating layer is disposed on the On the active layer, the gate layer is disposed on the second insulating layer, the third insulating layer is disposed on the gate layer, and the source-drain layer is disposed on the third insulating layer , the fourth insulating layer is disposed on the source-drain layer;
  • Parts of the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer are all located in the frame area and arranged in layers; the support member is arranged on the fourth insulating layer superior.
  • the display panel further includes an encapsulation layer, and the encapsulation layer covers the light emitting device and at least covers a part of the frame area;
  • the encapsulation layer covers the support.
  • the display panel further includes a sheet-shaped member, the sheet-shaped member is disposed on the encapsulation layer and located directly above the support member, and the sheet-shaped member At least one of a polarizer and a cover plate is included.
  • the display panel of the embodiment of the present application includes a display area and a frame area arranged outside the display area.
  • the display panel includes a substrate, a thin-film transistor layer, a light-emitting device, and a plurality of supports; the thin-film transistor layer is arranged on the substrate; the light-emitting device corresponds to In the display area, and arranged on the thin film crystal layer; the support member corresponds to the frame area, the support member is arranged on the substrate, and the support member is used to bear the external force; a support member includes at least one gradient portion, in the thickness direction of the display panel , the width of the gradient part shows a gradual trend.
  • the present application adopts the support including the gradual part to bear the external force, which reduces the risk of the frame area of the display panel being damaged by the external force; in addition, when the external force is applied to the support, the gradual change part is deformed to reduce the impact of the external force. Influence.
  • FIG. 1 is a schematic structural diagram of a display panel provided in a first embodiment of the present application
  • FIG. 2 is a schematic structural diagram of a display panel provided by a second embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a display panel provided by a third embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a display panel provided by a fourth embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a display panel provided by a fifth embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a display panel provided by a sixth embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a display panel provided by a seventh embodiment of the present application.
  • An embodiment of the present application provides a display panel, which will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.
  • the first embodiment of the present application provides a display panel 100 , including a display area AA and a frame area NA disposed outside the display area AA.
  • the display panel 100 includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , at least one supporter 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor layer 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one transition portion 141 . In the thickness direction z of the display panel 100 , the width of the gradient portion 141 is gradually changing.
  • the support member 14 including the transition portion 141 is used to withstand the external force, which reduces the risk of the frame area NA of the display panel 100 being damaged by the external force; in addition, when the external force is applied to the support member 14, the transition portion 141 is deformed to reduce the influence of external force.
  • the support member 14 when performing a rolling lamination process that presses the display panel 100 and other components, being subjected to external impact or pressing, effectively disperses and buffers concentrated in the bezel area of the display panel 100 NA stress, thereby preventing damage to the encapsulation layer 15 .
  • the width of the gradient portion 141 has a gradual tendency.
  • the width of the gradient part 141 can be a single gradient trend, such as a decreasing trend or an increasing trend, or a mixed gradient trend, such as increasing first and then decreasing or first decreasing and then increasing, or alternately stacking increasing and decreasing.
  • the thickness direction of the display panel 100 from the bottom to the top of the substrate 11 is defined as the thickness direction z of the display panel 100 , and the width of the gradient portion 141 decreases gradually in the thickness direction z as an example for illustration.
  • the number of the support member 14 may be one, such as a closed structure formed by extending the support member 14 along the peripheral direction of the display area AA.
  • the number of support members 14 may also be multiple, and the plurality of support members 14 are arranged at intervals outside the display area AA.
  • the substrate 11 may be a rigid substrate or a flexible substrate.
  • the material of the substrate 11 includes glass, sapphire, silicon, silicon dioxide, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene glycol, polyethylene terephthalate, polyethylene naphthalate
  • glycol resin, polycarbonate, polyethersulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane One of glycol resin, polycarbonate, polyethersulfone, aromatic fluorotoluene containing polyarylate, polycyclic olefin, polyimide or polyurethane.
  • the gradient portion 141 includes a first end surface d1 and a second end surface d2 arranged back to back.
  • the area of the first end surface d1 is smaller than the area of the second end surface d2.
  • the area of the gradual change portion 141 in the thickness direction z, from the second end surface d2 to the first end surface d1, presents a decreasing trend.
  • the end of the gradual change portion 141 having the first end surface d1 is defined as the narrow end
  • the end of the gradual change portion 141 having the second end surface d2 is defined as the wide end.
  • the cross-sectional shape of the gradient portion 141 may be trapezoidal, trapezoid-like or other shapes; the two waists of the trapezoid-like shape may be curved sides or other sides.
  • the first end face d1 is an end face of the end of the support member 14 . That is to say, the narrow end serves as the end of the support 14 ; that is, in the support 14 , the narrow end of the support 14 is away from the base plate 11 or toward the base plate 11 .
  • the first end surface d1 can also be arranged inside the support member 14; positioned opposite and in contact with each other. That is, the second end surface d2 serves as the end surface of the end of the support member 14 .
  • the present application uses the narrow end as the end of the support 14.
  • the narrow end is more likely to be deformed to improve the performance of the support 14 in buffering the external force, and then The influence of external force on the display panel 100 is reduced.
  • the support member 14 is formed by at least one gradient portion 141 .
  • the support member 14 includes a tapered portion 141 , and the support member 14 is formed by a single film layer.
  • the first end surface d1 is located on a surface of the support member 14 away from the substrate 11 . That is, the narrow end is located at an end of the support member 14 away from the base plate 11 . Therefore, when an external force is applied to the display panel 100 from top to bottom, the support member 14 is deformed from the narrow end to the wide end to buffer the external force from top to bottom, thereby protecting the display panel 100 .
  • the material of the gradient portion 141 includes organic material.
  • the gradual change part 141 is formed by using an organic material, which improves the deformation performance of the change part 141 .
  • the material of the gradient portion 141 may also include inorganic materials.
  • the gradient portion 141 can be formed together with other film layers to save a photomask; it can also be formed separately.
  • a hole structure is also provided in the gradual change portion 141 to improve the deformation performance of the support member 14 .
  • the display panel 100 of the first embodiment further includes a passivation layer 16 and a pixel definition layer 17 disposed on the passivation layer 16 .
  • a passivation layer 16 is disposed on the thin film transistor layer 12 .
  • the supporter 14 includes at least one of a portion of the passivation layer 16 corresponding to the bezel area NA and a portion of the pixel definition layer 17 corresponding to the bezel area NA.
  • the support member 14 can be formed by the passivation layer 16 or the pixel definition layer 17 .
  • the pixel definition layer 17 includes a plurality of openings defining an area.
  • the light emitting device 13 includes an anode 131 , a light emitting layer 132 and a cathode 133 formed on the passivation layer 16 .
  • the light emitting layer 132 is disposed within the opening.
  • materials of the passivation layer 16 and the pixel definition layer 17 are both organic materials.
  • the organic material can be transparent photoresist, epoxy resin, polyimide, polyvinyl alcohol, polymethyl methacrylate and polystyrene, etc.
  • the material of the light-emitting layer 132 can be an organic material, such as Alq3, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), DPVBi, Almq3, 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (TBADN).
  • organic material such as Alq3, bis(2-methyl-8-hydroxyquinoline-N1,O8)-(1,1'-biphenyl-4-hydroxy)aluminum (BAlq), DPVBi, Almq3, 3-tert-butyl-9,10-bis(2-naphthalene)anthracene (TBADN).
  • the material of the light-emitting layer 132 can also be an inorganic material, for example, it can be selected from group IV semiconductor nanocrystals, II-V group semiconductor nanocrystals, II-VI group semiconductor nanocrystals, IV-VI group semiconductor nanocrystals, and III-V group semiconductor nanocrystals. One or more of semiconductor nanocrystals and III-VI semiconductor nanocrystals.
  • it can be silicon quantum dots, germanium quantum dots, cadmium sulfide quantum dots, cadmium selenide quantum dots, cadmium telluride quantum dots, zinc selenide quantum dots, lead sulfide quantum dots, lead selenide quantum dots, indium phosphide quantum dots One or more of quantum dots, indium arsenide quantum dots, gallium nitride quantum dots, etc.
  • the thin film transistor layer 12 includes multiple insulating layers jy. Part of at least one insulating layer jy is formed in the frame area NA.
  • the support 14 is disposed on at least one insulating layer jy.
  • the supporting member 14 is arranged on the insulating layer jy to raise the supporting member 14, shortening the height difference between the supporting member 14 and the part of the display panel 100 corresponding to the display area AA, so that the supporting member 14 can better bear the external force, Further, the display panel 100 is protected.
  • the supporting member 14 may not be disposed on the insulating layer jy, that is, directly formed on the substrate 11 .
  • the thin film transistor layer 12 further includes a light shielding layer 121 , an active layer 122 , a gate layer 123 and a source-drain layer 124 .
  • the multilayer insulating layers jy are respectively a first insulating layer jy1 , a second insulating layer jy2 , a third insulating layer jy3 and a fourth insulating layer jy4 .
  • the light shielding layer 121 is disposed on the substrate 11 .
  • the first insulating layer jy1 is disposed on the light shielding layer 121 .
  • the active layer 122 is disposed on the first insulating layer jy1.
  • the second insulating layer jy2 is disposed on the active layer 122 .
  • the gate layer 123 is disposed on the second insulating layer jy2.
  • the third insulating layer jy3 is disposed on the gate layer 123 .
  • the source-drain layer 124 is disposed on the third insulating layer jy3.
  • the fourth insulating layer jy4 is disposed on the source-drain layer 124 .
  • Parts of the first insulating layer jy1 , the second insulating layer jy2 , the third insulating layer jy3 and the fourth insulating layer jy4 are all located in the frame area NA and are stacked.
  • the supporter 14 is disposed on the fourth insulating layer jy4.
  • the supporting member 14 is stacked with the plurality of insulating layers jy located in the frame area NA, thereby raising the supporting member 14 so that the supporting member 14 can better withstand external forces.
  • the TFT layer 12 of the display panel 100 in the first embodiment includes a top-gate TFT, but the present application is not limited thereto, for example, it may also be a bottom-gate TFT, a double-gate TFT Thin film transistors or thin film transistors with a self-aligned back channel structure.
  • the thin film transistor layer 12 includes a bottom gate thin film transistor, the light shielding layer can be saved.
  • the first insulating layer jy1 is a buffer layer, and its material may be inorganic materials such as silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, titanium oxide, or magnesium oxide.
  • Materials for the second insulating layer jy2 , the third insulating layer jy3 and the fourth insulating layer jy4 may be inorganic materials such as silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and magnesium oxide.
  • the material of the light-shielding layer 121 can be an inorganic metal material, such as Cr (chromium), Mo (molybdenum), Mn (manganese), etc., or a metal oxide material, such as CrO x , MoO x , MnO 2 etc., or a mixed film layer formed of metal and metal oxide; it can also be an organic black resin material, such as black polystyrene, black photoresist, etc.
  • an inorganic metal material such as Cr (chromium), Mo (molybdenum), Mn (manganese), etc.
  • a metal oxide material such as CrO x , MoO x , MnO 2 etc.
  • a mixed film layer formed of metal and metal oxide such as black polystyrene, black photoresist, etc.
  • the material of the active layer 122 may be an oxide semiconductor or polysilicon (poly-Si).
  • Oxide semiconductors may include titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), germanium (Ge), zinc (Zn), gallium (Ga), tin (Sn) Or indium (In) oxides and their composite oxides (such as indium gallium zinc oxide (In-Ga-Zn-O), indium zinc oxide (Zn-In-O), zinc tin oxide (Zn- Sn-O), indium gallium oxide (In-Ga-O), indium tin oxide (In-Sn-O), indium zirconium oxide (In-Zr-O), indium zirconium zinc oxide (In-Zr -Zn-O), indium zirconium tin oxide (In-Zr-Sn-O), indium zirconium tin oxide (In-Zr-Sn-O), indium
  • the gate layer 123 includes gates and signal lines.
  • the source-drain layer 124 includes source electrodes, drain electrodes and signal lines.
  • Gate layer 123 and source-drain layer 124 can be selected from chromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), cobalt (Co), alloys containing any of the above metal elements, or a combination of the above Alloys, etc., of any metallic element are formed.
  • the gate layer 123 and the source-drain layer 124 may have a single-layer structure or a stacked structure of more than two layers.
  • the encapsulation layer 15 covers at least part of the frame area NA.
  • the encapsulation layer 15 covers the support 14 .
  • the encapsulation layer 15 is used to cover the support member 14 to compensate for the height difference between the support member 14 and the part of the display panel 100 located in the display area AA, so as to facilitate the support member 14 to be stressed.
  • the encapsulation layer 15 includes a first inorganic layer, an organic layer and a second inorganic layer arranged in a stack; it may also include an organic layer and an inorganic layer arranged in a stack.
  • the display panel 100 further includes a sheet member 18 .
  • the sheet-shaped member 18 is disposed on the encapsulation layer 15 and directly above the support 14 .
  • the sheet member 18 includes at least one of a polarizer and a cover plate.
  • the support member 14 when the roll lamination process of the display panel 100 and the sheet member 18 is performed, the support member 14 according to the present exemplary first embodiment effectively disperses the stress concentrated on the bezel area NA of the display panel 100, thereby preventing The encapsulation layer 15 is damaged. Specifically, when the rolling lamination process is performed, the supporting member 14 can buffer the stress concentration and delay its speed to achieve the effect of protecting the display panel 100 .
  • the second embodiment of the present application provides a display panel 200 , which includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , a plurality of support members 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor layer 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one gradient portion 141 in the thickness direction z of the display panel 100 .
  • the width of the gradient portion 141 is gradually changing.
  • the display panel 200 of the second embodiment is different from the display panel 100 of the first embodiment in that: the first end face d1 is located on the side of the support member 14 close to the substrate 11 .
  • the supporter 14 When pressing the back surface of the display panel 200 corresponding to the bezel area NA is performed, the supporter 14 according to the present exemplary second embodiment effectively disperses the stress concentrated on the bezel area NA of the display panel 200, thereby preventing the encapsulation layer 15 from being damaged. .
  • the encapsulation layer 15 breaks at the undercut space of the support 14 . Therefore, when the encapsulation layer 15 on the support member 14 is cracked due to external force, the crack will not spread to the display area AA, which improves the encapsulation effect of the encapsulation layer 15 .
  • the third embodiment of the present application provides a display panel 300 , which includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , a plurality of support members 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one gradient portion 141 in the thickness direction z of the display panel 100 .
  • the width of the gradient portion 141 is gradually changing.
  • the supporting member 14 includes a first supporting member 14 a and a second supporting member 14 b.
  • the first end surface d1 of the first support member 14 a is located on a side of the first support member 14 a away from the substrate 11 .
  • the first end surface d1 of the second support member 14 b is located on a side of the second support member 14 b close to the substrate 11 .
  • the support member 14 of this embodiment can effectively disperse and buffer the stress applied to the frame area NA, thereby achieving the effect of protecting the display panel 300 . That is to say, the display panel 300 of the third embodiment can adapt to external forces in different directions.
  • the first support member 14a is located on a side of the second support member 14b away from the display area AA.
  • the encapsulation layer 15 is disconnected at the undercut space of the second support member 14b. Therefore, when the encapsulation layer 15 on the first support member 14 a and the second support member 14 b is cracked due to external force, the crack will not spread to the display area AA, which improves the encapsulation effect of the encapsulation layer 15 .
  • hole structures may also be provided in the first support member 14a and the second support member 14b.
  • the number of hole structures in the first support member 14a is greater than the number of hole structures in the second support member 14b.
  • the fourth embodiment of the present application provides a display panel 400 , which includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , a plurality of support members 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor layer 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one gradient portion 141 in the thickness direction z of the display panel 100 .
  • the width of the gradient portion 141 is gradually changing.
  • the support member 14 is formed by stacking at least two sub-layers.
  • the support member 14 may also include a non-gradient portion.
  • the non-gradient part and the gradient part 141 are stacked. Specifically, one of the sublayers serves as the non-gradient part, and one of the sublayers serves as the gradient part 141 .
  • the width of the non-gradient portion shows a non-gradual trend, for example, the width of the non-gradient portion remains unchanged or varies from large to small.
  • the display panel 400 of the fourth embodiment is described by taking the support member 14 formed by the gradient portion 141 as an example.
  • the gradient portion 141 includes a first gradient portion 1411 and a second gradient portion 1412 .
  • the first gradient portion 1411 includes at least one sub-layer.
  • the second gradient portion 1412 includes at least one sub-layer.
  • the first transition portion 1411 and the second transition portion 1412 are stacked to form the support member 14 .
  • the fourth embodiment is described by taking an example in which both the first gradient portion 1411 and the second gradient portion 1412 include one sub-layer, but it is not limited thereto.
  • the first gradient portion 1411 is formed in the passivation layer 16 .
  • the portion of the passivation layer 16 formed in the frame area NA is used as the first gradient portion 1411 . That is to say, the part of the passivation layer 16 formed in the frame area NA is used as the sub-layer of the first gradient portion 1411 .
  • the second gradient portion 1412 is formed in the pixel definition layer 17 ; that is, the portion of the pixel definition layer 17 formed in the frame area NA is used as the second gradient portion 1412 . That is to say, the part of the pixel definition layer 17 formed in the frame area NA is used as the sub-layer of the second gradient portion 1412 .
  • the gradient portion 141 is formed by stacking multiple sub-layers, so as to increase the height of the support member 14 , reduce the height difference with the display area AA, and improve the supporting performance of the support member 14 .
  • the gradient trends of the first gradient portion 1411 and the second gradient portion 1412 are the same.
  • the width gradients of the first gradient portion 1411 and the second gradient portion 1412 both decrease gradually.
  • first end surface d1 of the first gradual change portion 1411 is greater than or equal to the second end surface d2 of the second gradual change portion 1412 ; so as to improve the stability of the gradual change portion 141 .
  • the first end surface d1 of the first gradual change portion 1411 may also be smaller than the second end surface d2 of the second gradual change portion 1412 .
  • the fifth embodiment of the present application provides a display panel 500 , which includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , a plurality of support members 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor layer 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one gradient portion 141 in the thickness direction z of the display panel 100 .
  • the width of the gradient portion 141 is gradually changing.
  • the difference between the display panel 500 of the fifth embodiment and the display panel 400 of the fourth embodiment is: the width of the first gradient portion 1411 and the second gradient portion 1412 in the thickness direction z from the bottom to the top of the substrate 11 Gradient trends can also be all increasing.
  • the sixth embodiment of the present application provides a display panel 600 , which includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , a plurality of support members 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor layer 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one gradient portion 141 in the thickness direction z of the display panel 100 .
  • the width of the gradient portion 141 is gradually changing.
  • the supporting member 14 includes a first supporting member 14 a and a second supporting member 14 b.
  • the first end surface d1 of the first support member 14 a is located on a side of the first support member 14 away from the substrate 11 .
  • the first end surface d1 of the second support member 14 b is located on a side of the second support member 14 close to the substrate 11 .
  • the width gradients of the first gradual change portion 1411 and the second gradual change portion 1412 in the first support member 14 a may also be increasing gradually.
  • the width gradient trends of the first gradient portion 1411 and the second gradient portion 1412 in the second support member 14b may also both be decreasing.
  • the seventh embodiment of the present application provides a display panel 700 , which includes a substrate 11 , a thin film transistor layer 12 , a light emitting device 13 , a plurality of support members 14 and an encapsulation layer 15 .
  • the thin film transistor layer 12 is disposed on the substrate 11 .
  • the light emitting device 13 corresponds to the display area AA, and is disposed on the thin film transistor layer 12 .
  • the encapsulation layer 15 is disposed on the light emitting device 13 .
  • the support 14 corresponds to the bezel area NA.
  • the support 14 is disposed on the base plate 11 .
  • the support 14 is used to withstand external forces.
  • a supporting member 14 includes at least one gradient portion 141 in the thickness direction z of the display panel 100 .
  • the width of the gradient portion 141 is gradually changing.
  • the difference between the display panel 700 of the seventh embodiment and the display panel 400/500/600 of the above-mentioned embodiments is that: in the same thickness direction z of the display panel 700, the gradients of the first gradient portion 1411 and the second gradient portion 1412 The trend is opposite.
  • the width of the first gradual change portion 1411 gradually changes gradually.
  • the width of the second gradient portion 1412 gradually decreases. That is to say, both ends of the supporting member 14 are narrow ends, so as to adapt to external forces in different directions and reduce the width of the frame.
  • the encapsulation layer 15 breaks at the undercut space of the support 14 . Therefore, when the encapsulation layer 15 on the support member 14 is cracked due to external force, the crack will not spread to the display area AA, which improves the encapsulation effect of the encapsulation layer 15 .
  • the display panel of the embodiment of the present application includes a display area and a frame area arranged outside the display area.
  • the display panel includes a substrate, a thin-film transistor layer, a light-emitting device, and a plurality of supports; the thin-film transistor layer is arranged on the substrate; the light-emitting device corresponds to In the display area, and arranged on the thin film crystal layer; the support member corresponds to the frame area, the support member is arranged on the substrate, and the support member is used to bear the external force; a support member includes at least one gradient portion, in the thickness direction of the display panel , the width of the gradient part shows a gradual trend.
  • the present application adopts the support including the gradual part to bear the external force, which reduces the risk of the frame area of the display panel being damaged by the external force; in addition, when the external force is applied to the support, the gradual change part is deformed to reduce the impact of the external force. Influence.

Abstract

一种显示面板（100），其包括显示区（AA）和边框区（NA），薄膜晶体管层（12）设置在基板（11）上；发光（13）对应于显示区（AA），且设置在薄膜晶体层（12）上；支撑（14）对应于边框区（NA），支撑件（14）设置在基板（11）上，支撑件（14）用于承受外部力；一支撑件（14）包括至少一渐变部分（141），在显示面板（100）的厚度方向上，渐变部分（141）的宽度呈渐变趋势。

Description

显示面板 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板。
 背景技术
在对现有技术的研究和实践过程中，本申请的发明人发现，在有机发光二极管显示面板的制程中，通常需要在封装层上滚压片状部件，比如偏振片或盖板等。但是在滚压的过程中，滚压应力较为集中的区域为显示面板的边缘和边角区域；而当应力集中在局部时可能会损坏显示面板。
 技术问题
本申请实施例提供一种显示面板，可以降低显示面板被外部力损坏的风险。
 技术解决方案
本申请实施例提供一种显示面板，包括显示区和设置在所述显示区外的边框区，所述显示面板包括：
基板；
薄膜晶体管层；所述薄膜晶体管层设置在所述基板上；
发光器件，所述发光器件对应于所述显示区，且设置在所述薄膜晶体层上；
至少一个支撑件，所述支撑件对应于所述边框区，所述支撑件设置在所述基板上，所述支撑件用于承受外部力；一所述支撑件包括至少一渐变部分，在所述显示面板的厚度方向上，所述渐变部分的宽度呈渐变趋势。
可选的，在本申请的一些实施例中，在所述显示面板的厚度方向上，所述渐变部分包括背对背设置的第一端面和第二端面，所述第一端面的面积小于所述第二端面的面积。
可选的，在本申请的一些实施例中，所述第一端面为所述支撑件的端部的端面。
可选的，在本申请的一些实施例中，所述支撑件由至少一所述渐变部分形成。
可选的，在本申请的一些实施例中，所述支撑件由单层膜层形成。
可选的，在本申请的一些实施例中，所述支撑件包括至少两层子层堆叠形成。
可选的，在本申请的一些实施例中，所述第一端面位于所述支撑件远离所述基板的一面。
可选的，在本申请的一些实施例中，所述第一端面位于所述支撑件靠近所述基板的一面。
可选的，在本申请的一些实施例中，所述支撑件包括第一支撑件和第二支撑件，所述第一支撑件的第一端面位于所述第一支撑件远离所述基板的一面，所述第二支撑件的第一端面位于所述第二支撑件靠近所述基板的一面。
可选的，在本申请的一些实施例中，所述第一支撑件位于所述第二支撑件远离所述显示区的一侧。
可选的，在本申请的一些实施例中，所述第一支撑件和所述第二支撑件内还可以设置有孔洞结构，所述第一支撑件内孔洞结构的数量大于所述第二支撑件内孔洞结构的数量。
可选的，在本申请的一些实施例中，所述渐变部分包括第一渐变部和第二渐变部；所述第一渐变部包括至少一层所述子层，所述第二渐变部包括至少一层所述子层；所述第一渐变部和所述第二渐变部堆叠形成所述支撑件。
可选的，在本申请的一些实施例中，在所述显示面板的同一厚度方向上，所述第一渐变部和所述第二渐变部的渐变趋势相同。
可选的，在本申请的一些实施例中，在所述显示面板的同一厚度方向上，所述第一渐变部和所述第二渐变部的渐变趋势相反。
可选的，在本申请的一些实施例中，所述渐变部分的材料包括有机材料。
可选的，在本申请的一些实施例中，所述显示面板还包括钝化层和设置在所述钝化层上的像素定义层，所述钝化层设置在所述薄膜晶体管层上；
所述支撑件包括所述钝化层对应于所述边框区的部分和所述像素定义层对应于所述边框区的部分中的至少一者。
可选的，在本申请的一些实施例中，所述薄膜晶体管层包括多层绝缘层，至少一层所述绝缘层的部分形成在所述边框区；所述支撑件设置在至少一层所述绝缘层上。
可选的，在本申请的一些实施例中，所述薄膜晶体管层还包括遮光层、有源层、栅极层和源漏极层；多层所述绝缘层分别是第一绝缘层、第二绝缘层、第三绝缘层和第四绝缘层；
所述遮光层设置在所述基板上，所述第一绝缘层设置在所述遮光层上，所述有源层设置在所述第一绝缘层上，所述第二绝缘层设置在所述有源层上，所述栅极层设置在所述第二绝缘层上，所述第三绝缘层设置在所述栅极层上，所述源漏极层设置在所述第三绝缘层上，所述第四绝缘层设置在所述源漏极层上；
所述第一绝缘层、所述第二绝缘层、所述第三绝缘层和所述第四绝缘层的部分均位于所述边框区，且层叠设置；所述支撑件设置在第四绝缘层上。
可选的，在本申请的一些实施例中，所述显示面板还包括封装层，所述封装层覆盖所述发光器件，且至少覆盖所述边框区的部分；
所述封装层覆盖所述支撑件。
可选的，在本申请的一些实施例中，所述显示面板还包括片状构件，所述片状构件设置在所述封装层上且位于所述支撑件的正上方，所述片状构件包括偏光片和盖板中的至少一种。
 有益效果
本申请实施例的显示面板，其包括显示区和设置在显示区外的边框区，显示面板包括基板、薄膜晶体管层、发光器件和多个支撑件；薄膜晶体管层设置在基板上；发光器件对应于显示区，且设置在薄膜晶体层上；支撑件对应于边框区，支撑件设置在基板上，支撑件用于承受外部力；一支撑件包括至少一渐变部分，在显示面板的厚度方向上，渐变部分的宽度呈渐变趋势。
其中，本申请采用包含渐变部分的支撑件承受外部力，降低了显示面板的边框区被外部力损伤的风险；另外，当外部力施加在支撑件上时，渐变部分发生形变以降低外部力的影响。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请第一实施例提供的显示面板的结构示意图；
图2是本申请第二实施例提供的显示面板的结构示意图；
图3是本申请第三实施例提供的显示面板的结构示意图；
图4是本申请第四实施例提供的显示面板的结构示意图；
图5是本申请第五实施例提供的显示面板的结构示意图；
图6是本申请第六实施例提供的显示面板的结构示意图；
图7是本申请第七实施例提供的显示面板的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供一种显示面板，下文进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。
请参照图1，本申请第一实施例提供一种显示面板100，包括显示区AA和设置在显示区AA外的边框区NA。显示面板100包括基板11、薄膜晶体管层12、发光器件13、至少一个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体管层12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141。在显示面板100的厚度方向z上，渐变部分141的宽度呈渐变趋势。
本申请第一实施例采用包含渐变部分141的支撑件14承受外部力，降低了显示面板100的边框区NA被外部力损伤的风险；另外，当外部力施加在支撑件14上时，渐变部分141发生形变以降低外部力的影响。
比如，当执行按压显示面板100与其他组件的滚动层压工艺、受外部碰撞或按压时，根据当前的示例性第一实施例的支撑件14有效地分散及缓冲集中在显示面板100的边框区NA的应力，由此防止封装层15损坏。
需要说的是，在显示面板100的厚度方向z上，渐变部分141的宽度呈渐变趋势。比如，渐变部分141的宽度可以是呈单一渐变趋势，比如递减趋势或递增趋势，也可以是混搭渐变趋势，比如先递增后递减或者先递减后递增，亦或者是递增和递减交替层叠。本第一实施例的显示面板100从基板11自下而上的厚度方向作为显示面板100的厚度方向z，并以渐变部分141的宽度在厚度方向z递减为例进行阐述。
可选的，支撑件14的数量可以是一个，比如支撑件14沿着显示区AA的外周方向延伸形成的闭合结构。
支撑件14的数量也可以是多个，多个支撑件14在显示区AA的外侧间隔设置。
可选的，基板11可为硬性基板或者柔性基板。基板11的材质包括玻璃、蓝宝石、硅、二氧化硅、聚乙烯、聚丙烯、聚苯乙烯、聚乳酸、聚二甲酸乙二醇酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇脂、聚碳酸酯、聚醚砜、含有聚芳酯的芳族氟甲苯、多环烯烃、聚酰亚胺或聚氨酯中的一种。
可选的，在显示面板100的厚度方向z上，渐变部分141包括背对背设置的第一端面d1和第二端面d2。第一端面d1的面积小于第二端面d2的面积。
也即，渐变部分141在厚度方向z上，从第二端面d2向第一端面d1，其面积呈递减趋势。此时，定义渐变部分141具有第一端面d1的一端为窄端，定义渐变部分141具有第二端面d2的一端为宽端。
可选的，渐变部分141的截面形状可以是梯形、类梯形或其他形状；类梯形的两腰边可以为曲边或其他边线。
可选的，第一端面d1为支撑件14的端部的端面。也就是说，窄端作为支撑件14的端部；也即在支撑件14中，支撑件14的窄端远离基板11或朝向基板11。
在一些实施例中，第一端面d1也可以是设置在支撑件14的内部；比如两个渐变部分141层叠设置，一个渐变部分141的第一端面d1与另一渐变部分141的第一端面d1相对设置且彼此接触。也即第二端面d2作为支撑件14端部的端面。
可选的，本申请采用窄端作为支撑件14的端部，当外部力施加在支撑件14的窄端时，窄端更容易发生形变，以提高了支撑件14缓冲外部力的性能，进而降低了外部力对显示面板100的影响。
可选的，支撑件14由至少一渐变部分141形成。比如，如图1所示，支撑件14包括一个渐变部分141，支撑件14由单层膜层形成。
第一端面d1位于支撑件14远离基板11的一面。也即，窄端位于支撑件14远离基板11的一端。故外部力自上而下施加在显示面板100上时，支撑件14自窄端向宽端发生形变，以缓冲自上而下的外部力，进而保护显示面板100。
可选的，渐变部分141的材料包括有机材料。采用有机材料形成渐变部分141，提高了渐变部分141的形变性能。
可选的，在一些实施例中，渐变部分141的材料也可以包括无机材料。
需要说明的是，渐变部分141可以与其他膜层一同形成，以节省光罩；也可以单独形成。
可选的，在一些实施例中，渐变部分141内还设置有孔洞结构，以提高支撑件14的形变性能。
可选的，本第一实施例的显示面板100还包括钝化层16和设置在钝化层16上的像素定义层17。钝化层16设置在薄膜晶体管层12上。
支撑件14包括钝化层16对应于边框区NA的部分和像素定义层17对应于边框区NA的部分中的至少一者。
比如，在本第一实施例的显示面板100中，支撑件14可由钝化层16或像素定义层17形成。
像素定义层17包括限定区域的多个开口。发光器件13包括形成在钝化层16上的阳极131、发光层132和阴极133。发光层132设置在开口内。
可选的，钝化层16和像素定义层17的材料均为有机材料。有机材料可以是透明光刻胶、环氧树脂、聚酰亚胺、聚乙烯醇、聚甲基丙烯酸甲酯和聚苯乙烯等。
可选的，发光层132材料可以是有机材料，比如可以是Alq3、双(2-甲基-8-羟基喹啉-N1,O8)-(1,1'-联苯-4-羟基)铝（BAlq）、DPVBi、Almq3、3-叔丁基-9,10-二(2-萘)蒽（TBADN）。
发光层132的材料也可以是无机材料，比如可以是选自IV族半导体纳米晶、II-V族半导体纳米晶、II-VI族半导体纳米晶、IV-VI族半导体纳米晶、III-V族半导体纳米晶和III-VI族半导体纳米晶等中的一种或多种。作为举例，可以为硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点、硫化铅量子点、硒化铅量子点、磷化铟量子点、砷化铟量子点和氮化镓量子点等中的一种或多种。
可选的，薄膜晶体管层12包括多层绝缘层jy。至少一层绝缘层jy的部分形成在边框区NA。支撑件14设置在至少一层绝缘层jy上。
其中，将支撑件14设置在绝缘层jy上，以垫高支撑件14，缩短了支撑件14与显示面板100对应于显示区AA部分的高度差，便于支撑件14更好的承受外部力，进而保护显示面板100。
在一些实施例中，支撑件14也可不设置在绝缘层jy上，也即，直接形成在基板11上。
可选的，在第一实施例中，薄膜晶体管层12还包括遮光层121、有源层122、栅极层123和源漏极层124。多层绝缘层jy分别是第一绝缘层jy1、第二绝缘层jy2、第三绝缘层jy3和第四绝缘层jy4。
遮光层121设置在基板11上。第一绝缘层jy1设置在遮光层121上。有源层122设置在第一绝缘层jy1上。第二绝缘层jy2设置在有源层122上。栅极层123设置在第二绝缘层jy2上。第三绝缘层jy3设置在栅极层123上。源漏极层124设置在第三绝缘层jy3上。第四绝缘层jy4设置在源漏极层124上。
第一绝缘层jy1、第二绝缘层jy2、第三绝缘层jy3和第四绝缘层jy4的部分均位于边框区NA，且层叠设置。支撑件14设置在第四绝缘层jy4上。
也就是说，支撑件14与位于边框区NA的多个绝缘层jy层叠设置，进而垫高了支撑件14，便于支撑件14更好的承受外部力。
需要说明的是，本第一实施例的显示面板100的薄膜晶体管层12包括顶栅型的薄膜晶体管，但本申请并不限于此，比如还可以是底栅型的薄膜晶体管、双栅型的薄膜晶体管或自对准背沟道架构的薄膜晶体管。当薄膜晶体管层12包括底栅型薄膜晶体管时，可以节省遮光层。
可选的，第一绝缘层jy1为缓冲层，其材料可以是氮化硅、氧化硅、氮氧化硅、氧化铝、氧化钛或氧化镁等无机材料。
第二绝缘层jy2、第三绝缘层jy3和第四绝缘层jy4的材料可以是氮化硅、氧化硅、氮氧化硅、氧化铝、氧化镁等无机材料。
可选的，遮光层121的材料可以是无机的金属材料，如Cr（铬）、Mo（钼）、Mn（锰）等，也可以是金属氧化物材料，如CrO x、MoO x、MnO 2等，或者由金属和金属氧化物形成的混合膜层；亦可以是有机黑色树脂材料，如黑色聚苯乙烯、黑色光刻胶等。
有源层122的材料可以是氧化物半导体或多晶硅(poly-Si)。氧化物半导体可以包括基于钛(Ti)、铪(Hf)、锆(Zr)、铝(Al)、钽(Ta)、锗(Ge)、锌(Zn)、镓(Ga)、锡(Sn)或铟(In)的氧化物以及它们的复合氧化物(诸如铟镓锌氧化物(In-Ga-Zn-O)、铟锌氧化物(Zn-In-O)、锌锡氧化物(Zn-Sn-O)、铟镓氧化物(In-Ga-O)、铟锡氧化物(In-Sn-O)、铟锆氧化物(In-Zr-O)、铟锆锌氧化物(In-Zr-Zn-O)、铟锆锡氧化物(In-Zr-Sn-O)、铟锆镓氧化物(In-Zr-Ga-O)、铟铝氧化物(In-Al-O)、铟锌铝氧化物(In-Zn-Al-O)、铟锡铝氧化物(In-Sn-Al-O)、铟铝镓氧化物(In-Al-Ga-O)、铟钽氧化物(In-Ta-O)、铟钽锌氧化物(In-Ta-Zn-O)、铟钽锡氧化物(In-Ta-Sn-O)、铟钽镓氧化物(In-Ta-Ga-O)、铟锗氧化物(In-Ge-O)、铟锗锌氧化物(In-Ge-Zn-O)、铟锗锡氧化物(In-Ge-Sn-O)、铟锗镓氧化物(In-Ge-Ga-O)、钛铟锌氧化物(Ti-In-Zn-O)和铪铟锌氧化物(Hf-In-Zn-O))中的一种。
栅极层123包括栅极和信号线。源漏极层124包括源极、漏极和信号线。栅极层123和源漏极层124可以使用选自铬(Cr)、铜(Cu)、铝(Al)、金(Au)、银(Ag)、锌(Zn)、钼(Mo)、钽(Ta)、钛(Ti)、钨(W)、锰(Mn)、镍(Ni)、铁(Fe)、钴(Co)中的金属元素、以上述任何金属元素为成分的合金或者组合上述任何金属元素的合金等形成。此外，栅极层123和源漏极层124可以具有单层结构或者两层以上的叠层结构。
可选的，封装层15至少覆盖边框区NA的部分。封装层15覆盖支撑件14。
其中，采用封装层15覆盖支撑件14，以弥补支撑件14和显示面板100位于显示区AA的部分的高度差，便于支撑件14受力。
可选的，封装层15包括堆叠设置的第一无机层、有机层和第二无机层；也可以是包括堆叠设置的有机层和无机层。
可选的，显示面板100还包括片状构件18。片状构件18设置在封装层15上且位于支撑件14的正上方。片状构件18包括偏光片和盖板中的至少一种。
其中，当执行显示面板100与片状构件18的滚动层压工艺时，根据当前的示例性第一实施例的支撑件14有效地分散集中在显示面板100的边框区NA的应力，由此防止封装层15损坏。具体地，当执行滚动层压工艺时，支撑件14可以缓冲应力集中，并且可以延迟它的速度，达到保护显示面板100的效果。
请参照图2，本申请第二实施例提供一种显示面板200，其包括基板11、薄膜晶体管层12、发光器件13、多个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体管层12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141，在显示面板100的厚度方向z上。渐变部分141的宽度呈渐变趋势。
本第二实施例的显示面板200与第一实施例的显示面板100的不同之处在于：第一端面d1位于支撑件14靠近基板11的一面。
当执行按压显示面板200对应于边框区NA的背面时，根据当前的示例性第二实施例的支撑件14有效地分散集中在显示面板200的边框区NA的应力，由此防止封装层15损坏。
由于封装层15在支撑件14的底切空间处断开。因此当支撑件14上的封装层15因外部力而裂开时，裂缝不会蔓延至显示区AA，提高了封装层15的封装效果。
请参照图3，本申请第三实施例提供一种显示面板300，其包括基板11、薄膜晶体管层12、发光器件13、多个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体层管12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141，在显示面板100的厚度方向z上。渐变部分141的宽度呈渐变趋势。
本第三实施例的显示面板300与第一实施例的显示面板100的不同之处在于：支撑件14包括第一支撑件14a和第二支撑件14b。第一支撑件14a的第一端面d1位于第一支撑件14a远离基板11的一面。第二支撑件14b的第一端面d1位于第二支撑件14b靠近基板11的一面。
当执行按压显示面板300对应于边框区NA的正面和/或背面时，本实施例的支撑件14均可以有效地分散和缓冲施加在边框区NA的应力，进而达到保护显示面板300的效果。也就是说，第三实施例的显示面板300可适应不同方向的外部力。
可选的，第一支撑件14a位于第二支撑件14b远离显示区AA的一侧。
由于封装层15在第二支撑件14b的底切空间处断开。因此当第一支撑件14a和第二支撑件14b上的封装层15因外部力而裂开时，裂缝不会蔓延至显示区AA，提高了封装层15的封装效果。
可选的，在一些实施例中，第一支撑件14a和第二支撑件14b内还可以设置有孔洞结构。第一支撑件14a内孔洞结构的数量大于第二支撑件14b内孔洞结构的数量。这样的设置使得第一支撑件14a和第二支撑件14b的形变性能更大，且在滚压器件时使得支撑件14能递进式的缓冲外部力，进而更好的保护显示面板100。
请参照图4，本申请第四实施例提供一种显示面板400，其包括基板11、薄膜晶体管层12、发光器件13、多个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体管层12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141，在显示面板100的厚度方向z上。渐变部分141的宽度呈渐变趋势。
本第四实施例的显示面板400与上述实施例的显示面板100/200/300的不同之处在于：支撑件14包括至少两层子层堆叠形成。
需要说明的是，在一些实施例中，支撑件14还可以包括非渐变部分。非渐变部分和渐变部分141堆叠设置。具体的，一所述子层作为非渐变部分，一所述子层作为渐变部分141。其中，在显示面板400的厚度方向z，非渐变部分的宽度呈非渐变趋势，比如非渐变部分的宽度不变或忽大忽小等。
本第四实施例的显示面板400以支撑件14由渐变部分141形成为例进行阐述。
可选的，在第四实施例中，渐变部分141包括第一渐变部1411和第二渐变部1412。第一渐变部1411包括至少一层所述子层。第二渐变部1412包括至少一层所述子层。第一渐变部1411和第二渐变部1412堆叠形成支撑件14。
可选的，本第四实施例以第一渐变部1411和第二渐变部1412均包括一层所述子层为例进行阐述，但不限于此。
其中，可选的，第一渐变部1411形成于钝化层16。采用钝化层16形成于边框区NA的部分作为第一渐变部1411。也就是说，以钝化层16形成于边框区NA的部分作为第一渐变部1411的所述子层。
第二渐变部1412形成于像素定义层17；也即采用像素定义层17形成于边框区NA的部分作为第二渐变部1412。也就是说，以像素定义层17形成于边框区NA的部分作为第二渐变部1412的所述子层。
其中，渐变部141采用多层子层堆叠形成，以提高支撑件14的高度，便于缩小与显示区AA的高度差，且提高支撑件14的支撑性能。
可选的，在显示面板400的同一厚度方向z上，第一渐变部1411和第二渐变部1412的渐变趋势相同。
比如以图4为示例，从基板11自下而上的厚度方向z上，第一渐变部1411和第二渐变部1412的宽度渐变趋势均为递减。
其中，第一渐变部1411的第一端面d1大于或等于第二渐变部1412的第二端面d2；以提高了渐变部141的稳定性。
可选的，在一些实施例中，第一渐变部1411的第一端面d1也可以小于第二渐变部1412的第二端面d2。
请参照图5，本申请第五实施例提供一种显示面板500，其包括基板11、薄膜晶体管层12、发光器件13、多个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体管层12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141，在显示面板100的厚度方向z上。渐变部分141的宽度呈渐变趋势。
本第五实施例的显示面板500与第四实施例的显示面板400的不同之处在于：从基板11自下而上的厚度方向z上，第一渐变部1411和第二渐变部1412的宽度渐变趋势也可以均为递增。
请参照图6，本申请第六实施例提供一种显示面板600，其包括基板11、薄膜晶体管层12、发光器件13、多个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体管层12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141，在显示面板100的厚度方向z上。渐变部分141的宽度呈渐变趋势。
本第六实施例的显示面板600与第四实施例的显示面板400的不同之处在于：支撑件14包括第一支撑件14a和第二支撑件14b。第一支撑件14a的第一端面d1位于第一支撑件14远离基板11的一面。第二支撑件14b的第一端面d1位于第二支撑件14靠近基板11的一面。
从基板11自下而上的厚度方向z上，第一支撑件14a中的第一渐变部1411和第二渐变部1412的宽度渐变趋势也可以均为递增。第二支撑件14b中的第一渐变部1411和第二渐变部1412的宽度渐变趋势也可以均为递减。
请参照图7，本申请第七实施例提供一种显示面板700，其包括基板11、薄膜晶体管层12、发光器件13、多个支撑件14和封装层15。
薄膜晶体管层12设置在基板11上。发光器件13对应于显示区AA，且设置在薄膜晶体管层12上。封装层15设置发光器件13上。
支撑件14对应于边框区NA。支撑件14设置在基板11上。支撑件14用于承受外部力。一支撑件14包括至少一渐变部分141，在显示面板100的厚度方向z上。渐变部分141的宽度呈渐变趋势。
第七实施例的显示面板700与上述实施例的显示面板400/500/600的不同之处在于：在显示面板700的同一厚度方向z上，第一渐变部1411和第二渐变部1412的渐变趋势相反。
其中，第一渐变部1411宽度渐变趋势为递增。第二渐变部1412宽度渐变趋势为递减。也就是说，支撑件14的两端部均为窄端，以适应不同方向的外部力，且缩小了边框宽度。
由于封装层15在支撑件14的底切空间处断开。因此当支撑件14上的封装层15因外部力而裂开时，裂缝不会蔓延至显示区AA，提高了封装层15的封装效果。
本申请实施例的显示面板，其包括显示区和设置在显示区外的边框区，显示面板包括基板、薄膜晶体管层、发光器件和多个支撑件；薄膜晶体管层设置在基板上；发光器件对应于显示区，且设置在薄膜晶体层上；支撑件对应于边框区，支撑件设置在基板上，支撑件用于承受外部力；一支撑件包括至少一渐变部分，在显示面板的厚度方向上，渐变部分的宽度呈渐变趋势。
其中，本申请采用包含渐变部分的支撑件承受外部力，降低了显示面板的边框区被外部力损伤的风险；另外，当外部力施加在支撑件上时，渐变部分发生形变以降低外部力的影响。
以上对本申请实施例所提供的一种显示面板进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，包括显示区和设置在所述显示区外的边框区，所述显示面板包括：
    基板；
    薄膜晶体管层；所述薄膜晶体管层设置在所述基板上；
    发光器件，所述发光器件对应于所述显示区，且设置在所述薄膜晶体层上；
    至少一个支撑件，所述支撑件对应于所述边框区，所述支撑件设置在所述基板上，所述支撑件用于承受外部力；一所述支撑件包括至少一渐变部分，在所述显示面板的厚度方向上，所述渐变部分的宽度呈渐变趋势。
  2. 根据权利要求1所述的显示面板，其中，在所述显示面板的厚度方向上，所述渐变部分包括背对背设置的第一端面和第二端面，所述第一端面的面积小于所述第二端面的面积。
  3. 根据权利要求2所述的显示面板，其中，所述第一端面为所述支撑件的端部的端面。
  4. 根据权利要求3所述显示面板，其中，所述支撑件由至少一所述渐变部分形成。
  5. 根据权利要求4所述显示面板，其中，所述支撑件由单层膜层形成。
  6. 根据权利要求4所述显示面板，其中，所述支撑件包括至少两层子层堆叠形成。
  7. 根据权利要求5所述显示面板，其中，所述第一端面位于所述支撑件远离所述基板的一面。
  8. 根据权利要求5所述显示面板，其中，所述第一端面位于所述支撑件靠近所述基板的一面。
  9. 根据权利要求5所述显示面板，其中，所述支撑件包括第一支撑件和第二支撑件，所述第一支撑件的第一端面位于所述第一支撑件远离所述基板的一面，所述第二支撑件的第一端面位于所述第二支撑件靠近所述基板的一面。
  10. 根据权利要求9所述显示面板，其中，所述第一支撑件位于所述第二支撑件远离所述显示区的一侧。
  11. 根据权利要求10所述显示面板，其中，所述第一支撑件和所述第二支撑件内还可以设置有孔洞结构，所述第一支撑件内孔洞结构的数量大于所述第二支撑件内孔洞结构的数量。
  12. 根据权利要求6所述显示面板，其中，所述渐变部分包括第一渐变部和第二渐变部；所述第一渐变部包括至少一层所述子层，所述第二渐变部包括至少一层所述子层；所述第一渐变部和所述第二渐变部堆叠形成所述支撑件。
  13. 根据权利要求12所述显示面板，其中，在所述显示面板的同一厚度方向上，所述第一渐变部和所述第二渐变部的渐变趋势相同。
  14. 根据权利要求12所述显示面板，其中，在所述显示面板的同一厚度方向上，所述第一渐变部和所述第二渐变部的渐变趋势相反。
  15. 根据权利要求1所述显示面板，其中，所述渐变部分的材料包括有机材料。
  16. 根据权利要求15所述显示面板，其中，所述显示面板还包括钝化层和设置在所述钝化层上的像素定义层，所述钝化层设置在所述薄膜晶体管层上；
    所述支撑件包括所述钝化层对应于所述边框区的部分和所述像素定义层对应于所述边框区的部分中的至少一者。
  17. 根据权利要求1所述显示面板，其中，所述薄膜晶体管层包括多层绝缘层，至少一层所述绝缘层的部分形成在所述边框区；所述支撑件设置在至少一层所述绝缘层上。
  18. 根据权利要求17所述显示面板，其中，所述薄膜晶体管层还包括遮光层、有源层、栅极层和源漏极层；多层所述绝缘层分别是第一绝缘层、第二绝缘层、第三绝缘层和第四绝缘层；
    所述遮光层设置在所述基板上，所述第一绝缘层设置在所述遮光层上，所述有源层设置在所述第一绝缘层上，所述第二绝缘层设置在所述有源层上，所述栅极层设置在所述第二绝缘层上，所述第三绝缘层设置在所述栅极层上，所述源漏极层设置在所述第三绝缘层上，所述第四绝缘层设置在所述源漏极层上；
    所述第一绝缘层、所述第二绝缘层、所述第三绝缘层和所述第四绝缘层的部分均位于所述边框区，且层叠设置；所述支撑件设置在第四绝缘层上。
  19. 根据权利要求18所述显示面板，其中，所述显示面板还包括封装层，所述封装层覆盖所述发光器件，且至少覆盖所述边框区的部分；
    所述封装层覆盖所述支撑件。
  20. 根据权利要求19所述显示面板，其中，所述显示面板还包括片状构件，所述片状构件设置在所述封装层上且位于所述支撑件的正上方，所述片状构件包括偏光片和盖板中的至少一种。
PCT/CN2021/139945 2021-12-16 2021-12-21 显示面板 WO2023108708A1 (zh)

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US20150179722A1 (en) * 2013-12-19 2015-06-25 Samsung Display Co., Ltd. Organic light emitting display device
CN110085133A (zh) * 2018-01-26 2019-08-02 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板和显示装置
CN110174803A (zh) * 2019-05-10 2019-08-27 深圳市华星光电技术有限公司 阵列基板及其制作方法
CN111162097A (zh) * 2020-01-03 2020-05-15 上海天马有机发光显示技术有限公司 一种显示面板和显示装置
CN111653605A (zh) * 2020-06-23 2020-09-11 昆山国显光电有限公司 显示面板和显示装置

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US20150179722A1 (en) * 2013-12-19 2015-06-25 Samsung Display Co., Ltd. Organic light emitting display device
CN110085133A (zh) * 2018-01-26 2019-08-02 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板和显示装置
CN110174803A (zh) * 2019-05-10 2019-08-27 深圳市华星光电技术有限公司 阵列基板及其制作方法
CN111162097A (zh) * 2020-01-03 2020-05-15 上海天马有机发光显示技术有限公司 一种显示面板和显示装置
CN111653605A (zh) * 2020-06-23 2020-09-11 昆山国显光电有限公司 显示面板和显示装置

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