WO2023093032A1 - 一种石墨烯氧化钼异质结极化激元波前调控器件及方法 - Google Patents

一种石墨烯氧化钼异质结极化激元波前调控器件及方法 Download PDF

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WO2023093032A1
WO2023093032A1 PCT/CN2022/101386 CN2022101386W WO2023093032A1 WO 2023093032 A1 WO2023093032 A1 WO 2023093032A1 CN 2022101386 W CN2022101386 W CN 2022101386W WO 2023093032 A1 WO2023093032 A1 WO 2023093032A1
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graphene
molybdenum oxide
polariton
control device
layer
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French (fr)
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戴庆
胡海
腾汉超
陈娜
曲云鹏
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国家纳米科学中心
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/008—Surface plasmon devices

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  • the invention relates to the technical field of graphene molybdenum oxide heterojunction, more specifically, a graphene molybdenum oxide heterojunction polariton wavefront control device and method, and relates to a graphene molybdenum oxide heterojunction device and its preparation method.
  • topological phase transition of materials has always been a research hotspot in academia.
  • the methods of topological phase transition in the optical field are relatively lacking.
  • molybdenum oxide is a biaxially anisotropic material.
  • the in-plane equi-frequency line is a hyperbolic shape, which can generate phonon polaritons in the hyperbolic wavefront, realize light propagation in a special direction, and suppress the transmission of polarized waves in the vertical direction. Therefore, it has obvious propagation anisotropy and low loss characteristics.
  • the use of hyperbolic phonon polaritons can realize in-plane nano-focusing, negative refraction, metalens and many other applications, so it has important applications in the field of controlling and regulating light in planar optics.
  • Hybrid polariton is a new mode to study the mutual coupling of different polariton modes (including plasmon, phonon, exciton and magneton, etc.). Compared with the single polaritonic mode, the hybrid polaritonic mode combines the advantages of different polaritonic modes.
  • the plasmons that can excite graphene hybridize with the phonon polaritons of molybdenum oxide.
  • This kind of hybrid polaritons combines the tunable performance of plasmonic polaritons and the advantages of low loss of phonon polaritons, and has broad application value in the field of light regulation.
  • the regulation of the polariton transmission wavefront has always been one of the most important research directions in the field of micro-nano optics.
  • topological transformation of polariton wavefronts can be achieved by constructing metamaterials or using double-layer molybdenum oxide corners.
  • shape of its wavefront is relatively determined by the structure of the double-layer molybdenum oxide corners, and it is impossible to dynamically and continuously control the wavefront shape of polaritons at a specific frequency.
  • the use of metamaterials will introduce huge losses, which is not conducive to the transmission of in-plane waves.
  • the present invention provides a graphene molybdenum oxide heterojunction polariton wavefront control device and method
  • the graphene molybdenum oxide heterojunction planar optical device relies on changing the carrier concentration to achieve dynamic continuous Regulate the shape of the polariton wave front, and realize the transformation from an open hyperbolic wave front to a closed elliptical wave front.
  • the present invention provides the following technical solutions:
  • a graphene molybdenum oxide heterojunction polariton wavefront control device the device includes:
  • the metal antenna has a geometric size of 10nm-30um and a thickness of 20nm-5um.
  • the material of the metal antenna is iron, aluminum, copper, gold, silver, platinum, steel;
  • the shape of the metal antenna is a rod, a cuboid, an ellipsoid and the like.
  • the geometric size of the molybdenum oxide thin layer is 1um-50um, and the thickness is 10nm-1um.
  • the graphene covering layer is realized by changing the Fermi level, and the change of the Fermi level is regulated by chemical doping and electrical gate voltage.
  • the electrical grid voltage regulation is realized through the bottom gate structure and the top gate structure, wherein, the applied bias voltage is 0-100V, and the graphene carrier concentration is controlled to be 0-1 ⁇ 10 14 cm -2 ; the chemical Doping adjusts the Fermi level of graphene by introducing gas and the difference in work function between solid material and graphene.
  • the substrate layer includes a silicon dioxide substrate arranged in sequence and a gold substrate arranged on the upper part of the silicon dioxide substrate; the molybdenum oxide thin layer is arranged on the upper part of the gold substrate;
  • the selected incident electromagnetic waves are concentrated in the infrared region, and the main wavenumber in the region is 545-1200cm -1 .
  • the material of the substrate layer includes any flat metal material, inorganic dielectric material, organic polymer material and the like.
  • the metal material includes gold, silver, copper, iron, aluminum;
  • the inorganic dielectric material is selected from silicon dioxide, silicon, quartz, sapphire, germanium, aluminum oxide, boron nitride, calcium fluoride, fluoride Magnesium, gallium arsenide, gallium nitride;
  • the organic polymer material substrate is selected from PET, PMMA, PDMS and plastics.
  • the present invention also provides a method for preparing a graphene molybdenum oxide heterojunction polariton wavefront control device, comprising the following steps:
  • S500 Prepare a metal antenna on graphene, select horizontally polarized light to be incident on the metal antenna, and excite hyperbolic phonon and plasmon hybrid modes in the heterojunction;
  • the present invention discloses a graphene molybdenum oxide heterojunction polariton wavefront control device and method, specifically a carrier-induced graphene Modulating devices and preparation methods for hybrid polariton wavefront topology changes in molybdenum oxide heterojunctions.
  • the graphene carrier concentration can be dynamically adjusted to realize the dynamic adjustment of the wavefront shape of hyperbolic phonon polaritons and plasmonic hybrid modes excited in the heterostructure.
  • the graphene carrier concentration can be dynamically adjusted to realize the dynamic control of the wave front shape of the hybrid polariton—the transformation from an open hyperbolic wave front to a closed elliptical wave front ;
  • the device provided can be applied in the field of planar optics, and the device is miniaturized and easy to integrate;
  • Fig. 1 is the schematic diagram of the structure of the voltage regulation graphene molybdenum oxide heterojunction device provided by the present invention
  • Fig. 2 is the flowchart of the preparation method of the graphene molybdenum oxide heterojunction device provided by the present embodiment 1;
  • Figure 3(a) is the experimental diagram of the hybrid polariton wavefront under the condition of 0.1eV Fermi level under the gold substrate provided in Example 2;
  • Fig. 3 (b) is the Fourier transform effect figure of Fig. 3 (a) that the present embodiment 2 provides;
  • Figure 3(c) is the experimental diagram of the hybrid polariton wavefront under the condition of 0.7eV Fermi level under the gold substrate provided in Example 2;
  • Fig. 3 (d) is the Fourier transform effect diagram of Fig. 3 (c) provided by the present embodiment 2;
  • Figure 4(a) is a simulation diagram of the hybrid polariton wavefront under the condition of 0 Fermi level under the silicon dioxide substrate provided in Example 2;
  • Figure 4(b) is a simulation diagram of the hybrid polariton wavefront under the SiO2 substrate at the Fermi level of 0.9 provided in Example 2;
  • Figure 4(c) is a simulation diagram of the hybrid polariton wavefront under the condition of 0 Fermi level under the gold substrate provided in Example 2;
  • Figure 4(d) is a simulation diagram of the hybrid polariton wavefront under the condition of 0.9 Fermi level under the gold substrate provided in Example 2;
  • Fig. 5 (a) is the dispersion diagram of the x direction under the 0.1 Fermi level provided by the present embodiment 2;
  • Fig. 5 (b) is the dispersion diagram of the x direction under the 0.5 Fermi level provided by the present embodiment 2;
  • Fig. 5 (c) is the dispersion diagram of the y direction under the 0.1 Fermi level provided by the present embodiment 2;
  • Figure 5(d) is the dispersion diagram in the y direction under the 0.5 Fermi level provided by the present embodiment 2;
  • Figure 6(a) is the experimental image of graphene molybdenum oxide heterojunction hybrid polariton wavefront at different frequencies at 0.3eV provided in Example 2;
  • Fig. 6(b) is the experimental image of the graphene molybdenum oxide heterojunction hybrid polariton wavefront at different frequencies at 0.4eV provided in Example 2.
  • Embodiment 1 of the present invention discloses a graphene molybdenum oxide heterojunction polariton wavefront control device, which includes:
  • Graphene covering layer 106, molybdenum oxide thin layer 102, silicon dioxide substrate 100 and gold substrate 101 arranged on the upper part of the silicon dioxide substrate are arranged in sequence from top to bottom, and molybdenum oxide thin layer is arranged on the upper part of the gold substrate 101 102, a metal antenna 103 and a bottom grid structure 107 are arranged on the graphene covering layer 106;
  • the metal antenna 103 is provided with a mid-infrared scattering scanning near-field optical microscope tip 104 , and plasmons are excited by scattered light from the mid-infrared scattering scanning near-field optical microscope tip 104 .
  • an infrared beam 105 is also provided, and the infrared beam 105 comes from a quantum cascade laser QCM in the instrument, and a commercial instrument SNOM can be used as a specific instrument.
  • the metal antenna 103 has a geometric size of 10nm-30um and a thickness of 20nm-5um.
  • the material of the metal antenna 103 is iron, aluminum, copper, gold, silver, platinum, steel;
  • the shape of the metal antenna 103 is a rod, a cuboid, an ellipsoid, and the like.
  • the geometric size of the molybdenum oxide thin layer 102 is 1um-50um, and the thickness is 10nm-1um.
  • the graphene capping layer 106 is realized by changing the Fermi energy level, and the change of the Fermi energy level is regulated by chemical doping and electrical gate voltage.
  • the bottom gate structure is an ion gel structure placed on the upper surface of graphene, which is similar to the bottom gate structure, wherein, the applied bias voltage is 0-100V, and the graphene carrier concentration is adjusted to 0-100V. 1 ⁇ 10 14 cm -2 .
  • the regulation of the electrical gate voltage is realized through the bottom gate structure 107 and the top gate structure, wherein, the applied bias voltage is 0-100V, and the graphene carrier concentration is controlled to be 0-1 ⁇ 10 14 cm -2 ; Said chemical doping controls the Fermi energy level of graphene by introducing gas and the work function difference between solid material and graphene.
  • the materials of the silicon dioxide substrate 100 and the gold substrate 101 include any flat metal material, inorganic dielectric material, organic polymer material, and the like.
  • the metal material includes gold, silver, copper, iron, aluminum
  • the inorganic dielectric material is selected from silicon dioxide, silicon, quartz, sapphire, germanium, aluminum oxide, boron nitride, calcium fluoride, magnesium fluoride, arsenic Gallium nitride, gallium nitride
  • organic polymer material substrates are selected from PET, PMMA, PDMS and plastics.
  • the selected incident electromagnetic waves are concentrated in the infrared region, and the main wavenumber in the region is 545-1200cm -1 .
  • Embodiment 1 of the present invention also discloses a method for preparing a graphene molybdenum oxide heterojunction polariton wavefront control device, comprising the following steps:
  • S500 Prepare a metal antenna on graphene, select horizontally polarized light to be incident on the metal antenna, and excite hyperbolic phonon and plasmon hybrid modes in the heterojunction;
  • the present invention discloses a graphene molybdenum oxide heterojunction polariton wavefront control device and method, specifically a carrier-induced graphene Modulating devices and preparation methods for hybrid polariton wavefront topology changes in molybdenum oxide heterojunctions.
  • the graphene carrier concentration can be dynamically adjusted to realize the dynamic adjustment of the wavefront shape of hyperbolic phonon polaritons and plasmonic hybrid modes excited in the heterostructure.
  • the graphene carrier concentration can be dynamically adjusted to realize the dynamic control of the wave front shape of the hybrid polariton—the transformation from an open hyperbolic wave front to a closed elliptical wave front ;
  • the device provided can be applied in the field of planar optics, and the device is miniaturized and easy to integrate;
  • FIG. 3 for the experimental diagram of the hybrid polariton wavefront of graphene induced by carriers at the Fermi level of 0.1 and 0.7 at an incident wave number of 910 cm -1 . From the experimental diagrams of Figure 3a and Figure 3c, it can be clearly seen that the wavefront shape of the hybrid polariton changes from hyperbolic to elliptical. In addition, through the Fourier transform diagrams of Figure 3b and Figure 3d, in the inverted space The carrier-induced topological change of the graphene molybdenum oxide heterojunction hybrid polariton wavefront was further verified.
  • Fig. 5(a) - Fig. 5(b) show the dispersion diagrams in the x direction at the Fermi level of 0.1eV and 0.5eV.
  • Accompanying drawing 5(c)-accompanying drawing 5(d) have shown the dispersion diagram of y direction under 0.1eV and 0.5eV Fermi levels. It can be clearly seen that as the graphene carrier concentration increases, there is a topological transition from no wavevector to wavevector in the y direction.
  • accompanying drawing 6(a) shows the experimental image of graphene molybdenum oxide heterojunction hybrid polariton wavefront at different frequencies at 0.3eV.
  • Figure 6(b) shows the experimental images of graphene molybdenum oxide heterojunction hybrid polariton wavefronts at different frequencies at 0.4eV. It can be clearly seen that the graphene molybdenum oxide heterojunction hybrid polaritons can still be excited under different incident frequencies, which reflects the broad spectrum of the device.
  • each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same and similar parts of each embodiment can be referred to each other.
  • the description is relatively simple, and for relevant details, please refer to the description of the method part.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

一种石墨烯氧化钼异质结极化激元波前调控器件及方法，包括自上而下依次设置的石墨烯覆盖层（106）、氧化钼薄层（102）和衬底层（100、101），石墨烯覆盖层（106）上设置有金属天线（103），依靠化学掺杂或者电学栅压动态调控石墨烯的载流子浓度，从而实现异质结构中激发的双曲声子极化激元和等离激元杂化模式波前形状的动态调控以及拓扑转变。依靠改变载流子浓度的手段实现了动态调控石墨烯氧化钼异质结杂化激元的波前形状，方法简单易行，调控手段灵活精确。

Description

一种石墨烯氧化钼异质结极化激元波前调控器件及方法 技术领域
本发明涉及石墨烯氧化钼异质结技术领域，更具体的说是一种石墨烯氧化钼异质结极化激元波前调控器件及方法并涉及石墨烯氧化钼异质结器件及其制备方法。
背景技术
在凝聚态物理中，材料能带费米面的形状改变(拓扑变化)直接影响材料的电学性能，从而导致超导、拓扑绝缘体等一系列新颖的物理现象的出现。因此，材料的拓扑相变一直是学术界的研究热点。相对于电子体系的拓扑相变，光学领域的拓扑相变手段较为缺乏。近期随着光学转角体系拓扑相变研究的兴起，其对光子的调控提供了一个全新的维度，对光学成像，光子集成以及量子光学产生重要的影响。
不同于石墨烯与氮化硼等二维材料，氧化钼是一种双轴各向异性材料。在红外波段内其面内等频线是双曲形状，可以产生的双曲波前的声子极化激元，实现光沿在某一特殊方向传播，同时抑制垂直方向的极化波传输。因此，具有明显的传播各向异性以及低损耗的特性。目前，利用双曲声子激元可以实现平面内的纳米聚焦，负折射，超透镜等多方面的应用，因而在平面光学中控制与调控光领域具有重要的应用。
杂化激元是研究不同极化激元模式(包括等离激元，声子激元，激子激元以及磁子激元等)相互耦合的一种新模式。相比于单一的激元模式，杂化激元模式融合了不同激元模式的优点。在石墨烯氧化钼异质结构中，可以激发石墨烯的等离激元与氧化钼的声子极化激元进行杂化。这种杂化激元融合了等离激元载流子可调的性能以及声子激元低损耗的优点，在光调控领域具有较为广阔的应用价值。
对于极化激元传输波前的调控一直以来都是微纳光学领最为重要的研究方向之一。在现有技术中，依靠构造超材料或者是使用双层氧化钼转角可以 实现极化激元波前的拓扑转变。但是，其波前形状由双层氧化钼转角的结构相对确定，无法实现在特定频率下动态连续调控极化激元的波前形状。另一方面，利用超材料会引入巨大的损耗，不利于平面内波的传输。
为了解决上述问题，如何提供一种石墨烯氧化钼异质结极化激元波前调控器件及方法是本领域技术人员亟需解决的问题。
发明内容
有鉴于此，本发明提供了一种石墨烯氧化钼异质结极化激元波前调控器件及方法，该器件石墨烯氧化钼异质结平面光学器件依靠改变载流子浓度从而实现动态连续调控极化激元波前形状，并且实现由开口的双曲波前面到闭合的椭圆波前面的转化。
为了实现上述目的，本发明提供如下技术方案：
一种石墨烯氧化钼异质结极化激元波前调控器件，该器件包括：
自上而下依次设置的石墨烯覆盖层、氧化钼薄层和衬底层，所述石墨烯覆盖层上设置有金属天线；
优选的，所述金属天线的几何尺寸为10nm-30um，厚度20nm-5um。
更优的，所述金属天线的材料为自铁、铝、铜、金、银、铂、钢；
更优的，所述金属天线的形状为棒状、长方体，椭圆体等。
优选的，所述氧化钼薄层的几何尺寸为1um-50um，厚度为10nm-1um。
优选的，所述石墨烯覆盖层通过费米能级变化实现，所述费米能级变化通过化学掺杂以及电学栅压调控。
优选的，所述电学栅压调控通过底栅结构以及顶栅结构实现，其中，施加的偏压0-100V，调控石墨烯载流子浓度为0-1×10 14cm -2；所述化学掺杂通过引入气体以及固体材料与石墨烯功函数差别进行石墨烯费米能级调控。
优选的，所述衬底层包括依次设置的二氧化硅衬底以及设置在所述二氧化硅衬底上部的金衬底；所述金衬底上部设置所述氧化钼薄层；
所选用入射的电磁波集中在红外区域，所述区域主要波数为545-1200cm -1。
更优的，所述衬底层的材料包括任意平整的金属材料、无机介电材料和有机高分子材料等。
更优的，金属材料包括金、银、铜、铁、铝；所述无机介电材料选自二氧化硅、硅、石英、蓝宝石、锗、氧化铝、氮化硼、氟化钙、氟化镁、砷化镓、氮化镓；所述有机高分子材料衬底选自PET、PMMA、PDMS和塑料等。
另一方面，本发明还提供了一种石墨烯氧化钼异质结极化激元波前调控器件的制备方法，包括如下步骤：
S100：制备氧化钼薄层；
S200：制作金属天线；
S300：制备衬底层，将样品氧化钼置于所述衬底层上；
S400：制备单层石墨烯，并将石墨烯转移到氧化钼上，制备上层介质层和转移金属电极形成底栅结构；
S500：制备金属天线于石墨烯上，选择水平偏振光入射到金属天线上，激发异质结中双曲声子激元和等离激元杂化模式；
S600：改变化学掺杂或者电学栅压大小，调控石墨烯载流子浓度，得到不同形状的极化激元波前。
经由上述的技术方案可知，与现有技术相比，本发明公开提供了一种石墨烯氧化钼异质结极化激元波前调控器件及方法，具体说是一种载流子诱导石墨烯氧化钼异质结中杂化激元波前拓扑变化的调控器件及其制备方法。通过改变化学掺杂或者电学栅压大小，动态调控石墨烯载流子浓度，实现异质结构中激发的双曲声子激元和等离激元杂化模式波前形状的动态调控。具体有益效果如下：
(1)通过改变化学掺杂或者电学栅压大小，动态调节石墨烯载流子浓度，实现杂化激元的波前形状动态调控—由开口的双曲波前面到闭合的椭圆波前面的转化；
(2)结合了石墨烯等离激元以及声子极化激元的优点，实现了动态调控，低损耗的传播；
(3)所提供的器件可以应用于平面光学领域，器件小型化易于集成；
(4)通过选用的石墨烯与氧化钼，避免了构造人工超材料加工引入的缺陷所带来的损耗。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1为本发明提供的电压调控石墨烯氧化钼异质结器件结构示意图；
图2为本实施例1提供的石墨烯氧化钼异质结器件制备方法流程图；
图3(a)为实施例2提供的金衬底下0.1eV费米能级情况下杂化激元波前的实验图；
图3(b)为本实施例2提供的图3(a)的傅里叶变换效果图；
图3(c)为本实施例2提供的金衬底下0.7eV费米能级情况下杂化激元波前的实验图；
图3(d)为本实施例2提供的图3(c)的傅里叶变换效果图；
图4(a)为本实施例2提供的二氧化硅衬底下0费米能级情况下杂化激元波前的模拟图；
图4(b)为本实施例2提供的二氧化硅衬底下0.9费米能级情况下杂化激元波前的模拟图；
图4(c)为本实施例2提供的金衬底下0费米能级情况下杂化激元波前的模拟图；
图4(d)为本实施例2提供的金衬底下0.9费米能级情况下杂化激元波前的模拟图；
图5(a)为本实施例2提供的0.1费米能级下x方向的色散图；
图5(b)为本实施例2提供的0.5费米能级下x方向的色散图；
图5(c)为本实施例2提供的0.1费米能级下y方向的色散图；
图5(d)为本实施例2提供的0.5费米能级下y方向的色散图；
图6(a)为本实施例2提供的0.3eV下不同频率下石墨烯氧化钼异质结杂化激元波前的实验图像；
图6(b)为本实施例2提供的0.4eV下不同频率下石墨烯氧化钼异质结杂化激元波前的实验图像。
在附图1中，100-二氧化硅衬底、101-金衬底、102-氧化钼薄层、103-金属天线、104-中红外散射型扫描近场光学显微镜针尖、105-红外光束、106-石墨烯覆盖层，107-底栅结构。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1
参见附图1所示，本发明实施例1公开了一种石墨烯氧化钼异质结极化激元波前调控器件，该器件包括：
自上而下依次设置的石墨烯覆盖层106、氧化钼薄层102和二氧化硅衬底100以及设置在二氧化硅衬底上部的金衬底101，金衬底101上部设置氧化钼薄层102，石墨烯覆盖层106上设置有金属天线103、底栅结构107；
具体的，金属天线103设置有中红外散射型扫描近场光学显微镜针尖104，通过中红外散射型扫描近场光学显微镜针尖104的散射光激发等离激元。
具体的，还具有红外光束105，该红外光束105来自于仪器中的量子级联激光器QCM，具体仪器可以采用商业的仪器SNOM。
在一个具体实施例中，金属天线103的几何尺寸为10nm-30um，厚度20nm-5um。
具体的，金属天线103的材料为自铁、铝、铜、金、银、铂、钢；
具体的，金属天线103的形状为棒状、长方体，椭圆体等。
在一个具体实施例中，氧化钼薄层102的几何尺寸为1um-50um，厚度为10nm-1um。
在一个具体实施例中，石墨烯覆盖层106通过费米能级变化实现，费米能级变化通过化学掺杂以及电学栅压调控。
具体的，还包括顶栅结构，底栅结构为离子凝胶结构置于石墨烯上表面，结构与底栅类似，其中，施加的偏压0-100V，调控石墨烯载流子浓度为0-1×10 14cm -2。
在一个具体实施例中，电学栅压调控通过底栅结构107以及顶栅结构实现，其中，施加的偏压0-100V，调控石墨烯载流子浓度为0-1×10 14cm -2；所述化学掺杂通过引入气体以及固体材料与石墨烯功函数差别进行石墨烯费米能级调控。
在一个具体实施例中，二氧化硅衬底100以及金衬底101的材料包括任意平整的金属材料、无机介电材料和有机高分子材料等。
具体的，金属材料包括金、银、铜、铁、铝；无机介电材料选自二氧化硅、硅、石英、蓝宝石、锗、氧化铝、氮化硼、氟化钙、氟化镁、砷化镓、氮化镓；有机高分子材料衬底选自PET、PMMA、PDMS和塑料等。
具体的，所选用入射的电磁波集中在红外区域，区域主要波数为545-1200cm -1。
参见附图2所示，另一方面，本发明实施例1还公开了一种石墨烯氧化钼异质结极化激元波前调控器件的制备方法，包括如下步骤：
S100：制备氧化钼薄层；
S200：制作金属天线；
S300：制备衬底层，将样品氧化钼置于衬底层上；
S400：制备单层石墨烯，并将石墨烯转移到氧化钼上，制备上层介质层和转移金属电极形成底栅结构；
S500：制备金属天线于石墨烯上，选择水平偏振光入射到金属天线上，激发异质结中双曲声子激元和等离激元杂化模式；
S600：改变化学掺杂或者电学栅压大小，调控石墨烯载流子浓度，得到不同形状的极化激元波前。
经由上述的技术方案可知，与现有技术相比，本发明公开提供了一种石墨烯氧化钼异质结极化激元波前调控器件及方法，具体说是一种载流子诱导石墨烯氧化钼异质结中杂化激元波前拓扑变化的调控器件及其制备方法。通过改变化学掺杂或者电学栅压大小，动态调控石墨烯载流子浓度，实现异质结构中激发的双曲声子激元和等离激元杂化模式波前形状的动态调控。具体有益效果如下：
(1)通过改变化学掺杂或者电学栅压大小，动态调节石墨烯载流子浓度，实现杂化激元的波前形状动态调控—由开口的双曲波前面到闭合的椭圆波前面的转化；
(2)结合了石墨烯等离激元以及声子极化激元的优点，实现了动态调控，低损耗的传播；
(3)所提供的器件可以应用于平面光学领域，器件小型化易于集成；
(4)通过选用的石墨烯与氧化钼，避免了构造人工超材料加工引入的缺陷所带来的损耗。
实施例2
参见附图3所示，在入射波数为910cm -1下，载流子诱导下石墨烯在0.1,0.7费米能级情况下杂化激元波前的实验图。由附图3a和附图3c实验图可以明显看到杂化激元的波前形状由双曲到椭圆的变化，另外，通过附图3b以及附图3d的傅里叶变换图，在倒空间进一步验证了载流子诱导石墨烯氧化钼异质结杂化激元波前拓扑变化。
参见附图4所示，附图4(a)-附图4(b)分别代表二氧化硅衬底下0eV、0.9eV费米能级情况下杂化激元波前的模拟图；附图4(c)-附图4
(d)分别代表金衬底下0eV、0.9eV费米能级情况下杂化激元波前的模拟图；可以看出通过显示仿真模拟不同偏压下造成不同石墨烯载流子浓度变化，从而实现石墨烯氧化钼异质结杂化激元波前拓扑转变的模拟图。
参见附图5所示，附图5(a)-附图5(b)显示了0.1eV及0.5eV费米能级下x方向的色散图。附图5(c)-附图5(d)显示了0.1eV及0.5eV费 米能级下y方向的色散图。可以明显看到，随着石墨烯载流子浓度的增加，y方向出现没有波矢到有波矢的拓扑转变。
参见附图6(a)-附图6(b)，附图6(a)显示了0.3eV下不同频率下石墨烯氧化钼异质结杂化激元波前的实验图像。附图6(b)显示了0.4eV下不同频率下石墨烯氧化钼异质结杂化激元波前的实验图像。可以明显看到，不同入射频率下依然可以激发石墨烯氧化钼异质结杂化激元，从而体现该器件的宽光谱性。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。对于实施例公开的装置而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (7)

  1. 一种石墨烯氧化钼异质结极化激元波前调控器件，其特征在于，该器件包括：
    自上而下依次设置的石墨烯覆盖层、氧化钼薄层和衬底层，所述石墨烯覆盖层上设置有金属天线。
  2. 根据权利要求1所述的一种石墨烯氧化钼异质结极化激元波前调控器件，其特征在于，所述金属天线的几何尺寸为10nm-30um，厚度20nm-5um。
  3. 根据权利要求1所述的一种石墨烯氧化钼异质结极化激元波前调控器件，其特征在于，所述氧化钼薄层的几何尺寸为1um-50um，厚度为10nm-1um。
  4. 根据权利要求1所述的一种石墨烯氧化钼异质结极化激元波前调控器件，其特征在于，所述石墨烯覆盖层通过费米能级变化实现，所述费米能级变化通过化学掺杂以及电学栅压调控。
  5. 根据权利要求4所述的一种石墨烯氧化钼异质结极化激元波前调控器件，其特征在于，所述电学栅压调控通过底栅结构以及顶栅结构实现，其中，施加的偏压0-100V，调控石墨烯载流子浓度为0-1×10 14cm -2；所述化学掺杂通过引入气体以及固体材料与石墨烯功函数差别进行石墨烯费米能级调控。
  6. 根据权利要求1所述的一种石墨烯氧化钼异质结极化激元波前调控器件，其特征在于，所述衬底层包括依次设置的二氧化硅衬底以及金衬底；所述金衬底上部设置所述氧化钼薄层；
    所选用入射的电磁波集中在红外区域，所述区域主要波数为545-1200cm -1。
  7. 一种石墨烯氧化钼异质结极化激元波前调控器件的制备方法，其特征在于，包括如下步骤：
    S100：制备氧化钼薄层；
    S200：制作金属天线；
    S300：制备衬底层，将样品氧化钼置于所述衬底层上；
    S400：制备单层石墨烯，并将石墨烯转移到氧化钼上，制备上层介质层和转移金属电极形成底栅结构；
    S500：制备金属天线于石墨烯上，选择水平偏振光入射到金属天线上，激发异质结中双曲声子激元和等离激元杂化模式；
    S600：改变化学掺杂或者电学栅压大小，调控石墨烯载流子浓度，得到不同形状的极化激元波前。
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