WO2023090039A1 - Résonateur diélectrique et filtre diélectrique - Google Patents

Résonateur diélectrique et filtre diélectrique Download PDF

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Publication number
WO2023090039A1
WO2023090039A1 PCT/JP2022/038990 JP2022038990W WO2023090039A1 WO 2023090039 A1 WO2023090039 A1 WO 2023090039A1 JP 2022038990 W JP2022038990 W JP 2022038990W WO 2023090039 A1 WO2023090039 A1 WO 2023090039A1
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WIPO (PCT)
Prior art keywords
electrode elements
conductive member
resonance
capacitive
stacking direction
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PCT/JP2022/038990
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English (en)
Japanese (ja)
Inventor
一生 山元
雅司 荒井
達典 菅
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株式会社村田製作所
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Publication of WO2023090039A1 publication Critical patent/WO2023090039A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/10—Dielectric resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks

Definitions

  • the present disclosure relates to a dielectric resonator and a bandpass filter using the dielectric resonator (hereinafter also referred to as "dielectric filter").
  • Patent Document 1 describes a bandpass filter using a dielectric resonator.
  • This filter includes a rectangular parallelepiped laminated body formed by laminating a plurality of dielectric layers in the lamination direction, and first terminals and second terminals arranged on first and second side surfaces facing each other of the laminated body, respectively. It includes a terminal, and a resonant section and a capacitive section arranged inside the laminate.
  • the resonance part is formed by a plurality of electrode elements stacked in the stacking direction, and is connected to the first terminal and separated from the second terminal.
  • the electrode elements in the upper layer and the electrode elements in the lower layer protrude toward the second terminal side more than the other electrode elements.
  • the capacitive section is formed by one electrode element, is connected to the second terminal, and extends between the electrode element in the upper layer and the electrode element in the lower layer of the resonator section. A gap in the stacking direction with the electrode element forms a capacitance with the resonator.
  • the resonance section and the capacitance section As a countermeasure, it is possible to arrange the resonance section and the capacitance section so as to face each other in a direction orthogonal to the stacking direction, and form the capacitance by the gap (distance) between the ends of the resonance section and the capacitance section facing each other. Conceivable.
  • the distance between the opposing ends may change if the resonance section or the capacitor section is displaced in the stacking direction due to the effect of distortion in the stacking direction. can occur.
  • the electrode elements of the resonator section and the capacitor section are formed by printing, the distance between the opposing ends may vary due to blurring or fading of the printing, which may cause variations in capacitance.
  • the present disclosure has been made in order to solve such problems, and its object is to arrange a resonator section and a capacitor section inside a laminate so as to face each other in a direction perpendicular to the lamination direction.
  • a dielectric resonator or a dielectric filter that forms a capacitance by it is difficult to cause variation in capacitance.
  • a dielectric resonator according to the present disclosure is formed by stacking a plurality of dielectric layers in a stacking direction, and has a rectangular parallelepiped laminate having a first side surface and a second side surface perpendicular to a first direction orthogonal to the stacking direction. , a first terminal and a second terminal respectively arranged on the first side surface and the second side surface of the laminate; a resonance part including a plurality of resonance electrode elements spaced apart from the terminals; and a plurality of capacitance electrodes stacked in the stacking direction in a region inside the laminate, each connected to the second terminal and spaced from the first terminal. a capacitive section including the element.
  • One ends of the plurality of resonant electrode elements are arranged to face one ends of the plurality of capacitive electrode elements in the first direction.
  • a conductive member is disposed on at least one end of at least one of the plurality of resonant electrode elements and one end of at least one of the plurality of capacitive electrode elements.
  • the length of the conductive member in the stacking direction is longer than the thickness of each of the plurality of resonant electrode elements and the thickness of each of the plurality of capacitive electrode elements.
  • a dielectric resonator or a dielectric filter that forms a capacitance by arranging a resonator portion and a capacitor portion inside a laminate so as to face each other in a direction orthogonal to the stacking direction, variation in capacitance can be made less likely to occur.
  • FIG. 1 is a block diagram of a communication device; FIG. It is an external appearance perspective view of a filter apparatus.
  • FIG. 4 is a see-through perspective view showing the internal structure of the filter device; It is an example (1) of sectional drawing of a filter apparatus. It is an example (the 2) of sectional drawing of a filter apparatus. It is an example (the 3) of sectional drawing of a filter apparatus.
  • FIG. 11 is a top view of a via formed in the resonance electrode element of the uppermost layer and a via formed in the capacitive electrode element of the uppermost layer of the filter device (No. 1); It is an example (the 4) of sectional drawing of a filter apparatus.
  • FIG. 4 is a see-through perspective view showing the internal structure of the filter device; It is an example (1) of sectional drawing of a filter apparatus. It is an example (the 2) of sectional drawing of a filter apparatus. It is an example (the 3) of sectional drawing of a filter apparatus.
  • FIG. 11 is a top view of
  • FIG. 11 is a top view of a via formed in the resonance electrode element of the uppermost layer and a via formed in the capacitive electrode element of the uppermost layer of the filter device (part 2); It is an example (the 5) of sectional drawing of a filter apparatus.
  • FIG. 4 is a top view of a through hole formed in a resonance electrode element of the filter device;
  • FIG. 1 is a block diagram of a communication device 10 having a high-frequency front-end circuit 20 to which a filter device using dielectric resonators according to this embodiment is applied.
  • the communication device 10 is, for example, a mobile terminal typified by a smart phone, or a mobile phone base station.
  • communication device 10 includes antenna 12 , high frequency front end circuit 20 , mixer 30 , local oscillator 32 , D/A converter (DAC) 40 and RF circuit 50 .
  • High frequency front end circuit 20 also includes bandpass filters 22 and 28 , amplifier 24 and attenuator 26 .
  • the high-frequency front-end circuit 20 includes a transmission circuit that transmits a high-frequency signal from the antenna 12 will be described. may contain
  • the communication device 10 up-converts the signal transmitted from the RF circuit 50 into a high-frequency signal and radiates it from the antenna 12 .
  • a modulated digital signal output from the RF circuit 50 is converted to an analog signal by the D/A converter 40 .
  • the mixer 30 mixes the signal analog-converted by the D/A converter 40 with the oscillation signal from the local oscillator 32 and up-converts it into a high-frequency signal.
  • a band-pass filter 28 removes unnecessary waves generated by the up-conversion and extracts only signals in a desired frequency band.
  • Attenuator 26 adjusts the strength of the transmitted signal.
  • Amplifier 24 power-amplifies the transmission signal that has passed through attenuator 26 to a predetermined level.
  • the band-pass filter 22 removes unwanted waves generated in the amplification process and allows only signal components in the frequency band specified by the communication standard to pass.
  • a transmission signal that has passed through the bandpass filter 22 is radiated from the antenna 12 .
  • a filter device corresponding to the present disclosure can be employed as the bandpass filters 22 and 28 in the communication device 10 as described above.
  • FIG. Filter device 100 is a dielectric filter composed of a plurality of dielectric resonators.
  • FIG. 2 is an external perspective view of the filter device 100.
  • FIG. 3 is a see-through perspective view showing the internal structure of the filter device 100. As shown in FIG.
  • filter device 100 includes a rectangular parallelepiped or substantially rectangular parallelepiped laminate 110 formed by laminating a plurality of dielectric layers in the lamination direction.
  • Each dielectric layer of the laminate 110 is made of ceramic such as low temperature co-fired ceramics (LTCC).
  • LTCC low temperature co-fired ceramics
  • the material of the laminate 110 is not necessarily limited to ceramic, and may be resin, for example.
  • a plurality of electrodes formed on each dielectric layer and a plurality of vias formed between the dielectric layers provide resonance electrode elements forming a resonance section, and between the resonance electrode elements.
  • Capacitors and inductors are formed for coupling.
  • the term "via” refers to a conductor extending in the stacking direction. Vias are formed, for example, by conductive paste, plating, and/or metal pins.
  • the stacking direction of the stack 110 will be referred to as the "Z-axis direction", and the direction perpendicular to the Z-axis direction and along the short side of the stack 110 will be referred to as the “Y-axis direction” (first direction). ), and the direction orthogonal to the Z-axis direction (stacking direction) and the Y-axis direction (first direction) is defined as the “X-axis direction”.
  • the positive direction of the Z-axis in each drawing may be referred to as the upper side, and the negative direction may be referred to as the lower side.
  • shield terminals 121 and 122 are arranged so as to cover side surfaces 115 and 116 of the laminate 110 perpendicular to the Y-axis direction.
  • the shield terminals 121 and 122 have a substantially C shape when viewed from the X-axis direction of the laminate 110 . That is, shield terminals 121 and 122 partially cover top surface 111 and bottom surface 112 of laminate 110 . Portions of the shield terminals 121 and 122 located on the lower surface 112 of the laminate 110 are connected to a ground electrode on a mounting substrate (not shown) by connecting members such as solder bumps. That is, the shield terminals 121 and 122 also function as ground terminals.
  • an input terminal T1 and an output terminal T2 are arranged on the lower surface 112 of the laminate 110 .
  • the input terminal T1 is arranged on the bottom surface 112 at a position close to the side surface 113 in the positive direction of the X axis.
  • the output terminal T2 is arranged on the bottom surface 112 at a position close to the side surface 114 in the negative direction of the X axis.
  • the input terminal T1 and the output terminal T2 are connected to corresponding electrodes on the mounting substrate by connecting members such as solder bumps.
  • filter device 100 includes plate electrodes 130 and 135, a plurality of resonators R1 to R5, connection conductors 151 to 155 and 171 to 175 in addition to the configuration shown in FIG. , and a plurality of capacitors C1 to C5.
  • the connection conductors 151 to 155 and 171 to 175 may be omitted.
  • the plate electrodes 130 and 135 are arranged inside the laminate 110 at positions spaced apart in the lamination direction (Z-axis direction) so as to face each other.
  • the plate electrode 130 is formed on the dielectric layer near the top surface 111 and is connected to the shield terminals 121 and 122 at the ends along the X-axis.
  • the flat plate electrode 130 has such a shape as to substantially cover the upper surface 111 of the laminate 110 when viewed from above in the stacking direction.
  • the plate electrode 135 is formed on the dielectric layer near the bottom surface 112 .
  • the flat plate electrode 135 has a substantially H shape in which cutout portions are formed in portions facing the input terminal T1 and the output terminal T2 when viewed from above in the stacking direction.
  • the flat plate electrode 135 is also connected to the shield terminals 121 and 122 at its ends along the X axis.
  • a plurality of resonance parts R1 to R5 are arranged in a region between the plate electrode 130 and the plate electrode 135 inside the laminate 110 .
  • a plurality of resonance parts R1 to R5 are arranged side by side with a predetermined distance therebetween in the X-axis direction. More specifically, the resonators R1, R2, R3, R4, and R5 are arranged in this order from the positive direction to the negative direction of the X-axis.
  • Each of the resonance sections R1 to R5 extends in the Y-axis direction, and the end of each resonance section in the positive direction of the Y-axis is connected to the shield terminal 121 .
  • the negative end of the Y-axis in each resonance part is separated from the shield terminal 122 .
  • the resonance part R1 is formed by a plurality of (five in the example shown in FIG. 3) resonance electrode elements 141 stacked in the stacking direction.
  • the resonance part R2 is formed by a plurality of resonance electrode elements 142 laminated in the lamination direction
  • the resonance part R3 is formed by a plurality of resonance electrode elements 143 laminated in the lamination direction
  • the resonance part R4 is formed by a plurality of resonance electrode elements 143 laminated in the lamination direction. It is formed by a plurality of stacked resonance electrode elements 144
  • the resonance part R5 is formed by a plurality of resonance electrode elements 145 stacked in the stacking direction.
  • the widths (dimensions in the X-axis direction) of the plurality of resonance electrode elements 141 are the same, but the widths of the elements formed in the uppermost layer and the lowermost layer of the plurality of resonance electrode elements 141 are, for example, , the width of the element formed in the layer near the center may be made smaller.
  • the other resonant electrode elements 142-145 are the same.
  • connection conductors 151 to 155 are connected to the flat plate electrodes 130 and 135 via connection conductors 151 to 155 at positions near the ends in the positive direction of the Y axis.
  • each connection conductor 151-155 extends from the flat plate electrode 130 to the flat plate electrode 135 through a plurality of elements of the corresponding resonance section.
  • Each connection conductor 151 to 155 is electrically connected to a corresponding plurality of resonators.
  • connection conductors 171 to 175 are electrically connected by connection conductors 171 to 175 at positions near the ends in the negative direction of the Y axis.
  • the distance between the connection conductor 151 and the negative end of the resonance electrode element 141 in the Y-axis direction is set to ⁇ /4.
  • the resonators R1 to R5 are central conductors made up of a plurality of conductors, and function as distributed constant type TEM mode resonators with the flat plate electrodes 130 and 135 as outer conductors.
  • the lowest layer element among the plurality of resonant electrode elements 141 forming the resonant portion R1 is connected to the input terminal T1 via the vias V10 and V11 and the plate electrode PL1.
  • the lowest layer element among the plurality of resonance electrode elements 145 forming the resonance section R5 is connected to the output terminal T2 via a via and a plate electrode.
  • the resonators R1 to R5 are magnetically coupled to each other, and a high-frequency signal input to the input terminal T1 is transmitted by the resonators R1 to R5 and output from the output terminal T2.
  • the filter device 100 functions as a band-pass filter by generating an attenuation pole depending on the degree of coupling between the resonating portions.
  • the capacitive sections C1 to C5 are arranged so as to face the ends of the resonance sections R1 to R5 in the negative direction of the Y axis, respectively. That is, the positive Y-axis end of each of the capacitance sections C1 to C5 faces the negative Y-axis end of the corresponding resonance section with a predetermined distance therebetween in the Y-axis direction.
  • the negative end of the Y-axis of each of the capacitive sections C1 to C5 is connected to the shield terminal 122 .
  • the positive Y-axis end of each capacitive section forms a capacitance with the negative Y-axis negative Y-axis end of the resonance section opposed in the Y-axis direction.
  • the capacitance can be adjusted by adjusting the size of the gap GP in the Y-axis direction between each capacitive section and each resonant section.
  • the capacitive part C1 is formed by a plurality of capacitive electrode elements 161 (five in the example shown in FIG. 3) laminated in the lamination direction.
  • the capacitive section C2 is formed by a plurality of capacitive electrode elements 162 laminated in the laminating direction
  • the capacitive section C3 is formed by a plurality of capacitive electrode elements 163 laminated in the laminating direction
  • the capacitive section C4 is formed by a plurality of capacitive electrode elements 163 laminated in the laminating direction. It is formed by a plurality of laminated capacitive electrode elements 164
  • the capacitive section C5 is formed by a plurality of capacitive electrode elements 165 laminated in the lamination direction.
  • vias extending in the Z-axis direction are provided near the center of the ends in the negative direction of the Y-axis of the resonance electrode elements 141-145 in the uppermost and lowermost layers of the resonators R1-R5.
  • V1 and V2 are formed respectively.
  • Vias V3 and V4 extending in the Z-axis direction are formed near the center of the ends in the positive direction of the Y-axis of the capacitive electrode elements 161-165 in the uppermost and lowermost layers of the capacitive sections C1-C5, respectively. be. Note that the via V4 is not shown in FIG. 3 because it is hidden. Vias V1 to V4 will be described in detail later.
  • the number of resonant electrode elements 141 of the resonant section R1 is "5", which is the same as the number of the capacitor electrode elements 161 of the capacitor section C1, and the five resonant electrode elements 141 are the same as the five capacitor electrode elements 161, respectively. Examples are shown formed in layers. However, the number of capacitive electrode elements 161 does not have to be the same as the number of resonant electrode elements 141 . The same applies to other capacitive sections C2-C5 and capacitive electrode elements 162-165.
  • capacitive electrodes protruding in the X-axis direction toward adjacent resonance portions are separately formed near the ends of the resonance portions R1 to R5 in the negative direction of the Y axis. good too. Adjusting the degree of capacitive coupling between the resonance parts by adjusting the length in the Y-axis direction of the capacitor electrodes projecting in the X-axis direction, the distance between adjacent distributed constants, and/or the number of electrodes constituting the capacitor electrodes. can be done.
  • FIG. 4 is an example of a cross-sectional view when the filter device 100 is cut along a plane along the YZ plane. Note that FIG. 4 representatively illustrates a cross-sectional view of the resonance portion R1 and the capacitance portion C1.
  • the cross-sectional shapes of the other resonating portions R2 to R5 and the capacitive portions C2 to C5 are also the same as the cross-sectional shape of the resonating portion R1 and the capacitive portion C1.
  • the ends of the plurality of resonance electrode elements 141 forming the resonance section R1 in the negative direction of the Y-axis and the Y-direction ends of the plurality of capacitive electrode elements 161 forming the capacitive section C1 are arranged to face each other across a gap GP in the Y-axis direction.
  • the resonance portion R1 and the capacitance portion C1 are configured to form a capacitance corresponding to the gap GP at the ends facing each other across the gap GP in the Y-axis direction.
  • the filter device 100 ceramic is adopted as the material of the laminate 110.
  • the material of the laminate 110 is ceramic
  • the reason why the capacitive electrode element 161 inclined with respect to the Y-axis direction exists in the capacitive part C1 arranged in the outer peripheral portion of the laminated body 110 in the Y-axis direction is due to this distortion. be.
  • V1 , V2 are respectively formed.
  • Vias V3 and V4 are formed at the ends in the positive direction of the Y-axis of the capacitive electrode element 161 in the uppermost layer and the lowermost layer of the capacitive section C1, respectively.
  • Each via V1 to V4 is formed to extend in the Z-axis direction (stacking direction).
  • the height (dimension in the Z-axis direction) of each via V1 to V4 is longer than the thickness (dimension in the Z-axis direction) of each resonance electrode element 141 and the thickness (dimension in the Z-axis direction) of each capacitive electrode element 161. is formed as
  • each of the vias V1 to V4 is arranged in a direction (gap It extends in the direction in which the length of the GP is less likely to vary).
  • the vias V1 and V2 arranged at the ends in the negative direction of the Y-axis of the resonance electrode elements 141 in the uppermost layer and the lowermost layer of the resonance section R1 are arranged from the ends where the vias V1 and V2 are arranged. , along the Z-axis direction to the side away from the center of the stack 110 in the Z-axis direction. That is, the upper end of the via V1 is located above the top surface of the resonance electrode element 141 on the top layer, and the bottom end of the via V2 is located below the bottom surface of the resonance electrode element 141 on the bottom layer.
  • the vias V3 and V4 arranged at the ends of the capacitive electrode elements 161 in the uppermost layer and the lowermost layer of the capacitive section C1 in the positive direction of the Y-axis extend from the ends where V3 and V4 are arranged in the Z-axis direction. , toward the center of the stack 110 in the Z-axis direction. That is, the bottom end of the via V3 is located below the bottom surface of the resonance electrode element 141 in the top layer, and the top end of the via V4 is located above the top surface of the resonance electrode element 141 in the bottom layer.
  • the vias need only be formed at least one end of the plurality of resonant electrode elements 141 and at least one end of the plurality of capacitive electrode elements 161, and are not necessarily positioned as shown in FIG. It does not have to be formed in
  • the via V1 may be formed to connect the resonant electrode element 141 on the uppermost layer and the resonant electrode element 141 adjacent to the uppermost layer.
  • Filter device 100 is manufactured by performing the following first to eleventh steps in this order.
  • Second step Preparation of ceramic green sheets
  • ceramic powder, binder, and plasticizer are mixed in arbitrary amounts to prepare a slurry (LTCC material), and the slurry is coated on a carrier film to form a ceramic green sheet.
  • a slurry LTCC material
  • the slurry is coated on a carrier film to form a ceramic green sheet.
  • Make a green sheet Ceramic green sheets of large size corresponding to a plurality of filter devices 100 are prepared.
  • a lip coater or doctor blade can be used to apply the slurry.
  • a ceramic green sheet can be formed with an arbitrary thickness (for example, 5 to 100 ⁇ m).
  • the ceramic green sheets are processed to form via holes for vertical conduction.
  • a punching machine, a carbon dioxide gas (CO 2 ) laser, an ultraviolet (UV) laser, or the like can be used to form the via holes.
  • the hole diameter of the via can be any diameter (eg, 20-200 ⁇ m).
  • the via holes are filled with a conductive paste containing a conductive powder, a plasticizer, and a binder.
  • a common base (ceramic powder) for adjusting the shrinkage rate may be added to the conductive paste.
  • the vias V1 to V4 described above are formed in the second and third steps.
  • Electrode Pattern Printing In this step, an electrode pattern is formed by printing a conductive paste for forming circuits such as a resonant electrode element and a capacitive electrode element on a ceramic green sheet. Through this process, a plurality of green sheets with vias and electrode patterns on each layer are produced.
  • a conductive paste for circuit formation contains a conductive powder, a plasticizer, and a binder.
  • a technique such as screen printing, inkjet, or gravure printing can be used for printing the electrode pattern.
  • the press-bonded ceramic blocks are cut to form singulated chips (laminated body for one filter device 100).
  • the chip outer end portions of the resonant electrode element and the capacitive electrode element are exposed to the cut surface.
  • a dicer, a laser, or the like can be used for cutting. If necessary, barreling (polishing) may be performed after cutting.
  • Non-step Firing of singulated chips
  • the singulated chips are arranged in a firing sheath, placed in a firing furnace, and fired.
  • a batch furnace or a belt furnace can be used as the firing furnace.
  • Plating treatment of fired chip In this step, the fired chip is plated.
  • Ni--Sn plating, Ni--electroless Au plating, or the like can be selected.
  • the printing may blur or the printing may be blurred. If print bleeding occurs at the ends of the resonant electrode element and the capacitive electrode element, each end may extend in the Y-axis direction, making the length of the gap GP in the Y-axis direction smaller than the target value. There is in addition, when printing is blurred at the ends of the resonant electrode element and the capacitive electrode element, the length of the gap GP in the Y-axis direction may become larger than the target value.
  • the vias V1 and V2 are provided at the ends in the negative direction of the Y axis of the resonance electrode elements 141 in the uppermost layer and the lowermost layer of the resonance section R1, respectively. It is formed.
  • Vias V3 and V4 are formed at the ends of the capacitive electrode elements 161 in the uppermost layer and the lowermost layer of the capacitive section C1 in the positive direction of the Y axis, respectively.
  • “Side surface 115", “side surface 116" and “laminate 110" in the present embodiment can respectively correspond to “first side surface”, “second side surface” and “laminate” in the present disclosure.
  • “Shield terminal 121” and “shield terminal 122” in the present embodiment may respectively correspond to “first terminal” and “second terminal” in the present disclosure.
  • the “resonators R1 to R5” in the present embodiment can correspond to the “resonator” in the present disclosure.
  • Each of the “resonant electrode elements 141 to 145” in the present embodiment can correspond to “a plurality of resonant electrode elements” in the present disclosure.
  • “Capacitance units C1 to C5" in the present embodiment may correspond to “capacitance units” in the present disclosure.
  • Each of the “capacitance electrode elements 161 to 165” in the present embodiment can respectively correspond to “a plurality of capacitive electrode elements” in the present disclosure.
  • At least one of “vias V1 to V4" in the present embodiment may correspond to "conductive member” and “via” in the present disclosure.
  • FIG. 4 described above shows an example in which the side surfaces of the vias V1 to V4 are not tapered (inclined) and the cross sections of the vias V1 to V4 are rectangular.
  • the hole diameters (dimensions in the Y-axis direction) of the vias V1 to V4 are substantially constant.
  • the side surfaces of the vias V1 to V4 are tapered (inclined), and the cross sections of the vias V1 to V4 may be trapezoidal.
  • the tapers be as small as possible, and that the hole diameter difference between the top and bottom of the vias V1 to V4 is less than 20 ⁇ m. Furthermore, it is desirable that the taper directions of the vias V1 to V4 are aligned.
  • FIG. 5 is an example of a cross-sectional view when the filter device 100A according to Modification 1 is cut along a plane along the YZ plane.
  • the filter device 100A is obtained by changing the vias V1 to V4 of the filter device 100 described above to vias V1A to V4A.
  • Each of the vias V1A to V4A has a tapered side surface, and the cross-sectional shape of each of the vias V1A to V4A shown in FIG. 5 is trapezoidal.
  • the taper directions of the vias V1A to V4A are all aligned. Specifically, in the cross-sectional shape (trapezoidal shape) of each of the vias V1A to V4A shown in FIG. Aligned.
  • the bottom side of the via V1A is located above the top surface of the resonance electrode element 141 in the uppermost layer, and the top side of the via V2A is located below the bottom surface of the resonance electrode element 141 in the bottom layer.
  • the bottom side of the via V3A is located below the bottom surface of the capacitive electrode element 161 of the top layer, and the bottom side of the via V4A is located above the top surface of the resonance electrode element 141 of the bottom layer.
  • each of the vias V1A to V4A has a taper
  • the directions of the tapers even if nonlinear distortion in the stacking direction occurs in the outer peripheral portion of the stack 110 in the Y-axis direction, the Y Variation in the length of gap GP in the axial direction can be mitigated.
  • variations in the capacitance formed between the resonance section R1 and the capacitance section C1 can be made less likely to occur, and the characteristics of the filter device 100A can be stabilized.
  • FIG. 6 is an example of a cross-sectional view of the filter device 100B according to Modification 2 taken along the YZ plane.
  • the filter device 100B is obtained by changing the layered body 110 of the filter device 100 described above to a layered body 110B.
  • the laminated body 110 according to the above-described embodiment is made of one type of ceramic material
  • the laminated body 110B according to Modification 1 includes the first portion 110a and the first portion 110a made of different kinds of ceramic materials having different dielectric constants. and a second portion 110b.
  • Other configurations of the filter device 100B are the same as those of the filter device 100 described above.
  • the laminate 110B includes a first portion 110a made of a first ceramic material and a second portion 110b made of a second ceramic material different from the first ceramic material.
  • the first portion 110a is arranged in the central layer of the laminate 110B.
  • the second portion 110b is arranged above and below the first portion 110a.
  • the second ceramic material which is the material of the second portion 110b, has a characteristic that it shrinks more due to heat treatment than the first ceramic material, which is the material of the first portion 110a.
  • the "first part 110a” and “second part 110b” in Modification 2 may respectively correspond to the “first part” and “second part” in the present disclosure.
  • FIG. 7 shows a plurality of vias V1B formed at the ends of the resonance electrode element 141 on the uppermost layer in the negative direction of the Y axis and the Y FIG. 10 is a top view of a plurality of vias V3B formed at the end of the axis in the positive direction;
  • the vias V2 and V4 formed in the lowermost layer may also be formed to be elongated holes, like the vias V1B and V3B formed in the uppermost layer.
  • a plurality of vias V1B arranged and connected in the X-axis direction may be formed at the end of the resonance electrode element 141 to form an elongated hole.
  • a plurality of vias V3B arranged and connected in the X-axis direction may be formed at the end of the capacitive electrode element 161 to form an elongated hole.
  • FIG. 8 is an example of a cross-sectional view when the filter device 100D according to Modification 4 is cut along a plane along the YZ plane.
  • the filter device 100D is obtained by changing the via V3 of the filter device 100 described above to a via V3C.
  • FIG. 9 shows, in the filter device 100D according to Modification 4, a via V1 formed at the end of the resonance electrode element 141 in the uppermost layer in the negative direction of the Y axis and a via V1 formed in the capacitive electrode element 161 in the uppermost layer. It is the figure which looked via V3C from the upper part.
  • the via V3C formed in the capacitive electrode element 161 of the uppermost layer extends from the end in the positive direction of the Y axis to the shield terminal 122.
  • a plurality of them are lined up and connected in the Y-axis direction, and are in contact with the shield terminal 122 .
  • a via similar to the via V3C may be formed in the resonance electrode element 141 in the lowest layer or the intermediate layer.
  • the element including the via is a resonant electrode element.
  • part of the via V1 protrudes in the negative direction of the Y axis from the negative end of the resonance electrode element 141 in which the via V1 is not formed.
  • the negative Y-axis end of the resonant electrode element 141 corresponds to the negative Y-axis end of the via V1. Therefore, the distance from the connection conductor 151 to the negative Y-axis end of the via V1 is set to ⁇ /4.
  • FIG. 9 The example shown in FIG.
  • FIG. 10 is an example of a cross-sectional view when the filter device 100E according to Modification 5 is cut along a plane along the YZ plane.
  • the filter device 100E is obtained by changing the vias V1 and V2 of the filter device 100 described above to through holes H1 and omitting the connection conductors 171 and the vias V3 and V4 of the filter device 100 described above.
  • the through-holes H1 are connected to the ends of the plurality of resonance electrode elements 141 in the negative direction of the Y-axis and formed to extend in the stacking direction and penetrate the stack 110 . Therefore, even if the distortion in the lamination direction is large, the variation in the capacitance formed between the resonance portion R1 and the capacitance portion C1 is suppressed by suppressing the change in the length of the gap GP in the Y-axis direction. can be made less likely to occur.
  • FIG. 11 is a top view of the through hole H1 formed at the end of the resonance electrode element 141 in the negative direction of the Y axis in the filter device 100E according to Modification 5.
  • FIG. 11 is a top view of the through hole H1 formed at the end of the resonance electrode element 141 in the negative direction of the Y axis in the filter device 100E according to Modification 5.
  • FIG. 11 shows an example in which the hole diameter of the through hole H1 is approximately the same size as the width (dimension in the X-axis direction) of the resonance electrode element 141 in the negative direction of the Y-axis.
  • Threeough hole H1 in Modification 5 may correspond to "conductive member" and "through hole” in the present disclosure.
  • the "conductive member" in the present disclosure may be formed by printing instead of vias. That is, a conductive member having a dimension in the Z-axis direction longer than the thickness of each electrode element may be printed on the opposite ends of the resonant electrode element and the capacitive electrode element.
  • 10 communication device 12 antenna, 20 high-frequency front-end circuit, 22, 28 band-pass filter, 24 amplifier, 26 attenuator, 30 mixer, 32 local oscillator, 40 D/A converter, 50 RF circuit, 100, 100A, 100B, 100C, 100D, 100E filter device, 110, 110B laminate, 110a first part, 110b second part, 111 upper surface, 112 lower surface, 113, 114, 115, 116 side surface, 121, 122 shield terminal, 130, 135, PL1 Plate electrodes, 141 to 145 resonance electrode elements, 151 to 155, 171 to 175 connection conductors, 161 to 165 capacitive electrode elements, C1 to C5 capacitance section, GP gap, R1 to R5 resonance section, T1 input terminal, T2 output terminal, H1 through holes, V1 to V4, V1A to V4A, V1B, V3B, V3C, V10, V11 vias.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

L'invention concerne un dispositif de filtre (100) comprenant un stratifié (110), des bornes de blindage (121, 122), une unité de résonateur (R1), et une unité de condensateur (C1) faisant face à l'unité de résonateur (R1) dans une direction Y. L'unité de résonateur (R1) est formée par une pluralité d'éléments d'électrode résonants (141-145). L'unité de condensateur (C1) est formée par une pluralité d'éléments d'électrode capacitifs (161-165). Des trous d'interconnexion (V1-V4) sont respectivement disposés au niveau de sections d'extrémité de la couche supérieure et de la couche la plus basse parmi la pluralité d'éléments d'électrode résonants (141-145), et au niveau de sections d'extrémité de la couche supérieure et de la couche la plus basse parmi la pluralité d'éléments d'électrode capacitifs (161-165). La longueur des trous d'interconnexion (V1-V5) dans la direction de stratification est supérieure à l'épaisseur de chacun des éléments d'électrode résonants et des éléments d'électrode capacitifs.
PCT/JP2022/038990 2021-11-17 2022-10-19 Résonateur diélectrique et filtre diélectrique WO2023090039A1 (fr)

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JP2021-187084 2021-11-17

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288706A (ja) * 1995-04-12 1996-11-01 Soshin Denki Kk 積層型誘電体フィルタ
JP2000323901A (ja) * 1999-05-07 2000-11-24 Murata Mfg Co Ltd 積層型ｌｃフィルタ
JP2004088752A (ja) * 2002-07-05 2004-03-18 Matsushita Electric Ind Co Ltd 結合器
JP2007089000A (ja) * 2005-09-26 2007-04-05 Alps Electric Co Ltd ストリップラインフィルタ
JP2020510326A (ja) * 2018-10-22 2020-04-02 深▲せん▼振華富電子有限公司 積層チップバンドパスフィルタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08288706A (ja) * 1995-04-12 1996-11-01 Soshin Denki Kk 積層型誘電体フィルタ
JP2000323901A (ja) * 1999-05-07 2000-11-24 Murata Mfg Co Ltd 積層型ｌｃフィルタ
JP2004088752A (ja) * 2002-07-05 2004-03-18 Matsushita Electric Ind Co Ltd 結合器
JP2007089000A (ja) * 2005-09-26 2007-04-05 Alps Electric Co Ltd ストリップラインフィルタ
JP2020510326A (ja) * 2018-10-22 2020-04-02 深▲せん▼振華富電子有限公司 積層チップバンドパスフィルタ

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