WO2023086753A1 - Planarisation chimico-mécanique à plateau unique de type tampon-en-bouteille pour applications d'extrémité arrière - Google Patents

Planarisation chimico-mécanique à plateau unique de type tampon-en-bouteille pour applications d'extrémité arrière Download PDF

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WO2023086753A1
WO2023086753A1 PCT/US2022/079271 US2022079271W WO2023086753A1 WO 2023086753 A1 WO2023086753 A1 WO 2023086753A1 US 2022079271 W US2022079271 W US 2022079271W WO 2023086753 A1 WO2023086753 A1 WO 2023086753A1
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cmp
polishing
pib
barrier
composition
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PCT/US2022/079271
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English (en)
Inventor
Xiaobo Shi
John G. Langan
Mark Leonard O'neill
Robert Vacassy
James A. Schlueter
Ara Philipossian
Yasa Sampurno
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Versum Materials Us, Llc
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Publication of WO2023086753A1 publication Critical patent/WO2023086753A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • This disclosure relates to a single platen CMP process having multiple polishing steps such as Back-End applications.
  • the single platen CMP process uses a novel Pad-ln-A-Bottle (PIB) technology and PIB type advanced metal (such as Cu or Co) bulk, PIB type metal (such as Cu or Co) soft landing, and PIB type metal (such as Cu or Co) barrier Chemical Mechanical Planarization (CMP) slurries, systems and methods with the single platen for three polishing steps in Back-End applications .
  • PIB Pad-ln-A-Bottle
  • CMP Chemical Mechanical Planarization
  • metal bulk, metal soft landing, and metal Barrier CMP slurries are used three different polishing steps on three different platens on the CMP polishing tool for the whole polishing process as shown in the upper part of Figure 1.
  • three different platens are employed with at least two different types of polishing pads for three CMP slurries.
  • PU micron-size polyurethane
  • a selected first PIB type Cu bulk CMP slurry is used first to remove the desirable thickness of the overburden of the Cu capping layer film, after the step 1 , a selected second PIB type Cu soft landing CMP slurry will be used in step 2 to remove the left Cu capping layer to stop on barrier and dielectric films to afford low Cu line dishing, in step 3, a selected third PIB type Cu Barrier is used to remove barrier, dielectric and Cu films with desirable polishing selectivity among different films to be polished to achieve Cu dishing and erosion corrections to obtain further lower Cu dishing and erosion which enhance the electronic device fabrication yield.
  • the single platen CMP process therein the single platen is used with a single selected polishing pad for all three different PIB type CMP slurries: PIB type Cu bulk, PIB type Cu soft landing and PIB type Cu Barrier CMP slurries used in the back-end CMP processes.
  • the invented single platen CMP process for back-end CMP applications will reduce the CMP processing times and increase throughput of semiconductor device fabrications.
  • a PIB type Cu bulk CMP polishing composition in the first step of polishing in a single platen CMP process.
  • the PIB type Cu bulk CMP polishing composition comprises: abrasives, micron-size polyurethane (PU) beads having a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm; silicone-containing dispersing agent; liquid carrier such as water; and optionally, a chelating agent or dual chelating agents or tris chelating agents, corrosion inhibitor, organic quaternary ammonium salt, a biocide; pH adjuster; an oxidizer added at the point of use; and the pH of the composition is from 3.0 to 12.0; 5.5 to 7.5; or 6.0 to 7.5.
  • PU micron-size polyurethane
  • a PIB type Cu soft landing CMP polishing composition is provided in the second step of the polishing in a single platen CMP process.
  • the PIB type Cu soft landing CMP polishing composition comprises: abrasives, micron-size polyurethane (PU) beads having a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm; silicone-containing dispersing agent;
  • Cu dishing reducing additive such as water; and optionally, a chelating agent or dual chelating agents or tris chelating agents, corrosion inhibitor, organic quaternary ammonium salt, a biocide; pH adjuster; an oxidizer added at the point of use; and the pH of the composition is from 3.0 to 12.0; 5.5 to 7.5; or 6.0 to 7.5.
  • a PIB type Cu barrier CMP polishing composition is provided in the third step of polishing in a single platen CMP process.
  • the PIB type Cu barrier CMP polishing composition comprises: abrasives, micron-size polyurethane (PU) beads having a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm; silicone-containing dispersing agent; a barrier or dielectric film removal rate boosting additive; liquid carrier such as water; and optionally,
  • Cu dishing reducing additive corrosion inhibitor, pH adjuster; an oxidizer added at the point of use; and the pH of the composition can be acidic or alkaline.
  • pH is from 2.0 to 6.5
  • alkaline pH PIB type CMP polishing composition pH range is from 8 to 11 .
  • a single platen CMP polishing method comprises the steps of: providing the single platen having a single cost effective polishing pad; providing the semiconductor patterned wafer having at least one film consisting of copper, barrier, THROUGH-SILICON VIA (TSV) copper Low-k, ultra Low-k and/or other dielectric films; providing the PIB type Cu bulk CMP polishing composition as stated above polishing the copper film to a controlled thickness, wherein at least a portion of the copper film is in contact with both the polishing pad and the PIB type Cu bulk CMP polishing composition; providing the PIB type Cu soft landing CMP polishing composition as stated above; polishing copper film left from the last polishing and stopping on barrier films, wherein at least a portion of the copper film left from the last polishing is in contact with both the polishing pad and the PIB type Cu soft landing CMP polishing composition; providing the PIB type Cu barrier CMP polishing composition as stated above; polishing
  • a single platen CMP polishing system comprises: providing the single platen having a single cost effective polishing pad; providing the semiconductor patterned wafer having at least copper, barrier, THROUGH- SILICON VIA (TSV) copper, Low-k, ultra Low-k and/or other dielectric films; providing the PIB type Cu bulk CMP polishing composition as stated above to polish the copper film to a controlled thickness, wherein at least a portion of the copper film is in contact with both the polishing pad and the PIB type Cu bulk CMP polishing composition; providing the PIB type Cu soft landing CMP polishing composition as stated above to polish copper film left from the last polishing and stop on barrier films, wherein at least a portion of the copper film left from the last polishing is in contact with both the polishing pad and the PIB type Cu soft landing CMP polishing composition; providing the PIB type Cu barrier CMP polishing composition as stated above to polish at least one film selected from the group consist
  • the abrasive particles include, but are not limited to, colloidal silica or high purity colloidal silica; the colloidal silica particles doped by other metal oxide within lattice of the colloidal silica, such as alumina doped silica particles; colloidal aluminum oxide including alpha-, beta-, and gamma-types of aluminum oxides; colloidal and photoactive titanium dioxide, cerium oxide, colloidal cerium oxide, nano-sized inorganic metal oxide particles, such as alumina, titania, zirconia, ceria etc.; nano-sized diamond particles, nanosized silicon nitride particles; mono-modal, bi-modal, multi-modal colloidal abrasive particles; organic polymer-based soft abrasives, surface-coated or modified abrasives, or other composite particles, and mixtures thereof.
  • the silicone-containing dispersing agent includes, but is not limited to, silicone polyethers containing both a water-insoluble silicone backbone and a number of water- soluble polyether pendant groups; such as the repeating units of ethylene oxide(EO) and propylene oxide (PO) (EO-PO) functional groups to provide surface wetting properties.
  • silicone polyethers containing both a water-insoluble silicone backbone and a number of water- soluble polyether pendant groups; such as the repeating units of ethylene oxide(EO) and propylene oxide (PO) (EO-PO) functional groups to provide surface wetting properties.
  • the corrosion inhibitors include but are not limited to family of hetero aromatic compounds containing nitrogen atom(s) in their aromatic rings, such as 1 ,2,4-triazole, amitrole (3-amino-1 ,2,4-triazole), benzotriazole and benzotriazole derivatives, tetrazole and tetrazole derivatives, imidazole and imidazole derivatives, benzimidazole and benzimidazole derivatives, pyrazole and pyrazole derivatives, and tetrazole and tetrazole derivatives.
  • family of hetero aromatic compounds containing nitrogen atom(s) in their aromatic rings such as 1 ,2,4-triazole, amitrole (3-amino-1 ,2,4-triazole), benzotriazole and benzotriazole derivatives, tetrazole and tetrazole derivatives, imidazole and imidazole derivatives, benzimidazole and benzimidazole derivatives,
  • the chelating agents include, but are not limited to, amino acids, amino acid derivatives, organic amines.
  • amino acids and amino acid derivatives include, but not limited to, glycine, D-alanine, L-alanine, DL-alanine, beta-alanine, valine, leucine, isoleucine, phenylamine, proline, serine, threonine, tyrosine, glutamine, asparagine, glutamic acid, aspartic acid, tryptophan, histidine, arginine, lysine, methionine, cysteine, iminodiacetic acid, and combinations thereof.
  • the organic amines include, but not limited to, 2,2-dimethyl-1 ,3- propanediamine and 2,2-dimethyl-1 ,4-butanediamine, ethylenediamine, 1 ,3- diaminepropane, 1 ,4-diaminebutane, etc.
  • organic diamine compounds with two primary amine moieties can be described as the binary chelating agents.
  • the biocide includes but is not limited to KathonTM, KathonTM CG/ICP II, from Dow Chemical Co. They have active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one and 2-methyl-4-isothiazolin-3-one.
  • the Cu dishing reducing agent includes but is not limited to non-ionic organic surfactants, such as acetylene ethoxylate type of surfactants Dynol607TM, Dynol604TM or Polyglycol ether structured TergitolTM type of non-ionic surfactants, such as TergitolTM Min Form 1x, Tergitol TM L-62, Tergitol TM L-64, or anionic surfactants, such as organic alkyl sulfonate, organic alkyl phosphate or organic carboxylate.
  • anionic surfactants are dodecyl sulfonate ammonium or potassium salt, octyl phosphate ammonium or potassium salt, and octyl carboxylate ammonium or potassium salt.
  • the barrier or dielectric film removal rate boosting additives include, but not limited to, the various salts of silicate, such as ammonium silicate, sodium silicate, potassium silicate or tetraalkyl silicate.
  • the oxidizing agent includes, but is not limited to, periodic acid, hydrogen peroxide, potassium iodate, potassium permanganate, ammonium persulfate, ammonium molybdate, ferric nitrate, nitric acid, potassium nitrate, and mixtures thereof.
  • the organic quaternary ammonium salt as Cu removal rate boosting agent and defect reducing agent includes, but is not limited to, choline salts with different counter ions, such as choline bicarbonate, choline hydroxide, choline dihydrogen citrate salt, choline ethanolamine, choline bitartrate, etc.
  • the pH adjusting agents include, but are not limited to, the following: nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof. pH adjusting agents also include the basic pH adjusting agents, such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic amines, and other chemical reagents that are able to be used to adjust pH towards the more alkaline direction.
  • the basic pH adjusting agents such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic amines, and other chemical reagents that are able to be used to adjust pH towards the more alkaline direction.
  • Figure 1 A conventional three platens CMP process is compared to a single platen CMP process of the instant disclosure.
  • the current disclosure teaches a single platen CMP polishing with a single same polishing pad using PIB type metal bulk, PIB type metal soft landing, and PIB type metal Barrier CMP slurries for back-end CMP applications, such as three step Cu CMP processes.
  • the current application discloses a new technology where the role of pad asperities is played by high-quality micron-size polyurethane (PU) beads.
  • PU micron-size polyurethane
  • the beads are suspended in a Cu CMP polishing composition having abrasive particles, such as a calcined ceria, colloidal silica, or composite particles with the assistance of a wetting agent (or a surfactant) as the dispersing agent to disperse polyurethane beads in aqueous compositions.
  • abrasive particles such as a calcined ceria, colloidal silica, or composite particles with the assistance of a wetting agent (or a surfactant) as the dispersing agent to disperse polyurethane beads in aqueous compositions.
  • the beads come into contact with the wafer surface by a means described below to promote polishing in much the same way as conventional asperities.
  • a polisher typically use three platens with two to three pads and using three different CMP polishing compositions for back-end CMP applications.
  • a single platen process using the same polishing pad and three different CMP slurries will be used to replace three platen CMP processes for back-end CMP applications.
  • the single platen process provides significant cost reductions in semiconductor device fabrication processes and increase the throughout in semiconductor device fabrication efficiency.
  • Polyurethane beads used in the disclosed 3 different types of CMP polishing compositions for single platen back-end CMP applications have a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm.
  • a PIB type Cu bulk CMP polishing composition in the first step of polishing in a single platen CMP process.
  • the PIB type Cu bulk CMP polishing composition comprises: abrasives, micron-size polyurethane (PU) beads having a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm; silicone-containing dispersing agent; liquid carrier such as water; and optionally, a chelating agent or dual chelating agents or tris chelating agents, corrosion inhibitor, organic quaternary ammonium salt, a biocide; pH adjuster; an oxidizer added at the point of use; and the pH of the composition is from 3.0 to 12.0; 5.5 to 7.5; or 6.0 to 7.5.
  • PU micron-size polyurethane
  • a PIB type Cu soft landing CMP polishing composition is provided in the second step of the polishing in a single platen CMP process.
  • the PIB type Cu soft landing CMP polishing composition comprises: abrasives, micron-size polyurethane (PU) beads having a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm; silicone-containing dispersing agent;
  • Cu dishing reducing additive such as water; and optionally, a chelating agent or dual chelating agents or tris chelating agents, corrosion inhibitor, organic quaternary ammonium salt, a biocide; pH adjuster; an oxidizer added at the point of use; and the pH of the composition is from 3.0 to 12.0; 5.5 to 7.5; or 6.0 to 7.5.
  • a PIB type Cu barrier CMP polishing composition is provided in the third step of polishing in a single platen CMP process.
  • the PIB type Cu barrier CMP polishing composition comprises: abrasives, micron-size polyurethane (PU) beads having a size ranging from 2 to 100 pm, 10 to 80 pm, 20 to 70 pm, or 30 to 50 pm; silicone-containing dispersing agent; a barrier or dielectric film removal rate boosting additive; liquid carrier such as water; and optionally,
  • Cu dishing reducing additive corrosion inhibitor, pH adjuster; an oxidizer added at the point of use; and the pH of the composition can be acidic or alkaline.
  • pH is from 2.0 to 6.5
  • alkaline pH PIB type CMP polishing composition pH range is from 8 to 11 .
  • a single platen CMP polishing method comprises the steps of: providing the single platen having a single cost effective polishing pad; providing the semiconductor patterned wafer having at least one file selected from the group consisting of copper, barrier, THROUGH-SILICON VIA (TSV) copper Low-k, ultra Low-k and/or other dielectric films; providing the PIB type Cu bulk CMP polishing composition as stated above polishing the copper film to a controlled thickness, wherein at least a portion of the copper film is in contact with both the polishing pad and the PIB type Cu bulk CMP polishing composition; providing the PIB type Cu soft landing CMP polishing composition as stated above; polishing copper film left from the last polishing and stopping on barrier films, wherein at least a portion of the copper film left from the last polishing is in contact with both the polishing pad and the PIB type Cu soft landing CMP polishing composition; providing the PIB type Cu barrier CMP polishing composition as stated
  • a single platen CMP polishing system comprises: providing the single platen having a single cost effective polishing pad; providing the semiconductor patterned wafer having at least copper, barrier, THROUGH- SILICON VIA (TSV) copper, Low-k, ultra Low-k and/or other dielectric films; providing the PIB type Cu bulk CMP polishing composition as stated above to polish the copper film to a controlled thickness, wherein at least a portion of the copper film is in contact with both the polishing pad and the PIB type Cu bulk CMP polishing composition; providing the PIB type Cu soft landing CMP polishing composition as stated above to polish copper film left from the last polishing and stop on barrier films, wherein at least a portion of the copper film left from the last polishing is in contact with both the polishing pad and the PIB type Cu soft landing CMP polishing composition; providing the PIB type Cu barrier CMP polishing composition as stated above to polish at least one film selected from the group
  • the abrasive particles are nano-sized particles, include, but are not limited to, colloidal silica or high purity colloidal silica; the colloidal silica particles doped by other metal oxide within lattice of the colloidal silica, such as alumina doped silica particles; colloidal aluminum oxide including alpha-, beta-, and gamma-types of aluminum oxides; colloidal and photoactive titanium dioxide, cerium oxide, colloidal cerium oxide, nano-sized inorganic metal oxide particles, such as alumina, titania, zirconia, ceria etc.; nano-sized diamond particles, nano-sized silicon nitride particles; mono-modal, bi-modal, multi-modal colloidal abrasive particles; organic polymer-based soft abrasives, surface-coated or modified abrasives, or other composite particles, and mixtures thereof.
  • the colloidal silica can be made from silicate salts, the high purity colloidal silica can be made from TEOS or TMOS.
  • the colloidal silica or high purity colloidal silica can have narrow or broad particle size distributions with mono-model or multi-models, various sizes and various shapes including spherical shape, cocoon shape, aggregate shape and other shapes.
  • the nano-sized particles also can have different shapes, such as spherical, cocoon, aggregate, and others.
  • the particle size of the abrasives used in the Cu CMP slurries is ranged from 5nm to 500nm, 10nm to 250nm, or 25nm to 100nm.
  • the Cu CMP polishing compositions comprise 0.0025 wt.% to 25 wt.% abrasives; 0.0025 wt.% to 2.5 wt.%; 0.005 wt.% to 0.5 wt.%.
  • the CMP polishing compositions comprise silicone-containing dispersing agent to disperse the polyurethane beads in aqueous solutions.
  • the silicone-containing dispersing agent also functions as a surface wetting agent dispersing agent.
  • the silicone-containing dispersing agent includes, but is not limited to, silicone polyethers containing both a water-insoluble silicone backbone and a number of water- soluble polyether pendant groups; such as the repeating units of EO-PO functional groups to provide surface wetting properties.
  • silicone-containing dispersing agent includes Silsurf® E608, Silsurf®J208-6, Silsurf®A208, Silsurf®CR1115, Silsurf®A204, Silsurf® A004-UP, Silsurf® A008-UP, Silsurf® B608, Silsurf®C208, Silsurf® C410, Silsurf® D208, Silsurf® D208, Silsurf® D208-30, Silsurf® Di-1010, Silsurf® Di-1510, Silsurf®Di-15-I, Silsurf®Di-2012, Silsurf® Di-5018-F, Silsurf® G8-I, Silsurf®J 1015-O, Silsurf®J1015-O-AC, Silsurf®J208, Silsurf® J208-6, Siltech® OP-8, Siltech® OP-11 , Siltech® OP-12, Siltech® OP-15, Siltech®OP-20; the products from Siltech Corporation; 225 Wicksteed Avenue,
  • the concentration range of the silicone-containing dispersing agent is from 0.01 wt.% to 2.0 wt.%, 0.025 wt.% to 1 .0 wt.%, or 0.05 wt.% to 0.5 wt.%.
  • the CMP slurry contains various sized polyurethane beads.
  • the concentration range of the polyurethane beads is from 0.01 wt.% to 2.0 wt.%, 0.025 wt.% to 1 .0 wt.%, or 0.05 wt.% to 0.5 wt.%.
  • the organic quaternary ammonium salt as Cu removal rate boosting agent and defect reducing agent includes but is not limited to choline salt, such as choline bicarbonate salt, or all other salts formed between choline and other anionic counter ions.
  • the CMP slurry contains 0.005 wt.% to 0.5 wt.%, 0.001 wt.% to 0.25 wt.%; or 0.002 wt.% to 0.1 wt.% of quaternary ammonium salt.
  • the CMP slurry contains 0.1 wt.% to 18 wt.%; 0.5 wt.% to 15 wt.%; or 1 .0 wt.% to 10.0 wt.% of at least one chelator, dual chelators or tris chelators.
  • the chelating agents include, but are not limited to, amino acids, amino acid derivatives, organic amines.
  • amino acids and amino acid derivatives include, but not limited to, glycine, D-alanine, L-alanine, DL-alanine, beta-alanine, valine, leucine, isoleucine, phenylamine, proline, serine, threonine, tyrosine, glutamine, asparagine, glutamic acid, aspartic acid, tryptophan, histidine, arginine, lysine, methionine, cysteine, iminodiacetic acid, and combinations thereof.
  • the organic amines include, but not limited to, 2,2-dimethyl-1 ,3- propanediamine and 2,2-dimethyl-1 ,4-butanediamine, ethylenediamine, 1 ,3- diaminepropane, 1 ,4-diaminebutane etc.
  • organic diamine compounds with two primary amine moieties can be described as the binary chelating agents.
  • the corrosion inhibitors can be any known reported corrosion inhibitors.
  • the corrosion inhibitors for example, include but are not limited to family of hetero aromatic compounds containing nitrogen atom(s) in their aromatic rings, such as 1 ,2,4-triazole, amitrole (3-amino-1 ,2,4-triazole), benzotriazole and benzotriazole derivatives, tetrazole and tetrazole derivatives, imidazole and imidazole derivatives, benzimidazole and benzimidazole derivatives, pyrazole and pyrazole derivatives, and tetrazole and tetrazole derivatives.
  • family of hetero aromatic compounds containing nitrogen atom(s) in their aromatic rings such as 1 ,2,4-triazole, amitrole (3-amino-1 ,2,4-triazole), benzotriazole and benzotriazole derivatives, tetrazole and tetrazole derivatives, imidazole and imidazole derivatives, benzimidazole and benzimidazole
  • the CMP slurry contains 0.005 wt.% to 1.0 wt.%; 0.01 wt.% to 0.5 wt.%; or 0.025 wt.% to 0.25 wt.% of corrosion inhibitor.
  • a biocide having active ingredients for providing more stable shelf time of the Cu chemical mechanical polishing compositions can be used.
  • the biocide includes but is not limited to KathonTM, KathonTM CG/ICP II, from Dow Chemical Co. They have active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one and/or 2-methyl-4-isothiazolin-3-one.
  • the CMP slurry contains 0.0001 wt.% to 0.05 wt.%; 0.0001 wt.% to 0.025 wt.%; or 0.0001 wt.% to 0.01 wt.% of biocide.
  • Acidic or basic compounds or pH adjusting agents can be used to allow pH of CMP polishing compositions being adjusted to the optimized pH value
  • the pH adjusting agents include, but are not limited to, the following: nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof. pH adjusting agents also include the basic pH adjusting agents, such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic amines, and other chemical reagents that are able to be used to adjust pH towards the more alkaline direction.
  • the basic pH adjusting agents such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic amines, and other chemical reagents that are able to be used to adjust pH towards the more alkaline direction.
  • the CMP slurry contains 0 wt.% to 1 wt.%; 0.01 wt.% to 0.5 wt.%; or 0.1 wt.% to 0.25 wt.% of pH adjusting agent.
  • the Cu dishing reducing agent includes but is not limited to non-ionic organic surfactants, such as acetylene ethoxylate type of surfactants Dynol607TM, Dynol604TM or Polyglycol ether structured TergitolTM type of non-ionic surfactants, such as TergitolTM Min Form 1x, Tergitol TM L-62, Tergitol TM L-64, or anionic surfactants, such as organic alkyl sulfonate, organic alkyl phosphate or organic carboxylate.
  • anionic surfactants are dodecyl sulfonate ammonium or potassium salt, octyl phosphate ammonium or potassium salt, and octyl carboxylate ammonium or potassium salt.
  • the concentrations of the Cu dishing reducing additives is ranged from 0.0005 wt.% to 0.25 wt.%, the preferred concentration rang is from 0.001 wt.% to 0.125 wt.%. The more preferred concentration range is from 0.025 wt.% to 0.10 wt.%.
  • the barrier or dielectric film removal rate boosting additives include, but not limited to, the various salts of silicate, such as ammonium silicate, sodium silicate, potassium silicate or tetraalkyl silicate.
  • the CMP slurry contains 0 wt.% to 2 wt.%; 0.1 wt.% to 1 .5 wt.%; or 0.25 wt.% to 1 wt.% of barrier or dielectric film removal rate boosting additives.
  • pH of the PIB type Cu bulk and Cu soft landing polishing compositions is from about 3.0 to about 12.0; preferred pH range is from 5.5 to 7.5; and the most preferred pH range is from 6.0 to 7.5.
  • pH of the PIB type Cu barrier CMP polishing composition can be acidic or alkaline.
  • pH is from 2.0 to 6.5; for alkaline pH PIB type CMP polishing composition, pH range is from 8 to 11 .
  • DF Down force: pressure applied during CMP, units psi min: minute(s) ml: milliliter(s) mV: millivolt(s) psi: pounds per square inch
  • PS platen rotational speed of polishing tool, in rpm (revolution(s) per minute)
  • TaN RR 0.5 psi Measured TaN removal rate at 0.5 psi down pressure of the CMP tool
  • CMP experiments were run using the procedures and experimental conditions given below.
  • the CMP tool that was used in the examples is a 300mm APD-800® polisher, manufactured by Fujikoshi Machinery Corporation (Nagano Japan). Pads were broken-in by polishing twenty-five dummy oxide (deposited by plasma enhanced CVD from a TEOS precursor, PETEOS) wafers. In order to qualify the tool settings and the pad break-in, two PETEOS monitors were polished with Syton® OX-K colloidal silica, supplied by Planarization Platform of Versum Materials, Inc. at baseline conditions. Polishing experiments were conducted using blanket Cu, TEOS, TaN, TiN, and BD wafers. These blanket wafers were purchased from Silicon Valley Microelectronics, 1150 Campbell Ave, CA, 95126.
  • Polishing pad Hard polishing pad, IC1010, was supplied by DuPont in USA. Soft Fujibo pad, supplied by Fujibo Corporation in Japan.
  • the hard polishing pad is made of a rigid, micro-porous polyurethane material.
  • the hard polishing pad may be IC 1010 with a compressibility of about 0.5%-4.0% and a hardness of about 52-62 (Shore D). Both hard and soft polishing pads were used respectively on the single platen for the Cu bulk, Cu soft landing and Barrier blanket wafer polishing studies.
  • PIB Cu bulk CMP polishing composition comprised of 5.20 wt.% glycine, 2.40 wt.% alanine, 0.016 wt.% Amitrole, 0.0231 wt.% choline bicarbonate, 0.0016 wt.% NeoIone M10 biocide, 0.2705 wt.% high purity colloidal silica particles as abrasive, 0.050 wt.% Silsurf E608 as dispersing agent and 0.10 wt.% 35micron sized polyurethane beads.
  • Silsurf E608 containing EO-PO wetting functional groups was used as the silicone-containing dispersing agent.
  • PIB Cu soft landing CMP polishing composition comprised of EMD Electronics Cu soft landing slurry, Cu3086, with added 0.050 wt.% Silsurf E608 as dispersing agent and 0.10 wt.% 35micron sized polyurethane beads.
  • PIB Barrier CMP polishing composition comprised of EMD Electronics, BAR6610R slurry, with added 0.050 wt.% Silsurf E608 as dispersing agent and 0.25 wt.% 35micron sized polyurethane beads.
  • polishing testing were conducted hard IC1010 pad on a single platen process with different applied down force and sliding velocities.
  • polishing results are listed in Table 1 to Table 3 which used hard IC1010 polishing pad on a single platen process.
  • Table 1 PIB-Type Cu Bulk CMP Slurry Polishing Results on IC1010 Pad
  • the highest Cu removal rate is achieved with Cu PIB bulk CMP slurry at 2.5psi down force and 1 .5m/s sliding velocity on the single platen process using hard IC1010 pad.
  • the PIB-type of Cu bulk slurry on a single platen process provides high Cu:TEOS polishing selectivity at >4500:1 and Cu:TaN polishing selectivity at >1200:1 at 2.0psi down force and 1 .5m/s sliding velocity.
  • the highest Cu removal rate is achieved with Cu PIB bulk CMP slurry at 1 .Opsi down force and 1 .0m/s sliding velocity on the single platen process.
  • the PIB-type of Cu soft landing slurry on a single platen process provides high Cu:TEOS polishing selectivity, high Cu:BD polishing selectivity and good Cu:TaN polishing selectivity.
  • PIB-type Cu soft landing CMP slurry being used on the single platen process provides almost fully stop CMP polishing performances on polishing dielectric films, TEOS and BD while using a hard IC1010 polishing pad.
  • the PIB barrier slurry also provides the fully stop CMP polishing performances on polishing Cu and BD films at different applied down force and sliding velocity combination conditions on the single platen process and with hard IC1010 polishing pad.
  • the PIB-type of barrier CMP slurry on a single platen process provides the reasonable TEOS and TaN removal rates while using a hard IC1010 polishing pad.
  • PIB Cu bulk CMP polishing composition comprised of 5.20 wt.% glycine, 2.40 wt.% alanine, 0.016 wt.% Amitrole, 0.0231 wt.% choline bicarbonate, 0.0016 wt.% NeoIone M10 biocide, 0.2705 wt.% high purity colloidal silica particles as abrasive, 0.050 wt.% Silsurf E608 as dispersing agent and 0.10 wt.% 35micron sized polyurethane beads.
  • PIB Cu soft landing CMP polishing composition comprised of EMD Electronics Cu soft landing slurry, Cu3086, with added 0.050 wt.% Silsurf E608 as dispersing agent and 0.10 wt.% 35micron sized polyurethane beads.
  • PIB Barrier CMP polishing composition comprised of EMD Electronics, BAR6610R slurry, with added 0.050 wt.% Silsurf E608 as dispersing agent and 0.25 wt.% 35micron sized polyurethane beads.
  • polishing testing were conducted using soft Fujibo pad on a single platen process with different applied down force and sliding velocities.
  • the highest Cu removal rate is achieved with Cu PIB bulk CMP slurry at 2.5psi down force and 1 .5m/s sliding velocity on the single platen process using soft Fujibo pad.
  • the Cu removal rate obtained using soft Fujibo pad is even higher than the Cu removal rate obtained using hard IC1010 pad at the same down force and sliding velocity.
  • the PIB-type of Cu bulk slurry on a single platen process provides very high Cu:TEOS polishing selectivity at >7900:1 and Cu:TaN polishing selectivity at about 1450:1 at 2.0psi down force and 1 .5m/s sliding velocity using soft Fujibo pad.
  • soft Fujibo pad provides higher Cu:TEOS and Cu:TaN selectivities than the selectivities obtained using hard IC1010 pad.
  • the highest Cu removal rate is achieved with Cu PIB bulk CMP slurry at 1 .Opsi down force and 1 .0m/s sliding velocity on the single platen process using soft Fujibo pad.
  • the PIB-type of Cu soft landing slurry on a single platen process provides very high Cu:TEOS polishing selectivity, very high Cu:BD polishing selectivity and very high Cu:TaN polishing selectivity.
  • PIB-type Cu soft landing CMP slurry being used on the single platen process provides fully stop CMP polishing performances on polishing dielectric films, TEOS and BD while using a soft Fujibo polishing pad.
  • the PIB barrier slurry also provides the desirable Cu removal rates, good TEOS, TaN and BD film removal rates.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un procédé de planarisation chimico-mécanique (CMP) à plateau unique à l'aide d'une nouvelle technologie de tampon-en-bouteille (PIB) et de pâtes de CMP de type PIB pour une application de CMP d'extrémité arrière, ledit procédé permettant de remplacer de multiples (tels que trois) procédés de CMP à plateaux pour des applications de CMP à extrémité arrière. Le plateau unique comprenant un seul tampon de polissage est utilisé pour l'ensemble du procédé de CMP à extrémité arrière comprenant un substrat métallique, un palier souple métallique et un CMP à barrière métallique.
PCT/US2022/079271 2021-11-10 2022-11-04 Planarisation chimico-mécanique à plateau unique de type tampon-en-bouteille pour applications d'extrémité arrière WO2023086753A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050016861A1 (en) * 2003-07-24 2005-01-27 Thomas Laursen Method for planarizing a work piece
US20050026425A1 (en) * 2003-07-29 2005-02-03 Trecenti Technologies, Inc. Semiconductor device manufacturing method
US20090270015A1 (en) * 2008-04-25 2009-10-29 Applied Materials, Inc. High throughput chemical mechanical polishing system
US20160114457A1 (en) * 2014-10-24 2016-04-28 Globalfoundries Singapore Pte. Ltd. Uniform polishing with fixed abrasive pad
US20180361529A1 (en) * 2017-06-19 2018-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing system and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050016861A1 (en) * 2003-07-24 2005-01-27 Thomas Laursen Method for planarizing a work piece
US20050026425A1 (en) * 2003-07-29 2005-02-03 Trecenti Technologies, Inc. Semiconductor device manufacturing method
US20090270015A1 (en) * 2008-04-25 2009-10-29 Applied Materials, Inc. High throughput chemical mechanical polishing system
US20160114457A1 (en) * 2014-10-24 2016-04-28 Globalfoundries Singapore Pte. Ltd. Uniform polishing with fixed abrasive pad
US20180361529A1 (en) * 2017-06-19 2018-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing system and method

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